Wafer baking chamber and semiconductor device

Abstract

A wafer baking chamber and a semiconductor device. A chamber body of the wafer baking chamber comprises a plurality of process chambers arranged in a stacked manner, and each process chamber is provided with a plurality of bases spaced apart from each other for carrying wafers. By providing the plurality of process chambers and providing the plurality of bases in each process chamber, the wafer throughput is improved. In addition, each process chamber has a plurality of gas inlets, and the gas inlets are respectively arranged on two opposite side walls in a second direction; and an exhaust port is communicated with the process chamber, and is located on one side of the plurality of gas inlets in a first direction, that is, the exhaust port is spaced apart from the plurality of gas inlets. By means of the spaced arrangement of the exhaust port and the gas inlets, gas is enabled to form a directional flow in the process chamber. Moreover, the gas inlets are respectively arranged on the side walls in the second direction, so that the gas can simultaneously enter the process chamber from the two side walls in the second direction, which is beneficial to ensuring the uniformity of gas distribution in the process chamber, thereby enabling volatiles to be discharged in a timely manner and improving the baking quality and uniformity of the wafers.

Description

Wafer baking chambers and semiconductor equipment Technical Field

[0001] The present invention relates to the field of semiconductor equipment, and more particularly to a wafer baking chamber and semiconductor equipment. Background Technology

[0002] In chip manufacturing, etching plays a crucial role. Etching is primarily used to remove the oxide layer from the wafer surface, preparing it for subsequent processing steps. Based on actual production needs, etching processes are mainly divided into two categories: dry etching and wet etching. Dry etching utilizes chemical or physical reactions in the gas phase to remove the surface of the material to be etched, while wet etching uses chemical solutions to remove the material surface.

[0003] Dry etching systems typically consist of two main components: a reaction unit and a baking unit. The reaction unit introduces a specific proportion of a special gas, which reacts with the wafer surface under specific temperature conditions. The baking unit, by setting temperature conditions, causes unwanted media on the wafer to evaporate after the reaction. Currently, most baking units on the market employ a single-chamber design, with each chamber capable of baking only one wafer. Although some advanced devices have achieved simultaneous baking of two wafers in a single chamber, failure to properly control the wafer handling time and reaction time can easily affect the wafer fabrication quality.

[0004] Moreover, the single-chamber design of existing baking equipment limits the improvement of overall production efficiency and has low space utilization. Summary of the Invention

[0005] The problem solved by the embodiments of the present invention is to provide a wafer baking chamber and semiconductor equipment for simultaneously accommodating multiple wafers for baking, so as to improve production efficiency.

[0006] To address the aforementioned problems, embodiments of the present invention provide a wafer baking chamber, comprising: a cavity including a plurality of stacked process chambers, each of which is provided with a plurality of bases for supporting wafers at intervals; the process chambers including a first direction in a plane and a second direction perpendicular to the first direction; an air inlet communicating with the process chambers and located on one side of the process chambers in the first direction; the number of air inlets being plurality, and respectively disposed on two opposite sidewalls in the second direction; and an air extraction port communicating with the process chambers and located on the same side of the plurality of air inlets in the first direction.

[0007] Optionally, the air inlet is oriented toward the base, and the air inlet is higher than the base in the vertical direction.

[0008] Optionally, in the first direction, the area aligned with the extension line of the air inlet is located between the center of the base and the side wall of the cavity.

[0009] Optionally, the air inlets are arranged in pairs on two side walls in the second direction, and the air inlets arranged opposite each other are coaxially arranged.

[0010] Optionally, the cavity includes two process chambers, namely a top process chamber and a bottom process chamber; in the first direction, the exhaust port corresponding to the bottom process chamber and the exhaust port corresponding to the top process chamber are respectively located on both sides of the sidewall of the cavity in the first direction.

[0011] Optionally, on a horizontal projection plane, the exhaust port of the bottom process chamber is located on the inner side of the cavity sidewall, and the exhaust port of the top process chamber is located on the outer side of the cavity sidewall; or, on a horizontal projection plane, the exhaust port of the bottom process chamber is located on the outer side of the cavity sidewall, and the exhaust port of the top process chamber is located on the inner side of the cavity sidewall.

[0012] Optionally, the air extraction port extends in a vertical direction, or the air extraction port extends in a first direction.

[0013] Optionally, the cavity is rectangular.

[0014] Optionally, the process chamber is provided with a wafer transfer port on the side wall in the first direction, the air inlet is located close to the wafer transfer port, and the air extraction port is located away from the wafer transfer port.

[0015] Optionally, the cavity includes two process chambers, namely a top process chamber and a bottom process chamber; the wafer baking chamber further includes: an upper gate valve, disposed at the wafer transfer port of the top process chamber, for opening or closing the wafer transfer port; and a lower gate valve, disposed at the wafer transfer port of the bottom process chamber, for opening or closing the wafer transfer port.

[0016] Optionally, the plurality of process chambers are aligned at both ends in a first direction, and the plurality of process chambers are aligned at both ends in a second direction.

[0017] Optionally, the number of air inlets is the same as the number of bases.

[0018] Optionally, the plurality of bases in the process chamber are arranged at intervals along the second direction.

[0019] Optionally, in each of the process chambers, the number of air extraction ports is the same as the number of bases, and they correspond one-to-one with the bases; or the number of air extraction ports is one, and it is located at the center of the process chamber in the second direction.

[0020] Optionally, the wafer baking chamber further includes a maintenance structure, which is detachably disposed in the process chamber below the topmost process chamber and located on the side wall of the lower process chamber in a second direction.

[0021] Optionally, the maintenance structure includes: a fixed structure; an observation window disposed on the fixed structure; and an air inlet penetrating the fixed structure and spaced apart from the observation window in the first direction, wherein the air inlet is further away from the air extraction port than the observation window.

[0022] Optionally, a stepped hole extending in the second direction is provided on the side wall of the lower process chamber; the maintenance structure includes a stepped boss structure, which corresponds to the stepped hole and is installed on the stepped hole.

[0023] Optionally, the stepped hole includes a first hole and a second hole communicating with the first hole, wherein the size of the second hole is smaller than that of the first hole; the stepped boss structure includes a main body portion and a first protrusion portion located on the main body portion, wherein the first protrusion portion is used to be disposed in the second hole, and the main body portion is used to be disposed in the first hole.

[0024] Optionally, the wafer baking chamber further includes an air inlet pipe connected to the air inlet.

[0025] Optionally, the cavity includes: a cover plate, detachably disposed on the top of the topmost process chamber; and an observation window disposed on the side wall of the topmost process chamber in a second direction.

[0026] Optionally, the wafer baking chamber further includes a partition structure for isolating adjacent process chambers in the vertical direction, and the partition structure has a heating unit.

[0027] Optionally, the process chamber is provided with two bases, and the two bases are symmetrically arranged in the process chamber.

[0028] Optionally, the bases in the same process chamber are positioned in the same vertical direction.

[0029] Optionally, the cavity includes two process chambers, namely a top process chamber and a bottom process chamber; the wafer baking chamber further includes a vacuum buffer chamber, located on the side wall of the top process chamber in a first direction and communicating with the top process chamber.

[0030] This invention also provides a semiconductor device, comprising: a wafer baking chamber, each of the process chambers having a wafer transfer port; a transfer device corresponding to the wafer transfer port, used to remove baked wafers from the process chambers or to place wafers to be baked into the wafer baking chambers; and a negative pressure generating device, wherein there are multiple negative pressure generating devices, each negative pressure generating device corresponding to and connected to the air extraction ports of the process chambers through an air extraction channel.

[0031] Compared with the prior art, the technical solution of the embodiments of the present invention has the following advantages:

[0032] In the wafer baking chamber provided by this embodiment of the invention, the chamber includes multiple stacked process chambers. Each process chamber has multiple bases for supporting wafers spaced apart. The stacking arrangement of multiple process chambers improves space utilization, and the multiple bases in each process chamber increase wafer throughput. Furthermore, the air inlets are connected to the process chambers and located on one side of the process chamber in a first direction. Multiple air inlets are respectively located on two opposite sidewalls in a second direction. The air extraction ports are connected to the process chambers and located on the same side of the multiple air inlets in the first direction. That is, the air extraction ports and multiple air inlets are spaced apart. This spaced arrangement of air inlets and extraction ports allows gas to flow directionally within the process chamber. Since the air inlets are located on the sidewalls in the second direction, gas can simultaneously enter the process chamber from both sidewalls in the second direction, which helps ensure uniform gas distribution within the process chamber, allowing volatiles to be discharged promptly and improving the baking quality and uniformity of the wafers. Attached Figure Description

[0033] Figure 1 is a schematic diagram of the structure of the wafer baking chamber according to an embodiment of the present invention;

[0034] Figure 2 is a schematic cross-sectional view of the wafer baking chamber according to an embodiment of the present invention;

[0035] Figure 3 is a schematic diagram of the top process chamber in the wafer baking chamber according to an embodiment of the present invention;

[0036] Figure 4 is a schematic diagram of the bottom process chamber in the wafer baking chamber of an embodiment of the present invention;

[0037] Figure 5 is a schematic diagram of the maintenance structure in the crystal bottom process chamber of an embodiment of the present invention from one perspective.

[0038] Figure 6 is a schematic diagram of the maintenance structure in the crystal bottom process chamber of an embodiment of the present invention from another perspective.

[0039] Figure 7 is a schematic diagram of the installation of the bottom process chamber and maintenance structure in the wafer baking chamber according to an embodiment of the present invention;

[0040] Figure 8 is a schematic diagram of the partition structure in the wafer baking chamber according to an embodiment of the present invention;

[0041] Figure 9 is a schematic diagram of the structure of the process chamber in the wafer baking chamber of the present invention in other embodiments;

[0042] Figure 10 is a schematic cross-sectional view of a semiconductor device according to an embodiment of the present invention;

[0043] Figure 11 is a schematic diagram of the semiconductor device according to an embodiment of the present invention from one perspective;

[0044] Figure 12 is a schematic diagram of the isometric structure of a semiconductor device according to an embodiment of the present invention. Detailed Implementation

[0045] As can be seen from the background technology, the single-chamber design of existing baking equipment limits the improvement of overall production efficiency and has low space utilization.

[0046] To address the aforementioned technical problems, the wafer baking chamber provided in this embodiment of the invention includes multiple stacked process chambers. Each process chamber has multiple bases spaced apart for supporting wafers. The stacked arrangement of the multiple process chambers improves space utilization, and the multiple bases in each process chamber increase wafer throughput. Furthermore, the air inlets are connected to the process chambers and located on one side of the process chamber in a first direction. Multiple air inlets are respectively located on two opposite sidewalls in a second direction. The exhaust ports are connected to the process chambers and located on the same side of the multiple air inlets in the first direction. In other words, the exhaust ports and the multiple air inlets are spaced apart. This spaced arrangement of the air inlets and exhaust ports allows for directional gas flow within the process chamber. Since the air inlets are located on the sidewalls in the second direction, gas can simultaneously enter the process chamber from both sidewalls in the second direction, which helps ensure uniform gas distribution within the process chamber, allowing volatiles to be discharged promptly and improving the baking quality and uniformity of the wafers.

[0047] To make the above-mentioned objects, features and advantages of the embodiments of the present invention more apparent and understandable, the specific embodiments of the present invention will be described in detail below with reference to the accompanying drawings.

[0048] Figure 1 is a schematic diagram of the wafer baking chamber according to an embodiment of the present invention. Figure 2 is a cross-sectional schematic diagram of the wafer baking chamber according to an embodiment of the present invention. Figure 3 is a schematic diagram of the top process chamber in the wafer baking chamber according to an embodiment of the present invention. Figure 4 is a schematic diagram of the bottom process chamber in the wafer baking chamber according to an embodiment of the present invention. Figure 5 is a schematic diagram of the maintenance structure in the bottom process chamber according to an embodiment of the present invention from one perspective. Figure 6 is a schematic diagram of the maintenance structure in the bottom process chamber according to an embodiment of the present invention from another perspective. Figure 7 is a schematic diagram of the installation of the bottom process chamber and maintenance structure in the wafer baking chamber according to an embodiment of the present invention. Figure 8 is a schematic diagram of the partition structure in the wafer baking chamber according to an embodiment of the present invention. Figure 9 is a schematic diagram of other embodiments of the process chamber in the wafer baking chamber according to an embodiment of the present invention.

[0049] Referring to Figures 1 to 4, this embodiment of the invention provides a wafer baking chamber, comprising: a chamber 100, including a plurality of stacked process chambers 101, and each process chamber 101 having a plurality of bases 102 for supporting wafers spaced apart; the process chambers 101 including a first direction X in a plane and a second direction Y perpendicular to the first direction X; an air inlet 103 communicating with the process chambers 101 and located on one side of the process chambers 101 in the first direction X; the number of air inlets 103 being plurality of, and respectively disposed on two opposite sidewalls in the second direction Y; and an air extraction port 104 communicating with the process chambers 101 and located on the same side of the plurality of air inlets 103 in the first direction X.

[0050] In the wafer baking chamber provided in this embodiment of the invention, the cavity 100 includes a plurality of stacked process chambers 101, and each process chamber 101 is provided with a plurality of bases 102 for supporting wafers at intervals. The stacked arrangement of the plurality of process chambers 101 improves the space utilization rate, and the provision of a plurality of bases 102 in each process chamber 101 improves the wafer processing capacity. Furthermore, the air inlet 103 is connected to the process chamber 101 and is located on one side of the process chamber 101 in the first direction X. There are multiple air inlets 103, which are respectively set on two opposite side walls in the second direction Y. The air outlet 104 is connected to the process chamber 101 and is located on the same side of the multiple air inlets 103 in the first direction X. That is to say, the air outlet 104 and the multiple air inlets 103 are arranged alternately. By arranging the air inlets 103 and the air outlet 104 alternately, the gas can form a directional flow in the process chamber 101. Since the air inlets 103 are symmetrically arranged on the side walls in the second direction Y, the gas can enter the process chamber 101 from both side walls in the second direction Y at the same time. This helps to ensure the uniformity of gas distribution in the process chamber 101, so that volatiles can be discharged in time, and improve the baking quality and uniformity of the wafer.

[0051] In this embodiment, the cavity 100 includes a plurality of process chambers 101 arranged in a stacked manner.

[0052] The cavity 100 includes multiple process chambers 101 arranged in a stacked manner. By utilizing the space in the vertical direction, the space utilization rate per unit area is significantly improved, allowing more wafers to be accommodated and processed simultaneously within the cavity 100. This increases the capacity of the wafer baking cavity, overcomes the technical problem of limited capacity in traditional single cavities, and enables the wafer baking cavity to meet the high capacity requirements in modern semiconductor manufacturing, thus improving overall production efficiency.

[0053] In this embodiment, the cavity 100 is a cuboid. The cuboid is a regular geometric shape, which provides a stable spatial structure for the stacking arrangement of the process chambers 101, and realizes the alignment of the process chambers 101 in the first direction X and the second direction Y, thereby laying a structural foundation for the regular arrangement of functional components such as air inlets and exhaust outlets.

[0054] In this embodiment, multiple process chambers 101 are aligned at both ends in the first direction X, and multiple process chambers 101 are aligned at both ends in the second direction Y.

[0055] The alignment of the process chambers 101 at both ends in the first direction X and the second direction Y is beneficial to ensure that each process chamber 101 has the same internal space structure, providing a consistent gas flow environment and the same heating conditions for each process chamber 101. This ensures the consistency and controllability of the wafer baking process in each process chamber 101, thus enabling multiple process chambers 101 to maintain a stable processing environment at the same time, which is beneficial to improving the consistency and yield of wafer baking.

[0056] In this embodiment, each process chamber 101 is provided with a plurality of bases 102 for supporting wafers at intervals.

[0057] Multiple bases 102 for holding wafers are arranged at intervals in the process chamber 101, which increases the wafer processing capacity of a single process chamber 101, enabling each process chamber 101 to process multiple wafers at the same time, thus significantly improving the production efficiency of the wafer baking chamber.

[0058] In this embodiment, a heating wire is provided in the base 102. The heating wire, as a heating element, provides the required ambient temperature for wafer processing, ensuring the stability and reliability of the baking process, thus improving product quality.

[0059] It should also be noted that a heat homogenizing layer (not shown in the figure) is provided on the surface of the base 102, which serves as the wafer support surface.

[0060] The heat equalization layer set on the base 102, in conjunction with the heating wire, achieves indirect heating of the wafer, avoiding direct contact between the wafer and the base 102, and realizing more uniform heat conduction to the wafer. This ensures that the wafer is heated evenly during the baking process, thereby improving the baking quality of the wafer, making the entire baking process more controllable, and contributing to the improvement of product quality.

[0061] Specifically, the heat distribution layer is a silicon wafer. The heat distribution layer uses a silicon wafer design because silicon wafers and wafers have the same material properties, which can evenly transfer the heat generated by the heating wires on the base to the wafer, thereby avoiding the problem of uneven heat distribution and making the entire baking process more controllable.

[0062] It should be noted that the heating wires in each base 102 can be independently controlled. This independent control of the heating wires in each base 102 allows for precise temperature adjustment of each base 102, ensuring a stable heat input for each wafer, guaranteeing temperature uniformity and controllability during the process, improving the reliability of the wafer baking process, and enabling multiple wafers to simultaneously achieve consistent heat treatment results, thus improving product yield and production efficiency.

[0063] In this embodiment, the bases 102 in the same process chamber 101 are positioned identically in the vertical direction. Maintaining the same position of the bases 102 in the same process chamber 101 in the vertical direction ensures that the height of each base 102 is consistent, thereby providing a uniform processing environment for the wafers. This guarantees the uniformity and stability of the process, thus improving the consistency of wafer baking quality and contributing to higher product yield. Furthermore, the consistent height of the bases 102 facilitates wafer loading and unloading operations by robotic arms, improving production efficiency.

[0064] In this embodiment, there are two process chambers 101. By arranging the process chambers 101 vertically, space utilization is improved, enabling higher production capacity within the same floor area. This ensures that if one process chamber 101 malfunctions, the other process chamber 101 can continue to operate, thus improving the reliability and production continuity of the wafer baking chamber, resulting in higher production efficiency and stronger fault tolerance.

[0065] In this embodiment, two bases 102 are provided in the process chamber 101, and the two bases 102 are symmetrically arranged in the process chamber 101.

[0066] The symmetrical arrangement of the two bases 102 in the process chamber 101 facilitates the uniform flow of gas within the process chamber 101. During wafer processing, the temperature field around each base 102 tends to be consistent, ensuring the stability and controllability of the wafer processing process. This allows multiple wafers to obtain the same processing conditions simultaneously, which is beneficial for improving the yield and production efficiency of wafer baking.

[0067] In other embodiments, the process chamber may also be provided with four bases arranged in two rows and two columns. In still other embodiments, the process chamber may be provided with six bases arranged in two rows and three columns.

[0068] In this embodiment, a plurality of bases 102 in the process chamber 101 are arranged at intervals along the second direction Y.

[0069] Multiple bases 102 in the process chamber 101 are arranged at intervals along the second direction Y. By arranging multiple bases 102 in the process chamber 101, the space of the process chamber 101 is efficiently utilized, the wafer processing capacity of a single process chamber 101 is improved, and the production capacity of the wafer baking chamber is increased.

[0070] In this embodiment, the air inlet 103 is connected to the process chamber 101. During the wafer baking process, inert gas is supplied to the process chamber 101 through the air inlet 103, so that a stable process environment can be formed in the process chamber 101. The inert gas has stable chemical properties and will not react with the wafer surface. It can protect the wafer surface quality during high-temperature baking and help remove impurities generated during the process.

[0071] It should be noted that the air inlet 103 is located on one side of the process chamber 101 in the first direction X. There are multiple air inlets 103, which are respectively located on two opposite side walls in the second direction Y.

[0072] Multiple air inlets 103 are symmetrically arranged on the two side walls of the process chamber 101 in the second direction Y, so that gas can enter from both sides of the process chamber 101 at the same time, thereby forming a directional flow path from the air inlet 103 to the exhaust port 104 in the process chamber 101, thus ensuring the flow of gas in the process chamber 101. Therefore, it can ensure the uniformity of gas distribution in the process chamber 101, so that volatiles can be discharged in time, improve the gas utilization efficiency, and help improve the baking quality of wafers.

[0073] In this embodiment, the air inlet 103 is positioned facing the base 102, and the air inlet 103 is higher than the base 102 in the vertical direction.

[0074] The air inlet 103 is positioned facing the base 102 and is higher than the base 102 in the vertical direction, so that the gas can form a uniform downward airflow under the action of gravity, thereby ensuring that the gas can effectively cover the wafer surface, thereby improving the contact efficiency between the gas and the wafer surface. Therefore, it can significantly improve the gas utilization efficiency in the process, making the wafer baking process more uniform and controllable, which is conducive to improving product quality and production efficiency.

[0075] In this embodiment, in the first direction X, the area aligned with the extension line of the air inlet 103 is located between the center of the base 102 and the side wall of the cavity 100.

[0076] The gas entering the chamber can form a directional flow path from the air inlet 103 to the air outlet 104. Under the action of the air outlet 104, even if the extended line of the air inlet 103 is aligned between the center of the base 102 and the side wall of the chamber 100, the air outlet 104 creates a negative pressure in the chamber. The gas can still sweep across the entire wafer surface along a scientifically reasonable flow trajectory, ensuring the uniformity of gas distribution in the process chamber 101 and allowing volatiles to be discharged in time. Therefore, the gas utilization efficiency can be improved, and the wafer baking quality can be significantly improved.

[0077] In this embodiment, the air inlets 103 are arranged in pairs on the two side walls in the second direction Y, and the air inlets 103 arranged opposite each other are coaxially arranged.

[0078] The air inlets 103 are paired and coaxially arranged on the two side walls of the process chamber 101 in the second direction Y. This allows the gas to enter the process chamber 101 from both sides, and the two outflowing gases can converge, collide, and disperse throughout the entire process chamber 101. This creates a uniform and controllable airflow distribution within the process chamber 101, ensuring the fluidity and uniformity of gas distribution. This facilitates the timely removal of volatiles and improves gas utilization efficiency, resulting in a more uniform and controllable wafer baking process and ultimately improving wafer baking quality. Simultaneously, the pairing of the air inlets 103 on the two side walls in the second direction Y, in conjunction with the exhaust port 104, forms a directional flow path from the air inlets 103 to the exhaust port 104, further optimizing the gas flow within the process chamber 101.

[0079] It should also be noted that the number of air inlets 103 is the same as the number of bases 102. Having the same number of air inlets 103 as bases 102 ensures that each base 102 receives an independent and uniform gas supply, thereby guaranteeing the consistency of gas distribution around the wafer during baking and improving gas utilization efficiency. This effectively enhances the baking quality of the wafer.

[0080] In this embodiment, the wafer baking chamber further includes an air inlet pipe (not shown in the figure), which is connected to the air inlet 103. The air inlet pipe and the air inlet 103 are connected to form a gas delivery channel, thereby ensuring that the process gas can be stably and reliably delivered to the interior of the process chamber 101.

[0081] In this embodiment, the selection of the inlet pipe material needs to simultaneously meet requirements such as corrosion resistance, good airtightness, and high temperature resistance. This is because a special gas needs to be introduced during the baking process and operate under specific temperature conditions. It is also necessary to ensure that the gas can form a stable directional flow path within the process chamber 101. The selection of the inlet pipe material directly affects the reliability of the wafer baking chamber and the process effect. As an example, 316L stainless steel is used as the main structural material.

[0082] As an example, the connection between the intake pipe and the intake port 103 adopts a through-type structural design, specifically including a double sealing ring structure. The inner ring uses fluororubber as the primary seal, and the outer ring uses perfluoroether rubber as a backup seal. The connection between the intake pipe and the intake port 103 uses a standard flange-type sealing connection structure, achieving precise positioning through locating pins and fixing with evenly spaced bolts to ensure uniform distribution of sealing pressure. In other embodiments, the intake pipe and intake port can also adopt other connection methods.

[0083] The cavity 100 includes: a cover plate 105, which is detachably disposed on the top of the topmost process chamber 101; and an observation window 106 disposed on the side wall of the topmost process chamber 101 in the second direction Y.

[0084] The observation window 106 is used to monitor the internal status of the top process chamber 101a in real time without affecting the airtightness of the top process chamber 101a. When an abnormality is observed and maintenance is required, the removable cover 105 provides a quick maintenance channel, which improves the maintainability of the equipment and the controllability of the process, making the entire baking process more reliable and efficient, and is conducive to improving product quality and production efficiency.

[0085] As shown in Figure 8, the wafer baking chamber further includes a partition structure 107 for isolating adjacent process chambers 101 in the vertical direction, and the partition structure 107 has a heating unit.

[0086] Adjacent process chambers 101 are isolated by a partition structure 107, making the process environment inside each process chamber 101 completely independent, thereby ensuring that each process chamber 101 can operate independently without interference. Therefore, while isolating the top process chamber 101a and the bottom process chamber 101b, the partition structure 107 also provides heat to the top process chamber 101a and the bottom process chamber 101b, so that the top process chamber 101a and the bottom process chamber 101b have a relatively uniform temperature environment, which is beneficial to improving the wafer baking quality.

[0087] It should be noted that the partition structure 107 has multiple base mounting holes 109 for fixing the base 102.

[0088] As shown in Figures 5 and 6, the wafer baking chamber further includes a maintenance structure 108, which is detachably disposed in the process chamber 101 below the top process chamber 101 and located on the side wall of the lower process chamber in the second direction Y.

[0089] The maintenance structure 108 facilitates maintenance of the lower process chamber 101 among adjacent process chambers 101, enabling maintenance operations to be performed without affecting the operation of the top process chamber. This improves the maintainability of the wafer baking chamber and reduces the impact on the top process chamber 101 when maintaining the lower one, significantly enhancing the maintenance efficiency of the wafer baking chamber and ensuring its continuous and stable operation. The maintenance structure 108 is also provided on the two side walls in the second direction Y, giving the process chamber 101 dual-sided maintenance capabilities, providing more flexible maintenance operation space, improving maintenance efficiency and convenience, and allowing the wafer baking chamber to be better maintained.

[0090] In this embodiment, the maintenance structure 108 is detachably installed on the two side walls in the second direction Y.

[0091] The maintenance structure 108 is detachably installed on the two side walls in the second direction Y, which improves the convenience and comprehensiveness of maintenance of the maintenance structure 108, reduces the difficulty of maintenance, and significantly improves the efficiency of maintenance, which is beneficial to the daily maintenance and troubleshooting of the wafer baking chamber.

[0092] In this embodiment, the maintenance structure 108 includes: a fixed structure 113; an observation window 106 disposed on the fixed structure 113; and an air inlet 103 penetrating the fixed structure 113 and disposed at a distance from the observation window 106 in the first direction X. The air inlet 103 is further away from the exhaust port 104 than the observation window 106.

[0093] The fixing structure 113 provides a structural basis for fixing the maintenance structure 108 to the second side wall of the lower process chamber. The observation window 106 is used to observe the internal condition of the bottom process chamber 101b in real time during the wafer baking process, which helps to detect abnormal conditions in the baking process in a timely manner, thereby ensuring the stability of the baking process. Therefore, it improves the reliability of the wafer baking chamber operation and helps to improve the quality of wafer baking.

[0094] As an example, the observation window 106 adopts a multi-layer structure design, consisting of a high-temperature resistant quartz glass window, double-layer sealing rings, and a stainless steel fixing frame, from the inside out. The quartz glass window employs a special anti-reflective treatment process, reducing light reflection loss by coating multiple layers of dielectric thin films on its surface, thereby improving observation clarity. The double-layer sealing rings use a labyrinth design; the inner sealing ring primarily performs the airtight sealing function, while the outer sealing ring provides dust protection and secondary protection, significantly improving the overall sealing reliability. The stainless steel fixing frame uses a split design, with evenly distributed bolt preload, ensuring that the entire observation window 106 maintains stable sealing performance in high-temperature environments, facilitating long-term reliable operation.

[0095] The air inlet 103 is farther away from the exhaust port 104 than the observation window 106. In other words, the air inlet 103 and the exhaust port 104 are located on opposite sides of the observation window 106 in the first direction X. This allows the airflow to have a longer gas flow path in the process chamber 101, which is beneficial to improve the uniformity of gas distribution, allow volatiles to be discharged in time, ensure the quality of the gas environment during the wafer baking process, make the process more controllable, and help improve product yield.

[0096] As shown in Figure 7, a stepped hole 113 extending in the second direction is provided on the side wall of the lower process chamber 101b. The maintenance structure 108 includes a stepped boss structure 114, which corresponds to the stepped hole 113 and is installed on the stepped hole 113.

[0097] Specifically, the stepped hole 113 includes a first hole 113a and a second hole 113b communicating with the first hole 113a, wherein the size of the second hole 113b is smaller than that of the first hole 113a. The stepped boss structure 114 includes a main body portion 114a and a first protrusion portion 114b located on the main body portion 114a. When the stepped boss structure 114 is installed on the stepped hole 113, the first protrusion portion 114b is disposed in the second hole 113b, and the main body portion 114a is disposed in the first hole 113a.

[0098] It should also be noted that the area in the maintenance structure 108 used for mounting the observation window 106 is thicker. As an example, the stepped boss structure 114 also includes a second protrusion 114c, located on the side of the main body 114a opposite to the first protrusion 114b.

[0099] The increased thickness of the area in the maintenance structure 108 used for installing the observation window 106 facilitates the installation and fixation of the observation window 106. Furthermore, the increased thickness of the area in the maintenance structure 108 used for installing the observation window 106 helps reduce heat loss at the observation window 106 in the bottom process chamber 101b, and also provides process space for the sealing ring that matches the observation window 106.

[0100] The exhaust port 104 is connected to the process chamber 101 and is located on the same side of the plurality of air inlets 103 in the first direction X.

[0101] The exhaust port 104 is located on the same side of multiple air inlets 103, meaning that the exhaust port 104 and the air inlets 103 are arranged at intervals in the first direction X. This forms a directional gas flow path in the first direction X, enabling the gas in the process chamber 101 to flow effectively, thereby improving the gas utilization efficiency, which is beneficial to the uniformity of gas distribution in the process chamber 101, allowing volatiles to be discharged in a timely manner, and enabling the wafer to be baked in a stable and uniform gas environment, which is beneficial to improving the baking quality of the wafer.

[0102] In this embodiment, each process chamber 101 has one exhaust port 104, which is located at the center of the process chamber 101 in the second direction Y.

[0103] A single exhaust port 104 is located at the center of the process chamber 101 in the second direction Y, thus forming a directional and symmetrical airflow path with multiple air inlets 103. This makes the gas flow within the chamber more uniform and controllable, ensuring the stability of the gas environment during the process and thus improving the wafer baking quality. Furthermore, from the perspective of temperature uniformity, the location of the single exhaust port 104 at the center of the process chamber 101 in the second direction Y causes gas to converge from both sides towards the center of the second direction Y, forming a symmetrical airflow field. This airflow organization promotes the uniform diffusion of heat within the process chamber 101 and also ensures that the introduced inert gas is fully mixed within the chamber, effectively maintaining the temperature uniformity inside the process chamber 101.

[0104] In other embodiments, as shown in FIG9, the number of exhaust ports 104a in each process chamber 101 is the same as the number of bases 102a, and they correspond one-to-one with each other. During the wafer baking process, the volatile substances on each wafer can be discharged from the process chamber 101 in a timely manner through their respective exhaust ports 104a, avoiding the volatile substances of one wafer from settling onto another wafer, which is beneficial to improving the wafer baking quality.

[0105] In this embodiment, the wafer baking chamber further includes: a vacuum buffer chamber 110, located on the side wall of the top process chamber 101a in the first direction X, and communicating with the top process chamber 101a; and a vacuum port 104 is disposed at the bottom of the vacuum buffer chamber 110.

[0106] The vacuum buffer chamber 110 is connected to the top process chamber 101a, and the vacuum port 104 is located at the bottom of the vacuum buffer chamber 110. This allows the gas used in the process chamber 101 to first enter the vacuum buffer chamber 110 from the process chamber 101, and then exit in an orderly manner through the vacuum port 104 at the bottom of the vacuum buffer chamber 110. This, together with the air inlet 103, forms a directional flow path within the process chamber 101, thereby improving the uniformity of gas distribution and ensuring timely removal of volatiles. Furthermore, since the vacuum port 104 is not directly located within the process chamber 101, the gas is buffered and cooled as it passes through the vacuum buffer chamber 110, effectively preventing direct heat loss from the process chamber 101 and ensuring the stability of the internal temperature environment. This is crucial for wafer baking processes that require specific temperature conditions, thereby improving the quality of wafer baking.

[0107] In this embodiment, there are two process chambers 101, namely a top process chamber 101a and a bottom process chamber 101b. In the first direction X, the exhaust port 104 corresponding to the bottom process chamber 101b and the exhaust port 104 corresponding to the top process chamber 101a are respectively located on both sides of the sidewall of the cavity 100 in the first direction X.

[0108] The exhaust port 104 corresponding to the bottom process chamber 101b and the exhaust port 104 corresponding to the top process chamber 101a are located on opposite sides of the sidewall of the cavity 100 in the first direction X. This means the exhaust ports 104 of the bottom process chamber 101b and the top process chamber 101a are staggered, allowing them to form independent airflow channels. This ensures the integrity and independence of their respective airflow paths, effectively avoiding airflow interference between the bottom and top process chambers 101b and 101a. This results in more uniform and controllable gas flow within each chamber, facilitating independent maintenance of the bottom and top process chambers 101b and improving the maintainability of the wafer baking chamber. Therefore, even if one chamber requires maintenance, the other process chamber 101 can continue operating, increasing the efficiency of the wafer baking chamber. Simultaneously, this layout, through its rational arrangement with the wafer transfer port, helps maintain the stability of airflow during the process.

[0109] Specifically, on the horizontal projection plane, the exhaust port 104 of the bottom process chamber 101b is located on the inner side of the side wall of the cavity 100, and the exhaust port 104 of the top process chamber 101 is located on the outer side of the side wall of the cavity 100. It should be noted that the side wall of the cavity 100 here refers to the side wall of the cavity 100 that is opposite to the wafer transfer port in the first direction X (as shown by 1001 in Figure 1).

[0110] The exhaust ports 104 of the bottom process chamber 101b and the top process chamber 101a are connected to different exhaust channels, making the exhaust channels of the top process chamber 101a and the bottom process chamber 101b independent and unaffected by each other. On the horizontal projection plane, by placing the exhaust port 104 of the bottom process chamber 101b inside the side wall of the cavity 100 and the exhaust port 104 of the top process chamber 101a outside the side wall of the cavity 100, and positioning the exhaust ports 104 of the two process chambers 101 on opposite sides of the first direction X, structural interference between the corresponding exhaust channels of the bottom process chamber 101b and the top process chamber 101a is avoided. This allows the two process chambers 101 to form independent and stable gas flow paths, ensuring the uniformity and flowability of gas distribution within each process chamber 101. This improves exhaust efficiency, makes the process more stable and controllable, and is beneficial for improving the wafer baking quality. In addition, the exhaust port 104 of the bottom process chamber 101b is located on the inner side of the chamber sidewall, so that the exhaust channel of the bottom process chamber 101b can be tightly integrated with the support structure for installing the wafer baking chamber, reducing the space occupied.

[0111] In other embodiments, on a horizontal projection plane, the exhaust port of the bottom process chamber is located on the outer side of the chamber sidewall, and the exhaust port of the top process chamber is located on the inner side of the chamber sidewall.

[0112] In this embodiment, the exhaust port 104 extends vertically. During the operation of the wafer baking chamber, the exhaust port 104 is connected to an external negative pressure generating device, causing gas to be extracted from the exhaust port 104.

[0113] In the wafer baking chamber, the exhaust port 104 is connected to an external negative pressure generator, allowing gas to be extracted from the exhaust port 104. The exhaust port 104 extends vertically, enabling the process chamber 101 to form a vertical exhaust channel 111, which, together with the symmetrically arranged air inlets 103 on both sides, forms a stable directional gas flow path. This ensures that the gas environment in each process chamber 101 remains consistent, effectively improving gas flow and distribution uniformity, allowing volatiles to be discharged in a timely manner. This enables the wafer baking chamber to provide a stable and controllable process environment for multiple wafers simultaneously. Specifically, the vertically extending exhaust port 104 allows the gas in the process chamber 101 to connect to the external negative pressure generator through the vertically arranged exhaust channel 111. The negative pressure generator can be located at the bottom of the wafer baking chamber, making maintenance and operation more convenient.

[0114] In other embodiments, the exhaust port extends along a first direction. The exhaust port extending along the first direction means that its extension direction is approximately consistent with the main flow direction of gas within the chamber, thus forming a directional flow path from the inlet to the exhaust port. This ensures effective gas flow within the process chamber, helps guarantee the uniformity and stability of gas distribution inside the process chamber, makes the wafer processing environment more controllable, and improves the wafer baking quality.

[0115] In this embodiment, the process chamber 101 is provided with a wafer transfer port (not shown) on the side wall in the first direction X, the air inlet 103 is located close to the wafer transfer port, and the air outlet 104 is located away from the wafer transfer port.

[0116] The wafer transfer port needs a sufficiently large opening to facilitate the insertion and removal of wafers. This may cause external air to enter the process chamber 101 through the opening, affecting the process environment. Therefore, by placing the air inlet 103 near the wafer transfer port and the air outlet 104 away from the wafer transfer port, and by placing the air outlet 104 on a different side of the process chamber 101 than the wafer transfer port, a directional gas flow path from the air inlet 103 to the air outlet 104 is formed within the process chamber 101. This prevents external air contamination and ensures the flow of gas within the process chamber 101. As a result, not only is the gas utilization efficiency improved, but the stability of the internal environment of the process chamber 101 is also ensured, ultimately leading to a significant improvement in the wafer baking quality.

[0117] In this embodiment, the cavity 100 includes two process chambers 101, namely a top process chamber 101a and a bottom process chamber 101b. The wafer baking chamber includes: an upper gate valve 114, disposed at the wafer transfer port of the top process chamber 101a, for opening or closing the wafer transfer port; and a lower gate valve 115, disposed at the wafer transfer port of the bottom process chamber 101b, for opening or closing the wafer transfer port.

[0118] The top process chamber 101a and the bottom process chamber 101b are respectively equipped with the upper gate valve 114 and the lower gate valve 115. The independent gate valve design enables the top process chamber 101a and the bottom process chamber 101b to achieve a time-differential alternating wafer transfer working mode. Therefore, it can ensure the continuity and stability of the production process, which greatly improves the production efficiency of semiconductor equipment, helps to reduce production costs and improve equipment utilization.

[0119] Figure 10 is a cross-sectional view of the semiconductor device according to an embodiment of the present invention, Figure 11 is a structural view of the semiconductor device according to an embodiment of the present invention from one perspective, and Figure 12 is an isometric view of the semiconductor device according to an embodiment of the present invention.

[0120] Referring to Figures 10 to 12, the present invention also provides a semiconductor device. The semiconductor device includes: a wafer baking chamber, each process chamber 101 having a wafer transfer port; a transfer device (not shown in the figures), corresponding to the wafer transfer port, used to remove baked wafers from the process chamber 101 or to place wafers to be baked into the wafer baking chamber; and a negative pressure generating device 112, wherein there are multiple negative pressure generating devices 112, and the negative pressure generating devices 112 correspond one-to-one with and are connected to the air extraction ports 104 of the process chamber 101 through air extraction channels 111.

[0121] In the semiconductor equipment provided in this embodiment of the invention, the wafer baking chamber adopts a structure of multiple stacked process chambers 101, and each process chamber 101 is provided with multiple bases 102 for supporting wafers at intervals, thereby significantly improving the wafer processing capacity by making full use of vertical space. Each process chamber 101 is provided with a wafer transfer port, and a transfer device is used to achieve precise correspondence with the wafer transfer port, so that the baked wafers can be automatically removed from the process chamber 101, or the wafers to be baked can be placed into the process chamber 101, thus greatly improving production efficiency. Regarding gas flow, the air inlets 103 of the process chamber 101 are located on one side in the first direction X, and are respectively set on two opposite side walls in the second direction Y. The exhaust ports 104, when connected to the process chamber 101, are located on one side of the multiple air inlets 103, allowing the gas to form a directional flow path from the air inlets 103 to the exhaust ports 104 within the process chamber 101. Simultaneously, since each process chamber 101 is equipped with an independent negative pressure generator 112 connected to the exhaust port 104, it facilitates independent and precise control of the gas environment within each process chamber 101. This structural design not only ensures the uniformity of gas distribution within the process chambers 101, allowing volatiles to be discharged in a timely manner and improving the baking quality and uniformity of the wafers, but also significantly improves the overall space utilization of the equipment through the vertical stacking layout of multiple process chambers 101.

[0122] In this embodiment, the conveying device is a three-axis robot. Through precise motion control in the first direction X, the second direction Y, and the vertical direction, the three-axis robot achieves automated wafer conveying and precise positioning. This improves the reliability and stability of wafer conveying between the top process chamber 101a and the bottom process chamber 101b. Furthermore, by implementing a conveying strategy with a time difference, it enhances the working efficiency of semiconductor equipment, thereby increasing overall production capacity and yield.

[0123] In this embodiment, the negative pressure generating device 112 is a molecular pump. The molecular pump can quickly evacuate the process chamber 101 to a high vacuum state, which can prevent impurities or moisture from adsorbing onto the wafer surface, thereby improving the purity and quality of the wafer.

[0124] In this embodiment, the semiconductor device further includes a heating unit (not shown), which is disposed in the wafer baking chamber and is used to bring the temperature in each process chamber 101 to the temperature environment required for wafer baking.

[0125] It should be noted that the top process chamber 101a and the bottom process chamber 101b are each equipped with an independent negative pressure generating device. When the valves of each process chamber 101 are closed, they ensure that the interior of each process chamber 101 is a sealed space, allowing the negative pressure generating device 112 to effectively work and create a vacuum environment within the process chamber 101. Simultaneously, the top process chamber 101a and the bottom process chamber 101b utilize a three-axis robotic arm to transfer wafers. The wafer handling actions of the two process chambers 101 are coordinated through a time difference, ensuring the orderly progress of the process. Furthermore, each process chamber 101 has an independent air inlet 103 and an exhaust outlet 104, which, in conjunction with their respective independent valves, ensures the uniformity and consistency of the gas environment.

[0126] In this embodiment of the invention, the specific workflow of the wafer baking chamber, which has two process chambers 101, is as follows: First, the upper valve 114 of the top process chamber 101a and the lower valve 115 of the bottom process chamber 101b are simultaneously closed, forming sealed spaces inside both the top and bottom process chambers 101a and 101b. Then, the evacuation port 104 is connected to an external molecular pump through the evacuation channel 111, causing the molecular pump to create a vacuum environment inside the process chamber 101. Subsequently, inert gas is introduced into the top and bottom process chambers 101a and 101b through the inlet, ensuring that the gas environment in the top and bottom process chambers 101a and 101b remains consistent. Simultaneously, the heating unit of the entire chamber 100 heats the interior of the chamber 100 to the required temperature. During the wafer baking process, the inert gas is chemically stable and does not react with the wafer surface, thus protecting the wafer surface quality during high-temperature baking and assisting in the removal of impurities generated during the process.

[0127] In this embodiment, the exhaust port 104 of the bottom process chamber 101b and the exhaust port 104 of the top process chamber 101a are connected to different exhaust channels 111, so that the exhaust channels 111 of the top process chamber 101a and the bottom process chamber 101b are independent of each other and do not affect each other. On the horizontal projection plane, by setting the exhaust port 104 of the bottom process chamber 101b on the inner side of the side wall of the cavity 100 and the exhaust port 104 of the top process chamber 101a on the outer side of the side wall of the cavity 100, and positioning the exhaust ports 104 of the two process chambers 101 on opposite sides of the first direction X, structural interference between the corresponding exhaust channels 111 of the bottom process chamber 101b and the top process chamber 101a is avoided. This allows the two process chambers 101 to form independent and stable gas flow paths, ensuring the uniformity and flowability of gas distribution within each process chamber 101. This improves exhaust efficiency, allows volatiles to be discharged promptly, and makes the wafer baking process more stable and controllable, thus improving the wafer baking quality. Furthermore, the exhaust port 104 of the bottom process chamber 101b is located on the inner side of the chamber side wall, allowing the exhaust channel 111 of the bottom process chamber 101b to be tightly integrated with the support structure for mounting the wafer baking chamber, reducing space occupation.

[0128] Once the internal environment of the wafer baking chamber reaches a stable state, the upper gate valve 114 or the lower gate valve 115 is opened one process chamber 101 at a time, regardless of the order of opening, thereby enabling wafer transfer via a three-axis robotic arm. Under normal operating conditions, the top process chamber 101a and the bottom process chamber 101b can accommodate four wafers for simultaneous baking, and the robotic arm places two wafers onto the base 102 of one of the process chambers 101. It should be noted that the base 102 is equipped with heating wires; the wafers do not directly contact the base 102. A silicon wafer is placed above the base 102 as a heat homogenizing layer to indirectly heat the wafers, ensuring uniform heating during the baking process.

[0129] Once the wafer in one of the process chambers 101 has completed baking, the valve of that chamber is first opened, and a robotic arm removes and transfers the wafer. The valve is then closed until the next wafer is placed in. For wafers baked in another process chamber 101, the robotic arm performs the same wafer removal procedure. This design allows the top process chamber 101a and the bottom process chamber 101b to operate completely independently without interference. If one process chamber 101 is not working, the other process chamber 101 can continue to operate.

[0130] During operation in the wafer baking chamber, the internal condition of the process chamber 101 can be monitored in real time through observation windows 106 located on the two side walls in the second direction Y. When an abnormality occurs in the top process chamber 101a, the gas inside the top process chamber 101a needs to be extracted through the vent 104 to break the vacuum environment, thereby opening the cover plate 105 to perform maintenance work inside the top process chamber 101a. When an abnormality occurs in the bottom process chamber 101b, the gas inside the bottom process chamber 101b also needs to be extracted through the vent 104 to break the vacuum environment, and then the maintenance structure 108 needs to be removed before performing maintenance work inside the bottom process chamber 101b. It should be noted that the design of the maintenance structure 108 allows for maintenance of the bottom process chamber 101b without affecting the top process chamber 101a, reducing the difficulty of maintenance.

[0131] While the present invention has been disclosed above, it is not limited thereto. Any person skilled in the art can make various modifications and alterations without departing from the spirit and scope of the invention; therefore, the scope of protection of the present invention should be determined by the scope defined in the claims.

Claims

1. A wafer bake chamber, comprising: include: The cavity includes multiple process chambers stacked together, and each process chamber is provided with multiple bases for supporting wafers at intervals. The process chambers include a first direction in a plane and a second direction perpendicular to the first direction. An air inlet is connected to the process chamber and is located on one side of the process chamber in the first direction. There are multiple air inlets, which are respectively arranged on two opposite side walls in the second direction. The exhaust port is connected to the process chamber and is located on the same side of the plurality of air inlets in the first direction.

2. The wafer bake chamber of claim 1, wherein, The air inlet is oriented toward the base, and the air inlet is higher than the base in the vertical direction.

3. The wafer bake chamber of claim 1, wherein, In the first direction, the area aligned with the extension line of the air inlet is located between the center of the base and the side wall of the cavity.

4. The wafer bake chamber of claim 1, wherein, The air inlets are arranged in pairs on two side walls in the second direction, and the air inlets arranged opposite each other are coaxially arranged.

5. The wafer bake chamber of claim 1, wherein, The cavity includes two process chambers, namely a top process chamber and a bottom process chamber; In the first direction, the air extraction port corresponding to the bottom process chamber and the air extraction port corresponding to the top process chamber are respectively located on both sides of the sidewall of the chamber in the first direction.

6. The wafer bake chamber of claim 5, wherein, On a horizontal projection plane, the exhaust port of the bottom process chamber is located on the inner side of the chamber sidewall, and the exhaust port of the top process chamber is located on the outer side of the chamber sidewall. Alternatively, on a horizontal projection plane, the exhaust port of the bottom process chamber is located on the outer side of the chamber sidewall, and the exhaust port of the top process chamber is located on the inner side of the chamber sidewall.

7. The wafer bake chamber of claim 1, wherein, The air extraction port extends in a vertical direction, or the air extraction port extends in a first direction.

8. The wafer bake chamber of claim 1, wherein, The cavity is rectangular.

9. The wafer bake chamber of claim 1, wherein, The process chamber has a wafer transfer port on its side wall in the first direction, the air inlet is located close to the wafer transfer port, and the air extraction port is located away from the wafer transfer port.

10. The wafer bake chamber of claim 9, wherein, The cavity includes two process chambers, namely a top process chamber and a bottom process chamber; The wafer baking chamber further includes: an upper door valve, which is disposed in the wafer transfer port of the top process chamber, for opening or closing the wafer transfer port; A lower gate valve is installed at the wafer transfer port in the bottom process chamber to open or close the wafer transfer port.

11. The wafer bake chamber of claim 1, wherein, The plurality of process chambers are aligned at both ends in a first direction, and the plurality of process chambers are aligned at both ends in a second direction.

12. The wafer bake chamber of claim 1, wherein, The number of air inlets is the same as the number of bases.

13. The wafer bake chamber of claim 1, wherein, The plurality of bases in the process chamber are arranged at intervals along the second direction.

14. The wafer baking chamber as described in claim 13, characterized in that, In each of the process chambers, the number of air extraction ports is the same as the number of bases, and each port corresponds to one base. Alternatively, the number of air extraction ports may be one, and it may be located at the center of the process chamber in the second direction.

15. The wafer bake chamber of claim 1, wherein, The wafer baking chamber further includes a maintenance structure, which is detachably disposed in the process chamber below the topmost process chamber and located on the side wall of the lower process chamber in a second direction.

16. The wafer bake chamber of claim 15, wherein, The maintenance structure includes: Fixed structure; An observation window is provided on the fixed structure; The air inlet penetrates the fixed structure and is spaced apart from the observation window in the first direction. The air inlet is farther away from the air extraction port than the observation window.

17. The wafer bake chamber of claim 15, wherein, A stepped hole extending in the second direction is provided on the side wall of the process chamber located below in the second direction; The maintenance structure includes a stepped boss structure, which corresponds to the stepped hole and is installed on the stepped hole.

18. The wafer baking chamber as described in claim 17, characterized in that, The stepped hole includes: a first hole and a second hole communicating with the first hole, wherein the size of the second hole is smaller than that of the first hole; The stepped boss structure includes a main body portion and a first protrusion portion located on the main body portion, the first protrusion portion being disposed in the second hole, and the main body portion being disposed in the first hole.

19. The wafer baking chamber as described in claim 1, characterized in that, The wafer baking chamber also includes an air inlet pipe connected to the air inlet.

20. The wafer baking chamber as described in claim 1, characterized in that, The cavity includes: A cover plate is detachably mounted on the top of the topmost process chamber; An observation window is located on the side wall of the topmost process chamber in the second direction.

21. The wafer baking chamber as described in claim 1, characterized in that, The wafer baking chamber also includes: A partition structure is used to isolate adjacent process chambers in the vertical direction, and the partition structure has a heating unit.

22. The wafer baking chamber as described in claim 1, characterized in that, The process chamber is provided with two bases, and the two bases are symmetrically arranged in the process chamber.

23. The wafer baking chamber as described in claim 1, characterized in that, In the vertical direction, the positions of the bases in the same process chamber are the same.

24. The wafer baking chamber as described in claim 1, characterized in that, The cavity includes two process chambers, namely a top process chamber and a bottom process chamber; The wafer baking chamber further includes: a vacuum buffer chamber, located on the side wall of the top process chamber in a first direction, and communicating with the top process chamber; The air extraction port is located at the bottom of the air extraction buffer chamber.

25. A semiconductor device, characterized in that, include: The wafer baking chamber as described in any one of claims 1 to 24, each of the process chambers having a wafer transfer port; A conveying device, corresponding to the wafer conveying port, is used to remove the baked wafer from the process chamber or to place the wafer to be baked into the wafer baking chamber. A negative pressure generating device, wherein there are multiple negative pressure generating devices, and each negative pressure generating device corresponds to and is connected to the air extraction port of the process chamber through an air extraction channel.

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