Polishing liquid, polishing method, component manufacturing method, and semiconductor component manufacturing method

Abstract

This polishing liquid comprises: abrasive grains containing a cerium-based compound; and a compound A having a plurality of carbon atoms to which at least one selected from the group consisting of a carboxy group, a carboxylate group, a phosphono group, and a phosphonate group is bonded, wherein the carbon atoms are bonded to nitrogen atoms. This polishing liquid comprises: abrasive grains containing a cerium-based compound; and a compound B having a triazole skeleton.

Description

Polishing liquid, polishing method, component manufacturing method, and semiconductor component manufacturing method

[0001] The present disclosure relates to a polishing liquid, a polishing method, a component manufacturing method, a semiconductor component manufacturing method, and the like.

[0002] In recent years, in the manufacturing process of electronic devices, the importance of processing technologies for high density, miniaturization, etc. has been increasing. Chemical Mechanical Polishing (CMP) technology, which is one of the processing technologies, is an essential technology in the manufacturing process of electronic devices for forming shallow trench isolation (STI), planarizing pre-metal insulating materials or interlayer insulating materials, forming plugs or embedded metal wirings, etc. As a polishing liquid used for CMP, a polishing liquid containing abrasive grains containing cerium oxide is known (see, for example, Patent Documents 1 and 2 below).

[0003] Japanese Patent Application Laid-Open No. 10-106994, Japanese Patent Application Laid-Open No. 08-022970

[0004] Regarding a polishing liquid that can be used for CMP, when simultaneously polishing a polished member having a silicon part such as a semiconductor chip and a metal part such as an electrode, it may be required to remove the silicon part early. However, when polishing the silicon part simultaneously with the metal part, the polishing rate of the silicon part is insufficient, and a high polishing rate of the silicon part is required in the polishing of the polished member having the silicon part and the metal part.

[0005] One aspect of the present disclosure is to provide a polishing liquid capable of obtaining a high polishing rate of a silicon part in the polishing of a polished member having a silicon part containing silicon and a metal part containing a metal material (for example, a copper-based metal). Another aspect of the present disclosure is to provide a polishing method using the polishing liquid. Another aspect of the present disclosure is to provide a component manufacturing method using the polishing method. Another aspect of the present disclosure is to provide a semiconductor component manufacturing method using the polishing method.

[0006] This disclosure includes, for example, the following aspects: [1] A polishing solution containing abrasive grains containing a cerium compound and compound A having a plurality of carbon atoms to which at least one selected from the group consisting of a carboxyl group, a carboxylic acid base, a phosphono group, and a phosphonic acid base is bonded, wherein the carbon atoms are bonded to nitrogen atoms. [2] The polishing solution according to [1], wherein compound A is at least one selected from the group consisting of diethylenetriaminepentaacetic acid, hydroxyethylethylenediaminetriacetic acid, ethylenediaminetetramethylenephosphonic acid, and salts thereof. [3] The polishing solution according to [1] or [2], wherein the content of compound A is 0.001 to 0.1% by mass. [4] A polishing solution containing abrasive grains containing a cerium compound and compound B having a triazole skeleton. [5] The polishing solution according to [4], wherein compound B is at least one selected from the group consisting of benzotriazole and 1,2,4-triazole. [6] The polishing solution according to [4] or [5], wherein the content of compound B is 0.001 to 1% by mass. [7] The polishing solution according to any one of [1] to [6], wherein the cerium-based compound contains cerium oxide. [8] The polishing solution according to any one of [1] to [7], wherein the content of the abrasive grains is 0.5 to 2% by mass. [9] The polishing solution according to any one of [1] to [8], further containing an organic acid component.

[10] The polishing solution according to any one of [1] to [9], further containing at least one selected from the group consisting of ammonium cations and ammonia.

[11] The polishing solution according to any one of [1] to

[10] , further containing an organic solvent.

[12] The polishing solution according to any one of [1] to

[11] , wherein the pH is 9.00 to 11.00.

[13] A polishing method for polishing a workpiece having a silicon portion containing silicon using the polishing solution according to any one of [1] to

[12] .

[14] The polishing method according to

[13] , wherein the member to be polished further comprises a metal part containing a metal material.

[15] The polishing method according to

[13] or

[14] , wherein the member to be polished further comprises a resin part containing a resin material.

[16] The polishing method according to

[15] , wherein the resin material contains epoxy resin.

[17] The polishing method according to

[15] or

[16] , wherein the resin part further comprises particles containing silicon oxide.

[18] A method for manufacturing a component, wherein a component is obtained using a member to be polished by the polishing method described in any one of

[13] to

[17] .

[19] A method for manufacturing a semiconductor component, wherein a semiconductor component is obtained using a member to be polished by the polishing method described in any one of

[13] to

[17] .

[0007] According to one aspect of this disclosure, a polishing solution is provided that can achieve a high polishing speed for the silicon portion of a workpiece comprising a silicon portion containing silicon and a metal portion containing a metal material (e.g., a copper-based metal). According to another aspect of this disclosure, a polishing method using the polishing solution is provided. According to yet another aspect of this disclosure, a method for manufacturing a part using the polishing method is provided. According to yet another aspect of this disclosure, a method for manufacturing a semiconductor part using the polishing method is provided.

[0008] The embodiments of this disclosure will be described below. However, this disclosure is not limited to the embodiments described below.

[0009] In this specification, numerical ranges indicated using "~" represent a range that includes the numbers before and after "~" as the minimum and maximum values, respectively. "A or greater" in a numerical range means A and the range exceeding A. "A or less" in a numerical range means A and the range less than A. In numerical ranges described stepwise in this specification, the upper or lower limit of a numerical range in one step can be arbitrarily combined with the upper or lower limit of a numerical range in another step. In numerical ranges described in this specification, the upper or lower limit of that numerical range may be replaced with the values ​​shown in the examples. "A or B" means that either A or B is included, or both are included. Unless otherwise specified, the materials exemplified in this specification can be used individually or in combination of two or more. The content of each component in a composition means the total amount of multiple substances present in the composition if there are multiple substances corresponding to each component, unless otherwise specified. The term "film" includes not only structures formed on the entire surface when observed as a plan view, but also structures formed on only a part of it. The term "process" includes not only independent processes but also any process that is not clearly distinguishable from other processes, as long as its intended function is achieved. Unless otherwise specified, "alkyl group" may be linear, branched, or cyclic. "Abrasive grain" refers to an aggregate of multiple particles, but for convenience, a single particle constituting an abrasive grain may also be called an abrasive grain.

[0010] <Polishing Solution> The polishing solution according to the first embodiment contains abrasive particles containing a cerium-based compound and compound A having multiple carbon atoms to which at least one selected from the group consisting of a carboxyl group, a carboxylic acid base, a phosphono group, and a phosphonic acid base is bonded, with the carbon atoms bonded to nitrogen atoms. The polishing solution according to the second embodiment contains abrasive particles containing a cerium-based compound and compound B having a triazole skeleton. The polishing solution according to the first embodiment and the polishing solution according to the second embodiment are collectively referred to as the polishing solution according to this embodiment. The polishing solution according to this embodiment can be used as a CMP polishing solution.

[0011] According to the polishing solution of this embodiment, when polishing a workpiece comprising a silicon portion containing silicon and a metal portion containing a metal material (e.g., a copper-based metal), it is possible to obtain a high polishing speed for the silicon portion. In the evaluation method described in the examples below, for example, a polishing speed of 300 nm / min or more (preferably 400 nm / min or more, 500 nm / min or more, 600 nm / min or more, or 700 nm / min or more) for the silicon portion can be obtained.

[0012] According to one embodiment of the polishing solution of this embodiment, a high polishing speed can be obtained for metal parts containing metal materials. Examples of metals in the metal material include copper, cobalt, tantalum, aluminum, titanium, tungsten, and manganese. Examples of metal materials include wiring materials and barrier metal materials. Examples of metal materials include copper-based metals (metallic copper (elemental metal), copper compounds, etc.), cobalt-based metals (metallic cobalt (elemental metal), etc.), tantalum-based metals (metallic tantalum (elemental metal), tantalum nitride, etc.), aluminum-based metals (metallic aluminum (elemental metal), etc.), titanium-based metals (metallic titanium (elemental metal), titanium nitride, etc.), tungsten-based metals (metallic tungsten (elemental metal), etc.), and manganese-based metals (metallic manganese (elemental metal), etc.). According to one embodiment of the polishing solution of this embodiment, in the evaluation method described in the examples below, a polishing speed of, for example, 300 nm / min or more (preferably 350 nm / min or more, or 400 nm / min or more) for copper can be obtained.

[0013] According to one embodiment of the polishing solution of this embodiment, a high polishing speed can be obtained for resin parts containing resin material. Examples of resin materials include epoxy resin, phenolic resin, acrylic resin, methacrylic resin, novolac resin, polyester (unsaturated polyester and polyester that does not fall under the category of unsaturated polyester), polyimide, polyamideimide, polyhydroxystyrene, polybenzoxazole (PBO), precursors of polybenzoxazole, polyallyl ether, heterocyclic resin (excluding the resins exemplified above), etc. Examples of heterocyclic resins include pyrrole ring-containing resin, pyridine ring-containing resin, imidazole ring-containing resin, etc. According to one embodiment of the polishing solution of this embodiment, in the evaluation method described in the examples below, a polishing speed of, for example, 300 nm / min or more (preferably 350 nm / min or more) for epoxy resin can be obtained.

[0014] In recent years, development of 2.1D integrated circuits, 2.5D integrated circuits, 3D integrated circuits, etc., has progressed from the perspective of increasing the speed, power consumption, and capacity of electronic devices, and interest has been growing in connection processes such as chip-to-chip, waxer-to-wafer, and chip-to-wafer, as well as semiconductor package manufacturing processes such as WLP (Wafer-Level Packaging) and PLP (Panel-Level Packaging). In these processes, the polished surface of the component to be polished, which is required to be planarized in order to obtain a good connection surface (here, not only the surface that is directly connected, but also the surface that serves as the base when connected via other components is referred to as the "connection surface"), may contain silicon, metal materials (e.g., copper-based metals), and resins (e.g., epoxy resins). For example, the member to be polished comprises a silicon portion containing silicon (e.g., a semiconductor chip), a metal portion containing a metal material (e.g., an electrode), and a resin portion containing a resin material (e.g., a sealing layer that seals a semiconductor chip). Alternatively, the member to be polished may comprise a silicon portion extending in the thickness direction and containing silicon, a metal portion extending in the thickness direction and containing a metal material, and a resin portion covering at least a part (or all) of the outer circumference of the silicon portion and at least a part (or all) of the outer circumference of the metal portion. The member to be polished may comprise at least one (e.g., more) metal portion.

[0015] According to one embodiment of the polishing liquid of this embodiment, a polishing liquid used to polish a workpiece comprising a silicon portion and a metal portion can achieve a high polishing speed for the workpiece comprising the silicon portion and the metal portion. For example, a high polishing speed can be obtained for the polished surface of the workpiece comprising the silicon portion and the metal portion in which silicon and metal materials are present. With such a polishing liquid, the aforementioned polished surface in which silicon and metal materials are present can be suitably smoothed.

[0016] According to one embodiment of the polishing liquid of this embodiment, when used to polish a workpiece comprising a silicone portion and a resin portion, it is possible to obtain a high polishing speed for the workpiece comprising the silicone portion and the resin portion. For example, a high polishing speed can be obtained for the polished surface of a workpiece comprising a silicone portion and a resin portion in which the silicone and resin materials are present. With such a polishing liquid, the aforementioned polished surface containing the silicone and resin materials can be smoothly smoothed.

[0017] According to one embodiment of the polishing liquid of this embodiment, when used to polish a workpiece comprising a silicon portion, a metal portion, and a resin portion, it is possible to obtain a high polishing speed for the workpiece comprising the silicon portion, the metal portion, and the resin portion. For example, a high polishing speed can be obtained for the polished surface of a workpiece comprising a silicon portion, a metal portion, and a resin portion in which silicon, metal material, and resin material are present. With such a polishing liquid, the aforementioned polished surface containing silicon, metal material, and resin material can be smoothly smoothed.

[0018] Furthermore, the polished surface of the member to be polished may contain resin materials (e.g., epoxy resin) and silicon compounds (compounds containing silicon; e.g., silicon oxide). For example, in the above-mentioned member to be polished comprising a silicon portion, a metal portion, and a resin portion, the resin portion may contain particles containing silicon compounds, resulting in the presence of silicon, metal materials, resin materials, and silicon compounds on the polished surface. In contrast, according to one embodiment of the polishing liquid of this embodiment, a high polishing speed can be obtained for a member to be polished comprising a resin portion containing resin materials (e.g., epoxy resin) and silicon compounds (e.g., silicon oxide). For example, a high polishing speed can be obtained for the polished surface of a member to be polished comprising a silicon portion, a metal portion, and a resin portion, where silicon, metal materials, resin materials, and silicon compounds are present. With such a polishing liquid, the above-mentioned polished surface containing silicon, metal materials, resin materials, and silicon compounds can be suitably smoothed.

[0019] Examples of silicon compounds include silicon oxides (e.g., SiO ２ Examples include silicon dioxide, SiOC, silicon nitride (e.g., SiN), etc. Particles containing silicon compounds may also contain silicon oxides. In the cross-section of the resin material and the resin part containing particles containing silicon compounds, the minor axis of the particles or the proportion of the area occupied by the particles (standard: entire cross-section) may be within the following ranges: The minor axis of the particles may be 0.01 μm or more, 0.2 μm or more, 0.6 μm or more, or 1.0 μm or more. The minor axis of the particles may be 100 μm or less, 50 μm or less, 25 μm or less, or 15 μm or less. From these viewpoints, the minor axis of the particles may be 0.01 to 100 μm. The proportion of the area may be 1% or more, 15% or more, 30% or more, 45% or more, or 60% or more. The proportion of the area may be 99% or less, 90% or less, 80% or less, or 70% or less. From these perspectives, the area ratio may be between 1% and 99%. The cross-sectional shape of the metal part perpendicular to the thickness direction of the resin part may be circular, and the diameter of the metal part may be between 1 and 200 μm. The spacing between adjacent metal parts may be between 1 and 200 μm.

[0020] (Abrasive grains) The polishing solution according to this embodiment contains abrasive grains containing a cerium-based compound, from the viewpoint of obtaining a high polishing speed for the silicon portion. Examples of cerium-based compounds include cerium oxide, cerium hydroxide, cerium ammonium nitrate, cerium acetate, cerium sulfate hydrate, cerium bromate, cerium bromide, cerium chloride, cerium oxalate, cerium nitrate, and cerium carbonate. The abrasive grains may also contain cerium oxide, from the viewpoint of easily obtaining a high polishing speed for the silicon portion.

[0021] The polishing solution according to this embodiment contains abrasive grains containing cerium oxide. By using abrasive grains containing cerium oxide, when polishing a workpiece comprising a silicon portion containing silicon and a metal portion containing a metal material, it becomes easier to obtain a high polishing speed for the silicon portion, as well as a high polishing speed for the workpiece comprising the metal portion and the resin portion.

[0022] When the abrasive grains contain cerium oxide, colloidal ceria, amorphous ceria, ceria-coated silica, etc., can be used as abrasive grains. The abrasive grains may also be abrasive grains containing cerium oxide whose surface has been modified with an alkyl group, or composite particles in which other particles are attached to the surface of abrasive grains containing cerium oxide.

[0023] The abrasive grains may contain one or more types of particles. Other constituent materials of the abrasive grains besides cerium compounds include silica (SiO₂). ２ Examples include inorganic materials such as alumina, zirconia, titania, germania, and silicon carbide.

[0024] The cerium compound content in the abrasive grains may be 90% by mass or more, 93% by mass or more, 95% by mass or more, greater than 95% by mass, 98% by mass or more, 99% by mass or more, 99.5% by mass or more, or 99.9% by mass or more, based on the total abrasive grains (the total abrasive grains contained in the polishing fluid, or the total of a single particle constituting the abrasive grains), from the viewpoint of easily obtaining high polishing speeds for the silicon, metal, and resin parts. The abrasive grains may be substantially composed of cerium compounds (a configuration in which substantially 100% by mass of the abrasive grains is cerium compounds). If the abrasive grains contain cerium oxide, the cerium oxide content in the abrasive grains may be within the above range.

[0025] The average particle size D50 or D80 of the abrasive grains may be within the following ranges. The average particle size D50 and D80 of the abrasive grains refer to the 50% and 80% particle sizes of the volume-based cumulative distribution, and can be measured, for example, by a laser diffraction particle size analyzer. The average particle size of the abrasive grains can be adjusted by natural sedimentation, grinding, dispersion, filtration, etc. For example, particle size adjustment may be performed after mixing the components of the polishing liquid.

[0026] The average particle size D50 of the abrasive grains may be 10 nm or more, 50 nm or more, 70 nm or more, 100 nm or more, 150 nm or more, greater than 150 nm, 200 nm or more, 250 nm or more, 300 nm or more, 320 nm or more, or 340 nm or more, from the viewpoint of easily obtaining high polishing speeds for the silicon, metal, and resin parts. The average particle size D50 of the abrasive grains may be 1000 nm or less, 800 nm or less, 600 nm or less, 500 nm or less, 450 nm or less, 400 nm or less, or 350 nm or less, from the viewpoint of easily suppressing polishing scratches. From these viewpoints, the average particle size D50 of the abrasive grains may be 10 to 1000 nm, 50 to 800 nm, 100 to 500 nm, or 200 to 400 nm.

[0027] The abrasive content may be within the following ranges based on the total mass of the polishing fluid. The abrasive content may be 0.01% by mass or more, 0.05% by mass or more, 0.1% by mass or more, 0.3% by mass or more, 0.5% by mass or more, greater than 0.5% by mass, 0.6% by mass or more, 0.7% by mass or more, 0.8% by mass or more, 0.9% by mass or more, or 1% by mass or more, from the viewpoint of easily obtaining high polishing speeds for the silicon, metal, and resin parts. The abrasive content may be 10% by mass or less, 8% by mass or less, 5% by mass or less, 4% by mass or less, 3% by mass or less, 2% by mass or less, 1.5% by mass or less, 1.3% by mass or less, 1.4% by mass or less, 1.2% by mass or less, 1.1% by mass or less, or 1% by mass or less, from the viewpoint of easily avoiding an increase in the viscosity of the polishing fluid and aggregation of abrasive grains. From these perspectives, the abrasive content may be 0.01 to 10% by mass, 0.1 to 5% by mass, 0.5 to 2% by mass, or 0.5 to 1.5% by mass.

[0028] (Water) The polishing solution according to this embodiment may contain water. The water may be included as the remainder after removing other components from the polishing solution. The water content may be within the following ranges based on the total mass of the polishing solution. The water content may be 90% by mass or more, 91% by mass or more, 92% by mass or more, 93% by mass or more, 94% by mass or more, 94.5% by mass or more, 95% by mass or more, 95.5% by mass or more, 96% by mass or more, or 97% by mass or more. The water content may be less than 100% by mass, 99% by mass or less, 98% by mass or less, 97% by mass or less, 96% by mass or less, or 95.5% by mass or less. From these viewpoints, the water content may be 90% by mass or more and less than 100% by mass, 90 to 99% by mass, or 95 to 99% by mass.

[0029] (Additives) The polishing solution according to this embodiment may contain components other than abrasive grains and water. Examples of such components include compound A, which has multiple carbon atoms to which at least one selected from the group consisting of carboxyl groups, carboxylic acid bases, phosphono groups, and phosphonic acid bases is bonded, and which carbon atoms are bonded to nitrogen atoms; compound B, which has a triazole skeleton; acid components; ammonium salts; ammonia; organic solvents; ether compounds; peroxides; surfactants; defoaming agents; and so on. The polishing solution does not have to contain at least one of these components.

[0030] [Compound A] The polishing solution according to the first embodiment contains compound A, which has multiple carbon atoms to which at least one selected from the group consisting of carboxyl groups, carboxylic acid bases, phosphono groups, and phosphonic acid bases is bonded, and which carbon atoms are bonded to nitrogen atoms. Compounds having both a structure in which multiple carbon atoms to which at least one selected from the group consisting of carboxyl groups, carboxylic acid bases, phosphono groups, and phosphonic acid bases is bonded, and a structure in which carbon atoms are bonded to nitrogen atoms, and other structures, shall be classified as compound A. From the viewpoint of easily obtaining a high polishing speed for the silicon part, each of the multiple carbon atoms to which at least one selected from the group consisting of carboxyl groups, carboxylic acid bases, phosphono groups, and phosphonic acid bases is bonded may be bonded to the same nitrogen atom.

[0031] According to the polishing solution of the first embodiment, a high polishing speed can be obtained for the silicon portion when polishing a workpiece comprising a silicon portion and a metal portion. The reason for this is not entirely clear, but the inventors speculate that it is as follows: In polishing a workpiece comprising a silicon portion and a metal portion, metal ions are easily generated by polishing the metal portion, and these generated metal ions may adhere to the silicon portion, suppressing the polishing of the silicon portion. However, because the polishing solution contains compound A, it is possible to capture the metal ions generated by polishing the metal portion, thereby suppressing the adhesion of metal ions to the silicon portion and enabling a high polishing speed for the silicon portion. However, the factors that produce the effect are not limited to the above.

[0032] Compounds of compound A that have multiple carbon atoms to which at least one selected from the group consisting of carboxyl groups and carboxylic acid bases is bonded, and to which carbon atoms are bonded to nitrogen atoms, include methylglycine diacetic acid, nitrilotriacetic acid, ethylenediaminetetraacetic acid, diethylenetriaminepentaacetic acid, cyclohexanediaminetetraacetic acid, hydroxyethylethylenediaminetriacetic acid, 1,2-diaminopropanetetraacetic acid, ethylenediamine orthohydroxyphenylacetic acid, ethylenediaminedisucnic acid, glutamic acid diacetic acid, pentetic acid, and salts thereof (e.g., sodium salts).

[0033] Examples of compounds in which compound A has multiple carbon atoms to which at least one selected from the group consisting of a phosphono group and a phosphonic acid base is bonded, and which carbon atoms are bonded to nitrogen atoms, include aminotrismethylenephosphonic acid and ethylenediaminetetramethylenephosphonic acid.

[0034] Compound A may contain at least one selected from the group consisting of diethylenetriaminepentaacetic acid, hydroxyethylethylenediaminetriacetic acid, ethylenediaminetetramethylenephosphonic acid, and salts thereof, from the viewpoint of easily obtaining a high polishing speed for the silicon portion. Compound A may contain a compound having multiple carbon atoms to which at least one selected from the group consisting of a phosphono group and a phosphonic acid base is bonded, and in which carbon atoms are bonded to a nitrogen atom, and may contain at least one selected from the group consisting of ethylenediaminetetramethylenephosphonic acid and salts thereof.

[0035] The molecular weight of compound A may be within the following ranges from the viewpoint of easily obtaining a high polishing speed for the silicon portion. The molecular weight of compound A may be 100 or more, 150 or more, 200 or more, 250 or more, 300 or more, 350 or more, 370 or more, 380 or more, or 390 or more. The molecular weight of compound A may be 1000 or less, 900 or less, 800 or less, 700 or less, 600 or less, 500 or less, or 450 or less. From these viewpoints, the content of compound A may be 100 to 1000, 100 to 600, 100 to 450, 200 to 1000, 200 to 600, 200 to 450, 300 to 1000, 300 to 600, or 300 to 450.

[0036] Compound A may have one nitrogen atom, or it may have multiple nitrogen atoms, from the viewpoint of easily obtaining a high polishing rate for the silicon portion. Having multiple nitrogen atoms in compound A makes it easier to capture metal ions, thus reducing the likelihood of the silicon portion being inhibited and making it easier to obtain a high polishing rate for the silicon portion. Each of the multiple nitrogen atoms may be bonded to a carbon atom to which at least one selected from the group consisting of a carboxyl group, a carboxylic acid base, a phosphono group, and a phosphonic acid base is bonded. Each of the multiple nitrogen atoms may also be bonded by an alkylene group (e.g., an ethylene group).

[0037] The number of nitrogen atoms in compound A may be within the following ranges, from the viewpoint of easily obtaining a high polishing speed for the silicon portion. The number of nitrogen atoms in compound A may be 1 or more, 2 or more, or 3 or more. The number of nitrogen atoms in compound A may be 5 or less, 4 or less, or 3 or less. From these viewpoints, the number of nitrogen atoms in compound A may be 1 to 5, 2 to 4, or 3.

[0038] The number of carbon atoms to which at least one selected from the group consisting of carboxyl groups, carboxylic acid bases, phosphono groups, and phosphonic acid bases is bonded in compound A may be within the following ranges from the viewpoint of easily obtaining a high polishing speed for the silicon portion. The number of carbon atoms to which at least one selected from the group consisting of carboxyl groups, carboxylic acid bases, phosphono groups, and phosphonic acid bases is bonded in compound A may be 2 or more, 3 or more, 4 or more, or 5 or more. The number of carbon atoms to which at least one selected from the group consisting of carboxyl groups, carboxylic acid bases, phosphono groups, and phosphonic acid bases is bonded in compound A may be 10 or less, 8 or less, 6 or less, or 5 or less. From these viewpoints, the number of carbon atoms to which at least one selected from the group consisting of carboxyl groups, carboxylic acid bases, phosphono groups, and phosphonic acid bases is bonded in compound A may be 2 to 10, 3 to 8, 4 to 6, or 5.

[0039] Compound A may be a chelating agent, as it facilitates obtaining a high polishing speed for the silicon portion. A chelating agent is a compound that forms a complex (chelate) with metal ions. Because compound A is a chelating agent, it becomes easier to capture metal ions, which reduces the inhibition of polishing in the silicon portion and makes it easier to obtain a high polishing speed for the silicon portion. Compound A may be a copper chelating agent.

[0040] When compound A is a chelating agent, the chelate stability constant of compound A may be 15 or higher, 18 or higher, 20 or higher, or 21 or higher, from the viewpoint of easily obtaining a high polishing speed of the silicon portion. The higher the chelate stability constant of compound A, the easier it is to capture metal ions, so the polishing of the silicon portion is less likely to be suppressed, and the easier it is to obtain a high polishing speed of the silicon portion. The chelate stability constant of compound A may be 30 or less, 28 or less, 26 or less, 24 or less, or 22 or less. From these viewpoints, the chelate stability constant of compound A may be 15 to 30, 18 to 26, 20 to 24, or 21 to 22. In this specification, the chelate stability constant is measured under conditions of 25°C and an ionic strength of 0.1, where the metal ion to be measured is copper ion (Cu ２＋ As such, it can be calculated based on the copper ion concentration when the copper ions and chelating agent reach equilibrium.

[0041] The content of compound A may be within the following ranges based on the total mass of the polishing solution, from the viewpoint of easily obtaining a high polishing speed for the silicon portion. The content of compound A may be 0.001% by mass or more, 0.003% by mass or more, 0.005% by mass or more, 0.008% by mass or more, 0.01% by mass or more, 0.02% by mass or more, 0.03% by mass or more, 0.04% by mass or more, 0.05% by mass or more, 0.06% by mass or more, 0.07% by mass or more, or 0.08% by mass or more. The content of compound A may be 5% by mass or less, 3% by mass or less, 1% by mass or less, less than 1% by mass, 0.8% by mass or less, 0.6% by mass or less, 0.5% by mass or less, less than 0.5% by mass, 0.4% by mass or less, 0.3% by mass or less, 0.2% by mass or less, 0.1% by mass or less, less than 0.1% by mass, 0.09% by mass or less, or 0.08% by mass or less. From these viewpoints, the content of compound A may be 0.001 to 5% by mass, 0.001 to 1% by mass, 0.001 to 0.8% by mass, 0.001 to 0.5% by mass, 0.001 to 0.1% by mass, 0.01 to 5% by mass, 0.01 to 1% by mass, 0.01 to 0.8% by mass, 0.01 to 0.5% by mass, 0.01 to 0.1% by mass, 0.05 to 5% by mass, 0.05 to 1% by mass, 0.05 to 0.8% by mass, 0.05 to 0.5% by mass, or 0.05 to 0.1% by mass. The content of diethylenetriaminepentaacetic acid may be within the above range.

[0042] The mass ratio of the content of Compound A to the content of abrasive grains (content of Compound A / content of abrasive grains) may be in the following range from the viewpoint of easily obtaining a high polishing rate of the silicon part. The mass ratio may be 0.001 or more, 0.003 or more, 0.005 or more, 0.008 or more, 0.01 or more, 0.02 or more, 0.03 or more, 0.05 or more, 0.06 or more, 0.07 or more, or 0.08 or more. The mass ratio may be 10 or less, 8 or less, 5 or less, 3 or less, 2 or less, 1 or less, 0.8 or less, 0.6 or less, 0.5 or less, 0.4 or less, 0.3 or less, 0.2 or less, 0.1 or less, 0.09 or less, or 0.08 or less. From these viewpoints, the mass ratio may be 0.001 to 10, 0.001 to 5, 0.001 to 1, 0.001 to 0.5, 0.001 to 0.1, 0.005 to 10, 0.005 to 5, 0.005 to 1, 0.005 to 0.5, 0.005 to 0.1, 0.005 to 10, 0.008 to 5, 0.008 to 1, 0.008 to 0.5, 0.008 to 0.1, 0.05 to 5, 0.05 to 1, 0.05 to 0.5, or 0.05 to 0.1. The mass ratio of the content of diethylenetriaminepentaacetic acid to the content of abrasive grains (content of diethylenetriaminepentaacetic acid / content of abrasive grains) may be within the above range.

[0043] [Compound B] The polishing liquid according to the second embodiment contains a compound having a triazole skeleton. A compound having a structure with a triazole skeleton and another structure in one molecule shall be classified as Compound B (however, compounds corresponding to Compound A are excluded).

[0044] According to the polishing solution of the second embodiment, a high polishing speed can be obtained for the silicon portion when polishing a workpiece comprising a silicon portion and a metal portion. The reason for this is not entirely clear, but the inventors speculate that it is as follows: In polishing a workpiece comprising a silicon portion and a metal portion, metal ions are easily generated by polishing the metal portion, and these generated metal ions may adhere to the silicon portion, suppressing the polishing of the silicon portion. However, because the polishing solution contains compound B, it can form a complex with the metal ions generated by polishing the metal portion, thereby suppressing the adhesion of metal ions to the silicon portion, and thus a high polishing speed can be obtained for the silicon portion. However, the factors that produce the effect are not limited to the above.

[0045] As compound B, examples include 1,2,3-triazole, 1,2,4-triazole, 3-amino-1H-1,2,4-triazole, benzotriazole, 1-hydroxybenzotriazole, 1-dihydroxypropylbenzotriazole, 2,3-dicarboxypropylbenzotriazole, 4-hydroxybenzotriazole, 4-carboxy-1H-benzotriazole, 4-carboxy-1H-benzotriazole methyl ester (methyl 1H-benzotriazole-4-carboxylate), 4-carboxy-1H-benzotriazole butyl ester (butyl 1H-benzotriazole-4-carboxylate), 4-carboxy-1H-benzotriazole octyl ester (octyl 1H-benzotriazole-4-carboxylate), 5-hexylbenzotriazole, [1,2,3-benzotriazolyl-1-methyl][1,2,4-triazolyl-1-methyl][2-ethylhexyl]amine, tolyltriazole, naphthotriazole, bis[(1-benzotriazolyl)methyl]phosphonic acid, 3H-1,2,3-triazolo[4,5-b]pyridin-3-ol, 1H-1,2,3-triazolo[4,5-b]pyridine, 1-acetyl-1H-1,2,3-triazolo[4,5-b]pyridine, 1,2,4-triazolo[1,5-a]pyrimidine, 2-methyl-5,7-diphenyl-[1,2,4]triazolo[1,5-a]pyrimidine, 2-methylsulfanyl-5,7-diphenyl-[1,2,4]triazolo[1,5-a]pyrimidine, 2-methylsulfanyl-5,7-diphenyl-4,7-dihydro-[1,2,4]triazolo[1,5-a]pyrimidine, and the like. From the viewpoint of easily obtaining a high polishing rate of the silicon part, the polishing liquid may contain at least one selected from the group consisting of 1,2,4-triazole and benzotriazole.

[0046] The molecular weight of compound B may be within the following ranges, from the viewpoint of easily obtaining a high polishing speed for the silicon portion. The molecular weight of compound B may be 60 or more, 70 or more, 80 or more, 90 or more, 100 or more, 110 or more, or 115 or more. The molecular weight of compound B may be 500 or less, 400 or less, 300 or less, 250 or less, 200 or less, 150 or less, 130 or less, or 120 or less. From these viewpoints, the content of compound B may be 60 to 500, 60 to 300, 60 to 150, 80 to 500, 80 to 300, 80 to 150, 100 to 500, 100 to 300, or 100 to 150.

[0047] Compound B may be a metal corrosion inhibitor, from the viewpoint of easily obtaining a high polishing rate for the silicon portion. A metal corrosion inhibitor is a compound that has a corrosive effect on metals. Because compound B is a metal corrosion inhibitor, it is easier to form a complex with metal ions, so the polishing of the silicon portion is less likely to be inhibited, and it is easier to obtain a high polishing rate for the silicon portion. Compound B may be a copper corrosion inhibitor.

[0048] The content of compound B may be within the following ranges based on the total mass of the polishing solution, from the viewpoint of easily obtaining a high polishing speed for the silicon portion: The content of compound B may be 0.001% by mass or more, 0.003% by mass or more, 0.005% by mass or more, 0.008% by mass or more, 0.01% by mass or more, 0.02% by mass or more, 0.03% by mass or more, 0.04% by mass or more, 0.05% by mass or more, 0.06% by mass or more, 0.07% by mass or more, or 0.08% by mass or more. The content of compound B may be 5% by mass or less, 3% by mass or less, 1% by mass or less, less than 1% by mass, 0.8% by mass or less, 0.6% by mass or less, 0.5% by mass or less, less than 0.5% by mass, 0.4% by mass or less, 0.3% by mass or less, 0.2% by mass or less, 0.1% by mass or less, less than 0.1% by mass, 0.09% by mass or less, or 0.08% by mass or less. From these viewpoints, the content of compound B may be 0.001 to 5% by mass, 0.001 to 1% by mass, 0.001 to 0.8% by mass, 0.001 to 0.5% by mass, 0.01 to 0.1% by mass, 0.01 to 5% by mass, 0.01 to 1% by mass, 0.01 to 0.8% by mass, 0.01 to 0.5% by mass, 0.01 to 0.1% by mass, 0.05 to 5% by mass, 0.05 to 1% by mass, 0.05 to 0.8% by mass, 0.05 to 0.5% by mass, or 0.05 to 0.1% by mass. The content of 1,2,4-triazole and the content of benzotriazole may be within the above ranges.

[0049] The mass ratio of the compound B content to the abrasive grain content (compound B content / abrasive grain content) may be within the following ranges from the viewpoint of easily obtaining a high polishing speed for the silicon portion. The mass ratio may be 0.001 or more, 0.003 or more, 0.005 or more, 0.008 or more, 0.01 or more, 0.02 or more, 0.03 or more, 0.05 or more, 0.06 or more, 0.07 or more, or 0.08 or more. The mass ratio may be 10 or less, 8 or less, 5 or less, 3 or less, 2 or less, 1 or less, 0.8 or less, 0.6 or less, 0.5 or less, 0.4 or less, 0.3 or less, 0.2 or less, 0.1 or less, 0.09 or less, or 0.08 or less. From these perspectives, the mass ratio may be 0.001-10, 0.001-5, 0.001-1, 0.001-0.5, 0.001-0.1, 0.005-10, 0.005-5, 0.005-1, 0.005-0.5, 0.005-0.1, 0.005-10, 0.008-5, 0.008-1, 0.008-0.5, 0.008-0.1, 0.05-5, 0.05-1, 0.05-0.5, or 0.05-0.1. The mass ratio of the 1,2,4-triazole content to the abrasive content (1,2,4-triazole content / abrasive content) and the mass ratio of the benzotriazole content to the abrasive content (benzotriazole content / abrasive content) may be within the above range.

[0050] The polishing solution according to this embodiment may contain compound A and compound B. The inclusion of compound A and compound B in the polishing solution makes it easier to achieve a high polishing speed for the silicon portion.

[0051] When the polishing solution contains only one of compound A or compound B, compound A makes it easier to achieve a high polishing speed of the silicon portion even with a smaller amount added. Furthermore, when the polishing solution contains only one of compound A or compound B, compound A is less likely to form sparingly soluble salts even when capturing metal ions, thus suppressing the residue of foreign matter during cleaning after polishing the workpiece.

[0052] [Acid component] The polishing solution according to this embodiment may contain an acid component. It is presumed that a high polishing speed can be easily obtained for the silicon and metal parts because the acid component forms a complex with the metal material (metal ions) and the acid component dissolves the metal material. The polishing solution may contain an organic acid component or an inorganic acid component as the acid component.

[0053] Examples of organic acid components include organic acids (excluding amino acids), organic acid esters, organic acid salts, amino acids, amino acid esters, and amino acid salts. Examples of organic acids include formic acid, acetic acid, propionic acid, butyric acid, valeric acid, 2-methylbutyric acid, n-hexanoic acid, 3,3-dimethylbutyric acid, 2-ethylbutyric acid, 4-methylpentanoic acid, n-heptanoic acid, 2-methylhexanoic acid, n-octanoic acid, 2-ethylhexanoic acid, benzoic acid, glycolic acid, salicylic acid, glyceric acid, oxalic acid, malonic acid, succinic acid, 3-methylphthalic acid, 4-methylphthalic acid, 3-aminophthalic acid, 4-aminophthalic acid, 3-nitrophthalic acid, 4-nitrophthalic acid, glutaric acid, adipic acid, pimelic acid, maleic acid, phthalic acid, isophthalic acid, malic acid, tartaric acid, citric acid, p-toluenesulfonic acid, p-phenolsulfonic acid, methylsulfonic acid, lactic acid, itaconic acid, quinaldic acid, etc. Examples of organic acid esters include esters of the above-mentioned organic acids. Examples of organic acid salts include alkali metal salts, alkaline earth metal salts, and halides of the organic acids mentioned above. Examples of amino acids include alanine, arginine, asparagine, aspartic acid, cysteine, glutamine, glutamic acid, glycine, histidine, isoleucine, leucine, lysine, methionine, phenylalanine, proline, serine, threonine, tryptophan, tyrosine, and valine. Examples of amino acid esters include esters of the amino acids mentioned above. Examples of amino acid salts include alkali metal salts of the organic acids mentioned above.

[0054] Inorganic acid components include inorganic acids and metal salts of inorganic acids (alkali metal salts, alkaline earth metal salts, etc.). Examples of inorganic acids include hydrochloric acid, sulfuric acid, nitric acid, and chromic acid.

[0055] The organic acid component may include at least one selected from the group consisting of an organic acid different from an amino acid and an amino acid, from the viewpoint of easily obtaining a high polishing speed for the silicon and metal parts, and may also include glycine. The organic acid component does not have to include malic acid.

[0056] The acid content may be within the following ranges based on the total mass of the polishing solution, from the viewpoint of easily obtaining high polishing speeds for the silicon and metal parts. The acid content may be greater than 0 mass%, 0.01 mass% or more, 0.02 mass% or more, 0.05 mass% or more, 0.1 mass% or more, 0.2 mass% or more, 0.3 mass% or more, 0.4 mass% or more, 0.5 mass% or more, 0.6 mass% or more, 0.7 mass% or more, 0.8 mass% or more, 0.85 mass% or more, 0.9 mass% or more, 1 mass% or more, 1.1 mass% or more, 1.2 mass% or more, 1.3 mass% or more, 1.4 mass% or more, 1.5 mass% or more, or 1.6 mass% or more. The content of the acid component is 5% by mass or less, 4.5% by mass or less, 4% by mass or less, 3.5% by mass or less, 3% by mass or less, 2.5% by mass or less, 2% by mass or less, 1.9% by mass or less, 1.8% by mass or less, 1.7% by mass or less, 1.6% by mass or less, 1.5% by mass or less, 1.4% by mass or less, 1.3% by mass or less, 1.2% by mass or less, It may be 1.1 mass% or less, 1 mass% or less, 0.9 mass% or less, 0.85 mass% or less, 0.8 mass% or less, 0.7 mass% or less, 0.6 mass% or less, 0.5 mass% or less, 0.4 mass% or less, 0.3 mass% or less, 0.2 mass% or less, 0.1 mass% or less, 0.05 mass% or less, or 0.02 mass% or less. From these perspectives, the content of the acid component may be greater than 0% by mass and 5% by mass or less, 0.01 to 5% by mass, 0.05 to 5% by mass, greater than 0% by mass and 2% by mass or less, 0.01 to 2% by mass, 0.05 to 2% by mass, greater than 0% by mass and 1% by mass or less, 0.01 to 1% by mass, 0.05 to 1% by mass, greater than 0% by mass and 0.5% by mass or less, 0.01 to 0.5% by mass, or 0.05 to 0.5% by mass.

[0057] The content of organic acid components may be within the following ranges based on the total mass of the polishing solution, from the viewpoint of easily obtaining high polishing speeds for the silicon and metal parts. The content of organic acid components may be greater than 0 mass%, 0.01 mass% or more, 0.02 mass% or more, 0.05 mass% or more, 0.1 mass% or more, 0.15 mass% or more, 0.2 mass% or more, 0.25 mass% or more, 0.3 mass% or more, 0.35 mass% or more, 0.4 mass% or more, 0.41 mass% or more, 0.45 mass% or more, 0.5 mass% or more, 0.6 mass% or more, or 0.8 mass% or more. The content of the organic acid component is 5% by mass or less, 4% by mass or less, 3% by mass or less, 2% by mass or less, 1% by mass or less, 0.8% by mass or less, 0.6% by mass or less, 0.5% by mass or less, 0.45% by mass or less, 0.41% by mass or less, 0 .4 mass% or less, 0.35 mass% or less, 0.3 mass% or less, 0.25 mass% or less, 0.2 mass% or less, 0.15 mass% or less, 0.1 mass% or less, 0.05 mass% or less, or 0.02 mass% or less. From these perspectives, the content of organic acid components may be greater than 0% by mass and 5% by mass or less, 0.01 to 5% by mass, 0.02 to 5% by mass, 0.1 to 5% by mass, greater than 0% by mass and 1% by mass or less, 0.01 to 1% by mass, 0.02 to 1% by mass, 0.1 to 1% by mass, greater than 0% by mass and 0.5% by mass or less, 0.01 to 0.5% by mass, 0.02 to 0.5% by mass, or 0.1 to 0.5% by mass.

[0058] [Ammonium Salt] The polishing solution according to this embodiment may contain an ammonium salt. It is presumed that the ammonium salt, or the ammonium cation of the ammonium salt, forms a complex with the metal material (metal ion), making it easier to obtain a high polishing rate for the silicon and metal parts. From the viewpoint of easily obtaining a high polishing rate for the silicon and metal parts, the ammonium salt may include an ammonium salt of an inorganic acid or an ammonium salt of an organic acid.

[0059] The ammonium salt may include at least one selected from the group consisting of ammonium salts of monovalent inorganic acids, ammonium salts of divalent inorganic acids, and ammonium salts of trivalent inorganic acids, from the viewpoint of easily obtaining high polishing speeds for the silicon and metal parts. The ammonium salt may also include at least one selected from the group consisting of ammonium chloride, ammonium carbonate, ammonium bicarbonate, ammonium sulfate, ammonium persulfate, ammonium dihydrogen phosphate, and ammonium acetate, from the viewpoint of easily obtaining high polishing speeds for the silicon and metal parts.

[0060] The ammonium salt may contain compounds having the following molecular weights, from the viewpoint of easily obtaining high polishing speeds for the silicon and metal parts. The molecular weight may be 50 or more, 60 or more, 70 or more, 75 or more, 80 or more, 90 or more, 100 or more, 110 or more, or 115 or more. The molecular weight may be 1000 or less, less than 1000, 800 or less, 500 or less, 300 or less, 250 or less, 200 or less, 180 or less, 150 or less, 140 or less, 130 or less, 120 or less, or 115 or less. From these perspectives, the molecular weight may be 50-1000, 70-1000, 100-1000, 50-500, 70-500, 100-500, 50-250, 70-250, 100-250, 50-150, 70-150, or 100-150.

[0061] The ammonium salt content (total amount of compounds corresponding to ammonium salts; the same applies hereinafter) may be within the following ranges based on the total mass of the polishing solution, from the viewpoint of easily obtaining high polishing speeds for the silicon and metal parts. The ammonium salt content may be 0.01% by mass or more, 0.02% by mass or more, 0.05% by mass or more, 0.1% by mass or more, 0.2% by mass or more, 0.3% by mass or more, 0.4% by mass or more, 0.45% by mass or more, 0.5% by mass or more, greater than 0.5% by mass, 0.6% by mass or more, or 0.65% by mass or more. The content of ammonium salt is 10% by mass or less, 8% by mass or less, 5% by mass or less, 4% by mass or less, 3% by mass or less, 2% by mass or less, 1.8% by mass or less, 1.7% by mass or less, 1.6% by mass or less, 1.5% by mass The content may be 1.4% by mass or less, 1.3% by mass or less, 1.2% by mass or less, 1.1% by mass or less, 1% by mass or less, less than 1% by mass, 0.9% by mass or less, 0.8% by mass or less, or 0.7% by mass or less. From these perspectives, the ammonium salt content may be 0.01 to 10% by mass, 0.01 to 5% by mass, 0.01 to 1% by mass, 0.01 to 0.8% by mass or less, 0.1 to 10% by mass, 0.1 to 5% by mass, 0.1 to 1% by mass, 0.1 to 0.8% by mass, 0.3 to 10% by mass, 0.3 to 5% by mass, 0.3 to 1% by mass, 0.3 to 0.8% by mass, 0.5 to 10% by mass, 0.5 to 5% by mass, 0.5 to 1% by mass, or 0.5 to 0.8% by mass. The ammonium dihydrogen phosphate content may be within the above ranges.

[0062] The mass ratio of the ammonium salt content to the abrasive grain content (ammonium salt content / abrasive grain content) may be within the following ranges from the viewpoint of easily obtaining high polishing speeds for the silicon and metal parts. The mass ratio may be 0.01 or more, 0.05 or more, 0.1 or more, 0.3 or more, 0.4 or more, 0.5 or more, or 0.6 or more. The content of the mass ratio may be 10 or less, 8 or less, 5 or less, 4 or less, 3 or less, 2 or less, 1 or less, 0.8 or less, or 0.7 or less. From these viewpoints, the mass ratio may be 0.01 to 10, 0.01 to 5, 0.01 to 3, 0.01 to 1, 0.1 to 10, 0.1 to 5, 0.1 to 3, 0.1 to 1, 0.5 to 10, 0.5 to 5, 0.5 to 3, or 0.5 to 1. The mass ratio of ammonium dihydrogen phosphate content to abrasive grain content (ammonium dihydrogen phosphate content / abrasive grain content) may be within the above range.

[0063] The mass ratio of the ammonium salt content to the compound A content (ammonium salt content / compound A content) may be within the following ranges from the viewpoint of easily obtaining high polishing speeds for the silicon and metal parts. The mass ratio may be 0.1 or more, 0.3 or more, 0.5 or more, 0.8 or more, 1 or more, 3 or more, 5 or more, or 8 or more. The mass ratio may be 200 or less, 150 or less, 120 or less, 100 or less, 80 or less, 50 or less, 20 or less, or 10 or less. From these viewpoints, the mass ratio may be 0.1 to 200, 0.1 to 100, 0.1 to 50, 0.1 to 10, 0.5 to 200, 0.5 to 100, 0.5 to 50, 0.5 to 10, 1 to 200, 1 to 100, 1 to 50, 1 to 10, 5 to 200, 5 to 100, 5 to 50, or 5 to 10. The mass ratio of the content of ammonium dihydrogen phosphate to the content of compound A (content of ammonium dihydrogen phosphate / content of compound A) may be within the above range.

[0064] The mass ratio of the ammonium salt content to the compound B content (ammonium salt content / compound B content) may be within the following ranges from the viewpoint of easily obtaining high polishing speeds for the silicon and metal parts. The mass ratio may be 0.1 or more, 0.3 or more, 0.5 or more, 0.8 or more, 1 or more, 3 or more, 5 or more, or 8 or more. The mass ratio may be 200 or less, 150 or less, 120 or less, 100 or less, 80 or less, 50 or less, 20 or less, or 10 or less. From these viewpoints, the mass ratio may be 0.1 to 200, 0.1 to 100, 0.1 to 50, 0.1 to 10, 0.5 to 200, 0.5 to 100, 0.5 to 50, 0.5 to 10, 1 to 200, 1 to 100, 1 to 50, 1 to 10, 5 to 200, 5 to 100, 5 to 50, or 5 to 10. The mass ratio of the ammonium dihydrogen phosphate content to the compound B content (ammonium dihydrogen phosphate content / compound B content) may be within the above range.

[0065] [Ammonia] The polishing solution according to this embodiment may contain ammonia. It is presumed that ammonia forms a complex with metal materials (metal ions), making it easier to obtain high polishing speeds for the silicon and metal parts. From the viewpoint of easily obtaining high polishing speeds for the silicon and metal parts, the polishing solution may contain at least one selected from the group consisting of ammonium cations and ammonia, and may also contain at least one selected from the group consisting of ammonium salts (ammonium salts of the inorganic acids mentioned above, ammonium salts of the organic acids mentioned above, etc.) and ammonia.

[0066] From the viewpoint of easily obtaining high polishing speeds for the silicon and metal parts, the ammonia content may be within the following ranges based on the total mass of the polishing solution: The ammonia content may be 0.01% by mass or more, 0.03% by mass or more, 0.05% by mass or more, 0.08% by mass or more, 0.1% by mass or more, 0.12% by mass or more, 0.15% by mass or more, 0.2% by mass or more, 0.25% by mass or more, or 0.3% by mass or more. The ammonia content may be 5% by mass or less, 4% by mass or less, 3% by mass or less, 2% by mass or less, 1.5% by mass or less, 1% by mass or less, 0.8% by mass or less, 0.6% by mass or less, 0.5% by mass or less, 0.4% by mass or less, or 0.3% by mass or less. From these perspectives, the ammonia content may be 0.01 to 5% by mass, 0.01 to 2% by mass, 0.01 to 0.5% by mass, 0.1 to 5% by mass, 0.1 to 2% by mass, 0.1 to 0.5% by mass, 0.2 to 5% by mass, 0.2 to 2% by mass, or 0.2 to 0.5% by mass.

[0067] The mass ratio of ammonia content to abrasive content (ammonia content / abrasive content) may be within the following ranges from the viewpoint of easily obtaining high polishing speeds for the silicon and metal parts. The mass ratio may be 0.01 or more, 0.05 or more, 0.1 or more, 0.3 or more, 0.4 or more, 0.5 or more, or 0.6 or more. The content of the mass ratio may be 10 or less, 8 or less, 5 or less, 4 or less, 3 or less, 2 or less, 1 or less, 0.8 or less, or 0.7 or less. From these viewpoints, the mass ratio may be 0.01 to 10, 0.01 to 5, 0.01 to 3, 0.01 to 1, 0.1 to 10, 0.1 to 5, 0.1 to 3, 0.1 to 1, 0.5 to 10, 0.5 to 5, 0.5 to 3, or 0.5 to 1.

[0068] The mass ratio of the ammonia content to the compound A content (ammonia content / compound A content) may be within the following ranges from the viewpoint of easily obtaining high polishing speeds for the silicon and metal parts. The mass ratio may be 0.01 or more, 0.05 or more, 0.1 or more, 0.3 or more, 0.5 or more, 0.8 or more, 1 or more, or 3 or more. The mass ratio may be 100 or less, 80 or less, 50 or less, 40 or less, 30 or less, 20 or less, 10 or less, 8 or less, or 5 or less. From these viewpoints, the mass ratio may be 0.01 to 100, 0.01 to 40, 0.01 to 10, 0.01 to 5, 0.3 to 100, 0.3 to 40, 0.3 to 10, 0.3 to 5, 1 to 100, 1 to 40, 1 to 10, 1 to 5, 3 to 100, 3 to 40, 3 to 10, or 3 to 5.

[0069] The mass ratio of the ammonia content to the compound B content (ammonia content / compound B content) may be within the following ranges from the viewpoint of easily obtaining high polishing speeds for the silicon and metal parts. The mass ratio may be 0.01 or more, 0.05 or more, 0.1 or more, 0.3 or more, 0.5 or more, 0.8 or more, 1 or more, or 3 or more. The mass ratio may be 100 or less, 80 or less, 50 or less, 40 or less, 30 or less, 20 or less, 10 or less, 8 or less, or 5 or less. From these viewpoints, the mass ratio may be 0.01 to 100, 0.01 to 40, 0.01 to 10, 0.01 to 5, 0.3 to 100, 0.3 to 40, 0.3 to 10, 0.3 to 5, 1 to 100, 1 to 40, 1 to 10, 1 to 5, 3 to 100, 3 to 40, 3 to 10, or 3 to 5.

[0070] The polishing solution according to this embodiment may contain peroxides other than the ammonium salts described above, or it may not contain such peroxides. Examples of peroxides include potassium persulfate, hydrogen peroxide, ferric nitrate, iron sulfate, ozone, hypochlorous acid, hypochlorite, potassium periodate, and peracetic acid. The polishing solution according to this embodiment may not contain hydrogen peroxide. The content of peroxides or hydrogen peroxide may be 0.1% by mass or less, less than 0.1% by mass, 0.01% by mass or less, 0.001% by mass or less, or substantially 0% by mass, based on the total mass of the polishing solution.

[0071] [Organic solvent] The polishing solution according to this embodiment may contain an organic solvent (excluding compounds that correspond to organic acid components). Using an organic solvent improves the wettability of the resin part and makes it easier to obtain a high polishing speed for the resin part.

[0072] As the organic solvent, any solvent that can be mixed with water can be used. Examples of organic solvents include glycol compounds such as ethylene glycol, propylene glycol, hexylene glycol, diethylene glycol, dipropylene glycol, triethylene glycol, and tripropylene glycol; alcohols such as methanol, ethanol, propanol, n-butanol, n-pentanol, n-hexanol, and isopropanol; and 2-methoxyethanol, 2-ethoxyethanol, 2-(2-methoxy)ethoxyethanol, 2-(2-butoxyethoxy)ethanol, 2-propoxyethanol, 2-butoxyethanol, and 3-methoxy-3- Examples include methyl-1-butanol, 2-(methoxymethoxy)ethanol, 2-isopropoxyethanol, 2-butoxyethanol, 2-isopentyloxyethanol, 1-propoxy-2-propanol, 3-methoxy-3-methyl-1-butanol, 3-methoxy-1-butanol, 3-methoxy-3-methylbutanol, 1-methoxy-2-butanol, glycol monoethers and other alkoxy alcohols; acetone, methyl ethyl ketones and other ketones; phenols; dimethylformamide; N-methylpyrrolidone; ethyl acetate; ethyl lactate; sulfolanes, etc.

[0073] The organic solvent may contain a glycol compound, and may also contain hexylene glycol, from the viewpoint of easily obtaining a high polishing speed for the resin part. The organic solvent does not have to contain an alkoxy alcohol, and does not have to contain 3-methoxy-3-methyl-1-butanol.

[0074] The organic solvent content may be within the following ranges based on the total mass of the polishing solution. From the viewpoint of easily obtaining sufficient wettability of the polishing solution to the resin part and easily obtaining a high polishing speed of the resin part, the organic solvent content may be 0.01% by mass or more, 0.03% by mass or more, 0.05% by mass or more, 0.07% by mass or more, 0.09% by mass or more, or 0.1% by mass or more. From the viewpoint of easily obtaining a high polishing speed of the resin part and easily reducing the possibility of ignition, the organic solvent content may be 1% by mass or less, 0.8% by mass or less, 0.6% by mass or less, 0.5% by mass or less, 0.4% by mass or less, 0.3% by mass or less, 0.2% by mass or less, or 0.15% by mass or less. From these viewpoints, the content of the organic solvent may be 0.01 to 1% by mass, 0.05 to 1% by mass, 0.1 to 1% by mass, 0.01 to 0.5% by mass, 0.05 to 0.5% by mass, 0.1 to 0.5% by mass, 0.01 to 3% by mass, 0.05 to 3% by mass, or 0.1 to 3% by mass. The content of hexylene glycol may be within the above ranges.

[0075] The mass ratio of the organic solvent content to the abrasive content (organic solvent content / abrasive content) may be within the following ranges from the viewpoint of easily obtaining a high polishing speed for the resin part. The mass ratio may be 0.01 or more, 0.03 or more, 0.05 or more, 0.07 or more, 0.09 or more, or 0.1 or more. The mass ratio may be 1 or less, 0.8 or less, 0.6 or less, 0.5 or less, 0.4 or less, 0.3 or less, 0.2 or less, or 0.15 or less. From these viewpoints, the mass ratio may be 0.01 to 1, 0.05 to 1, 0.1 to 1, 0.01 to 0.5, 0.05 to 0.5, 0.1 to 0.5, 0.01 to 3, 0.05 to 3, or 0.1 to 3. The mass ratio of the hexylene glycol content to the abrasive content (hexylene glycol content / abrasive content) may be within the above range.

[0076] The mass ratio of the organic solvent content to the compound A content (organic solvent content / compound A content) may be within the following ranges from the viewpoint of easily obtaining a high polishing speed for the resin part. The mass ratio may be 0.1 or more, 0.3 or more, 0.5 or more, 0.7 or more, 0.9 or more, or 1 or more. The mass ratio may be 100 or less, 80 or less, 60 or less, 50 or less, 40 or less, 30 or less, 20 or less, 15 or less, 10 or less, 5 or less, or 3 or less. From these viewpoints, the mass ratio may be 0.1 to 100, 0.5 to 100, 1 to 100, 0.1 to 50, 0.5 to 50, 1 to 50, 0.1 to 30, 0.5 to 30, 1 to 30, 0.1 to 10, 0.5 to 10, or 1 to 10. The mass ratio of the hexylene glycol content to the compound A content (hexylene glycol content / compound A content) may be within the above range.

[0077] The mass ratio of the organic solvent content to the compound B content (organic solvent content / compound B content) may be within the following ranges from the viewpoint of easily obtaining a high polishing speed for the resin part. The mass ratio may be 0.01 or more, 0.03 or more, 0.05 or more, 0.07 or more, 0.09 or more, or 0.1 or more. The mass ratio may be 100 or less, 80 or less, 60 or less, 50 or less, 40 or less, 30 or less, 20 or less, 15 or less, 10 or less, 5 or less, or 3 or less. From these viewpoints, the mass ratio may be 0.1 to 100, 0.5 to 100, 1 to 100, 0.1 to 50, 0.5 to 50, 1 to 50, 0.1 to 30, 0.5 to 30, 1 to 30, 0.1 to 10, 0.5 to 10, or 1 to 10. The mass ratio of the hexylene glycol content to the compound B content (hexylene glycol content / compound B content) may be within the above range.

[0078] The polishing solution according to this embodiment may or may not contain an ether compound. The ether compound is a compound having at least one ether group. The "ether group" in the ether compound does not include the "-O-" structure in hydroxyl groups, carboxyl groups, carboxylic acid bases, phosphono groups, phosphonic acid bases, ester groups, sulfo groups, and phosphate groups. The hydroxyl group does not include the OH group contained in carboxyl groups, phosphono groups, sulfo groups, and phosphate groups.

[0079] Examples of ether compounds include alkoxy alcohols and polyethers. Examples of alkoxy alcohols include 2-methoxyethanol, 2-ethoxyethanol, 2-(2-methoxy)ethoxyethanol, 2-(2-butoxyethoxy)ethanol, and 2-propoxyethanol. Examples of polyethers include polyglycerin, polyalkylene glycol, polyoxypropylene polyglyceryl ether, and polyoxyethylene polyglyceryl ether.

[0080] The ether compound content may be 1% by mass or less, less than 1% by mass, 0.1% by mass or less, 0.01% by mass or less, or substantially 0% by mass, based on the total mass of the polishing solution. The polyether compound content and the polyglycerin content may be within the above ranges.

[0081] The polishing solution according to this embodiment may or may not contain oligosaccharides. Oligosaccharides refer to compounds in which 2 to 20 monosaccharides are linked together, regardless of their bonding position. Examples of monosaccharides include allose, talose, gross, glucose, altrose, mannose, galactose, idose, rhamnose, erythrose, threose, ribose, lyxose, xylose, and arabinose.

[0082] Examples of oligosaccharides include cyclodextrin, cyclomannin, cycloawaodorin, isocyclomaltopentaose, isocyclomaltohexaose, cyclic nigerosylnigerose, and cyclic nigerosyltrisaccharide.

[0083] The oligosaccharide content may be less than 0.02% by mass, 0.01% by mass or less, less than 0.01% by mass, or substantially 0% by mass, based on the total mass of the polishing solution.

[0084] (pH) The pH of the polishing solution according to this embodiment may be within the following range, from the viewpoint of easily obtaining a high polishing speed for the silicon part, metal part, and resin part. The pH of the polishing solution may be 3.00 or higher, 4.00 or higher, greater than 4.00, 5.00 or higher, greater than 5.00, 6.00 or higher, 7.00 or higher, greater than 7.00, 7.50 or higher, 8.00 or higher, greater than 8.00, 8.50 or higher, 9.00 or higher, greater than 9.00, 9.30 or higher, 9.40 or higher, 9.50 or higher, 9.60 or higher, 9.80 or higher, 9.90 or higher, or 10.00 or higher. The pH of the polishing solution may be 13.00 or less, 12.00 or less, less than 12.00, 11.80 or less, 11.50 or less, 11.00 or less, less than 11.00, 10.80 or less, 10.70 or less, 10.60 or less, or 10.50 or less. From these perspectives, the pH of the polishing solution may be 3.00 to 13.00, 7.00 to 13.00, 8.00 to 13.00, 9.00 to 13.00, 10.00 to 13.00, 3.00 to 12.00, 7.00 to 12.00, 8.00 to 12.00, 9.00 to 12.00, 10.00 to 12.00, 3.00 to 11.00, 7.00 to 11.00, 8.00 to 11.00, 9.00 to 11.00, or 10.00 to 11.00. The pH of the polishing solution can be adjusted using the aforementioned acid components, ammonia, basic hydroxides, etc.

[0085] The pH of the polishing solution according to this embodiment can be measured using a pH meter (for example, model number PHL-40 manufactured by Toa DKK Corporation). For example, after calibrating the pH meter at two points using phthalate pH buffer (pH: 4.01) and neutral phosphate pH buffer (pH: 6.86) as standard buffers, the electrode of the pH meter is placed in the polishing solution, and the value is measured after it has stabilized for at least two minutes. At this time, the temperature of both the standard buffer and the polishing solution should be 25°C.

[0086] (Storage Method) The polishing solution according to this embodiment may be stored as a storage solution for polishing, with the amount of water reduced compared to when used. The storage solution for polishing is a storage solution for obtaining the polishing solution, and the polishing solution can be obtained by diluting the storage solution for polishing with water before or at the time of use. The dilution ratio is, for example, 1.5 times or more.

[0087] The polishing fluid according to this embodiment may be stored as a one-component polishing fluid containing at least abrasive grains and at least one compound selected from the group consisting of compound A and compound B, or it may be stored as a multi-component polishing fluid having a slurry (first liquid) and an additive liquid (second liquid). In a multi-component polishing fluid, the components of the polishing fluid are separated into slurry and additive liquid so that the slurry and additive liquid are mixed to form the polishing fluid. The slurry contains, for example, at least abrasive grains and water. The additive liquid contains, for example, water and at least one compound selected from the group consisting of compound A and compound B. Abrasive grains and additives other than compound A and compound B may be contained in the additive liquid among the slurry and the additive liquid. The components of the polishing fluid may be stored separated into three or more liquids. In a multi-component polishing fluid, the slurry and additive liquid may be mixed immediately before or during polishing to prepare the polishing fluid. In a multi-liquid polishing solution, the slurry and additive liquid may be supplied separately to a polishing platen, and the slurry and additive liquid may be mixed on the polishing platen to prepare the polishing solution.

[0088] <Polishing Method> The polishing method according to this embodiment comprises a polishing step of polishing a member to be polished using the polishing solution according to this embodiment. The member to be polished may include a silicon portion containing silicon. The member to be polished may further include a metal portion containing a metal material, and may further include a resin portion containing a resin material and a silicon compound (e.g., silicon oxide). The member to be polished may include a silicon portion and a metal portion, a silicon portion and a resin portion, or a silicon portion, a resin portion, and a metal portion.

[0089] The polishing method according to this embodiment comprises a polishing step of polishing a workpiece having a silicon portion using a polishing solution according to this embodiment. In the polishing step, it is possible to polish the surface of the workpiece, and to polish the surface where silicon is present. In the polishing step, at least a portion of the silicon portion of the workpiece can be polished and removed. The polishing solution used in the polishing step may be the one-component polishing solution described above, a polishing solution obtained by diluting the polishing solution storage solution described above with water, or a polishing solution obtained by mixing the slurry and additive solution of the multi-component polishing solution described above. The workpiece is not particularly limited and may be a wafer (e.g., a semiconductor wafer) or a chip (e.g., a semiconductor chip). The workpiece may be a wiring board or a circuit board.

[0090] In the polishing process, a surface to be polished can be polished if it contains at least one selected from the group consisting of silicon, metal materials (e.g., copper-based metals), and resin materials. The workpiece to be polished may contain silicon, metal materials, resins, and silicon compounds (e.g., silicon oxides), and may contain particles containing silicon, metal materials, resins, and silicon compounds. In the polishing process, a surface to be polished can be polished if it contains silicon, metal materials, resins, and silicon compounds.

[0091] The shape of the member to be polished is not particularly limited, and it may be in a configuration other than those described above, for example, a film. The member to be polished may have a substrate having recesses and protrusions on its surface, on which the object to be polished (at least one selected from the group consisting of a silicon part, a metal part, and a resin part) is provided. In addition to the at least one selected from the group consisting of a silicon part, a metal part, and a resin part, the member to be polished may also have other parts to be polished (for example, an insulating part including an insulating material).

[0092] <Manufacturing Method, etc.> The manufacturing method of a component according to this embodiment includes a component manufacturing step of obtaining a component using a workpiece (substrate) polished by the polishing method according to this embodiment. The component according to this embodiment is a component obtained by the manufacturing method of a component according to this embodiment. The component according to this embodiment is not particularly limited, but may be an electronic component (for example, a semiconductor component such as a semiconductor package), a wafer (for example, a semiconductor wafer), or a chip (for example, a semiconductor chip). As one embodiment of the manufacturing method of a component according to this embodiment, the manufacturing method of an electronic component according to this embodiment obtains an electronic component using a workpiece polished by the polishing method according to this embodiment. As one embodiment of the manufacturing method of a component according to this embodiment, the manufacturing method of a semiconductor component according to this embodiment obtains a semiconductor component (for example, a semiconductor package) using a workpiece polished by the polishing method according to this embodiment. The manufacturing method of a component according to this embodiment may include a polishing step of polishing the workpiece using the polishing method according to this embodiment before the component manufacturing step.

[0093] As one aspect of the component manufacturing process according to this embodiment, the component manufacturing process may include a piece-forming step in which the member to be polished (substrate) polished by the polishing method according to this embodiment is divided into individual pieces. The piece-forming step may be, for example, a step of dicing a wafer (e.g., a semiconductor wafer) polished by the polishing method according to this embodiment to obtain a chip (e.g., a semiconductor chip). As one aspect of the component manufacturing process according to this embodiment, the electronic component manufacturing process according to this embodiment may include a step of obtaining an electronic component (e.g., a semiconductor component) by dividing the member to be polished by the polishing method according to this embodiment into individual pieces. As one aspect of the component manufacturing process according to this embodiment, the semiconductor component manufacturing process according to this embodiment may include a step of obtaining a semiconductor component (e.g., a semiconductor package) by dividing the member to be polished by the polishing method according to this embodiment into individual pieces.

[0094] The method for manufacturing a part according to this embodiment may include, as one aspect of the part manufacturing process, a connection step of connecting (for example, electrically connecting) a member to be polished (substrate) polished by the polishing method according to this embodiment to another connected body. The connected body connected to the member to be polished by the polishing method according to this embodiment is not particularly limited and may be the member to be polished by the polishing method according to this embodiment, or it may be a connected body different from the member to be polished by the polishing method according to this embodiment. In the connection step, the member to be polished and the connected body may be directly connected (connected in a state where the member to be polished and the connected body are in contact), or they may be connected via another member (such as a conductive member). The connection step can be performed before the individualization step, after the individualization step, or before and after the individualization step.

[0095] The connection step may be a step of connecting the surface of the member to be polished, which has been polished by the polishing method according to this embodiment, to the connected body, or a step of connecting the connecting surface of the member to be polished, which has been polished by the polishing method according to this embodiment, to the connecting surface of the connected body. The connecting surface of the member to be polished may be the surface of the member to be polished, which has been polished by the polishing method according to this embodiment. By the connection step, a connected body comprising the member to be polished and the connected body can be obtained. In the connection step, if the connecting surface of the member to be polished has a metal part, the connected body may be brought into contact with the metal part. In the connection step, if the connecting surface of the member to be polished has a metal part and the connecting surface of the connected body has a metal part, the metal parts may be brought into contact with each other. The metal part may contain copper.

[0096] The device according to this embodiment (for example, an electronic device such as a semiconductor device) comprises a member to be polished by the polishing method according to this embodiment, and at least one selected from the group consisting of the component according to this embodiment.

[0097] The present disclosure will be described below in detail based on examples, but the present disclosure is not limited to these examples.

[0098] <Preparation of Polishing Solution> A polishing solution having the composition shown in Table 1 was obtained by mixing each component in Table 1 with distilled water. Table 1 shows the content of each component (unit: mass%) based on the total mass of the polishing solution, with the remainder being distilled water. As cerium oxide particles, the product name "HS-8005" manufactured by Resonaq Corporation was used. "DTPA" means diethylenetriaminepentaacetic acid, "BTA" means benzotriazole, "TA" means 1,2,4-triazole, "HEDTA" means hydroxyethylethylenediaminetriacetic acid, and "EDTMP" means ethylenediaminetetramethylenephosphonic acid.

[0099] <Average particle size of abrasive grains> The average particle size of abrasive grains in the polishing solution of each example was determined using "Microtrac MT3300EXII" manufactured by Microtrac-Bell Corporation. In each example, the average particle size D50 was 341 nm.

[0100] <pH of Polishing Solution> The pH of the polishing solution was measured using a pH meter (model number: PHL-40, manufactured by Toa DKK Co., Ltd.). The pH meter was calibrated at two points using phthalate pH buffer (pH: 4.01) and neutral phosphate pH buffer (pH: 6.86) as standard buffers. After that, the pH meter electrode was placed in the polishing solution, and the value was measured after it had stabilized for more than two minutes. The pH of the polishing solution was in the range of 10.0 to 10.5 in all cases.

[0101] <Polishing Evaluation> A pattern wafer (300 mm in diameter) was prepared, consisting of a silicon chip portion (initial film thickness 50 μm), a metal portion (metal material: copper, initial film thickness 50 μm), and a resin portion (resin material: epoxy resin, particles containing silicon oxide, initial film thickness: 50 μm) on a 775 μm silicon base.

[0102] In the polishing apparatus (manufactured by APPLIED MATERIALS, product name: Reflexion LK), the substrate was attached to a holder for mounting the substrate to which a suction pad was attached. The holder was placed on a surface plate to which a porous urethane resin pad (manufactured by DuPont (Dow), model number: IK4250H) was attached, so that the surface to be polished faced the pad. While supplying the polishing liquid mentioned above onto the pad at a supply rate of 350 mL / min, the substrate was pressed against the pad with a polishing load of 6.9 / 3.0 / 3.0 / 3.0 psi (RR / Z1 / Z2 / Z3). At this time, the surface plate was moved 123 min. －１ , holder 117 min －１ The polishing was performed by rotating the object. The polishing time was 3 minutes. After polishing, the substrate was thoroughly washed with pure water and then dried.

[0103] A stylus-type step meter was used to measure the change in thickness of the silicon, metal, and resin parts before and after polishing, and the polishing speed of the silicon, metal, and resin parts was determined. The average value of the change in thickness was measured at a total of five locations: the center of the pattern wafer and four equally spaced locations on the outer edge of the pattern wafer (centered around the center of the pattern wafer). The results are shown in Table 1.

[0104]

Claims

Abrasive grains containing cerium-based compounds, Compound A having multiple carbon atoms to which at least one selected from the group consisting of a carboxyl group, a carboxylic acid base, a phosphono group, and a phosphonic acid base is bonded, It contains, A polishing solution in which the aforementioned carbon atom is bonded to a nitrogen atom. 　 The polishing solution according to claim 1, wherein compound A comprises at least one selected from the group consisting of diethylenetriaminepentaacetic acid, hydroxyethylethylenediaminetriacetic acid, ethylenediaminetetramethylenephosphonic acid, and salts thereof. 　 The polishing solution according to claim 1, wherein the content of compound A is 0.001 to 0.1% by mass. 　 A polishing solution containing abrasive grains containing a cerium-based compound and compound B having a triazole skeleton. 　 The polishing solution according to claim 4, wherein compound B comprises at least one selected from the group consisting of benzotriazole and 1,2,4-triazole. 　 The polishing solution according to claim 4, wherein the content of compound B is 0.001 to 1% by mass. 　 The polishing solution according to any one of claims 1 to 6, wherein the cerium-based compound includes cerium oxide. 　 The polishing liquid according to any one of claims 1 to 6, wherein the content of the abrasive grains is 0.5 to 2% by mass. 　 The polishing solution according to any one of claims 1 to 6, further containing an organic acid component. The polishing solution according to any one of claims 1 to 6, further comprising at least one selected from the group consisting of ammonium cations and ammonia. 　 The polishing solution according to any one of claims 1 to 6, further comprising an organic solvent. 　 The polishing solution according to any one of claims 1 to 6, wherein the pH is 9.00 to 11.

00. A polishing method for polishing a member to be polished, which includes a silicon portion containing silicon, using the polishing liquid described in any one of claims 1 to 6. 　 The polishing method according to claim 13, wherein the member to be polished further comprises a metal part containing a metal material. 　 The polishing method according to claim 13, wherein the member to be polished further comprises a resin portion containing a resin material. 　 The polishing method according to claim 15, wherein the resin material includes an epoxy resin. 　 The polishing method according to claim 15, wherein the resin portion further comprises particles containing silicon oxide. 　 A method for manufacturing a part, comprising obtaining a part using a member to be polished by the polishing method described in claim 13. 　 A method for manufacturing a semiconductor component, comprising obtaining a semiconductor component using a member to be polished by the polishing method described in claim 13.

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