Substrate processing device and substrate processing method

Abstract

A substrate processing device according to the present invention comprises a substrate processing unit, an airflow formation unit, a discharge path, a bypass path, a first modification unit, and a control unit. The substrate processing unit has a holding unit that holds a substrate and a cup that surrounds the side of the holding unit. The airflow formation unit supplies a gas from above the cup to form an airflow that descends toward the cup. The discharge path is connected to the cup and transmits gas that is discharged from the cup. The bypass path connects the discharge path and a supply path for gas to the airflow formation unit. The first modification unit modifies the flow rate of gas that flows along the bypass path. The control unit controls the first modification unit to modify the flow rate of gas that flows into the bypass path from the discharge path or the supply path and thereby modifies the flow rate of gas that is discharged from the cup.

Description

Substrate processing apparatus and substrate processing method

[0001] This disclosure relates to a substrate processing apparatus and a substrate processing method.

[0002] Conventionally, a substrate processing apparatus is known that creates a downflow within a processing chamber by supplying gas into the processing chamber from an air supply section located in the ceiling of the processing chamber, while exhausting it from an exhaust section connected to the bottom of the processing chamber and the lower part of the processing cup (see Patent Document 1).

[0003] Japanese Patent Publication No. 2011-249848

[0004] This disclosure provides a technology that can suppress downflow disturbances caused by changes in engine displacement.

[0005] A substrate processing apparatus according to one aspect of the present disclosure comprises a substrate processing unit, an airflow forming unit, an exhaust passage, a bypass passage, a first modification unit, and a control unit. The substrate processing unit has a holding unit for holding a substrate and a cup surrounding the sides of the holding unit. The airflow forming unit supplies gas from above the cup to form a downward airflow toward the cup. The exhaust passage is connected to the cup and through which the gas discharged from the cup flows. The bypass passage connects the exhaust passage to a gas supply passage to the airflow forming unit. The first modification unit changes the flow rate of the gas flowing through the bypass passage. The control unit controls the first modification unit to change the flow rate of the gas flowing from the exhaust passage or the supply passage into the bypass passage, thereby changing the flow rate of the gas discharged from the cup.

[0006] According to this disclosure, it is possible to suppress downflow disturbances caused by changes in engine displacement.

[0007] Figure 1 is a diagram showing the configuration of a substrate processing apparatus according to the first embodiment. Figure 2 is a flowchart showing the procedure for substrate processing performed by the substrate processing apparatus according to the first embodiment. Figure 3 is a diagram showing an example of the flow rate of gas flowing through each of the intake, exhaust, and bypass passages before the exhaust volume change processing. Figure 4 is a diagram showing an example of the flow rate of gas flowing through each of the intake, exhaust, and bypass passages after the exhaust volume change processing. Figure 5 is a diagram showing the configuration of a substrate processing apparatus according to the second embodiment. Figure 6 is a diagram showing an example of the flow rate of gas flowing through each of the intake, exhaust, and bypass passages before the exhaust volume change processing. Figure 7 is a diagram showing an example of the flow rate of gas flowing through each of the intake, exhaust, and bypass passages after the exhaust volume change processing. Figure 8 is a diagram showing the configuration of a substrate processing apparatus according to the third embodiment. Figure 9 is a diagram showing an example of the flow rate of gas flowing through each of the intake, exhaust, and bypass passages after the exhaust volume change processing. Figure 10 is a diagram showing an example of the flow rate of gas flowing through each of the intake, exhaust, and bypass passages after the exhaust volume change processing. Figure 11 is a diagram showing the configuration of a substrate processing apparatus according to the fourth embodiment. Figure 12 shows an example of the gas flow rates through the intake, exhaust, and bypass passages after the exhaust volume change processing. Figure 13 shows the configuration of the substrate processing apparatus according to the fifth embodiment. Figure 14 shows an example of the gas flow rates through the intake, exhaust, and bypass passages before the exhaust volume change processing. Figure 15 shows an example of the gas flow rates through the intake, exhaust, and bypass passages after the exhaust volume change processing. Figure 16 shows the configuration of the substrate processing apparatus according to the sixth embodiment. Figure 17 shows the configuration of the substrate processing apparatus according to the seventh embodiment.

[0008] The embodiments for carrying out the substrate processing apparatus and substrate processing method according to this disclosure (hereinafter referred to as "embodiments") will be described in detail below with reference to the drawings. However, this disclosure is not limited by these embodiments. Furthermore, each embodiment can be combined as appropriate, provided that the processing content is not inconsistent. Also, the same parts are denoted by the same reference numerals in each of the following embodiments, and redundant descriptions are omitted.

[0009] Furthermore, in the embodiments described below, expressions such as "constant," "orthogonal," "perpendicular," or "parallel" may be used, but these expressions do not require strict "constant," "orthogonal," "perpendicular," or "parallel." In other words, each of the above expressions allows for errors and tolerances, such as manufacturing accuracy and installation accuracy.

[0010] Furthermore, in the drawings referenced below, for the sake of clarity, mutually orthogonal X, Y, and Z axis directions are sometimes defined, and a Cartesian coordinate system is shown with the positive Z axis as the vertically upward direction. Also, the direction of rotation with the vertical axis as the center of rotation is sometimes referred to as the θ direction.

[0011] Conventionally, a substrate processing apparatus is known that creates a downflow within the processing chamber by supplying gas into the processing chamber from an air supply section located in the ceiling of the processing chamber, while exhausting it from exhaust sections connected to the bottom of the processing chamber and the lower part of the processing cup.

[0012] However, the conventional technology described above has a problem in that the downflow is disrupted when the exhaust volume from the processing cup is changed.

[0013] In other words, in conventional technology, the flow rate of gas discharged from the processing cup is changed by switching between exhaust outlets connected to the bottom of the processing chamber and the bottom of the processing cup. As a result, the direction of the airflow toward the processing cup changes between the direction toward the bottom of the processing chamber and the direction toward the bottom of the processing cup, which may result in turbulence of the downflow. This turbulence of the downflow makes it difficult to maintain a clean atmosphere inside the processing chamber and may affect the substrate processing, for example, by causing contaminants to adhere to the substrate.

[0014] Therefore, there is a need for technology that can suppress downflow turbulence caused by changes in engine displacement.

[0015] (First Embodiment) First, the configuration of the substrate processing apparatus according to the first embodiment will be described with reference to Figure 1. Figure 1 is a diagram showing the configuration of the substrate processing apparatus according to the first embodiment.

[0016] As shown in Figure 1, the substrate processing apparatus 1 comprises a chamber 10, a substrate processing unit 1a, and a control device 60. The substrate processing unit 1a comprises a substrate holding mechanism 20, a liquid supply unit 30, and a recovery cup 40.

[0017] Chamber 10 houses the substrate processing unit 1a. An FFU (Fan Filter Unit) 11 (an example of an airflow forming unit) is provided on the ceiling of Chamber 10. The FFU 11 is connected to a gas supply source 13 via an air supply passage 12, and by supplying gas from the gas supply source 13 into Chamber 10 from the ceiling, a downward airflow (downflow) toward the recovery cup 40 is formed inside Chamber 10. Examples of gases used to form the downflow include dry air and N2. ２ (Nitrogen) gas, etc., is used.

[0018] The substrate holding mechanism 20 comprises a holding portion 21, a support column portion 22, and a drive unit 23. The holding portion 21 holds a wafer W (an example of a substrate) horizontally. The support column portion 22 is a member that extends in the vertical direction, with its base end rotatably supported by the drive unit 23, and its tip horizontally supporting the holding portion 21. The drive unit 23 rotates the support column portion 22 around a vertical axis. The substrate holding mechanism 20 rotates the holding portion 21 supported by the support column portion 22 by rotating the support column portion 22 using the drive unit 23, thereby rotating the wafer W held by the holding portion 21.

[0019] The liquid supply unit 30 supplies a processing liquid to the wafer W. The liquid supply unit 30 is equipped with a nozzle 31 for discharging the processing liquid. A processing liquid supply source 32 is connected to the nozzle 31. The liquid supply unit 30 supplies the processing liquid supplied from the processing liquid supply source 32 onto the wafer W. The processing liquid is, for example, a coating liquid for forming a coating film such as a resist film. The processing liquid may also be a developer used in the developing process or a cleaning liquid used in the cleaning process.

[0020] The collection cup 40 is positioned to surround the sides of the holding unit 21 and collects the processing liquid scattered from the wafer W as the holding unit 21 rotates. A drain port 41 is formed at the bottom of the collection cup 40. A drain channel 42 is connected to the drain port 41, and the processing liquid collected by the collection cup 40 is discharged from the drain port 41 through the drain channel 42 to the outside of the substrate processing apparatus 1. An exhaust port 43 is also formed at the bottom of the collection cup 40 to discharge the gas supplied from the FFU 11 to the outside of the substrate processing apparatus 1.

[0021] Here, the exhaust system of the substrate processing apparatus 1 will be described. An exhaust port 43 is formed at the bottom of the recovery cup 40. An exhaust passage 44 is connected to the exhaust port 43, and the gas discharged from the recovery cup 40 is discharged from the exhaust port 43 through the exhaust passage 44 to the outside of the substrate processing apparatus 1.

[0022] Furthermore, the substrate processing apparatus 1 includes a bypass passage 50 that connects the exhaust passage 44 and the supply passage 12. The bypass passage 50 is a passage that returns a portion of the gas flowing through the exhaust passage 44 to the supply passage 12. The bypass passage 50 is provided with a flow rate changing section 51 (an example of a first changing section) and a filter 52.

[0023] The flow rate changing unit 51 is, for example, a blower, and changes the flow rate of gas flowing through the bypass passage 50, thereby changing the flow rate of gas flowing from the exhaust passage 44 to the bypass passage 50. The flow rate changing unit 51 as a blower has a fan, and changes the flow rate of gas flowing through the bypass passage 50 by changing the rotation speed of the fan. The flow rate changing unit 51 is electrically connected to the control device 60 and is controlled by the control device 60. The flow rate changing unit 51 can be any device capable of changing the flow rate of gas flowing through the bypass passage 50, for example, a pump.

[0024] The filter 52 purifies the gas flowing through the bypass passage 50. The filter 52 removes components of the treatment liquid from the gas flowing through the bypass passage 50.

[0025] The control device 60 controls the operation of the substrate processing device 1. This control device 60 is, for example, a computer and comprises a control unit 61 and a storage unit 62. The control unit 61 includes a microcomputer having a CPU (Central Processing Unit), ROM (Read Only Memory), RAM (Random Access Memory), input / output ports, and various circuits. The CPU of this microcomputer realizes the control described later by reading and executing a program stored in the ROM. The storage unit 62 is realized by, for example, a semiconductor memory element such as RAM or flash memory, or a storage device such as a hard disk or optical disc.

[0026] Such a program may have been recorded on a computer-readable recording medium and installed from that recording medium into the storage unit 62 of the control device 60. Examples of computer-readable recording media include hard disks (HDs), flexible disks (FDs), compact disks (CDs), magnetic optical disks (MOs), and memory cards.

[0027] Next, the specific operation of the substrate processing apparatus 1 according to the first embodiment will be described with reference to Figure 2. Figure 2 is a flowchart showing the substrate processing procedure performed by the substrate processing apparatus 1 according to the first embodiment. Note that each process shown in Figure 2 is executed according to the control of the control unit 61.

[0028] As shown in Figure 2, the control unit 61 first performs a loading process (step S101). In the loading process, the control unit 61 controls a substrate transport device (not shown) and other devices to load the wafer W into the chamber 10, and the loaded wafer W is held by the holding part 21 of the substrate holding mechanism 20. After that, the control unit 61 rotates the wafer W by rotating the holding part 21 around the vertical axis using the drive unit 23.

[0029] Next, the control unit 61 performs a coating film formation process (step S102). In the coating film formation process, the control unit 61 controls the liquid supply unit 30 to supply the coating liquid, which is the processing liquid, to the rotating wafer W. As a result, a coating film, such as a resist film, is formed on the wafer W.

[0030] Furthermore, before the start of the coating film formation process, the control unit 61 controls the flow rate change unit 51 to set the flow rate of the gas flowing from the exhaust passage 44 to the bypass passage 50 to a predetermined first flow rate for the coating film formation process. The first flow rate is, for example, a flow rate that allows the atmosphere inside the chamber 10 to be kept clean during the coating film formation process.

[0031] Next, the control unit 61 performs an exhaust volume change process (step S103). In the exhaust volume change process, the control unit 61 controls the flow rate change unit 51 to change the flow rate of gas flowing from the exhaust passage 44 to the bypass passage 50, thereby changing the flow rate of gas discharged from the recovery cup 40. Specifically, the control unit 61 reduces the flow rate of gas flowing from the exhaust passage 44 to the bypass passage 50 from a first flow rate to a second flow rate that is smaller than the first flow rate. This allows the control unit 61 to reduce the flow rate of gas discharged from the recovery cup 40. The second flow rate is a predetermined flow rate for the drying process. The second flow rate is, for example, a flow rate that allows for the maintenance of uniformity in the processing result (film thickness) between the center and outer periphery of the wafer W during the drying process.

[0032] Next, the control unit 61 controls the drive unit 23 and other components to increase the rotation speed of the wafer W, thereby performing a spin-drying treatment on the wafer W (step S104). Finally, the control unit 61 controls a substrate transport device (not shown) and other components to remove the wafer W from the chamber 10 (step S105), thus completing the series of substrate processing operations.

[0033] Here, a specific example of the exhaust volume change process according to the first embodiment will be described with reference to FIGS. 3 and 4. FIG. 3 is a diagram showing an example of the flow rate of the gas flowing through each of the intake passage 12, the exhaust passage 44, and the bypass passage 50 before the exhaust volume change process is performed. FIG. 4 is a diagram showing an example of the flow rate of the gas flowing through each of the intake passage 12, the exhaust passage 44, and the bypass passage 50 after the exhaust volume change process is performed.

[0034] As shown in FIGS. 3 and 4, in the exhaust volume change process, the control unit 61 controls the flow rate change unit 51 to change the flow rate of the gas flowing from the exhaust passage 44 into the bypass passage 50, thereby changing the flow rate of the gas discharged from the recovery cup 40. For example, in the example shown in FIGS. 3 and 4, the control unit 61 stops the fan of the flow rate change unit 51, so that the flow rate of the gas flowing from the exhaust passage 44 into the bypass passage 50 is changed from the first flow rate: 4 (m ３ / min) to the second flow rate smaller than the first flow rate: 0 (m ３ / min). As a result, the control unit 61 can change the flow rate of the gas discharged from the recovery cup 40 from 10 (m ３ / min) to 6 (m ３ / min).

[0035] Thus, in the substrate processing apparatus 1 according to the first embodiment, the flow rate of the gas flowing from the exhaust passage 44 into the bypass passage 50 is changed, thereby changing the flow rate of the gas discharged from the recovery cup 40. As a result, the substrate processing apparatus 1 can change the exhaust volume from the recovery cup 40 without changing the flow direction of the airflow toward the recovery cup 40. Therefore, according to the substrate processing apparatus 1, it is possible to suppress the disturbance of the downflow accompanying the change in the exhaust volume.

[0036] (Second Embodiment) FIG. 5 is a diagram showing the configuration of the substrate processing apparatus according to the second embodiment. As shown in FIG. 5, the substrate processing apparatus 1 according to the second embodiment includes a plurality (here, two) of substrate processing units 1a and 1b. The substrate processing unit 1b has the same configuration as the substrate processing unit 1a. In FIG. 5, for convenience of explanation, the illustration of the liquid supply unit 30 of the substrate processing unit 1a is omitted.

[0037] The exhaust passage 44 has a plurality (here, two) of individual exhaust passages 44a and a common exhaust passage 44b. The plurality of individual exhaust passages 44a are respectively connected to the recovery cups 40 in the plurality of substrate processing units 1a, 1b. The common exhaust passage 44b is connected to the plurality of individual exhaust passages 44a. The gas discharged from the recovery cups 40 in the plurality of substrate processing units 1a, 1b flows through the common exhaust passage 44b via the plurality of individual exhaust passages 44a.

[0038] The bypass passage 50 connects the common exhaust passage 44b and the air supply passage 12.

[0039] Next, the content of the exhaust volume change process according to the second embodiment will be described. The control unit 61 controls the flow rate change unit 51 to change the flow rate of the gas flowing from the common exhaust passage 44b into the bypass passage 50, thereby collectively changing the flow rate of the gas discharged from the recovery cups 40 in the plurality of substrate processing units 1a, 1b. For example, the control unit 61 reduces the flow rate of the gas flowing from the common exhaust passage 44b into the bypass passage 50 from the first flow rate for the coating film formation process to the second flow rate for the drying process, which is smaller than the first flow rate. Thereby, the control unit 61 can collectively reduce the flow rate of the gas discharged from the recovery cups 40 in the plurality of substrate processing units 1a, 1b.

[0040] Here, a specific example of the exhaust volume change process according to the second embodiment will be described with reference to FIGS. 6 and 7. FIG. 6 is a diagram showing an example of the flow rate of the gas flowing through each of the air supply passage 12, the exhaust passage 44, and the bypass passage 50 before the exhaust volume change process is performed. FIG. 7 is a diagram showing an example of the flow rate of the gas flowing through each of the air supply passage 12, the exhaust passage 44, and the bypass passage 50 after the exhaust volume change process is performed.

[0041] As shown in FIGS. 6 and 7, in the exhaust volume change process, the control unit 61 controls the flow rate change unit 51 to change the flow rate of the gas flowing from the common exhaust passage 44b into the bypass passage 50, thereby changing the flow rate of the gas discharged from the recovery cups 40 in the plurality of substrate processing units 1a, 1b. For example, in the example shown in FIGS. 6 and 7, the control unit 61 stops the fan of the flow rate change unit 51, so that the flow rate of the gas flowing from the common exhaust passage 44b into the bypass passage 50 is the first flow rate: 8 (m ３ / min) to a second flow rate smaller than the first flow rate: 0 (m ３ / min). As a result, the control unit 61 reduces the flow rate of the gas discharged from the recovery cups 40 in the plurality of substrate processing units 1a and 1b from 10 (m ３ / min) to 6 (m ３ / min) in one batch.

[0042] Thus, in the substrate processing apparatus 1 according to the second embodiment, by changing the flow rate of the gas flowing from the common exhaust passage 44b into the bypass passage 50, the flow rates of the gases discharged from the recovery cups 40 in the plurality of substrate processing units 1a and 1b are changed in one batch. As a result, the substrate processing apparatus 1 can change the exhaust amounts from the recovery cups 40 in the plurality of substrate processing units 1a and 1b in one batch without changing the flow direction of the airflow toward the recovery cups 40. Therefore, according to the substrate processing apparatus 1, it is possible to suppress the disturbance of the downflow accompanying the change in the exhaust amount from the recovery cups 40 in the plurality of substrate processing units 1a and 1b. Further, according to the substrate processing apparatus 1, since it is possible to suppress the exhausts of the plurality of substrate processing units 1a and 1b from interfering with each other, it is possible to reduce the variation in the processing results (for example, film thickness) between the plurality of substrate processing units 1a and 1b.

[0043] (Third Embodiment) FIG. 8 is a diagram showing the configuration of a substrate processing apparatus according to the third embodiment. As shown in FIG. 8, the substrate processing apparatus 1 according to the third embodiment includes a plurality (here, two) of flow rate changing units 45 (an example of a second changing unit). The plurality of flow rate changing units 45 are provided in the plurality of individual exhaust passages 44a, respectively. The plurality of flow rate changing units 45 are, for example, dampers, and change the flow rate of the gas flowing through the plurality of individual exhaust passages 44a. The opening degree of the flow rate changing unit 45 as a damper can be changed, for example, in the range of 0° to 90°, where 0° makes the individual exhaust passage 44a fully open, and 90° makes the individual exhaust passage 44a fully closed.

[0044] Next, the contents of the exhaust volume change processing according to the third embodiment will be described. The control unit 61 individually controls a plurality of flow rate change units 45 to change the flow rate of gas flowing through a plurality of individual exhaust passages 44a, thereby individually changing the flow rate of gas discharged from the recovery cups 40 in a plurality of substrate processing units 1a and 1b. For example, the control unit 61 reduces the flow rate of gas flowing through the individual exhaust passage 44a connected to the recovery cup 40 in the substrate processing unit 1a, while maintaining the flow rate of gas flowing through the individual exhaust passage 44a connected to the substrate processing unit 1b. As a result, the control unit 61 can reduce only the flow rate of gas discharged from the recovery cup 40 in the substrate processing unit 1a.

[0045] Here, a specific example of the exhaust volume change process according to the third embodiment will be described with reference to Figures 9 and 10. Figures 9 and 10 show an example of the gas flow rates in the intake passage 12, exhaust passage 44, and bypass passage 50 after the exhaust volume change process has been performed.

[0046] As shown in Figure 9, in the exhaust volume change process, the control unit 61 individually controls a plurality of flow rate change units 45 to change the flow rate of gas flowing through a plurality of individual exhaust passages 44a, thereby individually changing the flow rate of gas discharged from the recovery cups 40 in the plurality of substrate processing units 1a and 1b. For example, in the example shown in Figure 9, the control unit 61 sets the flow rate of gas flowing through the individual exhaust passage 44a connected to the recovery cup 40 in the substrate processing unit 1a to a first flow rate: 10 (m ３ Second flow rate ( / min) smaller than the first flow rate: 6 (m ３ The control unit 61 reduces the flow rate of the gas flowing through the individual exhaust passage 44a connected to the substrate processing unit 1b to a first flow rate: 10 (m / min). ３ Maintain the current at / min). This allows the control unit 61 to reduce only the flow rate of gas discharged from the recovery cup 40 in the substrate processing unit 1a.

[0047] Furthermore, for example, in the example shown in Figure 10, the control unit 61 sets the flow rate of the gas flowing through the individual exhaust passage 44a connected to the recovery cup 40 in the substrate processing unit 1b to a first flow rate: 10 (m ３ Second flow rate ( / min) smaller than the first flow rate: 6 (m ３The control unit 61 reduces the flow rate of the gas flowing through the individual exhaust passage 44a connected to the substrate processing unit 1a to a first flow rate: 10 (m / min). ３ Maintain the current at ( / min). This allows the control unit 61 to reduce only the flow rate of gas discharged from the recovery cup 40 in the substrate processing unit 1b.

[0048] As described above, in the substrate processing apparatus 1 according to the third embodiment, the flow rate of gas flowing through multiple individual exhaust passages 44a is changed by individually controlling multiple flow rate changing units 45, thereby individually changing the flow rate of gas discharged from the recovery cups 40 in multiple substrate processing units 1a and 1b. As a result, the substrate processing apparatus 1 can individually change the amount of exhaust gas from the recovery cups 40 in multiple substrate processing units 1a and 1b without changing the flow direction of the airflow toward the recovery cups 40. Therefore, the substrate processing apparatus 1 can suppress downflow disturbances associated with changes in the amount of exhaust gas from the recovery cups 40 in multiple substrate processing units 1a and 1b.

[0049] (Fourth Embodiment) Figure 11 is a diagram showing the configuration of a substrate processing apparatus according to the fourth embodiment. As shown in Figure 11, in the substrate processing apparatus 1 according to the fourth embodiment, the air supply passage 12 branches into a plurality (in this case, two) of branch air supply passages 12a downstream of the connection point with the bypass passage 50. The plurality of branch air supply passages 12a are connected to the FFU 11 in a plurality of regions R, each corresponding to a recovery cup 40 in a plurality of substrate processing units 1a, 1b (in this case, two).

[0050] The FFU 11 supplies gas from multiple branch air supply passages 12a in multiple regions R to form a downward airflow toward the recovery cup 40.

[0051] Furthermore, the substrate processing apparatus 1 according to the fourth embodiment includes a plurality (in this case, two) of flow rate changing units 14 (an example of a third changing unit). The plurality of flow rate changing units 14 are each provided in a plurality of branch air supply passages 12a. The plurality of flow rate changing units 14 change the flow rate of the gas supplied from the plurality of branch air supply passages 12a to the FFU 11 in a plurality of regions R.

[0052] Next, the contents of the exhaust volume change process according to the fourth embodiment will be described. The control unit 61 individually controls a plurality of flow rate changing units 45 to change the flow rate of gas flowing through a plurality of individual exhaust passages 44a, and also individually controls a plurality of flow rate changing units 14 to change the flow rate of gas supplied from the FFU 11 in a plurality of regions R.

[0053] Here, a specific example of the exhaust volume change process according to the fourth embodiment will be described with reference to Figure 12. Figure 12 is a diagram showing an example of the gas flow rates in the intake passage 12, exhaust passage 44, and bypass passage 50 after the exhaust volume change process has been performed.

[0054] As shown in Figure 12, in the exhaust volume change process, the control unit 61 individually controls multiple flow rate changing units 45 to change the flow rate of gas flowing through multiple individual exhaust passages 44a, thereby individually changing the flow rate of gas discharged from the recovery cups 40 in multiple substrate processing units 1a and 1b. In addition, the control unit 61 individually controls multiple flow rate changing units 14 to change the flow rate of gas supplied from the FFU 11 in multiple regions R. In the example shown in Figure 12, the control unit 61 sets the flow rate of gas supplied from the FFU 11 to a first flow rate: 10 (m ３ Second flow rate ( / min) smaller than the first flow rate: 6 (m ３ The control unit 61 reduces the flow rate of the gas supplied from the FFU 11 to a first flow rate: 10 (m / min) in the region R corresponding to the substrate processing unit 1b. ３ Maintain the current at / min). This allows the control unit 61 to reduce only the flow rate of gas discharged from the recovery cup 40 in the substrate processing unit 1a.

[0055] As described above, in the substrate processing apparatus 1 according to the fourth embodiment, the flow rate of the gas flowing through the multiple individual exhaust passages 44a is changed by individually controlling a plurality of flow rate changing units 45, and the flow rate of the gas supplied from the FFU 11 is changed in multiple regions R by individually controlling a plurality of flow rate changing units 14. As a result, the substrate processing apparatus 1 can individually change the amount of exhaust from the recovery cup 40 in the multiple substrate processing units 1a and 1b without changing the flow direction of the airflow toward the recovery cup 40. Therefore, the substrate processing apparatus 1 can suppress downflow disturbances associated with changes in the amount of exhaust from the recovery cup 40 in the multiple substrate processing units 1a and 1b.

[0056] (Fifth Embodiment) Figure 13 is a diagram showing the configuration of a substrate processing apparatus according to the fifth embodiment. As shown in Figure 13, the configuration of the bypass path 50 in the substrate processing apparatus 1 according to the fifth embodiment differs from that of the substrate processing apparatus 1 according to the first embodiment.

[0057] Specifically, in the substrate processing apparatus 1 according to the fifth embodiment, the bypass passage 50 is a passage that diverts a portion of the gas flowing through the air supply passage 12 to the exhaust passage 44. The bypass passage 50 is provided with a flow rate changing section 53. The flow rate changing section 53 is, for example, a damper, and changes the flow rate of the gas flowing through the bypass passage 50, thereby changing the flow rate of the gas flowing from the air supply passage 12 to the bypass passage 50. The opening degree of the flow rate changing section 53 as a damper can be changed, for example, in the range of 0° to 90°, where 0° is the bypass passage 50 fully open and 90° is the bypass passage 50 fully closed.

[0058] Next, the contents of the exhaust volume change process according to the fifth embodiment will be described. The control unit 61 controls the flow rate change unit 51 to change the flow rate of gas flowing from the intake passage 12 to the bypass passage 50, thereby changing the flow rate of gas discharged from the recovery cup 40. Specifically, the control unit 61 increases the flow rate of gas flowing from the intake passage 12 to the bypass passage 50 from the third flow rate to a fourth flow rate which is greater than the third flow rate. As a result, the control unit 61 can reduce the flow rate of gas discharged from the recovery cup 40.

[0059] Here, a specific example of the exhaust volume change process according to the fifth embodiment will be described with reference to Figures 14 and 15. Figure 14 is a diagram showing an example of the gas flow rates through the intake passage 12, exhaust passage 44, and bypass passage 50 before the exhaust volume change process. Figure 15 is a diagram showing an example of the gas flow rates through the intake passage 12, exhaust passage 44, and bypass passage 50 after the exhaust volume change process has been performed.

[0060] As shown in Figures 14 and 15, in the exhaust volume change process, the control unit 61 controls the flow rate change unit 53 to change the flow rate of gas flowing from the intake passage 12 to the bypass passage 50, thereby changing the flow rate of gas discharged from the recovery cup 40. For example, in the example shown in Figures 14 and 15, the control unit 61 changes the opening of the flow rate change unit 53 from 90° to 0°, thereby changing the flow rate of gas flowing from the intake passage 12 to the bypass passage 50 to a third flow rate: 0 (m ３ From / min) to a fourth flow rate greater than the third flow rate: 4 (m ３ The flow rate of gas discharged from the recovery cup 40 is increased to 10 (m / min). As a result, the control unit 61 increases the flow rate of gas discharged from the recovery cup 40 to 10 (m / min). ３ / min) to 6(m ３ It can be changed to / min).

[0061] Thus, in the substrate processing apparatus 1 according to the fifth embodiment, the flow rate of gas discharged from the recovery cup 40 is changed by changing the flow rate of gas flowing from the air supply passage 12 to the bypass passage 50. As a result, the substrate processing apparatus 1 can change the amount of exhaust gas from the recovery cup 40 without changing the flow direction of the airflow toward the recovery cup 40. Therefore, the substrate processing apparatus 1 can suppress downflow turbulence associated with changes in the amount of exhaust gas.

[0062] (Sixth Embodiment) Figure 16 is a diagram showing the configuration of a substrate processing apparatus according to the sixth embodiment. As shown in Figure 16, the configuration of the bypass path 50 in the substrate processing apparatus 1 according to the sixth embodiment differs from that of the second embodiment.

[0063] Specifically, in the substrate processing apparatus 1 according to the sixth embodiment, the bypass passage 50 is a passage that diverts a portion of the gas flowing through the air supply passage 12 to the common exhaust passage 44b. The bypass passage 50 is provided with a flow rate changing section 53. The flow rate changing section 53 is, for example, a damper, and changes the flow rate of the gas flowing through the bypass passage 50, thereby changing the flow rate of the gas flowing from the air supply passage 12 to the bypass passage 50. The opening degree of the flow rate changing section 53 as a damper can be changed, for example, in the range of 0° to 90°, where 0° is the bypass passage 50 fully open and 90° is the bypass passage 50 fully closed.

[0064] Next, the contents of the exhaust volume change process according to the sixth embodiment will be described. The control unit 61 controls the flow rate change unit 53 to change the flow rate of gas flowing from the intake passage 12 to the bypass passage 50, thereby changing the flow rate of gas discharged from the recovery cups 40 in multiple substrate processing units 1a and 1b all at once. For example, the control unit 61 increases the flow rate of gas flowing from the intake passage 12 to the bypass passage 50 from a third flow rate to a fourth flow rate which is greater than the third flow rate. As a result, the control unit 61 can reduce the flow rate of gas discharged from the recovery cups 40 in multiple substrate processing units 1a and 1b all at once.

[0065] Thus, in the substrate processing apparatus 1 according to the sixth embodiment, the flow rate of gas flowing from the supply passage 12 to the bypass passage 50 is changed, thereby simultaneously changing the flow rate of gas discharged from the recovery cups 40 in multiple substrate processing units 1a and 1b. As a result, the substrate processing apparatus 1 can simultaneously change the exhaust volume from the recovery cups 40 in multiple substrate processing units 1a and 1b without changing the flow direction of the airflow toward the recovery cups 40. Therefore, the substrate processing apparatus 1 can suppress downflow disturbances associated with changing the exhaust volume from the recovery cups 40 in multiple substrate processing units 1a and 1b.

[0066] (Seventh Embodiment) Figure 17 is a diagram showing the configuration of a substrate processing apparatus according to the seventh embodiment. As shown in Figure 17, the configuration of the bypass path 50 in the substrate processing apparatus 1 according to the seventh embodiment differs from that of the substrate processing apparatus 1 according to the first embodiment.

[0067] Specifically, the bypass passage 50 is equipped with, in order from the upstream side, a flow rate changing section 51, a filter 52, a pressure boosting valve 54, a tank 55, and a flow rate control valve 56. The pressure boosting valve 54 compresses the gas flowing through the bypass passage 50 and passing through the filter 52. The tank 55 stores the gas compressed by the pressure boosting valve 54. The flow rate control valve 56 adjusts the flow rate of gas flowing from the tank 55 to the bypass passage 50 downstream of the tank 55.

[0068] Thus, in the substrate processing apparatus 1 according to the seventh embodiment, the gas flowing through the bypass passage 50 and passing through the filter 52 is compressed by the pressure boosting valve 54 and stored in the tank 55, thereby reducing the flow velocity of the gas flowing through the bypass passage 50 and passing through the filter 52. Therefore, according to the substrate processing apparatus 1 according to the seventh embodiment, gas purification by the filter 52 can be performed efficiently.

[0069] As described above, the substrate processing apparatus according to the embodiment (for example, substrate processing apparatus 1) comprises a substrate processing unit (for example, substrate processing unit 1a), an airflow forming unit (for example, FFU 11), an exhaust passage (for example, exhaust passage 44), a bypass passage (for example, bypass passage 50), a first modification unit (for example, flow rate modification unit 51), and a control unit (for example, control unit 61). The substrate processing unit has a holding unit (for example, holding unit 21) for holding a substrate (for example, wafer W), and a cup (for example, recovery cup 40) surrounding the side of the holding unit. The airflow forming unit supplies gas from above the cup and forms a downward airflow toward the cup. The exhaust passage is connected to the cup, and the gas discharged from the cup flows through it. The bypass passage connects the exhaust passage to a gas supply passage (for example, supply passage 12) to the airflow forming unit. The first modification unit changes the flow rate of the gas flowing through the bypass passage. The control unit controls the first modification unit to change the flow rate of gas flowing from the exhaust passage or intake passage to the bypass passage, thereby changing the flow rate of gas discharged from the cup. Therefore, according to the substrate processing apparatus of this embodiment, it is possible to suppress downflow disturbances that occur when the exhaust volume is changed.

[0070] The embodiments disclosed herein should be considered in all respects to be illustrative and not restrictive. Indeed, the embodiments described above can be embodied in a variety of forms. Furthermore, the embodiments described above may be omitted, replaced, or modified in various ways without departing from the scope and spirit of the appended claims.

[0071] 1 Substrate Processing Equipment 1a, 1b Substrate Processing Unit 10 Chamber 12 Air Supply Passage 12a Branch Air Supply Passage 13 Gas Supply Source 14, 45, 51, 53 Flow Rate Changing Unit 20 Substrate Holding Mechanism 21 Holding Unit 22 Support Column Unit 23 Drive Unit 30 Liquid Supply Unit 31 Nozzle 32 Processing Liquid Supply Source 40 Recovery Cup 41 Drain Port 42 Drain Passage 43 Exhaust Port 44 Exhaust Passage 44a Individual Exhaust Passage 44b Common Exhaust Passage 50 Bypass Passage 52 Filter 54 Pressure Boosting Valve 55 Tank 56 Flow Rate Adjustment Valve 60 Control Device 61 Control Unit 62 Memory Unit R Area W Wafer

Claims

1. A substrate processing device comprising: a substrate processing unit having a holding unit for holding a substrate and a cup surrounding the sides of the holding unit; an airflow forming unit that supplies gas from above the cup to form a downward airflow toward the cup; an exhaust passage connected to the cup through which the gas discharged from the cup flows; a bypass passage connecting the exhaust passage and a gas supply passage to the airflow forming unit; a first modification unit that changes the flow rate of the gas flowing through the bypass passage; and a control unit that controls the first modification unit to change the flow rate of the gas flowing from the exhaust passage or the supply passage into the bypass passage, thereby changing the flow rate of the gas discharged from the cup.

2. The substrate processing apparatus according to claim 1, wherein the bypass passage is a passage that returns a portion of the gas flowing through the exhaust passage to the intake passage, and further comprises a filter provided in the bypass passage for purifying the gas flowing through the bypass passage.

3. The substrate processing apparatus according to claim 1, wherein the bypass passage is a flow path that diverts a portion of the gas flowing through the air intake passage to the exhaust passage.

4. The substrate processing apparatus according to claim 1, comprising a plurality of substrate processing units, wherein the exhaust passage comprises a plurality of individual exhaust passages connected to the cups in the plurality of substrate processing units, and a common exhaust passage connected to the plurality of individual exhaust passages, through which the gas discharged from the cups in the plurality of substrate processing units flows, the bypass passage connects the common exhaust passage and the supply passage, and the control unit controls the first modification unit to change the flow rate of gas flowing from the common exhaust passage or the supply passage to the bypass passage, thereby changing the flow rate of gas discharged from the cups in the plurality of substrate processing units all at once.

5. A substrate processing apparatus according to claim 1, comprising a plurality of substrate processing units, wherein the exhaust passage comprises a plurality of individual exhaust passages connected to the cups in the plurality of substrate processing units, and a common exhaust passage connected to the plurality of individual exhaust passages, through which the gas discharged from the cups in the plurality of substrate processing units flows, the bypass passage connects the common exhaust passage and the supply passage, and further comprises a plurality of second modification units provided in each of the plurality of individual exhaust passages for changing the flow rate of the gas flowing through the plurality of individual exhaust passages, and the control unit individually controls the plurality of second modification units to change the flow rate of the gas flowing through the plurality of individual exhaust passages, thereby individually changing the flow rate of the gas discharged from the cups in the plurality of substrate processing units.

6. The substrate processing apparatus according to claim 5, wherein the air supply passage branches into a plurality of branch air supply passages downstream of the connection point with the bypass passage, the plurality of branch air supply passages are connected to the airflow forming section in a plurality of regions corresponding to the cups in the plurality of substrate processing sections, the airflow forming section supplies gas from the plurality of branch air supply passages in the plurality of regions to form a downward airflow toward the cups, and further comprises a plurality of third modifying sections provided in each of the plurality of branch air supply passages for changing the flow rate of gas supplied from the plurality of branch air supply passages to the airflow forming section in the plurality of regions, the control section individually controls the plurality of second modifying sections to change the flow rate of gas flowing through the plurality of individual exhaust passages, and individually controls the plurality of third modifying sections to change the flow rate of gas supplied from the airflow forming section in the plurality of regions.

7. A substrate processing apparatus comprising: a substrate processing unit having a holding unit for holding a substrate and a cup surrounding the sides of the holding unit; an airflow forming unit supplying gas from above the cup to form an airflow toward the cup; an exhaust passage connected to the cup through which gas discharged from the cup flows; a bypass passage connecting the exhaust passage and a gas supply passage to the airflow forming unit; and a first modification unit for changing the flow rate of gas flowing through the bypass passage, wherein the substrate processing apparatus includes a step of changing the flow rate of gas discharged from the cup by changing the flow rate of gas flowing from the exhaust passage or the supply passage into the bypass passage.

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