Substrate processing apparatus

Abstract

The present invention provides a substrate processing apparatus comprising: a process gas inflow part having a first gas line for supplying a first process gas from a process gas storage part toward a process chamber, a second gas line for supplying a second process gas, and a merge line at which the first gas line and the second gas line are merged to be connected to the process chamber; and a backflow prevention part provided at the first gas line or the second gas line inside the process gas inflow part so as to prevent the process gas on the opposite side from flowing backward.

Description

Substrate processing device

[0001] The present invention relates to a substrate processing apparatus, and more specifically, to a substrate processing apparatus capable of preventing opposite process gases from flowing back into a first gas line and a second gas line inside a gas injection part during the process of supplying process gas toward a process chamber.

[0002] Generally, thin film deposition methods that deposit a thin film on the upper surface of a wafer by supplying a reaction gas to the wafer include Atomic Layer Deposition (ALD) and Chemical Vapor Deposition (CVD).

[0003] Atomic layer deposition is a method of adsorbing and depositing onto a wafer by alternately supplying and purging reaction gases, while chemical vapor deposition is a method of depositing onto a wafer by simultaneously spraying reaction gases.

[0004] Among the devices utilizing this thin film deposition method, the single-process chamber that reacts the wafer directly heats a single wafer and uniformly supplies reaction gas to the wafer at a temperature lower than that of the wafer. While this allows for the production of high-quality thin films because only a single wafer is processed, there is a problem where productivity is significantly reduced when using only a single reaction chamber under conditions where the deposition rate must proceed at a low speed.

[0005] In addition, in such atomic layer deposition or chemical vapor deposition processes, a structure is adopted in which multiple nozzles are arranged on the front of a showerhead positioned above the wafer for the purpose of uniformly spraying gas onto the wafer surface. The gas sprayed from the upper showerhead reacts with a precursor on the wafer to form a deposition material, and the remaining gas and residues are discharged through the lower exhaust port of the process chamber.

[0006] However, regarding the process gas supplied toward the process chamber, a problem has been raised in which the source gas and reaction gas flow back to the opposite side due to dead volume or vortex generation during the gas supply process, and in addition, a problem has been raised in which a reaction occurs inside the gas injection section due to this problem, causing process foreign matter.

[0007] The present invention aims to solve such problems, and more specifically, to provide a substrate processing device capable of preventing the backflow of process gases from opposite sides into a first gas line and a second gas line inside a gas injection part during the process of supplying process gas toward the process chamber.

[0008] The problems of the present invention are not limited to those mentioned above, and other unmentioned objectives will be clearly understood by those skilled in the art from the description below.

[0009] To achieve the above objective, the present invention provides a substrate processing apparatus comprising: a first gas line for supplying a first process gas from a process gas storage unit toward a process chamber, a second gas line for supplying a second process gas, and a process gas inlet unit in which the first gas line and the second gas line merge to form a merging line connected to the process chamber; and a backflow prevention unit installed in the first gas line or the second gas line inside the process gas inlet unit to prevent the process gas from the opposite side from flowing back.

[0010] The above backflow prevention member may include a support member mounted along the inner surface of a first or second gas line, and a shielding plate installed on the support member to open or close the first or second gas line.

[0011] The above support member may include a ring member fixed to the inner surface of the first or second gas line and a hook member positioned to protrude downward from the lower side of the ring member and interfere with the shielding plate.

[0012] The ring member may be formed with a diameter that is at least equal to or greater than the inner diameter of the first or second gas line.

[0013] The shielding plate may include a step formed such that its upper surface covers at least the interior of the ring member, and is formed on the outer surface with a diameter larger than the inner surface diameter of the ring member to interfere with the hook member.

[0014] The shielding plate is positioned so that when gas is supplied in a first direction from the first or second gas line, the step is placed on the hook member, and when gas is supplied in a second direction opposite to the first direction from the first or second gas line, the shielding plate is pressed in the direction of the ring member, thereby shielding the first or second gas line.

[0015] The first or second gas line may have an inner diameter that is at least the same or increased with respect to the first direction centered on the ring member.

[0016] The above shielding plate may be formed with one cross-section in the shape of a flat plate, a cone, or a hemisphere.

[0017] The shielding plate may have a convex curved pattern formed facing a second direction opposite to the first direction in which gas is supplied from the first or second gas line.

[0018] When a purge gas is continuously supplied to the shielding plate in a first direction in which gas is supplied from the first or second gas line, a plurality of through-hole patterns penetrating along the first direction may be formed.

[0019] Specific details of other embodiments are included in the detailed description and drawings.

[0020] According to the substrate processing apparatus according to an embodiment of the present invention,

[0021] First, while maintaining a smooth flow of process gas, it is possible to shield the opposite gas line in the event of backflow or back pressure occurring at a pressure higher than the normal purge gas pressure, and

[0022] Second, the shielding plate is made of a lightweight and heat-resistant material, allowing it to easily respond to backflow pressure, and

[0023] Third, by selectively applying the shape or perforation pattern of the shielding plate, it has the effect of being applicable in various forms.

[0024] The effects of the present invention are not limited to those mentioned above, and other unmentioned effects will be clearly understood by those skilled in the art from the description in the claims.

[0025] The summary described above, as well as the detailed description of the preferred embodiments of the present application described below, will be better understood when read in conjunction with the accompanying drawings. Preferred embodiments are illustrated in the drawings for the purpose of illustrating the present invention. However, it should be understood that the present application is not limited to the exact arrangements and means illustrated.

[0026] FIG. 1 is a cross-sectional view illustrating a substrate processing apparatus according to an embodiment of the present invention.

[0027] FIG. 2 is a cross-sectional view illustrating the state in which the substrate support of the substrate processing device shown in FIG. 1 has moved to a process point.

[0028] Figure 3 is a reference diagram illustrating the step of supplying process gas to the substrate processing apparatus shown in Figure 1.

[0029] Figure 4 is a reference diagram schematically illustrating the interior of the gas injection section of the substrate processing device shown in Figure 1.

[0030] FIG. 5 is a perspective view illustrating a backflow prevention section of the substrate processing device shown in FIG. 4.

[0031] Figures 6 and 7 are reference diagrams illustrating the operating state of the backflow prevention unit of the substrate processing device shown in Figure 4.

[0032] FIGS. 8 and 9 are reference diagrams illustrating shielding plates according to embodiments of the backflow prevention unit shown in FIG. 5.

[0033] Hereinafter, preferred embodiments of the present invention will be described in detail with reference to the accompanying drawings. The advantages and features of the present invention, and the methods for achieving them, will become clear by referring to the embodiments described below in detail together with the accompanying drawings. However, the present invention is not limited to the embodiments disclosed below but can be implemented in various different forms. These embodiments are provided merely to ensure that the disclosure of the present invention is complete and to fully inform those skilled in the art of the scope of the invention, and the present invention is defined only by the scope of the claims. Throughout the specification, the same reference numerals refer to the same components.

[0034] The present invention is capable of various modifications and may have various embodiments, and specific embodiments are illustrated and described in the drawings.

[0035] However, this is not intended to limit the invention to specific embodiments, and it should be understood that it includes all modifications, equivalents, and substitutions that fall within the spirit and scope of the invention.

[0036] Terms including ordinal numbers, such as first, second, etc., may be used to describe various components, but said components are not limited by said terms.

[0037] The above terms are used solely for the purpose of distinguishing one component from another.

[0038] For example, without departing from the scope of the present invention, the second component may be named the first component, and similarly, the first component may be named the second component.

[0039] The term "and / or" includes a combination of multiple related listed items or any of the multiple related listed items.

[0040] When it is stated that one component is "connected" or "joined" to another component, it should be understood that while it may be directly connected or joined to that other component, there may also be other components in between.

[0041] On the other hand, when it is stated that one component is "directly connected" or "directly coupled" to another component, it should be understood that there are no other components in between.

[0042] The terms used in this application are used merely to describe specific embodiments and are not intended to limit the invention.

[0043] A singular expression includes a plural expression unless the context clearly indicates otherwise.

[0044] In this application, terms such as "comprising" or "having" are intended to specify the existence of the features, numbers, steps, actions, components, parts, or combinations thereof described in the specification, and should be understood as not precluding the existence or addition of one or more other features, numbers, steps, actions, components, parts, or combinations thereof.

[0045] Hereinafter, embodiments will be described in detail with reference to the attached drawings, provided that identical or corresponding components are given the same reference number regardless of the drawing symbols, and redundant descriptions thereof will be omitted.

[0046] FIG. 1 is a cross-sectional view illustrating a substrate processing apparatus according to an embodiment of the present invention, and FIG. 2 is a cross-sectional view illustrating a state in which a substrate support of the substrate processing apparatus shown in FIG. 1 has moved to a process point.

[0047] Referring to FIGS. 1 and 2, a substrate processing device (10) according to an embodiment of the present invention comprises a process chamber (100), a cover (200), a substrate support (300), a driving unit (400), a shower head (500), and a control unit (600).

[0048] First, the process chamber (100) provides a process processing space (S1) for processing the substrate (W). The process chamber (100) may provide an outlet (110) for discharging out an exhaust gas or byproduct introduced into the interior.

[0049] For example, the outlet (110) may be formed to be connected to the outside through the side wall or bottom surface of the process chamber (100).

[0050] A substrate entry port (120) for the entry and exit of a substrate (W) may be formed on one side of the process chamber (100). The substrate (W) may be brought into the interior of the process chamber (100) or taken out of the process chamber (100) through the substrate entry port (120).

[0051] A shutter (130) may be provided at the substrate entrance (120). The shutter (130) may selectively open or close the substrate entrance (120). When the shutter (130) opens the substrate entrance (120), the substrate (W) may be brought in or taken out through the substrate entrance (120). When a process on the substrate (W) is in progress, the shutter (130) may shield the interior of the process chamber (100) from the outside by closing the substrate entrance (120).

[0052] Additionally, the cover (200) serves to seal the upper opening of the process chamber (100). To this end, the cover (200) may be placed on the upper part of the process chamber (100). The cover (200) may be placed on the upper part of the spray body (510) of the showerhead (500) described later. As the cover (200) seals the upper opening of the process chamber (100), the leakage of process gas and the inflow of external substances through the upper opening of the process chamber (100) can be prevented.

[0053] The cover (200) may include a cover plate (210), a process gas inlet (220), and a process gas inlet pipe (230). The cover plate (210) may be provided in the form of a plate to seal the upper opening of the process chamber (100).

[0054] Additionally, the process gas inlet (220) and the process gas inlet pipe (230) can provide a transport path for the process gas. The process gas inlet (220) may be coupled to the cover plate (210), and the process gas inlet pipe (230) may be coupled to the process gas inlet (220). The process gas inlet pipe (230) may be connected directly or indirectly to a process gas storage unit (not shown). The process gas contained in the process gas storage unit is transported through the process gas inlet pipe (230), and the transported process gas may be delivered to the shower head (500) through the process gas inlet (220). Inside the process gas inlet (220), the entry and exit of the process gas in the direction of the shower head (500) may be controlled to be selective.

[0055] Additionally, the substrate support member (300) can support the substrate (W) from below. The substrate support member (300) may have a mounting surface (or upper surface) on which the substrate (W) can be placed. A process can be performed on the substrate (W) placed on the mounting surface of the substrate support member (300).

[0056] The substrate support (300) can heat the substrate (W). To this end, a heater (not shown) may be provided inside the substrate support (300). Heat emitted from the heater can be transferred to the substrate (W) through the body of the substrate support (300).

[0057] The substrate support (300) may include a grounded electrode (not shown). As described below, when RF power is supplied to the shower head (500), an electric field may be formed between the shower head (500) and the substrate support (300).

[0058] A support pin (310) may be provided in the substrate support member (300). The support pin (310) may support the substrate (W). Specifically, the support pin (310) may support the substrate (W) such that the substrate (W) is spaced apart from the mounting surface of the substrate support member (300) by a certain distance.

[0059] In the present invention, the substrate support member (300) can move in an up-and-down direction inside the process chamber (100). FIG. 1 shows the substrate support member (300) resting on the bottom surface of the process chamber (100), and FIG. 2 shows the substrate support member (300) moving to an upper point inside the process chamber (100).

[0060] When a substrate (W) is brought into or taken out of the process chamber (100), the substrate support (300) may be placed on the bottom surface of the process chamber (100) as shown in FIG. 1. When a process is performed on the substrate (W), the substrate support (300) may be moved to an upper point inside the process chamber (100) as shown in FIG. 2. Hereinafter, the location of the substrate support (300) where a process is performed on the substrate (W) is referred to as the process point.

[0061] When a process is performed on a substrate (W), it is preferable that the substrate (W) be placed on the mounting surface of the substrate support (300). As the substrate (W) is placed on the mounting surface of the substrate support (300), the process on the substrate (W) can be performed while preventing movement of the substrate (W).

[0062] Meanwhile, when the substrate (W) is brought into or taken out of the process chamber (100), it is preferable that the substrate (W) be detached from the mounting surface of the substrate support (300). A hand (not shown) of a transport robot (not shown) that transports the substrate (W) can support the lower surface of the substrate (W) to transport the substrate (W). In order to allow the hand of the transport robot to approach the lower surface of the substrate (W), the substrate (W) may be spaced apart from the mounting surface of the substrate support (300) by a certain distance.

[0063] The support pin (310) supports the substrate (W) so that the substrate (W) can be detached from the seating surface of the substrate support (300). The head region of the support pin is positioned to directly contact the lower surface of the substrate (W), and the body region of the support pin is formed to extend in a rod shape toward the downward direction so as to penetrate the substrate support (300). To this end, a through hole may be formed in the substrate support (300).

[0064] The support pin (310) can freely move up and down along the through hole. When the substrate support member (300) is seated on the bottom surface of the process chamber (100), the lower end of the support pin (310) comes into contact with the bottom surface of the process chamber (100), thereby allowing the head area of ​​the support pin (310) to be separated from the seated surface of the substrate support member (300). Meanwhile, when the substrate support member (300) rises, the pin body (312) moves along the through hole, allowing the support pin (310) to descend relative to the substrate support member (300).

[0065] In addition, the driving unit (400) can generate a driving force to selectively move the substrate support (300) in the up and down direction.

[0066] Additionally, the showerhead (500) is provided in the process chamber (100) and performs the function of spraying process gas onto the substrate (W). The showerhead (500) can receive process gas from the process gas inlet (220). The showerhead (500) can be positioned at the top of the process chamber (100). The process gas sprayed from the showerhead (500) is sprayed downward and reaches the substrate (W).

[0067] In the present invention, the process gas may include a source gas and a reaction gas. The source gas and the reaction gas may be injected sequentially. The source gas and the reaction gas may collide with each other and react after being injected from the showerhead (500). Then, the source gas activated by the reaction gas may come into contact with the substrate (W) to perform process treatment on the substrate (W). For example, the activated source gas may be deposited as a thin film on the substrate (W).

[0068] The showerhead (500) may include a spray body (510) and a spray section (520). The spray body (510) may receive process gas. To this end, the spray body (510) may be positioned adjacent to the process gas inlet section (220). Additionally, the spray body (510) may receive RF power. For example, an electrode plate (not shown) receiving RF power may be provided on the ceiling surface of the spray body (510).

[0069] As described above, the substrate support (300) may include a grounded electrode. When RF power is supplied to the electrode plate, an electric field may be formed between the electrode plate and the electrode of the substrate support (300). Due to the electric field formed by the supply of RF power, the process gas introduced into the process chamber (100) is converted into particles in a plasma state, and the plasma particles may react with each other or with the surface of the substrate (W) to perform process treatment on the substrate (W).

[0070] The injection unit (520) is positioned on one side of the injection body (510) and performs the function of injecting process gas introduced into the injection body (510). To this end, the injection unit (520) may be provided with injection holes (521) for injecting process gas. The injection holes (521) may be formed in a pattern set in multiple locations on the injection unit (520) with a shape corresponding to one side of the substrate (W).

[0071] A diffusion space (S2) may be formed between the injection body (510) and the injection section (520). Process gas introduced through the injection body (510) may be injected through a plurality of injection holes (521) after being diffused in the diffusion space (S2).

[0072] Additionally, the guide ring (530) can wrap around the edges of the injection body (510) and the injection part (520) in the form of a ring. In the present invention, the injection body (510) and the injection part (520) can be combined. The guide ring (530) can wrap around the combined portion of the injection body (510) and the injection part (520).

[0073] An edge ring (330) may be formed on the substrate support (300). The edge ring (330) may be arranged in the form of a ring along the edge of the substrate support (300). The edge ring (330) may guide the process gas to move to the lower space through the edge region of the process chamber (100). When the substrate support (300) is located at the process point, the edge ring (330) may be spaced apart from the inner wall of the chamber (100) at a certain distance. Here, the upper space may represent the space where the process gas is introduced and the process on the substrate (W) is performed, and the lower space may represent the space excluding the upper space.

[0074] Additionally, the control unit (600) can perform overall control over the substrate processing device (10). For example, the control unit (600) can control the operation of the shutter (130) to open and close the substrate entry / exit (120), or control the drive unit (400) to move the substrate support (300). Furthermore, the control unit (600) can control the injection of process gas through the shower head (500) or control the supply of RF power to the electrode plate of the shower head (500). At least some of the steps of the substrate processing method described below can be performed under the control of the control unit (600).

[0075] A substrate processing apparatus (10) according to an embodiment of the present invention can deposit a thin film on a substrate (W). A substrate processing apparatus (10) according to an embodiment can deposit a metal thin film on a substrate (W). The source gas according to an embodiment may use a precursor containing at least one element among elements such as silicon (Si), titanium (Ti), zirconium (Zr), aluminum (Al), titanium (Ti), tungsten (W), tantalum (Ta), ruthenium (Ru), and molybdenum (Mo). For example, the source gas may include at least one of titanium tetrachloride (TiCl4), silicon tetrachloride (SiCl4), tantalum bromide (TaBr5), etc. Additionally, the reaction gas may use a precursor containing at least one element among hydrogen (H), oxygen (O), and nitrogen (N). For example, the reaction gas may include ammonia (NH3), hydrogen (H2), argon (Ar), etc. Additionally, the purge gas may be an inert gas comprising at least one element selected from nitrogen (N), argon (Ar), and helium (He). However, the embodiments are not limited thereto, and the source gas and reaction gas of the present invention are not limited thereto.

[0076] The aforementioned process chamber (100) can provide a process processing space (S1) for depositing a thin film on a substrate (W). Inside the process chamber (100), a Plasma Enhanced Chemical Vapor Deposition (PECVD) or Plasma Enhanced Atomic Layer Deposition (PEALD) method may be performed to deposit a thin film on the substrate (W). Since the deposition process using plasma allows for processing at a relatively low temperature, the physical properties of the thin film can be improved.

[0077] FIG. 3 is a reference diagram illustrating the step of supplying process gas to the substrate processing apparatus shown in FIG. 1, and FIG. 4 is a reference diagram schematically illustrating the interior of the gas injection section of the substrate processing apparatus shown in FIG. 1.

[0078] Referring to FIGS. 3 and 4, a substrate processing device (10) according to an embodiment of the present invention may include a process gas inlet (220) and a backflow prevention part (700).

[0079] First, the process gas inlet (220) can be positioned between the process gas inlet pipe (230) connected from the process gas storage unit and the process chamber (100).

[0080] The process gas inlet section (220) may have a first gas line (710), a second gas line (720), and a joining line (730) formed inside.

[0081] The first gas line (710) can supply a first process gas. The first process gas may include, for example, a source gas (①), a source purge gas (②), and a normal purge gas (③).

[0082] The second gas line (720) can supply a second process gas. The second process gas may include, for example, a reaction gas (④), a reaction purge gas (⑤), and a normal purge gas (⑥).

[0083] Additionally, the merging line (730) may be positioned at the leading edge along the first direction, which is the gas supply direction of the first gas line (710) and the second gas line (720). The merging line (730) may be an area where the first gas line (710) and the second gas line (720) are connected to each other. Within the merging line (730), the first process gas or the second process gas may flow simultaneously.

[0084] As shown in FIG. 3, the ALD process steps for one cycle (1 cycle) can be composed of a total of 4 steps.

[0085] First, in the first step, a source gas (①) is supplied, in the second step, a source purge gas (②) is supplied, in the third step, a reaction gas (④) is supplied, and in the fourth step, a reaction purge gas (⑤) can be supplied. Of course, for each step, one source gas (①), one source purge gas (②), one reaction gas (④), and one reaction purge gas (⑤) can be supplied.

[0086] At this time, the constant purge gas (③) is continuously supplied from the first gas line (710) throughout the first to fourth steps, and the constant purge gas can also be continuously supplied from the second gas line (720). Here, the constant purge gas used in the first gas line (710) and the constant purge gas (⑥) used in the second gas line (720) may be of the same type.

[0087] These constant purge gases (③, ⑥) can provide a function to prevent the gases of the first gas line (710) and the second gas line (720) from flowing back to each other during the process of repeating a series of cycles.

[0088] Additionally, a backflow prevention unit (700) may be provided adjacent to the confluence line (730) at the leading ends of the first gas line (710) and the second gas line (720).

[0089] The backflow prevention part (700) provided in the first gas line (710) and the backflow prevention part provided in the second gas line (720) can be applied with the same structure.

[0090] For example, if the pressure of either the first process gas or the second process gas temporarily increases, the process gas may move in the direction of the opposite gas line, and the backflow prevention unit (700) can provide a function to prevent such backflow of the opposite gas.

[0091] In FIG. 4, the valve (v) can selectively control (on / off, or adjust opening) whether each process gas is supplied to the first gas line (710) or the second gas line (720).

[0092] FIG. 5 is a perspective view illustrating a backflow prevention unit of a substrate processing device shown in FIG. 4, and FIG. 6 and FIG. 7 are reference drawings illustrating the operating state of the backflow prevention unit of a substrate processing device shown in FIG. 4.

[0093] Referring to FIGS. 5 to 7, a backflow prevention unit (700) can be placed at each end of the first gas line (710) and the second gas line (720). Since the backflow prevention unit (700) provided in each gas line (710, 720) has the same structure, only one backflow prevention unit provided in the first gas line (710) is described, and redundant descriptions are omitted.

[0094] The backflow prevention part (700) may include a support part (740) and a shielding plate (750).

[0095] The support member (740) may be mounted along the inner surface of the first or second gas line (720). Below, an example is described in which the support member (740) is installed on the inner surface of the first gas line (710).

[0096] The support member (740) may include a ring member (741) and a hook member (742).

[0097] The ring member (741) can be fixed along the end inner surface of the first gas line (710). The ring member (741) can be formed to have a diameter that is at least equal to or greater than the inner diameter (or inner diameter) of the first gas line (710). That is, the first gas line (710) can be formed such that the inner diameter is at least equal to or greater than the inner diameter in the first direction (D1) around the ring member (741). This is to prevent gas pressure loss around the ring member (741) within the first gas line (710).

[0098] Additionally, at least three or more hook members (742) may be provided on the lower surface of the ring member (741). A shielding plate (750) may be placed and supported between the multiple hook members (742). For example, the flow rate of the process gas supplied to the first gas line (710) may be adjusted according to the height of the hook members (742) (or the gap between the lower surface of the ring member (741) and the end of the hook members (742). Each hook member (742) may be provided with a support projection (743) that protrudes in a direction overlapping with the lower surface to support the lower surface of the shielding plate (750). When the pressure of the process gas is provided in the first direction (D1) inside the first gas line (710), the support projection (743) supports the lower part of the shielding plate (750) to prevent the shielding plate (750) from being removed.

[0099] Additionally, the shielding plate (750) may be installed inside a plurality of hook members (742) and positioned so as to be able to move in a first direction (D1) or a second direction (D2) depending on the pressure of the process gas.

[0100] The shielding plate (750) may be formed with an area that covers at least the interior of the ring member (741). That is, the shielding plate (750) may be formed to have a diameter larger than the inner diameter of the ring member (741).

[0101] The shielding plate (750) may be provided with a step (751) that protrudes further in the circumferential direction on the outer surface. The step (751) may be positioned to prevent the shielding plate (750) from being inserted into the interior of the ring member (741) and to interfere with each hook member (742). The step (751) may be formed with a thin thickness compared to the total thickness of the shielding plate (750).

[0102] Additionally, the shielding plate (750) may have its upper and lower surfaces formed as flat planes, and at least the lower surface may be formed with a curved pattern (752) that is convex toward the second direction (D2). This can be designed to more effectively receive the pressure of the process gas flowing back in the second direction (D2).

[0103] In order for the shielding plate (750) to easily move to contact the ring member (741) when the process gas flows back in the second direction (D2), it is preferable that the shielding plate (750) be made of a lightweight and heat-resistant material.

[0104] Accordingly, the shielding plate (750) can shield the first gas line (710) or the second gas line (720) by maintaining a lowered state such that the step (751) is placed on the hook member (742) as in FIG. 6 when gas is supplied in the first direction (D1), and by maintaining a raised state due to the pressure of the reverse gas in the direction of the ring member (741) as in FIG. 7 when gas flows in reverse in the second direction (D2), which is opposite to the first direction (D1).

[0105] FIGS. 8 and 9 are reference diagrams illustrating shielding plates according to embodiments of the backflow prevention unit shown in FIG. 5.

[0106] Referring to FIGS. 8 and FIGS. 9, the shielding plate (750) according to an embodiment of the present invention can be applied in various shapes.

[0107] First, as shown in FIG. 8(a), the shielding plate (750a) may be formed with a curved pattern in the shape of a plate having a predetermined curvature. In this case, the shielding plate (750a) may be formed with the same curved surface on the upper and lower surfaces, so that it appears convex when viewed from the top and concave when viewed from the bottom. This structure allows the shielding plate (750a) to be applied in a light, thin, and compact shape.

[0108] Additionally, as shown in FIG. 8(b), the shielding plate (750b) may be formed as a conical structure having a triangular cross-section. Alternatively, the shielding plate (750c) may be formed as a truncated cone shape as shown in FIG. 8(c), or the shielding plate (750d) may be applied as a hemispherical shape as shown in FIG. 8(d).

[0109] And, looking at FIG. 9, the shielding plate (750e) can be applied in a non-perforated form without holes as in FIG. 9 (a), can be applied in a structure having a perforation pattern (751) set with holes of the same size on the shielding plate (750f) as in FIG. 9 (b), and can be applied in a structure having a perforation pattern (752) set with holes of different sizes on the shielding plate (750g) as in FIG. 9 (c). Here, when the perforation pattern (751, 752) is applied, purge gas (③, ⑥) can be supplied from the first or second gas line (720) in the first direction (see FIG. 6, D1) respectively.

[0110] Of course, a shielding plate with an appropriate shape or perforation pattern can be selectively applied by considering the pressure of the process gas supplied in the first direction (D1) or the pressure of the process gas flowing back in the second direction (D2).

[0111] Accordingly, according to the substrate processing device of the embodiment of the present invention, the flow of process gas can be maintained smoothly, and at the same time, the opposite gas line can be shielded when backflow or back pressure occurs at a pressure higher than the normal purge gas pressure. Furthermore, the shielding plate is made of a material that is lightweight and has excellent heat resistance, allowing it to easily respond to backflow pressure. Additionally, the shape or perforation pattern of the shielding plate can be selectively applied, thereby providing the effect of being applicable in various forms.

[0112] Although specific embodiments have been illustrated and described above to exemplify the technical concept of the present invention, the present invention is not limited to the configuration and operation identical to the specific embodiments described above, and various modifications may be implemented within the scope of the present invention. Accordingly, such modifications should also be considered to fall within the scope of the present invention, and the scope of the present invention should be determined by the claims set forth below.

Claims

1. A process gas inlet section having a first gas line for supplying a first process gas from a process gas storage section toward a process chamber, a second gas line for supplying a second process gas, and a merging line formed by the merging of the first gas line and the second gas line to connect to the process chamber; and A backflow prevention part installed in the first gas line or the second gas line inside the process gas inlet part to prevent backflow of process gas from the opposite side; A substrate processing device including 2. In Paragraph 1, The above-mentioned backflow prevention unit is, A support member mounted along the inner surface of the first or second gas line, and A substrate processing device comprising a shielding plate installed on the above-mentioned support member to open or shield the first or second gas line.

3. In Paragraph 2, The above support member is, A ring member fixed to the inner surface of the first or second gas line, and A substrate processing device comprising a hook member positioned to protrude downward from the lower side of the ring member and interfere with the shielding plate.

4. In Paragraph 3, A substrate processing device wherein the ring member is formed with a diameter at least equal to or greater than the inner diameter of the first or second gas line.

5. In Paragraph 3, The above shielding plate is, The upper surface is formed to cover at least the interior of the ring member, and A substrate processing device comprising a step formed on the outer surface that is larger than the inner surface diameter of the ring member and interferes with the hook member.

6. In Paragraph 5, The above shielding plate is, When gas is supplied in the first direction in which gas is supplied from the first or second gas line, the step is positioned to be placed on the hook member, and A substrate processing device that shields the first or second gas line while pressurizing the shielding plate in the direction of the ring member when gas is supplied from the first or second gas line in a second direction opposite to the first direction.

7. In Paragraph 6, The above first or second gas line is, A substrate processing device having an inner diameter that is at least equal to or increases with respect to the first direction centered on the ring member.

8. In Paragraph 3, The above shielding plate is, A substrate processing device having one cross-section formed in one of the shapes of a circular flat plate, cone, or hemisphere.

9. In Paragraph 3, The above shielding plate is, A substrate processing device in which a convex curved pattern is formed toward a second direction opposite to the first direction in which gas is supplied from the first or second gas line.

10. In Paragraph 3, The above shielding plate is, A substrate processing device in which, when a purge gas is supplied in a first direction in which gas is supplied from the first or second gas line, a plurality of through-hole patterns are formed along the first direction.

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