Thin film deposition method and deposition equipment

Abstract

The present application relates to a thin film deposition method and deposition equipment. The thin film deposition method comprises the following steps: providing a substrate to be processed and thin film deposition equipment, wherein the thin film deposition equipment comprises a process chamber internally provided with a gas diffusion assembly, a radio frequency power supply system having a frequency of 0.1-100 MHz, and a carrier plate; placing the substrate to be processed on the carrier plate; transferring the carrier plate into the process chamber; introducing a process gas comprising silane and a nitrogen source with a gas flow ratio of 0.01-0.5 into the process chamber by means of the gas diffusion assembly, exciting the process gas into a plasma under the action of the radio frequency power supply system to form a silicon nitride thin film on the surface of the substrate to be processed, and controlling, during plasma excitation, the radio frequency power density in the range of 200-5000 W / m2, the reaction temperature in the range of 150-400°C, the pressure in the range of 0.5-5 Torr, and the vertical distance between the carrier plate and the gas diffusion assembly in the range of 10-50 mm; and transferring the carrier plate out of the process chamber. The thin film deposition method and the deposition equipment of the present application achieve the deposition of a high-quality thin film.

Description

A thin film deposition method and deposition apparatus Technical Field

[0001] This application relates to the field of solar cell technology, and in particular to a thin film deposition method and deposition apparatus. Background Technology

[0002] With the growth of global energy demand and the increasing severity of environmental pollution, solar energy, as a clean and renewable energy source, is receiving more and more attention. Among solar cell technologies, heterojunction solar cells, due to their advantages such as high photoelectric conversion efficiency, low temperature coefficient, simple manufacturing process, and ease of thinning, have gradually become the mainstream development direction for next-generation solar cells.

[0003] In the fabrication of heterojunction solar cells, back-side planarization is a crucial step. It reduces the thickness of the intrinsic passivation layer on the back side, shortens processing time, and simultaneously improves hole transport, reduces series resistance, and increases the fill factor. Furthermore, textured polishing of the back-side reduces sunlight transmission from the back and increases photon absorption by the silicon wafer, thereby improving the cell's photoelectric conversion efficiency. To protect the textured surface of the light-receiving side from the back-side polishing process, a mask is typically applied to the light-receiving side. This mask must be removed after the back-side textured polishing to ensure the cell's photoelectric performance.

[0004] For back-contact (BC) heterojunction solar cells, the PN junction and metal electrodes are located on the back side of the cell, while the light-receiving side is unshielded. This structure significantly improves the cell's photoelectric conversion efficiency. In the fabrication process of this type of cell, the N-region and P-region on the back side require masking to prevent interference between local processes, ensuring consistent and reliable cell performance. Furthermore, a silicon nitride thin film can also be deposited on the front side of the back-contact (BC) heterojunction solar cell as an antireflection layer.

[0005] Although silicon nitride thin films have played a crucial role in solar cell manufacturing, existing technologies still present several challenges, such as non-dense mask films, severe corrosion during polishing, and uneven film deposition. These issues often lead to premature removal of parts of the mask during subsequent removal processes, damaging the protected layer, or inconsistent antireflection on the cell surface when used as an antireflection layer. These problems not only affect the performance of solar cells but also increase manufacturing costs and process complexity. Summary of the Invention

[0006] Therefore, it is necessary to provide a thin film deposition method and deposition equipment to address the problem that mask quality issues in existing heterojunction solar cells affect solar cell performance and increase manufacturing costs and process complexity.

[0007] To achieve the above objectives, this application provides a thin film deposition method, comprising the following steps:

[0008] Provides a substrate to be processed and a thin film deposition equipment. The thin film deposition equipment includes at least one process chamber, an RF power system and a carrier board. The frequency of the RF power system is 0.1MHz to 100MHz. The process chamber is also equipped with a gas diffusion component.

[0009] The substrate to be processed is placed on the carrier plate;

[0010] The carrier plate is transferred into the process cavity;

[0011] Process gas is introduced into the process chamber through the gas diffusion assembly, and under the action of the radio frequency power system, the process gas is excited into plasma, so that the process gas reacts on the surface of the substrate to be processed to form a silicon nitride thin film. The process gas includes silane and a nitrogen source, and the gas flow ratio of silane to nitrogen source is 0.01 to 0.5. During the plasma excitation process, the radio frequency power density is controlled to be 200 W / m. 2 ~5000W / m 2 The reaction temperature is 150℃~400℃, the pressure in the process chamber is 0.5Torr~5Torr, and the vertical distance between the carrier plate and the gas diffusion assembly is 10mm~50mm.

[0012] The carrier plate is transferred out of the process cavity.

[0013] In one embodiment, the nitrogen source includes at least one of nitrogen and ammonia. When the process gas introduced contains silane and nitrogen, the gas flow rate ratio of the introduced silane to nitrogen is controlled to be 0.01 to 0.5; when the process gas introduced contains silane and ammonia, the gas flow rate ratio of the introduced silane to ammonia is controlled to be 0.01 to 0.3.

[0014] In one embodiment, the thin film deposition apparatus further includes:

[0015] A heat support plate is located inside the process cavity. The heat support plate is used to support the carrier plate and heat the substrate to be processed to the reaction temperature.

[0016] A lifting device is used to lift the thermal support plate to support the carrier plate and adjust the vertical distance between the carrier plate and the gas diffusion assembly;

[0017] A pressure control device is used to control the pressure inside the process chamber.

[0018] In one embodiment, the gas diffusion assembly includes at least a backplane connected to the radio frequency power system and a gas diffuser mounted on the backplane. The backplane and the gas diffuser together form a gas distribution area, and the gas diffuser is provided with multiple gas diffusion channels.

[0019] The process gas is introduced into the process chamber through the gas diffusion assembly, including:

[0020] The process gas is introduced into the gas distribution area from the outside, and diffused into the area below the gas diffuser in the process chamber through the gas diffusion channel.

[0021] In one embodiment, the center of the gas diffuser on the side away from the back plate is recessed relative to the edge, and the recessed shape on the side of the gas diffuser away from the back plate is arc-shaped or stepped.

[0022] In one embodiment, the gas diffusion assembly further includes an adjustment section extending through the back plate and connected to the gas diffuser. The adjustment section is used to form a recess at the center of the gas diffuser on the side away from the back plate and to adjust the depth of the recess at the center of the gas diffuser on the side away from the back plate.

[0023] In one embodiment, a medium plate is also mounted on the gas diffuser, and the medium plate is located below the side of the gas diffuser away from the back plate. When the side of the gas diffuser away from the back plate has a recess, there is a gap between the medium plate and the side of the gas diffuser away from the back plate, and the distance of the gap gradually decreases from the center to the edge of the gas diffuser.

[0024] In one embodiment, the thin film deposition apparatus further includes a loading and unloading device for moving the carrier plate into and out of the process chamber. The loading and unloading device includes a loading and unloading chamber, a first conveying mechanism, and a second conveying mechanism, with the loading and unloading chamber arranged sequentially with the process chamber.

[0025] Sending the carrier plate into the process cavity includes:

[0026] The first conveying mechanism is used to convey the carrier plate from the loading / unloading cavity to the process cavity;

[0027] Under the action of the radio frequency power system, the process gas is excited into plasma, so that the process gas reacts on the surface of the substrate to be processed to form the silicon nitride thin film;

[0028] Transferring the carrier plate out of the process cavity includes:

[0029] The carrier plate is transferred from the process cavity back to the loading and unloading cavity via the second conveying mechanism.

[0030] In one embodiment, the first conveying mechanism and the second conveying mechanism are partially equipped with roller drive to drive the carrier plate in and out of the process cavity, and the rollers of the first conveying mechanism or the second conveying mechanism located in the process cavity can extend and retract along the central axis of the rollers.

[0031] Specifically, using the first conveying mechanism to convey the carrier plate from the loading / unloading cavity to the process cavity includes:

[0032] The carrier plate is transferred into the loading and unloading cavity via the first conveying mechanism;

[0033] The carrier plate is then transferred into the process cavity via the first conveying mechanism.

[0034] The process of transferring the carrier plate from the process chamber back to the loading / unloading chamber via the second conveying mechanism specifically includes:

[0035] Extend the rollers of the second conveying mechanism into the process cavity and lower the heat support plate so that the carrier plate on the heat support plate falls onto the rollers of the second conveying mechanism.

[0036] The carrier plate that falls onto the roller of the second conveying mechanism is transferred from the process chamber to the loading and unloading chamber through the second conveying mechanism.

[0037] In one embodiment, the thin film deposition apparatus further includes a loading and unloading device for moving the carrier plate into and out of the process chamber. The loading and unloading device includes a loading chamber, an unloading chamber, and a third conveying mechanism, wherein the loading chamber, the process chamber, and the unloading chamber are arranged sequentially.

[0038] Sending the carrier plate into the process cavity includes:

[0039] The carrier plate is transferred from the loading cavity to the process cavity using the third conveying mechanism.

[0040] Under the action of the radio frequency power system, the process gas is excited into plasma, so that the process gas reacts on the surface of the substrate to be processed to form the silicon nitride thin film;

[0041] Transferring the carrier plate out of the process cavity includes:

[0042] The carrier plate is transferred from the process chamber to the unloading chamber via the third conveying mechanism.

[0043] In one embodiment, the carrier plate includes a plurality of carrier frames arranged in an array, the carrier frames having a plurality of hollow structures arranged in an array, and / or, the edges of the carrier frames having blocking structures for placing the substrate to be processed.

[0044] Secondly, this application also provides a thin film deposition apparatus for performing thin film deposition using the thin film deposition method described in any of the above embodiments. The thin film deposition apparatus includes a loading and unloading device, a process chamber, an RF power supply system, and a carrier plate.

[0045] The thin film deposition method in this embodiment introduces silane and nitrogen source as process gases into the process chamber, controls the gas flow ratio of silane to nitrogen source to be 0.01 to 0.5, and excites the process gases into plasma under the action of an RF power supply system with a frequency configuration of 0.12MHz to 100MHz. During the plasma excitation process, the RF power density is controlled to be 200W / m². 2 ~5000W / m 2 The reaction temperature is 150℃~400℃, the pressure inside the process chamber is 0.5Torr~5Torr, and the vertical distance between the carrier plate and the gas diffusion component is 10mm~50mm, so that the process gas reacts on the surface of the substrate to be processed to form a silicon nitride thin film. That is, by simultaneously and precisely controlling the gas flow ratio, radio frequency power density, reaction temperature, pressure inside the process chamber, and vertical distance between the carrier plate and the gas diffusion component, the silicon nitride thin film formed is uniform, dense, and corrosion-resistant. In the process of solar cell fabrication, it plays a better protective role as a mask, improving the performance and yield of solar cells. In addition, the thin film deposition equipment used in this application for depositing silicon nitride thin film is suitable for large-area deposition, and the required process parameters can be adjusted according to different process requirements and film quality requirements to obtain the film with the best performance and maximize production capacity. Attached Figure Description

[0046] To more clearly illustrate the technical solutions in the embodiments of this application or the conventional technology, the drawings used in the description of the embodiments or the conventional technology will be briefly introduced below. Obviously, the drawings described below are only some embodiments of this application. For those skilled in the art, other drawings can be obtained based on these drawings without creative effort.

[0047] Figure 1 is a schematic flowchart of a thin film deposition method provided in one embodiment;

[0048] Figure 2 is a schematic diagram of a thin film deposition apparatus provided in one embodiment;

[0049] Figure 3 is a schematic diagram of another structure of the thin film deposition apparatus provided in one embodiment;

[0050] Figure 4 is a schematic diagram of the process cavity provided in one embodiment;

[0051] Figure 5 is a schematic diagram of the structure of a gas diffuser provided in one embodiment;

[0052] Figure 6 is a schematic diagram of the change in the depth of the recess at the center of the gas diffuser on the side away from the back plate in one embodiment of the gas diffuser provided.

[0053] Figure 7 is a schematic diagram of the structure of the carrier plate provided in one embodiment;

[0054] Figure 8 is a structural schematic diagram of the support frame provided in one embodiment;

[0055] Figure 9 is a schematic diagram of another structure of the support frame provided in one embodiment;

[0056] Figure 10 is a schematic diagram of another structure of the support frame provided in one embodiment;

[0057] Figure 11 is a schematic diagram of the structure of the first conveying mechanism provided in one embodiment after conveying the carrier plate to the top of the thermal support plate;

[0058] Figure 12 is a schematic diagram of the structure after the second conveying mechanism provided in one embodiment conveys the carrier plate to the heat support plate;

[0059] Figure 13 is a schematic diagram of the structure of plasma reaction in process chamber for thin film deposition in one embodiment;

[0060] Figure 14 is a schematic diagram of the structure of the lifting device provided in one embodiment after raising the carrier plate above the second conveying mechanism;

[0061] Figure 15 is a schematic diagram of the structure of the lifting device provided in one embodiment after the carrier plate is lowered onto the second conveying mechanism.

[0062] Explanation of reference numerals in the attached figures:

[0063] 1-Thin film deposition equipment, 11-Process chamber, 111-Inlet / outlet channel, 112-Insulating seal, 12-RF power supply system, 13-Carrier plate, 131-Bearing frame, 132-Blocking structure, 14-Gas diffusion assembly, 141-Back plate, 142-Gas diffuser, 143-Gas distribution area, 144-Adjustment unit, 15-Electromagnetic shield, 16-Pressure control device, 17-Heat support plate, 18-Lifting device, 19-Gas supply system, 2A, 2B-Loading and unloading devices, 21A-Loading and unloading chamber, 22A-First conveying mechanism, 23A-Second conveying mechanism, 24A-First heating plate, 21B-Loading chamber, 22B-Unloading chamber, 23B-Third conveying mechanism, 24B-Second heating plate. Detailed Implementation

[0064] To facilitate understanding of this application, a more complete description will be provided below with reference to the accompanying drawings, which illustrate embodiments of the present application. However, the present application can be implemented in many different forms and is not limited to the embodiments described herein. Rather, these embodiments are provided so that the disclosure of this application will be thorough and complete.

[0065] Unless otherwise defined, all technical and scientific terms used herein have the same meaning as commonly understood by one of ordinary skill in the art to which this application belongs. The terminology used herein is for the purpose of describing particular embodiments only and is not intended to be limiting of the application.

[0066] In the description of this application, it should be understood that if terms such as "center", "longitudinal", "lateral", "length", "width", "thickness", "upper", "lower", "front", "rear", "left", "right", "vertical", "horizontal", "top", "bottom", "inner", "outer", "clockwise", "counterclockwise", "axial", "radial", "circumferential" appear, these terms indicate the orientation or positional relationship based on the orientation or positional relationship shown in the accompanying drawings, and are only for the convenience of describing this application and simplifying the description, and do not indicate or imply that the device or element referred to must have a specific orientation, or be constructed and operated in a specific orientation, and therefore should not be construed as a limitation of this application.

[0067] Furthermore, where the terms "first" and "second" appear, these terms are for descriptive purposes only and should not be construed as indicating or implying relative importance or implicitly specifying the number of technical features indicated. Thus, a feature defined with "first" or "second" may explicitly or implicitly include at least one of that feature. In the description of this application, where the term "multiple" appears, "multiple" means at least two, such as two, three, etc., unless otherwise explicitly specified.

[0068] In this application, unless otherwise expressly specified and limited, the terms "installation," "connection," "joining," and "fixing," etc., should be interpreted broadly. For example, they can refer to a fixed connection, a detachable connection, or an integral part; they can refer to a mechanical connection or an electrical connection; they can refer to a direct connection or an indirect connection through an intermediate medium; they can refer to the internal communication of two components or the interaction between two components, unless otherwise expressly limited. Those skilled in the art can understand the specific meaning of the above terms in this application based on the specific circumstances.

[0069] In this application, unless otherwise expressly specified and limited, the use of descriptions such as "above" or "below" the second feature indicates that the first and second features are in direct contact or indirect contact via an intermediate medium. Furthermore, "above," "on top of," and "over" the second feature can mean that the first feature is directly above or diagonally above the second feature, or simply that the first feature is at a higher horizontal level than the second feature. Similarly, "below," "below," and "under" the second feature can mean that the first feature is directly below or diagonally below the second feature, or simply that the first feature is at a lower horizontal level than the second feature.

[0070] It should be noted that if an element is referred to as being "fixed to" or "set on" another element, it can be directly on the other element or there may be an intervening element. If an element is considered to be "connected to" another element, it can be directly connected to the other element or there may be an intervening element. If so, the terms "vertical," "horizontal," "upper," "lower," "left," "right," and similar expressions used in this application are for illustrative purposes only and do not represent the only possible implementation.

[0071] Please refer to Figure 1. This application provides a thin film deposition method, including the following steps:

[0072] S1: Provide a substrate to be processed (not shown in the figure) and a thin film deposition equipment 1. The thin film deposition equipment 1 includes at least one process chamber 11, an RF power system 12 and a carrier plate 13. The frequency of the RF power system 12 is configured to be 0.1MHz to 100MHz. A gas diffusion component 14 is also provided in the process chamber 11.

[0073] S2: Place the substrate to be processed on the carrier plate 13;

[0074] S3: Transfer the carrier plate 13 into the process cavity 11;

[0075] S4: Process gas is introduced into the process chamber 11 through the gas diffusion component 14, and under the action of the RF power supply system 12, the process gas is excited into plasma, so that the process gas reacts on the surface of the substrate to be processed to form a silicon nitride thin film. The process gas includes silane and nitrogen source, and the gas flow ratio of silane to nitrogen source is 0.01 to 0.5. During the plasma excitation process, the RF power density is controlled to be 200 W / m. 2 ~5000W / m 2 The reaction temperature is 150℃~400℃, the pressure in the process chamber 11 is 0.5Torr~5Torr, and the vertical distance between the carrier plate 13 and the gas diffusion assembly 14 is 10mm~50mm.

[0076] S5: Transfer the carrier plate 13 out of the process cavity 11.

[0077] The aforementioned thin film deposition method involves introducing silane and nitrogen source as process gases into the process chamber 11, controlling the gas flow ratio of silane to nitrogen source to be 0.01–0.5, and exciting the process gases into plasma under the action of an RF power supply system 12 with a frequency configuration of 0.1 MHz–100 MHz. During the plasma excitation process, the RF power density is controlled to be 500 W / m². 2 ~5000W / m 2 The reaction temperature is 150℃~400℃, the pressure inside the process chamber 11 is 0.5Torr~5Torr, and the vertical distance between the carrier plate 13 and the gas diffusion component 14 is 10mm~50mm, so that the process gas reacts on the surface of the substrate to be processed to form a silicon nitride thin film. That is, by simultaneously and precisely controlling the gas flow ratio, radio frequency power density, reaction temperature, pressure inside the process chamber 11, and vertical distance between the carrier plate 13 and the gas diffusion component 14, the silicon nitride thin film formed is uniform in quality, has good density, and is corrosion resistant. In the process of solar cell manufacturing, it plays a better protective role as a mask, improving the yield of solar cells. In addition, the thin film deposition equipment 1 used in this application for depositing silicon nitride thin film is suitable for large-area deposition. It can also adjust the required process parameters according to different process requirements and thin film quality requirements to obtain the best-performing thin film and maximize production capacity.

[0078] Please refer to Figures 2 to 10. Perform step S1, providing a substrate to be processed and a thin film deposition equipment 1. The thin film deposition equipment 1 includes at least one process chamber 11, an RF power system 12, and a carrier plate 13. The frequency of the RF power system 12 is configured to be 0.1MHz to 100MHz. A gas diffusion component 14 is also provided in the process chamber 11.

[0079] In some embodiments, as shown in Figures 2 and 4, the radio frequency (RF) power system 12 includes an RF power supply and a matching adapter. The RF power supply and matching adapter work together to feed RF power to the gas diffusion assembly 14, so that the gas diffusion assembly 14 and the grounded carrier plate 13 or thermal support plate 17 form a high-frequency electromagnetic field, ionizing the process gas into plasma. It should be noted that when the frequency of the RF power system 12 is too low or too high, the quality of the formed thin film will be poor, making it difficult to meet production requirements. Therefore, by configuring the frequency of the RF power system 12 to 0.1MHz to 100MHz, production requirements can be met, thereby ensuring the quality of the formed thin film.

[0080] As shown in Figure 4, the thin film deposition equipment 1 also includes an electromagnetic shielding cover 15, which is used to protect the radio frequency power system 12 from external electromagnetic interference and ensure that the equipment can operate stably.

[0081] As shown in Figures 2 and 3, the process chamber 11 provides an environment for the reaction of process gases and thin film deposition. In some embodiments, the thin film deposition apparatus 1 further includes a pressure control device 16, which controls the pressure within the process chamber 11. Since the pressure within the process chamber 11 affects the plasma density and energy distribution, thus affecting the efficiency of the thin film deposition process and consequently the film quality, the pressure control device 16 can regulate the pressure within the process chamber 11 to the desired range. It should be noted that the pressure control device 16 can control multiple chambers, or each chamber can have a separate pressure control device 16; this will not be further explained here.

[0082] Furthermore, as shown in Figure 4, the process chamber 11 has at least one inlet / outlet channel 111 on its side wall for the entry and exit of the carrier plate 13. When process gas is introduced into the process chamber 11, the inlet / outlet channel 111 is closed, and the pressure control device 16 can regulate the pressure inside the process chamber 11 to the required range. The pressure control device 16 includes a vacuum pump or other suitable components.

[0083] In some embodiments, as shown in Figures 2 to 4, the thin film deposition apparatus 1 further includes a thermal support plate 17 located within the process chamber 11. The thermal support plate 17 is used to support the carrier plate 13 and heat the substrate to be processed to the reaction temperature. The thermal support plate 17 is movable within the process chamber 11. The thin film deposition apparatus 1 also includes a lifting device 18, which can lift the thermal support plate 17 to support the carrier plate 13, thereby adjusting the distance between the carrier plate 13 and the gas diffusion assembly 14. This helps to regulate the electric field and flow field within the process chamber 11, thereby improving the uniformity and quality of the formed thin film.

[0084] In some embodiments, as shown in FIG4, the gas diffusion assembly 14 includes at least a backplate 141 connected to the radio frequency power system 12 and a gas diffuser 142 mounted on the backplate 141. The backplate 141 and the gas diffuser 142 enclose a gas distribution area 143, and the gas diffuser 142 is provided with a plurality of gas diffusion channels.

[0085] In addition, as shown in Figures 2 to 4, the thin film deposition apparatus 1 also includes a gas supply system 19, which is connected to the back plate 141 and is used to supply process gas to the gas distribution area 143; an insulating seal 112 is also provided between the side wall of the process chamber 11 and the back plate 141 to ensure the airtightness of the process chamber 11.

[0086] The gas diffuser 142 and the carrier plate 13 form a capacitively coupled planar discharge structure, and the potential difference between the gas diffuser 142 and the carrier plate 13 is equal at every point on the lower surface of the gas diffuser 142. A high-frequency electromagnetic field is generated by the radio frequency power system 12 to ionize and excite the process gas flowing out of the gas diffuser 142 in the space between the gas diffuser 142 and the carrier plate 13 to form plasma, which is then deposited on the surface of the substrate to be processed to form a thin film.

[0087] In some embodiments, as shown in FIG5, the center of the gas diffuser 142 on the side away from the back plate 141 is recessed relative to the edge, and the recessed shape of the side of the gas diffuser 142 away from the back plate 141 is arc-shaped or stepped.

[0088] In some embodiments, as shown in FIG4, the gas diffusion assembly 14 further includes an adjustment section 144, which penetrates the back plate 141 and is connected to the gas diffuser 142. The adjustment section 144 is used to form a recess at the center of the side of the gas diffuser 142 away from the back plate 141 and to adjust the depth of the recess on the side of the gas diffuser 142 away from the back plate 141. The adjustment section 144 includes an adjustment bolt or other suitable device.

[0089] That is, by directly designing the center of the side of the gas diffuser 142 away from the back plate 141 to be recessed relative to the edge, or by setting the adjustment part 144 to make the center of the side of the gas diffuser 142 away from the back plate 141 recessed, the distance between the gas diffuser 142 and the carrier plate 13 can be increased compared to when the gas diffuser 142 is a planar structure.

[0090] When the gas diffuser 142 is a planar structure, the deposited silicon nitride film has a uniform distribution with a thicker film layer in the central region. Since the potential difference between the gas diffuser 142 and the carrier plate 13 remains constant, when the center of the gas diffuser 142 on the side away from the back plate 141 is recessed relative to the edge, the depth of the recessed region is greater than that of the periphery. Therefore, the electric field strength between the central recessed region of the gas diffuser 142 and the carrier plate 13 is lower than when the gas diffuser 142 is a planar structure. As a result, the plasma density in the central recessed region of the gas diffuser 142 is reduced, the film deposition thickness in the central region is thinned, the thicker silicon nitride film deposition in the central region is improved, and the uniformity of film deposition is optimized.

[0091] For example, the deeper the recess formed at the center of the side of the gas diffuser 142 away from the back plate 141, that is, the greater the distance between the gas diffuser 142 and the carrier plate 13, the thinner the corresponding film deposition thickness.

[0092] Therefore, as shown in Figure 6, when the recess depth of the gas diffuser 142 on the side away from the back plate 141 is adjusted by the adjustment part 144, the center of the side of the gas diffuser 142 away from the back plate 141 can be pulled up by the adjustment part 144, as shown in Figure 6(a). When the gas diffuser 142 is a planar structure and the adjustment part 144 is not pulled up, the initial recess depth d = 0, as shown in Figure 6(b). By pulling up the adjustment part 144, the value of d increases, and the side of the gas diffuser 142 away from the back plate 141 changes from a central planar structure to a central recessed structure. (The last sentence appears to be incomplete and possibly refers to a specification of 4m.) 2 Taking the process chamber of the planar gas diffuser 142 of a certain size as an example, the maximum, minimum and uniform thicknesses of the silicon nitride thin films prepared with different d values ​​are shown in Table 1.

[0093] Table 1

[0094]

[0095] Based on the above results, it can be seen that by adjusting the recess depth d through the adjustment unit 144, as the value of d increases, the maximum and minimum thickness values ​​of the deposited silicon nitride film become closer, and the uniformity of the film is better. That is, by adjusting the recess depth at the center of the side of the gas diffuser 142 away from the back plate 141, it is helpful to form a film with a more uniform thickness.

[0096] Furthermore, as shown in Figure 6(c), when there is already a depression at the center of the side of the gas diffuser 142 away from the back plate 141, as shown in Figure 6(d), the depression depth of the center depression can be further increased by pulling up the adjustment part 144, thereby increasing the d value. Thus, the depression depth of the center of the side of the gas diffuser 142 away from the back plate 141 can be flexibly adjusted by using the adjustment part 144.

[0097] In some embodiments, a dielectric plate (not shown) is also mounted on the gas diffuser 142, and the dielectric plate is located below the side of the gas diffuser 142 away from the back plate 141. When the side of the gas diffuser 142 away from the back plate 141 has a recess, there is a gap between the dielectric plate and the side of the gas diffuser 142 away from the back plate 141. The distance of the gap gradually decreases from the center to the edge along the gas diffuser 142. During the operation of the electrode, the influence of the transverse standing wave effect of the radio frequency signal can be weakened, and a uniform electric field is formed between the gas diffuser 142 and the dielectric plate. This can improve the center-thickness phenomenon of the deposited film and optimize the film deposition uniformity. The dielectric plate is a material with a relative permittivity in the range of 2 to 1000.

[0098] In some embodiments, as shown in FIG2, the thin film deposition apparatus 1 further includes a loading and unloading device 2A, which is used to realize the entry and exit of the carrier plate 13 into the process chamber 11. The loading and unloading device 2A includes a loading and unloading chamber 21A, a first conveying mechanism 22A, and a second conveying mechanism 23A, which are arranged sequentially with the process chamber 11. The side wall of the loading and unloading chamber 21A is also provided with a valve, which is used as a channel for the carrier plate 13 to enter and exit the loading and unloading chamber 21A. The loading and unloading chamber 21A is provided with a first heating plate 24A arranged in parallel, which is used to preheat the substrate to be processed to ensure that the reaction temperature of the substrate to be processed can be reached quickly in the subsequent process, and to facilitate the removal of impurities adsorbed by the carrier plate 13 in the external environment. In addition, the loading and unloading chamber 21A can also maintain a high vacuum environment in the chamber through a pressure control device 16 to avoid the influence of impurity gases. The loading and unloading chamber 21A and the process chamber 11 share the entry and exit channel 111.

[0099] Meanwhile, the first conveying mechanism 22A and the second conveying mechanism 23A partially adopt roller drive to drive the carrier plate 13 in and out of the process cavity 11, and the rollers of the first conveying mechanism 22A or the second conveying mechanism 23A located in the process cavity 11 can extend and retract along the roller central axis direction.

[0100] In other embodiments, as shown in FIG3, the thin film deposition apparatus 1 further includes a loading / unloading device 2B, which is used to realize the entry and exit of the carrier plate 13 into the process chamber 11. The loading / unloading device 2B includes a loading chamber 21B, an unloading chamber 22B, and a third conveying mechanism 23B, and the loading chamber 21B, the process chamber 11, and the unloading chamber 22B are arranged sequentially. The third conveying mechanism 23B drives the carrier plate 13 to pass through the loading chamber 21B, the process chamber 11, and the unloading chamber 22B sequentially. The loading chamber 21B is equipped with a valve on its side wall, which serves as a channel for the carrier plate 13 to enter the loading chamber 21B. Two parallel second heating plates 24B are installed inside the loading chamber 21B to preheat the substrate to be processed, ensuring that the reaction temperature of the substrate can be quickly reached subsequently, and facilitating the removal of impurities adsorbed by the carrier plate in the external environment. Furthermore, the loading chamber 21B can maintain a high vacuum environment within the chamber through a pressure control device 16 to prevent the influence of impurities. The unloading chamber 22B is also equipped with a valve on its side wall, which serves as a channel for the carrier plate 13 to exit the unloading chamber 22B. The unloading chamber 22B can also control the required pressure within the chamber through the pressure control device 16. The loading chamber 21B and the unloading chamber 22B are respectively connected to the two inlet and outlet channels 111 of the process chamber 11.

[0101] Therefore, loading and unloading devices 2A and 2B with appropriate structures can be selected according to actual process requirements to meet the actual process requirements. When loading and unloading device 2A includes loading and unloading cavity 21A, first conveying mechanism 22A and second conveying mechanism 23A, the floor area of ​​thin film deposition equipment 1 can be greatly reduced, which helps to reduce production costs.

[0102] In some embodiments, as shown in FIG7, the carrier plate 13 includes a plurality of carrier frames 131 arranged in an array for placing the substrate to be processed. The carrier frame 131 may be a solid groove structure or a structure that runs through the top and bottom.

[0103] In the prior art, to avoid the phenomenon of film wrapping, i.e., when a thin film is deposited on one side of the substrate, a small amount of thin film is also formed on the other side of the substrate, the carrier frame 131 mostly adopts a solid groove structure. In this application, since the mask is partially removed in the subsequent removal process, the technical problems caused by film wrapping do not need to be considered. At the same time, considering the ability to quickly heat the substrate, the carrier frame 131 preferably adopts a vertically continuous structure. As shown in Figures 8 to 10, the carrier frame 131 adopts a vertically continuous structure. As shown in Figure 8, the carrier frame 131 is completely hollow in the center, with only the edge overlapping the substrate. This area is provided with a blocking structure 132 to support the substrate. Compared with the carrier frame 131 with a solid groove structure in the prior art, the carrier frame 131 with a vertically continuous structure can quickly heat the substrate.

[0104] Furthermore, preferably, as shown in Figures 9 and 10, the carrier frame 131 is a perforated carrier frame 131 with a graphic structure. Most of the carrier frame 131 is perforated, ensuring rapid heating of the substrate to be processed while effectively preventing fragments of the substrate from falling and affecting the process. In addition, the edge of the carrier frame 131 is provided with a blocking structure 132. By providing a blocking structure 132 at the edge of the carrier plate 13 for placing the substrate to be processed, the substrate to be processed can be effectively prevented from slipping when the carrier plate 13 is carrying it, ensuring that the substrate to be processed is confined within the carrier frame 131 during transport and processing. The carrier plate 13 also includes a tray (not shown) and a frame (not shown). The tray is located on top, with the carrier frame 131 on its surface to prevent the substrate to be processed from slipping. The frame is located below and consists of a mesh structure composed of multiple strip structures to support the tray, reducing deformation of the carrier plate 13 due to the loading of the substrate to be processed and its own weight, maintaining good flatness of the carrier plate 13.

[0105] Please refer to Figures 11 to 15. Perform steps S2 to S5: place the substrate to be processed on the carrier plate 13; transfer the carrier plate 13 into the process chamber 11; introduce process gas into the process chamber 11 through the gas diffusion assembly 14, and excite the process gas into plasma under the action of the RF power system 12, so that the process gas reacts on the surface of the substrate to form a silicon nitride thin film. The process gas includes silane and a nitrogen source, and the gas flow ratio of silane to nitrogen source is 0.01 to 0.5. During the plasma excitation process, control the RF power density to be 200 W / m. 2 ~5000W / m 2 The reaction temperature is 150℃~400℃, the pressure in the process chamber 11 is 0.5Torr~5Torr, and the vertical distance between the carrier plate 13 and the gas diffusion assembly 14 is 10mm~50mm; the carrier plate 13 is transferred out of the process chamber 11.

[0106] In some embodiments, as shown in FIG2 and FIG11 to FIG15, the thin film deposition apparatus 1 further includes a loading and unloading device 2A. The loading and unloading device 2A is used to realize the entry and exit of the carrier plate 13 into the process chamber 11. The loading and unloading device 2A includes a loading and unloading chamber 21A, a first conveying mechanism 22A and a second conveying mechanism 23A. The loading and unloading chamber 21A and the process chamber 11 are arranged sequentially. The loading and unloading device 21A sends the carrier plate 13 into the process chamber 11, specifically including:

[0107] The first conveying mechanism 22A is used to convey the carrier plate 13 from the loading and unloading cavity 21A to the process cavity 11;

[0108] Under the action of the RF power system 12, the process gas is excited into plasma, so that the process gas reacts on the surface of the substrate to be processed to form a silicon nitride thin film; at this time, the inlet and outlet channels 111 on the side wall of the process cavity 11 are in a closed state.

[0109] Transferring the carrier plate 13 out of the process cavity 11 includes:

[0110] The carrier plate 13 is transferred from the process cavity 11 back to the loading and unloading cavity 21A via the second conveying mechanism 23A.

[0111] In some embodiments, the first conveying mechanism 22A and the second conveying mechanism 23A are partially driven by rollers to drive the carrier plate 13 into and out of the process cavity 11, and the rollers of the second conveying mechanism 23A located in the process cavity 11 can extend and retract along the central axis of the rollers.

[0112] Specifically, the transfer of the carrier plate 13 from the loading / unloading cavity 21A to the process cavity 11 using the first transfer mechanism 22A includes:

[0113] The carrier plate 13 is transferred into the loading and unloading cavity 21A via the first conveying mechanism 22A. When the carrier plate 13 enters the loading and unloading cavity 21A, the valve on the side wall adjacent to the atmosphere of the loading and unloading cavity 21A is in the open state, and the inlet and outlet channel 111 on the side wall of the process cavity 11 is in the closed state. After the carrier plate 13 enters the loading and unloading cavity 21A, the valve on the side wall adjacent to the atmosphere of the loading and unloading cavity 21A and the inlet and outlet channel 111 on the side wall of the process cavity 11 are in the closed state. The first heating plate 24A is used to preheat the substrate to be processed, and the pressure control device 16 is used to evacuate the loading and unloading cavity 21A.

[0114] The carrier plate 13 is then transferred into the process chamber 11 by the first conveying mechanism 22A. At this time, the inlet and outlet channel 111 on the side wall of the process chamber 11 is in the open state. Then, the lifting device 18 is used to raise the heat support plate 17 so that the carrier plate 13 falls onto the heat support plate 17. At this time, the rollers of the second conveying mechanism 23A in the process chamber 11 are in the retracted state, with the rollers close to the side of the process chamber 11 wall, and the inlet and outlet channel 111 on the side wall of the process chamber 11 is in the closed state.

[0115] The lifting device 18 adjusts the height of the thermal support plate 17, thereby adjusting the distance between the carrier plate 13 and the gas diffusion component 14 to the required process value. Then, under the action of the RF power system 12, the process gas is excited into plasma so that the process gas reacts on the surface of the substrate to be processed to form a silicon nitride thin film, thus completing the thin film deposition process.

[0116] The process of transferring the carrier plate 13 from the process chamber 11 back into the loading / unloading chamber 21A via the second conveying mechanism 23A specifically includes:

[0117] The lifting device 18 adjusts the height of the hot support plate 17, and the rollers of the second conveying mechanism 23A extend into the process cavity 11, lowering the height of the hot support plate 17 so that the carrier plate 13 located on the hot support plate 17 falls onto the rollers of the second conveying mechanism 23A.

[0118] Specifically, extending the rollers of the second conveying mechanism 23A into the process cavity 11 so that the carrier plate 13 falls onto the rollers of the second conveying mechanism 23A may include: raising the thermal support plate 17 above the rollers of the second conveying mechanism 23A using a lifting device 18, extending the rollers of the second conveying mechanism 23A into the process cavity 11, and lowering the thermal support plate 17 using the lifting device 18 so that the carrier plate 13 falls onto the rollers of the second conveying mechanism 23A.

[0119] The carrier plate 13, which falls onto the roller of the second conveying mechanism 23A, is transferred from the process chamber 11 to the loading and unloading chamber 21A via the second conveying mechanism 23A.

[0120] In some other embodiments, as shown in FIG3, the thin film deposition apparatus 1 further includes a loading / unloading device 2B, which is used to realize the entry and exit of the carrier plate 13 into the process chamber 11. The loading / unloading device 2B includes a loading chamber 21B, an unloading chamber 22B, and a third conveying mechanism 23B, wherein the loading chamber 21B, the process chamber 11, and the unloading chamber 22B are arranged sequentially.

[0121] Sending the carrier plate 13 into the process cavity 11 includes:

[0122] The carrier plate 13 is transferred from the loading cavity 21B to the process cavity 11 using the third transfer mechanism 23B. Specifically, this transfer includes: transferring the carrier plate 13 into the loading cavity 21B via the third transfer mechanism 23B, and then into the process cavity 11 via the third transfer mechanism 23B. When the carrier plate 13 enters the loading cavity 21B, the valve on the side wall adjacent to the atmosphere of the loading cavity 21B is opened; after the carrier plate 13 enters the loading cavity 21B, the valve on the side wall adjacent to the atmosphere of the loading cavity 21B is closed, and the substrate to be processed is preheated using the second heating plate 24B. A vacuum is evacuated from the loading cavity 21B using the pressure control device 16; when the carrier plate 13 enters the process cavity 11, the inlet / outlet channel 111 on one side of the process cavity 11 is opened; after the carrier plate 13 enters the process cavity 11, the inlet / outlet channel 111 on one side of the process cavity 11 is closed.

[0123] Under the action of the RF power system 12, the process gas is excited into plasma, so that the process gas reacts on the surface of the substrate to be processed to form a silicon nitride thin film.

[0124] Transferring the carrier plate 13 out of the process cavity 11 includes:

[0125] The carrier plate 13 is transferred from the process cavity 11 to the unloading cavity 22B via the third conveying mechanism 23B. When the carrier plate 13 leaves the process cavity 11, the inlet / outlet channel 111 on the other side of the process cavity 11 is opened.

[0126] In some embodiments, process gas is introduced into the process chamber 11 through the gas diffusion assembly 14, including:

[0127] Process gas is introduced from the outside, i.e., the gas supply system 19, into the gas distribution area 143, and diffused into the area below the gas diffuser 142 in the process chamber 11 through the gas diffusion channel.

[0128] In some embodiments, the nitrogen source includes at least one of nitrogen and ammonia, or other suitable nitrogen source gases may be selected depending on the actual situation.

[0129] In some embodiments, when the introduced process gas contains silane and nitrogen, the gas flow rate ratio of the introduced silane to nitrogen is controlled to be 0.01 to 0.5.

[0130] In other embodiments, when the introduced process gas contains silane and ammonia, the gas flow rate ratio of the introduced silane to ammonia is controlled to be 0.01 to 0.3.

[0131] The gas flow rate ratio of silane to nitrogen source determines the stoichiometry of the formed thin film, which in turn affects the electrical and optical properties of the film. Therefore, this application, by precisely controlling the gas flow rate ratio of silane to nitrogen source, helps to control the diffusion and deposition rates of silane and nitrogen source, improves the uniformity and density of the film, and achieves high-quality film deposition.

[0132] For example, when process gas is introduced into the process chamber 11, the depth of the recess at the center of the side of the gas diffuser 142 away from the back plate 141 can be adjusted by the adjustment part 144 to achieve uniform deposition of the thin film.

[0133] Furthermore, by further controlling the RF power density, the controlled reaction temperature on the surface of the substrate to be processed, the vertical distance between the carrier plate 13 and the gas diffusion assembly 14, and the pressure inside the process chamber 11 when the process gas is introduced, the process conditions for forming the thin film are optimized, thereby further improving the quality of the formed thin film.

[0134] It should be understood that although the steps in the flowchart of Figure 1 are shown sequentially according to the arrows, these steps are not necessarily executed in the order indicated by the arrows. Unless explicitly stated herein, there is no strict order restriction on the execution of these steps, and they can be executed in other orders. Moreover, at least some of the steps in Figure 1 may include multiple steps or multiple stages, which are not necessarily completed at the same time, but can be executed at different times. The execution order of these steps or stages is not necessarily sequential, but can be performed alternately or in turn with other steps or at least some of the steps or stages in other steps.

[0135] Please continue to refer to Figures 2 and 3. This application also provides a thin film deposition apparatus 1, which is used for thin film deposition by the thin film deposition method described above. The thin film deposition apparatus 1 includes any one of loading and unloading device 2A or loading and unloading device 2B, a process cavity 11, an RF power supply system 12, and a carrier plate 13.

[0136] In some embodiments, the process chamber 11 is further provided with a gas diffusion component 14, and the thin film deposition equipment also includes an electromagnetic shield 15, a thermal support plate 17, a lifting device 18, a pressure control device 16, and a gas supply system 19. It should be noted that the detailed description of the structure of each part of the thin film deposition equipment 1 can be found in the structure of each part of the thin film deposition equipment 1 described in the above embodiments of the thin film deposition method, and will not be repeated here.

[0137] The thin film deposition equipment 1 used deposits silicon nitride thin films, which is suitable for large-area deposition. It can also adjust the required process parameters according to different process requirements and film quality requirements to obtain films with optimal performance and maximize production capacity.

[0138] In the description of this specification, the references to terms such as "some embodiments," "other embodiments," "ideal embodiments," etc., refer to specific features, structures, materials, or characteristics described in connection with that embodiment or example that are included in at least one embodiment or example of this application. In this specification, the illustrative descriptions of the above terms do not necessarily refer to the same embodiments or examples.

[0139] The technical features of the above embodiments can be combined in any way. For the sake of brevity, not all possible combinations of the technical features of the above embodiments are described. However, as long as there is no contradiction in the combination of these technical features, they should be considered to be within the scope of this specification.

[0140] The embodiments described above are merely illustrative of several implementation methods of this application, and while the descriptions are relatively specific and detailed, they should not be construed as limiting the scope of the patent application. It should be noted that those skilled in the art can make various modifications and improvements without departing from the concept of this application, and these all fall within the protection scope of this application. Therefore, the protection scope of this patent application should be determined by the appended claims.

Claims

1. A thin film deposition method, characterized in that, Includes the following steps: Provides a substrate to be processed and a thin film deposition equipment. The thin film deposition equipment includes at least one process chamber, an RF power system and a carrier board. The frequency of the RF power system is configured to be 0.1MHz to 100MHz. The process chamber is also provided with a gas diffusion component. The substrate to be processed is placed on the carrier plate; The carrier plate is transferred into the process cavity; Process gas is introduced into the process chamber through the gas diffusion assembly, and under the action of the radio frequency power system, the process gas is excited into plasma, so that the process gas reacts on the surface of the substrate to be processed to form a silicon nitride thin film. The process gas includes silane and a nitrogen source, and the gas flow ratio of silane to nitrogen source is 0.01 to 0.

5. During the plasma excitation process, the radio frequency power density is controlled to be 200 W / m. 2 ~5000W / m 2 The reaction temperature is 150℃~400℃, the pressure in the process chamber is 0.5Torr~5Torr, and the vertical distance between the carrier plate and the gas diffusion assembly is 10mm~50mm. The carrier plate is transferred out of the process cavity.

2. The thin film deposition method according to claim 1, characterized in that, The nitrogen source includes at least one of nitrogen and ammonia. When the process gas introduced contains silane and nitrogen, the gas flow rate ratio of silane to nitrogen is controlled to be 0.01 to 0.

5. When the process gas introduced contains silane and ammonia, the gas flow rate ratio of silane to ammonia is controlled to be 0.01 to 0.

3.

3. The thin film deposition method according to claim 1, characterized in that, The thin film deposition apparatus also includes: A heat support plate is located inside the process cavity. The heat support plate is used to support the carrier plate and heat the substrate to be processed to the reaction temperature. A lifting device is used to lift the thermal support plate to support the carrier plate and adjust the vertical distance between the carrier plate and the gas diffusion assembly; A pressure control device is used to control the pressure inside the process chamber.

4. The thin film deposition method according to claim 1, characterized in that, The gas diffusion assembly includes at least a backplane connected to the radio frequency power system and a gas diffuser mounted on the backplane. The backplane and the gas diffuser together form a gas distribution area, and the gas diffuser is provided with multiple gas diffusion channels. The process gas is introduced into the process chamber through the gas diffusion assembly, including: The process gas is introduced into the gas distribution area from the outside, and diffused into the area below the gas diffuser in the process chamber through the gas diffusion channel.

5. The thin film deposition method according to claim 4, characterized in that, The center of the gas diffuser on the side away from the back plate is recessed relative to the edge, and the recessed shape on the side of the gas diffuser away from the back plate is arc-shaped or stepped.

6. The thin film deposition method according to claim 4, characterized in that, The gas diffusion assembly further includes an adjustment section that extends through the back plate and is connected to the gas diffuser. The adjustment section is used to form a recess at the center of the side of the gas diffuser away from the back plate and to adjust the depth of the recess at the center of the side of the gas diffuser away from the back plate.

7. The thin film deposition method according to claim 4, characterized in that, A medium plate is also installed on the gas diffuser, and the medium plate is located below the side of the gas diffuser away from the back plate. When the side of the gas diffuser away from the back plate has a recess, there is a gap between the medium plate and the side of the gas diffuser away from the back plate. The distance of the gap gradually decreases from the center to the edge of the gas diffuser.

8. The thin film deposition method according to claim 1, characterized in that, The thin film deposition equipment further includes a loading and unloading device for moving the carrier plate into and out of the process chamber. The loading and unloading device includes a loading / unloading chamber, a first conveying mechanism, and a second conveying mechanism, which are arranged sequentially with the process chamber. Sending the carrier plate into the process cavity includes: The first conveying mechanism is used to convey the carrier plate from the loading / unloading cavity to the process cavity; Under the action of the radio frequency power system, the process gas is excited into plasma, so that the process gas reacts on the surface of the substrate to be processed to form the silicon nitride thin film; Transferring the carrier plate out of the process cavity includes: The carrier plate is transferred from the process cavity back to the loading and unloading cavity via the second conveying mechanism.

9. The thin film deposition method according to claim 8, characterized in that, The first conveying mechanism and the second conveying mechanism are partially equipped with roller drive to drive the carrier plate in and out of the process cavity, and the rollers of the first conveying mechanism or the second conveying mechanism located in the process cavity can extend and retract along the central axis of the rollers. Specifically, using the first conveying mechanism to transfer the carrier plate from the loading / unloading cavity to the process cavity includes: transferring the carrier plate into the loading / unloading cavity through the first conveying mechanism; The carrier plate is then transferred into the process cavity via the first conveying mechanism. The process of transferring the carrier plate from the process chamber back to the loading / unloading chamber via the second conveying mechanism specifically includes: Extend the rollers of the second conveying mechanism into the process cavity and lower the heat support plate so that the carrier plate on the heat support plate falls onto the rollers of the second conveying mechanism. The carrier plate that falls onto the roller of the second conveying mechanism is transferred from the process chamber to the loading and unloading chamber through the second conveying mechanism.

10. The thin film deposition method according to claim 1, characterized in that, The thin film deposition equipment further includes a loading and unloading device for moving the carrier plate into and out of the process chamber. The loading and unloading device includes a loading chamber, an unloading chamber, and a third conveying mechanism, with the loading chamber, the process chamber, and the unloading chamber arranged sequentially. Sending the carrier plate into the process cavity includes: The carrier plate is transferred from the loading cavity to the process cavity using the third conveying mechanism. Under the action of the radio frequency power system, the process gas is excited into plasma, so that the process gas reacts on the surface of the substrate to be processed to form the silicon nitride thin film; Transferring the carrier plate out of the process cavity includes: The carrier plate is transferred from the process chamber to the unloading chamber via the third conveying mechanism.

11. The thin film deposition method according to claim 1, characterized in that, The carrier plate includes multiple carrier frames arranged in an array, each carrier frame having multiple hollow structures arranged in an array, and / or, the edges of the carrier frames having blocking structures for placing the substrate to be processed.

12. A thin film deposition apparatus for performing thin film deposition using the thin film deposition method according to any one of claims 1 to 11, the thin film deposition apparatus comprising a loading and unloading device, a process chamber, an RF power supply system, and a carrier plate.

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