Semiconductor device having integrated planar mosfets and an integrated trench schottky barrier diode

By integrating planar MOSFETs and trench SBDs in a single semiconductor device, the challenge of reducing manufacturing costs and improving performance is addressed, enabling more efficient production of MOSFETs and SBDs.

WO2026155961A1PCT designated stage Publication Date: 2026-07-23MICROCHIP TECHNOLOGY INC
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Patent Information

Authority / Receiving Office
WO · WO
Patent Type
Applications
Current Assignee / Owner
MICROCHIP TECHNOLOGY INC
Filing Date
2026-01-12
Publication Date
2026-07-23

AI Technical Summary

Technical Problem

Existing semiconductor devices face challenges in improving the performance and reducing the cost of MOSFETs, particularly in integrating multiple MOSFETs and SBDs on the same die while maintaining efficient operation.

Method used

The integration of planar MOSFETs and trench SBDs into a single semiconductor device, where the SBD is positioned between MOSFETs, allowing for reduced cell pitch and increased manufacturing efficiency.

Benefits of technology

This integration enables the manufacture of more MOSFETs and SBDs on the same die, reducing manufacturing costs and potentially enhancing device performance.

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Abstract

A semiconductor device comprising a volume of semiconductor material including a first end, a second end spaced vertically from the first end, a first side, and a second side spaced laterally from the first side; a first integrated planar MOSFET located at the first side of the volume of semiconductor material; a second integrated planar MOSFET located at the second side of the volume of semiconductor material; and a trench located at the first end of the volume of semiconductor material between the first and second integrated planar MOSFETs. An integrated trench Schottky barrier diode comprising a Schottky metal is located within the trench. Methods for making the semiconductor device are also disclosed.
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