Light conversion assembly, display panel, display apparatus, and method for manufacturing display panel

Abstract

The present application provides a light conversion assembly, a display panel, a display apparatus, and a method for manufacturing a display panel. The light conversion assembly comprises: a light conversion layer, wherein the light conversion layer comprises a plurality of light conversion units, at least one light conversion unit is configured to emit converted light under the excitation of excitation light, and the excitation light and the converted light have different wavelength ranges; and a light adjustment layer, comprising a first light adjustment layer arranged on one side of at least some of the light conversion units, wherein the reflection wavelength of the first light adjustment layer at least partially overlaps the wavelength range of the converted light of at least some of the light conversion units.

Description

Light conversion component, display panel, display device, and method for manufacturing display panel

[0001] Cross-references to related applications

[0002] This application claims priority to Chinese Patent Application No. 202510099018.X, filed on January 21, 2025, entitled "Light Conversion Component, Display Panel, Display Device and Method of Manufacturing Display Panel", the entire contents of which are incorporated herein by reference. Technical Field

[0003] This application relates to the field of display device technology, and in particular to a light conversion component, a display panel, a display device, and a method for manufacturing the display panel. Background Technology

[0004] Quantum dot (QD) materials have advantages such as high purity of emitted color, adjustable emission wavelength, and material stability, giving them a significant advantage in the pursuit of high color gamut color display.

[0005] QLED (quantum-dot light-emitting diodes) is a new type of light-emitting device. Due to its self-emissive nature (not requiring an external light source), narrow emission peak, tunable emission color, and high luminous efficiency, QLED is gradually becoming one of the mainstream development directions for display technology in the future.

[0006] However, the performance of current display products needs to be improved. Summary of the Invention

[0007] This application provides a light conversion component, a display panel, a display device, and a method for manufacturing a display panel, aiming to improve the performance of the display panel.

[0008] An embodiment of the first aspect of this application provides a light conversion component, including: a light conversion layer, the light conversion layer including a plurality of light conversion units, at least one light conversion unit being configured to emit converted light under the excitation of an excitation light, the excitation light and the converted light having different wavelength ranges; and a light adjustment layer, including a first light adjustment layer disposed on one side of at least some of the light conversion units, the reflected wavelength of the first light adjustment layer at least partially overlapping the wavelength range of the converted light of at least some of the light conversion units.

[0009] According to an embodiment of this application, the light conversion unit includes a first light conversion unit and a second light conversion unit, and a first light adjustment layer is disposed on one side of the first light conversion unit and the second light conversion unit; the first light conversion unit is configured to emit red light under the excitation of excitation light, and the second light conversion unit is configured to emit green light under the excitation of excitation light; wherein the reflection wavelength range of the first light adjustment layer at least partially overlaps with at least one of the red light and the green light.

[0010] According to an embodiment of this application, the first light adjustment layer includes alternating layers of titanium dioxide film and silicon dioxide film.

[0011] According to an embodiment of this application, the first light adjustment layer includes SiN layers with a thickness of 90 nm to 110 nm sequentially disposed along the direction away from the light conversion unit. x Film, SiO2 with a thickness of 80nm to 100nm x SiN film with a thickness of 75nm to 95nm x SiO₂ with a thickness of 80nm to 100nm x SiN film with a thickness of 75nm to 95nm x Film, SiO2 with a thickness of 80nm to 100nm x SiN film with a thickness of 75nm to 95nm x Film, SiO2 with a thickness of 80nm to 100nm x SiN film with a thickness of 75nm to 95nm x Membrane.

[0012] According to embodiments of this application, the materials of the first light conversion unit and the second light conversion unit include quantum dot materials.

[0013] According to embodiments of this application, the light conversion component further includes a third light conversion unit, which is configured to emit blue light under the excitation of an excitation light. A first light adjustment layer is disposed on one side of the first light conversion unit, the second light conversion unit, and the third light conversion unit. The reflection wavelength range of the first light adjustment layer at least partially overlaps with the wavelength range of the converted light of at least one of the first light conversion unit, the second light conversion unit, and the third light conversion unit. Alternatively, the excitation light is blue light, the third light conversion unit is made of a transparent material for transmitting blue light, and the first light adjustment layer is disposed on one side of the first light conversion unit and the second light conversion unit.

[0014] According to the embodiments of this application, the excitation light is blue light, the third light conversion unit is made of transparent material, and the first light adjustment layer is disposed on one side of the first light conversion unit, the second light conversion unit, and the third light conversion unit.

[0015] According to an embodiment of this application, the light adjustment layer further includes a second light adjustment layer, which is disposed on the side of at least a portion of the light conversion units away from the first light adjustment layer, and the reflection wavelength range of the second light adjustment layer at least partially overlaps with the wavelength range of the excitation light.

[0016] According to the embodiments of this application, the light conversion unit includes a first light conversion unit, a second light conversion unit and a third light conversion unit. The third light conversion unit is made of a transparent material and is used to transmit excitation light. The second light adjustment layer is disposed on the side of the first light conversion unit and the second light conversion unit away from the first light adjustment layer.

[0017] According to an embodiment of this application, the excitation light is blue light, and the reflection wavelength range of the second light adjustment layer at least partially overlaps with that of the blue light.

[0018] According to the embodiments of this application, both the first light adjustment layer and the second light adjustment layer include a first Bragg reflection layer; the first Bragg reflection layer includes at least two sets of stacked functional layer groups, each functional layer group including two functional layers, and the refractive indices of adjacent functional layers are different.

[0019] According to the embodiments of this application, the material of the functional layer includes TiO2, SiO2, Al2O3, and SiO2. x and SiN x At least two of them.

[0020] According to the embodiments of this application, the functional layer group includes a first functional layer and a second functional layer stacked together, and the thickness d of the functional layer group satisfies the following relationship: Δf0 / f0=4arcsin[(n2-n1)÷(n2+n1)] / π d=(2k+1)f0÷4

[0021] Where K is a natural number, Δf0 represents the bandwidth of the photonic bandgap, f0 represents the band corresponding to the center frequency band of the photonic bandgap, n1 represents the refractive index of the first functional layer, n2 represents the refractive index of the second functional layer, and d represents the thickness of the functional layer group.

[0022] According to the embodiments of this application, the light conversion component further includes a filter layer, which is disposed on the side of the light conversion layer away from the first light adjustment layer. The filter layer includes a plurality of filter units, and the orthographic projection of each filter unit on the light conversion layer at least partially overlaps with the orthographic projection of each light conversion unit on the light conversion layer.

[0023] According to the embodiments of this application, a light-shielding part is provided between two adjacent filter units.

[0024] According to the embodiments of this application, an isolation section is provided between two adjacent optical conversion units.

[0025] An embodiment of the second aspect of this application also provides a display panel including the light conversion component of any of the embodiments of the first aspect described above.

[0026] According to an embodiment of this application, the display panel includes: a substrate; a light-emitting layer disposed on one side of the substrate, the light-emitting layer being used to emit excitation light in a direction away from the substrate; a light conversion component disposed on the side of the light-emitting layer away from the substrate, and a first light adjustment layer located on the side of the light conversion layer facing the light-emitting layer.

[0027] According to an embodiment of this application, a reflective layer is provided on the light-emitting side of the light-emitting layer, and the reflective layer is located between the first light adjustment layer and the light-emitting layer; the reflective layer is configured to reflect part of the excitation light of the light-emitting layer so that the reflected light and the excitation light interfere constructively.

[0028] According to embodiments of this application, the reflective layer includes at least one of a second Bragg reflective layer, an encapsulation layer, or a light extraction layer.

[0029] According to an embodiment of this application, the reflective layer includes a light extraction layer, a second Bragg reflective layer, and an encapsulation layer disposed sequentially along a direction away from the substrate.

[0030] According to an embodiment of this application, the second Bragg reflector layer includes at least two sets of stacked functional layer groups, each functional layer group including two functional layers, and the refractive indices of adjacent functional layers are different.

[0031] According to the embodiments of this application, the material of the functional layer includes TiO2, SiO2, Al2O3, and SiO2. x and SiN x At least two of them.

[0032] According to the embodiments of this application, the excitation light of the light-emitting layer is blue light, and the second Bragg reflector layer includes SiO₂ layers with a thickness of 95 nm to 115 nm sequentially disposed along the direction away from the light-emitting layer. x SiN film with a thickness of 55nm to 75nm x Film, SiO2 with a thickness of 30nm to 50nm x SiN film with a thickness of 140nm to 160nm x Membrane.

[0033] According to an embodiment of this application, the display panel further includes: a pixel definition layer disposed on one side of the substrate, the pixel definition layer including a pixel defining portion and a pixel opening formed by the pixel defining portion; and an isolation structure disposed on one side of the substrate, the isolation structure forming an isolation opening, the isolation opening and the pixel opening being in communication.

[0034] According to an embodiment of this application, the isolation structure is located on the side of the pixel limiting portion away from the substrate.

[0035] According to an embodiment of this application, the isolation structure includes a first sublayer and a second sublayer, the second sublayer being located on the side of the first sublayer facing away from the substrate, and the orthographic projection of the first sublayer onto the substrate being located within the orthographic projection of the second sublayer onto the substrate.

[0036] According to the embodiments of this application, the light-emitting layer further includes a light-emitting functional layer and a first electrode layer. The light-emitting functional layer is disposed on one side of the substrate and includes a plurality of light-emitting structures disposed in the pixel opening. The first electrode layer includes a first electrode located on the side of each light-emitting structure away from the substrate. The first electrode and the first sub-layer are connected.

[0037] An embodiment of the third aspect of this application also provides a display device, including the display panel in any of the embodiments of the second aspect described above.

[0038] An embodiment of the fourth aspect of this application also provides a method for manufacturing a display panel, comprising:

[0039] A light-emitting layer is formed on one side of the substrate.

[0040] A first light adjustment layer is formed on the side of the light-emitting layer away from the substrate.

[0041] A light conversion layer is formed on the side of the first light adjustment layer away from the light-emitting layer. The light conversion layer includes multiple light conversion units, and at least one light conversion unit is configured to emit converted light under the excitation of excitation light. The excitation light and the converted light have different wavelength ranges.

[0042] The reflected wavelength of the first light adjustment layer at least partially overlaps with the wavelength range of the converted light of at least a portion of the light conversion units.

[0043] In the embodiments of this application, at least one light conversion unit emits converted light under the excitation of an excitation light. The excitation light passes through a first light adjustment layer and enters the light conversion unit. After conversion by the light conversion unit, the converted light is emitted in a direction away from the first light adjustment layer. Some of the converted light is scattered in the direction of the first light adjustment layer, resulting in a loss of some light output. A first light adjustment layer is disposed on the side of the light conversion unit closer to the direction of the excitation light. The reflected wavelength of the first light adjustment layer at least partially overlaps with the wavelength of the converted light, thereby reflecting the converted light scattered in the direction of the first light adjustment layer back into the light conversion unit, thus improving the light output efficiency and enhancing the performance of the display panel. Attached Figure Description

[0044] Figure 1 is a schematic diagram of the structure of a light conversion component provided in an embodiment of this application;

[0045] Figure 2 is a schematic diagram of the structure of a first light adjustment layer provided in an embodiment of this application;

[0046] Figure 3 is a schematic diagram of another optical conversion component provided in an embodiment of this application;

[0047] Figure 4 is a schematic diagram of another first light adjustment layer provided in an embodiment of this application;

[0048] Figure 5 is a schematic diagram of the structure of a display panel provided in an embodiment of this application;

[0049] Figure 6 is a flowchart of a method for manufacturing a display panel according to an embodiment of this application;

[0050] Figures 7 to 9 are schematic diagrams illustrating a manufacturing process of a display panel according to an embodiment of this application. Detailed Implementation

[0051] The features and exemplary embodiments of various aspects of this application will now be described in detail. Numerous specific details are set forth in the following detailed description to provide a comprehensive understanding of this application. However, it will be apparent to those skilled in the art that this application can be implemented without requiring some of these specific details. The following description of embodiments is merely intended to provide a better understanding of this application by illustrating examples. In the accompanying drawings and the following description, at least some well-known structures and techniques are not shown to avoid unnecessarily obscuring the application; and, for clarity, the dimensions of some structures may be exaggerated. Furthermore, the features, structures, or characteristics described below can be combined in any suitable manner in one or more embodiments.

[0052] In the description of this application, it should be noted that, unless otherwise stated, "a plurality of" means two or more; the terms "upper," "lower," "left," "right," "inner," "outer," etc., indicating orientation or positional relationships are only for the convenience of describing this application and simplifying the description, and do not indicate or imply that the device or element referred to must have a specific orientation, or be constructed and operated in a specific orientation, and therefore should not be construed as a limitation on this application. Furthermore, the terms "first," "second," etc., are used for descriptive purposes only and should not be construed as indicating or implying relative importance.

[0053] The directional terms appearing in the following description refer to the directions shown in the figures and are not intended to limit the specific structure of the embodiments of this application. It should also be noted in the description of this application that, unless otherwise explicitly specified and limited, the terms "installation" and "connection" should be interpreted broadly. For example, they can refer to a fixed connection, a detachable connection, or an integral connection; they can refer to a direct connection or an indirect connection. Those skilled in the art can understand the specific meaning of the above terms in this application according to the specific circumstances.

[0054] As shown in Figure 1, a light conversion component provided in the first aspect of this application includes: a light conversion layer 100, which includes a plurality of light conversion units 110, at least one of which is configured to emit converted light under the excitation of an excitation light, wherein the wavelength ranges of the excitation light and the converted light are different; and a light adjustment layer 200, including a first light adjustment layer 210 disposed on one side of at least some of the light conversion units 110, wherein the reflected wavelength of the first light adjustment layer 210 at least partially overlaps with the wavelength range of the converted light of at least some of the light conversion units 110.

[0055] In this embodiment, at least one light conversion unit 110 emits converted light under the excitation of an excitation light. The excitation light is refracted by the first light adjustment layer 210 and then incident on the light conversion unit 110. After conversion by the light conversion unit 110, the converted light is emitted in a direction away from the first light adjustment layer 210. Some of the converted light is scattered in the direction of the first light adjustment layer 210, thus losing some of the emitted light. The first light adjustment layer 210 is disposed on the side of the light conversion unit 110 near the direction of the excitation light. The reflected wavelength of the first light adjustment layer 210 overlaps at least partially with the wavelength of the converted light, thereby reflecting the converted light scattered in the direction of the first light adjustment layer 210 back into the light conversion unit 110, thereby increasing the emitted light and improving the performance of the display panel.

[0056] As shown in FIG1, in some optional embodiments, the light conversion unit 110 includes a first light conversion unit 111 and a second light conversion unit 112, and a first light adjustment layer 210 is disposed on one side of the first light conversion unit 111 and the second light conversion unit 112.

[0057] The first light conversion unit 111 is configured to emit red light when excited by the excitation light, and the second light conversion unit 112 is configured to emit green light when excited by the excitation light.

[0058] The reflection wavelength range of the first light adjustment layer 210 at least partially overlaps with at least one of red light and green light.

[0059] In these optional embodiments, the first light conversion unit 111 emits red light when excited by the excitation light, and the second light conversion unit 112 is configured to emit green light when excited by the excitation light. A first light adjustment layer 210 is disposed on one side of the first light conversion unit 111 and the second light conversion unit 112. The reflection wavelength range of the first light adjustment layer 210 at least partially overlaps with at least one of the red light and the green light, thereby reflecting at least one of the red light and the green light scattered toward the first light adjustment layer 210 back to the light conversion unit 110, thereby improving the light extraction efficiency.

[0060] Optionally, the reflection wavelength range of the first light adjustment layer 210 overlaps with the wavelengths of red and green light, thereby reflecting the red light scattered by the first light conversion unit 111 toward the first light adjustment layer 210 back to the first light conversion unit 111, and reflecting the green light scattered by the second light conversion unit 112 toward the first light adjustment layer 210 back to the second light conversion unit 112, thereby increasing the amount of red and green light emitted by the display panel.

[0061] Optionally, the first light adjustment layer 210 includes alternating layers of titanium dioxide film and silicon dioxide film, so that the reflection wavelength range of the first light adjustment layer 210 overlaps with the wavelengths of red and green light.

[0062] The first light adjustment layer 210 includes a multilayer film structure formed by alternating layers of titanium dioxide film and silicon dioxide film, which has a reflectivity of nearly 100% for red and green light, thereby effectively improving the light emission efficiency of red and green light of the display panel.

[0063] Optionally, as shown in Figure 2, the first light adjustment layer 210 includes SiN layers with a thickness of 90 nm to 110 nm sequentially disposed along the direction away from the light conversion unit 110. x Film, SiO2 with a thickness of 80nm to 100nm x SiN film with a thickness of 75nm to 95nm x SiO₂ with a thickness of 80nm to 100nm x SiN film with a thickness of 75nm to 95nm x Film, SiO2 with a thickness of 80nm to 100nm x SiN film with a thickness of 75nm to 95nm x Film, SiO2 with a thickness of 80nm to 100nm x SiN film with a thickness of 75nm to 95nm x A film layer is applied so that the reflected wavelength range of the first light adjustment layer 210 overlaps with the wavelengths of red and green light.

[0064] In the first light adjustment layer 210, the SiNx film layer with a thickness of 90nm to 110nm can specifically have thicknesses of 90nm, 95nm, 100nm, 105nm, and 110nm, etc. The SiOx film layer with a thickness of 80nm to 100nm can specifically have thicknesses of 80nm, 85nm, 90nm, 95nm, and 100nm, etc. The SiNx film layer with a thickness of 75nm to 95nm can specifically have thicknesses of 75nm, 80nm, 85nm, 90nm, and 95nm, etc. This allows the reflection wavelength range of the first light adjustment layer 210 to overlap with the wavelengths of red and green light, thereby effectively improving the light extraction efficiency of red and green light from the display panel.

[0065] Optionally, as shown in Figure 2, the first light adjustment layer 210 includes SiN layers with a thickness of 100 nm sequentially disposed along the direction away from the light conversion unit 110. x A film, 90 nm thick, of SiO x Film layer, SiN with a thickness of 85nm x SiO₂ with a thickness of 90nm x Film layer, SiN with a thickness of 85nm x A film, 90 nm thick, of SiO x Film layer, SiN with a thickness of 85nm x A film, 90 nm thick, of SiO x Film layer, SiN with a thickness of 85nm x A film layer is applied so that the reflection wavelength range of the first light adjustment layer 210 overlaps with the wavelengths of red and green light. The first light adjustment layer 210 has a reflectivity of approximately 70% for the red and green light scattered by the first light conversion unit 111 and the second light conversion unit 112 toward the first light adjustment layer 210, thereby effectively improving the light extraction efficiency of red and green light from the display panel.

[0066] Optionally, the materials of the first light conversion unit 111 and the second light conversion unit 112 include quantum dot materials.

[0067] As shown in Figure 1, in some optional embodiments, the light conversion component further includes a third light conversion unit 113, which is configured to emit blue light when excited by an excitation light. A first light adjustment layer 210 is disposed on one side of the first light conversion unit 111, the second light conversion unit 112, and the third light conversion unit 113. The reflection wavelength range of the first light adjustment layer 210 at least partially overlaps with the wavelength range of the converted light of at least one of the first light conversion unit 111, the second light conversion unit 112, and the third light conversion unit 113.

[0068] In these optional embodiments, the third light conversion unit 113 emits blue light when excited by the excitation light, and the first light adjustment layer 210 is disposed on one side of the first light conversion unit 111, the second light conversion unit 112 and the third light conversion unit 113. Furthermore, the reflection wavelength range of the first light adjustment layer 210 at least partially overlaps with at least one of the red light, green light and blue light, thereby reflecting at least one of the red light, green light and blue light scattered toward the first light adjustment layer 210 back to the light conversion unit 110, thereby improving the light extraction efficiency.

[0069] Optionally, the reflection wavelength range of the first light adjustment layer 210 overlaps with the wavelengths of red, blue, and green light, thereby reflecting the red light scattered by the first light conversion unit 111 toward the first light adjustment layer 210 back to the first light conversion unit 111, reflecting the green light scattered by the second light conversion unit 112 toward the first light adjustment layer 210 back to the second light conversion unit 112, and reflecting the blue light scattered by the third light conversion unit 113 toward the first light adjustment layer 210 back to the third light conversion unit 113, thereby increasing the amount of red, green, and blue light emitted by the display panel.

[0070] As shown in Figure 3, in some alternative embodiments, the excitation light is blue light, the third light conversion unit 113 is made of transparent material to transmit blue light, and the first light adjustment layer 210 is disposed on one side of the first light conversion unit 111 and the second light conversion unit 112.

[0071] In these optional embodiments, the third light conversion unit 113 is made of a transparent material that allows blue light to pass through. The first light adjustment layer 210 is disposed on one side of the first light conversion unit 111 and the second light conversion unit 112 to reflect red and green light. Optionally, the third light conversion unit 113 and the first light adjustment layer 210 are misaligned, that is, their orthographic projections on the light conversion layer 100 are misaligned, thereby preventing the first light adjustment layer 210 from affecting the amount of blue light entering the third light conversion unit 113. Optionally, a filling layer 212 is disposed on one side of the third light conversion unit 113, and the filling layer 212 is disposed in the same layer as the first light adjustment layer 210 to planarize the first light adjustment layer 210.

[0072] Optionally, as shown in Figure 1, the excitation light is blue light, the third light conversion unit 113 is made of transparent material, and the first light adjustment layer 210 is disposed on one side of the first light conversion unit 111, the second light conversion unit 112, and the third light conversion unit 113. The first light adjustment layer 210 is disposed on one side of the third light conversion unit 113, thereby reflecting the blue light scattered by the transparent material towards the first light adjustment layer 210 back into the third light conversion unit 113, improving the blue light extraction efficiency.

[0073] Optionally, the material of the third light conversion unit 113 includes optical adhesive.

[0074] As shown in FIG1, in some optional embodiments, the light adjustment layer 200 further includes a second light adjustment layer 220, which is disposed on at least a portion of the light conversion unit 110 on the side opposite to the first light adjustment layer 210, and the reflection wavelength range of the second light adjustment layer 220 at least partially overlaps with the wavelength range of the excitation light.

[0075] In these optional embodiments, the excitation light enters the light conversion unit 110 through the first light adjustment layer 210 and is emitted from the second light adjustment layer 220. Part of the excitation light will not be converted in the light conversion unit 110. The unconverted excitation light passes through the second light adjustment layer 220. The reflection wavelength range of the second light adjustment layer 220 overlaps at least partially with the wavelength range of the excitation light, thereby reflecting the unconverted excitation light back to the light conversion unit 110 for light conversion to form converted light, thereby improving the light conversion efficiency.

[0076] As shown in Figure 1, in some optional embodiments, the light conversion unit 110 includes a first light conversion unit 111, a second light conversion unit 112 and a third light conversion unit 113. The third light conversion unit 113 is made of a transparent material and is used to transmit excitation light. The second light adjustment layer 220 is disposed on the side of the first light conversion unit 111 and the second light conversion unit 112 away from the first light adjustment layer 210.

[0077] In these optional embodiments, the second light adjustment layer 220 is disposed on the side of the first light conversion unit 111 and the second light conversion unit 112 opposite to the first light adjustment layer 210, thereby reflecting the unconverted excitation light from the first light conversion unit 111 and the second light conversion unit 112 back to the first light conversion unit 111 and the second light conversion unit 112 for light conversion to form converted light. The third light conversion unit 113 is made of a transparent material to transmit excitation light, and the second light adjustment layer 220 is not disposed on the side of the third light conversion unit 113 opposite to the first light adjustment layer 210. That is, the orthographic projection of the second light adjustment layer 220 on the first light adjustment layer 210 does not overlap with the orthographic projection of the third light conversion unit 113 on the first light adjustment layer 210, thus avoiding reflection of the excitation light transmitted by the third light conversion unit 113.

[0078] Optionally, the excitation light can be blue light, and the reflection wavelength range of the second light adjustment layer 220 at least partially overlaps with the blue light, thereby reflecting the unconverted blue light back to the first light conversion unit 111 and the second light conversion unit 112.

[0079] As shown in Figures 1 and 4, in some optional embodiments, both the first light adjustment layer 210 and the second light adjustment layer 220 include a first Bragg reflection layer; the first Bragg reflection layer includes at least two sets of stacked functional layer groups 211, each functional layer group 211 including two functional layers, and the refractive indices of adjacent functional layers are different.

[0080] In these optional embodiments, the first Bragg reflector layer includes at least two sets of stacked functional layer groups 211, each functional layer group 211 including two functional layers, for example, each functional layer group 211 including a first functional layer 211a and a second functional layer 211b. That is, the first Bragg reflector layer includes at least four stacked functional layers, and adjacent functional layers have different refractive indices. The four functional layers form a set of photonic crystals to reflect light of a preset wavelength, satisfying the requirements of the Bragg reflector principle.

[0081] Optionally, the first Bragg reflector layer is composed of alternating layers of high-refractive-index functional layers and low-refractive-index functional layers.

[0082] Optionally, the high-refractive-index material has a refractive index greater than or equal to 2.0, and the low-refractive-index material has a refractive index of approximately 1.4. The functional layer can be deposited by sputtering deposition, physical vapor deposition, chemical vapor deposition, ion beam deposition, molecular beam epitaxy, or similar methods.

[0083] Optionally, the material of the functional layer includes TiO2, SiO2, Al2O3, SiO x and SiN x At least two of them.

[0084] As shown in Figures 1 and 4, in some optional embodiments, the functional layer group 211 includes a first functional layer 211a and a second functional layer 211b stacked together. The thickness d of the functional layer group 211 satisfies the following relationship: Δf0 / f0=4arcsin[(n2-n1)÷(n2+n1)] / π d=(2k+1)f0÷4

[0085] K is a natural number, Δf0 represents the bandwidth of the photonic bandgap, f0 represents the band corresponding to the center frequency band of the photonic bandgap, n1 represents the refractive index of the first functional layer 211a, n2 represents the refractive index of the second functional layer 211b, and d represents the thickness of the functional layer group 211.

[0086] In these alternative embodiments, the refractive index of the first Bragg reflector can be determined by selecting the materials of the first functional layer 211a and the second functional layer 211b, and the thickness of the functional layer group 211 can be selected to adjust the reflection wavelength range of the first Bragg reflector.

[0087] As shown in Figure 1, in some optional embodiments, the light conversion component further includes a filter layer 300, which is disposed on the side of the light conversion layer 100 away from the first light adjustment layer 210. The filter layer 300 includes a plurality of filter units 310, and the orthographic projection of each filter unit 310 on the light conversion layer 100 at least partially overlaps with the orthographic projection of each light conversion unit 110 on the light conversion layer 100.

[0088] In these optional embodiments, the filter unit 310 is used to transmit light within a certain wavelength range and block light within other wavelength ranges, thereby achieving a filtering effect. The wavelength range of light that can be transmitted by each filter unit 310 overlaps with the wavelength range of light converted by each light conversion unit 110, thereby allowing the converted light to pass through while blocking light within other wavelength ranges.

[0089] Optionally, the third light conversion unit 113 is made of transparent material to allow the excitation light to pass through, and the transmittable wavelength range of the filter unit 310 corresponding to the third light conversion unit 113 overlaps with the wavelength of the excitation light.

[0090] Optionally, as shown in Figure 1, a light-shielding part 320 is provided between two adjacent filter units 310; the light-shielding part 320 isolates each filter unit 310 from each other to improve the light crosstalk problem.

[0091] Optionally, as shown in Figure 1, an isolation section 120 is provided between two adjacent optical conversion units 110. The isolation section 120 isolates each optical conversion unit 110 from each other to improve the problem of light crosstalk.

[0092] The second aspect of this application also provides a display panel including the light conversion component of any of the first aspect embodiments described above. Since the display panel provided in the second aspect of this application includes the light conversion component of any of the first aspect embodiments described above, it possesses the beneficial effects of the light conversion component of any of the first aspect embodiments described above, which will not be elaborated further here.

[0093] As shown in Figure 5, in some optional embodiments, the display panel includes: a substrate 400; a light-emitting layer 500 disposed on one side of the substrate 400, the light-emitting layer 500 being used to emit excitation light along a direction away from the substrate 400; a light conversion component disposed on the side of the light-emitting layer 500 away from the substrate 400; and a first light adjustment layer 210 located on the side of the light conversion layer 100 facing the light-emitting layer 500.

[0094] In these optional embodiments, the first light adjustment layer 210 is located on the side of the light conversion layer 100 facing the light-emitting layer 500. Excitation light enters each light conversion unit 110 through the first light adjustment layer 210, and at least one light conversion unit 110 emits converted light under the excitation light. The converted light is emitted in a direction away from the first light adjustment layer 210. Some of the converted light is scattered in the direction of the first light adjustment layer 210, thus losing some of the emitted light. By providing the first light adjustment layer 210 on the side of the light conversion unit 110 facing the light-emitting layer 500, the reflected wavelength of the first light adjustment layer 210 at least partially overlaps with the wavelength of the converted light, thereby reflecting the converted light scattered in the direction of the first light adjustment layer 210 back into the light conversion unit 110, thereby improving the light extraction efficiency and improving the performance of the display panel.

[0095] As shown in Figure 5, in some optional embodiments, a reflective layer 600 is provided on the light-emitting side of the light-emitting layer 500, and the reflective layer 600 is located between the first light adjustment layer 210 and the light-emitting layer 500; the reflective layer 600 is configured to reflect part of the excitation light of the light-emitting layer 500 so that the reflected light and the excitation light interfere constructively.

[0096] In these alternative embodiments, the excitation light from the light-emitting layer 500 is directed toward the reflective layer 600, and the reflective layer 600 reflects part of the excitation light back to the light-emitting layer 500. The reflected light and the excitation light form a superposition of waves to achieve constructive interference, thereby enhancing the light efficiency.

[0097] Optionally, as shown in FIG5, the reflective layer 600 includes at least one of a second Bragg reflective layer 620, an encapsulation layer 630, or a light extraction layer 610.

[0098] The second Bragg reflector layer 620, the encapsulation layer 630, or the light extraction layer 610 can all reflect part of the excitation light, and the reflector layer 600 can be at least one of the second Bragg reflector layer 620, the encapsulation layer 630, or the light extraction layer 610.

[0099] Optionally, the light extraction layer 610 may include a first refractive layer and a second refractive layer stacked sequentially along a direction away from the light-emitting layer 500, wherein the refractive index of the first refractive layer is greater than the refractive index of the second refractive layer.

[0100] Optionally, as shown in FIG5, the reflective layer 600 includes a light extraction layer 610, a second Bragg reflective layer 620 and an encapsulation layer 630 arranged sequentially along the direction away from the substrate 400.

[0101] In some alternative embodiments, the second Bragg reflector 620 includes at least two sets of stacked functional layer groups 211, each functional layer group 211 including two functional layers, with adjacent functional layers having different refractive indices.

[0102] In these optional embodiments, the second Bragg reflector layer 620 includes at least four stacked functional layers, and adjacent functional layers have different refractive indices. The four functional layers form a set of photonic crystals to reflect light of a preset wavelength, satisfying the requirements of the Bragg reflector principle.

[0103] Optionally, the material of the functional layer includes TiO2, SiO2, Al2O3, SiO x and SiN x At least two of them.

[0104] Optionally, the excitation light of the light-emitting layer 500 is blue light, and the second Bragg reflector layer 620 includes SiO₂ layers with a thickness of 95 nm to 115 nm sequentially disposed along the direction away from the light-emitting layer 500.x SiN film with a thickness of 55nm to 75nm x Film, SiO2 with a thickness of 30nm to 50nm x SiN film with a thickness of 140nm to 160nm x A film layer is formed so that the second Bragg reflector layer 620 reflects at least part of the blue light, and the reflected light interferes constructively with the excitation light of the emitting layer 500.

[0105] In the second Bragg reflector layer 620, the SiOx film with a thickness of 95nm to 115nm can have specific thicknesses of 95nm, 100nm, 105nm, 110nm, and 115nm. The SiNx film with a thickness of 55nm to 75nm can have specific thicknesses of 55nm, 60nm, 65nm, 70nm, and 75nm. The SiOx film with a thickness of 30nm to 50nm can have specific thicknesses of 30nm, 35nm, 40nm, 45nm, and 50nm. The SiNx film with a thickness of 140nm to 160nm can have specific thicknesses of 140nm, 145nm, 150nm, 1555nm, and 160nm.

[0106] Optionally, the excitation light of the light-emitting layer 500 is blue light, and the second Bragg reflector layer 620 includes SiO₂ layers with a thickness of 105 nm sequentially disposed along the direction away from the light-emitting layer 500. x A 65nm thick SiN film x A film, 40 nm thick, of SiO x A 150nm thick SiN film x A film layer is applied to the second Bragg reflector layer 620 to reflect at least a portion of the blue light. This causes the reflected light to interfere constructively with the excitation light of the light-emitting layer 500, thereby enhancing the light emission intensity of the display panel.

[0107] As shown in Figure 5, in some optional embodiments, the display panel further includes: a pixel definition layer 510 disposed on one side of the substrate 400, the pixel definition layer 510 including a pixel defining portion 511 and a pixel opening formed by the pixel defining portion 511; and an isolation structure 530 disposed on one side of the substrate 400, the isolation structure 530 forming an isolation opening, the isolation opening being connected to the pixel opening.

[0108] In these optional embodiments, the isolation structure 530 encloses and forms multiple isolation openings, which are connected to the pixel openings. When the light-emitting functional layer material is applied to the entire surface, the light-emitting functional layer material falls into the openings formed by the isolation openings and the pixel openings. After removing the light-emitting functional layer material outside the target isolation opening, a light-emitting structure 520 is formed in each isolation opening. The isolation structure 530 can reduce the light emission crosstalk problem between adjacent light-emitting structures 520.

[0109] Optionally, as shown in FIG5, the isolation structure 530 is located on the side of the pixel limiting portion 511 away from the substrate 400. That is, the pixel limiting portion 511 is first formed on one side of the substrate 400, and the isolation structure 530 is formed on the side of the pixel limiting portion 511 away from the substrate 400.

[0110] Optionally, as shown in FIG5, the isolation structure 530 includes a first sub-layer 531 and a second sub-layer 532. The second sub-layer 532 is located on the side of the first sub-layer 531 away from the substrate 400, and the orthographic projection of the first sub-layer 531 on the substrate 400 is located within the orthographic projection of the second sub-layer 532 on the substrate 400.

[0111] The orthographic projection size of the first sublayer 531 onto the substrate 400 is smaller than that of the second sublayer 532 onto the substrate 400, thus forming a recess beneath the second sublayer 532. During the fabrication of the light-emitting structure 520, the material of the light-emitting functional layer can be separated into independent light-emitting structures 520 by the isolation structure 530, eliminating the need for a precision mask evaporation process and reducing fabrication costs.

[0112] Optionally, as shown in Figure 5, the light-emitting layer 500 further includes a light-emitting functional layer and a first electrode layer. The light-emitting functional layer is disposed on one side of the substrate 400 and includes a plurality of light-emitting structures 520 disposed in the pixel opening. The first electrode layer includes a first electrode 540 located on the side of each light-emitting structure 520 away from the substrate 400. The first electrode 540 is connected to the first sub-layer 531.

[0113] The first electrode layer is used to drive and control whether the light-emitting structure 520 in the light-emitting functional layer emits light. Due to the presence of the isolation structure 530, the first electrode layer can also form multiple first electrodes 540 located in multiple isolation openings without the need for a fine metal mask, thereby reducing the manufacturing cost of the display panel. The first electrodes 540 are electrically connected to the first sub-layer 531, so that each first electrode 540 in each isolation opening can be conductive through the first sub-layer 531.

[0114] Optionally, as shown in Figure 5, the first electrode 540 is a cathode layer, and the light-emitting layer 500 also includes a second electrode 550 on the side of each light-emitting structure 520 facing the substrate 400, and the second electrode 550 is an anode.

[0115] An embodiment of the third aspect of this application also provides a display device, including the display panel of any of the second aspect embodiments described above. Since the display device provided by the third aspect embodiment includes the display panel of any of the second aspect embodiments described above, the display device provided by the third aspect embodiment has the beneficial effects of the display panel of any of the second aspect embodiments described above, which will not be elaborated further here.

[0116] The display devices in this application include, but are not limited to, mobile phones, personal digital assistants (PDAs), tablet computers, e-books, televisions, access control systems, smart landline phones, control consoles, and other devices with display functions.

[0117] An embodiment of the fourth aspect of this application also provides a method for manufacturing a display panel, as shown in FIG6, comprising the following steps:

[0118] Step S01: As shown in Figure 7, a light-emitting layer 500 is formed on one side of the substrate 400.

[0119] Step S02: As shown in Figure 8, a first light adjustment layer 210 is formed on the side of the light-emitting layer 500 away from the substrate 400.

[0120] Step S03: As shown in FIG9, a light conversion layer 100 is formed on the side of the first light adjustment layer 210 away from the light emission layer 500. The light conversion layer 100 includes a plurality of light conversion units 110. At least one light conversion unit 110 is configured to emit converted light under the excitation of excitation light. The wavelength ranges of the excitation light and the converted light are different. The reflection wavelength of the first light adjustment layer 210 overlaps at least partially with the wavelength range of the converted light of at least a portion of the light conversion units 110.

[0121] In these optional embodiments, the first light adjustment layer 210 is located on the side of the light conversion layer 100 facing the light-emitting layer 500. Excitation light enters each light conversion unit 110 through the first light adjustment layer 210, and at least one light conversion unit 110 emits converted light under the excitation light. The converted light is emitted in a direction away from the first light adjustment layer 210. Some of the converted light is scattered in the direction of the first light adjustment layer 210, thus losing some of the emitted light. By providing the first light adjustment layer 210 on the side of the light conversion unit 110 facing the light-emitting layer 500, the reflected wavelength of the first light adjustment layer 210 at least partially overlaps with the wavelength of the converted light, thereby reflecting the converted light scattered in the direction of the first light adjustment layer 210 back into the light conversion unit 110, thereby improving the light extraction efficiency and improving the performance of the display panel.

[0122] Optionally, step S02 further includes: as shown in Figures 4 and 5, forming at least two sets of stacked functional layer groups 211 on the side of the light-emitting layer 500 facing away from the substrate 400, each functional layer group 211 including two functional layers. The four functional layers form a set of photonic crystals to reflect light of a preset wavelength, satisfying the requirements of the Bragg reflector principle.

[0123] Optionally, step S02 further includes: as shown in Figures 4 and 5, alternatingly stacking a first functional layer 211a and a second functional layer 211b on the side of the light-emitting layer 500 facing away from the substrate 400, wherein the first functional layer 211a and the second functional layer 211b have different refractive indices.

[0124] Optionally, after step S03, as shown in Figure 6, the method further includes:

[0125] Step S04: As shown in FIG5, a filter layer 300 is formed on the side of the light conversion layer 100 away from the substrate 400. The filter layer 300 includes a plurality of filter units 310.

[0126] Optionally, before step S04, the method further includes: as shown in FIG5, forming a second light adjustment layer 220 on the side of the light conversion layer 100 away from the substrate 400, the second light adjustment layer 220 being disposed on at least a portion of the light conversion unit 110 away from the first light adjustment layer 210, and the reflection wavelength range of the second light adjustment layer 220 at least partially overlapping with the wavelength range of the excitation light.

[0127] In these optional embodiments, the excitation light enters the light conversion unit 110 through the first light adjustment layer 210 and is emitted from the second light adjustment layer 220. Part of the excitation light will not be converted in the light conversion unit 110. The unconverted excitation light passes through the second light adjustment layer 220. The reflection wavelength range of the second light adjustment layer 220 overlaps at least partially with the wavelength range of the excitation light, thereby reflecting the unconverted excitation light back to the light conversion unit 110 for light conversion to form converted light, thereby improving the light conversion efficiency.

[0128] Optionally, as shown in Figure 5, the light conversion unit 110 includes a first light conversion unit 111, a second light conversion unit 112 and a third light conversion unit 113. The third light conversion unit 113 is made of transparent material and is used to transmit excitation light. The second light adjustment layer 220 is disposed on the side of the first light conversion unit 111 and the second light conversion unit 112 away from the first light adjustment layer 210.

[0129] In these optional embodiments, the second light adjustment layer 220 is disposed on the side of the first light conversion unit 111 and the second light conversion unit 112 opposite to the first light adjustment layer 210, thereby reflecting the unconverted excitation light from the first light conversion unit 111 and the second light conversion unit 112 back to the first light conversion unit 111 and the second light conversion unit 112 for light conversion to form converted light. The third light conversion unit 113 is made of transparent material to transmit excitation light. The second light adjustment layer 220 is not disposed on the side of the third light conversion unit 110 opposite to the first light adjustment layer 210, meaning that the orthographic projection of the second light adjustment layer 220 on the first light adjustment layer 210 does not overlap with the orthographic projection of the third light conversion unit 113 on the first light adjustment layer 210, thus avoiding reflection of the excitation light transmitted by the third light conversion unit 113.

[0130] Although this application has been described with reference to preferred embodiments, various modifications can be made thereto and components can be replaced with equivalents without departing from the scope of this application. In particular, the technical features mentioned in the various embodiments can be combined in any manner, provided there is no structural conflict. This application is not limited to the specific embodiments disclosed herein, but includes all technical solutions falling within the scope of the claims.

Claims

1. A light conversion component, comprising: A light conversion layer comprising a plurality of light conversion units, at least one of the light conversion units being configured to emit converted light upon excitation by an excitation light, wherein the excitation light and the converted light have different wavelength ranges; The light adjustment layer includes a first light adjustment layer disposed on at least a portion of the light conversion unit side, wherein the reflected wavelength of the first light adjustment layer at least partially overlaps with the wavelength range of the converted light of at least a portion of the light conversion unit.

2. The optical conversion component according to claim 1, wherein, The optical conversion unit includes a first optical conversion unit and a second optical conversion unit, and the first optical adjustment layer is disposed on one side of the first optical conversion unit and the second optical conversion unit; The first light conversion unit is configured to emit red light when excited by the excitation light, and the second light conversion unit is configured to emit green light when excited by the excitation light; The reflection wavelength range of the first light adjustment layer at least partially overlaps with at least one of the red light and the green light.

3. The optical conversion component according to claim 2, wherein, The first light adjustment layer includes alternating layers of titanium dioxide film and silicon dioxide film.

4. The optical conversion component according to claim 2, wherein, The first light adjustment layer includes SiN layers with a thickness of 90 nm to 110 nm sequentially disposed along the direction away from the light conversion unit. x Film, SiO2 with a thickness of 80nm to 100nm x SiN film with a thickness of 75nm to 95nm x SiO₂ with a thickness of 80nm to 100nm x SiN film with a thickness of 75nm to 95nm x Film, SiO2 with a thickness of 80nm to 100nm x SiN film with a thickness of 75nm to 95nm x Film, SiO2 with a thickness of 80nm to 100nm x SiN film with a thickness of 75nm to 95nm x Membrane.

5. The optical conversion component according to claim 2, wherein, The materials of the first light conversion unit and the second light conversion unit include quantum dot materials.

6. The optical conversion component according to claim 2, wherein, The light conversion component further includes a third light conversion unit, which is configured to emit blue light under the excitation of the excitation light. The first light adjustment layer is disposed on one side of the first light conversion unit, the second light conversion unit, and the third light conversion unit. The reflection wavelength range of the first light adjustment layer at least partially overlaps with the wavelength range of the converted light of at least one of the first light conversion unit, the second light conversion unit, and the third light conversion unit. Alternatively, the excitation light is blue light, the third light conversion unit is made of a transparent material to allow the blue light to pass through, and the first light adjustment layer is disposed on one side of the first light conversion unit and the second light conversion unit.

7. The optical conversion component according to claim 1, wherein, The light adjustment layer further includes a second light adjustment layer, which is disposed on at least a portion of the light conversion units on the side opposite to the first light adjustment layer, and the reflection wavelength range of the second light adjustment layer at least partially overlaps with the wavelength range of the excitation light. The light conversion unit includes a first light conversion unit, a second light conversion unit, and a third light conversion unit. The third light conversion unit is made of a transparent material and is used to transmit the excitation light. The second light adjustment layer is disposed on the side of the first light conversion unit and the second light conversion unit away from the first light adjustment layer.

8. The optical conversion component according to claim 7, wherein, The excitation light is blue light, and the reflection wavelength range of the second light adjustment layer at least partially overlaps with that of the blue light.

9. The optical conversion component according to claim 7, wherein, Both the first light adjustment layer and the second light adjustment layer include a first Bragg reflector layer; The first Bragg reflector layer includes at least two sets of stacked functional layers, each of which includes two functional layers, and the refractive indices of adjacent functional layers are different.

10. The optical conversion component according to claim 9, wherein, The materials of the functional layer include TiO2, SiO2, Al2O3, and SiO2. x and SiN x At least two of them; The functional layer group includes a first functional layer and a second functional layer stacked together, and the thickness d of the functional layer group satisfies the following relationship: △f0 / f0=4arcsin[(n2-n1)÷(n2+n1)] / π d=(2k+1)f0÷4 Where K is a natural number, Δf0 represents the bandwidth of the photonic bandgap, f0 represents the band corresponding to the center frequency band of the photonic bandgap, n1 represents the refractive index of the first functional layer, n2 represents the refractive index of the second functional layer, and d represents the thickness of the functional layer group.

11. The optical conversion component according to claim 1, wherein, The light conversion component further includes a filter layer disposed on the side of the light conversion layer opposite to the first light adjustment layer. The filter layer includes a plurality of filter units, and the orthographic projection of each filter unit on the light conversion layer at least partially overlaps with the orthographic projection of each light conversion unit on the light conversion layer.

12. The optical conversion component according to claim 11, wherein, A light-shielding part is provided between two adjacent filter units; an isolation part is provided between two adjacent light conversion units.

13. A display panel, wherein, Includes the light conversion component as described in any one of claims 1-12.

14. The display panel according to claim 13, wherein, The display panel also includes: substrate; A light-emitting layer is disposed on one side of the substrate, and the light-emitting layer is used to emit the excitation light in a direction away from the substrate; The light conversion component is disposed on the side of the light-emitting layer away from the substrate, and the first light adjustment layer is located on the side of the light conversion layer facing the light-emitting layer.

15. The display panel according to claim 14, wherein, A reflective layer is provided on the light-emitting side of the light-emitting layer, and the reflective layer is located between the first light adjustment layer and the light-emitting layer; the reflective layer is configured to reflect a portion of the excitation light from the light-emitting layer so that the reflected light and the excitation light interfere constructively.

16. The display panel according to claim 15, wherein, The reflective layer includes at least one of a second Bragg reflective layer, an encapsulation layer, or a light extraction layer.

17. The display panel according to claim 16, wherein, The second Bragg reflector layer includes at least two sets of stacked functional layer groups, each of which includes two functional layers, and the refractive indices of adjacent functional layers are different. The materials of the functional layer include TiO2, SiO2, Al2O3, and SiO2. x and SiN x At least two of them; The excitation light of the light-emitting layer is blue light, and the second Bragg reflector layer comprises SiO₂ layers with a thickness of 95 nm to 115 nm sequentially arranged along the direction away from the light-emitting layer. x SiN film with a thickness of 55nm to 75nm x Film, SiO2 with a thickness of 30nm to 50nm x SiN film with a thickness of 140nm to 160nm x Membrane.

18. The display panel according to claim 14, wherein, The display panel also includes: A pixel definition layer is disposed on one side of the substrate, the pixel definition layer including a pixel defining portion and a pixel opening formed by the pixel defining portion; An isolation structure is disposed on one side of the substrate, the isolation structure encloses an isolation opening, and the isolation opening is connected to the pixel opening; The isolation structure is located on the side of the pixel defining portion opposite to the substrate; The isolation structure includes a first sublayer and a second sublayer, the second sublayer being located on the side of the first sublayer facing away from the substrate, and the orthographic projection of the first sublayer onto the substrate being located within the orthographic projection of the second sublayer onto the substrate. The light-emitting layer further includes a light-emitting functional layer and a first electrode layer. The light-emitting functional layer is disposed on one side of the substrate and includes a plurality of light-emitting structures disposed within the pixel opening. The first electrode layer includes a first electrode located on the side of each light-emitting structure facing away from the substrate. The first electrode is connected to the first sub-layer.

19. A display device, wherein, Includes the display panel as described in any one of claims 13-18.

20. A method for manufacturing a display panel, wherein, include: A light-emitting layer is formed on one side of the substrate; A first light adjustment layer is formed on the side of the light-emitting layer opposite to the substrate; A light conversion layer is formed on the side of the first light adjustment layer away from the light-emitting layer. The light conversion layer includes a plurality of light conversion units, and at least one of the light conversion units is configured to emit converted light under the excitation of an excitation light. The excitation light and the converted light have different wavelength ranges. The reflected wavelength of the first light adjustment layer at least partially overlaps with the wavelength range of the converted light of at least a portion of the light conversion unit.

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