Continuous film forming apparatus

Abstract

Provided is a new continuous film forming apparatus that is highly convenient, useful, and reliable. This continuous film forming apparatus has a transfer chamber, a first film forming chamber, a second film forming chamber, and a third film forming chamber. The transfer chamber connects the first film forming chamber, the second film forming chamber, and the third film forming chamber. The first film forming chamber is provided with a first vapor deposition source. The second film forming chamber is provided with a second vapor deposition source. The third film forming chamber has the function for forming a film by using an ALD method. The second vapor deposition source emits a material with a larger angle with respect to the vertical direction of the film formation surface of a substrate as compared to the first vapor deposition source. Accordingly, for example, in a case where a material is emitted from the first vapor deposition source toward a substrate having a structure formed thereon, the range of a shadow formed on the substrate as a result of the material being blocked by the structure can be altered from the range of a shadow formed on the substrate as a result of the material emitted from the second vapor deposition source being blocked by the structure.

Description

Continuous film forming apparatus ,

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[0001] One aspect of the present invention relates to a continuous film forming apparatus or a semiconductor device.

[0002] Note that one aspect of the present invention is not limited to the above technical field. The technical field of one aspect of the invention disclosed in this specification and the like relates to an object, a method, or a manufacturing method. Or, one aspect of the present invention relates to a process, a machine, a manufacture, or a composition of matter. Therefore, more specifically, as the technical field of one aspect of the present invention disclosed in this specification, an information processing device, a semiconductor device, a storage device, a driving method thereof, or a manufacturing method thereof can be cited as an example.

[0003] Patent Document 1 describes a manufacturing apparatus capable of continuously performing a pattern forming process for a light emitting device and a light receiving device and a sealing process for preventing the surface and side surfaces of an organic layer from being exposed to the atmosphere. Using this manufacturing apparatus, a fine, high-brightness, and highly reliable light emitting device and light receiving device can be formed. Further, the manufacturing apparatus can be incorporated into an inline-type manufacturing apparatus in which the apparatuses are arranged in the process order of the light emitting device and the light receiving device, and manufacturing can be performed with high throughput.

[0004] Japanese Patent Application Laid-Open No. 2023-21074

[0005] One aspect of the present invention has an object of providing a novel continuous film forming apparatus excellent in convenience, usefulness, or reliability. Or, one object is to provide a novel semiconductor device.

[0006] Note that the description of these problems does not prevent the existence of other problems. Note that one aspect of the present invention does not need to solve all of these problems. Note that other problems will become apparent from the description of the specification, drawings, claims, etc., and it is possible to extract these other problems from the description of the specification, drawings, claims, etc.

[0007] (1) One aspect of the present invention is a continuous film forming apparatus having a transfer chamber, a first film forming chamber, a second film forming chamber, and a third film forming chamber.

[0008] The transport chamber is connected to a first deposition chamber, a second deposition chamber, and a third deposition chamber. The first deposition chamber is equipped with a first evaporation source, the second deposition chamber is equipped with a second evaporation source, and the third deposition chamber is equipped with the function of depositing films using the atomic layer deposition (ALD) method.

[0009] The second deposition source ejects the material at a larger angle with respect to the perpendicular direction of the film-forming surface of the substrate compared to the first deposition source.

[0010] (2) Another aspect of the present invention is a continuous film deposition apparatus in which the second deposition source is mounted at multiple angles with respect to the perpendicular direction of the film deposition surface of the substrate.

[0011] This makes it possible to differentiate the area of ​​shadow formed on the substrate by the material ejected from the first deposition source being blocked by the structure, and the area of ​​shadow formed on the substrate by the material ejected from the second deposition source being blocked by the structure. As a result, a novel continuous film deposition apparatus with superior convenience, usefulness, and reliability can be provided.

[0012] (3) Another aspect of the present invention is a continuous film deposition apparatus in which a first film deposition chamber has the function of forming a first layer from a first evaporation source, and a second film deposition chamber has the function of forming a second layer from a second evaporation source. A third film deposition chamber has the function of forming a protective layer that covers the first and second layers.

[0013] This allows, for example, the formation of a first layer on a substrate on which a structure is formed, and the formation of a second layer in a region different from the region on which the first layer is formed. Furthermore, for example, a second layer with a larger area than the first layer can be formed on the side surface of a reverse-tapered structure. Also, for example, a protective layer can be formed on the side and top surface of a reverse-tapered structure. Furthermore, for example, a protective layer can be formed to cover the first and second layers formed on the substrate on which the structure is formed. Also, for example, the first and second layers can be formed continuously without exposure to the atmosphere. Furthermore, for example, the first and second layers can be protected from the atmosphere using a protective layer. Also, for example, a first layer containing a light-emitting material can be formed, and a second layer containing an electron-injectable material can be formed in a region different from the region on which the first layer is formed. Furthermore, for example, the first layer containing the light-emitting material and the second layer containing the electron-injectable material can be formed continuously without exposure to the atmosphere. As a result, it is possible to provide a novel continuous film deposition apparatus that is superior in convenience, usefulness, and reliability.

[0014] (4) Another aspect of the present invention is a continuous film deposition apparatus described above, wherein the first film deposition chamber comprises a substrate support section and a scanning mechanism section, and the substrate support section has the function of supporting the substrate.

[0015] The scanning mechanism has the function of moving the first deposition source along the surface of the substrate supported by the substrate support, while maintaining a constant distance between the surface of the substrate to be deposited and the first deposition source.

[0016] (5) Another aspect of the present invention is a continuous film deposition apparatus described above, wherein the first film deposition chamber comprises a substrate support section and a scanning mechanism section, and the substrate support section has the function of supporting the substrate.

[0017] The scanning mechanism has the function of moving the substrate support while maintaining a constant distance between the film-depositing surface of the substrate supported by the substrate support and the first deposition source.

[0018] This makes it possible to suppress the phenomenon where the angle of the direction in which the first deposition source ejects the material differs from the angle of the direction of the direction of the film-deposited surface located at the edge of the substrate compared to the angle of the direction of the direction of the film-deposited surface located at the center of the substrate. It also makes it possible to suppress the phenomenon where the direction in which the material is ejected varies within the film-deposited surface of the substrate Sub. Furthermore, it makes it possible to achieve a uniform film thickness. As a result, a novel continuous film deposition apparatus with superior convenience, usefulness, and reliability can be provided.

[0019] One aspect of the present invention can provide a novel continuous film deposition apparatus that is superior in convenience, usefulness, or reliability. Alternatively, it can provide a novel semiconductor device.

[0020] Furthermore, the description of these effects does not preclude the existence of other effects. Moreover, one aspect of the present invention does not necessarily have to possess all of these effects. Other effects will naturally become apparent from the description in the specification, drawings, and claims, and it is possible to extract other effects from the description in the specification, drawings, and claims.

[0021] Figure 1 is a diagram illustrating the configuration of a continuous film deposition apparatus according to an embodiment. Figures 2A and 2B are diagrams illustrating the configuration of a film deposition chamber according to an embodiment. Figure 3 is a diagram illustrating the configuration of a film deposition chamber according to an embodiment. Figure 4 is a diagram illustrating the configuration of a film deposition chamber according to an embodiment. Figure 5 is a diagram illustrating the configuration of a film deposition chamber according to an embodiment. Figures 6A, 6B, and 6C are diagrams illustrating the configuration of a film formed using the continuous film deposition apparatus according to an embodiment. Figures 7A and 7B are diagrams illustrating the configuration of a film formed using the continuous film deposition apparatus according to an embodiment. Figures 8A and 8B are diagrams illustrating the configuration of a film deposition chamber according to an embodiment. Figures 9A and 9B are diagrams illustrating the configuration of a film deposition chamber according to an embodiment. Figure 10 is a diagram illustrating the configuration of a vapor deposition source according to an embodiment. Figures 11A, 11B, and 11C are diagrams illustrating the configuration of a vapor deposition source according to an embodiment. Figures 12A and 12B are diagrams illustrating the configuration of a display device according to an embodiment. Figure 13A is a diagram illustrating the configuration of the light-emitting device of the display device according to the embodiment, and Figures 13B and 13C are diagrams illustrating the shape of the inversely tapered structure used in the display device according to the embodiment. Figure 14 is a diagram illustrating the manufacturing process of the display device according to the embodiment. Figure 15 is a diagram illustrating the manufacturing process of the display device according to the embodiment. Figure 16 is a diagram illustrating the manufacturing process of the display device according to the embodiment. Figure 17 is a diagram illustrating the manufacturing process of the display device according to the embodiment. Figure 18 is a diagram illustrating the manufacturing process of the display device according to the embodiment. Figure 19 is a diagram illustrating the manufacturing process of the display device according to the embodiment. Figure 20 is a diagram illustrating the manufacturing process of the display device according to the embodiment. Figure 21 is a diagram illustrating the manufacturing process of the display device according to the embodiment. Figure 22 is a diagram illustrating the manufacturing process of the display device according to the embodiment. Figure 23 is a diagram illustrating the manufacturing process of the display device according to the embodiment. Figure 24 is a diagram illustrating the manufacturing process of the display device according to the embodiment. Figure 25 is a diagram illustrating the manufacturing process of the display device according to the embodiment.

[0022] A continuous film deposition apparatus according to one aspect of the present invention comprises a transport chamber, a first film deposition chamber, a second film deposition chamber, and a third film deposition chamber. The transport chamber connects the first, second, and third film deposition chambers. The first film deposition chamber is equipped with a first vapor deposition source, the second film deposition chamber is equipped with a second vapor deposition source, and the third film deposition chamber is equipped with a function for film deposition using the ALD method. Furthermore, the second vapor deposition source ejects the material at a larger angle with respect to the perpendicular direction of the film deposition surface of the substrate compared to the first vapor deposition source.

[0023] This makes it possible to differentiate the area of ​​shadow formed on the substrate by the material ejected from the first deposition source being blocked by the structure, and the area of ​​shadow formed on the substrate by the material ejected from the second deposition source being blocked by the structure. As a result, a novel continuous film deposition apparatus with superior convenience, usefulness, and reliability can be provided.

[0024] Embodiments will be described in detail with reference to the drawings. However, it will be readily apparent to those skilled in the art that the present invention is not limited to the following description, and that its form and details can be modified in various ways without departing from the spirit and scope of the present invention. Accordingly, the present invention is not to be interpreted as being limited to the contents of the embodiments shown below. In the configuration of the invention described below, the same reference numerals are used in common across different drawings for the same parts or parts having similar functions, and repeated descriptions are omitted.

[0025] In the drawings attached to this specification, components are classified by function and shown as independent blocks in block diagrams. However, in reality, it is difficult to completely separate components by function, and a single component may be involved in multiple functions.

[0026] (Embodiment 1) In this embodiment, a continuous film deposition apparatus according to one aspect of the present invention will be described with reference to Figures 1 to 11.

[0027] Figure 1 is a diagram illustrating the configuration of a continuous film deposition apparatus according to one embodiment of the present invention.

[0028] Figure 2A is a perspective view illustrating the configuration of a film deposition chamber that can be used in a continuous film deposition apparatus according to one embodiment of the present invention, and Figure 2B is a top view of the film deposition chamber shown in Figure 2A.

[0029] Figure 3 is a cross-sectional view illustrating the configuration of a film deposition chamber that can be used in a continuous film deposition apparatus according to one embodiment of the present invention.

[0030] Figures 4 and 5 are cross-sectional views illustrating the configuration of a deposition chamber different from the one shown in Figure 3.

[0031] Figures 6A and 6B are cross-sectional views illustrating the structure of a film that can be formed using a continuous film deposition apparatus according to one embodiment of the present invention, and Figure 6C is a diagram illustrating a part of Figure 6B.

[0032] Figures 7A and 7B are cross-sectional views illustrating the structure of a film that can be formed using a continuous film deposition apparatus according to one embodiment of the present invention.

[0033] Figure 8A is a perspective view illustrating the configuration of a film deposition chamber that can be used in a continuous film deposition apparatus according to one embodiment of the present invention, and Figure 8B is a top view of the film deposition chamber shown in Figure 8A.

[0034] Figure 9A is a perspective view illustrating the configuration of a film deposition chamber that can be used in a continuous film deposition apparatus according to one embodiment of the present invention, and Figure 9B is a cross-sectional view of the film deposition chamber shown in Figure 9A.

[0035] Figure 10 is a perspective view illustrating the configuration of the deposition source in a deposition chamber that can be used in a continuous film deposition apparatus according to one embodiment of the present invention.

[0036] Figure 11A is a top view illustrating the configuration of the deposition source in a deposition chamber that can be used in a continuous film deposition apparatus according to one embodiment of the present invention, and Figure 11B is a cross-sectional view illustrating the configuration of the deposition source. Figure 11C is a diagram schematically illustrating the behavior of the deposition material in the deposition source.

[0037] <Example of Continuous Film Deposition Apparatus Configuration 1> The continuous film deposition apparatus CX according to one embodiment of the present invention described in this embodiment has a transport chamber TRX and film deposition chambers CX-1, CX-2, CX-3, CX-4, CX-5, and CX-6 (see Figure 1). The continuous film deposition apparatus CX also has a substrate loading / unloading device CX-L and a pre-processing chamber CX-Pt. The continuous film deposition apparatus CX is connected to a vacuum exhaust device.

[0038] <Example of the configuration of the transport chamber TRX> The transport chamber TRX connects the deposition chambers CX-1, CX-2, CX-3, CX-4, CX-5, and CX-6. The transport chamber TRX also connects the substrate loading / unloading device CX-L and the pre-processing chamber CX-Pt.

[0039] The transport chamber TRX is equipped with a substrate transport device. The substrate transport device has the function of transporting substrates (Sub) from one of the substrate loading / unloading devices CX-L, the pre-processing chamber CX-Pt, the deposition chambers CX-1, CX-2, CX-3, CX-4, CX-5, and CX-6 to the other.

[0040] <Example of configuration of substrate loading / unloading device CX-L> The substrate loading / unloading device CX-L has the function of loading substrates Sub into the continuous film deposition apparatus CX and the function of unloading substrates Sub from the continuous film deposition apparatus CX.

[0041] <Example of configuration of pre-treatment chamber CX-Pt> The pre-treatment chamber CX-Pt has the function of pre-treating the substrate Sub before film deposition. The pre-treatment chamber CX-Pt is equipped with, for example, a heating device. This makes it possible to remove, for example, water adsorbed on the substrate Sub from the substrate Sub.

[0042] <Example Configuration of Film Deposition Chamber CX-1> Film Deposition Chamber CX-1 has the function of depositing a deposition material onto a substrate Sub to form a film. Film Deposition Chamber CX-1 is equipped with a deposition source that can heat the deposition material. The heated deposition material, for example, a hole injection material and a hole transport material, is ejected from the deposition source, and a deposited film is formed on the film-depositing surface of the substrate Sub. This makes it possible to form, for example, a hole injection layer and a hole transport layer on an anode that has been previously formed on the substrate Sub.

[0043] <Configuration Example of Film Formation Chamber CX-2> The film formation chamber CX-2 has a function of depositing a deposition material on a substrate Sub to form a film. The film formation chamber CX-2 includes a deposition source and can heat the deposition material. The heated deposition material, for example, a light-emitting material, is ejected from the deposition source, and a deposited film is formed on the film-forming surface of the substrate Sub. Thereby, for example, a light-emitting layer can be formed on the substrate Sub.

[0044] <Configuration Example 1 of Film Formation Chamber CX-3> The film formation chamber CX-3 has a function of depositing a deposition material on a substrate Sub to form a film (see Fig. 2A). Note that the configuration of the film formation chamber CX-3 described in the present embodiment can be applied to the configurations of the film formation chambers CX-1, CX-2, and CX-4.

[0045] The film formation chamber CX-3 includes a deposition source CX-3EvS and can heat the deposition material. The heated deposition material, for example, a light-emitting material, is ejected from the deposition source, and a deposited film is formed on the film-forming surface of the substrate Sub. Thereby, for example, a light-emitting layer that emits light of a color different from that of the light-emitting layer formed in the film formation chamber CX-2 can be formed on the substrate Sub.

[0046] The film formation chamber CX-3 includes a substrate support portion CX-3SSU and a scanning mechanism portion CX-3ScU (see Figs. 2B and 3). The substrate support portion CX-3SSU has a function of supporting the substrate Sub. Further, the scanning mechanism portion CX-3ScU has a function of moving the deposition source CX-3EvS along the film-forming surface of the substrate Sub supported by the substrate support portion CX-3SSU while keeping the distance between the film-forming surface of the substrate Sub supported by the substrate support portion CX-3SSU and the deposition source CX-3EvS constant. Note that the deposition source CX-3EvS has a shape in which the length in the direction orthogonal to the direction in which the scanning mechanism portion CX-3ScU moves the deposition source CX-3EvS is longer than the length in the direction in which the scanning mechanism portion CX-3ScU moves the deposition source CX-3EvS. Specifically, when the scanning mechanism portion CX-3ScU moves the deposition source CX-3EvS in the X-axis direction in Fig. 2B, the deposition source CX-3EvS has a shape in which the length in the Y-axis direction orthogonal to the X-axis direction is longer than the length in the X-axis direction. Further, the size of the deposited film that can be formed by the deposition source CX-3EvS is determined by the movable range of the deposition source CX-3EvS in the X-axis direction and the length of the deposition source CX-3EvS in the Y-axis direction.

[0047] This can suppress the occurrence of a phenomenon in which the angle of the deposition surface of the substrate Sub located at the end of the substrate Sub in the direction in which the evaporation source CX-3EvS ejects the material with respect to the vertical direction of the deposition surface is different from the angle with respect to the vertical direction of the deposition surface located at the center of the substrate Sub. In addition, the occurrence of a phenomenon in which the direction in which the material is ejected varies within the deposition surface of the substrate Sub can be suppressed. Further, the film thickness can be made uniform. As a result, a novel continuous film forming apparatus excellent in convenience, usefulness or reliability can be provided.

[0048] <Configuration Example 2 of Film Forming Chamber CX-3> Different from the configuration in which the substrate support portion CX-3SSU horizontally supports the substrate Sub (see FIG. 2A), a configuration in which the substrate support portion CX-3SSU vertically supports the substrate Sub can be used in the film forming chamber CX-3 (see FIG. 8A). In other words, a configuration in which the deposition surface of the substrate Sub is inclined and supported at an angle greater than 45° and less than 135° with respect to the horizontal plane can be used in the film forming chamber CX-3.

[0049] The film forming chamber CX-3 includes a substrate support portion CX-3SSU and a scanning mechanism portion CX-3ScU (see FIG. 8B). The substrate support portion CX-3SSU has a function of vertically supporting the substrate Sub. Further, the scanning mechanism portion CX-3ScU has a function of moving the evaporation source CX-3EvS along the deposition surface of the substrate Sub supported by the substrate support portion CX-3SSU while keeping the distance between the deposition surface of the substrate Sub supported by the substrate support portion CX-3SSU and the evaporation source CX-3EvS constant. When the scanning mechanism portion CX-3ScU moves the evaporation source CX-3EvS in the X-axis direction in FIG. 8A, the evaporation source CX-3EvS has a shape in which the length in the Z-axis direction orthogonal to the X-axis direction is longer than the length in the X-axis direction. Further, the size of the deposition film that can be formed by the evaporation source CX-3EvS is determined by the movable range of the evaporation source CX-3EvS in the X-axis direction and the length of the evaporation source CX-3EvS in the Z-axis direction. [[ID=⑨]] [[ID=⑩]]

[0050] This makes it possible to suppress the phenomenon where the angle of the direction in which the deposition source CX-3EvS ejects the material differs from the angle of the angle of the direction of the deposition surface located at the edge of the substrate Sub relative to the perpendicular direction, and also suppresses the phenomenon where the direction from which the material is ejected varies within the deposition surface of the substrate Sub. Furthermore, it is possible to make the film thickness uniform. As a result, a novel continuous film deposition apparatus with superior convenience, usefulness, and reliability can be provided.

[0051] <Example 3 of the film deposition chamber CX-3 configuration> Unlike the configuration in which the scanning mechanism CX-3ScU moves the deposition source CX-3EvS (see Figures 2A and 8A), a configuration in which the scanning mechanism CX-3ScU moves the substrate support CX-3SSU can be used in the film deposition chamber CX-3 (see Figure 9A).

[0052] The deposition chamber CX-3 comprises a substrate support section CX-3SSU and a scanning mechanism section CX-3ScU (see Figure 9B). The substrate support section CX-3SSU has the function of supporting the substrate Sub. The scanning mechanism section CX-3ScU has the function of moving the substrate support section CX-3SSU while maintaining a constant distance between the film deposition surface of the substrate Sub supported by the substrate support section CX-3SSU and the evaporation source CX-3EvS. The evaporation source CX-3EvS has a shape in which the length in the direction perpendicular to the direction in which the scanning mechanism section CX-3ScU moves the substrate support section CX-3SSU is longer than the length in the direction in which the scanning mechanism section CX-3ScU moves the substrate support section CX-3SSU. Specifically, when the scanning mechanism section CX-3ScU moves the substrate support section CX-3SSU in the X-axis direction in the figure, the evaporation source CX-3EvS has a shape in which the length in the Y-axis direction perpendicular to the X-axis direction is longer than the length in the X-axis direction. Furthermore, the size of the vapor-deposited film that can be formed by the vapor deposition source CX-3EvS is determined by the movable range of the substrate support CX-3SSU in the X-axis direction and the length of the vapor deposition source CX-3EvS in the Y-axis direction.

[0053] This makes it possible to suppress the phenomenon where the angle of the direction in which the deposition source CX-3EvS ejects the material differs from the angle of the angle of the direction of the deposition surface located at the edge of the substrate Sub relative to the perpendicular direction, and also suppresses the phenomenon where the direction from which the material is ejected varies within the deposition surface of the substrate Sub. Furthermore, it is possible to make the film thickness uniform. As a result, a novel continuous film deposition apparatus with superior convenience, usefulness, and reliability can be provided.

[0054] 《Example Configuration of Evaporation Source CX-3EvS》 The evaporation source CX-3EvS includes an evaporation material crucible CrDM and a gas inlet GI (see Figure 10). The evaporation source CX-3EvS also includes a limiting plate LimB (see Figure 11A). The evaporation material crucible CrDM is located between the gas inlet GI and the limiting plate LimB, and the evaporation material crucible CrDM holds the evaporation material.

[0055] For example, when the scanning mechanism CX-3ScU moves the deposition source CX-3EvS in the X-axis direction in Figure 10, the deposition source CX-3EvS is equipped with deposition material crucibles CrDM arranged in the Z-axis direction (see Figure 11B). The deposition source CX-3EvS is also equipped with gas inlets GI arranged in the same direction as the deposition material crucibles CrDM are arranged.

[0056] Furthermore, the deposition source CX-3EvS has a built-in heater, which has the function of raising the temperature of the entire deposition source CX-3EvS. The deposition material held in the deposition material crucible CrDM is heated and sublimes or evaporates. The heated deposition material passes through the gap in the limiting plate LimB and is ejected toward the film-forming surface of the substrate Sub.

[0057] The limiting plate LimB has the function of restricting the direction in which the deposition material DM is ejected. In addition, a gas GM that is chemically inert to the deposition material DM can be introduced through the gas inlet GI. This allows the deposition material DM to be ejected toward the film-forming surface of the substrate Sub (see Figure 11C).

[0058] <Example Configuration of Film Deposition Chamber CX-4> Film Deposition Chamber CX-4 has the function of depositing a deposition material onto a substrate Sub to form a film (see Figure 1). Film Deposition Chamber CX-4 is equipped with a deposition source that can heat the deposition material. The heated deposition material, for example, an electron transport material, is ejected from the deposition source, and a deposited film is formed on the film-depositing surface of the substrate Sub. This makes it possible to form, for example, a part of an electron transport layer or a charge generation layer on the substrate Sub.

[0059] <Example of Configuration of Film Deposition Chamber CX-5 1> Film Deposition Chamber CX-5 has the function of depositing a deposition material onto a substrate Sub to form a film (see Figure 4). Film Deposition Chamber CX-5 is equipped with a deposition source CX-5EvS that can heat the deposition material. The heated deposition material, for example, an electron-injection material or a conductive material, is ejected from the deposition source, and a deposited film is formed on the film-depositing surface of the substrate Sub. This makes it possible to form, for example, an electron-injection layer or a cathode on the substrate Sub.

[0060] Furthermore, the deposition source CX-5EvS ejects the material at a larger angle θ with respect to the perpendicular direction of the film-forming surface of the substrate Sub, compared to the deposition source CX-3EvS (see Figures 3 and 4).

[0061] <Example 2 of the configuration of the film deposition chamber CX-5> The deposition source CX-5EvS is mounted at multiple angles θ with respect to the perpendicular direction of the film deposition surface of the substrate Sub (see Figures 4 and 5). For example, the deposition source CX-5EvS shown in Figure 5 has a larger angle θ with respect to the perpendicular direction of the film deposition surface of the substrate Sub compared to the deposition source CX-5EvS shown in Figure 4. Note that, for example, users of the continuous film deposition apparatus can set multiple angles θ as appropriate.

[0062] This makes it possible to differentiate the area of ​​shadow formed on the substrate Sub by blocking the material ejected from the deposition source CX-3EvS towards the substrate Sub on which the structure 529Sp is formed, and the area of ​​shadow formed on the substrate Sub by blocking the material ejected from the deposition source CX-5EvS. As a result, a novel continuous film deposition apparatus with superior convenience, usefulness, and reliability can be provided.

[0063] <Example Configuration of Film Deposition Chamber CX-6> Film Deposition Chamber CX-6 is equipped with the function of depositing films using the ALD method. For example, Film Deposition Chamber CX-6 is connected to an inert gas and raw material supply device and a vacuum pump. It is also equipped with a high-speed valve that precisely controls the period for supplying the precursor, the period for discharging excess precursor, the period for supplying the oxidizing agent, and the period for discharging excess reaction products. Specifically, a film containing aluminum and oxygen can be formed on a substrate Sub using an aluminum-containing precursor and an oxidizing agent.

[0064] <Example of Continuous Film Deposition Apparatus Configuration 2> The film deposition chamber CX-3 of the continuous film deposition apparatus CX according to one aspect of the present invention described in this embodiment has the function of ejecting a deposition material from the deposition source CX-3EvS and forming a layer L1 on the film deposition surface of the substrate Sub (see Figure 6A).

[0065] Furthermore, if a structure 529Sp is formed on the film-depositing surface of the substrate Sub, the material CX-3EvM ejected from the evaporation source CX-3EvS is blocked by the structure 529Sp, and a shadow is formed on the substrate Sub. Since the evaporation source CX-3EvS ejects the material perpendicular to the film-depositing surface of the substrate Sub, for example, if the structure 529Sp has an inverse taper shape with respect to the substrate Sub, the shadow is formed around the portion of the structure 529Sp that is in contact with the substrate Sub. Also, layer L1 is not formed in the shadowed area (see Figure 6C).

[0066] Furthermore, the deposition chamber CX-5 of the continuous film deposition apparatus CX according to one embodiment of the present invention has the function of ejecting deposition material from the deposition source CX-5EvS and forming a layer L2 on the film deposition surface of the substrate Sub (see Figures 6B and 6C).

[0067] Furthermore, if a structure 529Sp is formed on the film-depositing surface of the substrate Sub, the material ejected from the evaporation source CX-5EvS is blocked by the structure 529Sp, and a shadow is formed on the substrate Sub. Since the evaporation source CX-5EvS ejects the material at an angle θ with respect to the perpendicular direction of the film-depositing surface of the substrate Sub, for example, if the structure 529Sp has an inverse taper shape with respect to the substrate Sub, the shadow is formed in a different area from the shadow formed in the deposition chamber CX-3. Also, layer L2 is not formed in the area of ​​the shadow formed in the deposition chamber CX-5 (see Figure 6C). However, layer L2 is formed on a part of the side surface of the structure 529Sp. When a vapor-deposited film is formed on a substrate Sub on which a structure 529Sp is formed using a continuous film deposition apparatus according to one embodiment of the present invention, it is possible to create areas on the substrate Sub where a vapor-deposited film is formed and areas where it is not formed without using a shadow mask (also called a metal mask). Furthermore, by utilizing the structure 529Sp on the substrate Sub and multiple deposition sources that eject material in different directions, shadows can be formed at different locations on the substrate Sub without using a shadow mask (also called a metal mask).

[0068] Furthermore, for example, if a structure 529Sp is formed from a conductive material and the conductive material is ejected from the deposition source CX-5EvS, the conductive structure 529Sp and the conductive layer L2 can be connected.

[0069] Furthermore, the deposition chamber CX-6 of the continuous film deposition apparatus CX according to one embodiment of the present invention has the function of forming a protective layer L3 that covers layers L1 and L2 (see Figures 7A and 7B). Even when a structure 529Sp is formed on the substrate Sub, the deposition chamber CX-6 has the function of forming a film using the ALD method, so that a film that grows isotropically in thickness can be formed on the surface to be deposited. In other words, the layer L3 that can be formed in the deposition chamber CX-6 can cover not only layers L1 and L2 formed on the substrate Sub, but also the side surface of the structure 529Sp where layer L2 is not formed. In addition, the protective layer L3 formed using the ALD method has few pinholes.

[0070] This allows, for example, a layer L1 to be formed on a substrate Sub on which a structure 529Sp is formed, and a layer L2 to be formed in a region different from the region on which layer L1 is formed. Furthermore, for example, a layer L2 with a larger area than layer L1 can be formed on the side surface of a reverse-tapered structure 529Sp. Also, for example, a protective layer L3 can be formed on the side and front surface of a reverse-tapered structure 529Sp. Furthermore, for example, a protective layer L3 can be formed to cover layers L1 and L2 formed on the substrate Sub on which the structure 529Sp is formed. Also, for example, layers L1 and L2 can be formed continuously without exposure to the atmosphere. Furthermore, for example, layers L1 and L2 can be protected from the atmosphere using the protective layer L3. Also, for example, a layer L1 containing a light-emitting material can be formed, and a layer L2 containing an electron-injection material can be formed in a region different from the region on which layer L1 is formed. Furthermore, for example, layer L1 containing a light-emitting material and layer L2 containing an electron-injection material can be formed continuously without exposure to the atmosphere. As a result, it is possible to provide a novel continuous film deposition apparatus that is superior in convenience, usefulness, and reliability.

[0071] This embodiment can be appropriately combined with other embodiments shown in this specification.

[0072] (Embodiment 2) In this embodiment, a method for manufacturing a display device using a continuous film deposition apparatus according to one aspect of the present invention will be described with reference to Figures 12 to 25.

[0073] Figure 12 illustrates the configuration of a display device that can be manufactured using a continuous film deposition apparatus according to one embodiment of the present invention.

[0074] Figure 13A is a diagram illustrating the configuration of a light-emitting device that can be manufactured using a continuous film deposition apparatus according to one embodiment of the present invention. Figures 13B and 13C are diagrams illustrating the shape of an inverted tapered structure provided on a substrate that is fed into the continuous film deposition apparatus according to one embodiment of the present invention.

[0075] Figures 14 to 25 are cross-sectional views illustrating the process of manufacturing a light-emitting device using a continuous film deposition apparatus according to one embodiment of the present invention.

[0076] <Example of Display Device Configuration> Figure 12A shows the configuration of a display device 400B that can be manufactured using a continuous film deposition apparatus CX according to one embodiment of the present invention.

[0077] [Display Device 400B] Figure 12A shows a cross-sectional view of the display device 400B. Figure 12A shows an example of a cross-section when a part of the area including the FPC 472, a part of the circuit 464, and a part of the display unit 462 of the display device 400B are cut. In Figure 12A, an example of a cross-section is shown when a part of the display unit 462, in particular, including the light-emitting element 430b that emits green light and the light-emitting element 430c that emits blue light, is cut.

[0078] The display device 400B shown in Figure 12A has transistors 202, 210, light-emitting elements 430b, and 430c between substrates 453 and 454.

[0079] The substrate 454 and the protective layer 416 are bonded together via an adhesive layer 442. The adhesive layer 442 is provided overlapping with the light-emitting elements 430b and 430c, respectively, and a solid encapsulation structure is applied to the display device 400B. In the region 228 near the edge of the display device 400B, it is preferable that the protective layer 416 is in contact with the insulating layer 215 through an opening provided in the insulating layer 214. In particular, it is preferable that the inorganic insulating film of the insulating layer 215 and the inorganic insulating film of the protective layer 416 are in contact with each other. This makes it possible to suppress impurities from entering the display unit 462 from the outside via the organic insulating film. Therefore, the reliability of the display device 400B can be improved.

[0080] The substrate 453 and the insulating layer 212 are bonded together by an adhesive layer 455.

[0081] The method for manufacturing the display device 400B involves first bonding a fabricated substrate, on which an insulating layer 212, transistors, and light-emitting elements are provided, to a substrate 454 on which a light-shielding layer 417 is provided, using an adhesive layer 442. Then, the fabricated substrate is peeled off and a substrate 453 is attached to the exposed surface, thereby transferring the components formed on the fabricated substrate to the substrate 453. It is preferable that both the substrate 453 and the substrate 454 are flexible. This increases the flexibility of the display device 400B.

[0082] The insulating layer 212 can be made of an inorganic insulating film that can be used for the insulating layer 211 and the insulating layer 215, respectively.

[0083] The pixel electrodes are connected to the conductive layer 222b of the transistor 210 through an opening in the insulating layer 214. The conductive layer 222b is connected to the low-resistance region 231n through openings in the insulating layers 215 and 225. The transistor 210 has the function of controlling the driving of the light-emitting element.

[0084] The ends of the pixel electrodes are covered by an insulating layer 421. A partition wall 420 is provided on the insulating layer 421. On the partition wall 420, a layer is provided which includes a portion of the upper electrodes of two adjacent light-emitting elements on either side of the partition wall 420, and the same material as the EL layer.

[0085] The light emitted by the light-emitting elements 430b and 430c is emitted towards the substrate 454. It is preferable to use a material with high transparency to visible light for the substrate 454.

[0086] A connection portion 204 is provided in the region of substrate 453 that does not overlap with substrate 454. At the connection portion 204, wiring 465 is electrically connected to FPC 472 via a conductive layer 466 and a connecting layer 242. The conductive layer 466 can be obtained by processing the same conductive film as the pixel electrode. This allows the connection portion 204 and FPC 472 to be electrically connected via the connecting layer 242.

[0087] Transistors 202 and 210 each have a conductive layer 221 that functions as a gate, an insulating layer 211 that functions as a gate insulating layer, a semiconductor layer having a channel forming region 231i and a pair of low-resistance regions 231n, a conductive layer 222a connected to one of the pair of low-resistance regions 231n, a conductive layer 222b connected to the other of the pair of low-resistance regions 231n, an insulating layer 225 that functions as a gate insulating layer, a conductive layer 223 that functions as a gate, and an insulating layer 215 covering the conductive layer 223. The insulating layer 211 is located between the conductive layer 221 and the channel forming region 231i. The insulating layer 225 is located between the conductive layer 223 and the channel forming region 231i.

[0088] The conductive layer 222a and the conductive layer 222b are each connected to the low-resistance region 231n via openings provided in the insulating layer 215. Of the conductive layer 222a and the conductive layer 222b, one functions as a source and the other functions as a drain.

[0089] Figure 12A shows an example in which the insulating layer 225 covers the top and sides of the semiconductor layer. The conductive layer 222a and the conductive layer 222b are connected to the low-resistance region 231n through openings provided in the insulating layer 225 and the insulating layer 215, respectively.

[0090] On the other hand, in the transistor 209 shown in Figure 12B, the insulating layer 225 overlaps with the channel formation region 231i of the semiconductor layer 231, but does not overlap with the low-resistance region 231n. For example, the structure shown in Figure 12B can be fabricated by processing the insulating layer 225 using the conductive layer 223 as a mask. In Figure 12B, an insulating layer 215 is provided covering the insulating layer 225 and the conductive layer 223, and the conductive layer 222a and conductive layer 222b are connected to the low-resistance region 231n, respectively, through openings in the insulating layer 215. Furthermore, an insulating layer 218 covering the transistor may also be provided.

[0091] <Example of Light-Emitting Device Configuration> Figure 13A shows an example of the configuration of a light-emitting device 550X that can be manufactured using a continuous film deposition apparatus CX according to one embodiment of the present invention. In this embodiment, the letter X used in the figure may be replaced with A or B as appropriate for the purpose of explanation. For example, the description of light-emitting device 550X may be replaced with the description of light-emitting device 550A or light-emitting device 550B.

[0092] The light-emitting device 550X comprises an electrode 551X, an electrode 552X, a unit 103X, a unit 103X2, an intermediate layer 106X, an electron injection layer 105X, and a hole injection layer 104X. Unit 103X is sandwiched between electrodes 552X and 551X, and unit 103X2 is sandwiched between electrodes 552X and unit 103X. The intermediate layer 106X is sandwiched between units 103X2 and unit 103X, the electron injection layer 105X is sandwiched between electrodes 552X and unit 103X2, and the hole injection layer 104X is sandwiched between unit 103X and electrode 551X. Unit 103X has the function of emitting photo-ELX, and unit 103X2 has the function of emitting photo-ELX2. A configuration comprising multiple light-emitting units and an intermediate layer is sometimes called a tandem-type light-emitting device. Tandem-type light-emitting devices have high current efficiency for light emission, or lower current density for the same brightness, or higher reliability.

[0093] Unit 103X comprises a hole transport layer 112X11, an electron transport layer 113X12, and a light-emitting layer 111X, with the light-emitting layer 111X sandwiched between the hole transport layer 112X11 and the electron transport layer 113X12. Unit 103X also comprises an electron blocking layer 112X12 and a hole blocking layer 113X11. The electron blocking layer 112X12 is sandwiched between the light-emitting layer 111X and the hole transport layer 112X11, and the hole blocking layer 113X11 is sandwiched between the electron transport layer 113X12 and the light-emitting layer 111X.

[0094] Unit 103X2 comprises a hole transport layer 112X21, an electron transport layer 113X22, and an emissive layer 111X2, with the emissive layer 111X2 sandwiched between the hole transport layer 112X21 and the electron transport layer 113X22. Unit 103X2 also comprises an electron blocking layer 112X22 and a hole blocking layer 113X21. The electron blocking layer 112X22 is sandwiched between the emissive layer 111X2 and the hole transport layer 112X21, and the hole blocking layer 113X21 is sandwiched between the electron transport layer 113X22 and the emissive layer 111X2.

[0095] The intermediate layer 106X comprises layers 106X1, 106X2, and 106X3. Layer 106X3 is sandwiched between layers 106X1 and 106X2, and layer 106X1 is sandwiched between unit 103X2 and layer 106X2. The intermediate layer 106X is also called the charge generation layer.

[0096] <Method for Manufacturing a Display Device> A method for manufacturing a display device using a continuous film deposition apparatus CX according to one embodiment of the present invention will be explained with reference to Figures 14 to 25. Specifically, a light-emitting device is formed on a substrate 510 using a continuous film deposition apparatus CX according to one embodiment of the present invention.

[0097] A functional layer 520 is formed on the substrate 510 (see Figure 14). The functional layer 520 comprises an insulating layer 501 and an insulating layer 521, with a pixel circuit between the insulating layers 501 and 521. Pixel electrodes connected to the pixel circuit are also formed on the substrate 510. An insulating film 529Bs and a structure 529Sp are formed between adjacent pixel electrodes. The structure 529Sp has an inverse tapered shape. In other words, the structure 529Sp has a side surface, and this side surface has an angle θ greater than 90° with respect to the surface of the substrate 510. For example, the side surfaces of the structure 529Sp shown in Figures 13B, 13C, and 14 all have an angle θ greater than 90° with respect to the surface of the substrate 510. The insulating layer 521 has a surface parallel to the surface of the substrate 510.

[0098] <Pre-treatment process> The substrate 510 is loaded into the continuous film deposition apparatus CX using the substrate loading / removal device CX-L. The substrate 510 is then transported from the substrate loading / removal device CX-L to the pre-treatment chamber CX-Pt using the substrate transport device. In the pre-treatment chamber CX-Pt, the substrate 510 is heated to remove any adsorbed water and other substances.

[0099] <Manufacturing process for light-emitting device 550A> The substrate 510 is transported from the pre-processing chamber CX-Pt to the deposition chamber CX-1 using a substrate transport device. In the deposition chamber CX-1, a hole injection layer 104A, a hole transport layer 112A11, and an electron blocking layer 112A12 are formed on the electrode 551A.

[0100] The substrate 510 is transported from deposition chamber CX-1 to deposition chamber CX-2 using a substrate transport device. In deposition chamber CX-2, an emissive layer 111A is formed on the electron blocking layer 112A12 (see Figure 15).

[0101] The substrate 510 is transported from deposition chamber CX-2 to deposition chamber CX-4 using a substrate transport device. In deposition chamber CX-4, a hole blocking layer 113A11 and an electron transport layer 113A12 are formed on the light-emitting layer 111A (see Figure 16).

[0102] The substrate 510 is transported from deposition chamber CX-4 to deposition chamber CX-5 using a substrate transport device. In deposition chamber CX-5, layer 106A2 is formed on the electron transport layer 113A12 (see Figure 17). Layer 106A2 contains an electron-injection material. The deposition source in deposition chamber CX-5 ejects the material in a direction inclined with respect to the perpendicular direction of the film-forming surface of the substrate 510. Even if the structure 529Sp has an inverse taper shape with respect to the substrate 510, layer 106A2 is formed on a part of the side surface of the structure 529Sp.

[0103] The substrate 510 is transported from deposition chamber CX-5 to deposition chamber CX-4 using a substrate transport device. In deposition chamber CX-4, layer 106A3 is formed on layer 106A2 (see Figure 18).

[0104] The substrate 510 is transported from deposition chamber CX-4 to deposition chamber CX-1 using a substrate transport device. In deposition chamber CX-1, layer 106A1, hole transport layer 112A21, and electron blocking layer 112A22 are formed on layer 106A3. Layer 106A1 contains a hole injection material.

[0105] The substrate 510 is transported from deposition chamber CX-1 to deposition chamber CX-2 using a substrate transport device. In deposition chamber CX-2, an emissive layer 111A2 is formed on the electron blocking layer 112A22.

[0106] The substrate 510 is transported from deposition chamber CX-2 to deposition chamber CX-4 using a substrate transport device. In deposition chamber CX-4, a hole blocking layer 113A21 and an electron transport layer 113A22 are formed on the light-emitting layer 111A2 (see Figure 19).

[0107] The substrate 510 is transported from deposition chamber CX-4 to deposition chamber CX-5 using a substrate transport device. In deposition chamber CX-5, an electron injection layer 105A and an electrode 552A are formed on the electron transport layer 113A22 (see Figure 20). The deposition source in deposition chamber CX-5 ejects the material in a direction inclined with respect to the perpendicular direction of the deposition surface of the substrate 510. Even if the structure 529Sp has an inverse taper shape with respect to the substrate 510, the electron injection layer 105A and the electrode 552A are formed on a part of the side surface of the structure 529Sp. Furthermore, if the structure 529Sp is made of a conductive material, the conductive structure 529Sp and the electrode 552A can be connected. In addition, a light-emitting device 550A is formed on the substrate 510 during this process.

[0108] The substrate 510 is transported from deposition chamber CX-5 to deposition chamber CX-6 using a substrate transport device. In deposition chamber CX-6, a protective layer 573A is formed to cover the electrode 552A (see Figure 21). The light-emitting device 550A is formed through the above steps. For example, a film containing aluminum and oxygen can be used for the protective layer 573A. The protective layer 573A has the function of protecting the light-emitting device 550A.

[0109] <Etching Process> The substrate 510 is transported from the deposition chamber CX-6 to the substrate loading / unloading device CX-L using a substrate transport device. The substrate 510 is removed from the substrate loading / unloading device CX-L and a photoresist PR is formed. Next, unwanted parts are removed using photolithography (see Figure 22). Specifically, the parts formed on the electrode 551B are removed. Finally, the photoresist PR is removed at the end of the etching process.

[0110] <Fabrication process for light-emitting device 550B> The substrate 510 is transported from the pre-processing chamber CX-Pt to the deposition chamber CX-1 using a substrate transport device. In the deposition chamber CX-1, a hole injection layer 104B, a hole transport layer 112B11, and an electron blocking layer 112B12 are formed on the electrode 551B.

[0111] A substrate 510 is transported from deposition chamber CX-1 to deposition chamber CX-3 using a substrate transport device. In deposition chamber CX-3, an emissive layer 111B is formed on the electron blocking layer 112B12.

[0112] The substrate 510 is transported from deposition chamber CX-3 to deposition chamber CX-4 using a substrate transport device. In deposition chamber CX-4, a hole blocking layer 113B11 and an electron transport layer 113B12 are formed on the light-emitting layer 111B.

[0113] The substrate 510 is transported from deposition chamber CX-4 to deposition chamber CX-5 using a substrate transport device. In deposition chamber CX-5, layer 106B2 is formed on the electron transport layer 113B12. Layer 106B2 contains an electron injection material.

[0114] The substrate 510 is transported from deposition chamber CX-5 to deposition chamber CX-4 using a substrate transport device. In deposition chamber CX-4, layer 106B3 is formed on layer 106B2.

[0115] The substrate 510 is transported from deposition chamber CX-4 to deposition chamber CX-1 using a substrate transport device. In deposition chamber CX-1, layer 106B1, hole transport layer 112B21, and electron blocking layer 112B22 are formed on layer 106B3. Layer 106B1 contains a hole injection material.

[0116] The substrate 510 is transported from deposition chamber CX-1 to deposition chamber CX-3 using a substrate transport device. In deposition chamber CX-3, an emissive layer 111B2 is formed on the electron blocking layer 112B22.

[0117] The substrate 510 is transported from deposition chamber CX-3 to deposition chamber CX-4 using a substrate transport device. In deposition chamber CX-4, a hole blocking layer 113B21 and an electron transport layer 113B22 are formed on the light-emitting layer 111B2.

[0118] The substrate 510 is transported from deposition chamber CX-4 to deposition chamber CX-5 using a substrate transport device. In deposition chamber CX-5, an electron injection layer 105B and an electrode 552B are formed on the electron transport layer 113B22. In this process, a light-emitting device 550B is formed on the substrate 510.

[0119] The substrate 510 is transported from deposition chamber CX-5 to deposition chamber CX-6 using a substrate transport device. In deposition chamber CX-6, a protective layer 573B is formed to cover the electrode 552B (see Figure 23). The light-emitting device 550B is formed through the above steps. For example, a film containing aluminum and oxygen can be used for the protective layer 573B. The protective layer 573B has the function of protecting the light-emitting device 550B.

[0120] <Etching Process> The substrate 510 is transported from the deposition chamber CX-6 to the substrate loading / unloading device CX-L using a substrate transport device. The substrate 510 is removed from the substrate loading / unloading device CX-L, a photoresist PR is formed, and unwanted parts are removed using photolithography (see Figure 24). Specifically, the parts formed on the light-emitting device 550A are removed. At the end of the etching process, the photoresist PR is removed (see Figure 25).

[0121] This embodiment can be appropriately combined with other embodiments shown in this specification.

[0122] CrDM: Deposition material crucible, CX-L: Substrate loading / unloading device, CX-Pt: Pre-treatment chamber, CX: Continuous film deposition apparatus, DM: Deposition material, GI: Gas inlet, GM: Gas, LimB: Limiting plate, PR: Photoresist, Sub: Substrate, TRX: Transport chamber, 103X: Unit, 104A: Hole injection layer, 104B: Hole injection layer, 104X: Hole injection layer, 105A: Electron injection layer, 105B: Electron injection layer, 105X: Electron injection layer, 106X: Intermediate layer, 111A: Light-emitting layer, 111B: Light-emitting layer, 111X: Light-emitting layer, 112A11: Hole transport layer, 112A12: Electron blocking layer, 112A21: Hole transport layer, 112A22: Electron block layer, 112B11: Hole transport layer, 112B12: Electron block layer, 112B21: Hole transport layer, 112B22: Electron block layer, 112X11: Hole transport layer, 112X12: Electron block layer, 112X21: Hole transport layer, 112X22: Electron block layer, 113A11: Hole block layer, 113A12: Electron transport layer, 113A21: Hole block layer, 113A22: Electron transport layer, 113B11: Hole block layer, 113B12: Electron transport layer, 113B21: Hole block layer, 113B22: Electron transport layer Electron transport layer, 113X11: Hole blocking layer, 113X12: Electron transport layer, 113X21: Hole blocking layer, 113X22: Electron transport layer, 202: Transistor, 204: Connector, 209: Transistor, 210: Transistor, 211: Insulating layer, 212: Insulating layer, 214: Insulating layer, 215: Insulating layer, 218: Insulating layer, 221: Conductive layer, 222a: Conductive layer, 222b: Conductive layer, 223: Conductive layer, 225: Insulating layer, 231: Semiconductor layer, 231i: Channel formation region, 231n: Low resistance region, 242: Connector layer, 400B: Display device, 416: Protective layer, 417: Light-shielding layer 421: Insulating layer, 430b: Light-emitting element, 430c: Light-emitting element, 442: Adhesive layer, 453: Substrate, 454: Substrate, 455: Adhesive layer, 462: Display section, 464: Circuit, 465: Wiring, 466: Conductive layer, 472: FPC, 501: Insulating layer, 510: Substrate, 520: Functional layer, 521: Insulating layer, 529Bs: Insulating film, 529Sp: Structure, 550A: Light-emitting device, 550B: Light-emitting device, 550X: Light-emitting device, 551A: Electrode, 551B: Electrode, 551X: Electrode, 552A: Electrode, 552B: Electrode, 552X: Electrode, 573A: Protective layer, 573B: Protective layer

Claims

The transport room and The first deposition chamber, The second deposition chamber, It has a third film deposition chamber, The transport chamber is connected to the first film deposition chamber, the second film deposition chamber, and the third film deposition chamber. The first film deposition chamber is equipped with a first evaporation source, The second film deposition chamber is equipped with a second evaporation source, The third deposition chamber is equipped with the function of depositing films using the ALD method. The second deposition source is a continuous film deposition apparatus that ejects material at a larger angle with respect to the perpendicular direction of the film deposition surface of the substrate compared to the first deposition source. 　 The continuous film deposition apparatus according to claim 1, wherein the second deposition source is mounted at a plurality of angles with respect to the perpendicular direction of the film deposition surface of the substrate. 　 The first film deposition chamber has the function of forming a first layer from the first deposition source, The second deposition chamber has the function of forming a second layer from the second deposition source. The continuous film deposition apparatus according to claim 1, wherein the third film deposition chamber has the function of forming a protective layer covering the first layer and the second layer. 　 The first film deposition chamber comprises a substrate support section and a scanning mechanism section, The substrate support portion has the function of supporting the substrate, The continuous film deposition apparatus according to claim 1, wherein the scanning mechanism has the function of moving the first deposition source along the film-forming surface of the substrate supported by the substrate support while maintaining a constant distance between the film-forming surface of the substrate supported by the substrate support and the first deposition source. 　 The first film deposition chamber comprises a substrate support section and a scanning mechanism section, The substrate support portion has the function of supporting the substrate, The continuous film deposition apparatus according to claim 1, wherein the scanning mechanism has the function of moving the substrate support while maintaining a constant distance between the film-depositing surface of the substrate supported by the substrate support and the first deposition source.

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