Semiconductor process device

Abstract

The present application relates to the technical field of semiconductor processing, and discloses a semiconductor process device. The disclosed semiconductor process device comprises a furnace tube and a furnace door. An opening is formed at an end portion of the furnace tube. The furnace door comprises an inner furnace door and an outer furnace door, and a first cavity is formed between the inner furnace door and the outer furnace door. During a process, the inner furnace door seals the opening, and the first cavity is communicated with the furnace tube. The first cavity is filled with an inert gas, wherein the pressure of the inert gas is greater than the pressure of a process gas in the furnace tube, such that a portion of the inert gas enters the furnace tube via the inner furnace door to form an isolation region at the end portion. The described solution can solve the problem of a short service life of the semiconductor process device involved in the related art.

Description

Semiconductor process equipment Technical Field

[0001] This application belongs to the field of semiconductor processing technology, specifically relating to a semiconductor process equipment. Background Technology

[0002] In semiconductor manufacturing processes, semiconductor process equipment is typically used to process wafers. Specifically, reactive gases are introduced into the furnace tube of the semiconductor process equipment, and the reactive gases are heated by heating the furnace tube, thereby processing the wafers placed inside the furnace tube. The furnace tube is usually sealed or opened using a furnace door, which consists of an inner furnace door and an outer furnace door connected together. The inner furnace door can overlap the end face of the furnace tube. The drive mechanism of the semiconductor process equipment drives the outer furnace door, which in turn drives the inner furnace door to seal or open the furnace tube.

[0003] During the actual wafer processing, the aforementioned reactive gases react with the wafer to generate high-temperature reactants. These reactants diffuse to the end faces of the furnace door and furnace tubes, specifically to the contact points. This can easily lead to eutectic melting at the contact points, causing the furnace door to stick to the furnace tubes. Since both the furnace door and furnace tubes are typically made of quartz, they are relatively brittle. Therefore, separating the stuck furnace door and furnace tubes can easily damage them, thus affecting their service life.

[0004] In summary, the semiconductor process equipment involved in the relevant technologies has a relatively short lifespan. Summary of the Invention

[0005] This application discloses a semiconductor process equipment to solve the problem of short service life of semiconductor process equipment involved in related technologies.

[0006] To solve the above-mentioned technical problems, this application adopts the following technical solution:

[0007] A semiconductor process apparatus, comprising a furnace tube and a furnace door,

[0008] The furnace tube has an opening at its end.

[0009] The furnace door includes an inner furnace door and an outer furnace door, and a first cavity is formed between the inner furnace door and the outer furnace door;

[0010] During the process, the inner furnace door seals the opening, and the first cavity is connected to the furnace tube. The first cavity is filled with inert gas, wherein the pressure of the inert gas is greater than the pressure of the process gas in the furnace tube, so that part of the inert gas enters the furnace tube through the inner furnace door to form an isolation area at the end.

[0011] The technical solution adopted in this application can achieve the following beneficial effects:

[0012] In this application, a first cavity can be formed between the inner furnace door and the outer furnace door. During the process, i.e., when the inner furnace door blocks the furnace tube opening, the first cavity can be connected to the furnace tube, and the first cavity can be filled with inert gas. Since the pressure of the inert gas is greater than the pressure of the process gas inside the furnace tube, i.e., the pressure inside the first cavity is greater than the pressure inside the furnace tube, some inert gas can enter the furnace tube through the inner furnace door to form an isolation area at the end. This isolation area can prevent the reactants inside the furnace tube from diffusing between the inner furnace door and the furnace tube. This can prevent the inner furnace door from sticking to the furnace tube, and thus make it easier to separate the inner furnace door and the furnace tube. In other words, this arrangement can avoid affecting the service life of the inner furnace door and the furnace tube. Therefore, the semiconductor process equipment disclosed in this application can solve the problem of short service life of semiconductor process equipment involved in related technologies. Attached Figure Description

[0013] Figure 1 is a cross-sectional view of the semiconductor process equipment disclosed in an embodiment of this application;

[0014] Figure 2 is an enlarged view of point A in Figure 1;

[0015] Figures 3 and 4 are schematic diagrams of the furnace tube structure from different perspectives in the embodiments of this application;

[0016] Figure 5 is a schematic diagram of the structure of the inner furnace door disclosed in an embodiment of this application;

[0017] Figure 6 is a cross-sectional view of the inner furnace door disclosed in an embodiment of this application;

[0018] Figures 7 and 8 are schematic diagrams of the elastic buffer assembly from different perspectives in the embodiments of this application;

[0019] Figure 9 is a structural schematic diagram of the outer furnace door disclosed in an embodiment of this application;

[0020] Figure 10 is a cross-sectional view of the elastic buffer component disclosed in the embodiment of this application;

[0021] Figure 11 is a schematic diagram of the flow direction of the inert gas in the first cavity and the connecting groove disclosed in the embodiments of this application;

[0022] Figure 12 is an enlarged view of point B in Figure 11.

[0023] Explanation of reference numerals in the attached drawings: 100-furnace tube, 110-end, 111-opening, 112-inner annular surface, 113-outer annular surface, 114-receiving groove, 115-reinforcing part, 120-isolation area, 130-thickened part, 131-connecting groove, 140-second air inlet, 150-exhaust port, 160-annular flange; 200-furnace door, 210-inner furnace door, 211-protrusion, 212-second cavity, 213-first heat insulation component, 214-airflow groove, 215-limiting groove, 216-limiting protrusion, 217-transition groove, 220-outer furnace door, 221-first air inlet, 230-annular mounting component; 310-first cavity, 320-first gap; 400-first sealing component; 500-Elastic buffer assembly, 510-Base, 511-Annular connector, 512-Center hole, 513-Annular reinforcement, 520-Elastic blade, 530-First buffer component, 540-Connecting rod, 550-Second buffer component, 560-Limiting boss, 570-Fixing component; 610-Spacer ring, 620-Fixing flange. Detailed Implementation

[0024] To make the objectives, technical solutions, and advantages of this application clearer, the technical solutions in the embodiments of this application will be clearly and completely described below with reference to the accompanying drawings. Obviously, the described embodiments are only some embodiments of this application, not all embodiments. Based on the embodiments in this application, all other embodiments obtained by those skilled in the art without creative effort are within the scope of protection of this application.

[0025] The semiconductor process equipment disclosed in this application will be described in detail below with reference to the accompanying drawings, through specific embodiments and application scenarios.

[0026] Please refer to Figures 1-12. This application discloses a semiconductor process equipment, which includes a furnace tube 100 and a furnace door 200.

[0027] The furnace tube 100 is the specific location for processing wafers in a semiconductor process equipment. The furnace door 200 can cooperate with the furnace tube 100 to form a process chamber for processing wafers. The end 110 of the furnace tube 100 has an opening 111, which can be used to transfer wafers. The furnace door 200 specifically cooperates with this opening 111; that is, the furnace door 200 seals the opening 111, thereby forming a process chamber for processing wafers with the furnace tube 100. The furnace door 200 may specifically include an inner furnace door 210 and an outer furnace door 220 connected together, forming a first cavity 310 between the inner furnace door 210 and the outer furnace door 220. In some embodiments, the furnace tube 100 can be made of quartz, the inner furnace door 210 can also be made of quartz, and the outer furnace door 220 can be made of metal.

[0028] During the process, specifically when the furnace door 200 seals the opening 111 of the furnace tube 100, or more specifically when the inner furnace door 210 seals the opening 111, the first cavity 310 is connected to the inner cavity of the furnace tube 100. The first cavity 310 is filled with an inert gas, the pressure of which is greater than the pressure of the process gas inside the furnace tube 100. This allows some of the inert gas to enter the furnace tube 100 through the inner furnace door 210, forming an isolation region 120 at the end 110. The isolation region 120 prevents the reactants and process gas inside the furnace tube 100 from diffusing between the inner furnace door 210 and the furnace tube 100, thus preventing the inner furnace door 210 from sticking to the furnace tube 100 and making it easier to separate the inner furnace door 210 and the furnace tube 100. This arrangement avoids affecting the service life of the inner furnace door 210 and the furnace tube 100. Therefore, the semiconductor process equipment disclosed in this application can solve the problem of short service life of semiconductor process equipment involved in related technologies.

[0029] In some embodiments, the ends 110 of the furnace tube 100 may be two opposite ends 110 of the furnace tube 100. Correspondingly, the openings 111 of the furnace tube 100 may also be two opposite openings 111. In this case, there may be two furnace doors 200 to block different openings 111 respectively, thereby forming isolation areas 120 at different ends 110 of the furnace tube 100, and each isolation area 120 is close to the corresponding end 110 and furnace door 200.

[0030] In another embodiment, since only one opening 111 needs to be provided on the furnace tube 100 to meet the conventional wafer transfer requirements, one of the two ends 110 of the furnace tube 100 can be an open end with an opening 111. This open end can cooperate with the furnace door 200. The other end 110 of the furnace tube 100 can always be a closed end, specifically by being sealed by an arc-shaped sealing plate. That is, the furnace tube 100 and the arc-shaped sealing plate can be integrally set. In this case, the longitudinal section of the furnace tube 100 is generally U-shaped, which can simplify the structural complexity of semiconductor process equipment.

[0031] In this embodiment, the arc-shaped sealing plate may be provided with a second air inlet 140 and an exhaust outlet 150 spaced apart. The process gas can enter the inner cavity of the furnace tube 100 through the second air inlet 140 and react with the wafer at high temperature, thereby achieving the purpose of wafer processing. The final reactants can be drawn away from the exhaust outlet 150, forming a gas circulation. The process gas may specifically include various process gases such as BCl3, N2, O2, and H2O. The pressure of the process gas can be between 10 mbar and 1000 mbar, and the process temperature can be between 600℃ and 1100℃. This configuration is applicable to high-temperature boron diffusion, oxidation, wet oxidation, and annealing processes.

[0032] In some embodiments, when the inner furnace door 210 blocks the opening 111 of the furnace tube 100, the inner furnace door 210 specifically achieves the effect of blocking the opening 111 by contacting the end 110. After the inner furnace door 210 contacts the end 110, there will be a tiny gap between them. Inert gas can enter the furnace tube 100 through the tiny gap. At the same time, the tiny gap is filled with inert gas, which can prevent the reactants in the furnace tube 100 from diffusing to the tiny gap, thereby preventing the inner furnace door 210 from sticking to the end 110.

[0033] In another embodiment, referring to Figures 5 and 12, at least one of the inner furnace door 210 and the end portion 110 is provided with at least two airflow channels 214. These airflow channels 214 are specifically located at the contact point between the inner furnace door 210 and the end portion 110. The extending direction of the airflow channels 214 is perpendicular to the axis of the furnace tube 100. The airflow channels 214 are spaced apart and evenly distributed along the direction surrounding the opening 111 of the furnace tube 100. The first cavity 310 is connected to the furnace tube 100 through each airflow channel 214, allowing inert gas to enter the furnace tube 100 via the airflow channels 214. In this embodiment, the airflow channels 214 can improve the uniformity and rate of inert gas intake, thereby quickly and effectively preventing reactants from entering the area between the inner furnace door 210 and the end portion 110.

[0034] In some embodiments, referring to Figures 2, 5, and 6, a protrusion 211 is provided on the inner furnace door 210. The protrusion 211 extends in a direction away from the outer furnace door 220. When the inner furnace door 210 blocks the opening 111 of the furnace tube 100, the end face of the protrusion 211 can be located inside the furnace tube 100 so that the protrusion 211 can block part of the opening 111. A first gap 320 is formed between the periphery of the protrusion 211 and the furnace tube 100. After the inert gas enters the furnace tube 100, it can flow along the periphery of the protrusion 211. That is, the protrusion 211 has a guiding effect on the flow of inert gas. The inert gas meets the process gas at the first gap 320, thereby forming a blocking gas ring, that is, forming an isolation region 120. The isolation region 120 surrounds the periphery of the protrusion 211 and is formed within the first gap 320. At this time, the blocking gas ring can stably prevent the diffusion of reactants and process gases. Of course, in other embodiments, the inner furnace door 210 may not have a protrusion 211. The inert gas enters the furnace tube 100 along the airflow groove 214 and meets the process gas near the inner furnace door 210, blocking the process gas from entering the position where the inner furnace door 210 and the furnace tube 100 come into contact, so as to prevent the two from sticking together at high temperature during the process.

[0035] In some embodiments, the protrusion 211 has a second cavity 212, which can be filled with a first heat insulation member 213. When the inner furnace door 210 blocks the opening 111 of the furnace tube 100, at least a portion of the protrusion 211 can be located inside the furnace tube 100, thereby allowing at least a portion of the first heat insulation member 213 to be located inside the furnace tube 100. The first heat insulation member 213 provides heat insulation, i.e., it has a heat preservation function. This can isolate the opening 111 from other areas of the furnace tube 100, thereby preventing the inner furnace door 210 from deforming due to high temperature, which could cause the contact surface between the inner furnace door 210 and the furnace tube 100 to stick together, thus reducing the lifespan of the furnace tube 100 and the furnace door 200. Furthermore, the first heat insulation member 213 can extend the length of the temperature uniformity zone inside the furnace tube 100, reduce heat loss inside the furnace tube 100, thereby improving the temperature uniformity of the furnace tube 100, and thus improving the process uniformity of wafer processing. Of course, in other embodiments, the second cavity 212 may not be filled with the first heat insulation element 213, and the second cavity 212 may be evacuated to achieve the above-mentioned effect.

[0036] In some embodiments, referring to FIG2, the end portion 110 may be provided with a thickened portion 130 so that the thickness of the furnace tube 100 at the end portion 110 is greater than the thickness of other areas of the furnace tube 100. The thickened portion 130 may have a connecting groove 131 extending circumferentially along the opening 111. In some embodiments, the connecting groove 131 may be provided only in a portion of the thickened portion 130, or the connecting groove 131 may be provided around the entire circumference of the thickened portion 130. The first cavity 310 may be connected to the first gap 320 through the connecting groove 131. The end face of the end portion 110 has an inner annular surface 112 and an outer annular surface 113 formed on both sides of the connecting groove 131 in the radial direction. That is, the end face of the end portion 110 is divided into an inner annular surface 112 and an outer annular surface 113 at intervals along its radial direction. The connecting groove 131 is located in the interval region between the inner annular surface 112 and the outer annular surface 113. The connecting groove 131 may be formed in the entire interval region, or it may be formed in a partial interval region. The edge of the inner furnace door 210 can overlap the inner ring surface 112, and the edge of the outer furnace door 220 can be connected to the outer ring surface 113.

[0037] In this embodiment, when the inner furnace door 210 blocks the opening 111 of the furnace tube 100, the edge of the inner furnace door 210 will overlap the inner ring surface 112, and the edge of the outer furnace door 220 will connect to the outer ring surface 113, so that the first cavity 310 is connected to the first gap 320 through the connecting groove 131, thereby allowing the inert gas in the first cavity 310 to flow to the connecting groove 131 (please refer to the direction of the arrow in Figure 11, which indicates the direction of inert gas flow), and enter the first gap 320 sequentially through the connecting groove 131 and the gap between the inner furnace door 210 and the inner ring surface 112. Specifically, in addition to entering the first gap 320 through the connecting groove 131 and the passage formed by the incomplete fit between the inner furnace door 210 and the inner ring surface 112, the inert gas will also enter the first gap 320 sequentially through the connecting groove 131 and the aforementioned airflow groove 214.

[0038] In this embodiment, since the inert gas can fill the connecting groove 131, a sufficient amount of inert gas accumulates around the contact point between the inner furnace door 210 and the inner ring surface 112, thereby ensuring that a sufficient amount of inert gas always enters the first gap 320 through the gap between the inner furnace door 210 and the inner ring surface 112. Of course, in other embodiments, the connecting groove 131 may not be provided on the thickened portion 130.

[0039] In some embodiments, the thickened portion 130 may be made of an opaque, high thermal resistance quartz material. Such a thickened portion 130 can isolate the influence of heat radiation, thereby reducing the temperature of the contact surface between the inner furnace door 210 and the inner ring surface 112 as much as possible. Of course, the embodiments of this application do not impose specific limitations on this.

[0040] In some embodiments, the number of connecting grooves 131 can be at least two. In this case, each connecting groove 131 is a connecting groove 131 that is only partially opened in the thickened part 130. Referring to Figures 2 and 3, when the inner furnace door 210 blocks the opening 111 of the furnace tube 100, the outer ring surface 113 protrudes relative to the inner ring surface 112 toward the side where the outer furnace door 220 is located. That is, there is a height difference between the outer ring surface 113 and the inner ring surface 112 in the axial direction of the furnace tube 100, thereby forming a receiving groove 114. That is, the end 110 is also provided with a receiving groove 114. The receiving groove 114 is connected to each connecting groove 131. At least a part of the inner furnace door 210 is located in the receiving groove 114, and there is a second gap between the outer peripheral surface of the inner furnace door 210 and the side wall of the receiving groove 114. The second gap is opposite to and connected to the connecting groove 131, so that the first cavity 310 is connected to the connecting groove 131 through the second gap.

[0041] In this embodiment, when the inner furnace door 210 blocks the opening 111 of the furnace tube 100, since at least a portion of the inner furnace door 210 is located within the receiving groove 114, the compactness of the furnace tube 100 and the furnace door 200 can be improved, thereby reducing the overall space occupied. Of course, in other embodiments, the outer ring surface 113 may not protrude relative to the inner ring surface 112 toward the side where the outer furnace door 220 is located, that is, the end 110 is not provided with the receiving groove 114. In this case, the outer ring surface 113 and the inner ring surface 112 can be flush with each other in the radial direction of the opening 111.

[0042] In some embodiments, the number of connecting slots 131 can be one, and the connecting slot 131 can be an annular connecting slot.

[0043] In another embodiment, the number of connecting grooves 131 can be at least two, and each connecting groove 131 is spaced apart along the direction surrounding the opening 111 of the furnace tube 100, that is, each connecting groove 131 is an arc-shaped connecting groove, and the end 110 can be provided with a reinforcing part 115. For details, please refer to Figure 4. The reinforcing part 115 is located between adjacent connecting grooves 131, that is, the reinforcing part 115 can be a structure formed when processing each connecting groove 131. This can ensure the structural strength of the connecting groove 131, thereby ensuring the structural strength of the end 110. In addition, the reinforcing part 115 can disperse the heat of the furnace tube 100, thereby avoiding the problem of excessive temperature of the furnace door 200.

[0044] In some embodiments, referring to Figures 2, 9, and 10, the semiconductor process equipment may further include an annular mounting member 230 connected to an outer annular surface 113. When the inner furnace door 210 blocks the opening 111 of the furnace tube 100, the outer furnace door 220 contacts the annular mounting member 230, so that the end 110, the inner furnace door 210, the outer furnace door 220, and the annular mounting member 230 form a first cavity 310. Since the annular mounting member 230 is always connected to the outer annular surface 113, this can prevent the outer furnace door 220 from directly colliding with the outer annular surface 113 during the process of the furnace door 200 blocking the opening 111, thereby avoiding damage to the outer annular surface 113. Of course, in other embodiments, the semiconductor process equipment may not include the annular mounting member 230, and the outer furnace door 220 may directly contact the outer annular surface 113 during the process of the inner furnace door 210 blocking the opening 111.

[0045] In some embodiments, a first sealing element 400 may be provided between the outer furnace door 220 and the annular mounting member 230, and the first sealing element 400 shall be in a sealing fit with both the outer furnace door 220 and the annular mounting member 230; and / or, a second sealing element may be provided between the annular mounting member 230 and the outer annular surface 113, and the second sealing element shall be in a sealing fit with both the annular mounting member 230 and the outer annular surface 113. The first sealing element 400 and / or the second sealing element can isolate the first cavity 310 from the external environment, that is, the sealing performance of the first cavity 310 can be ensured by the first sealing element 400 and / or the second sealing element, thereby ensuring the pressure stability of the first cavity 310 and thus ensuring the flow stability of the inert gas. Of course, in other embodiments, the first sealing element 400 may not be provided between the outer furnace door 220 and the annular mounting member 230, and / or the second sealing element may not be provided between the annular mounting member 230 and the outer annular surface 113.

[0046] In addition, the aforementioned isolation area 120 can prevent corrosive gases inside the furnace tube 100 from escaping to the vicinity of the outer furnace door 220, thereby preventing the outer furnace door 220 from being corroded, and at the same time preventing corrosion of the first seal 400 and the second seal. That is, the isolation area 120 can prevent the first seal 400 and the second seal from failing, thereby extending the service life of the first seal 400 and the second seal.

[0047] In some embodiments, referring to Figures 2 and 3, to ensure a stable connection between the annular mounting member 230 and the outer annular surface 113, the semiconductor process equipment may further include a spacer ring 610 and a fixing flange 620. The outer edge of the end 110 may have a protruding annular flange 160; specifically, the outer edge of the thickened portion 130 has a protruding annular flange 160. The fixing flange 620 is fitted onto the furnace tube 100, and the annular mounting member 230 and the fixing flange 620 are located on opposite sides of the annular flange 160. The spacer ring 610... Ten rings are fitted onto the annular flange 160, and the thickness of the spacer ring 610 can be equal to the thickness of the annular flange 160, so that the spacer ring 610 is located between the annular mounting member 230 and the fixed flange 620. At this time, the annular mounting member 230, the spacer ring 610 and the fixed flange 620 are connected in sequence through the first threaded connector, so that the annular flange 160 is clamped between the annular mounting member 230, the spacer ring 610 and the fixed flange 620, thereby achieving the effect of stably installing the annular mounting member 230 on the outer ring surface 113.

[0048] Please refer to Figures 1 and 2. The outer furnace door 220 is provided with a first air inlet 221, which is connected to the first cavity 310. The first air inlet 221 is used to introduce inert gas. In some embodiments, the temperature of the introduced inert gas can be equal to the temperature of the process gas.

[0049] In another embodiment, the temperature of the inert gas is lower than that of the process gas. In this case, the lower-temperature inert gas has the effect of reducing the temperature of the furnace door 200, which can protect the furnace door 200 and prevent the furnace door 200 from sticking together at the contact point with the furnace tube 100 at high temperatures. In some embodiments, the inert gas can be nitrogen.

[0050] In some embodiments, referring to Figures 7, 8 and 10, the semiconductor process equipment may further include an elastic buffer assembly 500. The elastic buffer assembly 500 includes a base 510 and at least two elastic blades 520 spaced apart along the edge of the base 510. The base 510 is connected to the outer furnace door 220, and the inner furnace door 210 has at least two limiting grooves 215. In the axial direction of the furnace tube 100, the elastic blades 520 are limited within the limiting grooves 215. Each elastic blade 520 corresponds to each limiting groove 215 and is matched in a limiting manner so that the outer furnace door 220 and the inner furnace door 210 are connected through the elastic buffer assembly 500.

[0051] In this embodiment, the elastic buffer component 500 has a buffering function. Specifically, during the process of the inner furnace door 210 sealing the opening 111 of the furnace tube 100, that is, during the process of the outer furnace door 220 driving the inner furnace door 210 to move, when the inner furnace door 210 contacts the end 110, due to inertia, the outer furnace door 220 will tend to continue moving towards the inner furnace door 210. At this time, the elastic blade 520 can buffer the movement of the outer furnace door 220 through its own deformation, thereby preventing the inner furnace door 210 from continuing to exert force on the end 110, and subsequently preventing the inner furnace door 210 from continuing to exert force on the inner ring surface 112, thereby avoiding damage to the inner ring surface 112 and the inner furnace door 210, thus extending the service life of the furnace tube 100 and the inner furnace door 210. Of course, in other embodiments, the semiconductor process equipment may not include the elastic buffer component 500.

[0052] In some embodiments, an annular connector 511 protrudes from the edge of the base 510 in the thickness direction. Each elastic leaf 520 is spaced apart and evenly distributed on the annular connector 511. Since the annular connector 511 surrounds the base 510, the connection area between the annular connector 511 and the base 510 is large, resulting in better support for each elastic leaf 520. Consequently, each elastic leaf 520 can stably perform its buffering function. Of course, in other embodiments, the edge of the base 510 may protrude with multiple spaced connecting pieces, each connecting piece corresponding to and connected to each elastic leaf 520.

[0053] In some embodiments, each elastic blade 520 can be connected to the annular connector 511 via a second threaded connector, which can effectively increase the flexibility of each elastic blade 520, thereby ensuring the buffering effect of each elastic blade 520 on the outer furnace door 220.

[0054] In some embodiments, referring to Figure 6, the inner furnace door 210 has at least two spaced-apart limiting protrusions 216, each limiting protrusion 216 having a limiting groove 215. A transition groove 217 is provided between adjacent limiting protrusions 216, allowing the elastic blades 520 to enter the limiting grooves 215 through the transition grooves 217. That is, the side of the limiting protrusions 216 has openings. During the connection of the elastic buffer assembly 500 and the inner furnace door 210, each elastic blade 520 is placed into its corresponding transition groove 217. By rotating the base 510, each elastic blade 520 can move from its corresponding transition groove 217 through its corresponding opening into the limiting groove 215. Similarly, when disassembling the elastic buffer assembly 500 and the inner furnace door 210, rotating the base 510 in the opposite direction allows each elastic blade 520 to be removed from its corresponding limiting groove 215. Therefore, this method of connecting or disassembling the elastic buffer assembly 500 and the inner furnace door 210 is relatively simple, convenient, and quick. Of course, in other embodiments, the inner furnace door 210 may not have a spaced-out limiting protrusion 216.

[0055] In some embodiments, the base 510 can be pentagonal in shape, and each side of the base 510 is provided with elastic blades 520, which makes the number of elastic blades 520 relatively large, so as to further buffer the movement of the outer furnace door 220. In addition, the pentagonal arrangement of elastic blades 520 can evenly bear the weight of the inner furnace door 210, effectively preventing the inner furnace door 210 from tilting when blocking the opening 111 of the furnace tube 100, thereby avoiding collision. Of course, the shape of the base 510 is not specifically limited in this embodiment.

[0056] In some embodiments, referring to FIG7, the elastic buffer assembly 500 may further include a first buffer member 530. The first buffer member 530 is disposed on the surface of the elastic blade 520 facing the furnace tube 100, so that the first buffer member 530 can contact the inner furnace door 210. During the process of the inner furnace door 210 blocking the opening 111 of the furnace tube 100, the elastic blade 520 can buffer the movement of the outer furnace door 220 through its own deformation, and the first buffer member 530 can further buffer the movement of the outer furnace door 220 through its own deformation, thereby further reducing the impact between the inner furnace door 210 and the furnace tube 100, and thus avoiding damage to the furnace tube 100. Of course, in other embodiments, the elastic buffer assembly 500 may not include the first buffer member 530.

[0057] In some embodiments, the elastic buffer assembly 500 may further include a second heat insulation element. The first buffer element 530 is a flexible buffer tube, allowing it to deform and compress, thereby achieving a buffering effect. The second heat insulation element is filled within the flexible buffer tube. This second heat insulation element can insulate the temperature between the inner furnace door 210 and the outer furnace door 220, preventing the outer furnace door 220 from becoming too hot. Simultaneously, it reduces the risk of high temperatures being conducted through the inner furnace door 210 to the elastic buffer assembly 500, potentially causing deformation of the elastic buffer assembly 500 at high temperatures. Furthermore, since the second heat insulation element is filled within the flexible buffer tube, this improves the overall structural compactness. Of course, in other embodiments, the elastic buffer assembly 500 may not include a second heat insulation element.

[0058] In some embodiments, the first buffer 530 can be made of high-purity alumina, and the second heat insulation can be made of aluminum silicate cotton. Of course, this application embodiment does not impose specific limitations on this. After the second heat insulation is fitted into the first buffer 530, both ends of the second heat insulation can be positioned on the elastic leaf 520 by the fixing member 570 to further ensure the stability of the second heat insulation. In some embodiments, the fixing member 570 can be a third threaded connector.

[0059] In some embodiments, the base 510 can be an annular member, with a central hole 512 and an annular reinforcing member 513. The central hole 512 can reduce the weight of the base 510, thereby reducing the weight of the elastic buffer assembly 500. The annular reinforcing member 513 surrounds the central hole 512 and is opposite to the annular connecting member 511, so that the annular reinforcing member 513 can improve the structural strength of the base 510 and prevent the base 510 from deforming under force, thus affecting the buffering effect of the elastic buffer assembly 500 on the outer furnace door 220. Of course, in other embodiments, the base 510 may not have a central hole 512 and annular reinforcing member 513.

[0060] In some embodiments, the elastic buffer assembly 500 and the outer furnace door 220 can be specifically connected by a fourth threaded connector.

[0061] In another embodiment, referring to Figures 2 and 8, the elastic buffer assembly 500 may further include a connecting rod 540 and a second buffer member 550. The connecting rod 540 connects the base 510 and the outer furnace door 220, and in the axial direction of the furnace tube 100, the connecting rod 540 can slide relative to at least one of the base 510 and the outer furnace door 220. The second buffer member 550 is sleeved on the connecting rod 540 so that the second buffer member 550 abuts between the base 510 and the outer furnace door 220, and the connecting rod 540 can limit the second buffer member 550.

[0062] In this embodiment, since the connecting rod 540 can slide relative to at least one of the base 510 and the outer furnace door 220, the second buffer 550 can further buffer the movement of the outer furnace door 220 during the process of the inner furnace door 210 blocking the opening 111 of the furnace tube 100. That is, the second buffer 550 can further improve the buffering effect of the outer furnace door 220, thereby further avoiding damage to the furnace tube 100 and the inner furnace door 210.

[0063] In some embodiments, as described above, the second buffer 550 abuts against the base 510 and the outer furnace door 220. This abutment can be direct or indirect, and this application embodiment does not impose specific limitations on this.

[0064] In some embodiments, at least one of the base 510 and the outer furnace door 220 may have a protruding limiting boss 560. The connecting rod 540 can be connected to the limiting boss 560 and can slide relative to the limiting boss 560. The second buffer member 550 abuts against the limiting boss 560. The limiting boss 560 can stably limit the deformation of the second buffer member 550 and at the same time prevent the second buffer member 550 from causing wear on the outer furnace door 220 and / or the base 510. Of course, in other embodiments, neither the base 510 nor the outer furnace door 220 may have a protruding limiting boss 560.

[0065] In some embodiments, the aforementioned limiting boss 560 may be an additional component added to at least one of the base 510 and the outer furnace door 220, or the limiting boss 560 may belong to at least one of the base 510 and the outer furnace door 220. In this case, the limiting boss 560 is only used to stabilize and limit the deformation of the second buffer member 550. Of course, the embodiments of this application do not impose specific limitations on this.

[0066] In some embodiments, the number of the connecting rods 540 and the number of the second buffers 550 may both be one.

[0067] In another embodiment, there are at least two connecting rods 540 and at least two second buffers 550. The connecting rods 540 are spaced apart and are connected to the base 510 and the outer furnace door 220. Each second buffer 550 corresponds to each connecting rod 540. The multiple connecting rods 540 can ensure the connection stability between the outer furnace door 220 and the base 510, thereby ensuring the connection stability between the outer furnace door 220 and the inner furnace door 210. The multiple second buffers 550 can evenly buffer the outer furnace door 220, thereby further improving the buffering effect on the outer furnace door 220.

[0068] The above embodiments of this application focus on describing the differences between the various embodiments. As long as the different optimization features between the various embodiments are not contradictory, they can be combined to form a better embodiment. For the sake of brevity, they will not be described in detail here.

[0069] The above description is merely an embodiment of this application and is not intended to limit the scope of this application. Various modifications and variations can be made to this application by those skilled in the art. Any modifications, equivalent substitutions, improvements, etc., made within the spirit and principles of this application should be included within the scope of the claims of this application.

Claims

1. A semiconductor process apparatus, characterized by, Including furnace tubes (100) and furnace door (200), The end (110) of the furnace tube (100) is provided with an opening (111). The furnace door (200) includes an inner furnace door (210) and an outer furnace door (220), and a first cavity (310) is formed between the inner furnace door (210) and the outer furnace door (220); During the process, the inner furnace door (210) blocks the opening (111), and the first cavity (310) is connected to the furnace tube (100). The first cavity (310) is filled with inert gas, wherein the pressure of the inert gas is greater than the pressure of the process gas in the furnace tube (100), so that part of the inert gas enters the furnace tube (100) through the inner furnace door (210) to form an isolation area (120) at the end (110).

2. The semiconductor process apparatus according to claim 1, wherein At least one of the inner furnace door (210) and the end (110) is provided with at least two airflow slots (214). The extension direction of the airflow slots (214) is perpendicular to the axis of the furnace tube (100). Each airflow slot (214) is spaced apart and evenly arranged in the direction surrounding the opening (111). The first cavity (310) is connected to the furnace tube (100) through each of the airflow slots (214).

3. The semiconductor process apparatus according to claim 1, wherein The inner furnace door (210) has a protruding part (211) that extends in a direction away from the outer furnace door (220). When the inner furnace door (210) blocks the opening (111), the end face of the protruding part (211) is located inside the furnace tube (100), and a first gap (320) is formed between the periphery of the protruding part (211) and the furnace tube (100). The isolation area (120) surrounds the periphery and is formed within the first gap (320).

4. The semiconductor process apparatus according to claim 3, wherein The protrusion (211) has a second cavity (212) filled with a first heat insulation member (213), and at least a portion of the first heat insulation member (213) is located inside the furnace tube (100) when the inner furnace door (210) blocks the opening (111).

5. The semiconductor process apparatus according to claim 3, wherein The end portion (110) is provided with a thickened portion (130), and the thickened portion (130) has a connecting groove (131) extending circumferentially along the opening (111). The first cavity (310) can be connected to the first gap (320) through the connecting groove (131). The end face of the end portion (110) has an inner ring surface (112) and an outer ring surface (113) respectively formed on both sides of the connecting groove (131) in the radial direction. The edge of the inner furnace door (210) can overlap the inner ring surface (112), and the edge of the outer furnace door (220) can be connected to the outer ring surface (113).

6. The semiconductor process apparatus according to claim 5, wherein The number of the connecting grooves (131) is at least two, and the end (110) is also provided with a receiving groove (114). The receiving groove (114) is connected to each of the connecting grooves (131). At least a part of the inner furnace door (210) is located in the receiving groove (114), and there is a second gap between the outer peripheral surface of the inner furnace door (210) and the side wall of the receiving groove (114). The second gap is opposite to and connected to the connecting groove (131). When the inner furnace door (210) blocks the opening (111), the outer ring surface (113) protrudes relative to the inner ring surface (112) toward the side where the outer furnace door (220) is located.

7. The semiconductor process apparatus according to claim 5, wherein The number of the connecting grooves (131) is at least two, and each connecting groove (131) is spaced apart along the direction surrounding the opening (111). The end (110) is provided with a reinforcing part (115), and the reinforcing part (115) is located between adjacent connecting grooves (131).

8. The semiconductor process apparatus according to claim 5, wherein The semiconductor process equipment also includes an annular mounting member (230), which is connected to the outer annular surface (113). When the inner furnace door (210) blocks the opening (111), the outer furnace door (220) contacts the annular mounting member (230) so that the end (110), the inner furnace door (210), the outer furnace door (220) and the annular mounting member (230) form the first cavity (310). A first sealing element (400) is provided between the outer furnace door (220) and the annular mounting component (230), and the first sealing element (400) is in sealing fit with both the outer furnace door (220) and the annular mounting component (230); and / or, a second sealing element is provided between the annular mounting component (230) and the outer annular surface (113), and the second sealing element is in sealing fit with both the annular mounting component (230) and the outer annular surface (113).

9. The semiconductor process apparatus according to claim 1 or 8, characterized by, The outer furnace door (220) is provided with a first air inlet (221), which is used to introduce the inert gas, the temperature of which is lower than the temperature of the process gas.

10. The semiconductor process apparatus according to claim 1, wherein The semiconductor process equipment also includes an elastic buffer assembly (500), which includes a base (510) and at least two elastic blades (520) spaced apart along the edge of the base (510). The base (510) is connected to the outer furnace door (220), and the inner furnace door (210) has at least two limiting grooves (215). In the axial direction of the furnace tube (100), the elastic blades (520) are limited within the limiting grooves (215), and each elastic blade (520) corresponds to each limiting groove (215) and is in a limiting fit. In the thickness direction of the base (510), an annular connector (511) protrudes from the edge of the base (510), and each of the elastic blades (520) is spaced apart and evenly distributed on the annular connector (511).

11. The semiconductor process apparatus according to claim 10, wherein The inner furnace door (210) has at least two spaced limiting protrusions (216) protruding from it. Each limiting protrusion (216) has a limiting groove (215). There is a transition groove (217) between two adjacent limiting protrusions (216). The elastic blade (520) can enter the limiting groove (215) through the transition groove (217).

12. The semiconductor process apparatus according to claim 10, wherein The elastic buffer assembly (500) further includes a first buffer (530), which is disposed on the surface of the elastic blade (520) facing the furnace tube (100).

13. The semiconductor process apparatus according to claim 12, wherein The elastic buffer assembly (500) further includes a second heat insulation component, wherein the first buffer component (530) is a flexible buffer tube, and the second heat insulation component is filled inside the flexible buffer tube.

14. The semiconductor process apparatus according to claim 10, wherein The base (510) is an annular component. The base (510) has a central hole (512) and an annular reinforcing member (513). The annular reinforcing member (513) surrounds the central hole (512) and is opposite to the annular connector (511).

15. The semiconductor process apparatus according to claim 10, wherein The elastic buffer assembly (500) further includes a connecting rod (540) and a second buffer member (550). The connecting rod (540) connects the base (510) and the outer furnace door (220), and in the axial direction of the furnace tube (100), the connecting rod (540) is slidable relative to at least one of the base (510) and the outer furnace door (220). The second buffer member (550) is sleeved on the connecting rod (540) so that the second buffer member (550) abuts between the base (510) and the outer furnace door (220).

16. The semiconductor process apparatus according to claim 15, wherein At least one of the base (510) and the outer furnace door (220) has a limiting boss (560) protruding from it. The connecting rod (540) is connected to the limiting boss (560) and can slide relative to the limiting boss (560). The second buffer (550) abuts against the limiting boss (560).

17. The semiconductor process apparatus according to claim 15, wherein The number of connecting rods (540) and the number of second buffers (550) are both at least two. Each connecting rod (540) is spaced apart and is connected to the base (510) and the outer furnace door (220). Each second buffer (550) corresponds to each connecting rod (540).

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