Plasma apparatus and plasma deposition device

Abstract

The present application provides a plasma apparatus and a plasma deposition device. The apparatus comprises: a plasma reaction chamber comprising an upper electrode plate and a lower electrode plate, wherein a voltage difference is present between the upper and lower electrode plates so as to generate plasma; and magnetic materials including: first magnetic materials arranged above a first edge region of the upper electrode plate along a first side of the upper electrode plate in the length direction and arranged below a first edge region of the lower electrode plate along a first side of the lower electrode plate in the length direction. In this way, magnetic materials are used to construct a non-uniform magnetic field in a plasma reaction chamber to change the plasma density at the edge of the plasma reaction chamber, so that a plasma peak value occurring at the edge of the plasma reaction chamber can be reduced during large-area discharge of CCP, thereby achieving uniform distribution of plasma in the whole plasma reaction chamber.

Description

Plasma devices and plasma deposition equipment

[0001] This application claims priority to Chinese Patent Application No. 202510097550.8, filed on January 21, 2025, entitled "Plasma Device and Plasma Deposition Equipment", the entire contents of which are incorporated herein by reference. Technical Field

[0002] This application relates to the field of plasma processing technology, and more specifically, to a plasma device and a plasma deposition apparatus. Background Technology

[0003] Plasma processing technology is a key technology widely used in industries such as semiconductors and photovoltaics. Plasma-enhanced chemical vapor deposition (PECVD) and plasma-enhanced atomic layer deposition (PEALD) are two common plasma processing techniques, which typically require large-area capacitively coupled plasma (CCP) radio frequency discharge during the process. This discharge method can effectively improve production efficiency when processing large-area solar cells or related coating requirements. However, during large-area CCP discharge, factors such as edge effects, standing wave effects, and skin effects can cause plasma peaks at the chamber edges, affecting the plasma uniformity of the entire plate and consequently impacting the overall coating effect.

[0004] To address this issue, current approaches primarily focus on optimizing discharge parameters, such as reducing discharge power and operating pressure, and increasing the spacing between discharge electrodes, to improve plasma uniformity within the cavity. However, while these methods enhance plasma diffusion and improve distribution uniformity, they also alter the overall plasma density within the cavity, impacting process operation and reducing industrial production efficiency. Furthermore, some solutions modify electrode design, such as adding dielectric layers between electrodes or connecting power electrodes in parallel with capacitors, to suppress standing wave effects and improve plasma distribution. However, these solutions often require complex control systems and precise operation, making them difficult to implement in actual production. Summary of the Invention

[0005] To at least partially overcome the problems existing in related technologies, embodiments of this application provide a plasma device, including: a plasma reaction chamber, the plasma reaction chamber including an upper electrode plate and a lower electrode plate, the upper electrode plate and the lower electrode plate having a voltage difference to generate plasma, the upper electrode plate and the lower electrode plate each having at least one side; and a magnetic material, including: a first magnetic material disposed above a first edge region of the upper electrode plate along a first side direction of the upper electrode plate and disposed below the first edge region of the lower electrode plate along a first side direction of the lower electrode plate, wherein the first magnetic material has a dimension in the length direction greater than its dimension in the width direction, the first edge region of the upper electrode plate is the region of the upper electrode plate close to the first side of the upper electrode plate, and the first edge region of the lower electrode plate is the region of the lower electrode plate close to the first side of the lower electrode plate.

[0006] Furthermore, both the upper electrode plate and the lower electrode plate are quadrilateral electrode plates. The magnetic material further includes: a first magnetic material disposed above the second edge region of the upper electrode plate along the second side direction of the upper electrode plate and disposed below the second edge region of the lower electrode plate along the second side direction of the lower electrode plate, wherein the first magnetic material is a bar magnetic material, the second edge region of the upper electrode plate is the region of the upper electrode plate close to the second side of the upper electrode plate, and the second edge region of the lower electrode plate is the region of the lower electrode plate close to the second side of the lower electrode plate.

[0007] Furthermore, the magnetic material further includes: a first magnetic material disposed above the third edge region and the fourth edge region of the upper electrode plate along the third side direction and the fourth side direction of the upper electrode plate respectively, and disposed below the third edge region and the fourth edge region of the lower electrode plate along the third side direction and the fourth side direction of the lower electrode plate respectively, wherein the third edge region and the fourth edge region of the upper electrode plate are regions of the upper electrode plate close to the third side and the fourth side of the upper electrode plate respectively, and the third edge region and the fourth edge region of the lower electrode plate are regions of the lower electrode plate close to the third side and the fourth side of the lower electrode plate respectively.

[0008] Furthermore, the side of the first magnetic material located above the upper electrode plate facing the upper electrode plate is the first pole, and the side facing away from the upper electrode plate is the second pole; the side of the first magnetic material located below the lower electrode plate is the first pole, and the side facing the lower electrode plate is the second pole.

[0009] Furthermore, the distance between the first magnetic material located above the upper electrode plate and the upper electrode plate is 1-30mm, and the distance between the first magnetic material located below the lower electrode plate and the lower electrode plate is 1-30mm; the distance between the first magnetic material and its adjacent first side, second side, third side, or fourth side is 2-40mm.

[0010] Furthermore, the distances between the four sides of the upper electrode plate or the lower electrode plate and the center position of the upper electrode plate or the lower electrode plate may be the same or different, wherein the magnetic flux of the first magnetic material corresponding to the side farther away from the center position of the upper electrode plate or the lower electrode plate is greater.

[0011] Furthermore, the magnetic material also includes a second magnetic material disposed above the first edge region of the upper electrode plate along the first side direction of the upper electrode plate and disposed below the first edge region of the lower electrode plate along the first side direction of the lower electrode plate. The second magnetic material is closer to the center of the upper electrode plate or the lower electrode plate than the first magnetic material, and the magnetic flux of the second magnetic material is lower than or equal to the magnetic flux of the first magnetic material.

[0012] Furthermore, both the first electrode plate and the second electrode plate are rectangular electrode plates, with the first side and the second side being two non-adjacent opposite sides of the rectangular electrode plate. The magnetic material further includes a second magnetic material disposed above the first edge region and the second edge region of the upper electrode plate along the first side and the second side of the upper electrode plate, respectively, and disposed below the first edge region and the second edge region of the lower electrode plate along the first side and the second side of the lower electrode plate, respectively. Also included are second magnetic materials disposed above the first edge region and the second edge region of the upper electrode plate along the first side and the second side of the upper electrode plate, respectively. A third magnetic material is disposed below the first edge region and the second edge region of the lower electrode plate along the first side direction and the second side direction, respectively. The first magnetic material, the second magnetic material, and the third magnetic material are all permanent magnets. In each of the first edge region and the second edge region, the second magnetic material is closer to the middle position of the upper electrode plate or the lower electrode plate than the first magnetic material, and the third magnetic material is closer to the middle position of the upper electrode plate or the lower electrode plate than the second magnetic material. The magnetic flux of the second magnetic material is lower than or equal to the magnetic flux of the first magnetic material, and the magnetic flux of the third magnetic material is lower than the magnetic flux of the second magnetic material.

[0013] Further, within each of the first edge regions and the second edge regions, the side of the first magnetic material located above the upper electrode plate facing the upper electrode plate is the first pole, and the side facing away from the upper electrode plate is the second pole; the side of the first magnetic material located below the lower electrode plate is the first pole facing away from the lower electrode plate, and the side facing the lower electrode plate is the second pole; the side of the second magnetic material located above the upper electrode plate is the first pole facing away from the upper electrode plate, and the side facing the upper electrode plate is the second pole; the side of the second magnetic material located below the lower electrode plate is the first pole facing the lower electrode plate, and the side facing away from the lower electrode plate is the second pole; the side of the third magnetic material facing the second magnetic material is the first pole, and the side facing away from the second magnetic material is the second pole.

[0014] Furthermore, the distance between the first magnetic material, the second magnetic material, and the third magnetic material and their adjacent upper or lower electrode plates is 1-30 mm; the distance between the first magnetic material and its adjacent first or second side is 2-40 mm; the distance between the first magnetic material and its adjacent second magnetic material is 5-50 mm; and the distance between the second magnetic material and its adjacent third magnetic material is 10-80 mm.

[0015] Furthermore, along the direction of the third side of the rectangular electrode plate perpendicular to the first side, the cross-sectional area of ​​the second magnetic material is the same as that of the first magnetic material, and the cross-sectional area of ​​the third magnetic material is greater than that of the first magnetic material.

[0016] Furthermore, each of the first magnetic material, the second magnetic material, and the third magnetic material is composed of a plurality of small magnets arranged along the first side or the second side.

[0017] Furthermore, the magnetic material further includes: a side magnetic material disposed in the side region of the plasma reaction cavity along the first side direction in the length direction, wherein the side region of the plasma reaction cavity is the region located outside the first side surface of the plasma reaction cavity, and the first side surface is the side surface of the plasma reaction cavity located between the upper electrode plate and the lower electrode plate and corresponding to the first side surface.

[0018] Furthermore, the magnetic flux of the side magnetic material is higher than or equal to the magnetic flux of the first magnetic material.

[0019] Further, both the first electrode plate and the second electrode plate are rectangular electrode plates, with the first side and the second side being two non-adjacent opposite sides of the rectangular electrode plate. The magnetic material further includes: first-side magnetic material disposed in the first and second side regions of the plasma reaction cavity along the first and second side directions of the upper electrode plate, respectively; and second-side magnetic material disposed in the third and fourth side regions of the plasma reaction cavity along the first and second side directions of the lower electrode plate, respectively. The first side region is located outside the first side of the plasma reaction cavity and between the lateral extension regions of the upper and lower electrode plates, and close to the upper electrode plate. The second side region is located outside the second side of the plasma reaction cavity and between the lateral extension regions of the upper and lower electrode plates, and close to the upper electrode plate. The region between the lateral extension regions of the upper electrode plate and the lower electrode plate and close to the upper electrode plate; the third side region is located outside the first side of the plasma reaction chamber and between the lateral extension regions of the upper electrode plate and the lower electrode plate and close to the lower electrode plate; the fourth side region is located outside the second side of the plasma reaction chamber and between the lateral extension regions of the upper electrode plate and the lower electrode plate and close to the lower electrode plate; the first side is the side of the plasma reaction chamber located between the upper electrode plate and the lower electrode plate and corresponding to the first side; the second side is the side of the plasma reaction chamber located between the upper electrode plate and the lower electrode plate and corresponding to the second side; the first magnetic material, the first side magnetic material, and the second side magnetic material are all permanent magnets.

[0020] Furthermore, the magnetic flux of both the first side magnetic material and the second side magnetic material is higher than or equal to the magnetic flux of the first magnetic material.

[0021] Furthermore, the side of the first magnetic material located above the upper electrode plate facing the upper electrode plate is the first pole, and the side facing away from the upper electrode plate is the second pole; the side of the first magnetic material located below the lower electrode plate is the first pole facing away from the lower electrode plate, and the side facing the lower electrode plate is the second pole; the side of the first side magnetic material is the first pole facing away from the plasma reaction cavity, and the side facing the plasma reaction cavity is the second pole; the side of the second side magnetic material is the first pole facing the plasma reaction cavity, and the side facing away from the plasma reaction cavity is the second pole.

[0022] Furthermore, the distance between the first magnetic material and its adjacent upper or lower electrode plate is 1-30 mm, the distance between the first and second side magnetic materials and their adjacent sides of the plasma reaction chamber is 1-40 mm, the distance between the first magnetic material and its adjacent first or second side is 2-40 mm, and the distance between the first and second side magnetic materials and their adjacent first or second side is 2-40 mm.

[0023] Furthermore, along the direction of the third side perpendicular to the first side of the rectangular electrode plate, the cross-sectional area of ​​the first side magnetic material and the second side magnetic material is the same as the cross-sectional area of ​​the first magnetic material.

[0024] Furthermore, the magnetic material is an electromagnet, used to pass direct current or alternating current during the plasma generation process.

[0025] Furthermore, the upper electrode plate and the lower electrode plate are quadrilaterals with a length of 50-500mm and a width of 10-500mm, and the distance between the upper electrode plate and the lower electrode plate is 10-100mm.

[0026] This application also provides a plasma deposition apparatus, comprising: a plasma device as described above; an outer cavity surrounding the plasma device; and an inlet disposed on the outer cavity for introducing reactive gas.

[0027] According to the plasma device and plasma deposition apparatus of the present application, magnetic materials are disposed above the edge region of the upper electrode plate and below the edge region of the lower electrode plate in the plasma reaction cavity. The magnetic materials are used to construct a non-uniform magnetic field in the plasma reaction cavity, thereby changing the plasma density at the edge of the plasma reaction cavity. This can reduce the plasma peak appearing at the edge of the plasma reaction cavity during large-area CCP discharge, making the plasma distribution in the entire plasma reaction cavity more uniform. Attached Figure Description

[0028] The accompanying drawings, which are part of the specification of this application, illustrate embodiments of the present application and are used together with the description of the specification to illustrate the principles of the present application.

[0029] Figure 1 shows a front cross-sectional view of a plasma device according to an embodiment of this application.

[0030] Figure 2 shows a front cross-sectional view of a plasma device according to a first embodiment of this application.

[0031] Figure 3 shows the top and bottom views of the plasma device shown in Figure 2.

[0032] Figure 4 shows a front cross-sectional view of another plasma device according to the first embodiment of this application.

[0033] Figure 5 shows the top and bottom views of the plasma device shown in Figure 4.

[0034] Figure 6 shows a front cross-sectional view of another plasma device according to the first embodiment of this application.

[0035] Figure 7 shows the top and bottom views of the plasma device shown in Figure 6.

[0036] Figure 8 shows the distribution of the equivalent electric field coils and magnetic field lines in the plasma device shown in Figure 6 when the magnetic material is an electromagnet.

[0037] Figure 9 shows a front cross-sectional view of a plasma device according to a second embodiment of this application.

[0038] Figure 10 shows the top and bottom views of the plasma device shown in Figure 9.

[0039] Figure 11 shows a top view and a bottom view of a first magnetic material, a second magnetic material, and a third magnetic material composed of multiple small magnets.

[0040] Figure 12 shows a schematic diagram of the magnetic field distribution during plasma discharge in a specific application example of the plasma device shown in Figure 9.

[0041] Figure 13 shows a front cross-sectional view of a plasma device according to a third embodiment of this application.

[0042] Figure 14 shows the top and bottom views of the plasma device shown in Figure 13.

[0043] Figure 15 shows a schematic diagram of the magnetic field distribution during plasma discharge in a specific application example of the plasma device shown in Figure 13.

[0044] Figure 16 shows a schematic diagram of the electron density distribution in the plasma reaction chamber without the addition of magnetic materials.

[0045] Figure 17 shows a schematic diagram of the electron density distribution within the plasma reaction chamber in a specific application example of the plasma device shown in Figure 13.

[0046] Figure 18 shows a comparative analysis of the radial electron density distribution at the center of the cavity without the addition of magnetic materials and the radial electron density distribution at the center of the cavity in a specific application example of the plasma device shown in Figure 13.

[0047] Figure 19 shows a schematic diagram of a plasma deposition apparatus according to a fourth embodiment of this application. Detailed Implementation

[0048] To make the objectives, technical solutions, and advantages of the embodiments of this application clearer, the spirit of the content disclosed in this application will be clearly explained below with reference to the accompanying drawings and detailed description. After understanding the embodiments of this application, any person skilled in the art can make changes and modifications based on the technology taught in this application without departing from the spirit and scope of this application.

[0049] The illustrative embodiments and descriptions provided in this application are for explaining the application, but are not intended to limit the application. Furthermore, elements / components using the same or similar reference numerals in the drawings and embodiments are used to represent the same or similar parts.

[0050] The terms “first,” “second,” etc., used in this document are not intended to specifically refer to order or sequence, nor are they used to limit this application; they are merely used to distinguish elements or operations described using the same technical terms.

[0051] The terms “include,” “including,” “have,” “contain,” etc., used in this article are all open-ended terms, meaning that they include but are not limited to.

[0052] The term "and / or" as used herein includes any or all of the things mentioned.

[0053] The term "multiple" in this article includes "two" and "more than two"; the term "multiple groups" in this article includes "two groups" and "more than two groups".

[0054] Certain terms used to describe this application will be discussed below or elsewhere in this specification to provide additional guidance to those skilled in the art in describing the application.

[0055] Figure 1 shows a schematic diagram of a plasma device according to an embodiment of this application.

[0056] As shown in Figure 1, the plasma device includes a plasma reaction chamber. The plasma reaction chamber has an upper electrode plate 1 and a lower electrode plate 2, which have a voltage difference to generate plasma. The plasma device may also include a gas inlet to introduce reactive gas. Specifically, in application, a radio frequency power supply is applied to the upper electrode plate 1 and the lower electrode plate 2, generating a high-frequency electric field between the upper and lower electrode plates. Gas molecules are excited and ionized in this high-frequency electric field, forming plasma. This process can also be referred to as the CCP radio frequency discharge process.

[0057] During CCP radio frequency discharge, due to the lower pressure, the mean free path of electrons satisfies the migration and diffusion of electrons within the cavity. High-energy electrons are generated near the electrode plates and diffuse towards the central region, colliding to generate and maintain plasma. During this process, electrons near the electrode plates collide with particles in the central region to exchange energy. A larger plasma reaction chamber size allows for a higher number of substrates to be processed in a single batch; a higher frequency of the radio frequency power supply used to generate the plasma reduces the time required to process a single batch of substrates and significantly reduces damage to the substrate caused by bombardment of high-energy ions in the plasma. However, increasing the electrode plate size and discharge frequency introduces problems such as edge effects, skin effects, and standing wave effects, which can cause plasma peaks at the edges of the reaction chamber, thus affecting the overall plasma uniformity of the plate.

[0058] In view of this, considering the electromagnetic effect and the chamber edge discharge effect during CCP discharge, this application provides a plasma device in which magnetic materials are arranged in the edge region of the upper and lower electrode plates. By changing the plasma density at the edge of the plasma reaction chamber through a suitable magnetic field distribution, the plasma peak appearing at the edge of the plasma reaction chamber can be reduced during large-area CCP discharge, making the plasma distribution in the entire plasma reaction chamber more uniform.

[0059] According to a first embodiment of this application, a plasma device includes: a plasma reaction chamber, the plasma reaction chamber including an upper electrode plate and a lower electrode plate, the upper electrode plate and the lower electrode plate having a voltage difference to generate plasma, and both the upper electrode plate and the lower electrode plate having at least one side; and a magnetic material, including: a first magnetic material disposed above a first edge region of the upper electrode plate along a first side direction of the upper electrode plate and disposed below a first edge region of the lower electrode plate along a first side direction of the lower electrode plate. The first magnetic material has a dimension in the length direction that is larger than its dimension in the width direction. The first edge region of the upper electrode plate is the region of the upper electrode plate close to the first side of the upper electrode plate, and the first edge region of the lower electrode plate is the region of the lower electrode plate close to the first side of the lower electrode plate.

[0060] This application describes the orientation of the plasma reaction chamber when it is placed horizontally and upright. Specifically, the plasma reaction chamber includes two electrode plates positioned opposite each other, referred to here as the upper electrode plate and the lower electrode plate. Here, "upper" and "lower" refer to the vertical orientation of the upper electrode plate being above and the lower electrode plate being below when the plasma reaction chamber is placed horizontally and upright, or it can refer to the vertical orientation of the plasma reaction chamber in the discharge direction. When the plasma reaction chamber is placed vertically or tilted, "upper" and "lower" can be considered to refer to the vertical orientation of the plasma reaction chamber in the discharge direction. That is, the upper and lower electrode plates still refer to the upper and lower electrode plates when it is placed horizontally and upright, but the orientation should change with the change of the orientation of the plasma reaction chamber. For example, when the plasma reaction chamber is placed upside down, according to the up-down positional relationship in the discharge direction of the plasma reaction chamber, the upper electrode plate is located below and the lower electrode plate is located above. At this time, "above" the upper electrode plate should be changed to "below" the upper electrode plate, and "below" the lower electrode plate should be changed to "above" the lower electrode plate.

[0061] Similarly, in this application, when the plasma reaction chamber is placed horizontally, the sides of the upper and lower electrode plates refer to the sides of the upper surface of the upper electrode plate and the lower surface of the lower electrode plate, respectively. The first edge region of the upper electrode plate refers to a region on the upper surface of the upper electrode plate, and the first edge region of the lower electrode plate refers to a region on the lower surface of the lower electrode plate. When the plasma reaction chamber is placed vertically or at an angle, the orientation relationship should change accordingly. For example, when the plasma reaction chamber is placed upside down, the sides of the upper and lower electrode plates refer to the sides of the lower surface of the upper electrode plate and the upper surface of the lower electrode plate, respectively. The first edge region of the upper electrode plate refers to a region on the lower surface of the upper electrode plate, and the first edge region of the lower electrode plate refers to a region on the upper surface of the lower electrode plate. Here, the upper and lower surfaces refer to the surfaces of the electrode plates facing upwards or downwards.

[0062] Furthermore, "set above" and "set below" refer to being located above or below in the vertical direction, that is, directly above or directly below. For example, "set above the first edge region of the upper electrode plate" means being located directly above the first edge region, excluding the area above the oblique side extending vertically beyond the first edge region.

[0063] In the above embodiments, magnetic material is disposed at the edge regions of the upper and lower electrode plates to utilize the magnetic field generated by the magnetic material to alter the plasma distribution within the plasma reaction chamber. Specifically, during large-area CCP discharge, the magnetic field generated by the magnetic material causes electrons to undergo helical motion due to the Lorentz force when passing perpendicularly through magnetic field lines. When the magnetic field is weak, the Lorentz force increases the electron's path length, increases the electron collision frequency, and improves the plasma density. Conversely, when the magnetic field is strong enough, the Lorentz force reduces the electron's cyclotron radius and mean free path, thereby decreasing the electron collision frequency. Therefore, in this embodiment, the magnetic field generated by the magnetic material can, on the one hand, hinder the migration and diffusion of high-energy electrons generated by the electrode plate edge discharge, and on the other hand, reduce the plasma collision generation rate, ultimately weakening the plasma edge peak.

[0064] Figure 2 shows a front sectional view of a plasma device according to a first embodiment of this application, and Figure 3 shows a top view and a bottom view of the plasma device shown in Figure 2. As shown in Figures 2 and 3, the plasma device includes a plasma reaction chamber and magnetic materials. The plasma reaction chamber includes an upper electrode plate 1 and a lower electrode plate 2. In the examples of Figures 2 and 3, both the upper electrode plate 1 and the lower electrode plate 2 are quadrilaterals, with the first side being a short side of the quadrilateral. Specifically, the first side of the upper electrode plate 1 is the first short side 11, and the first side of the lower electrode plate 2 is the first short side 21. The first magnetic material 3 includes a first magnetic material disposed above the first edge region of the upper electrode plate along the direction of the first short side 11 of the upper electrode plate and a first magnetic material disposed below the first edge region of the lower electrode plate along the direction of the first short side 21 of the lower electrode plate. The first edge region of the upper electrode plate 1 is the region of the upper electrode plate 1 near the first short side 11, and the first edge region of the lower electrode plate 2 is the region of the lower electrode plate 2 near the first short side 21. The dimension of the first magnetic material 3 in the length direction, that is, the dimension along the first short side, is greater than the dimension in the width direction, that is, the dimension perpendicular to the first short side.

[0065] In the above embodiment, a magnetic material is provided in the edge region corresponding to a short side of the upper and lower electrode plates, thereby weakening the plasma edge peak near the edge region.

[0066] Figure 4 shows a front sectional view of another plasma device according to the first embodiment of this application, and Figure 5 shows a top view and a bottom view of the plasma device shown in Figure 4. As shown in Figures 4 and 5, both the upper electrode plate 1 and the lower electrode plate 2 of the plasma reaction chamber are circular, and the first side is the circumferential side of the circle. The first magnetic material 3 includes a first magnetic material disposed above the first edge region of the upper electrode plate along the circumferential side direction of the upper electrode plate and a first magnetic material disposed below the first edge region of the lower electrode plate along the circumferential side direction of the lower electrode plate. The first edge region of the upper electrode plate 1 is the region of the upper electrode plate 1 near the circumferential side, and the first edge region of the lower electrode plate 2 is the region of the lower electrode plate 2 near the circumferential side. In this application, the length direction of the magnetic material is the direction in which the magnetic material extends. Therefore, the dimension of the first magnetic material 3 in the length direction, that is, the dimension along the circumferential side direction, is greater than the dimension in the width direction, that is, the dimension from the circumferential side to the center.

[0067] In the above embodiment, magnetic material is provided in the edge region corresponding to the circumferential side of the upper and lower electrode plates, thereby weakening the plasma edge peak at the circular edge region.

[0068] As can be seen from the above, when the electrode plate is circular, the electromagnetic material can achieve comprehensive magnetic field edge coverage by placing it on one circumferential side, thus enabling plasma edge peak suppression at the edges of the plasma reaction cavity. However, when the electrode plate is, for example, quadrilateral, only the plasma edge peak suppression on the side covered by the electromagnetic material can be achieved. Therefore, in one embodiment, when both the upper and lower electrode plates are quadrilateral electrode plates, the magnetic material further includes: a first magnetic material disposed above the second edge region of the upper electrode plate along the second side direction of the upper electrode plate and below the second edge region of the lower electrode plate along the second side direction of the lower electrode plate, wherein the first magnetic material is a bar magnetic material, the second edge region of the upper electrode plate is the region of the upper electrode plate near the second side of the upper electrode plate, and the second edge region of the lower electrode plate is the region of the lower electrode plate near the second side of the lower electrode plate. In this way, magnetic field coverage can be achieved on both sides corresponding to the electromagnetic material. For example, when the two short sides of a quadrilateral are far apart, resulting in a large plasma edge peak, magnetic materials can be placed on these two far apart sides to suppress the large plasma edge peak.

[0069] Furthermore, based on the above embodiments, the magnetic material may further include: a first magnetic material disposed above the third and fourth edge regions of the upper electrode plate along the third and fourth side directions of the upper electrode plate, respectively, and disposed below the third and fourth edge regions of the lower electrode plate along the third and fourth side directions of the lower electrode plate, respectively. The third and fourth edge regions of the upper electrode plate are regions of the upper electrode plate closest to the third and fourth side edges, respectively, and the third and fourth edge regions of the lower electrode plate are regions of the lower electrode plate closest to the third and fourth side edges, respectively. This achieves full magnetic field coverage of all four sides of the electrode plate, thereby suppressing plasma peaks at all sides of the quadrilateral electrode plate when the distance between the four sides of the quadrilateral is relatively large.

[0070] It should be noted that, in this application, the "first side," "second side," "third side," and "fourth side" of the upper electrode plate are all sides whose positions correspond to the "first side," "second side," "third side," and "fourth side" of the lower electrode plate. For example, if the first side of the upper electrode plate is the shorter left side, then the first side of the lower electrode plate is also the shorter left side in the same orientation. Furthermore, in this application, the upper electrode plate and the lower electrode plate can have approximately the same shape and size.

[0071] Figure 6 shows a front sectional view of another plasma device according to the first embodiment of this application, and Figure 7 shows a top view and a bottom view of the plasma device shown in Figure 6. As shown in Figures 6 and 7, the plasma device includes a plasma reaction chamber and a magnetic material. The plasma reaction chamber includes an upper electrode plate 1 and a lower electrode plate 2. In the plasma device shown in Figures 6 and 7, both the upper electrode plate 1 and the lower electrode plate 2 are rectangles, each including two long sides and two short sides. Specifically, the first side and the second side of the upper electrode plate 1 are the first short side 11 and the second short side 12, respectively, and the first side and the second side of the lower electrode plate 2 are the first short side 21 and the second short side 22, respectively. The magnetic material 3 includes a first magnetic material disposed above the first edge region and the second edge region of the upper electrode plate 1 along the first short side 11 and the second short side 12, respectively, and disposed below the first edge region and the second edge region of the lower electrode plate 2 along the first short side 21 and the second short side 22, respectively. In this design, the first and second edge regions of the upper electrode plate are respectively the regions of the upper electrode plate 1 closest to the first short side 11 and the second short side 12, and the first and second edge regions of the lower electrode plate 2 are respectively the regions of the lower electrode plate 2 closest to the first short side 21 and the second short side 22. Those skilled in the art will understand that the electromagnetic material 3 can also be disposed on one of the longer sides, but since the two shorter sides are farther apart, the resulting plasma peak is higher. Therefore, disposing of it on one of the shorter sides can suppress the side with the larger plasma peak. Alternatively, the magnetic material 3 can be disposed on all four sides.

[0072] In one embodiment, the side of the first magnetic material located above the upper electrode plate facing the upper electrode plate is the first pole, and the side facing away from the upper electrode plate is the second pole; similarly, the side of the first magnetic material located below the lower electrode plate facing away from the lower electrode plate is the first pole, and the side facing the lower electrode plate is the second pole. The first pole is the N pole, and the second pole is the S pole, or vice versa. This arrangement of opposite polarities at the upper and lower electrode plates generates vertical magnetic field lines between them. Electrons passing perpendicularly through these lines are affected by the Lorentz force and undergo helical motion. When the magnetic field is strong enough, it reduces the electron's cyclotron radius and mean free path, decreasing the electron collision frequency and thus weakening the plasma edge peak.

[0073] In one embodiment, the distance between the first magnetic material located above the upper electrode plate and the upper electrode plate is 1-30 mm, and the distance between the first magnetic material located below the lower electrode plate and the lower electrode plate is 1-30 mm; the distance between the first magnetic material and its adjacent side is 2-40 mm. Thus, by placing the magnetic material around the edge region of the electrode plates, while maintaining a certain distance between the opposing magnetic materials on the upper and lower electrode plates, and controlling the central vertical magnetic field lines generated by the magnetic material to a certain distance from the side of the plasma reaction cavity, the strength and position of the formed magnetic field can be better controlled, thereby better suppressing plasma edge peaks in the plasma reaction cavity.

[0074] In one embodiment, the distances between the four sides of the upper or lower electrode plate and the center of the upper or lower electrode plate may be the same or different, wherein the magnetic flux of the first magnetic material corresponding to the side farther from the center of the upper or lower electrode plate is greater. Since the plasma density at the edge of the reaction chamber is higher than the plasma density in the central region during large-area CCP discharge, in this embodiment, the magnetic flux of the first magnetic material corresponding to the side farther from the center of the electrode plate is set to be greater.

[0075] In one embodiment, at the upper or lower electrode plate, the length of a first magnetic material disposed along a certain side direction is equal to or slightly less than the length of that side.

[0076] In one embodiment, the first magnetic material 3 can be an electromagnet. When the first magnetic material 3 is an electromagnet, as shown in FIG8, the first magnet 3, which is energized by direct current or alternating current, can be regarded as a rectangular coil arranged at the edge of the chamber, which generates vertical magnetic field lines and can suppress discharge on the sidewalls and edges of the reaction chamber. Those skilled in the art will understand that, depending on the plasma density, the magnetic field strength can be adjusted as needed by changing the current and voltage of the electromagnet.

[0077] In one embodiment, the first magnetic material 3 can be a permanent magnet. The static magnetic field generated by the permanent magnet can be easily controlled and does not affect the overall plasma characteristics to optimize the overall uniformity of the plasma within the cavity. Specifically, by using permanent magnets arranged above and below the edge region of the electrode plate in the reaction cavity, a non-uniform magnetic field is constructed within the reaction cavity to regulate the plasma density, ultimately achieving optimization of the overall plasma uniformity during large-area CCP discharge.

[0078] Furthermore, depending on the specific circumstances, such as different discharge parameters and plasma cavity parameters, and considering the varying effects of different plasma densities on magnetic field attenuation, in addition to the aforementioned first magnetic material 3, the strength, direction, and distribution of the magnetic field can be controlled by arranging magnetic materials of different sizes at different locations. This allows for better optimization of the magnetic field for different plasma densities. Specifically, depending on actual needs, magnetic materials of different sizes and magnetic fluxes can be combined, or a variable magnetic field can be generated using an energized coil. Preferably, the magnetic flux of the magnetic materials can be in the range of 0.1 Gs to 10 Gs.

[0079] Considering the characteristic that the plasma density at the edge of the reaction chamber is higher than that in the central region during large-area CCP discharge, the magnetic flux of multiple magnetic materials arranged in the same edge region of the upper and lower electrode plates generally decreases in a gradient order from the outside to the middle of the reaction chamber. That is, the magnetic material closer to the outside of the reaction chamber has a higher magnetic flux, and the magnetic material closer to the middle of the reaction chamber has a lower magnetic flux. This can better suppress the edge discharge effect. Based on this, according to the second embodiment of this application, in addition to the first magnetic material 3, the magnetic material also includes a second magnetic material disposed above the first edge region of the upper electrode plate along the first side direction of the upper electrode plate and below the first edge region of the lower electrode plate along the first side direction of the lower electrode plate. The second magnetic material is closer to the center of the upper or lower electrode plate than the first magnetic material, and the magnetic flux of the second magnetic material is lower than or equal to the magnetic flux of the first magnetic material. That is, the edge discharge effect can be better suppressed by the magnetic materials arranged in a gradient of magnetic flux. In one embodiment, the first magnetic material and the second magnetic material can be permanent magnets, or they can be electromagnets, and are energized in such a way that the magnetic flux of the second magnetic material is lower than or equal to the magnetic flux of the first magnetic material.

[0080] Figure 9 shows a front sectional view of a plasma device according to a second embodiment of this application, and Figure 10 shows a top view and a bottom view of the plasma device shown in Figure 9. As shown in Figures 9 and 10, both the first electrode plate and the second electrode plate are rectangular electrode plates, and the first side and the second side are two non-adjacent opposite sides of the rectangular electrode plate, which are two short side edges in Figures 9 and 10. In addition to the first magnetic material 3, the magnetic material also includes a second magnetic material 4, which is disposed above the first edge region and the second edge region of the upper electrode plate respectively along the first side and the second side of the upper electrode plate, and disposed below the first edge region and the second edge region of the lower electrode plate respectively along the first side and the second side of the lower electrode plate; and a third magnetic material 5, which is disposed above the first edge region and the second edge region of the upper electrode plate respectively along the first side and the second side of the upper electrode plate, and disposed below the first edge region and the second edge region of the lower electrode plate respectively along the first side and the second side of the lower electrode plate. Within each edge region, the second magnetic material is closer to the center of the upper or lower electrode plate than the first magnetic material, and the third magnetic material is closer to the center of the upper or lower electrode plate than the second magnetic material; the magnetic flux of the second magnetic material is less than or equal to the magnetic flux of the first magnetic material, and the magnetic flux of the third magnetic material is less than the magnetic flux of the second magnetic material. All three magnetic materials are permanent magnets.

[0081] In one embodiment, within each edge region, the side of the first magnetic material located above the upper electrode plate facing the upper electrode plate is the first pole, and the side facing away from the upper electrode plate is the second pole; the side of the first magnetic material located below the lower electrode plate is the first pole facing away from the lower electrode plate, and the side facing the lower electrode plate is the second pole; the side of the second magnetic material located above the upper electrode plate is the first pole facing away from the upper electrode plate, and the side facing the upper electrode plate is the second pole; the side of the second magnetic material located below the lower electrode plate is the first pole facing the lower electrode plate, and the side facing away from the lower electrode plate is the second pole; the side of the third magnetic material facing the second magnetic material is the first pole, and the side facing away from the second magnetic material is the second pole. The first pole of the magnetic material is the N pole, and the second pole is the S pole, or the first pole of the magnetic material is the S pole, and the second pole is the N pole.

[0082] The first magnetic material 3, the second magnetic material 4, and the third magnetic material 5 of this application can be a monolithic strip magnetic material having N poles and S poles in the thickness direction. Specifically, the first magnetic material 3 and the second magnetic material 4 have N poles or S poles on the surfaces facing or away from the electrode plate, and the third magnetic material 5 has N poles or S poles on the surfaces facing or away from the second magnetic material. Alternatively, as shown in Figure 11, the first magnetic material 3, the second magnetic material 4, or the third magnetic material 5 can also be composed of multiple small magnets arranged along the first or second side of the electrode plate. The small magnets constituting the first magnetic material 3 and the second magnetic material 4 each have a first pole or a second pole on the surface facing or away from the electrode plate, and the small magnets constituting the third magnetic material 5 each have a first pole or a second pole on the surface facing or away from the second magnetic material.

[0083] In one embodiment, the distance between the first magnetic material 3, the second magnetic material 4, and the third magnetic material 5 and their adjacent upper electrode plate 1 or lower electrode plate 2 is 1-30 mm. The distance between the first magnetic material 3 and its adjacent first or second side is 2-40 mm, the distance between the first magnetic material 3 and its adjacent second magnetic material 4 is 5-50 mm, and the distance between the second magnetic material 4 and its adjacent third magnetic material 5 is 10-80 mm.

[0084] Magnetic material fixing devices can be set at corresponding positions on the upper electrode plate 1 and the lower electrode plate 2 to install the magnetic material.

[0085] In one embodiment, the cross-sectional area of ​​the second magnetic material 4 along its long side is the same as that of the first magnetic material 3 along its long side, and the cross-sectional area of ​​the third magnetic material 5 along its long side is greater than that of the first magnetic material 3 along its long side.

[0086] In one embodiment, at the upper electrode plate 1 or the lower electrode plate 2, the length of the first magnetic material 3 is equal to or slightly less than the length of the first side or the second side, the length of the second magnetic material 4 is equal to or slightly less than the length of the first magnetic material 3, and the length of the third magnetic material 5 is equal to or slightly less than the length of the second magnetic material 4. Specifically, when the magnetic materials are only disposed on the opposite first and second sides, the lengths of the first, second, and third magnetic materials can be equal; when the magnetic materials are disposed on all four sides of the electrode plate, the length of the first magnetic material is greater than the length of the second magnetic material, and the length of the second magnetic material is greater than the length of the third magnetic material, so that a ring of magnetic material formed by the first magnetic material along the four sides surrounds a ring of magnetic material formed by the second magnetic material along the four sides, and a ring of magnetic material formed by the second magnetic material along the four sides surrounds a ring of magnetic material formed by the third magnetic material along the four sides. Furthermore, the ring of magnetic material formed by the first, second, or third magnetic materials along the four sides can be integrally formed or formed by splicing four strip magnetic materials respectively.

[0087] In one embodiment, the upper electrode plate 1 and the lower electrode plate 2 are quadrilaterals with a length of 50-500 mm and a width of 10-500 mm, and the distance between the upper electrode plate and the lower electrode plate is 10-100 mm. Preferably, they are rectangles with a length of 100-300 mm and a width of 50-200 mm, and the distance between the upper electrode plate and the lower electrode plate is 20-80 mm. The upper and lower electrode plates can be rectangular or square, but are not necessarily rectangular. When the distance between the edge and the center of the rectangular or square electrode plate is large, a plasma peak will appear. This solution provides a controllable magnetic material at the edge position, which can be used to control the plasma peak at the edge. The distance between the upper and lower electrode plates defines the discharge region of the plasma, and the discharge region has a direct impact on the formation and size of the edge peak.

[0088] In one embodiment, the cross-sectional area of ​​the second magnetic material 4 along its long side direction and the cross-sectional area of ​​the first magnetic material 3 along its long side direction are in the range of 5mm*5mm-30mm*30mm, and the cross-sectional area of ​​the third magnetic material 5 along its long side direction is in the range of 10mm*60mm-5mm*200mm.

[0089] In one embodiment, the magnetic flux of the first, second, and third magnetic materials is in the range of 0.1-20 Gs, preferably in the range of 0.3-10 Gs.

[0090] Based on the plasma device shown in Figure 9 above, this application provides a specific application example. In this specific application example, both the upper and lower electrode plates are rectangles of 1800mm*900mm, and the distance between the upper and lower electrode plates is 70mm; the size of the first and second magnetic materials, with a cross-sectional dimension of 10mm*10mm along the long side of the rectangle; the size of the third magnetic material, with a cross-sectional dimension of 10mm*60mm along the long side of the rectangle; the distance between the magnetic material and its adjacent electrode plate is 5mm; the distance between the first magnetic material and the short side of its adjacent electrode plate is 10mm; the distance between the first and second magnetic materials is 15mm; and the distance between the third and second magnetic materials is 30mm; the magnetic flux of both the first and second magnetic materials is 1Gs, and the magnetic flux of the third magnetic material is 0.4Gs; the first pole of the magnetic material is set as the N pole, and the second pole is set as the S pole, and the resulting magnetic field distribution is shown in Figure 12 (Figure 12 only schematically shows the magnetic field distribution on one side of the reaction chamber; the magnetic field distribution on the other side is the same as the one shown). Thus, the first and second magnetic materials at the edges of the electrode plate exert a stronger magnetic field to restrict electron migration and diffusion, while the third magnetic material with a smaller magnetic flux allows electrons to diffuse to some extent along the magnetic field lines. As shown in Figure 12, the magnetic field converges in a gradient towards the corners of the chamber, with the influence of the magnetic field becoming stronger closer to the edge of the plasma reaction chamber. This gradient magnetic field distribution effectively suppresses edge discharge effects, thereby controlling the plasma density throughout the chamber and ultimately optimizing the uniformity of the plasma throughout the chamber during large-area CCP discharge.

[0091] In the second embodiment described above, by setting multiple magnetic materials with magnetic flux arranged in a gradient from large to small in the same edge region of the electrode plate, the edge discharge effect can be better suppressed, thereby optimizing the uniformity of the plasma cavity during large-area CCP discharge.

[0092] Furthermore, considering the characteristic that the plasma density at the edge of the reaction chamber is higher than that in the central region during large-area CCP discharge, a side magnetic material can be arranged on the side of the plasma reaction chamber. The magnetic field generated by the side magnetic material can further influence the plasma density at the edge of the plasma reaction chamber. Therefore, based on the first embodiment, according to the third embodiment of this application, the magnetic material further includes: a side magnetic material disposed along the length direction of the first side in the side region of the plasma reaction chamber, wherein the side region of the plasma reaction chamber is the region outside the first side of the plasma reaction chamber, and the first side is the side of the plasma reaction chamber located between the upper electrode plate and the lower electrode plate and corresponding to the first side. That is, the edge discharge effect is better suppressed by arranging magnetic material on the side of the plasma reaction chamber. In one embodiment, the magnetic flux of the side magnetic material is higher than or equal to the magnetic flux of the first magnetic material. The first magnetic material and the side magnetic material can be permanent magnets, or they can be electromagnets, and are energized in such a way that the magnetic flux of the side magnetic material is higher than or equal to the magnetic flux of the first magnetic material.

[0093] In the third embodiment described above, the magnetic field generated by the side magnetic material and the first magnetic material can hinder the migration and diffusion of high-energy electrons generated by the discharge at the edge of the electrode plate and between the electrode plates, and can also reduce the collision generation rate of the plasma, ultimately achieving the effect of weakening the plasma edge peak.

[0094] Figure 13 shows a front sectional view of a plasma device according to a third embodiment of this application, and Figure 14 shows a top view and a bottom view of the plasma device shown in Figure 13. As shown in Figures 13 and 14, both the first electrode plate and the second electrode plate are rectangular electrode plates, and the first side and the second side are two non-adjacent opposite sides of the rectangular electrode plate, which are two short side sides in Figures 13 and 14. In addition to the first magnetic material 3, the magnetic materials also include a first side magnetic material 6 disposed in the first side region and the second side region of the plasma reaction cavity with the length direction along the first side direction and the second side direction of the upper electrode plate, respectively, and a second side magnetic material 7 disposed in the third side region and the fourth side region of the plasma reaction cavity with the length direction along the first side direction and the second side direction of the lower electrode plate, respectively. The first side region is the region located outside the first side of the plasma reaction cavity and between the lateral extension regions of the upper electrode plate and the lower electrode plate, and close to the upper electrode plate. The second side region is the region located outside the second side of the plasma reaction cavity and between the lateral extension regions of the upper electrode plate and the lower electrode plate, and close to the upper electrode plate. The third side region is located outside the first side of the plasma reaction chamber, between the lateral extension regions of the upper and lower electrode plates, and close to the lower electrode plate. The fourth side region is located outside the second side of the plasma reaction chamber, between the lateral extension regions of the upper and lower electrode plates, and close to the lower electrode plate. The first side is the side of the plasma reaction chamber located between the upper and lower electrode plates and corresponding to the first side. The second side is the side of the plasma reaction chamber located between the upper and lower electrode plates and corresponding to the second side. The first magnetic material, the first side magnetic material, and the second side magnetic material are all permanent magnets.

[0095] In one embodiment, the magnetic flux of both the first side magnetic material and the second side magnetic material is higher than or equal to the magnetic flux of the first magnetic material.

[0096] In one embodiment, the side of the first magnetic material 3 located on the upper electrode plate 1 facing the upper electrode plate 1 is the first pole, and the side facing away from the upper electrode plate 1 is the second pole. Similarly, the side of the first magnetic material 3 located below the lower electrode plate 2 facing away from the lower electrode plate 2 is the first pole, and the side facing the lower electrode plate 2 is the second pole. The side of the first side magnetic material 6 facing away from the plasma reaction chamber is the first pole, and the side facing the plasma reaction chamber is the second pole. The side of the second side magnetic material 6 facing the plasma reaction chamber is the first pole, and the side facing away from the plasma reaction chamber is the second pole. The first pole of the magnetic material is the N pole, and the second pole is the S pole, or vice versa.

[0097] Similar to the first magnetic material 3, the second magnetic material 4, and the third magnetic material 5 described above, the first side magnetic material 6 and the second side magnetic material 7 in this embodiment can be a single piece of strip magnetic material, having an N pole or a S pole on the surface facing and away from the plasma reaction chamber. Alternatively, the first side magnetic material 6 and the second side magnetic material 7 can also be composed of multiple small magnets arranged along the first or second side direction of the electrode plate, each of which has a first pole or a second pole facing or away from the plasma reaction chamber.

[0098] In one embodiment, the distance between the first magnetic material 3 and its adjacent upper or lower electrode plate is 1-30 mm, and the distance between the first and second side magnetic materials and their adjacent sides of the plasma reaction chamber is 1-40 mm. The distance between the first magnetic material and its adjacent first or second side is 2-40 mm, and the distance between the first and second side magnetic materials and their adjacent first or second side is 2-40 mm.

[0099] In one embodiment, the cross-sectional area of ​​the first side magnetic material 6 and the second side magnetic material 7 along the long side direction is the same as the cross-sectional area of ​​the first magnetic material 3 along the long side direction.

[0100] In one embodiment, the lengths of the first side magnetic material 6 and the second side magnetic material 7 are equal to or slightly less than the lengths of the first or second side of the electrode plate.

[0101] In one embodiment, the upper electrode plate 1 and the lower electrode plate 2 are quadrilaterals with a length of 50-500 mm and a width of 10-500 mm, and the distance between the upper electrode plate and the lower electrode plate is 10-100 mm. Preferably, they are rectangles with a length of 100-300 mm and a width of 50-200 mm, and the distance between the upper electrode plate and the lower electrode plate is 20-80 mm. For specific parameter descriptions in the foregoing embodiments, they will not be repeated here.

[0102] In one embodiment, the cross-sectional area of ​​the first magnetic material 3, the first side magnetic material 6, and the second side magnetic material 7 along the long side direction is in the range of 5mm*5mm-30mm*30mm.

[0103] In one embodiment, the magnetic flux of the first, second, and third magnetic materials is in the range of 0.1-20 Gs, preferably in the range of 0.3-10 Gs.

[0104] Based on the plasma device shown in Figure 13 above, this application provides a specific application example. In this specific application example, both the upper and lower electrode plates are rectangles of 1800mm*900mm, and the distance between the upper and lower electrode plates is 70mm; the size of the first magnetic material, the first side magnetic material, and the second side magnetic material, with a cross-sectional dimension of 10mm*10mm along the long side of the rectangle; the distance between the first magnetic material and its adjacent electrode plate is 5mm; the distance between the first magnetic material and its adjacent short side of the electrode plate is 10mm; the distance between the first side magnetic material and the second side magnetic material and the side of the adjacent plasma reaction chamber is 5mm; the distance between the first side magnetic material and the second side magnetic material and the short side of the adjacent electrode plate is 10mm; the magnetic flux of the first magnetic material is 1Gs, and the magnetic flux of the first side magnetic material and the second side magnetic material is 5Gs; the first pole of the magnetic material is set as the N pole, and the second pole is set as the S pole, and the resulting magnetic field distribution is shown in Figure 15 (Figure 15 only schematically shows the magnetic field distribution on one side of the reaction chamber, and the magnetic field distribution on the other side is the same as the one shown). As shown in Figure 15, the first and second side magnetic materials with higher magnetic flux at the sidewall of the reaction chamber are coupled with the magnetic field generated by the first magnetic material, forming a strong local magnetic field at the sidewall and edge corner of the chamber. This local magnetic field can effectively suppress the density of plasma at the edge of the chamber, and ultimately optimize the uniformity of the plasma throughout the chamber during large-area CCP discharge.

[0105] The peak electron density of the plasma during large-area CCP discharge is 1.21E14m. -3 As examples, Figure 16 shows a schematic diagram of the electron density distribution in the plasma reaction chamber without the addition of magnetic materials, and Figure 17 shows a schematic diagram of the electron density distribution in the plasma reaction chamber in a specific application example using the plasma device shown in Figure 13. In the figures, the horizontal and vertical axes represent the dimensions of the plasma reaction chamber, and the color variations represent the electron density values ​​of the plasma at the corresponding locations. As can be seen from Figure 16, without the addition of magnetic materials, the electron density has a peak at the edge of the chamber. However, as shown in Figure 17, after using the first magnetic material and the side magnetic material for magnetic field coupling, the strong magnetic field coupled at the edge of the chamber reduces the peak electron density at the edge to a certain extent, thereby suppressing the edge discharge effect to some extent.

[0106] Figure 18 shows a comparative analysis of the radial electron density distribution curves at the center of the cavity in the case of no magnetic material and in a specific application example using the plasma device shown in Figure 13. As can be seen from Figure 18, for the scheme using the first magnetic material and the side magnetic material, the peak electron density decreases in the edge region near the reaction chamber, and the overall uniformity of the plasma in the cavity is improved.

[0107] In the third embodiment described above, by setting a side magnet outside the side of the plasma reaction chamber, the density of plasma at the edge of the chamber can be better suppressed, ultimately optimizing the uniformity of the plasma throughout the chamber during large-area CCP discharge.

[0108] In the embodiments described above, the diffusion and transport of electrons within the plasma reaction cavity are controlled by applying magnetic materials with different magnetic flux intensities, magnetic field directions, and magnetic field arrangements at the edge of the cavity, thereby improving the plasma uniformity throughout the cavity. By controlling the magnetic field of the magnetic material, the effects of edge effects, standing wave effects, and skin effects on plasma density can be effectively suppressed, thereby improving the overall plasma uniformity and thus the overall coating effect. This is of great significance for improving the quality and yield of semiconductor, photovoltaic, and other products. Furthermore, this method does not significantly affect the overall characteristics of the plasma within the cavity, such as density and temperature, and therefore does not negatively impact the coating quality. Moreover, this application does not require changes to existing equipment and processes; simply adjusting the external magnetic material is sufficient to effectively solve the plasma uniformity problem during large-area CCP discharge, making it simple, easy to implement, and readily applicable.

[0109] It should be noted that in this application, "disposed on..." and "disposed below..." refer to being above or below in the vertical direction, that is, directly above or directly below. For example, "disposed on..." means being directly above the first edge region of the upper electrode plate, excluding being above the oblique side extending vertically beyond the first edge region. Similarly, "disposed outside..." also refers to being outside in the vertical direction, excluding being outside on the oblique side. Furthermore, in this application, the distance between the magnetic material and the side edge of the electrode plate refers to the distance between the magnetic material and the side edge in a direction parallel to or perpendicular to the electrode plate. For example, the distance between the first magnetic material and the first or second side edge refers to the distance between the magnetic material and the first or second side edge in a direction parallel to the electrode plate; the distance between the side magnetic material and the first side edge refers to the distance between the side magnetic material and the first side edge in a direction perpendicular to the electrode plate. Furthermore, in this application, the terms "upper" electrode plate, "lower" electrode plate, "side" and "outside" of the side are all relative concepts. They are descriptions based on the orientation of the upper electrode plate being on top and the lower electrode plate being on the bottom. Those skilled in the art should understand that when the orientation of the plasma reaction chamber changes, for example, when the upper electrode plate is placed on the side, the above orientation description also changes accordingly.

[0110] This application also provides a plasma deposition apparatus. Figure 19 illustrates a plasma deposition apparatus according to a fourth embodiment of this application. As shown in Figure 19, the plasma deposition apparatus includes a plasma device as described above, an outer cavity 8 surrounding the plasma device, and an air inlet 9 disposed on the outer cavity 8 for introducing reactive gas. Optionally, the plasma deposition apparatus may further include a power-feeding copper ring 10, a Teflon insulating material 11, and a heating plate 12. In this plasma deposition apparatus, the upper electrode plate 1 may be a metal electrode, which can serve as a spray plate for the plasma deposition apparatus, and the lower electrode plate 2 may be a graphite plate, which can serve as a grounding electrode. The plasma device in the plasma deposition apparatus shown in Figure 19 is the plasma device in the first embodiment of this application; those skilled in the art will understand that it may also be a plasma device in other embodiments.

[0111] In the above embodiments or implementations of this application, the various embodiments or implementations are related and can be referred to and cited in each other without departing from the general principles.

[0112] The above description is merely an illustrative embodiment of this application. Any equivalent changes and modifications made by those skilled in the art without departing from the concept and principles of this application shall fall within the scope of protection of this application.

Claims

1. A plasma device, characterized in that, include: A plasma reaction chamber, comprising an upper electrode plate and a lower electrode plate, wherein the upper electrode plate and the lower electrode plate have a voltage difference to generate plasma, and both the upper electrode plate and the lower electrode plate have at least one side. as well as A magnetic material includes: a first magnetic material disposed above a first edge region of the upper electrode plate along a first side direction of the upper electrode plate and disposed below a first edge region of the lower electrode plate along a first side direction of the lower electrode plate, wherein the first magnetic material has a larger dimension in the length direction than in the width direction, the first edge region of the upper electrode plate is the region of the upper electrode plate close to the first side of the upper electrode plate, and the first edge region of the lower electrode plate is the region of the lower electrode plate close to the first side of the lower electrode plate.

2. The apparatus according to claim 1, characterized in that, Both the upper electrode plate and the lower electrode plate are quadrilateral electrode plates. The magnetic material further includes: a first magnetic material disposed above the second edge region of the upper electrode plate along the second side direction of the upper electrode plate and disposed below the second edge region of the lower electrode plate along the second side direction of the lower electrode plate, wherein the first magnetic material is a bar magnetic material, the second edge region of the upper electrode plate is the region of the upper electrode plate close to the second side of the upper electrode plate, and the second edge region of the lower electrode plate is the region of the lower electrode plate close to the second side of the lower electrode plate.

3. The apparatus according to claim 2, characterized in that, The magnetic material further includes: a first magnetic material disposed above the third and fourth edge regions of the upper electrode plate along the third and fourth side directions of the upper electrode plate, respectively, and disposed below the third and fourth edge regions of the lower electrode plate along the third and fourth side directions of the lower electrode plate, respectively, wherein the third and fourth edge regions of the upper electrode plate are regions of the upper electrode plate close to the third and fourth side directions of the upper electrode plate, respectively, and the third and fourth edge regions of the lower electrode plate are regions of the lower electrode plate close to the third and fourth side directions of the lower electrode plate, respectively.

4. The apparatus according to any one of claims 1-3, characterized in that, The side of the first magnetic material located above the upper electrode plate facing the upper electrode plate is the first pole, and the side facing away from the upper electrode plate is the second pole; the side of the first magnetic material located below the lower electrode plate facing away from the lower electrode plate is the first pole, and the side facing the lower electrode plate is the second pole.

5. The apparatus according to claims 1-3, characterized in that, The distance between the first magnetic material located above the upper electrode plate and the upper electrode plate is 1-30mm, and the distance between the first magnetic material located below the lower electrode plate and the lower electrode plate is 1-30mm. The distance between the first magnetic material and its adjacent first, second, third, or fourth side is 2-40 mm.

6. The apparatus according to claim 2 or 3, characterized in that, The distances between the four sides of the upper or lower electrode plate and the center position of the upper or lower electrode plate may be the same or different, wherein the magnetic flux of the first magnetic material corresponding to the side farther away from the center position of the upper or lower electrode plate is greater.

7. The apparatus according to claim 1, characterized in that, The magnetic material further includes a second magnetic material disposed above the first edge region of the upper electrode plate along the first side direction of the upper electrode plate and disposed below the first edge region of the lower electrode plate along the first side direction of the lower electrode plate. The second magnetic material is closer to the center of the upper or lower electrode plate than the first magnetic material, and the magnetic flux of the second magnetic material is lower than or equal to the magnetic flux of the first magnetic material.

8. The apparatus according to claim 2, characterized in that, Both the first electrode plate and the second electrode plate are rectangular electrode plates. The first side and the second side are two non-adjacent opposite sides of the rectangular electrode plate. The magnetic material further includes a second magnetic material disposed above the first edge region and the second edge region of the upper electrode plate respectively along the first side and the second side of the upper electrode plate, and disposed below the first edge region and the second edge region of the lower electrode plate respectively along the first side and the second side of the lower electrode plate. The third magnetic material is disposed above the first edge region and the second edge region of the upper electrode plate respectively along the first side and the second side of the upper electrode plate, and disposed below the first edge region and the second edge region of the lower electrode plate respectively along the first side and the second side of the lower electrode plate. The first magnetic material, the second magnetic material and the third magnetic material are all permanent magnets. In each of the first edge regions and the second edge regions, the second magnetic material is closer to the center of the upper or lower electrode plate than the first magnetic material, and the third magnetic material is closer to the center of the upper or lower electrode plate than the second magnetic material; the magnetic flux of the second magnetic material is less than or equal to the magnetic flux of the first magnetic material, and the magnetic flux of the third magnetic material is less than the magnetic flux of the second magnetic material.

9. The apparatus according to claim 8, characterized in that, In each of the first edge regions and the second edge regions, the side of the first magnetic material located above the upper electrode plate facing the upper electrode plate is the first pole, and the side facing away from the upper electrode plate is the second pole; the side of the first magnetic material located below the lower electrode plate facing away from the lower electrode plate is the first pole, and the side facing the lower electrode plate is the second pole. The side of the second magnetic material located above the upper electrode plate that faces away from the upper electrode plate is the first pole, and the side that faces the upper electrode plate is the second pole. The side of the second magnetic material located below the lower electrode plate that faces the lower electrode plate is the first pole, and the side that faces away from the lower electrode plate is the second pole. The side of the third magnetic material facing the second magnetic material is the first pole, and the side facing away from the second magnetic material is the second pole.

10. The apparatus according to claim 8 or 9, characterized in that, The distance between the first magnetic material, the second magnetic material, and the third magnetic material and their adjacent upper or lower electrode plate is 1-30 mm; The distance between the first magnetic material and its adjacent first or second side is 2-40 mm, the distance between the first magnetic material and its adjacent second magnetic material is 5-50 mm, and the distance between the second magnetic material and its adjacent third magnetic material is 10-80 mm.

11. The apparatus according to claim 8 or 9, characterized in that, Along the direction of the third side of the rectangular electrode plate, which is perpendicular to the first side, the cross-sectional area of ​​the second magnetic material is the same as that of the first magnetic material, and the cross-sectional area of ​​the third magnetic material is greater than that of the first magnetic material.

12. The apparatus according to claim 8 or 9, characterized in that, Each of the first, second, and third magnetic materials consists of a plurality of small magnets arranged along the first or second side.

13. The apparatus according to claim 1, characterized in that, The magnetic material further includes: a side magnetic material disposed in the side region of the plasma reaction cavity along the first side direction in the length direction, wherein the side region of the plasma reaction cavity is the region located outside the first side surface of the plasma reaction cavity, and the first side surface is the side surface of the plasma reaction cavity located between the upper electrode plate and the lower electrode plate and corresponding to the first side surface.

14. The apparatus according to claim 13, characterized in that, The magnetic flux of the side magnetic material is higher than or equal to the magnetic flux of the first magnetic material.

15. The apparatus according to claim 2, characterized in that, Both the first and second electrode plates are rectangular electrode plates, with the first and second sides being two non-adjacent opposite sides of the rectangular electrode plates. The magnetic material further includes: first-side magnetic material disposed in the first and second side regions of the plasma reaction cavity along the first and second side directions of the upper electrode plate, respectively; and second-side magnetic material disposed in the third and fourth side regions of the plasma reaction cavity along the first and second side directions of the lower electrode plate, respectively. The first side region is located outside the first side of the plasma reaction cavity and between the lateral extension regions of the upper and lower electrode plates, close to the upper electrode plate. The second side region is located outside the second side of the plasma reaction cavity and between the first and second side directions of the lower electrode plate, close to the upper electrode plate. The third side region is located outside the first side of the plasma reaction chamber and between the lateral extension regions of the upper and lower electrode plates, and close to the lower electrode plate. The fourth side region is located outside the second side of the plasma reaction chamber and between the lateral extension regions of the upper and lower electrode plates, and close to the lower electrode plate. The first side is the side of the plasma reaction chamber located between the upper and lower electrode plates and corresponding to the first side. The second side is the side of the plasma reaction chamber located between the upper and lower electrode plates and corresponding to the second side. The first magnetic material, the first side magnetic material, and the second side magnetic material are all permanent magnets.

16. The apparatus according to claim 15, characterized in that, The magnetic flux of both the first and second side magnetic materials is higher than or equal to the magnetic flux of the first magnetic material.

17. The apparatus according to claim 15 or 16, characterized in that, The side of the first magnetic material located on the upper electrode plate facing the upper electrode plate is the first pole, and the side facing away from the upper electrode plate is the second pole. The side of the first magnetic material located below the lower electrode plate facing away from the lower electrode plate is the first pole, and the side facing the lower electrode plate is the second pole. The side of the first side magnetic material facing away from the plasma reaction cavity is the first pole, and the side facing the plasma reaction cavity is the second pole; the side of the second side magnetic material facing the plasma reaction cavity is the first pole, and the side facing away from the plasma reaction cavity is the second pole.

18. The apparatus according to claim 15 or 16, characterized in that, The distance between the first magnetic material and its adjacent upper or lower electrode plate is 1-30 mm, and the distance between the first and second side magnetic materials and their adjacent sides of the plasma reaction chamber is 1-40 mm. The distance between the first magnetic material and its adjacent first or second side is 2-40 mm, and the distance between the first side magnetic material and the second side magnetic material and their adjacent first or second side is 2-40 mm.

19. The apparatus according to claim 15 or 16, characterized in that, Along the direction of the third side perpendicular to the first side of the rectangular electrode plate, the cross-sectional area of ​​the first side magnetic material and the second side magnetic material is the same as the cross-sectional area of ​​the first magnetic material.

20. The apparatus according to claim 2, 3, 7, or 13, characterized in that, The magnetic material is an electromagnet, used to pass direct current or alternating current during the plasma generation process.

21. The apparatus according to claim 1, characterized in that, The upper and lower electrode plates are quadrilaterals with a length of 50-500mm and a width of 10-500mm, and the distance between the upper and lower electrode plates is 10-100mm.

22. A plasma deposition apparatus, comprising: The plasma device as described in any one of claims 1-21; The outer cavity surrounds the plasma device; as well as An air inlet is located on the outer cavity and is used to introduce reactive gases.

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