Spin current equation using quantum spin hall effect, and quantum device using same

Abstract

The present invention relates to a spin current equation using the quantum spin Hall effect, and a quantum device using same, and may be configured to comprise: a substrate (100); an amorphous SiOC thin film (200) disposed on the substrate (100); a source electrode (301) disposed on the amorphous SiOC thin film (200); a drain electrode (302) disposed on the amorphous SiOC thin film (200); and a gate electrode (303) disposed on the lower portion of the substrate (100).

Description

Spin current equation using the quantum spin Hall effect and quantum device using the same

[0001] The present invention relates to a spin current equation utilizing the quantum spin Hall effect that prevents leakage current generation by utilizing the spin current generated in amorphous SiOC, and to a quantum device utilizing the same.

[0002] When energy is quantized, it enables a better understanding of natural phenomena and the development of cutting-edge technologies. In particular, it can play a crucial role as a core element of modern science and technology, such as semiconductors, lasers, and quantum computing. The quantization of energy means that energy does not possess continuous values, but rather can exist only in specific discontinuous values ​​(quantum states). This principle is one of the fundamental concepts of quantum mechanics and offers the advantage of enabling the understanding and utilization of natural phenomena.

[0003] The advantages of quantization are: (1) It provides stability and precision. Since energy states are discontinuous, the system can remain in a specific state and maintain stability. For example, the reason electrons in atoms can stay in specific orbits is that energy is quantized. Quantization is utilized to generate specific energy with great precision in devices such as lasers. (2) It enables the prediction of physical phenomena. Quantized energy is essential for explaining and predicting the characteristics of atoms and molecules. Spectral lines (e.g., absorption spectra, emission spectra) are understood as phenomena where energy is quantized. (3) It enables efficient energy transfer. Because the energy of electromagnetic waves or photons is quantized, it is efficient to transfer or change energy to a specific magnitude. This plays an important role in solar panels, LEDs, and semiconductor technology. (4) It enables the design of the microscopic world. By utilizing quantization, precise control becomes possible in the nanometer-level world. Consequently, advanced technologies such as transistors, quantum computers, and nanotechnology are developed. (5) It minimizes energy waste. Since energy is quantized, unnecessary energy loss can be reduced. The bandgap structure of semiconductor devices can be designed so that electrons do not conduct unless they absorb or emit specific energy. (6) Understanding the energy levels and electronic structures of materials can be utilized in the development of new materials. Quantum mechanics can be used to understand microscopic phenomena that are difficult to explain with classical physics, and it provides important clues to revealing the mysteries of the universe, such as the initial state of the universe, black holes, and dark matter.

[0004] Equations that quantize energy include the Schrödinger equation, Bohr's atomic energy level model for calculating the ground state energy of a hydrogen atom, and Planck's quantization formula (E=hf). Bohr's model is an early model that explains quantized orbital energies.

[0005] Models for quantizing spin currents produced by antiparticles (fermions) include gauge lattice theory and Chern topological insulator theory. While gauge lattice theory suffers from increased computational costs due to fermion doubling, Chern topological insulator theory is the method used in this invention, as it is a theory in which spin currents are generated without a magnetic field. Amorphous SiOC semiconductor devices satisfy the requirements of Chern topological insulators because spin currents are generated at room temperature without the need for an electric field.

[0006] There are four types of Dirac fermions generated by the Dirac equation. Spin currents generated in amorphous SiOCs are classified into Majorana fermions, Dirac fermions, Weyl fermions, and neutrino fermions based on their electrical properties. Since spin currents, composed of these four components, possess only energy and no mass, they are independent of ohmic resistance. Spin currents exhibit a characteristic inversely proportional to voltage and current, which can be explained by Hall resistance.

[0007] The quantum Hall effect is a method for demonstrating quantization, and it includes the quantum spin Hall effect, integer quantum Hall effect, and fractional quantum Hall effect.

[0008] The Zero Bias Point (ZBP) is a phenomenon in which current is generated upward despite the voltage being zero, and it is a representative characteristic of the quantum spin Hall effect. The ZBP cannot be explained by ohmic resistance but can be explained by Hall resistance. Ordinary current is generated in ohmic resistance, while spin current is generated in Hall resistance. Therefore, to create quantum devices capable of quantizing energy, a spin current equation utilizing Hall resistance is required. There are four solutions satisfying the Dirac equation: Majorana fermions, Dirac fermions, Weyl fermions, and neutrino fermions. Fermions represent spin currents, but Majorana fermions have never been experimentally discovered, and the quantum spin Hall effect, which occurs at room temperature even in the absence of a magnetic field, has also not been experimentally proven. Since Majorana fermions are neutral, a zero bias point (ZBP) must be observed; if a ZBP appears in the spin current, the quantum spin Hall effect occurs. Relatively many experimental results regarding neutrinofermions, Weyl fermions, and Weyl metals have been reported. However, sub-zero temperatures and strong magnetic fields are required to observe Weyl fermions or Weyl metals. To fabricate quantum devices, a topological insulator that generates spin current at room temperature must be identified, and Majorana fermions must emerge from this topological insulator. Since the quantum spin Hall effect can be demonstrated at the ZBP of Majorana fermions, the spin current equation can be derived.

[0009] The present invention has been devised to solve the aforementioned problems. The quantum device according to the present invention utilizes a spin current generated in amorphous SiOC to derive a spin current equation satisfying the quantum spin Hall effect, and aims to provide a quantum device satisfying the spin current equation and a method for manufacturing it.

[0010] A quantum device utilizing the quantum spin Hall effect according to an embodiment of the present invention for solving the aforementioned problem comprises: a substrate (100); and an amorphous SiOC thin film (200) disposed on the substrate (100).

[0011] The above amorphous SiOC thin film (200) is composed of a quantum spin current equation using the quantum spin Hall effect and a quantum device using the same, characterized by satisfying the following mathematical formulas 1 and 2.

[0012] [Mathematical Formula 1]

[0013] R xy = V × I

[0014] [Mathematical Formula 2]

[0015] R xy = υR H

[0016] Here, R xy ε is the spin Hall resistance of the amorphous SiOC thin film (200), V is the voltage applied to the amorphous SiOC thin film (200), I is the current applied to the amorphous SiOC thin film (200), R H = (R H = 2.58830865234 × 10 4 ) The Hall resistance of the amorphous SiOC thin film (200), υ, is an integer or a fraction.

[0017] According to another embodiment of the present invention, the device may further comprise a source electrode (301) disposed on the amorphous SiOC thin film (200); a drain electrode (302) disposed on the amorphous SiOC thin film (200); and a gate electrode (303) disposed on the lower part of the substrate (100).

[0018] According to another embodiment of the present invention, the apparatus may further comprise an electrode protection film (400) disposed between the source electrode (301) and the amorphous SiOC film (200), and between the drain electrode (302) and the amorphous SiOC film (200), respectively.

[0019] According to another embodiment of the present invention, the device may further comprise an electrode protection film (403) disposed between the substrate (100) and the gate electrode (303).

[0020] According to another embodiment of the present invention, it may be configured to include a source electrode (301) disposed on the amorphous SiOC thin film (200); a drain electrode (302) disposed on the amorphous SiOC thin film (200); and a gate electrode (303) disposed on the substrate (100).

[0021] According to another embodiment of the present invention, the apparatus may further comprise an electrode protection film (400) disposed between the source electrode (301) and the amorphous SiOC film (200), and between the drain electrode (302) and the amorphous SiOC film (200), respectively.

[0022] According to another embodiment of the present invention, the device may further comprise an electrode protection film (403) disposed between the substrate (100) and the gate electrode (303).

[0023] According to another embodiment of the present invention, the device may further comprise: a source electrode (301) disposed on the amorphous SiOC thin film (200); a drain electrode (302) disposed on the amorphous SiOC thin film (200); a gate electrode (303) disposed on the lower part of the substrate (100); and a sensory receptor contact portion (500) formed on the substrate (100).

[0024] The spin current equation utilizing the quantum spin Hall effect and the quantum device utilizing the same according to the present invention comprises an amorphous SiOC thin film composed of an amorphous SiOC insulator in which a spin current is generated even in the absence of a magnetic field at room temperature, 10 -6 A spin current smaller than A is generated, and at this time, a spin current inversely proportional to the voltage and current is generated, so no leakage current is generated.

[0025] As such, the spin current equation utilizing the quantum spin Hall effect according to the present invention and the quantum device utilizing the same can replace SiO2, which is problematic due to leakage current in semiconductor processes, through an amorphous SiOC thin film, and can be used instead of a SiO2 gate insulating film, and can be used as an interlayer protective film in OLED processes, a micro LED, an interlayer protective film in memory device processes, and a metal protective film.

[0026] Figure 1 is a graph illustrating the IDSxy-VGS spin current and quantum spin Hall effect of a Majorana fermion according to an embodiment of the present invention.

[0027] FIG. 1 is a graph showing the capacitance of a Majorana fermion according to an embodiment of the present invention.

[0028] FIG. 3 is a graph showing the energy quantized voltage of a Majorana fermion according to an embodiment of the present invention.

[0029] Figure 4 is a graph illustrating the IDSxy-VGS spin current and quantum spin Hall effect of a neutrinofermion according to an embodiment of the present invention.

[0030] FIG. 5 is a graph illustrating the capacitance and quantum well effect of a neutrinofermion according to an embodiment of the present invention.

[0031] FIG. 6 is a graph showing the energy quantization voltage of a neutrinofermion according to an embodiment of the present invention.

[0032] FIG. 7 is a graph illustrating the characteristic that the ZBP (zero bias point) appears at the 0V position as the resistance of a quantum device according to an embodiment of the present invention increases, and the ZBP shifts as the resistance decreases.

[0033] FIG. 8 is I of a quantum device according to an embodiment of the present invention DS xy -V GS This is a graph to explain spin current, resistance, capacitance, and energy quantization.

[0034] FIG. 9 is a cross-sectional view of a quantum device using a spin current equation utilizing the quantum spin Hall effect according to an embodiment of the present invention.

[0035] FIG. 10 is a cross-sectional view of a quantum device using a spin current equation utilizing the quantum spin Hall effect according to another embodiment of the present invention.

[0036] FIG. 11 is a cross-sectional view of a quantum device using a spin current equation utilizing the quantum spin Hall effect according to another embodiment of the present invention.

[0037] FIG. 12 is a cross-sectional view of a quantum device using a spin current equation utilizing the quantum spin Hall effect according to another embodiment of the present invention.

[0038] FIG. 13 is a cross-sectional view of a quantum device using a spin current equation utilizing the quantum spin Hall effect according to another embodiment of the present invention.

[0039] B. Specific embodiments are illustrated in the drawings and described in detail in the description of the invention. However, this is not intended to limit the invention to specific embodiments and should be understood to include all modifications, equivalents, and substitutions that fall within the spirit and scope of the invention.

[0040] However, in describing the embodiments, if it is determined that a detailed description of related known functions or configurations could unnecessarily obscure the essence of the invention, such detailed description is omitted. Additionally, the sizes of each component in the drawings may be exaggerated for illustrative purposes and do not represent the actual sizes applied.

[0041] Furthermore, throughout the specification, when a component is referred to as being "connected" or "joined" with another component, it should be understood that the component may be directly connected or joined to the other component, but unless specifically stated otherwise, it may also be connected or joined through an intermediate component. Additionally, throughout the specification, when a part is described as "including" a component, unless specifically stated otherwise, this means that it may include additional components rather than excluding other components.

[0042] Since the quantum spin Hall effect, integer quantum Hall effect, and fractional quantum Hall effect are phenomena that cannot be explained by ohmic resistance, the Hall resistance (h / e 2 The von clinching constant (=25812.807 Ω) was defined. Since it is different from ohmic resistance, the Hall resistance is inversely proportional to voltage and current. The quantum Hall effect is a phenomenon caused by spin current, and it is proven that the spin current is inversely proportional to voltage and current.

[0043] The quantum spin Hall effect is a phenomenon in which spin current is generated without a magnetic field. Fermions resulting from the quantum spin Hall effect were utilized to measure the spin current. Fermions of the quantum spin Hall effect were fabricated using semiconductor fabrication technology by depositing amorphous SiOC, a topological insulator that generates spin current without the need for a magnetic field, onto a substrate. The spin current and capacitance of the fermions were measured to determine the I / C ratio, and the Hall resistance (R) was calculated. H The quantum number for ) was calculated. The Zero Bias Point (ZBP) is V GS (-30V~30V) is used, and the bias voltage V is used to observe the quantization phenomenon. DS Measure the current value while varying to 0.001, 0.1, 1, 2, 3, 4, 5, 6, 7, 8, 9, and 10, calculate (I / C), and then V DS To quantize, the Hall resistance (R HDivided into ).

[0044] [Mathematical Formula 1]

[0045] R xy = V × I

[0046] [Mathematical Formula 2]

[0047]

[0048] [Mathematical Formula 3]

[0049]

[0050] [Mathematical Formula 4]

[0051]

[0052] [Mathematical Formula 5]

[0053] R xy = υR H

[0054]

[0055] Here, R xy is the spin Hall resistance of the amorphous SiOC thin film (200) and is the fermion resistance of the device, V is the voltage applied to the amorphous SiOC thin film (200), and I is the current applied to the amorphous SiOC thin film (200). (R H = 2.58830865234 × 10 4 As ), the Hall resistance υ of the amorphous SiOC thin film (200) is an integer or a fraction. Since the resistance of a fermion cannot be an absolute value but a relative value, the Hall resistance R H It must be a value proportional to.

[0056] From now on, with reference to FIGS. 1 to 8, we will explain the fermions of the quantum spin Hall effect by depositing a topological insulator amorphous SiOC that generates spin current onto a substrate and using semiconductor process technology.

[0057] FIG. 1 is I of Majoranafermion according to one embodiment of the present invention DS xy -V GSAs graphs to explain spin current and the quantum spin Hall effect, more specifically, FIG. 1(a) and FIG. 1(b) show the I of a Majorana fermion due to the quantum spin Hall effect. DS xy -V GS It is the spin current. In Fig. 1(c) and Fig. 1(d), V is the input voltage. DS V depending on the voltage GS = Represents the current value measured at 30V.

[0058] FIG. 2 is a graph showing the capacitance of a Majorana fermion according to an embodiment of the present invention.

[0059] FIG. 3 is a graph showing the energy quantized voltage of a Majorana fermion according to an embodiment of the present invention, wherein V DS This is a graph showing the quantized voltage (1 / Q) versus the voltage. Using the Majorana fermion of the quantum spin Hall effect, V DS It represents the quantized output value for the input. The graph shows the quantized output in proportion to the input.

[0060] FIG. 4 is I of a neutrinofermion according to an embodiment of the present invention DS xy -V GS As graphs to explain spin current and the quantum spin Hall effect, Figures 4(b) and 4(c) show V as the input voltage DS V depending on the voltage GS = Represents the current value measured at 30V.

[0061] FIG. 5 is a graph illustrating the capacitance and quantum well effect of a neutrinofermion according to an embodiment of the present invention.

[0062] FIG. 6 is a graph illustrating the energy quantization voltage of a neutrinofermion according to an embodiment of the present invention, more specifically V DS This is a graph showing the quantized voltage (1 / Q) versus the voltage. Using neutrinofermions of the quantum spin Hall effect, V DSIt represents the quantized output value for the input. The graph shows the quantized output in proportion to the input.

[0063] Figure 7(a) is the bias voltage V DS While increasing from 10V to 20V, I DS xy -V GS This is the result of measuring the spin current, and as shown in Fig. 7 (a), the current is also quantized while maintaining a constant value in a certain range.

[0064] FIG. 7(b) is a graph showing resistance, and as shown in FIG. 7(b), V GS As voltage increases, resistance decreases and V GS V to 0V GS When the voltage decreases, a peak (ZBP) where the resistance increases appears. Consequently, the spin current resistance exhibits ZBP characteristics. The characteristic that resistance decreases as the voltage increases is a phenomenon not observed in ohmic resistance. Additionally, Fig. 7(c) shows the capacitance of the amorphous SiOC quantum device. Fig. 7(d) shows V DS This is a graph showing the quantized voltage (1 / Q) versus the voltage. The graph shows V DS It displays a quantized output proportional to the input.

[0065] FIG. 8 is a graph illustrating the characteristic that when the resistance of a quantum device according to an embodiment of the present invention decreases, ZBP shifts and the quantization value increases.

[0066] Figure 8 shows that ZBP is resistant and moves to the right as resistance decreases.

[0067] FIG. 8 is I of a quantum device according to an embodiment of the present invention DS xy -V GS As a graph to explain spin current, resistance, capacitance, and energy quantization, more specifically, FIG. 8(a) is a bias voltage V DS While increasing from 10V to 20V, I DSxy -V GS This is the result of measuring the spin current, and Figure 8(b) is a graph showing resistance, where the resistance decreases as the bias voltage increases. The resistance of the spin current maintains a constant value during a certain period. This characteristic is a phenomenon not observed in ohmic resistance. Since the resistance is constant during a certain period, the current is also quantized while maintaining a constant value during a certain period, as shown in Figure 8(a).

[0068] In addition, Fig. 8(c) is the capacitance of the amorphous SiOC quantum device. Fig. 8(d) is V DS This is a graph showing the quantized voltage (1 / Q) versus the voltage. The graph shows V DS It displays a quantized output proportional to the input.

[0069] These results prove that amorphous SiOC is a quantum device. Furthermore, it serves as experimental evidence of the quantum spin Hall effect as a quantum device and demonstrates that amorphous SiOC is a topological insulator.

[0070]

[0071] FIG. 9 is a cross-sectional view of a quantum device using a spin current equation utilizing the quantum spin Hall effect according to an embodiment of the present invention.

[0072] As shown in FIG. 9, a spin current equation utilizing the quantum spin Hall effect according to one embodiment of the present invention and a quantum device utilizing the same are configured to include a substrate (100), an amorphous SiOC thin film (200), a source electrode (301), a drain electrode (302), and a gate electrode (303).

[0073] To explain in more detail, the amorphous SiOC thin film (200) is disposed on the substrate (100). In this way, the amorphous SiOC thin film (200) is composed of an amorphous SiOC insulator that generates a spin current even in the absence of a magnetic field at room temperature.

[0074] At this time, the amorphous SiOC thin film (200) may be composed of a SiOC material having a carbon content of less than 1%, and the substrate (100) may be composed of an n-type silicon wafer, a p-type silicon wafer, PET, PEN, or a glass substrate as a substrate used in a semiconductor process. In addition, the deposition equipment used when depositing the amorphous SiOC thin film (200) on the substrate (100) in the present invention may be an RF magnetron sputtering device, a CVD (Chemical Vapor Deposition) device, or an ALD (Atomic Layer Deposition) device.

[0075] Additionally, the source electrode (301) is disposed on the amorphous SiOC thin film (200), the drain electrode (302) is disposed on the amorphous SiOC thin film (200), and the gate electrode (303) is disposed on the lower part of the substrate (100).

[0076] Through such a configuration, the quantum device according to one embodiment of the present invention generates a spin current that is inversely proportional to the voltage and current.

[0077] Accordingly, the spin current equation utilizing the quantum spin Hall effect and the quantum device utilizing the same according to the present invention comprises an amorphous SiOC thin film composed of an amorphous SiOC insulator in which a spin current is generated even in the absence of a magnetic field at room temperature, 10 -6 A spin current smaller than A is generated, and at this time, a spin current inversely proportional to the voltage and current is generated, so no leakage current occurs.

[0078] As such, the spin current equation utilizing the quantum spin Hall effect according to the present invention and the quantum device utilizing the same can replace SiO2, which is problematic due to leakage current in semiconductor processes, through an amorphous SiOC thin film, and can be used instead of a SiO2 gate insulating film, and can be used as an interlayer protective film in OLED processes, a micro LED, an interlayer protective film in memory device processes, and a metal protective film.

[0079] FIG. 10 is a cross-sectional view of a quantum device using a spin current equation utilizing the quantum spin Hall effect according to another embodiment of the present invention.

[0080] As illustrated in FIG. 10, a spin current equation utilizing the quantum spin Hall effect and a quantum device utilizing the same according to another embodiment of the present invention are configured to include a substrate (100), an amorphous SiOC thin film (200), a source electrode (301), a drain electrode (302), a gate electrode (303), a first electrode protection thin film (400), and a second electrode protection thin film (403).

[0081] To explain in more detail, the amorphous SiOC thin film (200) is placed on the substrate (100).

[0082] Additionally, the source electrode (301) is disposed on the amorphous SiOC thin film (200), and the drain electrode (302) is also disposed on the amorphous SiOC thin film (200).

[0083] The gate electrode (303) is positioned on the lower part of the substrate (100).

[0084] Additionally, the first electrode protective film (400) is disposed between the source electrode (301) and the amorphous SiOC film (200), and between the drain electrode (302) and the amorphous SiOC film (200), respectively.

[0085] Additionally, the second electrode protection film (403) is placed between the substrate (100) and the gate electrode (303).

[0086] FIG. 11 is a cross-sectional view of a quantum device using a spin current equation utilizing the quantum spin Hall effect according to another embodiment of the present invention.

[0087] As shown in FIG. 11, a spin current equation utilizing the quantum spin Hall effect according to one embodiment of the present invention and a quantum device utilizing the same are configured to include a substrate (100), an amorphous SiOC thin film (200), a source electrode (301), a drain electrode (302), and a gate electrode (303).

[0088] To explain in more detail, the amorphous SiOC thin film (200) is placed on the substrate (100).

[0089] Additionally, the source electrode (301) is disposed on the amorphous SiOC thin film (200), and the drain electrode (302) is also disposed on the amorphous SiOC thin film (200).

[0090] The gate electrode (303) is placed on the substrate (100).

[0091] FIG. 12 is a cross-sectional view of a quantum device using a spin current equation utilizing the quantum spin Hall effect according to another embodiment of the present invention.

[0092] As illustrated in FIG. 12, a spin current equation utilizing the quantum spin Hall effect and a quantum device utilizing the same according to another embodiment of the present invention are configured to include a substrate (100), an amorphous SiOC thin film (200), a source electrode (301), a drain electrode (302), a gate electrode (303), a first electrode protection thin film (400), and a second electrode protection thin film (403).

[0093] To explain in more detail, the amorphous SiOC thin film (200) is placed on the substrate (100).

[0094] Additionally, the source electrode (301) is disposed on the amorphous SiOC thin film (200), and the drain electrode (302) is also disposed on the amorphous SiOC thin film (200).

[0095] The gate electrode (303) is placed on the substrate (100).

[0096] Additionally, the first electrode protective film (400) is disposed between the source electrode (301) and the amorphous SiOC film (200), and between the drain electrode (302) and the amorphous SiOC film (200), respectively.

[0097] Additionally, the second electrode protection film (403) is placed between the substrate (100) and the gate electrode (303).

[0098] FIG. 13 is a cross-sectional view of a quantum device using a spin current equation utilizing the quantum spin Hall effect according to another embodiment of the present invention.

[0099] As shown in FIG. 13, a spin current equation utilizing the quantum spin Hall effect according to one embodiment of the present invention and a quantum device utilizing the same are configured to include a substrate (100), an amorphous SiOC thin film (200), a source electrode (301), and a drain electrode (302).

[0100] To explain in more detail, the amorphous SiOC thin film (200) is placed on the substrate (100).

[0101] Additionally, the source electrode (301) is disposed on the amorphous SiOC thin film (200), and the drain electrode (302) is also disposed on the amorphous SiOC thin film (200).

[0102] At this time, according to the embodiment of FIG. 13, a sensory receptor contact portion (500) is formed on the substrate (100). Through this, a spin current generating quantum device that provides a high-sensitivity sensor function including a sensory receptor can be provided.

[0103] Thus, the spin current equation utilizing the quantum spin Hall effect according to the present invention and the quantum device utilizing the same are composed of an amorphous SiOC thin film that is an amorphous SiOC insulator in which a spin current is generated even in the absence of a magnetic field at room temperature, and 10 -6 Since a spin current smaller than A is generated, no leakage current occurs.

[0104] In the detailed description of the present invention as described above, specific embodiments have been described. However, various modifications are possible within the scope of the present invention. The technical concept of the present invention should not be limited to the aforementioned embodiments, but should be defined by the claims as well as equivalents thereof.

Claims

1. In a quantum device utilizing the quantum spin Hall effect, Substrate (100); and It includes an amorphous SiOC thin film (200) disposed on the substrate (100), and The above amorphous SiOC thin film (200) is, A spin current equation utilizing the quantum spin Hall effect and a quantum device utilizing the same, characterized by satisfying the following mathematical equations 1 and 2. [Mathematical Formula 1] R xy = V × I [Mathematical Formula 2] R xy = υR H Here, R xy ε is the spin Hall resistance of the amorphous SiOC thin film (200), V is the voltage applied to the amorphous SiOC thin film (200), I is the current applied to the amorphous SiOC thin film (200), R H = (R H = 2.58830865234 × 10 4 ) The Hall resistance of the amorphous SiOC thin film (200), υ, is an integer or a fraction.

2. In Claim 1, A source electrode (301) disposed on the above amorphous SiOC thin film (200); A drain electrode (302) disposed on the amorphous SiOC thin film (200); and A gate electrode (303) disposed on the lower part of the substrate (100); A spin current equation utilizing the quantum spin Hall effect and a quantum device utilizing the same, characterized by further including 3. In Claim 2, Electrode protection film (400) disposed respectively between the source electrode (301) and the amorphous SiOC film (200), and between the drain electrode (302) and the amorphous SiOC film (200); A spin current equation utilizing the quantum spin Hall effect and a quantum device utilizing the same, characterized by further including 4. In Claim 3, An electrode protection film (403) disposed between the substrate (100) and the gate electrode (303); A spin current equation utilizing the quantum spin Hall effect and a quantum device utilizing the same, characterized by further including 5. In Claim 1, A source electrode (301) disposed on the above amorphous SiOC thin film (200); A drain electrode (302) disposed on the amorphous SiOC thin film (200); and A gate electrode (303) disposed on the substrate (100); A spin current equation utilizing the quantum spin Hall effect and a quantum device utilizing the same, characterized by further including 6. In Claim 5, Electrode protection film (400) disposed respectively between the source electrode (301) and the amorphous SiOC film (200), and between the drain electrode (302) and the amorphous SiOC film (200); A spin current equation utilizing the quantum spin Hall effect and a quantum device utilizing the same, characterized by further including 7. In Claim 4, An electrode protection film (403) disposed between the substrate (100) and the gate electrode (303); A spin current equation utilizing the quantum spin Hall effect and a quantum device utilizing the same, characterized by further including 8. In Claim 1, A source electrode (301) disposed on the above amorphous SiOC thin film (200); A drain electrode (302) disposed on the above amorphous SiOC thin film (200); A gate electrode (303) disposed on the lower part of the substrate (100); and A sensory receptor contact portion (500) formed on the above substrate (100); A spin current equation utilizing the quantum spin Hall effect characterized by including, and a quantum device utilizing the same.

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