Apparatus for absorbing residual silicon, apparatus for growing silicon ingot with same, and method for removing residual silicon from crucible

Abstract

Disclosed are an apparatus for absorbing residual silicon, a silicon growing apparatus including same, and a method for removing residual silicon. The disclosed apparatus for absorbing residual silicon comprises: a silicon absorber; an absorber support unit for supporting the silicon absorber; and a driving unit for moving the absorber support unit so that the silicon absorber moves between a standby position spaced apart from liquid silicon accommodated in a crucible and an absorption position immersed in the liquid silicon.

Description

Residual silicon absorption device, silicon ingot growth device including the same, and residual silicon removal method

[0001] The present invention relates to a residual silicon absorption device, a silicon ingot growth device including the same, and a residual silicon removal method for removing residual silicon from a crucible.

[0002]

[0003] The Czochralski crystal growth method is known as a method for manufacturing single-crystal silicon wafers, which are semiconductor materials. Among the Czochralski crystal growth methods, the method of growing an ingot by continuously injecting silicon material into a crucible is called the continuous growth type Czochralski method.

[0004] A silicon ingot growth apparatus using the continuous growth Czochralski method may include a crucible for melting silicon. There is a problem in that the crucible is damaged as the liquid silicon cools and hardens after the silicon ingot growth process is finished or stopped.

[0005]

[0006] The present invention aims to provide a residual silicon absorption device that absorbs and removes residual silicon remaining in a crucible after a silicon ingot growth process is terminated or stopped, a silicon ingot growth device including the same, and a method for removing residual silicon.

[0007]

[0008] A residual silicon absorption device according to the present invention comprises: a silicon absorbent; an absorbent support member that supports the silicon absorbent; and a driving member that moves the absorbent support member so that the silicon absorbent moves between an atmospheric position spaced apart from the liquid silicon contained in a crucible and an absorption position immersed in the liquid silicon.

[0009] The above silicone absorbent may include a plurality of wires that are densely concentrated, have an internal space, and are stretched in the direction of gravity to generate capillary force.

[0010] A plurality of the above wires may include carbon fiber as the main material.

[0011] The above silicone absorbent may include a core in which a plurality of the wires are bundled, and an outer shell that surrounds the core so that the plurality of the wires are not separated.

[0012] The above outer shell may include carbon fiber as the main material.

[0013] The absorbent support member may include a holder into which one end of the silicone absorbent is inserted, and a coupling pin that connects the one end of the silicone absorbent to the holder.

[0014] The holder may include a gas discharge hole through which liquid silicone or gas generated from the silicone absorbent is discharged when the silicone absorbent moves to the absorption position.

[0015] The above standby position is located vertically above the above absorption position, and the driving unit can raise and lower the absorber support in the vertical direction.

[0016] A silicon ingot growth apparatus according to the present invention comprises: a silicon melting crucible for melting solid silicon into liquid silicon; an ingot growth crucible into which the liquid silicon is introduced from the silicon melting crucible and which grows into a silicon ingot; and a residual silicon absorption device for absorbing the liquid silicon remaining in the silicon melting crucible; wherein the residual silicon absorption device comprises: a silicon absorbent; an absorbent support member for supporting the silicon absorbent; and a driving member for moving the absorbent support member so that the silicon absorbent moves between an idle position spaced apart from the liquid silicon contained in the crucible and an absorption position for absorbing the liquid silicon.

[0017] The silicon melting crucible comprises: an inner crucible portion that receives the liquid silicon and contacts the liquid silicon; an outer crucible portion that surrounds and supports the inner crucible portion in surface contact; a discharge guide that guides the liquid silicon to be discharged to the outside of the inner crucible portion and is connected to the inner crucible portion by penetrating the outer crucible portion; and a liquid silicon channel that guides the liquid silicon from the discharge guide to the ingot growth crucible; wherein the inner crucible portion is detachably seated in the outer crucible portion and is not attached to the outer crucible portion, the inner crucible portion may comprise quartz, and the outer crucible portion may comprise graphite.

[0018] A method for removing residual silicon according to the present invention comprises: a silicon absorber waiting step of positioning a silicon absorber at a waiting position spaced apart from a crucible containing liquid silicon; a silicon absorber moving step of moving the silicon absorber to an absorption position so that at least a portion of the silicon absorber is submerged in the liquid silicon; a liquid silicon absorption step of absorbing the liquid silicon into the silicon absorber; and a silicon absorber cooling step of moving the silicon absorber with the absorbed liquid silicon spaced apart from the crucible and cooling the silicon absorber.

[0019] During the time from the above silicon absorber waiting stage to the above liquid silicon absorption stage, the temperature inside the crucible can be maintained at a temperature higher than the melting temperature of silicon.

[0020] The above residual silicon removal method may further include a silicon absorber preheating step prior to the liquid silicon absorption step, in which the silicon absorber is preheated with heat emitted from the crucible and the liquid silicon at a preheating position above the surface of the liquid silicon.

[0021] The above silicone absorbent movement step may include a first silicone absorbent movement step for moving the silicone absorbent from the standby position to the preheating position, and a second silicone absorbent movement step for moving the silicone absorbent from the preheating position to the absorption position after the silicone absorbent preheating step.

[0022] The second silicone absorbent moving step may include the step of moving the silicone absorbent from the preheating position to the absorption position at a speed of 20 mm / min or less.

[0023]

[0024] According to the present invention, liquid silicon remaining in the crucible melting silicon is removed from the crucible after the silicon ingot growth process in a silicon ingot growth apparatus is terminated or stopped. This prevents damage and contamination of the crucible, particularly damage to the outer crucible part. Accordingly, the cost of the silicon ingot can be reduced.

[0025]

[0026] FIG. 1 is a diagram showing the configuration of a silicon ingot growth apparatus according to one embodiment of the present invention.

[0027] Figure 2 is a front view of the silicone absorbent and the absorbent support of Figure 1.

[0028] Figure 3 is a longitudinal cross-sectional view of the silicone absorbent and the absorbent support of Figure 2.

[0029] Figure 4 is an enlarged view of part A of Figure 3.

[0030] Figure 5 is an enlarged cross-sectional view of the silicon melting crucible of Figure 1.

[0031] FIG. 6 is a flowchart illustrating a method for removing residual silicon according to one embodiment of the present invention.

[0032] Figure 7 is a diagram showing the position of the silicon absorber relative to the silicon melting crucible during the silicon absorber preheating step of Figure 6.

[0033] Figure 8 is a diagram showing the position of the silicon absorber relative to the silicon melting crucible during the liquid silicon absorption step of Figure 6.

[0034]

[0035] Hereinafter, a residual silicon absorption device according to the present invention, a silicon ingot growth device including the same, and a method for removing residual silicon will be described with reference to the attached drawings. In this process, the thickness of lines or the size of components shown in the drawings may be exaggerated for clarity and convenience of explanation. Furthermore, the terms described below are defined considering their functions in the present invention, and these may vary depending on the intention or convention of the user or operator. Therefore, the definitions of these terms should be based on the content throughout this specification.

[0036] Furthermore, in this specification, when a part is described as being "connected (or joined)" to another part, this includes not only cases where they are "directly connected (or joined)" but also cases where they are "indirectly connected (or joined)" with other members interposed between them. In this specification, when a part is described as "including (or having) a certain component," this means that, unless specifically stated otherwise, it does not exclude other components but may additionally "include (or have)" other components.

[0037] Additionally, a “unit,” “module,” or “part” for a component as used herein performs at least one function or operation. Furthermore, a “unit,” “module,” or “part” may perform a function or operation by hardware, software, or a combination of hardware and software. Additionally, a plurality of “units,” a plurality of “modules,” or a plurality of “parts,” excluding a “unit,” “module,” or “part” that must be performed on specific hardware or on at least one processor, may be integrated into at least one module. A singular expression includes a plural expression unless the context clearly indicates otherwise.

[0038] Furthermore, throughout this specification, the same reference numerals may refer to the same components. Even if the same or similar reference numerals are not mentioned or described in a specific drawing, they may be described based on other drawings. Additionally, even if a part is not indicated by a reference numeral in a specific drawing, that part may be described based on other drawings. Furthermore, the number, shape, size, and relative differences in size of the detailed components included in the drawings of this application are set for ease of understanding and do not limit the embodiments, and may be implemented in various forms.

[0039] FIG. 1 is a diagram showing the configuration of a silicon ingot growth apparatus according to one embodiment of the present invention, FIG. 2 is a front view of the silicon absorber and absorber support of FIG. 1, FIG. 3 is a longitudinal cross-sectional view of the silicon absorber and absorber support of FIG. 2, FIG. 4 is an enlarged view of part A of FIG. 3, and FIG. 5 is an enlarged cross-sectional view of the silicon melting crucible of FIG. 1.

[0040] Referring to FIGS. 1 to 5, a silicon ingot growth apparatus (100) according to one embodiment of the present invention is an apparatus for growing a single-crystal silicon ingot (30) by a continuous growth type Czochralski method. The silicon ingot growth apparatus (100) includes a silicon melting crucible (220), an ingot growth crucible (110), and a residual silicon absorption device (300).

[0041] The silicon growth device (100) may further include a chamber (101) containing a silicon melting crucible (220) and an ingot growth crucible (110). The silicon melting crucible (220) may be contained in a silicon melting furnace (210).

[0042] The silicon melting crucible (220) heats solid silicon to melt it into liquid silicon. The silicon melting furnace (210) may include a heater (250) around the silicon melting crucible (220) to heat the silicon melting crucible (220).

[0043] The silicon melting crucible (220) may include an inner crucible section (230) and an outer crucible section (240). The inner crucible section (230) is provided with an opening (221) that is open upward so that solid silicon can be introduced.

[0044] The cross-sectional area of ​​the inner crucible (230) may be in the shape of the letter U. The inner surface of the inner crucible (230) may come into contact with solid silicon molten liquid silicon (10). Liquid silicon (10) may be accommodated in the internal space of the inner crucible (230).

[0045] The inner crucible (230) may include quartz. For example, the inner crucible (230) may be formed from a quartz material. At a temperature of 1450°C or higher, which is the melting temperature of silicon, the quartz does not melt, decompose, or split, so that impurities are not mixed into the liquid silicon contained in the inner crucible (230), and contamination of the liquid silicon can be prevented.

[0046] The outer crucible (240) can surround and support the inner crucible (230) so as to be in surface contact. The cross-sectional view of the outer crucible (240) may also be in the shape of the letter U, just like the inner crucible (230).

[0047] The outer crucible (240) may include graphite. For example, the outer crucible (240) may be formed from a graphite material. Graphite has excellent thermal conductivity, so the thermal efficiency of the operation of melting solid silicon into liquid silicon can be improved.

[0048] The inner crucible (230) can be detachably seated on the outer crucible (240). The inner crucible (230) may not be attached or bonded to the outer crucible (240).

[0049] Liquid silicon is introduced from the silicon melting crucible (220) into the ingot growth crucible (110). The silicon ingot growth device (100) may further include a discharge guide (235) and a liquid silicon channel (260).

[0050] The discharge guide (235) guides the liquid silicone (10) to be discharged from the inner crucible (230) to the outside of the inner crucible (230). The discharge guide (235) may protrude from the side wall of the inner crucible (230) to penetrate the outer crucible (240).

[0051] The discharge guide (235) may be formed of the same material as the inner crucible (230). The discharge guide (235) may be formed integrally with the inner crucible (230).

[0052] The liquid silicon channel (260) can guide the liquid silicon (10) discharged from the inner crucible (230) through the discharge guide (235) to the ingot growth crucible (110).

[0053] In the ingot growth crucible (110), liquid silicon (10) introduced into the internal space through the liquid silicon channel (260) is grown into a silicon ingot (30).

[0054] The silicon ingot growth device (100) may further include a rotating support (120), a seed crystal (20), and a cable (130). The rotating support (120) supports and rotates the ingot growth crucible (110).

[0055] The seed crystal (20) is suspended and supported at the bottom of the cable (130). When the seed crystal (20) is in contact with the liquid silicon (10) and the cable (130) is rotated and slowly raised, a single-crystal silicon ingot (30) can be produced from below the seed crystal (20).

[0056] The residual silicon absorption device (300) absorbs the liquid silicon (10) remaining in the silicon melting crucible (220) after the silicon ingot growth operation is finished or stopped, and removes it from the silicon melting crucible (220).

[0057] When the liquid silicon (10) is filled in the silicon melting crucible (220) with the liquid silicon (10) level being slightly lower than the height of the discharge guide (235), the liquid silicon (10) is cooled and hardened into solid silicon, causing the volume to expand and potentially damaging or contaminating not only the inner crucible (230) but also the outer crucible (240). Additionally, the silicon during the hardening process may leak out toward the discharge guide (235), potentially contaminating the discharge guide (235) and the liquid silicon channel (260).

[0058] The residual silicon absorption device (300) includes a silicon absorber (310), an absorber support (330), and a driving unit (301).

[0059] The silicon absorber (310) absorbs the liquid silicon (10) remaining inside the silicon melting crucible (220) by capillary force. The silicon absorber (310) may include carbon fibers that are not deformed by the high-temperature liquid silicon (10).

[0060] The silicone absorbent (310) may include a core (311) and an outer shell (315). The core (311) may include a plurality of wires formed of carbon fiber.

[0061] Multiple wires may include carbon fiber as the main material. For example, the material of multiple wires may be made of 100% carbon fiber.

[0062] Multiple carbon fiber wires can be stretched in the direction of gravity and densely bundled.

[0063] The outer sheath (315) surrounds the core (311) so that the multiple wires constituting the core (311) remain bundled and do not separate from each other. The outer sheath (315) may include carbon fiber as the main material. For example, the material of the outer sheath (315) may be made of 100% carbon fiber.

[0064] The outer layer (315) may be a fabric comprising filaments (320, 325) formed of carbon fiber. Additionally, the outer layer (315) may include a plurality of first filaments (320) extended in the transverse direction and a plurality of second filaments (325) intersecting the plurality of first filaments (320).

[0065] The silicone absorbent (310) may be extended vertically in a roughly cylindrical shape. The silicone absorbent (310), which is manufactured in a cylindrical shape to include a core (311) and an outer shell (315), may be heat-treated before being installed in the residual silicone absorbent device (300).

[0066] Impurities can be removed from the silicon absorber (310) through heat treatment. For example, the silicon absorber (310) can be heat-treated at 700 to 900°C for a period of 1 to 5 hours.

[0067] The absorbent support member (330) supports the silicone absorbent (310). The absorbent support member (330) may include a holder (331) and a coupling pin (350). One end (312) of the silicone absorbent (310) may be inserted into the holder (331). For example, the upper end (312) of the silicone absorbent (310) may be inserted into the holder (331).

[0068] For example, the holder (331) may be a cylindrical member that is open downward and closed at the top. The holder (331) may include a drive unit coupling member (340) at the top to be coupled to the drive unit (301).

[0069] The connecting pin (350) connects one end (312) of the silicone absorbent (310) to the holder (331). The connecting pin (350) can penetrate the side wall of the holder (331). A pin through hole (337) through which one side and the other side of the connecting pin (350) pass may be formed in the side wall of the holder (331).

[0070] The coupling pin (350) may include a head portion having a diameter larger than the inner diameter of the pin through hole (337) on one side. The absorbent support portion (330) may further include a pin fixing ring (360) that penetrates the holder (331) and the silicone absorbent (310) and is coupled to the other side of the coupling pin (350) protruding outward from the holder (331).

[0071] The connecting pin (350) and the pin fixing ring (360) may be provided in multiple pairs. Unlike the embodiment shown in FIGS. 2 and 3, the residual silicone absorption device according to another embodiment of the present invention may include a bolt and a nut fastened to the end of the bolt.

[0072] The holder (331) includes a gas discharge hole (335) through which gas generated in the liquid silicone (10) or the silicone absorber (310) is discharged when at least a portion of the silicone absorber (310) moves to an absorption position where it is submerged in the liquid silicone (10). Multiple gas discharge holes (335) may be formed on the side wall of the holder (331).

[0073] If there is no gas discharge hole (335) in the holder (331), the gas discharge is not smooth, and at the moment a part of the silicone absorber (310) enters the liquid silicone (10) or after the silicone absorber (310) is submerged in the liquid silicone (10), the liquid silicone (10) splashes violently due to the gas and the silicone absorber (310) shakes, which may increase the risk of accidents during operation.

[0074] The absorbent support portion (330) may include graphite with excellent heat resistance. For example, the holder (331), the connecting pin (350), and the pin fixing ring (360) may each be formed from graphite as the main material.

[0075] The driving unit (301) moves the absorber support (330) so that the silicone absorber (310) moves between the standby position and the absorption position.

[0076] The standby position is a position where the silicon absorber (310) is spaced apart from the liquid silicon (10) contained in the silicon melting crucible (220). For example, as shown in FIG. 1, the standby position may be a position where the silicon absorber (310) is positioned above the silicon melting crucible (220) so as to be spaced apart from the silicon melting crucible (220).

[0077] The absorption location is the location where the silicon absorbent (310) absorbs the liquid silicon (10). For example, the absorption location may be a location where a part of the silicon absorbent (310) is submerged in the liquid silicon (10), as shown in FIG. 8. The lower part of the silicon absorbent (310), including the bottom (314) of the silicon absorbent (310), may be submerged in the silicon melting crucible (220).

[0078] In this case, the liquid silicon (10) is absorbed into the silicon absorber (310) by capillary force and can rise to the upper part of the silicon absorber (310) which is higher than the liquid silicon (10) level.

[0079] When the silicon absorber (310) is positioned at the absorption location, the bottom (314) of the silicon absorber (310) may be positioned higher than the bottom surface (225) of the silicon melting crucible (220), specifically the bottom surface (225) of the inner crucible (230), within a range (DS2) of 10 mm. The distance (DS2) between the bottom (314) of the silicon absorber (310) and the bottom surface (225) of the silicon melting crucible (220) at the absorption location may be within 10 mm.

[0080] As can be seen by comparing FIG. 1 and FIG. 8, the standby position may be located vertically above the absorption position. The driving unit (301) can raise and lower the absorber support (330) in the vertical direction. The driving unit (301) may include, for example, an electric motor. The driving unit (301) may be supported by a support frame (303) fixed to the chamber (101).

[0081] FIG. 6 is a flowchart illustrating a method for removing residual silicon according to an embodiment of the present invention, FIG. 7 is a diagram illustrating the position of a silicon absorber relative to a silicon melting crucible during the silicon absorber preheating step of FIG. 6, and FIG. 8 is a diagram illustrating the position of a silicon absorber relative to a silicon melting crucible during the liquid silicon absorption step of FIG. 6.

[0082] Referring to FIG. 1 and FIG. 6 to 8, a residual silicon removal method according to one embodiment of the present invention includes a silicon absorber waiting step (S100), a silicon absorber moving step (S200, S400), a liquid silicon absorption step (S500), and a silicon absorber cooling step (S600). A residual silicon removal method according to one embodiment of the present invention may be performed using a residual silicon absorption device (300) mentioned with reference to FIG. 1 to 5.

[0083] The silicon absorber waiting step (S100) is a step of positioning the silicon absorber (310) at a waiting position spaced apart from the crucible (220) containing the liquid silicon (10). The crucible (220) may be a silicon melting crucible. The liquid silicon (10) may be residual silicon remaining in the silicon melting crucible (220) after the silicon ingot (30) growth operation using the silicon ingot growth device (100) has ended or been stopped.

[0084] The silicon absorber moving step (S200, S400) is a step of moving the silicon absorber (310) to an absorption position so that at least a portion of the silicon absorber (310) is submerged in liquid silicon (10). As described above, at the absorption position, the bottom (314) of the silicon absorber (310) may be positioned higher than the bottom surface (225) of the silicon melting crucible (220) within a range (DS2) of 10 mm.

[0085] If the distance (DS2) between the bottom surface (225) and the bottom (314) of the silicon absorber (310) exceeds 10 mm, an excess amount of liquid silicon (10) remains inside the silicon melting crucible (220) after the liquid silicon absorption step (S500) is completed. Consequently, the silicon melting crucible (220) may be damaged as the residual silicon cools and hardens.

[0086] If the distance (DS2) between the bottom surface (225) and the bottom (314) of the silicon absorber (310) is less than 10 mm, the bottom (314) of the silicon absorber (310) may come into contact with the bottom surface (225) of the silicon melting crucible (220). As a result, impurities may be generated in the inner crucible (230) or the silicon absorber (310). Additionally, as the silicon absorber (310) bends, the liquid silicon (10) may not be smoothly absorbed into the silicon absorber (310).

[0087] The liquid silicone absorption step (S500) is a step of absorbing liquid silicone (10) into the silicone absorbent (310) while at least a part of the silicone absorbent (310) is submerged in liquid silicone (10).

[0088] In the liquid silicon absorption step (S500), the internal temperature of the silicon melting crucible (220) can be maintained at a temperature higher than the melting temperature of silicon. For example, the internal temperature of the silicon melting crucible (220) can be maintained at a temperature of 1500°C or higher. The silicon absorber (310) can be positioned in a stationary state at the absorption position for a period of 10 minutes or more.

[0089] The silicon absorber cooling step (S600) is a step of moving the silicon absorber (310) into which liquid silicon (10) has been absorbed so as to be separated from the silicon melting crucible (220) and cooling the silicon absorber (310) so that the liquid silicon (10) absorbed in the silicon absorber (310) hardens.

[0090] In the silicon absorber cooling step (S600), the silicon absorber (310) may move from the absorption position to the cooling position. For example, the cooling position may be a point between the air position and the absorption position. Alternatively, the cooling position may be the same as the air position.

[0091] A method for removing residual silicon according to one embodiment of the present invention may further include a silicon absorbent preheating step (S300). The silicon absorbent preheating step (S300) is a step of preheating the silicon absorbent (310) with heat released from the silicon melting crucible (310) and the liquid silicon (10) at a preheating position above the surface of the liquid silicon (10) prior to the liquid silicon absorption step (S500).

[0092] Oxygen remaining in the silicone absorber (310) can be removed through the silicone absorber preheating step (S300). If the silicone absorber (310) is not preheated, the liquid silicone (10) may not be smoothly absorbed into the silicone absorber (310). At the preheating location of the silicone absorber (310), the distance (DS1) between the bottom (314) of the silicone absorber (310) and the surface of the liquid silicone (10) may be 10 to 30 mm. In other words, the preheating location may be a position 10 to 30 mm higher than the height of the surface of the liquid silicone (10).

[0093] If the distance (DS1) between the bottom (314) of the silicon absorber (310) and the surface of the liquid silicon (10) is less than 10 mm, the silicon absorber (310) may overheat, and if the distance (DS1) between the bottom (314) of the silicon absorber (310) and the surface of the liquid silicon (10) is greater than 30 mm, the silicon absorber (310) may be separated from the silicon melting crucible (220) and the liquid silicon (10) and may not be sufficiently preheated. The silicon absorber (310) may be preheated in a stationary state for 60 to 120 minutes in the preheating position.

[0094] The silicone absorbent movement step (S200, S400) may include a first silicone absorbent movement step (S200) and a second silicone absorbent movement step (S400). The first silicone absorbent movement step (S200) is a step of moving the silicone absorbent (310) from a standby position to a preheating position. The second silicone absorbent movement step (S400) is a step of moving the silicone absorbent (310) from a preheating position to an absorption position after the silicone absorbent preheating step (S300).

[0095] The second silicone absorbent moving step (S400) may include a step of moving the silicone absorbent (310) from the preheating position to the absorption position at a relatively slow speed of 20 mm / min or less. If the silicone absorbent (310) is moved at a speed faster than 20 mm / min in the second silicone absorbent moving step (S400), the liquid silicone (10) splashes violently and the silicone absorbent (310) shakes at the moment the silicone absorbent (310) is submerged in the liquid silicone (10), which may increase the risk of accidental damage during operation.

[0096] According to the residual silicon absorption device (300) and residual silicon removal method described above, liquid silicon (10) remaining in the silicon melting crucible (220) that melts silicon after the silicon ingot (30) growth process in the silicon ingot growth device (100) is terminated or stopped is removed from the silicon melting crucible (220). This prevents damage and contamination of the silicon melting crucible (220), particularly damage to the outer crucible part (240). Therefore, the cost of the silicon ingot (30) can be reduced.

[0097] Although the present invention has been described with reference to the embodiments illustrated in the drawings, this is merely illustrative, and those skilled in the art will understand that various modifications and equivalent alternative embodiments are possible therefrom. Accordingly, the true technical scope of protection of the present invention should be determined by the claims below.

Claims

1. Silicone absorbent; An absorbent support member that supports the above silicone absorbent; and A residual silicon absorption device characterized by comprising: a driving unit that moves the absorbent support so that the silicon absorbent moves between an atmospheric position spaced apart from the liquid silicon contained in the crucible and an absorption position immersed in the liquid silicon.

2. In Paragraph 1, A residual silicon absorption device characterized by the above silicon absorbent comprising a plurality of wires that are densely concentrated, have an internal space, and are elongated in the direction of gravity to generate capillary force.

3. In Paragraph 2, A residual silicon absorption device characterized by comprising a plurality of the above-mentioned wires as a main material of carbon fiber.

4. In Paragraph 3, The above silicone absorbent is, A core to which a plurality of the above-mentioned wires are bundled, and A residual silicon absorption device characterized by including an outer sheath that surrounds the core so that a plurality of the above-mentioned wires are not separated.

5. In Paragraph 4, A residual silicon absorption device characterized by the above outer shell comprising carbon fiber as the main material.

6. In Paragraph 1, The above absorbent support is, A holder into which one end of the above silicone absorbent is inserted, and A residual silicone absorption device characterized by including a coupling pin that connects one end of the above-mentioned silicone absorbent to the holder.

7. In Paragraph 6, A residual silicon absorption device characterized in that the holder includes a gas discharge hole through which liquid silicon or gas generated from the silicon absorber is discharged when the silicon absorber moves to the absorption position.

8. In Paragraph 1, The above standby position is located vertically above the above absorption position, and A residual silicon absorption device characterized by the above-described driving unit raising and lowering the above-described absorbent support in a vertical direction.

9. Silicon melting crucible for melting solid silicon into liquid silicon; An ingot growth crucible into which the liquid silicon is introduced from the silicon melting crucible and the liquid silicon is grown into a silicon ingot; and A residual silicon absorption device for absorbing the liquid silicon remaining in the silicon melting crucible; comprising The above residual silicon absorption device is, Silicone absorbent; An absorbent support member that supports the above silicone absorbent; and A silicon ingot growth apparatus characterized by comprising: a driving unit that moves the absorber support so that the silicon absorber moves between an atmospheric position spaced apart from the liquid silicon contained in the crucible and an absorption position that absorbs the liquid silicon.

10. In Paragraph 9, The above silicon melting crucible is, An inner crucible portion that accommodates the liquid silicon and comes into contact with the liquid silicon; An outer crucible portion that surrounds and supports the inner crucible portion in surface contact; A discharge guide that guides the liquid silicone to be discharged to the outside of the inner crucible and penetrates the outer crucible to connect to the inner crucible; and A liquid silicon channel that guides the liquid silicon from the discharge guide to the ingot growth crucible; comprising A silicon ingot growth apparatus characterized in that the inner crucible portion is detachably seated on the outer crucible portion and is not attached to the outer crucible portion, the inner crucible portion comprises quartz, and the outer crucible portion comprises graphite.

11. A silicon absorber waiting step in which a silicon absorber is positioned at an atmospheric location spaced apart from a crucible containing liquid silicon; A silicone absorbent moving step of moving the silicone absorbent to an absorption position so that at least a portion of the silicone absorbent is submerged in the liquid silicone; A liquid silicone absorption step for absorbing the liquid silicone into the silicone absorbent; and A method for removing residual silicon, characterized by including a silicon absorbent cooling step of moving the silicon absorbent into which the liquid silicon has been absorbed so as to be separated from the crucible and cooling the silicon absorbent.

12. In Paragraph 11, A method for removing residual silicon, characterized in that the internal temperature of the crucible is maintained at a temperature higher than the melting temperature of silicon during the time from the silicon absorber waiting stage to the liquid silicon absorption stage.

13. In Paragraph 12, A method for removing residual silicon, further comprising a silicon absorber preheating step prior to the liquid silicon absorption step, wherein the silicon absorber is preheated with heat emitted from the crucible and the liquid silicon at a preheating position above the surface of the liquid silicon.

14. In Paragraph 13, The above silicone absorbent transfer step is, A first silicone absorbent transfer step for moving the silicone absorbent from the standby position to the preheating position, and A method for removing residual silicon, characterized by including a second silicon absorbent moving step of moving the silicon absorbent from the preheating position to the absorption position after the silicon absorbent preheating step.

15. In Paragraph 14, A method for removing residual silicone, characterized in that the second silicone absorbent moving step comprises the step of moving the silicone absorbent from the preheating position to the absorption position at a speed of 20 mm / min or less.

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