Slurry, multiple-liquid-type slurry, and polishing method

Abstract

Provided is a slurry containing: at least one amino acid component selected from the group consisting of amino acids (excluding arginine) and salts thereof; and an organic amine compound (excluding the amino acid component). The slurry may not contain abrasive grains, or may further contain abrasive grains.

Description

Slurry, multi-liquid slurry, and polishing method

[0001] This disclosure relates to slurry, multi-liquid slurry, polishing methods, etc.

[0002] In the field of semiconductor manufacturing, as ultra-large-scale integrated circuits (ULSIs) become more powerful, it is becoming increasingly difficult to achieve both high integration and high speed through miniaturization techniques that are merely extensions of conventional technologies. Therefore, technologies are being developed that allow for both miniaturization of semiconductor elements and high integration in the vertical direction (i.e., technologies for multi-layer wiring).

[0003] One of the most important technologies in the process of manufacturing devices with multilayer wiring is CMP (chemical mechanical polishing) technology. CMP technology is a technique for planarizing the surface of a substrate obtained by forming a thin film on a substrate using chemical vapor deposition (CVD), etc. For example, planarization by CMP is essential to ensure the depth of focus in lithography. If there are irregularities on the surface of the substrate, problems such as the inability to focus during the exposure process or the inability to sufficiently form fine wiring structures will occur. Furthermore, CMP technology is used in the device manufacturing process to form plasma oxide films (BPSG, HDP-SiO ２ This process is also applicable to steps such as forming element isolation (inter-element isolation; STI: shallow trench isolation) regions by polishing p-TEOS, etc.; forming ILD films (interlayer insulating films; insulating films that electrically insulate metal components (wiring, etc.) from each other in the same layer); and planarizing plugs (e.g., Al-Cu plugs) after embedding a silicon oxide-containing film in metal wiring.

[0004] CMP is typically performed using a device that can supply polishing fluid onto a polishing pad. The surface of the substrate is polished by pressing the substrate against the polishing pad while supplying polishing fluid between the substrate surface and the polishing pad. Thus, in CMP technology, the polishing fluid is one of the key technologies, and various polishing fluids have been developed to obtain high-performance polishing fluids (see, for example, Patent Document 1 below).

[0005] Japanese Patent Publication No. 2008-288537

[0006] For slurries that can be used as abrasives, it is sometimes necessary to increase the polishing speed of polysilicon.

[0007] One aspect of this disclosure aims to provide a slurry capable of increasing the polishing speed of polysilicon. Another aspect of this disclosure aims to provide a multi-liquid slurry capable of obtaining such a slurry. Yet another aspect of this disclosure aims to provide a polishing method using such a slurry.

[0008] This disclosure relates to the following [1] to

[17] , etc.: [1] A slurry containing at least one amino acid component selected from the group consisting of amino acids (excluding arginine) and salts thereof, and an organic amine compound (excluding the amino acid component). [2] The slurry according to [1], wherein the amino acid component comprises glycine. [3] The slurry according to [1] or [2], wherein the organic amine compound comprises bis(aminoalkyl)norbornane. [4] The slurry according to any one of [1] to [3], wherein the organic amine compound comprises 1,4-diazabicyclo[2.2.2]octane. [5] The slurry according to any one of [1] to [4], wherein the organic amine compound comprises diazabicyclononene. [6] The slurry according to any one of [1] to [5], wherein the organic amine compound comprises arginine. [7] The slurry according to any one of [1] to [6], wherein the organic amine compound comprises a compound that does not have a hydroxyl group and a carboxyl group. [8] The slurry according to any one of [1] to [7], wherein the organic amine compound comprises a compound with a molecular weight of less than 125. [9] The slurry according to any one of [1] to [8], wherein the content of the organic amine compound is 0.001% by mass or more and less than 25.500% by mass, based on the total mass of the slurry.

[10] The slurry according to any one of [1] to [9], wherein the content of the organic amine compound is 0.500% by mass or more, based on the total mass of the slurry.

[11] The slurry according to any one of [1] to

[10] , which does not contain abrasive grains.

[12] The slurry according to any one of [1] to

[10] , which further contains abrasive grains.

[13] The slurry according to

[12] , wherein the abrasive grains contain silica.

[14] The slurry according to any one of [1] to

[13] , which has a pH of 7.0 or higher. A multi-liquid slurry wherein the components of the slurry described in

[15] ,

[12] , or

[13] are stored separately in at least a first liquid and a second liquid, the first liquid contains the abrasive grains, and the second liquid contains at least one selected from the group consisting of the amino acid components and the organic amine compounds. A polishing method comprising the step of polishing a member to be polished using the slurry described in any one of [1] to

[14] .

[17] The polishing method according to

[16] , wherein the member to be polished contains polysilicon.

[0009] According to one aspect of this disclosure, a slurry capable of increasing the polishing speed of polysilicon can be provided. According to another aspect of this disclosure, a multi-liquid slurry capable of obtaining such a slurry can be provided. According to yet another aspect of this disclosure, a polishing method using such a slurry can be provided.

[0010] The embodiments of this disclosure will be described in detail below.

[0011] In this specification, numerical ranges indicated using "~" represent a range that includes the numbers before and after "~" as the minimum and maximum values, respectively. "A or greater" in a numerical range means A and the range greater than A. "A or less" in a numerical range means A and the range less than A. In numerical ranges described stepwise in this specification, the upper or lower limit of a numerical range in one step can be arbitrarily combined with the upper or lower limit of a numerical range in another step. In numerical ranges described in this specification, the upper or lower limit of that numerical range may be replaced with the values ​​shown in the examples. "A or B" means that either A or B may be included, or both may be included. Unless otherwise specified, the materials exemplified in this specification can be used individually or in combination of two or more. The content of each component in a composition means the total amount of multiple substances present in the composition if there are multiple substances corresponding to each component in the composition, unless otherwise specified. The terms "layer" or "film" include not only structures that form across the entire surface when observed in a plan view, but also structures that form in only a portion of the surface. The term "process" includes not only independent processes, but also processes that are not clearly distinguishable from other processes, as long as the intended function of the process is achieved. The term "hydroxyl group" does not include the OH structures contained in carboxyl groups, sulfo groups, and phosphate groups. Unless otherwise specified, alkyl groups may be linear, branched, or cyclic.

[0012] The slurry according to this embodiment contains at least one amino acid component selected from the group consisting of amino acids (excluding arginine) and salts thereof (hereinafter referred to as "amino acid component A") and an organic amine compound (excluding amino acid component A; hereinafter, the organic amine compound excluding amino acid component A is referred to as "organic amine compound B").

[0013] The slurry according to this embodiment can increase the polishing speed of polysilicon. According to the slurry according to this embodiment, in the evaluation described in the examples below, a polishing speed of 1150 Å / min or more (preferably 1200 Å / min or more, 1500 Å / min or more, 2000 Å / min or more, 3000 Å / min or more, 5000 Å / min or more, 8000 Å / min or more, etc.) can be obtained for polysilicon. The following factors are presumed to be the reason why the polishing speed of polysilicon increases. However, the factors are not limited to those described below. That is, it is presumed that by using amino acid component A and organic amine compound B in combination, the nitrogen atom-containing groups in amino acid component A and organic amine compound B coordinate to the Si atoms on the surface of polysilicon, thereby weakening the Si-Si bond and thus increasing the polishing speed of polysilicon.

[0014] According to one embodiment of the slurry of this embodiment, the polishing speed of single-crystal silicon can be increased. According to one embodiment of the slurry of this embodiment, in the evaluation described in the examples below, polishing speeds of single-crystal silicon of 1000 Å / min or more, 2000 Å / min or more, 3000 Å / min or more, 5000 Å / min or more, 8000 Å / min or more can be obtained.

[0015] The slurry according to this embodiment can be used as a polishing slurry and can be used as a CMP polishing solution. The slurry according to this embodiment can be used for polishing a workpiece containing polysilicon. The slurry according to this embodiment only needs to have the property of increasing the polishing speed of polysilicon and may be used for polishing materials other than polysilicon. The slurry according to this embodiment may be used for polishing single-crystal silicon.

[0016] The slurry according to this embodiment contains at least one amino acid component A selected from the group consisting of amino acids (excluding arginine) and salts thereof.

[0017] Examples of amino acids in amino acid component A include glycine, alanine (α-alanine, β-alanine, etc.), asparagine, aspartic acid, cysteine, glutamine, glutamic acid (L-glutamic acid, etc.), histidine (L-histidine, etc.), isoleucine (L-isoleucine, etc.), leucine, lysine, methionine, phenylalanine (L-phenylalanine, etc.), proline (DL-proline, etc.), serine (L-serine, etc.), threonine (DL-threonine, etc.), tryptophan, tyrosine (L-tyrosine, etc.), valine (DL-valine, etc.), and glycylglycine. Examples of amino acid salts in amino acid component A include alkali metal salts (e.g., sodium salts) of the above-mentioned amino acids and acid addition salts (e.g., hydrochloride salts) of the above-mentioned amino acids. From the viewpoint of easily increasing the polishing speed of polysilicon or single-crystal silicon, amino acid component A may contain at least one selected from the group consisting of glycine, proline, isoleucine, valine, alanine, phenylalanine, glutamic acid, histidine, tyrosine, threonine, serine, and glycylglycine, and may contain at least one selected from the group consisting of glycine, proline, isoleucine, valine, alanine, phenylalanine, glutamic acid, histidine, tyrosine, and threonine, and may contain glycine.

[0018] The molecular weight of the amino acid in amino acid component A may be within the following ranges, from the viewpoint of easily increasing the polishing speed of polysilicon or single-crystal silicon. The molecular weight of the amino acid may be 75 or more, 80 or more, 90 or more, 100 or more, 110 or more, 115 or more, 116 or more, 118 or more, 120 or more, greater than 120, 125 or more, 130 or more, 140 or more, 150 or more, 160 or more, 170 or more, or 180 or more. The molecular weight of the amino acid may be 200 or less, 190 or less, 185 or less, 180 or less, 170 or less, 160 or less, 150 or less, 140 or less, 130 or less, 120 or less, 118 or less, 116 or less, 115 or less, 110 or less, 100 or less, 90 or less, or 80 or less. From these perspectives, the molecular weight of an amino acid may be 75-200, 75-160, 75-150, 75-120, or 75-100.

[0019] The content of amino acid component A (total amount of amino acids excluding arginine and their salts; the same applies hereinafter) may be within the following ranges, based on the total mass of the slurry, from the viewpoint of easily increasing the polishing speed of polysilicon or single-crystal silicon. The content of amino acid component A is 0.001% by mass or more, 0.005% by mass or more, 0.010% by mass or more, 0.030% by mass or more, 0.050% by mass or more, 0.060% by mass or more, 0.080% by mass or more, 0.100% by mass or more, 0.120% by mass or more, 0.150% by mass or more, 0.180% by mass or more, 0.200% by mass or more, 0.250% by mass or more, 0.300% by mass or more, 0.350% by mass or more, 0.400% by mass or more, 0.4 50% by mass or more, 0.500% by mass or more, 0.600% by mass or more, 0.700% by mass or more, 0.800% by mass or more, 0.900% by mass or more, 0.950% by mass or more, 1.000% by mass or more, 1.100% by mass or more, It may be 1.200% by mass or more, 1.300% by mass or more, 1.400% by mass or more, 1.500% by mass or more, 1.800% by mass or more, 2.000% by mass or more, 2.500% by mass or more, or 3.000% by mass or more. The content of amino acid component A is 10.000% by mass or less, 8.000% by mass or less, 5.000% by mass or less, 4.000% by mass or less, 3.000% by mass or less, 2.500% by mass or less, 2.000% by mass or less, 1. 800% by mass or less, 1.500% by mass or less, 1.400% by mass or less, 1.300% by mass or less, 1.200% by mass or less, 1.100% by mass or less, 1.000% by mass or less, 0.950% by mass or less, 0.900% by mass 0.800% by mass or less, 0.700% by mass or less, 0.600% by mass or less, 0.500% by mass or less, 0.450% by mass or less, 0.400% by mass or less, 0.350% by mass or less, 0.300% by mass or less, 0.2 It may be 50% by mass or less, 0.200% by mass or less, 0.180% by mass or less, 0.150% by mass or less, 0.120% by mass or less, 0.100% by mass or less, 0.080% by mass or less, or 0.060% by mass or less.From these viewpoints, the content of amino acid component A may be 0.001 to 10.000% by mass, 0.001 to 1.500% by mass, 0.001 to 0.800% by mass, 0.080 to 10.000% by mass, 0.080 to 1.500% by mass, 0.080 to 0.800% by mass, 0.200 to 10.000% by mass, 0.200 to 1.500% by mass, or 0.200 to 0.800% by mass. From the same viewpoints, the content of the compound group or compound included in amino acid component A may also be within each of the above ranges. The content of amino acid component A can be adjusted to an arbitrary range according to the content of organic amine compound B.

[0020] The slurry according to the present embodiment contains an organic amine compound B (an organic amine compound excluding amino acid component A). The organic amine compound B is a compound in which a hydrogen atom of ammonia is substituted with an organic group, and the organic groups may be bonded to each other to form a ring.

[0021] From the viewpoint of easily increasing the polishing rate of polysilicon or single crystal silicon, the organic amine compound B may include at least one selected from the group consisting of primary amine compounds, secondary amine compounds, and tertiary amine compounds. An amine compound having a primary amino group and a secondary amino group or a tertiary amino group shall belong to the primary amine compound. An amine compound having a secondary amino group and a tertiary amino group shall belong to the secondary amine compound.

[0022] From the viewpoint of easily increasing the polishing rate of polysilicon or single crystal silicon, the number of amino groups in the organic amine compound B may be within the following ranges. The number of amino groups may be 1 or more, 2 or more, 3 or more, 4 or more, or 5 or more. The number of amino groups may be 6 or less, 5 or less, 4 or less, 3 or less, or 2 or less. From these viewpoints, the number of amino groups may be 1 to 6, 1 to 5, 1 to 4, all to 3, 1 to 2, 2 to 6, 2 to 5, 2 to 4, 2 to 3, 3 to 6, 3 to 5, or 3 to 4. When the number of amino groups is 2 or more, the amino groups may be bonded to the same carbon atom or different carbon atoms.

[0023] The number of carbon atoms in organic amine compound B may be within the following ranges, from the viewpoint of easily increasing the polishing speed of polysilicon or single-crystal silicon. The number of carbon atoms in organic amine compound B may be 1 or more, 2 or more, 3 or more, 4 or more, 5 or more, 6 or more, 7 or more, 8 or more, or 9 or more. The number of carbon atoms in organic amine compound B may be 12 or less, 11 or less, 10 or less, 9 or less, 8 or less, 7 or less, 6 or less, 5 or less, or 4 or less. From these perspectives, the number of carbon atoms in organic amine compound B may be 1-12, 1-9, 1-8, 1-7, 1-6, 1-5, 1-4, 3-12, 3-9, 3-8, 3-7, 3-6, 3-5, 3-4, 4-12, 4-9, 4-8, 4-7, 4-6, 4-5, 5-12, 5-9, 5-8, 5-7, 5-6, 6-12, 6-9, 6-8, 6-7, 7-12, 7-9, 7-8, 8-12, 8-9, or 9-12.

[0024] Organic amine compound B may include a polycyclic compound (e.g., a bicyclic compound) from the viewpoint of easily increasing the polishing speed of polysilicon or single-crystal silicon, and may include a polycyclic compound (e.g., a bicyclic compound) having one or two alicyclic rings, and may include at least one selected from the group consisting of a polycyclic compound (e.g., a bicyclic compound) having one nitrogen atom shared by two rings (e.g., alicyclic rings), and a polycyclic compound (e.g., a bicyclic compound) having two nitrogen atoms shared by two rings (e.g., alicyclic rings), and from the group consisting of norbornane rings (norbornane skeleton) and norbornene rings (norbornne skeleton) It may contain a compound having at least one selected compound, it may contain bis(aminoalkyl)norbornane, it may contain bis(aminomethyl)norbornane, it may contain a compound having a heterocycle (heterocyclic compound), it may contain a polycyclic compound having a heterocycle (e.g., a bicyclic compound), it may contain a diazabicyclo compound, it may contain a diazabicycloalkane, it may contain diazabicyclooctane, it may contain 1,4-diazabicyclo[2.2.2]octane, it may contain diazabicyclononene, and it may contain 1,5-diazabicyclo[4.3.0]-5-nonene.

[0025] Organic amine compound B may contain monocyclic compounds, monocyclic compounds having alicyclic rings, monocyclic compounds having cycloalkane rings (e.g., cyclohexane rings), monocyclic aromatic compounds (e.g., aromatic carbocyclic compounds), monocyclic compounds having benzene rings, monocyclic heterocyclic compounds (e.g., nitrogen-containing heterocyclic compounds), or monocyclic heteroaromatic compounds (e.g., nitrogen-containing heteroaromatic compounds), from the viewpoint of easily increasing the polishing speed of polysilicon or single-crystal silicon. The number of nitrogen atoms constituting the heterocycle may be 1 to 3, 1 to 2, or 2 to 3, from the viewpoint of easily increasing the polishing speed of polysilicon or single-crystal silicon. Organic amine compound B may include a monocyclic compound having a six-membered heterocycle, a monocyclic compound having a piperidine ring, a monocyclic compound having a pyridine ring, a monocyclic compound having a morpholine ring, a monocyclic compound having a five-membered heterocycle, or a monocyclic compound having an imidazole ring, from the viewpoint of easily increasing the polishing speed of polysilicon or single-crystal silicon.

[0026] The rings in the polycyclic and monocyclic compounds described above may or may not be substituted with substituents (they may be unsubstituted). Substituents include substituted or unsubstituted alkyl groups, hydroxyl groups, carboxyl groups, carboxylic acid bases (salts of carboxyl groups), aldehyde groups, alkoxy groups, ester groups, amino groups, amide groups, nitro groups, cyano groups, mercapto groups, and sulfo groups (HSO4). ３ Base), SO ３ －Examples include groups such as halogen groups (fluoro groups, chloro groups, bromo groups, iodo groups, etc.). The above-mentioned polycyclic and monocyclic compounds may have a ring substituted with at least one selected from the group consisting of aminoalkyl groups and amino groups, or a ring substituted with two amino groups, from the viewpoint of easily increasing the polishing speed of polysilicon or single-crystal silicon.

[0027] Organic amine compound B may contain at least one selected from the group consisting of monocyclic compounds having a cycloalkane ring to which an amino group is bonded, monocyclic compounds having a morpholine ring to which an aminoalkyl group is bonded, monocyclic compounds having a benzene ring to which an aminoalkyl group is bonded, monocyclic compounds having a pyridine ring to which an amino group is bonded, monocyclic compounds having an imidazole ring to which an aminoalkyl group is bonded, and monocyclic compounds having a piperidine ring, from the viewpoint of easily increasing the polishing speed of polysilicon or single-crystal silicon. It may contain at least one selected from the group consisting of cyclic compounds, and may contain at least one selected from the group consisting of cyclohexanediamine (1,2-cyclohexanediamine, 1,4-cyclohexanediamine, etc.), N-aminoalkylmorpholine (N-(3-aminopropyl)morpholine, etc.), benzylamine, diaminopyridine (2,6-diaminopyridine, etc.), N-aminoalkylimidazole (N-(3-aminopropyl)imidazole, etc.), and piperidine, and may contain at least one selected from the group consisting of cyclohexanediamine (1,2-cyclohexanediamine, 1,4-cyclohexanediamine, etc.), benzylamine, diaminopyridine (2,6-diaminopyridine, etc.), and piperidine.

[0028] Organic amine compound B may contain at least one alkylamine selected from the group consisting of alkyl monoamines and alkyl diamines, from the viewpoint of easily increasing the polishing speed of polysilicon or single-crystal silicon. An alkyl monoamine is a compound having one amino group bonded to an alkyl group. An alkyl diamine is a compound having two amino groups bonded to an alkyl group. Organic amine compound B may contain a compound having one chain-like alkyl group and one amino group bonded to the alkyl group, from the viewpoint of easily increasing the polishing speed of polysilicon or single-crystal silicon, a compound having multiple (two or three) chain-like alkyl groups bonded to the nitrogen atom constituting the amino group, or a compound having one chain-like alkyl group and two amino groups bonded to the alkyl group.

[0029] Alkylamines have an alkyl group bonded to a nitrogen atom. The number of alkyl groups bonded to the nitrogen atom may be 1 to 3 or 1 to 2, from the viewpoint of easily increasing the polishing speed of polysilicon or single-crystal silicon. The number of carbon atoms in the alkyl group bonded to the nitrogen atom may be 1 to 5, 1 to 4, 1 to 3, 1 to 2, 2 to 5, 2 to 4, 2 to 3, 3 to 5, 3 to 4, or 4 to 5, from the viewpoint of easily increasing the polishing speed of polysilicon or single-crystal silicon.

[0030] Alkylamines may have hydroxyl groups (they may be amino alcohols) or may not have hydroxyl groups. Organic amine compound B may contain at least one selected from the group consisting of alkyl monoamines having hydroxyl groups, alkyl diamines having hydroxyl groups, alkyl monoamines not having hydroxyl groups, and alkyl diamines not having hydroxyl groups, from the viewpoint of easily increasing the polishing speed of polysilicon or single-crystal silicon. The number of hydroxyl groups in the amino alcohol may be 1 to 3 or 1 to 2 from the viewpoint of easily increasing the polishing speed of polysilicon or single-crystal silicon. When the number of hydroxyl groups is 2 or more, the hydroxyl groups may be bonded to the same carbon atom or to different carbon atoms. Amino alcohols may contain alkanolamines from the viewpoint of easily increasing the polishing speed of polysilicon or single-crystal silicon. Examples of alkanolamines include monoalkanolamines, dialkanolamines, and aminoalkanediols. Organic amine compound B does not necessarily have to contain an amino alcohol. That is, the slurry according to this embodiment does not need to contain an amino alcohol (the amino alcohol content may be substantially 0% by mass based on the total mass of the slurry).

[0031] Examples of amino alcohols include methanolamine, ethanolamine (1-aminoethanol, 2-aminoethanol, etc.), propanolamine (3-amino-1-propanol, 1-amino-2-propanol, etc.), butanolamine (4-amino-1-butanol, etc.), diethanolamine, diaminoethanol, 2-(dimethylamino)ethanol, N-methylethanolamine, 2-(2-aminoethylamino)ethanol, N-(2-hydroxypropyl)ethylenediamine, heptaminol, aminoethanediol (2-amino-1,1-ethanediol, etc.), aminopropanediol (3-amino-1,2-propanediol, 2-amino-1,3-propanediol, 2-amino-2-hydroxymethyl-1,3-propanediol, etc.), and 1-amino-2-buten-1-ol.

[0032] Examples of alkylmonoamines that do not have a hydroxyl group include methylamine, ethylamine, propylamine (n-propylamine and isopropylamine), butylamine (1-butanamine, isobutylamine, t-butylamine, etc.), pentylamine, hexylamine, dimethylamine, diethylamine, dipropylamine, trimethylamine, and triethylamine. Examples of alkyldiamines that do not have a hydroxyl group include methanediamine, ethylenediamine, propanediamine (1,2-propanediamine, 1,3-propanediamine, etc.), butanediamine (1,4-butanediamine, 2,3-butanediamine, etc.), and pentanediamine (1,3-pentanediamine, 2-methyl-1,5-pentanediamine, etc.).

[0033] Organic amine compound B may contain polyethylene polyamine, from the viewpoint of easily increasing the polishing speed of polysilicon or single-crystal silicon. Examples of polyethylene polyamines include diethylenetriamine, triethylenetetramine, and tetraethylenepentamine.

[0034] Organic amine compound B may contain a guanidine compound, from the viewpoint of easily increasing the polishing speed of polysilicon or single-crystal silicon. The guanidine compound is "(R ｂ ) ２N-C(=NR ａ )-N(R ｂ ) ２ 」 having the structure of the compound (R ａ and a plurality of R ｂ each independently represents a monovalent group). R ａ and R ｂ include an alkyl group, an aryl group, an amino group and the like. The alkyl group and the aryl group may be substituted with a substituent. Examples of the guanidine compound include guanidine, alkylguanidine, arylguanidine, salts thereof (for example, acid addition salts), and the like. Examples of the alkylguanidine include monoalkylguanidine, dialkylguanidine, trialkylguanidine, tetraalkylguanidine, N-alkylguanidine, and the like. The organic amine compound B may contain at least one selected from the group consisting of monoalkylguanidine and tetraalkylguanidine, may contain arginine, an arginine salt and tetramethylguanidine, may contain at least one selected from the group consisting of arginine and its salts, and may contain arginine. Examples of the arginine salt include an alkali metal salt of arginine (for example, sodium salt), an acid addition salt of arginine (arginine hydrochloride, arginine aspartate, etc.), and the like.

[0035] Organic amine compound B may contain at least one selected from the group consisting of bis(aminoalkyl)norbornane, diazabicyclo compounds, monocyclic compounds having a cycloalkane ring to which an amino group is attached, monocyclic compounds having a morpholine ring to which an aminoalkyl group is attached, monocyclic compounds having a benzene ring to which an aminoalkyl group is attached, monocyclic compounds having a pyridine ring to which an amino group is attached, monocyclic compounds having an imidazole ring to which an aminoalkyl group is attached, monocyclic compounds having a piperidine ring, alkylmonoamines, alkyldiamines, polyethylene polyamines, and guanidine compounds, from the viewpoint of easily increasing the polishing speed of polysilicon or single-crystal silicon. (Chill) norbornane, 1,4-diazabicyclo[2.2.2]octane, 1,5-diazabicyclo[4.3.0]-5-nonene, 1,4-cyclohexanediamine, N-(3-aminopropyl)morpholine, benzylamine, 2,6-diaminopyridine, N-(3-aminopropyl)imidazole, piperidine, 1-butanamine, isobutylamine, t-butylamine, triethylamine, 1,4-butanediamine, 1,3-pentanediamine, 2-methyl-1,5-pentanediamine, 2-amino-2-hydroxymethyl-1,3-propane It may contain at least one selected from the group consisting of smeardiol, diethanolamine, N-(2-hydroxypropyl)ethylenediamine, tetraethylenepentamine, tetramethylguanidine, and arginine, and may also contain bis(aminomethyl)norbornane, 1,4-diazabicyclo[2.2.2]octane, 1,5-diazabicyclo[4.3.0]-5-nonene, 1,4-cyclohexanediamine, benzylamine, 2,6-diaminopyridine, piperidine, 1-butanamine, isobutylamine, t-butylamine, triethylamine, 1,It may contain at least one selected from the group consisting of 4-butanediamine, 2-amino-2-hydroxymethyl-1,3-propanediol, diethanolamine, tetramethylguanidine, and arginine. Organic amine compound B may contain compounds without hydroxyl and carboxyl groups, from the viewpoint of easily increasing the polishing speed of polysilicon or single-crystal silicon, and may contain compounds without hydroxyl, carboxyl, and carboxylic acid bases.

[0036] Organic amine compound B does not have to contain the compound represented by the following general formula (1). That is, the slurry according to this embodiment does not have to contain the compound represented by the following general formula (1) (the content of the compound represented by the following general formula (1) may be substantially 0% by mass based on the total mass of the slurry).

[0037] [In formula (1), A １ A ２ and A ３ However, each is independently a carbon atom or a nitrogen atom, R １ and R ２ However, each is independent of the hydrogen atom, N(R) Ｎ１ ) ２ , a carboxyl group, or an alkyl group having 1 to 3 carbon atoms, R Ｎ１ However, each can be independently a hydrogen atom or an alkyl group having 1 to 3 carbon atoms, or A １ and A ２ When both are carbon atoms, A １ and A ２ In this configuration, the elements are integrated and fused with the five-membered ring of formula (1) to form a five-membered or six-membered ring; R ３ is a hydrogen atom, N(R) Ｎ２ ) ２ , a carboxyl group, or an alkyl group having 1 to 3 carbon atoms, R Ｎ２ Each of these is independently a hydrogen atom or an alkyl group having 1 to 3 carbon atoms. However, A １ If R is a nitrogen atom, １ It does not exist, A ２ If R is a nitrogen atom, ２ It does not exist, A ３If R is a nitrogen atom, ３ It does not exist.

[0038] Organic amine compound B does not need to contain the compound represented by the following general formula (2-1) and the compound represented by the following general formula (2-2). In other words, the slurry according to this embodiment does not need to contain the compound represented by the following general formula (2-1) and the compound represented by the following general formula (2-2) (the content of the compound represented by the following general formula (2-1) and the compound represented by the following general formula (2-2) may be substantially 0% by mass based on the total mass of the slurry).

[0039] X １１ - (CR １１ R １２ ) ｎ -X １２ (2-1) [In formula (2-1), X １１ and X １２ Each independently contains at least one atom selected from the group consisting of hydrogen, carbon, nitrogen, oxygen, sulfur, and phosphorus atoms, and represents a functional group having a double or triple bond, R １１ and R １２ Each of these independently represents a hydrogen atom, a C1-C4 alkyl group, a C1-C4 hydroxyalkyl group, or an optionally substituted aryl group, and n is an integer from 0 to 2.

[0040] [In formula (2-2), the cyclic portion is a six-membered ring of carbon atoms, and the carbon-carbon bonds in the cyclic portion are single or double bonds, X ２１ , X ２２ , X ２３ , X ２４ and X ２５ Each of these independently represents a hydrogen atom, a carboxyl group, a salt of a carboxyl group, a sulfonic acid group, a salt of a sulfonic acid group, a phosphonic acid group, a salt of a phosphonic acid group, a hydroxyl group, a salt of a hydroxyl group, an alkyl group having 3 or fewer carbon atoms, an alkoxy group having 3 or fewer carbon atoms, a nitro group, or an amino group, and Y represents an anionic functional group.

[0041] Organic amine compound B does not need to contain an azole compound. That is, the slurry according to this embodiment does not need to contain an azole compound (the azole compound content may be substantially 0% by mass based on the total mass of the slurry).

[0042] Organic amine compound B may include compounds with molecular weights within the following ranges, from the viewpoint of easily increasing the polishing speed of polysilicon or single-crystal silicon. The molecular weight of organic amine compound B may be 80 or more, 85 or more, 88 or more, 90 or more, 95 or more, 100 or more, 102 or more, 105 or more, 106 or more, 108 or more, 110 or more, 114 or more, 115 or more, 116 or more, 118 or more, 120 or more, 122 or more, 125 or more, 130 or more, 140 or more, 150 or more, 160 or more, 170 or more, or 180 or more. The molecular weight of organic amine compound B may be 300 or less, 250 or less, 200 or less, 190 or less, 180 or less, 170 or less, 160 or less, 150 or less, 140 or less, 130 or less, 125 or less, less than 125, 122 or less, 120 or less, 118 or less, 116 or less, 115 or less, 114 or less, 110 or less, 108 or less, 106 or less, 105 or less, 102 or less, 100 or less, 95 or less, 90 or less, or 88 or less. From these viewpoints, the molecular weight of organic amine compound B may be 80 to 300, 80 to 200, 80 to 160, 100 to 300, 100 to 200, 100 to 160, 120 to 300, 120 to 200, or 120 to 160.

[0043] The content of organic amine compound B may be within the following ranges, based on the total mass of the slurry, from the viewpoint of easily increasing the polishing speed of polysilicon or single-crystal silicon: The content of organic amine compound B may be 0.001% by mass or more, 0.005% by mass or more, 0.010% by mass or more, 0.030% by mass or more, 0.050% by mass or more, 0.080% by mass or more, 0.100% by mass or more, 0.150% by mass or more, 0.200% by mass or more, 0.300% by mass or more, 0.400% by mass or more, 0.500% by mass or more, more than 0.500% by mass, 0.600% by mass or more, 0.700% by mass or more, 0.800% by mass or more, 0.900% by mass or more, 0.950% by mass or more, 1.000% by mass or more, 1.200% by mass or more, or 1.400% by mass or more. The content of organic amine compound B is 30.000% by mass or less, 25.500% by mass or less, less than 25.500% by mass, 25.000% by mass or less, 20.000% by mass or less, 15.000% by mass or less, 10.000% by mass or less mass% or less, 8.000 mass% or less, 5.000 mass% or less, 4.000 mass% or less, 3.000 mass% or less, 2.000 mass% or less, 1.500 mass% or less, 1.400 mass% or less, 1.200 mass% or less , 1.000 mass% or less, 0.950 mass% or less, 0.900 mass% or less, 0.800 mass% or less, 0.700 mass% or less, 0.600 mass% or less, 0.500 mass% or less, 0.400 mass% or less, 0.30 It may be 0% by mass or less, 0.200% by mass or less, 0.150% by mass or less, 0.100% by mass or less, 0.080% by mass or less, 0.050% by mass or less, 0.030% by mass or less, or 0.010% by mass or less. From these perspectives, the content of organic amine compound B may be 0.001 to 30.000% by mass, 0.001% or more and less than 25.500% by mass, 0.001 to 10.000% by mass, 0.001 to 2.000% by mass, 0.001 to 0.800% by mass, 0.080 to 30.000% by mass, 0.080% or more and less than 25.500% by mass, 0.080 to 10.000% by mass, 0.080 to 2.000% by mass, 0.080 to 0.800% by mass, 0.200 to 30.000% by mass, 0.200% or more and less than 25.500% by mass, 0.200 to 10.000% by mass, 0.200 to 2.000% by mass, or 0.200 to 0.800% by mass.From a similar perspective, the group of compounds included in organic amine compound B, or the content of the compounds, may also be within the ranges described above. The content of organic amine compound B can be adjusted to any range depending on the content of amino acid component A.

[0044] The mass ratio of the content of organic amine compound B to the content of amino acid component A (content of organic amine compound B / content of amino acid component A) may be within the following range, from the viewpoint of easily increasing the polishing speed of polysilicon or single-crystal silicon. The mass ratio may be 0.001 or higher, 0.005 or higher, 0.010 or higher, 0.050 or higher, 0.080 or higher, 0.100 or higher, 0.150 or higher, 0.200 or higher, 0.300 or higher, 0.350 or higher, 0.400 or higher, 0.410 or higher, 0.450 or higher, 0.500 or higher, 0.600 or higher, 0.700 or higher, 0.800 or higher, 0.900 or higher, 1.000 or higher, greater than 1.000, 1.500 or higher, 2.000 or higher, 3.000 or higher, 5.000 or higher, 8.000 or higher, 10.000 or higher, or 20.000 or higher. The mass ratio may be 50.000 or less, 40.000 or less, 30.000 or less, 20.000 or less, 10.000 or less, 8.000 or less, 5.000 or less, 3.000 or less, 2.000 or less, 1.500 or less, 1.000 or less, less than 1.000, 0.900 or less, 0.800 or less, 0.700 or less, 0.600 or less, 0.500 or less, 0.450 or less, 0.410 or less, 0.400 or less, 0.350 or less, 0.300 or less, 0.200 or less, 0.150 or less, 0.100 or less, 0.080 or less, 0.050 or less, 0.010 or less, or 0.005 or less. From these viewpoints, the mass ratio may be 0.001 to 50.000, 0.001 to 5.000, 0.001 to 2.000, 0.050 to 50.000, 0.050 to 5.000, 0.050 to 2.000, 0.500 to 50.000, 0.500 to 5.000, or 0.500 to 2.000. From a similar viewpoint, the mass ratio of the group of compounds or the content of compounds contained in organic amine compound B to the group of compounds or the content of compounds contained in amino acid component A may also be within the above-mentioned ranges.

[0045] The slurry according to this embodiment may or may not contain abrasive grains. Inorganic materials can be used as constituent materials for the abrasive grains, and examples include silica, cerium compounds (compounds containing cerium), alumina, titania, zirconia, magnesia, mullite, silicon nitride, α-sialon, aluminum nitride, titanium nitride, silicon carbide, boron carbide, etc. Examples of cerium compounds include cerium hydroxide, cerium oxide, cerium ammonium nitrate, cerium acetate, cerium sulfate, cerium bromate, cerium bromide, cerium chloride, cerium oxalate, cerium nitrate, cerium carbonate, etc. The abrasive grains may contain silica or colloidal silica from the viewpoint of easily increasing the polishing speed of polysilicon or single-crystal silicon.

[0046] The average particle size of the abrasive grains may be within the following ranges, from the viewpoint of easily increasing the polishing speed of polysilicon or single-crystal silicon. The average particle size of the abrasive grains may be 1 nm or more, 5 nm or more, 10 nm or more, 15 nm or more, 20 nm or more, 25 nm or more, 30 nm or more, 35 nm or more, 40 nm or more, 45 nm or more, 50 nm or more, 55 nm or more, 60 nm or more, 65 nm or more, or 70 nm or more. The average particle size of the abrasive grains may be 1000 nm or less, 900 nm or less, 800 nm or less, 700 nm or less, 600 nm or less, 500 nm or less, 400 nm or less, 300 nm or less, 250 nm or less, 200 nm or less, 180 nm or less, 150 nm or less, 120 nm or less, 100 nm or less, 95 nm or less, 90 nm or less, 85 nm or less, 80 nm or less, 75 nm or less, or 70 nm or less. From these perspectives, the average particle size of the abrasive grains may be 1 to 1000 nm, 1 to 500 nm, 1 to 100 nm, 10 to 1000 nm, 10 to 500 nm, 10 to 100 nm, 50 to 1000 nm, 50 to 500 nm, or 50 to 100 nm. The average particle size of the abrasive grains is the average particle size of the abrasive grains in the slurry and may be the 50% cumulative diameter (D50) in the mass-based cumulative particle size distribution curve. The average particle size of the abrasive grains can be measured by the method described in the examples below.

[0047] The zeta potential (surface potential) of the abrasive grains may be negative in the slurry. The zeta potential of the abrasive grains can be measured by the method described in the examples below.

[0048] The silica content in the abrasive grains may be 50.0% by mass or more, greater than 50.0% by mass, 60.0% by mass or more, 70.0% by mass or more, 80.0% by mass or more, 90.0% by mass or more, 93.0% by mass or more, 95.0% by mass or more, 98.0% by mass or more, 99.0% by mass or more, 99.5% by mass or more, or 99.9% by mass or more, based on the total mass of the abrasive grains (total mass of abrasive grains contained in the slurry), from the viewpoint of easily increasing the polishing speed of polysilicon or single-crystal silicon. The abrasive grains may be substantially composed of silica (a form in which substantially 100% by mass of the abrasive grains is silica).

[0049] The abrasive content may be within the following ranges, based on the total mass of the slurry, from the viewpoint of easily increasing the polishing speed of polysilicon or single-crystal silicon: The abrasive content may be 0.01% by mass or more, 0.05% by mass or more, 0.10% by mass or more, 0.30% by mass or more, 0.50% by mass or more, 0.60% by mass or more, 0.70% by mass or more, 0.80% by mass or more, 0.85% by mass or more, 0.90% by mass or more, 0.95% by mass or more, or 1.00% by mass or more. The content of abrasive grains is 20.00% by mass or less, 15.00% by mass or less, 10.00% by mass or less, 8.00% by mass or less, 6.00% by mass or less, 5.00% by mass or less, 4.00% by mass or less, 3.50 It may be less than or equal to 3.00 mass%, less than 2.50 mass%, less than 2.00 mass%, less than 1.70 mass%, less than 1.50 mass%, less than 1.20 mass%, or less than 1.00 mass%. From these perspectives, the abrasive content may be 0.01 to 20.00 mass%, 0.01 to 10.00 mass%, 0.01 to 3.00 mass%, 0.50 to 20.00 mass%, 0.50 to 10.00 mass%, 0.50 to 3.00 mass%, 0.80 to 20.00 mass%, 0.80 to 10.00 mass%, or 0.80 to 3.00 mass%.

[0050] The mass ratio of the abrasive grain content to the amino acid component A content (abrasive grain content / amino acid component A content) may be within the following ranges from the viewpoint of easily increasing the polishing speed of polysilicon or single-crystal silicon. The mass ratio of the abrasive grain content to the organic amine compound B content (abrasive grain content / organic amine compound B content) may be within the following ranges from the viewpoint of easily increasing the polishing speed of polysilicon or single-crystal silicon. The mass ratio may be 0.001 or more, 0.005 or more, 0.010 or more, 0.050 or more, 0.100 or more, 0.200 or more, 0.300 or more, 0.400 or more, 0.500 or more, 0.600 or more, 0.700 or more, 0.800 or more, 0.900 or more, or 1.000 or more. The mass ratio may be 50.000 or less, 40.000 or less, 30.000 or less, 20.000 or less, 10.000 or less, 9.000 or less, 8.000 or less, 7.000 or less, 6.000 or less, 5.000 or less, 4.000 or less, 3.000 or less, 2.000 or less, 1.500 or less, or 1.200 or less. From these viewpoints, the mass ratio may be 0.001 to 50.000, 0.001 to 5.000, 0.001 to 2.000, 0.050 to 50.000, 0.050 to 5.000, 0.050 to 2.000, 0.500 to 50.000, 0.500 to 5.000, or 0.500 to 2.000. From a similar perspective, the group of compounds included in amino acid component A or the content of the compounds may also be within the ranges described above, and the group of compounds included in organic amine compound B or the content of the compounds may also be within the ranges described above.

[0051] The slurry according to this embodiment may contain water. The water is not particularly limited and may include at least one selected from the group consisting of deionized water, ion-exchanged water, and ultrapure water.

[0052] The slurry according to this embodiment may contain other additives (additives other than abrasive grains, amino acid component A, organic amine compound B, and water). Examples of such additives include acids, bases, polymer compounds, and organic solvents. The slurry according to this embodiment does not need to contain an oxidizing agent (e.g., a metal oxidizing agent). In the slurry according to this embodiment, the content of tetramethylammonium hydroxide may be 0.5% by mass or less, less than 0.5% by mass, 0.1% by mass or less, less than 0.1% by mass, 0.01% by mass or less, or less than 0.01% by mass, based on the total mass of the slurry. The slurry according to this embodiment does not need to contain tetramethylammonium hydroxide, and does not need to contain tetramethylammonium hydroxide and its salts.

[0053] The pH (at 25°C) of the slurry according to this embodiment may be within the following range, from the viewpoint of easily increasing the polishing speed of polysilicon or single-crystal silicon. The pH may be 4.0 or higher, 4.5 or higher, 5.0 or higher, 5.5 or higher, 6.0 or higher, 6.5 or higher, 7.0 or higher, greater than 7.0, 7.5 or higher, 8.0 or higher, greater than 8.0, 8.5 or higher, 8.8 or higher, 8.9 or higher, 9.0 or higher, greater than 9.0, 9.1 or higher, 9.2 or higher, 9.3 or higher, 9.4 or higher, 9.5 or higher, 9.6 or higher, 9.7 or higher, 9.8 or higher, 9.9 or higher, 10.0 or higher, greater than 10.0, 10.1 or higher, 10.2 or higher, 10.3 or higher, 10.4 or higher, 10.5 or higher, 11.0 or higher, 11.3 or higher, or 11.4 or higher. The pH may be 14.0 or less, 13.5 or less, 13.0 or less, 12.5 or less, 12.0 or less, 11.5 or less, 11.4 or less, 11.3 or less, 11.0 or less, 10.5 or less, 10.4 or less, 10.3 or less, 10.2 or less, 10.1 or less, 10.0 or less, less than 10.0, 9.9 or less, 9.8 or less, 9.7 or less, 9.6 or less, 9.5 or less, 9.4 or less, 9.3 or less, 9.2 or less, 9.1 or less, 9.0 or less, 8.9 or less, 8.8 or less, 8.5 or less, 8.0 or less, 7.5 or less, or 7.0 or less. From these viewpoints, the pH may be 4.0 to 14.0, 4.0 to 11.5, 4.0 to 10.0, 7.0 to 14.0, 7.0 to 11.5, 7.0 to 10.0, 9.0 to 14.0, 9.0 to 11.5, or 9.0 to 10.0. The pH can be measured by the method described in the examples below. The pH of the slurry according to this embodiment may vary depending on the type and content of the components contained in the slurry. The slurry according to this embodiment may contain a pH adjusting agent for adjusting the pH, or it may not contain a pH adjusting agent. Acids, bases, etc., may be used as pH adjusting agents.

[0054] The slurry according to this embodiment may be stored as a storage liquid with a reduced amount of water compared to that used during polishing. One embodiment of the slurry according to this embodiment may be such a storage liquid. The storage liquid can be used by diluting it with water before or during polishing.

[0055] The slurry according to this embodiment may be stored as a single-liquid slurry, or as a multi-liquid slurry (slurry set) having at least a first liquid and a second liquid. In a multi-liquid slurry, the components of the slurry may be separated into a first liquid and a second liquid so that at least the first liquid and the second liquid are mixed to form the slurry (slurry for polishing). For example, if the slurry according to this embodiment contains abrasive grains, the multi-liquid slurry according to this embodiment may be stored with the above-mentioned components of the slurry separated into at least a first liquid and a second liquid, the first liquid containing abrasive grains, and the second liquid containing at least one selected from the group consisting of amino acid component A and organic amine compound B. The multi-liquid slurry according to this embodiment may be configured such that the first liquid contains abrasive grains and one of amino acid component A and organic amine compound B, and the second liquid contains the other of amino acid component A and organic amine compound B. The components of the slurry may be stored separated into three or more liquids. In a multi-liquid slurry, the first liquid and the second liquid may be mixed before or during polishing. The first liquid and the second liquid in the multi-liquid slurry may be supplied separately to a polishing platen, and the first liquid and the second liquid may be mixed on the polishing platen. The liquids constituting the multi-liquid slurry (first liquid, second liquid, etc.) may be stored as a storage liquid with less water than used during polishing, and may be used by diluting with water before or during polishing.

[0056] The polishing method according to this embodiment comprises a polishing step of polishing a member to be polished using a slurry according to this embodiment. The member to be polished may contain polysilicon, may contain single-crystal silicon, or may contain both polysilicon and single-crystal silicon. The shape of the member to be polished is not particularly limited and may be, for example, a film. In the polishing step, it is possible to polish the surface of the member to be polished, and the surface to be polished where polysilicon is present may be polished, the surface to be polished where single-crystal silicon is present may be polished, or the surface to be polished where both polysilicon and single-crystal silicon are present may be polished. In the polishing step, at least a portion of the member to be polished can be polished and removed. The slurry used in the polishing step (the slurry according to this embodiment) may be the one-liquid slurry described above, may be a slurry obtained by diluting the storage liquid described above with water, or may be a slurry obtained by mixing at least the first liquid and the second liquid in the multi-liquid slurry described above. The member to be polished is not particularly limited and may be a wafer (e.g., a semiconductor wafer) or a chip (e.g., a semiconductor chip). The member to be polished may be a wiring board or a circuit board.

[0057] The method for manufacturing a component according to this embodiment includes a component manufacturing step of obtaining a component using a workpiece (substrate) polished by the polishing method according to this embodiment. The component according to this embodiment is a component obtained by the method for manufacturing a component according to this embodiment. The component according to this embodiment is not particularly limited and may be an electronic component (e.g., a semiconductor component such as a semiconductor package), a wafer (e.g., a semiconductor wafer), or a chip (e.g., a semiconductor chip). As one embodiment of the method for manufacturing a component according to this embodiment, the method for manufacturing an electronic component according to this embodiment includes a step of obtaining an electronic component using a workpiece polished by the polishing method according to this embodiment. As one embodiment of the method for manufacturing a component according to this embodiment, the method for manufacturing a semiconductor component according to this embodiment includes a step of obtaining a semiconductor component (e.g., a semiconductor package) using a workpiece polished by the polishing method according to this embodiment. The method for manufacturing a component according to this embodiment may include a polishing step of polishing the workpiece by the polishing method according to this embodiment before the component manufacturing step.

[0058] As one aspect of the component manufacturing process according to this embodiment, the component manufacturing process may include a piece-forming step in which the member to be polished (substrate) polished by the polishing method according to this embodiment is divided into individual pieces. The piece-forming step may be, for example, a step of dicing a wafer (e.g., a semiconductor wafer) polished by the polishing method according to this embodiment to obtain a chip (e.g., a semiconductor chip). As one aspect of the component manufacturing process according to this embodiment, the electronic component manufacturing process according to this embodiment may include a step of obtaining an electronic component (e.g., a semiconductor component) by dividing the member to be polished by the polishing method according to this embodiment into individual pieces. As one aspect of the component manufacturing process according to this embodiment, the semiconductor component manufacturing process according to this embodiment may include a step of obtaining a semiconductor component (e.g., a semiconductor package) by dividing the member to be polished by the polishing method according to this embodiment into individual pieces.

[0059] The method for manufacturing a part according to this embodiment may include, as one aspect of the part manufacturing process, a connection step of connecting (for example, electrically connecting) a member to be polished (substrate) polished by the polishing method according to this embodiment to another connected body. The connected body connected to the member to be polished by the polishing method according to this embodiment is not particularly limited and may be the member to be polished by the polishing method according to this embodiment, or it may be a connected body different from the member to be polished by the polishing method according to this embodiment. In the connection step, the member to be polished and the connected body may be directly connected (connected in a state where the member to be polished and the connected body are in contact), or they may be connected via another member (such as a conductive member). The connection step can be performed before the individualization step, after the individualization step, or before and after the individualization step.

[0060] The connection step may be a step of connecting the surface of the member to be polished, which has been polished by the polishing method according to this embodiment, to the connected body, or a step of connecting the connecting surface of the member to be polished, which has been polished by the polishing method according to this embodiment, to the connecting surface of the connected body. The connecting surface of the member to be polished may be the surface of the member to be polished, which has been polished by the polishing method according to this embodiment. By the connection step, a connected body comprising the member to be polished and the connected body can be obtained. In the connection step, if the connecting surface of the member to be polished has a metal part, the connected body may be brought into contact with the metal part. In the connection step, if the connecting surface of the member to be polished has a metal part and the connecting surface of the connected body has a metal part, the metal parts may be brought into contact with each other. The metal part may contain copper.

[0061] The device according to this embodiment (for example, an electronic device such as a semiconductor device) comprises a member to be polished by the polishing method according to this embodiment, and at least one selected from the group consisting of the component according to this embodiment.

[0062] The present disclosure will be described in more detail below with reference to examples, but the present disclosure is not limited to these examples.

[0063] <Preparation of Polishing Slurry> (Examples A1 to A46) Polishing slurry was prepared by mixing amino acid component A and organic amine compound B shown in Tables 1 to 3 with water. The content of amino acid component A and organic amine compound B (reference: total mass of polishing slurry) is shown in Tables 1 to 3. In the table, "DABCO" represents 1,4-diazabicyclo[2.2.2]octane and "DBN" represents 1,5-diazabicyclo[4.3.0]-5-nonene.

[0064] (Comparative Example A1) A polishing slurry was prepared by mixing bis(aminomethyl)norbornane with water. Based on the total mass of the polishing slurry, the bis(aminomethyl)norbornane content was 1.000% by mass.

[0065] (Comparative Example A2) A polishing slurry was prepared by mixing glycine with water. The glycine content was 1.000% by mass based on the total mass of the polishing slurry.

[0066] (Examples B1 to B20) By mixing the amino acid component A and organic amine compound B shown in Table 4 with water, an additive solution was prepared in which the respective contents of amino acid component A and organic amine compound B (reference: total mass of the additive solution) were 1.000% by mass. A polishing slurry was prepared by mixing this additive solution with an aqueous dispersion of colloidal silica (abrasive grains) in a mass ratio of 95:5. Based on the total mass of the polishing slurry, the respective contents of amino acid component A and organic amine compound B were 0.950% by mass, and the abrasive grain content was 1.000% by mass.

[0067] (Example B21) A polishing slurry was prepared by mixing glycine, bis(aminomethyl)norbornane, colloidal silica (abrasive grains), and water. Based on the total mass of the polishing slurry, the content of glycine and bis(aminomethyl)norbornane was 0.100% by mass, and the content of abrasive grains was 1.000% by mass.

[0068] (Comparative Example B1) A polishing slurry was prepared by mixing glycine with an aqueous dispersion of colloidal silica (abrasive grains). Based on the total mass of the polishing slurry, the glycine content was 0.950% by mass and the abrasive grain content was 1.000% by mass.

[0069] <Measurement of Abrasive Grain Size> The average particle size (D50) of abrasive grains in the polishing slurries of Examples B1 to B21 and Comparative Example B1 was measured under the following conditions. The average particle size of abrasive grains in each of Examples B1 to B21 and Comparative Example B1 was 70 nm. Measurement temperature: 25°C Measurement device: Wyatt Technology Co., Ltd., product name "Mobius" Measurement method: A laser beam was irradiated onto an appropriate amount of polishing slurry, and the particle size distribution was obtained by calculating the particle size information obtained based on the scattered light. The value of D50 obtained based on this particle size distribution was obtained as the average particle size.

[0070] <Zeta Potential Measurement> Using the product name "DT-1202" manufactured by Dispersion Technology, the zeta potential of the abrasive grains in the polishing slurries of Examples B1 to B21 and Comparative Example B1 was measured three times at 25°C. The average value of the displayed zeta potential was obtained as the zeta potential measurement result. In each of Examples B1 to B21 and Comparative Example B1, the zeta potential of the abrasive grains was negative.

[0071] <pH Measurement> The pH of each polishing slurry in the above-described examples and comparative examples was measured under the following conditions. The results are shown in Tables 1 to 4. Measurement temperature: 25°C Measuring device: Model (D-71), manufactured by Horiba, Ltd. Measurement method: A pH meter was calibrated at three points using phthalate pH standard solution (pH: 4.01), neutral phosphate pH standard solution (pH: 6.86), and borate pH standard solution (pH: 9.18) as pH standard solutions. After that, the electrode of the pH meter was placed in the polishing slurry, and the pH was measured using the above-described measuring device after it had stabilized for more than two minutes.

[0072] <Evaluation of polishing speed> Blanket wafer A with a diameter of 300 mm and a polysilicon film (p-Si) on its surface was prepared. A silicon wafer (single crystal silicon) with a diameter of 300 mm was prepared as blanket wafer B.

[0073] Blanket wafer A was polished using a commercially available polishing solution containing silica abrasive particles (pH = approximately 10) to remove the native oxide film. After that, blanket wafer A was polished using the polishing slurries of the above-mentioned examples and comparative examples under the following polishing conditions. Blanket wafer B was polished using the polishing slurries of Examples B1, B2, and B4-B16 under the following polishing conditions. Polishing apparatus: FREX 300X (manufactured by Ebara Corporation) Slurry flow rate: 250 mL / min Polishing pad: Polyurethane pad (manufactured by DuPont, model number: IK4250H) Polishing pressure: 14.7 kPa (2 psi) Plate rotation speed: 90 min －１ (Blanket wafer A), 120 min －１(Blanket wafer B) Polishing time: 30 seconds (Blanket wafer A: does not include time for removing the native oxide film), 90 seconds (Blanket wafer B) Cleaning: After polishing, the blanket wafers were washed with water and then dried with a spin dryer.

[0074] Using an optical interferometry film thickness measuring device (Nova Ltd., product name: nova i500), the film thickness change at multiple measurement points in the inner region of the polysilicon film on blanket wafer A was measured, excluding the outermost 5 mm region. The polishing rate at each measurement point was obtained. The measurement points were located in the diametrical direction passing through the center point of the inner region, at -145 mm, -140 mm, -135 mm, ... (5 mm intervals) ..., -10 mm and -5 mm from the center point, the center point itself, and at +5 mm, +10 mm, ... (5 mm intervals) ..., +135 mm, +140 mm and +145 mm from the center point. The average value of the polishing rate at each measurement point was obtained as the polysilicon polishing rate (unit: Å / min). The results are shown in Tables 1 to 4.

[0075] The polishing rate of single-crystal silicon was determined by weighing. Specifically, after determining the mass difference of blanket wafer B before and after polishing, the polishing rate of single-crystal silicon (unit: Å / min) was obtained based on the density of the single-crystal silicon and the area of ​​the polished surface of blanket wafer B. The results are shown in Table 4.

[0076]

[0077]

[0078]

[0079]

Claims

A slurry containing at least one amino acid component selected from the group consisting of amino acids (excluding arginine) and their salts, and an organic amine compound (excluding the aforementioned amino acid component). 　 The slurry according to claim 1, wherein the amino acid component includes glycine. 　 The slurry according to claim 1, wherein the organic amine compound comprises bis(aminoalkyl)norbornane. 　 The slurry according to claim 1, wherein the organic amine compound comprises 1,4-diazabicyclo[2.2.2]octane. 　 The slurry according to claim 1, wherein the organic amine compound comprises diazabicyclononene. 　 The slurry according to claim 1, wherein the organic amine compound comprises arginine. 　 The slurry according to claim 1, wherein the organic amine compound includes a compound that does not have a hydroxyl group and a carboxyl group. 　 The slurry according to claim 1, wherein the organic amine compound includes a compound with a molecular weight of less than 125. 　 The slurry according to claim 8, wherein the content of the organic amine compound is 0.001% by mass or more and less than 25.500% by mass, based on the total mass of the slurry. 　 The slurry according to claim 1, wherein the content of the organic amine compound is 0.500% by mass or more based on the total mass of the slurry. 　 The slurry according to claim 1, which does not contain abrasive particles. 　 The slurry according to claim 1, further containing abrasive grains. 　 The slurry according to claim 12, wherein the abrasive grains contain silica. 　 The slurry according to claim 1, wherein the pH is 7.0 or higher. 　 The components of the slurry according to claim 12 are stored separately in at least a first liquid and a second liquid. The first liquid contains the abrasive particles, A multi-liquid slurry wherein the second liquid contains at least one selected from the group consisting of the amino acid component and the organic amine compound. 　 A polishing method comprising the step of polishing a member to be polished using a slurry described in any one of claims 1 to 14. 　 The polishing method according to claim 16, wherein the member to be polished contains polysilicon.

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