Tandem perovskite solar cell and manufacturing method therefor

Abstract

The present invention relates to a tandem perovskite solar cell and a manufacturing method therefor, the solar cell including a surface field layer having a concentration gradient.

Description

Tandem perovskite solar cell and method for manufacturing the same

[0001] The present invention relates to a tandem perovskite solar cell comprising an electric field layer having a concentration gradient and a method for manufacturing the same.

[0002]

[0003] In order to address the depletion of fossil fuels and the global environmental problems caused by their use, research on renewable and clean alternative energy sources such as solar, wind, and hydroelectric power is actively underway.

[0004] Among these, interest in solar cells, which directly convert sunlight into electrical energy, is increasing significantly. Here, a solar cell refers to a battery that generates current and voltage by utilizing the photovoltaic effect, which absorbs light energy from sunlight to generate electrons and holes.

[0005] Currently, it is possible to manufacture np diode-type silicon (Si) single-crystal-based solar cells with a light energy conversion efficiency of over 20%, and they are being used in actual solar power generation. There are also solar cells using compound semiconductors such as gallium arsenide (GaAs), which have even better conversion efficiency. However, these inorganic semiconductor-based solar cells require materials purified to a very high degree of purity to achieve high efficiency, so a large amount of energy is consumed in purifying the raw materials. Furthermore, expensive process equipment is required to process the raw materials into single crystals or thin films, which limits the ability to lower the manufacturing cost of solar cells and has been a stumbling block to large-scale utilization.

[0006] Accordingly, in order to manufacture solar cells at a low cost, it is necessary to significantly reduce the cost of materials or manufacturing processes used as core components; as an alternative to inorganic semiconductor-based solar cells, research is being conducted on perovskite solar cells, which can be manufactured using low-cost materials and processes.

[0007] Recently, perovskite solar cells using (NH3CH3)PbX3 (X=I, Br, Cl), a halogen compound with a perovskite structure, as a photoactive material have been developed, and research for commercialization is underway. The general structural formula of a perovskite structure is ABX3, in which an anion is located at the X site, a large cation is located at the A site, and a small cation is located at the B site.

[0008] Meanwhile, perovskite solar cells are being developed in the form of PIN perovskite single solar cells or two-terminal perovskite / silicon tandem solar cells. In the case of two-terminal perovskite / silicon tandem solar cells, they are manufactured by connecting a silicon solar cell and a perovskite solar cell through a recombination layer.

[0009] In this case, a silicon oxide tunneling layer and a surface field are applied for passivation in silicon solar cells; however, conventionally formed surface fields caused a problem of reduced current density due to increased parasitic absorption resulting from high doping concentration and crystallinity. Furthermore, while polysilicon with microcrystals can be applied to the surface field to reduce such parasitic absorption, this presented a problem in that it did not sufficiently perform the passivation role through the formation of an electric field.

[0010]

[0011] The present invention was devised to overcome the aforementioned problems and aims to provide a tandem perovskite solar cell and a method for manufacturing the same, which can not only have excellent power conversion efficiency but also secure excellent stability by forming an electric field layer having a concentration gradient under specific conditions, which is a major component of a silicon solar cell.

[0012]

[0013] To solve the above-mentioned problem, the tandem perovskite solar cell of the present invention is a tandem perovskite solar cell in which a bottom cell, a recombination layer, and a top cell are sequentially stacked, and the bottom cell may include a silicon substrate, a tunneling layer formed on the silicon substrate, and a field layer formed on the tunneling layer.

[0014] As a preferred embodiment of the present invention, the electric field layer may include one or more layers.

[0015] As a preferred embodiment of the present invention, the electric field layer may have a first region containing an oxygen element and a second region not containing an oxygen element.

[0016] As a preferred embodiment of the present invention, the first region may be formed with a thickness of 30 to 80 percent with respect to the total thickness of the electric field layer.

[0017] As a preferred embodiment of the present invention, the electric field layer may include a first layer formed on top of the tunnel layer, a second layer formed on top of the first layer, and a third layer formed on top of the second layer.

[0018] As a preferred embodiment of the present invention, the second layer of the electric field may include silicon elements and may not include oxygen elements.

[0019] As a preferred embodiment of the present invention, the first layer of the electric field layer may include silicon elements and oxygen elements.

[0020] As a preferred embodiment of the present invention, the third layer of the electric field may include silicon elements and oxygen elements.

[0021] As a preferred embodiment of the present invention, the tunneling layer may comprise 25 to 45 at% silicon element and 55 to 75 at% oxygen element with respect to the total at%.

[0022] As a preferred embodiment of the present invention, the tunneling layer may have a thickness of 0.5 to 10 nm.

[0023] As a preferred embodiment of the present invention, the electric field layer may have a thickness ratio of 1:1.9 to 2.9:16 to 24 for the first layer, the second layer, and the third layer.

[0024] As a preferred embodiment of the present invention, the electric field layer may have a thickness of 40 to 200 nm.

[0025] As a preferred embodiment of the present invention, the first layer may have a thickness of 1 to 20 nm.

[0026] As a preferred embodiment of the present invention, the second layer may have a thickness of 4 to 60 nm.

[0027] As a preferred embodiment of the present invention, the third layer may have a thickness of 35 to 150 nm.

[0028] As a preferred embodiment of the present invention, the first layer may contain 55 to 75 at% silicon element and 20 to 40 at% oxygen element with respect to the total at%.

[0029] As a preferred embodiment of the present invention, the second layer may contain 90 to 100 at% of silicon element with respect to the total at%.

[0030] As a preferred embodiment of the present invention, the third layer may contain 60 to 80 at% silicon element and 10 to 30 at% oxygen element with respect to the total at%.

[0031] As a preferred embodiment of the present invention, the upper cell may include a perovskite light-absorbing layer.

[0032] As a preferred embodiment of the present invention, the perovskite light-absorbing layer may include a perovskite material represented by the following chemical formula 1.

[0033] [Chemical Formula 1]

[0034] CMX3

[0035] In the above chemical formula 1, C is a monovalent cation, M is a divalent cation, and X is a monovalent anion.

[0036] Meanwhile, the method for manufacturing a tandem perovskite solar cell according to the present invention may include a first step of forming an emitter layer on the lower part of a silicon substrate, a second step of forming a tunneling layer on the upper part of a silicon substrate, a third step of forming an electric field layer on the upper part of the tunneling layer, a fourth step of sequentially forming a passivation layer and a first metal electrode on the lower part of the emitter layer, and a fifth step of sequentially forming a recombination layer and an upper cell on the upper part of the electric field layer. At this time, the electric field layer may include one or more layers.

[0037] Additionally, the electric field layer may have a first region containing oxygen elements and a second region not containing oxygen elements, and the first region may be formed with a thickness of 30 to 80 percent relative to the total thickness of the electric field layer.

[0038] In addition, the third step may form an electric field layer in which the first, second, and third layers are sequentially stacked on top of the tunneling layer, and the fifth step may sequentially form a recombination layer and an upper cell on top of the third layer of the electric field layer.

[0039] In addition, the method for manufacturing a tandem perovskite solar cell of the present invention may include a silicon element in the second layer of the electric field layer and may not include an oxygen element.

[0040] As a preferred embodiment of the present invention, the tunneling layer can be formed through a chemical vapor deposition (CVD) process.

[0041] As a preferred embodiment of the present invention, the tunneling layer can be formed using silane (SiH4) and oxygen (O2) gas.

[0042] As a preferred embodiment of the present invention, the electric field layer can be formed through a CVD (chemical vapor deposition) process.

[0043] As a preferred embodiment of the present invention, the electric field layer can be formed using silane (SiH4), hydrogen (H2), nitrous oxide (N2O), phosphine (PH3), and oxygen (O2) gases.

[0044]

[0045] The tandem perovskite solar cell of the present invention and the method for manufacturing the same not only have excellent power conversion efficiency but can also ensure excellent stability.

[0046]

[0047] The present invention will be described in more detail below.

[0048] Perovskite solar cells are being developed in the form of PIN perovskite single solar cells or two-terminal perovskite / silicon tandem solar cells. In the case of two-terminal perovskite / silicon tandem solar cells, they are manufactured by connecting a silicon solar cell and a perovskite solar cell through a recombination layer.

[0049] At this time, a silicon oxide tunneling layer and a surface field are formed for passivation of silicon solar cells; however, conventionally formed surface fields caused a problem of reduced current density due to increased parasitic absorption resulting from high doping concentration and crystallinity. Furthermore, while polysilicon with microcrystals can be applied to the surface field to reduce such parasitic absorption, this presented a problem in that its passivation role through the formation of the surface field was insufficient.

[0050] To solve this, the present invention forms an electric field layer having a concentration gradient under specific conditions, which is a major component of a silicon solar cell, thereby not only having excellent power conversion efficiency but also ensuring excellent stability.

[0051]

[0052] The tandem perovskite solar cell of the present invention may have a structure in which a bottom cell, a recombination layer, and a top cell are sequentially stacked.

[0053] The lower cell may include a silicon substrate.

[0054] The silicon substrate of the present invention may be a silicon substrate in which a dopant is doped into single-crystal silicon or polycrystalline silicon. The dopant may be a Group 15 element, specifically phosphorus (P), arsenic (As), antimony (Sb), or bismuth (Bi). Additionally, the dopant may be a Group 13 element, specifically boron (B), aluminum (Al), or gallium (Ga). The lower surface of the silicon substrate may have an uneven structure composed of irregularities, and such an uneven structure may be formed by a so-called texturing process. Most preferably, the silicon substrate of the present invention may be n-type conductive crystalline silicon doped with phosphorus (P) as a dopant having a textured surface.

[0055]

[0056] In addition, the lower cell may include an emitter layer formed on the lower part of the silicon substrate.

[0057] The emitter layer is a layer that forms a pn junction by bonding with a silicon substrate to generate an electric field, serves as a pathway for the movement of electrons generated by incident light, and allows for the accumulation of charge. Furthermore, the degree of doping in the emitter layer significantly affects the efficiency of the solar cell; while heavy doping has the advantage of lowering contact resistance with the electrode and generating a large electric field, it may lead to recombination problems where electrons generated by incident light are easily lost due to the injection of many impurities. Additionally, the emitter layer may have an uneven structure that conforms to the uneven structure of the silicon substrate. Moreover, the uneven structure of the emitter layer is desirable as it can increase light reception efficiency by suppressing the reflection of incident sunlight. Most preferably, the emitter layer of the present invention may be a p-type conductive emitter layer formed by doping boron (B) into the silicon substrate.

[0058] In addition, as a method for forming the emitter layer, a diffusion process can be performed, but any emitter layer formation process used in the industry can be performed. In addition, the diffusion process may use boron tribromide (BBr3) gas, but is not limited thereto.

[0059] In addition, there is no separate limit on the thickness of the silicon substrate on which the emitter layer is formed, but preferably it can have a thickness of 140 to 250 μm, and more preferably 160 to 200 μm.

[0060] Meanwhile, the lower cell can flatten the upper surface of the silicon substrate by performing a planarization process on the upper surface of the silicon substrate. The planarization process not only enables the tunneling layer and / or electric field layer that may be formed on the upper surface of the silicon substrate to be deposited uniformly, but also enables the upper cell to be formed uniformly. In addition, the planarization process may use an alkaline process, but is not limited thereto.

[0061]

[0062] In addition, the lower cell may include a tunneling layer formed on the upper surface of the silicon substrate.

[0063] The tunneling layer is a layer that facilitates the smooth transport of carriers through the tunneling effect and prevents carrier recombination that may occur at defects in the silicon substrate; it can be formed from a dielectric material, such as silicon oxide (SiOx) or silicon nitride (SiN). x ), silicon oxide nitride (SiO x N y ), hydrogenated silicon oxide (SiO₂) x :H), hydrogenated silicon nitride (SiN x :H) and hydrogenated silicon oxynitride (SiO₂) x N y It may include one or more selected from :H), and preferably may include silicon oxide (SiOx).

[0064] In addition, the tunneling layer may contain, with respect to the total at%, 25 to 45 at% of silicon element, preferably 30 to 40 at%, more preferably 33 to 37 at%, and 55 to 75 at% of oxygen element, preferably 60 to 70 at%, more preferably 63 to 72 at%.

[0065] As a method for forming a tunneling layer, deposition processes and solution processes can be performed. The deposition process can be any general deposition process used in the industry, such as thermal evaporation, vacuum deposition, atomic layer deposition (ALD), chemical vapor deposition (CVD), and physical vapor deposition (PVD). The solution process can be any general solution process used in the industry, such as spin coating, slot die coating, blade coating, printing coating, gravure coating, and spray coating. Additionally, preferably, the method for forming a tunneling layer of the present invention may perform a Low Pressure Chemical Vapor Deposition (LPCVD) process or a Plasma-Enhanced Chemical Vapor Deposition (PECVD) process during a Chemical Vapor Deposition (CVD) process, and most preferably, a Low Pressure Chemical Vapor Deposition (LPCVD) process may be performed. Additionally, when performing the Low Pressure Chemical Vapor Deposition (LPCVD) process, silane (SiH4) and oxygen (O2) gases may be used, but are not limited thereto.

[0066] In addition, there are no specific limitations on the thickness of the tunneling layer, but it may preferably have a thickness of 0.5 nm to 10 nm, more preferably 0.7 nm to 5 nm, and even more preferably 0.7 nm to 3 nm. If the thickness is less than 0.5 nm, there may be a problem with the passivation characteristics becoming weak, and if it exceeds 10 nm, there may be a problem with tunneling not occurring.

[0067]

[0068] In addition, the lower cell may include an electric field layer formed on top of the tunneling layer.

[0069] The electric field layer includes a semiconductor material with a band gap larger than that of silicon, and acts as a passivation layer through an electric field, and increases the passivation effect by increasing carrier selectivity. As a method for forming the electric field layer, deposition processes and solution processes can be performed. The deposition process can be any general deposition process used in the industry, such as thermal evaporation, vacuum deposition, atomic layer deposition (ALD), chemical vapor deposition (CVD), and physical vapor deposition (PVD). The solution process can be any general solution process used in the industry, such as spin coating, slot die coating, blade coating, printing coating, gravure coating, and spray coating. In addition, preferably, the method for forming an electric field layer of the present invention may perform a Low Pressure Chemical Vapor Deposition (LPCVD) process or a Plasma-Enhanced Chemical Vapor Deposition (PECVD) process during a Chemical Vapor Deposition (CVD) process, and most preferably, a Low Pressure Chemical Vapor Deposition (LPCVD) process may be performed. In addition, when performing the Low Pressure Chemical Vapor Deposition (LPCVD) process, silane (SiH4), hydrogen (H2), nitrous oxide (N2O), phosphine (PH3), and oxygen (O2) gases may be used.

[0070] In addition, the electric field layer may have a thickness of 40 to 200 nm, preferably 60 to 150 nm, more preferably 80 to 130 nm, and even more preferably 110 to 120 nm. If the thickness of the electric field layer is less than 40 nm, there may be a problem that the passivation role is insufficient, and if it exceeds 200 nm, there may be a problem that the current density decreases due to an increase in parasitic absorption.

[0071] Specifically, the electric field layer may include one or more layers. Additionally, the electric field layer may have a first region containing oxygen elements and a second region not containing oxygen elements, and the first region may be formed with a thickness of 30 to 80 percent relative to the total thickness of the electric field layer. If formed with a thickness of less than 30 percent, there may be a problem that hinders the behavior of carriers, and if formed with a thickness of more than 80 percent, there may be a problem that passivation is insufficient.

[0072] More specifically, the entire layer may include a first layer formed on top of the tunnel layer, a second layer formed on top of the first layer, and a third layer formed on top of the second layer.

[0073] The first layer may contain silicon elements and oxygen elements. Specifically, the first layer may contain 55 to 75 at% of silicon elements, preferably 60 to 70 at%, more preferably 63 to 67 at%, and 20 to 40 at% of oxygen elements, preferably 25 to 35 at%, more preferably 28 to 32 at%, based on the total at%. If the oxygen element exceeds 40 at%, there may be a problem that hinders carrier movement.

[0074] The second layer may contain silicon elements and may not contain oxygen elements.

[0075] Specifically, the second layer may contain 90 to 100 at% of silicon element, preferably 95% to 100 at%, and more preferably 95 to 98 at%, based on the total at%.

[0076] The third layer may contain silicon elements and oxygen elements. Specifically, the third layer may contain 60 to 80 at% of silicon elements, preferably 65 to 75 at%, more preferably 68 to 72 at%, and 10 to 30 at% of oxygen elements, preferably 15 to 25 at%, more preferably 18 to 22 at%, based on the total at%. If the silicon element is less than 60 at%, there may be a problem of interference with carrier behavior, and if it exceeds 80 at%, there may be a problem of increased parasitic absorption due to a low band gap. Additionally, if the oxygen element is less than 10 at%, there may be a problem of increased parasitic absorption due to a low band gap, and if it exceeds 30 at%, there may be a problem of reduced conductivity due to poor crystal formation.

[0077] Meanwhile, the electric field layer of the present invention may have a thickness ratio of 1:1.9 to 2.9:16 to 24, preferably 1:2.16 to 2.64:18 to 22, and more preferably 1:2.28 to 2.52:19 to 21. If the thickness ratio of the first and second layers is less than 1:1.9, there may be a problem of insufficient passivation, and if the thickness ratio exceeds 1:2.9, there may be a problem of hindering the behavior of the carrier. Additionally, if the thickness ratio of the first and third layers is less than 1:16, there may be a problem of insufficient passivation, and if the thickness ratio exceeds 1:24, there may be a problem of hindering the behavior of the carrier.

[0078] In addition, the first layer of the electric field of the present invention may have a thickness of 1 to 20 nm, preferably 2 to 15 nm, and more preferably 3 to 8 nm.

[0079] In addition, the second layer of the electric field layer of the present invention may have a thickness of 4 to 60 nm, preferably 8 to 40 nm, more preferably 8 to 20 nm, and even more preferably 10 to 15 nm.

[0080] In addition, the third layer of the electric field layer of the present invention may have a thickness of 35 to 150 nm, preferably 50 to 130 nm, more preferably 80 to 120 nm, and even more preferably 90 to 110 nm.

[0081]

[0082] In addition, the lower cell may include a passivation layer formed below the emitter layer.

[0083] The passivation layer can be formed on the uneven structure of the emitter layer to have an uneven structure that conforms to the uneven structure, and can be formed as a dielectric, such as aluminum oxide (AlOx), silicon oxide (SiOx), or silicon nitride (SiN). x ), silicon oxide nitride (SiO x N y ), hydrogenated silicon oxide (SiO₂) x :H), hydrogenated silicon nitride (SiN x :H) and hydrogenated silicon oxynitride (SiO₂) x N y It may include one or more selected from :H), and preferably aluminum oxide (AlOx) and silicon nitride (SiN x ) and silicon oxide nitride (SiO x N y It may include ).

[0084] As a method for forming a passivation layer, deposition processes and solution processes may be performed. The deposition process may be any general deposition process used in the industry, such as thermal evaporation, vacuum deposition, atomic layer deposition (ALD), chemical vapor deposition (CVD), or physical vapor deposition (PVD). The solution process may be any general solution process used in the industry, such as spin coating, slot die coating, blade coating, printing coating, gravure coating, or spray coating. Additionally, preferably, the method for forming a tunneling layer of the present invention may perform a Low Pressure Chemical Vapor Deposition (LPCVD) process or a Plasma-Enhanced Chemical Vapor Deposition (PECVD) process during the Chemical Vapor Deposition (CVD) process.

[0085] In addition, there is no separate limit on the thickness of the passivation layer, but preferably, it can have a thickness of 100 nm to 250 nm.

[0086]

[0087] In addition, the lower cell may include a first metal electrode formed below the passivation layer.

[0088] The first metal electrode can be formed by screen printing using a metal paste containing a metal material on the underside of the passivation layer.

[0089] At this time, the metal material may include one or more selected from Pt, Au, Ni, Cu, Ag, In, Ru, Pd, Rh, Ir, Os, C, and conductive polymers.

[0090] In addition, there is no separate limitation on the thickness of the first metal electrode, but preferably, it can have a thickness of 10㎛ to 40㎛.

[0091]

[0092] Meanwhile, the recombination layer is formed on the upper part of the electric field layer, preferably on the upper part of the third layer of the electric field layer, and serves as a layer that induces the recombination of electrons and holes generated in the lower cell and the upper cell, and may be a transparent thin film having ITO (Indium Tin Oxide), FTO (Fluorine-doped Tin Oxide), ATO (Sb2O3-doped Tin Oxide), GTO (Gallium-doped Tin Oxide), ZTO (tin-doped zinc oxide), ZTO:Ga (gallium-doped ZTO), IGZO (Indium-gallium zinc oxide), IZO (Indium-doped zinc oxide), or AZO (Aluminum-doped zinc oxide) deposited thereon.

[0093] In addition, as an example of forming a recombination layer, when using an n- or p-type impurity-doped silicon solar cell as an upper cell, the natural oxide film formed on the surface of the electric field layer of the n- or p-type impurity-doped silicon solar cell is removed, and then residual hydrofluoric acid is removed using ultrapure water, and then a recombination layer can be formed on the third layer of the electric field layer from which the oxide film has been removed through a sputtering process.

[0094] In addition, there is no separate limitation on the thickness of the recombination layer, but it can preferably have a thickness of 5 nm to 50 nm, and more preferably 10 nm to 20 nm.

[0095]

[0096] Furthermore, the upper cell of the present invention may include a hole transport layer, a perovskite light absorption layer, and an electron transport layer.

[0097] Specifically, the hole transport layer of the upper cell can be formed on top of the recombination layer.

[0098] A hole transport layer (HTL, or hole transport layer) is a layer that transports holes formed in a perovskite light-absorbing layer while simultaneously blocking the movement of electrons, and may include inorganic and / or organic hole transport materials.

[0099] At this time, the inorganic hole transport material may include one or more selected from nickel oxide (NiOx), CuSCN, CuCrO2, CuI, CuOx, CuS, CuI, CuPc, CIS, CuGaO2, PbS, MoOx, AlOx (Aluminum oxide), CuAlOx, aluminum oxide nanoparticles, silica nanoparticles, nickel oxide nanoparticles, hafnium nanoparticles, and V2O5.

[0100] In addition, organic hole transporters include carbazole derivatives, polyarylalkane derivatives, phenylenediamine derivatives, arylamines, amino-substituted chalcone derivatives, styrylanthracene derivatives, fluorene derivatives, hydrazone derivatives, stilbene derivatives, silazane derivatives, aromatic tertiary amine compounds, styrylamine compounds, aromatic dimethylidine compounds, porphyrin compounds, phthalocyanine compounds, polythiophene derivatives, polypyrrole derivatives, polyparaphenylenevinylene derivatives, pentacene, coumarin 6 (3-(2-benzothiazolyl)-7-(diethylamino)coumarin), ZnPC (zinc phthalocyanine), CuPC (copper phthalocyanine), TiOPC (titanium oxide phthalocyanine), Spiro-MeOTAD(2,2',7,7'-tetrakis(N,Np-dimethoxyphenylamino)-9,9'-spirobifluorene), F16CuPC(copper(II) 1,2,3,4,8,9,10,11,15,16,17,18,22,23,24,25-hexadecafluoro-29H,31H-phthalocyanine), SubPc (boron subphthalocyanine chloride) and N3(cis-di(thiocyanato)-bis(2,2'-bipyridyl-4,4'-dicarboxylic acid)-ruthenium(II), P3HT(poly[3-hexylthiophene]), MDMO-PPV(poly[2-methoxy-5-(3',7'-dimethyloctyloxyl)]-1,4-phenylene vinylene), MEH-PPV(poly[2-methoxy-5-(2''-ethylhexyloxy)-p-phenylene vinylene]), P3OT(poly(3-octyl thiophene)), POT(poly(octyl thiophene)), P3DT(poly(3-decyl thiophene)),P3DDT(poly(3-dodecyl thiophene), PPV(poly(p-phenylene vinylene)), TFB(poly(9,9'-dioctylfluorene-co-N-(4-butylphenyl)diphenyl amine), 폴리아닐린(Polyaniline), Spiro-MeOTAD([2,22′,7,77′-tetrkis (N,N-di-pmethoxyphenyl amine)-9,9,9′-spirobi fluorine]), PCPDTBT(Poly[2,1,3-benzothiadiazole-4,7-diyl[4,4-bis(2-ethylhexyl-4H-cyclopenta [2,1-b:3,4-b']dithiophene-2,6-diyl]], Si-PCPDTBT(poly[(4,4′-bis(2-ethylhexyl)dithieno[3,2-b:2′,3′-d]silole)-2,6-diyl-alt-(2,1,3-benzothiadiazole)-4,7-diyl]), PBDTTPD(poly((4,8-diethylhexyloxyl), PFDTBT(poly[2,7-(9-(2-ethylhexyl)-9-hexyl-fluorene)-alt-5,5-(4', 7, -di-2-thienyl-2',1', 3'-benzothiadiazole)]), PFO-DBT(poly[2,7-.9,9-(dioctyl-fluorene)-alt-5,5-(4',7'-di-2-.thienyl-2', 1', 3'-benzothiadiazole)]), PSiFDTBT(poly[(2,7-dioctylsilafluorene)-2,7-diyl-alt-(4,7-bis(2-thienyl)-2,1,3-benzothiadiazole)-5,5′-diyl]), PCDTBT(Poly [[9-(1-octylnonyl)-9H-carbazole-2,7-diyl] -2,5-thiophenediyl-2,1,3-benzothiadiazole-4,7-diyl-2,5-thiophenediyl]), PFB(poly(9,It may include one or more selected from 9′-dioctylfluorene-co-bis(N,N′-(4,butylphenyl))bis(N,N′-phenyl-1,4-phenylene)diamine), F8BT(poly(9,9′-dioctylfluorene-cobenzothiadiazole), PEDOT (poly(3,4-ethylenedioxythiophene)), PEDOT:PSS poly(3,4-ethylenedioxythiophene) poly(styrenesulfonate), PTAA (poly(triarylamine)), 2-PACz, MeO-2PACz, Br-2PACz, Me-4PACz, MeO-4PACz, and 6-PACz.

[0101] In addition, as a method for forming a hole transport layer, deposition processes and solution processes can be performed. The deposition process can be any general deposition process used in the industry, such as thermal evaporation, vacuum deposition, atomic layer deposition (ALD), chemical vapor deposition (CVD), and physical vapor deposition (PVD). The solution process can be any general solution process used in the industry, such as spin coating, slot die coating, blade coating, printing coating, gravure coating, and spray coating.

[0102] In addition, there is no separate limit on the thickness of the hole transport layer, but preferably it can have a thickness of 5 nm to 40 nm, and more preferably 5 nm to 25 nm.

[0103]

[0104] The perovskite light absorption layer of the upper cell can be formed on top of the hole transport layer.

[0105] The perovskite light-absorbing layer of the upper cell may include a general perovskite material applied to the light-absorbing layer of a solar cell, and as a preferred example, may include a perovskite material represented by the following chemical formula 1.

[0106] [Chemical Formula 1]

[0107] CMX3

[0108] In the above Formula 1, C is a monovalent cation and may include an amine, ammonium, a Group 1 metal, a Group 2 metal, and / or other cation or cation-like compound, preferably formamidinium (FA), methylammonium (MA), FAMA, CsFAMA, CsFA, or N(R)4 + (Here, R may be the same or different group, and R may be a straight-chain alkyl group having 1 to 5 carbon atoms, a branched-chain alkyl group having 3 to 5 carbon atoms, a phenyl group, an alkylphenyl group, an alkoxyphenyl group, or an alkyl halide.)

[0109] In addition, M of Chemical Formula 1 is a divalent cation and may include one or two types selected from Fe, Co, Ni, Cu, Sn, Pb, Bi, Ge, Ti, Eu, and Zr.

[0110] In addition, X of Formula 1 is a monovalent anion and may include one or more halide elements selected from F, Cl, Br, and I and / or a Group 16 anion, and in a preferred example, X is I x Br 3-x (0 ≤ x ≤ 3) can be.

[0111] And, as a preferred embodiment of Chemical Formula 1, FAPbI x Br 3-x (0 ≤ x ≤ 3), MAPbI x Br 3-x(0 ≤ x ≤ 3), CSFAPbI x Br 3-x (0 ≤ x ≤ 3), CSMAFAPbI x Br 3-x (0 ≤ x ≤ 3), CH3NH3PbX3(X= Cl, Br, I, BrI2, or Br2I), CH3NH3SnX3(X= Cl, Br or I), CH(=NH)NH3PbX3(X= Cl, Br, I, BrI2, or Br2I) or CH(=NH)NH3SnX3(X= Cl, Br or I).

[0112] Meanwhile, the perovskite light-absorbing layer may be a single layer composed of the same perovskite material, or a multilayer structure in which multiple layers composed of different perovskite materials are stacked, and may include a different type of perovskite material different from the one type of perovskite material having a pillar shape, plate shape, needle shape, wire shape, rod shape, etc. within the light-absorbing layer composed of one type of perovskite material.

[0113] In addition, methods for forming a perovskite light-absorbing layer may include deposition processes and solution processes. The deposition process may be any general deposition process used in the industry, such as thermal evaporation, vacuum deposition, atomic layer deposition (ALD), chemical vapor deposition (CVD), or physical vapor deposition (PVD). The solution process may be any general solution process used in the industry, such as spin coating, slot die coating, blade coating, printing coating, gravure coating, or spray coating.

[0114] In addition, there is no separate limit on the thickness of the perovskite light absorption layer, but it can preferably have a thickness of 50 nm to 800 nm, and more preferably 400 nm to 700 nm.

[0115]

[0116] The electron transport layer of the upper cell can be formed on top of the perovskite light absorption layer. Additionally, an intermediate layer may be further included between the electron transport layer of the upper cell and the perovskite light absorption layer.

[0117] The electron transporting layer (ETL, or electron transport layer) is a layer that transports electrons formed in the perovskite light-absorbing layer while simultaneously blocking the movement of holes.

[0118] The electron transport layer may include one or more selected from tin oxide (SnOx), tin oxide (SnO2), titanium dioxide (TiO2), zinc oxide (ZnO), barium tin oxide (BaSnO3), niobium hydroxide (NbOH) and niobium pentoxide (Nb2O5).

[0119] In addition, the electron transport layer may include inorganic and / or organic materials.

[0120] At this time, the inorganic material may include one or more selected from nickel oxide (NiOx), CuSCN, CuCrO2, CuI, CuOx, CuS, CuI, CuPc, CIS, CuGaO2, PbS, MoOx, AlOx (Aluminum oxide), CuAlOx, aluminum oxide nanoparticles, silica nanoparticles, nickel oxide nanoparticles, hafnium nanoparticles, and V2O5.

[0121] In addition, organic materials include carbazole derivatives, polyarylalkane derivatives, phenylenediamine derivatives, arylamine derivatives, amino-substituted chalcone derivatives, styrylanthracene derivatives, fluorene derivatives, hydrazone derivatives, stilbene derivatives, silazane derivatives, aromatic tertiary amine compounds, styrylamine compounds, aromatic dimethylidine compounds, porphyrin compounds, phthalocyanine compounds, polythiophene derivatives, polypyrrole derivatives, polyparaphenylenevinylene derivatives, pentacene, coumarin 6 (3-(2-benzothiazolyl)-7-(diethylamino)coumarin), ZnPC (zinc phthalocyanine), CuPC (copper phthalocyanine), TiOPC (titanium oxide phthalocyanine), Spiro-MeOTAD(2,2',7,7'-tetrakis(N,Np-dimethoxyphenylamino)-9,9'-spirobifluorene), F16CuPC(copper(II) 1,2,3,4,8,9,10,11,15,16,17,18,22,23,24,25-hexadecafluoro-29H,31H-phthalocyanine), SubPc (boron subphthalocyanine chloride) and N3(cis-di(thiocyanato)-bis(2,2'-bipyridyl-4,4'-dicarboxylic acid)-ruthenium(II), P3HT(poly[3-hexylthiophene]), MDMO-PPV(poly[2-methoxy-5-(3',7'-dimethyloctyloxyl)]-1,4-phenylene vinylene), MEH-PPV(poly[2-methoxy-5-(2''-ethylhexyloxy)-p-phenylene vinylene]), P3OT(poly(3-octyl thiophene)), POT(poly(octyl thiophene)), P3DT(poly(3-decyl thiophene)),P3DDT(poly(3-dodecyl thiophene), PPV(poly(p-phenylene vinylene)), TFB(poly(9,9'-dioctylfluorene-co-N-(4-butylphenyl)diphenyl amine), 폴리아닐린(Polyaniline), Spiro-MeOTAD([2,22′,7,77'-tetrkis (N,N-di-pmethoxyphenyl amine)-9,9,9′'-spirobi fluorine]), PCPDTBT(Poly[2,1,3-benzothiadiazole-4,7-diyl[4,4-bis(2-ethylhexyl-4H-cyclopenta [2,1-b:3,4-b']dithiophene-2,6-diyl]], Si-PCPDTBT(poly[(4,4′'-bis(2-ethylhexyl)dithieno[3,2-b:2′',3′'-d]silole)-2,6-diyl-alt-(2,1,3-benzothiadiazole)-4,7-diyl]), PBDTTPD(poly((4,8-diethylhexyloxyl), PFDTBT(poly[2,7-(9-(2-ethylhexyl)-9-hexyl-fluorene)-alt-5,5-(4', 7, -di-2-thienyl-2',1', 3'-benzothiadiazole)]), PFO-DBT(poly[2,7-.9,9-(dioctyl-fluorene)-alt-5,5-(4',7'-di-2-.thienyl-2', 1', 3'-benzothiadiazole)]), PSiFDTBT(poly[(2,7-dioctylsilafluorene)-2,7-diyl-alt-(4,7-bis(2-thienyl)-2,1,3-benzothiadiazole)-5,5′'-diyl]), PCDTBT(Poly [[9-(1-octylnonyl)-9H-carbazole-2,7-diyl] -2,5-thiophenediyl-2,1,3-benzothiadiazole-4,7-diyl-2,5-thiophenediyl]), PFB(poly(9,It may include one or more selected from 9′'-dioctylfluorene-co-bis(N,N′'-(4,butylphenyl))bis(N,N′'-phenyl-1,4-phenylene)diamine), F8BT(poly(9,9′'-dioctylfluorene-cobenzothiadiazole), PEDOT (poly(3,4-ethylenedioxythiophene)), PEDOT:PSS poly(3,4-ethylenedioxythiophene) poly(styrenesulfonate), PTAA (poly(triarylamine)), 2-PACz, MeO-2PACz, Br-2PACz, Me-4PACz, MeO-4PACz, and 6-PACz.

[0122] In addition, the electron transport layer may include fullerene-based organic materials. In this case, the fullerene-based organic material is C 60 , C 70 It may include one or more selected from PC60BM and PC70BM.

[0123] In addition, deposition processes and solution processes can be performed as methods for forming the electron transport layer. The deposition process can be any general deposition process used in the industry, such as thermal evaporation, vacuum deposition, atomic layer deposition (ALD), chemical vapor deposition (CVD), and physical vapor deposition (PVD). The solution process can be any general solution process used in the industry, such as spin coating, slot die coating, blade coating, printing coating, gravure coating, and spray coating.

[0124] In addition, there is no separate limit on the thickness of the electron transport layer, but preferably it can have an average thickness of 3 to 300 nm, and more preferably 5 to 200 nm.

[0125]

[0126] The intermediate layer may include a fullerene-based organic material and lithium fluoride (LiF). In this case, the fullerene-based organic material may include one or more selected from C60 fullerene, C70 fullerene, PC60BM, and PC70BM, and preferably may include C60 fullerene.

[0127] In addition, deposition processes and solution processes can be performed as methods for forming an intermediate layer. The deposition process can be any general deposition process used in the industry, such as thermal evaporation, vacuum deposition, atomic layer deposition (ALD), chemical vapor deposition (CVD), and physical vapor deposition (PVD). The solution process can be any general solution process used in the industry, such as spin coating, slot die coating, blade coating, printing coating, gravure coating, and spray coating.

[0128] In addition, there is no separate limit on the thickness of the intermediate layer, but it can preferably have an average thickness of 0.5 to 30 nm, and more preferably 0.5 to 10 nm.

[0129]

[0130] Furthermore, the upper cell may include a transparent electrode formed on the upper part of the electron transport layer.

[0131] A transparent electrode can be formed on top of an electron transport layer through a deposition process. At this time, the deposition can be performed using a general deposition process used in the industry, and preferably, the deposition process can be performed using a sputtering method.

[0132] In addition, the transparent electrode may be a transparent thin film with ITO (Indium Tin Oxide), FTO (Fluorine-doped Tin Oxide), ATO (Sb2O3-doped Tin Oxide), GTO (Gallium-doped Tin Oxide), ZTO (tin-doped zinc oxide), ZTO:Ga (gallium-doped ZTO), IGZO (Indium-gallium-zinc oxide), IZO (Indium-doped zinc oxide), or AZO (Aluminum-doped zinc oxide) deposited thereon.

[0133] In addition, there is no separate limit on the thickness of the transparent electrode, but preferably it can have a thickness of 30 to 200 nm, and more preferably 30 to 100 nm.

[0134]

[0135] In addition, the upper cell may include a second metal electrode formed on the upper part of the transparent electrode.

[0136] The second metal electrode can be formed by using a screen printing method with a metal paste containing a metal material on top of the transparent electrode.

[0137] At this time, the metal material may include one or more selected from Pt, Au, Ni, Cu, Ag, In, Ru, Pd, Rh, Ir, Os, C, and conductive polymers.

[0138] In addition, there is no separate limit on the thickness of the second metal electrode, but preferably, it can have a thickness of 3㎛ to 15㎛.

[0139]

[0140] Meanwhile, the method for manufacturing a tandem perovskite solar cell of the present invention includes steps 1 to 5.

[0141] The first step of the method for manufacturing a tandem perovskite solar cell according to the present invention may be to form an emitter layer on the lower part of a silicon substrate. At this time, the silicon substrate and the emitter layer are as described above. Specifically, when using n-type conductive crystalline silicon doped with phosphorus (P) as a dopant as the silicon substrate, a p-type conductive emitter layer may be formed by doping boron (B) on the lower part of the silicon substrate through a diffusion process using boron tribromide (BBr3) gas in order to form a pn junction with the silicon substrate. In addition, a silicon substrate having a textured surface may be used.

[0142] The second step of the method for manufacturing a tandem perovskite solar cell according to the present invention may form a tunneling layer on a silicon substrate. At this time, the tunneling layer is as described above. Specifically, the upper surface of the silicon substrate may be flattened through a chemical etching process, and silicon oxide (SiOx) may be deposited on the flattened silicon substrate through a Low Pressure Chemical Vapor Deposition (LPCVD) process using silane (SiH4) and oxygen (O2) gases to form a tunneling layer.

[0143] The third step of the method for manufacturing a tandem perovskite solar cell according to the present invention may form an electric field layer on top of the tunneling layer formed in the second step. Specifically, the third step of the method for manufacturing a tandem perovskite solar cell according to the present invention may form an electric field layer in which a first layer, a second layer, and a third layer are sequentially stacked on top of the tunneling layer formed in the second step. At this time, the electric field layer is as described above. Specifically, the electric field layer may be formed by forming a first layer on top of the tunneling layer, forming a second layer on top of the first layer, and forming a third layer on top of the second layer through a Low Pressure Chemical Vapor Deposition (LPCVD) process using silane (SiH4), hydrogen (H2), nitrous oxide (N2O), phosphine (PH3), and oxygen (O2) gases.

[0144] The fourth step of the method for manufacturing a tandem perovskite solar cell according to the present invention may sequentially form a passivation layer and a first metal electrode below the emitter layer formed in the first step. At this time, the passivation layer and the first metal electrode are as described above. Specifically, after depositing aluminum oxide (AlOx) below the emitter layer through an atomic layer deposition (ALD) process, silicon nitride (SiN₂) is deposited through a plasma-enhanced chemical vapor deposition (PECVD) process using silane (SiH₄), hydrogen (H₂), oxygen (O₂), nitrogen (N₂), and nitrous oxide (N₂O) gases. x ) and silicon oxide nitride (SiO x N y A passivation layer can be formed by depositing ) and a first metal electrode can be formed on the underside of the passivation layer through a printing process using silver paste (Ag paste).

[0145] The fifth step of the method for manufacturing a tandem perovskite solar cell of the present invention may sequentially form a recombination layer and an upper cell on the upper surface of the electric field layer formed in the third step, preferably on the upper surface of the third layer of the electric field layer. At this time, the recombination layer and the upper cell are as described above.

[0146] Specifically, a recombination layer, a hole transport layer, a perovskite light absorption layer, an intermediate layer, an electron transport layer, a transparent electrode, and a second metal electrode can be sequentially formed on the upper surface of the electric field layer, preferably on the upper surface of the third layer of the electric field layer. At this time, the hole transport layer, the perovskite light absorption layer, the intermediate layer, the electron transport layer, the transparent electrode, and the second metal electrode are each as described above.

[0147]

[0148] The present invention will be explained in more detail below through examples, but the following examples are not intended to limit the scope of the invention and should be interpreted as being for the purpose of aiding understanding of the invention.

[0149]

[0150] Example 1: Preparation of a tandem silicon / perovskite heterojunction solar cell

[0151] (1) As a silicon substrate, a crystalline silicon of the n-type conductive type (thickness: 150 μm) doped with phosphorus (P) as a dopant having a textured surface was prepared.

[0152] (2) In order to form a pn junction with a silicon substrate, a p-type conductive emitter layer was formed by doping boron (B) into the lower part of the silicon substrate through a diffusion process using boron tribromide (BBr3) gas.

[0153] (3) Next, the upper surface of the silicon substrate was flattened through a chemical etching process using hydrofluoric acid (HF), hydrochloric acid (HCl), and potassium hydroxide (KOH) as etching solutions, and silicon oxide (SiOx) was deposited on the flattened silicon substrate through a low-pressure chemical vapor deposition (LPCVD) process using silane (SiH4) and oxygen (O2) gas to form a tunneling layer with a thickness of 1 nm.

[0154] (4) Next, a surface field layer with a thickness of 117 nm was formed on top of a tunneling layer through a Low Pressure Chemical Vapor Deposition (LPCVD) process using silane (SiH4), hydrogen (H2), nitrous oxide (N2O), phosphine (PH3) and oxygen (O2) gases, having a structure in which a first layer with a thickness of 5 nm, a second layer with a thickness of 12 nm, and a third layer with a thickness of 100 nm were sequentially stacked.

[0155] (5) Next, 15 nm of aluminum oxide (AlOx) is deposited on the underside of the emitter layer through an atomic layer deposition (ALD) process using trimethylaluminum (TMA) and water vapor (H2O) as precursors, and then silicon nitride (SiN) is deposited through a plasma-enhanced chemical vapor deposition (PECVD) process using silane (SiH4), hydrogen (H2), oxygen (O2), nitrogen (N2) and nitrous oxide (N2O) gases. x ) and silicon oxide nitride (SiO x N y ) was deposited to form a passivation layer with a thickness of 150 nm.

[0156] (6) Next, a first metal electrode with a thickness of 20 μm was formed on the underside of the passivation layer through a printing process using silver paste (Ag paste).

[0157] (7) Next, the natural oxide film formed on the surface of the electric field layer was removed using diluted hydrofluoric acid (HF), and a 20 nm thick recombination layer (ITO) was formed on the third layer of the electric field layer through a sputtering process.

[0158] (8) Next, a 20 nm thick nickel oxide (NiOx) was deposited on the recombining layer by sputtering vacuum deposition, and a 5 nm thick Me-4PACz was coated on the deposited nickel oxide by spin coating to form a hole transport layer.

[0159] (9) Next, a yellow light-absorbing layer solution formed by dissolving in dimethylformamide (DMF) and dimethyl sulfoxide (DMSO) on top of the hole transport layer is formed by spin coating, and a perovskite light-absorbing layer (CSFAPbI) having a 400 nm thick perovskite crystal structure is formed by heat treatment at 150°C for 10 minutes. x Br 3-X (0 ≤ x ≤ 3)) was formed.

[0160] (10) Next, a lithium fluoride (LiF) with a thickness of 1 nm was deposited on the perovskite light-absorbing layer through an evaporator process to form an intermediate layer on the perovskite light-absorbing layer.

[0161] (11) Next, C is formed on the perovskite light-absorbing layer through a thermal evaporation (Evaporator) process. 60 Fullerene (Fullerene C 60 After depositing ), tin oxide (SnO) is deposited through an ALD (atomic layer deposition) process. x An electron transport layer with an average thickness of 6 nm was formed by depositing ).

[0162] (12) Next, a transparent electrode (ITO) with a thickness of 75 nm was formed on top of the electron transport layer through a sputtering process.

[0163] (13) Finally, a tandem silicon / perovskite heterojunction solar cell was manufactured by forming a second metal electrode with a thickness of 10 μm on top of a transparent electrode through a printing process using silver paste (Ag paste), thereby sequentially stacking a first metal electrode, a passivation layer, an emitter layer, a silicon substrate, a tunneling layer, an electric field layer, a recombination layer, a hole transport layer, a perovskite light absorption layer, an electron transport layer, a transparent electrode, and a second metal electrode.

[0164]

[0165] Comparative Example 1: Preparation of a tandem silicon / perovskite heterojunction solar cell

[0166] A tandem silicon / perovskite heterojunction solar cell was manufactured in the same manner as in Example 1. However, unlike in Example 1, the amounts of silane (SiH4), hydrogen (H2), nitrous oxide (N2O), phosphine (PH3), and oxygen (O2) gases used when forming the electric field layer were varied to form a single-layer electric field layer (surface field) with a thickness of 117 nm, thereby finally manufacturing a tandem silicon / perovskite heterojunction solar cell.

[0167]

[0168] Experimental Example 1: TEM Analysis

[0169] To determine the content of silicon (Si), oxygen (O), and other elements among the components constituting the silicon substrate, the first passivation layer, and the electric field layer of the tandem silicon / perovskite heterojunction solar cells prepared in Example 1 and Comparative Example 1, an analysis was performed using a Transmission Electron Microscope (TEM) equipped with an Energy Dispersive Spectrometer (EDS), and the results are shown in Table 1 below.

[0170]

[0171]

[0172] Experimental Example 2: Measurement of Solar Cell Performance

[0173] For each of the tandem silicon / perovskite heterojunction solar cells prepared in Example 1 and Comparative Example 1, the efficiency was measured using a photovoltaic simulation device and a JV Keithley device, and the initial JV curve was used and is shown in Table 2 below.

[0174]

[0175] As can be seen in Table 2, it was confirmed that the tandem silicon / perovskite heterojunction solar cell prepared in Example 1 had a superior power conversion efficiency compared to the tandem silicon / perovskite heterojunction solar cell prepared in Comparative Example 1.

[0176]

[0177] Specific embodiments have been illustrated and described above. However, the invention is not limited to the aforementioned embodiments, and those skilled in the art may make various modifications without departing from the essence of the technical concept of the invention as described in the following claims.

Claims

1. In a tandem perovskite solar cell in which a bottom cell, a recombination layer, and a top cell are sequentially stacked, The lower cell comprises a silicon substrate; a tunneling layer formed on the upper portion of the silicon substrate; and an electric field layer formed on the upper portion of the tunneling layer. A tandem perovskite solar cell comprising one or more layers of the electric field layer.

2. In Paragraph 1, The above electric field layer has a first region containing oxygen elements and a second region not containing oxygen elements, and A tandem perovskite solar cell in which the first region is formed with a thickness of 30 to 80 percent relative to the total thickness of the electric field layer.

3. In Paragraph 1, The above electric field layer A first layer formed on the upper part of the tunnel layer; A second layer formed on the upper part of the first layer; and A third layer formed on the upper part of the second layer; comprising, The above second layer comprises silicon elements and does not comprise oxygen elements, forming a tandem perovskite solar cell.

4. In Paragraph 3, A tandem perovskite solar cell in which the first and third layers each comprise a silicon element and an oxygen element.

5. In Paragraph 1, A tandem perovskite solar cell comprising, with respect to the total at%, 25 to 45 at% silicon element and 55 to 75 at% oxygen element.

6. In Paragraph 5, The above tunneling layer is a tandem perovskite solar cell having a thickness of 0.5 to 10 nm.

7. In Paragraph 3, The above electric field layer is a tandem perovskite solar cell in which the first layer, the second layer, and the third layer have a thickness ratio of 1:1.9 to 2.9:16 to 24.

8. In Paragraph 7, The above electric field layer is a tandem perovskite solar cell having a thickness of 40 to 200 nm.

9. In Paragraph 7, The first layer has a thickness of 1 to 20 nm, The second layer has a thickness of 4 to 60 nm, and The above third layer is a tandem perovskite solar cell having a thickness of 35 to 150 nm.

10. In Paragraph 3, The first layer above comprises 55 to 75 at% silicon element and 20 to 40 at% oxygen element with respect to the total at%, The above second layer contains 90 to 100 at% of silicon elements with respect to the total at%, and The above third layer comprises 60 to 80 at% silicon elements and 10 to 30 at% oxygen elements with respect to the total at%, forming a tandem perovskite solar cell.

11. In Paragraph 1, The upper cell above includes a perovskite light-absorbing layer, and A tandem perovskite solar cell in which the perovskite light-absorbing layer comprises a perovskite material represented by the following chemical formula 1. [Chemical Formula 1] CMX3 In the above chemical formula 1, C is a monovalent cation, M is a divalent cation, and X is a monovalent anion.

12. A first step of forming an emitter layer on the lower part of a silicon substrate; A second step of forming a tunneling layer on the upper surface of the silicon substrate; A third step of forming an electric field layer on top of the tunneling layer; A fourth step of sequentially forming a passivation layer and a first metal electrode below the emitter layer; and A fifth step of sequentially forming a recombination layer and an upper cell on the electric field layer; comprising, A method for manufacturing a tandem perovskite solar cell, wherein the electric field layer comprises one or more layers.

13. In Paragraph 12, The above electric field layer has a first region containing oxygen elements and a second region not containing oxygen elements, and A method for manufacturing a tandem perovskite solar cell, wherein the first region is formed with a thickness of 30 to 80 percent relative to the total thickness of the electric field layer.

14. In Paragraph 12, The above third step forms an electric field layer in which the first, second, and third layers are sequentially stacked on top of the tunneling layer, and The above fifth step is a method for manufacturing a tandem perovskite solar cell, wherein a recombination layer and an upper cell are sequentially formed on the third layer of the electric field layer.

15. In Paragraph 14, A method for manufacturing a tandem perovskite solar cell, wherein the second layer of the above-mentioned electric field layer comprises silicon elements and does not comprise oxygen elements.

16. In Paragraph 12, A method for manufacturing a tandem perovskite solar cell, wherein the tunneling layer is formed through a CVD (chemical vapor deposition) process.

17. In Paragraph 16, A method for manufacturing a tandem perovskite solar cell, wherein the tunneling layer is formed using silane (SiH4) and oxygen (O2) gases.

18. In Paragraph 12, A method for manufacturing a tandem perovskite solar cell, wherein the electric field layer is formed through a CVD (chemical vapor deposition) process.

19. In Paragraph 18, A method for manufacturing a tandem perovskite solar cell, wherein the electric field layer is formed using silane (SiH4), hydrogen (H2), nitrous oxide (N2O), phosphine (PH3), and oxygen (O2) gases.

20. In Paragraph 12, The upper cell above includes a perovskite light-absorbing layer, and A method for manufacturing a tandem perovskite solar cell, wherein the perovskite light-absorbing layer comprises a perovskite material represented by the following chemical formula 1. [Chemical Formula 1] CMX3 In the above chemical formula 1, C is a monovalent cation, M is a divalent cation, and X is a monovalent anion.

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