Solar cell module and preparation method therefor

Abstract

The present disclosure provides a solar cell module and a preparation method therefor. The solar cell module comprises: a plurality of cells arranged along a first direction, each cell comprising a first electrode, a first photoelectric conversion layer, a third functional layer, and a second electrode sequentially arranged along a second direction; and a conductive connection structure disposed between a first cell and a second cell adjacent to each other among the plurality of cells, the conductive connection structure being configured to connect the first electrode of the first cell and the second electrode of the second cell. A first functional layer and a second functional layer are provided between the conductive connection structure and the first photoelectric conversion layer, and the second functional layer is disposed between the conductive connection structure and the first functional layer. The first functional layer comprises a semiconductor material and / or an insulating material, a sheet resistance of the second functional layer is less than or equal to 80 Ω / □, and the third functional layer comprises an n-type semiconductor material.

Description

Solar cell modules and their preparation methods

[0001] Cross-references to related applications

[0002] This disclosure is based on and claims priority to Chinese Patent Application No. 202510127443.5, filed on January 27, 2025, entitled “Solar Cell Module and Method for Preparation Thereof”, the entire contents of which are incorporated herein by reference. Technical Field

[0003] This disclosure relates to the field of battery technology, and in particular to a solar cell module and its preparation method, a photovoltaic module, a power generation device, and a power consumption device. Background Technology

[0004] In recent years, with the increasingly widespread application of solar cells, they have been widely used in energy storage systems such as hydropower, thermal power, wind power, and solar power plants, as well as in various fields such as power tools, electric bicycles, electric motorcycles, electric vehicles, and aerospace. With the application and promotion of solar cells, people have increasingly higher requirements for their photoelectric conversion efficiency and stability.

[0005] Therefore, improving the photoelectric conversion efficiency and stability of solar cells has become an urgent problem to be solved. Summary of the Invention

[0006] This disclosure is made in view of the above-mentioned issues, and its purpose is to provide a solar cell module and a method for preparing the same, a photovoltaic module, a power generation device, and a power consumption device, wherein the solar cell module has improved photoelectric conversion efficiency and stability.

[0007] To achieve the above objectives, a first aspect of this disclosure provides a solar cell module, comprising: a plurality of cell units arranged along a first direction, each cell unit including a first electrode, a second electrode, and a first photoelectric conversion layer and a third functional layer arranged along a second direction, the third functional layer being disposed between the first photoelectric conversion layer and the second electrode, the first direction intersecting the second direction; a conductive connection structure disposed between adjacent first and second cell units in the plurality of cell units, the conductive connection structure being used to connect the first electrode of the first cell unit and the second electrode of the second cell unit; wherein, the conductive connection structure has a first functional layer and a second functional layer disposed between the first photoelectric conversion layer and the first functional layer along the first direction, the second functional layer being disposed between the conductive connection structure and the first functional layer; the first functional layer includes a semiconductor material and / or an insulating material; the sheet resistance of the second functional layer is less than or equal to 80 Ω / □; the third functional layer includes an n-type semiconductor material. Through the above structural configuration, this disclosure can block the migration of anions in the first photoelectric conversion layer to the conductive connection structure and the second electrode, and facilitates the transport of charge carriers and electrons, thereby improving the photoelectric conversion efficiency and stability of the solar cell device.

[0008] In some embodiments, the first functional layer extends along a second direction to the surface of the first electrode and along a first direction to at least a portion of the bottom of the second functional layer. This can further improve the stability of the solar cell module and simplify the fabrication process.

[0009] In some embodiments, the second functional layer extends along a second direction and is disposed between the conductive connection structure and the first electrode. This can further improve the stability of the solar cell module and simplify the fabrication process.

[0010] In some embodiments, the first functional layer comprises an n-type semiconductor oxide and / or an insulating oxide. This is beneficial for improving the photoelectric conversion efficiency and stability of the solar cell device.

[0011] In some embodiments, the n-type semiconductor oxide includes one or more of tin oxide, titanium oxide, zinc oxide, indium oxide, and gallium oxide; and / or, the insulating oxide includes one or more of aluminum oxide, zirconium oxide, and magnesium oxide. This is beneficial for further improving the photoelectric conversion efficiency and stability of solar cell modules.

[0012] In some implementations, the first functional layer includes tin oxide. This further improves the photoelectric conversion efficiency and stability of the solar cell module, while also reducing process complexity and operational difficulty.

[0013] In some embodiments, the density of the first functional layer is 2.5 g / cm³. 3 Up to 8g / cm3 This is beneficial for improving the photoelectric conversion efficiency and stability of solar cell modules.

[0014] In some embodiments, the density of the first functional layer is 4 g / cm³. 3 Up to 7g / cm 3 This is more conducive to improving the photoelectric conversion efficiency and stability of solar cell modules.

[0015] In some embodiments, the second functional layer comprises one or more of conductive oxides, metals, and alloys. This improves the conductivity of the solar cell, thereby enhancing its photoelectric conversion efficiency and stability.

[0016] In some embodiments, the second functional layer includes one or more of indium tin oxide, fluorine-doped tin oxide, indium-doped zinc oxide, aluminum-doped zinc oxide, boron-doped zinc oxide, antimony-doped tin oxide, and indium-doped tungsten oxide. This is more conducive to improving the photoelectric conversion efficiency and stability of the solar cell.

[0017] In some embodiments, the thickness of the first functional layer along the first direction is 10 nm to 100 nm, and / or the thickness of the second functional layer along the first direction is 10 nm to 80 nm. This is more conducive to improving the photoelectric conversion efficiency and stability of the solar cell.

[0018] In some embodiments, the third functional layer satisfies one or more of the following conditions: (1) the thickness of the third functional layer along the second direction is 10 nm to 100 nm; (2) the density of the third functional layer is 3 g / cm³. 3 Up to 8g / cm 3 Optionally, 4g / cm 3 Up to 7g / cm 3 (3) The third functional layer and the first functional layer are integrally formed; (4) The third functional layer includes one or more of tin oxide, titanium oxide, zinc oxide, indium oxide, and gallium oxide. This is more conducive to improving the photoelectric conversion efficiency and stability of solar cells.

[0019] In some embodiments, the battery cell further includes a fourth functional layer located between the third functional layer and the second electrode; the sheet resistance of the fourth functional layer is less than or equal to 80 Ω / □. This further improves the conductivity of the solar cell module while reducing the thickness of the metal electrode, thereby further improving the photoelectric conversion efficiency and stability of the solar cell module.

[0020] In some embodiments, the fourth functional layer satisfies one or more of the following conditions: (1) the fourth functional layer comprises one or more of conductive oxides, metals, and alloys; (2) the thickness of the fourth functional layer along the second direction is 10 nm to 80 nm; and (3) the fourth functional layer and the second functional layer are integrally formed. This further improves the conductivity of the solar cell module while reducing the thickness of the metal electrode, thereby further improving the photoelectric conversion efficiency and stability of the solar cell module.

[0021] In some embodiments, the thickness of the first electrode is 10 nm to 800 nm, and / or the thickness of the second electrode is 10 nm to 150 nm. This is beneficial for improving the light absorption rate of the solar cell module while reducing sheet resistance, and also reduces the risk of crater warping of the second electrode during the scribing process. This is beneficial for subsequent encapsulation processes and for improving the photoelectric conversion efficiency and stability of the solar cell.

[0022] In some embodiments, the solar cell module further includes a first isolation structure; the first isolation structure is disposed between the first electrodes of adjacent first and second cell cells in a plurality of cell units. This helps to improve the stability of the solar cell.

[0023] In some embodiments, the distance between the first isolation structure and the conductive connection structure along the first direction is 20 μm to 50 μm. This helps to reduce the difficulty of the manufacturing process and also helps to reduce material waste.

[0024] In some embodiments, the solar cell module further includes a second isolation structure; the second isolation structure is disposed between the second electrodes of adjacent first and second cell cells in a plurality of cell units. This is beneficial for improving the stability of the solar cell.

[0025] In some embodiments, the distance between the second isolation structure and the conductive connection structure along the first direction is 10 μm to 40 μm. This helps to reduce the difficulty of fabrication and also helps to reduce material waste.

[0026] In some embodiments, the second electrode and the conductive connection structure are integrally formed. This helps to reduce the difficulty of fabrication and also reduces material waste.

[0027] In some embodiments, the battery cell further includes: a first hole transport layer and / or a first electron transport layer; the first hole transport layer is disposed between the first electrode and the first photoelectric conversion layer, and the first electron transport layer is disposed between the first photoelectric conversion layer and the third functional layer. This facilitates the extraction and transport of electrons / holes, thereby improving the photoelectric conversion efficiency of the solar cell module.

[0028] In some embodiments, the battery cell further includes a second photoelectric conversion layer located between the first electron transport layer and the third functional layer, the band gap of which differs from that of the first photoelectric conversion layer. This is beneficial for improving the efficiency of the solar cell module.

[0029] In some embodiments, a first functional layer and a second functional layer are disposed between the conductive connection structure and the second photoelectric conversion layer, with the second functional layer positioned between the conductive connection structure and the first functional layer. This is beneficial for improving the stability and photoelectric conversion efficiency of the solar cell module.

[0030] In some embodiments, the battery cell further includes a connecting layer, a second hole transport layer, a second photoelectric conversion layer, and a second electron transport layer, which are sequentially arranged between the first electron transport layer and the third functional layer along a second direction. This is beneficial for improving the stability and photoelectric conversion efficiency of the solar cell module.

[0031] In some implementations, the band gap of the first photoelectric conversion layer is larger than that of the second photoelectric conversion layer. This is beneficial for improving the stability and photoelectric conversion efficiency of the solar cell module.

[0032] In some embodiments, the first photoelectric conversion layer includes a perovskite light-absorbing layer; and / or, the second photoelectric conversion layer includes a perovskite light-absorbing layer.

[0033] In some embodiments, the perovskite light-absorbing layer includes at least one of the compounds shown in [A][B][X]3 and [A]2[C][D][X]6, wherein A includes a monovalent inorganic or organic cation, B includes a divalent inorganic cation, C includes a monovalent inorganic cation, D includes a trivalent inorganic cation, and X includes a monovalent anion.

[0034] In some embodiments, A includes CH3NH3 + CH(NH2)2 + Li + Na + K + 、Rb + Cs + One or more of the following; B includes Pb 2+ and / or Sn 2+ C includes Li + Na + K + 、Rb + Cs + One or more; X includes F - Cl - ,Br - I - SCN- CNO - OCN - OSCN - SH - OH - CN - SeCN - One or more of these. This is beneficial for improving the stability and photoelectric conversion efficiency of solar cell modules.

[0035] In some embodiments, the battery cell further includes a fifth functional layer located between the first photoelectric conversion layer and the connecting layer; and / or, the battery cell further includes a sixth functional layer located between the first photoelectric conversion layer and the connecting layer, wherein, in the case of including the fifth functional layer, the sixth functional layer is located between the fifth functional layer and the connecting layer. This is beneficial for improving the stability and photoelectric conversion efficiency of the solar cell module.

[0036] In some embodiments, the fifth functional layer comprises an n-type semiconductor material; and / or, the sixth functional layer comprises one or more of a conductive oxide, a metal, or an alloy.

[0037] This disclosure provides a second aspect of a method for fabricating a solar cell module, comprising forming a plurality of cell units arranged along a first direction and forming a conductive connection structure. Each cell unit includes a first electrode, a second electrode, and a first photoelectric conversion layer and a third functional layer located between the first and second electrodes, arranged along a second direction. The third functional layer is disposed between the first photoelectric conversion layer and the second electrode, and the first direction intersects the second direction. The conductive connection structure is disposed between adjacent first and second cell units in the plurality of cell units, and is used to connect the first electrode of the first cell unit and the second electrode of the second cell unit. A first functional layer and a second functional layer are disposed between the conductive connection structure and the first photoelectric conversion layer, and the second functional layer is disposed between the conductive connection structure and the first functional layer. The first functional layer includes a semiconductor material and / or an insulating material; the sheet resistance of the second functional layer is less than or equal to 80 Ω / □; the third functional layer includes an n-type semiconductor material. This method enables the formation of a solar cell module with good photoelectric conversion efficiency and stability.

[0038] In some embodiments, forming a plurality of battery cells arranged along a first direction and forming a conductive connection structure includes the following steps: providing a plurality of first electrodes arranged sequentially along the first direction, with a first isolation structure disposed between adjacent first electrodes; forming a plurality of first photoelectric conversion layers spaced apart along the first direction on the first electrodes and the first isolation structure; exposing the first electrodes through an isolation channel P2 between adjacent first photoelectric conversion layers; forming a first functional layer on the surface of the first photoelectric conversion layer facing the isolation channel P2 and on a portion of the first electrodes facing the surface of the isolation channel P2 in the isolation channel P2, and forming a third functional layer on the surface of the first photoelectric conversion layer facing the second electrode; forming a second functional layer on the surface of the first functional layer in the isolation channel P2 away from the first photoelectric conversion layer and on the surface of the first electrode; forming a plurality of conductive structures spaced apart along the first direction on the surface of the third functional layer away from the first photoelectric conversion layer and within the isolation channel P2; wherein the conductive structures located within the isolation channel P2 constitute a conductive connection structure, and the conductive structures located on the surface of the third functional layer away from the first photoelectric conversion layer constitute a second electrode; adjacent conductive structures are isolated by a second isolation structure. This simplifies the fabrication process and improves the stability and photoelectric conversion efficiency of the resulting solar cell modules.

[0039] In some embodiments, a first functional layer is formed on the surface of the first photoelectric conversion layer facing the isolation channel P2 and on a portion of the surface of the first electrode facing the isolation channel P2. This includes: forming a first initial functional layer on the inner wall of the isolation channel P2; removing a portion of the first initial functional layer in the middle of the surface of the first electrode facing the isolation channel P2 to form the first functional layer located on the surface of the first photoelectric conversion layer facing the isolation channel P2 and on a portion of the surface of the first electrode facing the isolation channel P2. This simplifies the fabrication process and improves the stability and photoelectric conversion efficiency of the resulting solar cell module.

[0040] In some embodiments, the first initial functional layer is formed by atomic layer deposition, and / or the second functional layer is formed by physical vapor deposition, and / or the third functional layer is formed by atomic layer deposition. This is beneficial for further improving the stability and photoelectric conversion efficiency of the prepared solar cell module.

[0041] A third aspect of this disclosure provides a photovoltaic module, including the solar cell module of the first aspect described above, or including a solar cell module prepared according to the preparation method of the second aspect described above.

[0042] The fourth aspect of this disclosure provides a power generation device, including the solar cell module of the first aspect described above, or including a solar cell module prepared according to the preparation method of the second aspect described above.

[0043] The fifth aspect of this disclosure provides an electrical device that includes a solar cell module as described in the first aspect, or a solar cell module prepared according to the preparation method of the second aspect. Attached Figure Description

[0044] Figure 1 is a schematic diagram of the structure of a solar cell module according to an embodiment of the present disclosure;

[0045] Figure 2 is a schematic diagram of the structure of a solar cell module according to one embodiment of the present disclosure;

[0046] Figure 3 is a schematic diagram of the structure of a solar cell module according to an embodiment of this disclosure;

[0047] Figure 4 is a schematic diagram of the structure of a solar cell module according to an embodiment of the present disclosure;

[0048] Figure 5 is a schematic diagram of the structure of a solar cell module according to an embodiment of this disclosure;

[0049] Figure 6 is a schematic diagram of the structure during the fabrication process of a solar cell module according to an embodiment of this disclosure;

[0050] Figure 7 is a schematic diagram of the structure during the fabrication process of a solar cell module according to an embodiment of this disclosure;

[0051] Figure 8 is a schematic diagram of the structure during the fabrication process of a solar cell module according to an embodiment of this disclosure;

[0052] Figure 9 is a schematic diagram of the structure during the fabrication process of a solar cell module according to an embodiment of this disclosure;

[0053] Figure 10 is a schematic diagram of the structure during the fabrication process of a solar cell module according to an embodiment of this disclosure;

[0054] Figure 11 is a schematic diagram of the structure during the fabrication process of a solar cell module according to an embodiment of this disclosure;

[0055] Figure 12 is a schematic diagram of the structure during the fabrication process of a solar cell module according to an embodiment of this disclosure.

[0056] Explanation of reference numerals in the attached figures: 200 Solar cell module; 20 Cell unit; 10 First electrode; 50 Second electrode; 70 Conductive connection structure; 201 First photoelectric conversion layer; 202 First hole transport layer; 203 First electron transport layer; 301 First functional layer; 302 Second functional layer; 303 Third functional layer; 304 Fourth functional layer; 401 First isolation structure; 402 Second isolation structure; 204 Second photoelectric conversion layer; 205 Second hole transport layer; 206 Second electron transport layer; 80 Connection layer; P2 Isolation channel; 50a Initial conductive structure; 50b Conductive structure; 301a First initial functional layer; 60 Substrate. Detailed Implementation

[0057] The following detailed description, with appropriate reference to the accompanying drawings, discloses embodiments of the solar cell module, its fabrication method, photovoltaic module, power generation device, and power consumption device of this disclosure. However, unnecessary detailed descriptions may be omitted. For example, detailed descriptions of well-known matters and repetitive descriptions of practically identical structures may be omitted. This is to avoid unnecessarily lengthy descriptions and to facilitate understanding by those skilled in the art. Furthermore, the accompanying drawings and the following description are provided to enable those skilled in the art to fully understand this disclosure and are not intended to limit the subject matter of the claims.

[0058] The "range" disclosed in this disclosure is defined by a lower limit and an upper limit, whereby a given range is defined by selecting a lower limit and an upper limit, which define the boundaries of the particular range. Ranges defined in this way can include or exclude endpoints and can be arbitrarily combined; that is, any lower limit can be combined with any upper limit to form a range. For example, if ranges of 60-120 and 80-110 are listed for a specific parameter, it is expected that ranges of 60-110 and 80-120 are also expected. Furthermore, if minimum range values ​​1 and 2 are listed, and if maximum range values ​​3, 4, and 5 are listed, then the following ranges are all expected: 1-3, 1-4, 1-5, 2-3, 2-4, and 2-5. In this disclosure, unless otherwise stated, the numerical range "ab" represents a shortened representation of any combination of real numbers between a and b, where a and b are real numbers. For example, the numerical range "0-5" indicates that all real numbers between "0-5" have been listed in this article; "0-5" is simply a shortened representation of these numerical combinations. Furthermore, when a parameter is stated as an integer ≥2, it is equivalent to disclosing that the parameter is, for example, an integer such as 2, 3, 4, 5, 6, 7, 8, 9, 10, 11, 12, etc.

[0059] Unless otherwise specified, all embodiments and optional embodiments of this disclosure can be combined to form new technical solutions.

[0060] Unless otherwise specified, all technical features and optional technical features of this disclosure can be combined to form new technical solutions.

[0061] Unless otherwise specified, all steps of this disclosure may be performed sequentially or randomly, preferably sequentially. For example, if a method includes steps (a) and (b), it means that the method may include steps (a) and (b) performed sequentially, or it may include steps (b) and (a) performed sequentially. For example, if it is mentioned that the method may also include step (c), it means that step (c) may be added to the method in any order. For example, the method may include steps (a), (b), and (c), or it may include steps (a), (c), and (b), or it may include steps (c), (a), and (b), etc.

[0062] Unless otherwise specified, the terminology used in this disclosure has the common meaning as commonly understood by those skilled in the art.

[0063] Unless otherwise specified, the values ​​of the parameters mentioned in this disclosure can be determined using various test methods commonly used in the art, for example, according to the test methods given in this disclosure.

[0064] With the increasing severity of global energy shortages and environmental pollution, solar cells, as an ideal renewable energy technology, are receiving unprecedented attention. Solar cells, also known as photovoltaic cells, operate based on the photoelectric effect or photochemical effect, directly and efficiently converting light energy into electrical energy. Among the many types of solar cells, perovskite solar cells, with their unique advantages, have become one of the most promising areas for research and development. However, the perovskite light-absorbing layer in current perovskite solar cells is unstable. Anions (such as halide ions) in the perovskite light-absorbing layer easily migrate under the influence of the built-in electric field and the photogenerated electric field, and react rapidly with the metal electrode, leading to a decrease in the conductivity of the metal electrode. Furthermore, the structure of the perovskite light-absorbing layer may collapse, thus affecting the photoelectric conversion efficiency and stability of the perovskite solar cell.

[0065] In related technologies, the reaction with anions in the perovskite light-absorbing layer is avoided by replacing the metal electrode with a transparent oxide electrode or a carbon electrode, but this cannot significantly improve the photoelectric conversion efficiency and stability of perovskite solar cells.

[0066] Based on this, this disclosure proposes a solar cell module and its fabrication method, a photovoltaic module, a power generation device, and a power consumption device. The solar cell in this disclosure has improved photoelectric conversion efficiency and stability. The following provides a more detailed description of this disclosure and its optional embodiments.

[0067] Solar cell modules

[0068] A first aspect of this disclosure provides a solar cell module. Figures 1 to 5 are schematic diagrams of the structure of a solar cell module according to an embodiment of this disclosure. As shown in Figures 1 to 5, the solar cell module 200 includes: a plurality of battery cells 20 arranged along a first direction; each battery cell 20 includes a first electrode 10, a second electrode 50 arranged along a second direction, and a first photoelectric conversion layer 201 and a third functional layer 303 located between the first electrode 10 and the second electrode 50; the third functional layer 303 is disposed between the first photoelectric conversion layer 201 and the second electrode 50; the first direction intersects the second direction; and the battery cells 200 are arranged along a second direction. A conductive connection structure 70 is provided between adjacent first and second battery cells in the cell unit 20. The conductive connection structure 70 is used to connect the first electrode 10 of the first battery cell and the second electrode 50 of the second battery cell. A first functional layer 301 and a second functional layer 302 are disposed between the conductive connection structure 70 and the first photoelectric conversion layer 201 along a first direction. The second functional layer 302 is disposed between the conductive connection structure 70 and the first functional layer 301. The first functional layer includes semiconductor material and / or insulating material. The sheet resistance of the second functional layer is less than or equal to 80 Ω / □. The third functional layer includes n-type semiconductor material.

[0069] The solar cell module disclosed herein includes multiple cell cells arranged along a first direction and a conductive connection structure. Each cell cell includes a first electrode, a second electrode, and a first photoelectric conversion layer located between the first and second electrodes, arranged along a second direction. Thus, the cell cell can output power through the first and second electrodes and absorb sunlight through the first photoelectric conversion layer. A third functional layer located between the first photoelectric conversion layer and the second electrode serves as a physical barrier, preventing the migration of anions and holes from the first photoelectric conversion layer 201 to the second electrode 50. Furthermore, because it includes an n-type semiconductor material, which facilitates electron transport and blocks hole transport, the presence of the third functional layer improves the stability of the solar cell module. The conductive connection structure connects the first electrode of adjacent first cell cells and the second electrode of adjacent second cell cells, thereby enabling electrical connection between adjacent first and second cell cells. The first and second functional layers are disposed between the conductive connection structure and the first photoelectric conversion layer. Since the first functional layer comprises semiconductor materials and / or insulating materials, which are relatively stable and do not readily react with anions in the first photoelectric conversion layer, nor affect carrier transport, the first functional layer can act as a physical barrier to prevent the migration of anions from the first photoelectric conversion layer to the conductive connection structure, thereby improving the photoelectric conversion efficiency and stability of the solar cell device. Furthermore, the second functional layer has a low sheet resistance, indicating good electronic conductivity. Therefore, placing a second functional layer between the first functional layer and the conductive connection structure can further improve the conductivity of the solar cell module, further enhancing its photoelectric conversion efficiency and stability.

[0070] In this disclosure, semiconductor materials are materials whose conductivity is between that of conductors and insulators, and typically include n-type semiconductor materials and p-type semiconductor materials.

[0071] n-type semiconductor materials, also known as electron-type semiconductor materials, are impurity semiconductor materials where the concentration of free electrons is much greater than the concentration of holes. p-type semiconductor materials, also known as hole-type semiconductor materials, are impurity semiconductor materials where the concentration of holes is much greater than the concentration of free electrons.

[0072] In some embodiments, the first functional layer 301 includes one or more of n-type semiconductor materials and p-type semiconductor materials. The n-type semiconductor material may be, for example, one or more of n-type semiconductor oxides and n-type semiconductor sulfides. For example, the n-type semiconductor oxide may include one or more of tin oxide, titanium oxide, zinc oxide, indium oxide, and gallium oxide; the n-type semiconductor sulfide may include one or more of zinc sulfide, indium sulfide, chromium sulfide, and copper defect n-type sulfides. The p-type semiconductor material may be, for example, one or more of p-type semiconductor oxides and p-type semiconductor sulfides; for example, the p-type semiconductor oxide may include one or more of cuprous oxide, lead oxide, and nickel oxide; the p-type semiconductor sulfide may include copper sulfide.

[0073] In this disclosure, insulating material, also known as dielectric, refers to a substance that is non-conductive or has extremely low conductivity under DC voltage, and its resistivity is generally greater than 10. -10 Ω·m. The insulating material included in the second functional layer 302 may include one or more of insulating oxides, insulating sulfides, and organic polymers. Exemplarily, the insulating oxide may include one or more of aluminum oxide, zirconium oxide, and magnesium oxide; the insulating sulfide may include one or more of iron sulfide, manganese sulfide, and rare earth sulfides; and the organic polymer may include one or more of polyethylene, polytetrafluoroethylene, and polyimide.

[0074] In this disclosure, the materials of the first, second, and third functional layers can be tested using energy-dispersive X-ray spectroscopy (EDS) combined with X-ray photoelectron spectroscopy (XPS). Specifically, the elemental types of the first, second, and third functional layers can be determined by energy-dispersive X-ray spectroscopy, and then the valence states and chemical bonds of the elements in the first, second, and third functional layers can be determined by X-ray photoelectron spectroscopy, thereby enabling the testing of the specific materials of the first, second, and third functional layers.

[0075] In this disclosure, the term "sheet resistance" has a meaning known in the art and can be measured using instruments or methods known in the art. Exemplarily, the sheet resistance of the second functional layer can be tested using the four-probe method, specifically as follows: An RTS-9 dual-current four-probe tester is used. The test environment is: ambient temperature 23±2℃, 0.1MPa, and relative humidity ≤65%. During testing, the sample to be tested is cleaned, then placed horizontally on the test stage. The four probes are lowered to ensure good contact between the probes and the sample surface. The automatic test mode is then adjusted to calibrate the current range of the sample. The sheet resistance is measured under a suitable current range, and 8 to 10 data points from the same sample are collected for data measurement accuracy and error analysis. Finally, the average value is recorded as the sheet resistance value of the sample.

[0076] For example, the sheet resistance of the second functional layer 302 is a value between 1Ω / □, 10Ω / □, 20Ω / □, 40Ω / □, 60Ω / □, 80Ω / □, or any two of these values.

[0077] In this disclosure, the intersection of the first direction and the second direction means that the angle between the lines containing the first direction and the second direction is greater than 0° and less than or equal to 90°, and can be 10°, 50°, 80°, 90°, or a value within a range of any two of the above values. It is understood that the first direction and the second direction here refer to the extension direction of the cell unit 20 of a regular-shaped (e.g., rectangular) solar cell and the thickness direction of the solar cell. For irregularly shaped cells (e.g., fan-shaped or irregularly shaped), the first direction refers to the direction in which two adjacent cell units 20 are arranged. Furthermore, for flexible cells, the first direction refers to the direction in which two adjacent cell units 20 are arranged when the flexible cell is laid flat.

[0078] In some implementations, the second direction can be the direction of light transmission, and the first and second directions can be perpendicular to each other. Referring to Figures 1 to 5, the first direction can be, for example, the X-axis direction in Figures 1 to 5, and the second direction can be, for example, the Y-axis direction in Figures 1 to 5.

[0079] In some embodiments, the conductive connection structure 70 has two opposing surfaces along the first direction. The first functional layer 301 can be disposed on one or both sides of the conductive connection structure 70 along the first direction, and the second functional layer 302 can also be disposed on one or both sides of the conductive connection structure 70 along the first direction. For example, the first functional layer 301 and the second functional layer 302 can be disposed on opposite sides of the conductive connection structure 70 along the first direction, or they can be disposed on the same side of the conductive connection structure 70 along the first direction, or they can be disposed on one side of the conductive connection structure 70 along the first direction, with the first functional layer 301 disposed on the other side. It should be noted that the placement of the first functional layer 301 and the second functional layer 302 on one or both sides of the conductive connection structure 70 along the first direction can be determined according to the specific structure of the solar cell module 200 and actual needs, for example, according to the specific structure of the conductive connection structure 70 or the spacing between the conductive connection structure 70 and other structures. Optionally, the first functional layer 301 and the second functional layer 302 are respectively disposed on both sides of the conductive connection structure 70 along the first direction. In this way, the conductive connection structure as a whole can be protected from contact with the first photoelectric conversion layer 201, thereby improving the stability of the solar cell module 200 and further simplifying the manufacturing process.

[0080] In some embodiments, the first electrode 10 refers to the electrode that first receives incident light and is used to collect electrons / holes; the second electrode 50 refers to the electrode that last receives incident light and is used to collect holes / electrons.

[0081] In some embodiments, the first electrode 10 is a transparent electrode, which may include a transparent conductive material. This disclosure does not impose any particular limitation on the transparent conductive material. Exemplarily, the transparent conductive material includes one or more of the following: tin oxide, indium tin oxide (ITO), fluorine-doped tin oxide (FTO), indium-doped zinc oxide (IZO), aluminum-doped zinc oxide (AZO), boron-doped zinc oxide (BZO), antimony-doped tin oxide, indium-doped tungsten oxide (IWO), indium-doped chromium oxide (ICrO), indium-doped titanium oxide (ITiO), lanthanide-doped indium oxide, graphene, etc.

[0082] In some embodiments, the thickness of the first electrode 10 is from 10 nm to 800 nm, optionally from 400 nm to 600 nm. This is beneficial for improving the light absorption rate of the solar cell module while reducing its sheet resistance. Exemplarily, the thickness of the first electrode is a value between 10 nm, 50 nm, 100 nm, 200 nm, 400 nm, 500 nm, 600 nm, 700 nm, 800 nm, or any two of these values.

[0083] In some embodiments, the electrode material of the second electrode 50 includes one or more of metals and their alloys, transparent conductive oxides, elemental carbon materials, and organic conductive materials. Exemplarily, the metals and their alloys include one or more of gold, silver, copper, aluminum, nickel, chromium, bismuth, platinum, magnesium, molybdenum, and tungsten, and alloys of any two or more thereof; the transparent conductive oxides include indium tin oxide (ITO), fluorine-doped tin oxide (FTO), antimony-doped tin oxide, indium-doped zinc oxide (IZO), aluminum-doped zinc oxide (AZO), boron-doped zinc oxide (BZO), antimony-doped tin oxide, indium-doped tungsten oxide (IWO), indium-doped chromium oxide (ICrO), indium-doped titanium oxide (ITiO), etc.; the elemental carbon materials include one or more of graphite, graphene, and carbon nanotubes; and the organic conductive materials include one or more of poly(3,4-ethylenedioxythiophene), polythiophene, and polyacetylene.

[0084] In some embodiments, the thickness of the second electrode 50 is from 10 nm to 150 nm, optionally from 15 nm to 50 nm, and more preferably from 15 nm to 30 nm. A thickness within this range allows for better conductivity while reducing the risk of crater warping during the scribing process, which is beneficial for subsequent encapsulation and improves the photoelectric conversion efficiency and stability of the solar cell. For example, the thickness of the second electrode can be 10 nm, 15 nm, 20 nm, 30 nm, 50 nm, 80 nm, 100 nm, 120 nm, 150 nm, or any value within a range of two such values.

[0085] In some embodiments, the conductive connection structure 70 is made of a material with a sheet resistance of less than or equal to 80 Ω / □, and is used for conductive connection between two adjacent battery cells. The material of the conductive connection structure 70 includes one or more of metals and their alloys, transparent conductive oxides, carbon-based materials, and organic conductive materials. The selection of materials is described above and will not be repeated here.

[0086] In some embodiments, the conductive connection structure 70 and the second electrode 50 are made of the same material. For example, both the conductive connection structure 70 and the second electrode 50 are metallic materials, such as Cu. Thus, the conductive connection structure 70 and the second electrode 50 can be formed simultaneously in a one-step process, meaning the second electrode 50 and the conductive connection structure 70 are integrally formed. Therefore, the fabrication of the second electrode and the conductive connection structure can be completed in a single process step, which simplifies the manufacturing process.

[0087] In some embodiments, the first functional layer 301 includes an n-type semiconductor oxide and / or an insulating oxide. The n-type semiconductor oxide and / or insulating oxide are relatively stable and can effectively block the migration of anions in the first photoelectric conversion layer to the conductive connection structure, which is beneficial for further improving the photoelectric conversion efficiency and stability of the solar cell module.

[0088] In some embodiments, the n-type semiconductor oxide includes one or more of tin oxide, titanium oxide, zinc oxide, indium oxide, and gallium oxide; and / or, the insulating oxide includes one or more of aluminum oxide, zirconium oxide, and magnesium oxide. The aforementioned oxides are relatively stable and can effectively block the migration of anions in the first photoelectric conversion layer to the conductive connection structure, which is beneficial for improving the photoelectric conversion efficiency and stability of the solar cell device.

[0089] In some embodiments, the first functional layer 301 includes tin oxide. On one hand, tin oxide is relatively stable and does not readily react with other chemical substances, effectively blocking the migration of anions in the active layer. Simultaneously, as an n-type semiconductor oxide, tin oxide possesses high electron mobility and carrier concentration, which not only promotes electron transport to the second electrode 50 but also blocks hole diffusion to the second electrode 50. Therefore, it can further improve the photoelectric conversion efficiency and stability of the solar cell module. Furthermore, tin oxide has a relatively mature process for preparing a dense film layer, which can be obtained using a low-temperature process without high-temperature crystallization, further reducing process complexity and operational difficulty.

[0090] In some embodiments, the density of the first functional layer 301 is 2.5 g / cm³. 3 Up to 8g / cm 3 Optionally, it is 4g / cm³. 3 Up to 7g / cm 3 The density of the first functional layer is within the aforementioned range, reflecting the good compactness of the first functional layer 301. This allows for more effective physical blocking of migrating ions, which is more conducive to improving the photoelectric conversion efficiency and stability of the solar cell module. For example, the density of the first functional layer 301 is 2.5 g / cm³. 3 3g / cm 3 4g / cm 3 5g / cm 3 6g / cm 3 7g / cm 3 8g / cm 3 Or the value between any two values ​​within a range.

[0091] In some embodiments, when the first functional layer 301 is tin oxide, the density of the first functional layer 301 is 4 g / cm³. 3 Up to 6.5 g / cm 3 Optionally, it is 5.5 g / cm³. 3 Up to 6.5 g / cm 3 .

[0092] In some embodiments, when the first functional layer 301 is indium oxide, the density of the first functional layer 301 is 2.5 g / cm³. 3 Up to 8g / cm 3 Optionally, it is 4g / cm³. 3 Up to 6g / cm 3 .

[0093] In this disclosure, the density of the first functional layer can be tested using XRR (X-ray reflectivity) testing. Specifically, an X-ray source is used to provide a high-brightness X-ray beam, which is reflected from the plane at a very low incident angle; the testing instrument can be a Bruker D6 PHASER.

[0094] In some embodiments, the second functional layer 302 includes one or more of conductive oxides, metals, and alloys. Optionally, the second functional layer 302 includes a conductive oxide. The aforementioned conductive oxides, metals, and alloys have good conductivity, which can improve the electrical connection between the battery cells 20, thereby improving the photoelectric conversion efficiency and stability of the solar cell. When a conductive oxide is selected for the second functional layer 302, the conductive oxide is relatively stable and does not easily react with anions in the active layer. Therefore, the second functional layer 302 not only improves the conductivity of the solar cell but also further blocks the migration of migrating ions in the photoelectric conversion layer 201 to the conductive connection structure 70, thus further improving the photoelectric conversion efficiency and stability of the solar cell.

[0095] In some embodiments, the second functional layer 302 includes one or more of indium tin oxide (ITO), fluorine-doped tin oxide (FTO), indium-doped zinc oxide (IZO), aluminum-doped zinc oxide (AZO), boron-doped zinc oxide (BZO), antimony-doped tin oxide, and indium-doped tungsten oxide (IWO). These conductive oxides possess good electron mobility, which can improve the conductivity of the solar cell, thereby contributing to improved photoelectric conversion efficiency and stability.

[0096] In some embodiments, the thickness of the first functional layer 301 along the first direction is 10 nm to 100 nm, optionally 20 nm to 40 nm. This facilitates the first functional layer 301 in blocking the migration of anions from the first photoelectric conversion layer 201 to the conductive connection structure 70, thereby improving the photoelectric conversion efficiency and stability of the solar cell device. Exemplarily, the thickness of the first functional layer 301 along the first direction is a value between 10 nm, 20 nm, 40 nm, 60 nm, 80 nm, 100 nm, or any two of these values.

[0097] In some embodiments, the thickness of the second functional layer 302 along the first direction is 10 nm to 80 nm, optionally 40 nm to 60 nm. This is beneficial for the conductivity of the second functional layer 302 and also helps to control costs and reduce manufacturing complexity. For example, the thickness of the second functional layer 302 along the first direction is a value between 10 nm, 20 nm, 40 nm, 60 nm, 80 nm, or any two of these values.

[0098] In this disclosure, the term "layer" refers to any substantially layered structure. A layer may have a thickness that varies over its length. Typically, the thickness of a layer is approximately constant. As used in this disclosure, "thickness" of a layer refers to the average thickness of the layer. It should be understood that layers in this disclosure may have different thicknesses in different directions. Unless otherwise specified, the "thickness" of a "layer" in this disclosure has the meaning commonly understood by those skilled in the art. For example, the thickness of the first electrode 10 or the second electrode 50 is understood as the thickness of the first electrode 10 and the second electrode 50 along a second direction.

[0099] In some embodiments, the first photoelectric conversion layer 201 includes one or more of cadmium telluride, copper indium gallium selenide, and perovskite light-absorbing layers, wherein the cadmium telluride, copper indium gallium selenide, and perovskite light-absorbing layers are capable of generating electron-hole pairs based on the excitation of incident light. In some embodiments, the first photoelectric conversion layer 201 includes a perovskite light-absorbing layer.

[0100] In some embodiments, the perovskite light-absorbing layer includes at least one of the compounds shown in [A][B][X]3 and [A]2[C][D][X]6, wherein A includes one or more of a monovalent inorganic cation, an organic cation, or a mixed organic-inorganic cation; B includes at least one inorganic divalent cation; C includes at least one inorganic monovalent cation; D includes at least one inorganic trivalent cation; and X includes a monovalent anion.

[0101] For example, inorganic cations include Li + Na + K + 、Rb + and Cs + One or more of them.

[0102] For example, the organic cations include (NR1R2R3R4). + (R1R2N=CR3R4) + (R1R2N-C(R5)=NR3R4) + Or (R1R2N-C(NR5R6)=NR3R4) + One or more of the following, wherein R1, R2, R3, R4, R5 and R6 are each independently selected from H, substituted or unsubstituted C1 to C20 alkyl groups or substituted or unsubstituted aryl groups. Optionally, the organic cation includes one or more of methylamino, ethylamino, propylamino, butylamino, pentamino, hexamino, formamidinyl and imidazolyl.

[0103] For example, the inorganic divalent cation includes: Pb 2+ Sn 2+ Be 2+ Mg2+ Ca 2+ 、Sr 2+ Ba 2+ Zn 2+ 、Ge 2+ Fe 2+ Co 2+ Ni 2+ Cd 2+ Cu 2+ Mn 2+ Pd 2+ Yb 2+ Or Eu 2+ At least one of them.

[0104] For example, inorganic trivalent cations include: Bi 3+ Sb 3+ Cr 3+ Fe 3+ Co 3+ Ga 3+ As 3+ Ru 3+ ,Rh 3+ In 3+ Ir 3+ Au 3+ Or Al 3+ At least one of them.

[0105] For example, monovalent anions include F - Cl - ,Br - I - SCN - CNO - OCN - OSCN - SH - OH - CN - SeCN - One or more of them.

[0106] In some embodiments, the perovskite light-absorbing layer includes FA. 0.8 Cs 0.2 Pb(I 0.6 Br 0.4 3. Cs 0.05 FA 0.95 PbBr 0.15 I 2.85 One or more of MAPbI3, FAPbI3, etc.

[0107] In some embodiments, A includes CH3NH3 + CH(NH2)2+ Li + Na + K + 、Rb + Cs + One or more of the following; B includes Pb 2+ and / or Sn 2+ C includes Li + Na + K + 、Rb + Cs + One or more; X includes F - Cl - ,Br - I - SCN - CNO - OCN - OSCN - SH - OH - CN - SeCN - One or more of them.

[0108] It is understood that the first functional layer 301 and the second functional layer 302 are not necessarily disposed between the conductive connection structure 70 and the third functional layer 303, nor are they necessarily disposed simultaneously. For example, only the first functional layer 301 extends along the second direction between the third functional layer 303 and the conductive connection structure 70; or, only the second functional layer 302 extends along the second direction between the third functional layer 303 and the conductive connection structure 70. This is not a limitation. When the first functional layer 301 extends along the second direction between the third functional layer 303 and the conductive connection structure 70, the first functional layer 301 and the third functional layer 303 can be an integrally formed structure.

[0109] In some embodiments, the thickness of the third functional layer 303 along the second direction is 10 nm to 100 nm. This allows the thickness of the third functional layer 303 to be controlled within a suitable range, enabling both efficient electron transport and hole blocking, thus improving the photoelectric conversion efficiency of the solar cell. For example, the thickness of the third functional layer 303 along the second direction can be 10 nm, 20 nm, 30 nm, 40 nm, 50 nm, 6 nm, 70 nm, 80 nm, 90 nm, 100 nm, or any value within a range of two such values.

[0110] In some embodiments, the density of the third functional layer 303 is 3 g / cm³. 3 Up to 8g / cm 3 Optionally, it is 4g / cm³. 3Up to 7g / cm 3 The density of the third functional layer 303 is within the above range, which reflects the good compactness of the third functional layer 303. This allows for more effective physical blocking of holes, which is more conducive to improving the photoelectric conversion efficiency of the solar cell module.

[0111] In some embodiments, the third functional layer 303 includes one or more of tin oxide, titanium oxide, zinc oxide, indium oxide, and gallium oxide. These materials are capable of blocking holes and transporting electrons.

[0112] In some embodiments, the third functional layer 303 is made of the same material as the first functional layer 301, such as tin oxide. Thus, the two are integrally formed structures and can be prepared in one step, simplifying the preparation process.

[0113] In some embodiments, referring to Figure 4, the battery cell 20 further includes a fourth functional layer 304 located between the third functional layer 303 and the second electrode 50; the sheet resistance of the fourth functional layer 304 is less than or equal to 80 Ω / □. The fourth functional layer 304 can further improve the conductivity of the solar cell module while reducing the thickness of the metal electrode, thereby further improving the photoelectric conversion efficiency and stability of the solar cell module.

[0114] In some embodiments, the thickness of the fourth functional layer 304 along the second direction is 10 nm to 80 nm, optionally 40 nm to 60 nm. Thus, the thickness of the fourth functional layer 304 is controlled within a suitable range, which can reduce the thickness of the second electrode while maintaining conductivity, thereby reducing the risk of crater warping of the second electrode during the scribing process. This is beneficial for subsequent encapsulation processes and improves the photoelectric conversion efficiency and stability of the solar cell. For example, the thickness of the fourth functional layer 304 along the first direction is 10 nm, 20 nm, 40 nm, 60 nm, 80 nm, or any value within a range consisting of two such values.

[0115] In some embodiments, the fourth functional layer 304 includes one or more of conductive oxides, metals, and alloys. The definitions of conductive oxides, metals, and alloys are as described above and will not be repeated here.

[0116] In some embodiments, the fourth functional layer 304 is made of the same material as the second functional layer 302, such as both being conductive oxides. Thus, the two can be integrally formed and can be prepared in one step, simplifying the preparation process.

[0117] In some embodiments, the fourth functional layer 304 includes one or more of indium tin oxide (ITO), fluorine-doped tin oxide (FTO), indium-doped zinc oxide (IZO), aluminum-doped zinc oxide (AZO), boron-doped zinc oxide (BZO), antimony-doped tin oxide, and indium-doped tungsten oxide (IWO).

[0118] In some embodiments, referring to Figures 1 to 5, the battery cell 20 further includes a first hole transport layer 202 disposed between the first electrode 10 and the first photoelectric conversion layer 201; and / or, the battery cell 20 further includes a first electron transport layer 203 disposed between the first photoelectric conversion layer 201 and the third functional layer 303. The placement of the first hole transport layer 202 and / or the first electron transport layer 203 facilitates the extraction and transport of electrons / holes generated by the first photoelectric conversion layer 201, which is beneficial to improving the photoelectric conversion efficiency of the solar cell module. It is understood that the battery cell 20 may include one or both of the first hole transport layer 202 and the first electron transport layer 203. Further optionally, the battery cell 20 may include both the first hole transport layer 202 and the first electron transport layer 203 to promote the extraction and transport of electrons / holes. At this time, the obtained battery cell 20 includes a first electrode 10, a hole transport layer (first hole transport layer 202), a first photoelectric conversion layer 201, an electron transport layer (first electron transport layer 203) and a second electrode 50 stacked in sequence. The first electrode 10 is the electrode that first receives incident light. At this time, the solar cell module obtained by this disclosure is a module containing an inverted perovskite solar cell (pin).

[0119] It is understandable that, when a first hole transport layer 202 and / or a first electron transport layer 203 are provided, the first functional layer 301 and the second functional layer 302 are not necessarily disposed in, or not necessarily simultaneously disposed in, the conductive connection structure 70 and the first hole transport layer 202, and / or disposed between the conductive connection structure 70 and the first electron transport layer 203. For ease of understanding, the discussion here will focus on a scheme where a first hole transport layer 202 and a first electron transport layer 203 are provided. For example, the first functional layer 301 and the second functional layer 302 are disposed only between the conductive connection structure 70 and the first photoelectric conversion layer 201, and the first hole transport layer 202 and the first electron transport layer 203 are respectively in contact with or fill other functional layers of the conductive connection structure 70 along the first direction; in another example, only the first functional layer 301 extends along the second direction to the space between the first hole transport layer 202 and the conductive connection structure 70, or only the first functional layer 301 extends along the second direction to the space between the first electron transport layer 203 and the conductive connection structure 70; in yet another example, only the second functional layer 302 extends along the second direction to the space between the first hole transport layer 202 and the conductive connection structure 70, or only the second functional layer 302 extends along the second direction to the space between the first electron transport layer 203 and the conductive connection structure 70. No limitations are imposed here.

[0120] In some embodiments, referring to FIG2, the first functional layer 301 extends along the second direction between the first hole transport layer 202 and the conductive connection structure 70, and between the first electron transport layer 203 and the conductive connection structure 70; similarly, the second functional layer 302 extends along the second direction between the first hole transport layer 202 and the conductive connection structure 70, and between the first electron transport layer 203 and the conductive connection structure 70. This further enhances the blocking effect of the first functional layer and the conductivity-enhancing effect of the second functional layer, thereby improving the photoelectric conversion efficiency and stability of the solar cell device. Simultaneously, it simplifies the solar cell module fabrication process, eliminating the need for shielding between the first hole transport layer 202 and the conductive connection structure 70, and between the first electron transport layer 203 and the conductive connection structure 70, during the fabrication of the first functional layer 301 or the second functional layer 302.

[0121] This disclosure does not specifically limit the hole transport material used in the hole transport layer; hole transport materials commonly used in the art can be used. Exemplary examples include poly[bis(4-phenyl)(2,4,6-trimethylphenyl)amine] (PTAA), 2,2',7,7'-tetratetra[N,N-di(4-methoxyphenyl)amino]-9,9'-spirobifluorene (Spiro-OMeTAD), poly-3-hexylthiazole (P3HT), triphenylamine with a triphenylene core (H101), 3,4-ethylenedioxythiazole-methoxytriphenylamine (EDOT-OMeTPA), and N-(4-aniline)carbazole-spirobifluorene (…). CzPAF-SBF), poly(3,4-ethylenedioxythiazole): poly(styrene sulfonate) (PEDOT:PSS), polythiazole, nickel oxide (NiOx), molybdenum oxide (MoO3), cuprous iodide (CuI), cuprous oxide (CuO), and self-assembled molecules (SAMs) such as [2-(9H-carbazole-9-yl)ethyl]phosphonic acid (2PACz) and [4-(3,6-dimethyl-9H-carbazole-9-yl)butyl]phosphonic acid (Me-4PACz).

[0122] This disclosure does not specifically limit the electron transport material used in the electron transport layer; commonly used electron transport materials in the art can be used. For example, electron transport materials include at least one of imide compounds, quinone compounds, fullerenes and their derivatives, metal oxides, semiconductor oxides, titanates, fluorides and their derivatives, and materials obtained by doping or passivation. Exemplarily, imide compounds include at least one of phthalimide, succinimide, N-bromosuccinimide, glutarimide, or maleimide. Exemplarily, quinone compounds include at least one of benzoquinone, naphthoquinone, phenanthrenequinone, or anthraquinone. Exemplarily, fullerenes and their derivatives include fullerene C 60 Fullerene C 70 PCBM([6,6]-phenyl-C 61 methyl butyrate), [6,6]-phenyl C 71 Methyl butyrate (PC) 71 At least one of BM. Exemplarily, the metal element in the metal oxide includes at least one of Mg, Cd, Zn, In, Pb, W, Sb, Bi, Hg, Ti, Ag, Mn, Fe, V, Sn, Zr, Sr, Ga, and Cr; optionally, the metal oxide includes at least one of tin oxide (SnO2) and zinc oxide (ZnO). Exemplarily, the semiconductor material oxide includes silicon oxide. Exemplarily, the titanate includes at least one of strontium titanate and calcium titanate. Exemplarily, the fluoride includes at least one of lithium fluoride and calcium fluoride.

[0123] In some embodiments, referring to FIG3, the first functional layer 301 extends along the second direction to the surface of the first electrode 10 and along the first direction to at least part of the bottom of the second functional layer 302, i.e., the first functional layer 301 has an "L"-shaped structure. This allows the blocking effect of the first functional layer 301 to be better utilized, which is more conducive to improving the photoelectric conversion efficiency and stability of the solar cell device.

[0124] In this disclosure, the term "bottom" refers to the end that is close to the first electrode 10 along the second direction.

[0125] In some examples, the first functional layer 301 extends along a first direction to at least part of the bottom of the second functional layer 302. It may extend to part of the bottom of the second functional layer 302 or to the bottom of all the second functional layers 302, as long as it does not affect the electrical connection between adjacent battery cells 20.

[0126] In some embodiments, the conductive connection structure 70 is in direct contact with the first electrode 10. That is, there is no other filler layer or connecting layer between the conductive connection structure 70 and the first electrode 10. In other embodiments, the conductive connection structure 70 and the first electrode 10 are partially connected by a second functional layer 302, that is, the second functional layer 302 has an "L"-shaped structure, and a portion of the second functional layer 302 extends along the first direction between the conductive connection structure 70 and the first electrode 10. In still other embodiments, the conductive connection structure 70 and the first electrode 10 are completely connected by the second functional layer 302, that is, the second functional layer 302 extends along the first direction to the bottom of the conductive connection structure 70 and physically isolates the direct contact between the conductive connection structure 70 and the first electrode 10.

[0127] In some embodiments, referring to FIG3, a second functional layer 302 extends along a second direction and is disposed between the conductive connection structure 70 and the first electrode 10. The dimension d2 of the second functional layer 302 between the conductive connection structure 70 and the first electrode 10 along the first direction is greater than the dimension d1 of the conductive connection structure 70 along the first direction. In this way, the second functional layer located between the conductive connection structure and the first electrode can realize the electrical connection between adjacent first and second battery cells, thereby further improving the conductivity of the solar cell module, and thus further improving the photoelectric conversion efficiency and stability of the solar cell module.

[0128] In some embodiments, the solar cell module 200 includes: a plurality of battery cells 20 arranged along a first direction, each battery cell 20 including a first electrode 10, a first hole transport layer 201, a first photoelectric conversion layer 201, a first electron transport layer 202, a third functional layer 303, a fourth functional layer 304, and a second electrode 50 stacked sequentially along a second direction; a conductive connection structure 70 disposed between adjacent first and second battery cells in the plurality of battery cells 20, the conductive connection structure 70 being used to connect the first electrode 10 of the first battery cell and the second electrode 50 of the second battery cell; wherein, a first functional layer 301 and a second functional layer 302 are disposed between the conductive connection structure 70 and the first photoelectric conversion layer 201, and the second functional layer 302 is disposed between the conductive connection structure 70 and the first functional layer 301.

[0129] In some embodiments, referring to Figures 1 to 5, the solar cell module 200 further includes a first isolation structure 401, which is disposed between the first electrodes 10 of adjacent first and second battery cells in the plurality of battery cells 20. The first isolation structure 401 is used to isolate the first electrodes 10 of adjacent first battery cells and second battery cells to prevent short circuits between adjacent first and second battery cells. This disclosure does not impose specific limitations on the dimensions of the first isolation structure 401 along the first direction, its dimensions along the second direction, or its shape, as long as it can achieve the isolation of the first electrodes 10 of adjacent battery cells 20.

[0130] For example, referring to Figure 4, the first isolation structure 401 can be a groove penetrating the first electrode 10. That is, the first isolation structure 401 extends along the second direction from the first surface 101 of the first electrode 10 to the second surface 102 of the first electrode 10. The first isolation structure 401 can be filled with insulating material or the material of the first photoelectric conversion layer 201. In the case of including the first hole transport layer 202, the first isolation structure 401 can be filled with the material of the first hole transport layer 202. For another example, the first isolation structure 401 penetrates the first electrode 10 and the substrate 60 along the second direction. For another example, the first isolation structure 401 penetrates the first hole transport layer 202 and the first electrode 10 along the second direction. The first isolation structure 401 can be filled with insulating material or the material of the first hole transport layer 202. For yet another example, the first isolation structure 401 is an insulating wall extending along the second direction from the first surface 101 of the first electrode 10 to the second surface 102 of the first electrode 10. The insulating wall is formed of insulating material.

[0131] In some embodiments, the conductive connection structure 70 and the first isolation structure 401 are spaced apart along the first direction.

[0132] In some embodiments, the distance between the first isolation structure 401 and the conductive connection structure 70 along the first direction is 20 μm to 50 μm. This facilitates the fabrication of the conductive connection structure, reducing the difficulty of the manufacturing process; and it also helps to reduce material waste between the first isolation structure and the conductive connection structure.

[0133] It should be noted that the distance between the first isolation structure 401 and the conductive connection structure 70 along the first direction refers to the minimum distance between the edge of the first isolation structure 401 near the conductive connection structure 70 and the edge of the conductive connection structure 70 near the first isolation structure 401.

[0134] In some embodiments, referring to Figures 1 to 5, the solar cell module 200 further includes a second isolation structure 402, which is disposed between the second electrodes 50 of adjacent first and second battery cells in a plurality of battery cells. The second isolation structure 402 is used to isolate the second electrodes 50 of adjacent first battery cells 20 and adjacent second battery cells 20. This disclosure does not impose specific limitations on the dimensions of the second isolation structure 402 along the first and second directions, or on the shape of the second isolation structure 402, as long as it can achieve the isolation of the second electrodes 50 of adjacent battery cells 20.

[0135] For example, referring to Figure 4, the second isolation structure 402 is a groove extending along a second direction from the second surface 502 of the second electrode 50 to the first surface 101 of the first electrode 10, wherein the second surface 502 of the second electrode 50 is the surface of the second electrode 50 away from the first electrode 10. As another example, the second isolation structure 402 is an insulating wall extending along a second direction from the second surface 502 of the second electrode 50 to the first surface 101 of the first electrode 10, the insulating wall being formed of an insulating material.

[0136] In some embodiments, the conductive connection structure 70 and the second isolation structure 402 are spaced apart along the first direction.

[0137] In some embodiments, along the first direction, the first isolation structure 401, the conductive connection structure 70, and the second isolation structure 402 are arranged alternately at intervals.

[0138] In some embodiments, the distance between the second isolation structure 402 and the conductive connection structure 70 along the first direction is 10 μm to 40 μm. This facilitates the fabrication of the second isolation structure, reducing the difficulty of the manufacturing process, and also helps to minimize material waste between the conductive connection structure and the second isolation structure.

[0139] It should be noted that the distance between the second isolation structure 402 and the conductive connection structure 70 along the first direction refers to the minimum distance between the edge of the second isolation structure 402 near the conductive connection structure 70 and the edge of the conductive connection structure 70 near the second isolation structure 402.

[0140] In this disclosure, the distance between the first isolation structure 401 and the conductive connection structure 70, and the distance between the second isolation structure 402 and the conductive connection structure 70, can be measured using an optical microscope.

[0141] In some embodiments, referring further to Figures 1 to 5, the solar cell 100 also includes a substrate 60 disposed on the side of the first electrode 10 away from the first photoelectric conversion layer 20, the substrate 60 serving to support the solar cell. The substrate may be, but is not limited to, a glass substrate or a flexible substrate. In some embodiments, the material of the flexible substrate layer may be, for example (but not limited to), an organic polymer material, and further, may be a mixture of one or more of the following materials in different proportions: including but not limited to polyvinyl alcohol (PVA), polyester (PET), polyimide (PI), polyethylene naphthalate (PEN), polydimethylsiloxane (PDMS), etc.

[0142] In some embodiments, referring to Figure 5, when the battery cell 20 includes a first electron transport layer 203, the battery cell 20 also includes a second photoelectric conversion layer 204 located between the first electron transport layer 203 and the third functional layer 303. The band gap of the second photoelectric conversion layer 204 is different from that of the first photoelectric conversion layer 201. That is, the battery cell 20 contains two photoelectric conversion layers with different band gaps. In this way, the second photoelectric conversion layer 204 and the first photoelectric conversion layer 201 can absorb light of different wavelengths, which is beneficial to improving the efficiency of the solar cell module.

[0143] In some embodiments, referring to Figure 5, a first functional layer 301 and a second functional layer 302 are disposed between the conductive connection structure 70 and the second photoelectric conversion layer 204, with the second functional layer 302 positioned between the conductive connection structure 70 and the first functional layer 301. Thus, the first functional layer 301 acts as a physical barrier, preventing the migration of anions from the second photoelectric conversion layer 204 to the conductive connection structure 70, thereby improving the photoelectric conversion efficiency and stability of the solar cell device. The second functional layer 302 has a low sheet resistance, indicating good electronic conductivity. Therefore, placing the second functional layer 302 between the first functional layer 301 and the conductive connection structure 70 can further improve the conductivity of the solar cell module 200, further enhancing its photoelectric conversion efficiency and stability.

[0144] In some embodiments, where the battery cell 20 includes a first electron transport layer 203 (referring to FIG5), the battery cell 20 further includes a connecting layer 80 located between the first electron transport layer 203 and the second photoelectric conversion layer 204. This battery cell 20 is a tandem solar cell. The tandem solar cell includes two battery sections: a first electrode 10, a first hole transport layer 202, a first photoelectric conversion layer 201, and a first electron transport layer 203 constitute the first battery section; a second photoelectric conversion layer 204, a third functional layer 303, and a second electrode 16 constitute the second battery section. The two battery sections are spaced apart or connected by the connecting layer 80.

[0145] In some embodiments, the connecting layer 80 is a composite layer used to connect the first and second battery sections on both sides. Specifically, electrons from the first photoelectric conversion layer 201 and holes from the second photoelectric conversion layer 204 recombine and annihilate in the connecting layer 80 (composite layer), thereby achieving circuit connection between the two battery sections. Thus, the fabrication of the resulting tandem solar cell is simple. A second battery section containing the second photoelectric conversion layer 204 can be directly fabricated on the first battery section containing the first photoelectric conversion layer 201, or a first battery section containing the first photoelectric conversion layer 201 can be directly fabricated on the second battery section containing the second photoelectric conversion layer 204, forming a single, complete tandem solar cell. Forming a two-end tandem solar cell helps improve the stability of the tandem solar cell.

[0146] In some embodiments, referring to Figure 5, the battery cell 20 further includes a second hole transport layer 205 and a second electron transport layer 206. The second hole transport layer 205 is located between the connecting layer 80 and the second photoelectric conversion layer 204, and the second electron transport layer 206 is located between the second photoelectric conversion layer 204 and the second electrode 50. That is, the battery cell 20 also includes a first electrode 10, a first photoelectric conversion layer 201, a connecting layer 80, a second hole transport layer 205, a second photoelectric conversion layer 204, a second electron transport layer 206, a third functional layer 303, and a second electrode 50, stacked sequentially. The arrangement of the second hole transport layer 205, the second photoelectric conversion layer 204, and the second electron transport layer 206 facilitates the extraction and transport of electrons and holes, improving the carrier transport rate and thus improving the performance of the solar cell. Furthermore, in the case where the battery cell includes a first hole transport layer 202 and a first electron transport layer 203, the connecting layer 80 is located on the side of the first electron transport layer 203 away from the first electrode 10. The second hole transport layer 205 and the second electron transport layer 206 are selected from materials used in the hole transport layer and the electron transport layer, as defined above, and will not be repeated here.

[0147] In some embodiments, referring to Figure 5, the first functional layer 301 and the second functional layer 302 may extend between the connecting layer 80, the second hole transport layer 205, the second electron transport layer 206, and the conductive connection structure 70. It is understood that the extension positions of the first functional layer 301 and the second functional layer 302 are not strictly limited; they may extend between one or more of the connecting layer 80, the second hole transport layer 205, and the second electron transport layer 206 and the conductive connection structure 70, or they may not extend at all.

[0148] In some embodiments, the component of the connecting layer 80 includes one or more of metals, transparent conductive oxides, and elemental carbon materials. The specific material selection is the same as defined above and will not be repeated here.

[0149] In some embodiments, the thickness of the interconnect layer 80 is from 0.1 nm to 200 nm. For example, it may be 0.1 nm, 0.8 nm, 1 nm, 2 nm, 10 nm, 30 nm, 50 nm, 90 nm, 100 nm, 130 nm, 150 nm, 160 nm, 200 nm, or within the range of any two of the above point values ​​as end values.

[0150] In some embodiments, the battery cell 20 further includes a fifth functional layer (not shown) located between the first photoelectric conversion layer 201 and the connecting layer 80. Optionally, when the battery cell 20 (tandem solar cell) includes a first electron transport layer 203, the fifth functional layer is located between the first electron transport layer 203 and the connecting layer 80.

[0151] In some embodiments, the battery cell 20 further includes a sixth functional layer (not shown) located between the first photoelectric conversion layer 201 and the connecting layer 80. Optionally, when the battery cell 20 (tandem solar cell) includes a first electron transport layer 203, the sixth functional layer is located between the first electron transport layer 203 and the connecting layer 80. More preferably, when a fifth functional layer is included, the sixth functional layer is located between the fifth functional layer and the connecting layer 80.

[0152] In some embodiments, the fifth functional layer includes an n-type semiconductor material; optionally, the fifth functional layer includes one or more of tin oxide, titanium oxide, zinc oxide, indium oxide, and gallium oxide; optionally, the fifth functional layer and the first functional layer 301 are integrally formed; more preferably, the density of the fifth functional layer is 3 g / cm³. 3 Up to 8g / cm 3 .

[0153] In some implementations, the thickness of the fifth functional layer along the second direction is 10 nm to 100 nm.

[0154] In some embodiments, the sixth functional layer includes one or more of conductive oxides, metals, and alloys; optionally, the sixth functional layer and the second functional layer 302 are integrally formed.

[0155] In some implementations, the thickness of the sixth functional layer along the second direction is 10 nm to 80 nm.

[0156] In some embodiments, the battery cell 20 may also include two or more battery units, such as three, four or more. In this disclosure, the battery cell has a stacked structure, and therefore can have higher efficiency.

[0157] In some embodiments, the second photoelectric conversion layer 204 includes any one of a copper indium gallium selenide (CIGS) light-absorbing layer, a cadmium telluride (CdT) light-absorbing layer, and a perovskite light-absorbing layer. That is, the second cell section can be a CIGS solar cell section, a CdT solar cell section, or a perovskite solar cell section. Correspondingly, the tandem solar cell can be a perovskite / CIGS tandem solar cell, a perovskite / CdT tandem solar cell, or a full perovskite tandem solar cell. Optionally, the second photoelectric conversion layer 204 includes a perovskite light-absorbing layer.

[0158] In some embodiments, the band gap of the first photoelectric conversion layer 201 is larger than the band gap of the second photoelectric conversion layer 204. Thus, the first photoelectric conversion layer 201 is used to absorb short-wavelength light, and the second photoelectric conversion layer 204 is used to absorb long-wavelength light, which is beneficial for improving the absorption efficiency of sunlight, thereby improving the photoelectric conversion efficiency.

[0159] For example, the band gap of the first photoelectric conversion layer 201 is E g1 1.6eV <E g1 ≤2.2eV, the band gap of the second photoelectric conversion layer 204 is E g2 1.2eV≤E g2 ≤1.6eV.

[0160] This disclosure does not impose any particular limitation on the bandgap measurement method. Exemplarily, the bandgap measurement method may include: first, obtaining an ultraviolet absorption curve by ultraviolet absorption spectroscopy; and then calculating the bandgap of the perovskite absorbing layer using the Tau equation.

[0161] In some embodiments, the solar cell module 200 can also form a mechanically tandem cell with other types of solar cells. The solar cell module 200 is connected to other types of solar cells through an insulating layer, and the resulting solar cell is a mechanically tandem cell. In a mechanically tandem cell, the two stacked solar cells are electrically isolated, each cell section has two electrodes, for a total of four electrodes, and the circuits of the two cell sections are independent of each other, forming a four-terminal tandem solar cell. Therefore, the current of the tandem solar cell can be adjusted.

[0162] In some embodiments, other types of solar cells may be copper indium gallium selenide (CIGS) solar cells, cadmium telluride (CdTe) solar cells, monocrystalline silicon solar cells, polycrystalline silicon solar cells, or perovskite solar cells. Correspondingly, tandem solar cells may be perovskite / CIGS tandem solar cells, perovskite / CdTe tandem solar cells, perovskite / monocrystalline silicon tandem solar cells, perovskite / polycrystalline silicon tandem solar cells, or all-perovskite tandem solar cells. When the solar cell module 200 itself is a two-terminal tandem solar cell, the tandem solar cell may also be a three-terminal tandem solar cell, which will not be elaborated here.

[0163] In some embodiments, the material of the insulating layer includes, but is not limited to, glass or an insulating adhesive. Further, the glass is transparent glass; further, the insulating adhesive is a transparent adhesive.

[0164] Methods for preparing solar cell modules

[0165] A second aspect of this disclosure provides a method for fabricating a solar cell module, used to fabricate the solar cell module 200 shown in the first aspect above. The method includes: forming a plurality of battery cells arranged along a first direction and forming a conductive connection structure; each battery cell includes a first electrode, a second electrode, and a first photoelectric conversion layer and a third functional layer arranged along a second direction, the third functional layer being disposed between the first photoelectric conversion layer and the second electrode, the first direction intersecting the second direction; the conductive connection structure is disposed between adjacent first and second battery cells in the plurality of battery cells, the conductive connection structure being used to connect the first electrode of the first battery cell and the second electrode of the second battery cell; wherein, a first functional layer and a second functional layer are disposed between the conductive connection structure and the first photoelectric conversion layer, the second functional layer being disposed between the conductive connection structure and the first functional layer; the first functional layer includes a semiconductor material and / or an insulating material; the sheet resistance of the second functional layer is less than or equal to 80 Ω / □; the third functional layer includes an n-type semiconductor material.

[0166] The above method can be used to form a solar cell module comprising a first functional layer, a second functional layer, and a third functional layer. Since the first functional layer includes semiconductor materials and / or insulating materials, which are relatively stable and do not readily react with anions in the first photoelectric conversion layer, nor affect carrier transport, the first functional layer can act as a physical barrier to prevent ions in the active layer from migrating to the conductive connection structure (or the second electrode), thereby improving the photoelectric conversion efficiency and stability of the solar cell module. Furthermore, the second functional layer has a low sheet resistance, reflecting its good electronic conductivity. Therefore, placing the second functional layer between the first functional layer and the conductive connection structure can further improve the conductivity of the solar cell module, further enhancing its photoelectric conversion efficiency and stability. The third functional layer acts as a physical barrier, preventing the migration of anions and holes in the first photoelectric conversion layer 201 to the second electrode 50. Moreover, since it includes n-type semiconductor materials, which facilitate electron transport and block hole transport, the presence of the third functional layer can further improve the stability of the solar cell module.

[0167] Figures 6 to 12 are schematic diagrams of the structure during the fabrication process of a solar cell module according to an embodiment of the present disclosure. The fabrication process of the solar cell module 200 in the present disclosure will be described in detail below with reference to Figures 6 to 12.

[0168] In some embodiments, referring to Figures 6 and 7, the fabrication process includes providing a plurality of first electrodes arranged sequentially along a first direction, with a first isolation structure disposed between adjacent first electrodes. In one specific embodiment, the process includes providing a substrate and a conductive coating located on the surface of the substrate, etching the conductive coating to form a plurality of isolation channels P1 and first electrodes 10.

[0169] Here, the substrate and the conductive coating on the substrate surface can be, for example, conductive glass containing an FTO coating or conductive glass containing an ITO coating. The conductive coating can be etched using infrared laser etching. The etched isolation channel P1 can divide the conductive coating into multiple first electrodes 10, i.e., multiple battery cells. In this disclosure, the etched conductive coating and substrate are sequentially cleaned with acetone, isopropanol, and deionized water, and then dried to form the first electrode 10.

[0170] In some embodiments, the isolation channel P1 can be used directly as the first isolation structure 401, or it can be used as the first isolation structure 401 after being filled with insulating material. For example, the first isolation structure 401 can be formed by filling the isolation channel P1 with insulating material using methods such as magnetron sputtering.

[0171] In some embodiments, please continue to refer to FIG7. The fabrication process includes: forming a plurality of first photoelectric conversion layers 201 arranged at intervals along a first direction on the first electrode 10 and the first isolation structure 401, and the isolation channel P2 between adjacent first photoelectric conversion layers 201 exposes the first electrode 10.

[0172] In some embodiments, the first photoelectric conversion layer 201 can be formed by a slot coating method, followed by annealing at 140°C to 170°C for 10 to 20 minutes. The thickness of the formed first photoelectric conversion layer 201 can be, for example, 400 nm to 700 nm, and the material of the first photoelectric conversion layer 201 can be, for example, FAPbI3. In other embodiments, the first photoelectric conversion layer 201 can be formed by other methods, such as liquid phase methods like spin coating or spray coating, or vapor phase methods like vapor deposition.

[0173] In some embodiments, referring to FIG7, before forming the first photoelectric conversion layer 201, a plurality of first hole transport layers 202 are formed on the first electrode 10 and the first isolation structure 401 at intervals along a first direction. Optionally, the first hole transport layers 202 can be formed by magnetron sputtering, and the thickness of the first hole transport layers can be, for example, 5 nm to 40 nm.

[0174] In some embodiments, referring to FIG7, after forming the first photoelectric conversion layer 201, a first electron transport layer 203 is formed on the surface of the first photoelectric conversion layer 201. Optionally, the first electron transport layer 203 can be formed by thermal evaporation, which is performed under vacuum conditions with a vacuum degree of 1.0*10. -4 Pa up to 8.0*10 -4 Pa, the thickness of the first electron transport layer 203 formed can be, for example, 10 nm to 80 nm.

[0175] In some embodiments, infrared laser etching can be used to form the first photoelectric conversion layer 201 and the isolation channel P2 arranged at intervals. Referring to Figure 7, the isolation channel P2 is located on the right side of the first isolation structure 401 along the first direction. The dimension of the isolation channel P2 along the first direction is 140μm to 160μm, and the distance between the first isolation structure 401 and the isolation channel P2 is 20μm to 50μm.

[0176] In some embodiments, referring to Figures 8 and 9, the fabrication process includes the steps of: forming a first functional layer 301 on the surface of the first photoelectric conversion layer 201 facing the isolation channel P2 and a portion of the surface of the first electrode 10 facing the isolation channel P2, and forming a third functional layer 303 on the surface of the first photoelectric conversion layer 201 facing the second electrode. The first functional layer 301 includes an n-type semiconductor oxide and / or an insulating oxide, and the third functional layer 301 includes an n-type semiconductor material.

[0177] In some specific embodiments, a first initial functional layer 301a is formed on the surface of the first electron transport layer 203 facing away from the first photoelectric conversion layer 201 and on the inner wall of the isolation channel P2. The first initial functional layer 301a located on the surface of the first electron transport layer 203 facing away from the first photoelectric conversion layer 201 constitutes a third functional layer 303. A portion of the first initial functional layer 301a in the middle of the surface of the first electrode 10 facing the isolation channel P2 is removed, forming the first functional layer 301 located on the surface of the first photoelectric conversion layer 201 facing the isolation channel P2 and a portion of the surface of the first electrode 10 facing the isolation channel P2. It can be understood that removing the portion of the first initial functional layer 301a in the middle of the surface of the first electrode 10 facing the isolation channel P2 means that the portion of the first initial functional layer 301a etched away is located in the non-edge region of the first electrode 10, preventing the first functional layer 301 from not completely covering the first photoelectric conversion layer 201, that is, ensuring that the first functional layer 301 covers the first photoelectric conversion layer 201, thereby improving the stability of the solar cell. When the first functional layer 301 and the first photoelectric conversion layer 201 can be completely covered, the first initial functional layer 301a etched away can be the central region of the surface. In this disclosure, all or part of the first initial functional layer 301a on the surface of the central region can be removed, or it can be all of the other regions of the first functional layer 301 that are not in contact with the first photoelectric conversion layer 201. For ease of operation, it is further preferred that the portion of the first initial functional layer 301a etched away is located in the central region of the surface of the first electrode 10.

[0178] In some embodiments, the material of the first initial functional layer 301a may be tin oxide, and the thickness of the first initial functional layer 301a along the first direction may be, for example, 10 nm to 100 nm. Optionally, the third functional layer 303 includes one or more of tin oxide, titanium oxide, zinc oxide, and indium oxide. In some specific embodiments, the third functional layer 303 and the first initial functional layer 301a are integrally formed and can be prepared in a one-step process, thereby simplifying the fabrication process.

[0179] In some embodiments, the thickness of the first functional layer 301 along the first direction is 10 nm to 100 nm.

[0180] In some embodiments, the thickness of the third functional layer 303 is 10 nm to 100 nm. The density of the third functional layer 303 is 3 g / cm³. 3 Up to 8g / cm 3 .

[0181] In some embodiments, the first initial functional layer 301a can be formed by atomic layer deposition (ALD), and the density of the first functional layer 301 formed by the ALD process is 2.5 g / cm³. 3 Up to 8g / cm 3 Atomic layer deposition (ALD) is a method in which a precursor is alternately pulsed into a reactor and chemically adsorbed and reacted on a substrate to form a deposited film. Taking the formation of metal oxides by ALD as an example, a metal source and an oxygen source are alternately pulsed into the reactor for ALD, and an inert gas is introduced between the metal source and the oxygen source to purge the reaction chamber. The metal source can be one or more organometallic sources, such as organotin sources, organotitanium sources, and organoindium sources, and the oxygen source includes one or more of water and ozone. Specifically, in this disclosure, by controlling the single purging time of the inert gas introduced between the metal source and the oxygen source within the range of 1 s to 120 s, a film with a density of 2.5 g / cm³ can be formed. 3 Up to 8g / cm 3 First initial functional layer 301a.

[0182] In some embodiments, the first initial functional layer 301a can be etched using infrared laser etching to form the first functional layer 301. In this case, the size of the isolation channel P2 along the first direction is 80 μm to 100 μm.

[0183] In some embodiments, the first functional layer 301 includes an n-type semiconductor oxide; alternatively, the first functional layer 301 includes tin oxide.

[0184] In some embodiments, referring to FIG10, the fabrication process includes forming a second functional layer 302 on the surface of the first functional layer 301 in the isolation channel P2 away from the first photoelectric conversion layer and on the surface of the first functional layer away from the first electrode 10 by magnetron sputtering.

[0185] In some embodiments, the second functional layer 302 includes one or more of conductive oxides, metals, alloys, carbon-based materials, and organic conductive materials. Optionally, the second functional layer 302 includes one or more of indium tin oxide (ITO), fluorine-doped tin oxide (FTO), indium-doped zinc oxide (IZO), aluminum-doped zinc oxide (AZO), boron-doped zinc oxide (BZO), antimony-doped tin oxide, and indium-doped tungsten oxide (IWO). More preferably, the second functional layer 302 includes indium tin oxide (ITO).

[0186] In some implementations, the thickness of the second functional layer 302 along the first direction can be, for example, 10 nm to 80 nm.

[0187] In some embodiments, the third functional layer 303 can be formed by atomic layer deposition (ALD), and the density of the third functional layer 303 formed by ALD is 3 g / cm³. 3 Up to 8g / cm 3 Atomic layer deposition (ALD) is a method in which a precursor is alternately pulsed into a reactor and chemically adsorbed and reacted on a substrate to form a deposited film. Taking the formation of metal oxides by ALD as an example, a metal source and an oxygen source are alternately pulsed into the reactor for ALD, and an inert gas is introduced between the metal source and the oxygen source to purge the reaction chamber. The metal source can be one or more organometallic sources, such as organotin sources, organotitanium sources, and organoindium sources, and the oxygen source includes one or more of water and ozone. Specifically, in this disclosure, by controlling the single purging time of the inert gas introduced between the metal source and the oxygen source within the range of 1 s to 120 s, a film with a density of 3 g / cm³ can be formed. 3 Up to 8g / cm 3 Third functional layer 303.

[0188] In some embodiments, when a fourth functional layer is present, the fabrication process further includes: forming a fourth functional layer 304 on the surface of the first photoelectric conversion layer 201; and, when a third functional layer 303 is included, forming a fourth functional layer 304 on the surface of the third functional layer 303. The fourth functional layer 304 includes one or more of indium tin oxide (ITO), fluorine-doped tin oxide (FTO), indium-doped zinc oxide (IZO), aluminum-doped zinc oxide (AZO), boron-doped zinc oxide (BZO), antimony-doped tin oxide, and indium-doped tungsten oxide (IWO).

[0189] In some specific embodiments, the fourth functional layer 304 and the second functional layer 302 are integrally formed structures and can be prepared in one step, thereby simplifying the preparation process.

[0190] In some implementations, the thickness of the fourth functional layer 304 is 10 nm to 80 nm.

[0191] In some embodiments, referring to Figures 11 and 12, the fabrication process includes: forming a plurality of conductive structures 50b spaced apart along a first direction on the surface of the third functional layer 303 facing away from the first photoelectric conversion layer 201 and within the isolation channel P2; wherein, the conductive structures 50b located within the isolation channel P2 constitute a conductive connection structure 70, and the conductive structures 50b located on the surface of the third functional layer 303 facing away from the first photoelectric conversion layer 201 constitute a second electrode 50; adjacent conductive structures 50b are isolated by a second isolation structure 402. Specifically, an initial conductive structure 50a is formed on the surface of the fourth functional layer 304 and the surface of the second functional layer 302, and the initial conductive structure 50a is etched until the first electrode 10 is exposed, forming an isolation channel P3 (i.e., the second isolation structure 402) and a plurality of conductive structures 50b arranged along the first direction. The first electrode 10, the first hole transport layer 202, the first photoelectric conversion layer 201, the first electron transport layer 203, the third functional layer 303, the fourth functional layer 304, and the second electrode 50 are stacked sequentially along the second direction to form a battery cell 20.

[0192] In some embodiments, the initial conductive structure 50a can be formed by thermal evaporation, and the initial conductive structure 50a can be, for example, metallic copper.

[0193] In some embodiments, picosecond green laser etching technology can be used to etch the initial conductive structure 50a to form the second isolation structure 402. Referring to Figure 12, the second isolation structure 402 is located on the right side of the isolation channel P2 along the first direction. The size of the second isolation structure 402 along the first direction is 10 μm to 20 μm, and the distance between the second isolation structure 402 and the isolation channel P2 is 10 μm to 40 μm.

[0194] In some embodiments, the method for preparing a solar cell module further includes edge cleaning and film lamination; the solar cell module prepared above is subjected to infrared edge cleaning, and then transparent ethylene-vinyl acetate copolymer (EVA) resin, crosslinking curing agent, antioxidant, and silane coupling agent are blended and extruded to obtain a film, and the film is laminated with the edge-cleaned device at 100°C to 110°C to obtain a solar cell module.

[0195] photovoltaic modules

[0196] A third aspect of this disclosure provides a photovoltaic module, including the solar cell module of the first aspect described above, or including a solar cell module prepared according to the preparation method of the second aspect described above. In some embodiments, the photovoltaic module further includes solder strips connecting the solar cell modules, a junction box for current transmission, and a cell encapsulation component.

[0197] In some embodiments, the battery encapsulation component includes photovoltaic glass. The photovoltaic glass covers the aforementioned solar cell module, serving to protect it. Simultaneously, the photovoltaic glass possesses excellent light transmittance and high hardness, allowing it to withstand large diurnal temperature variations and harsh weather conditions.

[0198] In some embodiments, the battery encapsulation component includes an ethylene-vinyl acetate copolymer (EVA) film disposed between the photovoltaic glass and the solar cell module for bonding the photovoltaic glass and the solar cell module.

[0199] In some implementations, the battery encapsulation components include a photovoltaic backsheet. The photovoltaic backsheet serves to protect the solar cell module.

[0200] Optionally, the photovoltaic backsheet material may include a polyvinyl fluoride composite film or a thermoplastic elastic material. The photovoltaic backsheet material possesses properties such as insulation, water resistance, and aging resistance.

[0201] In some implementations, the battery encapsulation component includes a solar aluminum frame, made of aluminum alloy, which features high strength and corrosion resistance. It serves to support and protect the solar cell module.

[0202] Power generation unit

[0203] A fourth aspect of the present disclosure provides a power generation device, including the solar cell module of the first aspect described above, or including a solar cell module prepared according to the preparation method of the second aspect described above.

[0204] Electrical appliances

[0205] A fifth aspect of the present disclosure also provides an electrical device comprising a solar cell module as described in the first aspect, or a solar cell module prepared according to the preparation method of the second aspect.

[0206] In some implementations, the electrical appliances include lighting equipment, energy storage equipment, etc., but are not limited to these. For example, electrical appliances include solar water heaters, solar streetlights, solar photovoltaic generators, etc.

[0207] Example

[0208] The following describes embodiments of this disclosure. The embodiments described below are exemplary and are only used to explain this disclosure, and should not be construed as limiting this disclosure. Where specific techniques or conditions are not specified in the embodiments, they are performed according to the techniques or conditions described in the literature in the art or according to the product instructions. Reagents or instruments used, unless otherwise specified, are all conventional products that can be obtained commercially.

[0209] Example 1

[0210] Fabrication of solar cell modules

[0211] Step 1, Preparation of the first electrode: A 30cm*30cm fluorine-doped tin oxide (FTO, 500nm thick) conductive glass is laser-etched to form an isolation channel P1 and a conductive glass block with a width of 30μm; the surface of the etched conductive glass block is sequentially cleaned with acetone, isopropanol, and deionized water and then dried, and the cleaned conductive glass block is used as the first electrode.

[0212] Step 2, prepare the first hole transport layer: deposit nickel oxide on the surface of the first electrode using magnetron sputtering as the first hole transport layer, the thickness of the first hole transport layer is 15nm; nickel oxide is also formed in the isolation channel P1, the nickel oxide in the isolation channel P1 constitutes the first isolation structure that isolates the adjacent first electrodes;

[0213] Step 3, prepare perovskite light-absorbing layer: FAPbI3 is coated on the surface of the first hole transport layer using the slit coating method to form a perovskite wet film. Then, the perovskite wet film is annealed at 150°C for 10 min to obtain the perovskite light-absorbing layer (i.e. the first photoelectric conversion layer). The thickness of the perovskite light-absorbing layer is 500 nm.

[0214] Step 4, Fabrication of the first electron transport layer: Place the device obtained in Step 3 into a vacuum thermal evaporation apparatus and evacuate to a vacuum level of 4*10. -4 Pa, and then deposit 30 nm of C60 on the perovskite light-absorbing layer to form the first electron transport layer;

[0215] Step 5: Fabrication of the first and third functional layers: Laser etching of the device obtained in step 4 forms an isolation channel P2 with a width of 150 μm. The isolation channel P2 extends to the surface of the first electrode, and the spacing between the isolation channel P2 and the isolation channel P1 is 20 μm. Then, SnO2 is deposited on the inner wall of the first electron transport layer and the isolation channel P2 using atomic layer deposition technology. The tin source for deposition is tetratetra(dimethylamino)tin (TDMASn), the oxygen source is water, and the pulse and purge times are TDMASn. The reaction process involves 0.5 s of nitrogen gas followed by 3 s of water gas, then 5 s of nitrogen gas. The local pressure is 50 mtorr, the rinsing flow rate is 5000 sccm, the reaction temperature is 100℃, and the source temperature is 45℃, forming a first initial functional layer. This first initial functional layer, located on the surface of the first electron transport layer, constitutes the third functional layer. Then, laser etching is used to etch the first initial functional layer in the middle of the isolation channel P2 until the first electrode is exposed, forming the first functional layer. The thickness of both the first and third functional layers along the first direction is 30 nm. After forming the first functional layer, the width of the isolation channel P2 is 90 μm, and the density of the first and third functional layers is 5.5 g / cm³. 3 ;

[0216] Step 6, Fabrication of the second functional layer: The third functional layer is masked using a mask, and then indium tin oxide (ITO) is deposited on the etched device surface using magnetron sputtering. The indium tin oxide in the isolation channel P2 constitutes the second functional layer. The thickness of the second functional layer along the first direction is 55 nm, and the sheet resistance of the second functional layer is 50 Ω / □. Then, the mask masking the third functional layer is removed.

[0217] Step 7, Fabrication of the second electrode: Place the device obtained in step 6 into a vacuum thermal evaporation equipment and evacuate to a vacuum level of 4*10. -4 Pa, heat-sinking copper is used as the second electrode, and the thickness of the second electrode is 80nm; then the above device is etched with a picosecond green laser to form an isolation channel P3 with a width of 15μm, the isolation channel P3 extends to the surface of the FTO layer, and the spacing between the isolation channel P3 and the isolation channel P2 is 20μm.

[0218] Step 8, edge cleaning and film lamination: The module prepared in step 8 is subjected to infrared edge cleaning, and then transparent EVA resin, crosslinking curing agent, antioxidant and silane coupling agent are blended and extruded to obtain a film. The film is laminated with the edge-cleaned device at 100°C to 110°C to obtain a solar cell module.

[0219] Solar cell module performance testing

[0220] (1) Photoelectric conversion efficiency (PCE) test

[0221] The photoelectric conversion efficiency was determined using the IV measurement method, and the specific steps are as follows:

[0222] a) Place the test fixture containing the sample cell (i.e. the perovskite solar cell module prepared in Example 1 above) on the sample holder, so that it is located in the measurement plane, and ensure that the sample cell is located at the center of the emitted light spot of the solar simulator (or the normal of the photovoltaic cell is parallel to the center line of the emitted beam of the solar simulator light source).

[0223] b) The solar simulator from Guangyan was used for testing in accordance with the national standard IEC61215. Specifically, crystalline silicon solar cells were used to correct the light intensity to achieve a solar intensity of AM 1.5, at 1000 W / m². 2 Under irradiance conditions, a mask is installed on the sample battery to be tested, and the temperature of the sample battery is controlled by a temperature monitoring device so that the temperature of the sample battery is maintained at (30±5℃) during the measurement process.

[0224] c) Set the scan direction, voltage range, scan interval voltage, and scan interval time. Specifically, the scan interval is 0.02V, and the interval between two adjacent points is 0.3s. Measure the forward and reverse scan current-voltage characteristics of the battery sample and record the maximum power point current V. m Maximum power point voltage V m Open-circuit voltage Voc and short-circuit current J SC .

[0225] Next, the photoelectric conversion efficiency is calculated using the following formula:

[0226] Photoelectric conversion efficiency PCE = P max / P in =J SC ·V OC ·FF / P in ;

[0227] Fill factor FF = J m ×V m / Voc×J SC ;

[0228] Among them, P max P is the maximum output power of the solar cell. in is the incident light power, and FF is the fill factor.

[0229] (2) Stability test

[0230] Photothermal accelerated aging test: Under conditions of 1 sun (one solar intensity) and 75°C, the time it takes for the efficiency of the solar cell module prepared in Example 1 to decay to 80% of its initial efficiency is tested.

[0231] (3) Sheet resistance test

[0232] The sheet resistance of the second functional layer was tested using the four-probe method, as follows: An RTS-9 dual-current four-probe tester was used. The test environment was: ambient temperature 23±2℃, 0.1MPa, and relative humidity ≤65%. During testing, the sample was cleaned and then placed horizontally on the test stage. The four probes were lowered to ensure good contact between the probes and the sample surface. The automatic test mode was then adjusted to calibrate the current range of the sample. The sheet resistance was measured under a suitable current range, and 8 to 10 data points from the same sample were collected for data measurement accuracy and error analysis. Finally, the average value was recorded as the sheet resistance value of the sample. The sheet resistance of the second functional layer in Example 1 measured by the above method was 50Ω / □.

[0233] (4) Density test

[0234] The density of the first functional layer was measured using X-ray reflectivity testing. Specifically, a high-brightness X-ray beam was provided by an X-ray source and reflected from the surface of the first functional layer at a very low incident angle. A Bruker D6 PHASER instrument could be used for the testing. The density of the first functional layer in Example 1, measured using the above method, was 5.5 g / cm³. 3 .

[0235] Example 2

[0236] The solar cell module was prepared using the same method as in Example 1, except that the prepared solar cell module further included a fourth functional layer. Specifically, in the preparation steps of the solar cell module, step 6 was performed according to the following scheme:

[0237] Step 6: Fabrication of the second and fourth functional layers: Indium tin oxide (ITO) is deposited on the device surface from Step 5 using magnetron sputtering. The ITO in the isolation channel P2 constitutes the second functional layer, and the ITO on the surface of the third functional layer constitutes the fourth functional layer. The thickness of both the second and fourth functional layers along the first direction is 55 nm, and the sheet resistance of both is 50 Ω / □.

[0238] Examples 3 to 9

[0239] The solar cell module was prepared using the same method as in Example 2, except that the composition of the first, second, third, and fourth functional layers in the solar cell module was adjusted according to Table 1 below. Wherein:

[0240] In Example 3, during the atomic deposition process, cyclopentadienyl indium (InCp) was used as the indium source, hydrogen peroxide was used as the oxygen source, the first functional layer was indium oxide, and the second and fourth functional layers were fluorine-doped tin oxide (FTO).

[0241] In Example 4, during the atomic deposition process, ZnMe2 was used as the zinc source, water as the oxygen source, the first functional layer was zinc oxide, and the second and fourth functional layers were indium-doped zinc oxide (IZO).

[0242] Example 5 uses Ti(NMe2)4 as the titanium source, water as the oxygen source, TiO2 as the first functional layer, and aluminum-doped zinc oxide (AZO) as the second and fourth functional layers.

[0243] Example 6 uses trimethylaluminum (TMA) as the aluminum source and water as the oxygen source. The first functional layer is aluminum oxide. During the preparation of the first functional layer, a mask is used to block and isolate the area outside the isolation channel P2. After the first functional layer is formed, a mask is used to block and isolate the channel P2. Zinc oxide is formed by atomic layer deposition using ZnMe2 as the zinc source and water as the oxygen source. The second and fourth functional layers are indium tin oxide (ITO).

[0244] Example 7 uses tetra(dimethylamino)zirconium (TDMAZ) as the zirconium source and ozone as the oxygen source. The first functional layer is zirconium oxide. During the preparation of the first functional layer, a mask is used to block and isolate the area outside the isolation channel P2. After the first functional layer is formed, a mask is used to block and isolate the channel P2. Ti(NMe2)4 is used as the titanium source and water is used as the oxygen source. Atomic layer deposition is used to form titanium oxide as the third functional layer. The second and fourth functional layers are boron-doped zinc oxide (BZO).

[0245] Example 8 uses tetrakis(dimethylamino)tin (TDMASn) as the tin source, water as the oxygen source, the first and third functional layers as tin oxide, and the second and fourth functional layers as metallic silver.

[0246] Example 9 uses tetratetra(dimethylamino)tin (TDMASn) as the tin source, water as the oxygen source, the first and third functional layers as tin oxide, and the second and fourth functional layers as copper-aluminum alloy.

[0247] Example 10

[0248] The solar cell module was prepared using the same method as in Example 1, except that the first functional layer of the solar cell module was Ga2O3, the atomic layer deposition used trimethylgallium (TMG) as the gallium source and ozone as the oxygen source, and the second functional layer was indium-doped tungsten oxide (IWO).

[0249] Comparative Example 1

[0250] The solar cell module was prepared using the same method as in Example 1, except that the prepared solar cell module did not include the first functional layer, the second functional layer, and the fourth functional layer. Specifically, in the preparation steps of the solar cell module, step 5 was performed according to the following scheme:

[0251] Step 5, fabrication of the third functional layer: Laser etching of the device obtained in step 4 forms an isolation channel P2 with a width of 150 μm, extending to the surface of the first electrode, and the spacing between isolation channel P2 and isolation channel P1 is 20 μm; then, SnO2 is deposited on the inner wall of the first electron transport layer and isolation channel P2 using atomic layer deposition technology. The SnO2 on the surface of the first electron transport layer constitutes the third functional layer, and the SnO2 on the inner wall of isolation channel P2 constitutes the first functional layer; the thickness of the first functional layer along the first direction and the thickness of the third functional layer are both 30 nm; after the formation of the first functional layer, the width of isolation channel P2 is 90 μm, and the density of both the first and third functional layers is 5.5 g / cm³. 3 ;

[0252] Comparative Example 2

[0253] The solar cell module was prepared using the same method as in Example 2, except that step 5 was omitted and the fourth functional layer was formed directly on the first electron transport layer.

[0254] Comparative Example 3

[0255] The solar cell module was prepared using the same method as in Example 1, except that steps 5 and 6 were omitted, and the second electrode was formed directly on the first electron transport layer.

[0256] Comparative Example 4

[0257] The solar cell module was prepared using the same method as in Example 2, except that in step 5, copper bath (BCP) was used as the first and third functional layers. The BCP was prepared by spin coating, with a thickness of 8 nm, a concentration of 5 mg / mL, isopropanol as the solvent, a spin coating speed of 4000 rpm, and a time of 30 s.

[0258] The solar cell modules prepared in Examples 2 to 10 and Comparative Examples 1 to 4 were tested using the same test method as in Example 1, and the results are shown in Table 1.

[0259] Table 1 below shows the relevant parameters of the solar cell modules in Examples 1 to 10 and Comparative Examples 1 to 4, and Table 2 below shows the performance test results of the solar cell modules in Examples 1 to 10 and Comparative Examples 1 to 4.

[0260] Table 1

[0261] Table 2

[0262] As can be seen from Tables 1 and 2, compared with Comparative Example 1 (with a first functional layer and SnO2 between the conductive connection structure and the first electrode), Comparative Example 2 (without a first and third functional layer), Comparative Example 3 (without a first, second, and third functional layer), and Comparative Example 4 (using BCP as the first and third functional layers), Examples 1 to 10 significantly improve the stability of solar cell modules by setting a first and second functional layer between the conductive connection structure and the first photoelectric conversion layer, setting a third functional layer between the first photoelectric conversion layer and the second electrode, and making the first functional layer a semiconductor material and / or an insulating material, the sheet resistance of the second functional layer less than or equal to 80 Ω / □, and the third functional layer an n-type semiconductor material.

[0263] Examples 11-13

[0264] The solar cell module was prepared using the same method as in Example 2, except that the single purging time of the inert gas between the tin source and the oxygen source in step 5 was adjusted according to Table 5 below, so that the density of the prepared first functional layer was adjusted according to Table 3 below.

[0265] Examples 14-16

[0266] The solar cell module was prepared using the same method as in Example 2, except that the first and third functional layers were In2O3, and the single purging time of the inert gas between the indium source and the oxygen source of In2O3 in step 5 was adjusted so that the density of the prepared first functional layer was adjusted according to Table 3 below.

[0267] Table 3 below shows the relevant parameters of the solar cell modules in Examples 11 to 16, and Table 4 below shows the performance test results of the solar cell modules in Examples 11 to 16.

[0268] Table 3

[0269] Table 4

[0270] As can be seen from Tables 3 and 4, by controlling the density of the first functional layer to 2.5 g / cm³, 3 ~8g / cm 3 This can significantly improve the stability of solar cell modules.

[0271] It should be noted that this disclosure is not limited to the above-described embodiments. The above embodiments are merely examples, and any embodiments with the same essential structure and achieving the same effect as the technical concept within the scope of this disclosure are included in the technical scope of this disclosure. Furthermore, various modifications that can be conceived by those skilled in the art to the embodiments, and other ways of constructing by combining some of the constituent elements of the embodiments, are also included in the scope of this disclosure without departing from the spirit of this disclosure.

Claims

1. A solar cell module, comprising: A plurality of battery cells arranged along a first direction, the battery cell including a first electrode, a second electrode arranged along a second direction, and a first photoelectric conversion layer and a third functional layer located between the first electrode and the second electrode, the third functional layer being disposed between the first photoelectric conversion layer and the second electrode, the first direction intersecting the second direction; A conductive connection structure is disposed between adjacent first and second battery cells in the plurality of battery cells, the conductive connection structure being used to connect the first electrode of the first battery cell and the second electrode of the second battery cell; Wherein, a first functional layer and a second functional layer are disposed between the conductive connection structure and the first photoelectric conversion layer along the first direction, and the second functional layer is disposed between the conductive connection structure and the first functional layer; The first functional layer includes semiconductor materials and / or insulating materials; The sheet resistance of the second functional layer is less than or equal to 80Ω / □; The third functional layer includes an n-type semiconductor material.

2. The solar cell module according to claim 1, wherein, The first functional layer extends along the second direction to the surface of the first electrode and extends along the first direction to at least a portion of the bottom of the second functional layer.

3. The solar cell module according to claim 1 or 2, wherein, The second functional layer extends along the second direction and is disposed between the conductive connection structure and the first electrode.

4. The solar cell module according to any one of claims 1 to 3, wherein, The first functional layer comprises n-type semiconductor oxide and / or insulating oxide.

5. The solar cell module according to claim 4, wherein, The n-type semiconductor oxide includes one or more of tin oxide, titanium oxide, zinc oxide, indium oxide, and gallium oxide; and / or, the insulating oxide includes one or more of aluminum oxide, zirconium oxide, and magnesium oxide.

6. The solar cell module according to any one of claims 1 to 5, wherein, The first functional layer includes tin oxide.

7. The solar cell module according to any one of claims 1 to 6, wherein, The density of the first functional layer is 2.5 g / cm³. 3 Up to 8g / cm 3 .

8. The solar cell module according to any one of claims 1 to 7, wherein, The density of the first functional layer is 4 g / cm³ 3 Up to 7g / cm 3 .

9. The solar cell module according to any one of claims 1 to 8, wherein, The second functional layer includes one or more of conductive oxides, metals, and alloys.

10. The solar cell module according to any one of claims 1 to 9, wherein, The second functional layer includes one or more of indium tin oxide, fluorine-doped tin oxide, indium-doped zinc oxide, aluminum-doped zinc oxide, boron-doped zinc oxide, antimony-doped tin oxide, and indium-doped tungsten oxide.

11. The solar cell module according to any one of claims 1 to 10, wherein, The thickness of the first functional layer along the first direction is 10 nm to 100 nm, and / or the thickness of the second functional layer along the first direction is 10 nm to 80 nm.

12. The solar cell module according to any one of claims 1 to 11, wherein, The third functional layer satisfies one or more of the following conditions: (1) The thickness of the third functional layer along the second direction is 10 nm to 100 nm; (2) The density of the third functional layer is 3 g / cm³. 3 Up to 8g / cm 3 Optionally, 4g / cm 3 Up to 7g / cm 3 ; (3) The third functional layer and the first functional layer are integrally formed; (4) The third functional layer includes one or more of tin oxide, titanium oxide, zinc oxide, indium oxide, and gallium oxide.

13. The solar cell module according to any one of claims 1 to 12, wherein the cell further comprises a fourth functional layer located between the third functional layer and the second electrode; the sheet resistance of the fourth functional layer is less than or equal to 80 Ω / □.

14. The solar cell module of claim 13, wherein the fourth functional layer satisfies one or more of the following conditions: (1) The fourth functional layer includes one or more of conductive oxides, metals, and alloys; (2) The thickness of the fourth functional layer along the second direction is 10 nm to 80 nm; (3) The fourth functional layer and the second functional layer are integrally formed.

15. The solar cell module according to any one of claims 1 to 14, wherein, The thickness of the first electrode is 10 nm to 800 nm, and / or the thickness of the second electrode is 10 nm to 150 nm.

16. The solar cell module according to any one of claims 1 to 15, wherein, The solar cell module also includes a first isolation structure; The first isolation structure is disposed between the first electrodes of adjacent first and second battery cells in the plurality of battery cells.

17. The solar cell module according to claim 16, wherein, The distance between the first isolation structure and the conductive connection structure along the first direction is 20 μm to 50 μm.

18. The solar cell module according to any one of claims 1 to 17, wherein, The solar cell module also includes a second isolation structure; The second isolation structure is disposed between the second electrodes of adjacent first and second battery cells in the plurality of battery cells.

19. The solar cell module according to claim 18, wherein, The distance between the second isolation structure and the conductive connection structure along the first direction is 10 μm to 40 μm.

20. The solar cell module according to any one of claims 1 to 19, wherein, The second electrode and the conductive connection structure are integrally formed.

21. The solar cell module according to any one of claims 1 to 20, wherein, The battery cell further includes: a first hole transport layer and / or a first electron transport layer; The first hole transport layer is disposed between the first electrode and the first photoelectric conversion layer, and the first electron transport layer is disposed between the first photoelectric conversion layer and the third functional layer.

22. The solar cell module according to claim 21, wherein, The battery cell further includes a second photoelectric conversion layer located between the first electron transport layer and the third functional layer, wherein the band gap of the second photoelectric conversion layer is different from that of the first photoelectric conversion layer.

23. The solar cell module according to claim 22, wherein, The conductive connection structure and the second photoelectric conversion layer are provided with the first functional layer and the second functional layer, and the second functional layer is provided between the conductive connection structure and the first functional layer.

24. The solar cell module according to claim 22 or 23, wherein, The battery cell further includes a connection layer, a second hole transport layer, a second photoelectric conversion layer, and a second electron transport layer, which are located between the first electron transport layer and the third functional layer and are arranged sequentially along the second direction.

25. The solar cell module according to any one of claims 22 to 24, wherein, The band gap of the first photoelectric conversion layer is larger than that of the second photoelectric conversion layer.

26. The solar cell module according to any one of claims 22 to 25, wherein, The first photoelectric conversion layer includes a perovskite light-absorbing layer; and / or, the second photoelectric conversion layer includes a perovskite light-absorbing layer.

27. The solar cell module according to claim 26, wherein, The perovskite light-absorbing layer comprises at least one of the compounds shown in [A][B][X]3 and [A]2[C][D][X]6. Wherein, A includes monovalent inorganic or organic cations, B includes divalent inorganic cations, C includes monovalent inorganic cations, D includes trivalent inorganic cations, and X includes monovalent anions.

28. The solar cell module according to claim 27, wherein, A includes CH3NH3 + CH(NH2)2 + Li + Na + K + 、Rb + Cs + One or more of the following; B includes Pb 2+ and / or Sn 2+ C includes Li + Na + K + 、Rb + Cs + One or more; X includes F - Cl - ,Br - I - SCN - CNO - OCN - OSCN - SH - OH - CN - SeCN - One or more of them.

29. The solar cell module according to any one of claims 22 to 28, wherein, The battery cell further includes a fifth functional layer located between the first photoelectric conversion layer and the connection layer; and / or, the battery cell further includes a sixth functional layer located between the first photoelectric conversion layer and the connection layer, wherein, if the fifth functional layer is included, the sixth functional layer is located between the fifth functional layer and the connection layer.

30. The solar cell module according to claim 29, wherein, The fifth functional layer includes an n-type semiconductor material; and / or, the sixth functional layer includes one or more of conductive oxides, metals, and alloys.

31. A method for preparing a solar cell module, comprising: A plurality of battery cells arranged along a first direction and a conductive connection structure are formed; each battery cell includes a first electrode, a second electrode, and a first photoelectric conversion layer and a third functional layer arranged along a second direction, the third functional layer being disposed between the first photoelectric conversion layer and the second electrode, the first direction intersecting the second direction; the conductive connection structure is disposed between adjacent first and second battery cells in the plurality of battery cells, the conductive connection structure being used to connect the first electrode of the first battery cell and the second electrode of the second battery cell; wherein, a first functional layer and a second functional layer are disposed between the conductive connection structure and the first photoelectric conversion layer, and the second functional layer is disposed between the conductive connection structure and the first functional layer; The first functional layer includes semiconductor materials and / or insulating materials; The sheet resistance of the second functional layer is less than or equal to 80Ω / □; The third functional layer includes an n-type semiconductor material.

32. The preparation method according to claim 31, wherein, Forming multiple battery cells arranged along a first direction and forming a conductive connection structure includes the following steps: A plurality of first electrodes are provided arranged sequentially along a first direction, and a first isolation structure is provided between adjacent first electrodes; A plurality of first photoelectric conversion layers are formed on the first electrode and the first isolation structure at intervals along a first direction; the isolation channel P2 between adjacent first photoelectric conversion layers exposes the first electrode; A first functional layer is formed on the surface of the first photoelectric conversion layer facing the isolation channel P2 and on a portion of the surface of the first electrode facing the isolation channel P2, and a third functional layer is formed on the surface of the first photoelectric conversion layer facing the second electrode; the third functional layer comprises an n-type semiconductor material. The second functional layer is formed on the surface of the first functional layer away from the first photoelectric conversion layer and the surface of the first functional layer away from the first electrode in the isolation channel P2; Multiple conductive structures are formed at intervals along the first direction on the surface of the third functional layer away from the first photoelectric conversion layer and within the isolation channel P2; wherein, the conductive structure located within the isolation channel P2 constitutes the conductive connection structure, and the conductive structure located on the surface of the third functional layer away from the first photoelectric conversion layer constitutes the second electrode; adjacent conductive structures are isolated by a second isolation structure.

33. The preparation method according to claim 32, wherein, The first functional layer is formed on the surface of the first photoelectric conversion layer facing the isolation channel P2 and on a portion of the surface of the first electrode facing the isolation channel P2, including: A first initial functional layer is formed on the inner wall of the isolation channel P2; A portion of the first initial functional layer in the middle of the surface of the first electrode facing the isolation channel P2 is removed to form the first functional layer located on the surface of the first photoelectric conversion layer facing the isolation channel P2 and a portion of the surface of the first electrode facing the isolation channel P2.

34. The preparation method according to claim 33, wherein, The first initial functional layer is formed by atomic layer deposition, and / or the second functional layer is formed by physical vapor deposition, and / or the third functional layer is formed by atomic layer deposition.

35. A photovoltaic module, comprising a solar cell module according to any one of claims 1 to 30, or comprising a solar cell module prepared by the preparation method according to any one of claims 31 to 34.

36. A power generation device comprising a solar cell module according to any one of claims 1 to 30, or comprising a solar cell module prepared by the preparation method according to any one of claims 31 to 34.

37. An electrical device comprising a solar cell module according to any one of claims 1 to 30, or comprising a solar cell module prepared by the preparation method according to any one of claims 31 to 34.

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