Substrate processing apparatus

Abstract

A substrate processing apparatus according to one embodiment of the present disclosure comprises an etching process unit and a removal process unit. The etching process unit etches at least a part of a metal film by bringing a processing liquid into contact with the metal film, which contains Mo or W and is formed on the surface of an SiOx film or an AlOx film on a substrate. The removal process unit removes a reaction product between the metal film and the processing liquid adhering to the surface of the substrate by bringing the reaction product into contact with a removal liquid.

Description

Substrate processing equipment

[0001] The embodiments of the disclosure relate to a substrate processing apparatus.

[0002] In recent years, advances in lithography technology have led to rapid miniaturization of wiring patterns in the manufacturing of semiconductor devices and liquid crystal display elements. For example, in next-generation semiconductor devices, molybdenum or tungsten are being considered as wiring materials to reduce resistance (see Patent Document 1).

[0003] Japanese Patent Publication No. 2024-065657

[0004] This disclosure provides a technology that can improve the yield of substrates.

[0005] A substrate processing apparatus according to one aspect of the present disclosure comprises an etching section and a removal section. The etching section processes SiO on the substrate. ｘ membrane or AlO ｘ The processing solution is brought into contact with a metal film containing Mo or W formed on the surface of the film to etch at least a portion of the metal film. The removal processing unit removes the reaction products between the metal film and the processing solution that adhere to the surface of the substrate by bringing them into contact with the removal solution.

[0006] According to this disclosure, the yield of substrates can be improved. However, the effects described herein are not necessarily limited to those described herein and may include any of the effects described herein.

[0007] Figure 1 is a schematic block diagram showing an example of the configuration of a substrate processing system according to the embodiment. Figure 2 is a flowchart showing an example of the substrate processing procedure performed by the substrate processing system according to the embodiment. Figure 3 is a diagram illustrating an example of the etching process according to the embodiment. Figure 4 is a schematic block diagram showing an example of the configuration of a removal processing unit according to the embodiment. Figure 5A is a diagram illustrating an example of the preparation procedure for the removal solution according to the embodiment. Figure 5B is a diagram illustrating an example of the preparation procedure for the removal solution according to the embodiment. Figure 5C is a diagram illustrating an example of the preparation procedure for the removal solution according to the embodiment. Figure 5D is a diagram illustrating an example of the preparation procedure for the removal solution according to the embodiment. Figure 5E is a diagram illustrating an example of the preparation procedure for the removal solution according to the embodiment. Figure 5F is a diagram illustrating an example of the preparation procedure for the removal solution according to the embodiment. Figure 6A is a diagram illustrating another example of the preparation procedure for the removal solution according to the embodiment. Figure 6B is a diagram illustrating another example of the preparation procedure for the removal solution according to the embodiment. Figure 6C is a diagram illustrating another example of the preparation procedure for the removal solution according to the embodiment. Figure 6D is a diagram illustrating another example of the preparation procedure for the removal solution according to the embodiment. Figure 7 is a schematic block diagram showing another example of the configuration of the removal processing unit according to the embodiment. Figure 8A is a diagram illustrating another example of the rinsing and removal procedures according to the embodiment. Figure 8B is a diagram illustrating another example of the rinsing and removal procedures according to the embodiment. Figure 8C is a diagram illustrating another example of the rinsing and removal procedures according to the embodiment. Figure 8D is a diagram illustrating another example of the rinsing and removal procedures according to the embodiment. Figure 9A is a diagram illustrating another example of the preparation and removal procedures for the removal solution according to the embodiment. Figure 9B is a diagram illustrating another example of the preparation and removal procedures for the removal solution according to the embodiment. Figure 9C is a diagram illustrating another example of the preparation and removal procedures for the removal solution according to the embodiment. Figure 9D is a diagram illustrating another example of the preparation and removal procedures for the removal solution according to the embodiment.Figure 10 is a schematic block diagram showing an example of the configuration of a substrate processing system according to another embodiment. Figure 11 is a schematic diagram showing an example of the specific configuration of a processing unit according to another embodiment. Figure 12 is a flowchart showing an example of a substrate processing procedure performed by a substrate processing system according to another embodiment.

[0008] The embodiments of the substrate processing apparatus disclosed herein will be described in detail below with reference to the attached drawings. However, the embodiments described below do not limit this disclosure. Furthermore, it should be noted that the drawings are schematic, and the dimensional relationships and ratios of each element may differ from reality. Additionally, there may be differences in dimensional relationships or ratios between different parts of the drawings.

[0009] In recent years, advances in lithography technology have led to rapid miniaturization of wiring patterns in the manufacturing of semiconductor devices and liquid crystal display elements. For example, in next-generation semiconductor devices, molybdenum or tungsten are being considered as wiring materials to reduce resistance.

[0010] Furthermore, in the manufacturing process of semiconductor devices and other components, it is necessary to process the metal film of the wiring material into the desired shape through etching. However, there was a risk that the yield of the substrate would decrease due to the reaction products between the metal film, which is generated during this etching process and adheres to the substrate, and the etching solution.

[0011] Therefore, there is a need for technology that can overcome the aforementioned problems and improve the yield of substrates.

[0012] <Configuration of the Substrate Processing System> First, the configuration of the substrate processing system 1 according to the embodiment will be described with reference to Figure 1. Figure 1 is a schematic block diagram showing an example of the configuration of the substrate processing system 1 according to the embodiment. The substrate processing system 1 is an example of a substrate processing apparatus.

[0013] As shown in Figure 1, the substrate processing system 1 according to this embodiment includes a carrier loading / unloading unit 2, a lot formation unit 3, a lot placement unit 4, a lot transport unit 5, a lot processing unit 6, and a control device 7.

[0014] The carrier loading / unloading section 2 comprises a carrier stage 20, a carrier transport mechanism 21, carrier stocks 22 and 23, and a carrier mounting platform 24.

[0015] The carrier stage 20 holds multiple hoops H transported from the outside. A hoop H is a container that holds multiple (for example, 25) wafers W arranged vertically in a horizontal position. The carrier transport mechanism 21 transports the hoops H between the carrier stage 20, carrier stocks 22 and 23, and carrier mounting table 24.

[0016] Multiple wafers W before processing are transported from the hoop H placed on the carrier mounting table 24 to the lot processing unit 6 by the substrate transport mechanism 30, which will be described later. Conversely, multiple processed wafers W are transported from the lot processing unit 6 to the hoop H placed on the carrier mounting table 24 by the substrate transport mechanism 30.

[0017] The lot formation unit 3 has a substrate transport mechanism 30 and forms lots. A lot consists of multiple wafers W (for example, 50 wafers) that are processed simultaneously by combining wafers W housed in one or more hoops H. The multiple wafers W that form one lot are arranged with their plates facing each other and at a certain distance apart.

[0018] The substrate transport mechanism 30 transports multiple wafers W between the hoop H placed on the carrier mounting table 24 and the lot mounting section 4.

[0019] The lot placement unit 4 has a lot transport table 40, which temporarily places (holds) lots that are transported between the lot formation unit 3 and the lot processing unit 6 by the lot transport unit 5. The lot transport table 40 has a placement table 41 for placing lots formed in the lot formation unit 3 before processing, and a placement table 42 for placing lots that have been processed in the lot processing unit 6. Multiple wafers W for one lot are placed on the placement table 41 and the placement table 42 in an upright position, arranged front to back.

[0020] The lot transport unit 5 has a lot transport mechanism 50 and transports lots between the lot placement unit 4 and the lot processing unit 6 or inside the lot processing unit 6. The lot transport mechanism 50 has a rail 51, a movable body 52, and a substrate holder 53.

[0021] The rail 51 is positioned along the X-axis direction, spanning the lot mounting section 4 and the lot processing section 6. The movable body 52 is configured to move along the rail 51 while holding a plurality of wafers W. The substrate holder 53 is provided on the movable body 52 and holds a plurality of wafers W arranged front to back in an upright position.

[0022] The lot processing unit 6 performs etching, rinsing, removal, and drying processes on multiple wafers W in one lot in a single operation. The lot processing unit 6 includes two etching processing units 60, a removal processing unit 70, a cleaning processing unit 80, and a drying processing unit 90, all positioned along a rail 51.

[0023] The etching unit 60 performs etching on multiple wafers W in one lot at once. The removal unit 70 performs removal on multiple wafers W in one lot at once. The cleaning unit 80 performs cleaning on the substrate holder 53. The drying unit 90 performs drying on multiple wafers W in one lot at once. Note that the number of etching unit 60, removal unit 70, cleaning unit 80 and drying unit 90 is not limited to the example in Figure 1.

[0024] The etching processing unit 60 includes an etching tank 61, a rinsing tank 62, and substrate lifting mechanisms 63 and 64.

[0025] The processing tank 61 is capable of accommodating one lot of wafers W arranged in an upright position, and stores an etching solution for etching. The etching solution is an example of a processing solution. The etching solution is, for example, a mixture containing phosphoric acid, acetic acid, and nitric acid, or a mixture containing phosphoric acid and an oxidizing agent.

[0026] The processing tank 62 stores a rinsing solution (such as deionized water) for rinsing. Multiple wafers W that form a lot are held in an upright position, arranged front to back, in the substrate lifting mechanisms 63 and 64.

[0027] The etching processing unit 60 holds the lot transported by the lot transport unit 5 with the substrate lifting mechanism 63 and performs the etching process by immersing it in the etching solution in the processing tank 61.

[0028] The etched lot in the processing tank 61 is transported to the processing tank 62 by the lot transport unit 5. The etching processing unit 60 then holds the transported lot with the substrate lifting mechanism 64 and performs rinsing by immersing it in the rinsing solution in the processing tank 62. The lot that has been rinsed in the processing tank 62 is then transported to the processing tank 71 of the removal processing unit 70 by the lot transport unit 5.

[0029] The removal processing unit 70 includes a removal processing tank 71, a rinsing processing tank 72, and substrate lifting mechanisms 73 and 74.

[0030] A removal treatment tank 71 stores a removal chemical solution (hereinafter also referred to as "removal solution"). The removal solution is, for example, ammonia water, TMAH (Tetramethyl ammonium hydroxide), phosphoric acid, sulfuric acid, hydrochloric acid, or hydrofluoric acid.

[0031] A rinsing tank 72 stores a rinsing solution (such as deionized water) for rinsing. Multiple wafers W for one lot are held in an upright position, arranged front to back, in the substrate lifting mechanisms 73 and 74.

[0032] The removal processing unit 70 holds the lot transported by the lot transport unit 5 with the substrate lifting mechanism 73 and immerses it in the removal liquid in the processing tank 71 to remove reaction products adhering to the wafer W after etching.

[0033] The lot that has been washed in the processing tank 71 is transported to the processing tank 72 by the lot transport unit 5. The removal processing unit 70 then holds the transported lot with the substrate lifting mechanism 74 and performs rinsing by immersing it in the rinsing liquid in the processing tank 72. The lot that has been rinsed in the processing tank 72 is transported to the processing tank 91 of the drying processing unit 90 by the lot transport unit 5.

[0034] The drying section 90 includes a processing tank 91 and a substrate lifting mechanism 92. A processing gas for drying is supplied to the processing tank 91. Multiple wafers W for one lot are held in an upright position, arranged front to back, in the substrate lifting mechanism 92.

[0035] The drying section 90 holds the lots transported by the lot transport section 5 with the substrate lifting mechanism 92 and performs drying using the drying gas supplied into the processing tank 91. The lots that have been dried in the processing tank 91 are transported to the lot placement section 4 by the lot transport section 5.

[0036] The cleaning unit 80 supplies a cleaning solution to the substrate holder 53 of the lot transport mechanism 50, and further supplies a drying gas to clean the substrate holder 53.

[0037] The control device 7 controls the operation of each part of the substrate processing system 1 (carrier loading / unloading unit 2, lot formation unit 3, lot placement unit 4, lot transport unit 5, lot processing unit 6, etc.). The control device 7 controls the operation of each part of the substrate processing system 1 based on signals from switches and various sensors.

[0038] The control device 7 is, for example, a computer and comprises a control unit 8 and a storage unit 9. The storage unit 9 stores programs that control various processes performed in the substrate processing system 1. The control unit 8 controls the operation of each part of the substrate processing system 1 by reading and executing the programs stored in the storage unit 9. The control unit 8 may be one or more circuits, or it may be provided as a single unit or in parts.

[0039] Incidentally, the program read by the control unit 8 may be recorded on a computer-readable storage medium and installed from the storage medium into the storage unit 9 of the control device 7. Examples of the computer-readable storage medium include a hard disk (HD), a flexible disk (FD), a compact disk (CD), a magneto-optical disk (MO), a memory card, and the like.

[0040] <Details of Substrate Processing> Next, the details of the substrate processing according to the embodiment will be described with reference to FIGS. 2 and 3. FIG. 2 is a flowchart showing an example of the procedure of the substrate processing executed by the substrate processing system according to the embodiment.

[0041] In the substrate processing according to the embodiment, first, the control unit 8 transports a lot composed of a plurality of wafers W to the processing tank 61 and immerses them in an etching solution, thereby performing an etching process on the plurality of wafers W included in the lot (step S101).

[0042] As a result, as shown in FIG. 3, a part of the metal film formed on the surface of the SiO ｘ film or the AlO ｘ film (AlO ｘ film in the figure) is etched. This metal film contains Mo or W.

[0043] In the embodiment, the etching solution used for the etching process may be a mixed solution containing phosphoric acid, acetic acid, and nitric acid, or a mixed solution containing phosphoric acid and an oxidizing agent. Thereby, the etching amount of the metal film located on the opening side of the recess T shown in FIG. 3 and the etching amount of the metal film located on the bottom side of the recess T can be made equal.

[0044] On the other hand, in this etching process, for example, when the metal film contains Mo, such Mo reacts with the phosphorus contained in the etching solution, and an oxide PMo ｘ O ｙ (hereinafter, also referred to as "phosphomolybdic acid") is generated as a reaction product.

[0045] This phosphomolybdic acid exists in multiple forms, some of which are insoluble in aqueous solutions. Therefore, in the substrate processing according to this embodiment, even after the etching and rinsing processes are completed, phosphomolybdic acid in the insoluble form may remain as a residue on the surface of the wafer W.

[0046] Therefore, in this embodiment, as shown in Figure 2, it is preferable to perform a removal process (step S104) to remove reaction products such as phosphomolybdic acid from the surface of the wafer W after the etching process (step S101).

[0047] This allows for the removal of reaction products such as phosphomolybdic acid that remain on the wafer W after etching the metal film, thereby improving the yield of the wafer W.

[0048] Following the etching process described above, the control unit 8 transports the lot that has undergone etching in the processing tank 61 to the processing tank 62 and immerses it in the rinsing solution to rinse the multiple wafers W contained in the lot (step S102).

[0049] In this embodiment, in parallel with the etching process (step S101) and the rinsing process (step S102), the control unit 8 performs a preparatory process in the processing tank 71 to prepare the removal solution to be used in the removal process (step S103). Details of this preparatory process will be described later.

[0050] Next, the control unit 8 transports the lot that has been rinsed in the processing tank 62 to the processing tank 71 and immerses it in the removal solution to perform the removal process on multiple wafers W contained in the lot (step S104).

[0051] In this embodiment, the removal solution used in the removal process may be ammonia water, TMAH, phosphoric acid, sulfuric acid, hydrochloric acid, or hydrofluoric acid. This allows for more efficient removal of reaction products remaining on the wafer W after etching the metal film, thereby further improving the yield of the wafer W.

[0052] Furthermore, in this embodiment, the concentration of the removal solution, ammonia water or TMAH, may be 1 wt% to 15 wt%. This allows for more efficient removal of reaction products remaining on the wafer W after etching the metal film, thereby further improving the yield of the wafer W.

[0053] Furthermore, in this embodiment, the concentration of the phosphoric acid used as the removal solution may be 10 wt% to 85 wt%. This allows for more efficient removal of reaction products remaining on the wafer W after etching the metal film, thereby further improving the yield of the wafer W.

[0054] Furthermore, in this embodiment, the concentration of the sulfuric acid used as the removal solution may be 1 wt% to 50 wt%. This allows for more efficient removal of reaction products remaining on the wafer W after etching the metal film, thereby further improving the yield of the wafer W.

[0055] Furthermore, in the embodiment, the concentration of the removal solution, hydrochloric acid or hydrofluoric acid, may be 0.01 wt% to 10 wt%. This allows for more efficient removal of reaction products remaining on the wafer W after etching the metal film, thereby further improving the yield of the wafer W.

[0056] Furthermore, in this embodiment, the temperature of the removal solution in the removal process may be 20°C to 70°C. This allows for more efficient removal of reaction products remaining on the wafer W after etching the metal film, thereby further improving the yield of the wafer W.

[0057] Furthermore, in this embodiment, the etching and removal processes may be performed in a batch process that processes multiple wafers W at once. This allows for efficient substrate processing of a large number of wafers W.

[0058] Returning to the explanation of Figure 2, following the removal process described so far, the control unit 8 transports the lot that has undergone the removal process in the processing tank 71 to the processing tank 72 and immerses it in the rinsing solution to perform a rinsing process on the multiple wafers W contained in the lot (step S105).

[0059] Next, the control unit 8 transports the rinsed lot to the drying unit 90 and supplies a drying gas to dry the multiple wafers W contained in the lot (step S106). This completes the series of substrate processing.

[0060] <Configuration of the Removal Processing Unit> Next, the configuration of the removal processing unit 70, which performs the removal process on the wafer W, will be described with reference to Figure 4. Figure 4 is a schematic block diagram showing an example of the configuration of the removal processing unit 70 according to the embodiment.

[0061] The removal processing unit 70 is, for example, a Point of Use (POU) type substrate processing device. The removal processing unit 70 comprises a substrate processing unit 100, a raw material supply unit 110, and a DIW supply unit 120. The substrate processing unit 100 immerses a plurality of wafers W in the removal liquid and performs the removal process on the plurality of wafers W.

[0062] The stock solution supply unit 110 supplies the stock solution of the removal solution (also simply referred to as "stock solution" in this disclosure) to the substrate processing unit 100. The stock solution supply unit 110 comprises a stock solution supply source 111, a stock solution supply path 112, and a flow rate regulator 113. The flow rate regulator 113 is an example of a first flow rate regulator.

[0063] The stock solution supply source 111 is, for example, a tank for storing the stock solution of the removal liquid. The stock solution supply passage 112 connects the stock solution supply source 111 to the opening 101a of the inner tank 101 in the treatment tank 71, and supplies the stock solution of the removal liquid from the stock solution supply source 111 to the inner tank 101.

[0064] The flow regulator 113 is located in the raw material supply passage 112 and adjusts the flow rate of the raw material for removal supplied to the inner tank 101. The flow regulator 113 includes an on-off valve, a constant pressure valve, and a flow meter. The flow regulator 113 may also include an on-off valve, an LFC (Liquid Flow Controller), and a flow meter.

[0065] The DIW supply unit 120 supplies DIW (Deionized Water) to the substrate processing unit 100. The DIW supply unit 120 comprises a DIW supply source 121, a DIW supply path 122, a heater 123, and a flow rate regulator 124. The flow rate regulator 124 is an example of a second flow rate regulator.

[0066] The DIW supply source 121 is, for example, a tank for storing DIW. The DIW supply passage 122 connects the DIW supply source 121 to the bottom side of the inner tank 101 and supplies DIW from the DIW supply source 121 to the inner tank 101.

[0067] The heater 123 is located in the DIW supply passage 122 and raises the temperature of the DIW supplied to the inner tank 101 to a specified temperature. The flow regulator 124 is located in the DIW supply passage 122 and adjusts the flow rate of the DIW supplied to the inner tank 101. The flow regulator 124 includes an on-off valve, a constant pressure valve, and a flow meter. The flow regulator 124 may also include an on-off valve, an LFC, and a flow meter.

[0068] The substrate processing unit 100 comprises a processing tank 71, a substrate lifting mechanism 73, a gas supply unit 130, and liquid discharge units 140 and 150. The gas supply unit 130 is an example of a stirring mechanism. The processing tank 71 has an inner tank 101, an outer tank 102, and a liquid level sensor 103.

[0069] The inner tank 101 is a tank for immersing multiple wafers W in the removal liquid, and it contains the removal liquid for immersion. The inner tank 101 has an opening 101a at the top, and the removal liquid is stored up to the vicinity of the opening 101a.

[0070] In the inner tank 101, multiple wafers W are immersed in the removal solution using a substrate lifting mechanism 73, and the removal process is performed on these multiple wafers W. The substrate lifting mechanism 73 is configured to be able to move up and down and holds the multiple wafers W in a vertical position, arranged front to back.

[0071] The outer tank 102 is located outside the inner tank 101, surrounding it on all four sides in a plan view, and receives the removal liquid and other fluids flowing out from the opening 101a of the inner tank 101. As shown in Figure 4, the liquid level in the outer tank 102 is maintained lower than the liquid level in the inner tank 101.

[0072] The gas supply unit 130 supplies nitrogen gas or air (nitrogen gas in the diagram) to the bottom of the inner tank 101 where the removal liquid is stored. As a result, bubbles of nitrogen gas or air are discharged to the bottom of the inner tank 101.

[0073] The gas supply unit 130 includes a gas supply source 131, a gas supply passage 132, a flow regulator 133, and a plurality of gas nozzles 134.

[0074] The gas supply source 131 is, for example, a gas tank that stores nitrogen gas or air. The gas supply line 132 connects the gas supply source 131 to a plurality of gas nozzles 134 and supplies nitrogen gas or air from the gas supply source 131 to the plurality of gas nozzles 134.

[0075] The flow regulator 133 is located in the gas supply passage 132 and adjusts the amount of nitrogen gas or air supplied to the multiple gas nozzles 134. The flow regulator 133 includes an on-off valve, a flow control valve, and a flow meter.

[0076] The multiple gas nozzles 134 are positioned, for example, in multiple rows (six rows in the figure) below the wafer W inside the inner tank 101. The multiple gas nozzles 134 discharge nitrogen gas or air bubbles upward into the removal liquid stored in the inner tank 101, forming an upward flow inside the inner tank 101.

[0077] The liquid discharge section 140 discharges the liquid stored in the inner tank 101 to the drain section DR. The liquid discharge section 140 has a liquid discharge passage 141 and a flow rate regulator 142. The liquid discharge passage 141 connects the bottom surface of the inner tank 101 and the drain section DR, and discharges the liquid from the inner tank 101 to the drain section DR.

[0078] The flow regulator 142 is located in the liquid discharge passage 141 and adjusts the amount of liquid discharged to the drain section DR. The flow regulator 142 includes an on-off valve, a flow control valve, and a flow meter.

[0079] The liquid discharge section 150 discharges the liquid stored in the outer tank 102 to the drain section DR. The liquid discharge section 150 has a liquid discharge passage 151 and a flow rate regulator 152. The liquid discharge passage 151 connects the bottom surface of the outer tank 102 and the drain section DR, and discharges the liquid from the outer tank 102 to the drain section DR.

[0080] The flow regulator 152 is located in the liquid discharge passage 151 and adjusts the amount of liquid discharged to the drain section DR. The flow regulator 152 includes an on-off valve, a flow control valve, and a flow meter.

[0081] <Details of Preparation Process> Next, the details of the preparation process for the removal solution in the substrate processing system 1 according to the embodiment will be explained with reference to Figures 5A to 9D. Figures 5A to 5F are diagrams illustrating an example of the procedure for preparing the removal solution according to the embodiment.

[0082] As shown in Figure 5A, the control unit 8 (see Figure 1) fills the inner tank 101 with DIW at a specified temperature prior to the preparation of the removal liquid. For example, if the removal liquid to be prepared in the inner tank 101 next is at room temperature, the control unit 8 fills the inner tank 101 with DIW at room temperature.

[0083] Furthermore, if the removal liquid to be prepared in the inner tank 101 is at a temperature higher than room temperature, the control unit 8 fills the inner tank 101 with DIW (HDIW) heated by the heater 123 (see Figure 4). This DIW is supplied to the inner tank 101, for example, after the inner tank 101 has been rinsed following the previous removal treatment.

[0084] Next, the control unit 8 (see Figure 1) controls the liquid discharge unit 140, as shown in Figure 5B, to discharge all of the DIW stored in the inner tank 101 from the inner tank 101.

[0085] Next, the control unit 8 (see Figure 1) controls the DIW supply unit 120 to supply a given temperature and a given amount of DIW to the inner tank 101, as shown in Figure 5C. This given amount is, for example, half the amount of DIW required to bring the removal solution to a given concentration.

[0086] Next, the control unit 8 (see Figure 1) controls the stock solution supply unit 110 to supply a given amount of stock solution to the inner tank 101, as shown in Figure 5D. This given amount is, for example, the amount of stock solution needed to bring the removal solution to a given concentration. As a result, a mixture of the stock solution and DIW is generated inside the inner tank 101.

[0087] Next, the control unit 8 (see Figure 1) controls the DIW supply unit 120 to supply a given temperature and a given amount of DIW to the inner tank 101, as shown in Figure 5E. This given amount is, for example, half the amount of DIW required to bring the removal solution to a given concentration. As a result, the inside of the inner tank 101 is filled with a mixture of the undiluted removal solution and DIW.

[0088] Next, the control unit 8 (see Figure 1) controls the gas supply unit 130 to supply nitrogen gas or air to the inside of the inner tank 101 from multiple gas nozzles 134, as shown in Figure 5F. As a result, the rising flow formed inside the inner tank 101 agitates the inside of the inner tank 101, and the mixture of the raw removal liquid and DIW becomes the removal liquid. This completes the preparation process for the removal liquid.

[0089] In the examples shown in Figures 5A to 5F described above, the amount of undiluted removal solution used in the preparation process of the removal solution can be minimized. Therefore, according to the examples in Figures 5A to 5F, the operating costs of the removal process can be reduced.

[0090] Figures 6A to 6D illustrate another example of the procedure for preparing the removal solution according to the embodiment. As shown in Figure 6A, the control unit 8 (see Figure 1) fills the inner tank 101 with DIW at a specified temperature prior to the preparation of the removal solution. This process is the same as the process shown in Figure 5A above.

[0091] Next, the control unit 8 (see Figure 1) controls the liquid discharge unit 140, as shown in Figure 6B, to discharge a portion of the DIW stored in the inner tank 101 from the inner tank 101. The amount of DIW left in the inner tank 101 during this discharge process is, for example, the amount of DIW required to bring the removal liquid to a given concentration, and is controlled by the liquid level sensor 103.

[0092] Next, the control unit 8 (see Figure 1) controls the stock solution supply unit 110 to supply a given amount of stock solution to the inner tank 101, as shown in Figure 6C. This given amount is, for example, the amount of stock solution needed to bring the removal solution to a given concentration. As a result, the inside of the inner tank 101 is filled with a mixture of stock solution and DIW.

[0093] Next, the control unit 8 (see Figure 1) controls the gas supply unit 130 to supply nitrogen gas or air to the inside of the inner tank 101 from multiple gas nozzles 134, as shown in Figure 6D. As a result, the rising flow formed inside the inner tank 101 agitates the inside of the inner tank 101, and the mixture of the raw removal liquid and DIW becomes the removal liquid. This completes the preparation process for the removal liquid.

[0094] In the examples shown in Figures 6A to 6D described above, the amount of undiluted removal solution used in the preparation process of the removal solution can be minimized. Therefore, according to the examples in Figures 6A to 6D, the operating costs of the removal process can be reduced.

[0095] Furthermore, in this embodiment, as shown in Figures 5F and 6D, the inside of the inner tank 101 may be stirred by the gas supply unit 130 during the preparation process of the removal liquid. This allows for efficient stirring of the inside of the inner tank 101, thereby shortening the preparation time for the removal liquid.

[0096] In addition, Figures 5F and 6D show an example in which a gas supply unit 130 is used as an example of a stirring mechanism for stirring the inside of the inner tank 101, but this disclosure is not limited to such an example.

[0097] For example, a megasonic device may be separately installed on the bottom surface of the inner tank 101, and the inside of the inner tank 101 may be stirred by irradiating the inside of the inner tank 101 with ultrasonic waves from the megasonic device. This megasonic device is an example of another stirring mechanism.

[0098] This also allows for efficient stirring of the contents of the inner tank 101, thereby shortening the preparation time for the removal liquid.

[0099] Furthermore, in this disclosure, the frequency of the ultrasonic waves emitted from the megasonic device may be between 600 kHz and 1200 kHz. This allows for more efficient stirring of the inside of the inner tank 101, thereby further shortening the preparation time for the removal liquid.

[0100] In this disclosure, the gas supply unit 130 and the megasonic device are not limited to operating during the preparation process of the removal solution, but may also operate during the removal process. This allows for more efficient removal of reaction products remaining on the wafer W after etching the metal film, thereby further improving the yield of the wafer W.

[0101] Figure 7 is a schematic block diagram showing another example of the configuration of the removal processing unit 70 according to the embodiment. In the example of Figure 7, the configuration of the raw liquid supply unit 110 and the DIW supply unit 120 differs from the example of Figure 4.

[0102] Specifically, in the example shown in Figure 7, the DIW supply unit 120 further includes a mixing unit 125 and a flow regulator 126 downstream of the flow regulator 124. The raw liquid supply unit 110 supplies the raw liquid of the removal solution to the mixing unit 125.

[0103] The mixing unit 125 mixes the raw material for the removal solution supplied from the raw material supply unit 110 with the DIW supplied from the DIW supply unit 120 to produce a removal solution of a given concentration and temperature.

[0104] The flow regulator 126 is located downstream of the mixing section 125 in the DIW supply path 122 and adjusts the flow rate of the removal liquid supplied to the inner tank 101. The flow regulator 126 includes an on-off valve, a constant pressure valve, and a flow meter. The flow regulator 126 may also include an on-off valve, an LFC, and a flow meter.

[0105] Figures 8A to 8D illustrate another example of the rinsing and removal procedures according to the embodiment. The processes shown in Figures 8A to 9D are performed in the removal processing unit 70 shown in Figure 7.

[0106] As shown in Figure 8A, the control unit 8 (see Figure 1) fills the inner tank 101 with DIW at a specified temperature. This process is the same as the process shown in Figure 5A above.

[0107] Next, as shown in Figure 8B, the control unit 8 (see Figure 1) transports the lot that has undergone etching in the processing tank 61 (see Figure 1) to the processing tank 71 and immerses it in the rinsing solution DIW to rinse the multiple wafers W contained in the lot. This is the process shown in step S102 in Figure 2.

[0108] Next, the control unit 8 (see Figure 1) controls the liquid discharge unit 140, as shown in Figure 8C, to discharge all of the DIW stored in the inner tank 101 from the inner tank 101. At this time, the multiple wafers W remain inside the inner tank 101.

[0109] Next, as shown in Figure 8D, the control unit 8 (see Figure 1) controls the stock solution supply unit 110 and the DIW supply unit 120 to supply a removal solution of a given temperature and concentration to the inner tank 101, filling the inside of the inner tank 101 with the removal solution. As a result, multiple wafers W are immersed in the removal solution in the inner tank 101, and the removal process is performed on multiple wafers W.

[0110] In the examples shown in Figures 8A to 8D described above, the amount of undiluted removal solution used in the preparation process of the removal solution can be minimized. Therefore, according to the examples in Figures 8A to 8D, the operating costs of the removal process can be reduced.

[0111] Figures 9A to 9D illustrate another example of the preparation and removal procedures for the removal solution according to the embodiment. As shown in Figure 9A, the control unit 8 (see Figure 1) fills the inner tank 101 with DIW at a specified temperature prior to the preparation of the removal solution. This process is the same as the process shown in Figure 5A above.

[0112] Next, the control unit 8 (see Figure 1) controls the liquid discharge unit 140, as shown in Figure 9B, to discharge all of the DIW stored in the inner tank 101 from the inner tank 101.

[0113] Next, as shown in Figure 9C, the control unit 8 (see Figure 1) supplies a removal solution of a given temperature and concentration to the inner tank 101, filling the inside of the inner tank 101 with the removal solution. This completes the preparation process of the removal solution in the inner tank 101.

[0114] Next, as shown in Figure 9D, the control unit 8 (see Figure 1) transports the lot that has undergone etching and rinsing treatment to the processing tank 71 and immerses it in the removal solution to perform the removal treatment on multiple wafers W contained in the lot.

[0115] In the examples shown in Figures 9A to 9D described above, the amount of undiluted removal solution used in the preparation process of the removal solution can be minimized. Therefore, according to the examples in Figures 9A to 9D, the operating costs of the removal process can be reduced.

[0116] Furthermore, although the embodiments described so far have shown an example in which the rinsing treatment after the removal treatment is performed in a processing tank 72 different from the processing tank 71, the present disclosure is not limited to such an example. For example, after performing the removal treatment in the processing tank 71, the removal liquid may be discharged from the processing tank 71 with the wafers W still in place, and then the rinsing treatment after the removal treatment may be performed by supplying the processing tank 71 with a rinsing liquid, DIW.

[0117] <Another Embodiment> Next, another embodiment of the present disclosure will be described with reference to Figures 10 to 12. Figure 10 is a schematic block diagram showing an example of the configuration of a substrate processing system 200 according to another embodiment.

[0118] The substrate processing system 200 is another example of a substrate processing apparatus. As shown in Figure 10, the substrate processing system 200 comprises an input / output station 202 and a processing station 203. The input / output station 202 and the processing station 203 are located adjacent to each other.

[0119] The loading / unloading station 202 comprises a carrier mounting section 211 and a transport section 212. Multiple hoops H for accommodating multiple wafers W in a horizontal position are mounted on the carrier mounting section 211.

[0120] The transport unit 212 is provided adjacent to the carrier mounting unit 211 and includes a substrate transport device 213 and a transfer unit 214 inside. The substrate transport device 213 includes a wafer holding mechanism for holding the wafer W. The substrate transport device 213 is also capable of moving horizontally and vertically, as well as rotating about the vertical axis, and transports the wafer W between the hoop H and the transfer unit 214 using the wafer holding mechanism.

[0121] The processing station 203 is located adjacent to the transport unit 212. The processing station 203 comprises a transport unit 215 and a plurality of processing units 216. The plurality of processing units 216 are arranged side by side on both sides of the transport unit 215.

[0122] The transport unit 215 is equipped with a substrate transport device 217 inside. The substrate transport device 217 is equipped with a wafer holding mechanism for holding wafers W. The substrate transport device 217 is also capable of moving horizontally and vertically, as well as rotating about a vertical axis, and transports wafers W between the transfer unit 214 and the processing unit 216 using the wafer holding mechanism.

[0123] The processing unit 216 performs predetermined substrate processing on the wafer W transported by the substrate transport device 217.

[0124] Furthermore, the substrate processing system 200 includes a control device 204. The control device 204 is, for example, a computer and comprises a control unit 218 and a storage unit 219. The storage unit 219 stores programs that control various processes performed in the substrate processing system 200. The control unit 218 controls the operation of the substrate processing system 200 by reading and executing the programs stored in the storage unit 219.

[0125] Such a program may have been recorded on a computer-readable storage medium and installed from that storage medium to the storage unit 219 of the control device 204. Examples of computer-readable storage mediums include hard disks (HDs), flexible disks (FDs), compact disks (CDs), magnetic optical disks (MOs), and memory cards.

[0126] In the substrate processing system 200 configured as described above, first, the substrate transport device 213 of the loading / unloading station 202 takes out a wafer W from the hoop H placed on the carrier mounting section 211 and places the removed wafer W on the transfer section 214. The wafer W placed on the transfer section 214 is then taken out of the transfer section 214 by the substrate transport device 217 of the processing station 203 and transported to the processing unit 216.

[0127] The wafer W, which has been brought into the processing unit 216, is processed by the processing unit 216 and then removed from the processing unit 216 by the substrate transport device 217 and placed on the transfer unit 214. The processed wafer W placed on the transfer unit 214 is then returned to the hoop H of the carrier placement unit 211 by the substrate transport device 213.

[0128] Figure 11 is a schematic diagram showing an example of a specific configuration of a processing unit 216 according to another embodiment. As shown in Figure 11, the processing unit 216 comprises a chamber 220, a substrate processing unit 230, a liquid supply unit 240, a recovery cup 250, an etching processing unit 260, a removal processing unit 270, and a rinsing processing unit 290.

[0129] The chamber 220 houses the substrate processing unit 230, the liquid supply unit 240, and the recovery cup 250. An FFU (Fan Filter Unit) 221 is provided on the ceiling of the chamber 220. The FFU 221 creates a downflow within the chamber 220.

[0130] The substrate processing unit 230 comprises a holding unit 231, a support column 232, and a drive unit 233, and performs liquid treatment on the placed wafer W. The holding unit 231 holds the wafer W horizontally. The support column 232 is a member that extends in the vertical direction, with its base end rotatably supported by the drive unit 233, and its tip horizontally supporting the holding unit 231. The drive unit 233 rotates the support column 232 around a vertical axis.

[0131] The substrate processing unit 230 rotates the support column 232 using the drive unit 233, thereby rotating the holding portion 231 supported by the support column 232, and thereby rotating the wafer W held by the holding portion 231.

[0132] A holding member 231a is provided on the upper surface of the holding portion 231 of the substrate processing unit 230 to hold the wafer W from the side. The wafer W is held horizontally by this holding member 231a, slightly separated from the upper surface of the holding portion 231. The wafer W is held in the holding portion 231 with the surface to be processed facing upwards.

[0133] The liquid supply unit 240 supplies processing fluid to the wafer W. The liquid supply unit 240 includes nozzles 241a and 241b, an arm 242a that horizontally supports the nozzles 241a and 241b, and a swivel and lifting mechanism 243a that rotates and raises the arm 242a. The liquid supply unit 240 also includes a nozzle 241c, an arm 242b that horizontally supports the nozzle 241c, and a swivel and lifting mechanism 243b that rotates and raises the arm 242b.

[0134] The recovery cup 250 is positioned to surround the holding unit 231 and collects the processing fluid scattered from the wafer W as the holding unit 231 rotates. A drain port 251 is formed at the bottom of the recovery cup 250, and the processing fluid collected by the recovery cup 250 is discharged to the outside of the processing unit 216 through this drain port 251. An exhaust port 252 is also formed at the bottom of the recovery cup 250 to discharge the gas supplied from the FFU 221 to the outside of the processing unit 216.

[0135] The etching processing unit 260 supplies an etching solution to the wafer W held in the holding unit 231 and performs an etching process on the wafer W. The etching processing unit 260 includes an etching solution supply source 261, an etching solution supply path 262, and a flow rate regulator 263.

[0136] The etching solution supply source 261 is, for example, a tank for storing etching solution. The etching solution supply passage 262 connects the etching solution supply source 261 and the nozzle 241a, supplying etching solution from the etching solution supply source 261 to the nozzle 241a.

[0137] The flow regulator 263 is located in the etching solution supply passage 262 and adjusts the flow rate of the etching solution supplied to the nozzle 241a. The flow regulator 263 includes an on-off valve, a flow control valve, and a flow meter.

[0138] The removal processing unit 270 supplies a removal liquid to the wafer W held in the holding unit 231 and performs a removal process on the wafer W. The removal processing unit 270 includes a stock liquid supply source 271, a stock liquid supply path 272, a flow rate regulator 273, a DIW supply source 274, a DIW supply path 275, a flow rate regulator 276, a mixing unit 277, a removal liquid supply path 278, a heater 279, and a flow rate regulator 280.

[0139] The stock solution supply source 271 is, for example, a tank for storing the stock solution of the removal liquid. The stock solution supply passage 272 connects the stock solution supply source 271 and the mixing unit 277, supplying the stock solution of the removal liquid from the stock solution supply source 271 to the mixing unit 277.

[0140] The flow regulator 273 is located in the raw material supply passage 272 and adjusts the flow rate of the raw material for removal supplied to the mixing section 277. The flow regulator 273 includes an on / off valve, a flow control valve, and a flow meter.

[0141] The DIW supply source 274 is, for example, a tank for storing DIW. The DIW supply line 275 connects the DIW supply source 274 and the mixing unit 277, supplying DIW from the DIW supply source 274 to the mixing unit 277.

[0142] The flow regulator 276 is located in the DIW supply path 275 and adjusts the flow rate of DIW supplied to the mixing section 277. The flow regulator 276 includes an on-off valve, a flow control valve, and a flow meter.

[0143] The mixing unit 277 mixes the raw material of the removal solution supplied from the raw material supply source 271 with the DIW supplied from the DIW supply source 274 to produce a removal solution of a given concentration.

[0144] The removal liquid supply passage 278 connects the mixing unit 277 and the nozzle 241b, supplying the removal liquid from the mixing unit 277 to the nozzle 241b. The heater 279 is located in the removal liquid supply passage 278 and raises the temperature of the removal liquid supplied to the nozzle 241b to a specified temperature.

[0145] The flow regulator 280 is located in the removal liquid supply passage 278 and adjusts the flow rate of the removal liquid supplied to the nozzle 241b. The flow regulator 280 includes an on-off valve, a flow control valve, and a flow meter.

[0146] The rinsing section 290 supplies rinsing liquid to the wafer W held in the holding section 231 and performs a rinsing treatment on the wafer W. The rinsing section 290 includes a DIW supply source 291, a DIW supply path 292, and a flow rate regulator 293.

[0147] The DIW supply source 291 is, for example, a tank for storing DIW, which is a rinsing liquid. The DIW supply passage 292 connects the DIW supply source 291 and the nozzle 241c, supplying DIW, which is a rinsing liquid, from the DIW supply source 291 to the nozzle 241c.

[0148] The flow regulator 293 is located in the DIW supply path 292 and adjusts the flow rate of DIW supplied to the nozzle 241c. The flow regulator 293 includes an on-off valve, a flow control valve, and a flow meter.

[0149] Next, details of substrate processing according to another embodiment will be described with reference to Figure 12. Figure 12 is a flowchart showing an example of a substrate processing procedure performed by the substrate processing system 200 according to another embodiment.

[0150] In another embodiment of substrate processing, first, the control unit 218 transports the wafer W from the hoop H to the holding unit 231 of the processing unit 216.

[0151] Next, the control unit 218 controls the substrate processing unit 230, the liquid supply unit 240, and the etching processing unit 260, etc., to supply etching solution to the surface of the wafer W that is held and rotated by the holding unit 231, and to perform etching on the wafer W (step S201). The various parameters of the etching solution in another embodiment are the same as in the embodiment described above.

[0152] Next, the control unit 218 controls the substrate processing unit 230, the liquid supply unit 240, and the rinse processing unit 290, etc., to supply rinse liquid to the surface of the wafer W that is held and rotated in the holding unit 231, thereby performing a rinse treatment on the wafer W (step S202).

[0153] Next, the control unit 218 controls the substrate processing unit 230, the liquid supply unit 240, and the removal processing unit 270, etc., to supply the removal liquid to the surface of the wafer W that is held and rotated by the holding unit 231, and to perform the removal process on the wafer W (step S203). The various parameters of the removal liquid in another embodiment are the same as in the embodiment described above.

[0154] Next, the control unit 218 controls the substrate processing unit 230, the liquid supply unit 240, and the rinse processing unit 290, etc., to supply rinse liquid to the surface of the wafer W that is held and rotated in the holding unit 231, thereby performing a rinse treatment on the wafer W (step S204).

[0155] Finally, the control unit 218 controls the substrate processing unit 230 and the like to rotate the wafer W held in the holding unit 231 at high speed, and performs a drying treatment on the wafer W (step S205), thereby completing the series of substrate processing.

[0156] In another embodiment, similar to the embodiment described above, a removal process (step S204) may be performed to remove reaction products such as phosphomolybdic acid from the surface of the wafer W after the etching process (step S201).

[0157] This allows for the removal of reaction products such as phosphomolybdic acid that remain on the wafer W after etching the metal film, thereby improving the yield of the wafer W.

[0158] In another embodiment, the etching and removal processes may be performed in a single-wafer processing manner, where each wafer W is processed individually. This allows for substrate processing of the wafer W with minimal variation.

[0159] The substrate processing apparatus (substrate processing systems 1 and 200) according to the embodiment includes an etching processing unit 60, 260 and a removal processing unit 70, 270. The etching processing units 60, 260 contact a processing liquid (etching liquid) with a metal film containing Mo or W formed on the surface of a SiO ｘ film or an AlO ｘ film on the substrate (wafer W) to etch at least a part of the metal film

[0160] The removal processing units 70, 270 contact the reaction product of the metal film adhering to the surface of the substrate (wafer W) and the processing liquid (etching liquid) with a removal liquid to remove it. Thereby, the yield of the wafer W can be improved.

[0161] In the substrate processing apparatus (substrate processing systems 1 and 200) according to the embodiment, the processing liquid (etching liquid) is a mixed liquid containing phosphoric acid, acetic acid, and nitric acid, or a mixed liquid containing phosphoric acid and an oxidizing agent. Thereby, the etching amount of the metal film located on the opening side of the concave portion T and the etching amount of the metal film located on the bottom side of the concave portion T can be made equal.

[0162] In the substrate processing apparatus (substrate processing systems 1 and 200) according to the embodiment, the reaction product is an oxide of P and Mo.

[0163] In the substrate processing apparatus (substrate processing systems 1 and 200) according to the embodiment, the removal liquid is ammonia water or TMAH. Thereby, the yield of the wafer W can be further improved.

[0164] In the substrate processing apparatus (substrate processing systems 1 and 200) according to the embodiment, the removal liquid is phosphoric acid. Thereby, the yield of the wafer W can be further improved.

[0165] Furthermore, in the substrate processing apparatus (substrate processing systems 1 and 200) according to the embodiment, the concentration of the removal solution, which is phosphoric acid, is 10 wt% to 85 wt%. This makes it possible to further improve the yield of wafer W.

[0166] Furthermore, in the substrate processing apparatus (substrate processing system 1, 200) according to the embodiment, the removal solution is sulfuric acid, hydrochloric acid, or hydrofluoric acid. This makes it possible to further improve the yield of wafer W.

[0167] Furthermore, in the substrate processing apparatus (substrate processing systems 1 and 200) according to the embodiment, the concentration of the removal solution is 1 wt% to 50 wt% in the case of sulfuric acid, and 0.01 wt% to 10 wt% in the case of hydrochloric acid or hydrofluoric acid. This makes it possible to further improve the yield of wafers W.

[0168] Furthermore, in the substrate processing apparatus (substrate processing systems 1 and 200) according to the embodiment, the temperature of the removal solution is 20°C to 70°C. This makes it possible to further improve the yield of the wafer W.

[0169] Furthermore, in the substrate processing apparatus (substrate processing system 1) according to the embodiment, the removal processing unit 70 includes a processing tank 71 for storing the removal liquid and a liquid level sensor 103 installed in the processing tank 71. The removal liquid is produced by weighing the amount of DIW or HDIW stored in the processing tank 71 with the liquid level sensor 103, and then supplying the raw material of the removal liquid to the processing tank 71. This makes it possible to minimize the amount of raw material of the removal liquid used in the preparation process of the removal liquid.

[0170] Furthermore, in the substrate processing apparatus (substrate processing system 1) according to the embodiment, the removal processing unit 70 includes a processing tank 71 for storing the removal liquid, a first flow rate regulator (flow rate regulator 113), and a second flow rate regulator (flow rate regulator 124). The first flow rate regulator (flow rate regulator 113) adjusts the flow rate of the raw removal liquid supplied to the processing tank 71. The second flow rate regulator (flow rate regulator 124) adjusts the flow rate of DIW or HDIW supplied to the processing tank 71. The removal liquid is produced by supplying the raw removal liquid and DIW or HDIW to the processing tank 71 at a given flow rate ratio using the first flow rate regulator (flow rate regulator 113) and the second flow rate regulator (flow rate regulator 124). This makes it possible to minimize the amount of raw removal liquid used in the preparation process of the removal liquid.

[0171] Furthermore, in the substrate processing apparatus (substrate processing system 1) according to the embodiment, the removal processing unit 70 includes a processing tank 71 for storing the removal liquid and a stirring mechanism (gas supply unit 130) for agitating the inside of the processing tank 71 by discharging at least one of nitrogen gas and air into the processing tank 71. This makes it possible to shorten the preparation time for the removal liquid.

[0172] Furthermore, in the substrate processing apparatus (substrate processing system 1) according to the embodiment, the removal processing unit 70 includes a processing tank 71 for storing the removal liquid, and another stirring mechanism (megasonic device) for stirring the inside of the processing tank 71 by irradiating it with ultrasonic waves. This makes it possible to shorten the preparation time for the removal liquid.

[0173] Furthermore, in the substrate processing apparatus (substrate processing system 1) according to this embodiment, the frequency of the ultrasonic waves irradiated from another stirring mechanism (megasonic device) is 600 kHz to 1200 kHz. This further reduces the preparation time for the removal solution.

[0174] Furthermore, in the substrate processing apparatus (substrate processing system 1) according to the embodiment, the etching processing unit 60 and the removal processing unit 70 perform batch processing to process multiple substrates (wafers W) at once. This makes it possible to efficiently process a large number of wafers W.

[0175] Furthermore, in the substrate processing apparatus (substrate processing system 200) according to the embodiment, the etching processing unit 260 and the removal processing unit 270 perform single-wafer processing, processing multiple substrates (wafers W) one by one. This makes it possible to process wafers W with small variations.

[0176] While embodiments of this disclosure have been described above, this disclosure is not limited to the embodiments described above, and various modifications are possible without departing from its spirit.

[0177] For example, the embodiments described above show examples in which both the etching and removal processes are performed in batch processing, or in single-wafer processing, but the disclosure is not limited to such examples.

[0178] For example, in the technology of this disclosure, the etching process may be performed in batch processing and the removal process may be performed in single-wafer processing, or the etching process may be performed in single-wafer processing and the removal process may be performed in batch processing. In this case as well, reaction products such as phosphomolybdic acid that remain on the wafer W after etching the metal film can be efficiently removed, thereby improving the yield of the wafer W.

[0179] Furthermore, although the above embodiment shows an example in which a rinsing treatment is performed between the etching treatment and the removal treatment, this disclosure is not limited to such an example. For example, if the etching solution and the removal solution do not react with each other, the removal treatment may be performed directly after the etching treatment without performing a rinsing treatment. This makes it possible to shorten the substrate processing time.

[0180] The embodiments disclosed herein should be considered in all respects to be illustrative and not restrictive. Indeed, the embodiments described above can be embodied in a variety of forms. Furthermore, the embodiments described above may be omitted, replaced, or modified in various ways without departing from the scope and spirit of the appended claims.

[0181] 1 Substrate processing system (an example of a substrate processing apparatus) 60 Etching processing section 70 Removal processing section 113 Flow rate regulator (an example of a first flow rate regulator) 124 Flow rate regulator (an example of a second flow rate regulator) 130 Gas supply section (an example of a stirring mechanism) 200 Substrate processing system (an example of a substrate processing apparatus) 260 Etching processing section 270 Removal processing section W Wafer (an example of a substrate)

Claims

1. SiO on the substrate ｘ membrane or AlO ｘ A substrate processing apparatus comprising: an etching processing unit that contacts a metal film containing Mo or W formed on the surface of a film with a processing solution to etch at least a portion of the metal film; and a removal processing unit that removes reaction products between the metal film and the processing solution adhering to the surface of the substrate by contacting them with a removal solution.

2. The substrate processing apparatus according to claim 1, wherein the processing solution is a mixture containing phosphoric acid, acetic acid, and nitric acid, or a mixture containing phosphoric acid and an oxidizing agent.

3. The substrate processing apparatus according to claim 1 or 2, wherein the reaction product is an oxide of phosphorus and Mo.

4. The substrate processing apparatus according to claim 1 or 2, wherein the removal liquid is ammonia water or TMAH.

5. The substrate processing apparatus according to claim 4, wherein the concentration of the removal solution is 1 wt% to 15 wt%.

6. The substrate processing apparatus according to claim 1 or 2, wherein the removal solution is phosphoric acid.

7. The substrate processing apparatus according to claim 6, wherein the concentration of the removal solution is 10 wt% to 85 wt%.

8. The substrate processing apparatus according to claim 1 or 2, wherein the removal solution is sulfuric acid, hydrochloric acid, or hydrofluoric acid.

9. The substrate processing apparatus according to claim 8, wherein the concentration of the removal solution is 1 wt% to 50 wt% in the case of sulfuric acid, and 0.01 wt% to 10 wt% in the case of hydrochloric acid or hydrofluoric acid.

10. The substrate processing apparatus according to claim 1 or 2, wherein the temperature of the removal liquid is 20°C to 70°C.

11. The substrate processing apparatus according to claim 1 or 2, wherein the removal processing unit comprises a processing tank for storing the removal liquid and a liquid level sensor installed in the processing tank, and the removal liquid is produced by weighing the amount of DIW or HDIW stored in the processing tank with the liquid level sensor and then supplying the raw solution of the removal liquid to the processing tank.

12. The substrate processing apparatus according to claim 1 or 2, wherein the removal processing unit comprises a processing tank for storing the removal liquid, a first flow rate regulator for adjusting the flow rate of the raw removal liquid supplied to the processing tank, and a second flow rate regulator for adjusting the flow rate of DIW or HDIW supplied to the processing tank, and the removal liquid is produced by supplying the raw removal liquid and DIW or HDIW to the processing tank in a given flow rate ratio using the first flow rate regulator and the second flow rate regulator.

13. The substrate processing apparatus according to claim 1 or 2, wherein the removal processing unit comprises a processing tank for storing the removal liquid and a stirring mechanism for discharging at least one of nitrogen gas and air into the processing tank to agitate the inside of the processing tank.

14. The substrate processing apparatus according to claim 1 or 2, wherein the removal processing unit comprises a processing tank for storing the removal liquid and another stirring mechanism for stirring the inside of the processing tank by irradiating the inside of the processing tank with ultrasonic waves.

15. The substrate processing apparatus according to claim 14, wherein the frequency of the ultrasonic waves irradiated from the other stirring mechanism is 600 kHz to 1200 kHz.

16. The substrate processing apparatus according to claim 1 or 2, wherein the etching processing unit and the removal processing unit perform batch processing to process a plurality of substrates at once.

17. The substrate processing apparatus according to claim 1 or 2, wherein the etching processing unit and the removal processing unit perform single-wafer processing, processing a plurality of substrates one by one.

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