Substrate processing system and transport method

Abstract

This plasma processing device comprises a control unit. The control unit is configured so as to execute steps (a), (b), (c), (d), and (e). Step (a) involves transporting a ring member to a transport position. Step (b) involves lifting the ring member by means of a plurality of lifter pins such that the ring member is self-guided so that the tips of the plurality of lifter pins are respectively positioned inside a plurality of recesses in the ring member. Step (c) involves lowering the ring member onto an end effector. Step (d) involves detecting the horizontal position of the ring member by means of a first detector and obtaining a first correction value subsequent to step (c). Step (e) involves detecting the rotational position of the ring member by means of a second detector and obtaining a second correction value subsequent to step (c).

Description

Substrate Processing System and Transfer Method

[0001] Exemplary embodiments of the present disclosure relate to a substrate processing system and a transfer method.

[0002] A substrate processing system for transferring a ring member is known. The substrate processing system includes a transfer module, a chamber, a substrate support, and a control unit. The substrate support is disposed within the chamber. The substrate support has a ring support surface. The ring member is placed on the ring support surface. In Patent Document 1 below, the control unit is configured to control the transfer module to place the ring member on the ring support surface after a cleaning process on the ring support surface.

[0003] Japanese Patent Application Laid-Open No. 2018-10992

[0004] The present disclosure provides a technique for adjusting the position of a ring member.

[0005] In one exemplary embodiment, a substrate processing system is provided. The substrate processing system comprises a chamber, a substrate support, a transport module, a first detector, a second detector, and a control unit. The chamber provides a processing space inside. The substrate support is located within the processing space. The transport module has a transport robot. The transport robot has an end effector. The end effector is configured to support a ring member. The transport robot is configured to transport the ring member to a transport position in the processing space along a transport path. The first detector includes the transport path in its detection range. The first detector is configured to detect the horizontal position of the ring member. The horizontal position includes the relative position of the ring member to the first detector in the horizontal direction. The second detector is configured to detect the rotational position of the ring member. The rotational position includes the relative position of the ring member to the second detector in the circumferential direction about the central axis of the ring member. The control unit is configured to control the substrate support and the transport module. The substrate support has a substrate support surface, a ring support surface, a plurality of lifter pins, and an actuator. The substrate support surface is configured to support the substrate placed on it. The ring support surface extends around the substrate support surface and is configured to support the ring member placed on it. Multiple lifter pins are configured to protrude upward from the ring support surface. The actuator is configured to move the multiple lifter pins up and down. The ring member provides multiple recesses corresponding to each of the multiple lifter pins. The control unit is configured to perform (a), (b), (c), (d), and (e). (a) is the step of placing the ring member on the end effector and controlling the transport module to transport the ring member to the transport position. (b) is the step of controlling the actuator to lift the ring member with the multiple lifter pins so that the ring member is guided by itself so that the tips of the multiple lifter pins are positioned in the multiple recesses of the ring member located above the ring support surface. (c) is the step of controlling the actuator to lower the ring member, which has been lifted by the multiple lifter pins, onto the end effector.(d) is a step after (c) in which the horizontal position of the ring member placed on the end effector is detected by a first detector and a first correction value is obtained for correcting the transport position. (e) is a step after (c) in which the rotational position of the ring member is detected by a second detector and a second correction value is obtained for correcting the rotational position of the ring member at the transport position.

[0006] According to one exemplary embodiment, the position of the ring member is adjusted.

[0007] This is a diagram showing a substrate processing system according to one exemplary embodiment. This is a diagram showing an end effector according to one exemplary embodiment. This is a diagram illustrating an example of the configuration of a plasma processing system. This is a diagram illustrating an example of the configuration of a capacitively coupled plasma processing apparatus. This is a partially enlarged cross-sectional view of the substrate support portion of a plasma processing apparatus according to one exemplary embodiment. This is a diagram schematically showing the configuration of a ring member according to one exemplary embodiment. Figures 7(a) to 7(e) are diagrams illustrating an example of the process of acquiring a first correction value by a first detector. This is a diagram illustrating an example of the process of acquiring a second correction value by a second detector. This is a partially enlarged cross-sectional view of the substrate support portion according to another exemplary embodiment. This is a flowchart showing a transport method according to one exemplary embodiment. This is a flowchart showing a process that is repeated in a transport method according to one exemplary embodiment. This is a flowchart showing a transport method according to another exemplary embodiment.

[0008] Various exemplary embodiments will be described in detail below with reference to the drawings. In each drawing, the same or corresponding parts will be denoted by the same reference numerals.

[0009] Figure 1 shows a substrate processing system according to one exemplary embodiment. As shown in Figure 1, the substrate processing system PS comprises at least one process module, a transport module TM, a first detector CM1, a second detector CM2, and a control unit 2. The substrate processing system PS may also comprise a plurality of process modules PM1 to PM6 as at least one process module. The substrate processing system PS may also comprise a plurality of first detectors CM1. In one embodiment, the substrate processing system PS may further comprise a third detector CM3, load ports LP1 to LP4, an aligner AN, load lock modules LL1 and LL2, and a ring stocker SR.

[0010] The substrate processing system PS may further include a loader module LM. The loader module LM is an example of an atmospheric transport module. The loader module LM includes an atmospheric chamber ACH. The pressure in the atmospheric chamber ACH of the loader module LM is set to atmospheric pressure. The loader module LM may have an FFU (Fan Filter Unit). The loader module LM is, for example, an EFEM (Equipment Front End Module). The loader module LM is positioned between each of the load ports LP1 to LP4 and each of the load lock modules LL1 and LL2. The load ports LP1 to LP4 are arranged along one of a pair of edges along the longitudinal direction of the loader module LM. The load lock modules LL1 and LL2 are arranged along the other of a pair of edges along the longitudinal direction of the loader module LM. Each of the load ports LP1 to LP4 is configured to support a cassette CST placed on top of it. The cassette CST is a container that houses multiple circuit boards W inside. The cassette CST is, for example, a FOUP (Front-Opening Unified Pod).

[0011] The loader module LM includes a transport robot TR3. The transport robot TR3 is located inside the atmospheric chamber ACH of the loader module LM. The transport robot TR3 may also include an articulated arm AR31 and an end effector FK31. The end effector FK31 is attached to the tip of the articulated arm AR31 and is configured to support a substrate W or ring member R placed on it. The transport robot TR3 transports the substrate W or ring member R based on operation instructions output by the control unit 2, which will be described later. The transport robot TR3 transports the substrate W or ring member R between any two of the following: cassette CST, load lock modules LL1, LL2, aligner AN, ring stocker SR, and the second detector CM2, which will be described later.

[0012] In one example, the ring stocker SR is positioned along the edge of the loader module LM in the short direction. The ring stocker SR may also be positioned along the edge of the loader module LM in the longitudinal direction. The ring stocker SR may also be positioned inside the loader module LM. The ring stocker SR is configured to accommodate ring members within it.

[0013] In one embodiment, the aligner AN is located within the ring stocker SR. The aligner AN may be located along one of a pair of edges of the loader module LM along its short direction. The aligner AN may be located along the edge of the loader module LM along its longitudinal direction. The aligner AN may be located within the atmospheric chamber ACH of the loader module LM. In one embodiment, the second detector CM2 is located within the aligner AN.

[0014] Each of the load lock modules LL1 and LL2 is positioned between the transport module TM and the loader module LM. Each of the load lock modules LL1 and LL2 provides a pressure reducing chamber DCH1 and DCH2. Each of the load lock modules LL1 and LL2 is connected to the loader module LM via a gate valve G3. Each of the load lock modules LL1 and LL2 is connected to the transport module TM via a gate valve G2.

[0015] The transport module TM may include a vacuum chamber VCH. In the example shown in Figure 1, the transport module TM is configured to transport the substrate W through a reduced-pressure space within the vacuum chamber VCH. The vacuum chamber VCH is connected to load lock modules LL1 and LL2, respectively, via gate valve G2. Process modules PM1 to PM6 are connected to the vacuum chamber VCH via gate valve G1.

[0016] The first detector CM1 may include optical sensors 81a and 81b located within the vacuum chamber VCH. The optical sensors 81a and 81b include the area above them in their detection range. In the example shown in Figure 1, the first detector CM1 is located in front of the gate valve G1 in the vacuum chamber VCH. The first detector CM1 may be located between each processing chamber 10 of process modules PM1 to PM6 and the vacuum chamber VCH. In one example, if the processing chamber 10 is connected to the vacuum chamber VCH via a connector, the first detector CM1 may be located inside the connector located behind the gate valve G1. The first detector CM1 may be located adjacent to the gate valve G1.

[0017] The transport module TM includes a transport robot TR configured to transport a ring member R. In one example, the transport robot TR is located inside a vacuum chamber VCH. The transport robot TR has end effectors configured to support a substrate W or a ring member R. In the example shown in Figure 1, the transport robot TR has articulated arms AR11, AR12 and end effectors FK11, FK12. End effector FK11 is attached to the tip of articulated arm AR11 and is configured to support a substrate W or a ring member R placed on it. End effector FK12 is attached to the tip of articulated arm AR12 and is configured to support a substrate W or a ring member R placed on it. The transport robot TR transports the substrate W or a ring member R based on operation instructions output by a control unit 2, which will be described later.

[0018] The transport robot TR holds the substrate W or ring member R with end effectors FK11 and FK12. The transport robot TR transports the substrate W or ring member R through any two of the paths between the load lock modules LL1 and LL2, the process modules PM1 to PM6, and the vacuum chamber VCH of the transport module TM. The transport robot TR is configured to transport the ring member R to a transport position in the processing space 10s along the transport path P. The processing space 10s will be described later.

[0019] In one embodiment, each of the process modules PM1 to PM6 is configured to perform a dedicated process on the substrate W. At least one of the process modules PM1 to PM6 is a substrate processing system, such as the plasma processing apparatus 1 described later.

[0020] The control unit 2 is, for example, a computer. The control unit 2 may consist of a CPU (Central Processing Unit), RAM (Random Access Memory), ROM (Read Only Memory), and auxiliary storage devices, etc. The CPU operates based on a program stored in the ROM or auxiliary storage device and controls each part of the board processing system PS.

[0021] The substrate processing system PS is not necessarily limited to the one shown in Figure 1. For example, the number of process modules and / or transport modules in the substrate processing system may differ from those shown in Figure 1. For example, the number of load ports may be five or more, and the number of load ports may be any number. The substrate processing system may also be a system in which multiple module groups, each including process modules and load lock modules, are connected to a loader module (a so-called loader type system). The substrate processing system may also be a system in which two or more process modules are arranged around a transport module and connected so as to surround the transport module (a so-called cluster type system).

[0022] Refer to Figure 2 below. In one embodiment, the substrate processing system PS may include a third detector CM3. The third detector CM3 may be located, for example, within an end effector. Figure 2 shows an end effector according to one exemplary embodiment. Figure 2 shows the configuration of an end effector FK11 as an example, but it may also be the configuration of an end effector FK12. The end effector FK11 has a horseshoe shape when viewed from the vertical. In one embodiment, the end effector FK11 includes a main body FKM and a pair of tip portions FKB. The pair of tip portions FKB protrude from the main body FKM. A gap is defined between the pair of tip portions FKB. A substrate W or a ring member R is supported on the end effector FK11 such that its central axis passes through the gap.

[0023] In one embodiment, the third detector CM3 includes a pair of distance sensors FS1 and FS2. The pair of distance sensors FS1 and FS2 may be connected to the transport module TM and / or the control unit 2. In one example, the distance sensors FS1 and FS2 are optical fiber displacement sensors. In one embodiment, the pair of distance sensors FS1 and FS2 are respectively arranged on a pair of tip sections FKB. The tip FSa of each of the pair of distance sensors FS1 and FS2 is located on the pair of tip sections FKB.

[0024] Each of the distance sensors FS1 and FS2 measures the distance between its tip FSa and the object. Each of the distance sensors FS1 and FS2 emits measurement light to the object via its tip FSa and receives the reflected light. A unit controller (not shown) connected to the distance sensors FS1 and FS2 measures the distance from the tip FSa to the object. The unit controller may be part of the transport module TM or the control unit 2. The tip FSa of the distance sensors FS1 and FS2 are positioned to irradiate the measurement light downwards onto the end effector FK11. In one example, when the end effector FK11 is moved horizontally and the distance between the tip FSa of the distance sensors FS1 and FS2 and the object becomes close, the third detector CM3 detects the horizontal position of the object. The position of the object may be determined by the coordinates of the tip FSa of each distance sensor FS1 and FS2 on the transport module TM when the distance between the tip FSa of each distance sensor FS1 and FS2 and the object is close.

[0025] Figure 3 is a diagram illustrating an example configuration of a plasma processing system. In one embodiment, the plasma processing system includes a plasma processing apparatus 1 and a control unit 2. The plasma processing system is an example of a substrate processing system, and the plasma processing apparatus 1 is an example of a substrate processing apparatus. The plasma processing apparatus 1 includes a plasma processing chamber 10, a substrate support unit 11, and a plasma generation unit 12. The plasma processing chamber 10 has a plasma processing space. The plasma processing chamber 10 also has at least one gas supply port for supplying at least one processing gas to the plasma processing space, and at least one gas outlet for discharging gas from the plasma processing space. The gas supply port is connected to a gas supply unit 20, which will be described later, and the gas outlet is connected to an exhaust system 40, which will be described later. The substrate support unit 11 is located in the plasma processing space and has a substrate support surface for supporting a substrate.

[0026] The plasma generation unit 12 is configured to generate plasma from at least one processing gas supplied into the plasma processing space. The plasma formed in the plasma processing space may be capacitively coupled plasma (CCP), inductively coupled plasma (ICP), ECR (Electron Cyclotron Resonance) plasma, helicon wave excited plasma (HWP), or surface wave plasma (SWP), etc. Various types of plasma generation units, including AC (Alternating Current) plasma generation units and DC (Direct Current) plasma generation units, may also be used. In one embodiment, the AC signal (AC power) used in the AC plasma generation unit has a frequency in the range of 100 kHz to 10 GHz. Therefore, the AC signal includes an RF (Radio Frequency) signal and a microwave signal. In one embodiment, the RF signal has a frequency in the range of 100 kHz to 150 MHz.

[0027] The control unit 2 processes computer-executable instructions that cause the plasma processing apparatus 1 to perform the various processes described herein. The control unit 2 may be configured to control the elements of the plasma processing apparatus 1 to perform the various processes described herein. In one embodiment, part or all of the control unit 2 may be included in the plasma processing apparatus 1. The control unit 2 is implemented, for example, by a computer 2a. The control unit 2 may include a processing unit 2a1, a storage unit 2a2, and a communication interface 2a3. The functions realized by the processing unit 2a1 described herein may be implemented in a circuit or processing circuit, including a general-purpose processor, an application-specific processor, integrated circuits, ASICs (Application Specific Integrated Circuits), a CPU (Central Processing Unit), a conventional circuit, and / or a combination thereof, programmed to realize the described functions. The processor is considered to be a circuit or processing circuit, including transistors and other circuits. The processor may be a programmed processor that executes a program stored in the storage unit 2a2. This program may be pre-stored in the storage unit 2a2 or retrieved via a medium when needed. The acquired program is stored in the storage unit 2a2 and read from the storage unit 2a2 and executed by the processing unit 2a1. The medium may be various storage media readable by the computer 2a, or it may be a communication line connected to the communication interface 2a3. The storage unit 2a2 may include RAM (Random Access Memory), ROM (Read Only Memory), HDD (Hard Disk Drive), SSD (Solid State Drive), or a combination thereof. The communication interface 2a3 may communicate with the plasma processing device 1 via a communication line such as a LAN (Local Area Network).In this disclosure, circuits, units, and means are hardware programmed to perform or configured to perform the functions described. Such hardware may be any hardware described in this disclosure, or any hardware known to be programmed to perform or execute the functions described. If such hardware is a processor that is considered to be a type of circuit, such circuit, means, or unit is a combination of hardware and software used to constitute such hardware and / or processor.

[0028] The following describes an example configuration of a capacitively coupled plasma processing apparatus as an example of a plasma processing apparatus 1. Figure 4 is a diagram illustrating an example configuration of a capacitively coupled plasma processing apparatus.

[0029] The capacitively coupled plasma processing apparatus 1 includes a plasma processing chamber 10, a gas supply unit 20, a power supply system 30, and an exhaust system 40. The plasma processing apparatus 1 also includes a substrate support unit 11 and a gas introduction unit. The gas introduction unit is configured to introduce at least one processing gas into the plasma processing chamber 10. The gas introduction unit includes a shower head 13. The substrate support unit 11 is located inside the plasma processing chamber 10. The shower head 13 is located above the substrate support unit 11. In one embodiment, the shower head 13 constitutes at least a portion of the ceiling of the plasma processing chamber 10. The plasma processing chamber 10 has a plasma processing space 10s defined by the shower head 13, the side walls 10a of the plasma processing chamber 10, and the substrate support unit 11. The plasma processing chamber 10 is grounded. The shower head 13 and the substrate support unit 11 are electrically insulated from the housing of the plasma processing chamber 10.

[0030] The substrate support portion 11 includes a main body portion 5 and a ring assembly 112. The main body portion 5 has a central region 5a for supporting the substrate W and an annular region 5b for supporting the ring assembly 112. A wafer is an example of a substrate W. In a plan view, the annular region 5b of the main body portion 5 surrounds the central region 5a of the main body portion 5. The substrate W is placed on the central region 5a of the main body portion 5, and the ring assembly 112 is placed on the annular region 5b of the main body portion 5 so as to surround the substrate W on the central region 5a of the main body portion 5. Therefore, the central region 5a is also called the substrate support surface for supporting the substrate W, and the annular region 5b is also called the ring support surface for supporting the ring assembly 112.

[0031] In one embodiment, the main body 5 includes a base 50 and an electrostatic chuck 51. The base 50 includes a conductive member. The conductive member of the base 50 can function as a lower electrode. The electrostatic chuck 51 is placed on the base 50. The electrostatic chuck 51 includes a ceramic member 51a and an electrostatic chuck electrode 51b placed within the ceramic member 51a. The electrostatic chuck electrode 51b is also called a clamping electrode. In one embodiment, the electrostatic chuck electrode 51b is electrically connected or coupled to a chuck power supply. The chuck power supply may be a DC power supply or an AC power supply. The ceramic member 51a has a central region 5a. In one embodiment, the ceramic member 51a also has an annular region 5b. Other members surrounding the electrostatic chuck 51, such as an annular electrostatic chuck or an annular insulating member, may also have an annular region 5b. In this case, the ring assembly 112 may be placed on an annular electrostatic chuck or an annular insulating member, or on both the electrostatic chuck 51 and the annular insulating member. Furthermore, at least one bias electrode, electrically connected to or coupled to a power supply 31 and / or power supply 32 (described later), may be placed within the ceramic member 51a. In this case, at least one bias electrode functions as a lower electrode. Also, the conductive member of the base 50 and the bias electrode within the ceramic member 51a may function as multiple lower electrodes. In one embodiment, the first voltage generation unit 32a, which functions as a voltage pulse generation unit (described later), is electrically connected to or coupled to the bias electrode within the ceramic member 51a, and the first RF generation unit 31a (described later) is electrically connected to or coupled to the conductive member of the base 50. Furthermore, the electrostatic chuck electrode 51b may function as a lower electrode. Therefore, the substrate support unit 11 includes at least one lower electrode.

[0032] The ring assembly 112 includes one or more annular members. In one embodiment, the one or more annular members include one or more edge rings and at least one covering ring. The edge rings are formed of a conductive or insulating material, and the covering rings are formed of an insulating material.

[0033] The substrate support section 11 may also include a temperature control module configured to adjust at least one of the electrostatic chuck 51, the ring assembly 112, and the substrate to a target temperature. The temperature control module may include a heater, a heat transfer medium, a flow path 50a, or a combination thereof. A heat transfer fluid such as brine or gas flows through the flow path 50a. In one embodiment, the flow path 50a is formed within the base 50, and one or more heaters are arranged within the ceramic member 51a of the electrostatic chuck 51. The substrate support section 11 may also include a heat transfer gas supply section configured to supply heat transfer gas to the gap between the back surface of the substrate W and the central region 5a.

[0034] The showerhead 13 is configured to introduce at least one processing gas from the gas supply unit 20 into the plasma processing space 10s. The showerhead 13 has at least one gas supply port 13a, at least one gas diffusion chamber 13b, and a plurality of gas inlet ports 13c. The processing gas supplied to the gas supply port 13a passes through the gas diffusion chamber 13b and is introduced into the plasma processing space 10s through the plurality of gas inlet ports 13c. The showerhead 13 also includes at least one upper electrode. In addition to the showerhead 13, the gas introduction unit may also include one or more side gas injectors (SGIs) attached to one or more openings formed in the side wall 10a.

[0035] The gas supply unit 20 may include at least one gas source 21 and at least one flow controller 22. In one embodiment, the gas supply unit 20 is configured to supply at least one processing gas to the shower head 13 from a corresponding gas source 21 via a corresponding flow controller 22. Each flow controller 22 may include, for example, a mass flow controller or a pressure-controlled flow controller. Furthermore, the gas supply unit 20 may include at least one flow modulation device that modulates or pulses the flow rate of at least one processing gas.

[0036] The power supply system 30 includes a power supply 31 that is electrically connected to or coupled to the plasma processing chamber 10. In one embodiment, the power supply 31 is electrically connected to or coupled to the plasma processing chamber 10 via at least one impedance matcher. The impedance matcher may be a mechanically controlled matcher or an electronically controlled matcher. The power supply 31 is configured to supply at least one RF signal (RF power) to at least one lower electrode and / or at least one upper electrode. This generates plasma from at least one processing gas supplied to the plasma processing space 10s. Therefore, the power supply 31 can function as at least part of the plasma generation unit 12. In addition, by supplying a bias RF signal to at least one lower electrode, a bias potential is generated on the substrate W, and ionic components in the formed plasma can be drawn into the substrate W.

[0037] The power supply 31 includes a first RF generation unit 31a and a second RF generation unit 31b. The first RF generation unit 31a is electrically connected or coupled to at least one lower electrode and / or at least one upper electrode and is configured to generate a source RF signal (source RF power) to generate plasma in the plasma processing space 10s. In one embodiment, the first RF generation unit 31a is electrically connected or coupled to at least one lower electrode and / or at least one upper electrode via at least one impedance matcher. In one embodiment, the source RF signal has a frequency in the range of 10 MHz to 150 MHz. In one embodiment, the first RF generation unit 31a may be configured to generate a plurality of source RF signals having different frequencies. One or more generated source RF signals are supplied to at least one lower electrode and / or at least one upper electrode.

[0038] The second RF generation unit 31b is electrically connected to or coupled to at least one lower electrode and is configured to generate a bias RF signal (bias RF power). In one embodiment, the second RF generation unit 31b is electrically connected to or coupled to at least one lower electrode via at least one impedance matcher. When the first RF generation unit 31a is electrically connected to or coupled to a lower electrode, the second RF generation unit 31b may be electrically connected to or coupled to the same lower electrode, or it may be electrically connected to or coupled to a different lower electrode. The frequency of the bias RF signal may be the same as or different from the frequency of the source RF signal. In one embodiment, the bias RF signal has a frequency lower than the frequency of the source RF signal. In one embodiment, the bias RF signal has a frequency in the range of 100 kHz to 60 MHz. In one embodiment, the second RF generation unit 31b may be configured to generate a plurality of bias RF signals having different frequencies. The generated one or more bias RF signals are supplied to at least one lower electrode. In various embodiments, at least one of the source RF signal and the bias RF signal may be pulsed.

[0039] The power supply system 30 may also include a power supply 32 that is electrically connected to or coupled to the plasma processing chamber 10. The power supply 32 includes a first voltage generation unit 32a and a second voltage generation unit 32b. In one embodiment, the first voltage generation unit 32a is electrically connected to or coupled to at least one lower electrode and is configured to generate a first voltage signal. The generated first voltage signal is applied to at least one lower electrode. In one embodiment, the second voltage generation unit 32b is electrically connected to or coupled to at least one upper electrode and is configured to generate a second voltage signal. The generated second voltage signal is applied to at least one upper electrode.

[0040] In various embodiments, the first and / or second voltage signals may be pulsed. In this case, the first voltage generation unit 32a and / or the second voltage generation unit 32b function as voltage pulse generation units configured to generate a sequence of voltage pulses. Thus, the sequence of voltage pulses is applied to at least one lower electrode and / or at least one upper electrode. In one embodiment, the sequence of voltage pulses has a plurality of cycles, each cycle including a burst of voltage pulses in a first period and a constant reference voltage in a second period. That is, in the sequence of voltage pulses, the burst of voltage pulses is repeated. The absolute value of the voltage level of the voltage pulse is greater than the absolute value of the voltage level of the reference voltage. The voltage pulse may have an arbitrary waveform having a rectangle, trapezoid, triangle, or a combination thereof, and the arbitrary waveform may change over time. The voltage pulse may have positive polarity or negative polarity. The sequence of voltage pulses may also include one or more positive voltage pulses and one or more negative voltage pulses within one cycle. The first and second voltage generation units 32a and 32b may be provided in addition to the power supply 31, and the first voltage generation unit 32a may be provided in place of the second RF generation unit 31b.

[0041] The exhaust system 40 may be connected to, for example, a gas outlet 10e located at the bottom of the plasma processing chamber 10. The exhaust system 40 may include a pressure regulating valve and a vacuum pump. The pressure regulating valve regulates the pressure in the plasma processing space 10s. The vacuum pump may include a turbomolecular pump, a dry pump, or a combination thereof.

[0042] Refer to FIGS. 5 and 6 below. FIG. 5 is a partially enlarged cross-sectional view of a substrate support portion of a plasma processing apparatus according to one exemplary embodiment. The substrate support portion 11 includes a substrate support surface 51c and a ring support surface 51d. The substrate support surface 51c is configured to support a substrate W thereon. In one example, the substrate support surface 51c is a substantially circular surface. The ring support surface 51d is configured to support a ring member R thereon. The ring support surface 51d extends so as to surround the substrate support surface 51c. In one example, the ring support surface 51d is an annular surface. In one embodiment, the ring support surface 51d is positioned lower than the substrate support surface 51c. A step is formed between the substrate support surface 51c and the ring support surface 51d.

[0043] In one embodiment, the substrate support portion 11 has an electrostatic chuck 51. The electrostatic chuck 51 includes the substrate support surface 51c and the ring support surface 51d. The electrostatic chuck 51 is configured to hold the substrate W on the substrate support surface 51c and the edge ring ER on the ring support surface 51d by electrostatic attraction respectively. The edge ring ER is an example of the ring member R. The edge ring ER has an annular shape. The substrate W is disposed within a region surrounded by the edge ring ER. The edge ring ER is formed of a conductive material such as silicon or silicon carbide, for example. The edge ring ER may be formed of an insulating material such as quartz.

[0044] The electrostatic chuck 51 has a dielectric portion 51e, a first chuck electrode 51f, and a second chuck electrode 51g. The dielectric portion 51e is formed of a ceramic such as aluminum oxide. The dielectric portion 51e has a substantially disk shape and provides the substrate support surface 51c and the ring support surface 51d.

[0045] The first chuck electrode 51f is located within the dielectric portion 51e and below the substrate support surface 51c. When a voltage is applied to the first chuck electrode 51f, the electrostatic chuck 51 generates an electrostatic attraction to attract and hold the substrate W to the substrate support surface 51c. The second chuck electrode 51g is located within the dielectric portion 51e and below the ring support surface 51d. When a voltage is applied to the second chuck electrode 51g, the electrostatic chuck 51 generates an electrostatic attraction to attract and hold the edge ring ER to the ring support surface 51d. In the illustrated example, the electrostatic chuck 51 includes a unipolar electrostatic chuck for holding the substrate W and a bipolar electrostatic chuck for holding the edge ring ER. However, a bipolar electrostatic chuck may be used instead of a unipolar electrostatic chuck, and a unipolar electrostatic chuck may be used instead of a bipolar electrostatic chuck.

[0046] A covering ring CR is positioned outside the edge ring ER, surrounding the edge ring ER. The covering ring CR is an example of a ring member R. The covering ring CR has a ring shape. The covering ring CR covers the upper surface of the insulating member 27. The covering ring CR is formed from an insulating material such as quartz. The covering ring CR may also be formed from a conductive material such as silicon or silicon carbide. The outer circumference of the edge ring ER is positioned to overlap with the inner circumference of the covering ring CR when viewed from above. Furthermore, the outer circumference of the covering ring CR is positioned outside the outer circumference of the edge ring ER, surrounding the outer circumference of the edge ring ER.

[0047] The base 50 may include a first base 501, a second base 502, and an insulating member 29. The first base 501 is located below the electrostatic chuck 51 and supports the electrostatic chuck 51. The first base 501 provides a flow path 50a. The second base 502 is located below the first base 501 and supports the first base 501. The first base 501 is located between the electrostatic chuck 51 and the second base 502. The insulating member 29 is located below the second base 502 and supports the second base 502.

[0048] The substrate support portion 11 includes a plurality of lifter pins 71 and an actuator 72. The plurality of lifter pins 71 are configured to project upward from the ring support surface 51d. In one example, the plurality of lifter pins 71 include at least three lifter pins 71. The actuator 72 is configured to move the plurality of lifter pins 71 up and down. The actuator 72 may be inserted into the through hole 72h of the second base 502. The actuator 72 may be fixed to the sleeve 28. The sleeve 28 is disposed in the horizontal gap 27s between the first base 501 and the insulating member 27. For example, the sleeve 28 is fixed on the second base 502 within the gap 27s. The plurality of lifter pins 71 may be respectively inserted into the through holes 28h of the sleeve 28. The cover ring CR may provide a plurality of through holes CRh through which the plurality of lifter pins 71 are respectively inserted. The control unit 2 raises and lowers the plurality of lifter pins 71 when transferring the ring member R between the transfer robot TR and the substrate support portion 11.

[0049] FIG. 6 is a diagram schematically showing the configuration of a ring member according to one exemplary embodiment. The ring member R provides a plurality of recesses 9 respectively corresponding to the plurality of lifter pins 71. In FIG. 6, an edge ring ER is shown as an example of the ring member R. Hereinafter, an edge ring ER providing a plurality of recesses 9 will be described as an example of the ring member R. The plurality of recesses 9 may be arranged at equal intervals on the circumference of the edge ring ER. In one embodiment, the plurality of recesses 9 include three or more recesses 9. In the example shown in FIG. 6, the plurality of recesses 9 include three recesses 9.

[0050] In one embodiment, each of the plurality of recesses 9 includes a first width W1 and a second width W2. The first width W1 is along the radial direction D1 of the edge ring ER. The second width W2 is along the circumferential direction of the edge ring ER. As shown in Figure 6, the first width W1 may be greater than the second width W2. Each of the plurality of recesses 9 may have a groove shape extending along the radial direction D1. The first width W1 and the second width W2 are greater than the diameter of each tip 71a of the plurality of lifter pins 71. Each of the plurality of recesses 9 is configured to accommodate each tip 71a of the plurality of lifter pins 71. In one embodiment, the inner surface 90 defining each of the plurality of recesses 9 may include a tapered surface 91. The tapered surface 91 widens towards the opening of each of the plurality of recesses 9.

[0051] The details of the first detector CM1 and the second detector CM2 will be described below with reference to Figures 7 and 8. Figures 7(a) to 7(e) are diagrams illustrating an example of the process of obtaining the first correction value by the first detector. The first detector CM1 includes the transport path P in its detection range. The first detector CM1 is configured to detect the horizontal position of the ring member R. The horizontal position of the ring member R includes the relative position of the ring member R with respect to the first detector CM1 in the horizontal direction.

[0052] As described above, the first detector CM1 may include optical sensors 81a and 81b. In the example shown in Figure 7, the optical sensors 81a and 81b are positioned opposite each other, with optical sensor 81a on the right and optical sensor 81b on the left when viewed from the vacuum chamber VCH to the gate valve G1. Optical sensors 81a and 81b are spaced apart from each other at a distance smaller than the diameter of the substrate W. Each of the optical sensors 81a and 81b may include a light-emitting unit and a light-receiving unit. The light-emitting unit and the light-receiving unit are arranged to face each other along the vertical direction. The light-emitting unit emits light toward the light-receiving unit. The light emitted by the light-emitting unit may include laser light or diffused light. The light-emitting unit may include an LED or a light-emitting element other than an LED.

[0053] When the transport module TM loads the ring member R into the processing space 10s, and when the transport module TM loads the ring member R out of the processing space 10s, the ring member R passes through the detection range of the first detector CM1.

[0054] Figures 7(a) to 7(e) show the change in the relative positional relationship between the optical sensors 81a, 81b and the ring member R when the ring member R is transported to a transport position in the processing space 10s. Each of the optical sensors 81a and 81b detects the inner edge of the ring member R as it passes through its detection range. The control unit 2 can acquire the position of the transport robot TR when the inner edge of the ring member R passes through the detection range. In one example, the control unit 2 acquires the coordinate position of the end effector FK11 supporting the ring member R as the position of the transport robot TR. The coordinate system of the end effector FK11 is, for example, an XY coordinate system that includes the Y axis along the direction in which the end effector FK11 moves and the X axis perpendicular to the Y axis. The optical sensors 81a and 81b face each other in the direction of the X axis. The first detector CM1 may include a control unit separate from the control unit 2. Instead of end effector FK11, end effector FK12 may support the ring member R.

[0055] In each of Figures 7(a) to 7(e), the ring member R is located closer to the optical sensor 81b than to the optical sensor 81a. First, as shown in Figure 7(b), the optical sensor 81b detects the inner edge of the ring member R. The control unit 2 obtains the coordinate position 82a of the end effector FK11 when the optical sensor 81b detects the inner edge of the ring member R. Next, as shown in Figure 7(c), the optical sensor 81a detects the inner edge of the ring member R. The control unit 2 obtains the coordinate position 82b of the end effector FK11 when the optical sensor 81a detects the inner edge of the ring member R. Next, as shown in Figure 7(d), the optical sensor 81a detects the inner edge of the ring member R. The control unit 2 obtains the coordinate position 82c of the end effector FK11 when the optical sensor 81a detects the inner edge of the ring member R. Finally, as shown in Figure 7(e), the optical sensor 81b detects the inner edge of the ring member R. The control unit 2 obtains the coordinate position 82d of the end effector FK11 when the optical sensor 81b detects the inner edge of the ring member R.

[0056] The coordinate positions 82a, 82b, 82c, and 82d provide the horizontal position of the ring member R in the XY coordinate system. For example, the relative position between the coordinate position of the end effector FK11 and the center of the ring member R in the horizontal direction is obtained. In one example, if the distance between optical sensors 81a and 81b is known in advance, and the inner diameter of the ring member R is known in advance, the relative position between the coordinate position of the end effector FK11 and the center of the ring member R can be obtained by the Pythagorean theorem. Furthermore, by referring to Figure 7(e) to Figure 7(a) in reverse order, the horizontal position of the ring member R being transported out of the processing space 10s from the transport position within the processing space 10s can be obtained.

[0057] Figure 8 illustrates an example of the process of obtaining a second correction value using a second detector. The second detector CM2 is configured to detect the rotational position of the ring member R. The rotational position includes the relative position of the ring member R with respect to the second detector CM2 in the circumferential direction about the central axis AX of the ring member R. In one example, the second detector CM2 may include a line camera.

[0058] As described above, in one embodiment, the second detector CM2 is located within the aligner AN. The aligner AN is configured to adjust the rotational position of the ring member R. In one example, the aligner AN has a rotatable support base. The support base of the aligner AN supports the ring member R on which it is placed. The second detector CM2 detects the rotational position of a marker En (e.g., a notch) located on the outer edge Ed of the ring member R. The rotational position may include the angle between the second detector CM2 and the marker En in the circumferential direction about the central axis AX, and / or the distance between the second detector CM2 and the marker En in the circumferential direction about the central axis AX. The rotational position may also be the amount of change in the angle, and / or the amount of change in the distance.

[0059] The substrate processing system PS may include another substrate support section 11A instead of the substrate support section 11. Figure 9 is a partially enlarged cross-sectional view of the substrate support section of a plasma processing apparatus according to another exemplary embodiment. Hereinafter, the differences between the substrate support section 11A and the substrate support section 11 shown in Figure 5 will be mainly explained, and redundant explanations will be omitted.

[0060] In the substrate support section 11A, the base 50 is made from a single component. The substrate support section 11A does not include the sleeve 28. The inner edge of the insulating member 27 is positioned on the outer edge of the base 50. The through hole 71h penetrates the outer edge of the base 50 and the inner edge of the insulating member 27. The actuator 72 is inserted through the portion of the through hole 71h that penetrates the outer edge of the base 50. Each of the multiple lifter pins 71 is inserted through the portion of the through hole 71h that penetrates the outer edge of the base 50, the portion that penetrates the inner edge of the insulating member 27, and the through hole CRh.

[0061] Hereinafter, a transport method according to one exemplary embodiment will be described with reference to Figures 10 and 11. Figure 10 is a flowchart showing a transport method according to one exemplary embodiment. The transport method shown in Figure 10 (hereinafter referred to as "Method MT") can be performed using a substrate processing system PS. In Method MT, each part of the substrate processing system PS can be controlled by a control unit 2. Method MT includes processes STa, STb, STc, STd, and STe. The control unit 2 is configured to execute processes STa, STb, STc, STd, and STe.

[0062] As shown in Figure 10, method MT begins in process STa. In process STa, the control unit 2 places the ring member R on the end effector FK11 and controls the transport module TM to transport the ring member R to a transport position in the processing space 10s. The transport position is located above the substrate support 11. Specifically, the transport position is located above the ring support surface 51d. In one example, the ring member R is transported from the ring stocker SR along the transport path P to the transport position. The transport path P may also pass through the aligner AN. Note that the ring member R may be placed on the end effector FK12 instead of the end effector FK11. Below, an example in which the ring member R is placed on the end effector FK11 as described above will be explained.

[0063] Next, in step STb, the control unit 2 controls the actuator 72 to lift the ring member R with the lifting pins 71 so that the ring member R is guided by itself so that the tips 71a of the lifting pins 71 are positioned in the plurality of recesses 9 of the ring member R located above the ring support surface 51d. For example, the ring member R is guided by itself as the tips 71a come into contact with the tapered surfaces 91 of each of the plurality of recesses 9. By being guided by itself, the horizontal position and rotational position of the ring member R can be adjusted.

[0064] In one embodiment, the control unit 2 may be configured to execute steps STb1 and STb2 after step STb and before step STc. In step STb1, the control unit 2 controls the actuator 72 to lower the ring member R, which has been lifted by the plurality of lifter pins 71, onto the ring support surface 51d. In step STb2, the control unit 2 controls the actuator 72 to lift the ring member R with the plurality of lifter pins 71 so that the ring member R is guided on its own so that the tips 71a of the plurality of lifter pins 71 are positioned in the plurality of recesses 9 of the ring member R located on the ring support surface 51d. According to steps STb1 and STb2, since the ring member R is guided on its own again after being placed on the ring support surface 51d, the horizontal position and rotational position of the ring member R can be reliably adjusted.

[0065] Next, in step STc, the control unit 2 controls the actuator 72 to lower the ring member R, which has been lifted by the multiple lifter pins 71, onto the end effector FK 11.

[0066] Next, in process STd, the control unit 2 detects the horizontal position of the ring member R placed on the end effector FK11 after process STc using the first detector CM1, and obtains a first correction value for correcting the transport position. The first correction value may be the horizontal position. The horizontal position of the ring member R detected in process STd reflects the horizontal position of the ring member R adjusted in process STb. The first correction value may be the amount of adjustment of the horizontal position of the ring member R adjusted in process STb. The first correction value may also be the horizontal position of the ring member R before and after process STb.

[0067] In one embodiment, step STd may be performed when the ring member R supported on the end effector FK11 is removed from the processing space 10s and / or when the ring member R is re-imported into the processing space 10s. Since the opportunities to perform step STd to obtain the first correction value are increased, the influence of variability due to the detection of the first correction value is reduced.

[0068] Next, in process STe, the control unit 2 is configured to detect the rotational position of the ring member R using the second detector CM2 after process STc, and to obtain a second correction value for correcting the rotational position of the ring member R at the transport position. For example, the second correction value may be a value with the sign of the rotational position reversed. In one example, if the marker En in process STa is the origin position, then in process STe, the angle or circumferential distance between the origin position and the position of marker En in process STe is detected as the rotational position. The rotational position of the ring member R detected in process STe reflects the rotational position of the ring member R adjusted in process STb.

[0069] As described above, with the substrate processing system PS and method MT, the horizontal position and rotational position of the ring member R after it has been self-guided by the multiple lifter pins 71 are detected as a first correction value and a second correction value, respectively. Therefore, the position of the ring member R that is transported after method MT can be adjusted.

[0070] In one embodiment, the control unit 2 may be configured to execute processes STf1, STf2, and STf3 after processes STd and STe. In process STf1, the control unit 2 corrects the rotational position of one of the ring members R1, which is one or more ring members including the ring member R, by a second correction value. In one example, the ring stocker SR houses one or more ring members including the ring member R. For example, after processes STd and STe, one ring member R1 is transported to the aligner AN. In the aligner AN, the rotational position of one ring member R1 at the transport position is adjusted by rotating the one ring member R1 by a value obtained by reversing the sign of the rotational position of the ring member R detected in process STe.

[0071] Next, in process STf2, the control unit 2 places one ring member R1 on the end effector FK11 and controls the transport module TM to transport the one ring member R1.

[0072] Next, in step STf3, the control unit 2 is configured to correct the transport position of one ring member R1 by a first correction value. If the first correction value is the horizontal position of the ring member R detected in step STd, the transport position is corrected so that the horizontal position of one ring member R1 approaches the horizontal position of the ring member R as it passes through the detection range of the first detector CM1. If the first correction value is the amount of adjustment of the horizontal position of the ring member R before and after step STb, one ring member R1 is transported to a transport position corrected by the first correction value. Note that the order in which steps STf1, STf2, and STf3 are executed is not limited to any particular order.

[0073] In one embodiment, step STf3 may include steps STf31 and STf32. In step STf31, the horizontal position of one ring member R1 is detected by the first detector CM1. In step STf32, the transport position of one ring member R1 is corrected based on the horizontal position detected in step STf31 and a first correction value. According to steps STf31 and STf32, the transport position is corrected according to the horizontal position of the transported ring member R1.

[0074] In one embodiment, the ring member R is an edge ring ER, and one ring member R1 may be the same edge ring ER. In one embodiment, the ring member R is a first edge ring ER1, and one ring member R1 may be a second edge ring ER2 different from the first edge ring ER1. In one embodiment, one or more ring members include a covering ring CR. The ring member R is an edge ring ER, and one ring member R1 may be a covering ring CR.

[0075] The following describes an example in which one ring member R1 is a second edge ring ER2. In one embodiment, the second edge ring ER2 does not need to provide a plurality of recesses 9. The substrate processing system PS may include the third detector CM3 described above. The third detector CM3 includes the ring support surface 51d in its detection range. The third detector CM3 is configured to detect the horizontal position of the second edge ring ER2.

[0076] In one embodiment, the control unit 2 is configured to perform steps STg, STh, and STi. In step STg, after step STf3, the control unit 2 controls the actuator 72 to lift the second edge ring ER2, which is located above the ring support surface 51d, using a plurality of lifter pins 71.

[0077] Next, in step STh, the control unit 2 controls the actuator 72 to lower the second edge ring ER2, which has been lifted by the multiple lifter pins 71, onto the ring support surface 51d.

[0078] Next, in process STi, the control unit 2 detects the horizontal position of the second edge ring ER2 placed on the ring support surface 51d using the third detector CM3 and obtains a third correction value for correcting the transport position. The third correction value is, for example, the relative positional relationship between the center of the ring support surface 51d and the center of the second edge ring ER2.

[0079] According to steps STg, STth, and STi, the horizontal position of the second edge ring ER2 after it has been placed on the ring support surface 51d is detected. The second edge ring ER2 does not provide a plurality of recesses 9. Therefore, the horizontal displacement of the second edge ring ER2 on the ring support surface 51d, which is not guided by itself, is detected.

[0080] In one embodiment, the control unit 2 may be configured to repeatedly execute a plurality of steps ST1. Figure 11 is a flowchart showing a repeating step in a transport method according to one exemplary embodiment. The plurality of steps ST1 include steps STj, STk, STl, STm, STn, STo, STp, STq, STr, STs, STt, and STu. The control unit 2 is configured to execute steps STj, STk, STl, STm, STn, STo, STp, STq, STr, STs, STt, and STu.

[0081] The control unit 2 executes process STj after process STi. In process STj, the control unit 2 controls the actuator 72 to lift the second edge ring ER2, which is placed on the ring support surface 51d, using the multiple lifter pins 71. Subsequently, in process STk, the control unit 2 controls the actuator 72 to lower the second edge ring ER2, which has been lifted by the multiple lifter pins 71, onto the end effector FK11.

[0082] Next, in process STl, the control unit 2 is configured to control the transport module TM so as to correct the horizontal position and transport position of the second edge ring ER2 by a third correction value. For example, the control unit 2 corrects the horizontal position and transport position of the second edge ring ER2 so that the center of the ring support surface 51d and the center of the second edge ring ER2 coincide.

[0083] Next, in step STm, the control unit 2 controls the actuator 72 to lift the second edge ring ER2, which is located above the ring support surface 51d, using the multiple lifter pins 71 after step STl. Subsequently, in step STn, the control unit 2 controls the actuator 72 to lower the second edge ring ER2, which has been lifted by the multiple lifter pins 71, onto the ring support surface 51d.

[0084] Next, in step STo, the control unit 2 detects the horizontal position of the second edge ring ER2 placed on the ring support surface 51d using the third detector and obtains a third correction value. Subsequently, in step STp, the control unit 2 determines whether the third correction value obtained in step STo is greater than a threshold value.

[0085] In one embodiment, the control unit 2 is configured to execute process STq if it determines that the third correction value is greater than a threshold (the third correction value is not less than or equal to a threshold) in process STp. In process STq, processes STj, STk, STl, STm, STn, STo, and STp are executed again. By executing each process again in process STq, the center of the second edge ring ER2 placed on the ring support surface 51d is more likely to be closer to the center of the ring support surface 51d. The number of times process STq is executed may be predetermined. In one example, process STq is executed up to three times. If the number of times process STq has been executed exceeds the predetermined number, the control unit 2 may interrupt the process.

[0086] In one embodiment, the control unit 2 is configured to execute steps STr and STs if it is determined in step STp that the third correction value is less than or equal to a threshold. In step STr, the control unit 2 holds the second edge ring ER2, which is placed on the ring support surface 51d, with an electrostatic chuck. Next, in step STs, the control unit 2 detects the horizontal position of the second edge ring ER2, which is placed on the ring support surface 51d, with the third detector CM3 and obtains the third correction value. According to steps STr and STs, the horizontal position of the second edge ring ER2 after it has been held by the electrostatic chuck 51 is detected. Therefore, the horizontal displacement of the second edge ring ER2 due to the influence of the electrostatic chuck 51 is detected.

[0087] Next, in process STt, the control unit 2 determines whether the third correction value obtained in process STs is greater than a threshold. In one embodiment, if the control unit 2 determines in process STt that the third correction value is greater than a threshold (the third correction value is not less than or equal to a threshold), it is configured to execute process STu. In process STu, processes STj, STk, STl, STm, STn, STo, and STp are executed again. By executing each process again in process STu, the center of the second edge ring ER2 placed on the ring support surface 51d is more likely to be closer to the center of the ring support surface 51d. The number of times process STu is executed may be predetermined. In one example, process STu is executed up to three times. If the number of times process STu has been executed exceeds the predetermined number, the control unit 2 may interrupt the process.

[0088] Refer to Figure 12 below. Figure 12 is a flowchart showing a transport method according to another exemplary embodiment. The transport method shown in Figure 12 (hereinafter referred to as "Method MTA") can be performed using a substrate processing system PS. In Method MTA, each part of the substrate processing system PS can be controlled by a control unit 2. Method MTA includes processes STa, STb, STc, STd, STe, STf1, STf2, STf3, STv, STw, STx, STy, STz, and STaa. The control unit 2 is configured to execute processes STa, STb, STc, STd, STe, STf1, STf2, STf3, STv, STw, STx, STy, STz, and STaa.

[0089] In method MTA, the ring member R is an edge ring ER, and one ring member R1 is a covering ring CR. Therefore, steps STa to STf1 are the same as each step in method MT. Below, we will mainly explain the differences between method MTA and method MT shown in Figure 10, and omit redundant explanations.

[0090] In method MTA, step STf3 is executed after step STf1. Step STf3 does not include steps STf31 and STf32. The covering CR is placed on the end effector FK11 such that the center of the edge ring ER, which is placed on the end effector FK11, and the center of the covering CR are in the same position. Therefore, the transport position of the covering CR can be corrected by the first correction value obtained in step STd. Subsequently, in step STf2, the control unit 2 places the covering CR on the end effector FK11 and controls the transport module TM to transport the covering CR to the transport position corrected by the first correction.

[0091] Next, in step STv, the control unit 2 controls the actuator 72 to lift the covering CR, which is located above the ring support surface 51d, using the multiple lifter pins 71 after step STf3. Subsequently, in step STw, the control unit 2 controls the actuator 72 to lower the covering CR, which has been lifted by the multiple lifter pins 71, onto the ring support surface 51d.

[0092] Next, in step STx, the control unit 2 controls the actuator 72 to lift the covering CR, which is located on the ring support surface 51d, using the multiple lifter pins 71. Subsequently, in step STy, the control unit 2 controls the actuator 72 to lower the covering CR, which has been lifted by the multiple lifter pins 71, onto the end effector FK 11.

[0093] Next, in process STz, after process STy, the control unit 2 detects the horizontal position of the covering CR placed on the end effector FK11 using the first detector CM1 and obtains a fourth correction value to correct the transport position. Finally, in process STaa, after process STy, the rotational position of the covering CR is detected by the second detector CM2 and obtains a fifth correction value to correct the rotational position of the covering CR at the transport position.

[0094] As described above, with the substrate processing system PS and method MTA, the transport position of the covering CR is corrected by the correction value of the edge ring ER. Furthermore, the horizontal position and rotational position of the covering CR are detected as the fourth and fifth correction values, respectively. Therefore, the position of the covering CR transported after method MTA can be directly adjusted.

[0095] Although various exemplary embodiments have been described above, the invention is not limited to the exemplary embodiments described above, and various additions, omissions, substitutions, and modifications may be made. Furthermore, it is possible to combine elements from different embodiments to form other embodiments.

[0096] As described above, the substrate processing system PS comprises a plurality of process modules PM1 to PM6. Therefore, the substrate processing system PS comprises a plurality of chambers, including chamber 10. Each of the plurality of chambers provides a plurality of processing spaces, including processing space 10s. The substrate processing system PS comprises a plurality of substrate support parts, including substrate support part 11. In one embodiment, the control unit 2 may be configured to acquire a plurality of first correction values ​​and a plurality of second correction values. The plurality of first correction values ​​correspond to a plurality of transport positions in the plurality of processing spaces, respectively. The plurality of second correction values ​​correspond to a plurality of transport positions in the plurality of processing spaces, respectively. Therefore, correction values ​​corresponding to each of the plurality of chambers can be obtained.

[0097] Herein, various exemplary embodiments included in this disclosure are described in [E1] to [E18] below.

[0098] [E1] A transport module including a transport robot having an end effector configured to support a ring member, the transport robot being configured to transport the ring member to a transport position in the processing space along a transport path, the transport module including the transport robot having an end effector configured to support a ring member, the transport robot being configured to transport the ring member to a transport position in the processing space along a transport path, the first detector having a detection range that includes the transport path and is configured to detect the horizontal position of the ring member, the horizontal position including the relative position of the ring member with respect to the first detector in the horizontal direction, the second detector being configured to detect the rotational position of the ring member, the rotational position including the relative position of the ring member with respect to the second detector in the circumferential direction about the central axis of the ring member, and a control unit configured to control the substrate support and the transport module, wherein the substrate support includes a substrate support surface configured to support a substrate placed thereon, and a ring support surface extending around the substrate support surface and configured to support a ring member placed thereon The ring member comprises: a plurality of lifter pins configured to protrude upward from the ring support surface; an actuator configured to move the plurality of lifter pins up and down; the ring member provides a plurality of recesses corresponding to each of the plurality of lifter pins; the control unit performs the following steps: (a) controlling the transport module to place the ring member on the end effector and transport the ring member to the transport position; (b) controlling the actuator to lift the ring member with the plurality of lifter pins so that the ring member is guided by itself so that the tips of the plurality of lifter pins are positioned in the plurality of recesses of the ring member located above the ring support surface; (c) controlling the actuator to lower the ring member, which has been lifted by the plurality of lifter pins, onto the end effector; and (d) after (c), detecting the horizontal position of the ring member placed on the end effector with the first detector and obtaining a first correction value for correcting the transport position.A substrate processing system configured to perform the following steps after (c): (e) after (c), the step of detecting the rotational position of the ring member with the second detector and obtaining a second correction value for correcting the rotational position of the ring member at the transport position. [E2] The substrate processing system according to E1, wherein the control unit is configured to further perform the following steps after (d) and (e): (f1) correcting the rotational position of one of the one or more ring members including the ring member with the second correction value; (f2) controlling the transport module to place the one ring member on the end effector and transport the one ring member; and (f3) correcting the transport position to which the one ring member is transported with the first correction value. [E3] The substrate processing system according to E2, wherein (f3) includes the steps of: (f31) detecting the horizontal position of the one ring member with the first detector; and (f32) correcting the transport position of the one ring member using the horizontal position of the one ring member detected in (f31) and the first correction value. [E4] The substrate processing system according to any one of E1 to E3, wherein the control unit is configured to further perform the steps of: (b1) controlling the actuator to lower the ring member, which has been lifted by the plurality of lifter pins, onto the ring support surface; and (b2) controlling the actuator to lift the ring member with the plurality of lifter pins so that the ring member is guided by itself so that the tips of the plurality of lifter pins are positioned in the plurality of recesses of the ring member located on the ring support surface. [E5] The substrate processing system according to any one of E1 to E4, wherein (d) is performed when the ring member supported on the end effector is removed from the processing space and / or when the ring member is brought back into the processing space. [E6] The substrate processing system according to any one of E1 to E5, wherein the ring member is an edge ring, and the one ring member is the edge ring. [E7]The substrate processing system according to any one of E1 to E5, wherein the ring member is a first edge ring, and the one ring member is a second edge ring separate from the first edge ring. [E8] The substrate processing system according to E7, wherein the second edge ring does not provide the plurality of recesses. [E9] The substrate processing system according to either E7 or E8, further comprising a third detector configured to detect the horizontal position of the second edge ring, wherein the control unit is configured to further perform: (g) after (f3), control the actuator to lift the second edge ring located above the ring support surface using the plurality of lifter pins; (h) control the actuator to lower the second edge ring, which has been lifted by the plurality of lifter pins, onto the ring support surface; and (i) detect the horizontal position of the second edge ring placed on the ring support surface using the third detector and obtain a third correction value for correcting the transport position. [E10] The control unit performs the following steps: (j) control the actuator to lift the second edge ring placed on the ring support surface using the plurality of lifter pins; (k) control the actuator to lower the second edge ring, which has been lifted by the plurality of lifter pins, onto the end effector; (l) control the transport module to correct the horizontal position and the transport position of the second edge ring using the third correction value; (m) after (l), control the actuator to lift the second edge ring located above the ring support surface using the plurality of lifter pins; (n) control the actuator to lower the second edge ring, which has been lifted by the plurality of lifter pins, onto the ring support surface; (o) detect the horizontal position of the second edge ring placed on the ring support surface using the third detector and obtain the third correction value; (p) determine whether the third correction value obtained in (o) is greater than a threshold value.The substrate processing system according to E9, further configured to perform the following: [E11] The substrate processing system according to E10, wherein the control unit is configured to perform the steps of (j), (k), (l), (m), (n), (o), and (p) if (q) the third correction value in (p) is determined to be greater than the threshold. [E12] The substrate processing system according to E11, wherein the substrate support unit further comprises an electrostatic chuck configured to hold the ring member placed on the ring support surface, and the control unit is configured to perform the steps of (r) holding the ring member placed on the ring support surface with the electrostatic chuck if (p) the third correction value is less than or equal to the threshold. [E13] The substrate processing system according to E12, wherein the control unit is configured to further perform the steps of: (t) determining whether the third correction value obtained in (s) is greater than a threshold; and (u) if it is determined in (t) that the third correction value is greater than the threshold, then perform the steps of (j), (k), (l), (m), (n), (o), (p), (q), (r), (s), and (t). [E14] The substrate processing system according to any one of E2 to E5, wherein the one or more ring members include a covering ring, the ring members are edge rings, and one of the ring members is a covering ring. [E15] The control unit performs the following steps: (v) after (f3), control the actuator to lift the covering located above the ring support surface using the plurality of lifter pins; (w) control the actuator to lower the covering, which has been lifted by the plurality of lifter pins, onto the ring support surface; (x) control the actuator to lift the covering located above the ring support surface using the plurality of lifter pins;The substrate processing system according to E14, further comprising: (y) controlling the actuator to lower the covering, which has been lifted by the plurality of lifter pins, onto the end effector; (z) after (y), detecting the horizontal position of the covering placed on the end effector with the first detector and obtaining a fourth correction value for correcting the transport position; and (aa) after (y), detecting the rotational position of the covering with the second detector and obtaining a fifth correction value for correcting the rotational position of the covering at the transport position. [E16] A substrate processing system according to any one of E1 to 15, further comprising: a plurality of chambers including the chamber, each providing a plurality of processing spaces including the processing space; and a plurality of substrate support parts including the substrate support part, wherein the control unit is configured to acquire a plurality of first correction values ​​corresponding to a plurality of transport positions in the plurality of processing spaces, and a plurality of second correction values ​​corresponding to a plurality of transport positions in the plurality of processing spaces. [E17] A substrate processing system according to any one of E1 to 16, further comprising: an aligner configured to adjust the rotational position of the ring member, and the second detector being located within the aligner. [E18] A substrate processing system according to E17, further comprising: a ring stocker connected to the transport module, and the aligner being located within the ring stocker. [E19] (a) A step of transporting a ring member to a transport position above a substrate support portion including a plurality of lifter pins, the ring member having a plurality of recesses corresponding to each of the plurality of lifter pins; (b) A step of lifting the ring member with the plurality of lifter pins so that the ring member is guided by itself so that the tips of the plurality of lifter pins are each positioned in the plurality of recesses; (c) A step of lowering the ring member that has been lifted by the plurality of lifter pins; (d) A step of detecting the horizontal position of the ring member after (c) and obtaining a first correction value for correcting the transport position.(e) A conveying method comprising the step of detecting the rotational position of the ring member after (c) and obtaining a second correction value for correcting the rotational position of the ring member at the conveying position.

[0099] From the above description, it will be understood that the various embodiments of this disclosure are described herein for illustrative purposes and can be modified in various ways without departing from the scope and spirit of this disclosure. Accordingly, the various embodiments disclosed herein are not intended to limit the scope and spirit, and the true scope and spirit are shown by the appended claims.

[0100] 2...control unit, 9...recess, 10...chamber, 10s...processing space, 11, 11A...substrate support part, 51...electrostatic chuck, 51c...substrate support surface, 51d...ring support surface, 71...lifter pin, 71a...tip, 72...actuator, AN...aligner, AX...central axis, CM1...first detector, CM2...second detector, CM3...third detector, CR...covering, ER...edge ring, ER1...first edge ring, ER2...second edge ring, FK11, FK12...end effector, P...transport path, PS...substrate processing system, R...ring member, R1...one ring member, SR...ring stocker, TM...transport module, TR...transport robot, W...substrate.

Claims

1. A transport module including a transport robot having an end effector configured to support a ring member, the transport robot being configured to transport the ring member to a transport position in the processing space along a transport path, the transport module including the transport robot having an internal chamber providing a processing space, the transport module including the transport path within its detection range and configured to detect the horizontal position of the ring member, the horizontal position including the relative position of the ring member to the first detector in the horizontal direction, the first detector having the transport path within its detection range and configured to detect the horizontal position of the ring member, the horizontal position including the relative position of the ring member to the first detector in the horizontal direction, the second detector being configured to detect the rotational position of the ring member, the rotational position including the relative position of the ring member to the second detector in the circumferential direction about the central axis of the ring member, and a control unit configured to control the substrate support and the transport module, wherein the substrate support includes a substrate support surface configured to support a substrate placed thereon, a ring support surface extending around the substrate support surface and configured to support a ring member placed thereon, and a plurality of lifter pins configured to protrude upward from the ring support surface. The control unit comprises: an actuator configured to move the plurality of lifter pins up and down, wherein the ring member provides a plurality of recesses corresponding to each of the plurality of lifter pins, and the control unit comprises: (a) a step of controlling the transport module to place the ring member on the end effector and transport the ring member to the transport position; (b) a step of controlling the actuator to lift the ring member with the plurality of lifter pins so that the ring member is guided by itself so that the tips of the plurality of lifter pins are each positioned in the plurality of recesses of the ring member located above the ring support surface; (c) a step of controlling the actuator to lower the ring member, which has been lifted by the plurality of lifter pins, onto the end effector; and (d) a step of detecting the horizontal position of the ring member placed on the end effector with the first detector after (c) and obtaining a first correction value for correcting the transport position.A substrate processing system configured to perform the following steps after (c): detecting the rotational position of the ring member with the second detector and obtaining a second correction value for correcting the rotational position of the ring member at the transport position.

2. The substrate processing system according to claim 1, wherein the control unit is configured to further perform the following steps after (d) and (e): (f1) correct the rotational position of one of the one or more ring members including the ring member by the second correction value; (f2) control the transport module to place the one ring member on the end effector and transport the one ring member; and (f3) correct the transport position in which the one ring member is transported by the first correction value.

3. The substrate processing system according to claim 2, wherein (f3) includes the steps of: (f31) detecting the horizontal position of the one ring member with the first detector; and (f32) correcting the transport position in which the one ring member is transported based on the horizontal position of the one ring member detected in (f31) and the first correction value.

4. The substrate processing system according to claim 1, wherein the control unit is configured to further perform, after (b) and before (c), (b1) a step of controlling the actuator to lower the ring member, which has been lifted by the plurality of lifter pins, onto the ring support surface, and (b2) a step of controlling the actuator to lift the ring member with the plurality of lifter pins so that the ring member is guided by itself so that the tips of the plurality of lifter pins are positioned in the plurality of recesses of the ring member located on the ring support surface.

5. The substrate processing system according to claim 1, wherein (d) is performed when the ring member supported on the end effector is removed from the processing space and / or when the ring member is brought back into the processing space.

6. The substrate processing system according to claim 2, wherein the ring member is an edge ring, and the one ring member is the edge ring.

7. The substrate processing system according to claim 2, wherein the ring member is a first edge ring, and the one ring member is a second edge ring separate from the first edge ring.

8. The substrate processing system according to claim 7, wherein the second edge ring does not provide the plurality of recesses.

9. The substrate processing system according to claim 8, further comprising a third detector configured to include the ring support surface in its detection range and to detect the horizontal position of the second edge ring, wherein the control unit is configured to further perform: (g) after (f3), control the actuator to lift the second edge ring located above the ring support surface using the plurality of lifter pins; (h) control the actuator to lower the second edge ring, which has been lifted by the plurality of lifter pins, onto the ring support surface; and (i) detect the horizontal position of the second edge ring placed on the ring support surface using the third detector and obtain a third correction value for correcting the transport position.

10. The control unit is configured to further perform: (j) the step of controlling the actuator to lift the second edge ring placed on the ring support surface using the plurality of lifter pins; (k) the step of controlling the actuator to lower the second edge ring, which has been lifted by the plurality of lifter pins, onto the end effector; (l) the step of controlling the transport module to correct the horizontal position and the transport position of the second edge ring using the third correction value; (m) the step of controlling the actuator to lift the second edge ring, which is located above the ring support surface, using the plurality of lifter pins, after (l); (n) the step of controlling the actuator to lower the second edge ring, which has been lifted by the plurality of lifter pins, onto the ring support surface; (o) the step of detecting the horizontal position of the second edge ring placed on the ring support surface using the third detector and obtaining the third correction value; and (p) the step of determining whether the third correction value obtained in (o) is greater than a threshold value. The substrate processing system according to claim 9.

11. The substrate processing system according to claim 10, wherein the control unit is configured to perform the steps of (j), (k), (l), (m), (n), (o), and (p) if it is determined in (q) (p) that the third correction value is greater than the threshold value.

12. The substrate processing system according to claim 11, wherein the substrate support portion further comprises an electrostatic chuck configured to hold the ring member placed on the ring support surface, and the control unit is configured to further perform the following steps when it is determined in (p) that the third correction value is less than or equal to the threshold: (r) holding the second edge ring placed on the ring support surface with the electrostatic chuck; and (s) detecting the horizontal position of the second edge ring placed on the ring support surface with the third detector and obtaining the third correction value.

13. The substrate processing system according to claim 12, wherein the control unit is configured to further perform the steps of: (t) determining whether the third correction value obtained in (s) is greater than a threshold; and (u) if it is determined in (t) that the third correction value is greater than the threshold, then performing (j), (k), (l), (m), (n), (o), (p), (q), (r), (s), and (t).

14. The substrate processing system according to claim 2, wherein one or more ring members include a covering ring, the ring members are edge rings, and one of the ring members is a covering ring.

15. The substrate processing system according to claim 14, wherein the control unit is configured to further perform: (v) after (f3), the step of controlling the actuator to lift the covering located above the ring support surface using the plurality of lifter pins; (w) the step of controlling the actuator to lower the covering lifted by the plurality of lifter pins onto the ring support surface; (x) the step of controlling the actuator to lift the covering located above the ring support surface using the plurality of lifter pins; (y) the step of controlling the actuator to lower the covering lifted by the plurality of lifter pins onto the end effector; (z) after (y), the step of detecting the horizontal position of the covering placed on the end effector using the first detector and obtaining a fourth correction value for correcting the transport position; and (aa) after (y), the step of detecting the rotational position of the covering using the second detector and obtaining a fifth correction value for correcting the rotational position of the covering at the transport position.

16. A substrate processing system according to any one of claims 1 to 15, further comprising: a plurality of chambers including the chamber, each providing a plurality of processing spaces including the processing space; and a plurality of substrate support parts including the substrate support part, wherein the control unit is configured to acquire a plurality of first correction values ​​corresponding to a plurality of transport positions in the plurality of processing spaces, and a plurality of second correction values ​​corresponding to a plurality of transport positions in the plurality of processing spaces.

17. The substrate processing system according to any one of claims 1 to 15, further comprising an aligner configured to adjust the rotational position of the ring member, wherein the second detector is disposed within the aligner.

18. The substrate processing system according to claim 17, further comprising a ring stocker connected to the transport module, wherein the aligner is disposed within the ring stocker.

19. A transport method comprising: (a) transporting a ring member to a transport position above a substrate support portion including a plurality of lifter pins, the ring member having a plurality of recesses corresponding to each of the plurality of lifter pins; (b) lifting the ring member with the plurality of lifter pins so that the ring member is guided by itself so that the tips of the plurality of lifter pins are each positioned in the plurality of recesses; (c) lowering the ring member that has been lifted by the plurality of lifter pins; (d) after (c), detecting the horizontal position of the ring member and obtaining a first correction value for correcting the transport position; and (e) after (c), detecting the rotational position of the ring member and obtaining a second correction value for correcting the rotational position of the ring member at the transport position.

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