Method for manufacturing semiconductor device and temporary fixing material for silicon carrier substrate

Abstract

This method for manufacturing a semiconductor device includes: a step for preparing a laminate that is provided with a silicon carrier substrate and an organic temporary fixing material that is laminated on the silicon carrier substrate; a step for temporarily fixing a semiconductor member to a support member via the organic temporary fixing material; a step for processing the semiconductor member that has been temporarily fixed to the support member; and a step for irradiating the organic temporary fixing material of the laminate with light including infrared light from the silicon carrier substrate side so as to separate the semiconductor member from the support member.

Description

Method for manufacturing a semiconductor device and temporary fixing material for silicon carrier substrates

[0001] This invention relates to a method for manufacturing a semiconductor device and a temporary fixing material for a silicon carrier substrate.

[0002] Semiconductor devices are sometimes manufactured by processing semiconductor components while they are temporarily fixed to a support member, and then separating the semiconductor components from the support member. For example, Patent Document 1 discloses a method in which a semiconductor component is temporarily fixed to a support member via a temporary fixing material layer, and then separated from the support member by light irradiation after processing. Various carrier substrates such as glass carrier substrates, resin carrier substrates, and silicon carrier substrates are used as the support member.

[0003] Silicon carrier substrates offer advantages in terms of contamination prevention and shape stability. For example, Non-Patent Document 1 below proposes a debonding technique using an infrared laser on a silicon carrier substrate with an inorganic thin film layer.

[0004] International Publication No. 2020 / 111193

[0005] “IR Laser Debond From Silicon Carrier Wafers With Inorganic Thin Film Release Layers for High-Density 2.5D and 3D Integration”, Thomas Sounart, Tushar Talukdar, et al. , IEEE 74th Electronic Components and Technology Conference (ECTC), p. 363-369, (2024)

[0006] From the perspective of enhancing cost competitiveness in semiconductor device manufacturing, the reuse of silicon carrier substrates is desirable. When an inorganic thin film layer is applied to a silicon carrier substrate, pretreatment to highly planarize the substrate surface and strong chemical treatment to regenerate the substrate after the debonding process are required.

[0007] The present invention aims to provide a method for manufacturing a semiconductor device that uses a temporary fixing material, which allows for the omission of planarization treatment of a silicon carrier substrate even when a silicon carrier substrate is used as a support member, and also allows for easy separation of the semiconductor component from the support member and easy regeneration of the silicon carrier substrate, as well as a temporary fixing material for a silicon carrier substrate that can be used in this manufacturing method.

[0008] The present invention includes the following aspects: [1] A method for manufacturing a semiconductor device, comprising the steps of: preparing a laminate comprising a silicon carrier substrate and an organic temporary fixing material laminated on the silicon carrier substrate; temporarily fixing a semiconductor member to the silicon carrier substrate via the organic temporary fixing material; processing the semiconductor member temporarily fixed to the silicon carrier substrate; and separating the semiconductor member from the silicon carrier substrate by irradiating the organic temporary fixing material of the laminate with light including infrared light from the silicon carrier substrate side. [2] The method for manufacturing a semiconductor device according to [1], wherein the organic temporary fixing material has a carbon-containing resin layer containing a resin component and a carbon filler on the side in contact with the silicon carrier substrate. [3] The method for manufacturing a semiconductor device according to [2], wherein the organic temporary fixing material further comprises a carbon-free resin layer containing a resin component and substantially free of carbon filler. [4] The method for manufacturing a semiconductor device according to [2], wherein the organic temporary fixing material has a single-layer structure consisting of the carbon-containing resin layer. [5] The method for manufacturing a semiconductor device according to [1], wherein the organic temporary fixing material has a single-layer structure consisting of a carbon-free resin layer that contains a resin component and substantially does not contain carbon filler. [6] The light source is CO ２A method for manufacturing a semiconductor device according to any one of [1] to [5], wherein the device is a gas laser. [7] A temporary fixing material for a silicon carrier substrate, which is used by being attached to a silicon carrier substrate and contains a resin component. [8] The temporary fixing material for a silicon carrier substrate according to [7], further containing a carbon filler. [9] The temporary fixing material for a silicon carrier substrate according to [8], having a multilayer structure comprising a carbon-containing resin layer containing a resin component and a carbon filler, and a carbon-free resin layer containing a resin component and substantially free of carbon filler.

[10] The temporary fixing material for a silicon carrier substrate according to [8], having a single-layer structure comprising a carbon-containing resin layer containing a resin component and a carbon filler.

[11] The temporary fixing material for a silicon carrier substrate according to [7], having a single-layer structure comprising a carbon-free resin layer containing a resin component and substantially free of carbon filler.

[12] A temporary fixing material having a multilayer structure comprising a carbon-containing resin layer containing a resin component and a carbon filler, and a carbon-free resin layer containing a resin component and substantially free of carbon filler, wherein the carbon-containing resin layer is the outermost layer.

[13] A temporary fixing material having a single-layer structure consisting of a resin component and a carbon-containing resin layer containing carbon filler.

[0009] According to the present invention, in the manufacture of a semiconductor device using a temporary fixing material, even when a silicon carrier substrate is used as a support member, the planarization process of the substrate can be omitted, the semiconductor component can be easily separated from the support member, and the silicon carrier substrate can be easily regenerated. The present invention also provides a method for manufacturing a semiconductor device and a temporary fixing material for a silicon carrier substrate that can be used in this manufacturing method.

[0010] Furthermore, according to the present invention, the planarization process of the silicon carrier substrate can be omitted, thereby preventing stress generation during the planarization process and damage to the silicon carrier substrate due to fine foreign matter. In the regeneration of the silicon carrier substrate, residue can be wiped off with a general-purpose solvent such as IPA, or regeneration can be done without washing, thereby improving the recyclability of the silicon carrier substrate.

[0011] Figures 1(a) and 1(b) are schematic cross-sectional views showing one embodiment of a temporary fixing material for a silicon carrier substrate. Figures 2(a) and 2(b) are schematic cross-sectional views showing one embodiment of a semiconductor device manufacturing method. Figures 3(a) and 3(b) are schematic cross-sectional views showing one embodiment of a semiconductor device manufacturing method. Figures 4(a), 4(b), and 4(c) are schematic cross-sectional views showing one embodiment of a semiconductor device manufacturing method. Figures 5(a) and 5(b) are schematic cross-sectional views showing one embodiment of a semiconductor device manufacturing method.

[0012] Embodiments of the present invention will be described below with reference to the drawings as appropriate. However, the present invention is not limited to the following embodiments. In the following embodiments, the components (including steps, etc.) are not essential unless otherwise specified. The sizes of the components in each figure are conceptual, and the relative relationships of the sizes between components are not limited to those shown in each figure.

[0013] The same applies to numerical values ​​and their ranges in this specification, and they do not limit the present invention. Numerical ranges indicated using "~" in this specification indicate a range that includes the numerical values ​​before and after "~" as the minimum and maximum values, respectively. In numerical ranges described in steps in this specification, the upper or lower limit of one numerical range may be replaced with the upper or lower limit of another numerical range described in steps. Also, in numerical ranges described in this specification, the upper or lower limit of that numerical range may be replaced with the values ​​shown in the examples (manufacturing examples).

[0014] In this specification, the term "layer" includes not only structures that are formed across the entire surface when observed in a plan view, but also structures that are formed in only a part of the surface. Furthermore, in this specification, the term "process" includes not only independent processes, but also processes that cannot be clearly distinguished from other processes, as long as their intended function is achieved.

[0015] In this specification, (meth)acrylate means acrylate or the corresponding methacrylate. The same applies to other similar expressions such as (meth)acryloyl group and (meth)acrylic copolymer.

[0016] In this specification, unless otherwise specified, the materials exemplified below may be used individually or in combination of two or more, to the extent that the conditions are met. The content of each component refers to the total amount of multiple substances corresponding to each component, unless otherwise specified.

[0017] [Temporary Fixing Material for Silicon Carrier Substrates] The temporary fixing material for silicon carrier substrates of this embodiment is a temporary fixing material used by being attached to a silicon carrier substrate, and contains a resin component (hereinafter sometimes referred to as "component (A)"). The temporary fixing material for silicon carrier substrates of this embodiment is also an organic temporary fixing material.

[0018] Furthermore, the temporary fixing material for silicon carrier substrates of this embodiment can also be used as a temporary fixing material for applications other than those for silicon carrier substrates. In this case, in the following description, "temporary fixing material for silicon carrier substrates" can be read as "temporary fixing material".

[0019] In this specification, an organic temporary fixing material refers to a temporary fixing material that contains 30% by mass or more of an organic compound.

[0020] The temporary fixing material for the silicon carrier substrate may further contain carbon filler (hereinafter sometimes referred to as "component (B)").

[0021] The temporary fixing material for the silicon carrier substrate may have a single-layer structure or a multi-layer structure.

[0022] For example, the temporary fixing material for the silicon carrier substrate may have a single-layer structure consisting of a carbon-containing resin layer containing component (A) and component (B), or it may have a single-layer structure consisting of a carbon-free resin layer containing component (A) but substantially not containing component (B).

[0023] Furthermore, the temporary fixing material for the silicon carrier substrate may have a multilayer structure comprising a carbon-containing resin layer containing component (A) and component (B), and a carbon-free resin layer containing component (A) and substantially not containing component (B).

[0024] In this specification, "substantially free of component (B) (carbon filler)" means either that it does not contain carbon filler, or that it may contain carbon filler to the extent that it does not impair the effects achieved by the carbon-free resin layer described later (e.g., reduction of damage to the carrier).

[0025] A temporary fixing material for a silicon carrier substrate having a multilayer structure may be attached to the silicon carrier substrate from the carbon-containing resin layer side.

[0026] Furthermore, in the temporary fixing material for silicon carrier substrates having the multilayer structure described above, the carbon-containing resin layer may be the outermost layer. Here, the outermost layer refers to the layer that constitutes the outermost surface of the temporary fixing material. In this case, the temporary fixing material for silicon carrier substrates can be attached so that the carbon-containing resin layer is in contact with the silicon carrier substrate.

[0027] Furthermore, the temporary fixing material for silicon carrier substrates having a multilayer structure may include functional layers other than the carbon-containing resin layer and the carbon-free resin layer. Examples of functional layers include anti-reflective sheets, heat dissipation sheets, and highly heat-resistant flat sheets such as polyimide.

[0028] The temporary fixing material for the silicon carrier substrate may further have a film (sheet) laminated on it to support or protect the temporary fixing material. Examples of films include polyethylene terephthalate (PET) film, polyethylene (PE) film, polypropylene (PP) film, polycarbonate (PC) film, polyetheretherketone (PEEK) film, and polyimide (PI) film (e.g., UPILEX manufactured by UBE Corporation, Kapton manufactured by Toray DuPont Co., Ltd.).

[0029] FIG. 1 is a schematic cross-sectional view showing an embodiment of a temporary fixing material for a silicon carrier substrate. The temporary fixing material 1 for a silicon carrier substrate shown in (a) of FIG. 1 has a single-layer structure composed of a carbon-containing resin layer 10 containing components (A) and (B). The temporary fixing material 2 for a silicon carrier substrate shown in (b) of FIG. 1 has a multilayer structure including a carbon-containing resin layer 11 containing components (A) and (B) and a carbon-free resin layer 12 containing component (A) and substantially not containing component (B).

[0030] Component (A): Resin component. Component (A) may be a component that cures by heat or light, that is, a curable resin component. From the viewpoint of adhesiveness, component (A) can include a thermoplastic resin (hereinafter sometimes referred to as “component (A-1)”) and a thermosetting component (hereinafter sometimes referred to as “component (A-2)”).

[0031] <Component (A-1)> The thermoplastic resin is a resin having thermoplasticity or a resin having thermoplasticity at least in the uncured state and forming a crosslinked structure after heating.

[0032] Examples of the thermoplastic resin include acrylic rubber, hydrocarbon resin, polyamideimide resin, and bismaleimide resin.

[0033] The acrylic rubber may mainly contain a structural unit derived from a (meth)acrylate ester. Examples of the (meth)acrylate ester include methyl (meth)acrylate, ethyl (meth)acrylate, propyl (meth)acrylate, and butyl (meth)acrylate. The content of the structural unit derived from the (meth)acrylate ester may be, for example, 40% by mass or more, 60% by mass or more, or 80% by mass or more based on the total amount of the structural units constituting the acrylic rubber.

[0034] Acrylic rubber may contain, as a structural unit derived from a (meth)acrylate ester, a structural unit derived from a (meth)acrylate ester having a crosslinkable functional group such as an epoxy group (glycidyl group), an alcoholic or phenolic hydroxyl group, or a carboxyl group. The crosslinkable functional group may be, for example, a hydroxyalkyl group or an epoxy group (glycidyl group). Examples of the (meth)acrylate ester having a crosslinkable functional group include 2-hydroxyethyl (meth)acrylate, glycidyl (meth)acrylate, 4-hydroxybutyl (meth)acrylate glycidyl ether, 3,4-epoxycyclohexylmethyl (meth)acrylate, and the like. Among these, the (meth)acrylate ester having a crosslinkable functional group may be glycidyl (meth)acrylate.

[0035] The content of the structural unit derived from a (meth)acrylate ester having a crosslinkable functional group (particularly, an epoxy group (glycidyl group)) may be 1% by mass or more, 5% by mass or more, or 10% by mass or more, from the viewpoint of maintaining high heat resistance by crosslinking of the matrix, based on the total amount of the structural units constituting the acrylic rubber, and may be 30% by mass or less, 10% by mass or less, or 1% by mass or less, from the viewpoint of storage stability (suppression of gelation).

[0036] In addition to the structural unit derived from a (meth)acrylate ester, acrylic rubber may further contain a structural unit derived from styrene.

[0037] Hydrocarbon resins are resins whose main skeleton is composed of hydrocarbons. Examples of such hydrocarbon resins include ethylene-propylene copolymer, ethylene-1-butene copolymer, ethylene-propylene-1-butene copolymer elastomer, ethylene-1-hexene copolymer, ethylene-1-octene copolymer, ethylene-styrene copolymer, ethylene-norbornene copolymer, propylene-1-butene copolymer, ethylene-propylene-unconjugated diene copolymer, ethylene-1-butene-unconjugated diene copolymer, ethylene-propylene-1-butene-unconjugated diene copolymer, polyisoprene, polybutadiene, styrene-butadiene-styrene block copolymer (SBS), styrene-isoprene-styrene block copolymer (SIS), styrene-ethylene-butylene-styrene block copolymer (SEBS), and styrene-ethylene-propylene-styrene block copolymer (SEPS). These hydrocarbon resins may be subjected to hydrogenation treatment. Furthermore, these hydrocarbon resins may be carboxylated with maleic anhydride or the like. Of these, the hydrocarbon resin may include a hydrocarbon resin (styrene-based resin) containing monomer units derived from styrene, or it may include styrene-ethylene-butylene-styrene block copolymer (SEBS).

[0038] Commercially available polyamide-imide resins such as HPC-9000, HPC-5020 (manufactured by Resonaq Corporation), TI-5013, TI-530-AE3 (manufactured by Toray Industries, Inc.), and Duratron T4203 (manufactured by Mitsubishi Chemical Corporation) can be used.

[0039] Bismaleimide resins such as MIR-3000-70MT, MIZ-001 (manufactured by Nippon Kayaku Co., Ltd.), UMI-0 (manufactured by Unitika Ltd.), X9-470 (manufactured by DIC Corporation), JBM-200N, JBM-300N, and JBM-800N (manufactured by JFE Chemical Corporation) can be used as commercially available products.

[0040] Thermoplastic resins are sensitive to infrared light (especially CO2). ２ From the viewpoint of responsiveness to gas laser light, it may have an aromatic ring, a carbonyl group, or a carbonyloxy group.

[0041] Thermoplastic resins with an energy transmittance of 40% or less, or 20% or less, as measured by the following method, may be used. [Method for measuring energy transmittance] (i) Prepare a sample for measurement by providing a layer of thermoplastic resin with a thickness of 30 μm on a silicon substrate with a thickness of 725 μm. (ii) From the silicon substrate side of the sample for measurement, apply CO2 with wavelengths of 9.6 μm and 10.6 μm. ２ A gas laser beam is irradiated at 15 mJ under the following conditions: Focused spot diameter: 500 μm Irradiation waveform: Gaussian, pulsed wave (iii) The energy Et (mJ) transmitted through the sample for measurement is measured by a laser power measurement mechanism, and the energy transmittance is calculated from the following formula: Energy transmittance (%) = Et × 100 / 15

[0042] Thermoplastic resins may have aliphatic hydrocarbon groups with 2 to 300, 10 to 250, or 30 to 200 carbon atoms, from the viewpoint of adhesion. An aliphatic hydrocarbon group refers to a linear, branched, or cyclic saturated or unsaturated hydrocarbon.

[0043] The Tg of the thermoplastic resin may be -100 to 500°C, -50 to 300°C, or -50 to 50°C. When the Tg of the thermoplastic resin is 500°C or lower, it tends to be easier to ensure flexibility when forming a film-like temporary fixing material, and low-temperature adhesion can be improved. When the Tg of the thermoplastic resin is -100°C or higher, it tends to suppress the decrease in handling and peelability due to excessive flexibility when forming a film-like temporary fixing material.

[0044] The Tg of a thermoplastic resin is the intermediate glass transition temperature value obtained by differential scanning calorimetry (DSC). Specifically, the Tg of a thermoplastic resin is the intermediate glass transition temperature calculated by measuring the change in heat quantity under conditions of a heating rate of 10°C / min and a measurement temperature of -80 to 80°C, using a method compliant with JIS K 7121.

[0045] The weight-average molecular weight (Mw) of the thermoplastic resin may be between 10,000 and 5 million or between 100,000 and 2 million. A weight-average molecular weight of 10,000 or more tends to facilitate ensuring the heat resistance of the formed temporary fixing layer. A weight-average molecular weight of 5 million or less tends to suppress the reduction in flow and adhesion when a film-like temporary fixing layer or resin layer is formed. Note that the weight-average molecular weight is a polystyrene equivalent value obtained using a calibration curve with standard polystyrene by gel permeation chromatography (GPC).

[0046] The content of component (A-1) in the carbon-free resin layer or the carbon-containing resin layer may be 10 to 100 parts by mass, 20 to 80 parts by mass, or 30 to 60 parts by mass per 100 parts by mass of the total amount of component (A), from the viewpoint of achieving both a flat film quality (flatness: TTV) and lamination properties and high heat resistance.

[0047] <(A-2) Component> Examples of thermosetting components include thermosetting resins. Thermosetting resins refer to resins that harden with heat and are a concept that does not include the plastic resins mentioned above. Examples of thermosetting resins include epoxy resins, acrylic resins, silicone resins, phenolic resins, thermosetting polyimide resins, polyurethane resins, melamine resins, and urea resins. Of these, epoxy resins may be used as thermosetting resins because they offer superior heat resistance, workability, and reliability.

[0048] The epoxy resin is not particularly limited as long as it has heat resistance after curing. Examples of epoxy resins include difunctional epoxy resins such as bisphenol A type epoxy resin, novolac type epoxy resins such as phenol novolac type epoxy resin and cresol novolac type epoxy resin, and alicyclic epoxy resins such as dicyclopentadiene type epoxy resin. The epoxy resin may also be, for example, a polyfunctional epoxy resin, a glycidylamine type epoxy resin, or a heterocyclic epoxy resin. Among these, the epoxy resin may include alicyclic epoxy resins from the viewpoint of heat resistance and weather resistance.

[0049] Epoxy resins, as thermosetting resins, may be used alone or in combination with an epoxy resin curing agent. Examples of epoxy resin curing agents include amines, polyamides, acid anhydrides, polysulfides, boron trifluoride, bisphenols (bisphenol A, bisphenol F, bisphenol S, etc.), and phenol resins (phenol novolac resins, bisphenol A novolac resins, cresol novolac resins, phenol aralkyl resins, etc.).

[0050] The content of component (A-2) (the total of epoxy resin and epoxy resin curing agent when epoxy resin and epoxy resin curing agent are used in combination) in the carbon-free resin layer or the carbon-containing resin layer may be 0 to 90 parts by mass, or 20 to 40 parts by mass, per 100 parts by mass of the total amount of component (A), from the viewpoint of achieving both flatness (TTV) and bonding properties and high heat resistance.

[0051] Component (A-2) may further contain a curing accelerator that promotes the curing reaction of thermosetting resins such as epoxy resins. Examples of curing accelerators include imidazole derivatives, dicyandiamide derivatives, dicarboxylic acid dihydrazides, triphenylphosphine, tetraphenylphosphonium tetraphenylborate, 2-ethyl-4-methylimidazole-tetraphenylborate, and 1,8-diazabicyclo[5,4,0]undecene-7-tetraphenylborate.

[0052] The content of the curing accelerator in the carbon-free resin layer or the carbon-containing resin layer may be 0.01 to 5 parts by mass per 100 parts by mass of the total amount of the thermosetting resin and the curing agent for the thermosetting resin. When the content of the curing accelerator is within this range, the curability of component (A-2) and the heat resistance after curing tend to be better. The content of the curing accelerator may be 0.1 parts by mass or more, or 0.3 parts by mass or more, or 3 parts by mass or less, or 1 part by mass or less, per 100 parts by mass of the total amount of the thermosetting resin and the curing agent for the thermosetting resin, as it is easy to adjust the storage modulus.

[0053] Component (A) may further contain a polymerizable monomer and a polymerization initiator. The polymerizable monomer is not particularly limited as long as it polymerizes by heating or irradiation with ultraviolet light or the like. From the viewpoint of material selectivity and availability, the polymerizable monomer may be a compound having a polymerizable functional group such as an ethylenically unsaturated group. Examples of polymerizable monomers include (meth)acrylate, vinylidene halide, vinyl ether, vinyl ester, vinylpyridine, vinylamide, aryl vinyl, styrene, maleimide monomer, etc. Of these, the polymerizable monomer may be (meth)acrylate. The (meth)acrylate may be monofunctional, difunctional, or trifunctional or more, but from the viewpoint of obtaining sufficient curability, it may be a (meth)acrylate with two or more functions.

[0054] Examples of monofunctional (meth)acrylates include (meth)acrylic acid; methyl (meth)acrylate, ethyl (meth)acrylate, butyl (meth)acrylate, isobutyl (meth)acrylate, tert-butyl (meth)acrylate, butoxyethyl (meth)acrylate, isoamyl (meth)acrylate, hexyl (meth)acrylate, 2-ethylhexyl (meth)acrylate, heptyl (meth)acrylate, octylheptyl (meth)acrylate, nonyl (meth)acrylate, and decyl (meth)acrylate. (meth)acrylate 2-hydroxyethyl (meth)acrylate, 2-hydroxypropyl (meth)acrylate, 3-chloro-2-hydroxypropyl (meth)acrylate, 2-hydroxybutyl (meth)acrylate, methoxypolyethylene glycol (meth)acrylate, ethoxypolyethylene glycol (meth)acrylate, methoxypolypropylene glycol (meth)acrylate, ethoxypolypropylene glycol (meth)acrylate, mono(2-(meth)acryloyloxyethyl) Aliphatic (meth)acrylates such as succinate; benzyl (meth)acrylate, phenyl (meth)acrylate, o-biphenyl (meth)acrylate, 1-naphthyl (meth)acrylate, 2-naphthyl (meth)acrylate, phenoxyethyl (meth)acrylate, p-cumylphenoxyethyl (meth)acrylate, o-phenylphenoxyethyl (meth)acrylate, 1-naphthoxyethyl (meth)acrylate, 2-naphthoxyethyl (meth)acrylate, phenoxypolyethylene glyco Examples include aromatic (meth)acrylates such as methyl(meth)acrylate, nonylphenoxypolyethylene glycol (meth)acrylate, phenoxypolypropylene glycol (meth)acrylate, 2-hydroxy-3-phenoxypropyl (meth)acrylate, 2-hydroxy-3-(o-phenylphenoxy)propyl (meth)acrylate, 2-hydroxy-3-(1-naphthoxy)propyl (meth)acrylate, and 2-hydroxy-3-(2-naphthoxy)propyl (meth)acrylate.

[0055] Examples of difunctional (meth)acrylates include ethylene glycol di(meth)acrylate, diethylene glycol di(meth)acrylate, triethylene glycol di(meth)acrylate, tetraethylene glycol di(meth)acrylate, polyethylene glycol di(meth)acrylate, propylene glycol di(meth)acrylate, dipropylene glycol di(meth)acrylate, tripropylene glycol di(meth)acrylate, tetrapropylene glycol di(meth)acrylate, polypropylene glycol di(meth)acrylate, ethoxylated polypropylene glycol di(meth)acrylate, 1,3-butanediol di(meth)acrylate, 1,4-butanediol di(meth)acrylate, neopentyl glycol di(meth)acrylate, 3-methyl-1,5-pentanediol di(meth)acrylate, 1,6-hexanediol di(meth)acrylate, and 2-butyl-2-ethyl-1,3-propanediol Aliphatic (meth)acrylates such as 1,9-nonanediol di(meth)acrylate, 1,10-decanediol di(meth)acrylate, glycerin di(meth)acrylate, tricyclodecanedimethanol (meth)acrylate, ethoxylated 2-methyl-1,3-propanediol di(meth)acrylate; ethoxylated bisphenol A type di(meth)acrylate, propoxylated bisphenol A type di(meth)acrylate, ethoxy Examples include aromatic (meth)acrylates such as cylated propoxylated bisphenol A type di(meth)acrylate, ethoxylated bisphenol F type di(meth)acrylate, propoxylated bisphenol F type di(meth)acrylate, ethoxylated propoxylated bisphenol F type di(meth)acrylate, ethoxylated fluorene type di(meth)acrylate, propoxylated fluorene type di(meth)acrylate, and ethoxylated propoxylated fluorene type di(meth)acrylate.

[0056] Examples of polyfunctional (meth)acrylates with three or more functions include trimethylolpropane tri(meth)acrylate, ethoxylated trimethylolpropane tri(meth)acrylate, propoxylated trimethylolpropane tri(meth)acrylate, ethoxylated propoxylated trimethylolpropane tri(meth)acrylate, pentaerythritol tri(meth)acrylate, ethoxylated pentaerythritol tri(meth)acrylate, propoxylated pentaerythritol tri(meth)acrylate, and ethoxylated propoxylated pentaerythritol tri(meth)acrylate. Examples include aliphatic (meth)acrylates such as pentaerythritol tetra(meth)acrylate, ethoxylated pentaerythritol tetra(meth)acrylate, propoxylated pentaerythritol tetra(meth)acrylate, ethoxylated propoxylated pentaerythritol tetra(meth)acrylate, ditrimethylolpropane tetraacrylate, and dipentaerythritol hexa(meth)acrylate; and aromatic epoxy (meth)acrylates such as phenol novolac type epoxy (meth)acrylate and cresol novolac type epoxy (meth)acrylate. These (meth)acrylates may also be used in combination with other polymerizable monomers.

[0057] The amount of polymerizable monomer in the carbon-free resin layer or the carbon-containing resin layer may be 0 to 50 parts by mass per 100 parts by mass of the total amount of component (A).

[0058] The polymerization initiator is not particularly limited as long as it initiates polymerization by heating or irradiation with ultraviolet light or the like. For example, when a compound having an ethylenically unsaturated group is used as the polymerizable monomer, the polymerization initiator may be a thermal radical polymerization initiator or a photoradical polymerization initiator.

[0059] Examples of thermal radical polymerization initiators include diacyl peroxides such as octanoyl peroxide, lauroyl peroxide, stearyl peroxide, and benzoyl peroxide; t-butyl peroxypivalate, t-hexyl peroxypivalate, 1,1,3,3-tetramethylbutyl peroxy-2-ethylhexanoate, 2,5-dimethyl-2,5-bis(2-ethylhexanoylperoxy)hexane, t-hexyl peroxy-2-ethylhexanoate, t-butyl peroxy-2-ethylhexanoate, t-butyl peroxyisobutyrate, t-hexyl peroxyisopropyl monocarbonate, and t-butyl peroxyisopropyl monocarbonate. Examples include peroxyesters such as peroxy-3,5,5-trimethylhexanoate, t-butyl peroxylaurylate, t-butyl peroxyisopropyl monocarbonate, t-butyl peroxy-2-ethylhexyl monocarbonate, t-butyl peroxybenzoate, t-hexyl peroxybenzoate, 2,5-dimethyl-2,5-bis(benzoylperoxy)hexane, and t-butyl peroxyacetate; and azo compounds such as 2,2'-azobisisobutyronitrile, 2,2'-azobis(2,4-dimethylvaleronitrile), and 2,2'-azobis(4-methoxy-2'-dimethylvaleronitrile).

[0060] Examples of photoradical polymerization initiators include benzoin ketals such as 2,2-dimethoxy-1,2-diphenylethane-1-one; α-hydroxyketones such as 1-hydroxycyclohexylphenyl ketone, 2-hydroxy-2-methyl-1-phenylpropan-1-one, and 1-[4-(2-hydroxyethoxy)phenyl]-2-hydroxy-2-methyl-1-propan-1-one; and phosphine oxides such as bis(2,4,6-trimethylbenzoyl)phenylphosphine oxide, bis(2,6-dimethoxybenzoyl)-2,4,4-trimethylpentylphosphine oxide, and 2,4,6-trimethylbenzoyldiphenylphosphine oxide.

[0061] The amount of polymerization initiator in the carbon-free resin layer or the carbon-containing resin layer may be 0.01 to 5 parts by mass per 100 parts by mass of the total amount of polymerizable monomers.

[0062] When the temporary fixing material for silicon carrier substrates has a multilayer structure including a carbon-containing resin layer and a carbon-free resin layer, the respective (A) components in the carbon-containing resin layer and the carbon-free resin layer may have the same composition or different compositions.

[0063] The content of component (A) in the carbon-free resin layer or the carbon-containing resin layer may be 70% by mass or more, 80% by mass or more, 85% by mass or more, 90% by mass or more, or 95% by mass or more, based on the total amount of the resin layer.

[0064] Furthermore, component (A) may be the main component of the temporary fixing material for silicon carrier substrates. The content of component (A) may be 70% by mass or more, 80% by mass or more, 85% by mass or more, 90% by mass or more, or 95% by mass or more, based on the total amount of the temporary fixing material for silicon carrier substrates.

[0065] (B) Component: Carbon filler Examples of (B) component include carbon black such as acetylene black, Ketjen black, thermal black, channel black, and furnace black. Since (B) component readily absorbs light and generates heat, it may be a conductive carbon black, for example, acetylene black.

[0066] The average primary particle size of component (B) may be, for example, 10 to 100 nm. When the average primary particle size of component (B) is 10 nm or more, the dispersibility of component (B) in component (A) tends to be good. When the average primary particle size of component (B) is 100 nm or less, the flatness of the temporary fixing material for silicon carrier substrates tends to be good, and the adhesion between the silicon carrier substrate and the semiconductor component tends to be improved. The average primary particle size of component (B) may be 20 nm or more or 30 nm or more, or 80 nm or less or 60 nm or less. The average primary particle size of component (B) can be determined by measuring the major axis of 50 primary particles from an electron microscope image and measuring their arithmetic mean.

[0067] The content of component (B) in the carbon-containing resin layer may be 0.01 to 50 parts by mass, 0.1 to 20 parts by mass, or 1 to 10 parts by mass per 100 parts by mass of the total amount of component (A), from the viewpoint of obtaining sufficient heat generation while suppressing aggregation.

[0068] If the temporary fixing material for silicon carrier substrates has a multilayer structure including a carbon-containing resin layer and a carbon-free resin layer, the content of component (B) may be 0.01 to 50% by mass, 0.1 to 20% by mass, or 1 to 10% by mass, based on the total amount of the temporary fixing material for silicon carrier substrates.

[0069] The carbon-free resin layer or the carbon-containing resin layer may further contain other components such as insulating fillers, sensitizers, and antioxidants.

[0070] Insulating fillers may be added to the resin layer to impart low thermal expansion and low hygroscopicity. Examples of insulating fillers include non-metallic inorganic fillers such as silica, alumina, boron nitride, titania, glass, and ceramics. From the viewpoint of dispersibility with solvents, the insulating fillers may be particles whose surfaces are treated with a surface treatment agent. The surface treatment agent may be, for example, a silane coupling agent.

[0071] The content of insulating filler in the carbon-free resin layer or the carbon-containing resin layer may be 0.1 to 20 parts by mass per 100 parts by mass of the total amount of component (A).

[0072] Examples of sensitizers include anthracene, phenanthrene, chrysene, benzopyrene, fluorantene, rubrene, pyrene, xanthon, indanthrene, thioxanthene-9-one, 2-isopropyl-9H-thioxanthene-9-one, 4-isopropyl-9H-thioxanthene-9-one, and 1-chloro-4-propoxythioxanthone.

[0073] The amount of sensitizer in the carbon-free resin layer or the carbon-containing resin layer may be 0.01 to 10 parts by mass per 100 parts by mass of the total amount of component (A).

[0074] Examples of antioxidants include quinone derivatives such as benzoquinone and hydroquinone, phenol derivatives (hindered phenol derivatives) such as 4-methoxyphenol and 4-t-butylcatechol, aminooxyl derivatives such as 2,2,6,6-tetramethylpiperidine-1-oxyl and 4-hydroxy-2,2,6,6-tetramethylpiperidine-1-oxyl, and hindered amine derivatives such as tetramethylpiperidyl methacrylate.

[0075] The amount of antioxidant in the carbon-free resin layer or the carbon-containing resin layer may be 0.1 to 10 parts by mass per 100 parts by mass of the total amount of component (A).

[0076] The temporary fixing material for the silicon carrier substrate may be in the form of a film, and its total thickness may be, for example, 0.1 μm or more, 1 μm or more, 5 μm or more, more than 5 μm, 6 μm or more, 8 μm or more, or 10 μm or more, and may be 200 μm or less, 100 μm or less, or 50 μm or less. If the temporary fixing material for the silicon carrier substrate has a single-layer structure, the thickness of the carbon-free resin layer or the carbon-containing resin layer may be within the above range.

[0077] When a temporary fixing material for a silicon carrier substrate has a multilayer structure including a carbon-containing resin layer and a carbon-free resin layer, the thickness T of the carbon-containing resin layer Ｃ And the thickness T of the carbon-free resin layer ｎｃ The ratio of [T Ｃ / T ＮＣ ] may be between 0.001 / 1 and 2 / 1, between 0.01 / 1 and 1 / 1, and between 0.05 / 1 and 0.5 / 1.

[0078] The temporary fixing material for the silicon carrier substrate may have an energy transmittance of 15% or less, 10% or less, 5% or less, 1% or less, or 0.1% or less, as measured by the following method.

[0079] [Method for measuring energy transmittance - 1] (i) A temporary fixing material for silicon carrier substrates is attached to a silicon substrate with a thickness of 725 μm, and the temporary fixing material is cured by heating at 180°C for 30 minutes to prepare a sample for measurement. (ii) CO2 with a wavelength of 10.6 μm is applied from the silicon substrate side of the sample for measurement.２ Irradiate the gas laser light with Et ０ (mJ) under the following conditions. Condensing spot diameter: 500 μm Irradiation waveform: Gaussian, nanosecond pulse wave, RF excitation (iii) Measure the energy Et (mJ) transmitted through the measurement sample with a laser power measurement mechanism, and calculate the energy transmittance from the following formula. Energy transmittance (%) = Et × 100 / Et ０

[0080] [Measurement method of energy transmittance - 2] (i) After attaching a temporary fixing material for a silicon carrier substrate on a silicon substrate with a thickness of 725 μm, heat the temporary fixing material under the condition of heating at 180°C for 30 minutes to cure it, and produce a measurement sample. (ii) From the silicon substrate side of the measurement sample, irradiate the fiber laser light with a wavelength of 1908 nm with Et ０ (mJ) under the following conditions. Condensing spot diameter: 100 μm Irradiation waveform: Gaussian, pulse wave, or continuous wave (iii) Measure the energy Et (mJ) transmitted through the measurement sample with a laser power measurement mechanism, and calculate the energy transmittance from the following formula. Energy transmittance (%) = Et × 100 / Et ０

[0081] [Manufacturing method of temporary fixing material for silicon carrier substrate] The temporary fixing material for a silicon carrier substrate is, for example, first, the component (A), and, if necessary, the component (B) and other components are stirred and mixed, kneaded, etc. in a solvent to dissolve or disperse them, and a varnish of a carbon-containing resin composition or a carbon-free resin composition is prepared. Then, after applying the varnish of the carbon-containing resin composition or the carbon-free resin composition on a support film subjected to a release treatment using a knife coater, a roll coater, an applicator, a comma coater, a die coater, etc., the solvent is volatilized by heating, whereby a carbon-containing resin layer or a carbon-free resin layer composed of the carbon-containing resin composition or the carbon-free resin composition can be formed on the support film. These thicknesses can be adjusted by adjusting the coating amount of the varnish of the resin composition.

[0082] When manufacturing a temporary fixing material for a silicon carrier substrate having a multilayer structure including a carbon-containing resin layer and a carbon-free resin layer, a first laminated film in which a carbon-containing resin layer is formed on a support film and a second laminated film in which a carbon-free resin layer is formed on a support film may be prepared in the same manner as described above, and these may be bonded together so that the carbon-containing resin layer and the carbon-free resin layer are in close contact. Examples of methods for bonding the laminated films include heat pressing, roll lamination, and vacuum lamination. Lamination may be carried out, for example, under temperature conditions of 30 to 120°C.

[0083] The temporary fixing material for the silicon carrier substrate may include a protective film laminated on the side opposite to the support film. If the temporary fixing material for the silicon carrier substrate has a multilayer structure including a carbon-containing resin layer and a carbon-free resin layer, a first laminated film may be prepared by forming a carbon-containing resin layer on the protective film and bonding it to the second laminated film. In this case, the temporary fixing material for the silicon carrier substrate may be suitable for use by attaching it to the silicon carrier substrate from the carbon-containing resin layer side.

[0084] The solvent used in the preparation of the varnish of the above resin composition is not particularly limited as long as it has the property of uniformly dissolving or dispersing each component. Examples of such solvents include aromatic hydrocarbons such as toluene, xylene, mesitylene, cumene, and p-cymene; aliphatic hydrocarbons such as hexane and heptane; cyclic alkanes such as methylcyclohexane; cyclic ethers such as tetrahydrofuran and 1,4-dioxane; ketones such as acetone, methyl ethyl ketone, methyl isobutyl ketone, cyclohexanone, and 4-hydroxy-4-methyl-2-pentanone; esters such as methyl acetate, ethyl acetate, butyl acetate, methyl lactate, ethyl lactate, and γ-butyrolactone; carbonate esters such as ethylene carbonate and propylene carbonate; and amides such as N,N-dimethylformamide, N,N-dimethylacetamide, and N-methyl-2-pyrrolidone. Of these, the solvent may be toluene, xylene, heptane, or cyclohexanone from the viewpoint of solubility and boiling point. The concentration of solid components in the varnish may be 10 to 80% by mass, based on the total mass of the varnish.

[0085] The stirring, mixing, or kneading of the resin composition varnish can be carried out using, for example, a stirrer, a sloshing machine, a three-roll mill, a ball mill, a bead mill, a homodisper, or the like.

[0086] Examples of support films include polyesters such as polyethylene terephthalate (PET), polybutylene terephthalate, and polyethylene naphthalate; polyolefins such as polyethylene and polypropylene; and films of polycarbonate, polyamide, polyimide, polyamide-imide, polyetherimide, polyether sulfide, polyethersulfone, polyetherketone, polyphenylene ether, polyphenylene sulfide, poly(meth)acrylate, polysulfone, and liquid crystal polymer. These support films may be treated with a release agent. The thickness of the support film may be, for example, 1 to 250 μm.

[0087] The heating conditions for volatilizing the solvent from the varnish of the resin composition coated onto the support film can be appropriately set according to the solvent used. For example, the heating conditions may be a heating temperature of 40 to 120°C for a heating time of 0.1 to 30 minutes.

[0088] Examples of protective films include those exemplified in the support film described above. The thickness of the protective film may be, for example, 1 to 250 μm.

[0089] [Method for Manufacturing a Semiconductor Device] The method for manufacturing a semiconductor device according to this embodiment comprises: a step of preparing a laminate comprising a silicon carrier substrate and an organic temporary fixing material laminated on the silicon carrier substrate (preparation step); a step of temporarily fixing a semiconductor member to the silicon carrier substrate via the organic temporary fixing material (temporary fixing step); a step of processing the semiconductor member temporarily fixed to the silicon carrier substrate (processing step); and a step of separating the semiconductor member from the silicon carrier substrate by irradiating the organic temporary fixing material of the laminate with light including infrared light from the silicon carrier substrate side (separation step). In the following, an embodiment using the temporary fixing material shown in Figure 1(a) or (b) will be described in detail as an example.

[0090] (Preparation Process) In the preparation process, the above-mentioned temporary fixing materials 1 and 2 are prepared as organic temporary fixing materials for temporarily fixing semiconductor components to a silicon carrier substrate, which is a support member, while the semiconductor components are being processed in order to manufacture a semiconductor device.

[0091] The manufacturing method for the laminates 20 and 70 is not particularly limited as long as a laminate having a predetermined configuration can be obtained. The laminates 20 and 70 can each be obtained, for example, by a method that includes the step of attaching the above-mentioned temporary fixing materials 1 and 2 onto the silicon carrier substrate 22 (see Figures 2(a) and (b)). Alternatively, the laminates 20 and 70 can also be obtained by a method that includes the step of coating the silicon carrier substrate 22 with a varnish of a resin composition and volatilizing the solvent by heating to form a carbon-containing resin layer and / or a carbon-free resin layer on the silicon carrier substrate 22.

[0092] The thickness of the silicon carrier substrate 22 may be, for example, 0.1 to 2.0 mm. If the thickness of the support member 22 is 0.1 mm or more, handling tends to be easier. If the thickness of the silicon carrier substrate 22 is 2.0 mm or less, material costs tend to be reduced.

[0093] The silicon carrier substrate 22 may not be planarized. The silicon carrier substrate 22 may have a thickness variation of 25 μm or more, 10 μm or more, or 5 μm or more.

[0094] Methods for attaching the temporary fixing materials 1 and 2 onto the silicon carrier substrate 22 include, for example, heat pressing, roll lamination, and vacuum lamination. Lamination can be performed, for example, under temperature conditions of 0 to 120°C.

[0095] The laminate 20 shown in Figure 2(a) has a structure in which a temporary fixing material 1A consisting only of a carbon-containing resin layer 10 is laminated on a silicon carrier substrate 22, but a carbon-free resin layer may be laminated instead of the carbon-containing resin layer 10.

[0096] The laminate 70 shown in Figure 2(b) has a structure in which a temporary fixing material 2A containing a carbon-containing resin layer 11 and a carbon-free resin layer 12 is laminated on a silicon carrier substrate 22, with the carbon-containing resin layer 11 in contact with the silicon carrier substrate 22. In this case, there are advantages such as the ability to protect the semiconductor component with the carbon-free resin layer 12, the ease of separation from the silicon carrier substrate 22, and the ease of removing the carbon-free resin layer 12 from the semiconductor component.

[0097] When a temporary fixing material containing a carbon-free resin layer and a carbon-containing resin layer is laminated on a silicon carrier substrate, the carbon-free resin layer may be positioned in contact with the silicon carrier substrate. In this case, the carbon-free resin layer reduces damage to the carrier, improving the recyclability of the carrier, and the reduced residue on the carrier makes it easier to peel the temporary fixing material off the carrier, which is advantageous.

[0098] When a temporary fixing material comprising a carbon-free resin layer, a carbon-containing resin layer, and a carbon-free resin layer in that order is laminated on a silicon carrier substrate, the carbon-free resin layers may be arranged so that they are in contact with the silicon carrier substrate and the semiconductor component. In this case, the carbon-free resin layers reduce damage to the carrier, improving the recyclability of the carrier, and the reduced residue on the carrier makes it easier to peel the temporary fixing material from the carrier. Furthermore, the carbon-free resin layers protect the semiconductor component, facilitate separation from the silicon carrier substrate, facilitate removal of the carbon-free resin layers from the semiconductor component, and improve peelability due to their heat-insulating effect.

[0099] (Temporary Fixing Process) Figures 3(a) and 3(b) are schematic cross-sectional views showing one embodiment of a semiconductor device manufacturing method. In the temporary fixing process, the semiconductor member 40 is temporarily fixed to the silicon carrier substrate 22 via temporary fixing materials 1A and 2A. The temporary fixing materials 1A and 2A each have surfaces S1 and S2 opposite to the silicon carrier substrate 22. In the temporary fixing process, for example, the semiconductor member 40 can be temporarily fixed to the silicon carrier substrate 22 by curing the temporary fixing materials 1A and 2A with the semiconductor member 40 placed on them (see Figures 3(a) and 3(b)).

[0100] The semiconductor member 40 may be a member having a semiconductor substrate 42, such as a semiconductor wafer or a semiconductor chip obtained by dividing a semiconductor wafer. The semiconductor member 40 may be, for example, a semiconductor chip with a redistribution layer having a redistribution layer 44 and a semiconductor substrate 42. When the semiconductor member 40 is a semiconductor chip with a redistribution layer, the semiconductor chip with a redistribution layer is temporarily fixed to the support member 22 via the temporary fixing materials 1A and 2A, with the redistribution layer facing the temporary fixing materials 1A and 2A. The semiconductor member 40 may further have external connection terminals. In the examples of Figures 3(a) and 3(b), a plurality of semiconductor members 40 are arranged on the surfaces S1 and S2 of the temporary fixing material layers 1A and 2A, but the number of semiconductor members 40 may be one. The thickness of the semiconductor member 40 may be 1 to 1000 μm, 10 to 500 μm, or 20 to 200 μm, in order to miniaturize and thin the semiconductor device, as well as to suppress cracking during transport, processing, etc.

[0101] The semiconductor members 40 placed on the temporary fixing materials 1A and 2A are pressed against the temporary fixing materials 1A and 2A using, for example, a vacuum press or a vacuum laminator. When using a vacuum press, the pressing conditions may be an atmospheric pressure of 1 hPa or less, a pressing pressure of 1 MPa, a pressing temperature of 120 to 200°C, and a holding time of 100 to 300 seconds. When using a vacuum laminator, the pressing conditions may be, for example, an atmospheric pressure of 1 hPa or less, a pressing temperature of 60 to 180°C or 80 to 150°C, a laminating pressure of 0.01 to 1.0 MPa or 0.1 to 0.7 MPa, and a holding time of 1 to 600 seconds or 30 to 300 seconds.

[0102] After the semiconductor member 40 is placed on the temporary fixing material layers 1A and 2A, the semiconductor member 40 is temporarily fixed to the support member 22 via the cured product of the temporary fixing material (e.g., thermoset product) by curing the curable component (e.g., component (A-2)) in the temporary fixing material layers 1A and 2A. The conditions for thermosetting may be, for example, 300°C or less or 100 to 250°C for 1 to 180 minutes or 1 to 120 minutes.

[0103] (Processing Steps) Figures 4(a), 4(b), and 4(c) are schematic cross-sectional views showing one embodiment of a semiconductor device manufacturing method. Below, the method using the temporary fixing material 1 shown in Figure 1(a) will be described in detail as an example.

[0104] In the processing step, the semiconductor component 40, which is temporarily fixed to the silicon carrier substrate 22, is processed. Figure 4(a) shows an example of processing that includes thinning of the semiconductor substrate. Processing of the semiconductor component is not limited to this and may include, for example, thinning of the semiconductor substrate, dicing of the semiconductor component, formation of through electrodes (silicon through electrodes), etching, plating reflow, sputtering, or a combination thereof.

[0105] After processing the semiconductor member 40, a sealing layer 50 is formed to seal the processed semiconductor member 40, as shown in Figure 4(b). The sealing layer 50 can be formed using a sealing material commonly used for the manufacture of semiconductor devices. For example, the sealing layer 50 may be formed using a thermosetting resin composition. Examples of thermosetting resin compositions used for the sealing layer 50 include epoxy resins such as cresol novolac epoxy resin, phenol novolac epoxy resin, biphenyl diepoxy resin, and naphthol novolac epoxy resin. The sealing layer 50 and the thermosetting resin composition for forming the sealing layer 50 may contain additives such as fillers and / or flame retardants.

[0106] The sealing layer 50 is formed using, for example, a solid material, a liquid material, a fine-grained material, or a sealing film. When a sealing film is used, a compression sealing molding machine, a vacuum laminating device, etc., are used. For example, the sealing layer 50 can be formed by covering the semiconductor member 40 with a sealing film that has been heat-melted under the conditions of 40 to 180°C (or 60 to 150°C), 0.1 to 10 MPa (or 0.5 to 8 MPa), and 0.5 to 10 minutes using these devices. The thickness of the sealing film is adjusted so that the sealing layer 50 is greater than or equal to the thickness of the semiconductor member 40 after processing. The thickness of the sealing film may be 50 to 2000 μm, 70 to 1500 μm, or 100 to 1000 μm.

[0107] After forming the sealing layer 50, the sealing layer 50 and the temporary fixing material 1A may be divided into multiple parts, each containing one semiconductor member 40, as shown in Figure 4(c).

[0108] (Separation Process) Figures 5(a) and 5(b) are schematic cross-sectional views showing one embodiment of a semiconductor device manufacturing method. As shown in Figure 5(a), the semiconductor member 40 is separated from the support member 22 by irradiating the temporary fixing material 1A of the laminate 20 with light A including infrared light from the silicon carrier substrate 22 side. Light A may be infrared laser light. The wavelength of the infrared laser light may be any wavelength in the range of 780 nm to 16 μm, for example, 1.908 μm, 1.950 μm, 2.004 μm, 9.3 μm, 10.2 μm, or 10.6 μm. As the light source for light A, gaseous carbon dioxide (CO2) ２ CO2 laser (CO2) is a medium used in carbon dioxide lasers. ２ A gas laser, semiconductor laser, YAG laser, or fiber laser can be used. Upon irradiation with light A, the cured product of component (A) and component (B) in the temporary fixing material layer 1A absorb light A and instantaneously generate heat. The generated heat can cause, for example, melting, carbonization, or sublimation of the cured product of component (A) in the temporary fixing material layer 1A, thermal stress between the silicon carrier substrate 22 and the semiconductor member 40, and scattering of the cured product of component (A) or component (B). One or more of these phenomena are the main causes of cohesive delamination, interfacial delamination, etc., which can easily separate the semiconductor member 40 from the support member 22. In order to separate the semiconductor member 40 from the silicon carrier substrate 22, a small amount of stress may be applied to the semiconductor member 40 along with the irradiation with light A.

[0109] In the separation process, infrared laser light may be continuously irradiated, or pulsed irradiation may be performed in combination. In this case, the pulse rate (frequency) may be, for example, 5 to 10,000 pulses / second, 10 to 1,000 pulses / second, or 50 to 300 pulses / second.

[0110] Also, CO ２ When using a gas laser, light irradiation may be performed under the following conditions: Wavelength: 9.4 μm or 10.6 μm Frequency: 50 to 300 Hz Output: 0.2 to 2 W Focused spot diameter φ: 100 to 500 μm Scan speed: 2 to 12 mm / second Irradiation waveform: Gaussian or pulsed

[0111] Furthermore, when using a fiber laser, light irradiation may be performed under the following conditions: Wavelength: 1.908 μm Frequency: Continuous Output: ~20 W Focused spot diameter φ: 50~300 μm Scan speed: 50~1000 mm / sec Irradiation waveform: Gaussian or pulsed

[0112] A portion of the temporary fixing material may adhere to the separated semiconductor member 40 as residue 1Ac. The adhered residue is removed as shown in Figure 5(b). The adhered residue may be removed, for example, by washing with a solvent or by peeling. The solvent is not particularly limited, but examples include ethanol, methanol, toluene, xylene, acetone, methyl ethyl ketone, methyl isobutyl ketone, hexane, etc. To remove the adhered residue, the semiconductor member 40 may be immersed in the solvent or ultrasonic cleaning may be performed. The semiconductor member 40 may also be heated at a low temperature of about 100°C or below.

[0113] Furthermore, some of the temporary fixing material may adhere to the silicon carrier substrate 22 as residue. The adhering residue can be removed by wiping, air, CO2. ２ It can be removed by simple means such as jet cleaning with fluids, solvent immersion, and peeling. This allows the silicon carrier substrate to be regenerated.

[0114] By the methods exemplified above, a semiconductor element 60 comprising the processed semiconductor member 40 can be obtained. A semiconductor device can be manufactured by connecting the obtained semiconductor element 60 to another semiconductor element or a substrate for mounting semiconductor elements.

[0115] The present invention will be described in more detail below with reference to examples. However, the present invention is not limited to these examples.

[0116] [Preparation and Evaluation of Temporary Fixing Materials] (Examples 1-8) <Preparation of Temporary Fixing Materials> The following materials were used in the preparation of the temporary fixing materials.

[0117] (A) Components: Resin components (A-1) Thermoplastic resin acrylic rubber 1: SG-P3 solvent modified product (product name, manufactured by Nagase ChemteX Corporation, Tg: 12℃, weight average molecular weight: 800,000) (A-2) Thermosetting component epoxy resin 1: N-500P-10 (product name, manufactured by DIC Corporation, o-cresol novolac type epoxy resin, epoxy equivalent: 203 g / eq, softening point: 80-87℃ (solid at 25℃)) Phenolic resin 1: PSM-4326 (product name, manufactured by Gun-ei Chemicals Co., Ltd., phenol novolac resin, hydroxyl group equivalent: 105 g / eq, softening point: 118-122℃ (solid at 25℃)) Curing accelerator 1: 2PZ-CN (product name, manufactured by Shikoku Chemicals, Ltd., 1-cyanoethyl-2-phenylimidazole)

[0118] (B) Ingredients: Carbon filler carbon black 1: FP Black C1115 (product name, manufactured by Sanyo Pigment Co., Ltd., material: carbon black paste, average primary particle size: 300-500 nm)

[0119] (Other ingredients) Inorganic filler 1: YA-050C-AHG (product name, manufactured by Admatex Co., Ltd.)

[0120] The materials shown in Table 1 were used in the parts by mass shown in Table 1 (the values ​​in Table 1 represent the non-volatile content). These were mixed with cyclohexanone as a solvent to obtain a varnish resin composition for forming a temporary fixative.

[0121]

[0122] A carbon-free resin composition varnish was applied to the release surface of a support film (Purex A31B (product name, easy-release type, polyethylene terephthalate (PET) film, Toyobo Film Solutions Co., Ltd., thickness: 38 μm)) using a precision coating machine. The solvent was removed by heating the coating film at 140°C for 5 minutes to form a 50 μm thick carbon-free resin layer.

[0123] A carbon-containing resin composition varnish was applied to the release surface of a support film (Purex A31B (product name, easy-release type, polyethylene terephthalate (PET) film, Toyobo Film Solutions Co., Ltd., thickness: 38 μm)) using a precision coating machine. The solvent was removed by heating the coating film at 140°C for 5 minutes to form carbon-containing resin layers with thicknesses of 20 μm, 30 μm, 60 μm, and 100 μm. The thickness of the carbon-free resin layer was adjusted by changing the amount of varnish applied.

[0124] Using the carbon-free resin layer and carbon-containing resin layer prepared as described above, temporary fixing materials having the structure shown in Table 2 were prepared. In Examples 6 to 8, a roll laminator was used to bond a laminated film in which a carbon-containing resin layer was formed on a support film with a laminated film in which a carbon-free resin layer was formed on a support film at 100°C, so that the carbon-containing resin layer and the carbon-free resin layer were in close contact, thereby preparing the temporary fixing materials.

[0125]

[0126] [Fabrication of Laminates] Using the temporary fixing materials of Examples 1 to 8, test laminates were fabricated according to the following procedure.

[0127] A temporary fixing material was laminated onto a silicon wafer (untreated, size: 50 mm x 50 mm, thickness: 725 μm, thickness variation: ±25 μm) serving as a support member using a vacuum pressure laminator under the conditions of pressure 0.2 MPa, temperature 100 °C, and pressurization time 60 seconds. Next, a silicon wafer (size: 50 mm x 50 mm, thickness: 725 μm) serving as a semiconductor component was laminated onto the temporary fixing material using a vacuum pressure laminator under the conditions of pressure 0.5 MPa, temperature 120 °C, and pressurization time 120 seconds. After that, the temporary fixing material was cured by heating at 180 °C for 30 minutes to create test laminates with semiconductor components temporarily fixed to the silicon wafer.

[0128] [Evaluation of Test Laminates] <Energy Transmittance> The energy transmittance of the fabricated test laminates was measured using the following method. The results are shown in Table 2. [Method for Measuring Energy Transmittance] CO ２ Gas laser (nanosecond pulsed CO2) ２ Using the Laser UPL series (manufactured by Seidensha Electronics Industry Co., Ltd.), a 10.6 μm wavelength CO2 is emitted from the silicon substrate side of the measurement sample. ２ A gas laser beam was irradiated at 15 mJ under the following conditions: Focused spot diameter: 500 μm; Irradiation waveform: pulsed. The energy Et (mJ) transmitted through the sample was measured using a laser power measurement device, and the energy transmittance was calculated using the following formula: Energy transmittance (%) = Et × 100 / 15

[0129] <Evaluation of Adhesion> For the fabricated test laminates, when the semiconductor component of the test laminate was grasped and lifted by hand, the adhesion was evaluated as "A" if the semiconductor component and the support member did not separate, and as "B" if the semiconductor component and the support member separated easily. The results are shown in Table 2.

[0130] <Evaluation of Separability>

[0131] Regarding the test laminates that were fabricated, CO ２ Gas laser (nanosecond pulsed CO2) ２ Using a Laser UPL series (manufactured by Seidensha Electronics Industry Co., Ltd.), pulsed laser light was irradiated from the support member side of the test laminate under one of the following conditions to evaluate the separability when separating semiconductor components from the support member.

[0132]

[0133] Furthermore, regarding the test laminate prepared in the same manner as above, except that a 6-inch silicon wafer (untreated, thickness: 625 μm, thickness variation: ±25 μm) was used as the support member, CO ２ Gas laser (nanosecond pulsed CO2) ２Using a Laser UPL series (manufactured by Seidensha Electronics Industry Co., Ltd.), pulsed laser light was irradiated from the support member side of a test laminate under the following condition 4 to evaluate the separation performance when separating semiconductor components from the support member. [Condition 4] Wavelength: 10.6 μm Focused spot size φ: 500 μm Frequency: 300 Hz Energy: 15 mJ Scan speed: 36 mm / sec

[0134] The separation performance was evaluated as follows: "A" if the silicon wafer could be easily removed after laser irradiation; "B" if the silicon wafer could be easily removed but cutting was required; "C" if force was applied and cutting was required to remove the silicon wafer; and "D" if the silicon wafer could not be removed even with force applied and cutting. The results are shown in Table 2.

[0135] (Examples 9-14) Test laminates were prepared in the same manner as in Examples 2-4 and 6-8.

[0136] [Evaluation of Test Laminates] <Energy Transmittance> The energy transmittance of the fabricated test laminates was measured using the following method. The results are shown in Table 5. [Method for Measuring Energy Transmittance] Using a VFLS-1908 (Connet Laser Technology, output: 20W, oscillation: CW), a fiber laser beam with a wavelength of 1908 nm was irradiated from the silicon substrate side of the measurement sample at 9.6 W under the following conditions: Focused spot diameter: 100 μm Irradiation waveform: Gaussian The energy Et (W) transmitted through the measurement sample was measured using a laser power measurement mechanism, and the energy transmittance was calculated from the following formula: Energy transmittance (%) = Et × 100 / 9.6

[0137] <Evaluation of Adhesion> For the fabricated test laminates, when the semiconductor component of the test laminate was grasped and lifted by hand, the adhesion was evaluated as "A" if the semiconductor component and the support member did not separate, and as "B" if the semiconductor component and the support member separated easily. The results are shown in Table 5.

[0138] <Evaluation of Separability>

[0139] The fabricated test laminate was irradiated with fiber laser light from the support member side of the test laminate using a VFLS-1908 (Connet Laser Technology) (output: 20W, oscillation: CW) under one of the following conditions, and the separability when separating the semiconductor component from the support member was evaluated.

[0140]

[0141]

[0142] 1, 2...Temporary fixing material for silicon carrier substrate, 1A, 2A...Organic temporary fixing material, 10, 11...Carbon-containing resin layer, 12...Carbon-free resin layer, 20, 21...Laminate, 22...Silicon carrier substrate, 40...Semiconductor component, 42...Semiconductor substrate, 44...Redistribution layer, 50...Sealing layer, 60...Semiconductor element.

Claims

1. A method for manufacturing a semiconductor device, comprising: a step of preparing a laminate comprising a silicon carrier substrate and an organic temporary fixing material laminated on the silicon carrier substrate; a step of temporarily fixing a semiconductor member to the silicon carrier substrate via the organic temporary fixing material; a step of processing the semiconductor member temporarily fixed to the silicon carrier substrate; and a step of irradiating the organic temporary fixing material of the laminate with light including infrared light from the silicon carrier substrate side to separate the semiconductor member from the silicon carrier substrate.

2. The method for manufacturing a semiconductor device according to claim 1, wherein the organic temporary fixing material has a carbon-containing resin layer containing a resin component and a carbon filler on the side that is in contact with the silicon carrier substrate.

3. The method for manufacturing a semiconductor device according to claim 2, wherein the organic temporary fixing material further comprises a carbon-free resin layer that contains a resin component and substantially does not contain carbon fillers.

4. The method for manufacturing a semiconductor device according to claim 2, wherein the organic temporary fixing material has a single-layer structure consisting of the carbon-containing resin layer.

5. The method for manufacturing a semiconductor device according to claim 1, wherein the organic temporary fixing material has a single-layer structure consisting of a carbon-free resin layer that contains a resin component and substantially does not contain carbon fillers.

6. The light source is CO ２ A method for manufacturing a semiconductor device according to claim 1, wherein the laser is a gas laser.

7. A temporary fixing material for silicon carrier substrates, which is used by being attached to a silicon carrier substrate and contains a resin component.

8. The temporary fixing material for silicon carrier substrates according to claim 7, further containing a carbon filler.

9. The temporary fixing material for a silicon carrier substrate according to claim 8, having a multilayer structure comprising a carbon-containing resin layer containing resin components and carbon fillers, and a carbon-free resin layer containing resin components and substantially free of carbon fillers, wherein the carbon-containing resin layer is the outermost layer.

10. The temporary fixing material for a silicon carrier substrate according to claim 8, having a single-layer structure consisting of a resin component and a carbon-containing resin layer containing a carbon filler.

11. The temporary fixing material for silicon carrier substrates according to claim 7, having a single-layer structure consisting of a carbon-free resin layer that contains a resin component and substantially does not contain carbon fillers.

12. A temporary fixing material having a multilayer structure comprising a carbon-containing resin layer containing resin components and carbon fillers, and a carbon-free resin layer containing resin components and substantially free of carbon fillers, wherein the carbon-containing resin layer is the outermost layer.

13. A temporary fixing material having a single-layer structure consisting of a resin component and a carbon-containing resin layer containing carbon filler.

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