Non-invasive sensor and electronic device comprising same

Abstract

The present disclosure relates to a non-invasive sensor and an electronic device comprising the non-invasive sensor. The non-invasive sensor comprises: a light source including an active layer; a grating coupler configured to transmit a plurality of rays toward an object for measuring biometric information, by using the plurality of rays and an etching pattern; and a substrate disposed under a reflective layer configured to reflect, toward the object, the plurality of rays transmitted from a plurality of etching regions, in a direction opposite to the object. The reflective layer is disposed under the light source, an optical path, and the grating coupler, and the reflective layer is formed of a material different from that of the substrate.

Description

Non-invasive sensor and electronic device including the same

[0001] The present disclosure relates to a non-invasive sensor for measuring a test object in a non-invasive manner and an electronic device including the same.

[0002] Methods for measuring the content of human body components (e.g., components in blood) can be classified into invasive and non-invasive methods. Invasive measurement methods involve extracting blood from a collection site using a lancet and injecting the blood into a test strip or diagnostic reagent. Non-invasive measurement methods allow for relatively rapid blood glucose measurement as they do not require a blood collection process.

[0003] Recently, electronic devices have been applying methods to measure the content of human body components through non-invasive measurement techniques, including non-invasive sensors.

[0004] The information described above may be provided as related art for the purpose of aiding understanding of the present disclosure. No claim or determination is made as to whether any of the foregoing may be applied as prior art related to the present disclosure.

[0005] Embodiments of the present disclosure may solve at least one of the previously described problems and / or disadvantages and provide the advantages described below. Accordingly, various embodiments of the present disclosure provide a non-invasive sensor and an electronic device including the same.

[0006] Additional embodiments will be presented in the detailed description below, some of which are obvious from the detailed description, and other embodiments can also be presented through learning from the presented embodiments.

[0007] A non-invasive sensor according to at least one embodiment of the present disclosure comprises: a light source including an active layer; a plurality of light rays including light of different wavelengths emitted from the active layer; a grid coupler configured to transmit the plurality of light rays toward an object for measuring bio-information using an etching pattern in which a plurality of etched regions and a plurality of non-etched regions are alternately arranged; an optical path for transmitting light emitted from the light source to the grid coupler; and a substrate disposed below a reflective layer configured to reflect the plurality of light rays transmitted from the plurality of etched regions of the grid coupler toward the object. The reflective layer is disposed below the light source, the optical path, and the grid coupler, and the reflective layer is formed of a material different from the substrate.

[0008] It is formed from materials.

[0009] An electronic device according to at least one embodiment of the present disclosure comprises a housing, a non-invasive sensor for emitting light, an optical interface coupled to the housing and configured to direct light emitted from the non-invasive sensor to an object for inspection, and a photodiode for detecting light reflected from the object for inspection. The non-invasive sensor comprises a light source including an active layer, a plurality of light rays including light of different wavelengths emitted from the active layer, a grid coupler configured to transmit the plurality of light rays toward an object for measuring bio-information using an etching pattern in which a plurality of etched regions and a plurality of non-etched regions are alternately arranged, an optical path for transmitting light emitted from the light source to the grid coupler, and a substrate disposed below a reflective layer configured to reflect the plurality of light rays transmitted from the plurality of etched regions of the grid coupler toward the object. The reflective layer is disposed below the light source, the optical path, and the grid coupler, and the reflective layer is formed of a material different from the substrate.

[0010] The above description of embodiments of the present disclosure, as well as other aspects, features, and benefits, will become more apparent from the following description with reference to the accompanying drawings. In the accompanying drawings:

[0011] FIG. 1 is a block diagram of an exemplary electronic device according to at least one embodiment of the present disclosure.

[0012] FIG. 2 is a block diagram illustrating an example including a configuration capable of non-invasive measurement of an electronic device according to at least one embodiment of the present disclosure.

[0013] FIG. 3 is a rear view of an electronic device including a non-invasive sensor according to at least one embodiment of the present disclosure.

[0014] FIG. 4 is a drawing showing a non-invasive sensor according to at least one embodiment of the present disclosure.

[0015] FIG. 5 is a drawing for illustrating a non-invasive sensor according to at least one embodiment of the present disclosure.

[0016] FIG. 6 is a drawing for illustrating a non-invasive sensor comprising a plurality of reflective layers according to at least one embodiment of the present disclosure.

[0017] FIG. 7 is a drawing for illustrating a non-invasive sensor comprising a plurality of reflective layers according to at least one embodiment of the present disclosure.

[0018] FIG. 8 is a graph showing the light transmittance measured through the number of reflective layers formed on the substrate of a non-invasive sensor according to at least one embodiment of the present disclosure and the thickness of the BOX (buried oxide).

[0019] The various embodiments of this document and the terms used therein are not intended to limit the technical features described in this document to specific embodiments, and should be understood to include various modifications, equivalents, or substitutions of said embodiments.

[0020] In relation to the description of the drawings, similar reference numerals may be used for similar or related components.

[0021] The singular form of the noun corresponding to the item may include one or multiple items, unless the relevant context clearly indicates otherwise.

[0022] In this document, each of the phrases such as "A or B", "at least one of A and B", "at least one of A or B", "A, B or C", "at least one of A, B and C", and "at least one of A, B, or C" may include any one of the items listed together in the corresponding phrase, or all possible combinations thereof.

[0023] The term "and / or" includes a combination of multiple related described components or any of the multiple related described components.

[0024] Terms such as "first," "second," or "first" or "second" may be used simply to distinguish a component from another component and do not limit the components in other aspects (e.g., importance or order).

[0025] Where any (e.g., 1st) component is referred to as "coupled" or "connected" to another (e.g., 2nd) component, with or without the terms "functionally" or "communicationly," it means that said any component may be connected to said other component directly (e.g., via a wire), wirelessly, or through a third component.

[0026] Terms such as "include" or "have" are intended to specify the existence of the features, numbers, steps, actions, components, parts, or combinations thereof described in this document, and do not preclude the existence or addition of one or more other features, numbers, steps, actions, components, parts, or combinations thereof.

[0027] When it is said that a component is "connected," "combined," "supported," or "in contact" with another component, this includes not only cases where the components are directly connected, combined, supported, or in contact, but also cases where they are indirectly connected, combined, supported, or in contact through a third component.

[0028] When it is said that a component is located "on" another component, this includes not only cases where one component is in contact with the other, but also cases where another component exists between the two components.

[0029] In the embodiment, the 'module' or multiple 'parts' may be integrated into at least one module and implemented by at least one processor, except for the 'module' or 'part' that needs to be implemented in specific hardware.

[0030] Operations performed by a module, program, or other component according to various embodiments may be executed sequentially, in parallel, iteratively, or heuristically, or at least some operations may be executed in a different order, omitted, or other operations may be added.

[0031] Meanwhile, the various elements and regions in the drawings are depicted schematically. Accordingly, the technical concept of the present invention is not limited by the relative sizes or spacing depicted in the attached drawings.

[0032] Hereinafter, a non-invasive sensor and an electronic device including a non-invasive sensor according to various embodiments are described in detail with reference to the drawings.

[0033] FIG. 1 is a block diagram of an exemplary electronic device (10) according to at least one embodiment of the present disclosure.

[0034] Referring to FIG. 1, the electronic device (10) may be one of various forms of electronic devices, such as a smart watch (19), a smart ring (19a), and other similar computing devices (not shown). The components, their relationships, and their functions illustrated in FIG. 1 are illustrative only and are not intended to limit the implementations described or claimed in this document. The electronic device (10) may be referred to as a wearable device (e.g., a smart watch (19) and a smart ring (19a)), a small patch-type device attachable to the human body (19b in FIG. 1), a mobile device, a user device, a multifunctional device, a portable device, or a server.

[0035] According to one embodiment, the electronic device (10) may include components comprising at least one processor (11) (hereinafter referred to as processor (11)), at least one memory (12) (hereinafter referred to as memory (12)), at least one display (14) (hereinafter referred to as display (14)), at least one image sensor (15) (hereinafter referred to as image sensor (15)), at least one communication circuit (16) (hereinafter referred to as communication circuit (16)), and / or at least one sensor (17) (hereinafter referred to as sensor (17)). The components are merely exemplary. For example, the electronic device (10) may include other components (e.g., power management integrated circuitry (PMIC), audio processing circuit, antenna, rechargeable battery, or input / output interface). For example, some components may be omitted from the electronic device (10). For example, some components may be integrated into a single component.

[0036] According to one embodiment, the processor (11) may be implemented as one or more integrated circuit (or circuitry) chips and may perform various data processing operations. The processor (11) may include at least one electrical circuit and may process instructions (or programs, data) stored in memory (12) individually or collectively in a distributed manner. The processor (11) may include a processor assembly comprising one or more processing circuits. The processor (11) may include any processing circuit that is operative to control the performance and operation of one or more components of the electronic device (10) (e.g., memory (12), display (14), image sensor (15), communication circuit (16), and sensor (17)). For example, the processor (11) (e.g., application processor (AP)) may be implemented as a system on chip (SoC) (e.g., a single chip or chipset). For example, the processor (11) may be implemented with a plurality of cores (or at least one core circuit), a plurality of chips, or a plurality of chipsets. For example, the processor (11) may include one or more processing circuits. For example, the processor (11) may include one or more processing circuits configured to perform the various functions of the present disclosure individually and / or collectively. As an example without limitation, at least a portion of the processor (11) may be included in a first chip of the electronic device (10), and at least another portion of the processor (11) may be included in a second chip of the electronic device (10) different from the first chip of the electronic device (10).

[0037] For example, the processor (11) may include a central processing unit (11-1), a graphics processing unit (11-2), a neural processing unit (11-3), an image signal processor (11-4), a display controller (11-5), a memory controller (11-6), a storage controller (11-7), a communication processor (11-8), and a sensor interface (11-9). These components of the processor (11) are merely exemplary. For example, the processor (11) may include other components. For example, some components of the processor (11) may be omitted from the processor (11). For example, some components of the processor (11) may be included as separate components of the electronic device (10) outside of the processor (11). For example, some components of the processor (11) (e.g., memory controller (11-6)) may be included in other components (e.g., at least part of memory (12), an interface (e.g. available for connection to at least one component of the electronic device (10)), a display (14) and / or an image sensor (15)).

[0038] According to one embodiment, the processor (11) may cause other components of the electronic device (10) to perform various operations by executing instructions stored in memory (12). The CPU (11-1) (or central processing circuit) may be configured to control the components of the processor (11) based on the execution of instructions stored in memory (12) (e.g., volatile memory (12-1) and / or non-volatile memory (12-2)). The GPU (11-2) (or graphics processing circuit) may be configured to execute parallel operations (e.g., rendering). The NPU (11-3) (or neural processing circuit, or AI (artificial intelligence) chip) may be configured to execute operations for an artificial intelligence model (e.g., convolution computation). An ISP (11-4) (or image signal processing circuit) may be configured to process a raw image acquired through an image sensor (15) into a format suitable for a component within the electronic device (10) or a component of the processor (11). A display controller (11-5) (or display control circuit, or DPU (display processing unit)) may be configured to process an image acquired from a CPU (11-1), GPU (11-2), ISP (11-4), or memory (12) (e.g., volatile memory (12-1)) into a format suitable for a display (14). A memory controller (11-6) (or memory control circuit) may be configured to control reading data from the volatile memory (12-1) and writing data to the volatile memory (12-1). The storage controller (11-7) (or storage control circuit) may be configured to control reading data from non-volatile memory (12-2) and writing data to non-volatile memory (12-2).The CP (11-8) (communication processing circuit) may be configured to process data obtained from a component of the processor (11) into a format suitable for transmitting to another electronic device via the communication circuit (16), or to process data obtained from another electronic device via the communication circuit (16) into a format suitable for processing by the component of the processor (11). For example, the communication circuit (16) may include one or more communication circuits. The sensor interface (11-9) (or sensing data processing circuit, sensor hub) may be configured to process data regarding the state of the electronic device (10) and / or the state around the electronic device (10), obtained through the sensor (17), into a format suitable for the component of the processor (11).

[0039] According to one embodiment, the memory (12) may include one or more storage media (or one or more storage devices). For example, the memory (12) may include a memory assembly comprising one or more storage media. For example, the one or more storage media may include a hard disk drive, a permanent memory such as flash memory, ROM (read-only memory) (e.g., non-volatile memory (12-2)), a semi-permanent memory such as RAM (random access memory) (e.g., volatile memory (12-1)), any other suitable type of storage (or storage assembly), or any combination thereof. The memory (12) may include a cache memory, which is one or more different types of memory used to temporarily store data for a function or feature of the electronic device (10). As an example not limited to, the cache memory may be included within the processor (11). The memory (12) may be fixedly embedded within the electronic device (10) or incorporated into one or more suitable types of components (e.g., a SIM (subscriber identity module) card and / or an SD (secure digital) card) that can be repeatedly inserted into and removed from the electronic device (10).

[0040] For example, memory (12) may store one or more software applications, such as operating system (or system) software applications, firmware software applications, driver software applications, plugin (e.g., add-in, add-on, and / or applet) software applications, and / or any other suitable software applications. For example, the one or more software applications may include instructions executable by the processor (11). For example, memory (12) may store instructions that can be called by an application programming interface (API). For example, memory (12) may store instructions within a library.

[0041] According to one embodiment, the communication circuit (16) may support the establishment of a direct (e.g., wired) communication channel or a wireless communication channel between an electronic device (10) and an external electronic device (e.g., another electronic device (not shown) or a server (not shown)), and the performance of communication through the established communication channel. The communication circuit (16) may include one or more communication processors that operate independently of the processor (11) (e.g., application processor) and support direct (e.g., wired) communication or wireless communication. According to one embodiment, the communication circuit (16) may include a wireless communication circuit (16-1) (e.g., cellular communication circuit, short-range wireless communication circuit, or GNSS (global navigation satellite system) communication circuit) or a wired communication circuit (16-2) (e.g., LAN (local area network), or power line communication circuit). The corresponding communication circuit among these communication circuits can communicate with an external electronic device (not shown) through a first network (e.g., a short-range communication network such as Bluetooth, WiFi (wireless fidelity) direct, or IrDA (infrared data association)) or a second network (e.g., a legacy cellular network, a 5G network, a next-generation communication network, the Internet, or a computer network (e.g., a LAN or WAN (wide area network)). These various types of communication circuits may be integrated into a single component (e.g., a single chip) or implemented as multiple separate components (e.g., multiple chips). The wireless communication circuit (16-1) can identify or authenticate the electronic device (10) within the communication network, such as the first network or the second network, using subscriber information (e.g., international mobile subscriber identity (IMSI)) stored in a subscriber identification module (not shown).

[0042] For example, the wireless communication circuit (16-1) can support 5G networks after 4G networks and next-generation communication technologies, for example, new radio access technology. NR access technology can support high-speed transmission of high-capacity data (enhanced mobile broadband (eMBB)), minimization of terminal power and connection of multiple terminals (massive machine type communications (mMTC)), or high reliability and low latency (ultra-reliable and low-latency communications (URLLC)). The wireless communication circuit (16-1) can support a high-frequency band (e.g., mmWave band) to achieve a high data transmission rate, for example.

[0043] For example, the wireless communication circuit (16-1) can support various technologies for securing performance in the high-frequency band, such as beamforming, massive MIMO (multiple-input and multiple-output), full dimensional MIMO (FD-MIMO), array antenna, analog beam-forming, or large scale antenna. The wireless communication circuit (16-2) can support various requirements specified for the electronic device (10), external electronic device (e.g., another electronic device or network system (e.g., a second network)). According to one embodiment, the wireless communication circuit (16-1) can support a Peak data rate for eMBB realization (e.g., 20 Gbps or more), loss coverage for mMTC realization (e.g., about 164 dB or less), or U-plane latency for URLLC realization (e.g., downlink (DL) and uplink (UL) each 0.5 ms or less, or round trip 1 ms or less).

[0044] According to one embodiment, the sensor (17) may include a non-invasive sensor (referred to as 100 in FIG. 2) capable of measuring components in a non-invasive manner with respect to a test subject (e.g., a test subject (20) in FIG. 2). The non-invasive sensor (100) may emit light of a defined wavelength band. The light emitted from the non-invasive sensor (100) may be incident on a test subject (e.g., human skin) (referred to as 20 in FIG. 2) through an optical space (e.g., an optical lens or an optical film) (referred to as 200 in FIG. 2). The light incident on the test subject (20) may be absorbed and reflected within the test subject (20). The sensor (17) may include a photodiode (referred to as 300 in FIG. 2) that receives light reflected from the test subject (20). Lights reflected from the object under inspection (20) can be incident on a photodiode (300) through an optical interface (200). The photodiode (300) can convert the light signal into an electrical signal. The processor (11) can analyze the object under inspection based on the converted electrical signal and data previously stored in the memory (12).

[0045] At least some of the above components can be connected to each other via a communication method between peripheral devices (e.g., bus, GPIO (general purpose input and output), SPI (serial peripheral interface), or MIPI (mobile industry processor interface)) and exchange signals (e.g., commands or data) with each other.

[0046] According to one embodiment, commands or data may be transmitted or received between the electronic device (10) and an external electronic device (not shown) through a server (not shown) connected to a second network. Each external electronic device (not shown) may be a device of the same or different type as the electronic device (10). According to one embodiment, all or part of the operations performed on the electronic device (10) may be performed on one or more external electronic devices (not shown). For example, if the electronic device (10) needs to perform a function or service automatically or in response to a request from a user or another device, the electronic device (10) may request one or more external electronic devices to perform at least part of the function or service instead of performing the function or service itself or additionally. One or more external electronic devices that receive the request may perform at least part of the requested function or service, or additional functions or services related to the request, and transmit the result of the execution to the electronic device (10). The electronic device (10) may process the above result as is or additionally and provide it as at least part of the response to the request. For this purpose, for example, cloud computing, distributed computing, mobile edge computing (MEC), or client-server computing technology may be used. The electronic device (10) may provide ultra-low latency services using, for example, distributed computing or mobile edge computing. The electronic device (10) may be applied to intelligent services (e.g., smart home, smart city, smart car, or healthcare) based on 5G communication technology and IoT-related technology.

[0047] FIG. 2 is a block diagram showing an example including a configuration capable of non-invasive measurement of an electronic device (10) according to at least one embodiment of the present disclosure.

[0048] Referring to FIG. 2, an electronic device (10) according to one embodiment may include a housing (reference numeral 19-1 of FIG. 1) in which at least a portion includes a light-transmitting region, a non-invasive sensor (100) disposed inside the housing (19-1) and capable of emitting light through the light-transmitting region of the housing (19-1) and receiving light reflected from a subject (20), an optical interface (200), and a photodiode (300). The non-invasive sensor (100) can measure the subject non-invasively. For example, the electronic device (10) to which the non-invasive sensor (100) is applied can measure components in the blood by applying a light signal to the skin without the process of collecting blood using a blood collection needle and analyzing the electrical signal that appears in response to the light signal. In this case, the electronic device (10) does not use a blood collection needle to measure the components of the test subject (e.g., blood), so it can avoid causing pain to the test subject, and can measure the amount of components (blood sugar) in the skin more quickly and accurately, and since it is portable, there may be no restrictions on the measurement location.

[0049] A non-invasive sensor (100) according to one embodiment can measure biomedical properties. For example, the non-invasive sensor (100) can perform cancer detection, disease detection, blood glucose measurement, metabolic fingerprinting in vivo, and / or hyperspectral imaging. The non-invasive sensor (100) can be applied to measure a test target in a non-invasive manner. For example, the test target may be components in blood (e.g., blood glucose, protein, lactic acid, alcohol, glucose, hemoglobin, bilirubin, cholesterol, albumin, creatinine, and glycated hemoglobin) and body fluids (e.g., saliva, sweat, and urine), as well as microorganisms, enzymes, and cells. A non-invasive sensor (100) according to one embodiment may also be applied to a petrochemical device. In this case, the non-invasive sensor (100) may be applied to measure temperature, pressure, and concentration of chemical components in a petrochemical process.

[0050] According to one embodiment, the non-invasive sensor (100) may emit light (e.g., laser) having different wavelengths from a light source to cover a defined wavelength band for measuring a test object. For example, the wavelength band that the non-invasive sensor (100) can cover may be, for example, about 2000 nm to 2400 nm, about 1500 nm to 1800 nm, or about 1000 nm to 1400 nm. For example, the light source may include a plurality of light sources (reference numeral 110 in FIG. 4). Since each of the plurality of light sources (reference numeral 110 in FIG. 4) can emit light of different wavelengths within a defined wavelength band, the defined wavelength band can be covered while minimizing the number of light sources included in the non-invasive sensor (100). Accordingly, the non-invasive sensor (100) can have a compact size and the structure of the light source can be configured more simply, thereby simplifying the manufacturing process and / or reducing manufacturing costs.

[0051] According to one embodiment, the non-invasive sensor (100) can improve the reduction of optical intensity and improve focusing efficiency by minimizing coupling loss that may occur when light emitted from a light source is incident on a waveguide provided on a substrate (e.g., reference numeral 1000 in FIG. 6). The non-invasive sensor (100) can improve measurement reliability by monitoring the emitted light in real time as the internal temperature and / or external temperature of the light source changes when emitting light from the light source, and by controlling the light output when the light intensity changes.

[0052] According to one embodiment, the optical interface (200) can transmit light emitted from the non-invasive sensor (100) to the subject (20). The optical interface (200) can transmit light emitted by the light source to the skin and collect light that is reflected or transmitted through the skin. For example, the optical interface (200) can improve light loss by adjusting the light emitted by the light source so that it is properly incident on the skin. The optical interface (200) can improve detection accuracy by preventing light from being unnecessarily reflected or scattered from the surface of the skin.

[0053] For example, the optical interface (200) may include an optical lens, a light diffuser, and / or an anti-reflective film. If the optical interface (200) includes an optical lens (e.g., a convex lens or an aspherical lens), it can concentrate light into a narrow area of ​​the skin to enhance the measurement signal. If the optical interface (200) includes a light diffuser, it can evenly disperse light so that it is incident on the skin surface with a constant intensity, which may be advantageous for correcting structural irregularities of the skin. If the optical interface (200) includes an anti-reflective film, it can improve the signal-to-noise ratio (SNR) by minimizing light interference through reducing unwanted reflections and improving transmittance.

[0054] According to one embodiment, the photodiode (300) can receive light that is reflected from the test subject (20) and passes through the interface (200) among the light incident on the test subject (20). The photodiode (300) can convert the received light (e.g., optical signal) into an electrical signal that can be processed by the processor (11). For example, the photodiode (300) may be a photodiode sensitive to a specific wavelength so as to be designed based on the absorption characteristics of a specific component (e.g., glucose) of the test subject (20) (e.g., blood). The photodiode (300) may be a photodiode with low noise characteristics so as to have higher accuracy.

[0055] FIG. 3 is a rear view of an electronic device (10) including a non-invasive sensor (100) according to at least one embodiment of the present disclosure.

[0056] In FIG. 3, the electronic device (10) is described based on a smart watch (reference numeral 19 of FIG. 1), but is not necessarily limited thereto and may include various shapes of electronic devices (10).

[0057] In FIG. 3, the electronic device (10) may include a housing (reference numeral 19-1 of FIG. 1), a band (30), and a sensing unit (40).

[0058] In FIG. 3, the description of the housing (19-1) has been described above, so the description thereof is omitted.

[0059] In FIG. 3, the band (30) can be attached to both ends of the electronic device (10). The band (30) is configured to secure the electronic device (10) attached to various locations, such as the user's wrist or ankle. The band (30) can secure the sensing part (40) of the electronic device (10) in contact with the surface of the user's wrist or ankle.

[0060] In FIG. 3, the sensing unit (40) may be positioned at the center of the back surface of the electronic device (10). However, it is not necessarily limited thereto, and the sensing unit (40) may be positioned at various locations on the electronic device (10). The sensing unit (40) is configured to sense the content of components in the user's blood through a non-invasive method on the surface of the user's skin.

[0061] The sensing unit (40) may include a non-invasive sensor (100) and a photodiode (300).

[0062] The non-invasive sensor (100) is configured to emit light having different wavelengths so as to cover a defined wavelength band to measure a target inside the user's skin.

[0063] The non-invasive sensor (100) may be positioned in the center of the sensing unit (40). In FIG. 3, the non-invasive sensor (100) is shown as protruding from the surface of the back of the electronic device (10), but is not necessarily limited thereto, and the non-invasive sensor (100) may be formed in a form embedded in the back of the electronic device (10).

[0064] The photodiode (300) is configured to detect light that enters through an optical interface (reference numeral 200 in FIG. 2) after the light emitted from the non-invasive sensor (100) is reflected from the inspection target inside the user's skin. The photodiode (300) may be positioned at a certain distance from the side portion of the non-invasive sensor (100). Multiple photodiodes (300) may be arranged in a manner that surrounds the side portion of the non-invasive sensor (100).

[0065] Each photodiode (300) may be formed in a square shape. However, it is not necessarily limited to this, and each photodiode (300) may be formed in a shape suitable for receiving light emitted from the non-invasive sensor (100).

[0066] From Fig. 4 onwards, the configuration and structure of the non-invasive sensor (100) will be described in detail.

[0067] FIG. 4 is a drawing showing a non-invasive sensor (100) according to at least one embodiment of the present disclosure.

[0068] The non-invasive sensor (100) may have various configurations arranged on a square substrate (reference numeral 1000 in FIG. 6). The non-invasive sensor (100) may be implemented through silicon photonics technology. The non-invasive sensor (100) may be a photonic integrated circuit that generates, transmits, manipulates, and detects light based on silicon.

[0069] The non-invasive sensor (100) may include a substrate (reference numeral 1000 in FIG. 6), a light source (110), an optical path (105, 106), a grating coupler (180), a plurality of Mach-Zehnder interferometers (MZI, 150), and a plurality of light detection elements (160).

[0070] In FIG. 4, the substrate (1000) may have a square cross-section cut perpendicular to the Z-axis. Various configurations for driving the non-invasive sensor (100) may be arranged on the substrate (1000). For example, a light source (110), an optical path (105, 106), a grating coupler (180), a plurality of Mach-Zehnder interferometers (MZI, 150), and a plurality of photodetectors (160) may each be arranged on the upper surface of the substrate (1000). Here, the optical path (105, 106) and the grating coupler (180) are each different configurations. However, they are not necessarily limited thereto, and the optical path (105, 106) and the grating coupler (180) may be formed integrally. For example, the grating coupler (180) may include the optical path (105, 106). Accordingly, light emitted from the light source (110) can be guided to the light path (105, 106). That is, the light path (105, 106) is configured to transmit the light emitted from the light source (110) to the grating coupler (180). The light path (105, 106) may include an optical waveguide (105) and an optical line (106).

[0071] A light source (110) may be positioned at the center of each side on the upper surface of a substrate (1000). On the substrate (1000), an optical waveguide (105), an optical line (106), and a grid coupler (180) may be positioned sequentially toward the center relative to the light source (110).

[0072] A plurality of Mach-Zehnder interferometers (MZI, 150) and a plurality of photodetectors (160) may be arranged in sequence between light sources (110) toward the edge direction of the substrate (1000).

[0073] A light source (110) may include an active layer (reference numeral 120 in FIG. 6) for emitting light of different wavelengths. A plurality of light rays may include light of different wavelengths emitted from the active layer (120 in FIG. 6). For example, the light source (110) may emit different light within a defined wavelength band. Here, the defined wavelength band may be approximately 2000 nm to 2400 nm, approximately 1500 nm to 1800 nm, or approximately 1000 nm to 1400 nm. However, it is not necessarily limited thereto, and the defined wavelength band may vary depending on the user's settings, the user's skin condition, and the detection target.

[0074] The optical waveguide (105) can transmit light emitted from the light source (110). For example, the optical waveguide (105) may be arranged parallel to each other at a set interval along the length direction of the corresponding light source (110) on the same plane (xy plane). One end of the optical waveguide (105) may be arranged to face the light source (110).

[0075] The optical line (106) can be connected to one end of the optical waveguide (105). The optical line (106) can be positioned at the opposite end of the light source (110) relative to the optical waveguide (105). The optical line (106) can transmit light that has passed through the light source (110) and the optical waveguide (105) to the grating coupler (180).

[0076] The grid coupler (180) is configured to transmit light emitted from the light source (110) at a specific angle toward the z-axis. The light emitted from the light source (110) can be moved toward a detection target on the user's skin through the grid coupler (180). Accordingly, the electronic device (10) can measure the detection target. The grid coupler (180) may include an etching pattern in which a plurality of etched regions and a plurality of non-etched regions are alternately arranged. The grid coupler (180) may be formed as a radial pattern on the xy plane. The grid coupler (180) may be configured to transmit a plurality of light rays toward a target for bio-information measurement using an etching pattern in which a plurality of etched regions and a plurality of non-etched regions are alternately arranged.

[0077] A grating coupler (180) may be included in a plurality of light detection elements (160). The grating coupler (180) may be used to verify light emitted from a light source (110). Specifically, the grating coupler (180) may verify the wavelength and power of the light emitted from the light source (110).

[0078] The Mach-Zehnder interferometer (150) is configured to measure changes in the wavelength of light emitted from a light source (110) in real time. The Mach-Zehnder interferometer (150) can be connected to a portion of the light line (106). Accordingly, the Mach-Zehnder interferometer (150) can measure the degree of interference of light used during the operation of the non-invasive sensor (100).

[0079] Multiple optical detection elements (160) are configured to monitor noise in an optical signal in real time. Multiple optical detection elements (160) can be connected to a Mach-Zehnder interferometer (150) via an optical line.

[0080] FIG. 5 is a drawing for explaining a non-invasive sensor (100) according to at least one embodiment of the present disclosure.

[0081] In FIG. 5, the non-invasive sensor (100) may include an optical waveguide (105), an optical line (106), and a grid coupler (180).

[0082] The optical waveguide (105) can transmit light emitted from the light source (110) in the direction of the optical line (106) and the grating coupler (180). The optical waveguide (105) may include an area that becomes larger as it moves away from the light source (110) and an area that maintains a constant area.

[0083] The optical line (106) can be formed with a narrower area than the optical waveguide (105). The optical line (106) can transmit light that has passed through the optical waveguide (105) to the grating coupler (180).

[0084] However, the optical waveguide (105) and optical line (106) of FIG. 5 are merely exemplary structures, and the optical waveguide (105) and optical line (106) may be formed integrally and may be formed with the same thickness and shape.

[0085] A grid coupler (180) may be positioned on one side of the light path (106). The grid coupler (180) may be formed radially in the opposite direction of the light path (106). That is, a cross-section of the grid coupler (180) viewed in the z-axis direction may be identical to the shape of a WiFi symbol.

[0086] The grid coupler (180) may include an etching pattern in which a plurality of etched regions and a plurality of non-etched regions are alternately arranged. In the grid coupler (180), the lengths of the non-etched regions may be d1, and the lengths of the etched regions may be d2 and d3. Herein, the lengths of the non-etched regions d1 and the lengths of the etched regions d2 and d3 may be the same or different. In the following disclosure, the non-etched regions are referred to by the reference numeral d1, and the etched regions are referred to by the reference numeral d2.

[0087] FIG. 6 is a drawing for explaining a non-invasive sensor (100) including a reflective layer (1100) according to at least one embodiment of the present disclosure.

[0088] In FIG. 6, the substrate (1000) may include a light source (110), an optical waveguide (105), an optical line (106), and a grid coupler (180).

[0089] The substrate (1000) may include a first region (L1) disposed in a part of the light source (110). Additionally, the substrate (1000) may include a second region (L2) formed in the remaining part of the light source (110), the light path (105, 106), and the grid coupler (180). That is, the second region (L2) is a region that includes the remaining area of ​​the light source (110) excluding the first region (L1) disposed in a part of the light source (110), the light path (105, 106), and the grid coupler (180).

[0090] The height of the optical waveguide (105), optical line (106), and grid coupler (180) can be h1.

[0091] The boundary area between the first area (L1) and the second area (L2) may be stepped such that the upper side of the second area (L2) is higher than the upper side of the first area (L1). Here, the height of the step can be set to h4. That is, the height difference between the first area (L1) and the second area (L2) can be set to h4.

[0092] In FIG. 6, the light source (110) may include an active layer (120) for emitting light of different wavelengths. The light emitted from the active layer (120) may be moved in the +x axis direction. Accordingly, the light emitted from the active layer (120) may pass through the optical waveguide (105) and the optical line (106) and be transmitted to the grating coupler (180).

[0093] The optical waveguide (105) and the optical line (106) are formed at a location connected to the active layer (120) of the light source (110) in the second region (L2) of the substrate (1000), so as to guide the light toward the grating coupler (180).

[0094] Here, the optical waveguide (105), the optical line (106), and the grid coupler (180) are each depicted as having different configurations, but the optical waveguide (105), the optical line (106), and the grid coupler (180) may be formed as a single unit. For example, the grid coupler (180) may include the optical waveguide (105) and the optical line (106). Accordingly, light emitted from the light source (110) can be guided to the optical waveguide (105) and the optical line (106) of the grid coupler (180).

[0095] Additionally, a plurality of etched regions may be formed in a radial shape in one region of the optical waveguide (105) of the lattice coupler (180). When viewed from the top side to the bottom, the plurality of etched regions may be formed in a shape similar to Wi-Fi.

[0096] A metal member (130) may be disposed between a substrate (1000) and a light source (110). The metal member (130) may be disposed on the surface of the substrate (1000) to support the light source (110). Specifically, the metal member (130) may be disposed on the surface of a first region (L1) to support the light source (110).

[0097] The size of the metal member (130) may be smaller than the lower area of ​​the light source (110). Additionally, the metal member (130) may be positioned spaced apart from the side of the second area (L2).

[0098] The metal member (130) can electrically connect the substrate (1000) and the grid coupler (180). Additionally, the metal member (130) can adjust the z-axis height of the active layer (120) of the light source (110) to be substantially the same as the z-axis height of the optical waveguide (105), the optical line (106), and the grid coupler (180).

[0099] The metal member (130) can provide electrical contact for power supply to the light source (110) to allow current to be smoothly injected into the active layer (120). The metal member (130) can be formed of a highly conductive metal such as gold (Au), silver (Ag), and copper (Cu).

[0100] A BOX (buried oxide, 1010) may be placed on the lower part of an optical waveguide (105), an optical line (106), and a grid coupler (180), and on the upper part of a substrate (1000). Specifically, the BOX (1010) may be placed on the lower part of an optical waveguide (105), an optical line (106), and a grid coupler (180), and on the upper part of a plurality of reflective layers (1100). Additionally, a TOX (top oxide, 1020) may be placed on the upper part of an optical waveguide (105), an optical line (106), and a grid coupler (180).

[0101] The BOX (1010) may also be referred to as a buried oxide layer. It can provide electrical insulation between the substrate (1000) and the optical waveguide (105), optical line (106), and grid coupler (180). Accordingly, the BOX (1010) can reduce current leakage, thereby improving power efficiency. Additionally, the BOX (1010) has low thermal conductivity, which can control heat diffusion.

[0102] TOX (1020) can provide electrical insulation from the outside. Additionally, TOX (1020) can block leakage current from the outside.

[0103] Additionally, the BOX (1010) can prevent damage to the substrate (1000) from light emitted from the grid coupler (180) toward the substrate (1000). The TOX (1020) can prevent damage to the non-invasive sensor (100) from external air, etc.

[0104] Here, the height of BOX (1010) is h2 and the height of TOX (1020) can be h3.

[0105] The height of the BOX (1010) and the height of the TOX (1020) are not limited, but the height of the TOX (1020) may be thinner than the height of the TOX (1010). For example, the thickness of the TOX (1020) may be formed to a minimum thickness that prevents damage from the outside.

[0106] The thickness of the BOX (1010) can be formed to a minimum thickness that prevents damage to the substrate (1000) caused by light emitted from the grid coupler (180).

[0107] Light emitted from the light source (110) can move upward through the grating coupler (180). However, some light may be lost as it moves downward through the grating coupler (180). The reflective layer (1100) is configured to reflect this lost light and move it upward.

[0108] The reflective layer (1100) can be placed between the substrate (1000) and the BOX (1010). That is, the reflective layer (1100) can be placed on the upper part of the substrate (1000) and on the lower part of the BOX (1010).

[0109] The reflective layer (1100) may be formed from a material different from the substrate (1000), BOX (1010), TOX (1020), and lattice coupler (180). Specifically, the reflective layer (1100) may be formed from a material with a different refractive index from the substrate (1000), BOX (1010), TOX (1020), and lattice coupler (180). For example, the substrate (1000) may be formed from Si material, the BOX (1010) and TOX (1020) from SiO2 material, the lattice coupler (180) from SiN4 material, and the reflective layer (1100) from TiO2 material. However, the material of the reflective layer (1100) is not limited to TiO2, and may be formed from a material with a different refractive index such as SiO2, S-Si, TiO2, SiN, etc.

[0110] The reflective layer (1100) may be formed at different depths on the lower side of the grid coupler (180) in the second region (L2). The reflective layer (1100) may have the same spacing between the reflective layers. However, it is not necessarily limited to this, and the reflective layer (1100) may be formed with different spacing between each reflective layer.

[0111] The reflective layer (1100) may be formed at a depth corresponding to the position of the metal member (130) of the first region (L1) from the surface of the second region (L2). That is, the length between the lowest and highest layers of the reflective layer (1100) may be h4. However, it is not necessarily limited thereto, and the reflective layer (1100) may be disposed in a region at a certain distance from the lower side of the optical waveguide (105), optical line (106), and grid coupler (180).

[0112] The reflective layer (1100) can be placed between the substrates (1000). That is, the substrates (1000) and the reflective layer (1100) may be stacked in a sandwich form.

[0113] The substrate (1000) can be formed of Si, the lattice coupler (180) can be formed of SiN4, and the reflective layer (1100) can be formed of TiO2. Additionally, a BOX (1010) positioned between the lattice coupler (180) and the reflective layer (1100) to prevent light from reaching the substrate (1000), and a TOX (1020) positioned above the lattice coupler (180) to protect against external damage, can each be formed of SiO2. A SiO2 material can be formed between the reflective layers (1100).

[0114] The thickness of the lattice coupler (180) may be thinner than the thickness of the BOX (1010) and TOX (1020). Specifically, the thickness of the lattice coupler (180) may be between 200 nm and 600 nm, and the thickness of the BOX (1010) and TOX (1020) may be between 1 µm and 100 µm.

[0115] FIG. 7 is a drawing for explaining a non-invasive sensor (100) including a reflective layer (1100) according to at least one embodiment of the present disclosure.

[0116] The non-invasive sensor (100) may include a substrate (1000), a reflective layer (1100), a BOX (1010), a grid coupler (180), and a TOX (1020).

[0117] In FIG. 7, the reflective layer (1100) may be arranged in a stacked form between BOX (1010). The reflective layer (1100) may include a material capable of reflecting light. Accordingly, the reflective layer (1100) can reflect light lost from the grating coupler (180) upward. Accordingly, the reflective layer (1100) can increase the sensing efficiency of the non-invasive sensor (100).

[0118] In FIG. 7, the lattice coupler (180) may be formed of Si3N4. The lattice coupler (180) may have a thickness (h1) of about 325 nm. The thickness (h2) of the BOX (1010) may be about 2.8 µm. That is, the distance between the bottom surface of the lattice coupler (180) and the top surface of the uppermost layer of the reflection layer (1100) may be about 2.8 µm. The thickness (h3) of the TOX (1020) may be less than 2.8 µm.

[0119] The lattice coupler (180) may include a non-etching region (d1) and an etching region (d2). The non-etching region (d1) and the etching region (d2) may be formed in a repeating pattern in the +x axis direction. The non-etching region (d1) and the etching region (d2) may each be formed at substantially equal intervals.

[0120] Light passing through the optical waveguide (105) and the optical line (106) can move upward through the grating coupler (180). Meanwhile, there may be light lost downward through the grating coupler (180) after passing through the optical waveguide (105) and the optical line (106). Light passing through the optical waveguide (105) and the optical line (106) can be reflected in the direction of the grating coupler (180) through the reflective layer (1100). Accordingly, the light emission efficiency of the non-invasive sensor (100) can be increased.

[0121] FIG. 8 is a graph showing the light transmittance measured through the number of reflective layers (1100) formed on the substrate (1000) of a non-invasive sensor (100) according to at least one embodiment of the present disclosure and the thickness of a BOX (buried oxide, 1010).

[0122] In FIG. 8, the wavelength of the light emitted from the light source (110) may be in the wavelength range between about 2040 nm and about 2300 nm.

[0123] In FIG. 8, the X-axis represents the thickness (um) of the BOX (buried oxide, 1010), and the Y-axis represents the ratio (%) of light emitted to the upper side of the grating coupler (180) relative to the light emitted from the light source (110).

[0124] In FIG. 8, there are a total of three graphs. The first graph (1100a) is a graph in which the number of reflective layers (1100) is 0. The second graph (1100b) is a graph in which the number of reflective layers (1100) is 20. The third graph (1100c) is a graph in which the number of reflective layers (1100) is 40.

[0125] In FIG. 8, in the first graph (1100a), the second graph (1100b), and the third graph (1100c), the transmittance may be at its lowest when the thickness of the BOX (1010) is t1 and t2. Here, t1 is a thickness between 3.0 µm and 3.5 µm, and t2 is a thickness between 4.0 µm and 4.5 µm.

[0126] However, in the first graph (1100a), the second graph (1100b), and the third graph (1100c), the transmittance may differ when the thickness of the BOX (1010) is t1 and t2. For example, in the first graph (1100a), the second graph (1100b), and the third graph (1100c), the transmittance may be lower when the thickness of the BOX (1010) is t2 than when it is t1.

[0127] In FIG. 8, the first graph (1100a), the second graph (1100b), and the third graph (1100c) may have periodicity.

[0128] When the thickness of the BOX (1010) is t1 and t2, the transmittance may be between 20% and 40%. At one point where the thickness of the BOX (1010) is between 3.5 µm and 4.0 µm, the transmittance may be maximum.

[0129] As the number of reflective layers (1100) increases, the maximum transmittance may increase. For example, the maximum transmittance of the first graph (1100a) in which the number of multiple reflective layers (1100) is 0 may be e1%. Here, e1% may be between 40% and 60%.

[0130] The maximum transmittance of the second graph (1100b) having 20 reflective layers (1100) may be e2%. Here, e2% may be between 60% and 80%.

[0131] The maximum transmittance of the third graph (1100c) having 40 reflective layers (1100) may be e3%. Here, e3% may be between 80% and 100%.

[0132] However, the first graph (1100a), the second graph (1100b), and the third graph (1100c) may differ from each other depending on the wavelength range of the light emitted from the light source (110).

[0133] Each of the components described in this document may consist of one or more components, and the names of said components may vary depending on the type of non-invasive sensor and the electronic device including the non-invasive sensor.

[0134] Although various embodiments of the present disclosure have been described individually above, each embodiment is not required to be implemented alone, and the configuration and operation of each embodiment may be implemented in combination with at least one other embodiment.

[0135] Although preferred embodiments have been illustrated and described above, the present disclosure is not limited to the specific embodiments described above. It is understood that various modifications can be made by those skilled in the art without departing from the essence of the present disclosure as claimed in the claims, and such modifications should not be understood individually from the technical spirit or perspective of the present disclosure.

Claims

1. In a non-invasive sensor (100), A light source (110) including an active layer (120); A plurality of light rays including different wavelengths emitted from the active layer (120); A grid coupler (180) configured to transmit the plurality of light rays toward an object for measuring bio-information using an etching pattern in which a plurality of etching regions and a plurality of non-etching regions are alternately arranged; A light path (105, 106) for transmitting light emitted from the light source (110) to the grating coupler (180); and A substrate (1000) disposed below a reflective layer configured to reflect the plurality of rays transmitted in the opposite direction of the object from the plurality of etching regions of the lattice coupler (180) toward the object; The above-mentioned reflective layer (1100) is disposed below the light source (110), the light path (105, 106), and the grating coupler (180), and The above reflective layer is formed of a material different from the substrate, in a non-invasive sensor (100).

2. In Paragraph 1, The above substrate (1000) is, A first region (L1) disposed in a part of the light source (110); and It includes the remaining part of the light source (110), the light path (105, 106), and the second region (L2) where the grid coupler (180) is formed, and The above reflective layer (1100) is, In the second region (L2), the light path (105, 106) and the grating coupler (180) are formed at different depths on the lower side, and A non-invasive sensor (100) with equal spacing between the above-mentioned reflective layers (1100).

3. In Paragraph 1, The above substrate (1000) is, A first region (L1) disposed in a part of the light source (110); and It includes the remaining part of the light source (110), the light path (105, 106), and the second region (L2) where the grid coupler (180) is formed, and The above reflective layer (1100) is, In the second region (L2), the light path (105, 106) and the grating coupler (180) are formed at different depths on the lower side, and The spacing between the above-mentioned reflective layers (1100) is different for each non-invasive sensor (100).

4. In Paragraph 1, The above optical paths (105, 106) are, It includes an optical waveguide (105) and an optical line (106) that guide the light, formed at a location connected to the active layer (120) of the light source (110) in the second region (L2) of the substrate (1000). The above plurality of etching regions are non-invasive sensors (100) formed in a radial form at one end of the light beam (106).

5. In Paragraph 1, A non-invasive sensor (100) further comprising a metal member (130) disposed on the surface of the first region (L1) and supporting the light source (110).

6. In Paragraph 5, The boundary area between the first region (L1) and the second region (L2) is stepped so that the surface of the second region (L2) is higher than the surface of the first region (L1), and The size of the metal member (130) is smaller than the lower area of ​​the light source (110), and A non-invasive sensor (100) in which the metal member (130) formed on the surface of the first region (L1) and the side surface of the second region (L2) are spaced apart.

7. In Paragraph 6, The above reflective layer (1100) is, A non-invasive sensor (100) formed at a depth corresponding to the position of the metal member (130) of the first region (L1) from the surface of the second region (L2).

8. In Paragraph 1, The above substrate (1000) is, Formed of Si, The above lattice coupler (180) is formed of SiN4, and A BOX (1010) positioned between the grid coupler (180) and the reflective layer (1100) to prevent light from reaching the substrate (1000), and a TOX (1020) positioned on top of the grid coupler (180) to protect against external damage are each formed of SiO2. The above reflective layer (1100) is formed of a material having a refractive index different from that of the substrate (1000) and BOX (1010), a non-invasive sensor (100).

9. In Paragraph 1, The above-mentioned reflective layer (1100) is a non-invasive sensor (100) formed of TiO2.

10. In Paragraph 8, The thickness of the above grid coupler (180) is thinner than the thickness of the above BOX and the above TOX, non-invasive sensor (100).

11. In an electronic device (10), Housing (19-1); Non-invasive sensor (100) for emitting light; An optical interface (200) coupled to the above housing (19-1) and configured to direct light emitted from the non-invasive sensor (100) onto an inspection target; and It includes a photodiode (300) that detects light reflected from the above inspection target, and The above non-invasive sensor (100) is, A light source (110) including an active layer (120); A plurality of light rays including different wavelengths emitted from the active layer (120); A grid coupler (180) configured to transmit the plurality of light rays toward an object for measuring bio-information using an etching pattern in which a plurality of etching regions and a plurality of non-etching regions are alternately arranged; A light path (105, 106) for transmitting light emitted from the light source (110) to the grating coupler (180); and A substrate (1000) disposed below a reflective layer configured to reflect the plurality of rays transmitted in the opposite direction of the object from the plurality of etching regions of the lattice coupler (180) toward the object; The above-mentioned reflective layer (1100) is disposed below the light source (110), the light path (105, 106), and the grating coupler (180), and The above reflective layer is formed of a different material from the substrate, in an electronic device (10).

12. In Paragraph 11, The above substrate (1000) is, A first region (L1) disposed in a part of the light source (110); and It includes the remaining part of the light source (110), the light path (105, 106), and the second region (L2) where the grid coupler (180) is formed, and The above reflective layer (1100) is, In the second region (L2), the light path (105, 106) and the grating coupler (180) are formed at different depths on the lower side, and The electronic device (10) has the same spacing between the above-mentioned reflective layers (1100).

13. In Paragraph 11, The above substrate (1000) is, A first region (L1) disposed in a part of the light source (110); and It includes the remaining part of the light source (110), the light path (105, 106), and the second region (L2) where the grid coupler (180) is formed, and The above reflective layer (1100) is, In the second region (L2), the light path (105, 106) and the grating coupler (180) are formed at different depths on the lower side, and The electronic device (10) has different spacing between the above-mentioned reflective layers (1100).

14. In Paragraph 11, The above optical path (180) is, It includes an optical waveguide (105) and an optical line (106) that guide the light, formed at a position connected to the active layer (120) of the light source (110) in the second region (L2) of the substrate, and The above plurality of etching regions are, An electronic device (10) formed in a radiating form at one end of the light path (106) of the above light path (105, 106).

15. In Paragraph 11, An electronic device (10) further comprising a metal member disposed on the surface of the first region (L1) and supporting the light source.

Images