Substrate processing device and operating method thereof

Abstract

The present disclosure relates to a substrate processing device for performing a heating process and a cooling process on a semiconductor substrate and an operating method thereof. The substrate processing device may comprise: a support chuck including at least one light absorbing unit; a plate including at least one laser device and a cooling line; and a support passing through a through-hole formed in a central portion of the plate and having one side accommodated in a groove formed in a central portion of the support chuck, wherein when a first process for increasing the temperature is performed on a semiconductor substrate disposed on the support chuck, the support chuck and the plate are spaced apart according to the rise of the support, and the at least one laser device emits a laser beam toward the at least one light absorbing unit, and when a second process for decreasing the temperature is performed on the semiconductor substrate, the support chuck and the plate come into contact with each other according to the lowering of the support, and a refrigerant is supplied through the cooling line.

Description

Substrate processing device and method of operation thereof

[0001] The present disclosure relates to semiconductor process equipment, and more specifically, to a substrate processing apparatus and a method of operation thereof that performs a heating process and a cooling process for a semiconductor substrate using a single chamber.

[0002] Generally, semiconductor process equipment can be configured based on at least one process zone for performing processes on semiconductor substrates. Each process zone where a process is performed on a semiconductor substrate may have a process environment established based on a specific temperature corresponding to the process, and a preset specific temperature for each process zone may be maintained through temperature control. The semiconductor process equipment can move the semiconductor substrate to the process zone for performing the corresponding process according to the process stage using a conveyor implemented in a linear or rotary manner.

[0003] However, the semiconductor process equipment described above has the problem that its size inevitably becomes large due to the inclusion of conveyors exceeding a certain size. Furthermore, if a problem occurs in a specific process area, the use of the entire semiconductor process equipment must be suspended; even when the equipment is not in use, continuous power consumption is unavoidable to maintain the temperature of each process area. Therefore, there is a need for a solution that can reduce the scale of semiconductor process equipment while ensuring operational efficiency.

[0004] In this regard, reference may be made to Korean Published Patent Application 10-2013-0135110A and Korean Published Patent Application 10-2015-0081723A.

[0005] The present disclosure aims to provide a substrate processing apparatus and a method of operation thereof for performing a heating process and a cooling process for a semiconductor substrate using a single chamber.

[0006] The present disclosure aims to provide a substrate processing apparatus that performs a heating process using a laser and a cooling process using a plate, and a method of operating the same.

[0007] The problems that this disclosure aims to solve are not limited to those described above, and other unmentioned problems will be clearly understood by a person skilled in the art from the description below.

[0008] A substrate processing apparatus according to one embodiment of the present disclosure comprises a support chuck including at least one light absorption portion, a plate including at least one laser and a cooling line, and a support member penetrating a through hole formed in the center of the plate and having one side received in a groove formed in the center of the support chuck. When performing a first process for raising the temperature of a semiconductor substrate disposed on the support chuck, the support chuck and the plate are separated as the support member rises, and the at least one laser irradiates laser light onto the at least one light absorption portion. When performing a second process for lowering the temperature of the semiconductor substrate, the support chuck and the plate come into contact as the support member lowers, and a refrigerant can be supplied through the cooling line.

[0009] In an embodiment, when performing the first process, the support can be raised in accordance with a separation distance determined based on at least some of the semiconductor process recipe information, information related to the specifications of the at least one light absorbing part, and information related to the specifications of the at least one laser.

[0010] In an embodiment, when the support chuck includes a plurality of light absorbing parts and the plate includes a plurality of lasers, each of the plurality of lasers can irradiate the laser light to at least some of the plurality of light absorbing parts corresponding to each of the plurality of lasers based on an output wavelength determined based on at least some of the semiconductor process recipe information, information related to the specifications of each of the plurality of light absorbing parts, and information related to the specifications of each of the plurality of lasers.

[0011] In an embodiment, each of the plurality of lasers can irradiate the laser light onto at least some of the plurality of light absorbers corresponding to each of the plurality of lasers based on an output direction determined based on at least some of the semiconductor process recipe information, information related to the specifications of each of the plurality of light absorbers, and information related to the specifications of each of the plurality of lasers.

[0012] In an embodiment, the cooling line can supply refrigerant based on at least some of the semiconductor process recipe information, information related to the specifications of the plate, information related to the specifications of the cooling line, and information on the refrigerant used.

[0013] In an embodiment, the support chuck may further include a temperature sensor for measuring the temperature of the semiconductor substrate.

[0014] In an embodiment, the cooling line may be formed as a first type in which an inlet for supplying the refrigerant and an outlet for discharging the refrigerant are integrated, or as a second type in which the inlet and the outlet are independent.

[0015] In an example, the refrigerant may include at least one of a hydrocarbon, a halocarbon, an organic compound, and an inorganic compound.

[0016] A substrate processing apparatus according to one embodiment of the present disclosure comprises at least one light absorbing member, a support chuck fixed in position within a chamber, a plate including at least one laser and a cooling line, and a support member received in a groove formed in the center of the plate. When performing a first process for raising the temperature of a semiconductor substrate placed on the support chuck, the support chuck and the plate are separated as the support member lowers, and the at least one laser irradiates laser light onto the at least one light absorbing member. When performing a second process for lowering the temperature of the semiconductor substrate, the support chuck and the plate come into contact as the support member rises, and a refrigerant can be supplied through the cooling line.

[0017] In a method of operation of a substrate processing apparatus for performing temperature control of a semiconductor substrate according to one embodiment of the present disclosure, the method of operation may include the steps of: placing the semiconductor substrate introduced from the outside on a support chuck; separating the support chuck and a plate to perform a first process for raising the temperature of the semiconductor substrate and irradiating laser light onto at least one light absorption portion included in the support chuck using at least one laser included in the plate; and bringing the support chuck and the plate into contact and supplying a refrigerant through a cooling line included in the plate to perform a second process for lowering the temperature of the semiconductor substrate.

[0018] According to an embodiment of the present disclosure, by performing a heating process and a cooling process for a semiconductor substrate using a single chamber, the size of the semiconductor process equipment can be reduced and the cycle time for semiconductor substrate production can be reduced.

[0019] According to an embodiment of the present disclosure, by performing a heating process using a laser and a cooling process using a plate, the standby power of the semiconductor process equipment can be reduced, and a stable temperature gradient and detailed temperature control for the semiconductor substrate can be achieved.

[0020] The effects according to the present disclosure are not limited to those described above, and other unmentioned effects will be clearly understood by a person skilled in the art from the description below.

[0021] FIG. 1 is a block diagram illustrating a substrate processing system according to an embodiment of the present disclosure.

[0022] FIG. 2 is a cross-sectional view of a substrate processing apparatus according to an embodiment of the present disclosure.

[0023] FIG. 3a is a plan view of a support chuck according to an embodiment of the present disclosure.

[0024] FIG. 3b is a plan view of a plate according to an embodiment of the present disclosure.

[0025] FIG. 4 is a block diagram illustrating the configuration of an electronic device according to an embodiment of the present disclosure.

[0026] FIG. 5 is a flowchart illustrating the operation method of a substrate processing system according to an embodiment of the present disclosure.

[0027] FIG. 6 is a drawing for explaining the heating process operation of a substrate processing apparatus according to an embodiment of the present disclosure.

[0028] FIG. 7 is a flowchart illustrating the operation method of a substrate processing apparatus for performing a heating process according to an embodiment of the present disclosure.

[0029] FIG. 8 is a drawing for explaining the operation of a cooling process of a substrate processing apparatus according to an embodiment of the present disclosure.

[0030] FIG. 9 is a flowchart illustrating the operation method of a substrate processing apparatus for performing a cooling process according to an embodiment of the present disclosure.

[0031] FIG. 10a is a drawing for explaining a heating process of a substrate processing apparatus according to another embodiment of the present disclosure.

[0032] FIG. 10b is a drawing for explaining a cooling process of a substrate processing apparatus according to another embodiment of the present disclosure.

[0033] FIG. 11 is a block diagram illustrating an electronic device according to an embodiment of the present disclosure.

[0034] Hereinafter, exemplary embodiments according to the present invention will be described in detail with reference to the contents described in the attached drawings. However, the present invention is not limited or restricted by exemplary embodiments. Unless otherwise defined, all terms used in this specification (including technical and scientific terms) shall be used in a meaning that is commonly understood by those skilled in the art to which this disclosure belongs, but this may vary depending on the intent of those skilled in the art, case law, the emergence of new technology, etc.

[0035] Furthermore, terms defined in commonly used dictionaries are not to be interpreted ideally or excessively unless explicitly and specifically defined otherwise. In certain cases, terms have been selected at the applicant's discretion, and in such cases, their meanings will be described in detail in the relevant explanatory sections. Accordingly, terms used in this disclosure should be defined not merely by their names, but based on their meanings and the content throughout this disclosure.

[0036] Throughout this specification, when a part is described as "comprising" a certain component, this means that, unless specifically stated otherwise, it does not exclude other components but may include additional components. Furthermore, the singular form used in this specification includes the plural form unless specifically stated otherwise. Additionally, the expression "at least one of a, b, and / or c" as used throughout this specification may encompass 'a alone', 'b alone', 'c alone', 'a and b', 'a and c', 'b and c', or 'a, b, and c all'.

[0037] Meanwhile, terms such as "first and / or second" used in this specification may be used to describe various components, but they are used solely for the purpose of distinguishing one component from another and are not intended to limit the scope to the components referred to by such terms. For example, without departing from the scope of the present invention, the first component may be named the second component, and the second component may also be named the first component.

[0038] Additionally, terms such as “…part,” “…module,” etc., as described in this specification refer to a unit that processes at least one function or operation, which may be implemented in hardware or software, or a combination of hardware and software. Furthermore, embodiments of this disclosure may be represented in this specification by functional block configurations and various processing steps. These functional blocks may be implemented by various numbers of hardware and / or software configurations that execute specific functions. For example, embodiments of this disclosure may employ integrated circuit configurations such as memory, processing, logic, look-up tables, etc., which can execute various functions under the control of one or more microprocessors or other control devices.

[0039] Hereinafter, various embodiments of the present disclosure will be described in detail with reference to the accompanying drawings. In describing the embodiments, technical details that are well known in the art to which the present invention pertains and are not directly related to the present invention will be omitted. This is to ensure that the essence of the present invention is conveyed more clearly without obscuring it by omitting unnecessary explanations. For the same reason, some components in the accompanying drawings may be exaggerated, omitted, or schematically depicted. Furthermore, the size of each component does not entirely reflect its actual size. Throughout this specification, the same reference numerals may refer to the same or corresponding components.

[0040] FIG. 1 is a block diagram illustrating a substrate processing system (10) according to an embodiment of the present disclosure.

[0041] Referring to FIG. 1, a substrate processing system (10) according to an embodiment of the present disclosure may include a substrate processing device (110) and an electronic device (120).

[0042] A substrate processing device (110) according to an embodiment of the present disclosure can perform a semiconductor process on a substrate disposed on the substrate processing device (110) and may be included in semiconductor process equipment. In an embodiment of the present disclosure, the substrate that can be disposed on the substrate processing device (110) may be at least one of a semiconductor wafer, a mask, a glass substrate, and a liquid crystal display (LCD).

[0043] Hereinafter, the substrate processing device (110) according to an embodiment of the present disclosure will be described as a device for performing a reflow process for producing a semiconductor chip, but this is for convenience of explanation only and does not limit the content of the present disclosure. According to various embodiments of the present disclosure, the substrate processing device (110) may be a device for performing any process requiring temperature control among various manufacturing processes for producing a semiconductor chip, such as a plasma process, a package process, a reflow process, an etching process, a deposition process, a photo process, and a heat treatment process.

[0044] A substrate processing device (110) according to an embodiment of the present disclosure can perform a heating process and a cooling process on a semiconductor substrate using a single chamber. A substrate processing device (110) according to an embodiment of the present disclosure may include a laser facility for performing a heating process and a plate facility for performing a cooling process. In this specification, the heating process may refer to any process requiring a temperature increase of the substrate processing device (110), and the cooling process may refer to any process requiring a temperature decrease of the substrate processing device (110). The specific configuration and structure of the substrate processing device (110) according to an embodiment of the present disclosure will be described in detail through FIGS. 2 to 10b, which will be described later.

[0045] The electronic device (120) can control the operation of the substrate processing device (110) based on semiconductor process recipe information. In some embodiments, the semiconductor process recipe information may be stored in a memory included in the electronic device (120), and the semiconductor process recipe information may include information related to the semiconductor process performed in the substrate processing device (110). Specifically, the semiconductor process recipe information may include at least some of the semiconductor process procedure information performed in the substrate processing device (110), heating temperature information for the heating process performed in the substrate processing device (110), and cooling temperature information for the cooling process. The electronic device (120) can monitor the operating state of the substrate processing device (110), process necessary information corresponding to the operating state of the substrate processing device (110) and the semiconductor process recipe information, and can control at least one configuration included in the substrate processing device (110) to change the temperature of the substrate processing device (110).

[0046] Meanwhile, in FIG. 1, the substrate processing device (110) and the electronic device (120) are shown as separate components, but this is merely an example of an embodiment according to the present disclosure and does not limit the form of the substrate processing system (10) according to the present disclosure. Specifically, the substrate processing device (110) and the electronic device (120) may be electrically connected or wirelessly connected as shown in FIG. 1. When the substrate processing device (110) and the electronic device (120) are wirelessly connected, each of the substrate processing device (110) and the electronic device (120) may include a communication module for communication. Alternatively, the electronic device (120) may be implemented by being included in the substrate processing device (110).

[0047] Unlike conventional semiconductor process equipment that performs processes on semiconductor substrates using multiple chambers corresponding to each process step, the substrate processing system (10) according to the embodiment of the present disclosure can process multiple process steps using a single chamber, thereby allowing the size of the semiconductor process equipment to be miniaturized. In addition, unlike conventional process equipment that moves the substrate to a process area corresponding to each process step via a conveyor to perform each process step, the substrate processing system (10) according to the embodiment of the present disclosure can process multiple process steps in a single process area, thereby allowing the cycle time for semiconductor substrate production to be reduced.

[0048] Meanwhile, unlike conventional process equipment that continuously consumes power to maintain the temperature of each process area corresponding to each process step, the substrate processing system (10) according to the embodiment of the present disclosure performs temperature changes for the process more quickly based on laser equipment and plate equipment, thereby reducing the standby power of the semiconductor process equipment and enabling a stable temperature gradient and detailed temperature control for the semiconductor substrate.

[0049] Meanwhile, in FIG. 1, the substrate processing system (10) is shown to include one substrate processing device (110) and an electronic device (120), but this is merely an example of an embodiment according to the present disclosure and does not limit the form of the substrate processing system (10) according to the present disclosure. Specifically, in some embodiments, the substrate processing system (10) may include a plurality of substrate processing devices (110) and at least one electronic device (120). When the substrate processing system (10) includes a plurality of substrate processing devices (110) and one electronic device (120), the plurality of substrate processing devices (110) may be controlled by one electronic device (120), and when the substrate processing system (10) includes a plurality of substrate processing devices (110) and a plurality of electronic devices (120), each of the plurality of substrate processing devices (110) may be controlled by an electronic device (120) corresponding to each of the plurality of substrate processing devices (110).

[0050] FIG. 2 is a cross-sectional view of a substrate processing apparatus (200) according to an embodiment of the present disclosure.

[0051] The substrate processing device (200) illustrated in FIG. 2 may correspond to the substrate processing device (110, see FIG. 1) described above in FIG. 1, and with reference to FIG. 2, the substrate processing device (220) according to an embodiment of the present disclosure may include a support chuck (210), a plate (220), and a support (230), and the support chuck (210) may include a plurality of light absorption parts (211_1, 211_2, 211_3, 211_4), and the plate (220) may include a plurality of lasers (221_1, 221_2, 221_3, 221_4) and a cooling line (222).

[0052] In an embodiment of the present disclosure, the support chuck (210) can support a substrate (SUB) that is to be subjected to a semiconductor process by a substrate processing device (200). The substrate (SUB) can be placed on a first surface of the support chuck (210), and when the substrate (SUB) supplied from the outside is placed on the first surface of the support chuck (210), the substrate processing device (200) can perform a process procedure on the substrate (SUB). Meanwhile, in an embodiment, a plurality of light absorption parts (211_1, 211_2, 211_3, 211_4) can be accommodated or inserted into each of a plurality of grooves or a plurality of recesses formed in the support chuck (210). One surface of each of the plurality of light absorption parts (211_1, 211_2, 211_3, 211_4) may be arranged to form a substantially flat plane with one surface of the support chuck (210). In this specification, the plane formed by one surface of the support chuck (210) and one surface of each of the plurality of light absorption parts (211_1, 211_2, 211_3, 211_4) may be referred to as the second surface of the support chuck (210), and the second surface of the support chuck (210) may be parallel to the first surface on which the substrate (SUB) is placed. The arrangement of the plurality of light absorption parts (211_1, 211_2, 211_3, 211_4) according to an embodiment of the present disclosure will be described in detail in FIG. 3a, which will be described later.

[0053] In an embodiment, when the substrate processing device (200) performs a heating process, each of the plurality of light absorption parts (211_1, 211_2, 211_3, 211_4) can absorb laser light energy irradiated from at least one of the plurality of lasers (221_1, 221_2, 221_3, 221_4), and the substrate (SUB) on the support chuck (210) can be heated based on the absorbed light energy. The support chuck (210) can transmit the laser light energy absorbed from the plurality of light absorption parts (211_1, 211_2, 211_3, 211_4) to a first surface of the support chuck (210), and the support chuck (210) may include a metallic material for the transmission of laser light energy.

[0054] In an embodiment of the present disclosure, the plate (220) may be arranged parallel to the support chuck (210). A plurality of lasers (221_1, 221_2, 221_3, 221_4) for raising the temperature of the substrate (SUB) may be received or inserted into each of a plurality of grooves or a plurality of recesses formed in the plate (220). The light irradiation portion of each of the plurality of lasers (221_1, 221_2, 221_3, 221_4) may be arranged to form a plane with one surface of the plate (220), and the plane formed by the light irradiation portion of each of the plurality of lasers (221_1, 221_2, 221_3, 221_4) with one surface of the plate (220) may be referred to as the first surface of the plate (220), and the first surface of the plate (220) may be parallel to the second surface of the support chuck (210). Meanwhile, a cooling line (222) for lowering the temperature of the substrate (SUB) can be implemented in the form of a tube and placed within the plate (220). The arrangement of the cooling line (222) according to an embodiment of the present disclosure will be described in detail in FIG. 3, which will be described later.

[0055] In an embodiment, at least some of the plurality of lasers (221_1, 221_2, 221_3, 211_4) and cooling lines (222) included in the plate (220) may be operated by the control of an electronic device (120, see FIG. 1). Specifically, when the substrate processing device (200) performs a heating process on the substrate (SUB), at least some of the plurality of lasers (221_1, 221_2, 221_3, 221_4) included in the plate (220) may be operated by the control of the electronic device (120). Meanwhile, when the substrate processing device (200) performs a cooling process on the substrate (SUB), the cooling lines (222) included in the plate (220) may be operated by the control of the electronic device (120).

[0056] According to an embodiment of the present disclosure, the support member (230) may pass through a through hole formed in the center of the plate (220). One side of the support member (230) may be fixed in a manner that is received or inserted into a groove or recess formed in the center of the support chuck (210). The support member (230) may perform an up-and-down movement under the control of an electronic device (120). Specifically, when the substrate processing device (200) according to an embodiment of the present disclosure performs a heating process, the support member (230) may rise under the control of the electronic device (120), and the support chuck (210) and the plate (220) may be separated as the support member (230) rises. Meanwhile, when the substrate processing device (200) according to the embodiment of the present disclosure performs a cooling process, the support (230) may be lowered by the control of the electronic device (120), and the support chuck (210) and the plate (220) may come into contact as the support (230) is lowered. The plate (220) included in the substrate processing device (220) shown in FIG. 2 may be fixed and positioned at a specific location regardless of the up-and-down movement of the support (230), and the position of the support chuck (210) may change according to the up-and-down movement of the support (230). The specific operation of the substrate processing device (200) for each process will be described in detail in FIG. 6 and FIG. 8, which will be described later.

[0057] Meanwhile, in the cross-sectional view of the substrate processing device (200) shown in FIG. 2, only the first to fourth light absorption parts (211_1, 211_2, 211_3, 211_4) are shown; however, this merely illustrates a cross-section of the substrate processing device (200) according to one embodiment of the present disclosure and does not limit the configuration of the substrate processing device (200) according to one embodiment of the present disclosure. In addition, in the cross-sectional view of the substrate processing device (200) shown in FIG. 2, only the first to fourth lasers (221_1, 221_2, 221_3, 221_4) are shown; however, this also merely illustrates a cross-section of the substrate processing device (200) according to one embodiment of the present disclosure and does not limit the configuration of the substrate processing device (200) according to one embodiment of the present disclosure. In this regard, it will be explained in detail through FIG. 3a and 3b, which will be described later.

[0058] FIG. 3a is a plan view of a support chuck (310) according to an embodiment of the present disclosure, and FIG. 3b is a plan view of a plate (320) according to an embodiment of the present disclosure.

[0059] Referring to FIG. 3a, a support chuck (310) according to one embodiment of the present disclosure may include a plurality of light-absorbing parts (311_1, 311_2, …, 311_18) and a support member (330). The support chuck (310) shown in FIG. 3a may correspond to the support chuck (210, see FIG. 2) shown in FIG. 2 described above, some of the plurality of light-absorbing parts (311_1, 311_2, …, 311_18) shown in FIG. 3a may correspond to the plurality of light-absorbing parts (211_1, 211_2, 211_3, 211_4, see FIG. 2) shown in FIG. 2 described above, and the support member (330) included in the support chuck (310) may correspond to at least some of the support member (230, see FIG. 2) shown in FIG. 2 described above.

[0060] In an embodiment, each of the plurality of light-absorbing parts (311_1, 311_2, …, 311_18) may include a light-absorbing material that absorbs laser light irradiated from a laser. In FIG. 3a, each of the plurality of light-absorbing parts (311_1, 311_2, …, 311_18) is shown as being formed in a circular shape, but this is merely an illustration of a shape according to one embodiment of the present disclosure and does not limit the shape of each of the plurality of light-absorbing parts (311_1, 311_2, …, 311_18) formed according to an embodiment of the present disclosure. According to an embodiment of the present disclosure, each of the plurality of light-absorbing parts (311_1, 311_2, …, 311_18) may be formed in any shape for absorbing laser light.

[0061] Additionally, in FIG. 3a, the first to eighteen light absorption parts (311_1, 311_2, …, 311_18) are shown arranged radially around the support (330), but this is merely an illustration of the arrangement form according to one embodiment of the present disclosure and does not limit the arrangement form of the plurality of light absorption parts (311_1, 311_2, …, 311_18) according to the embodiment of the present disclosure. According to the embodiment of the present disclosure, the plurality of light absorption parts (311_1, 311_2, …, 311_18) can be arranged in any shape to absorb laser light, and in order to increase the efficiency of laser light absorption, the area of ​​the plurality of light absorption parts (311_1, 311_2, …, 311_18) can occupy 50% or more of the area of ​​the support chuck (310).

[0062] Meanwhile, referring to FIG. 3b, a plate (320) according to one embodiment of the present disclosure may include a plurality of lasers (321_1, 321_2, …, 321_18), a cooling line (322), and a support (330). At least some of the plurality of lasers (321_1, 321_2, …, 321_18) shown in FIG. 3b may correspond to the plurality of lasers (221_1, 221_2, 221_3, 221_4) shown in FIG. 2 above, and the cooling line (322) shown in FIG. 3b may correspond to the cooling line (222, see FIG. 2) shown in FIG. 2 above. Additionally, the support (330) shown in FIG. 3b may correspond to at least some of the support (230, see FIG. 2) shown in FIG. 2 above.

[0063] In an embodiment, when a substrate processing device (110, see FIG. 1) performs a heating process, each of the plurality of lasers (321_1, 321_2, …, 321_18) can irradiate laser light onto at least some of the plurality of light absorbing parts (311_1, 311_2, …, 311_18) under the control of an electronic device (120, see FIG. 1). The plurality of lasers (321_1, 321_2, …, 321_18) may be arranged between cooling lines (322). In FIG. 3b, the first to eighteen lasers (321_1, 321_2, …, 321_18) are shown arranged radially around a support (330), but this is merely an illustration of an arrangement according to one embodiment of the present disclosure and does not limit the arrangement of the plurality of lasers (321_1, 321_2, …, 321_18) according to an embodiment of the present disclosure. According to an embodiment of the present disclosure, the plurality of lasers (321_1, 321_2, …, 321_18) may be arranged in any shape for irradiating laser light.

[0064] In an embodiment, each of the plurality of lasers (321_1, 321_2, …, 321_18) can irradiate a light absorption part corresponding to each of the plurality of lasers (321_1, 321_2, …, 321_18) with a laser light having a wavelength set based on at least some of the semiconductor process recipe information stored in the electronic device (120), the light absorption rate information of each of the plurality of light absorption parts (311_1, 311_2, …, 311_18), and the state information of the substrate processing device (110), under the control of the electronic device (120). Information regarding the light absorption part corresponding to each of the plurality of lasers (321_1, 321_2, …, 321_18) may be pre-set and stored in the electronic device (120), or may be confirmed by the electronic device (120) based on the state information of the substrate processing device (110) and the semiconductor process recipe stored in the electronic device (120).

[0065] In an embodiment, at least some of the first to eighth lasers (321_1, 321_2, …, 321_18) may be set to correspond to at least some of the first to eighth light absorption parts (311_1, 311_2, …, 311_18). For example, as illustrated in FIG. 3a and FIG. 3b, when the support chuck (310) includes first to eighth lasers (321_1, 321_2, …, 321_18) and the plate (320) includes first to eighth light absorption portions (311_1, 311_2, …, 311_18), the first to eighth lasers (321_1, 321_2, …, 321_18) may be set to have a one-to-one correspondence with the first to eighth light absorption portions (311_1, 311_2, …, 311_18). In this case, the laser light irradiated from the first laser (321_1) can be absorbed by the first light absorption unit (311_1), the laser light irradiated from the second laser (321_2) can be absorbed by the second light absorption unit (311_2), the laser light irradiated from the third laser (321_3) can be absorbed by the third light absorption unit (311_3), and the laser light irradiated from the eighth laser (321_18) can be absorbed by the eighth light absorption unit (311_18).

[0066] As another example, each of the first to eighth lasers (321_1, 321_2, …, 321_18) may be configured to have a one-to-many correspondence with at least two of the first to eighth light absorption parts (311_1, 311_2, …, 311_18). In this case, the laser light irradiated from the first laser (321_1) can be absorbed by the first light absorption unit (311_1) and any light absorption unit adjacent to the first light absorption unit (311_1), the laser light irradiated from the second laser (321_2) can be absorbed by any light absorption unit adjacent to the second light absorption unit (311_2), the laser light irradiated from the third laser (321_3) can be absorbed by the third light absorption unit (311_3) and any light absorption unit adjacent to the third light absorption unit (311_3), and the laser light irradiated from the 18th laser (321_18) can be absorbed by the 18th light absorption unit (311_18) and any light absorption unit adjacent to the 18th light absorption unit (311_18). As another example, at least two of the first to eighth lasers (321_1, 321_2, …, 321_18) may be configured to have a many-to-one correspondence with each of the first to eighth light absorption units (311_1, 311_2, …, 311_18), or at least two of the first to eighth lasers (321_1, 321_2, …, 321_18) may be configured to have a many-to-many correspondence with at least two of the first to eighth light absorption units (311_1, 311_2, …, 311_18).

[0067] In FIGS. 3a and 3b, the support chuck (310) is shown to include first to eighth light absorption portions (311_1, 311_2, …, 311_18) and the plate (320) is shown to include first to eighth lasers (321_1, 321_2, …, 321_18), but this is merely an embodiment according to the present disclosure and does not limit the configuration according to the present disclosure. According to an embodiment of the present disclosure, the support chuck (310) may include any number of light absorption portions and the plate (320) may include any number of lasers.

[0068] Meanwhile, in the embodiment, when the substrate processing device (110) performs a cooling process, a refrigerant may be inflowed into the cooling line (322) by the control of the electronic device (120). The refrigerant inflowed into the cooling line (322) can absorb heat from the substrate (SUB) placed on the support chuck (310) and lower the temperature of the substrate (SUB). In the embodiment, the cooling line (322) may be formed as a pipe through which the refrigerant can flow, and in FIG. 3b, the cooling line (322) is shown as being formed as a circulating pipe in which the inlet and outlet are integrated; however, this merely illustrates the form of the cooling line (322) according to one embodiment of the present disclosure and does not limit the form of the cooling line (322) according to the embodiment of the present disclosure. According to another embodiment of the present disclosure, the cooling line (322) may be formed as a pipe with a separated inlet and outlet, in which case the refrigerant introduced into the inlet may flow along the cooling line (322) and be discharged into the outlet. In the embodiment, the type of refrigerant introduced into the cooling line (322) may be determined based on semiconductor process recipe information and may include at least one of a hydrocarbon, a halocarbon, an organic compound, and an inorganic compound.

[0069] FIG. 4 is a block diagram illustrating the configuration of an electronic device (400) according to an embodiment of the present disclosure.

[0070] The electronic device (400) illustrated in FIG. 4 may correspond to the electronic device (120, see FIG. 1) described above in FIG. 1. Referring to FIG. 4, the electronic device (400) may include a control unit (410), a temperature measuring unit (420), a distance adjusting unit (430), a heating process control unit (440), and a cooling process control unit (450). In FIG. 4, the control unit (410), the temperature measuring unit (420), the distance adjusting unit (430), the heating process control unit (440), and the cooling process control unit (450) are each depicted as physically separated components; however, this is merely for convenience of explanation and does not limit the configuration of the electronic device (400) according to the embodiment of the present disclosure. The control unit (410), temperature measuring unit (420), distance adjusting unit (430), heating process control unit (440), and cooling process control unit (450) included in the electronic device (400) according to the embodiment of the present disclosure may mean logically separated configurations.

[0071] In an embodiment, the control unit (410) can perform a process for temperature control of a substrate processing device (110, see FIG. 1) based on a program (or algorithm) stored in memory. Specifically, the control unit (410) can check whether a substrate (SUB, see FIG. 2) is placed on a support chuck (210, see FIG. 2) of the substrate processing device (110), and if it is confirmed that a substrate (SUB) is placed on the support chuck (210), the control unit can perform a process for temperature control of the substrate processing device (110) based on semiconductor process recipe information stored in memory. In performing the process for temperature control, the control unit (410) can control a temperature measuring unit (420), a distance adjusting unit (430), a heating process control unit (440), and a cooling process control unit (450).

[0072] In an embodiment, the temperature measuring unit (420) may acquire temperature information measured for a substrate (SUB) placed on a support chuck (210) and provide the acquired temperature information to the control unit (410). In some embodiments, a temperature sensor for measuring the temperature of the substrate (SUB) may be included in the support chuck (210), and temperature information measured from the temperature sensor may be provided to the temperature measuring unit (420).

[0073] In an embodiment, the distance control unit (430) can control the vertical movement of the support (230, see FIG. 2). Specifically, when the substrate processing device (110) performs a heating process, the support (230) can be raised so that the support chuck (210) and the plate (220, see FIG. 2) are separated, and the height of the support (230) can be determined based on at least some of the semiconductor process recipe information, information related to the specifications of a plurality of light absorption units (211_1, 211_2, 211_3, 211_4, see FIG. 2) included in the support chuck (210), and information related to the specifications of a plurality of lasers (221_1, 221_2, 221_3, 221_4, see FIG. 2) included in the plate (220). Meanwhile, when the substrate processing device (110) performs a cooling process, the support (230) can be lowered so that the support chuck (210) and the plate (220) come into contact. The specific operation of the up-and-down movement of the support (230) by the distance adjustment unit (430) according to the process stage will be explained in detail through FIGS. 6 to 9, which will be described later.

[0074] In an embodiment, the heating process control unit (440) can control the output of a plurality of lasers (221_1, 221_2, 221_3, 221_4) included in the plate (220) when a heating process is performed in the substrate processing device (110). Specifically, the heating process control unit (440) can control whether each of the plurality of lasers (221_1, 221_2, 221_3, 221_4) is output and at least some of the output wavelengths based on at least some of the semiconductor process recipe information, information related to the specifications of the plurality of light absorption units (211_1, 211_2, 211_3, 211_4), and information related to the specifications of the plurality of lasers (221_1, 221_2, 221_3, 221_4). The driving method of the plurality of lasers (221_1, 221_2, 221_3, 221_4) by the heating process control unit (440) will be explained in detail through FIGS. 6 and FIGS. 7, which will be described later.

[0075] In an embodiment, the cooling process control unit (450) can control the inflow and outflow of refrigerant to the cooling line (222, see FIG. 2) included in the plate (220) when a cooling process is performed in the substrate processing device (110). Specifically, the cooling process control unit (450) can supply refrigerant to the inflow portion of the cooling line (222) based on at least some of the semiconductor process recipe information, information related to the specifications of the plate (220), information related to the specifications of the cooling line (222), and refrigerant information used in the substrate processing device (110). The refrigerant supplied to the inflow portion can flow to the outflow portion.

[0076] In some embodiments, a first valve for controlling the inflow of refrigerant may be provided at the inflow portion of the cooling line (222), and a second valve for controlling the outflow of refrigerant may be provided at the outflow portion of the cooling line (222). The cooling process control unit (450) can control the inflow of refrigerant to the cooling line (222) by controlling the opening and closing of the first valve and the second valve. The driving method of the cooling line (222) by the cooling process control unit (450) will be explained in detail through FIGS. 8 and 9, which will be described later.

[0077] FIG. 5 is a flowchart for explaining the operation method of a substrate processing system (10, see FIG. 1) according to an embodiment of the present disclosure.

[0078] In step S510, a substrate processing device (110) according to an embodiment of the present disclosure may place a substrate (SUB, see FIG. 2) introduced from the outside on a support chuck (210, see FIG. 2) by control of an electronic device (120, see FIG. 2). In the embodiment, the substrate (SUB) may be provided from a chamber for performing a process prior to the process performed in the substrate processing device (110), and the substrate processing device (110) may align the substrate (SUB) provided on the support chuck (210) into a position that is easy to perform the process performed in the substrate processing device (110).

[0079] In step S520, the substrate processing device (110) according to an embodiment of the present disclosure may perform a heating process by controlling an electronic device (120). The substrate processing device (110) may raise the temperature of the substrate (SUB) through the heating process. The electronic device (120) may control the substrate processing device (110) based on at least some of the semiconductor process recipe information stored in the electronic device (120), information related to the specifications of a plurality of light absorption units (211_1, 211_2, 211_3, 211_4, see FIG. 2) included in the substrate processing device (110), and information related to the specifications of a plurality of lasers (221_1, 221_2, 221_3, 221_4, see FIG. 2) included in the plate (220).

[0080] In some embodiments, information related to the specifications of a plurality of light absorbing parts (211_1, 211_2, 211_3, 211_4) may include light absorption rate information for each of the plurality of light absorbing parts (211_1, 211_2, 211_3, 211_4), and information related to the specifications of a plurality of lasers (221_1, 221_2, 221_3, 221_4) may include output wavelength range information for each of the plurality of lasers (221_1, 221_2, 221_3, 221_4). A method for the substrate processing device (110) to perform a heating process will be described in detail through FIGS. 6 and 7, which will be described later.

[0081] In step S530, the substrate processing device (110) according to an embodiment of the present disclosure may perform a cooling process under the control of an electronic device (120). The substrate processing device (110) may lower the temperature of the substrate (SUB) through the cooling process. The electronic device (120) may control the substrate processing device (110) based on at least some of the semiconductor process recipe information stored in the electronic device (120), information related to the specifications of a plate (220, see FIG. 2) included in the substrate processing device (110), information related to the specifications of a cooling line (222, see FIG. 2) included in the substrate processing device (110), and information on a refrigerant used in the substrate processing device (110).

[0082] In some embodiments, information related to the specifications of the plate (220) may include at least some of the material information of the plate (220) and the area information of the plate (220), and information related to the specifications of the cooling line (222) may include at least some of the material information of the pipe constituting the cooling line (222), the thermal conductivity information of the pipe constituting the cooling line (222), the surface area information of the cooling line (222), the flow rate information that can be supplied through the cooling line (222), and the cooling capacity information of the cooling line (222), and refrigerant information may include at least some of the material property information of the refrigerant, the flow rate information of the refrigerant, and the heat absorption information of the refrigerant. A method for the substrate processing device (110) to perform a cooling process will be described in detail through FIGS. 8 and 9, which will be described later.

[0083] In step S540, the electronic device (120) can determine whether the process for the substrate (SUB) has ended based on semiconductor process recipe information stored in the electronic device (120). If it is confirmed that the process for the substrate (SUB) has not ended based on the semiconductor process procedure information included in the semiconductor process recipe information, the procedure may return to step S520. Meanwhile, if it is confirmed that the process for the substrate (SUB) has ended based on the semiconductor process procedure information included in the semiconductor process recipe information, the procedure may end.

[0084] FIG. 6 is a drawing for explaining the heating process operation of a substrate processing device (600) according to an embodiment of the present disclosure.

[0085] The substrate processing device (600) illustrated in FIG. 6 may correspond to the substrate processing device (110, see FIG. 1) described above in FIG. 1. When the substrate processing device (600) is controlled to perform a heating process on a substrate (SUB) placed on a support chuck (610) by an electronic device (120, see FIG. 1) according to an embodiment of the present disclosure, the support member (630) may be raised so that the support chuck (610) and the plate (620) can be separated by a separation distance determined by the electronic device (120). As the support member (630) is raised, the support chuck (610) may be raised relative to the position of the plate (620). In an embodiment, the electronic device (120) can determine the distance between the support chuck (610) and the plate (620) based on at least some of the semiconductor process recipe information, information related to the specifications of a plurality of light absorption parts (611_1, 611_2, 611_3, 611_4), and information related to the specifications of a plurality of lasers (621_1, 621_2, 621_3, 621_4) included in the plate (620).

[0086] Additionally, in an embodiment, when a substrate processing device (600) is controlled to perform a heating process on a substrate (SUB) placed on a support chuck (610) by an electronic device (120, see FIG. 1) according to an embodiment of the present disclosure, the electronic device (120) can determine whether to output and the output wavelength for each of the plurality of lasers (621_1, 621_2, 621_3, 621_4) based on at least some of semiconductor process recipe information, information related to the specifications of a plurality of light absorbing parts (611_1, 611_2, 611_3, 611_4) and information related to the specifications of a plurality of lasers (621_1, 621_2, 621_3, 621_4) included in a plate (620).

[0087] In an embodiment, the semiconductor process recipe information may include at least some of the semiconductor process procedure information and the heating temperature information for the heating process, the information related to the specifications of the plurality of light absorbing parts (611_1, 611_2, 611_3, 611_4) may include light absorption rate information for each of the plurality of light absorbing parts (611_1, 611_2, 611_3, 611_4), and the information related to the specifications of the plurality of lasers (621_1, 621_2, 621_3, 621_4) may include output wavelength range information for each of the plurality of lasers (621_1, 621_2, 621_3, 621_4).

[0088] As a specific example, the heating process performed by the substrate processing device (600) may include at least one of a pre-heating process, a soaking process, and a wetting process, and in this case, the semiconductor process recipe information may include at least one of a first heating temperature information for the pre-heating process, a second heating temperature information for the soaking process, and a third heating temperature information for the wetting process. When performing a preheat treatment process, the electronic device (120) can determine a first separation distance between the support chuck (610) and the plate (620) for performing the preheat treatment process and a first output wavelength of a plurality of lasers (621_1, 621_2, 621_3, 621_4); when performing a soaking process, the electronic device (120) can determine a second separation distance between the support chuck (610) and the plate (620) for performing the soaking process and a second output wavelength of a plurality of lasers (621_1, 621_2, 621_3, 621_4); and when performing a wetting process, the electronic device (120) can determine a third separation distance between the support chuck (610) and the plate (620) for performing the wetting process and a third output of a plurality of lasers (621_1, 621_2, 621_3, 621_4). The wavelength can be determined.

[0089] The first heating temperature for the preheating process may be relatively lower than the second heating temperature for the soaking process and the third heating temperature for the wetting process, and the second heating temperature for the soaking process may be relatively lower than the third heating temperature for the wetting process. Accordingly, the first separation distance may be farther than the second separation distance and the third separation distance, and the second separation distance may be farther than the third separation distance. Additionally, the first output wavelength may be longer than the second output wavelength and the third output wavelength, and the second output wavelength may be longer than the third output wavelength.

[0090] Meanwhile, in some embodiments, the output status and output wavelength for each of the plurality of lasers (621_1, 621_2, 621_3, 621_4) may be determined differently. For example, when performing a pre-heat treatment process, the first laser (621_1) and the third laser (621_3) may be set to irradiate laser light of a first output wavelength, while the second laser (621_2) and the fourth laser (621_4) may be set not to irradiate laser light. In this case, the first laser (621_1) may be set to irradiate laser light to the first light absorption part (611_1) and the second light absorption part (611_2), and the third laser (621_3) may be set to irradiate laser light to the third light absorption part (611_3) and the fourth light absorption part (611_4). As another example, when performing a preheat treatment process, the first laser (621_1) and the fourth laser (621_4) are set to irradiate laser light of a first output wavelength, but the second laser (621_2) and the third laser (621_3) may be set to irradiate laser light of a second output wavelength. However, for convenience of explanation, in the embodiment described below, it is assumed that all of the plurality of lasers (621_1, 621_2, 621_3, 621_4) irradiate laser light of the same output wavelength.

[0091] When performing a pre-heat treatment process on a substrate (SUB), the electronic device (120) can control the support (630) so that the support chuck (610) and the plate (620) are positioned apart by a first separation distance. When the distance between the support chuck (610) and the plate (620) reaches the first separation distance, the electronic device (120) can control the plurality of lasers (621_1, 621_2, 621_3, 621_4) so ​​that the plurality of lasers (621_1, 621_2, 621_3, 621_4) irradiate laser light of a first output wavelength. Although not shown, a temperature sensor included in the support chuck (610) can measure the temperature of the substrate (SUB), and when it is confirmed that the temperature of the substrate (SUB) has reached a first heating temperature, the electronic device (120) can control the plurality of lasers (621_1, 621_2, 621_3, 621_4) to irradiate laser light of a first output wavelength from the plurality of lasers (621_1, 621_2, 621_3, 621_4) for a first time determined based on at least some of the semiconductor process recipe information and the status information of the substrate processing device (600), and after the first time, the electronic device (120) can terminate the pre-heat treatment process of the substrate processing device (600).

[0092] When performing a soaking process on a substrate (SUB), the electronic device (120) can control the support (630) so that the support chuck (610) and the plate (620) are positioned apart by a second separation distance, and when the distance between the support chuck (610) and the plate (620) reaches the second separation distance, the electronic device (120) can control the plurality of lasers (621_1, 621_2, 621_3, 621_4) so ​​that the plurality of lasers irradiate laser light of a second output wavelength for a second time determined based on at least some of the semiconductor process recipe information and the status information of the substrate processing device (600), and the soaking process of the substrate processing device (600) can be terminated after the second time.

[0093] Meanwhile, when performing a wetting process on a substrate, the electronic device (120) can control the support (630) so that the support chuck (610) and the plate (620) are positioned apart by a third separation distance, and when the distance between the support chuck (610) and the plate (620) reaches the third separation distance, the electronic device (120) can control the plurality of lasers (621_1, 621_2, 621_3, 621_4) so ​​that the plurality of lasers irradiate laser light of a third output wavelength for a third time determined based on at least some of the semiconductor process recipe information and the status information of the substrate processing device (600), and the wetting process of the substrate processing device (600) can be terminated after the third time.

[0094] According to an embodiment of the present disclosure, laser light irradiated from a plurality of lasers (621_1, 621_2, 621_3, 621_4) based on whether the lasers are output and the output wavelength for each of the plurality of lasers (621_1, 621_2, 621_3, 621_4) determined according to the method described above can be absorbed by at least some of the plurality of light absorption parts (611_1, 611_2, 611_3, 611_4) corresponding to each of the plurality of lasers (621_1, 621_2, 621_3, 621_4), and thermal energy based on the laser light absorbed by the plurality of light absorption parts (611_1, 611_2, 611_3, 611_4) can be conducted to a substrate (SUB) on the support chuck (610) through the support chuck (610).

[0095] Meanwhile, according to some embodiments of the present disclosure, when a substrate processing device (600) is controlled by an electronic device (120) according to an embodiment of the present disclosure to perform a heating process on a substrate (SUB) placed on a support chuck (610), the electronic device (120) can determine the output direction for each of the plurality of lasers (621_1, 621_2, 621_3, 621_4) based on at least some of semiconductor process recipe information, information related to the specifications of a plurality of light absorption parts (611_1, 611_2, 611_3, 611_4), and information related to the specifications of a plurality of lasers (621_1, 621_2, 621_3, 621_4) included in a plate (620). Depending on the output direction for each of the plurality of lasers (621_1, 621_2, 621_3, 621_4), the amount of laser light energy absorbed from at least one light absorption part (at least one of 611_1, 611_2, 611_3, 611_4) corresponding to each of the plurality of lasers (621_1, 621_2, 621_3, 621_4) may differ. Specifically, such an embodiment may be applied for region-specific temperature control of a substrate (SUB).

[0096] For example, when laser light of the Nth output wavelength irradiated from the first laser (621_1) is irradiated in a direction orthogonal to the first light absorption unit (611_1), laser light of the Nth output wavelength irradiated from the second laser (621_2) is irradiated in a 45° direction to the second light absorption unit (611_2), laser light of the Nth output wavelength irradiated from the third laser (621_3) is irradiated in a 45° direction to the third light absorption unit (611_3), and laser light of the Nth output wavelength irradiated from the fourth laser (621_4) is irradiated in a direction orthogonal to the fourth light absorption unit (611_4), the amount of heat absorbed from the first light absorption unit (611_3) and the fourth light absorption unit (611_4) and the amount of heat absorbed from the second light absorption unit (611_2) and the third light absorption unit (611_3) may be different. By adjusting the output direction in this way, the substrate processing device (600) can minimize thermal imbalance according to the positional relationship of a plurality of lasers (621_1, 621_2, 621_3, 621_4) and a plurality of light absorption parts (611_1, 611_2, 611_3, 611_4). Furthermore, by adjusting the output direction in this way, the substrate processing device (600) can control the temperature of each region of the substrate (SUB) placed on the support chuck (610).

[0097] FIG. 7 is a flowchart illustrating the operation method of a substrate processing apparatus (110, see FIG. 1) for performing a heating process according to an embodiment of the present disclosure.

[0098] In step S710, the substrate processing device (110) according to an embodiment of the present disclosure can control the laser setting by an electronic device (120, see FIG. 2). Specifically, the electronic device (120) determines at least one of whether to output, the output wavelength, and the output direction for each of the plurality of lasers (221_1, 221_2, 221_3, 221_4) based on at least some of semiconductor process recipe information, information related to the specifications of a plurality of light absorbing parts (211_1, 211_2, 211_3, 211_4, see FIG. 2), and each of the plurality of lasers (221_1, 221_2, 221_3, 221_4) included in the substrate processing device (110) can prepare a heating process based on the determined output setting.

[0099] In step S720, the substrate processing apparatus (110) according to an embodiment of the present disclosure may raise the support chuck (210) in correspondence with the spacing distance between the support chuck (210, see FIG. 2) and the plate (220) determined by the electronic device (120). The spacing distance between the support chuck (210) and the plate (220) may be determined based on at least some of the semiconductor process recipe information, information related to the specifications of a plurality of light absorption parts (211_1, 211_2, 211_3, 211_4), and information related to the specifications of a plurality of lasers (221_1, 221_2, 221_3, 221_4) included in the plate (220). In some embodiments, step S720 may be performed in parallel with the above-described step S710.

[0100] In step S730, the substrate processing apparatus (110) according to an embodiment of the present disclosure may perform laser light irradiation of each of the plurality of lasers (221_1, 221_2, 221_3, 221_4) based on the output setting determined in step S710 described above. Each of the plurality of lasers (221_1, 221_2, 221_3, 221_4) may irradiate laser light onto at least one light absorption part (211_1, 211_2, 211_3, 211_4, see FIG. 2) corresponding to each of the plurality of lasers (221_1, 221_2, 221_3, 221_4).

[0101] In step S740, the substrate processing apparatus (110) according to an embodiment of the present disclosure can determine whether the time during which a heating process by a plurality of lasers (221_1, 221_2, 221_3, 221_4) is performed is greater than or equal to a first threshold time. The first threshold time may be determined by an electronic device (120) based on at least some of semiconductor process recipe information, information related to the specifications of a plurality of light absorbing parts (211_1, 211_2, 211_3, 211_4), and information related to the specifications of a plurality of lasers (221_1, 221_2, 221_3, 221_4) included in a plate (220). If the time during which a heating process by a plurality of lasers (221_1, 221_2, 221_3, 221_4) is performed is less than the first threshold time, the procedure may return to step S730. Meanwhile, if the time during which the heating process by multiple lasers (221_1, 221_2, 221_3, 221_4) is performed is longer than the first critical time, the procedure may be terminated.

[0102] FIG. 8 is a drawing for explaining the cooling process operation of a substrate processing device (800) according to an embodiment of the present disclosure.

[0103] The substrate processing device (800) illustrated in FIG. 8 may correspond to the substrate processing device (110, see FIG. 1) described above in FIG. 1. When the substrate processing device (800) is controlled to perform a cooling process for a substrate (SUB) placed on a support chuck (810) by an electronic device (120, see FIG. 1) according to an embodiment of the present disclosure, the support member (830) may be lowered by the electronic device (120) so that one side of the support chuck (810) and one side of the plate (820) may come into contact. As the support member (830) is lowered, the support chuck (810) may be lowered relative to the position of the plate (820). In an embodiment, the electronic device (120) can control the substrate processing device (800) to supply a refrigerant to the inlet of the cooling line (822) based on at least some of the semiconductor process recipe information, information related to the specifications of the plate (820), information related to the specifications of the cooling line (822), and refrigerant information used in the substrate processing device (800).

[0104] When the support chuck (810) and the plate (820) come into contact, the thermal energy of the substrate (SUB) can be conducted to the support chuck (810) supporting the substrate (SUB), and the thermal energy conducted to the support chuck (810) can be absorbed by the refrigerant flowing along the cooling line (822) included in the plate (820). Although not illustrated, a temperature sensor included in the support chuck (610) can measure the temperature of the substrate (SUB), and when it is confirmed that the temperature of the substrate (SUB) has reached the cooling temperature, the electronic device (120) can control the substrate processing device (800) so that the refrigerant can flow through the cooling line (822) for a fourth time determined based on at least some of the semiconductor process recipe information and the status information of the substrate processing device (600), and after the fourth time, the electronic device (120) can terminate the cooling process of the substrate processing device (800).

[0105] FIG. 9 is a flowchart illustrating the operation method of a substrate processing apparatus (110, see FIG. 1) for performing a cooling process according to an embodiment of the present disclosure.

[0106] In step S910, the substrate processing device (110) according to an embodiment of the present disclosure can control the setting of the cooling line (222, see FIG. 2) by means of an electronic device (120, see FIG. 2). Specifically, the electronic device (120) can control the setting of the cooling line (222) based on at least some of semiconductor process recipe information, information related to the specifications of the plate (220, see FIG. 2) included in the substrate processing device (110), information related to the specifications of the cooling line (222) included in the substrate processing device (110), and refrigerant information used in the substrate processing device (110). For example, the electronic device (120) can determine at least one of the type of refrigerant to reach a specific cooling temperature, the amount of refrigerant to reach a specific cooling temperature, and the refrigerant supply rate to reach a specific cooling temperature based on at least some of the semiconductor process recipe information, information related to the specifications of the plate (220) included in the substrate processing device (110), information related to the specifications of the cooling line (222) included in the substrate processing device (110), and the refrigerant information used in the substrate processing device (110). The cooling line (222) included in the substrate processing device (110) can prepare a cooling process based on the settings of the cooling line (222) determined by the electronic device (120).

[0107] In step S920, the substrate processing device (110) according to an embodiment of the present disclosure may lower the support chuck (210) so that one surface of the support chuck (210) contacts one surface of the plate (220). In some embodiments, step S920 may be performed in parallel with step S910.

[0108] In step S930, the substrate processing device (110) according to the embodiment of the present disclosure may operate the cooling line (220) based on the setting of the cooling line (222) determined in step S910 described above. Specifically, the substrate processing device (110) may supply a refrigerant to the cooling line (220) based on the setting of the cooling line (222), and the supply of refrigerant to the inlet of the cooling line (220) may be performed by opening a first valve placed at the inlet of the cooling line (222). Meanwhile, in order for the refrigerant supplied to the cooling line (222) to remain within the cooling line (222), a second valve placed at the inlet of the cooling line (222) may be closed, and the discharge of refrigerant to the outlet of the cooling line (220) may be performed by opening the second valve placed at the outlet of the cooling line (222).

[0109] In step S940, the substrate processing device (110) according to an embodiment of the present disclosure may determine whether the time during which the cooling process by the cooling line (222) is performed is greater than or equal to a second threshold time. The second threshold time may be determined by the electronic device (120) based on at least some of the semiconductor process recipe information, information related to the specifications of the plate (220) included in the substrate processing device (110), information related to the specifications of the cooling line (222) included in the substrate processing device (110), and information on the refrigerant used in the substrate processing device (110). If the time during which the cooling process by the cooling line (222) is performed is less than the second threshold time, the procedure may return to step S930. Meanwhile, if the time during which the cooling process by the cooling line (222) is performed is greater than or equal to the second threshold time, the procedure may be terminated.

[0110] FIG. 10a is a drawing for explaining the heating process of a substrate processing device (1000a) according to another embodiment of the present disclosure. FIG. 10b is a drawing for explaining the cooling process of a substrate processing device (1000b) according to another embodiment of the present disclosure.

[0111] The substrate processing device (1000a and 1000b) illustrated in FIGS. 10a and 10b may correspond to the substrate processing device (110, see FIG. 1) described above in FIG. 1. However, unlike the substrate processing device (200, see FIG. 2) illustrated in FIG. 2, the position of the support chuck (1010) in the substrate processing device (1000a and 1000b) illustrated in FIG. 10a and 10b is fixed within the chamber, and the position of the plate (1020) may be changed according to the up-and-down movement of the support (1030). In the substrate processing device (1000a and 1000b) illustrated in FIG. 10a and 10b, one side of the support (230) may be fixed in a form that is received or inserted into a groove or recess formed in the center of the plate (1020). The support (1030) can perform up-and-down movement under the control of an electronic device (120, see FIG. 1).

[0112] Referring to FIG. 10a, when a substrate processing device (1000a) is controlled by an electronic device (120) according to an embodiment of the present disclosure to perform a heating process on a substrate (SUB) placed on a support chuck (1010), the support member (1030) may be lowered so that the support chuck (1010) and the plate (1020) may be separated by a separation distance determined by the electronic device (120). As the support member (1030) is lowered, the plate (1020) may be lowered relative to the position of the support chuck (1010). In the embodiment illustrated in FIG. 10a, the electronic device (120) [is based on] at least some of the semiconductor process recipe information, information related to the specifications of a plurality of light absorbing parts (1011_1, 1011_2, 1011_3, 1011_4), and information related to the specifications of a plurality of lasers (1021_1, 1021_2, 1021_3, 1021_4) included in the plate (1020), the separation distance between the support chuck (1010) and the plate (1020), whether each of the plurality of lasers (1021_1, 1021_2, 1021_3, 1021_4) is output, the output wavelength of each of the plurality of lasers (1021_1, 1021_2, 1021_3, 1021_4), and the plurality of lasers (1021_1, 1021_2, 1021_3, 1021_4) At least one of each output direction can be determined.

[0113] According to an embodiment, when the support (1030) is lowered so that the support chuck (1010) and the plate (1020) are spaced apart by a distance determined by the electronic device (120), each of the plurality of lasers (1021_1, 1021_2, 1021_3, 1021_4) can irradiate laser light to at least some of the plurality of light absorption parts (1011_1, 1011_2, 1011_3, 1011_4) corresponding to each of the plurality of lasers (1021_1, 1021_2, 1021_3, 1021_4) by the electronic device (120) based on set output information. In some embodiments, even while the support (1030) is descending, each of the plurality of lasers (1021_1, 1021_2, 1021_3, 1021_4) can irradiate laser light to at least some of the plurality of light absorption parts (1011_1, 1011_2, 1011_3, 1011_4) corresponding to each of the plurality of lasers (1021_1, 1021_2, 1021_3, 1021_4) by means of an electronic device (120) based on set output information.

[0114] Referring to FIG. 10b, when a substrate processing device (1000b) is controlled by an electronic device (120) according to an embodiment of the present disclosure to perform a cooling process for a substrate (SUB) placed on a support chuck (1010), a support member (1030) may be raised by the electronic device (120) so that the support chuck (1010) and the plate (1020) can come into contact. As the support member (1030) is raised, the plate (1020) may be raised relative to the position of the support chuck (1010). In the embodiment illustrated in FIG. 10b, the electronic device (120) may supply a refrigerant to the inlet of the cooling line (1022) based on at least some of the semiconductor process recipe information, information related to the specifications of the plate (1020), information related to the specifications of the cooling line (1022), and refrigerant information used in the substrate processing device (1000b).

[0115] FIG. 11 is a block diagram illustrating an electronic device (1100) according to an embodiment of the present disclosure.

[0116] The electronic device (1100) illustrated in FIG. 11 may correspond to the electronic device (120, see FIG. 1) described above in FIG. 1, and with reference to FIG. 11, the electronic device (1100) according to an embodiment of the present disclosure may include a transceiver (1110), a processor (1120), and a memory (1130).

[0117] The electronic device (1100) is connected to an external device through a transceiver (1110) and can exchange data.

[0118] The processor (1120) may perform an operation performed by at least one device described through FIGS. 1 to 10b above, or perform at least one method described through FIGS. 1 to 10b. Additionally, the processor (1120) may execute a program to perform an operation performed by at least one device described through FIGS. 1 to 10b above or at least one method described through FIGS. 1 to 10b above, and may process information to perform an operation performed by at least one device described through FIGS. 1 to 10b above or at least one method described through FIGS. 1 to 10b above, and control a substrate processing device (110, see FIG. 1) based on the processed information.

[0119] The memory (1130) may include at least one of volatile memory and non-volatile memory and may store code of a program executed by the processor (1120).

[0120] Meanwhile, the embodiments disclosed in this specification may be implemented in the form of a recording medium that stores instructions executable by a computer. The instructions may be stored in the form of program code and, when executed by a processor, may generate a program module to perform the operations of the disclosed embodiments. The recording medium may be implemented as a computer-readable recording medium. A computer-readable recording medium may include all types of recording media that store instructions decipherable by a computer. Examples include ROM, RAM, magnetic tape, magnetic disk, flash memory, optical data storage devices, etc.

[0121] The above descriptions are specific embodiments for carrying out the present disclosure. The present disclosure will include not only the embodiments described above, but also embodiments that can be simply modified or easily modified. Furthermore, the present disclosure will include technologies that can be easily modified and implemented using the embodiments described above. Accordingly, the scope of the present disclosure should not be limited to the embodiments described above, but should be defined by the claims set forth below as well as equivalents to the claims of the present disclosure.

[0122] Meanwhile, the present disclosure is derived from research conducted as part of the Ministry of Science and ICT of Korea’s "Development of Core Technologies for High-Performance Semiconductor High-Efficiency Micro-Pitch Microbump Bonding Process Equipment" (Research Project No.: RS-2024-00431837, Unique Project No.: 2710018701, Project No.: 00431837, Project Management (Specialized) Agency: National Research Foundation of Korea, Research Project Name: Development of Core Technologies for Advanced Semiconductor Packaging, Project Performing Agency: PSK Holdings Co., Ltd., Research Period: May 1, 2024 – January 31, 2025). Korea Information, the provider of the project, has no proprietary interest in any aspect of the present disclosure.

Claims

1. A support chuck comprising at least one light-absorbing portion; A plate comprising at least one laser and cooling line; and A support member that penetrates a through hole formed in the center of the plate and has one side received in a groove formed in the center of the support chuck, When performing a first process for raising the temperature of a semiconductor substrate disposed on the support chuck, the support chuck and the plate are separated as the support rises, and the at least one laser irradiates laser light onto the at least one light absorption part. A substrate processing device that, when performing a second process for lowering the temperature of the semiconductor substrate, the support chuck and the plate come into contact as the support lowers, and supplies a refrigerant through the cooling line.

2. In Paragraph 1, When performing the first process above, the support rises in correspondence with a separation distance determined based on at least some of semiconductor process recipe information, information related to the specifications of the at least one light absorbing part, and information related to the specifications of the at least one laser.

3. In Paragraph 1, A substrate processing apparatus in which, when the above-mentioned support chuck includes a plurality of light absorbing parts and the above-mentioned plate includes a plurality of lasers, each of the plurality of lasers irradiates the laser light to at least some of the plurality of light absorbing parts corresponding to each of the plurality of lasers based on an output wavelength determined based on at least some of semiconductor process recipe information, information related to the specifications of each of the plurality of light absorbing parts, and information related to the specifications of each of the plurality of lasers.

4. In Paragraph 3, A substrate processing device that irradiates laser light onto at least some of the plurality of light absorbers corresponding to each of the plurality of lasers based on an output direction determined based on at least some of the semiconductor process recipe information, information related to the specifications of each of the plurality of light absorbers, and information related to the specifications of each of the plurality of lasers.

5. In Paragraph 1, The above cooling line is a substrate processing device that performs refrigerant supply based on at least some of semiconductor process recipe information, information related to the specifications of the plate, information related to the specifications of the cooling line, and information on the refrigerant used.

6. In Paragraph 1, The above support chuck is a substrate processing device further comprising a temperature sensor for measuring the temperature of the semiconductor substrate.

7. In Paragraph 1, A substrate processing device in which the above cooling line is formed as a first type in which an inlet for supplying the refrigerant and an outlet for discharging the refrigerant are integrated, or a second type in which the inlet and the outlet are independent.

8. In Paragraph 1, The above refrigerant is a substrate processing device comprising at least one of a hydrocarbon, a halocarbon, an organic compound, and an inorganic compound.

9. A support chuck comprising at least one light-absorbing part and fixed in position within a chamber; A plate comprising at least one laser and cooling line; and It includes a support member received in a groove formed in the central part of the plate, When performing a first process for raising the temperature of a semiconductor substrate disposed on the support chuck, the support chuck and the plate are separated as the support lowers, and the at least one laser irradiates laser light onto the at least one light absorption part. A substrate processing device that, when performing a second process for lowering the temperature of the semiconductor substrate, the support chuck and the plate come into contact as the support rises, and supplies a refrigerant through the cooling line.

10. A method of operating a substrate processing device for performing temperature control on a semiconductor substrate, A step of placing the semiconductor substrate introduced from the outside onto a support chuck; A step of separating the support chuck and the plate to perform a first process for raising the temperature of the semiconductor substrate, and irradiating laser light onto at least one light-absorbing portion included in the support chuck using at least one laser included in the plate; and A method of operation comprising the step of bringing the support chuck and the plate into contact to perform a second process for lowering the temperature of the semiconductor substrate, and supplying a refrigerant through a cooling line included in the plate.

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