Display panel, integrated drive circuit, display module, electronic device and display drive method

Abstract

A display panel, an integrated drive circuit, a display module, an electronic device and a display drive method, which relate to the technical field of display, and are used for improving the detection accuracy of a light sensor. By means of arranging a shielding layer between a photosensitive transistor (TS1) of a light sensor (221) and a cathode (2243), the influence of a cathode signal on the detection accuracy is reduced; by means of causing the cathode (2243) to not cover the light sensor (221), the influence of the cathode signal on the detection accuracy is reduced; by means of arranging a shielding layer on each of an upper side and a lower side of a trace (l2) of the light sensor (221), the influence of a display signal on the detection accuracy is reduced; by means of resetting the photosensitive transistor (TS1), the influence of long-term voltage bias and light bias on the detection accuracy is ameliorated; and a potential control transistor (T4) is arranged between two photosensitive transistors (TS1, TS2) that are connected in series, for low brightness, the two photosensitive transistors are used to measure the light intensity, and for high brightness, one photosensitive transistor is used to measure the light intensity, such that the same light sensor can be compatible with the detection accuracy at the high brightness and the detection accuracy at the low brightness.

Description

Display panels, driver integrated circuits, display modules, electronic devices, and display driving methods

[0001] This application claims priority to Chinese Patent Application No. 202510123472.4, filed with the State Intellectual Property Office of China on January 24, 2025, entitled "Display Panel, Driving Integrated Circuit, Display Module, Electronic Device and Display Driving Method", the entire contents of which are incorporated herein by reference. Technical Field

[0002] This application relates to the field of display technology, and in particular to a display panel, a driver integrated circuit, a display module, an electronic device, and a display driving method. Background Technology

[0003] A light sensor utilizes the photoelectric conversion function of optoelectronic devices to convert light signals on a photosensitive surface into corresponding electrical signals. Electronic devices that need to adjust the brightness of their display panels according to the intensity of ambient light integrate light sensors to achieve better display results. For example, in a watch, a light sensor detects the current ambient lighting conditions and adjusts the brightness of the display panel accordingly, ensuring the screen is clearly visible and comfortable to the eye.

[0004] Currently, in electronic devices, light sensors are typically placed below the display panel to obtain information about the intensity of light directly hitting the display panel and adjust the panel's brightness. However, when the light sensor is placed below the display panel, the transmittance of the display panel has a significant impact on the actual light intensity received by the light sensor, thus affecting the sensor's detection accuracy. Summary of the Invention

[0005] This application provides a display panel, a driver integrated circuit, a display module, an electronic device, and a display driving method for improving the detection accuracy of a light sensor.

[0006] A first aspect of this application provides a display panel with a light intensity detection function. The display panel includes a substrate and a light sensor disposed on the substrate. The light sensor includes at least one photosensitive pixel; the photosensitive pixel includes a first photosensitive transistor, the first photosensitive transistor including a bottom gate, a first gate insulating layer, a first active layer, a second gate insulating layer, a top gate, a first electrode, and a second electrode disposed on the substrate, the first electrode and the second electrode respectively passing through the second gate insulating layer and coupled to the first active layer; the top gate is made of a light-transmitting conductive material.

[0007] The display panel provided in this application integrates a light sensor inside the display panel, which can reduce the impact of the display panel's light transmittance on the light sensor's detection accuracy. Based on this, the light sensor is a dual-gate transistor. The top gate is made of a light-transmitting and conductive material. The conductivity of the top gate can serve as the gate of the first photosensitive transistor, and the light transmittance of the top gate ensures the photoelectric conversion characteristics of the first photosensitive transistor, enabling the light sensor to have light intensity collection capabilities. Simultaneously, the top gate, as the top shielding layer of the first photosensitive transistor, can shield the light sensor from interference caused by signals from the side of the top gate away from the first active layer. For example, the top gate can shield the light sensor from interference caused by signals from the transparent cathode layer or external signals. The bottom gate, as the bottom shielding layer of the first photosensitive transistor, can shield the light sensor from interference caused by signals from the side of the bottom gate away from the first active layer. This improves the problem of inaccurate or undetectable detection caused by interference from conductive signals such as those from the transparent cathode layer. Therefore, the display panel provided in this application can reduce the impact of factors such as display panel transmittance and interference from the internal conductive layer on the light sensor's detection accuracy, thereby improving the light sensor's detection accuracy.

[0008] In one possible implementation, the display panel includes a display area and a non-display area, with the non-display area located around the display area. The non-display area includes a first region adjacent to the display area, where a light sensor is disposed. This first region, for example, is located inside an ink-filled area, and after the cover plate and display panel are sealed, the first region is not covered by the ink on the cover plate. By placing the light sensor in the non-display area, the integrity of the display area is not affected, ensuring the display effect.

[0009] In one possible implementation, the display panel further includes a transparent cathode layer; the projection of the transparent cathode layer onto the substrate does not overlap with the projection of the photosensor onto the substrate, or in other words, the photosensor is not covered by a transparent cathode layer. By reducing the coverage area of ​​the transparent cathode layer, thus eliminating the need for a transparent cathode layer above the photosensor, the impact of the display signal on the transparent cathode layer on the detection accuracy of the photosensor can be further reduced, thereby improving the detection accuracy of the photosensor.

[0010] In one possible implementation, the display panel further includes at least one isolation barrier disposed in the non-display area; the light sensor is disposed on the side of the at least one isolation barrier closer to the display area. By disposing the light sensor on the side of the at least one isolation barrier closer to the display area, the existing space can be utilized for the light sensor placement, and the light sensor does not additionally increase the width of the non-display area, which is beneficial for achieving a narrow bezel design.

[0011] In one possible implementation, the display panel further includes at least one isolation dam disposed in the non-display area; the light sensor is disposed on the side of the at least one isolation dam away from the display area. By disposing of the light sensor on the side of the at least one isolation dam away from the display area, the encapsulation layer can be prevented from covering the light sensor, reducing the impact of the encapsulation layer's light transmittance on the light sensor's detection accuracy. Furthermore, it can mitigate the impact of inconsistent encapsulation layer thickness in different display panels, or inconsistent encapsulation layer thickness at different locations within the display panel, on the light sensor's detection accuracy, thereby improving the light sensor's light sensitivity.

[0012] In one possible implementation, the display panel includes a display area and a non-display area, with the non-display area located around the perimeter of the display area. The display area also includes a second area where a light sensor is disposed. The second area could, for example, be a camera area within the display area. The light sensor is located in the display area, where light transmittance is high, resulting in high detection accuracy.

[0013] In one possible implementation, at least one photosensitive pixel includes a first photosensitive pixel, a second photosensitive pixel, and a third photosensitive pixel; the display panel further includes a red light filter layer or a green light filter layer disposed on the side of the first photosensitive pixel away from the substrate, and a light-shielding layer disposed on the side of the second photosensitive pixel away from the substrate. By setting a second photosensitive pixel blocked by the light-shielding layer and a third photosensitive pixel blocked by the light-transmitting layer, the second photosensitive pixel can be used as a reference photosensitive pixel, thereby improving the stability of the light sensor. However, due to the inconsistent color temperature of the light source itself, the detected light intensity will also be different under the same light intensity at different color temperatures. Therefore, by setting a first photosensitive pixel blocked by the red light filter layer or the green light filter layer, light intensity can be verified, improving the accuracy of light intensity detection. Thus, by setting a first photosensitive pixel, a second photosensitive pixel, and a third photosensitive pixel blocked by different film layers, fewer devices can be used to detect light intensity, simplifying the structure of the light sensor.

[0014] In one possible implementation, at least one photosensitive pixel includes a plurality of first photosensitive pixels, second photosensitive pixels, and third photosensitive pixels; the display panel further includes a red light filter layer disposed on the side of one first photosensitive pixel away from the substrate, a green light filter layer disposed on the side of one first photosensitive pixel away from the substrate, a blue light filter layer disposed on the side of one first photosensitive pixel away from the substrate, and a light-shielding layer disposed on the side of the second photosensitive pixel away from the substrate. By providing the red light filter layer, green light filter layer, and blue light filter layer, the light sensor can detect the spectrum of the light source, thereby enabling the light sensor to detect not only the light intensity but also the color temperature of the light. This allows electronic devices to adjust the color temperature of the display panel according to the color temperature of the light, improving the image quality.

[0015] In one possible implementation, the display panel further includes traces and a trace shielding layer; the traces are coupled to the photosensor, and the projection of the trace shielding layer onto the substrate overlaps with the projection of the trace onto the substrate; the traces can be traces coupled to any port of the photosensor, and a trace shielding layer is provided on the side of the trace closest to the substrate. By providing a trace shielding layer below the traces, interference caused by voltage drops from signals below the traces or from the outside can be shielded from the photosensor, thereby improving the signal-to-noise ratio of the photosensor.

[0016] In one possible implementation, the display panel further includes traces and a trace shielding layer; the traces are coupled to the photosensor, and the projection of the trace shielding layer on the substrate overlaps with the projection of the trace on the substrate; a trace shielding layer is disposed on the side of the trace away from the substrate. By providing a trace shielding layer above the traces, interference caused by voltage drops generated by signals above the traces or from the outside can be shielded from the photosensor, thereby improving the signal-to-noise ratio of the photosensor.

[0017] In one possible implementation, the display panel includes a reference ground voltage terminal, and a trace shielding layer is coupled to the reference ground voltage terminal. During the display process, the reference ground voltage of the reference ground voltage terminal does not change with the display state, and the trace shielding layer receives a stable reference ground voltage, which can improve the shielding effect on the traces.

[0018] In one possible implementation, the display panel includes a positive power supply voltage terminal for emitting light, and a trace shielding layer is coupled to the positive power supply voltage terminal. The voltage at the positive power supply voltage terminal is the voltage required for the display panel to display. The trace shielding layer can be directly coupled to the aforementioned voltage terminal without changing the port layout of the display panel, reducing the difficulty of introducing shielding signals. Furthermore, the voltage at the positive power supply voltage terminal does not change with the display state, and the trace shielding layer receives a stable voltage, which can improve the shielding effect on the traces.

[0019] In one possible implementation, the display panel includes a gate high-voltage terminal, and a trace shielding layer is coupled to the gate high-voltage terminal. The voltage at the gate high-voltage terminal is the voltage required for the display panel to display. The trace shielding layer can be directly coupled to the aforementioned voltage terminal without changing the port layout of the display panel, reducing the difficulty of introducing shielding signals. Furthermore, the voltage at the gate high-voltage terminal does not change with the display state, and the trace shielding layer receives a stable voltage, which can improve the shielding effect on the traces.

[0020] In one possible implementation, the display panel includes a gate low-voltage terminal, and a trace shielding layer is coupled to the gate low-voltage terminal. The voltage at the gate low-voltage terminal is the voltage required for the display panel to display. The trace shielding layer can be directly coupled to the aforementioned voltage terminal without changing the port layout of the display panel, reducing the difficulty of introducing shielding signals. Furthermore, the voltage at the gate low-voltage terminal does not change with the display state, and the trace shielding layer receives a stable voltage, which can improve the shielding effect on the traces.

[0021] In one possible implementation, the display panel further includes at least one gate driving circuit located on the same side of the display panel; a portion of the trace is disposed on the side of the at least one gate driving circuit facing the edge of the display panel. By routing the trace to the outside, the impact of signal lines connected to the display area on the trace can be reduced, thereby improving the signal-to-noise ratio of the light sensor.

[0022] In one possible implementation, the display panel further includes a first gate driving circuit and a second gate driving circuit located on the same side; a portion of the trace is disposed between the first gate driving circuit and the second gate driving circuit. By routing the trace between adjacent gate driving circuits, the trace can reuse the space between adjacent gate driving circuits without occupying space in the non-display area, which is beneficial for achieving a narrow bezel design.

[0023] In one possible implementation, the display panel further includes pixel circuitry disposed on a substrate. The pixel circuitry includes oxide transistors; the oxide transistors include a second active layer, which is disposed on the same layer as the top gate. By making the second active layer and the top gate disposed on the same layer, the top gate can be formed simultaneously during the fabrication of the second active layer, thus avoiding both additional process steps and increasing the thickness of the display panel.

[0024] In one possible implementation, the impedance of the top gate is less than the impedance of the second active layer. A low top gate impedance results in high conductivity, which can improve the gate control and shielding effects.

[0025] In one possible implementation, the display panel further includes a light-transmitting layer disposed on the side of the photosensor away from the substrate. The presence of the light-transmitting layer on the side of the photosensor away from the substrate reduces the impact of the film transmittance on the detection accuracy and sensitivity of the photosensor.

[0026] In one possible implementation, the bottom gate and top gate of the first photosensitive transistor are coupled, which can reduce the number of control ports and simplify the display panel structure.

[0027] In one possible implementation, the photosensitive pixel further includes a first switching transistor, a second switching transistor, and a third switching transistor. The gate of the first switching transistor is coupled to a first control terminal, the first electrode of the first switching transistor is coupled to a first voltage terminal, and the second electrode of the first switching transistor is coupled to the first electrode of the first photosensitive transistor. The bottom gate of the first photosensitive transistor is coupled to the first voltage terminal. The gate of the second switching transistor is coupled to a second control terminal, the first electrode of the second switching transistor is coupled to an output terminal, and the second electrode of the second switching transistor is coupled to the second electrode of the first photosensitive transistor and the first electrode of the third switching transistor. The gate of the third switching transistor is coupled to a third control terminal, and the second electrode of the third switching transistor is coupled to a second voltage terminal. By configuring the first, second, and third switching transistors, the photosensitive pixel can achieve the following: in the first time period, the first and second switching transistors are turned on, and the light sensor normally completes current acquisition. In the second time period, the first and second switching transistors are turned off, the third switching transistor is turned on, the light sensor stops current acquisition, and the first photosensitive transistor is reset. This can improve the impact of long-term voltage and optical bias on the detection accuracy of the optical sensor, and enhance the stability of the optical sensor and its long-term optical stability.

[0028] In one possible implementation, the photosensitive pixel further includes a second photosensitive transistor and a fourth switching transistor. The gate of the second photosensitive transistor is coupled to a first voltage terminal, the first electrode of the second photosensitive transistor is coupled to the second electrode of the first photosensitive transistor, and the second electrode of the second photosensitive transistor is coupled to the second electrode of the second switching transistor and the first electrode of the third switching transistor. The gate of the fourth switching transistor is coupled to a fourth control terminal, the first electrode of the fourth switching transistor is coupled to the first voltage terminal, and the second electrode of the fourth switching transistor is coupled to the second electrode of the first photosensitive transistor. By further configuring the second photosensitive transistor and the fourth switching transistor, the fourth switching transistor can be turned off at low brightness levels, allowing the first and second photosensitive transistors to jointly perform photoelectric conversion. This increases the current value of the light acquisition signal, enabling the sensor driver integrated circuit to characterize low brightness with a larger current value, thus allowing the sensor driver integrated circuit to accurately identify low brightness. At high brightness levels, the fourth switching transistor is turned on, and only the second photosensitive transistor performs photoelectric conversion, reducing the current value of the light acquisition signal. This allows the sensor driver integrated circuit to characterize high brightness with a smaller current value, thus enabling the sensor driver integrated circuit to accurately identify high brightness. This allows the same optical sensor to achieve both high-sensitivity detection in low-brightness conditions and low-current detection in high-brightness conditions, enabling the sensor driver integrated circuit to be compatible with both high-brightness and low-brightness detection accuracy.

[0029] In one possible implementation, the second photosensitive transistor is disposed on the same layer as the first photosensitive transistor, which can simplify the manufacturing process of the display panel.

[0030] In one possible implementation, the photosensitive pixel further includes a third photosensitive transistor and a fifth switching transistor. The bottom gate of the first photosensitive transistor is coupled to a third voltage terminal, the first electrode of the first photosensitive transistor is coupled to the third voltage terminal, and the second electrode of the first photosensitive transistor is coupled to the first electrode of the third photosensitive transistor and the second electrode of the fifth switching transistor. The gate of the third photosensitive transistor is coupled to the third voltage terminal, and the second electrode of the third photosensitive transistor is coupled to the output terminal. The gate of the fifth switching transistor is coupled to a fourth control terminal, and the first electrode of the fifth switching transistor is coupled to the third voltage terminal. By setting the first, third, and fifth photosensitive transistors, the fifth switching transistor can be turned off at low brightness, and the first and third photosensitive transistors jointly perform photoelectric conversion, which increases the current value of the light acquisition signal, allowing the sensor driver integrated circuit to characterize low brightness with a larger current value, thus enabling the sensor driver integrated circuit to accurately identify low brightness. At high brightness, the fifth switching transistor is turned on, and only the third photosensitive transistor performs photoelectric conversion, which reduces the current value of the light acquisition signal, allowing the sensor driver integrated circuit to characterize high brightness with a smaller current value, thus enabling the sensor driver integrated circuit to accurately identify high brightness. This allows the same optical sensor to achieve both high-sensitivity detection in low-brightness conditions and low-current detection in high-brightness conditions, enabling the sensor driver integrated circuit to be compatible with both high-brightness and low-brightness detection accuracy.

[0031] In one possible implementation, the third photosensitive transistor is disposed on the same layer as the first photosensitive transistor, which can simplify the manufacturing process of the display panel.

[0032] A second aspect of this application provides a display panel, which includes a display area and a non-display area, with the non-display area located around the display area. The display panel includes a substrate, a photosensor, and a transparent cathode layer. The photosensor is disposed on the substrate and located in the non-display area. The transparent cathode layer is disposed in the display area and extends into the non-display area; the projection of the transparent cathode layer onto the substrate does not overlap with the projection of the photosensor onto the substrate, or it can be understood that the photosensor is not covered by the transparent cathode layer.

[0033] The display panel provided in this application integrates the light sensor inside the display panel, which can reduce the impact of the display panel's light transmittance on the light sensor's detection accuracy. Furthermore, by reducing the coverage area of ​​the transparent cathode layer, eliminating the need for a transparent cathode layer above the light sensor, the influence of the display signal on the transparent cathode layer on the light sensor's detection accuracy can be reduced, thereby improving the light sensor's detection accuracy.

[0034] In one possible implementation, the display panel further includes a light-transmitting insulating layer disposed on the side of the light sensor away from the substrate. The presence of the light-transmitting insulating layer on the side of the light sensor away from the substrate can reduce the impact of the film transmittance on the detection accuracy and sensitivity of the light sensor.

[0035] In one possible implementation, the display panel further includes at least one isolation barrier disposed in the non-display area; the light sensor is disposed on the side of the at least one isolation barrier closer to the display area. By disposing the light sensor on the side of the at least one isolation barrier closer to the display area, the existing space can be utilized for the light sensor placement, and the light sensor does not additionally increase the width of the non-display area, which is beneficial for achieving a narrow bezel design.

[0036] In one possible implementation, the display panel further includes at least one isolation dam disposed in the non-display area; the light sensor is disposed on the side of the at least one isolation dam away from the display area. By disposing of the light sensor on the side of the at least one isolation dam away from the display area, the encapsulation layer can be prevented from covering the light sensor, reducing the impact of the encapsulation layer's light transmittance on the light sensor's detection accuracy. Furthermore, it can mitigate the impact of inconsistent encapsulation layer thickness in different display panels, or inconsistent encapsulation layer thickness at different locations within the display panel, on the light sensor's detection accuracy, thereby improving the light sensor's light sensitivity.

[0037] In one possible implementation, at least one photosensitive pixel includes a first photosensitive pixel, a second photosensitive pixel, and a third photosensitive pixel; the display panel further includes a red light filter layer or a green light filter layer disposed on the side of the first photosensitive pixel away from the substrate, and a light-shielding layer disposed on the side of the second photosensitive pixel away from the substrate. By setting a second photosensitive pixel blocked by the light-shielding layer and a third photosensitive pixel blocked by the light-transmitting layer, the second photosensitive pixel can be used as a reference photosensitive pixel, thereby improving the stability of the light sensor. However, due to the inconsistent color temperature of the light source itself, the detected light intensity will also be different under the same light intensity at different color temperatures. Therefore, by setting a first photosensitive pixel blocked by the red light filter layer or the green light filter layer, light intensity can be verified, improving the accuracy of light intensity detection. Thus, by setting a first photosensitive pixel, a second photosensitive pixel, and a third photosensitive pixel blocked by different film layers, fewer devices can be used to detect light intensity, simplifying the structure of the light sensor.

[0038] In one possible implementation, at least one photosensitive pixel includes a plurality of first photosensitive pixels, second photosensitive pixels, and third photosensitive pixels; the display panel further includes a red light filter layer disposed on the side of one first photosensitive pixel away from the substrate, a green light filter layer disposed on the side of one first photosensitive pixel away from the substrate, a blue light filter layer disposed on the side of one first photosensitive pixel away from the substrate, and a light-shielding layer disposed on the side of the second photosensitive pixel away from the substrate. By providing the red light filter layer, green light filter layer, and blue light filter layer, the light sensor can detect the spectrum of the light source, thereby enabling the light sensor to detect not only the light intensity but also the color temperature of the light. This allows electronic devices to adjust the color temperature of the display panel according to the color temperature of the light, improving the image quality.

[0039] In one possible implementation, the display panel further includes traces and a trace shielding layer; the traces are coupled to the photosensor, and the projection of the trace shielding layer on the substrate overlaps with the projection of the trace on the substrate; a trace shielding layer is disposed on the side of the trace closest to the substrate. By placing a trace shielding layer below the traces, interference from voltage drops caused by signals below the traces or from the outside can be shielded from the photosensor, thereby improving the signal-to-noise ratio of the photosensor.

[0040] In one possible implementation, the display panel further includes traces and a trace shielding layer; the traces are coupled to the photosensor, and the projection of the trace shielding layer on the substrate overlaps with the projection of the trace on the substrate; a trace shielding layer is disposed on the side of the trace away from the substrate. By providing a trace shielding layer above the traces, interference caused by voltage drops generated by signals above the traces or from the outside can be shielded from the photosensor, thereby improving the signal-to-noise ratio of the photosensor.

[0041] In one possible implementation, the display panel includes a reference ground voltage terminal, and a trace shielding layer is coupled to the reference ground voltage terminal. During the display process, the reference ground voltage of the reference ground voltage terminal does not change with the display state, and the trace shielding layer receives a stable reference ground voltage, which can improve the shielding effect on the traces.

[0042] In one possible implementation, the display panel includes a positive power supply voltage terminal for emitting light, and a trace shielding layer is coupled to the positive power supply voltage terminal. The voltage at the positive power supply voltage terminal is the voltage required for the display panel to display. The trace shielding layer can be directly coupled to the aforementioned voltage terminal without changing the port layout of the display panel, reducing the difficulty of introducing shielding signals. Furthermore, the voltage at the positive power supply voltage terminal does not change with the display state, and the trace shielding layer receives a stable voltage, which can improve the shielding effect on the traces.

[0043] In one possible implementation, the display panel includes a gate high-voltage terminal, and a trace shielding layer is coupled to the gate high-voltage terminal. The voltage at the gate high-voltage terminal is the voltage required for the display panel to display. The trace shielding layer can be directly coupled to the aforementioned voltage terminal without changing the port layout of the display panel, reducing the difficulty of introducing shielding signals. Furthermore, the voltage at the gate high-voltage terminal does not change with the display state, and the trace shielding layer receives a stable voltage, which can improve the shielding effect on the traces.

[0044] In one possible implementation, the display panel includes a gate low-voltage terminal, and a trace shielding layer is coupled to the gate low-voltage terminal. The voltage at the gate low-voltage terminal is the voltage required for the display panel to display. The trace shielding layer can be directly coupled to the aforementioned voltage terminal without changing the port layout of the display panel, reducing the difficulty of introducing shielding signals. Furthermore, the voltage at the gate low-voltage terminal does not change with the display state, and the trace shielding layer receives a stable voltage, which can improve the shielding effect on the traces.

[0045] In one possible implementation, the display panel further includes at least one gate driving circuit located on the same side of the display panel; a portion of the trace is disposed on the side of the at least one gate driving circuit facing the edge of the display panel. By routing the trace to the outside, the impact of signal lines connected to the display area on the trace can be reduced, thereby improving the signal-to-noise ratio of the light sensor.

[0046] In one possible implementation, the display panel further includes a first gate driving circuit and a second gate driving circuit located on the same side; a portion of the trace is disposed between the first gate driving circuit and the second gate driving circuit. By routing the trace between adjacent gate driving circuits, the trace can reuse the space between adjacent gate driving circuits without occupying space in the non-display area, which is beneficial for achieving a narrow bezel design.

[0047] In one possible implementation, the display panel further includes pixel circuitry disposed on a substrate. The pixel circuitry includes oxide transistors; the oxide transistors include a second active layer, which is disposed on the same layer as the top gate. By making the second active layer and the top gate disposed on the same layer, the top gate can be formed simultaneously during the fabrication of the second active layer, thus avoiding both additional process steps and increasing the thickness of the display panel.

[0048] In one possible implementation, the impedance of the top gate is less than the impedance of the second active layer. A low top gate impedance results in high conductivity, which can improve the gate control and shielding effects.

[0049] In one possible implementation, the display panel further includes a light-transmitting layer disposed on the side of the photosensor away from the substrate. The presence of the light-transmitting layer on the side of the photosensor away from the substrate reduces the impact of the film transmittance on the detection accuracy and sensitivity of the photosensor.

[0050] In one possible implementation, the bottom gate and top gate of the first photosensitive transistor are coupled, which can reduce the number of control ports and simplify the display panel structure.

[0051] In one possible implementation, the photosensitive pixel further includes a first switching transistor, a second switching transistor, and a third switching transistor. The gate of the first switching transistor is coupled to a first control terminal, the first electrode of the first switching transistor is coupled to a first voltage terminal, and the second electrode of the first switching transistor is coupled to the first electrode of the first photosensitive transistor. The bottom gate of the first photosensitive transistor is coupled to the first voltage terminal. The gate of the second switching transistor is coupled to a second control terminal, the first electrode of the second switching transistor is coupled to an output terminal, and the second electrode of the second switching transistor is coupled to the second electrode of the first photosensitive transistor and the first electrode of the third switching transistor. The gate of the third switching transistor is coupled to a third control terminal, and the second electrode of the third switching transistor is coupled to a second voltage terminal. By configuring the first, second, and third switching transistors, the photosensitive pixel can achieve the following: in the first time period, the first and second switching transistors are turned on, and the light sensor normally completes current acquisition. In the second time period, the first and second switching transistors are turned off, the third switching transistor is turned on, the light sensor stops current acquisition, and the first photosensitive transistor is reset. This can improve the impact of long-term voltage and optical bias on the detection accuracy of the optical sensor, and enhance the stability of the optical sensor and its long-term optical stability.

[0052] In one possible implementation, the photosensitive pixel further includes a second photosensitive transistor and a fourth switching transistor. The gate of the second photosensitive transistor is coupled to a first voltage terminal, the first electrode of the second photosensitive transistor is coupled to the second electrode of the first photosensitive transistor, and the second electrode of the second photosensitive transistor is coupled to the second electrode of the second switching transistor and the first electrode of the third switching transistor. The gate of the fourth switching transistor is coupled to a fourth control terminal, the first electrode of the fourth switching transistor is coupled to the first voltage terminal, and the second electrode of the fourth switching transistor is coupled to the second electrode of the first photosensitive transistor. By further configuring the second photosensitive transistor and the fourth switching transistor, the fourth switching transistor can be turned off at low brightness levels, allowing the first and second photosensitive transistors to jointly perform photoelectric conversion. This increases the current value of the light acquisition signal, enabling the sensor driver integrated circuit to characterize low brightness with a larger current value, thus allowing the sensor driver integrated circuit to accurately identify low brightness. At high brightness levels, the fourth switching transistor is turned on, and only the second photosensitive transistor performs photoelectric conversion, reducing the current value of the light acquisition signal. This allows the sensor driver integrated circuit to characterize high brightness with a smaller current value, thus enabling the sensor driver integrated circuit to accurately identify high brightness. This allows the same optical sensor to achieve both high-sensitivity detection in low-brightness conditions and low-current detection in high-brightness conditions, enabling the sensor driver integrated circuit to be compatible with both high-brightness and low-brightness detection accuracy.

[0053] In one possible implementation, the second photosensitive transistor is disposed on the same layer as the first photosensitive transistor, which can simplify the manufacturing process of the display panel.

[0054] In one possible implementation, the photosensitive pixel further includes a third photosensitive transistor and a fifth switching transistor. The bottom gate of the first photosensitive transistor is coupled to a third voltage terminal, the first electrode of the first photosensitive transistor is coupled to the third voltage terminal, and the second electrode of the first photosensitive transistor is coupled to the first electrode of the third photosensitive transistor and the second electrode of the fifth switching transistor. The gate of the third photosensitive transistor is coupled to the third voltage terminal, and the second electrode of the third photosensitive transistor is coupled to the output terminal. The gate of the fifth switching transistor is coupled to a fourth control terminal, and the first electrode of the fifth switching transistor is coupled to the third voltage terminal. By setting the first, third, and fifth photosensitive transistors, the fifth switching transistor can be turned off at low brightness, and the first and third photosensitive transistors jointly perform photoelectric conversion, which increases the current value of the light acquisition signal, allowing the sensor driver integrated circuit to characterize low brightness with a larger current value, thus enabling the sensor driver integrated circuit to accurately identify low brightness. At high brightness, the fifth switching transistor is turned on, and only the third photosensitive transistor performs photoelectric conversion, which reduces the current value of the light acquisition signal, allowing the sensor driver integrated circuit to characterize high brightness with a smaller current value, thus enabling the sensor driver integrated circuit to accurately identify high brightness. This allows the same optical sensor to achieve both high-sensitivity detection in low-brightness conditions and low-current detection in high-brightness conditions, enabling the sensor driver integrated circuit to be compatible with both high-brightness and low-brightness detection accuracy.

[0055] In one possible implementation, the third photosensitive transistor is disposed on the same layer as the first photosensitive transistor, which can simplify the manufacturing process of the display panel.

[0056] A third aspect of this application provides a display panel, which includes a substrate and a light sensor disposed on the substrate. The light sensor includes a first switching transistor, a second switching transistor, a third switching transistor, and a first photosensitive transistor. The gate of the first switching transistor is coupled to a first control terminal, the first electrode of the first switching transistor is coupled to a first voltage terminal, and the second electrode of the first switching transistor is coupled to the first electrode of the first photosensitive transistor; the gate of the first photosensitive transistor is coupled to the first voltage terminal; the gate of the second switching transistor is coupled to a second control terminal, the first electrode of the second switching transistor is coupled to an output terminal, and the second electrode of the second switching transistor is coupled to the second electrode of the first photosensitive transistor and the first electrode of the third switching transistor; the gate of the third switching transistor is coupled to a third control terminal, and the second electrode of the third switching transistor is coupled to a second voltage terminal.

[0057] The display panel provided in this application embodiment, by setting a first switching transistor, a second switching transistor, and a third switching transistor in the photosensitive pixel, enables the photosensitive pixel to achieve the following: in the first time period, the first and second switching transistors are turned on, and the light sensor normally completes current acquisition. In the second time period, the first and second switching transistors are turned off, and the third switching transistor is turned on, the light sensor stops current acquisition, and the first photosensitive transistor is reset. This can improve the impact of long-term voltage bias and light bias on the detection accuracy of the light sensor, and enhance the stability of the light sensor and its long-term light sensing stability.

[0058] In one possible implementation, the light sensor further includes a second photosensitive transistor and a fourth switching transistor. The gate of the second photosensitive transistor is coupled to a first voltage terminal, the first electrode of the second photosensitive transistor is coupled to the second electrode of the first photosensitive transistor, and the second electrode of the second photosensitive transistor is coupled to the second electrode of the second switching transistor. The gate of the fourth switching transistor is coupled to a fourth control terminal, the first electrode of the fourth switching transistor is coupled to the first voltage terminal, and the second electrode of the fourth switching transistor is coupled to the second electrode of the first photosensitive transistor. By further configuring the second photosensitive transistor and the fourth switching transistor, the fourth switching transistor can be turned off at low brightness levels, allowing the first and second photosensitive transistors to jointly perform photoelectric conversion. This increases the current value of the light acquisition signal, enabling the sensor driver integrated circuit to characterize low brightness with a larger current value, thus allowing the sensor driver integrated circuit to accurately identify low brightness. At high brightness levels, the fourth switching transistor is turned on, and only the second photosensitive transistor performs photoelectric conversion. This reduces the current value of the light acquisition signal, enabling the sensor driver integrated circuit to characterize high brightness with a smaller current value, thus allowing the sensor driver integrated circuit to accurately identify high brightness. This allows the same optical sensor to achieve both high-sensitivity detection in low-brightness conditions and low-current detection in high-brightness conditions, enabling the sensor driver integrated circuit to be compatible with both high-brightness and low-brightness detection accuracy.

[0059] A fourth aspect of this application provides a display panel, which includes a substrate and a light sensor disposed on the substrate. The light sensor includes a third photosensitive transistor, a fourth photosensitive transistor, and a fifth switching transistor. The gate of the third photosensitive transistor is coupled to a third voltage terminal, the first electrode of the third photosensitive transistor is coupled to the third voltage terminal, and the second electrode of the third photosensitive transistor is coupled to the first electrode of the fourth photosensitive transistor and the second electrode of the fifth switching transistor. The gate of the fourth photosensitive transistor is coupled to the gate of the third photosensitive transistor, and the second electrode of the fourth photosensitive transistor is coupled to an output terminal. The gate of the fifth switching transistor is coupled to a fifth control terminal, and the first electrode of the fifth switching transistor is coupled to the third voltage terminal.

[0060] The display panel provided in this application embodiment, by setting a third photosensitive transistor, a fourth photosensitive transistor, and a fifth switching transistor in the photosensitive pixels, can achieve the following: Under low brightness, the fifth switching transistor is turned off, and the third and fourth photosensitive transistors jointly perform photoelectric conversion, increasing the current value of the light acquisition signal. This allows the sensor driver integrated circuit to characterize low brightness with a larger current value, thus enabling the sensor driver integrated circuit to accurately identify low brightness. Under high brightness, the fifth switching transistor is turned on, and only the fourth photosensitive transistor performs photoelectric conversion, reducing the current value of the light acquisition signal. This allows the sensor driver integrated circuit to characterize high brightness with a smaller current value, thus enabling the sensor driver integrated circuit to accurately identify high brightness. Therefore, the same light sensor can achieve high-sensitivity detection under low brightness and low-current detection under high brightness, allowing the sensor driver integrated circuit to be compatible with both high-brightness and low-brightness detection accuracy.

[0061] A fifth aspect of this application provides a driving integrated circuit, which may be, for example, a display driving integrated circuit. The driving integrated circuit is used to drive a light sensor, which includes a first switching transistor, a second switching transistor, a third switching transistor, and a photosensitive transistor. The driving integrated circuit is used to output a first control signal and a second control signal during a first time period. The first control signal is used to control the first switching transistor to turn on, and the second control signal is used to control the second switching transistor to turn on. The driving integrated circuit is also used to output a third control signal and a second voltage during a second time period. The third control signal is used to control the third switching transistor to turn on, and the second voltage is used to reset the photosensitive transistor. The driving integrated circuit provided in this application is used to drive the light sensor in the display panel of the third aspect, and its beneficial effects are the same as those of the display panel of the third aspect, which will not be repeated here.

[0062] In one possible implementation, the light sensor further includes a fourth switching transistor and a second photosensitive transistor; the driving integrated circuit is also used to output a fourth control signal in the first time period, the fourth control signal being used to control the fourth switching transistor to turn on.

[0063] In one possible implementation, the driver integrated circuit is also used to output a first voltage during a first time period, the first voltage being used to control the conduction of the photosensitive transistor. A driver integrated circuit for outputting the first voltage to the optical driver can also be integrated into the driver integrated circuit, which can improve the integration level of the electronic device.

[0064] A sixth aspect of this application provides a driving integrated circuit for driving a light sensor, the light sensor including a fifth switching transistor, a third photosensitive transistor, and a fourth photosensitive transistor; the driving integrated circuit is used to output a fifth control signal, the fifth control signal being used to control the fifth switching transistor to turn on. The driving integrated circuit provided in this application is used to drive the light sensor in the display panel of the fourth aspect, and the beneficial effects are the same as those of the display panel of the fourth aspect, and will not be repeated here.

[0065] In one possible implementation, the driver integrated circuit is also used to output a third voltage, which controls the conduction of the third and fourth photosensitive transistors. A driver integrated circuit for outputting the third voltage to the optical driver can also be integrated into the driver integrated circuit, which can improve the integration level of the electronic device.

[0066] A seventh aspect of this application provides a display module, which includes a display panel and a display driver integrated circuit; the display driver integrated circuit is coupled to the display panel; the display panel includes any one of the display panels of the first to fourth aspects. And / or, the display driver integrated circuit includes a driver integrated circuit of the fifth aspect. The display module provided in this application includes the display panels of the first to fourth aspects, and its beneficial effects are the same as those of the display panels of the first to fourth aspects, which will not be repeated here.

[0067] In one possible implementation, the display driver integrated circuit is coupled to one or more of a first control terminal, a second control terminal, a third control terminal, a first voltage terminal, a second voltage terminal, and an output terminal. The display driver integrated circuit can also provide a first voltage as a positive power supply voltage to the optical driver; that is, a driver integrated circuit for outputting the first voltage to the optical driver can also be integrated within the display driver integrated circuit, which can improve the integration of the electronic device.

[0068] An eighth aspect of the embodiments of this application provides an electronic device, the electronic device including a drive controller and a display module as described in the seventh aspect; the drive controller is coupled to the display module.

[0069] In one possible implementation, the electronic device further includes a sensor driver integrated circuit, which is coupled to the display module; the display driver integrated circuit is coupled to one or more of the first control terminal, second control terminal, third control terminal, and second voltage terminal of the light sensor; and the sensor driver integrated circuit is coupled to the first voltage terminal and / or output terminal of the light sensor. The sensor driver integrated circuit can be discretely configured with respect to the display driver integrated circuit.

[0070] In one possible implementation, the display driver integrated circuit is coupled to the fourth control terminal, and the sensor driver integrated circuit is coupled to the third voltage terminal and / or output terminal.

[0071] A ninth aspect of this application provides a display driving method for driving an electronic device, the electronic device including a driving integrated circuit and a light sensor; the light sensor includes a first switching transistor, a second switching transistor, a third switching transistor, and a first photosensitive transistor. The display driving method includes: in a first time period, the driving integrated circuit outputs a first control signal, a second control signal, and a first voltage to control the first switching transistor, the second switching transistor, and the first photosensitive transistor to conduct and output a light acquisition signal; in a second time period, the driving integrated circuit outputs a third control signal and a second voltage to control the third switching transistor to conduct and transmit the second voltage to the first photosensitive transistor.

[0072] The display driving method provided in this application embodiment enables the photosensitive pixel to achieve the following: In the first time period, the first and second switching transistors are turned on, and the light sensor normally completes current acquisition. In the second time period, the first and second switching transistors are turned off, and the third switching transistor is turned on, the light sensor stops current acquisition, and the first photosensitive transistor is reset. This can improve the impact of long-term voltage bias and light bias on the detection accuracy of the light sensor, and enhance the stability of the light sensor and its long-term light sensing stability.

[0073] In one possible implementation, the light sensor further includes a second photosensitive transistor and a fourth switching transistor; the display driving method further includes: synchronously controlling the second photosensitive transistor to turn on during a first time period; and when the light acquisition signal is greater than a preset value, the driving integrated circuit also outputs a fourth control signal to control the fourth switching transistor to turn on. The display driving method can also achieve the following: under low brightness, the fourth switching transistor is turned off, and the first and second photosensitive transistors jointly perform photoelectric conversion, which can increase the current value of the light acquisition signal, allowing the sensor driving integrated circuit to characterize low brightness with a larger current value, thus enabling the sensor driving integrated circuit to accurately identify low brightness. Under high brightness, the fourth switching transistor is turned on, and only the second photosensitive transistor performs photoelectric conversion, which can reduce the current value of the light acquisition signal, allowing the sensor driving integrated circuit to characterize high brightness with a smaller current value, thus enabling the sensor driving integrated circuit to accurately identify high brightness. This achieves the effect of high-sensitivity detection under low brightness and low-current detection under high brightness using the same light sensor, allowing the sensor driving integrated circuit to be compatible with both high-brightness and low-brightness detection accuracy.

[0074] A tenth aspect of this application provides a display driving method. The electronic device includes a driving integrated circuit and a light sensor; the light sensor includes a fifth switching transistor, a third photosensitive transistor, and a fourth photosensitive transistor. The display driving method includes: the driving integrated circuit outputting a third voltage to control the third and fourth photosensitive transistors to conduct and output a first light acquisition signal; the driving integrated circuit receiving the first light acquisition signal; when the first light acquisition signal is greater than a preset value, outputting a fifth control signal and the third voltage; controlling the fifth switching transistor and the fourth photosensitive transistor to conduct and outputting a second light acquisition signal; and when the first light acquisition signal is less than or equal to a preset value, outputting the third voltage.

[0075] The display driving method provided in this application embodiment can achieve the following: Under low brightness, the fifth switching transistor is turned off, and the first and third photosensitive transistors jointly perform photoelectric conversion. This increases the current value of the light acquisition signal, allowing the sensor driving integrated circuit to characterize low brightness with a larger current value, thus enabling the sensor driving integrated circuit to accurately identify low brightness. Under high brightness, the fifth switching transistor is turned on, and only the third photosensitive transistor performs photoelectric conversion. This reduces the current value of the light acquisition signal, allowing the sensor driving integrated circuit to characterize high brightness with a smaller current value, thus enabling the sensor driving integrated circuit to accurately identify high brightness. This achieves the effect of high-sensitivity detection under low brightness and low-current detection under high brightness using the same light sensor, allowing the sensor driving integrated circuit to be compatible with both high-brightness and low-brightness detection accuracy. Attached Figure Description

[0076] Figure 1A is a structural schematic diagram of a watch provided in an embodiment of this application;

[0077] Figure 1B is a schematic diagram of the architecture of a watch provided in an embodiment of this application;

[0078] Figure 1C is a schematic diagram of the topology of a pixel circuit provided in an embodiment of this application;

[0079] Figure 2A is a schematic diagram of the installation position of an optical sensor provided in an embodiment of this application;

[0080] Figure 2B is a cross-sectional view of a display panel;

[0081] Figure 2C is a schematic diagram of another optical sensor installation location provided in an embodiment of this application;

[0082] Figure 2D is a cross-sectional view of another type of display panel;

[0083] Figure 3 is a cross-sectional view of a display panel provided in an embodiment of this application;

[0084] Figure 4 is a cross-sectional view of another display panel provided in an embodiment of this application;

[0085] Figures 5A and 5B are schematic diagrams of the structures of some optical sensors provided in the embodiments of this application;

[0086] Figure 5C is a schematic diagram of another optical sensor provided in an embodiment of this application;

[0087] Figure 6A is a schematic diagram of the installation position of another optical sensor provided in an embodiment of this application;

[0088] Figure 6B is a schematic diagram of the installation position of another optical sensor provided in an embodiment of this application;

[0089] Figure 7 is a cross-sectional view of another display panel provided in an embodiment of this application;

[0090] Figure 8 is a cross-sectional view of another display panel provided in an embodiment of this application;

[0091] Figures 9A and 9B are cross-sectional views of some more display panels provided in the embodiments of this application;

[0092] Figure 10A is a schematic diagram of the layout of a display panel provided in an embodiment of this application;

[0093] Figure 10B is a schematic diagram of another display panel layout provided in an embodiment of this application;

[0094] Figure 11A is a cross-sectional view along A1-A2 in Figure 10B provided by an embodiment of this application;

[0095] Figure 11B is another cross-sectional view along A1-A2 in Figure 10B provided by an embodiment of this application;

[0096] Figure 11C is a structural diagram of a second trace and a trace shielding layer provided in an embodiment of this application;

[0097] Figure 12 is a topological schematic diagram of an optical sensor provided in an embodiment of this application;

[0098] Figure 13 is a topological schematic diagram of another optical sensor provided in an embodiment of this application;

[0099] Figure 14 is a schematic diagram of the driving timing of an optical sensor provided in an embodiment of this application;

[0100] Figure 15A is a schematic diagram of the driving timing of another optical sensor provided in an embodiment of this application;

[0101] Figure 15B is a schematic diagram of the driving timing of another optical sensor provided in an embodiment of this application;

[0102] Figure 16 is a topological schematic diagram of another optical sensor provided in an embodiment of this application. Detailed Implementation

[0103] The technical solutions of the embodiments of this application will be described below with reference to the accompanying drawings. Obviously, the described embodiments are only some embodiments of this application, and not all embodiments.

[0104] Hereinafter, the terms "second," "first," etc., are used for descriptive convenience only and should not be construed as indicating or implying relative importance or implicitly specifying the number of indicated technical features. Therefore, a feature defined with "second," "first," etc., may explicitly or implicitly include one or more of that feature. In the description of this application, unless otherwise stated, "a plurality of" means two or more.

[0105] Furthermore, in the embodiments of this application, directional terms such as "upper," "lower," "left," and "right" may be defined relative to the orientation in which the components are schematically placed in the accompanying drawings. It should be understood that these directional terms can be relative concepts, used for relative description and clarification, and can change accordingly based on the orientation of the components in the accompanying drawings.

[0106] In the embodiments of this application, unless otherwise explicitly specified and limited, the term "connection" should be interpreted broadly. For example, "connection" can be a fixed connection, a detachable connection, or an integral part; it can be a direct connection or an indirect connection through an intermediate medium. Furthermore, the term "coupled connection" can be a direct electrical connection or an indirect electrical connection through an intermediate medium. The term "contact" can be direct contact or indirect contact through an intermediate medium.

[0107] In this embodiment of the application, "and / or" describes the relationship between associated objects, indicating that three relationships can exist. For example, A and / or B can represent: A existing alone, A and B existing simultaneously, or B existing alone, where A and B can be singular or plural. The character " / " generally indicates that the preceding and following associated objects have an "or" relationship.

[0108] This application provides an electronic device, which can be any electronic device with light intensity detection capabilities. When the ambient light intensity changes, the brightness of the electronic device's screen also changes accordingly. The electronic device can be, for example, a consumer electronics product, a home electronics product, an in-vehicle electronics product, or a financial electronics product. Consumer electronics products include mobile phones, tablets, laptops, e-readers, personal computers (PCs), personal digital assistants (PDAs), desktop monitors, smart wearable products (e.g., smartwatches, smart bracelets), virtual reality (VR) electronic devices, augmented reality (AR) electronic devices, mixed reality (MR) electronic devices, artificial intelligence (AI) electronic devices, drones, etc. Home electronics products include smart door locks, televisions, refrigerators, and rechargeable small household appliances (e.g., soymilk makers, robot vacuum cleaners), etc. In-vehicle electronics products include in-vehicle navigation systems, in-vehicle DVDs, etc. Financial electronics products include ATMs and self-service electronic devices, etc.

[0109] This application does not impose any special restrictions on the specific form of the above-mentioned electronic device. For the sake of convenience, the following embodiments all use a watch as an example for illustration.

[0110] Figure 1A is a structural schematic diagram of a watch provided in an embodiment of this application; Figure 1B is a structural schematic diagram of a watch provided in an embodiment of this application.

[0111] This application provides a watch, as shown in FIG1A. The watch 100 includes a watch body 200 and a watch strap 300. The watch body 200 and the watch strap 300 can be fixedly connected or detachably connected.

[0112] The watch body 200 can be round, rectangular or other shapes, and the watch 100 may also include spring bar components for connecting the watch body 200 and the watch strap 300.

[0113] The watch body 200 may include a housing 210 and a display panel 220. The display panel 220 serves as a data display unit and is used to display the screen to be displayed.

[0114] In some embodiments, as shown in FIG1B, the watch body 200 may further include a drive controller 240 and a display driver integrated circuit 230. The drive controller 240, as the core of the watch body 200, is used for overall system processing and control. The drive controller 240 is coupled to the display driver integrated circuit 230, and the drive controller 240 is used, for example, to receive image signals, control signals (e.g., provided by a central processing unit (CPU)), brightness signals, etc. The drive controller 240 outputs image data matching the interface specifications of the display driver integrated circuit 230 based on the image signals. The drive controller 240 can also generate illumination brightness instructions based on the brightness signals. The drive controller 240 may include, for example, a system-on-chip (SOC). The drive controller 240 can be coupled to the display driver integrated circuit 230 via a mobile industry processor interface (MIPI). Alternatively, the drive controller 240 can also be coupled to the display driver integrated circuit 230 via other high-speed serial / deserial (SerDes) interfaces.

[0115] The display driver integrated circuit 230 serves as the control core of the display panel 220, receiving data from the driver controller 240 and driving the display panel 220 to operate. The display driver integrated circuit 230 is, for example, coupled to the driver controller 240, receiving signals output by the driver controller 240, and providing the display panel 220 with the scan signals and data voltages required for light emission. The display driver integrated circuit 230 is also used to output scan control signals such as clock signals (clk), gate start signals (stv), and reset signals (rst) required for display to the display panel 220. The display driver integrated circuit 230 is also used to output positive light emission power supply voltage (elvdd), negative light emission power supply voltage (elvss), gate high voltage (Vgh), and gate low voltage (Vgl) to the display panel 220. The display driver integrated circuit 230 may include, for example, a display driver integrated circuit (DDIC).

[0116] For example, the display panel 220 can be a self-emissive display module such as an organic light-emitting diode (OLED) display module, an active-matrix organic light-emitting diode (AMOLED) display module, a mini organic light-emitting diode (Mini-OLED) display module, a micro light-emitting diode (Micro-LED) display module, a micro organic light-emitting diode (Micro-OLED) display module, or a quantum dot light-emitting diode (QLED) display module. In this case, the display panel 220 can be a rigid display screen or a flexible display screen.

[0117] The display panel 220 includes an active area (AA) and a non-display area (BB) surrounding the active area (AA). The active area (AA) is used to display images and includes multiple sub-pixels (SPs), each of which contains a pixel circuit 10.

[0118] For example, the pixel circuits 10 are arranged in a matrix. Pixel circuits 10 arranged in a row along the horizontal direction X are called the same row pixel circuits 10, and pixel circuits 10 arranged in a row along the vertical direction Y are called the same column pixel circuits 10.

[0119] In some embodiments, the pixel circuit 10 typically includes a driving circuit composed of multiple transistors and a light-emitting device. The driving circuit generates a driving current to drive the light-emitting device to emit light, thereby realizing the light emission of the pixel circuit 10. Multiple pixel circuits 10 are arrayed on a substrate. For example, the structure including a substrate and multiple arrayed driving circuits is called an array substrate. Multiple light-emitting devices are disposed on the array substrate, and the light-emitting devices are coupled to the pixel circuits one-to-one.

[0120] Figure 1C is a schematic diagram of the topology of a pixel circuit provided in an embodiment of this application.

[0121] In some embodiments, as shown in FIG1C, the pixel circuit 10 includes an anode reset circuit 111, a second node initialization circuit 112, a first node initialization circuit 113, a write and threshold compensation circuit 114, and an emissive control circuit 115. The pixel circuit 10 shown in FIG1C is merely an illustration and is not intended to limit the scope of the invention.

[0122] The anode reset circuit 111 includes a seventh transistor M7, the second node initialization circuit 112 includes an eighth transistor M8, the first node initialization circuit 113 includes a fourth transistor M4 and a third transistor M3, the write and threshold compensation circuit 114 includes a second transistor M2, a first transistor M1, a third transistor M3, and a storage capacitor Cst, and the light emission control circuit 115 includes a fifth transistor M5 and a sixth transistor M6. The first transistor M1 is a driving transistor, and the remaining transistors are switching transistors. The first node initialization circuit 113 and the write and threshold compensation circuit 114 share the third transistor M3.

[0123] The gate of the first transistor M1 is coupled to the first node N1, the first terminal of the first transistor M1 is coupled to the third node N3, and the second terminal of the first transistor M1 is coupled to the second node N2. The gate of the second transistor M2 is coupled to the fourth scan signal terminal S4, the first terminal of the second transistor M2 is coupled to the output voltage terminal Vd, and the second terminal of the second transistor M2 is coupled to the third node N3. The gate of the third transistor M3 is coupled to the third scan signal terminal S3, the first terminal of the third transistor M3 is coupled to the first node N1, and the second terminal of the third transistor M3 is coupled to the fourth node N4. The gate of the fourth transistor M4 is coupled to the second scan signal terminal S2, the first terminal of the fourth transistor M4 is coupled to the fourth node N4, and the second terminal of the fourth transistor M4 is coupled to the first reset voltage terminal Vinit1. The gate of the fifth transistor M5 is coupled to the light emission control scan signal terminal EM, the first terminal of the fifth transistor M5 is coupled to the positive light emission power supply voltage terminal ELVDD, and the second terminal of the fifth transistor M5 is coupled to the third node N3. The gate of the sixth transistor M6 is coupled to the light-emitting control scan signal terminal EM. The first terminal of the sixth transistor M6 is coupled to the second terminal N2, and the second terminal of the sixth transistor M6 is coupled to the fifth terminal N5. The gate of the seventh transistor M7 is coupled to the first scan signal terminal S1. The first terminal of the seventh transistor M7 is coupled to the fifth terminal N5, and the second terminal of the seventh transistor M7 is coupled to the second reset voltage terminal Vinit2. The gate of the eighth transistor M8 is coupled to the first scan signal terminal S1. The first terminal of the eighth transistor M8 is coupled to the second terminal N2, and the second terminal of the eighth transistor M8 is coupled to the third reset voltage terminal Vinit3. One end of the storage capacitor Cst is coupled to the positive power supply voltage terminal ELVDD, and the other end of the storage capacitor Cst is coupled to the first terminal N1. The fifth terminal N5 is used to couple to one terminal of the light-emitting device 224, and the other terminal of the light-emitting device 224 is coupled to the negative power supply voltage terminal ELVSS.

[0124] As shown in Figure 1B, the display panel 220 may also include multiple gate driver on array (GOA) circuits, which are coupled to the display panel 220 through gate line extension lines GL.

[0125] The signals of the first scan signal terminal S1, the second scan signal terminal S2, the third scan signal terminal S3, and the light emission control scan signal terminal EM are provided, for example, by GOA through the gate line extension line GL. The signals of the first reset voltage terminal Vinit1, the second reset voltage terminal Vinit2, the third reset voltage terminal Vinit3, the positive light emission power supply voltage terminal ELVDD, and the negative light emission power supply voltage terminal ELVSS are provided, for example, by the display driver integrated circuit 230 through the corresponding voltage lines (not shown in Figure 1B). The signal of the data voltage terminal Vd is provided, for example, by the display driver integrated circuit 230 through the data line DL.

[0126] A light sensor utilizes the photoelectric conversion function of optoelectronic devices to convert light signals on a photosensitive surface into corresponding electrical signals. Light sensors are used to detect ambient light levels. Electronic devices can adaptively adjust the brightness of their display panels based on the detected ambient light. Light sensors can also be used to automatically adjust white balance when taking photos. They can also work in conjunction with proximity sensors to detect if a watch is in a pocket. Light sensors can also be used for sunlight detection to tell the time under sunlight. Therefore, electronic devices that need to adjust their display brightness according to ambient light intensity integrate light sensors to achieve better display performance.

[0127] Since the transmittance of the display panel 220 has a significant impact on the actual ambient light intensity received by the light sensor when the light sensor is placed below it, the requirements for the light sensor's light sensitivity become more stringent. Furthermore, with the development of display panel 220 technology, the resolution of the display panel 220 has increased, the internal wiring density has increased, and the detection accuracy of the light sensor has gradually decreased.

[0128] This application provides a display panel 220 in which a light sensor is integrated within the display panel 220, instead of being located below the display panel 220. Therefore, the transmittance of the display panel 220 no longer affects the detection accuracy of the light sensor. By decoupling the detection accuracy of the light sensor from the transmittance of the display panel 220, the detection accuracy of the light sensor is improved.

[0129] Figure 2A is a schematic diagram of the setting position of a light sensor provided in an embodiment of this application, and Figure 2B is a cross-sectional view of a display panel.

[0130] In some embodiments, as shown in FIG2A, the electronic device includes a light sensor 221, which is integrated within a display panel 220 and disposed in the display area AA of the display panel 220. In this case, the electronic device may further include a sensor driver integrated circuit (sensor IC) 250, which is coupled to the light sensor 221 and is used to send a drive signal to the light sensor 221 and receive a light acquisition signal fed back by the light sensor 221.

[0131] A light sensor 221 is integrated into the display panel 220 to sense light and convert the light information into a signal, which is then transmitted to the sensor driver integrated circuit 250. The sensor driver integrated circuit 250 transmits the light information to the drive controller 240 and drives the light sensor 221. The drive controller 240 receives the signal from the sensor driver integrated circuit 250, processes it, and then controls the display brightness of the display panel 220 through the display driver integrated circuit 230.

[0132] As shown in Figure 2B, the display panel 220 includes a substrate 222, a thin film transistor (TFT) layer 223, and a light-emitting device 224. The substrate 222 can be made of materials such as polyimide (PI) or glass. The TFT layer 223 is formed on one side of the substrate 222 and includes, for example, the pixel circuit 10 and the photosensor 221 described above. The light-emitting device 224 is located on the side of the TFT layer 223 facing away from the substrate 222, and is used to emit light under the drive of the pixel circuit 10.

[0133] The display panel 220 may also include a thin-film encapsulation layer 225, such as an inkjet printing (IJP) layer. The thin-film encapsulation layer 225 covers the light-emitting device 224 and the light sensor 221, thereby encapsulating the light sensor 221 and the display panel 220 into a single structure. This avoids the light sensor 221 and the display panel 220 being stacked in the thickness direction, which helps to achieve a thinner and lighter overall structure for the display panel 220.

[0134] For example, the light-emitting device 224 includes an anode layer 2241, a light-emitting layer 2242, and a transparent cathode layer 2243 disposed on a substrate 222. Under the action of an electric field, holes generated in the anode layer 2241 and electrons generated in the transparent cathode layer 2243 will move and migrate to the light-emitting layer 2242. When holes and electrons meet in the light-emitting layer 2242, energy excitons are generated, thereby exciting the light-emitting molecules to finally generate visible light, so that the light-emitting device 224 emits light.

[0135] Figure 2C is a schematic diagram of the setting position of another optical sensor provided in an embodiment of this application, and Figure 2D is a cross-sectional view of another display panel.

[0136] In some embodiments, as shown in FIG2C, the electronic device includes a light sensor 221, which is integrated within a display panel 220 and disposed in the non-display area BB of the display panel 220. In this case, the electronic device may further include a sensor driver integrated circuit 250, which is coupled to the light sensor 221 and is used to send a drive signal to the light sensor 221 and receive a light acquisition signal fed back by the light sensor 221.

[0137] As shown in Figure 2D, the display panel 220 includes a substrate 222, a thin film transistor (TFT) layer 223, and a light-emitting device 224. The TFT layer 223 includes, for example, the pixel circuit 10 and the light sensor 221 described above. The pixel circuit 10 is located in the display area AA, and the light sensor 221 is located in the non-display area BB. Alternatively, the display panel 220 may include a plurality of isolation pillars DAM disposed on the substrate 222 and located in the non-display area BB, with the light sensor 221 disposed between adjacent isolation pillars DAM.

[0138] On the one hand, as shown in Figures 2B and 2D, the transparent cathode layer 2243 in the display panel 220 is a full-coverage structure, covering both the display area AA and the non-display area BB. Therefore, regardless of whether the light sensor 221 is located in the display area AA or the non-display area BB, the transparent cathode layer 2243 will always cover it. When the transparent cathode layer 2243 is powered on, it will interfere with the light sensor 221, causing a decrease in the light sensor's detection capability.

[0139] On the other hand, as shown in Figure 2A, when the light sensor 221 is located in the display area AA, it is coupled to the sensor driver integrated circuit 250 via traces. These traces need to be led from the display area AA to the non-display area BB, and then coupled to the sensor driver integrated circuit 250. However, the display panel 220 contains various transition signals, such as the signal at the light emission negative power supply voltage terminal ELVSS, the clock signal terminal CLK, the start signal terminal STV, and the signals on the data line DL, as illustrated in Figure 2A. During the process of leading the traces to the sensor driver integrated circuit 250, they may be coupled to the signal lines of one or more transition signals. The signals transmitted on these traces will be affected by the transition signals, causing the detection signal to be coupled with a certain amount of charge, generating noise and reducing the signal-to-noise ratio of the light sensor 221.

[0140] On the other hand, when the light sensor 221 detects illuminance, it will be subjected to long-term voltage bias and light bias, or in other words, the light sensor 221 will age due to use, causing the detection characteristics of the light sensor 221 to deviate, resulting in the current sensed by the light sensor 221 not corresponding to the actual intensity of the light, thus affecting the detection accuracy.

[0141] On the other hand, to enhance the detection accuracy of the light sensor 221 in low-brightness conditions, the size of the light sensor 221 is generally made relatively large, resulting in a higher detection current generated by the light sensor 221 under high-brightness conditions. However, the detection capability of the sensor driver integrated circuit 250 is limited. When the detection current exceeds the detection capability of the sensor driver integrated circuit 250, the sensor driver integrated circuit 250 cannot accurately detect the higher current, resulting in inaccurate detection under high brightness. This leads to the inability of electronic devices to simultaneously achieve both low-current detection accuracy under low brightness and high-current detection accuracy under high brightness.

[0142] This application embodiment also provides a display panel 220, in which a light sensor 221 is integrated. However, by changing the structure of the light sensor 221, the influence of the transparent cathode layer 2243 on the detection accuracy of the light sensor 221 can be reduced.

[0143] Figure 3 is a cross-sectional view of a display panel provided in an embodiment of this application.

[0144] This application provides a display panel 220, as shown in FIG3. The display panel 220 includes a substrate 222 and a light sensor 221.

[0145] Light sensor 221 is disposed on substrate 222. Light sensor 221 includes at least one photosensitive pixel. The photosensitive pixel includes a first photosensitive transistor TS1. The first photosensitive transistor TS1 includes a bottom gate G disposed on substrate 222. 底 First gate insulator layer GI1, first active layer AL1, second gate insulator layer GI2, top gate G 顶 The first electrode SD1 and the second electrode SD2 are respectively coupled to the first active layer AL1 through the second gate insulating layer GI2.

[0146] The first photosensitive transistor TS1 included in the light sensor 221 is a dual-gate transistor with a bottom gate G. 底 and top gate G 顶 They jointly control the first photosensitive transistor TS1. For example, the bottom gate G 底 and top gate G 顶 Coupled, or bottom gate G 底 and top gate G 顶Used to receive the same control signal at the same time. Bottom gate G 底 and top gate G 顶 Different voltages can be accepted at different times, allowing the first phototransistor TS1 to operate in different operating ranges.

[0147] For example, with the bottom gate G 底 and top gate G 顶 The coupled traces can be placed on the same layer as the first electrode SD1 or the second electrode SD2, and the traces are connected to the bottom gate G through vias. 底 and top gate G 顶 Coupling. The trace transmits a stable level signal, enabling the bottom gate G... 底 and top gate G 顶 In addition to its gate control function, it also features electrical shielding.

[0148] Bottom gate G 底 For example, it could be a bottom shield metal (BSM) layer pattern, the materials of the first gate insulating layer GI1 and the second gate insulating layer GI2 could include insulating dielectric materials, the material of the first active layer AL1 could include polycrystalline silicon (Poly-Si) materials, and the materials of the first electrode SD1 and the second electrode SD2 could include metallic materials.

[0149] Top gate G 顶 Materials include, for example, transparent and conductive materials. Top gate G 顶 The material can be a light-transmitting semiconductor material, with the top gate G... 顶 The material can also be a light-transmitting conductor. For example, the top gate G... 顶 The materials include indium zinc oxide (IZO), indium tin oxide (ITO), aluminum zinc oxide (AZO), indium fluorine oxide (IFO), or indium gallium zinc oxide (IGZO), etc. For example, the above-mentioned transparent semiconductor materials can be conductiveized through display processes to form conductive materials.

[0150] By using a conductive material with high light transmittance above the first active layer AL1, the top gate G can be reduced. 顶 The effect on light transmittance. A conductive material is used as the top gate G of the first photosensitive transistor TS1. 顶 This can improve the gate control effect of the first photosensitive transistor TS1.

[0151] For example, the first trace l1 coupled to the first electrode SD1 can be, for example, connected to the bottom gate G. 底 In a co-layer configuration, external signals are transmitted to the first electrode SD1 via the first trace l1. The first trace l1, coupled to the first electrode SD1, can also be co-layered with the first electrode SD1 or other metal layers; Figure 3 is merely an illustration. The first electrode SD1, for example, is coupled to the sensor driver integrated circuit 250 via the first trace l1 to achieve signal input or output. Similarly, the second electrode SD2 can also be coupled to the sensor driver integrated circuit 250 via a trace, forming the input and output of the optical sensor 221.

[0152] The display panel 220 provided in this application integrates the light sensor 221 inside the display panel 220, which can reduce the impact of the light transmittance of the display panel 220 on the detection accuracy of the light sensor 221. Based on this, the light sensor 221 is a dual-gate transistor with a top gate G... 顶 The materials include light-transmitting and conductive materials, and the top gate G 顶 Its conductivity can be used as the gate of the first photosensitive transistor TS1, the top gate G 顶 The light transmittance characteristics ensure the photoelectric conversion characteristics of the first photosensitive transistor TS1, enabling the light sensor 221 to have light intensity acquisition capabilities. Simultaneously, the top gate G... 顶 As the top shielding layer of the first photosensitive transistor TS1, it can shield the top gate G. 顶 The signal on the side furthest from the first active layer AL1 interferes with the photosensor 221. For example, the top gate G 顶 It can shield the light sensor 221 from interference caused by signals from the transparent cathode layer 2243 or external signals. Bottom gate G 底 As the bottom shielding layer of the first photosensitive transistor TS1, it can shield the bottom gate G. 底 The interference caused by signals from the side furthest from the first active layer AL1 to the photosensitive sensor 221 is mitigated. This improves the problem of inaccurate or undetectable detection caused by interference from conductive signals such as the transparent cathode layer 2243. Therefore, the display panel 220 provided in this embodiment can reduce the impact of factors such as the transmittance of the display panel 220 and interference from the internal conductive layer of the display panel 220 on the detection accuracy of the photosensitive sensor 221, thereby improving the detection accuracy of the photosensitive sensor 221.

[0153] Figure 4 is a cross-sectional view of another display panel provided in an embodiment of this application.

[0154] In some embodiments, as shown in FIG4, the display panel 220 may further include a pixel circuit disposed on a substrate 222, and the pixel circuit and the light sensor 221 are disposed on the same side of the substrate 222.

[0155] The pixel circuit includes an oxide transistor M. For example, the structure of the pixel circuit is shown in Figure 1C. The third transistor M3 in the pixel circuit 10 is an oxide transistor M. The oxide transistor M includes a gate G, a gate insulating layer GI, a second active layer AL2, a first electrode SD1' and a second electrode SD2', the second active layer AL2, and a top gate G. 顶 Same-layer settings.

[0156] Second active layer AL2 and top gate G 顶 Same-layer configuration, for example, can be understood as the second active layer AL2 and the top gate G. 顶 Different patterns are prepared from film layers formed using the same film deposition process. The second active layer AL2 and the top gate G... 顶 Physically, they may or may not be located on the same plane, as long as they are made of the same material.

[0157] By making the second active layer AL2 and the top gate G 顶 With the same layer configuration, the top gate G can be formed simultaneously during the fabrication of the second active layer AL2. 顶 This allows for both the elimination of additional process steps and the reduction of the thickness of the display panel 220.

[0158] In some embodiments, the top gate G 顶 The impedance is less than the impedance of the second active layer AL2. For example, in the formation of the second active layer AL2 and the top gate G 顶 After the semiconductor patterning, the top gate G 顶 Conducting a conductor-enhancing process on the semiconductor pattern improves the top gate G 顶 The conductivity of the top gate G is improved, thereby enhancing its conductivity. 顶 The gate control effect and shielding effect.

[0159] Figures 5A and 5B are schematic diagrams of the structures of some optical sensors provided in the embodiments of this application; Figure 5C is a schematic diagram of the structure of another optical sensor provided in the embodiments of this application.

[0160] In some embodiments, as shown in FIG5A, the light sensor includes a first photosensitive pixel PD1, a second photosensitive pixel PD2, and a third photosensitive pixel PD3. The display panel 220 may further include a red light filter layer R disposed on the side of the first photosensitive pixel PD1 away from the substrate 222, and a light-shielding layer disposed on the side of the second photosensitive pixel PD2 away from the substrate 222. The display panel 220 may further include a light-transmitting layer disposed on the side of the third photosensitive pixel PD3 away from the substrate 222.

[0161] The red light filter layer R can be understood, for example, as a red color filter (CF) commonly referred to in the art. The red light filter layer R, the light-shielding layer, and the light-transmitting layer can be isolated, for example, by a black martix (BM) to reduce optical crosstalk. The light-shielding layer can, for example, be set on the same layer as the black martix BM. A barrier can, for example, be set between the first photosensitive pixel PD1, the second photosensitive pixel PD2, and the third photosensitive pixel PD3 to reduce optical crosstalk.

[0162] The first photosensitive pixel PD1 can be understood as a verification photosensitive pixel, the second photosensitive pixel PD2 can be understood as a contrast pixel in the absence of light, and the third photosensitive pixel PD3 can be understood as a test photosensitive pixel.

[0163] The embodiments of this application do not limit the specific film structure located between the photosensitive pixel and the red light filter layer R, the light-transmitting layer or the light-shielding layer, as long as the film layer has light transmittance.

[0164] By setting a second photosensitive pixel PD2 that is blocked by a light-shielding layer and a third photosensitive pixel PD3 that is blocked by a light-transmitting layer, the stability of the light sensor 221 can be improved by using the second photosensitive pixel PD2 as a reference photosensitive pixel. However, due to the inconsistent color temperature of the light source itself, the detected light intensity will also be different under the same light intensity at different color temperatures. Therefore, by setting a first photosensitive pixel PD1 that is blocked by a red light filter layer R, the light intensity can be verified, improving the accuracy of light intensity detection. Thus, by setting a first photosensitive pixel PD1, a second photosensitive pixel PD2, and a third photosensitive pixel PD3 that are blocked by different film layers, the light intensity can be detected with fewer devices, simplifying the structure of the light sensor 221.

[0165] In other embodiments, as shown in FIG5B, the light sensor includes a first photosensitive pixel PD1, a second photosensitive pixel PD2, and a third photosensitive pixel PD3. The display panel 220 may further include a green light filter layer G disposed on the side of the first photosensitive pixel PD1 away from the substrate 222, and a light-shielding layer disposed on the side of the second photosensitive pixel PD2 away from the substrate 222. The display panel 220 may further include a light-transmitting layer disposed on the side of the third photosensitive pixel PD3 away from the substrate 222.

[0166] In some embodiments, as shown in FIG5C, the light sensor includes a plurality of first photosensitive pixels PD1, second photosensitive pixels PD2, and third photosensitive pixels PD3. A red light filter layer R is disposed on the side of one first photosensitive pixel PD1 away from the substrate 222, a green light filter layer G is disposed on another first photosensitive pixel PD1 away from the substrate 222, and a blue light filter layer B is disposed on yet another first photosensitive pixel PD1 away from the substrate 222. A light-shielding layer is disposed on the side of the second photosensitive pixel PD2 away from the substrate 222. A light-transmitting layer may also be disposed on the side of the third photosensitive pixel PD3 away from the substrate 222.

[0167] In some embodiments, the display area AA of the display panel 220 includes a color filter, with a red light filter layer R, a green light filter layer G, and a blue light filter layer B disposed in the same layer as the color filter of the display area AA. For example, the red light filter layer R, the green light filter layer G, and the blue light filter layer B are disposed on the side of the transparent cathode layer 2243 away from the substrate 222. The red light filter layer R, the green light filter layer G, and the blue light filter layer B can be formed simultaneously with the color filter of the display area AA, without increasing the process steps and thickness of the display panel 220.

[0168] In some other embodiments, the display area AA of the display panel 220 does not include color filters, and the red light filter layer R, the green light filter layer G, and the blue light filter layer B can be formed using separate process steps. In this case, the red light filter layer R, the green light filter layer G, and the blue light filter layer B can still be disposed on the side of the transparent cathode layer 2243 away from the substrate 222.

[0169] By setting a red light filter layer R, a green light filter layer G, and a blue light filter layer B, the light sensor 221 can detect the spectrum of the light source. This allows the light sensor 221 to detect not only the light intensity but also the color temperature of the light, thus enabling electronic devices to adjust the color temperature of the display panel 220 according to the color temperature of the light and improve the image quality.

[0170] In some other embodiments, the light sensor 221 includes only the aforementioned third photosensitive pixel PD3, and a light-transmitting layer is provided on the side of the third photosensitive pixel PD3 away from the substrate 222.

[0171] Figure 6A is a schematic diagram of the setting position of another optical sensor provided in an embodiment of this application; Figure 6B is a schematic diagram of the setting position of another optical sensor provided in an embodiment of this application.

[0172] In some embodiments, as shown in FIG6A, the display area AA of the display panel 220 may further include a second area AA2, and the light sensor 221 provided in this embodiment is disposed in the second area AA2. For example, the display area AA includes an effective display area and a camera area, and the light sensor 221 is disposed in the camera area.

[0173] In other embodiments, as shown in FIG6B, the non-display area BB of the display panel 220 includes a first region BB1 adjacent to the display area AA, and the light sensor 221 provided in this application embodiment is disposed in the first region BB1. For example, the non-display area BB includes a border area and an ink area, and the ink area corresponds to the ink position on the cover plate covering the light-emitting sensor of the display panel 220.

[0174] The light sensor 221 can be located on the top, bottom, left, or right side of the display panel 220. The top and bottom sides of the display panel 220 refer to the top and bottom edges of the display panel 220 when the electronic device is held vertically. Correspondingly, the left and right sides refer to the left and right edges of the display panel 220 with reference to the user's viewing angle.

[0175] For example, the side where the light sensor 221 is located is positioned opposite the side used to set the display driver integrated circuit 230. The circuit structure on the side opposite the display driver integrated circuit 230 is simple, and the integration of the light sensor 221 is less difficult.

[0176] The embodiments of this application do not limit the placement of the light sensor 221, as long as the light sensor 221 can receive light normally. For example, the light sensor 221 can be placed in the display area AA or the non-display area BB of the display panel 220, as long as the film layer above the light sensor 221 is a light-transmitting film layer.

[0177] In some embodiments, the display panel 220 may further include a light-transmitting layer disposed on the side of the photosensor 221 away from the substrate 222. This application embodiment does not limit the specific film layers included in the light-transmitting layer; the light-transmitting layer may not include opaque film layers. For example, the light-transmitting layer may include an inorganic insulating layer, an organic insulating layer, a light-transmitting conductive layer, etc.

[0178] This application embodiment also provides a display panel 220, in which a light sensor 221 is integrated. However, by changing the structure of the transparent cathode layer 2243, the influence of the transparent cathode layer 2243 on the detection accuracy of the light sensor 221 can be reduced.

[0179] Figure 7 is a cross-sectional view of another display panel provided in an embodiment of this application.

[0180] This application embodiment also provides a display panel 220, as shown in FIG7. The display panel 220 includes a substrate 222, a light sensor 221 and a transparent cathode layer 2243. The light sensor 221 and the transparent cathode layer 2243 are disposed on the same side of the substrate 222, and the projection of the transparent cathode layer 2243 on the substrate 222 does not overlap with the projection of the light sensor 221 on the substrate 222.

[0181] The light sensor 221 can be set in the display area AA or in the non-display area BB. Figure 7 illustrates the example of the light sensor 221 being set in the non-display area BB.

[0182] For example, the transparent cathode layer 2243 is disposed in the display area AA and can extend to the non-display area BB, but the transparent cathode layer 2243 does not cover the photosensor 221. For example, the display panel 220 includes traces coupled to the light-emitting negative power supply voltage terminal ELVSS, and the transparent cathode layer 2243 only needs to be coupled to the aforementioned traces.

[0183] In some embodiments, the side of the photosensitive sensor 221 away from the substrate 222 is no longer covered by the transparent cathode layer 2243 and other potential metals or semiconductors. A light-transmitting insulating stack is disposed on the side of the photosensitive sensor 221 away from the substrate 222, and the light-transmitting insulating stack includes an insulating film layer with high transmittance. For example, the light-transmitting insulating stack may include organic insulating layers and inorganic insulating layers, etc., to reduce the impact of the display signal or transmittance of the display panel 220 on the detection accuracy of the photosensitive sensor 221.

[0184] The display panel 220 provided in this application integrates the light sensor 221 inside the display panel 220, which can reduce the impact of the light transmittance of the display panel 220 on the detection accuracy of the light sensor 221. Furthermore, by reducing the coverage area of ​​the transparent cathode layer 2243, so that the transparent cathode layer 2243 is not disposed above the light sensor 221, the impact of the display signal on the transparent cathode layer 2243 on the detection accuracy of the light sensor 221 can be reduced, thereby improving the detection accuracy of the light sensor 221.

[0185] The structure of the light sensor 221 included in the display panel 220 can be any type of light sensor in the related art.

[0186] Figure 8 is a cross-sectional view of another display panel provided in an embodiment of this application.

[0187] In some embodiments, as shown in FIG8, the light sensor 221 includes at least one photosensitive pixel. The photosensitive pixel includes a first photosensitive transistor TS1. The first photosensitive transistor TS1 includes a gate G', a gate insulating layer GI', an active layer AL, a first electrode SD1” and a second electrode SD2” disposed on a substrate 222. The first electrode SD1” and the second electrode SD2” are coupled to the active layer AL. The first electrode SD1” can be coupled to a first trace l1 on the same layer as the gate G', for example, and the second electrode SD2” can be coupled to the gate G', for example. The specific coupling relationship is related to the topology of the photosensitive pixel, and FIG8 is only an illustration.

[0188] In some other embodiments, the structure of the first photosensitive transistor TS1 included in the light sensor 221 in the display panel 220 can refer to the structure of the light sensor 221 shown in FIG3 above.

[0189] In some other embodiments, the light sensor 221 may include a plurality of photosensitive pixels, and the structure of the light sensor 221 may refer to the structure of Figures 5A-5C above.

[0190] Figures 9A and 9B are cross-sectional views of some other display panels provided in the embodiments of this application.

[0191] For example, as shown in Figure 9A, the display panel 220 may also include at least one isolation dam DAM disposed in the non-display area BB. Figure 9A illustrates this by showing the display panel 220 including two isolation dams DAM. The light sensor is disposed on the side of the at least one isolation dam DAM near the display area AA.

[0192] The light sensor 221 can be any of the light sensors 221 illustrated above. For example, some of the photosensitive pixels of the light sensor 221 can be located between the isolation dam DAM closest to the display area AA and the substrate 222. For instance, a second photosensitive pixel PD2 is disposed between the isolation dam DAM closest to the display area AA and the substrate 222, and a light-shielding layer can be disposed on the side of the isolation dam DAM away from the substrate 222. By reusing the area occupied by the isolation dam DAM, the area of ​​the light sensor 221 can be reduced, which is beneficial for achieving a narrow bezel.

[0193] Alternatively, for example, all photosensitive pixels of the light sensor 221 are located inside the isolation dam DAM closest to the display area AA. For instance, the light sensor 221 illustrated in FIG5C is located directly inside the isolation dam DAM.

[0194] Regardless of the method, as long as the projection of the light sensor 221 does not exceed the outer edge of the projection of the isolation dam DAM closest to the display area AA, the light sensor 221 in this embodiment is disposed on the side of at least one isolation dam DAM closest to the display area AA. The transparent cathode layer 2243 extends to the non-display area BB, is coupled to the light-emitting negative power supply voltage terminal ELVSS, and does not cover the light sensor 221.

[0195] By placing the light sensor 221 on the side of at least one isolation dam DAM close to the display area AA, the existing space area can be used to set up the light sensor 221. The light sensor 221 does not increase the width of the non-display area BB, which is beneficial to achieving a narrow bezel design.

[0196] Alternatively, as shown in Figure 9B, the display panel 220 may also include at least one isolation dam DAM disposed in the non-display area BB. Figure 9B illustrates this with an example of the display panel 220 including two isolation dams DAM. The light sensor 221 is disposed on the side of the at least one isolation dam DAM away from the display area AA.

[0197] The display panel 220 may also include an encapsulation layer 225 that covers the display area AA and extends between the isolation dams DAM of the non-display area BB, without exceeding the range of the isolation dam DAM furthest from the display area AA.

[0198] By placing the light sensor 221 on the side of at least one isolation dam DAM away from the display area AA, the encapsulation layer 225 can be prevented from covering the light sensor 221, reducing the impact of the light transmittance of the encapsulation layer 225 on the detection accuracy of the light sensor 221. It can also improve the impact of inconsistent thickness of the encapsulation layer 225 in different display panels 220 or inconsistent thickness of the encapsulation layer 225 at different locations in the display panel 220 on the detection accuracy of the light sensor 221, thereby improving the light sensitivity of the light sensor 221.

[0199] This application embodiment also provides a display panel 220, in which a light sensor 221 is integrated. However, by changing the layout of the wiring coupled to the light sensor 221, the influence of the switching signal in the display panel 220 on the signal-to-noise ratio of the light sensor 221 can be improved.

[0200] Figure 10A is a schematic diagram of the layout of a display panel provided in an embodiment of this application; Figure 10B is a schematic diagram of the layout of another display panel provided in an embodiment of this application.

[0201] This application provides a display panel 220, as shown in FIG10A. The display panel 220 may further include a second trace l2, which is coupled to a light sensor 221. The second trace l2 may be a signal line coupled to any port of the light sensor 221.

[0202] The second trace l2 is also used to couple to the sensor driver integrated circuit 250 via a port, or the second trace l2 is also used to couple to the display driver integrated circuit 230 via a port.

[0203] The display panel 220 may also include at least one GOA located on the same side. Figure 10A illustrates this by showing an example where the display panel 220 includes one GOA on the same side. The second trace l2 is routed to the outside of at least one GOA and coupled to the sensor driver integrated circuit 250 or the display driver integrated circuit 230.

[0204] By routing the second trace l2 to the outside of GOA, the impact of the signal lines connecting GOA to the display area AA on the second trace l2 can be reduced, thereby improving the signal-to-noise ratio of the light sensor 221.

[0205] This application embodiment also provides a display panel 220, as shown in FIG10B. The display panel 220 may further include a second trace l2, which is coupled to a light sensor 221. The second trace l2 may be a signal line coupled to any port of the light sensor 221.

[0206] The second trace l2 is also used to couple to the sensor driver integrated circuit 250 via a port, or the second trace l2 is also used to couple to the display driver integrated circuit 230 via a port.

[0207] The display panel 220 may also include at least one gate drive circuit GOA located on the same side. Figure 10B illustrates an example where the display panel 220 includes a first gate drive circuit GOA1 and a second gate drive circuit GOA2 on the same side. A portion of the second trace l2 is disposed between the first gate drive circuit GOA1 and the second gate drive circuit GOA2.

[0208] When the display panel 220 includes multiple second traces l2, the multiple second traces l2 can all be located between the same group of adjacent gate drive circuits GOA, or the multiple second traces l2 can be located between different groups of adjacent gate drive circuits GOA.

[0209] By routing the second trace l2 between adjacent gate drive circuits GOA, the second trace l2 can reuse the space between adjacent gate drive circuits GOA without occupying the space of the non-display area BB alone, which is beneficial for achieving a narrow bezel design.

[0210] Figure 11A is a cross-sectional view along A1-A2 in Figure 10B provided by an embodiment of this application, and Figure 11B is a cross-sectional view along A1-A2 in Figure 10B provided by another embodiment of this application.

[0211] In some embodiments, as shown in FIG11A, the display panel 220 may further include a trace shielding layer 226, the projection of the trace shielding layer 226 on the substrate 222 overlapping the projection of the second trace l2 on the substrate 222. For example, the projection of the trace shielding layer 226 on the substrate 222 covers part or all of the second trace l2.

[0212] For example, a trace shielding layer 226 is provided on the side of the second trace l2 closest to the substrate 222. Alternatively, it can be understood that a trace shielding layer 226 is provided below the second trace l2.

[0213] By setting a trace shielding layer 226 below the second trace l2, the interference caused by the voltage drop (IR-drop) generated by the signal below the second trace l2 or the outside can be shielded from the optical sensor 221, thereby improving the signal-to-noise ratio of the optical sensor 221.

[0214] Alternatively, as shown in Figure 11A, a trace shielding layer 226 is provided on the side of the second trace l2 away from the substrate 222. Or, it can be understood that a trace shielding layer 226 is provided above the second trace l2.

[0215] By setting a trace shielding layer 226 above the second trace l2, the interference caused by the voltage drop generated by the signal above the second trace l2 or the outside can be shielded from the optical sensor 221. For example, the interference caused by the voltage drop generated by the signal change on the gate line extension line GL coupled to the gate drive circuit GOA can be shielded from the optical sensor 221, thereby improving the signal-to-noise ratio of the optical sensor 221.

[0216] Alternatively, as shown in Figure 11B, the second trace l2 is provided on both the side closer to the substrate 222 and the side farther from the substrate 222. Alternatively, it can be understood that a trace shielding layer 226 is provided above or below the second trace l2.

[0217] One or more insulating layers may be provided between the trace shielding layer 226 and the second trace l2, and no other signal lines are provided between the trace shielding layer 226 and the second trace l2. For example, the relevant gate extension lines GL and other signal lines displayed in the display panel 220 may be provided on the side of the trace shielding layer 226 away from the second trace l2.

[0218] The second trace l2 can, for example, be disposed on the same layer as the first source / drain metal layer in the display panel 220 that is closest to the substrate 222. The trace shielding layer 226 below the second trace l2 can, for example, be disposed on the same layer as the bottom gate G of the first photosensitive transistor TS1. 底 The trace shielding layer 226 above the second trace l2 can, for example, be set on the same layer as the second source / drain metal layer in the display panel 220. The gate extension line GL can, for example, be set on the same layer as the third source / drain metal layer in the display panel 220.

[0219] Figure 11C is a structural diagram of a second trace and a trace shielding layer provided in an embodiment of this application.

[0220] In some embodiments, as shown in FIG11C, the display panel 220 includes multiple second traces l2, which can be coupled to different ports in the photosensor 221. The trace shielding layer 226 corresponding to the multiple second traces l2 can be a one-piece structure. Alternatively, it can be understood that the multiple second traces l2 can be covered by the same trace shielding layer 226. This can improve the shielding effect and simplify the pattern of the trace shielding layer 226, reducing the manufacturing difficulty.

[0221] In some embodiments, the display panel 220 includes a reference ground voltage terminal GND, and a trace shielding layer 226 is coupled to the reference ground voltage terminal GND. The reference ground voltage of the reference ground voltage terminal GND can be provided, for example, by a sensor driver integrated circuit 250 in an electronic device.

[0222] During the display process of the display panel 220, the reference ground voltage of the reference ground voltage terminal GND does not change with the change of display state. The trace shielding layer 226 receives a stable reference ground voltage, which can improve the shielding effect of the second trace l2.

[0223] In other embodiments, the display panel 220 includes a light-emitting positive power supply voltage terminal ELVDD, and the trace shielding layer 226 is coupled to the positive power supply voltage terminal ELVDD.

[0224] In some other embodiments, the display panel includes a gate high voltage terminal VGH, to which a trace shielding layer 226 is coupled. The gate high voltage terminal VGH is used, for example, to provide the required high-voltage DC gate voltage for GOA driving.

[0225] In some other embodiments, the display panel includes a gate low voltage terminal VGL, to which a trace shielding layer 226 is coupled. The gate low voltage terminal VGL is used, for example, to provide the required gate low DC voltage for GOA driving.

[0226] The voltages at the positive power supply terminal ELVDD, the high gate voltage terminal VGH, and the low gate voltage terminal VGL are all required for the display panel 220 to display. The trace shielding layer 226 can be directly coupled to these voltage terminals without changing the port layout of the display panel 220, reducing the difficulty of introducing shielding signals. Furthermore, the voltages at the positive power supply terminal ELVDD, the high gate voltage terminal VGH, and the low gate voltage terminal VGL do not change with the display state. The trace shielding layer 226 receives stable voltages, which can improve the shielding effect on the second trace l2.

[0227] This application embodiment also provides a display panel 220, in which a light sensor 221 is integrated. However, by changing the topology of the light sensor 221, the long-term voltage bias and light bias can be improved to reduce the impact on the detection accuracy of the light sensor 221.

[0228] Figure 12 is a schematic diagram of the topology of an optical sensor provided in an embodiment of this application.

[0229] This application embodiment also provides a display panel 220, which includes one or more light sensors 221. The display panel 220 can be any type of display panel in the related art, or any of the display panels provided in this application embodiment. The display panel 220 has at least one light sensor 221, which is a photosensitive pixel.

[0230] As shown in Figure 12, the photosensitive pixel PD includes a first photosensitive transistor TS1, a first switching transistor T1, a second switching transistor T2, and a third switching transistor T3.

[0231] The gate of the first switching transistor T1 is coupled to the first control terminal Vs1, the first terminal of the first switching transistor T1 is coupled to the first voltage terminal PD-VCC, and the second terminal of the first switching transistor T1 is coupled to the first terminal of the first photosensitive transistor TS1.

[0232] The gate of the first photosensitive transistor TS1 is coupled to the first voltage terminal PD-VCC. In the case where the first photosensitive transistor TS1 included in the embodiments of this application is any of the above-mentioned first photosensitive transistor TS1, the gate of the first photosensitive transistor TS1 here can be the bottom gate G mentioned above. 底 and / or top gate G 顶 .

[0233] The gate of the second switching transistor T2 is coupled to the second control terminal Vs2, the first terminal of the second switching transistor T2 is coupled to the output terminal PD-O, and the second terminal of the second switching transistor T2 is coupled to the second terminal of the first photosensitive transistor TS1 and the first terminal of the third switching transistor T3.

[0234] The gate of the third switching transistor T3 is coupled to the third control terminal Vs3, and the second terminal of the third switching transistor T3 is coupled to the second voltage terminal VF.

[0235] The photosensitive pixel PD provided in this application embodiment is limited to including only the first photosensitive transistor TS1, the first switching transistor T1, the second switching transistor T2, and the third switching transistor T3 described above, but may also include other transistors. For example, the photosensitive pixel PD may also include switching transistors connected in series and / or in parallel with the first switching transistor T1, and any topology that achieves the same function as the first switching transistor T1 is applicable to the photosensitive pixel PD provided in this application embodiment. Similarly, the photosensitive pixel PD may also include transistors connected in series and / or in parallel with the first photosensitive transistor TS1, the second switching transistor T2, or the third switching transistor T3.

[0236] In some embodiments, the first switching transistor T1, the second switching transistor T2, and the third switching transistor T3 are transistors of the same type.

[0237] For example, the first switching transistor T1, the second switching transistor T2, and the third switching transistor T3 are all N-type transistors or all P-type transistors. The first control terminal Vs1 and the second control terminal Vs2 can receive the same control signal. For example, the first control terminal Vs1 and the second control terminal Vs2 are coupled, or the first control terminal Vs1 and the second control terminal Vs2 are the same control terminal.

[0238] In other embodiments, some of the first switching transistor T1, the second switching transistor T2, and the third switching transistor T3 are N-type transistors and some are P-type transistors.

[0239] For example, the first switching transistor T1 and the second switching transistor T2 are N-type transistors, and the third switching transistor T3 is a P-type transistor. The first control terminal Vs1 and the second control terminal Vs2 are coupled, or the first control terminal Vs1 and the second control terminal Vs2 are the same control terminal.

[0240] Alternatively, for example, the first switching transistor T1 and the third switching transistor T3 are N-type transistors, and the second switching transistor T2 is a P-type transistor. The second control terminal Vs2 and the third control terminal Vs3 are coupled, or the second control terminal Vs2 and the third control terminal Vs3 are the same control terminal.

[0241] Alternatively, for example, the second switching transistor T2 and the third switching transistor T3 are N-type transistors, and the first switching transistor T1 is a P-type transistor. The first control terminal Vs1 and the third control terminal Vs3 are coupled, or the first control terminal Vs1 and the third control terminal Vs3 are the same control terminal.

[0242] Figure 13 is a schematic diagram of the topology of another optical sensor provided in an embodiment of this application.

[0243] In some embodiments, as shown in FIG13, the photosensitive pixel PD may further include a second photosensitive transistor TS2 and a fourth switching transistor T4.

[0244] The gate of the second phototransistor TS2 is coupled to the first voltage terminal PD-VCC. The first terminal of the second phototransistor TS2 is coupled to the second terminal of the first phototransistor TS1. The second terminal of the second phototransistor TS2 is coupled to the second terminal of the second switching transistor T2 and the first terminal of the third switching transistor T3.

[0245] The second photosensitive transistor TS2 and the first photosensitive transistor TS1 share a common gate and are coupled in series. For example, in the display panel 220, the second photosensitive transistor TS2 and the first photosensitive transistor TS1 are disposed on the same layer and formed synchronously. For instance, the film layers of the second photosensitive transistor TS2 and the first photosensitive transistor TS1 are disposed on the same layer and formed synchronously. Alternatively, it can be understood that the second photosensitive transistor TS2 and the first photosensitive transistor TS1 can be formed synchronously using a single transistor fabrication process.

[0246] The gate of the fourth switching transistor T4 is coupled to the fourth control terminal Vs4, the first terminal of the fourth switching transistor T4 is coupled to the first voltage terminal PD-VCC, and the second terminal of the fourth switching transistor T4 is coupled to the second terminal of the first photosensitive transistor TS1. The fourth switching transistor T4 is used to change the potential of the second terminal of the first photosensitive transistor TS1 and the first terminal of the second photosensitive transistor TS2.

[0247] The photosensitive pixel PD may also include a switching transistor connected in series and / or in parallel with the fourth switching transistor T4. Any topology that achieves the same function as the fourth switching transistor T4 is applicable to the photosensitive pixel PD provided in the embodiments of this application. Similarly, the photosensitive pixel PD may also include a photosensitive transistor connected in series and / or in parallel with the second photosensitive transistor TS2. Any topology that achieves the same function as the second photosensitive transistor TS2 is applicable to the photosensitive pixel PD provided in the embodiments of this application.

[0248] Figure 14 is a schematic diagram of the driving timing of an optical sensor provided in an embodiment of this application.

[0249] This application embodiment also provides a driving integrated circuit, which is used to drive the above-mentioned optical sensor 221.

[0250] For example, taking the first switching transistor T1, the second switching transistor T2, and the third switching transistor T3 as all being P-type transistors, as shown in Figure 14, the driver integrated circuit outputs a first control signal vs1 and a second control signal vs2 during the first time period t1. The first control signal vs1 is used to control the first switching transistor T1 to turn on, and the second control signal vs2 is used to control the second switching transistor T2 to turn on. At this time, the third switching transistor T3 remains off. The first photosensitive transistor TS1 turns on under the control of the first voltage vcc.

[0251] The driver integrated circuit is also used to output a third control signal vs3 and a second voltage vf during the second time period t2. The third control signal vs3 is used to control the third switching transistor T3 to turn on, and the second voltage vf is used to reset the first photosensitive transistor TS1. At this time, the first switching transistor T1 and the second switching transistor T2 are turned off.

[0252] The first control signal vs1 and the second control signal vs2, and the third control signal vs3, can be, for example, inverses of each other. When the first switching transistor T1 and the second switching transistor T2 are turned on, the third switching transistor T3 is turned off. When the first switching transistor T1 and the second switching transistor T2 are turned off, the third switching transistor T3 is turned on.

[0253] For example, the driver integrated circuit is a display driver integrated circuit 230 in an electronic device. The display driver integrated circuit 230 is used to provide the aforementioned first control signal vs1, second control signal vs2, third control signal vs3, and second voltage vf to the light sensor 221.

[0254] In some embodiments, the driving integrated circuit is further configured to output a first voltage vcc during a first time period t1, the first voltage vcc being used to control the first photosensitive transistor TS1 to turn on. For example, the first voltage vcc may be an input signal of the light sensor 221, such as the first voltage vcc being the positive power supply for the light sensor 221, and the first voltage vcc may drive the first photosensitive transistor TS1 to perform photoelectric conversion.

[0255] In some embodiments, the driver integrated circuit is also used to receive the light acquisition signal output by the output PD-O, which may be, for example, the output signal of the light sensor 221.

[0256] For example, the driver integrated circuit includes the aforementioned sensor driver integrated circuit 250, which is used to output a first voltage Vcc and receive a light acquisition signal. For instance, the sensor driver integrated circuit 250 is integrated into the display driver integrated circuit 230 in an electronic device.

[0257] In some other embodiments, the sensor driver integrated circuit 250 is used to output a first voltage vcc and receive a light acquisition signal, and the sensor driver integrated circuit 250 is not integrated into the display driver integrated circuit 230.

[0258] Figure 15A is a driving timing diagram of another optical sensor provided in an embodiment of this application; Figure 15B is a driving timing diagram of yet another optical sensor provided in an embodiment of this application.

[0259] In some embodiments, taking the fourth switching transistor T4 as a P-type transistor as an example, as shown in FIG15A, the driving integrated circuit is also used to output a fourth control signal vs4 in the first time period t1. The fourth control signal vs4 is used to control the fourth switching transistor T4 to turn on, and transmit the first voltage vcc of the first voltage terminal PD-VCC to the second terminal of the first photosensitive transistor TS1 and the first terminal of the second photosensitive transistor TS2.

[0260] In the topology shown in Figure 13, the gates of the first phototransistor TS1 and the second phototransistor TS2 are connected in parallel, and their source and drain are connected in series. The first terminal of the first phototransistor TS1 receives the first voltage vcc transmitted through the first switching transistor T1, the gate of the first phototransistor TS1 receives the first voltage vcc, and the second terminal of the first phototransistor TS1 also receives the first voltage vcc. The first phototransistor TS1 no longer performs photoelectric conversion and is equivalent to a wire. Only the second phototransistor TS2 performs photoelectric conversion, and the electrical signal output by the second phototransistor TS2 is used as the light acquisition signal output by the light sensor 221.

[0261] For example, when the light acquisition signal is greater than a preset value, the driver integrated circuit outputs a fourth control signal vs4 to control the fourth switching transistor T4 to turn on.

[0262] Under high brightness conditions, the light sensor 221 receives the fourth control signal vs4, which controls the fourth switching transistor T4 to turn on. At this time, only the second photosensitive transistor TS2 performs photoelectric conversion, which reduces the current value of the light acquisition signal, allowing the sensor driver integrated circuit 250 to characterize high brightness with a smaller current value, thereby enabling the sensor driver integrated circuit 250 to accurately identify high brightness.

[0263] In some other embodiments, as shown in FIG15B, the driver integrated circuit is also used to output a fourth control signal vs4 in the first time period t1. The fourth control signal vs4 is used to control the fourth switching transistor T4 to be turned off, so that the first voltage vcc of the first voltage terminal PD-VCC cannot be transmitted to the second terminal of the first photosensitive transistor TS1 and the first terminal of the second photosensitive transistor TS2.

[0264] In the topology shown in Figure 13, the gates of the first phototransistor TS1 and the second phototransistor TS2 are connected in parallel, and their source and drain are connected in series. The first terminal of the first phototransistor TS1 receives the first voltage vcc transmitted through the first switching transistor T1, and the gate of the first phototransistor TS1 also receives the first voltage vcc. The second terminal of the first phototransistor TS1 is connected in series with the first terminal of the second phototransistor TS2. Both the first phototransistor TS1 and the second phototransistor TS2 perform photoelectric conversion, and the sum of the electrical signals output by the first phototransistor TS1 and the second phototransistor TS2 is used as the light acquisition signal output by the light sensor 221.

[0265] For example, when the optical acquisition signal is less than or equal to a preset value, the driver integrated circuit outputs a fourth control signal vs4 to control the fourth switching transistor T4 to turn off.

[0266] In low-brightness conditions, the light sensor 221 receives the fourth control signal vs4, which controls the fourth switching transistor T4 to turn off. At this time, the first photosensitive transistor TS1 and the second photosensitive transistor TS2 work together to perform photoelectric conversion, which can increase the current value of the light acquisition signal. This allows the sensor driver integrated circuit 250 to characterize low brightness with a larger current value, thereby enabling the sensor driver integrated circuit 250 to accurately identify low brightness.

[0267] The display panel 220 and / or driver integrated circuit provided in this application embodiment can be applied to the display module provided in this application embodiment.

[0268] For example, the driving integrated circuit included in the display module may be a display driving integrated circuit that integrates a sensor driving integrated circuit 250. The driving integrated circuit is coupled to one or more of the first control terminal Vs1, the second control terminal Vs2, the third control terminal Vs3, the fourth control terminal Vs4, the second voltage terminal PD-VCC, and the second voltage terminal VF of the light sensor 221.

[0269] For example, after the display module is applied in the electronic device provided in the embodiments of this application, the drive controller 240 is coupled to the display module.

[0270] For example, the display driver integrated circuit 230 in the display module does not integrate the sensor driver integrated circuit 250. The display driver integrated circuit 230 is coupled to one or more of the first control terminal Vs1, the second control terminal Vs2, the third control terminal Vs3, the fourth control terminal Vs4, and the second voltage terminal VF of the light sensor 221. Subsequently, it is coupled to the first voltage terminal PD-VCC and / or the output terminal PD-O through the sensor driver integrated circuit 250.

[0271] For example, after the display module is applied to the electronic device provided in the embodiments of this application, the drive controller 240 is coupled to the display module, and the sensor drive integrated circuit 250 is also coupled to the first voltage terminal PD-VCC and / or the output terminal PD-O in the display module.

[0272] This application also provides a display driving method, wherein the electronic device includes the above-described driving integrated circuit and the above-described light sensor 221.

[0273] The display driving method includes: In the first time period t1, the driving integrated circuit outputs a first control signal vs1, a second control signal vs2, and a first voltage vcc to control the first switching transistor T1, the second switching transistor T2, and the first photosensitive transistor TS1 to conduct and output a light acquisition signal. At this time, the third switching transistor T3 is turned off, and the output terminal PD-O outputs the light acquisition signal. The first time period t1 can be understood as the current acquisition stage. In the second time period t2, the driving integrated circuit outputs a third control signal vs3 and a second voltage vf to control the third switching transistor T3 to conduct and transmit the second voltage vf to the first photosensitive transistor TS1. The second voltage vf is transmitted to the second terminal of the first photosensitive transistor TS1 via the third switching transistor T3. The second voltage terminal VF can be, for example, a reset voltage terminal, and the second voltage vf can be a reset signal. The second stage t2 can be understood as the reset stage.

[0274] During the first time period t1, the light sensor 221 completes current acquisition normally. During the second time period t2, the light sensor 221 stops current acquisition and resets the first photosensitive transistor TS1. For example, a reverse voltage bias can be applied to the first photosensitive transistor TS1 to counteract its forward bias during prolonged operation. This mitigates the impact of long-term voltage and light bias on the detection accuracy of the light sensor 221, improving its stability and long-term light sensing stability.

[0275] In some embodiments, the display driving method may further include: synchronously controlling the second photosensitive transistor TS2 to turn on during a first time period t1. If the light acquisition signal is greater than a preset value, the driving integrated circuit also outputs a fourth control signal vs4 to control the fourth switching transistor T4 to turn on. During the first time period t1, a first voltage vcc synchronously controls the first photosensitive transistor TS1 and the second photosensitive transistor TS2 to turn on. The first photosensitive transistor TS1 and the second photosensitive transistor TS2 jointly perform photoelectric conversion, outputting the accumulated light acquisition signal. For example, the sensor driving integrated circuit 250 detects the light acquisition signal and outputs the detection result to the display driving integrated circuit 230. The display driving integrated circuit 230 determines whether the detection result is greater than a set value.

[0276] If the detection result is less than or equal to the set value, the display driver integrated circuit 230 outputs the fourth control signal vs4 to control the fourth switching transistor T4 to turn off, while the first photosensitive transistor TS1 and the second photosensitive transistor TS2 continue to work together to increase the current under low brightness.

[0277] When the display driver integrated circuit 230 determines that the detection result is greater than the set value, the display driver integrated circuit 230 outputs the fourth control signal vs4 to control the fourth switching transistor T4 to turn on, the first photosensitive transistor TS1 stops working, and the second photosensitive transistor TS2 works alone to reduce the current under high brightness.

[0278] Therefore, the same light sensor 221 in the electronic device can achieve high-sensitivity detection under low brightness and low-current detection under high brightness, so that the sensor driver integrated circuit 250 can be compatible with both high-brightness detection accuracy and low-brightness detection accuracy.

[0279] In some embodiments, the process of determining whether the detection result is greater than a preset value can also be performed by the sensor driver integrated circuit 250. This application embodiment does not limit the driver integrated circuit that makes the judgment program and outputs the control signal. This application embodiment is only an illustration.

[0280] This application embodiment also provides a display panel 220, in which a light sensor 221 is integrated. However, by changing the topology of the light sensor 221, both the low current detection accuracy under low brightness and the high current detection accuracy under high brightness can be achieved.

[0281] Figure 16 is a topological schematic diagram of another optical sensor provided in an embodiment of this application.

[0282] This application embodiment also provides a display panel 220, which includes one or more light sensors 221. The display panel 220 can be any type of display panel in the related art, or any of the display panels provided in this application embodiment. The display panel 220 has at least one light sensor 221, which is a photosensitive pixel.

[0283] As shown in Figure 16, the photosensitive pixel PD includes a third photosensitive transistor TS3, a fourth photosensitive transistor TS4, and a fifth switching transistor T5. For example, the third photosensitive transistor TS3 and the fourth photosensitive transistor TS4 can be arranged in the same layer.

[0284] The gate of the third phototransistor TS3 is coupled to the third voltage terminal VCC. The first terminal of the third phototransistor TS3 is coupled to the third voltage terminal VCC. The second terminal of the third phototransistor TS3 is coupled to the first terminal of the fourth phototransistor TS4 and the second terminal of the fifth switching transistor T5.

[0285] The gate of the fourth phototransistor TS4 is coupled to the third voltage terminal VCC, and the second terminal of the fourth phototransistor TS4 is coupled to the output terminal PD-O. The gate of the fifth switching transistor T5 is coupled to the fifth control terminal Vs5, and the first terminal of the fifth switching transistor T5 is coupled to the third voltage terminal VCC.

[0286] The photosensitive pixel PD provided in this application embodiment is limited to including only the third photosensitive transistor TS3, the fourth photosensitive transistor TS4, and the fifth switching transistor T5, but may also include other transistors. For example, the photosensitive pixel PD may also include switching transistors connected in series and / or in parallel with the fifth switching transistor T5. Topologies that achieve the same function as the fifth switching transistor T5 are all applicable to the photosensitive pixel PD provided in this application embodiment. For example, the fifth switching transistor T5 may be an N-type transistor or all of them may be P-type transistors.

[0287] This application embodiment also provides a driving integrated circuit, which is used to drive the above-mentioned optical sensor 221.

[0288] In some embodiments, the driver integrated circuit is used to output a fifth control signal, which controls the fifth switching transistor T5 to turn on, transmitting the third voltage of the third voltage terminal VCC to the second terminal of the third photosensitive transistor TS3 and the first terminal of the fourth photosensitive transistor TS4. For example, the driver integrated circuit is a display driver integrated circuit in an electronic device.

[0289] For example, the driver integrated circuit is also used to output a third voltage, which controls the conduction of the third photosensitive transistor TS3 and the fourth photosensitive transistor TS4 to output a light acquisition signal. For instance, the driver integrated circuit may also integrate a sensor driver integrated circuit.

[0290] The first terminal of the third phototransistor TS3 receives the third voltage, the gate of the third phototransistor TS3 receives the third voltage, and the second terminal of the third phototransistor TS3 receives the third voltage transmitted via the fifth switching transistor T5. The third phototransistor TS3 no longer performs photoelectric conversion and is equivalent to a wire. Only the fourth phototransistor TS4 performs photoelectric conversion, and the electrical signal output by the fourth phototransistor TS4 is used as the light acquisition signal output by the light sensor 221.

[0291] For example, when the light acquisition signal is greater than a preset value, the drive integrated circuit outputs a fifth control signal to control the fifth switching transistor T5 to turn on.

[0292] Under high brightness conditions, the light sensor 221 receives the fifth control signal, which controls the fifth switching transistor T5 to turn on. At this time, only the fourth photosensitive transistor TS4 performs photoelectric conversion, which reduces the current value of the light acquisition signal, allowing the sensor driver integrated circuit 250 to characterize high brightness with a smaller current value, thereby enabling the sensor driver integrated circuit 250 to accurately identify high brightness.

[0293] In other embodiments, the driver integrated circuit is also used to output a fifth control signal, which controls the fifth switching transistor T5 to turn off, preventing the third voltage of the third voltage terminal VCC from being transmitted to the second terminal of the third photosensitive transistor TS3 and the first terminal of the fourth photosensitive transistor TS4.

[0294] For example, the driver integrated circuit is also used to output a third voltage, which controls the conduction of the third photosensitive transistor TS3 and the fourth photosensitive transistor TS4 to output a light acquisition signal. For instance, the driver integrated circuit may also integrate a sensor driver integrated circuit.

[0295] The first terminal of the third phototransistor TS3 receives the third voltage, and the gate of the third phototransistor TS3 also receives the third voltage. The second terminal of the third phototransistor TS3 is connected in series with the first terminal of the fourth phototransistor TS4. Both the third phototransistor TS3 and the fourth phototransistor TS4 perform photoelectric conversion, and the sum of the electrical signals output by the third phototransistor TS3 and the fourth phototransistor TS4 is used as the light acquisition signal output by the light sensor 221.

[0296] For example, when the light acquisition signal is less than or equal to a preset value, the drive integrated circuit outputs a fifth control signal to control the fifth switching transistor T5 to turn off.

[0297] In low-brightness conditions, the light sensor 221 receives the fifth control signal, which controls the fifth switching transistor T5 to turn off. At this time, the third photosensitive transistor TS3 and the fourth photosensitive transistor TS4 work together to perform photoelectric conversion, which can increase the current value of the light acquisition signal. This allows the sensor driver integrated circuit 250 to characterize low brightness with a larger current value, thereby enabling the sensor driver integrated circuit 250 to accurately identify low brightness.

[0298] The display panel 220 and / or driver integrated circuit provided in this application embodiment can be applied to the display module provided in this application embodiment. After the display module is applied to the electronic device provided in this application embodiment, the driver controller 240 is coupled to the display module. The electronic device may also include a sensor driver integrated circuit 250 coupled to the display module.

[0299] This application also provides a display driving method, wherein the electronic device includes the above-described driving integrated circuit and the above-described light sensor 221.

[0300] The display driving method includes: a driving integrated circuit outputting a third voltage to control the synchronous conduction of a third photosensitive transistor TS3 and a fourth photosensitive transistor TS4; the third photosensitive transistor TS3 and the fourth photosensitive transistor TS4 jointly perform photoelectric conversion, outputting an accumulated first light acquisition signal; and the driving integrated circuit receiving the first light acquisition signal.

[0301] For example, the sensor driver integrated circuit 250 detects the light acquisition signal and outputs the detection result to the display driver integrated circuit 230. The display driver integrated circuit 230 determines whether the detection result is greater than a set value.

[0302] When the first light acquisition signal is greater than the preset value, the fifth control signal and the third voltage are output to control the fifth switching transistor T5 and the fourth photosensitive transistor TS4 to turn on, and the second light acquisition signal is output.

[0303] For example, when the first light acquisition signal is greater than a preset value, the display driver integrated circuit 230 outputs a fifth control signal to control the fifth switching transistor T5 to turn on, the third photosensitive transistor TS3 to stop working, and the fourth photosensitive transistor TS4 to work independently, reducing the current under high brightness.

[0304] When the first light acquisition signal is less than or equal to a preset value, the display driver integrated circuit 230 outputs a fifth control signal and a third voltage to control the fifth switching transistor T5 to turn off. The third photosensitive transistor TS3 and the fourth photosensitive transistor TS4 work together to output a second light acquisition signal and increase the current under low brightness.

[0305] Therefore, the same light sensor 221 in the electronic device can achieve high-sensitivity detection under low brightness and low-current detection under high brightness, so that the sensor driver integrated circuit 250 can be compatible with both high-brightness detection accuracy and low-brightness detection accuracy.

[0306] In some embodiments, the process of determining whether the detection result is greater than a preset value can also be performed by the sensor driver integrated circuit 250. This application embodiment does not limit the driver integrated circuit that makes the judgment program and outputs the control signal. This application embodiment is only an illustration.

[0307] The above are merely specific embodiments of this application. The components in the display panel 220 illustrated in the embodiments can be arbitrarily combined in different display panels 220. The protection scope of this application is not limited to the structure illustrated in the embodiments. Any changes or substitutions within the technical scope disclosed in this application should be covered within the protection scope of this application. Therefore, the protection scope of this application should be determined by the protection scope of the claims.

Claims

1. A display panel, characterized in that, The display panel includes: Substrate; A light sensor is disposed on the substrate; the light sensor includes at least one photosensitive pixel; the photosensitive pixel includes a first photosensitive transistor, the first photosensitive transistor including a bottom gate, a first gate insulating layer, a first active layer, a second gate insulating layer, a top gate, a first electrode and a second electrode disposed on the substrate, the first electrode and the second electrode respectively passing through the second gate insulating layer and coupled to the first active layer; the material of the top gate includes a light-transmitting conductive material.

2. The display panel according to claim 1, characterized in that, The display panel includes a display area and a non-display area, wherein the non-display area is located around the display area. The non-display area includes a first region adjacent to the display area, and the light sensor is disposed in the first region.

3. The display panel according to claim 2, characterized in that, The display panel also includes a transparent cathode layer; The projection of the transparent cathode layer onto the substrate does not overlap with the projection of the optical sensor onto the substrate.

4. The display panel according to claim 1, characterized in that, The display panel includes a display area and a non-display area, wherein the non-display area is located around the display area. The display area also includes a second area, in which the light sensor is disposed.

5. The display panel according to any one of claims 1-4, characterized in that, The display panel further includes wiring and a wiring shielding layer; the wiring is coupled to the photosensor, and the projection of the wiring shielding layer on the substrate overlaps with the projection of the wiring on the substrate; The trace is provided with a trace shielding layer on the side of the trace that is close to and / or far from the substrate; The display panel includes a reference ground voltage terminal, and the trace shielding layer is coupled to the reference ground voltage terminal; or, The display panel includes a light-emitting positive power supply voltage terminal, and the wiring shielding layer is coupled to the positive power supply voltage terminal; or, The display panel includes a gate high-voltage terminal, and the wiring shielding layer is coupled to the gate high-voltage terminal; or, The display panel includes a gate low voltage terminal, and the wiring shielding layer is coupled to the gate low voltage terminal.

6. The display panel according to claim 5, characterized in that, The display panel also includes a first gate driving circuit and a second gate driving circuit located on the same side. A portion of the trace is positioned between the first gate driving circuit and the second gate driving circuit.

7. The display panel according to any one of claims 1-6, characterized in that, The display panel further includes a pixel circuit disposed on the substrate, the pixel circuit including oxide transistors; The oxide transistor includes a second active layer, which is disposed in the same layer as the top gate.

8. The display panel according to claim 7, characterized in that, The impedance of the top gate is less than the impedance of the second active layer.

9. The display panel according to any one of claims 1-8, characterized in that, The photosensitive pixel further includes a first switching transistor, a second switching transistor, and a third switching transistor; The gate of the first switching transistor is coupled to the first control terminal, the first terminal of the first switching transistor is coupled to the first voltage terminal, and the second terminal of the first switching transistor is coupled to the first terminal of the first photosensitive transistor. The bottom gate of the first photosensitive transistor is coupled to the first voltage terminal; The gate of the second switching transistor is coupled to the second control terminal, the first terminal of the second switching transistor is coupled to the output terminal, and the second terminal of the second switching transistor is coupled to the second terminal of the first photosensitive transistor and the first terminal of the third switching transistor. The gate of the third switching transistor is coupled to the third control terminal, and the second terminal of the third switching transistor is coupled to the second voltage terminal.

10. The display panel according to claim 9, characterized in that, The photosensitive pixel also includes a second photosensitive transistor and a fourth switching transistor; The gate of the second photosensitive transistor is coupled to the first voltage terminal, the first terminal of the second photosensitive transistor is coupled to the second terminal of the first photosensitive transistor, and the second terminal of the second photosensitive transistor is coupled to the second terminal of the second switching transistor and the first terminal of the third switching transistor. The gate of the fourth switching transistor is coupled to the fourth control terminal, the first terminal of the fourth switching transistor is coupled to the first voltage terminal, and the second terminal of the fourth switching transistor is coupled to the second terminal of the first photosensitive transistor.

11. The display panel according to any one of claims 1-8, characterized in that, The photosensitive pixel also includes a third photosensitive transistor and a fifth switching transistor; The bottom gate of the first photosensitive transistor is coupled to the third voltage terminal, the first electrode of the first photosensitive transistor is coupled to the third voltage terminal, and the second electrode of the first photosensitive transistor is coupled to the first electrode of the third photosensitive transistor and the second electrode of the fifth switching transistor. The gate of the third photosensitive transistor is coupled to the third voltage terminal, and the second terminal of the third photosensitive transistor is coupled to the output terminal; The gate of the fifth switching transistor is coupled to the fourth control terminal, and the first terminal of the fifth switching transistor is coupled to the third voltage terminal.

12. A display panel, characterized in that, The display panel includes: Substrate; An optical sensor is disposed on the substrate; the optical sensor includes a first switching transistor, a second switching transistor, a third switching transistor, and a first photosensitive transistor; The gate of the first switching transistor is coupled to the first control terminal, the first terminal of the first switching transistor is coupled to the first voltage terminal, and the second terminal of the first switching transistor is coupled to the first terminal of the first photosensitive transistor. The gate of the first photosensitive transistor is coupled to the first voltage terminal; The gate of the second switching transistor is coupled to the second control terminal, the first terminal of the second switching transistor is coupled to the output terminal, and the second terminal of the second switching transistor is coupled to the second terminal of the first photosensitive transistor and the first terminal of the third switching transistor. The gate of the third switching transistor is coupled to the third control terminal, and the second terminal of the third switching transistor is coupled to the second voltage terminal.

13. The display panel according to claim 12, characterized in that, The optical sensor also includes a second photosensitive transistor and a fourth switching transistor; The gate of the second photosensitive transistor is coupled to the first voltage terminal, the first terminal of the second photosensitive transistor is coupled to the second terminal of the first photosensitive transistor, and the second terminal of the second photosensitive transistor is coupled to the second terminal of the second switching transistor; The gate of the fourth switching transistor is coupled to the fourth control terminal, the first terminal of the fourth switching transistor is coupled to the first voltage terminal, and the second terminal of the fourth switching transistor is coupled to the second terminal of the first photosensitive transistor.

14. A driver integrated circuit, characterized in that, The driving integrated circuit is used to drive the optical sensor, which includes a first switching transistor, a second switching transistor, a third switching transistor, and a photosensitive transistor. The driving integrated circuit is used to output a first control signal and a second control signal in a first time period. The first control signal is used to control the first switching transistor to turn on, and the second control signal is used to control the second switching transistor to turn on. The driving integrated circuit is also used to output a third control signal and a second voltage in the second time period. The third control signal is used to control the third switching transistor to turn on, and the second voltage is used to reset the photosensitive transistor.

15. The driver integrated circuit according to claim 14, characterized in that, The optical sensor also includes a fourth switching transistor and a second photosensitive transistor; The driving integrated circuit is also used to output a fourth control signal during the first time period, the fourth control signal being used to control the fourth switching transistor to turn on.

16. A display module, characterized in that, The display module includes a display panel and a display driver integrated circuit; the display driver integrated circuit is coupled to the display panel; The display panel includes the display panel as described in any one of claims 1-13; And / or, The display driver integrated circuit includes the driver integrated circuit as described in claim 14 or 15.

17. An electronic device, characterized in that, The electronic device includes a drive controller and a display module as described in claim 16; the drive controller is coupled to the display module.

18. The electronic device according to claim 17, characterized in that, The electronic device further includes a sensor driver integrated circuit, which is coupled to the display module; The display driver integrated circuit is coupled to one or more of the first control terminal, the second control terminal, the third control terminal, and the second voltage terminal in the optical sensor; the sensor driver integrated circuit is coupled to the first voltage terminal and / or the output terminal in the optical sensor.

19. A display driving method, characterized in that, This device is used to drive an electronic device, which includes a driver integrated circuit and a light sensor; the light sensor includes a first switching transistor, a second switching transistor, a third switching transistor, and a first photosensitive transistor. The display driving method includes: During the first time period, the driving integrated circuit outputs a first control signal, a second control signal, and a first voltage to control the first switching transistor, the second switching transistor, and the first photosensitive transistor to turn on and output a light acquisition signal. During the second time period, the driving integrated circuit outputs a third control signal and a second voltage to control the third switching transistor to turn on and transmit the second voltage to the first photosensitive transistor.

20. The display driving method according to claim 19, characterized in that, The optical sensor also includes a second photosensitive transistor and a fourth switching transistor; The display driving method further includes: During the first time period, the second photosensitive transistor is synchronously turned on; When the optical acquisition signal is greater than a preset value, the driving integrated circuit also outputs a fourth control signal to control the fourth switching transistor to turn on.

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