Photovoltaic module and photovoltaic system

Abstract

The present application provides a photovoltaic module and a photovoltaic system, and relates to the technical field of photovoltaics. The photovoltaic module comprises a conductive back sheet and back contact cells provided on the conductive back sheet; each back contact cell comprises: a plurality of collector grid lines; the conductive back sheet comprises a conductive layer and an insulating layer located between the conductive layer and the back contact cells; the conductive layer comprises a plurality of finger-shaped conductive structures extending in a second direction and an insulating gap located between adjacent finger-shaped conductive structures; through holes are provided in the insulating layer; some regions of the finger-shaped conductive structures at the through holes are electrically connected to the collector grid lines at corresponding positions; in a region of the conductive layer corresponding to one back contact cell, the number of the finger-shaped conductive structures is a first number, the ratio of the width of the insulating gap to the first number being 18 to 125.

Description

Photovoltaic modules and photovoltaic systems

[0001] This application claims priority to Chinese Patent Application No. 202510120934.7, filed on January 24, 2025, entitled "Photovoltaic Module and Photovoltaic System", the entire contents of which are incorporated herein by reference. Technical Field

[0002] This application relates to the field of photovoltaic technology, and in particular to a photovoltaic module and a photovoltaic system. Background Technology

[0003] Back-contact solar cells, due to their grid-free structure on the light-facing side, can fully utilize sunlight, resulting in higher efficiency. Furthermore, the grid-free structure on the light-facing side makes the module appearance more aesthetically pleasing, thus offering broad application prospects. However, individual back-contact solar cells have poor mechanical strength, are easily affected by the environment, and have low output voltage, current, and power. Therefore, multiple back-contact solar cells are usually encapsulated into photovoltaic modules for use.

[0004] In existing photovoltaic modules, to avoid the risk of microcracks introduced by heat during the welding process, conductive backsheets can be used for conductive connections. The conductive layer in the conductive backsheet needs to have finger-shaped conductive structures and insulating gaps between adjacent finger-shaped conductive structures.

[0005] However, in existing photovoltaic modules with conductive backsheets, the size design of the insulation gaps in the conductive layer is suboptimal, resulting in poor performance of photovoltaic modules with conductive backsheets.

[0006] Application content

[0007] This application provides a photovoltaic module and a photovoltaic system, which aims to solve the problem of poor performance of existing photovoltaic modules containing conductive backsheets.

[0008] A first aspect of this application provides a photovoltaic module, comprising: a conductive backsheet, and back contact cells disposed on the conductive backsheet;

[0009] The back contact cell includes: a plurality of current collector grid lines extending along a first direction;

[0010] The conductive backsheet includes: a conductive layer, and an insulating layer located between the conductive layer and the back contact cell; the conductive layer includes: a plurality of finger-shaped conductive structures extending along a second direction, and an insulating gap located between adjacent finger-shaped conductive structures; the first direction is different from the second direction; a through hole is provided in the insulating layer, and a portion of the finger-shaped conductive structure at the through hole is electrically connected to the current collector grid line at the corresponding position;

[0011] In the conductive layer, within the region corresponding to one of the back contact cells, the number of the finger-shaped conductive structures is a first number;

[0012] The ratio of the width of the insulation gap to the first quantity is 18 to 125; the width is measured in micrometers.

[0013] In this application, a portion of the finger-shaped conductive structure at the through-hole is electrically connected to the corresponding current collector grid line to achieve current collection and conduction. The width of the insulating gap in the conductive layer affects the size of the finger-shaped conductive structure, which in turn affects the resistance and the current collection and conduction effect. Therefore, in the region of the conductive layer corresponding to a back contact cell, the first number of finger-shaped conductive structures and the width of the insulating gap are closely related to the current conduction quality. Specifically, as the number of finger-shaped conductive structures in the conductive layer corresponding to a back contact cell increases, it helps to increase the current collection capacity of the back contact cell and reduce resistance loss, thereby increasing the power of the photovoltaic module. However, when the number of finger-shaped conductive structures increases to a certain extent, the boundary effect of improving the current collection capacity and reducing resistance loss decreases. Secondly, too many finger-shaped conductive structures will also increase the difficulty of aligning the current collector grid and the conductive backsheet, and increase the manufacturing precision requirements of the current collector grid and the conductive layer, thus increasing the manufacturing difficulty. In addition, too many finger-shaped conductive structures will reduce the effective area of ​​the back contact cell surface for absorbing light, thereby reducing the photoelectric conversion efficiency. Furthermore, too many finger-shaped conductive structures will increase the length of the insulation gap, and the probability of the waste wire breaking during the waste removal process of forming the insulation gap will increase. On the one hand, this will lead to a decrease in waste removal efficiency, and on the other hand, some residual waste wires are prone to causing short circuits between adjacent finger-shaped conductive structures 121 due to overlap.To reduce the probability of wire breakage, increasing the width of the insulation gap could lead to excessive wire removal. Excessive removal reduces the effective area of ​​the conductive layer, increasing overall resistivity and thus lowering current collection efficiency. Therefore, selecting the appropriate initial spacing requires finding a balance between the current collection capacity of the back-contact solar cell, resistance loss, light area utilization, wire removal efficiency, and cost to achieve optimal performance and cost-effectiveness. Furthermore, the insulation gap between adjacent finger-like conductive structures in the conductive layer primarily prevents short circuits. Increasing the gap width reduces the risk of short circuits and the probability of wire breakage. However, excessively wide gaps result in more wire removal, leading to greater material waste, higher costs, and a smaller effective area with higher resistance. Conversely, insufficient gap width increases the likelihood of wire breakage during removal, resulting in lower efficiency and compromised insulation reliability. Therefore, selecting the appropriate insulation gap width requires balancing cost, resistance loss, short-circuit risk, and wire removal efficiency. Finding a balance point to achieve the best performance and cost-effectiveness; it should be noted that, considering multiple factors such as the current collection capacity of the back contact cell 2, resistance loss, alignment difficulty of the current collector grid and conductive backplate 1, light area utilization, waste removal efficiency, short circuit risk, and cost, the first quantity here can be selected from 12 to 28, and the width d1 of the insulation gap 122 here can be selected from 500μm to 1500μm, 500 / 28=17.8, 1500 / 12=125, therefore, in this application, the insulation gap The ratio of the width to the first quantity is between 18 and 125. This ratio range is a suitable range selected when the current transmission efficiency, resistance loss, light area utilization, short circuit risk, waste removal efficiency, cost, and process of the back contact cell are relatively balanced. Therefore, in this photovoltaic module, the back contact cell has strong current collection capability and low resistance loss, high light area utilization, high power generation efficiency, low manufacturing cost, relatively simple preparation process, high yield, low short circuit risk, low probability of waste wire breakage, and high waste removal efficiency.

[0014] In some embodiments, the length of the insulating gap in the region corresponding to one of the back contact cells in the conductive layer is a first length;

[0015] The ratio of the first length to the width of the insulation gap is between 1200 and 9000.

[0016] In some embodiments, the ratio of the length of the finger-shaped conductive structure to the width of the insulating gap is 60 to 450; the direction in which the length of the finger-shaped conductive structure lies is parallel to the second direction.

[0017] In some embodiments, in the second direction, the finger-like conductive structure includes opposing head and tail regions, and an intermediate region connecting the head and tail regions; the intermediate region contains the center of the finger-like conductive structure; the width of the head region is less than or equal to the width of the tail region.

[0018] In some embodiments, for a finger-shaped conductive structure: the width of the insulating gap at the head region and the width of the insulating gap at the tail region are both greater than or equal to the width of the insulating gap at the middle region.

[0019] In some embodiments, the width of the finger-shaped conductive structure at the center of the head region is a first width; the width of the finger-shaped conductive structure at its center is a second width.

[0020] For a given finger-shaped conductive structure: the width of the insulating gap at the center of the head region is in a first ratio to the first width, and the width of the insulating gap at the center of the finger-shaped conductive structure is in a second ratio to the second width;

[0021] The first ratio is greater than or equal to the second ratio.

[0022] In some embodiments, the first ratio is 6 to 44;

[0023] The second ratio is 8 to 55.

[0024] In some embodiments, for one of the finger-shaped conductive structures: the ratio of the width of the insulating gap at the center of the head region to the width of the insulating gap at the center of the finger-shaped conductive structure is 1 to 3.

[0025] In some embodiments, within the same finger-shaped conductive structure: the width at the center of the tail region is the third width, and the width at the center of the head region is the first width; the ratio of the third width to the first width is 2.5 to 53.

[0026] In some embodiments, the head region includes an endpoint remote from the tail region;

[0027] The endpoint of the finger-shaped conductive structure and its projection on the conductive layer are located within the finger-shaped conductive structure, and the distance between the via adjacent to the endpoint and the via is 0.3 mm to 1 mm.

[0028] In some embodiments, the width of the insulation gap is from 500 μm to 1500 μm, and the first number ranges from 12 to 28.

[0029] In some embodiments, the width of the insulation gap is 600 μm to 1200 μm, and the first number ranges from 16 to 24.

[0030] In some embodiments, the length of the back contact cell in the first direction is 160 mm to 220 mm;

[0031] The width of the back contact cell is less than or equal to its length.

[0032] In some embodiments, the length of the insulating gap in the region corresponding to one of the back contact cells in the conductive layer is a first length;

[0033] The ratio of the length of the back contact battery cell in the first direction to the first length is 0.09 to 0.12;

[0034] The ratio of the width of the back contact cell to the width of the insulation gap is 65 to 485; the direction in which the width of the back contact cell is located is perpendicular to the first direction.

[0035] In some embodiments, the photovoltaic module further includes an alloy layer located between the finger-shaped conductive structure and the collector grid lines electrically connected to the finger-shaped conductive structure.

[0036] A second aspect of this application provides a photovoltaic module, comprising: a conductive backsheet, and back contact cells disposed on the conductive backsheet;

[0037] The back contact cell includes: a plurality of current collector grid lines extending along a first direction;

[0038] The conductive backsheet includes: a conductive layer, and an insulating layer located between the conductive layer and the back contact cell; the conductive layer includes: a plurality of finger-shaped conductive structures extending along a second direction, and an insulating gap located between adjacent finger-shaped conductive structures; the first direction is different from the second direction; a through hole is formed in the insulating layer, and a portion of the finger-shaped conductive structure at the through hole is electrically connected to the current collector grid line corresponding to the position;

[0039] In the conductive layer, within the region corresponding to one of the back contact cells, the area of ​​all the insulating gaps is the first area;

[0040] The area of ​​the region in the conductive layer corresponding to one of the back contact cells is the second area;

[0041] The first area accounts for 1% to 40% of the second area.

[0042] In some embodiments, the area of ​​one of the finger-shaped conductive structures is a third area;

[0043] The area of ​​the insulating gap on the outside of the finger-shaped conductive structure is the fourth area;

[0044] The ratio of the third area to the fourth area is 3.4 to 4.5.

[0045] In some embodiments, the total area of ​​all the finger-shaped conductive structures in the region corresponding to one of the back contact cells in the conductive layer is the fifth area;

[0046] The ratio of the first area to the fifth area is between 0.02 and 0.24.

[0047] In some embodiments, in the second direction, the finger-shaped conductive structure includes opposing head regions and tail regions, and an intermediate region connecting the head regions and tail regions; the area of ​​the head region is less than or equal to the area of ​​the tail region.

[0048] In some embodiments, the area of ​​the head region is a sixth area; the area of ​​the insulating gap outside the head region is a seventh area;

[0049] The ratio of the seventh area to the sixth area is the third ratio;

[0050] The area of ​​the intermediate region is the eighth area; the area of ​​the insulating gap outside the intermediate region is the ninth area;

[0051] The ratio of the ninth area to the eighth area is the fourth ratio;

[0052] The third ratio is greater than the fourth ratio.

[0053] In some embodiments, the third ratio is 0.05 to 0.5; the fourth ratio is 0.036 to 0.36.

[0054] In some embodiments, the first area is 360 mm². 2 Up to 2700mm 2 .

[0055] A third aspect of this application provides a photovoltaic system comprising: any of the aforementioned photovoltaic modules.

[0056] The photovoltaic modules and photovoltaic systems mentioned above have the same or similar beneficial effects, and will not be repeated here to avoid repetition. Attached Figure Description

[0057] To more clearly illustrate the technical solutions in the embodiments of this application or the prior art, the drawings used in the description of the embodiments or the prior art will be briefly introduced below. Obviously, the drawings described below are some embodiments of this application. For those skilled in the art, other drawings can be obtained based on these drawings without creative effort.

[0058] Figure 1 shows a front cross-sectional view of a photovoltaic module according to an embodiment of this application;

[0059] Figure 2 shows a schematic diagram of the structure of a conductive layer in an embodiment of this application;

[0060] Figure 3 shows a schematic diagram of the structure of an insulating layer in an embodiment of this application;

[0061] Figures 4 and 5 show partial structural diagrams of the interaction between the conductive layer and the insulating layer in an embodiment of this application.

[0062] Explanation of the figure numbers: 1-Conductive backplate, 11-Insulating layer, 111-Through hole, 112-Bonding material, 12-Conductive layer, 13-Rear encapsulation film, 14-Backplate, 2-Back contact cell, 3-Front encapsulation film, 4-Glass, 121-Finger conductive structure, 122-Insulating gap, 1211-Head region of finger conductive structure, 1212-Tail region of finger conductive structure. Specific Implementation

[0063] To make the objectives, technical solutions, and advantages of the embodiments of this application clearer, the technical solutions of the embodiments of this application will be clearly and completely described below with reference to the accompanying drawings. Obviously, the described embodiments are only some embodiments of this application, not all embodiments. Based on the embodiments of this application, all other embodiments obtained by those skilled in the art without creative effort are within the scope of protection of this application.

[0064] Those skilled in the art should understand that, in the disclosure of this application, the terms "first," "second," "third," "fourth," "fifth," etc., are only used to distinguish different structures and do not limit the number of specific structures, connection relationships, etc.; in addition, the orientation or positional relationship indicated by "longitudinal," "lateral," "upper," "lower," "front," "rear," "left," "right," "vertical," "horizontal," "top," "bottom," "inner," "outer," etc., is based on the orientation or positional relationship shown in the accompanying drawings, and is only for the convenience of describing this application and simplifying the description, and is not intended to indicate or imply that the device or element referred to must have a specific orientation, or be constructed and operated in a specific orientation. Therefore, the above terms should not be construed as limitations on this application.

[0065] This application provides a photovoltaic module, which is explained below with reference to Figures 1 to 5. Referring to Figure 1, the photovoltaic module includes: a conductive backsheet 1, and back contact solar cells 2 disposed on the conductive backsheet 1. The photovoltaic module may further include: a front encapsulation film 3 and glass 4 located sequentially on the side of the back contact solar cells 2 facing away from the conductive backsheet 1.

[0066] The back contact cell includes a plurality of current collector grid lines extending along a first direction L1, which are used to collect and conduct current. These current collector grid lines can include N-type and P-type current collector grid lines. The current collector grid lines extend along the first direction L1, and current collector grid lines of different polarities are alternately and spaced along a second direction L2. This spacing helps prevent short circuits. The alternation means that along the second direction L2, an N-type current collector grid line is followed by a P-type current collector grid line, and then another N-type current collector grid line. The first direction L1 and the second direction L2 are different, and the angle between them is not limited; for example, they can be perpendicular or nearly perpendicular. The back contact cell can be a whole cell, or it can be a half cell, a three-part cell, a four-part cell, etc., without specific limitations.

[0067] Referring to Figure 1, the conductive backsheet 1 includes a conductive layer 12 and an insulating layer 11 located between the conductive layer 12 and the back contact cell 2. The conductive layer 12 is formed of a conductive material, such as a metal foil, for example, copper-aluminum foil, aluminum foil, aluminum-plated copper foil, nickel-plated copper foil, tin-plated copper foil, copper-plated aluminum foil, tin-plated aluminum foil, nickel-plated aluminum foil, etc., without specific limitations. The insulating layer 11 can be a single-layer or multi-layer structure. For example, the insulating layer 11 can be a PO (polypropylene oxide) / PE (polyethylene) / PF (phenolic resin) / PET (polyethylene terephthalate) laminate structure. Alternatively, the insulating layer 11 can be EPE (expandable polyethylene) or EVA (ethylene-vinyl acetate copolymer), and the color of the insulating layer can be white or black, etc. Referring to Figure 1, the conductive backsheet 1 may further include a post-encapsulation film 13 and a backsheet 14 sequentially stacked on the side of the conductive layer 12 facing away from the back contact cell 2. The material of the backing plate 14 can be selected from at least one of TPC (transparent backing plate), PET (polyethylene terephthalate) backing plate, TPT (polyvinyl fluoride composite film) backing plate, and CPC (double-sided coated type) backing plate.

[0068] Referring to Figures 2, 4, and 5, the conductive layer 12 includes a plurality of finger-shaped conductive structures 121 extending along a second direction L2, and insulating gaps 122 located between adjacent finger-shaped conductive structures 121. The first direction L1 is different from the second direction L2, and the included angle between them is not limited; for example, they can be perpendicular to each other. Referring to Figures 1, 3 to 5, through holes 111 are provided in the insulating layer 11. The shape and size of the through holes 111 are not specifically limited. For the same through hole 111, at one end of the through hole 111, a portion of the finger-shaped conductive structure 121 is exposed, and at the other end of the through hole 111, a portion of the collector grid line is exposed. A bonding material 112 can be provided in the through hole 111 to electrically connect the portion of the finger-shaped conductive structure 121 located at both ends of the same through hole 111 to the collector grid line at that location, thereby realizing current collection and conduction. The shape of the through hole 111 is not specifically limited; for example, it can be rectangular, circular, or other shapes. The bonding material 112 can be conductive adhesive, solder paste, etc., or the bonding material 112 can contain metal components such as silver, copper, lead, bismuth, zinc, and nickel. The specific composition of the bonding material 112 is not specifically limited.

[0069] In the conductive layer 12, within the region corresponding to a back contact battery cell 2, the number of finger-shaped conductive structures 121 is a first number, which is a natural number. When counting the number of finger-shaped conductive structures 121, all finger-shaped conductive structures 121 along a first direction must be included. For example, the conductive layer 12 in FIG. 2 contains a total of 10 finger-shaped conductive structures 121. The ratio of the width d1 of the insulating gap 122 to the first number is 18 to 125; the width d1 is in micrometers (μm). Referring to FIG. 2, 4, and 5, the width of the insulating gap is the distance between any two adjacent finger-shaped conductive structures. Referring to FIG. 4 and 5, when the outline of the insulating gap includes a straight line segment, the direction of the width d1 of the insulating gap at that straight line segment is perpendicular to the straight line segment; referring to FIG. 2, when the outline of the insulating gap includes a curved segment, the direction of the width d1 of the insulating gap 122 at that curved segment is perpendicular to the tangent of the curved segment outline of the insulating gap 122. The width d1 of the insulating gap in the conductive layer 12 can be the width of the insulating gap at any position in the conductive layer 12, or the average value of the widths of the insulating gaps at multiple positions in the conductive layer 12, and there is no specific limitation on it.

[0070] In this application, a portion of the finger-shaped conductive structure 121 at the through-hole 111 is electrically connected to the corresponding current collector grid line to achieve current collection and conduction. The width d1 of the insulating gap 122 in the conductive layer 12 affects the size of the finger-shaped conductive structure 121, and thus affects the resistance, affecting the current collection and conduction effect. Therefore, in the area of ​​the conductive layer 12 corresponding to a back contact cell 2, the first number of finger-shaped conductive structures 121 and the width d1 of the insulating gap 122 are closely related to the current conduction quality. Specifically, as the number of finger-shaped conductive structures 121 in the region corresponding to a back contact cell 2 in the conductive layer 12 increases, it is beneficial to increase the current collection capability of the back contact cell 2 and reduce resistance loss, thereby increasing the power of the photovoltaic module. However, when the number of finger-shaped conductive structures increases to a certain extent, the boundary effect of improving the current collection capability and reducing resistance loss decreases. Secondly, too many finger-shaped conductive structures 121 will also increase the difficulty of aligning the current collector grid and the conductive backplate 1, and increase the manufacturing precision requirements of the current collector grid and the conductive layer 12, thus increasing the manufacturing difficulty. In addition, too many finger-shaped conductive structures 121 will reduce the effective area of ​​the back contact cell 2 surface used for absorbing light, thereby reducing the photoelectric conversion efficiency. Furthermore, too many finger-shaped conductive structures 121 will increase the length of the insulation gap 122. Too many finger-shaped conductive structures 121 will also increase the bends in the waste wire removal process. During the waste removal process to form the insulation gap 122, the probability of the waste wire breaking increases. On the one hand, this will lead to a decrease in waste removal efficiency. On the other hand, some residual waste wires are prone to causing short circuits between adjacent finger-shaped conductive structures 121.To reduce the probability of waste wire breakage, increasing the width d1 of the insulation gap 122 would lead to excessive waste removal. Excessive waste removal would affect the effective area of ​​the conductive layer 12, which in turn would increase the overall resistivity, thus reducing current collection efficiency. Therefore, selecting an appropriate initial quantity requires finding a balance between the current collection capacity, resistance loss, light-illuminated area utilization, waste removal efficiency, and cost of the back-contact solar cell 2 to achieve the optimal performance-cost-effectiveness balance. Simultaneously, the insulation gap 122 between adjacent finger-shaped conductive structures 121 in the conductive layer 12 plays a crucial role... The main purpose is to avoid short circuits. Increasing the width d1 of the insulation gap 122 can reduce the risk of short circuits and the probability of waste wire tearing. However, if the width d1 of the insulation gap 122 is too large, more waste wire needs to be removed, resulting in more conductive material being removed from the conductive layer 12, leading to greater material waste, higher costs, and a smaller effective area of ​​the conductive layer 12, resulting in higher resistance. Conversely, if the width d1 of the insulation gap 122 is too small, the waste wire is more likely to tear during the waste removal process, resulting in lower waste removal efficiency and risks to insulation reliability. Therefore, selecting an appropriate width d1 for the insulation gap 122 is crucial. To find a balance between cost, resistance loss, short-circuit risk, and waste removal efficiency, an optimal balance between performance and cost-effectiveness is achieved. It should be noted that, considering multiple factors such as the current collection capacity of the back contact cell 2, resistance loss, alignment difficulty of the current collector grid and conductive backplate 1, light area utilization, waste removal efficiency, short-circuit risk, and cost, the first quantity here can be selected from 12 to 28, and the width d1 of the insulation gap 122 can be selected from 500μm to 1500μm. 500 / 28 = 17.8, 1500 / 12 = 125. Therefore, this application... In this photovoltaic module, the ratio of the width d1 of the insulation gap 122 to the first quantity is 18 to 125. This ratio range is a suitable range selected when the current transmission efficiency, resistance loss, light area utilization rate, short circuit risk, waste removal efficiency, cost and process of the back contact cell 2 are relatively balanced. Therefore, in this photovoltaic module, the back contact cell has strong current collection ability and low resistance loss, high light area utilization rate, high power generation efficiency, low manufacturing cost, relatively simple preparation process, high yield, low short circuit risk, low probability of waste wire tearing, and high waste removal efficiency.

[0071] For example, the ratio of the width d1 of the insulation gap 122 to the first quantity can be 18, 19.2, 20, 25, 30, 35, 40, 50, 60, 62.5, 70, 75, 80, 90, 93.75, 95, 100, 110, 120, or 125.

[0072] Table 1: Relationship between the width of the insulation gap, the number of gaps, and the success rate of insulation gap removal.

[0073] Table 2: Relationship between the width of the insulation gap, the number of primary gaps, and the power of the photovoltaic module.

[0074] Referring to Tables 1 and 2 above, Table 1 shows the relationship between the width and quantity of insulating gaps and the success rate of insulating gap removal for a conductive layer of a certain material in practical applications. Table 2 shows the relationship between the width and quantity of insulating gaps and the power of photovoltaic modules for the conductive layer of the same material in Table 1 in practical applications. In Tables 1 and 2, width refers to the width of the insulation gap, in millimeters. In Table 1, success rate refers to the probability that the waste wire will not break during the tearing process within the area corresponding to a back-contact solar cell in the conductive layer. To facilitate waste wire removal, a success rate of 80% or higher is typically required in practical applications. In Table 2, power variation refers to the power variation of a photovoltaic module with a first quantity of 18 and an insulation gap width of 800 μm, based on different insulation gap widths and first quantities, in W (watts). In practical applications, a power loss of less than 0.2 W is acceptable. In Tables 1 and 2, the first quantity refers to the number of finger-shaped conductive structures within the area corresponding to a back-contact solar cell in the conductive layer. From Table 1, it can be concluded that for the same first quantity, a larger insulation gap width generally results in a higher success rate. As can be seen from Table 2, for the same initial quantity, the larger the width of the insulation gap, the greater the power loss of the photovoltaic module; for the same width of the insulation gap, the power loss of the photovoltaic module generally decreases as the initial quantity increases.

[0075] Assuming a tear-off success rate of ≥80%: In Table 1, for quantities 10 and 11, the width of the insulation gap needs to be ≥300μm; for quantities 12 and 13, the width of the insulation gap needs to be ≥400μm; for quantity 14, the width of the insulation gap needs to be ≥500μm; for quantity 15, the width of the insulation gap needs to be ≥700μm; and for quantities 16, 17, and 18… In cases 19, 20, 21, and 22, the width of the insulation gap needs to be greater than or equal to 600 μm; in Table 1, in cases with the first quantity of 23, 24, and 25, the width of the insulation gap needs to be greater than or equal to 800 μm; in Table 1, in cases with the first quantity of 26, the width of the insulation gap needs to be greater than or equal to 1200 μm; in Table 1, in cases with the first quantity of 27, the width of the insulation gap needs to be greater than or equal to 1300 μm; in Table 1, in cases with the first quantity of 28, the width of the insulation gap needs to be greater than or equal to 1400 μm. Therefore, for insulation gaps between 500 μm and 1500 μm, for cases with the first quantity of 10 to 28, the requirement of a tear-off success rate of greater than or equal to 80% can be met; for insulation gaps between 600 μm and 1200 μm, for cases with the first quantity of 10 to 26, the requirement of a tear-off success rate of greater than or equal to 80% can be met. Considering that the power loss of the photovoltaic module is within 0.2W: In Table 2, when the first quantity is 13, the width of the insulation gap needs to be less than or equal to 500μm; in Table 2, when the first quantity is 14, the width of the insulation gap needs to be less than or equal to 600μm; in Table 2, when the first quantities are 15 and 16, the width of the insulation gap needs to be less than or equal to 700μm; in Table 2, when the first quantity is 17, the width of the insulation gap needs to be less than or equal to 800μm; in Table 2, when the first quantity is 18, the width of the insulation gap needs to be less than or equal to 900μm; and in Table 2, when the first quantity is 19, the width of the insulation gap needs to be less than or equal to 100μm. 0 μm; when the first quantity is 20, the width of the insulation gap needs to be less than or equal to 1100 μm; when the first quantity is 21, the width of the insulation gap needs to be less than or equal to 1200 μm; when the first quantity is 22, the width of the insulation gap needs to be less than or equal to 1300 μm; when the first quantity is 23, the width of the insulation gap needs to be less than or equal to 1500 μm; when the first quantity is 24, the width of the insulation gap needs to be less than or equal to 1600 μm; when the first quantities are 25 and 26, the width of the insulation gap needs to be less than or equal to 1700 μm; when the first quantities are 27 and 28, the width of the insulation gap needs to be less than or equal to 1800 μm.Therefore, for insulation gaps of 500μm to 1500μm, and for the first number of 12 to 28, the requirement of power loss of photovoltaic modules being within 0.2W can be met; for insulation gaps of 600μm to 1200μm, and for the first number of 14 to 28, the requirement of power loss of photovoltaic modules being within 0.2W can be met.

[0076] Therefore, in this application, referring to Tables 1 and 2 above, for the conductive layer of the above material, in order to meet both the aforementioned success rate requirement and the aforementioned power loss requirement: When the first quantity is 13, the width of the insulation gap is 400μm to 500μm. For example, the width of the insulation gap can be 400μm, 450μm, 420μm, 460μm, 480μm, or 500μm. The ratio of the width of the insulation gap to the first quantity is 30.77 to 38.46, where 400 / 13 = 30.77 and 500 / 13 = 38.46; When the first quantity is 14, the width of the insulation gap is 500μm to 600μm. For example, the width of the insulation gap can be... For insulation gaps of 500μm, 550μm, 520μm, 560μm, 580μm, and 600μm, the ratio of the width of the insulation gap to the first quantity is 35.71 to 42.86, where 500 / 14 = 35.71 and 600 / 14 = 42.86; for a first quantity of 15, the insulation gap width is 700μm, and the ratio of the insulation gap width to the first quantity is 46.67, where 700 / 15 = 46.67; for a first quantity of 16, the insulation gap width is 700μm, and the ratio of the insulation gap width to the first quantity is 43.75 (700 / 16 = 43.75); for a first quantity of 17, the insulation gap width is 600μm to 800μm. μm, for example, the width of the insulation gap can be 600μm, 700μm, 720μm, 750μm, 760μm, 780μm, 775μm, 800μm, and the ratio of the width of the insulation gap to the first quantity is 35.29 to 47.06, where 600 / 17 = 35.29 and 800 / 17 = 47.06; the first quantity is 18, and the width of the insulation gap is 600μm to 900μm, for example, the width of the insulation gap can be 600μm, 650μm, 700μm, 720μm, 750μm, 770μm, 790μm, 800μm, 810μm, 840μm, 850μm, 880μm, 9 For a first quantity of 19, the width of the insulation gap is greater than or equal to 33.33 to 50, where 600 / 18 = 33.33 and 900 / 18 = 50. For a first quantity of 19, the width of the insulation gap is 600μm to 1000μm. For example, the width of the insulation gap can be 600μm, 650μm, 700μm, 730μm, 750μm, 780μm, 800μm, 820μm, 850μm, 890μm, 900μm, 950μm, or 1000μm. The ratio of the width of the insulation gap to the first quantity is 31.58 to 52.63, where 600 / 19 = 31.58 and 1000 / 19 = 52.63; The first quantity is 20, and the width of the insulation gap is 600μm to 1100μm. For example, the width of the insulation gap can be 600μm, 650μm, 700μm, 800μm, 820μm, 850μm, 900μm, 930μm, 950μm, 990μm, 1000μm, 1080μm, 1050μm, or 1100μm. The ratio of the width of the insulation gap to the first quantity is 30 to 55, where 600 / 20 = 30 and 1100 / 20 = 55; The first quantity is 21, and the width of the insulation gap is 600μm to 1200μm. For example, the width of the insulation gap can be 600μm, 650μm, 700μm, 820μm, 850μm, 900μm, 930μm, 950μm, 990μm, 1000μm, 1080μm, 1050μm, or 1100μm. 00μm, 800μm, 850μm, 900μm, 950μm, 1000μm, 1050μm, 1100μm, 1150μm, 1200μm, the ratio of the width of the insulation gap to the first quantity is 28.57 to 57.14, where 600 / 21 = 28.57, 1200 / 21 = 57.14; the first quantity is 22, and the width of the insulation gap is 600μm to 1300μm, for example, the width of the insulation gap can be 600μm, 650μm, 700μm, 800μm, 850μm, 900μm, 950μm, 1000μm, 1050μm, 1100μm, 1150μm, 1 For the insulation gaps of 200μm, 1250μm, and 1300μm, the ratio of the width of the insulation gap to the first quantity is 27.27 to 59.1, where 600 / 22 = 27.27 and 1300 / 22 = 59.1; the first quantity is 23, and the width of the insulation gap is 800μm to 1500μm, for example, the width of the insulation gap can be 800μm, 900μm, 950μm, 1000μm, 1050μm, 1100μm, 1150μm, 1200μm, 1250μm, 1300μm, 1350μm, 1400μm, 1450μm, and 1500μm, and the ratio of the width of the insulation gap to the first quantity is 34.78 to... 59.1, where 800 / 23 = 34.78, 1500 / 23 = 65.22; the first quantity is 24, and the width of the insulation gap can be from 800μm to 1600μm. For example, the width of the insulation gap can be 800μm, 900μm, 950μm, 1000μm, 1050μm, 1100μm, 1150μm, 1200μm, 1250μm, 1300μm, 1350μm, 1400μm, 1450μm, 1500μm, or 1600μm. The ratio of the width of the insulation gap to the first quantity is 33.33 to 66.67, where 800 / 24 ​​= 33.33, 1600 / 24 ​​= 66.67; The first quantity is 25, and the width of the insulation gap can be from 800μm to 1700μm. For example, the width of the insulation gap can be 800μm, 900μm, 950μm, 1000μm, 1050μm, 1100μm, 1150μm, 1200μm, 1250μm, 1300μm, 1350μm, 1400μm, 1450μm, 1500μm, 1600μm, or 1700μm. The ratio of the insulation gap width to the first quantity is 32 to 68, where 800 / 25 = 32 and 1700 / 25 = 68; the first quantity is 26, and the width of the insulation gap can be 1200μm to 1700μm, for example, the width of the insulation gap can be 1200μm, 1250μm, 1300μm, 1350μm, 1400μm, 1450μm, 1500μm, 1600μm, 1700μm, and the ratio of the width of the insulation gap to the first quantity is 32 to 6. 8, where 1200 / 26 = 46.15, 1700 / 26 = 65.38; the first quantity is 27, and the width of the insulation gap can be from 1300μm to 1800μm, for example, the width of the insulation gap can be 1300μm, 1350μm, 1400μm, 1450μm, 1500μm, 1600μm, 1700μm, 1800μm, and the ratio of the width of the insulation gap to the first quantity is 48.15 to 66.67, where 13 00 / 27 = 48.15, 1800 / 27 = 66.67; the first quantity is 28, and the width of the insulation gap can be from 1400μm to 1800μm, for example, the width of the insulation gap can be 1400μm, 1450μm, 1500μm, 1600μm, 1700μm, or 1800μm. The ratio of the width of the insulation gap to the first quantity is 50 to 64.29, where 1400 / 28 = 50 and 1800 / 28 = 64.29.

[0077] It should be noted that this application does not limit the method of removing the conductive layer; for example, it can be laser etching, acid etching, mold stamping, etc.

[0078] In some embodiments, the width d1 of the insulation gap 122 is between 500µm and 1500µm. Within this range, the width d1 of the insulation gap 122 strikes a good balance between cost, resistance loss, short-circuit risk, and waste removal efficiency, achieving an optimal balance between performance and cost-effectiveness. Furthermore, referring to Tables 1 and 2 above, within the aforementioned range, a larger number of first quantities can satisfy both the aforementioned success rate requirements and the aforementioned power loss requirements, meaning a high tear-off success rate and low power loss.

[0079] For example, the width d1 of the insulation gap 122 can be 500μm, 600μm, 700μm, 750μm, 800μm, 850μm, 900μm, 1000μm, 1200μm, 1300μm, or 1500μm.

[0080] In some embodiments, the width d1 of the insulation gap 122 is between 600µm and 1200µm. Within this range, the width d1 of the insulation gap 122 strikes a good balance between cost, resistance loss, short-circuit risk, and waste removal efficiency, achieving an optimal balance between performance and cost-effectiveness. Furthermore, referring to Tables 1 and 2 above, a larger number of first elements within the aforementioned d1 range can achieve a higher success rate and lower power loss; that is, a higher tear-off success rate and lower power loss.

[0081] For example, the width d1 of the insulation gap 122 can be 600μm, 650μm, 680μm, 1200μm, 700μm, 750μm, 800μm, 850μm, 900μm, 1000μm, or 1100μm.

[0082] In some embodiments, the number of finger-shaped conductive structures 121 in the region corresponding to a back contact cell 2 in the conductive layer 12 is a first number, ranging from 12 to 28. Within this range, a good balance is achieved between the current collection capability, resistance loss, light area utilization, waste removal efficiency, and cost of the back contact cell 2, resulting in an optimal balance between performance and cost-effectiveness. Moreover, in conjunction with Tables 1 and 2 above, to meet both the aforementioned success rate and power loss requirements, the aforementioned first number allows for a wider selection of insulation gap widths, resulting in a higher tear-off success rate and lower power loss, while also providing a wider range of insulation gap width options.

[0083] For example, the first quantity can be 12, 13, 14, 15, 16, 18, 20, 24, 17, 19, 21, 22, 23, 24, 25, 26, 27, 28.

[0084] In some embodiments, the number of finger-shaped conductive structures 121 in the region corresponding to a back contact cell 2 in the conductive layer 12 is a first number, ranging from 16 to 24. Within this range, a good balance is achieved between the current collection capability, resistance loss, light area utilization, waste removal efficiency, and cost of the back contact cell 2, resulting in an optimal balance between performance and cost-effectiveness. Furthermore, in conjunction with Tables 1 and 2 above, the aforementioned first number corresponds to a higher tear-off success rate and less power loss, and offers a wider selection of insulation gap widths. This means a higher tear-off success rate, lower power loss, and a greater range of insulation gap width options.

[0085] For example, the first quantity can be 16, 18, 20, 24, 17, 19, 21, 22, 23, or 24.

[0086] In some embodiments, the length of the insulating gap 122 in the region corresponding to a back contact battery cell 2 within the conductive layer 12 is a first length. This first length is the dimension of the insulating gap 122 in the region corresponding to a back contact battery cell 2 within the conductive layer 12, along the extending direction of the insulating gap 122. In the region corresponding to a back contact battery cell 2 within the conductive layer 12, along the extending direction of the insulating gap 122, the insulating gap 122 includes curved segments and straight segments; therefore, the first length here is the sum of the lengths of the curved segments and the straight segments it contains. In the conductive layer 12, within the region corresponding to a back contact battery cell 2, the longer the length of the insulating gap 122, the greater the probability of the waste wire breaking during the tearing process, resulting in low waste removal efficiency. Simultaneously, in the conductive layer 12, within the region corresponding to a back contact battery cell 2, the length of the insulating gap 122 is approximately equal to the length of the outline of the finger-shaped conductive structure 121 within the same region. If this first length is too short, the size of the finger-shaped conductive structure 121 within the same region will be small, leading to poor current collection and high resistance loss. Therefore, selecting a suitable first length requires finding a balance between waste removal efficiency, current collection, and resistance loss. Increasing the width d1 of the insulation gap 122 can reduce the risk of short circuits and the probability of waste wire tearing. However, if the width d1 of the insulation gap 122 is too large, more waste wire will be removed from the insulation gap 122, resulting in more material waste and higher costs. In addition, the effective area of ​​the conductive layer 12 will be smaller, leading to higher resistance. On the other hand, if the width d1 of the insulation gap 122 is too small, the waste wire is easily torn during the waste removal process, resulting in lower waste removal efficiency and risks to insulation reliability. Therefore, choosing a suitable width d1 for the insulation gap 122 is to find a balance between cost, resistance loss, short circuit risk, and waste removal efficiency to achieve the best performance and cost-effectiveness balance. When the units of the first length and the width of the insulation gap 122 are the same, a ratio of 1200 to 9000 for the first length to the width d1 of the insulation gap 122 is the result of a good balance between waste removal efficiency, current collection, resistance loss, cost, and short circuit risk. It should be noted that at each location of the insulation gap 122, the direction of its length is perpendicular to the direction of its width.

[0087] For example, the ratio of the first length to the width of the insulation gap can be 1200, 1500, 1800, 2000, 2500, 3000, 3200, 3500, 4000, 4500, 5000, 5500, 6000, 6500, 7000, 7500, 8000, 8500, or 9000.

[0088] It should be noted that the specific length of the first length of the insulating gap 122 in the region corresponding to a back contact cell 2 in the conductive layer 12 is not limited. For example, the first length can be: 1655mm, 1287mm, 1379mm, 1287mm, 1471mm, 1563mm, 1747mm, 1800mm, 1839mm, 1931mm, 2023mm, 2115mm, 2207mm, etc.

[0089] It should be noted that the proportions or ratios between one-dimensional dimensions, such as length and width, mentioned throughout this application refer to the range of proportions when the units of the aforementioned dimensions are the same.

[0090] In some embodiments, referring to FIG2, the length of the finger-shaped conductive structure 121 is d2, and the direction of the length d2 of the finger-shaped conductive structure 121 is parallel to the second direction L2. If the length d2 of the finger-shaped conductive structure 121 is small, the current collection effect is poor and the resistance loss is large. If the length d2 of the finger-shaped conductive structure 121 is large, it is easy to tear during the process of tearing off waste wire, resulting in low waste removal efficiency. Therefore, selecting an appropriate length of the finger-shaped conductive structure 121 is the result of optimizing the balance between current collection effect, resistance loss and waste removal efficiency. Increasing the width d1 of the insulation gap 122 can reduce the risk of short circuits and the probability of waste wire breakage. However, if the width d1 of the insulation gap 122 is too large, more waste will be removed from the insulation gap 122, resulting in more conductive material being removed from the conductive layer 12, leading to more material waste, higher costs, and a smaller effective area of ​​the conductive layer 12, resulting in higher resistance. On the other hand, if the width d1 of the insulation gap 122 is too small, the waste wire is easily torn during the waste removal process, resulting in lower waste removal efficiency and risks to insulation reliability. Therefore, choosing an appropriate width d1 for the insulation gap 122 is to find a balance between cost, resistance loss, short circuit risk, and waste removal efficiency to achieve the best performance and cost-effectiveness balance. The ratio of the length d2 of the finger conductive structure 121 to the width d1 of the insulation gap 122 is 60 to 450, which is also the result of achieving a good balance between waste removal efficiency, current collection, resistance loss, cost, and short circuit risk.

[0091] It should be noted that the length d2 of the finger-shaped conductive structure 121 can be: the length of any one finger-shaped conductive structure 121 in the conductive layer 12, or the average length of multiple finger-shaped conductive structures 121 in the conductive layer 12, without any specific limitation.

[0092] For example, the ratio of the length d2 of the finger-shaped conductive structure 121 to the width d1 of the insulating gap 122 can be 60, 70, 90, 100, 120, 150, 200, 220, 250, 255, 280, 300, 350, 360, 380, 400, 420, 440, or 450.

[0093] In some embodiments, referring to Figures 2, 4, and 5, in the second direction L2, the finger-like conductive structure 121 includes opposing head region 1211 and tail region 1212, and an intermediate region connecting the head region 1211 and tail region 1212. The intermediate region contains the center of the finger-like conductive structure, and the center of the intermediate region may or may not coincide with the center of the finger-like conductive structure; this is not specifically limited. The center of the head region 1211, the center of the finger-like conductive structure, and the center of the tail region 1212 may be collinear. The width of the head region 1211 is less than or equal to the width of the tail region 1212, and the direction in which the width of this region lies is parallel to the first direction L1. It should be noted that the relative size of the widths of the intermediate region and the head region 1211 is not limited. For example, in Figures 2 and 4, the width of the intermediate region is greater than the width of the head region 1211, and in the second direction L2, the width of the finger-like conductive structure 121 increases from the head region 1211 to the tail region 1212. For example, in Figure 5, the width of the middle region is equal to the width of the head region 1211. Here, the width of the head region 1211 can refer to the width at any position in the head region, or the average of the widths at multiple positions. The widths of the middle region and the tail region 1212 are determined in the same way as the width of the head region. For example, in Figure 2, the width of the tail region 1212 can be as shown by d3 in Figure 2.

[0094] In some embodiments, for a finger-shaped conductive structure 121: the width of the insulating gap 122 at the head region 1211 and the width of the insulating gap 122 at the tail region 1212 are both greater than or equal to the width of the insulating gap 122 at the middle region. Specifically, for a finger-shaped conductive structure 121: there are many bends or inflection points at the head region 1211 and the tail region 1212. During the waste wire removal process, the stress is greater or stress concentration is more likely to occur at these locations, and the waste wire is usually easy to tear. However, the middle region is relatively straight, and the waste wire is usually not easy to tear. Therefore, for a finger-shaped conductive structure 121: the width of the insulation gap 122 at the head region 1211 and the width of the insulation gap 122 at the tail region 1212 are both larger. During the waste removal process, it is not easy to tear at the head region 1211 and the tail region 1212 where there are many bends or inflection points. The waste removal continuity is higher and the waste removal efficiency is higher. Moreover, the width of the insulation gap 122 at the middle region is smaller, and the size of the retained finger-shaped conductive structure is larger, which can also reduce resistance loss. For a finger-shaped conductive structure 121: the width of the insulating gap 122 at the head region 1211 refers to the width of the insulating gap 122 at any position of the head region 1211, or the average of the widths at multiple positions, or it can refer to the width of the insulating gap 122 at either side of the center position of the head region 1211 along the first direction L1, or the average of the widths on both sides. The determination methods for the width of the insulating gap 122 at the tail region 1212 and the width of the insulating gap 122 at the middle region are the same as those for the width of the insulating gap 122 at the head region 1211, and will not be repeated here.

[0095] It should be noted that, in this case, there is no specific limitation on whether the width of the insulation gap 122 at the head region 1211 is equal to the width of the insulation gap 122 at the tail region 1212, nor is there a specific limitation on their relative size. There is also no specific limitation on the difference between the width of the insulation gap 122 at the head region 1211, the width of the insulation gap 122 at the tail region 1212, and the width of the insulation gap 122 at the middle region.

[0096] It should be noted that the head region 1211 of a finger-shaped conductive structure 121 includes the endpoint of the finger-shaped conductive structure in the head region, and the tail region 1212 of a finger-shaped conductive structure 121 includes the endpoint of the finger-shaped conductive structure in the tail region. These two endpoints are opposite each other in the second direction L2. Typically, the area of ​​the head region 1211 of a finger-shaped conductive structure 121 can be smaller than the area of ​​its tail region. For a finger-shaped conductive structure 121, in this application, the division of its head region 1211, middle region, and tail region 1212 can be as follows: in the second direction, the length of the head region 1211 can be less than or equal to the length of the tail region, and the length of the middle region can be greater than or equal to the length of the tail region. For example, for a finger-shaped conductive structure 121, the length of the head region 1211 in the second direction is 1 / 5 of the finger-shaped conductive structure, the length of the tail region in the second direction can be 3 / 10 of the finger-shaped conductive structure, and the length of the middle region in the second direction can be 1 / 2 of the finger-shaped conductive structure. Alternatively, for a finger-shaped conductive structure 121, the length of the head region 1211 and the length of the tail region 1212 in the second direction are both 1 / 5 of the length of the finger-shaped conductive structure, and the length of the tail region in the second direction can be 3 / 5 of the length of the finger-shaped conductive structure.

[0097] In some embodiments, referring to Figures 2, 4, and 5, the width of the finger-like conductive structure 121 at the center of the head region 1211 is a first width d4; the width of the finger-like conductive structure at its center is a second width d5. The directions of both the first width d4 and the second width d5 ​​are parallel to the first direction L1. For a finger-like conductive structure 121: the ratio of the width of the insulating gap 122 at the center of the head region 1211 to the first width is a first ratio; the ratio of the width of the insulating gap 122 at the center of the finger-like conductive structure 121 to the second width is a second ratio. For the same finger-shaped conductive structure 121, the first ratio is greater than or equal to the second ratio. That is, relative to the center position of the finger-shaped conductive structure, the width of the insulation gap 122 is relatively larger at the center position of the head region 1211 of the finger-shaped conductive structure. Specifically, for a finger-shaped conductive structure 121: there are many bends or inflection points at the head region 1211, and the stress is greater at these positions during the waste wire removal process, and the waste wire is usually easy to tear. In contrast, the middle region is relatively straight, and the waste wire is usually not easy to tear. Since the center position of the finger-shaped conductive structure 121 is usually relatively straight, for a finger-shaped conductive structure 121: the width of the insulation gap 122 at the head region 1211 is relatively larger. Therefore, during the waste removal process, the waste wire is not easy to tear at the head region 1211, which has many bends or inflection points, resulting in higher continuity and efficiency in waste removal. The width of the insulating gap 122 at the center of the head region 1211 can be the width of the insulating gap 122 on either side of the center of the head region 1211 along the first direction L1, or the average of the widths on both sides. The method for determining the width of the insulating gap 122 at the center of the finger-shaped conductive structure 121 is the same as the method for determining the width of the insulating gap 122 at the center of the head region 1211, and will not be repeated here.

[0098] In some embodiments, for a finger-shaped conductive structure 121: the width of the insulation gap 122 at the center of the head region 1211 is in a first ratio to the first width, the first ratio being 6 to 44. The width of the insulation gap is related to both insulation effect and waste removal efficiency, and the width of the finger-shaped conductive structure is related to both conductivity efficiency and resistance loss. Within this range, the first ratio achieves a good balance between insulation effect, waste removal efficiency, conductivity efficiency, and resistance loss, which is beneficial to improving the performance of photovoltaic modules.

[0099] For example, the first ratio can be 6, 8, 10, 15, 20, 25, 30, 33, 35, 40, 42, or 44.

[0100] The width of the insulating gap 122 at the center of the finger-shaped conductive structure 121 is in the ratio of a second width to a second ratio of 8 to 55. Similarly, within this range, the insulation effect, waste removal efficiency, conductivity and resistance loss are well balanced, which is beneficial to improving the performance of photovoltaic modules.

[0101] For example, the second ratio can be 8, 10, 12, 15, 20, 25, 30, 31.5, 35, 40, 45, 50, 52, or 55.

[0102] In some embodiments, for a finger-shaped conductive structure 121, the ratio of the width of the insulating gap at the center of the head region 1211 to the width of the insulating gap at the center of the finger-shaped conductive structure 121 is 1 to 3. When the ratio is 1, the width of the insulating gap at the center of the head region 1211 is equal to the width of the insulating gap at the center of the finger-shaped conductive structure 121, the process parameters for setting the insulating gap are compatible, and the process for setting the insulating gap is simple. When the ratio is greater than 1 and less than or equal to 3, on the one hand, the head region 1211 has many bends or inflection points, resulting in greater stress at these locations during waste wire removal, making the waste wires prone to tearing. In contrast, the center of the finger-shaped conductive structure is usually relatively straight, making the waste wires less likely to tear. Therefore, for a finger-shaped conductive structure 121, the width of the insulation gap 122 at the head region 1211 is relatively larger, making it less likely to tear at the head region 1211 with its many bends or inflection points during waste removal, resulting in higher continuity and efficiency. On the other hand, the width of the insulation gap 122 at the head region 1211 is not excessively large, avoiding material waste. The method for determining the width of the insulation gap at the center of the head region 1211 is as described above. The method for determining the width of the insulation gap at the center of the finger-shaped conductive structure corresponds to the method for determining the width of the insulation gap at the center of the head region 1211, and will not be repeated here to avoid repetition.

[0103] For example, for a finger-shaped conductive structure 121, the ratio of the width of the insulating gap 122 at the center of the head region 1211 to the width of the insulating gap 122 at the center of the finger-shaped conductive structure can be 1, 1.2, 1.5, 1.8, 2, 2.2, 2.5, 2.6, 2.7, 2.8, 2.9, or 3.

[0104] In some embodiments, referring to Figures 2, 4, and 5, in the same finger-shaped conductive structure 121: the width at the center of the tail region 1212 is the third width d3, and the width at the center of the head region 1211 is the first width d4; the ratio of the third width d3 to the first width d4 is 2.5 to 5. Specifically, in the same finger-shaped conductive structure 121, current usually concentrates from the head region 1211 to the tail region 1212, or in other words, in the same finger-shaped conductive structure 121, the current flowing through the tail region 1212 is larger. If the ratio of d3 to d4 is less than 2.5, the width of the tail region 1212 is too small and cannot accommodate a large current. If the ratio of d3 to d4 is greater than 2.5, the width of the tail region 1212 is too large and can accommodate a large current for fast and efficient transmission, but this would lead to material waste. Therefore, the ratio of the third width d3 to the first width d4 is 2.5 to 5, which not only facilitates efficient current transmission and collection but also avoids material waste.

[0105] For example, the ratio of the third width d3 to the first width d4 can be 2.5, 2.6, 2.8, 3, 3.3, 3.5, 3.7, 3.9, 4, 3.75, 4.5, 4.2, 4.8, or 5.

[0106] In some embodiments, an electrical connection portion is electrically connected to the current collector grid line. This electrical connection portion is used to electrically connect with conductive interconnects (such as the finger-shaped conductive structure 12) to collect current. The electrical connection portion is located within a through-hole 111 of the insulating layer 11. A portion of the finger-shaped conductive structure 12 is electrically connected to the current collector grid line through the electrical connection portion. For example, the bonding material 112 is disposed on the surface of the electrical connection portion facing away from the current collector grid line. The electrical connection portion and the bonding material 112 thereon are located within the through-hole 111, contacting a portion of the finger-shaped conductive structure 12 to achieve electrical connection.

[0107] It should be noted that the electrical connection portion can be directly disposed on the current collector grid line. The electrical connection portion can be part of the current collector grid line itself or be disposed separately. When the electrical connection portion is part of the current collector grid line itself, the electrical connection portion can be a thickened section of the current collector grid line. Therefore, the back contact cell 2 of this application can be a back contact cell with no or few current collector grid lines, which can reduce silver paste loss, improve cell efficiency and module power, and has many advantages, allowing it to enter the mass production stage more quickly. Alternatively, the back contact cell 2 may also include: current collector grid lines, which extend along the second direction L2. Current collector grid lines with different polarities are alternately and spaced along the first direction L1. The spacing here can avoid short circuits. The alternation here means that the current collector grid lines with different polarities are N-type current collector grid lines and P-type current collector grid lines, with the N-type current collector grid lines having the same polarity and the P-type current collector grid lines having the same polarity. The alternation here refers to the distribution of one or more N-type busbars followed by one or more P-type busbars and then another or more N-type busbars in the first direction L1. Collector lines and busbars of the same polarity are electrically connected, and this connection is achieved through intersection. The electrical connection portion can be located on the busbar; it can be part of the busbar itself or a separate component. When the electrical connection portion is part of the busbar itself, it can be a thickened section of the busbar.

[0108] In some embodiments, the head region 1211 includes an endpoint away from the tail region 1212. Referring to FIG4, the endpoint of the finger-shaped conductive structure 121 and its projection on the conductive layer 12 are located within the finger-shaped conductive structure 121, and the distance d6 between the via 111 adjacent to the endpoint of the finger-shaped conductive structure 121 and the current collection point at the end of the finger-shaped conductive structure 121 is 0.3 mm to 1 mm. The via 111 adjacent to the endpoint of the finger-shaped conductive structure 121 corresponds to the current collection point at the end of the finger-shaped conductive structure 121. If d6 is set too large, the current transmission distance is too long, resulting in more losses. If d6 is set too small, the collection performance of the current collection point may not be fully utilized, resulting in material waste. Therefore, d6 within this range is the result of an optimized balance between better current collection effect and cost, which can ensure current collection efficiency while setting more finger-shaped conductive structures.

[0109] For example, d6 can be 0.3mm, 0.4mm, 0.45mm, 0.5mm, 0.55mm, 0.6mm, 0.7mm, 0.75mm, 0.8mm, 0.65mm, 0.9mm, or 1mm.

[0110] In some embodiments, the length of the back contact cell 2 in the first direction L1 is 160mm to 220mm, and the width of the back contact cell is less than or equal to the length. The size of the back contact cell 2 is suitable, which can achieve better results in carrier collection. On the other hand, the size of the photovoltaic module formed by the back contact cell 2 of this size is more compatible with the size of existing shipping equipment such as containers, which facilitates transportation and storage.

[0111] For example, the length of the back contact battery cell 2 in the first direction L1 can be 160mm, 166mm, 182mm, 188mm, 190mm, 192mm, 170mm, 180mm, 200mm, 210mm, or 220mm.

[0112] In some embodiments, the length of the insulating gap 122 in the region corresponding to a back contact cell 2 in the conductive layer 12 is a first length. The ratio of the length of the back contact cell 2 in the first direction L1 to the first length is 0.09 to 0.12. The longer the back contact cell 2 is, the larger its corresponding first length may be. However, the larger the first length is, the greater the probability of the waste wire breaking. In this application, the ratio of the length of the back contact cell 2 in the first direction L1 to the first length is within the above range, which can not only reduce the probability of waste wire breaking, but also achieve better results in carrier collection.

[0113] For example, the ratio of the length of the back contact battery cell 2 in the first direction L1 to the first length can be 0.09, 0.095, 0.1, 0.099, 0.11, 0.113, 0.115, 0.118, 0.119, or 0.12.

[0114] In some embodiments, the ratio of the width of the back contact cell 2 to the width d1 of the insulation gap 122 is between 65 and 485. A larger width of the back contact cell 2 typically corresponds to a larger first length, but a larger first length increases the probability of wire breakage. A larger insulation gap width d1 may reduce the probability of wire breakage, but it can easily lead to material waste. In this application, the ratio of the width of the back contact cell 2 to the width d1 of the insulation gap is within the above range, which not only reduces the probability of wire breakage but also achieves better results in carrier collection and reduces waste. The direction in which the width of the back contact cell is located is perpendicular to the first direction L1.

[0115] For example, the ratio of the width of the back contact cell 2 to the width d1 of the insulation gap 122 can be 65, 80, 95, 100, 125, 150, 165, 180, 200, 225, 250, 275, 280, 300, 350, 365, 400, 415, 450, 465, or 485.

[0116] In some embodiments, the photovoltaic module further includes an alloy layer located between the finger-shaped conductive structure 121 and the collector grid lines electrically connected to the finger-shaped conductive structure 121. The alloy layer here can be an alloy layer located between the bonding material and the collector grid lines, and / or an alloy layer located between the bonding material and the finger-shaped conductive structure 121. The material of the alloy layer is not specifically limited. By forming this alloy layer, the reliability of the electrical connection between the finger-shaped conductive structure 121 and the collector grid lines electrically connected to the finger-shaped conductive structure 121 can be further improved, thereby further enhancing the current collection effect.

[0117] This application also provides another photovoltaic module, referring to FIG1, which includes: a conductive backsheet 1, and a back contact cell 2 disposed on the conductive backsheet 1. The photovoltaic module may further include: a front encapsulation film 3 and a glass 4 located sequentially on the side of the back contact cell 2 facing away from the conductive backsheet 1.

[0118] The back contact cell includes a plurality of current collector grid lines extending along a first direction L1, which are used to collect and conduct current. Referring to Figure 1, the conductive backplate 1 includes a conductive layer 12 and an insulating layer 11 located between the conductive layer 12 and the back contact cell 2. The conductive backplate 1 may further include a post-encapsulation film 13 and a backplate 14 sequentially stacked on the side of the conductive layer 12 facing away from the back contact cell 2. Referring to Figures 2, 4, and 5, the conductive layer 12 includes a plurality of finger-shaped conductive structures 121 extending along a second direction L2 and insulating gaps 122 located between adjacent finger-shaped conductive structures 121. The first direction L1 is different from the second direction L2, and the included angle between them is not limited. Referring to Figures 1, 3 to 5, through holes 111 are formed in the insulating layer 11. For the same through-hole 111, at one end of the through-hole 111, a portion of the finger-shaped conductive structure 121 is exposed, and at the other end of the through-hole 111, a portion of the collector grid line is exposed. A bonding material 112 can be provided in the through-hole 111 to electrically connect the portions of the finger-shaped conductive structure 121 located at both ends of the same through-hole 111 to the collector grid line at that location, thus achieving current collection and conduction. The conductive backsheet and back contact cells in this photovoltaic module can be referred to the corresponding descriptions above; to avoid repetition, they will not be repeated here.

[0119] The first type of photovoltaic module is mainly introduced from the perspectives of quantity and one-dimensional dimensions, while the second type is mainly introduced from the perspective of area. Both types of photovoltaic modules belong to the same technical concept: strong current collection capability and low resistance loss of back-contact solar cells, high light area utilization, high power generation efficiency of back-contact solar cells, low manufacturing cost, relatively simple manufacturing process, high yield, low short-circuit risk, low probability of waste wire breakage, and high waste removal efficiency. The following mainly focuses on the differences between the second and first types of photovoltaic modules, and will not repeat the similarities between the two types.

[0120] The area of ​​all insulating gaps in the region corresponding to a back contact solar cell 2 in the conductive layer 12 is the first area. The area of ​​the region in the conductive layer 12 corresponding to a back contact solar cell 2 is the second area. The proportion of the first area to the second area is 1% to 40%. If the proportion of the first area to the second area is less than 1%, the first area is too small, or the size of the insulation gap is small. During the waste removal process, the waste wires may be easily torn, resulting in low waste removal efficiency and risks to insulation reliability. If the proportion of the second area to the second area is greater than 40%, the first area is too large, or the size of the insulation gap is large. More waste is removed, meaning more conductive material is removed from the conductive layer 12, resulting in more material waste, higher costs, and a smaller effective area of ​​the conductive layer 12, leading to higher resistance. In this application, the proportion of the first area to the second area is 1% to 40%. In this photovoltaic module, the back contact cell has a strong current collection capability and low resistance loss, a high light area utilization rate, high power generation efficiency, low manufacturing cost, relatively simple preparation process, high yield, low short circuit risk, low probability of waste wire tearing, and high waste removal efficiency.

[0121] For example, the percentage of the first area to the second area can be 1%, 2%, 5%, 7.5%, 10%, 11.2%, 14%, 15%, 20%, 25%, 30%, 35%, or 40%. As another example, the area of ​​the region in the conductive layer 12 corresponding to a back-contact battery cell 2 can be 17707 mm². 2 The length of all insulating gaps in the conductive layer 12 corresponding to the back contact battery cell 2 is 1655 mm, and the width of the insulating gaps is 1.5 mm. Therefore, the first area can be 1655 × 1.5 = 2482.5 mm². 2 Therefore, the ratio of the first area to the second area can be 2482.5 / 17707 = 14.02%. For example, the area of ​​the region in the conductive layer 12 corresponding to a back contact battery cell 2 can be 17707 mm². 2The length of all insulating gaps in the conductive layer 12 corresponding to the back contact battery cell 2 is 1655 mm, and the width of the insulating gaps is 0.8 mm. Therefore, the first area can be 1655 × 0.8 = 1324 mm². 2 Therefore, the proportion of the first area to the second area can be 1324 / 17707 = 7.48%.

[0122] Table 3: Ratio of First Area to Second Area

[0123] For example, referring to Table 3 above, which shows the proportion of the first area to the second area in 11 types of photovoltaic modules, the width of the insulation gap in all 11 types of photovoltaic modules is 0.8mm.

[0124] It should be noted that the first area can refer to the area of ​​all insulating gaps in the region corresponding to any one back contact battery cell 2 in the conductive layer 12, or the average area of ​​all insulating gaps in the regions corresponding to multiple back contact battery cells 2 in the conductive layer 12. The method for determining the second area is the same as or similar to the method for determining the first area, and will not be repeated here.

[0125] In some embodiments, in the region of the conductive layer corresponding to a back contact cell, the area of ​​all insulating gaps is a first area, which is 360 mm². 2 Up to 2700mm 2 Within this first area, the back contact cell has a strong current collection capability and low resistance loss, a high light area utilization rate, high power generation efficiency, low manufacturing cost, relatively simple preparation process, high yield, low short circuit risk, low probability of waste wire tearing, and high waste removal efficiency.

[0126] For example, the first area can be 360 ​​mm². 2 380mm 2 400mm 2 500mm 2 1000mm 2 1300mm 2 1324mm 2 1500mm 2 2000mm 2 2200mm 2 2482.5mm 2 2500mm 2 2700mm 2 .

[0127] In some embodiments, the area of ​​a finger-shaped conductive structure 121 is a third area, and the area of ​​the insulating gap 122 outside the finger-shaped conductive structure 121 is a fourth area; the ratio of the third area to the fourth area is 3.4 to 4.5. If the ratio of the third area to the fourth area is less than 3.4, the area of ​​the finger-shaped conductive structure 121 is too small, resulting in poor current collection capability and high resistance loss of the back contact cell 2. If the area of ​​the insulating gap 122 outside the finger-shaped conductive structure 121 is too large, it leads to excessive waste and high cost. If the ratio of the third area to the fourth area is greater than 4.5, the area of ​​the finger-shaped conductive structure 121 is too large, and the number of finger-shaped conductive structures 121 may be too large, making it difficult to align the current collector wires and the conductive backplate 1, increasing the manufacturing precision requirements for the current collector wires and the conductive layer 12, increasing manufacturing difficulty, and reducing the surface area of ​​the back contact cell 2. The effective area used for absorbing light reduces the photoelectric conversion efficiency. At the same time, too many finger-shaped conductive structures 121 will increase the bends in the waste wire removal process, and the probability of waste wire tearing will increase during the waste removal process that forms the insulating gap 122, thus reducing the waste removal efficiency. Therefore, in this application, the ratio of the third area to the fourth area is 3.4 to 4.5. The back contact cell has a strong current collection capability and low resistance loss, a high light area utilization rate, high power generation efficiency, low manufacturing cost, relatively simple preparation process, high yield, low short circuit risk, low probability of waste wire tearing, and high waste removal efficiency.

[0128] For example, the ratio of the third area to the fourth area can be 3.4, 3.45, 3.5, 3.6, 3.7, 3.8, 3.8, 4, 4.1, 4.2, 4.3, 4.4, or 4.5.

[0129] It should be noted that the third area can be the area of ​​any finger-shaped conductive structure 121 in the conductive layer.

[0130] In some embodiments, within the region corresponding to a back contact cell in the conductive layer 12, the total area of ​​all finger-shaped conductive structures is the fifth area, and the ratio of the first area to the fifth area is 0.02 to 0.24. If the ratio of the first area to the fifth area is less than 0.02, the first area is too small, or the size of the insulation gap is too small. During the waste removal process, the waste wires may easily tear, resulting in low waste removal efficiency and a risk to insulation reliability. Simultaneously, if the fifth area is too large, the alignment of the current collector wires and the conductive backplate 1 becomes more difficult, increasing the manufacturing precision requirements for the current collector wires and the conductive layer 12, increasing manufacturing difficulty, and reducing the effective area on the surface of the back contact cell 2 for absorbing light, thereby reducing photoelectric conversion efficiency. Furthermore, excessive finger-shaped conductive structures 121 also increase the bends during waste wire removal, increasing the probability of waste wire tearing during the waste removal process that forms the insulation gap 122, thus reducing waste removal efficiency. If the ratio of the first area to the fifth area is greater than 0.24, the first area is too large, or... The larger size of the insulation gap leads to more waste material removal, resulting in greater material waste and higher costs in the conductive layer 12. Furthermore, the smaller effective area of ​​the conductive layer 12 results in higher resistance. Additionally, the smaller fifth area leads to poor current collection capability and higher resistance loss in the back contact cell 2. The excessively large area of ​​the insulation gap 122 on the outside of the finger-shaped conductive structure 121 also results in excessive waste material removal and higher costs. In this application, the ratio of the first area to the fifth area is 0.02 to 0.24, resulting in stronger current collection capability and lower resistance loss in the back contact cell. This also leads to higher light area utilization, higher power generation efficiency, lower manufacturing costs, a relatively simple manufacturing process, higher yield, lower short-circuit risk, lower probability of waste wire breakage, and higher waste removal efficiency.

[0131] For example, the ratio of the first area to the fifth area can be 0.02, 0.05, 0.08, 0.1, 0.13, 0.15, 0.18, 0.2, 0.22, or 0.24.

[0132] In some embodiments, in the second direction, the finger-like conductive structure 121 includes opposing head regions and tail regions, and an intermediate region connecting the head regions and tail regions; the area of ​​the head region is less than or equal to the area of ​​the tail region. The head region, tail region, and intermediate region are as described above. In the same finger-like conductive structure 121, current typically flows from the head region 1211 to the tail region 1212; in other words, in the same finger-like conductive structure 121, the current flowing through the tail region 1212 is larger, and the area of ​​the tail region 1212 is larger to match the larger current it transmits, resulting in high current transmission efficiency.

[0133] In some embodiments, the area of ​​the head region is a sixth area, and the area of ​​the insulating gap outside the head region is a seventh area; the ratio of the seventh area to the sixth area is a third ratio; the area of ​​the middle region is an eighth area, and the area of ​​the insulating gap outside the middle region is a ninth area; the ratio of the ninth area to the eighth area is a fourth ratio; the third ratio is greater than the fourth ratio. This means that, for a finger-shaped conductive structure 121, the insulation gap allocated per unit area of ​​the head region 1211 is larger. Specifically, for a finger-shaped conductive structure 121, the head region 1211 has many bends or inflection points. During the waste wire removal process, the stress is greater or stress concentration is more likely to occur at these locations, and the waste wire is usually easy to tear. However, the middle region is relatively straight, and the waste wire is usually not easy to tear. Therefore, for a finger-shaped conductive structure 121, the insulation gap allocated per unit area of ​​the head region 1211 is larger. During the waste removal process, it is not easy to tear at the head region 1211 and the tail region 1212 where there are many bends or inflection points. The waste removal continuity is higher, and the waste removal efficiency is higher. Moreover, the insulation gap allocated per unit area of ​​the middle region is smaller, and the size of the retained finger-shaped conductive structure is larger, which can also reduce resistance loss.

[0134] In some embodiments, the third ratio is 0.05 to 0.5. If the third ratio is less than 0.05, the insulation gaps distributed per unit area of ​​the head region 1211 are small, and the waste wires are usually easy to tear at these locations during the waste wire removal process. If the third ratio is greater than 0.5, the insulation gaps distributed per unit area of ​​the head region 1211 are too large, and too much waste wire is removed, which will lead to material waste and high resistance. Therefore, in this application, the third ratio is 0.05 to 0.5, so that the waste wires are not easy to tear at these locations during the waste wire removal process, the waste removal efficiency is high, and there is basically no material waste, and the resistance is low.

[0135] For example, the third ratio can be 0.05, 0.08, 0.1, 0.15, 0.19, 0.2, 0.25, 0.3, 0.35, 0.4, 0.45, or 0.5.

[0136] In some embodiments, the fourth ratio is 0.036 to 0.36. If the fourth ratio is less than 0.036, the insulation gaps distributed per unit area in the middle region are small, and the waste wires are usually easy to tear at these locations during the waste wire removal process. If the fourth ratio is greater than 0.36, the insulation gaps distributed per unit area in the middle region are too large, resulting in excessive waste wire removal, which leads to material waste and higher resistance. Therefore, in this application, the fourth ratio is 0.036 to 0.36, so that the waste wires are not easy to tear at these locations during the waste wire removal process, resulting in high waste removal efficiency and virtually no material waste, and lower resistance.

[0137] For example, the third ratio can be 0.036, 0.04, 0.05, 0.09, 0.1, 0.15, 0.19, 0.2, 0.25, 0.3, 0.35, or 0.36.

[0138] This application also provides a photovoltaic system, which may include a plurality of any of the aforementioned photovoltaic modules, wherein the photovoltaic modules may be arranged in an array. For example, the photovoltaic system may be installed on a building roof, or may exist directly as a building roof, etc., and the specific form of the photovoltaic system is not limited. This photovoltaic system has the same or similar beneficial effects as any of the aforementioned photovoltaic modules, and related aspects can be referred to each other. To avoid repetition, further details are omitted here.

[0139] In this document, the terms "comprising," "including," or any other variations thereof are intended to cover non-exclusive inclusion, such that a process, method, article, or apparatus that comprises a list of elements includes not only those elements but also other elements not expressly listed, or elements inherent to such a process, method, article, or apparatus. Without further limitation, an element defined by the phrase "comprising one..." does not exclude the presence of other identical elements in the process, method, article, or apparatus that includes that element. The present application has been described above in conjunction with the accompanying drawings; however, the present application is not limited to the specific embodiments described above. The specific embodiments described above are merely illustrative and not restrictive. Those skilled in the art, guided by the teachings of this application, can make many modifications without departing from the spirit and scope of the claims, and all such modifications are within the protection scope of this application.

Claims

1. A photovoltaic module, wherein, include: A conductive backsheet, and a back contact cell disposed on the conductive backsheet; The back contact cell includes: a plurality of current collector grid lines extending along a first direction; The conductive backsheet includes: a conductive layer, and an insulating layer located between the conductive layer and the back contact cell; the conductive layer includes: a plurality of finger-shaped conductive structures extending along a second direction, and an insulating gap located between adjacent finger-shaped conductive structures; the first direction is different from the second direction; a through hole is provided in the insulating layer, and a portion of the finger-shaped conductive structure at the through hole is electrically connected to the current collector grid line at the corresponding position; In the conductive layer, within the region corresponding to one of the back contact cells, the number of the finger-shaped conductive structures is a first number; The ratio of the width of the insulation gap to the first quantity is 18 to 125; the width is measured in micrometers.

2. The photovoltaic module of claim 1, wherein, In the conductive layer, within the region corresponding to one of the back contact cells, the length of the insulating gap is a first length; The ratio of the first length to the width of the insulation gap is between 1200 and 9000.

3. The photovoltaic module according to claim 1, wherein, The ratio of the length of the finger-shaped conductive structure to the width of the insulating gap is 60 to 450. The length of the finger-shaped conductive structure is parallel to the second direction.

4. The photovoltaic module of claim 1, wherein, In the second direction, the finger-shaped conductive structure includes opposing head and tail regions, and an intermediate region connecting the head and tail regions; the intermediate region contains the center of the finger-shaped conductive structure; the width of the head region is less than or equal to the width of the tail region.

5. The photovoltaic module of claim 4, wherein, For a given finger-shaped conductive structure: the width of the insulating gap at the head region and the width of the insulating gap at the tail region are both greater than or equal to the width of the insulating gap at the middle region.

6. The photovoltaic module according to claim 4, wherein, The width of the finger-shaped conductive structure at the center of the head region is the first width; the width of the finger-shaped conductive structure at its center is the second width. For a given finger-shaped conductive structure: the width of the insulating gap at the center of the head region is in a first ratio to the first width, and the width of the insulating gap at the center of the finger-shaped conductive structure is in a second ratio to the second width; The first ratio is greater than or equal to the second ratio.

7. The photovoltaic module according to claim 6, wherein, The first ratio is 6 to 44; The second ratio is 8 to 55.

8. The photovoltaic module according to claim 4, wherein, For one of the finger-shaped conductive structures: the ratio of the width of the insulating gap at the center of the head region to the width of the insulating gap at the center of the finger-shaped conductive structure is 1 to 3.

9. The photovoltaic module according to claim 4, wherein, In the same finger-shaped conductive structure: the width at the center of the tail region is the third width, and the width at the center of the head region is the first width; the ratio of the third width to the first width is 2.5 to 5.

10. The photovoltaic module according to claim 4, wherein, The head region includes an endpoint remote from the tail region; The endpoint of the finger-shaped conductive structure and its projection on the conductive layer are located within the finger-shaped conductive structure, and the distance between the via adjacent to the endpoint and the via is 0.3 mm to 1 mm.

11. The photovoltaic module according to any one of claims 1 to 10, wherein, The width of the insulation gap is from 500 μm to 1500 μm, and the first number ranges from 12 to 28.

12. The photovoltaic module according to claim 11, wherein, The width of the insulation gap is 600 μm to 1200 μm, and the first number ranges from 16 to 24.

13. The photovoltaic module according to any one of claims 1 to 10, wherein, The length of the back contact battery cell in the first direction is 160 mm to 220 mm; The width of the back contact cell is less than or equal to its length.

14. The photovoltaic module according to any one of claims 1 to 10, wherein, In the conductive layer, within the region corresponding to one of the back contact cells, the length of the insulating gap is a first length; The ratio of the length of the back contact battery cell in the first direction to the first length is 0.09 to 0.12; The ratio of the width of the back contact cell to the width of the insulation gap is 65 to 485; the direction in which the width of the back contact cell is located is perpendicular to the first direction.

15. The photovoltaic module according to any one of claims 1 to 10, wherein, Also includes: An alloy layer is located between the finger-shaped conductive structure and the collector grid line electrically connected to the finger-shaped conductive structure.

16. A photovoltaic module, wherein, include: A conductive backsheet, and a back contact cell disposed on the conductive backsheet; The back contact cell includes: a plurality of current collector grid lines extending along a first direction; The conductive backsheet includes: a conductive layer, and an insulating layer located between the conductive layer and the back contact cell; the conductive layer includes: a plurality of finger-shaped conductive structures extending along a second direction, and an insulating gap located between adjacent finger-shaped conductive structures; the first direction is different from the second direction; a through hole is formed in the insulating layer, and a portion of the finger-shaped conductive structure at the through hole is electrically connected to the current collector grid line corresponding to the position; In the conductive layer, within the region corresponding to one of the back contact cells, the area of ​​all the insulating gaps is the first area; The area of ​​the region in the conductive layer corresponding to one of the back contact cells is the second area; The first area accounts for 1% to 40% of the second area.

17. The photovoltaic module according to claim 16, wherein, The area of ​​one of the aforementioned finger-shaped conductive structures is the third area; The area of ​​the insulating gap on the outside of the finger-shaped conductive structure is the fourth area; The ratio of the third area to the fourth area is 3.4 to 4.

5.

18. The photovoltaic module according to claim 16, wherein, In the conductive layer, within the region corresponding to one of the back contact cells, the total area of ​​all the finger-shaped conductive structures is the fifth area; The ratio of the first area to the fifth area is between 0.02 and 0.

24.

19. The photovoltaic module according to claim 16, wherein, In the second direction, the finger-shaped conductive structure includes opposing head regions and tail regions, and an intermediate region connecting the head regions and tail regions; the area of ​​the head region is less than or equal to the area of ​​the tail region.

20. The photovoltaic module according to claim 19, wherein, The area of ​​the head region is the sixth area; the area of ​​the insulating gap outside the head region is the seventh area; The ratio of the seventh area to the sixth area is the third ratio; The area of ​​the intermediate region is the eighth area; the area of ​​the insulating gap outside the intermediate region is the ninth area; The ratio of the ninth area to the eighth area is the fourth ratio; The third ratio is greater than the fourth ratio.

21. The photovoltaic module according to claim 20, wherein, The third ratio is 0.05 to 0.5; the fourth ratio is 0.036 to 0.

36.

22. The photovoltaic module according to any one of claims 16 to 21, wherein, The first area is 360mm² 2 Up to 2700mm 2 .

23. A photovoltaic system, wherein, include: The photovoltaic module according to any one of claims 1 to 22.

Images