Copper-based multi-component p-type semiconductor material and method for manufacturing same

Abstract

One embodiment of the present invention provides a copper-based multi-component P-type semiconductor material having P-type semiconductor properties and excellent hole mobility at room temperature and represented by CuClxBryIz (0 < x ≤ 1, 0 < y ≤ 1, 0 < z ≤ 1, and x + y + z ≤ 1), and a method for manufacturing same. The method for manufacturing a copper-based multi-component P-type semiconductor material may comprise the steps of: preparing a mixed powder by mixing copper chloride powder, copper bromide powder, and copper iodide powder; and heat-treating the mixed powder to prepare a copper-based multi-component P-type semiconductor material.

Description

Copper-based multi-component P-type semiconductor material and method for manufacturing the same

[0001] The present invention relates to semiconductor materials, and more specifically, to a copper-based multi-component P-type semiconductor material and a method for manufacturing the same.

[0002] Multicomponent semiconductor materials are composed of combinations of four or more different elements and are a group of materials that are attracting attention for providing excellent optoelectronic properties that cannot be realized by conventional electronic ceramic materials.

[0003] N-type multi-component semiconductor material technology has been actively developed over the past few decades, and In-Ga-Zn-O (IGZO), a representative material, is widely used throughout the display and semiconductor industries. However, due to the lack of high-performance P-type counterpart materials for commercially available N-type multi-component semiconductors, there are difficulties in applying this technology to PN junction-based semiconductor devices.

[0004] Therefore, there is a need for research on high-performance P-type counterpart materials for commercialized N-type multi-component semiconductors.

[0005] [Prior Art Literature]

[0006] (Patent Document 1) Republic of Korea Registered Patent No. 10-1729533

[0007] The technical problem that the present invention aims to solve is to resolve the problems of the aforementioned prior art by providing a copper-based multi-component P-type semiconductor material and a method for manufacturing the same.

[0008] The technical problems that the present invention aims to solve are not limited to those mentioned above, and other unmentioned technical problems will be clearly understood by those skilled in the art to which the present invention belongs from the description below.

[0009] To achieve the above technical objectives, one embodiment of the present invention provides a copper-based multi-component P-type semiconductor material.

[0010] In one embodiment of the present invention, a copper-based multi-component P-type semiconductor material can be represented by the following chemical formula 1.

[0011] <Chemical Formula 1>

[0012] CuCl x Br y I z

[0013] (In the above Chemical Formula 1, 0 <x≤1, 0<y≤1, 0<z≤1이고 x+y+z≤1이다.)

[0014] In addition, in one embodiment of the present invention, in the above formula 1, 0.1≤x≤0.7, 0.1≤y≤0.7, 0.1≤z≤0.7 and x+y+z≤1.

[0015] In addition, in one embodiment of the present invention, the material may be in the form of a single crystal or a polycrystalline material.

[0016] In addition, in one embodiment of the present invention, the copper-based multi-component P-type semiconductor material may exhibit P-type semiconductor characteristics at a temperature of 10°C to 30°C.

[0017] In addition, in one embodiment of the present invention, the copper-based multi-component P-type semiconductor material is 1 cm at a temperature of 10 ℃ to 30 ℃. 2 It can have a hole mobility of / V·s or greater.

[0018] In addition, in one embodiment of the present invention, the copper-based multi-component P-type semiconductor material is 10 at a temperature of 10 ℃ to 30 ℃ 8 cm -3 to 10 22 cm -3 It can have a carrier density of

[0019] To achieve the above technical objectives, one embodiment of the present invention provides a method for manufacturing a copper-based multi-component P-type semiconductor material.

[0020] In one embodiment of the present invention, a method for manufacturing a copper-based multi-component P-type semiconductor material may include the step of mixing copper chloride, copper bromide, and copper iodide powders to produce a mixed powder; and the step of heat-treating the mixed powder to produce a copper-based multi-component P-type semiconductor material.

[0021] In addition, in one embodiment of the present invention, in the step of manufacturing the copper-based multi-component P-type semiconductor material, the mixed powder may be sealed in a pellet form and then heat-treated. In addition, in one embodiment of the present invention, the mixing molar ratio of the copper chloride, copper bromide, and copper iodide powders in the mixed powder may be 0.1 to 0.7 : 0.1 to 0.7 : 0.1 to 0.7.

[0022] In addition, in one embodiment of the present invention, in the step of manufacturing the copper-based multi-component P-type semiconductor material, heat treatment can be performed at a temperature of 200 ℃ to 1000 ℃ for 12 hours to 240 hours.

[0023] In addition, in one embodiment of the present invention, in the step of manufacturing the copper-based multi-component P-type semiconductor material, the copper-based multi-component P-type semiconductor material may be represented by the following chemical formula 1.

[0024] <Chemical Formula 1>

[0025] CuCl x Br y I z

[0026] (In the above Chemical Formula 1, 0.1≤x≤0.7, 0.1≤y≤0.7, 0.1≤z≤0.7, and x+y+z≤1.)

[0027] A copper-based multi-component P-type semiconductor material according to one embodiment of the present invention has P-type semiconductor characteristics and excellent hole mobility at room temperature, so it can be utilized in various fields such as optoelectronic devices including thin-film transistors and catalytic devices.

[0028] The effects of the present invention are not limited to the effects described above, and should be understood to include all effects that can be inferred from the configuration of the invention described in the detailed description of the invention or the claims.

[0029] FIG. 1 is a conceptual diagram showing a method for manufacturing a copper-based multi-component P-type semiconductor material according to one embodiment of the present invention.

[0030] FIG. 2 is a copper-based multi-component P-type semiconductor material CuCl according to one embodiment of the invention. x Br y I z This is a schematic diagram of the crystal structure.

[0031] Figure 3 shows CuCl 0.2 Br 0.4 I 0.4 (a) X-ray diffraction pattern and (b) a photograph of a powder sample of a copper-based multi-component P-type semiconductor material having the composition.

[0032] FIG. 4 shows CuCl according to an embodiment of the present invention using scanning electron microscopy and energy dispersive X-ray analysis. 0.2 Br 0.4 I 0.4 This is an electron microscope image and a compositional distribution image of a copper-based multi-component P-type semiconductor material having the composition of

[0033] Figure 5 shows CuCl using ultraviolet-visible spectroscopy data. 0.2 Br 0.4 I 0.4This is a band gap measurement graph of a copper-based multi-component P-type semiconductor material having the composition of

[0034] Figure 6 shows CuCl 0.25 Br 0.5 I 0.25 (a) X-ray diffraction pattern and (b) a photograph of a powder sample of a copper-based multi-component P-type semiconductor material having the composition.

[0035] FIG. 7 shows CuCl according to an embodiment of the present invention using scanning electron microscopy and energy dispersive X-ray analysis. 0.25 Br 0.5 I 0.25 This is an electron microscope image and a compositional distribution image of a copper-based multi-component P-type semiconductor material having the composition of

[0036] Figure 8 shows CuCl using ultraviolet-visible spectroscopy data. 0.25 Br 0.5 I 0.25 This is a band gap measurement graph of a copper-based multi-component P-type semiconductor material having the composition of

[0037] Figure 9 shows CuCl 0.25 Br 0.25 I 0.5 (a) X-ray diffraction pattern and (b) a photograph of a powder sample of a copper-based multi-component P-type semiconductor material having the composition.

[0038] FIG. 10 shows CuCl according to an embodiment of the present invention using scanning electron microscopy and energy dispersive X-ray analysis. 0.25 Br 0.25 I 0.5This is an electron microscope image and a compositional distribution image of a copper-based multi-component P-type semiconductor material having the composition of

[0039] Figure 11 shows CuCl using ultraviolet-visible spectroscopy data. 0.25 Br 0.25 I 0.5 This is a band gap measurement graph of a copper-based multi-component P-type semiconductor material having the composition of

[0040] The present invention will be described below with reference to the attached drawings. However, the present invention may be implemented in various different forms and is therefore not limited to the embodiments described herein. Furthermore, in order to clearly explain the present invention in the drawings, parts unrelated to the explanation have been omitted, and similar parts throughout the specification have been given similar reference numerals.

[0041] Throughout the specification, when it is stated that a part is "connected (connected, in contact, combined)" with another part, this includes not only cases where they are "directly connected," but also cases where they are "indirectly connected" with other members interposed between them. Furthermore, when it is stated that a part "includes" a certain component, this means that, unless specifically stated otherwise, it does not exclude other components but rather allows for the inclusion of additional components.

[0042] The terms used herein are merely for describing specific embodiments and are not intended to limit the invention. Singular expressions include plural expressions unless the context clearly indicates otherwise. In this specification, terms such as “comprising” or “having” are intended to indicate the presence of the features, numbers, steps, actions, components, parts, or combinations thereof described in the specification, and should be understood as not precluding the existence or addition of one or more other features, numbers, steps, actions, components, parts, or combinations thereof.

[0043] Hereinafter, the present invention will be described with reference to the drawings presented in this specification. For reference, the drawings may be partially exaggerated to illustrate the features of the present invention. In such cases, it is preferable to interpret them in light of the entire intent of this specification.

[0044]

[0045] A copper-based multi-component P-type semiconductor material according to one embodiment of the present invention is described.

[0046] To briefly summarize the present invention, it relates to a copper-based multi-component P-type semiconductor material. Specifically, to overcome the limitations of existing multi-component semiconductor material technology, the invention provides a P-type semiconductor material comprising copper (Cu), chlorine (Cl), bromine (Br), and iodine (I) that exhibits P-type semiconductor characteristics and excellent hole mobility characteristics at room temperature.

[0047] The present invention having the aforementioned characteristics will be described in detail below.

[0048] A copper-based multi-component P-type semiconductor material according to one embodiment of the present invention can be represented by the following chemical formula 1.

[0049] <Chemical Formula 1>

[0050] CuCl x Br y Iz

[0051] (In the above Chemical Formula 1, 0 <x≤1, 0<y≤1, 0<z≤1이고 x+y+z≤1이다.)

[0052] In this case, the multi-component system refers to copper, chlorine, bromine, and iodine, which can mean a quaternary system.

[0053] In addition, a P-type semiconductor refers to a semiconductor in which holes are the primary charge carriers.

[0054] Meanwhile, in the above Chemical Formula 1, the properties of the copper-based multi-component P-type semiconductor material may vary depending on the ranges of x, y, and z, and x, y, and z are 0 <x≤1, 0<y≤1, 0<z≤1 및 x+y+z≤1을 만족할 수 있고, 더욱 바람직하게는 0.1≤x≤0.7, 0.1≤y≤0.7, 0.1≤z≤0.7 및 x+y+z≤1을 만족할 수 있다.

[0055] At this time, if the above x, y, and z fall outside the desirable range, a phase separation phenomenon may occur in which CuCl, CuBr, and CuI exist separately without forming a complete solid solution, so it is desirable to satisfy the aforementioned range.

[0056] Meanwhile, the copper-based multi-component P-type semiconductor material may be formed in a single crystal or polycrystalline form, but there are no special restrictions on the shape or structure, and it can be configured in various forms.

[0057] Meanwhile, the above copper-based multi-component P-type semiconductor material may exhibit P-type semiconductor characteristics at room temperature.

[0058] At this time, room temperature may mean 10 ℃ to 30 ℃.

[0059] Specifically, the copper-based multi-component P-type semiconductor material can exhibit P-type semiconductor characteristics at a temperature of 10 ℃ to 30 ℃, and at this time, 1 cm 2 Hole mobility of / V·s or higher and 10 8 cm-3 to 10 22 cm -3 It can provide an effect of having carrier density between them.

[0060] In summary, the copper-based multi-component P-type semiconductor material of the present invention has the advantage of possessing P-type semiconductor characteristics and excellent hole mobility characteristics at room temperature.

[0061] Copper-based multi-component P-type semiconductor materials having the aforementioned advantages can be utilized in various applications.

[0062] For example, the copper-based multi-component P-type semiconductor material of the present invention may be used in thin-film transistors, optoelectronic devices, or catalytic devices, and is not limited to the examples mentioned above.

[0063] Below, we intend to describe a method for manufacturing a copper-based multi-component P-type semiconductor material having the aforementioned advantages.

[0064]

[0065] A method for manufacturing a copper-based multi-component P-type semiconductor material according to one embodiment of the present invention is described.

[0066] The method for manufacturing a copper-based multi-component P-type semiconductor material according to the present invention can apply all the contents described above regarding the copper-based multi-component P-type semiconductor material, and although detailed descriptions of overlapping parts have been omitted, they can be applied in the same way even if such descriptions are omitted.

[0067]

[0068] A method for manufacturing a copper-based multi-component P-type semiconductor material according to one embodiment of the present invention may include the step of preparing a mixed powder by mixing copper chloride, copper bromide, and copper iodide powders; and the step of manufacturing a copper-based multi-component P-type semiconductor material by heat-treating the mixed powder.

[0069]

[0070] The first step may include mixing copper chloride, copper bromide, and copper iodide powders to produce a mixed powder.

[0071] At this time, the amount of the mixed powder can be appropriately adjusted and mixed according to the stoichiometric ratio of the copper-based multi-component P-type semiconductor material to be manufactured. For example, the molar ratio of the copper chloride, copper bromide, and copper iodide powders may be 0 to 1 : 0 to 1 : 0 to 1 (CuCl:CuBr:CuI), and preferably 0.1 to 0.7 : 0.1 to 0.7 : 0.1 to 0.7.

[0072] At this time, if the mixed molar ratio of the copper chloride, copper bromide, and copper iodide powders deviates from the desirable molar ratio, a complete solid solution may not be formed, and a phase separation phenomenon in which CuCl, CuBr, and CuI exist separately may occur, so it may be desirable to satisfy the aforementioned range.

[0073] Meanwhile, depending on the form of the copper-based multi-component P-type semiconductor material to be manufactured, the mixed powder can be sealed before heat treatment, and as an example, the mixed powder can be sealed in the form of pellets.

[0074]

[0075] The second step may include a step of heat-treating the above-mentioned mixed powder to manufacture a copper-based multi-component P-type semiconductor material.

[0076] At this time, in the step of manufacturing the copper-based multi-component P-type semiconductor material, heat treatment can be performed at a temperature of 200 ℃ to 1000 ℃ for 12 hours to 240 hours.

[0077] This is because if the aforementioned temperature range and time are exceeded, the reaction between the raw materials may not proceed properly, or some of the anions may evaporate, resulting in a large amount of defects.

[0078] Thus, the copper-based multi-component P-type semiconductor material manufactured can be represented by the following chemical formula 1.

[0079] <Chemical Formula 1>

[0080] CuCl x Br y I z

[0081] In the above Chemical Formula 1, 0 <x≤1, 0<y≤1, 0<z≤1이고 x+y+z≤1이다.

[0082] At this time, the above x, y, and z may more preferably be 0.1≤x≤0.7, 0.1≤y≤0.7, 0.1≤z≤0.7, and x+y+z≤1.

[0083]

[0084] The present invention will be explained in more detail below through examples and experimental examples. These examples and experimental examples are solely for the purpose of illustrating the present invention, and the scope of the present invention is not limited by these examples and experimental examples.

[0085]

[0086] Example 1: CuCl 0.2 Br 0.4 I 0.4 Manufacturing of a copper-based multi-component p-type semiconductor material having the composition

[0087] FIG. 1 is a conceptual diagram showing a method for manufacturing a copper-based multi-component P-type semiconductor material according to one embodiment of the present invention.

[0088] Referring to Fig. 1, first, copper chloride (CuCl) powder, copper bromide (CuBr) powder, and copper iodide (CuI) powder were mixed in a molar ratio of 1:2:2 to prepare a mixed powder.

[0089] A copper-based multi-component P-type semiconductor material was prepared by pelletizing the manufactured mixed powder, sealing it using a glass tube, and heat-treating it at a temperature of 500 ℃ for 48 hours.

[0090] Thus, CuCl0.2 Br 0.4 I 0.4 A copper-based multi-component P-type semiconductor material having the composition was manufactured.

[0091]

[0092] Example 2: CuCl 0.25 Br 0.5 I 0.25 Manufacturing of a copper-based multi-component p-type semiconductor material having the composition

[0093] First, a mixed powder was prepared by mixing copper chloride (CuCl) powder, copper bromide (CuBr) powder, and copper iodide (CuI) powder in a molar ratio of 1:2:1.

[0094] A copper-based multi-component P-type semiconductor material was prepared by pelletizing the manufactured mixed powder, sealing it using a glass tube, and heat-treating it at a temperature of 500 ℃ for 48 hours.

[0095] Thus, CuCl 0.25 Br 0.5 I 0.25 A copper-based multi-component P-type semiconductor material having the composition was manufactured.

[0096]

[0097] Example 3: CuCl 0.25 Br 0.25 I 0.5 Manufacturing of a copper-based multi-component p-type semiconductor material having the composition

[0098] First, a mixed powder was prepared by mixing copper chloride (CuCl) powder, copper bromide (CuBr) powder, and copper iodide (CuI) powder in a molar ratio of 1:1:2.

[0099] A copper-based multi-component P-type semiconductor material was prepared by pelletizing the manufactured mixed powder, sealing it using a glass tube, and heat-treating it at a temperature of 500 ℃ for 48 hours.

[0100] Thus, CuCl 0.25 Br 0.25 I 0.5A copper-based multi-component P-type semiconductor material having the composition was manufactured.

[0101]

[0102] Experimental Example 1: Evaluation of Crystal Structure and Chemical Composition

[0103] FIG. 2 is a copper-based multi-component P-type semiconductor material CuCl according to one embodiment of the invention. x Br y I z This is a schematic diagram of the crystal structure.

[0104] Referring to Fig. 2, CuCl x Br y I z It can be confirmed that the copper-based multicomponent p-type semiconductor material having the composition has a local structure in which copper (Cu) cations are surrounded by anions (Cl, Br, I) in a tetracoordinate arrangement.

[0105]

[0106] Figure 3 shows CuCl 0.2 Br 0.4 I 0.4 (a) X-ray diffraction pattern and (b) a photograph of a powder sample of a copper-based multi-component P-type semiconductor material having the composition.

[0107] Referring to Fig. 3, CuCl through Fig. 3(a). 0.2 Br 0.4 I 0.4 The crystal structure of a copper-based multi-component P-type semiconductor material having the composition can be confirmed, and the absence of additional impurity peaks confirms that a uniform crystal phase of high purity is formed.

[0108] In addition, through Figure 3 (b), it can be confirmed that it is well formed in a fine powder state.

[0109]

[0110] FIG. 4 shows CuCl according to an embodiment of the present invention using scanning electron microscopy and energy dispersive X-ray analysis. 0.2 Br 0.4 I 0.4 This is an electron microscope image and a compositional distribution image of a copper-based multi-component P-type semiconductor material having the composition of

[0111] Table 1 shows impurity-free CuCl through energy-dispersive X-ray analysis. 0.2 Br 0.4 I 0.4 This is a table showing the elemental ratios of samples with the given composition.

[0112] Referring to Fig. 4 and Table 1 below, CuCl 0.2 Br 0.4 I 0.4 A uniform compositional distribution of a copper-based multi-component P-type semiconductor material having the composition can be confirmed.

[0113] [Table 1]

[0114]

[0115] Figure 5 shows CuCl using ultraviolet-visible spectroscopy analysis data. 0.2 Br 0.4 I 0.4 This is a band gap measurement graph of a copper-based multi-component P-type semiconductor material having the composition of

[0116] Referring to Fig. 5, ultraviolet-visible spectroscopy is a method for analyzing optical properties by measuring the absorbance of a substance using ultraviolet and visible light, utilizing the principle that the intensity of light decreases when a specific wavelength of light is absorbed, and CuCl 0.2 Br 0.4 I 0.4 A band gap of 2.7 eV or more was measured in the composition, which means that it has the characteristics of a wide band gap semiconductor.

[0117]

[0118] Figure 6 shows CuCl 0.25 Br 0.5 I 0.25 (a) X-ray diffraction pattern and (b) a photograph of a powder sample of a copper-based multi-component P-type semiconductor material having the composition.

[0119] Referring to Fig. 6, CuCl through Fig. 6 (a). 0.25 Br 0.5 I 0.25 The crystal structure of a copper-based multi-component P-type semiconductor material having the composition can be confirmed, and the absence of additional impurity peaks confirms that a uniform crystal phase of high purity is formed.

[0120] In addition, through Figure 6 (b), it can be confirmed that it is well formed in a fine powder state.

[0121]

[0122] FIG. 7 shows CuCl according to an embodiment of the present invention using scanning electron microscopy and energy dispersive X-ray analysis. 0.25 Br 0.5 I 0.25 This is an electron microscope image and a compositional distribution image of a copper-based multi-component P-type semiconductor material having the composition of

[0123] Table 2 shows impurity-free CuCl through energy-dispersive X-ray analysis. 0.25 Br 0.5 I 0.25 This is a table showing the elemental ratios of samples with the given composition.

[0124] Referring to Fig. 7 and Table 2 below, CuCl 0.25 Br 0.5 I 0.25 A uniform compositional distribution of a copper-based multi-component P-type semiconductor material having the composition can be confirmed.

[0125] [Table 2]

[0126]

[0127]

[0128] Figure 8 shows CuCl using ultraviolet-visible spectroscopy analysis data. 0.25 Br 0.5 I 0.25 This is a band gap measurement graph of a copper-based multi-component P-type semiconductor material having the composition of

[0129] Referring to Fig. 8, CuCl 0.25 Br 0.5 I 0.25 It can be confirmed that a band gap of 2.7 eV or more was measured in the composition.

[0130]

[0131] Figure 9 shows CuCl 0.25 Br 0.25 I 0.5 (a) X-ray diffraction pattern and (b) a photograph of a powder sample of a copper-based multi-component P-type semiconductor material having the composition.

[0132] Referring to Fig. 9, CuCl through Fig. 9 (a). 0.25 Br 0.25 I 0.5 The crystal structure of a copper-based multi-component P-type semiconductor material having the composition can be confirmed, and the absence of additional impurity peaks confirms that a uniform crystal phase of high purity is formed.

[0133] In addition, through Fig. 9 (b), it can be confirmed that it is well formed in a fine powder state.

[0134]

[0135] FIG. 10 shows CuCl according to an embodiment of the present invention using scanning electron microscopy and energy dispersive X-ray analysis. 0.25 Br0.25 I 0.5 This is an electron microscope image and a compositional distribution image of a copper-based multi-component P-type semiconductor material having the composition of

[0136] Table 3 shows impurity-free CuCl through energy-dispersive X-ray analysis. 0.25 Br 0.25 I 0.5 This is a table showing the elemental ratios of samples with the given composition.

[0137] Referring to Fig. 10 and Table 3 below, CuCl 0.25 Br 0.25 I 0.5 A uniform compositional distribution of a copper-based multi-component P-type semiconductor material having the composition can be confirmed.

[0138] [Table 3]

[0139]

[0140]

[0141] Figure 11 shows CuCl using ultraviolet-visible spectroscopy analysis data. 0.25 Br 0.25 I 0.5 This is a band gap measurement graph of a copper-based multi-component P-type semiconductor material having the composition of

[0142] Referring to Fig. 11, CuCl 0.25 Br 0.25 I 0.5 It can be confirmed that a band gap of 2.7 eV or more was measured in the composition.

[0143]

[0144] Experimental Example 2: Analysis of Electrical Characteristics

[0145] Tables 4 to 6 below show CuCl according to one embodiment utilizing the Hall effect measurement of the present invention. 0.2 Br 0.4 I 0.4 , CuCl 0.25 Br 0.5 I 0.25 and CuCl0.25 Br 0.25 I 0.5 This is a table summarizing the carrier type, Hall mobility, and carrier concentration of copper-based multi-component P-type semiconductor materials with a given composition.

[0146] At this time, Table 4 below is CuCl 0.2 Br 0.4 I 0.4 This is the result for.

[0147] At this time, Table 5 below is CuCl 0.25 Br 0.5 I 0.25 This is the result for.

[0148] At this time, Table 6 below is CuCl 0.25 Br 0.25 I 0.5 This is the result for.

[0149] [Table 4]

[0150]

[0151] [Table 5]

[0152]

[0153] [Table 6]

[0154]

[0155]

[0156] Referring to Tables 4 to 6 above, CuCl 0.2 Br 0.4 I 0.4 , CuCl 0.25 Br 0.5 I 0.25 and CuCl 0.25 Br 0.25 I 0.5 Copper-based multicomponent semiconductor materials having a composition exhibit P-type semiconductor characteristics at room temperature, and 10 cm 2 It can be confirmed that it has a high hole mobility of / V·s or higher.

[0157] In other words, the excellent electrical properties of the copper-based multi-component P-type semiconductor material shown in Experimental Example 2 demonstrate the potential for core utilization in the semiconductor industry as a whole, including thin-film transistors.

[0158] Through the aforementioned experimental examples, it can be confirmed that the hole mobility and carrier density of the copper-based multi-component P-type semiconductor material according to one embodiment of the present invention change depending on the composition of the anion, and it can also be inferred that the copper-based multi-component P-type semiconductor material forms a complete solid solution within a desirable compositional ratio range.

[0159]

[0160] The foregoing description of the present invention is for illustrative purposes only, and those skilled in the art will understand that other specific forms can be easily modified without altering the technical spirit or essential features of the present invention. Therefore, the embodiments described above should be understood as illustrative in all respects and not restrictive. For example, each component described as a single unit may be implemented in a distributed manner, and components described as distributed may likewise be implemented in a combined form.

[0161] The scope of the present invention is defined by the claims set forth below, and all modifications or variations derived from the meaning and scope of the claims and equivalent concepts thereof should be interpreted as being included within the scope of the present invention.

Claims

1. A copper-based multi-component p-type semiconductor material characterized by being represented by the following chemical formula 1: <Chemical Formula 1> CuCl x Br y I z (In the above Chemical Formula 1, 0 <x≤1, 0<y≤1, 0<z≤1이고 x+y+z≤1이다.) 2. In Paragraph 1, A copper-based multi-component P-type semiconductor material characterized by 0.1≤x≤0.7, 0.1≤y≤0.7, 0.1≤z≤0.7, and x+y+z≤1 in the above chemical formula 1.

3. In Paragraph 1, The copper-based multi-component P-type semiconductor material is characterized by being in a single crystal or polycrystalline form.

4. In Paragraph 1, The copper-based multi-component P-type semiconductor material is characterized by exhibiting P-type semiconductor characteristics at a temperature of 10°C to 30°C.

5. In Paragraph 1, The above copper-based multi-component P-type semiconductor material is 1 cm at a temperature of 10 ℃ to 30 ℃ 2 Copper-based multi-component p-type semiconductor material having a hole mobility of / V·s or greater.

6. In Paragraph 1, The above copper-based multi-component P-type semiconductor material is 10 at a temperature of 10 ℃ to 30 ℃ 8 cm -3 to 10 22 cm -3 Copper-based multi-component p-type semiconductor material having a carrier density of 7. A step of preparing a mixed powder by mixing copper chloride, copper bromide, and copper iodide powders; and A method for manufacturing a copper-based multi-component P-type semiconductor material, characterized by including the step of heat-treating the above-mentioned mixed powder to manufacture a copper-based multi-component P-type semiconductor material.

8. In Paragraph 7, In the step of manufacturing the above copper-based multi-component P-type semiconductor material, A method for manufacturing a copper-based multi-component P-type semiconductor material characterized by sealing the above-mentioned mixed powder into a pellet form and then heat-treating it.

9. In Paragraph 7, In the above mixed powder, A method for manufacturing a copper-based multi-component P-type semiconductor material, characterized in that the mixing molar ratio of the copper chloride, copper bromide, and copper iodide powders is 0.1 to 0.7 : 0.1 to 0.7 : 0.1 to 0.

7.

10. In Paragraph 7, In the step of manufacturing the above copper-based multi-component P-type semiconductor material, A method for manufacturing a copper-based multi-component P-type semiconductor material characterized by heat treatment at a temperature of 200 ℃ to 1000 ℃ for 12 to 240 hours.

11. In Paragraph 7, In the step of manufacturing the above copper-based multi-component P-type semiconductor material, A method for manufacturing a copper-based multi-component P-type semiconductor material, characterized in that the copper-based multi-component P-type semiconductor material is represented by the following chemical formula 1: <Chemical Formula 1> CuCl x Br y I z (In the above Chemical Formula 1, 0.1≤x≤0.7, 0.1≤y≤0.7, 0.1≤z≤0.7, and x+y+z≤1.)

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