Semiconductor heat-treatment apparatus

Abstract

The present application discloses a semiconductor heat-treatment apparatus. The disclosed semiconductor heat-treatment apparatus comprises an inner process pipe, an outer process pipe, a mounting base, a gas inlet structure, and a gas discharge structure. Both first end of the inner process pipe and a second end of the inner process pipe are open structures, and a reaction space is formed in an area defined by the inner process pipe. A first end of the outer process pipe is an open structure, a second end of the outer process pipe is a closed structure, the outer process pipe is sleeved over the inner process pipe, and an annular gas inlet cavity is formed between the inner process pipe and the outer process pipe. The mounting base is of an annular structure, and the first end of the inner process pipe and the first end of the outer process pipe are both sealingly connected to the mounting base. A gap is formed between the second end of the inner process pipe and the inner wall of the second end of the outer process pipe. The air inlet structure is communicated with the annular gas inlet cavity through a gas inlet. The solution can solve the problem in the related art of insufficient contact between a process gas and a process material when a semiconductor heat-treatment apparatus performs a process on the process material.

Description

Semiconductor heat treatment equipment TECHNICAL FIELD

[0001] The present application relates to the technical field of semiconductor technology, and in particular to a semiconductor heat treatment equipment. BACKGROUND

[0002] In the preparation process of semiconductor devices, multiple heat treatment processes may be involved, such as carbon removal process after synthesis of SiC powder, powder sintering process, SiC annealing process, etc. These processes need to be carried out in a semiconductor heat treatment equipment for corresponding heat treatment to ensure the quality and performance of the materials.

[0003] With the increasing demand for the performance of semiconductor devices, the heat treatment process requires more and more sufficient contact of the process gas with the process material (for example, semiconductor sheet). Specifically, the process gas needs to flow through the process material as evenly as possible to ensure sufficient contact between the process gas and the process material in the flow state, so as to achieve good process effect. The current heat treatment process has the problems of uneven gas distribution and insufficient contact when the process gas enters and flows through the process material, which leads to unstable process effect and ultimately affects the quality and performance of the product. SUMMARY

[0004] The present application discloses a semiconductor heat treatment equipment to solve the problem of insufficient contact between process gas and process material in the related art semiconductor heat treatment equipment when processing the process material.

[0005] To solve the above technical problems, the present application is implemented as follows:

[0006] The present application discloses a semiconductor heat treatment equipment, comprising a process inner tube, a process outer tube, a mounting seat, a gas inlet structure and a gas outlet structure; wherein:

[0007] The first end of the process inner tube and the second end of the process inner tube are both open structures, and the area defined by the process inner tube forms a reaction space;

[0008] The first end of the process outer tube is an open structure, and the second end of the process outer tube is a closed structure, the process outer tube is sleeved outside the process inner tube, and an annular gas inlet cavity is formed between the process inner tube and the process outer tube;

[0009] The mounting seat is an annular structure, the first end of the process inner tube and the first end of the process outer tube are both sealingly connected with the mounting seat, and there is a gap between the second end of the process inner tube and the inner wall of the second end of the process outer tube;

[0010] The ring-shaped air inlet cavity has an air inlet at one end close to the mounting base, the air inlet structure is in communication with the ring-shaped air inlet cavity through the air inlet, the air inlet structure is used for providing process gas into the reaction space through the ring-shaped air inlet cavity, and the exhaust structure is in communication with the reaction space.

[0011] The technical scheme adopted in the application can achieve the following technical effects:

[0012] The semiconductor heat treatment equipment disclosed by the embodiment of the application sets the first end of the process inner tube and the second end of the process inner tube as open structures, sets the first end of the process outer tube as an open structure, and sets the second end of the process outer tube as a closed structure, so that the process outer tube is sleeved outside the process inner tube, the first end of the process inner tube and the first end of the process outer tube are in sealed connection with the mounting base, and there is a gap between the second end of the process inner tube and the inner wall of the second end of the process outer tube, so that the process gas is filled into the ring-shaped air inlet cavity when the air inlet structure passes through the air inlet to introduce the process gas into the ring-shaped air inlet cavity from the side close to the mounting base, the process gas in the ring-shaped air inlet cavity enters the reaction space along the circumference of the ring-shaped air inlet cavity from the gap between the second end of the process inner tube and the inner wall of the second end of the process outer tube, so that the process gas uniformly enters the reaction space in the circumferential direction of the reaction space, so that the process gas can uniformly flow through the process material in the process inner tube, and then the process material is fully contacted with the process gas, so that the process effect can be improved, and the quality and performance of the product can be improved. BRIEF DESCRIPTION OF DRAWINGS

[0013] FIG. 1 is a structural schematic diagram of the semiconductor heat treatment equipment disclosed by the embodiment of the application;

[0014] FIG. 2 is a partially enlarged schematic diagram of the semiconductor heat treatment equipment disclosed by the embodiment of the application;

[0015] FIG. 3 is a partially enlarged schematic diagram of the mounting base disclosed by the embodiment of the application.

[0016] Explanation of reference signs: A-carrier boat, 100-process inner tube, 101-reaction space, 102-annular gas inlet cavity, 102a-gas inlet, 200-process outer tube, 210-annular flange, 300-mounting seat, 301-first gas inlet channel, 302-annular flow uniformizing channel, 303-second gas inlet channel, 304-cooling channel, 310-first seat body, 311-first annular protrusion, 320-second seat body, 321-first annular side part, 322-first annular bottom part, 323-annular inner side flange, 330-third seat body, 331-second annular side part, 332-second annular bottom part, 332a-second annular protrusion, 401-second cooling channel, 410-lower furnace body, 411-exhaust channel, 420-furnace cover, 430-support column, 440-tray, 450-heat insulation member, 510-sealing ring, 521-first gasket ring, 522-second gasket ring, 523-third gasket ring, 531-first protective spacer sleeve, 532-second protective spacer sleeve, 610-heat preservation member, 611-annular heat preservation sub-member, 612-top heat preservation sub-member, 620-heating member, 630-upper furnace body, 700-cooling member. DETAILED DESCRIPTION

[0017] In order to make the objects, technical solutions and advantages of the present application clearer, the technical solutions of the present application will be described clearly and completely below in conjunction with the embodiments of the present application and corresponding drawings. Obviously, the described embodiments are only some of the embodiments of the present application, but not all the embodiments. Based on the embodiments in the present application, all other embodiments obtained by those skilled in the art without creative work fall within the scope of protection of the present application.

[0018] The technical solutions disclosed by the various embodiments of the present application will be described in detail below in conjunction with the drawings.

[0019] Please refer to FIGS. 1 to 3, the embodiments of the present application disclose a semiconductor heat treatment equipment, the disclosed semiconductor heat treatment equipment comprises a process inner tube 100, a process outer tube 200, a mounting seat 300, a gas inlet structure and an exhaust structure.

[0020] The first end of the process inner tube 100 and the second end of the process inner tube 100 are both open structures, and the area defined by the process inner tube 100 forms a reaction space 101, and process materials can perform relevant processes in the reaction space 101, and the process materials can be carried in and out of the reaction space 101 by a carrier boat.

[0021] The first end of the process outer tube 200 is an open structure, and the second end of the process outer tube 200 is a closed structure. The process outer tube 200 is sleeved outside the process inner tube 100, and an annular gas inlet cavity 102 is formed between the process inner tube 100 and the process outer tube 200.

[0022] The mounting base 300 has an annular structure. The first ends of both the inner process tube 100 and the outer process tube 200 are sealed to the mounting base 300. The central axes of both the inner and outer process tubes can be parallel or coincident with the central axis of the mounting base 300. A gap exists between the inner walls of the second ends of the inner and outer process tubes. The reaction space 101 can communicate with the annular air inlet chamber 102 through the gap between the inner walls of the second ends of the inner and outer process tubes.

[0023] The annular air intake chamber 102 has an air inlet 102a at one end near the mounting base 300. The air intake structure is connected to the annular air intake chamber 102 through the air inlet 102a. The air intake structure is used to provide process gas to the reaction space 101 through the annular air intake chamber 102. The exhaust structure is connected to the reaction space 101.

[0024] During the process of processing the process material located in the reaction space 101, the gas inlet structure can introduce process gas into the annular gas inlet chamber 102 from the side near the mounting base 300 through the gas inlet 102a. The gas entering the annular gas inlet chamber 102 enters the reaction space 101 from the gap between the inner wall of the second end of the inner process tube 100 and the second end of the outer process tube 200 (i.e., the top of the inner process tube 100 in Figure 1), thereby contacting and reacting with the process material located in the reaction space 101. The exhaust gas generated during the process in the reaction space 101 can be discharged outside the semiconductor heat treatment equipment through the exhaust structure.

[0025] The semiconductor heat treatment apparatus disclosed in this application configures both the first and second ends of the inner process tube 100 as open structures, and the first end of the outer process tube 200 as an open structure, while the second end of the outer process tube 200 is a closed structure. This allows the outer process tube 200 to be fitted outside the inner process tube 100. Both the first ends of the inner and outer process tubes are sealed to the mounting base 300, and a gap exists between the inner walls of the second ends of the inner and outer process tubes. This allows air to enter through the air inlet 102a near the mounting base 300. Process gas is introduced into the annular inlet chamber 102 from one side, filling the chamber. The process gas then enters the reaction space 101 circumferentially through the gap between the inner wall of the second end of the inner process tube 100 and the second end of the outer process tube 200. This allows the process gas to enter the reaction space 101 evenly in the circumferential direction, ensuring that it flows uniformly through the process material located in the inner process tube 100. This allows the process material to fully contact the process gas, thereby improving the process effect and ultimately enhancing the quality and performance of the product.

[0026] In some embodiments, the air intake structure may include a first air intake channel 301, an annular flow equalization channel 302, and a plurality of second air intake channels 303 formed in the mounting base 300. The first air intake channel 301 may be connected to a process gas source and may be used to receive process gas. The annular flow equalization channel 302 is arranged circumferentially along the mounting base 300. The first air intake channel 301 may communicate with the annular flow equalization channel 302, and the annular flow equalization channel 302 may be communicated with the air inlet 102a through the plurality of second air intake channels 303, and the plurality of second air intake channels 303 may be arranged at intervals circumferentially along the annular flow equalization channel 302.

[0027] This embodiment of the application sets the air intake structure to include a first air intake channel 301 opened in the mounting base 300, an annular uniform flow channel 302 and a plurality of second air intake channels 303, so that the process gas can enter the annular uniform flow channel 302 from the first air intake channel 301, and enter the annular uniform flow channel 302 circumferentially from the plurality of second air intake channels 303 at the air intake port 102a, thereby making the process gas more evenly distributed in the annular uniform flow channel 302 circumferentially when it enters the annular uniform flow channel 302.

[0028] The mounting base 300 can have various structural forms; for example, it can be a one-piece structure. To facilitate the installation of the mounting base 300 with components such as the inner process tube 100 and the outer process tube 200, in some embodiments, the mounting base 300 may include a first base 310, a second base 320, and a third base 330 stacked sequentially along its central axis. The first base 310, the second base 320, and the third base 330 can all be annular structures. The third base 330 may be located on the side of the second base 320 facing away from the outer process tube 200. The first base 310, the second base 320, and the third base 330 can be detachably connected using bolts or other components.

[0029] The first end of the outer process tube 200 may have an outwardly bent annular flange 210, which can be sealed and clamped between the first base 310 and the second base 320. The first end of the inner process tube 100 may be sealed and connected to the third base 330. The first air intake channel 301 and the annular flow equalization channel 302 may both be opened in the third base 330, and the second air intake channel 303 may be opened in the second base 320.

[0030] The semiconductor heat treatment apparatus disclosed in this application configures the mounting base 300 as comprising a first base 310, a second base 320, and a third base 330 stacked sequentially. This allows the annular flange 210 at the open end of the outer process tube 200 to be sealed and clamped between the first base 310 and the second base 320, and the first end of the inner process tube 100 to be sealed and connected to the third base 330, thereby facilitating the installation of the inner process tube 100 and the outer process tube 200. By opening the first air intake channel 301 and the annular uniform flow channel 302 on the third base 330, and the second air intake channel 303 on the second base 320, the second air intake channel 303 is located on a different component than the first air intake channel 301 and the annular uniform flow channel 302, thereby improving the strength of the second base 320 and the third base 330.

[0031] In practice, the first base 310, the second base 320 and the third base 330 can all be made of metal, such as stainless steel.

[0032] In some embodiments, the first seat 310 may have a first annular protrusion 311 facing the second seat 320. The second seat 320 may include a first annular side portion 321 and a first annular bottom portion 322, with the first annular side portion 321 surrounding the outer periphery of the first annular bottom portion 322. The first annular protrusion 311 may extend into the first annular side portion 321 along a side away from the first annular bottom portion 322, and the outer diameter of the first annular protrusion 311 is adapted to the inner diameter of the first annular side portion 321. The edge of the first seat 310 surrounding the first annular protrusion 311 may overlap the end of the first annular side portion 321, and an annular flange 210 may extend into the space enclosed by the first annular protrusion 311, the first annular side portion 321, and the first annular bottom portion 322, and the annular flange 210 may be sealed and clamped between the annular protrusion 311 and the first annular bottom portion 322.

[0033] The semiconductor heat treatment apparatus disclosed in this application configures the first base 310 with a first annular protrusion 311 and the second base 320 with a first annular side portion 321 and a first annular bottom portion 322, wherein the first annular side portion 321 is disposed around the outer periphery of the first annular bottom portion 322. The outer diameter of the first annular protrusion 311 is configured to match the inner diameter of the first annular side portion 321, allowing the first annular protrusion 311 to extend into the first annular side portion 321 from the side away from the first annular bottom portion 322. Because the first annular protrusion 311 extends into the first annular side portion 321 and its outer diameter matches the inner diameter of the first annular side portion 321, the installation of the first base 310 and the second base 320 is more stable. By extending the annular flange 210 into the space enclosed by the first annular protrusion 311, the first annular side portion 321, and the first annular bottom portion 322, the stability of the process outer tube 200 installation is improved. By sealing and clamping the annular folded edge 210 between the first annular protrusion 311 and the first annular bottom 322, and with the first annular protrusion 311 extending into the first annular side portion 321, the structure in which the edge of the first seat 310 surrounding the first annular protrusion 311 overlaps the end of the first annular side portion 321, a labyrinth seal structure can be formed between the first seat 310 and the second seat 320, thereby improving the sealing performance between the first seat 310 and the second seat 320.

[0034] Specifically, sealing rings 510 can be provided between the first annular protrusion 311 and the annular folded edge 210, and between the first annular bottom 322 and the annular folded edge 210, so that the annular folded edge 210 can be better sealed between the annular protrusion 311 and the first annular bottom 322.

[0035] Furthermore, the semiconductor heat treatment equipment may also include a first washer ring 521, a second washer ring 522, and a first protective spacer 531. The first washer ring 521 may be disposed between the first annular protrusion 311 and the annular folded edge 210, the second washer ring 522 may be disposed between the bottom 322 of the first annulus and the annular folded edge 210, and the first protective spacer 531 may be disposed between the side portion 321 of the first annulus and the annular folded edge 210. The first washer ring 521 and the second washer ring 522 may be components with a cushioning effect, such as elastic washer rings.

[0036] The semiconductor heat treatment equipment disclosed in this application provides a first gasket 521, a second gasket 522, and a first protective sleeve 531. The first gasket 521 can buffer between the first annular protrusion 311 and the annular folded edge 210, and the second gasket 522 can buffer between the first annular bottom 322 and the annular folded edge 210. This avoids rigid contact between the first annular protrusion 311 and the annular folded edge 210, and between the first annular bottom 322 and the annular folded edge 210, thereby protecting the first seat 310 and the second seat 320. The first protective sleeve 531 can protect the outer wall of the process inner tube 100.

[0037] Specifically, the first annular bottom 322 may have a sealing ring mounting groove and a gasket mounting groove. The sealing ring 510 located between the first annular bottom 322 and the annular folded edge 210 may be located in the sealing ring mounting groove, and the second gasket 522 may be located in the gasket mounting groove. This not only makes the installation of the sealing ring 510 and the second gasket 522 located in the sealing ring mounting groove more stable, but also, after the sealing ring 510 located in the sealing ring mounting groove and the second gasket 522 located in the gasket mounting groove are compressed and deformed, the annular folded edge 210 can be supported on the upper surface of the first annular bottom 322. Thus, while ensuring good sealing between the annular folded edge 210 and the first annular bottom 322, and good buffering effect between the annular folded edge 210 and the first annular bottom 322, it also makes the installation of the annular folded edge 210 and the first annular bottom 322 more stable.

[0038] In order to make the process gas enter the annular air intake chamber 102 more smoothly from the second air intake channel 303, in some embodiments, the second seat 320 may also have an annular inner flange 323. The annular inner flange 323 may be located inside the bottom of the first annular 322 and may be opposite to the air intake port 102a. The second air intake channel 303 may be opened on the annular inner flange 323.

[0039] The semiconductor heat treatment apparatus disclosed in this application provides an inner annular flange 323 on the inner side of the first annular bottom 322, so that the inner annular flange 323 can extend to the inner side of the first annular bottom 322 to a position opposite to the air inlet 102a. This allows the second air inlet channel 303 to be opened on the inner annular flange 323, so that when the second air inlet channel 303 delivers process gas to the annular air inlet cavity 102, the process gas will not be blocked and can directly and smoothly enter the annular air inlet cavity 102.

[0040] In some embodiments, the third seat 330 may include a second annular side portion 331 and a second annular bottom portion 332. The second annular side portion 331 may be circumferentially disposed on the outer periphery of the second annular bottom portion 332, and the end of the second annular side portion 331 may be sealed to the second seat 320. The second annular bottom portion 332 may be located on the side of the second annular side portion 331 away from the second seat 320. The end face of the first end of the process inner tube 100 may be supported on the second annular bottom portion 332, and the outer wall of the process inner tube 100 may be sealed to the inner wall of the second annular side portion 331. The first air intake channel 301 and the annular flow equalization channel 302 may both be formed in the second annular side portion 331.

[0041] The semiconductor heat treatment apparatus disclosed in this application configures the third base 330 with a structure including a second annular side portion 331 and a second annular bottom portion 332, such that the second annular side portion 331 is arranged around the outer periphery of the second annular bottom portion 332, thereby allowing the end face (i.e., the nozzle end) of the process inner tube 100 to be supported on the second annular bottom portion 332, thus making the installation of the process inner tube 100 more stable. By sealing the outer wall of the process inner tube 100 with the inner wall of the second annular side portion 331, the process inner tube 100 and the third base 330 can have a larger sealing contact area when sealed, compared to sealing between the end face (i.e., the nozzle end) of the process inner tube 100 and the second annular bottom portion 332. This is beneficial to improving the sealing performance between the process inner tube 100 and the third base 330, and can also avoid the sealing ring 510 being squeezed by the gravity of the process inner tube 100, thereby avoiding the sealing ring 510 being damaged by excessive compression.

[0042] Specifically, the end of the second annular side 331 and the second seat 320, as well as the outer wall of the process inner tube 100 and the inner wall of the second annular side 331, can be sealed by setting a sealing ring 510. One of the end of the second annular side 331 and the second seat 320 can be provided with a groove to install the sealing ring 510.

[0043] The semiconductor heat treatment equipment may further include a third gasket 523 and a second protective spacer 532. The bottom 332 of the second annulus may have a first mounting groove, and the third gasket 523 may be disposed within the first mounting groove. The end face (i.e., the nozzle end) of the process inner tube 100 may be supported by the third gasket 523, and the second protective spacer 532 may be disposed between the outer wall of the process inner tube 100 and the inner wall of the second annulus side portion 331. The third gasket 523 may be a component with a cushioning effect, such as an elastic gasket.

[0044] The semiconductor heat treatment apparatus disclosed in this application provides a third gasket 523, which supports the first end face of the inner process tube 100. This prevents rigid contact between the first end face of the inner process tube 100 and the bottom 332 of the second annulus, thereby protecting the inner process tube 100. A second protective sleeve 532 is provided between the outer wall of the inner process tube 100 and the inner wall of the second annulus side 331, providing circumferential protection for the inner process tube 100.

[0045] To prevent the sealing ring 510 from being damaged by excessively high temperatures in the first seat 310, second seat 320, and third seat 330, in some embodiments, at least one of the first seat 310, second seat 320, and third seat 330 is provided with a cooling channel 304. For example, the first seat 310, second seat 320, and third seat 330 may all be provided with a cooling channel 304. The cooling channel 304 can cool the corresponding first seat 310, second seat 320, and third seat 330 by introducing a cooling medium. The cooling channel 304 in the first seat 310 may be located at the position corresponding to the first annular protrusion 311, the cooling channel 304 in the second seat 320 may be located at the bottom 322 of the first annulus, and the cooling channel 304 in the third seat 330 may be located at the side 331 of the second annulus. The cooling channels 304 opened in the first seat 310, the second seat 320 and the third seat 330 can be set adjacent to the corresponding sealing rings 510.

[0046] The semiconductor heat treatment apparatus disclosed in this application opens cooling channels 304 in the first seat 310, the second seat 320, and the third seat 330, allowing a cooling medium to pass through the cooling channels 304. This allows the first seat 310, the second seat 320, and the third seat 330 to be cooled, thereby preventing the sealing ring 510 from being damaged due to excessively high temperatures in the first seat 310, the second seat 320, and the third seat 330.

[0047] In order to make the process gas distribution in the annular uniform flow channel 302 more uniform, in some embodiments, there can be multiple first air inlet channels 301. Multiple first air inlet channels 301 can be evenly arranged along the circumference of the mounting base 300, so that when the process gas is delivered into the annular uniform flow channel 302 through multiple first air inlet channels 301, it is beneficial to the uniformity of gas distribution in the annular uniform flow channel 302.

[0048] In some embodiments, the semiconductor heat treatment equipment may further include a lower furnace body 410 and a furnace cover 420. The lower furnace body 410 may be an annular structure. The first end of the lower furnace body 410 may be sealed to the side of the mounting base 300 away from the process inner tube 100. The second end of the lower furnace body 410 may be connected to the furnace cover 420. The exhaust structure may include an exhaust channel 411 opened in the lower furnace body 410. The exhaust channel 411 may be connected to the reaction space 101.

[0049] The semiconductor heat treatment equipment disclosed in this application provides a lower furnace body 410 and a furnace cover 420, such that the first end of the lower furnace body 410 is sealed to the side of the mounting base 300 away from the process inner tube 100, and the second end of the lower furnace body 410 is connected to the furnace cover 420. The lower furnace body 410 and the furnace cover 420 can seal the reaction space 101 and the annular air inlet chamber 102 so that the process environment of the reaction space 101 meets the process requirements.

[0050] In order to prevent the lower furnace body 410 from overheating, in some embodiments, the lower furnace body 410 may be provided with a second cooling channel 401. By introducing a cooling medium into the second cooling channel 401, the lower furnace body 410 can be cooled down.

[0051] In the case where the mounting base 300 includes a first base body 310, a second base body 320, and a third base body 330 stacked sequentially along its central axis, the first end of the lower furnace body 410 can be sealed to the third base body 330. A sealing ring 510 can be provided between the third base body 330 and the lower furnace body 410. A sealing ring mounting groove can be provided on either the first end of the lower furnace body 410 or the third base body 330. The sealing ring 510 located between the third base body 330 and the lower furnace body 410 can be placed in the sealing ring mounting groove, thereby making the installation of the sealing ring 510 more stable. By introducing a cooling medium into the second cooling channel 401 to cool the lower furnace body 410, overheating of the lower furnace body 410 can be avoided, which could damage the sealing ring 510.

[0052] In some embodiments, when the mounting base 300 includes a first base 310, a second base 320, and a third base 330 stacked sequentially along its central axis, and the third base 330 includes a second annular side 331 and a second annular bottom 332, a second annular protrusion 332a may be provided on the side of the second annular bottom 332 facing away from the second base 320, and a groove may be provided at the first end of the lower furnace body 410, and the second annular protrusion 332a may be embedded in the groove, so that the installation of the third base 330 and the lower furnace body 410 is more stable.

[0053] In some embodiments, the semiconductor heat treatment apparatus may further include an upper furnace body 630, a heat insulation element 610, and a heating element 620. The heat insulation element 610 may be covered outside the process outer tube 200, the upper furnace body 630 may be covered outside the heat insulation element 610, the heat insulation element 610 may be connected to the upper furnace body 630, and the heating element 620 may be disposed on the inner wall of the heat insulation element 610 and may be arranged around the process outer tube 200.

[0054] The semiconductor heat treatment equipment disclosed in this application comprises an upper furnace body 630, a heat insulation component 610, and a heating component 620. The heat insulation component 610 is covered outside the process outer tube 200, the upper furnace body 630 is covered outside the heat insulation component 610, and the heating component 620 is disposed on the inner wall of the heat insulation component 610 and surrounds the process outer tube 200. This allows for the heating and heat preservation of the process gas entering the reaction space 101 and the annular inlet chamber 102. Since the process gas enters the reaction space 101 through the annular inlet chamber 102, which surrounds the outside of the reaction space 101, the process gas is already heated upon entering the reaction space 101. This improves the uniformity of temperature distribution within the reaction space 101. Furthermore, the process gas is continuously heated during its journey through the annular inlet chamber 102 into the reaction space 101, effectively increasing the heating time of the process gas within the reaction space 101 and thus improving the heating efficiency of the gas within the reaction space 101.

[0055] Specifically, the insulation component 610 may include multiple annular insulation sub-components 611 and a top insulation sub-component 612. The multiple annular insulation sub-components 611 may be sleeved outside the process outer tube 200 and are sequentially and detachably connected along the extension direction of the central axis of the process inner tube 100. The top insulation sub-component 612 may be connected to the annular insulation sub-components 611 and is located on the side where the second end of the process outer tube 200 is located. The inner sidewalls of the multiple annular insulation sub-components 611 may be provided with heating elements 620.

[0056] The semiconductor heat treatment apparatus disclosed in this application configures the insulation element 610 as including multiple annular insulation sub-elements 611 and a top insulation sub-element 612, such that the multiple annular insulation sub-elements 611 correspond to multiple heating elements 620, and the multiple heating elements 620 can be independently temperature controlled, thereby facilitating the adjustment of temperature uniformity within the process inner tube 100. The multiple annular insulation sub-elements 611 are detachably sleeved outside the process outer tube 200, which facilitates the installation and removal of the multiple annular insulation sub-elements 611.

[0057] In some embodiments, the semiconductor heat treatment apparatus may further include a support column 430, a tray 440, and a heat insulation element 450. A first end of the support column 430 may be connected to a furnace cover 420, and a second end of the support column 430 may extend downwards into the furnace body 410 along the central axis of the process inner tube 100. The tray 440 may be disposed at the second end of the support column 430, and the heat insulation element 450 may be disposed on the tray 440. The furnace cover 420 can drive the heat insulation element 450 in and out of the process inner tube 100 via the support column 430 and the tray 440. Process materials can be disposed on the heat insulation element 450, thereby driving the process materials in and out of the process inner tube 100.

[0058] As the temperature of the semiconductor heat treatment process increases, the temperature of the outer surface of the upper furnace body 630 also increases. In order to prevent the temperature of the outer surface of the upper furnace body 630 from being too high and thus hindering the operation of the semiconductor heat treatment equipment, in some embodiments, the semiconductor heat treatment equipment may also include a cooling element 700. The cooling element 700 may be arranged around the outer side of the upper furnace body 630, thereby cooling the outer surface of the upper furnace body 630 to avoid the problem of the outer surface temperature of the upper furnace body 630 being too high and thus hindering the operation of the semiconductor heat treatment equipment.

[0059] It should be noted that the material of the gasket in the embodiments of this application can be polytetrafluoroethylene. Of course, the gasket can also be other materials with cushioning effect. The embodiments of this application do not impose specific restrictions on the material of the gasket.

[0060] The above embodiments of this application focus on describing the differences between the various embodiments. As long as the different optimization features between the various embodiments are not contradictory, they can be combined to form a better embodiment. For the sake of brevity, they will not be described in detail here.

[0061] The embodiments of this application have been described above with reference to the accompanying drawings. However, this application is not limited to the specific embodiments described above. The specific embodiments described above are merely illustrative and not restrictive. Those skilled in the art can make many other forms under the guidance of this application without departing from the spirit and scope of the claims, and all of these forms are within the protection scope of this application.

Claims

1. A semiconductor heat treatment apparatus, characterized in that, It includes an inner process tube (100), an outer process tube (200), a mounting base (300), an intake structure, and an exhaust structure; wherein: The first end and the second end of the process inner tube (100) are both open structures, and the area defined by the process inner tube (100) forms a reaction space (101); The first end of the outer process tube (200) is an open structure, the second end of the outer process tube (200) is a closed structure, the outer process tube (200) is sleeved outside the inner process tube (100), and an annular air intake chamber (102) is formed between the inner process tube (100) and the outer process tube (200). The mounting base (300) has an annular structure. The first end of the inner process tube (100) and the first end of the outer process tube (200) are both sealed to the mounting base (300). There is a gap between the second end of the inner process tube (100) and the inner wall of the second end of the outer process tube (200). The annular air intake chamber (102) has an air inlet (102a) at one end near the mounting base (300). The air intake structure is connected to the annular air intake chamber (102) through the air inlet (102a). The air intake structure is used to provide process gas to the reaction space (101) through the annular air intake chamber (102). The exhaust structure is connected to the reaction space (101).

2. The semiconductor heat treatment equipment according to claim 1, characterized in that, The air intake structure includes a first air intake channel (301), an annular flow equalization channel (302), and a plurality of second air intake channels (303) opened in the mounting base (300); The first air intake channel (301) is used to receive the process gas. The annular flow equalization channel (302) is arranged along the circumference of the mounting base (300). The first air intake channel (301) is connected to the annular flow equalization channel (302). The annular flow equalization channel (302) is connected to the air inlet (102a) through a plurality of second air intake channels (303), and the plurality of second air intake channels (303) are arranged at intervals along the circumference of the annular flow equalization channel (302).

3. The semiconductor heat treatment equipment according to claim 2, characterized in that, The mounting base (300) includes a first base (310), a second base (320), and a third base (330) stacked sequentially along its central axis. The first base (310), the second base (320), and the third base (330) are all annular structures. The first end of the process outer tube (200) has an outwardly bent annular flange (210), which is sealed and clamped between the first base (310) and the second base (320). The first end of the process inner tube (100) is sealed and connected to the third base (330). The first air intake channel (301) and the annular flow equalization channel (302) are both opened in the third base (330), and the second air intake channel (303) is opened in the second base (320).

4. The semiconductor heat treatment equipment according to claim 3, characterized in that, The first seat (310) has a first annular protrusion (311) facing the second seat (320), and the second seat (320) includes a first annular side (321) and a first annular bottom (322), wherein the first annular side (321) is disposed around the outer periphery of the first annular bottom (322); The first annular protrusion (311) extends into the first annular side portion (321) along the side away from the first annular bottom (322), and the outer diameter of the first annular protrusion (311) is adapted to the inner diameter of the first annular side portion (321). The edge of the first seat (310) surrounding the first annular protrusion (311) overlaps the end of the first annular side portion (321). The annular fold (210) extends into the space enclosed by the first annular protrusion (311), the first annular side portion (321), and the first annular bottom (322), and the annular fold (210) is sealed and clamped between the annular protrusion (311) and the first annular bottom (322).

5. The semiconductor heat treatment equipment according to claim 4, characterized in that, The semiconductor heat treatment equipment further includes a first gasket (521), a second gasket (522), and a first protective spacer (531). The first gasket (521) is disposed between the first annular protrusion (311) and the annular fold (210). The second gasket (522) is disposed between the bottom of the first annular part (322) and the annular fold (210). The first protective spacer (531) is disposed between the first annular side part (321) and the annular fold (210).

6. The semiconductor heat treatment apparatus according to claim 4, characterized in that, The second seat (320) also has an annular inner flange (323), which is located inside the bottom of the first annular ring (322). The annular inner flange (323) is opposite to the air inlet (102a), and the second air intake channel (303) is opened on the annular inner flange (323).

7. The semiconductor heat treatment equipment according to claim 3, characterized in that, The third seat (330) includes a second annular side (331) and a second annular bottom (332). The second annular side (331) is arranged around the outer periphery of the second annular bottom (332). The end of the second annular side (331) is sealed to the second seat (320). The second annular bottom (332) is located on the side of the second annular side (331) away from the second seat (320). The end face of the first end of the process inner tube (100) is supported on the second annular bottom (332), and the outer wall of the process inner tube (100) is sealed to the inner wall of the second annular side (331). The first air intake channel (301) and the annular flow equalization channel (302) are both opened in the second annular side (331).

8. The semiconductor heat treatment apparatus according to claim 7, characterized in that, The semiconductor heat treatment equipment further includes a third gasket (523) and a second protective sleeve (532). The bottom of the second annular part (332) has a first mounting groove. The third gasket (523) is disposed in the first mounting groove. The end face of the first end of the process inner tube (100) is supported by the third gasket (523). The second protective sleeve (532) is disposed between the outer wall of the process inner tube (100) and the inner wall of the second annular side (331).

9. The semiconductor heat treatment equipment according to claim 3, characterized in that, At least one of the first seat (310), the second seat (320) and the third seat (330) is provided with a first cooling channel (304).

10. The semiconductor heat treatment apparatus according to claim 2, characterized in that, There are multiple first air intake channels (301), and the multiple first air intake channels (301) are evenly arranged along the circumference of the mounting base (300).

11. The semiconductor heat treatment apparatus according to claim 1, characterized in that, The semiconductor heat treatment equipment further includes a lower furnace body (410) and a furnace cover (420). The lower furnace body (410) has an annular structure. The first end of the lower furnace body (410) is sealed to the side of the mounting base (300) opposite to the process inner tube (100). The second end of the lower furnace body (410) is connected to the furnace cover (420). The exhaust structure includes an exhaust channel (411) opened in the lower furnace body (410). The exhaust channel (411) is connected to the reaction space (101).

12. The semiconductor heat treatment apparatus according to claim 1, characterized in that, The semiconductor heat treatment equipment further includes an upper furnace body (630), a heat insulation component (610), and a heating component (620). The heat insulation component (610) is covered outside the process outer tube (200), and the upper furnace body (630) is covered outside the heat insulation component (610). The heat insulation component (610) is connected to the upper furnace body (630), and the heating component (620) is disposed on the inner wall of the heat insulation component (610) and surrounds the process outer tube (200).

13. The semiconductor heat treatment apparatus according to claim 12, characterized in that, The insulation component (610) includes multiple annular insulation sub-components (611) and a top insulation sub-component (612). The multiple annular insulation sub-components (611) are sleeved outside the process outer tube (200) and are sequentially and detachably connected along the extension direction of the central axis of the process outer tube (200). The top insulation sub-component (612) is connected to the annular insulation sub-components (611) and is located on the side where the second end of the process outer tube (200) is located. The heating element (620) is correspondingly provided on the inner sidewall of each of the multiple annular insulation sub-components (611).

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