Film formation device and method of film formation
Patent Information
- Authority / Receiving Office
- WO · WO
- Patent Type
- Applications
- Current Assignee / Owner
- NIKON CORP
- Filing Date
- 2026-01-27
- Publication Date
- 2026-07-30
Smart Images

Figure JP2026002536_30072026_PF_FP_ABST
Abstract
Description
Film forming apparatus and film forming method
[0001] The present invention relates to a film forming apparatus and a film forming method. The present invention claims the priority of Japanese Patent Application No. 2025-011576 filed on January 27, 2025, and for designated countries where incorporation by reference is permitted, the contents described in that application are incorporated herein by reference.
[0002] Conventionally, as a method for forming a film on a substrate, a sputtering method as shown in Patent Document 1 has been used. The sputtering method requires film formation in an environment with pressure control.
[0003] Japanese Patent Application Laid-Open No. 09-104976
[0004] A first aspect of the present invention is a film forming apparatus, comprising: an atomizer that generates mist from a liquid containing a film forming component; a film forming chamber that is connected to the atomizer and attaches the mist supplied from the atomizer to a film forming object; a transmission part located in at least one of the atomizer, the flow path of the mist from the atomizer to the film forming chamber, and the film forming chamber; a first detection mechanism that detects parameters of the optical characteristics of the mist through the transmission part; a control mechanism that controls mist supply conditions; and an anti-fog gas supply port that supplies an anti-fog gas for removing the mist adhering to the transmission part or preventing the mist from adhering to the transmission part, wherein the control mechanism changes the mist supply conditions according to the parameters of the optical characteristics of the mist.
[0005] Another aspect of the present invention is a film forming apparatus, comprising: an atomizer that generates mist from a liquid containing a film forming component; a film forming chamber that attaches the mist supplied from the atomizer to a film forming object; a first detection mechanism that detects parameters indicating the state of the mist; and a control mechanism that controls mist supply conditions, wherein the first detection mechanism is a thermometer or a hygrometer.
[0006] Another aspect of the present invention is a film-forming method comprising: generating mist from a liquid containing a film-forming component using an atomizer; adhering the mist supplied from the atomizer to an object to be film-formed; detecting parameters of the optical properties of the mist via a permeable portion located in at least one of the atomizer, a mist flow path from the atomizer to a film-forming chamber, and the film-forming chamber; controlling the mist supply conditions; and supplying an anti-fog gas to remove the mist adhering to the permeable portion or to prevent the mist from adhering to the permeable portion, wherein controlling the mist supply conditions includes changing the mist supply conditions according to the parameters of the optical properties of the mist.
[0007] Another aspect of the present invention is a film-forming method comprising: generating mist from a liquid containing a film-forming component using an atomizer; adhering the mist supplied from the atomizer to an object to be film-formed; detecting parameters indicating the state of the mist using a first detection mechanism; and controlling the mist supply conditions, wherein the first detection mechanism is a thermometer or a hygrometer.
[0008] Another aspect of the present invention is a film-forming apparatus comprising: an atomizer for generating mist from a liquid containing a film-forming component; a film-forming chamber connected to the atomizer for adhering the mist supplied from the atomizer to an object to be film-formed; a permeable section; a holding section for holding the permeable section with respect to at least one of the atomizer, the mist flow path from the atomizer to the film-forming chamber, and the film-forming chamber; a first detection mechanism for detecting parameters of the optical properties of the mist via the permeable section; a control mechanism for controlling mist supply conditions; and an anti-fog gas supply port for supplying an anti-fog gas to suppress the adhesion of the mist to the permeable section, wherein the control mechanism changes the mist supply conditions according to the parameters of the optical properties of the mist, and the holding section has one or more anti-fog gas supply ports.
[0009] Another aspect of the present invention is a film-forming apparatus comprising: an atomizer for generating mist from a liquid containing a film-forming component; a film-forming chamber connected to the atomizer for adhering the mist supplied from the atomizer to an object to be film-formed; a permeable section located in at least one of the atomizer, a mist flow path from the atomizer to the film-forming chamber, and the film-forming chamber; a first detection mechanism for detecting parameters of the optical properties of the mist via the permeable section; a control mechanism for controlling mist supply conditions; and an anti-fog gas supply port for supplying an anti-fog gas to suppress the adhesion of the mist to the permeable section, wherein the control mechanism changes the mist supply conditions according to the parameters of the optical properties of the mist, and a plurality of anti-fog gas supply ports are provided for one permeable section.
[0010] Another aspect of the present invention is a film-forming apparatus comprising: an atomizer for generating mist from a liquid containing a film-forming component; a film-forming chamber connected to the atomizer for adhering the mist supplied from the atomizer to an object to be film-formed; a permeable section located in at least one of the atomizer, the mist flow path from the atomizer to the film-forming chamber, and the film-forming chamber; a first detection mechanism for detecting parameters of the optical properties of the mist via the permeable section; a control mechanism for controlling mist supply conditions; and an anti-fog gas supply port for supplying an anti-fog gas to suppress the adhesion of the mist to the permeable section, wherein the control mechanism changes the mist supply conditions according to the parameters of the optical properties of the mist, the permeable section has a plane on the inside side of the atomizer, the mist flow path, or the film-forming chamber on which the permeable section is provided, and the anti-fog gas supply port supplies the anti-fog gas in a direction parallel to the plane of the permeable section.
[0011] Another aspect of the present invention is a film-forming method comprising: generating mist from a liquid containing a film-forming component using an atomizer; adhering the mist supplied from the atomizer to an object to be film-formed; detecting parameters of the optical properties of the mist via a permeable section located in at least one of the atomizer, the mist flow path from the atomizer to the film-forming chamber, and the film-forming chamber; controlling the mist supply conditions; and supplying an anti-fog gas from an anti-fog gas supply port to suppress the adhesion of the mist to the permeable section, wherein controlling the mist supply conditions includes changing the mist supply conditions according to the parameters of the optical properties of the mist, and a plurality of anti-fog gas supply ports are provided for one permeable section.
[0012] Another aspect of the present invention is a film-forming method comprising: generating mist from a liquid containing a film-forming component using an atomizer; adhering the mist supplied from the atomizer to an object to be film-formed; detecting parameters of the optical properties of the mist via a permeable section located in at least one of the atomizer, the mist flow path from the atomizer to the film-forming chamber, and the film-forming chamber; controlling the mist supply conditions; and supplying an anti-fog gas from an anti-fog gas supply port to suppress the adhesion of the mist to the permeable section, wherein controlling the mist supply conditions includes changing the mist supply conditions according to the parameters of the optical properties of the mist, and a plurality of anti-fog gas supply ports are provided for one permeable section.
[0013] Another aspect of the present invention is a film-forming method comprising: generating mist from a liquid containing a film-forming component using an atomizer; adhering the mist supplied from the atomizer to an object to be film-formed; detecting parameters of the optical properties of the mist via a permeable portion located in at least one of the atomizer, the mist flow path from the atomizer to the film-forming chamber, and the film-forming chamber; controlling the mist supply conditions; and supplying an anti-fog gas from an anti-fog gas supply port to suppress the adhesion of the mist to the permeable portion, wherein controlling the mist supply conditions includes changing the mist supply conditions according to the parameters of the optical properties of the mist, the permeable portion having a surface facing the interior side of the atomizer, the mist flow path, or the film-forming chamber on which the permeable portion is provided, and the anti-fog gas supply port supplies the anti-fog gas in a direction parallel to the surface of the permeable portion.
[0014] This is a schematic diagram showing an example of a film deposition apparatus according to the first embodiment. This is a diagram showing an example of a functional block of a control device according to the first embodiment. This is a schematic diagram showing an example (part 1) of a first detection mechanism according to modification 1 of the first embodiment. This is a schematic diagram showing an example (part 2) of a first detection mechanism according to modification 1 of the first embodiment. This is a schematic diagram showing an example of a first detection mechanism according to modification 2 of the first embodiment. This is a schematic diagram showing an example of a film deposition apparatus according to modification 3 of the first embodiment. This is a schematic diagram showing an example of a film deposition apparatus according to the second embodiment. This is a diagram showing an example of a functional block of a control device according to the second embodiment. This is a schematic diagram showing an example of a film deposition apparatus according to the third embodiment. This is a diagram showing an example of a functional block of a control device according to the third embodiment. This is a schematic diagram showing an example of an atomizer according to modification 1 of the third embodiment. This is a schematic diagram showing an example of an atomizer according to modification 2 of the third embodiment. This is a schematic diagram showing an example of an atomizer according to modification 3 of the third embodiment. This is a graph plotting the water level over time in Example 1. This is a graph showing the measurement results of Example 2. This is a graph showing the measurement results of Example 3. This is a graph showing the measurement results of Example 4. This is a schematic diagram showing an example (1) of the first detection mechanism according to the fifth embodiment. This is a schematic diagram showing an example (2) of the first detection mechanism according to the fifth embodiment. This is a schematic diagram showing an example (3) of the first detection mechanism according to the fifth embodiment. This is a diagram (1) for explaining the direction of supply of the second gas from the second gas supply port in the fifth embodiment. This is a diagram (2) for explaining the direction of supply of the second gas from the second gas supply port in the fifth embodiment. This is a diagram (3) for explaining the direction of supply of the second gas from the second gas supply port in the fifth embodiment. This is a diagram (4) for explaining the direction of supply of the second gas from the second gas supply port in the fifth embodiment. This is a diagram (5) for explaining the direction of supply of the second gas from the second gas supply port in the fifth embodiment.
[0015] Hereinafter, a preferred embodiment of the film-forming apparatus 100 according to an embodiment for carrying out the present invention (hereinafter referred to as "this embodiment") will be described in detail with reference to the attached drawings. The following embodiment is for the purpose of explaining the present invention and is not intended to limit the present invention to the following content. In the drawings, positional relationships such as up, down, left, and right shall be based on the positional relationships shown in the drawings unless otherwise specified. Furthermore, the dimensional ratios in the drawings are not limited to the ratios shown. In the following description, an XYZ Cartesian coordinate system is set up, and the X-axis direction, Y-axis direction, and Z-axis direction are defined according to the arrows shown in the drawings.
[0016] <First Embodiment> The film deposition apparatus 100 according to the first embodiment will be described below.
[0017] Figure 1 is a schematic diagram showing an example of a film deposition apparatus 100 according to the first embodiment. The film deposition apparatus 100 of this embodiment comprises a film deposition chamber 10, an atomizer 20, a connecting pipe 30, a first detection mechanism 40, and a control device 50, which will be described later.
[0018] The film deposition chamber 10 houses the object to be deposited on S and deposits mist M supplied from the atomizer 20 onto the object to be deposited on S. The film deposition chamber 10 comprises an outer container 11, a mist supply port 12, and an object to be deposited on holding member 13. The outer container 11 is a container that houses the mist supply port 12 and the object to be deposited on holding member 13, and has a wall surface that separates the inside from the outside of the film deposition chamber 10. The wall surface includes the floor surface and the top surface. The mist supply port 12 is one end of the connecting pipe 30 on the film deposition chamber 10 side and supplies mist M containing film-forming components to the film deposition chamber 10. The object to be deposited on holding member 13 holds the object to be deposited on S. The film deposition chamber 10 may also have a discharge pipe (not shown) for discharging internal air to the outside. Alternatively, the film deposition chamber 10 may not have an object to be deposited on holding member 13, and the object to be deposited on may be placed directly on the floor surface.
[0019] The atomizer 20 generates mist M from liquid D containing film-forming components. The atomizer 20 comprises an inner container 21, an outer container 22, an ultrasonic transducer 23, an atomizer outlet 24, a first gas supply pipe 25, and a first gas supply outlet 26. The inner container 21 is a container for holding liquid D. The inner container 21 may have a lid. Liquid D is a dispersion liquid in which particles containing film-forming components are dispersed in a dispersion medium. Note that liquid D may be any liquid containing film-forming components and is not limited to a dispersion liquid. The outer container 22 is a container for holding the propagating liquid E in addition to the inner container 21 and the ultrasonic transducer 23. The outer container 22 has a wall surface that separates the inside and outside of the atomizer 20 and may have a lid.
[0020] The ultrasonic transducer 23 generates vibrations. The vibrations generated by the ultrasonic transducer 23 are transmitted to the liquid D in the inner container 21 by the propagating liquid E. The installation position of the ultrasonic transducer 23 is not limited; any structure that allows the vibrations of the ultrasonic transducer 23 to be transmitted to the liquid D is acceptable. When the vibrations of the ultrasonic transducer 23 are transmitted to the liquid D, the atomizer 20 does not need to have an outer container 22 and a propagating liquid E. In addition, any transducer that generates mist M can be used as the ultrasonic transducer 23, and it may not even be an ultrasonic transducer. The frequency of the ultrasonic transducer 23 can be set as appropriate, for example, from 100 Hz to 1,000,000 kHz. The output of the ultrasonic transducer 23 can be from 10 W to 200 W.
[0021] The atomizer outlet 24 is one end of the connecting pipe 30 on the atomizer 20 side, and guides the mist M generated in the atomizer 20 to the film formation chamber 10 via the connecting pipe 30. The first gas supply pipe 25 sends the first gas G1 that carries the mist M to the internal container 21. For example, the first gas supply pipe 25 is attached to the top or lid of the internal container 21.
[0022] The end of the first gas supply pipe 25 on the atomizer 20 side is the first gas supply port 26, which allows the first gas G1 for transporting the mist M to flow into the inner container 21 from the first gas supply port 26. The first gas G1 can also be called a carrier gas, as it is used to transport the mist M. The arrow a1 shown in Figure 1 indicates the direction of movement of the first gas G1. The position and configuration of the first gas supply pipe 25 and the first gas supply port 26 are not particularly limited, and it is sufficient as long as they can supply the first gas G1 into the inner container 21.
[0023] The first gas G1 is treated as a transport gas. That is, the first gas supply pipe 25 can be called a transport gas supply pipe, and the first gas supply port 26 can be called a transport gas supply port. It may also have uses other than transport.
[0024] The connecting pipe 30 connects the film deposition chamber 10 and the atomizer 20, and transports the mist M generated in the atomizer 20 to the film deposition chamber 10 together with the first gas G1. The arrow a2 shown in Figure 1 indicates the direction of movement of the mist M in the connecting pipe 30. The connecting pipe 30 can be a hollow cylindrical pipe, tube, etc., with open ends, but it is sufficient that it can deliver the mist M from the atomizer 20 to the film deposition chamber 10, and its shape is not particularly limited. The material of the connecting pipe 30 can be metal, resin, etc., but is not particularly limited. In addition, to reduce material loss due to mist M adhering to the inside of the connecting pipe 30, a water-repellent or oil-repellent material may be used, or a water-repellent or oil-repellent coating such as a water-repellent film or oil-repellent film may be applied to the inside of the connecting pipe 30. The connecting pipe 30 may also be cooled.
[0025] The connecting pipe 30 is connected to or inserted through the internal container 21. One end of the connecting pipe 30 on the atomizer 20 side is open and functions as an atomizer outlet 24. The other end of the connecting pipe 30 on the film formation chamber 10 side is open and functions as a mist supply port 12.
[0026] The connecting pipe 30 includes a second gas supply pipe 31. The second gas supply pipe 31 is a pipe-like component that supplies the second gas G2 to the connecting pipe 30, with one end connected to the connecting pipe 30 and functioning as a second gas supply port 32. The arrow a3 shown in Figure 1 indicates the direction of inflow of the second gas G2. The second gas G2 is used to adjust the concentration of the mist M supplied to the film deposition chamber 10.
[0027] The location and configuration of the second gas supply pipe 31 and the second gas supply port 32 are not limited to the example shown in Figure 1. For example, the second gas supply port 32 is located in the part of the film deposition apparatus 100 excluding the atomizer 20. For example, the second gas supply port 32 is located downstream of the atomizer 20 in the direction of mist M supply.
[0028] In this example, the second gas G2 is treated as a concentration adjustment gas. That is, the second gas supply pipe 31 can be called a concentration adjustment gas supply pipe, and the second gas supply port 32 can be called a concentration adjustment gas supply port. It may also have uses other than concentration adjustment.
[0029] The first detection mechanism 40 detects parameters indicating the state of the mist M. For example, the first detection mechanism 40 is installed in the connecting pipe 30 and detects the parameters by measuring the mist M passing through the connecting pipe 30. These parameters can also be described as parameters of the optical properties of the mist. As an example, the first detection mechanism 40 is installed near the junction between the connecting pipe 30 and the film deposition chamber 10, but its installation location is not limited.
[0030] The first detection mechanism 40 detects parameters indicating the state of the mist M before it is supplied into the film deposition chamber 10. For example, the first detection mechanism 40 detects at least one of the concentration, temperature, or humidity of the mist M as the parameter. Note that the parameters indicating the state of the mist M are not limited to this example. In the example shown in Figure 1, the first detection mechanism 40 is a transmittance meter that detects the light shielding rate of the mist M passing through the connecting tube 30. In this example, the light shielding rate of the mist M is treated as indicating the concentration of the mist M, i.e., the proportion of film-forming components contained in the mist M. In addition to a transmittance meter, a turbidimeter can also be used as the first detection mechanism 40. Note that when the first detection mechanism 40 is a transmittance meter or a turbidimeter, the method for detecting the light shielding rate is not limited. For example, the light shielding rate may be detected using scattered light or transmitted light, or it may be detected using ultrasound or conductivity.
[0031] The control device 50, described later, controls the mist supply conditions. The mist supply conditions refer to the standards and targets set for the film deposition apparatus 100. For example, the control device 50 controls the amount of first gas G1 and second gas G2 supplied per unit time as mist supply conditions. The control device 50 changes the mist supply conditions according to parameters indicating the state of the mist M detected by the first detection mechanism 40.
[0032] The following describes a film formation method using the film formation apparatus 100. First, liquid D is placed in the internal container 21. In this embodiment, liquid D is a dispersion, but the type of dispersion medium used is not particularly limited, as long as the particles can be dispersed. For example, water, isopropyl alcohol (IPA), alcohols such as ethanol and methanol, acetone, dimethylformamide (DMF), dimethyl sulfosoxide (DMSO), ethyl acetate, acetic acid, tetrahydrofuran (THF), diethyl ether (DME), toluene, carbon tetrachloride, n-hexane, and mixtures thereof can be used as dispersion mediums. Among these, the dispersion medium preferably contains water, and more preferably is water, from the viewpoint of particle dispersibility and dielectric constant.
[0033] The type of particles is not particularly limited, but inorganic oxides are preferred. The inorganic oxides used for the particles are not particularly limited, but silicon dioxide, zirconium oxide, indium oxide, zinc oxide, tin oxide, titanium oxide, indium tin oxide (ITO), potassium tantalate, tantalum oxide, aluminum oxide, magnesium oxide, hafnium oxide, tungsten oxide, etc. It is even more preferable to use ITO particles. These may be used individually or in any combination of two or more types. The average particle size of the particles is not particularly limited, but specifically, it can be 1 nm to 10 μm. The particles may have a particle size of 10 μm or more. In addition to the dispersion medium and particles, dispersion D may contain surfactants, etc.
[0034] Next, the ultrasonic transducer 23 of the atomizer 20 is driven. The vibration of the ultrasonic transducer 23 is transmitted to the inner container 21 via the propagating liquid E, and further transmitted to the liquid D inside the inner container 21. Due to the vibration, the liquid D is atomized into mist M. Mist M is a gas-liquid mixture, for example, in which fine droplets are dispersed and suspended in a gas. The particle size of the particles contained in mist M is such that it can be transported by the first gas G1, for example, 10 μm or less.
[0035] The first gas G1 is supplied into the inner container 21 from the first gas supply pipe 25. The first gas G1 is not particularly limited, but a highly stable gas is desirable. For example, nitrogen, oxygen, air, helium, argon, xenon, or a combination thereof is preferred. The flow rate and velocity of the first gas G1 are controlled by the control device 50.
[0036] The generated mist M is transported together with the first gas G1 through the atomizer outlet 24 and the connecting pipe 30 in that order. The second gas G2 is supplied into the connecting pipe 30 from the second gas supply pipe 31. The second gas G2 is not particularly limited, but a highly stable gas is desirable. For example, nitrogen, oxygen, air, helium, argon, xenon, or a combination thereof is preferred. The flow rate and velocity of the second gas G2 are controlled by the control device 50. Near the second gas supply outlet 32, the first gas G1 and the second gas G2 merge, pass through the first detection mechanism 40 and the mist supply outlet 12 in that order, and are released into the outer container 11 of the film deposition chamber 10. A portion of the mist M stored in the film deposition chamber 10 comes into contact with the object S to be deposited, forming droplets, which then dry and form a film on the object S.
[0037] In this embodiment, the control device 50 changes the mist supply conditions according to parameters indicating the state of the mist M in order to improve film formation stability. For example, the control device 50 controls the mist supply conditions by changing the supply ratio of the first gas G1 and the second gas G2 according to the light shielding rate of the mist M detected by the first detection mechanism 40, so that the light shielding rate of the mist M is stable.
[0038] The greater the amount of first gas G1 supplied per unit time to the internal container 21 of the atomizer 20, the greater the amount of mist M that passes through the atomizer outlet 24. Also, the greater the amount of second gas G2 supplied per unit time, the greater the amount of gas that passes through the second gas supply port 32. In this embodiment, the gas containing mist M with film-forming components that passes through the atomizer outlet 24 and the gas that passes through the second gas supply port 32 have different proportions of film-forming components.
[0039] In this embodiment, the control device 50 controls the supply ratio of the first gas G1 and the second gas G2, thereby controlling the mist supply conditions by controlling the mixing ratio of multiple gases with different film-forming component content.
[0040] The following explanation will use an example where the gas passing through the second gas supply port 32 is a second gas G2 that does not contain film-forming components. However, the gas passing through the second gas supply port 32 may contain film-forming components. In that case, for example, the second gas supply pipe 31 may be connected to an atomizer (not shown), and the supply of the second gas G2 to the atomizer may cause mist to pass through the second gas supply port 32 and merge with the mist M that has passed through the atomizer outlet 24.
[0041] Figure 2 shows an example of a functional block of the control device 50 according to the first embodiment. The control device 50 comprises a control unit 51, a storage unit 52, an input unit 53, and an output unit 54. The control unit 51 comprehensively controls the entire control device 50 using a computing device such as a CPU (Central Processing Unit) and a GPU (Graphics Processing Unit), which are not shown. The control unit 51 executes processing according to a program recorded in memory and storage, which are not shown. In the control device 50, processing is executed by a processor that operates according to a program read from memory and storage.
[0042] The storage unit 52 stores information necessary for processing by the control unit 51. The input unit 53 receives information input to the control device 50 from other devices connected to the control device 50. For example, the input unit 53 acquires parameters indicating the state of the mist M detected by the first detection mechanism 40. The output unit 54 outputs information to other devices connected to the control device 50. For example, the output unit 54 outputs control signals for the first gas supply mechanism 61 that supplies the first gas G1 and the second gas supply mechanism 62 that supplies the second gas G2. The control device 50 may also have a communication unit (not shown) and may be connected to other devices via a network for input / output.
[0043] The control unit 51 includes a state parameter acquisition unit 511 and a mist supply condition management unit 512. The state parameter acquisition unit 511 acquires a parameter indicating the state of the mist M from the first detection mechanism 40 connected to the control device 50. In the present embodiment, the state parameter acquisition unit 511 acquires the light shielding rate of the mist M as the parameter. The mist supply condition management unit 512 controls the mist supply conditions. For example, the mist supply condition management unit 512 receives an input operation for setting a parameter indicating an appropriate state of the mist M and stores it in the storage unit 52 as mist setting information 521. The mist supply condition management unit 512 changes the mist supply conditions by comparing the parameter acquired by the state parameter acquisition unit 511 with the mist setting information 521.
[0044] In the present embodiment, the mist supply condition management unit 512 controls the supply ratio of the first gas G1 and the second gas G2. Even when the mist supply condition management unit 512 changes the supply ratio of the first gas G1 and the second gas G2, it controls so that the supply amount of the mist M per unit time does not change. For example, the mist supply condition management unit 512 treats the value obtained by summing the supply amount of the first gas G1 per unit time and the supply amount of the second gas G2 per unit time as the supply amount of the mist M per unit time.
[0045] For example, when the mist supply condition management unit 512 determines that the detected concentration of the mist M is lower than the mist setting information 521, it controls the first gas supply mechanism 61 to increase the supply amount of the first gas G1 or controls the second gas supply mechanism 62 to decrease the supply amount of the second gas G2. Thereby, the supply ratio of the first gas G1 and the second gas G2 is changed. Even in this case, the mist supply condition management unit 512 controls so that the supply amount of the mist M per unit time does not change.
[0046] Further, for example, when the mist supply condition management unit 512 determines that the detected concentration of the mist M is higher than the mist setting information 521, it controls the first gas supply mechanism 61 to decrease the supply amount of the first gas G1 or controls the second gas supply mechanism 62 to increase the supply amount of the second gas G2, thereby changing the supply ratio of the first gas G1 and the second gas G2. Even in this case, the mist supply condition management unit 512 controls so that the supply amount of the mist M per unit time does not change.
[0047] Incidentally, it can be said that the mist supply condition management unit 512 controls the mixing ratio of the gas containing the mist M containing the film-forming component and the gas not containing the film-forming component by the inflow amounts of the first gas G1 and the second gas G2.
[0048] As described above, in the present embodiment, the parameters indicating the state of the mist M are monitored, and the mist supply conditions are controlled so that the mist M having appropriate parameters is supplied to the film-forming chamber 10. With this configuration, the mist M suitable for film formation can be stably supplied to the film-forming chamber 10, contributing to the improvement of the film quality.
[0049] <First Embodiment: Modified Example 1>
[0050] Next, the film-forming apparatus 100 in the modified example 1 of the first embodiment will be described. The first detection mechanism 40 in this modified example has a transmission part 41. Hereinafter, the differences from the above-described embodiment will be described.
[0051] FIG. 3 is a schematic diagram showing an example (part 1) of the first detection mechanism 40 according to the modified example 1 of the first embodiment. The first detection mechanism 40 is installed in, for example, the connecting pipe 30, and includes a transmission part 41, a light-emitting part 42, and a light-receiving part 43. The transmission part 41 transmits light. The material of the transmission part 41 is not limited, and glass, resin materials (such as acrylic), ceramic materials, metals, etc. can be used. The transmission part 41 preferably uses a material with high transmittance according to the wavelength of the light used. Further, the transmission part 41 may be cooled. Further, the transmission part 41 may be made of a water-repellent or oil-repellent material in order to reduce material loss due to the adhesion of the mist M inside, or a water-repellent / oil-repellent treatment such as a water-repellent film / oil-repellent film may be applied to the transmission part 41.
[0052] The light-emitting unit 42 emits light. In this embodiment, the light-emitting unit 42 emits visible light, but the wavelength of the light emitted by the light-emitting unit 42 is not limited to the visible light region. The light-receiving unit 43 receives the light emitted by the light-emitting unit 42 that has passed through the light-transmitting unit 41. The first detection mechanism 40 detects a parameter indicating the light shielding rate by measuring the light that has passed through the light-transmitting unit 41. Arrow b1 in Figure 3 is an example of the direction of propagation of the light emitted by the light-emitting unit 42, and arrow a2 is an example of the direction of movement of the mist M passing through the connecting pipe 30.
[0053] The wavelength of light emitted by the light-emitting unit 42 can be appropriately determined according to the properties of the dispersion. For example, if the dispersion medium of the dispersion is water, it is preferable to use the visible light region (400 nm to 800 nm). If the concentration is low or the mist diameter is small, it is preferable to use light in the visible or infrared region. The appropriate wavelength of measurement light will differ depending on the absorption and scattering of light by the dispersion and the state of the dispersion (including the distribution of mist diameter, since it is a gas-liquid mixed mist state), so the wavelength can be set appropriately. It is preferable to prepare several wavelengths of measurement light and select a wavelength that can measure in the range of 0 to 100%.
[0054] In this modified example, the second gas supply port 32 supplies the second gas G2 to the permeate section 41. As an example, as shown in Figure 3, the second gas supply port 32 is positioned upstream of the permeate section 41 in the direction of mist movement of the connecting pipe 30 (direction of arrow a2). This causes the supplied second gas G2 to move toward the permeate section 41. Note that it is sufficient for the second gas G2 supplied from the second gas supply port 32 to move toward the permeate section 41, and the shape, position, number, and installation direction of the second gas supply pipe 31, the number and position of the second gas supply ports 32, etc., are not limited to the example shown in this figure.
[0055] By supplying the second gas G2 to the permeate section 41, it is possible to prevent mist M and film-forming components from adhering to the permeate section 41, or to remove any mist that does adhere. As a result, the parameter measurement accuracy of the first detection mechanism 40 can be improved. Furthermore, in order to stably suppress the adhesion of mist M and film-forming components to the permeate section 41, it is desirable that the supply amount of the second gas G2 per unit time be greater than the supply amount of the first gas G1 per unit time.
[0056] As in the example described above, the film deposition apparatus 100 in this modified example changes the supply ratio of the first gas G1 and the second gas G2 according to the parameters detected by the first detection mechanism 40. In this modified example, the control device 50 may control the supply ratio of the second gas G2 supplied to the permeate 41 and the first gas G1 as described above, or it may add the supply amount of the second gas G2 supplied from another second gas supply port 32 and the supply amount of the second gas G2 supplied to the permeate 41 and control the supply ratio with the first gas G1. The first detection mechanism 40 in this modified example can also be used in other embodiments and modifications.
[0057] In addition, in this modified example, the second gas G2 functions as both a concentration adjustment gas and an anti-fog gas. That is, the second gas supply pipe 31 functions as both a concentration adjustment gas supply pipe and an anti-fog gas supply pipe. The second gas supply port 32 functions as both a concentration adjustment gas supply port and an anti-fog gas supply port. Furthermore, after merging with the first gas, it also has the function of transporting mist M. It may also have uses other than concentration adjustment, anti-fog, and transport.
[0058] Figure 4 is a schematic diagram showing an example (part 2) of the first detection mechanism 40 according to modification 1 of the first embodiment. In the first detection mechanism 40 shown in this figure, a second gas G2 is supplied to a single permeable section 41 from a plurality of second gas supply ports 32. As shown in this figure, the second gas supply ports 32 may supply the second gas G2 from upstream and downstream of the permeable section 41 in the direction of the permeable section 41. As shown in Figure 4, the second gas supply pipe 31 may be arranged such that the line extending in the direction of travel of the supplied second gas G2 is not perpendicular to the mist movement direction (direction of arrow a2) and moves toward the permeable section 41. In addition, it is sufficient that the second gas G2 supplied from the second gas supply ports 32 moves toward the permeable section 41, and the shape, position, number, and installation direction of the second gas supply pipe 31, the number and position of the second gas supply ports 32, etc. are not limited to the example shown in this figure.
[0059] As shown in this figure, by supplying the second gas G2 from upstream and downstream in the mist movement direction (arrow a2 direction), it is possible to more efficiently prevent the mist M and film-forming components from adhering to the permeate 41, or to remove the mist M and film-forming components that do adhere.
[0060] <First Embodiment: Modification 2>
[0061] Next, a film deposition apparatus 100 in a modified example 2 of the first embodiment will be described. In this modified example, the first detection mechanism 40 has a recess 44. The differences from the above-described embodiment will be described below.
[0062] Figure 5 is a schematic diagram showing an example of a first detection mechanism 40 according to a modification 2 of the first embodiment. In this modification, the connecting tube 30 is provided with a plurality of recesses 44 facing each other. The recesses 44 are recessed toward the outside of the connecting tube 30 and have a transmissive portion 41 at the bottom. The light-emitting portion 42 emits light toward the light-receiving portion 43 so as to travel through a pair of recesses 44. Note that the recesses 44 of the first detection mechanism 40 are not limited to one pair, but may be provided in multiple pairs.
[0063] In this modified example, as in Modification Example 1, the second gas supply port 32 supplies the second gas G2 to the permeable section 41. The position of the second gas supply port 32 is not limited, but as shown in Figure 5, it may be arranged on the wall surface of the recess 44. Also, multiple second gas supply ports 32 may be arranged for one permeable section 41. The second gas G2 supplied from the second gas supply port 32 reaches the connecting pipe 30 via the recess 44 and merges with the mist M, thereby moving in the direction of movement of the mist M (a2).
[0064] By providing the recess 44, the permeable portion is positioned away from the path of the mist M, thus preventing the mist M and film-forming components from adhering to the permeable portion 41. Compared to the case without the recess 44, the amount of second gas G2 required to remove the mist from the permeable portion 41 can be reduced. As a result, unintended reductions in the concentration of mist M can be suppressed, and the parameter measurement accuracy of the first detection mechanism 40 can be improved.
[0065] Similar to Modification 1, the film deposition apparatus 100 in this modification changes the supply ratio of the first gas G1 and the second gas G2 according to the parameters detected by the first detection mechanism 40. In Modification 2, the control device 50 may also control the supply ratio of the second gas G2 supplied to the permeate 41 and the first gas G1 as described above, or it may add the supply amount of the second gas G2 supplied from another second gas supply port 32 and the supply amount of the second gas G2 supplied to the permeate 41 and control the supply ratio with the first gas G1. The first detection mechanism 40 in this modification can also be used in other embodiments and modifications.
[0066] In addition, in this modified example, the second gas G2 functions as both a concentration adjustment gas and an anti-fog gas. That is, the second gas supply pipe 31 functions as both a concentration adjustment gas supply pipe and an anti-fog gas supply pipe. The second gas supply port 32 functions as both a concentration adjustment gas supply port and an anti-fog gas supply port. Furthermore, after merging with the first gas, it also has the function of transporting mist M. It may also have uses other than concentration adjustment, anti-fog, and transport.
[0067] <First Embodiment: Modification 3>
[0068] Next, a film deposition apparatus 100 in a modified example 3 of the first embodiment will be described. In this modified example, the first detection mechanism 40 of the film deposition apparatus 100 is a thermometer placed inside the internal container 21 of the film deposition chamber 10. The differences from the above-described embodiment will be explained below.
[0069] Figure 6 is a schematic diagram showing an example of a film deposition apparatus 100 according to modification 3 of the first embodiment. In this modification, the first detection mechanism 40 is located inside the outer container 11 and detects the temperature of the film deposition chamber 10 as a parameter indicating the state of the mist M. The control device 50 controls the supply ratio of the first gas G1 and the second gas G2 according to the temperature of the film deposition chamber 10. The first detection mechanism 40 only needs to be able to detect the temperature of the mist M, and its location is not limited to inside the film deposition chamber 10. For example, the first detection mechanism 40 may measure the temperature inside the connecting tube 30.
[0070] For example, the control device 50 receives mist setting information 521, which includes a preferred temperature setting and information regarding the comparison between the temperature of the mist M from the atomizer 20 and the room temperature. When the mist M is higher than the room temperature, if the first detection mechanism 40 detects a parameter indicating that the inside of the film deposition chamber 10 is at a higher temperature than preferred, it means that there is more mist M than preferred, which has the effect of raising the temperature inside the film deposition chamber 10, and the concentration of mist M is higher than preferred. The mist supply condition management unit 512 controls at least one of the first gas supply mechanism 61 or the second gas supply mechanism 62 so that the concentration of mist M becomes lower. That is, the control device 50 controls the ratio of the second gas G2 to the first gas G1 to increase. As a result, the ratio of the first gas G1, which contains a lot of mist M, decreases, the concentration of mist M can be lowered, and the concentration of mist M can be brought into the preferred range.
[0071] Furthermore, if the mist M is below room temperature, and the first detection mechanism 40 detects a parameter indicating that the inside of the film deposition chamber 10 is at a temperature higher than the preferred temperature, it means that there is less mist M present than the preferred range, which has the effect of lowering the temperature inside the film deposition chamber 10, and therefore the concentration of mist M is lower than the preferred range. The mist supply condition management unit 512 controls at least one of the first gas supply mechanism 61 or the second gas supply mechanism 62 to increase the concentration of mist M. That is, the control device 50 controls the ratio of the first gas G1 to the second gas G2 to increase. As a result, by increasing the ratio of the first gas G1, which contains a lot of mist M, the concentration of mist M can be increased, and the concentration of mist M can be brought into the preferred range.
[0072] As described above, according to this modified example, by measuring the temperature of the mist M, it is possible to control the supply of mist M under appropriate mist supply conditions, and a high-quality film can be efficiently obtained. The configuration of this modified example can also be used in other embodiments and modifications. For example, the first detection mechanism 40 in this modified example may have a permeable section 41, and the concentration of mist M may be detected using the permeable section 41.
[0073] <First Embodiment: Modification 4>
[0074] Next, a film deposition apparatus 100 in a modified example 4 of the first embodiment will be described. In this modified example, the first detection mechanism 40 of the film deposition apparatus 100 is a hygrometer placed in the film deposition chamber 10. The differences from the above-described embodiment will be explained below.
[0075] In this modified example, the first detection mechanism 40 is located inside the outer container 11 and detects the humidity of the film deposition chamber 10 as a parameter indicating the state of the mist M. The control device 50 controls the supply ratio of the first gas G1 and the second gas G2 according to the humidity of the film deposition chamber 10. The first detection mechanism 40 only needs to be capable of detecting the humidity of the mist M, and its location is not limited to inside the film deposition chamber 10. For example, the first detection mechanism 40 may measure the humidity inside the connecting tube 30.
[0076] For example, the control device 50 receives mist setting information 521, which includes the setting of a preferred humidity and information regarding a comparison of the humidity of the first gas G1 and the second gas G2. If the humidity of the mist M is higher than the preferred humidity, and the humidity of the first gas G1 is higher than the humidity of the second gas G2, the mist supply condition management unit 512 controls at least one of the first gas supply mechanism 61 or the second gas supply mechanism 62 so that the humidity of the mist M decreases. That is, the control device 50 controls the system so that the ratio of the second gas G2 to the first gas G1 increases.
[0077] As described above, according to this modified example, by measuring the humidity of the mist M, it is possible to control the supply of mist M under appropriate mist supply conditions, thereby efficiently obtaining a high-quality film. The configuration in this modified example can also be used in other embodiments and modifications.
[0078] <Second Embodiment>
[0079] Next, the film deposition apparatus 200 in the second embodiment will be described. In this embodiment, the control mechanism of the film deposition apparatus 200 changes the mist supply conditions by changing the settings of the ultrasonic transducer 23. The differences from the above-described embodiment will be explained below.
[0080] Figure 7 is a schematic diagram showing an example of a film deposition apparatus 200 according to the second embodiment. The film deposition apparatus 200 shown in this figure does not have a second gas supply pipe 31 and a second gas supply port 32.
[0081] Figure 8 shows an example of a functional block of the control device 50 according to the second embodiment. The output unit 54 of the control device 50 is connected to the ultrasonic transducer 23 instead of the first gas supply mechanism 61 and the second gas supply mechanism 62. The mist supply condition setting unit controls the driving conditions of the ultrasonic transducer 23 according to the parameters indicating the state of the mist M acquired by the state parameter acquisition unit 511 as control of the mist supply conditions.
[0082] For example, if the state parameter acquisition unit 511 determines that the concentration of mist M acquired using the first detection mechanism 40 is lower than the mist setting information 521, the mist supply condition management unit 512 increases the voltage of the ultrasonic transducer 23 to increase the concentration of mist M generated in the atomizer 20. If the state parameter acquisition unit 511 determines that the concentration of mist M acquired using the first detection mechanism 40 is higher than the mist setting information 521, the mist supply condition management unit 512 decreases the voltage of the ultrasonic transducer 23 to decrease the concentration of mist M generated in the atomizer 20.
[0083] In the example shown in Figure 7, the first detection mechanism 40 is located in the connecting pipe 30, but the first detection mechanism 40 may be located in a part other than the connecting pipe 30. Similar to the example shown in Figure 6, the first detection mechanism 40 may be located in the film formation chamber 10 or in the atomizer 20. Furthermore, the parameters indicating the state of the mist M detected by the first detection mechanism 40 are not limited to the concentration of the mist M, but may be, for example, the temperature or humidity of the mist M. That is, the first detection mechanism 40 may be a thermometer or a hygrometer.
[0084] As described above, according to this embodiment, the mist M can be stably supplied to the film deposition chamber 10 by controlling the ultrasonic transducer 23, contributing to the improvement of film quality. The configuration in this modified example can also be used in other embodiments and modifications.
[0085] <Third Embodiment>
[0086] Next, the film deposition apparatus 300 in the third embodiment will be described. In this embodiment, the control mechanism of the film deposition apparatus 300 changes the mist supply conditions by controlling the amount of liquid D contained in the atomizer 20. The differences from the above-described embodiments will be explained below.
[0087] Figure 9 is a schematic diagram showing an example of a film deposition apparatus 300 according to the third embodiment. The film deposition apparatus 300 shown in this figure has a film deposition chamber 10, an atomizer 20, and a liquid storage chamber 70. The liquid storage chamber 70 contains the liquid D supplied to the atomizer 20.
[0088] The liquid storage chamber 70 comprises an inner container 71, an outer container 72, an ultrasonic transducer 73, a liquid supply pipe 74, and a liquid supply mechanism 75. The inner container 71 is a container for storing liquid D. The inner container 71 may have a lid. Liquid D is the same as the liquid D stored in the inner container 21 of the atomizer 20, and is, for example, a dispersion in which particles containing film-forming components are dispersed in a dispersion medium. The outer container 72 is a container for storing the propagating liquid E in addition to the inner container 71 and the ultrasonic transducer 73. The outer container 72 has a wall that separates the inside and outside of the liquid storage chamber 70, and may have a lid.
[0089] The ultrasonic transducer 73 generates vibrations, which are then transmitted to the liquid D contained in the liquid chamber 70. The vibrations generated by the ultrasonic transducer 73 are transmitted to the liquid D in the inner container 71 by the propagating liquid E. The installation location of the ultrasonic transducer 73 is not limited; any structure that allows the vibrations of the ultrasonic transducer 73 to be transmitted to the liquid D is acceptable. When the vibrations of the ultrasonic transducer 73 are transmitted to the liquid D, the liquid chamber 70 does not need to have an outer container 72 and a propagating liquid E. In addition, any transducer that generates mist M can be used as the ultrasonic transducer 73, and it may not even be an ultrasonic transducer. The frequency of the ultrasonic transducer 73 can be set as appropriate, for example, from 100 Hz to 1,000,000 kHz. The output of the ultrasonic transducer 73 can be from 10 W to 200 W.
[0090] The liquid supply pipe 74 is a pipe that supplies liquid D to the atomizer 20 and a pipe that recovers liquid D from the atomizer 20. As shown in Figure 9, the liquid storage chamber 70 may have at least two pipes, one for supplying liquid D to the atomizer 20 and one for recovering liquid D from the atomizer 20, or one liquid supply pipe 74 may be used for both supplying and recovering liquid D. The liquid supply mechanism 75 is a mechanism that supplies liquid D from the liquid storage chamber 70 to the atomizer 20 and a mechanism that supplies liquid D from the atomizer 20 to the liquid storage chamber 70. For example, the liquid supply mechanism 75 supplies a desired amount of liquid D using a pump under the control of the control device 50.
[0091] As the amount of liquid D contained in the internal container 21 of the atomizer 20 decreases, the propagation speed of ultrasonic waves in the liquid D increases, which increases the amount of atomization and affects the concentration of mist M. Therefore, the liquid supply mechanism 75 supplies liquid D to the atomizer 20 to increase the amount of liquid D contained in the atomizer 20. On the other hand, if there is a large amount of liquid D contained in the internal container 21, the concentration of mist M will decrease, so it is possible to control the concentration of mist M by recovering liquid D from the atomizer 20 into the liquid storage chamber 70. As mist M is generated in the atomizer 20, the amount of liquid D contained in the internal container 21 gradually decreases, so the liquid storage chamber 70 does not need to recover liquid D from the atomizer 20 into the liquid storage chamber 70, although it does supply liquid D to the atomizer 20. In other words, the liquid storage chamber 70 does not need to have a liquid supply pipe 74 and a liquid supply mechanism 75 to recover liquid D from the atomizer 20.
[0092] Figure 10 shows an example of a functional block of the control device 50 according to the third embodiment. The output unit 54 of the control device 50 is connected to the liquid supply mechanism 75. The mist supply condition setting unit controls the amount of liquid D contained in the atomizer 20 according to the parameters indicating the state of the mist M acquired by the state parameter acquisition unit 511.
[0093] For example, if the state parameter acquisition unit 511 determines that the concentration of mist M acquired using the first detection mechanism 40 is lower than the mist setting information 521, the mist supply condition management unit 512 reduces the amount of liquid D contained in the atomizer 20 and increases the amount of mist M by recovering the liquid D contained in the atomizer 20 into the liquid storage chamber 70. If the state parameter acquisition unit 511 determines that the concentration of mist M acquired using the first detection mechanism 40 is higher than the mist setting information 521, the mist supply condition management unit 512 increases the amount of liquid D contained in the atomizer 20 and decreases the amount of mist M by supplying the liquid D contained in the liquid storage chamber 70 to the atomizer 20.
[0094] When the ultrasonic transducer 23 is operating in the atomizer 20, if unvibrated liquid D is supplied from the liquid storage chamber 70, the amount of atomization at the time of supply decreases compared to when vibrated liquid D is supplied, due to the dissolved oxygen concentration of liquid D, which affects the concentration of mist M. By applying vibration to liquid D in the liquid storage chamber 70 using the ultrasonic transducer 73, bringing it closer to the state of liquid D contained in the atomizer 20, mist M can be stably supplied to the film formation chamber 10.
[0095] In the example shown in Figure 9, the first detection mechanism 40 is located in the connecting pipe 30, but the first detection mechanism 40 may be located in a part other than the connecting pipe 30. Similar to the example shown in Figure 6, the first detection mechanism 40 may be located in the film deposition chamber 10 or in the atomizer 20. Furthermore, the parameters indicating the state of the mist M detected by the first detection mechanism 40 are not limited to the concentration of the mist M, but may be, for example, the temperature or humidity of the mist M. In other words, the first detection mechanism 40 may be a thermometer or a hygrometer.
[0096] As described above, according to this embodiment, by controlling the amount of liquid D contained in the atomizer 20, the mist M can be stably supplied to the film deposition chamber 10, contributing to an improvement in film quality. The configuration in this modified example can also be used in other embodiments and modifications.
[0097] <Third Embodiment: Modification 1>
[0098] Next, a film-forming apparatus 300 in a modified example 1 of the third embodiment will be described. The atomizer 20 in this embodiment has a second detection mechanism 27. The differences from the above-described embodiment will be explained below.
[0099] Figure 11 is a schematic diagram showing an example of an atomizer 20 according to Modification 1 of the third embodiment. In this figure, the external container 22 and the ultrasonic transducer 23 are omitted from the illustration. The atomizer 20 in this modification has a second detection mechanism 27 and a spacer 28.
[0100] The second detection mechanism 27 detects the amount of liquid D contained in the internal container 21 of the atomizer 20. For example, the second detection mechanism 27 is an ultrasonic sensor that emits ultrasonic waves from a sensor head toward the liquid surface and receives the ultrasonic waves reflected from the liquid surface again with the sensor head to measure the distance to the liquid surface. The change in the amount of liquid D can be determined from the change in the distance to the liquid surface. The configuration of the second detection mechanism 27 is not limited to this, as long as it can detect the amount of liquid D. For example, the second detection mechanism 27 may detect the amount of liquid D contained in the internal container 21 of the atomizer 20 by measuring the weight of the container.
[0101] The spacer 28 is a component provided between the second detection mechanism 27 and the liquid surface. The spacer 28 is connected to or inserted through the top surface or lid material of the inner container 21. For example, as shown in Figure 11, the spacer 28 is a cylindrical component that houses at least a part of the second detection mechanism 27. That is, the spacer 28 has an open end facing the inner container 21, and the second detection mechanism 27 is installed at the other end.
[0102] The material of the spacer 28 can be metal, resin, etc., but is not particularly limited. In addition, to reduce material loss due to mist M adhering to the inside of the spacer 28, a water-repellent and oil-repellent material may be used, or a water-repellent and oil-repellent treatment such as a water-repellent film or oil-repellent film may be applied to the inside of the spacer 28. Furthermore, a cylindrical member obtained by winding a tape-like member made of resin may be used as the spacer 28.
[0103] For example, the distance T from one end of the second detection mechanism 27 facing the internal container 21 to the other end of the spacer 28 facing the internal container 21 is preferably 50 mm or more, more preferably 75 mm or more, and even more preferably 100 mm or more. Furthermore, the distance T is preferably 1000 mm or less, more preferably 500 mm or less, and even more preferably 200 mm or less.
[0104] For example, the inner diameter of the spacer 28 is designed to be slightly larger than the diameter of the second detection mechanism 27, and has a shape that allows a part of the second detection mechanism 27 to fit into it. The cross-sectional shape of the spacer 28 may be circular or polygonal, and is configured so that the second detection mechanism 27 fits properly.
[0105] As described above, by providing the spacer 28, even when using an internal container 21 with height constraints, the desired distance from the second detection mechanism 27 to the liquid surface can be secured. This prevents water droplets from adhering to the second detection mechanism 27 even when the liquid surface becomes turbulent due to the driving of the ultrasonic transducer 23. The configuration in this modified example can also be used in other embodiments and modifications.
[0106] <Third Embodiment: Modification 2>
[0107] Next, a film deposition apparatus 300 in a modified example 2 of the third embodiment will be described. In this embodiment, the first gas supply pipe 25 has a third gas supply port 251 in addition to the first gas supply port 26. The differences from the above-described embodiment will be explained below.
[0108] Figure 12 is a schematic diagram showing an example of an atomizer 20 according to a modification 2 of the third embodiment. Similar to Figure 11, this figure omits the illustration of the outer container 22 and the ultrasonic transducer 23. The third gas supply port 251 of the first gas supply pipe 25 supplies the first gas G1 to the second detection mechanism 27. More specifically, the third gas supply port 251 is an opening provided on the wall surface of the first gas supply pipe 25 on the side facing the second detection mechanism 27. Note that the first gas supply pipe 25 may be connected to a pipe extending in the direction of the second detection mechanism 27. In that case, one end of the pipe on the second detection mechanism 27 side functions as the third gas supply port 251.
[0109] As shown in Figure 12, the atomizer 20 may or may not have a spacer 28. If the atomizer 20 has a spacer 28, the third gas supply port 251 can eject the first gas G1 toward one end of the spacer 28 facing the inner container 21.
[0110] When the first gas supply mechanism 61 sends the first gas G1 into the first gas supply pipe 25, the first gas G1 is supplied to the internal container 21 from the first gas supply port 26 and the third gas supply port 251. When controlling the supply ratio of the first gas G1 and the second gas G2 according to a parameter indicating the state of the mist M, the control device 50 controls the amount of first gas G1 supplied to the atomizer 20 from the first gas supply port 26 and the third gas supply port 251.
[0111] As described above, with this modified configuration, the first gas G1 is ejected toward the second detection mechanism 27, thus preventing water droplets from adhering to the second detection device. This configuration is expected to improve the detection performance of the second detection device and contribute to the stabilization of the film quality. The configuration in this modified configuration can also be used in other embodiments and modifications.
[0112] <Third Embodiment: Modification 3>
[0113] Next, a film deposition apparatus 300 in a modified example 3 of the third embodiment will be described. In this embodiment, the first gas supply pipe 25 has a spacer 28, and a shielding member 281 is installed inside the spacer 28. The differences from the above-described embodiment will be explained below.
[0114] Figure 13 is a schematic diagram showing an example of an atomizer 20 according to modification 3 of the third embodiment. Similar to Figure 11, this figure omits the illustration of the outer container 22 and the ultrasonic transducer 23. The shielding member 281 of the spacer 28 is openable and closable. When the shielding member 281 is closed, it is positioned between the second detection mechanism 27 and the liquid surface of liquid D, protecting the second detection mechanism 27 from water droplets splashing up from the liquid surface.
[0115] The state parameter acquisition unit 511 of the control device 50 opens the shielding member 281 when the second detection mechanism 27 starts detecting the amount of liquid D. When detection is completed, the state parameter acquisition unit 511 closes the shielding member 281. This prevents water droplets from adhering to the second detection mechanism 27 and allows for the formation of a film with stable performance. The configuration in this modified example can also be used in other embodiments and modifications.
[0116] <Fourth Embodiment>
[0117] Next, a film deposition apparatus in the fourth embodiment will be described. The control mechanism of the film deposition apparatus in this embodiment changes the mist supply conditions by controlling the supply amount of the first gas G1. The differences from the embodiments described above will be explained below. The configuration of the film deposition apparatus may be the same as the film deposition apparatus 100 of the first embodiment shown in Figure 1 or Figure 6, the same as the film deposition apparatus 200 of the second embodiment shown in Figure 7, or the same as the film deposition apparatus 300 of the third embodiment shown in Figure 9.
[0118] The control device 50 changes the supply amount of the first gas G1 by controlling the first gas supply mechanism 61 according to parameters indicating the state of the mist M. The method for controlling the supply amount of the first gas G1 in relation to the parameters can be an appropriate method obtained according to the experiment. The control device 50 may also control the supply amount of the first gas G1 using parameters obtained at different timings. For example, if the difference in the concentration of mist M obtained at different timings is greater than or equal to a predetermined value, the control device 50 can reduce the supply amount of the first gas G1 in order to stabilize the concentration of mist M. In this embodiment, the parameters may be the concentration of mist M, temperature, or humidity.
[0119] As described above, with this embodiment, the supply amount of the first gas G1 is changed according to the state of the mist M, and a mist M suitable for film formation can be stably supplied to the film formation chamber 10, which is expected to improve the quality of the film.
[0120] The present invention will be described in more detail below with reference to examples and comparative examples, but the present invention is not limited in any way by the following examples.
[0121] <Example 1>
[0122] In this embodiment, the water level in the atomizer 20 was measured using the film deposition apparatus 100 shown in Figure 1. First, water was placed in the inner container 21 as liquid D. The distance from the bottom surface inside the inner container 21 to the liquid surface, i.e., the water level, was 75 mm. The ultrasonic transducer 23 was started to operate, and when the water level in the inner container 21 reached 40 mm, the supply of the first gas G1 from the first gas supply pipe 25 was started. The water level from the bottom of the inner container 21 to the liquid surface was measured using a Keyence FW-H02. The resolution of the Keyence FW-H02 was 2 mm.
[0123] Figure 14 is a graph plotting the water level over time in Example 1. In this example, it was found that the water level decreased at approximately 0.0055 mm / s, or 0.33 mm / min. Therefore, it was found that the atomizer 20 in this example causes the water level in the internal container 21 to decrease over time.
[0124] <Example 2>
[0125] In this embodiment, mist M was supplied from the atomizer 20 to the film deposition chamber 10 using the film deposition apparatus 100 shown in Figure 1. First, a dispersion D was prepared. ITO (indium tin oxide) particles with an average particle diameter of 30 nm were used, and water was used as the dispersion medium to produce a dispersion D with a particle concentration of 3 wt / %. The produced dispersion D was stored in the internal container 21 of the atomizer 20.
[0126] Next, the ultrasonic transducer 23 was driven at 1.6 MHz and 230 W output. 300 seconds after the start of operation of the ultrasonic transducer 23, the control device 50 supplied the first gas G1 from the first gas supply pipe 25 to the internal container 21 at a flow rate of 2 L / min. Dry air was used for the first gas G1. Simultaneously with the start of supplying the first gas G1, the control device 50 supplied the second gas G2 from the second gas supply pipe 31 to the connecting pipe 30 at a flow rate of 6 L / min. Dry air was used for the second gas G2. Note that the second gas G2 does not contain film-forming components such as ITO particles.
[0127] 300 seconds after the start of supplying the first gas G1 and the second gas G2, the first detection mechanism 40 began measuring the light shielding rate. The control device 50 controlled the supply ratio of the first gas G1 and the second gas G2 so that the detection result of the first detection mechanism 40 would result in a light shielding rate of 50%. Seven seconds after the start of the supply ratio control, the control device 50 received an input to stop the supply ratio control. After another five seconds, the control device 50 received an input to restart the supply ratio control.
[0128] Figure 15 is a graph showing the measurement results of Example 2. It was found that the light-shielding rate decreased and the concentration of mist M became thinner during the period when the control device 50 stopped controlling the supply ratio. Therefore, it was found that a mist M with a stable light-shielding rate can be obtained by controlling the supply ratio of the first gas G1 and the second gas G2 by the control device 50.
[0129] <Example 3>
[0130] Using the same apparatus as in Example 2, mist M was supplied from the atomizer 20 to the film deposition chamber 10. The conditions for generating and supplying mist M were the same as in Example 2. The control device 50 controlled the voltage of the ultrasonic transducer 23 so that the detection result of the first detection mechanism 40 was a light shielding rate of 50%. Six seconds after the control of the supply ratio, the control device 50 was instructed to stop controlling the voltage of the ultrasonic transducer 23. After another 10 seconds, the control device 50 was instructed to restart controlling the voltage of the ultrasonic transducer 23.
[0131] Figure 16 is a graph showing the measurement results of Example 3. It was found that the light shielding rate decreased and the concentration of mist M became thinner during the period when the control device 50 stopped controlling the voltage of the ultrasonic transducer 23. Therefore, it was found that a mist M with a stable light shielding rate can be obtained by controlling the voltage of the ultrasonic transducer 23 by the control device 50. <Example 4>
[0132] In this embodiment, mist M was supplied from the atomizer 20 to the film deposition chamber 10 using the film deposition apparatus 300 shown in Figure 9. The generation conditions and supply conditions for mist M were the same as in Embodiment 2. The control device 50 controlled the amount of liquid D in the atomizer 20 so that the detection result of the first detection mechanism 40 was a light shielding rate of 10%. After 10 seconds had elapsed since the control of the supply ratio, the control device 50 was instructed to stop controlling the amount of liquid D. After another 10 seconds had elapsed, the control device 50 was instructed to restart controlling the amount of liquid D.
[0133] Figure 17 is a graph showing the measurement results of Example 4. It was found that the light-shielding rate increased and the concentration of mist M became higher during the period when the control device 50 stopped controlling the amount of liquid D. Therefore, it was found that a mist M with a stable light-shielding rate can be obtained by controlling the amount of liquid D in the atomizer 20 by the control device 50.
[0134] <Fifth Embodiment>
[0135] Next, the film deposition apparatus 100 in the fifth embodiment will be described. The first detection mechanism 40 in this embodiment has a holding portion 33. The differences from the embodiments described above will be explained below.
[0136] Figure 18 is a schematic diagram showing an example (part 1) of the first detection mechanism 40 according to the fifth embodiment. Similar to the first embodiment's modified examples 1 and 2, the first detection mechanism 40 is installed, for example, in a connecting pipe 30 and comprises a transmissive part 41, a light-emitting part 42, and a light-receiving part 43. Furthermore, the first detection mechanism 40 has a holding part 33 that holds the transmissive part 41. The holding part 33 is provided in at least one of the atomizer 20, the flow path of the mist M from the atomizer 20 to the film-forming chamber 10, and the film-forming chamber 10. The following description will use an example in which the holding part 33 is provided in the connecting pipe 30.
[0137] The holding portion 33 is a hollow columnar body, with one end in contact with either the atomizer 20, the connecting pipe 30, or the film deposition chamber 10, and the other end in contact with the permeable portion 41. In the holding portion 33 shown in Figure 18, the opening area on the connecting pipe 30 side on which the holding portion 33 is provided is approximately equal to the opening area on the permeable portion 41 side. In other words, in this example, the holding portion 33 has an opening area on at least one of the following sides: the atomizer 20 on which the holding portion 33 is provided, the mist M flow path from the atomizer 20 to the film deposition chamber 10, and the film deposition chamber 10, and the opening area on the permeable portion 41 side is approximately equal to the opening area on the permeable portion 41 side. The opening area can be appropriately changed depending on the size of the first detection mechanism 40, etc., and is not particularly limited. The material of the holding portion 33 is not limited, as long as it can hold the permeable portion 41 in the atomizer 20, the connecting pipe 30, or the film deposition chamber 10.
[0138] One or more second gas supply pipes 31 are connected to the holding section 33. One end of the second gas supply pipe 31 on the holding section 33 side is open and functions as a second gas supply port 32. The second gas supply port 32 is located on the inside side of the permeate section 41, between the atomizer 20 in which the permeate section 41 is installed, the connecting pipe 30 which is the flow path for the mist M, and the film formation chamber 10, i.e., on the side where the mist M is contained. The second gas supply port 32 supplies a second gas G2, which is an anti-fogging gas that suppresses the adhesion of mist M to the permeate section 41, to the permeate section 41. The second gas G2 functions as an anti-fogging gas and also functions as a concentration adjustment gas. It may also have other uses.
[0139] The shape of the second gas supply port 32 is not limited to a circle. For example, it may be slit-shaped, and configured to supply the second gas G2 to the permeable section 41 in a strip-like manner. By configuring the second gas supply port 32 as a slit shape, the second gas G2 can be supplied to the permeable section 41 with force, resulting in high anti-fogging efficiency.
[0140] The permeable section 41 may have a flat portion on the side where the mist M is contained. In that case, the second gas supply port 32 may supply the second gas in a direction parallel to the plane of the permeable section 41. By supplying the second gas G2 parallel to the permeable section 41, it is possible to suppress the adhesion of excess components such as impurities contained in the second gas G2 to the permeable section 41 or their accumulation in the vicinity of the permeable section 41.
[0141] In addition, the example shown in Figure 18 is a top view of the first detection mechanism 40 of the film deposition apparatus 100 shown in Figure 1, where the connecting tube 30 extends horizontally, and the light traveling from the light-emitting section 42 to the light-receiving section 43 travels horizontally and perpendicular to the direction of extension of the connecting tube 30. As a result, the plane of the transmissive section 41 extends in the vertical direction. However, the direction of extension of the connecting tube 30, the direction of travel of the light traveling from the light-emitting section 42 to the light-receiving section 43, and the direction of extension of the plane of the transmissive section 41 are not limited to the example shown in this figure.
[0142] Figure 19A is a schematic diagram showing an example (part 2) of the first detection mechanism 40 according to the fifth embodiment, and Figure 19B is a schematic diagram showing an example (part 3) of the first detection mechanism 40 according to the fifth embodiment. In the holding portion 33 shown in Figures 19A and 19B, the opening area on at least one side of the atomizer 20 on which the holding portion 33 is provided, the flow path of the mist M from the atomizer 20 to the film deposition chamber 10, and the film deposition chamber 10 is smaller than the opening area on the side of the permeable portion 41.
[0143] The holding portion 33 shown in Figure 19A is configured such that the opening area gradually decreases from the side of the transmissive portion 41 toward the side of the connecting tube 30. The opening area is the area of the cross-section when the holding portion 33 is cut in a direction perpendicular to the direction of light propagation from the light-emitting portion 42 toward the light-receiving portion 43.
[0144] The retaining portion 33 shown in Figure 19B has a tapered shape, such that the opening area gradually decreases from the side of the permeable portion 41 toward the side of the connecting pipe 30. As shown in Figures 19A and 19B, by making the opening area on the side of the connecting pipe 30 smaller than the opening area on the side of the permeable portion 41, it is possible to suppress the flow of mist M traveling through the connecting pipe 30 into the interior of the retaining portion 33. As a result, it is possible to prevent mist M from adhering to the surface of the permeable portion 41.
[0145] Next, in the fifth embodiment, the direction of travel of the second gas G2 supplied from the second gas supply port 32 to the permeate 41 will be described.
[0146] Figure 20A is a diagram (part 1) illustrating the supply direction of the second gas G2 from the second gas supply port 32 in the fifth embodiment. Figure 20B is a diagram (part 2) illustrating the supply direction of the second gas G2 from the second gas supply port 32 in the fifth embodiment. Figure 20C is a diagram (part 3) illustrating the supply direction of the second gas G2 from the second gas supply port 32 in the fifth embodiment. Figure 20D is a diagram (part 4) illustrating the supply direction of the second gas G2 from the second gas supply port 32 in the fifth embodiment. Figure 20E is a diagram (part 5) illustrating the supply direction of the second gas G2 from the second gas supply port 32 in the fifth embodiment.
[0147] Figures 20A to 20E show a cross-section of the holding portion 33 in a direction perpendicular to the direction of light propagation (X direction) from the light-emitting portion 42 to the light-receiving portion 43, when viewed from inside the connecting tube 30 shown in Figure 18, in the direction of the transmissive portion 41. In Figures 20A to 20E, the holding portion 33 and the transmissive portion 41 are circular, but the shape of the holding portion 33 and the transmissive portion 41 is not limited to a circular shape. Furthermore, the configuration shown in Figures 20A to 20E may also be used in the first detection mechanism 40 shown in Figures 19A and 19B.
[0148] As shown in Figures 20A to 20E, the supply direction of the second gas G2 is determined according to the direction connecting a position in the second gas supply pipe 31 that is a predetermined distance away from the second gas supply port 32 along its axis, and the second gas supply port 32.
[0149] In the example shown in Figure 20A, four second gas supply ports 32 are provided for one permeable section 41. Of the multiple second gas supply ports 32 provided for one permeable section 41, at least two second gas supply ports 32 supply the second gas G2 in different directions. In the example shown in this figure, four second gas supply ports 32 are shown, with the second gas G2 supplied to the right from one pair of second gas supply ports 32 and the second gas G2 supplied to the left from the other pair of second gas supply ports 32.
[0150] In the example shown in Figure 20B, four second gas supply ports 32 are provided for one permeable section 41. Each of the multiple second gas supply ports 32 provided for one permeable section 41 supplies the second gas G2 in a different direction. In the example shown in this figure, each second gas supply port 32 supplies the second gas G2 in the direction of the centroid of the permeable section 41.
[0151] In the example shown in Figure 20C, four second gas supply ports 32 are provided for one permeable section 41, and each of the second gas supply ports 32 supplies the second gas G2 in a different direction. The second gas supply pipe 31 is connected to the holding section 33 so that the second gas G2 supplied from the multiple second gas supply ports 32 swirls.
[0152] In addition, the second gas G2 may settle at the bottom due to gravity, for example, inside the holding section 33. To suppress the accumulation of the second gas G2, the first detection mechanism 40 may be configured such that the amount of second gas G2 supplied per unit time to the lower side in the direction of gravity is greater than the amount of second gas G2 supplied to the upper side.
[0153] In the example shown in Figure 20D, the second gas supply port 32 is connected to the holding portion 33 asymmetrically in the vertical direction in a cross-sectional view of the holding portion 33. The second gas supply port 32 is connected to the holding portion 33 so as to be biased downward. With this configuration, the amount of second gas G2 supplied per unit time to the lower side is greater than the amount of second gas G2 supplied to the upper side.
[0154] In the example shown in Figure 20E, the second gas supply pipe 31 located on the lower side in the direction of gravity has a wider shape than the second gas supply pipe 31 located on the upper side. In this configuration as well, the amount of second gas G2 supplied per unit time to the lower side is greater than the amount of second gas G2 supplied to the upper side.
[0155] The mist supply condition management unit 512 may also control the amount of second gas G2 supplied to each of the multiple second gas supply pipes 31 provided for one permeable section 41. For example, the mist supply condition management unit 512 may control the amount of second gas G2 supplied to the second gas supply port 32 located on the lower side in the direction of gravity so that the amount supplied per unit time from the second gas supply port 32 located on the upper side is greater than the amount supplied from the second gas supply port 32 located on the upper side.
[0156] In addition, the amount of second gas G2 that settles in the holding section 33, etc., may increase as time passes after the start of supplying the second gas G2. The mist supply condition management unit 512 may vary the amount of second gas G2 supplied from at least two second gas supply ports 32 provided for one permeable section 41 over time. Specifically, the mist supply condition management unit 512 may set the supply conditions for the second gas G2 such that the amount of second gas G2 supplied from the lower second gas supply port 32 gradually increases compared to the amount supplied from the upper second gas supply port 32.
[0157] The first detection mechanism 40 has at least one pair of transmissive parts 41, one located on the side of the light-emitting part 42 and the other located on the side of the light-receiving part 43. In the above example, since light travels horizontally from the light-emitting part 42 to the light-receiving part 43, the vertical installation positions, i.e., the installation heights, of the pair of transmissive parts 41 are the same. If the direction of light travel from the light-emitting part 42 to the light-receiving part 43 is not horizontal, the installation heights of the pair of transmissive parts 41 will be different. In this case, more of the second gas G2 may settle in the holding part 33 that holds the lower transmissive part 41.
[0158] In this case as well, the first detection mechanism 40 may be configured such that the amount of second gas G2 supplied per unit time to the lower side in the direction of gravity is greater than the amount of second gas G2 supplied to the upper side. That is, the amount of second gas G2 supplied from one or more second gas supply ports 32 corresponding to the permeable section 41 located on the lower side is greater than the amount of second gas G2 supplied from one or more second gas supply ports 32 corresponding to the permeable section 41 located on the upper side. The first detection mechanism 40 may install more second gas supply pipes 31 corresponding to the permeable section 41 located on the lower side than the number of second gas supply pipes 31 corresponding to the permeable section 41 located on the upper side, or the diameter of the second gas supply pipes 31 located on the lower side may be set to be greater than the diameter of the second gas supply pipes 31 located on the upper side. Alternatively, the mist supply condition management unit 512 may set the supply conditions such that the amount of second gas G2 supplied from the lower second gas supply pipe 31 is greater than the amount of second gas G2 supplied from the upper second gas supply pipe 31.
[0159] <Supplementary information regarding Modification 1 and Modification 2 of the first embodiment>
[0160] Modifications 1 and 2 of the first embodiment have a permeable portion 41 and a second gas supply port 32 for supplying a second gas G2 to the permeable portion 41. The first detection mechanism 40 according to Modifications 1 and 2 of the first embodiment can be appropriately combined with all or part of the configuration of the first detection mechanism 40 according to the fifth embodiment. For example, the recess 44 in Modification 2 of the first embodiment may function as a holding portion 33 in the fifth embodiment.
[0161] 10: Film deposition chamber, 11, 22, 72: Outer container, 12: Mist supply port, 13: Film deposition target holding member, 20: Atomizer, 21, 71: Inner container, 23, 73: Ultrasonic transducer, 24: Atomizer outlet, 25: First gas supply pipe, 26: First gas supply port, 27: Second detection mechanism, 28: Spacer, 30: Connecting pipe, 31: Second gas supply pipe, 32: Second gas supply port, 33: Holding part, 40: First detection mechanism, 41: Transmitting part, 42: Light emitting part, 43: Light receiving part, 44: Recess, 50: Control device, 51: Control unit, 52: Memory unit, 53: Input unit, 54: Output unit, 61: First gas supply mechanism, 62: Second gas supply mechanism, 70: Liquid storage chamber, 74: Liquid supply pipe, 75: Liquid supply mechanism, 100, 200, 300: Film deposition apparatus, 251: Third gas supply port, 281: Shielding member, 511: State parameter acquisition unit, 512: Mist supply condition management unit, 521: Mist setting information, a1, a2, a3, b1: Arrow, D: Liquid, E: Propagating liquid, G1: First gas, G2: Second gas, M: Mist, S: Film deposition target, T: Distance
Claims
1. A film-forming apparatus comprising: an atomizer for generating mist from a liquid containing film-forming components; a film-forming chamber connected to the atomizer for adhering the mist supplied from the atomizer to an object to be film-formed; a permeable section located in at least one of the atomizer, the mist flow path from the atomizer to the film-forming chamber, and the film-forming chamber; a first detection mechanism for detecting parameters of the optical properties of the mist via the permeable section; a control mechanism for controlling mist supply conditions; and an anti-fog gas supply port for supplying an anti-fog gas to remove the mist adhering to the permeable section or to prevent the mist from adhering to the permeable section, wherein the control mechanism changes the mist supply conditions according to the parameters of the optical properties of the mist.
2. A film-forming apparatus according to claim 1, comprising a conveying gas supply port for supplying conveying gas to the atomizer, wherein the mist supply conditions include the amount of conveying gas supplied.
3. A film-forming apparatus according to claim 1, wherein the mist supply conditions include a mixing ratio of a plurality of gases having different content ratios of the film-forming component.
4. A film-forming apparatus according to claim 3, wherein the mist supply conditions are a mixing ratio of a gas containing the mist containing the film-forming component and a gas not containing the film-forming component.
5. A film-forming apparatus according to claim 2, wherein the control mechanism controls the mixing ratio of a gas containing the mist containing the film-forming component and a gas not containing the film-forming component by the inflow rates of the transport gas and the anti-fog gas.
6. A film deposition apparatus according to any one of claims 1 to 5, wherein the atomizer generates the mist using a vibrator, and the mist supply conditions include the driving conditions of the vibrator.
7. A film-forming apparatus according to any one of claims 1 to 6, comprising a supply mechanism for supplying the liquid to the atomizer, wherein the mist supply conditions include the amount of the liquid contained in the atomizer.
8. A film deposition apparatus according to any one of claims 1 to 7, wherein the first detection mechanism detects the concentration of the mist as a parameter of the optical properties of the mist.
9. A film deposition apparatus according to claim 8, wherein the first detection mechanism includes a transmittance meter.
10. A film deposition apparatus according to claim 8, wherein the first detection mechanism includes a turbidimeter.
11. A film deposition apparatus according to any one of claims 1 to 10, comprising a connecting tube connecting the atomizer and the film deposition chamber, the connecting tube comprising a light-transmitting portion, and the first detection mechanism measuring the light transmitted through the light-transmitting portion to detect the parameters of the optical properties of the mist.
12. A film-forming apparatus according to claim 11, wherein the connecting tube has a plurality of recesses facing each other, and the permeable portion is located at the bottom of the recesses.
13. A film-forming apparatus according to claim 11, wherein the anti-fog gas supply port is located upstream of the permeable portion in the mist supply direction of the connecting pipe.
14. A film-forming apparatus according to any one of claims 1 to 13, comprising a transport gas supply port for supplying transport gas to the atomizer, the anti-fogging gas supply port for supplying anti-fogging gas to the portion excluding the atomizer, and the mist supply conditions including the supply ratio of the transport gas and the anti-fogging gas.
15. A film deposition apparatus according to claim 14, wherein the anti-fogging gas supply port is located downstream of the atomizer in the direction of supplying the mist from the atomizer to the film deposition chamber.
16. A film-forming apparatus according to claim 14 or 15, comprising a connecting pipe connecting the atomizer and the film-forming chamber, wherein the anti-fog gas supply port is located in the connecting pipe.
17. A film-forming apparatus according to any one of claims 14 to 16, wherein the amount of anti-fog gas supplied per unit time is greater than the amount of conveying gas supplied per unit time.
18. A film-forming apparatus comprising: an atomizer for generating mist from a liquid containing film-forming components; a film-forming chamber for adhering the mist supplied from the atomizer to an object to be film-formed; a first detection mechanism for detecting parameters indicating the state of the mist; and a control mechanism for controlling the mist supply conditions, wherein the first detection mechanism is a thermometer or a hygrometer.
19. A film-forming apparatus according to claim 7, comprising: a liquid storage chamber for storing the liquid to be supplied to the atomizer; and a vibrator for vibrating the liquid stored in the liquid storage chamber.
20. A film-forming apparatus according to claim 7 or 19, comprising a second detection mechanism for detecting the amount of liquid contained in the atomizer.
21. A film deposition apparatus according to claim 20, comprising a third gas supply port for supplying a transport gas to the second detection mechanism.
22. A film-forming apparatus according to claim 21, comprising a conveying gas supply port for supplying the conveying gas to the atomizer, a fog-preventing gas supply port for supplying fog-preventing gas to the portion excluding the atomizer, and the mist supply conditions including the supply ratio of the conveying gas and the fog-preventing gas.
23. A film-forming apparatus according to claim 20, comprising an openable and closable shielding member between the liquid surface and the second detection mechanism.
24. A film-forming method comprising: generating mist from a liquid containing a film-forming component using an atomizer; adhering the mist supplied from the atomizer to an object to be film-formed; detecting parameters of the optical properties of the mist via a permeable section located in at least one of the atomizer, the mist flow path from the atomizer to the film-forming chamber, and the film-forming chamber; controlling the mist supply conditions; and supplying an anti-fog gas to remove the mist adhering to the permeable section or to prevent the mist from adhering to the permeable section, wherein controlling the mist supply conditions includes changing the mist supply conditions according to the parameters of the optical properties of the mist.
25. A film-forming method comprising: generating mist from a liquid containing a film-forming component using an atomizer; adhering the mist supplied from the atomizer to an object to be film-formed; detecting parameters indicating the state of the mist using a first detection mechanism; and controlling the mist supply conditions, wherein the first detection mechanism is a thermometer or a hygrometer.
26. A film-forming apparatus comprising: an atomizer for generating mist from a liquid containing film-forming components; a film-forming chamber connected to the atomizer for adhering the mist supplied from the atomizer to an object to be film-formed; a permeable section; a holding section for holding the permeable section with respect to at least one of the atomizer, the mist flow path from the atomizer to the film-forming chamber, and the film-forming chamber; a first detection mechanism for detecting parameters of the optical properties of the mist through the permeable section; and an anti-fog gas supply port for supplying an anti-fog gas to suppress the adhesion of the mist to the permeable section, wherein the holding section has one or more anti-fog gas supply ports.
27. A film-forming apparatus according to claim 26, wherein the anti-fog gas supply port is provided on the inside side of the atomizer, the mist flow path, or the film-forming chamber in which the permeate portion is provided, relative to the permeate portion.
28. A film deposition apparatus according to claim 26, wherein the holding portion is hollow, and the opening area on at least one side of the atomizer on which the holding portion is provided, the mist flow path from the atomizer to the film deposition chamber, and the film deposition chamber is smaller than the opening area on the side of the permeable portion.
29. A film-forming apparatus comprising: an atomizer for generating mist from a liquid containing film-forming components; a film-forming chamber connected to the atomizer for adhering the mist supplied from the atomizer to an object to be film-formed; a permeable section located in at least one of the atomizer, a mist flow path from the atomizer to the film-forming chamber, and the film-forming chamber; a first detection mechanism for detecting parameters of the optical properties of the mist via the permeable section; and an anti-fog gas supply port for supplying an anti-fog gas to suppress the adhesion of the mist to the permeable section, wherein a plurality of anti-fog gas supply ports are provided for one of the permeable sections.
30. A film-forming apparatus according to claim 28, wherein a plurality of anti-fog gas supply ports provided for one permeable portion each supply the anti-fog gas in different directions.
31. A film deposition apparatus according to claim 28, wherein the amount of anti-fog gas supplied per unit time to the downward side in the direction of gravity is greater than the amount of anti-fog gas supplied to the upward side.
32. A film deposition apparatus according to claim 30, comprising a control mechanism for controlling mist supply conditions, wherein the control mechanism controls the amount of anti-fog gas supplied per unit time from the anti-fog gas supply port provided on the lower side in the direction of gravity, so as to be greater than the amount supplied from the anti-fog gas supply port provided on the upper side.
33. A film deposition apparatus according to claim 28, comprising a control mechanism for controlling mist supply conditions, wherein the control mechanism causes the amount of anti-fog gas supplied from at least two anti-fog gas supply ports provided for one of the permeable sections to vary over time.
34. A film-forming apparatus comprising: an atomizer for generating mist from a liquid containing film-forming components; a film-forming chamber connected to the atomizer for adhering the mist supplied from the atomizer to an object to be film-formed; a permeable section located in at least one of the atomizer, the mist flow path from the atomizer to the film-forming chamber, and the film-forming chamber; a first detection mechanism for detecting parameters of the optical properties of the mist via the permeable section; and an anti-fog gas supply port for supplying an anti-fog gas to suppress the adhesion of the mist to the permeable section, wherein the permeable section has a plane on the interior side of the atomizer, the mist flow path, or the film-forming chamber on which the permeable section is provided, and the anti-fog gas supply port supplies the anti-fog gas in a direction parallel to the plane of the permeable section.
35. A film deposition apparatus according to any one of claims 1, 18, 26, 29, or 34, wherein the first detection mechanism includes a light-emitting unit that detects the parameter using light and irradiates light, and a light-receiving unit that receives the light irradiated by the light-emitting unit.
36. A film deposition apparatus according to claims 26, 29, and 34, comprising a control mechanism for controlling mist supply conditions, wherein the control mechanism changes the mist supply conditions according to the parameters of the optical properties of the mist.
37. A film deposition apparatus according to claims 26, 29, and 34, wherein the anti-fog gas supply port is slit-shaped.
38. A film-forming method comprising: generating mist from a liquid containing film-forming components using an atomizer; adhering the mist supplied from the atomizer to an object to be film-formed; detecting parameters of the optical properties of the mist via a permeable portion held by a holding portion to at least one of the atomizer, the mist flow path from the atomizer to the film-forming chamber, and the film-forming chamber; controlling the mist supply conditions; and supplying an anti-fog gas to suppress the adhesion of the mist to the permeable portion from one or more anti-fog gas supply ports of the holding portion, wherein controlling the mist supply conditions includes changing the mist supply conditions according to the parameters of the optical properties of the mist.
39. A method for forming a film, comprising: generating mist from a liquid containing film-forming components using an atomizer; adhering the mist supplied from the atomizer to an object to be film-formed; detecting parameters of the optical properties of the mist via a permeable portion located in at least one of the atomizer, the mist flow path from the atomizer to the film-forming chamber, and the film-forming chamber; controlling the mist supply conditions; and supplying an anti-fog gas from an anti-fog gas supply port to suppress the adhesion of the mist to the permeable portion, wherein controlling the mist supply conditions includes changing the mist supply conditions according to the parameters of the optical properties of the mist, the permeable portion having a surface facing the interior side of the atomizer, the mist flow path, or the film-forming chamber on which the permeable portion is provided, and the anti-fog gas supply port supplying the anti-fog gas in a direction parallel to the surface of the permeable portion.