Electromagnetic radiation sources for use in semiconductor processing

Abstract

In one or more embodiments, a processing chamber includes a first plate, a second plate, and a plurality of sidewalls partially defining a processing volume. A cover is disposed above the first plate. The cover and the first plate at least partially define an upper heating area. A first energy module is disposed within the upper heating area. The first energy module includes a plurality of heating elements. A plurality of ribs are disposed around the first plate, the second plate, and the sidewalls. A substrate support is disposed in the processing volume. One or more spot heaters are configured to emit a radiation beam toward the substrate support. The one or more spot heaters include a collimator supported by a holder and a stage. The holder is disposed on the stage. The one or more spot heaters further include a support, wherein the stage is disposed on the support.

Description

ELECTROMAGNETIC RADIATION SOURCES FOR USE IN SEMICONDUCTOR PROCESSINGBACKGROUNDField

[0001] Embodiments of the present disclosure relate to apparatus and methods for semiconductor substrate processing, more particularly, to a thermal process chamber with an electromagnetic radiation source for semiconductor substrate processing.Description of the Related Art

[0002] Semiconductor substrates are processed for a wide variety of applications, including the fabrication of integrated circuit devices and microdevices. In one class of processes, a substrate is commonly positioned on a susceptor within a process chamber. The susceptor is supported by a support shaft, which is rotatable about a central axis to rotate the susceptor coupled at one end thereof. Precise control of a heating source, such as a plurality of heating lamps disposed below and above the substrate, allows the substrate to be heated during processing thereof.

[0003] The temperature of the substrate, and the uniformity of the substrate temperature during processing, can affect the thickness uniformity of the material deposited on the substrate. The non-uniform ity of the substrate temperature may be axially symmetric or axially asymmetric. The axially symmetric non-uniform ities of the substrate temperature can be reduced by zoned control of the heating source as the susceptor rotates during processing. The axially asymmetric non-uniform ities of the substrate temperature, e.g., those caused by structural non-uniform ities of the susceptor or support shaft, e.g., lift pins, cannot be compensated by zoned control of the heating source because the sources of the non-uniform ities rotate with the susceptor and the substrate. Other non-uniform ities are possible.

[0004] Despite the precise control of the heat source used to heat the substrate, non-uniformity is observed in the result of deposition processes performed in many existing apparatus. Therefore, a need exists for ways tomanage and reduce temperature non-uniform ities in a thermal semiconductor processing chamber.SUMMARY

[0005] Embodiments of the present disclosure relate to apparatus and methods for semiconductor substrate processing, more particularly, to a thermal process chamber with an electromagnetic radiation source for semiconductor substrate processing.

[0006] In one or more embodiments, a processing chamber includes a first plate, a second plate, and a plurality of sidewalls at least partially defining a processing volume. A cover is disposed above the first plate. The cover and the first plate at least partially define an upper heating area. A first energy module is disposed within the upper heating area. The first energy module includes a plurality of heating elements. A plurality of ribs are disposed around the first plate, the second plate, and the sidewalls. A substrate support is disposed in the processing volume. One or more spot heaters are configured to emit a radiation beam toward the substrate support. The one or more spot heaters include a collimator supported by a holder and a stage. The holder is disposed on the stage. The one or more spot heaters further include a support, wherein the stage is disposed on the support.

[0007] In one or more embodiments, a processing chamber includes a first plate, a second plate, and a plurality of inner sidewalls defining a processing volume. A cover is disposed outwardly of the first plate. The cover and the first plate at least partially define a heating area. A first energy module is disposed in the heating area. The first energy module includes a plurality of heating elements. A substrate support is disposed in the processing volume. A heat source module is configured to emit electromagnetic radiation toward the substrate support. The heat source module includes a plurality of diodes arranged in a pattern of sections spaced from each other.

[0008] In one or more embodiments, a spot heating module includes a collimator supported by a holder. The collimator includes a plurality of optical elements. The plurality of optical elements are configured to be adjusted. Thespot heating module further includes a stage supporting the holder and a support supporting the stage. The support includes one or more channels extending from an upper surface of the support to a lower surface of the support.BRIEF DESCRIPTION OF THE DRAWINGS

[0009] So that the manner in which the above recited features of the present disclosure can be understood in detail, a more particular description of the disclosure, briefly summarized above, may be had by reference to embodiments, some of which are illustrated in the appended drawings. It is to be noted, however, that the appended drawings illustrate only exemplary embodiments and are therefore not to be considered limiting of its scope, and may admit to other equally effective embodiments.

[0010] Figure. 1 is a schematic sectional view of a process chamber, according to one or more embodiments.

[0011] Figure 2 is a schematic side view of the spot heater according to one or more embodiments.

[0012] Figure 3 is a schematic cross sectional side view of a process chamber, according to one or more.

[0013] Figure 4 is an enlarged schematic cross sectional side view of a spot heater disposed on the process chamber shown in Figure 3, according to one or more embodiments.

[0014] Figure 5 is a schematic top view of the substrate, according to one or more embodiments.

[0015] Figure 6A is a schematic top view of the processing chamber shown in Figure 3 having a spot heater with a linear motion architecture, according to one or more embodiments.

[0016] Figure 6B is a schematic top view of the processing chamber having a spot heater with a fixed architecture, according to one or more embodiments.

[0017] Figure 6C is a schematic top view of the processing chamber having a spot heater with a curved motion architecture, according to one or more embodiments.

[0018] Figure 7 is a schematic cross sectional view of the process chamber, according to one or more embodiments.

[0019] Figure 8 schematically illustrates an enlarged view of the high-energy radiant source assembly of Figure 7, according to one or more embodiments.

[0020] Figures 9A and 9B are schematic cross sectional views of the rotatable spot heater disposed on the processing chamber, according to embodiments.

[0021] Figure 10 is a schematic cross sectional view of a processing chamber, according to one or more embodiments.

[0022] Figure 11 is a schematic top view of the processing chamber, according to one or more embodiments.

[0023] Figure 12 is a schematic bottom view of a heat source module, according to one or more embodiments.

[0024] Figure 13 is a schematic cross sectional view of a processing chamber, according to one or more embodiments.

[0025] Figures 14A and 14B are schematic views of the heat source module, according to one or more embodiments.

[0026] Figure 15 is a schematic bottom view of a heat source module, according to one or more embodiments.

[0027] Figure 16 is a schematic bottom view of a heat source module, according to one or more embodiments.

[0028] Figure 17 includes a schematic side cross sectional view of a processing chamber, according to one or more embodiments.

[0029] Figure 18 is a schematic side view of a heat assembly, according to one or more embodiments.

[0030] Figure 19 is a schematic top view of the heat assembly, according to one or more embodiments.

[0031] Figure 20 is a schematic side view of a heat assembly, according to one or more embodiments.

[0032] Figure 21 is a schematic side cross sectional view of a processing chamber, according to one or more embodiments.

[0033] Figure 22 is an enlarged perspective view of the DMD shown in Figure 21 , according to one or more embodiments.

[0034] Figure 23 is a schematic block diagram of a method of processing a substrate, according to one or more embodiments.

[0035] Figure 24 is a schematic side cross sectional view of a processing chamber, according to one or more embodiments.

[0036] To facilitate understanding, identical reference numerals have been used, where possible, to designate identical elements that are common to the figures. It is contemplated that elements and features of one embodiment may be beneficially incorporated in other embodiments without further recitation.DETAILED DESCRIPTION

[0037] Embodiments of the present disclosure relate to apparatus and methods for semiconductor substrate processing, more particularly, to a thermal process chamber with an electromagnetic radiation source for semiconductor substrate processing. The electromagnetic radiation source is part of one or more spot heater modules that emit a spot beam to correct temperature non-uniformities.

[0038] Figure. 1 is a schematic sectional view of a process chamber 100, according to one or more embodiments. The process chamber 100 may be a deposition or a thermal treatment chamber, such as a vapor phase epitaxychamber. A chamber such as the process chamber 100 can be used to perform other thermal processes, as well. The process chamber 100 may be used to process one or more substrates. A substrate 102 is disposed in the process chamber 100 for processing, which may include depositing a material on a device side 150 of the substrate 102, heating of the substrate 102, etching of the substrate 102, pre-cleaning of the substrate 102, or combinations thereof. The process chamber 100 includes a spot heating module 171. The spot heating module 171 includes one or more spot heaters 170. The spot heating module 171 is utilized to heat one or more regions on the substrate 102 during processing. The one or more regions may be cold spots, for example where the lift pins 132 create non-uniform application of heat to the substrate 102. In one or more embodiments, the spot heaters 170 are connected to an electromagnetic radiant source 103 via corresponding optical fibers 101. A single electromagnetic radiant source 103 can be optically coupled to one spot heater 170, or to more than one spot heater 170, by optical fibers 101. Multiple optical fibers 101 can connect one electromagnetic radiant source 103 to multiple spot heaters 170, as shown in Fig. 1. In one or more embodiments, the electromagnetic radiant source 103 is disposed directly on the spot heater 170 instead of coupled to the spot heater 170 by the optical fiber 101. The electromagnetic radiant source 103 may be a pulsing electromagnetic radiant source 103 or a continuous wave (CW) electromagnetic radiant source. In one or more embodiments, the electromagnetic radiant source 103 is directly coupled to the spot heater 170. In one or more embodiments, each spot heater 170 includes an electromagnetic radiant source 103 disposed within the spot heater 170.

[0039] The electromagnetic radiant sources 103 may be high-energy radiant sources, such as lasers. Examples of laser sources that may be used include crystal lasers, laser diodes and arrays, and VCSEL’s. High intensity LED sources may also be used, and collimators may be used to collimate light emitted to form a light beam. Wavelength of the emitted radiation may generally be in the ultraviolet, visible, and / or infrared spectrum, from about 200 nm to about 900 nm, for example 810 nm, and the emitted radiation may be monochromatic, narrow band, broadband, or ultra-broadband such as a whitelaser. The electromagnetic radiant sources 103 emit high intensity electromagnetic radiation. In one or more embodiments, the high intensity electromagnetic radiation is routed by the fibers 101 to the spot heaters 170. The spot heaters 170 orient the high intensity electromagnetic radiation toward a target location in the process chamber 100, such as on the substrate 102 disposed on a substrate support (e.g., the susceptor 106). The spot heaters 170, so oriented, produces a radiant beam from the radiation emitted by the electromagnetic radiant source 103 toward the target location. In one or more embodiments, the end of the optical fiber 101 includes one or more optical features, including lenses, faceted surfaces, diffuse surfaces, filters and other coatings, to direct or condition the electromagnetic radiation exiting the fiber. Alternately, one or more optical elements are disposed within the spot heater 170. The spot heater 170 is thus configurable and swappable. The radiant beams from the electromagnetic radiant sources 103 may have the same wavelength or different wavelengths. In one embodiment, the radiant beams have different wavelengths for heating different materials formed on the substrate 102.

[0040] As shown in Fig. 1 , the spot heater 170 includes a collimator 190 held by a holder 192. The collimator 190 is an optical element that collimates radiation from one of the electromagnetic radiant sources 103, for example by use of appropriately designed one or more lenses. The collimator 190 has a first end, into which radiation from the electromagnetic radiant source 103 is input, for example by directing the output of a laser source into an opening in the first end. The collimator 190 has a second end with an opening where a collimating optical assembly is housed. In some embodiments, a laser or laser source may be directly mounted to the collimator 190 by inserting a beam exit portion of the laser into the first end of the collimator 190 such that the radiation emitted by the laser passes through the collimator 190 and exits through the second end with the collimating optical assembly, which may be a lens or a collection of lenses.

[0041] In one or more embodiments, the collimator 190 is replaced with the fiber 101 or the electromagnetic radiant source 103, and the holder 192 holdsthe fiber 101 or the electromagnetic radiant source 103 directly. The holder 192 is disposed on the stage 194. The stage 194 includes a wedge 196 and a slider 198. The spot heater 170 will be described further below.

[0042] The process chamber 100 includes chamber body 148 that includes a base 180 and a reflector 154 disposed over the base 180. The process chamber 100 further includes a spacer 112 disposed on the base 180, a first plate 108 disposed on the spacer 112, a second plate 110 disposed on the base 180, a susceptor 106 disposed between the first plate 108 and the second plate 110, and one or more energy modules 104a, 104b disposed within the process chamber 100. In Figure 1, a lower energy module 104a is disposed within the base 180. The lower energy module 104a heats the susceptor 106 and / or the substrate 102 disposed on the susceptor 106. In one embodiment, the energy module 104b is an array of radiant heating lamps, as shown in Fig 1. As shown in Fig. 1 the lower energy module 104a may be positioned below the second plate 110 to irradiate the susceptor 106, and the susceptor 106 is between the substrate 102 and the energy module 104b. In one or more embodiments, an energy module 104b is disposed above susceptor 106 such that the susceptor 106 is between two energy modules 104a, 104b. The upper energy module 104b is disposed over the first plate 108 is also positioned to irradiate the substrate 102.

[0043] Each energy module 104a, 104b may be independently controlled in zones, such as radial zones and / or azimuthal zones, in order to control the temperature of various regions of the substrate 102 as a process gas or vapor passes over the surface of the substrate 102, thus facilitating the deposition of a material onto a device side 150 of the substrate 102. Radial zonality allows some control of deposition thickness uniformity by adjusting local temperature at the reaction site to compensate for reactant concentration variation due to flow non-uniform ities and edge-to-center reactant depletion. Zones are separately powered using separate power supplies or by power division control among the zones.

[0044] The substrate 102 is transferred into the process chamber 100 and positioned onto the susceptor 106 through a loading port 109 formed in thespacer 112. The susceptor 106 may be a disk-like substrate support as shown. In one or more embodiments, the susceptor 106 is replaced with a ring-like substrate support, which supports the substrate 102 from the edge of the substrate 102 to expose a backside of the substrate 102 directly to heat from the lower energy module 104a disposed below the second plate 110. Other substrate support(s) are contemplated for use in place of the susceptor 106. The susceptor 106 may be fabricated from silicon carbide, silicon coated with silicon carbide, quartz coated with silicon carbide, or graphite coated with silicon carbide to absorb radiant energy from the energy module 104b and direct the radiant energy to the substrate 102, thus heating the substrate 102.

[0045] Although not shown, portions of the substrate 102 may be elevated above the susceptor 106, for example if the susceptor 106 has contact-reducing features. In such cases, the susceptor heats the substrate 102 by a combination of radiation and conduction. The proportion of radiant heating and conductive heating is determined by the fraction of the substrate area in direct contact with the susceptor surface. Distribution of the two different heating mechanisms can result in thermal non-uniform ities that cannot be corrected by zoned control of the energy modules 104a, 104b.

[0046] The susceptor 106 is supported by a stem 118 that is coupled to a motion assembly 120. The motion assembly 120 includes a rotary actuator 122 that when in operation rotates the stem 118, which rotates the susceptor 106, about the longitudinal axis A of the process chamber 100 perpendicular to an X-Y plane of the process chamber 100. The motion assembly 120 also includes a linear actuator 124 to move the stem 118, which moves the susceptor 106, along the longitudinal axis A of the process chamber 100 in the Z direction (e.g. vertically) of the process chamber 100. The susceptor 106 is rotated about its center during processing using the rotary actuator 122 to minimize the effect of thermal and process gas flow spatial anomalies within the process chamber 100 and thus facilitates uniform processing of the substrate 102. The susceptor 106 rotates at a rate between about 5 RPM and about 100 RPM, such as between about 10 RPM and about 50 RPM, for example about 30 RPM. Other rotation speeds are contemplated.

[0047] The first plate 108 may be a dome, and the second plate 110 may also be a dome. The first plate 108 and the second plate 110 each transmit the radiant energy from the energy modules 104a, 104b. The first plate 108 and the second plate 110, along with the spacer 112 that is disposed between the first plate 108 and second plate 110, define an internal region 111 of the process chamber 100. Each of the first plate 108 and / or the second plate 110 may be flat, convex, or concave. In some embodiments, each of the first plate 108 and / or the second plate 110 is transparent to the radiation of the radiant energy emitted from the energy module 104b (transmitting at least 95% of the radiation of the radiant energy). In one or more embodiments, the first plate 108 and / or the second plate 110 are fabricated from quartz. The present disclosure contemplates that the first plate 108 and / or the second plate 110 can be in the shape of a dome or can be in another shape, such as flat, concave, or another contour.

[0048] In one or more embodiments, the process chamber 100 includes an isolation plate 163 disposed within the internal region 111. The isolation plate 163 includes a first face and a second face opposing the first face. The second face faces the susceptor 106. It is contemplated in one or more embodiments, the isolation plate 163 is at least partially supported by the spacer 112 and / or one or more liners 119 that line at least part of the spacer 112. In one or more embodiments, the isolation plate 163 is formed of a transparent material, such as a transparent quartz. Other materials such as opaque materials (e.g., silicon carbide (SiC), graphite coated with SiC, and / or opaque quartz (such as white quartz, grey quartz, and / or black quartz)) are contemplated for the isolation plate 163. In one or more embodiments, the isolation plate 163 is in the shape of a disc. Other shapes, such as a rectangular plate, are contemplated. In one or more embodiments, the isolation plate 163 at least partially defines the processing volume 136. In one or more embodiments, the isolation plate fluidly isolates the processing volume 136 from the rest of the internal volume 111, such as the volume between the isolation plate 163 and the first plate 108. The isolation plate 163 can include one or more openings (such as holes) that can fluidly connect the processing volume 136 to the volume between the isolation plate 163 and the first plate 108. The present disclosure contemplates that theisolation plate 163 can be omitted such that the processing volume 136 is defined between the first plate 108 and the substrate 102.

[0049] The energy module 104b provides a total radiant power output of between about 10KW and about 60KW, which can heat a semiconductor substrate to a temperature within a range of about 200 degrees Celsius to about 1,600 degrees Celsius. Each lamp 105 of the energy module 104b can be coupled to a power distribution board, such as printed circuit board (PCB) 159, through which power is supplied to each lamp 105. The PCB 159 can have power division control circuitry if one power supply supplies power to more than one heating zone. In one embodiment, the energy module 104b is positioned within a housing 145. The housing 145 has one or more channels 149 to flow a cooling fluid between the lamps 105.

[0050] In Figure 1, the susceptor 106 is shown in an elevated processing position. The susceptor 106, while located in the processing position, divides the internal region 111 of the process chamber 100 into a process gas region 136 above the susceptor 106, and a purge gas region 138 below the susceptor 106. To load and unload substrates 102, the susceptor 106 is moved to a transfer position to allow lift pins 132 to contact standoffs 134 disposed on an interior surface 113 of the second plate 110. The standoffs 134 are made of the same material as the second plate 110. The lift pins 132 are suspended in holes 107 formed through the susceptor 106. The respective holes 107 extend from a substrate supporting surface 115 of the susceptor 106 to a back surface 117 of the susceptor 106 opposite the substrate supporting surface 115. Substrate temperature is determined using one or more thermal sensors 153 configured to sense thermal radiation emitted by the back surface 117 of the susceptor 106. The sensors 153 may be pyrometers disposed in ports formed in the housing 145. Other sensors, such as thermocouples, can be used in place of the sensors 153 or in addition to the sensors 153. Additionally or alternatively, one or more thermal sensors 153 directly sense thermal radiation emitted by the device side 150 of the substrate 102. The sensors 153, or one or more controllers coupled to the sensors 153 to receive signals representing the sensed radiation, determine temperature from the sensed radiation. Thereflector 154 is placed outside the first plate 108 to reflect radiation that is radiating off the substrate 102 and redirect the radiation back onto the substrate 102. In one or more embodiments, the upper energy module 104b is coupled to the reflector 154. A clamp ring 156 disposed on the spacer 112 and the first plate 108 secures the reflector 154 over the first plate 108. The reflector 154 can be made of a metal such as aluminum or stainless steel. The sensors 153 can be disposed through the reflector 154 to receive radiation from the device side 150 of the substrate 102.

[0051] Process gas supplied from a process gas supply source 151 is introduced into the process gas region 136 through the process gas inlet 114 formed in the spacer 112. The spacer 112 has an outer surface 182 and an inner surface 184. The process gas inlet 114 directs the process gas across the device side 150 of the substrate 102. The processing position of the susceptor 106 and the substrate 102 thereon, are adjacent to the process gas inlet 114, thus allowing the process gas to flow generally along flow path 173 across the device side 150 of the substrate 102. The process gas exits the process gas region 136 (along flow path 175) through the gas outlet 116 located in the spacer 112 opposite from the process gas inlet 114. The gas outlet 116 is an opening formed in the spacer 112 fluidly coupling a vacuum pump 157 to the process gas region 136. Removal of the process gas through the gas outlet 116 is facilitated by the vacuum pump 157 coupled thereto.

[0052] Purge gas supplied from a purge gas source 162 is introduced to the purge gas region 138 through a purge gas inlet 164 formed in the spacer 112. During a film formation process, the susceptor 106 is located at a position such that the purge gas flows generally along flow path 165 across the back surface 117 of the susceptor 106. The purge gas exits the purge gas region 138 (along flow path 166) and is exhausted out of the process chamber 100 through the gas outlet 116.

[0053] The above-described process chamber 100 can be controlled by a processor based system controller, such as a controller 147 shown in Fig.1. For example, the controller 147 is configured to control flow of various precursor and process gases and purge gases from gas sources, duringdifferent operations of a substrate processing sequence. The controller 147 can be configured to control activation of the spot heating module 171, predict an algorithm for activating the spot heating module 171, and / or synchronize the operation of the spot heating module 171 with substrate rotation, feeding of gases, lamp operation, or other process parameters, among other controller operations. The controller 147 includes a programmable central processing unit (CPU) 152 that is operable with a memory 155 and a mass storage device, an input control unit, and a display unit (not shown), such as clocks, cache, input / output (I / O) circuits, and the like, coupled to the various components of the process chamber 100 to facilitate control of substrate processing in the process chamber 100. The controller 147 further includes support circuits 158. To facilitate control of the process chamber 100 described above, the CPU 152 may be one of any form of general purpose computer processor that can be used in an industrial setting, such as a programmable logic controller (PLC), for controlling various chambers and sub-processors. The memory 155 is in the form of computer-readable storage media that contains instructions, that when executed by the CPU 152, facilitates the operation of the process chamber 100. The instructions in the memory 155 are in the form of a program product such as a program that implements the method of the present disclosure.

[0054] Figure 2 is a schematic side view of the spot heater 170 according to one or more embodiments. The spot heater 170 includes the collimator 190 held by the holder 192. The collimator 190 may be a tubular member containing optical elements such as lenses, and the holder 192 may be a cylindrical object with a central opening to receive and secure the tubular collimator 190 in a desired location. The holder 192 is disposed on the stage 194, and the stage 194 is disposed on a support 202. The stage 194 includes the wedge 196 and the slider 198. The slider 198 is linearly movable on the support 202 using set screws or an actuator. The slider 198 can include an actuator that can move the slider 198 during processing. The wedge 196 includes a surface 204 that is in contact with the holder 192, and the surface 204 forms an angle A with respect to a plane 206 that is substantially parallel to a major surface of the susceptor, such as the susceptor 106 of the process chamber 100 shown in Fig. 1. In one or more embodiments, the wedge 196 is omitted.

[0055] In one or more embodiments, the one or more optical elements within the collimator 190 can be adjusted in order to focus and / or de-focus the beam. By focusing and / or defocusing the beam within the collimator, the diameter of the beam emitted onto the substrate 102 can be adjusted. In one or more embodiments, the diameter of the beam on the substrate is between about 0.5 mm to about 0.7 mm. In one or more embodiments, the controller 147 determines the diameter of the beam by adjusting the position of the one or more optical elements within the collimator 190

[0056] The angle A of the wedge 196 can be adjusted by an actuator located in the wedge 196. Targeting of the spot heater 170 can be accomplished by selecting the angle A of the wedge 196 and by adjusting the location of the slider 198. Because the angle A of the wedge 196 and the location of the slider 198 can be adjusted by actuators, the location of the beam spot on the substrate, such as the substrate 102 shown in Fig. 1, can be adjusted during processing. In one or more embodiments, the wedge 196 is flat so that the angle A is about 0 degrees, and the surface 204 is parallel to an upper surface of the support 202. The wedge 196, the slider 198, and the support 202 may be fabricated from a material that is transparent to the radiation of the radiant energy emitted from the electromagnetic radiant source 103 (transmitting at least 95% of the radiation of the radiant energy). In one embodiment, the wedge 196, the slider 198, and the support 202 are fabricated from quartz. In some embodiments, an opening is formed through the wedge 196, the slider 198, and the support 202 for a beam, such as a laser beam, from the collimator 190 to pass through the wedge 196, the slider 198, and the support 202 to a target area on the substrate 102. The opening may be large enough to accommodate the movement of the surface 204 of the wedge 196 or the slider 198. The opening formed in the support 202 may be at least larger than openings formed in the wedge 196 and the slider 198, so the openings formed in the wedge 196 and the slider 198 are not occluded by any portion of the support 202. In one embodiment, the opening formed in the support 202 is larger than the opening in the slider 198, regardless of the position of the slider 198. In cases where the wedge 196 has an opening, the opening will be aligned with an optical axis of the radiation source ( / .e. the optical fiber 101 and / or theelectromagnetic radiant source 103) delivering radiation inside the collimator 190, and will be sized to admit all, or a desired portion, of the radiation through the opening.

[0057] The spot heater 170 can be aimed by performing a manual alignment process. During the alignment process, any components between the support 202 and the susceptor 106 may be removed to facilitate manual alignment of the spot heater 170. The spot heater 170 is energized to produce a guide beam, so an operator can view a spot of light from the guide beam landing on the susceptor. The susceptor may be rotated so the region to be heated by the spot heater 170 is readily lighted by the guide beam. The positioning devices, such as the slider 198 and the wedge 196 of the stage 194, can then be operated to align the spot heater 170 to a region to be heated. In one embodiment, the regions to be heated are where the lift pins, such as the lift pins 132 of the process chamber 100 shown in Fig. 1, are located. The guide beam may be produced by a lower intensity laser directly coupled, or fiber-coupled, to the spot heater 170. The present disclosure contemplates that the alignment process and / or the aiming may be conducted automatically using the controller 147.

[0058] In one or more embodiments, a movement device 208 is coupled to the collimator 190 to facilitate movement of the collimator 190. The movement device 208 is disposed between the holder 192 and the collimator 190. One or more bearings may be disposed between the movement device 208 and the holder 192 to minimize friction between the movement device 208 and the holder 192. In one embodiment, the movement device 208 is a device that can rotate the collimator 190 with respect to the longitudinal axis 210 of the collimator 190. The collimator 190 may be at a first position during the processing of the substrate using a first process recipe, and the collimator 190 may be rotated to a second position before processing the substrate using a second process recipe. Rotating of the collimator 190 may change the shape and / or size of the beam spot of a radiant beam exiting the collimator 190.

[0059] In one or more embodiments, the movement device 208 continuously rotates the collimator 190 in one direction, clockwise or counterclockwise, withrespect to the longitudinal axis 210 of the collimator 190 during processing to dynamically change the shape of the beam spot on the substrate. The substrate may also be rotated during processing. The rotation of the collimator 190 may be synchronized with the rotation of the substrate in order to provide precise heating of one or more cold spots on the substrate. In another embodiment, the movement device 208 causes the collimator 190 to rotationally oscillate within a predetermined angular range, such as between negative 60 degrees to 60 degrees. The oscillation of the collimator 190 may be synchronized with the rotation of the substrate. In some embodiments, the collimator 190 is replaced with the fiber 101 or the electromagnetic radiant source 103 (Fig. 1). The movement device 208 is coupled to the fiber 101 or the electromagnetic radiant source 103 (Fig. 1) that is held by the holder 192, and the movement device 208 rotates the fiber 101 or the electromagnetic radiant source 103 the same way as the collimator 190.

[0060] The movement device 208 can be a controlled motion device that produces a periodic motion, such as vibration, circular motion, or linear motion. The motion produced by the movement device 208 is transferred to the collimator 190, or alternately, the fiber 101 or the electromagnetic radiation source 103 (Fig. 1). The collimator 190 may move the beam spot as the motion transferred from the movement device 208 moves the collimator 190, and the movement of the beam spot irradiates an exposure area that is larger than an area of the beam spot. In another embodiment, the collimator 190 irradiates overlapping regions on the substrate, approximating irradiation by a large beam spot larger than the beam spot produced by the electromagnetic radiant source 103 (Fig. 1). When the collimator 190 moves, the electromagnetic radiant source produces a continuous electromagnetic radiant beam that irradiates an exposure area on the substrate larger than an area of the beam spot as the electromagnetic radiant beam passes through the moving collimator 190. The large beam spot defines an annular heating zone as the substrate rotates.

[0061] The electromagnetic radiant source 103 may be pulsed through the moving collimator 190 to form a large beam spot on the substrate as the electromagnetic radiant beam passes through the moving collimator 190. Thelarge beam spot heats discrete areas on the substrate as the substrate rotates. The pulsing of the electromagnetic radiant beam may be synchronized with the rotation of the substrate and / or with movement of the beam spot. For example, pulsing of the beam may be set to a frequency related to a frequency of vibration of the collimator 190. The related frequencies may deliver radiation pulses to overlapping areas of the substrate such that an exposure area of the substrate, larger than an area of any of the pulses, is exposed to pulsed radiation. Duration of the pulsing through the moving collimator 190 determines an angular sweep of the exposure along an annular, or partially annular, heating zone.

[0062] The collimator 190 may move continuously or periodically, such as when a pulse of the electromagnetic radiant beam passes through the collimator 190. In one or more embodiments, the beam is pulsed for a first duration while the collimator 190 moves, and a second duration while the collimator 190 is stationary. In such an embodiment, a first exposure area of the substrate corresponding to the first duration is larger than an area of the beam, while a second exposure area corresponding to the second duration has a dimension that is the same as a dimension of the beam.

[0063] In one or more embodiments, the spot heater 170 is configured to emit multiple electromagnetic radiation beams at different wavelengths. For example, the spot heater 170 can emit a first beam having a first peak wavelength and / or a first photon energy, a second beam having a second peak wavelength and / or a second photon energy, and a third beam having a third wavelength and / or a third photon energy. The multiple beams can be emitted simultaneously and / or sequentially. As an example, the first peak wavelength and / or the first photon energy can be used for a first process (e.g., a first deposition process using a first recipe), the second peak wavelength and / or the second photon energy can be used for a second process (e.g., an etching process using a second recipe), the third peak wavelength and / or the third photon energy can be used for a third process.

[0064] Figure 3 is a schematic cross sectional side view of a process chamber 300, according to one or more embodiments. The process chamber300 is similar in some respects to the process chamber 100 shown in Fig. 1. The process chamber 300 may generally have the shape of a rectangular box. The process chamber 300 includes a first plate 302, a second plate 304. In one or more, the first plate 302 and the second plate 304 are connected by a plurality of inner sidewalls to form an inner rectangular box defining a processing volume 303. The first plate 302 and the second plate 304 may be fabricated from the same material as the first plate 108 and the second plate 110 shown in Fig. 1. In the implementation of Fig. 3, the first and second plates 302 and 304 are flat, and made of quartz transparent to the wavelength of energy to be passed therethrough to heat a substrate. In one or more embodiments, the process chamber 300 includes an isolation plate disposed within the processing volume 303.

[0065] A first energy module 310 is disposed above the first plate 302. The first energy module 310 may include a plurality of radiant heat sources, for example linear heat sources, such as elongated tube-type radiant heating elements. In one or more embodiments, the first energy module 310 includes a plurality of spaced-apart linear lamps. The first energy module 310 is disposed in an upper heating area 390. The upper heating area 390 is at least partially defined by the first plate 302 and a cover 306 disposed above the first energy module 310. The first energy module 310 is disposed in spaced-apart parallel relationship and also extend substantially perpendicular to a reactant gas flow path (shown by arrow 312) through the process chamber 300. A second energy module 315 is positioned below the second plate 304, and oriented transverse to the first energy module 310. The second energy module 315 is disposed in a lower heating area 392. The lower heating area 392 is at least partially defined by the second plate 304 and chamber bottom 308 located below the second energy module 315. The second energy module 315 may include a plurality of radiant heat sources, for example linear heat sources, such as elongated tubetype radiant heating elements. In one or more embodiments, the second energy module 315 includes a plurality of spaced-apart second linear lamps. In one or more embodiments, the second linear lamps of the second energy module 315 are oriented parallel to a direction of process gas flow in the processingvolume 303, and the linear lamps of the first energy module 310 are oriented perpendicularly to the direction of process gas flow.

[0066] A plurality of spot heat sources 320 supply concentrated heat to the underside of the substrate support structure (described below), to counteract a heat sink effect created by cold support structures extending through the bottom of the process chamber 300.

[0067] In one or more embodiments, the cover 306 and chamber bottom 308 at least partially define an outer rectangular box. The inner rectangular box is disposed within the outer rectangular box. The inner rectangular box and the outer rectangular box at least partially define the upper heating area 390 and the lower heating area 392. A plurality of ribs 395 are disposed within the upper heating area 390 and the lower heating area 392. In one or more embodiments, the ribs 395 wrap around the first plate 302, the second plate 304, and the inner sidewalls of the inner rectangular box. The ribs 395 provide structural support for the inner rectangular box. In one or more embodiments, the ribs 395 are formed of the same material as the first plate 302 and the second plate 304. In one or more embodiments, the ribs 395 are formed of a quartz transparent to the wavelength of energy to be passed therethrough to heat a substrate.

[0068] A spot heating module 471 is disposed on the cover 306 located over the first energy module 310. The spot heating module 471 includes one or more spot heaters 470. The spot heating module 471 produces one or more electromagnetic radiant beams to perform localized heating of a substrate disposed in the process chamber 300. The power of the various heat sources 470, 310, 315, 320 can be controlled independently or in grouped zones in response to the substrate temperature measured through temperature sensors.

[0069] A substrate 325 is shown supported by a substrate support 330 disposed in the processing volume 303. The substrate support 330 includes a substrate holder 332, upon which the substrate 325 rests, and a support spider 334. The spider 334 is mounted to a shaft 336, which extends downwardly through a tube 338 extending through a chamber bottom 308. The tube 338communicates with a source of purge gas which can flow therethrough during processing of the substrate 325.

[0070] A plurality of temperature sensors is positioned in proximity to the substrate 325. The temperature sensors may take a variety of forms, such as optical pyrometers or thermocouples. In the illustrated embodiment, the temperature sensors comprise thermocouples, including a first or central thermocouple 340, suspended below the substrate holder 332 in any suitable fashion. The central thermocouple 340 passes through the spider 334 in proximity to the substrate holder 332. The process chamber 300 further includes a plurality of secondary or peripheral thermocouples, also in proximity to the substrate 325, including a leading edge or front thermocouple 345, a trailing edge or rear thermocouple 350, and a side thermocouple. Each of the peripheral thermocouples is housed within a slip ring 396, which surrounds the substrate holder 332 and the substrate 325. The slip ring 396 rests upon support members 354, which extend from a front chamber divider 356 and a rear chamber divider 397. The dividers 356, 397 are fabricated from quartz. Each of the central and peripheral thermocouples are connected to a temperature controller, which sets the power of the various heat sources 310, 315, 320 in response to the temperature readings from the thermocouples.

[0071] The process chamber 300 further includes an inlet port 360 for the injection of reactant and carrier gases, and the substrate 325 can also be received therethrough. An outlet port 364 is on the opposite side of the process chamber 300, with the substrate support structure 330 positioned between the inlet port 360 and outlet port 364. An inlet component 365 is fitted to the process chamber 300, adapted to surround the inlet port 360, and includes a horizontally elongated slot 367 through which the substrate 325 can be inserted. A generally vertical inlet 368 receives gases from gas sources and communicates such gases with the slot 367 and the inlet port 360. An outlet component 370 similarly mounts to the process chamber 300 such that an exhaust opening 372 aligns with the outlet port 364 and leads to exhaust conduits 374. The exhaust conduits 374, in turn, can communicate withsuitable vacuum means (not shown) for exhausting process gases from the process chamber 300.

[0072] The process chamber 300 also includes a species source 376 of excited species, positioned below the chamber bottom 308. The excited species source 376 may be a remote plasma generator disposed along a gas line 378. A source of precursor gases 380 is coupled to the gas line 378 for introduction into the excited species source 376. A source of carrier gas 382 is also coupled to the gas line 378. One or more branch lines 384 can also be provided for additional reactants. The excited species source 376 can be employed for plasma enhanced deposition, but also may be utilized for exciting etchant gas species for cleaning the process chamber 300 of excess deposition material when no substrate is in the process chamber 300. The present disclosure contemplates that the species source 376 and the associated lines 378, 384 and sources 380, 382 can be omitted from the process chamber 300.

[0073] The above-described process chamber 300 can be controlled by a processor based system controller, such as controller 347, shown in Fig. 3. For example, the controller 347 is configured to control flow of various precursor and process gases and purge gases from gas sources, during different operations of a substrate processing sequence. The controller 347 can be configured to control activation of the spot heating module 471, predict an algorithm for activating the spot heating module 471, and / or synchronize the operation of the spot heating module 471 with substrate rotation, feeding of gases, lamp operation, or other process parameters, among other controller operations. The controller 347 includes a programmable central processing unit (CPU) 352 that is operable with a memory 355 and a mass storage device, an input control unit, and a display unit (not shown), such as clocks, cache, input / output (I / O) circuits, and the like, coupled to the various components of the process chamber 300 to facilitate control of substrate processing in the process chamber 300. The controller 347 further includes support circuits 358. To facilitate control of the process chamber 300 described above, the CPU 352 may be one of any form of general purpose computer processor that can be used in an industrial setting, such as a programmable logic controller (PLC), forcontrolling various chambers and sub-processors. The memory 355 is in the form of computer-readable storage media that contains instructions, that when executed by the CPU 352, facilitates the operation of the process chamber 300. The instructions in the memory 355 are in the form of a program product such as a program that implements the method of the present disclosure.

[0074] Figure 4 is an enlarged schematic cross sectional side view of a spot heater 470 disposed on the process chamber 300 shown in Figure 3, according to one or more embodiments. The spot heater 470 includes a collimator 490 supported by the holder 492. The collimator 490 may be a tubular member containing optical elements such as one or more lenses, and the holder 492 may be a cylindrical object with a central opening to receive and secure the tubular collimator 490 in a desired location. The holder 492 is disposed on the stage 494, and the stage 494 is disposed on a support 402 (e.g., a base). In one or more embodiments, the stage 494 is linearly movable on the support 402 using set screws and / or an actuator. The stage 494 can include an actuator that can move the stage 494 during processing. In one or more embodiments, the stage 494 and support 402 are fixed. The support 402 is coupled to the cover 306. An opening 420 is formed in the cover 306. The opening 420 has a longitudinal axis 410. The opening 420, the collimator 490, the holder 492, the stage 494, and the support 402 are all axially aligned with the longitudinal axis 410. A passage 430 is defined by the center of the collimator 490, the holder 492, the stage 494, the support 402, and the opening 420.

[0075] In one or more embodiments, the one or more optical elements within the collimator 490 can be adjusted in order to focus and / or de-focus the beam. By focusing and / or defocusing the beam within the collimator 490, the diameter of the beam emitted onto the substrate 325 can be adjusted. As an example, the one or more optical elements (e.g., lenses) can be linearly moved, tilted, and / or rotated to focus and / or de-focus light. In one or more embodiments, the diameter of the beam on the substrate is between about 0.5 mm to about 0.7 mm. In one or more embodiments, the controller 347 determines the diameter of the beam by adjusting the position of the one or more optical elements within the collimator 490.

[0076] During a heating operation, an electromagnetic radiation beam is emitted from the collimator 490 through the passage 430, and onto the substrate 325. The spot heater 470 is positioned on the cover 306 so that the beam is configured to be emitted onto the substrate 325 during the heating operation. In one or more embodiments, the spot heater 470 is disposed over the substrate 325 on the cover 306 in between the ribs 395 and the plurality of radiant heat sources of the first energy module 310. During the heating operation, the beam is emitted from the collimator 490 onto the substrate 325, the beam travels through the passage 430 into the heating area. The beam travels through the heating area between the plurality of radiant heat sources of the first energy module 310 and the ribs 395, and onto the substrate 325. In one or more embodiments, the beam does not contact the plurality of radiant heat sources of the first energy module 310, the ribs 395, or a combination thereof.

[0077] In one or more embodiments, the spot heater 470 is disposed over the substrate 325 and the ribs 395 on the cover 306. In one or more embodiments, the cover 306 is a reflector and includes a reflective material, such as one or more of gold, silver, aluminum (e.g., polished aluminum), and / or stainless steel (e.g., polished stainless steel). During the heating operation, the beam is emitted from the collimator 490 onto the substrate 325, the beam travels through the passage 430 into the heating area. The beam travels through the heating area through the one of the ribs 395, and onto the substrate 325. In one or more embodiments, the beam travels through a top surface of the rib 395 to a bottom surface of the rib 395. In one or more embodiments, the rib 395 includes an opening through which the beam can travel. The opening extends from the top surface of the rib 395 to the bottom surface of the rib 395. In one or more embodiments, a rib 395 includes a transparent structure. In one or more embodiments, the transparent structure extends from the top surface of the rib 395 to the bottom surface of the rib 395. The transparent structure is configured to allow the beam to be emitted through the rib 395 without being absorbed by the rib structure.

[0078] The cover 306 includes a plurality of cooling channels 406. The cooling channels 406 are configured to cool the plurality of radiant heat sources of the first energy module 310. In one or more embodiments, the cooling channels 406 are exposed to the atmosphere allow the heat produced by the plurality of radiant heat sources of the first energy module 310 to be vented out through the cooling channels 406. In one or more embodiments, the cooling channels 406 are fluidly coupled to a cooling system, such as a gas cooling system. In one or more embodiments, the gas cooling system is configured to inject a cooling gas into the cooling channels 406 in order to cool the plurality of radiant heat sources of the first energy module 310. In one or more embodiments the support 402 includes one or more support channels 407. The one or more support channels 407 are fluidly connected to one or more respective cooling channels 406. In one or more embodiments, the one or more support channels 407 extend from an upper surface of the support 402 to a lower surface of the support 402. In one In one or more embodiments, the support channels 407 are exposed to the atmosphere allow the heat produced by the plurality of radiant heat sources of the first energy module 310 to be vented out through the support channels 407. In one or more embodiments, the support channels 407 are fluidly coupled to a cooling system, such as a gas cooling system. In one or more embodiments, the gas cooling system is configured to inject a cooling gas into support channels 407 in order to cool the plurality of radiant heat sources of the first energy module 310.

[0079] In one or more embodiments, the spot heater 470 is configured to emit multiple electromagnetic radiation beams at different peak wavelengths. For example, the spot heater 470 can emit a first beam having a first peak wavelength and / or a first photon energy, a second beam having a second peak wavelength and / or a second photon energy, and a third beam having a third wavelength and / or a third photon energy. The multiple beams can be emitted simultaneously and / or sequentially. As an example, the first peak wavelength and / or the first photon energy can be used for a first process (e.g., a first deposition process using a first recipe), the second peak wavelength and / or the second photon energy can be used for a second process (e.g., an etchingprocess using a second recipe), the third peak wavelength and / or the third photon energy can be used for a third process.

[0080] It is contemplated that the spot heater 470 can emit a continuous wavelength (CW) laser to anneal the substrate. For example, during an annealing operation, the spot heater 470 can be configured to emit a continuous wavelength beam onto the substrate 325 in order to crystalize an amorphous silicon film deposited on the substrate 325. In one or more embodiments, the spot heater 470 is configured to emit a continuous wavelength beam onto the substrate 325 during a cleaning operation. For example, during an in-situ cleaning operation the spot heater 470 can be configured to emit a continuous beam onto the substrate 325 in order to remove one or more oxide layers and / or to post etch residuals disposed on the substrate 325.

[0081] Figure 5 is a schematic top view of the substrate 325, according to one or more embodiments. In one or more embodiments, the substrate 325 is disposed within the processing chamber 300. During a heating operation, the substrate 325 is rotated. The electromagnetic radiation beam is emitted by the one or more spot heaters 470. The beam is emitted onto a beam area 501 on the substrate 325. The beam area 501 is located a distance R from the center of the substrate 325. In one or more embodiments, the size of the beam area can be adjusted by adjusting the position of the one or more optical elements within the collimator 490. The beam can be emitted continuously or pulsed during the heating operation. In one or more embodiments the beam is emitted continuously. When the beam is emitted continuously, a region 502 of the substrate is heated. In one or more embodiments the region 502 is a ring shaped region. As the substrate 325 is rotated, the beam is emitted on every point along region 502. In one or more embodiments (and shown in ghost in Figure 5), the beam area 501 (e.g., the beam spot) is aimed and sized to partially overlap an edge region of the substrate and a region of the substrate support that is disposed radially outwardly of the substrate.

[0082] In one or more embodiments, the beam is pulsed. When the beam is pulsed the pulsing of the beam can be adjusted. In one or more embodiments, the controller 347 determines when the beam is pulsed. Inone or more embodiments, the controller 347 pulses the beam for a pulse duration. The controller 347 also determines the period in between each pulse. The beam can pulsed at a frequency of about 30 Hz to about 5 kHz. The beam can have a duty cycle from about 5% to about 85%. In one or more embodiments, beam is pulsed on one or more pulse areas 510 of the substrate 325. During a heating operation as the substrate 325 is rotated, the one or more pulse areas 510 travel through the beam area 501. When the pulse area 510 and the beam area 501 coincide, the beam is pulsed for a pulse duration. This process is repeated as the substrate is rotated and a pulse area 510 and the beam area 501 coincide. In one or more embodiments, the substrate 325 is rotated by a step motor. The step motor determines the angular position of the substrate and sends a signal to the controller 347 whenever a pulse area 510 and the beam area 501 coincide. When a pulse area 510 and the beam area 501 coincide the controller 347 sends a signal to the spot heater 470 to pulse the beam for a predetermined pulse period. In one or more embodiments, one or more sensors, such as one or more cameras, are positioned within the processing chamber 300. The one or more sensors are configured to determine the angular position of the substrate 325. The one or more sensors determine the angular position of the substrate and sends a signal to the controller 347 whenever a pulse area 510 and the beam area 501 coincide. When a pulse area 510 and the beam area 501 coincide the controller 347 sends a signal to the spot heater 470 to pulse the beam for a predetermined pulse period. In one or more embodiments, the pulse areas 510 are axially aligned with one or more lift pins of the substrate holder 332. The lift pins act as a heat sink and absorb heat from the substrate. Therefore, the spot heater 470 can be configured to pulse the beam on the pulse areas 510 on the substrate 325 axially aligned with the lift pins in order to help promote a uniform temperature profile across the substrate 325.

[0083] It is contemplated that the spot heater 470 can emit a pulsed beam in order to anneal the substrate. For example, during an amorphous silicon deposition operation, the spot heater 470 can be configured to emit a pulsed beam onto the substrate 325 in order to crystalize an amorphous silicon film disposed on the substrate 325. In one or more embodiments, the spot heater470 is configured to emit a pulsed beam onto the substrate 325 in order to modify a grain size of a crystal structure deposited over the substrate 325. The pulsed beam can modify the grains and crystal structures with reduced or eliminated impact on the bulk of the substrate 325. The pulsed beam can be used to manage stress and / or strain within the lattice of the crystal structure of device structures deposited over the substrate 325. In one or more embodiments, the beam is pulsed during an etching operation (such as postdeposition etching) in order to enhance surface reactions on the surface of the substrate 325. In one or more embodiments, the beam is pulsed during a deposition operation in order to enhance a sticking coefficient on the surface of the substrate 325. The pulsed laser can be used in combination with pulsed etchant flow and / or pulsed deposition precursor flow (which could be synchronized) to momentarily enhance surface reactions and / or sticking coefficients of etchant species and / or deposition species.

[0084] A flag 760 can be on the substrate support 330 to indicate the location of a lift pin. The flag 760 may have a width of between about 0.1 degree and about 1.0 degree. The flag 760 may be machined and / or may be mounted to or coupled to the substrate support 330. In certain embodiments, a delay in the flag signal may be introduced to ease the mounting or coupling tolerance. The delay may be adjusted in order to improve accuracy of the spot heater 470, thus improving accuracy of the beam with respect to the locations of the lift pins.

[0085] In one or more embodiments, the flag 760 is a homing flag and / or an optical sensor. The flag 760 may trigger an optical switch associated with a home location on the substrate 325. In one or more embodiments, the flag 760 is machined into or coupled to the rotation assembly, such as the substrate support 330.

[0086] A rotation encoder may be utilized to sync the spot heater 470. The encoder may be a range based encoder. The encoder may be controlled to the controller 347. The encoder may have about a 0.03 degree resolution or better in order to achieve less than 1 mm accuracy, and may be pulled at less than 2.5ms, for example. In one or more embodiments, the encoder is pulled at a rate of 1ms.

[0087] An imaging process may be used to detect features on the substrate support 330 and predict when to fire the spot heater. The imaging process may be completed with less than a 2.5ms turnaround time. As such, an algorithm may be determined and controlled by the controller 347 to predict and / or determine when to fire the spot heater 470.

[0088] Figure 6A is a schematic top view of the processing chamber 300 shown in Figure 3 having a spot heater 470 with a linear motion architecture 602, according to one or more embodiments. The spot heater 470 having a linear motion architecture 602 includes the stage 494 and support 402. The stage 494 is linearly movable on a linear motion path 610 the support 402 using a motion device 607. The motion device 607 can include, for example, one or more set screws and / or one or more actuators. The motion device 607 can be powered using motor(s) and / or manually by a user. In one or more embodiments, the linear motion path 610 is aligned with the opening 420 on the cover 306. In one or more embodiments, the linear motion path 610 is a channel formed in the support 402. The stage 494 can slide along the linear motion path 610, and the stage 494 can include one or more sections that extend into the linear motion path 610. For example, the stage 494 can fit into the support 402 in a dovetail arrangement. The stage 494 moves along the linear motion path 610 in order emit the beam on different areas on the substrate 325. The stage 494 can move during heating and / or in intervals between heating. In one or more embodiments, the stage 494 moves back and forth along the linear motion path 610. In one or more embodiments, the stage 494 is moved to a desired position along the linear motion path 610. In one or more embodiments, the controller 347 determines the position of the stage 494 on the linear motion path 610.

[0089] Figure 6B is a schematic top view of the processing chamber 300 having a spot heater 470 with a fixed architecture 604, according to one or more embodiments. The spot heater 470 having a fixed architecture 604 includes the stage 494 and support 402. The stage 494 is coupled to the support 402 in afixed position. The stage 494 can be releasably coupled to the support 402. In one or more embodiments, the collimator 490 is axially aligned with the opening 420 in the cover 306. Although the opening 420 is depicted as a slot, it should be understood that this has been done for exemplary purposes and that the opening could have any shape, such as a hole concentric with the collimator 490.

[0090] Figure 6C is a schematic top view of the processing chamber 300 having a spot heater 470 with a curved motion architecture 606, according to one or more embodiments. The curved motion architecture 606 can be arcuate and / or elliptical. The spot heater 470 having a curved motion architecture 606 includes the stage 494 and support 402. The stage 494 is movable on a curved motion path 620 on the support 402 using set screws and / or an actuator. In one or more embodiments, the curved motion path 620 is a channel formed in the support 402. In one or more embodiments, the curved motion architecture 606 is aligned with the opening 420 on the cover 306. In one or more embodiments, the opening 420 has the same shape as the curved motion path 620 so that the beam can be emitted onto the substrate 325 as the stage 494 moves along the curved motion path 620. During a heating process, the stage 494 moves along the curved motion path 620 in order emit the beam on different areas on the substrate 325. In one or more embodiments, the stage 494 moves back and forth (e.g., in both directions) along the curved motion path 620. In one or more embodiments, the stage 494 is moved to a desired position along the curved motion path 620. In one or more embodiments, the controller 347 determines the position of the stage 494 on the curved motion path 620.

[0091] In one or more embodiments, the curved motion path 620 passes over one or more ribs 395, such as to span multiple ribs 395. In one or more embodiments, during a heating operation, the beam is pulsed as the spot heater 470 moves along the curved motion path 620. The pulsing of the beam is controlled so that the beam is emitted when the spot heater 470 is positioned between the ribs 395 and / or heat sources of the first energy module 310, so that the beam passes with reduced or eliminated interference by the ribs 395 and / or heat source(s) from the first energy module 310. The beam can beturned off when the spot heater 470 passes over a rib 395 and / or a heat source from the first energy module 310. In one or more embodiments, the controller 347 operates the pulsing of the beam. In one or more embodiments, during a heating operation, as the spot heater 470 moves along the curved motion path 620, the beam travels through the ribs 395 while the spot heater 470 passes over the ribs 395. In one or more embodiments, the ribs 395 include one or more openings. The one or more openings of the ribs 395 extend through the ribs 395. In one or more embodiments the one or more openings of the ribs 395 are aligned with the curved motion path 620. During the heating operation, as the spot heater 470 moves along the curved motion path 620 the beam is emitted through the opening 420 and the one or more openings of the ribs 395 onto the substrate 325. In one or more embodiments, the ribs 395 include one or more transparent structures. The one or more transparent structures of the ribs 395 extend through the ribs 395. In one or more embodiments the one or more transparent structures of the ribs 395 are aligned with the curved motion path 620. During the heating operation, as the spot heater 470 moves along the curved motion path 620 the beam is emitted through the opening 420 and the one or more transparent structures of the ribs 395 onto the substrate 325. In one or more embodiments, the controller 347 tracks the position of the spot heater 470 as it moves along the curved motion path 620. In one or more embodiment, the controller 347 can turn of the beam as the spot heater 470 passed over a rib, a radiant heat source of the first energy module 310, or a combination thereof.

[0092] Although the curved motion path 620 is shown having a parabolic shape, it should be understood that this has been done for exemplary purposes and that the curved motion path 620 can have any shape, including a circular shape, a ellipse shape, a rectangular shape, a diamond shape, a hexagonal shape, an octagonal shape, or any other desired shape to heat the substrate 325.

[0093] Figure 7 is a schematic cross sectional view of the process chamber 300, according to one or more embodiments. In one or more embodiments, the process chamber 300 includes a spot heater assembly 770. The spot heaterassembly 770 is described in greater detail in Figure 8. The spot heater assembly 770 includes a rotatable spot heater 790 is disposed on a holder 792. The holder 792 is disposed on the stage 794, and the stage 794 is disposed on a support 702. In one or more embodiments, the stage 794 is movable on the support 702 using the motion device 607. In one or more embodiments, the stage 794 and support 702 are releasably fixed. The support 702 is coupled to the cover 306. An opening 420 is formed in the cover 306.

[0094] Figure 8 schematically illustrates an enlarged view of the high-energy radiant source assembly 770 of Figure 7, according to one or more embodiments. In one or more embodiments, the holder 792 includes a mounting bracket 878 coupled to the stage 794. The mounting bracket 878 may be coupled to the stage 794 via a bolt mechanism. In one or more embodiments, the mounting bracket 878 is coupled from a bottom side of the mounting bracket 878 to the stage 794 via a fastening mechanism 804, which may include a bolt. In some embodiments, the mounting bracket 878 may be a “C” shaped mounting bracket 878 or an “L” shaped mounting bracket 878; however, it is contemplated that the mounting bracket 878 may be of any suitable shape. The mounting bracket 878 may include a first arm 886 which extends parallel to a surface of the stage 794, and / or a second arm 888 which extends perpendicular to a surface of the stage 794. A source head 872 may be coupled to the mounting bracket 878. In one or more embodiments, the source head 872 may be coupled to the first arm 886 of the mounting bracket 878, such that the source head 872 is raised relative to the stage 794.

[0095] The first arm 886 of the mounting bracket 878, which is coupled to the source head 872, may be tilted such that the first arm 886 of the mounting bracket 878 and the second arm 888 of the mounting bracket are not perpendicular. The first arm 886 of the mounting bracket 878 may be tilted at an angle of between about -45 degrees and about 45 degrees relative to the surface 882 of the stage 794. For example, the source head 872 may be tilted 2 degrees relative to the surface 882 of the stage 794 and / or the surface of the substrate 325. The surface 882 of the stage 794 may be parallel to the substrate 325. In one or more embodiments, the first arm 886 of the mountingbracket 878 has a first central axis A and the second arm 888 of the mounting bracket 878 has a second central axis B. The first central axis A is not orthogonal to the second central axis B. The first central axis A of the first arm 886 of the mounting bracket 878 is not parallel to the substrate 325.

[0096] The mounting bracket 878 may include a third arm 889. The third arm 889 of the mounting bracket 878 may have a central axis E. The central axis E of the third arm 889 may be parallel to the surface 882 of the stage 794. The third arm 889 may be coupled to the stage 794. In some embodiments, the third arm 889 may be coupled to the stage 794 by a bolting mechanism and / or any other suitable connection mechanism. The second arm 888 of the mounting bracket 878 may be tilted, such that the central axis B of the second arm 888 is at an angle (such as oblique) to the central axis E of the third arm 889. The central axis B of the second arm 888 may be tilted between about -4 degrees and about 4 degrees from an axis perpendicular to the central axis E of the third arm 889. The central axis A of the first arm 886 may be perpendicular to the central axis B of the second arm.

[0097] The tilting of the of the first arm 886 of the mounting bracket 878 and the source head 872 may decrease and / or prevent back shot of an electromagnetic beam to the source head 872. Furthermore, tilting of the source head 872 may position the spot heater assembly 770 to direct the beam at the beam area 501 of the substrate 325.

[0098] The spot heater assembly 770 may further include a lens holder 890. The lens holder 890 may be coupled to the mounting bracket 878. In some embodiments, the lens holder 890 may be coupled to the second arm 888 of the mounting bracket 878. The lens holder 890 may be coupled to the mounting bracket 878 with a bolt connection, a screw connection, and / or any other suitable connection mechanism. In one or more embodiments, the lens holder 890 is coupled to the mounting bracket 878 with screw 802. The lens holder 890 may extend outward from the mounting bracket 878 such that the lens holder 890 is disposed between the source head 872 and the stage 794. The lens holder 890 may be tilted at the same angle or at an angle substantially similar to the tilt angle of the source head 872. As such, a central axis F of thelens holder 890 may be substantially parallel to a central axis G of the source head 872.

[0099] The lens holder 890 may include a lens 892. The lens 892 may be a telecentric lens. The telecentric lens 892 may defocus the light from the source head 872 into a beam. The telecentric lens 892 may collimate the light. In one or more embodiments, if the light has a focal point when incident on the telecentric lens 892, the light may leave the telecentric lens 892 with no focal point or a focal point at infinity. The telecentric lens 892 may focus the light from the source head 872 into a beam having a diameter of between about 2mm and about 10mm, for example between about 4mm and about 8mm. In one or more embodiments, the lens holder 890 includes one or more optical elements. In one or more embodiments, the spot heater assembly 770 includes multiple telecentric lenses 892. The position of the telecentric lenses 892 can be adjusted in order to focus and / or de-focus the beam. By focusing and / or defocusing the beam within the spot heater assembly 770, the diameter of the beam emitted onto the substrate 325 can be adjusted. In one or more embodiments, the diameter of the beam on the substrate 325 is between about 0.5 mm to about 0.7 mm. In one or more embodiments, the controller 347 determines the diameter of the beam by adjusting the position of the one or more optical elements within the spot heater assembly 770.

[0100] A source 874 may be offsite or onsite. The source may generate energy, for example electromagnetic radiation. In one or more embodiments, the source 874 is a diode laser source. The diodes may be electrically pumped. Recombination of the electrons and holes created by the applied current may introduce an optical gain. Reflection from the ends of a crystal may form an optical resonator, although the resonator may be external. In one or more embodiments, the source 874 is a fiber laser source. The fiber laser source may be a solid-state laser or a laser amplifier in which the light is guided due to a total internal reflection in a single mode optical fiber. The guiding of the light may allow for long gain regions. Furthermore, wave guiding properties of the fiber laser reduce thermal distortion of the light beam. Erbium and / or ytterbiumions may be active species in the fiber laser. The source 874 may provide a laser power of between about 20 watts and about 200 watts.

[0101] In one or more embodiments, the source 874 is a source of laser light. As such, the fiber cable 876 may be a light pipe to transmit the laser light into the process chamber 300. The fiber cable 876 may be a single pass amplifier.

[0102] In one or more embodiments, the source 874 is a source of seed photons. As such, the fiber cable 876 may be a lasing medium including at least one diode. In one or more embodiments, the diode is inside the fiber cable 876. The fiber cable 876 may be the oscillator. As such, the source 874 is a source of seed photons configured to start the stimulated emission of photons in the fiber cable 876 or in other such lasing mediums. The source 874 and the fiber cable 876, together, may comprise the laser.

[0103] During processing of the substrate 325 within the process chamber 300, the substrate 325 may be loaded onto the substrate support 330. During a heating process, the spot heater assembly 770 may provide localized heating to eliminate cold spots. As such, the spot heater assembly 770 may focus a beam of the light onto the beam area 501. The spot heater assembly 770 may focus the light beam while the substrate 325 is rotating within the process chamber 300. In one or more embodiments, the spot heater assembly 770 provides a pulsed light beam as described in Figure 5. It is further contemplated that the spot heater assembly 770 may be utilized within the process chamber 300. Furthermore, a source head 872 on a moveable track may be utilized to ensure appropriate tuning of the substrate 325. The moveable track may allow the source head 872 to sweep across the substrate 325, thus allowing for gross adjustments in a predetermined pattern. In such an embodiment, the source head 872 may move from the outer circumference radially inward, however other embodiments, such as movement from the origin radially outward, etc., are contemplated.

[0104] In one or more embodiments, the rotatable spot heater 790 is configured to emit multiple electromagnetic radiation beams at differentwavelengths. For example, the rotatable spot heater 790 can emit a first beam having a first peak wavelength and / or a first photon energy, a second beam having a second peak wavelength and / or a second photon energy, and a third beam having a third wavelength and / or a third photon energy. The multiple beams can be emitted simultaneously and / or sequentially. As an example, the first peak wavelength and / or the first photon energy can be used for a first process (e.g., a first deposition process using a first recipe), the second peak wavelength and / or the second photon energy can be used for a second process (e.g., an etching process using a second recipe), the third peak wavelength and / or the third photon energy can be used for a third process.

[0105] Figures 9A and 9B are schematic cross sectional views of the rotatable spot heater 790 disposed on the processing chamber 300, according to embodiments. As shown in Figure 9A, in one or more embodiments, the rotatable spot heater 790 is disposed over the substrate support. The rotatable spot heater 790 emits an electromagnetic beam B1 onto the substrate 325. In one or more embodiments, the angle of the beam B1 can be adjusted by adjusting the angle of the rotatable spot heater 790. In one or more embodiments, the rotatable spot heater 790 has a linear motion architecture 602 as described in Figure 6A. In one or more embodiments, the rotatable spot heater 790 has a fixed architecture 604 as described in Figure 6B. In one or more embodiments, the rotatable spot heater 790 has a curved motion architecture 606 as described in Figure 6C.

[0106] As shown in Figure 9B, in one or more embodiments, the rotatable spot heater 790 is disposed offset of the substrate support 330. The rotatable spot heater 790 is configured to emit an electromagnetic beam B1 onto the substrate 325 by angling the rotatable spot heater 790 in a manner that caused the beam B1 to be emitted onto the substrate 325. In one or more embodiments, the angle of the beam B1 can be adjusted by adjusting the angel of the rotatable spot heater 790. In one or more embodiments, the rotatable spot heater 790 has a linear motion architecture 602 as described in Figure 6A. In one or more embodiments, the rotatable spot heater 790 has a fixed architecture 604 asdescribed in Figure 6B. In one or more embodiments, the rotatable spot heater 790 has a curved motion architecture 606 as described in Figure 6C.

[0107] Figure 10 is a schematic cross sectional view of a processing chamber 1000, according to one or more embodiments. The processing chamber 1000 is similar to processing chamber 300 shown in Figures 3, and includes one or more aspects, features, components, operations, and / or properties thereof.

[0108] The processing chamber 1000 includes a heat source module 1010. The heat source module 1010 includes a plurality of diodes 1043, one or more backing plate sections 1200, and a plurality of supports 1300. In one or more embodiments, a gap 1250 separates each backing plate section 1200. In one or more embodiments, the one or more backing plate sections 1200 include one or more cooling channels 1400. A cooling fluid (e.g., water, air, purge gas, or another fluid) is flowed through the one or more cooling channels 1400 disposed in the one or more backing plate sections 1200 in order to cool the one or more backing plate sections 1200. In one or more embodiments, the process chamber 1000 includes an isolation plate disposed within the processing volume 303.

[0109] The heat source module 1010 is operable to heat the substrate 325. During a heating process, the plurality of diodes 1043 emit electromagnetic radiation. The plurality of diodes 1043 include, light emitting diodes (LEDs) and / or laser diodes (e.g., vertical-cavity surface-emitting laser(s) (VCSEL(s))). The present disclosure contemplates that other heat source(s) may be used in addition to or in place of at least one of the heat source module 1010. The other heat source(s) can include for example lamps (such as halogen lamps or UV lamps), resistive heaters, and / or or any other suitable heat source singly or in combination. The heat source module 1010 is configured to heat the substrate 325 during a heating operation. The present disclosure contemplates that the heat sources (such as lamps) herein can be disposed in a variety of orientations. For example, the heat sources can be oriented vertically (e.g., as shown for the lamps 104, 105 in Figure 1), horizontally (e.g., as shown for the lamps of the heat modules 310, 315) in Figure 3, and / or in other orientations.The present disclosure contemplates that the lamps can be oriented horizontally and can point toward a center of the processing chamber.

[0110] Figure 11 is a schematic top view of the processing chamber 1000, according to one or more embodiments. In one or more embodiments, the gaps 1250 are aligned with the cooling channels extending through the cover 306. The gaps 1250 allow the plurality of radiant heat sources of the first energy module 310 to be cooled. In one or more embodiments, the cooling channels 406 are exposed to the atmosphere allow the heat produced by the plurality of radiant heat sources of the first energy module 310 to be vented out through the cooling channels 406. In one or more embodiments, the cooling channels 406 are fluidly coupled to a cooling system, such as a gas cooling system. In one or more embodiments, the gas cooling system is configured to inject a cooling gas into the cooling channels 406 in order to cool the plurality of radiant heat sources of the first energy module 310.

[0111] Figure 12 is a schematic bottom view of a heat source module 1010, according to one or more embodiments. In one or more embodiments, the heat source module 1010 includes a plurality of diodes 1049 arranged into zones. For example, the plurality of diodes can be arranged into a first zone 1049a, a second zone 1049b, a third zone 1049c, a fourth zone 1049d, and a fifth zone 1049e. In one or more embodiments, the first zone 1049a is a circular arrangement of diodes. The first zone 1049a is configured to heat an inner area of the substrate 325. The second zone 1049b is disposed outwardly of the first zone 1049a. The second zone 1049b is an annular arrangement of diodes axially aligned with the first zone 1049a. The second zone 1049b is configured to heat a second area of the substrate 325. The third zone 1049c is disposed outwardly of the second zone 1049b. The third zone 1049c is an annular arrangement of diodes axially aligned with the first zone 1049a and the second zone 1049b. The third zone 1049c is configured to heat a third area of the substrate 325. The fourth zone 1049d is disposed outwardly of the third zone 1049c. The fourth zone 1049d is an annular arrangement of diodes axially aligned with the first zone 1049a, the second zone 1049b, and the third zone 1049c. The fourth zone 1049d is configured to heat a fourth area of thesubstrate 325. In one or more embodiments, a fifth zone 1049e is disposed outwardly of the fourth zone 1049d. The fifth zone is configured to heat a component, such as a cover ring, disposed about the substrate 325.

[0112] The plurality of diodes 1049 are mounted on one or more backing plate sections 1200. In one or more embodiments, the one or more backing plate sections 1200 include, for example, printed circuit boards (PCBs). In one or more embodiments, the plurality of diodes 1049 of each zone 1049a, 1049b, 1049c, 1049d, 1049e are independently controllable relative to one another. In one or more embodiments, the controller 347 operates each of the zones 1049a, 1049b, 1049c, 1049d, 1049e independently from one another. In one or more embodiments, the controller 347 controls each individual diode within each of the zones 1049a, 1049b, 1049c, 1049d, 1049e independently from one another.

[0113] Although the heat source module 1010 is shown including a first zone 1049a, a second zone 1049b, a third zone 1049c, a fourth zone 1049d, and a fifth zone 1049e, it should be understood that this has been done for exemplary purposes and that the heat source module 1010 can include any number of desired zones. In addition, each zone could have any desired shape, including a circular zone, an annular zone, a rectangular zone, a linear zone, a parabolic zone, a diamond zone, or a combination thereof.

[0114] In one or more embodiments, the heat source module 1010 is configured to emit multiple electromagnetic radiation beams at different wavelengths. For example, the heat source module 1010 can emit a first beam having a first peak wavelength and / or a first photon energy, a second beam having a second peak wavelength and / or a second photon energy, and a third beam having a third wavelength and / or a third photon energy. The multiple beams can be emitted simultaneously and / or sequentially. As an example, the first peak wavelength and / or the first photon energy can be used for a first process (e.g., a first deposition process using a first recipe), the second peak wavelength and / or the second photon energy can be used for a second process (e.g., an etching process using a second recipe), the third peak wavelength and / or the third photon energy can be used for a third process.

[0115] In one or more embodiments, the heat source module 1010 is disposed upstream from the processing volume 303. The heat source module 1010 can be configured to preheat the one or more process gases before the one or more process gases enter the process volume and / or heat the one or more process gases as the one or more process gases flow in the process volume.

[0116] Figure 13 is a schematic cross sectional view of a processing chamber 2000, according to one or more embodiments. The processing chamber 2000 is similar to processing chamber 300 and the processing chamber 1000 shown in Figure 3 and Figure 10 respectively, and includes one or more aspects, features, components, operations, and / or properties thereof.

[0117] The processing chamber 2000 includes a heat source module 1210. The heat source module 1210 includes a plurality of diodes 1043, one or more backing plate sections 1200. In one or more embodiments, a gap 1250 separates each backing plate section 1200. In one or more embodiments, the one or more backing plate sections 1200 include one or more cooling channels 1400. A cooling fluid is flowed through the one or more cooling channels 1400 disposed in the one or more backing plate sections 1200 in order to cool the one or more backing plate sections 1200. In one or more embodiments, the process chamber 2000 includes an isolation plate disposed within the processing volume 303.

[0118] In one or more embodiments, the heat source module 1210 is disposed within the upper heating area 390. In one or more embodiments, the ribs 395 support each of the one or more backing plate sections 1200. The gaps 1250 are alligned with the ribs 395, so that the ribs 395 can extend through the gaps 1250 and the ribs 395 can be coupled to each of the one or more backing plate sections 1200. In one or more embodiments, the one or more backing plate sections 1200 are coupled to a lower surface of the cover 306 within the upper heating area.

[0119] The heat source module 1210 is operable to heat the substrate 325. During a heating process, the plurality of diodes 1043 emit electromagneticradiation. The plurality of diodes 1043 include, light emitting diodes (LEDs) and / or laser diodes (e.g., vertical-cavity surface-emitting laser(s) (VCSEL(s))). The present disclosure contemplates that other heat source(s) may be used in addition to or in place of at least one of the heat source module 1210. The other heat source(s) can include for example lamps (such as halogen lamps or UV lamps), resistive heaters, and / or or any other suitable heat source singly or in combination. The heat source module 1210 is configured to heat the substrate 325 during a heating operation.

[0120] In one or more embodiments, the heat source module 1210 is configured to emit multiple electromagnetic radiation beams at different wavelengths. For example, the heat source module 1210 can emit a first beam having a first peak wavelength and / or a first photon energy, a second beam having a second peak wavelength and / or a second photon energy, and a third beam having a third wavelength and / or a third photon energy. The multiple beams can be emitted simultaneously and / or sequentially. As an example, the first peak wavelength and / or the first photon energy can be used for a first process (e.g., a first deposition process using a first recipe), the second peak wavelength and / or the second photon energy can be used for a second process (e.g., an etching process using a second recipe), the third peak wavelength and / or the third photon energy can be used for a third process.

[0121] In one or more embodiments, the heat source module 1210 is disposed upstream from the processing volume 303. The heat source module 1210 can be configured to preheat the one or more process gases before the one or more process gases enter the process volume.

[0122] Figures 14A and 14B are schematic views of the heat source module 1210, according to one or more embodiments. Figure 14A is a schematic isometric view of the heat source module 1210, according to one or more embodiments. Figure 14B is a schematic bottom view the heat source module 1210, according to one or more embodiments. In one or more embodiments, the heat source module 1210 has an hourglass architecture 1390. The hourglass architecture 1390 includes a first portion1391 and a second portion1392. The first portion1391 and the second portion 1392 are mirrorimages of one another over an axis 1393. The first portion 1391 and the second portion 1392 each include back boundary 1401 and a front boundary 1402. The back boundary 1401 and the front boundary 1402 are substantially parallel to one another. The back boundary 1401 has a greater length than the front boundary 1402. The first portion 1391 and the second portion 1392 further include a plurality of side boundaries 1403 extending from the back boundary 1401. The plurality of side boundaries 1403 are perpendicular to the back boundary 1401. The first portion 1391 and the second portion 1392 further include a plurality of first slanted boundaries 1404. The plurality of first slanted boundaries 1404 extend from the plurality of side boundaries 1403 at a nonnormal angle. The first portion 1391 and the second portion 1392 further include a plurality of second slanted boundaries 1405. The plurality of second slanted boundaries extend from the front boundary 1402 at a non-normal angle and connect to the plurality of first slanted boundaries 1404 at a non-normal angle. In one or more embodiments each portion1391 and 1392 include one or more backing plate sections 1200. Each backing plate section 1200 is separated by a gap 1250. In one or more embodiments, the gaps are aligned with the cooling channels 406. The heat source module 1210 is disposed over the substrate 325. During a heating process as the substrate 325 is rotated, the plurality of diodes 1043 of the heat source module 1210 emit electromagnetic radiation. The hourglass architecture 1390 of the heat source module 1210 promotes a uniform temperature profile over the substrate 325.

[0123] The first portion 1391 and the second portion 1392 respectively include sections 1391 a-1391 d, 1392a-1392d (four are shown for each) spaced from each other. In one or more embodiments, the sections 1391 a-1391 d, 1392a-1392d are respectively aligned between adjacent heat sources (e.g., linear lamps) of the first module 310, and / or are respectively aligned between adjacent ribs 395. In one or more embodiments, the sections 1391 a-1391 d, 1392a-1392d are respectively aligned between adjacent cooling channels 406, and / or are respectively aligned between adjacent gaps 1250.

[0124] Figure 15 is a schematic bottom view of a heat source module 1510, according to one or more embodiments. The heat source module 1510 is similarto heat source module 1010 and the heat source module 1310 shown in Figure 12 and Figures 14A, 14B respectively, and includes one or more aspects, features, components, operations, and / or properties thereof.

[0125] In one or more embodiments, the heat source module 1510 includes a plurality of diodes 1049 arranged into separate zones. For example, the plurality of diodes can be arranged into an inner zone 1549a and an inner zone 1549b. In one or more embodiments, the inner zone 1549a is an arrangement of diodes having the hourglass architecture 1390. The inner zone 1549a is configured to heat the substrate 325. During a heating process as the substrate 325 is rotated, the plurality of diodes 1043 of the inner zone 1549a emit electromagnetic radiation. The hourglass architecture 1390 of the inner zone 1549a promotes a uniform temperature profile over the substrate 325. The outer zone 1549b is disposed outwardly of the inner zone 1549a. The outer zone 1549b is configured to heat a component, such as a cover ring, disposed about the substrate 325.

[0126] The plurality of diodes 1049 are mounted on one or more backing plate sections 1200. In one or more embodiments, the one or more backing plate sections 1200 include, for example, printed circuit boards (PCBs). In one or more embodiments, the plurality of diodes 1049 of each zone 1549a, 1549b, are independently controllable relative to one another. In one or more embodiments, the controller 347 operates each of the zones 1549a, 1549b independently from one another. In one or more embodiments, the controller 347 controls each individual diode within each of the zones 1549a, 1549b independently from one another.

[0127] Although the heat source module 1510 is shown including an inner zone 1549a and an outer zone 1549b it should be understood that this has been done for exemplary purposes and that the heat source module 1510 can include any number of desired zones. In addition, each zone could have any desired shape, including a circular zone, an annular zone, a rectangular zone, a linear zone, a parabolic zone, a diamond zone, or a combination thereof.

[0128] In one or more embodiments, the heat source module 1510 is configured to emit multiple electromagnetic radiation beams at different wavelengths. For example, the heat source module 1510 can emit a first beam having a first peak wavelength and / or a first photon energy, a second beam having a second peak wavelength and / or a second photon energy, and a third beam having a third wavelength and / or a third photon energy. The multiple beams can be emitted simultaneously and / or sequentially. As an example, the first peak wavelength and / or the first photon energy can be used for a first process (e.g., a first deposition process using a first recipe), the second peak wavelength and / or the second photon energy can be used for a second process (e.g., an etching process using a second recipe), the third peak wavelength and / or the third photon energy can be used for a third process.

[0129] In one or more embodiments, the heat source module 1510 is disposed upstream from the processing volume 303. The heat source module 1210 can be configured to preheat the one or more process gases before the one or more process gases enter the process volume.

[0130] Figure 16A is a schematic bottom view of a heat source module 1610, according to one or more embodiments. The heat source module 1610 includes a plurality of diodes 1043. In one or more embodiments, the controller 347 operates each individual diode within the plurality of diodes 1043 independently from one another. A desired pattern 1620 can be formed in the plurality of diodes 1043. The pattern 1620 is formed by turning on the desired diodes within the plurality of diodes 1043. The desired diodes form the desired pattern 1620. The desired diodes within the pattern 1620 emit electromagnetic radiation towards the substrate 325. The electromagnetic radiation is used to create a uniform temperature profile over the substrate. The desired pattern can include any number of zones or geometries. In one or more embodiments, the desired pattern includes the hourglass architecture 1390 described herein.

[0131] Figure 16B is a schematic bottom view of a heat source module 1610, according to one or more embodiments. The heat source module 1610 includes a plurality of diodes 1043. In one or more embodiments, the controller 347 operates each individual diode within the plurality of diodes 1043 independentlyfrom one another. A desired pattern 1620 can be formed in the plurality of diodes 1043. The pattern 1620 is formed by turning on the desired diodes within the plurality of diodes 1043. The desired diodes form the desired pattern 1620. The desired diodes within the pattern 1620 emit electromagnetic radiation towards the substrate 325. The electromagnetic radiation is used to create a uniform temperature profile over the substrate. The desired pattern can include any number of zones or geometries. In one or more embodiments, the desired pattern includes a full wedge architecture 1690. The full wedge architecture 1690 includes a first portion 1691 and a second portion 1692. The first portion 1691 and the second portion 1692 are mirror images of one another over an axis 1693. In one or more embodiments, each of the first portion 1691 and the second portion 1692 have a triangular shape. In one or more embodiments, at least one boundary of both the first portion 1691 and the second portion 1692 is curved. The present disclosure also contemplates that the number of diodes 1043 can be reduced down to span the first portion 1691 and the second portion 1692.

[0132] Figure 16C is a schematic bottom view of a heat source module 1610, according to one or more embodiments. The heat source module 1610 includes a plurality of diodes 1043. In one or more embodiments, the controller 347 can operate each individual diode or respective groups of diodes within the plurality of diodes 1043 independently from one another. A desired pattern 1620 can be formed in the plurality of diodes 1043. The pattern 1620 is formed by turning on the desired diodes within the plurality of diodes 1043. The desired diodes form the desired pattern 1620. The desired diodes within the pattern 1620 emit electromagnetic radiation towards the substrate 325. The electromagnetic radiation is used to create a uniform temperature profile over the substrate. The desired pattern can include any number of zones or geometries. In one or more embodiments, the desired pattern includes a rectangular architecture 1695. In one or more embodiments, every diode within the plurality of diodes 1043 of the heat source module 1610 having a rectangular architecture 1695 is turned on in order to emit electromagnetic radiation towards the substrate 325.

[0133] In one or more embodiments, the heat source module 1610 is configured to emit multiple electromagnetic radiation beams at different wavelengths. For example, the heat source module 1610 can emit a first beam having a first peak wavelength and / or a first photon energy, a second beam having a second peak wavelength and / or a second photon energy, and a third beam having a third wavelength and / or a third photon energy. The multiple beams can be emitted simultaneously and / or sequentially. As an example, the first peak wavelength and / or the first photon energy can be used for a first process (e.g., a first deposition process using a first recipe), the second peak wavelength and / or the second photon energy can be used for a second process (e.g., an etching process using a second recipe), the third peak wavelength and / or the third photon energy can be used for a third process.

[0134] In one or more embodiments, the heat source module 1610 is disposed upstream from the processing volume 303. The heat source module 1610 can be configured to preheat the one or more process gases before the one or more process gases enter the process volume.

[0135] Figure 17 includes a schematic side cross sectional view of a processing chamber 1700, according to one or more embodiments. The processing chamber 1700 is similar to processing chamber 300 shown in Figure 3, and includes one or more aspects, features, components, operations, and / or properties thereof.

[0136] The processing chamber 1700 includes one or more heat assemblies 1794, 1798. The one or more heat assemblies 1794, 1798 respectively include a radiation source 1765 (such as a laser source) and one or more reflectors 1766 (one is shown in Figure 17). In one or more embodiments, the radiation source 1765 is a galvanometer laser source. The processing chamber 1700 includes the controller 347 in communication with the one or more heat assemblies 1794, 1798. The controller 347 can control power to the one or more heat assemblies 1794, 1798 in an open-loop manner or a closed-loop manner. For example, the closed-loop manner can account for a substrate map (such as a metrology map, a temperature map, a dopant map, and / or a deposition map) for the current processing chamber 1700 and / or a substratemap for a previous processing iteration. As another example, the closed-loop manner can account for real-time temperature measurements of at least one of one or more sensors. In one or more embodiments, the process chamber 1700 includes an isolation plate disposed within the processing volume 303.

[0137] In one or more embodiments, the one or more heat assemblies 1794, 1798 are configured to emit multiple electromagnetic radiation beams at different wavelengths. For example, one or more heat assemblies 1794, 1798 can emit a first beam having a first peak wavelength and / or a first photon energy, a second beam having a second peak wavelength and / or a second photon energy, and a third beam having a third wavelength and / or a third photon energy. The multiple beams can be emitted simultaneously and / or sequentially. As an example, the first peak wavelength and / or the first photon energy can be used for a first process (e.g., a first deposition process using a first recipe), the second peak wavelength and / or the second photon energy can be used for a second process (e.g., an etching process using a second recipe), the third peak wavelength and / or the third photon energy can be used for a third process.

[0138] Figure 18 is a schematic side view of a heat assembly 1800, according to one or more embodiments.

[0139] Figure 19 is a schematic top view of the heat assembly 1800, according to one or more embodiments.

[0140] Figures 18 and 19 are described together. The heat assembly 1800 can be used as one or more of the one or more heat assemblies 1794, 1798 shown in Figure 17. The heat assembly 1800 includes a first reflector 1801 pivotable relative to a first axis A1 , and a radiation source 1805 oriented to emit radiation R1 toward the first reflector 1801. The radiation R1 reflects off of the first reflector 1801 as a reflected radiation R2. The heat assembly 1800 includes a second reflector 1808 oriented to receive the reflected radiation R2 from the first reflector 1801 and reflect the reflected radiation R2 as emitted radiation R3 to a target location in the processing volume 303. The second reflector 1808 pivotable relative to a second axis A2. The second axis A2 isoriented nonparallel to the first axis A1. For example, the second axis A2 can be orthogonal, offset, and / or tangential to the first axis A1. The heat assembly 1800 includes one or more lenses 1810 that focus and / or collimate the emitted radiation R3. In one or more embodiments, the first reflector 1801 includes a first mirror (such as a galvanometer mirror), and the second reflector 1808 includes a second mirror (such as a galvanometer mirror). Although two reflectors 1801, 1808 are shown, a variety of numbers of reflectors are contemplated. For example, one reflector, three reflectors, four reflectors, or another number of reflectors can be used.

[0141] The heat assembly 1800 includes a first actuator 1811 including a first link 1812 coupled to the first reflector 1801 along the first axis A1. The first actuator 1811 pivots the first reflector 1801 to move the target location azimuthally along the substrate 325, and the second actuator 1813 pivots the second reflector 1808 to move the target location radially along the substrate 325. The heat assembly 1800 includes a second actuator 1813 including a second link 1814 coupled to the second reflector 1808 along the second axis A2. In one or more embodiments, the first actuator 1811 and the second actuator 1813 respectively include a motor, such as a galvanometer motor, a stepper motor, a rotating actuator, and / or a linear actuator. In one or more embodiments, the motor is a high speed motor. In one or more embodiments, the motor moves (e.g., scans) a spot of heating energy at a speed up to 25 meters per second, such as a speed within a range of 20 meters per second to 25 meters per second.

[0142] The controller 347 is operable to control the heat assembly 1800 based on a parameter (such as temperature) of the target location that is measured by at least one or more sensors. The controller 347 causes an input to be adjusted based on the parameter. In one or more embodiments, the input includes one or more of a first position angle PA1 for the first reflector 1801 , or a second position angle PA2 for the second reflector 1808. In one or more embodiments, the input includes one or more of a first angular velocity for the first reflector, or a second angular velocity for the first reflector. In one or more embodiments, the input includes one or more of a dwell time, a radiation power(such as a laser power) for the radiation source, or a pulse frequency for the radiation source. In such an embodiment, the energy to locations on the substrate can be varied by one or more of dwell time, energy source power, or source pulse frequency. The controller 347 is configured to determine if a parameter difference (such as a temperature difference and / or a film thickness difference) exceeds a threshold, and adjust the input if the parameter difference exceeds the threshold. The processing chamber 1700 includes the cover 306 disposed outwardly of the processing volume 303. In one or more embodiments, the heat assembly 1800 includes a reflector housing mounted to the cover 306.

[0143] The radiation source 1805 can be an electromagnetic radiant source, and / or can be coupled to optical fibers. The electromagnetic radiant source may be a pulsing electromagnetic radiant source or a continuous wave (CW) electromagnetic radiant source.

[0144] The electromagnetic radiant source may be a high-energy radiant source, such as a laser. Examples of laser sources that may be used include crystal lasers, laser diodes and arrays, and VCSEL’s. High intensity LED sources may also be used, and collimators may be used to collimate light emitted from the LED source to form a light beam. Wavelength of the emitted radiation may generally be in the ultraviolet, visible, and / or infrared spectrum, from about 200 nm to about 900 nm, for example 810 nm, and the emitted radiation may be monochromatic, narrow band, broadband, or ultra-broadband such as a white laser. The radiation source 1805 can emit high intensity electromagnetic radiation, which can be routed through fibers to emit a radiant beam. An end of the optical fiber(s) can have one or more optical features, including lenses, faceted surfaces, diffuse surfaces, filters and other coatings, to direct or condition the electromagnetic radiation exiting the fiber. Alternately, one or more optical elements can be coupled to the end of the optical fiber(s). The radiation source 1805 is thus configurable and swappable. The radiant beams from the radiation source 1805 may have the same wavelength or different wavelengths. In one or more embodiments, the radiant beams havedifferent wavelengths for heating different materials formed on the substrate 325.

[0145] In one or more embodiments, the heat assembly 1800 is a spot heater capable of rasterizing the substrate 325. For example, the rasterization can induce and / or correct non-uniform ities in substrate maps.

[0146] Power density of the radiation source 1805 may range from about 1 W / cm2 to about 1000 W / cm2 , for example about 1 W / cm2 to about 200 W / cm2 , for example about 200 W / cm2 to about 1000 W / cm2. Each heat assembly 1794, 1798 is coupled to and disposed on an upper surface of the cover 306, and directs radiant energy R through an opening of the cover 306 (which may have an optically transparent window therein) of the cover 306. In one or more embodiments the radiant energy R is directed towards the substrate in between the ribs 395 and each heat sources of the first energy module 310. Radiant energy R from each heat assembly 1794, 1798 is directed towards the substrate support 330 in order to impinge upon one or more predetermined locations of the substrate 325. The radiant energy R selectively heats predetermined locations of the substrate, resulting in more uniform substrate temperature (and thus more uniform deposition) during processing. The thermal energy provided by each heat assembly 1794, 1798 is directed to a location on the substrate 325 in response to temperature measurements by one or more sensors and one or more instructions from the controller 347.

[0147] Figure 20 is a schematic side view of a heat assembly 1900, according to one or more embodiments.

[0148] The heat assembly 1900 can be used as one or more of the one or more heat assemblies 1794, 1798 shown in Figure 1. The heat assembly 1900 includes a polygonal reflector 1901 pivotable relative to an axis AA1, and the radiation source 1805. In one or more embodiments, the polygonal reflector 1901 includes a prism. The radiation source 1805 is oriented to emit radiation R1 toward at least one outer surface 1902 of the polygonal reflector 1901. The polygonal reflector 1901 includes a plurality of outer surfaces 1902a-1902h, and at least two of the outer surfaces have differing lengths (such as a first lengthL1 and a second length L2). In one or more embodiments, the at least one outer surface 1902 is a mirror surface. The mirror surface can include, for example, a gold surface and / or a polished aluminum surface. Other mirror surfaces are contemplated.

[0149] The polygonal reflector 1901 is oriented to reflect the radiation R1 (as reflected radiation R2) to a target location in the processing volume 303. The axis AA1 extends parallel to a plane of the at least one outer surface 1902. In one or more embodiments, the polygonal reflector 1901 is rotatable about the axis AA1. For example, an actuator 1906 can pivot the polygonal reflector 1901 along a rotational direction RD1. The pivoting of the polygonal reflector 1901 aligns a different outer surface 1902 with the radiation R1.

[0150] For example, the pivoting of the polygonal reflector 1901 moves an incidence of the radiation R1 from a first outer surface 1902a of the reflector 1901 to a second outer surface 1902b of the reflector 1901. The second outer surface 1902b is oriented at an angle AG1 relative to the first outer surface 1902a. The axis AA1 extends through two opposing outer surfaces 1902 of the polygonal reflector 1901.

[0151] Figure 21 is a schematic side cross sectional view of a processing chamber 2101, according to one or more embodiments. The processing chamber 2101 is similar to the processing chamber 300 shown in Figure 3, and includes one or more aspects, features, components, operations, and / or properties thereof. The processing chamber 2101 shown in Figure 21 includes a heat source assembly 2100. In one or more embodiments, the heat source assembly 2100 is coupled to the cover 306. The heat source assembly 2100 includes a plurality of cooling channels. The heat source assembly includes one or more radiation sources 2105 and a digital micromirror device (DMD) 2110. In one or more embodiments, the one or more radiation sources 2105 includes a laser source. The DMD 2110 includes a plurality of micromirrors 2115 disposed on a surface of the DMD 2110. Each of the micromirrors 2115 can be controlled independently from one another. In one or more embodiments, the process chamber 2101 includes an isolation plate disposed within the processing volume 303.

[0152] During a heating operation the one or beams B1 of electromagnetic radiation or emitted by the one or more radiation sources 2105 towards the DMD 2110. The one or more beams B1 are reflected by each of the micromirrors 2115 of the DMD 2110 towards substrate 325. The one or more beams B1 are reflected by the plurality of micromirrors 2115 as a plurality of reflections. The plurality of reflections include at least a first reflection R1 and a second reflection R2. The first reflection R1 is reflected towards a first location on the upper surface of the substrate 325. The second reflection R2 is reflected towards a second location on the upper surface of the substrate 325. The first reflection R1 and the second reflection R2 are directed towards the substrate inbetween the ribs 395 and each heat sources of the first energy module 310. The micromirrors 2115 on the DMD 2110 can any form any number of reflections. The reflections can directed towards any location on the substrate 325. The plurality of reflections R1, R2 can create a desired pattern on the substrate 325 to allow for a high degree of control of a temperature profile across the substrate 325. In one or more embodiments, the controller 347 determines pattern generated by the plurality of reflections R1, R2 by individually controlling each micromirror 2115 on the DMD 2110.

[0153] In one or more embodiments, the heat source assembly 2100 is configured to emit multiple electromagnetic radiation beams at different wavelengths. For example, the heat source assembly 2100 can emit a first beam having a first peak wavelength and / or a first photon energy, a second beam having a second peak wavelength and / or a second photon energy, and a third beam having a third wavelength and / or a third photon energy. The multiple beams can be emitted simultaneously and / or sequentially. As an example, the first peak wavelength and / or the first photon energy can be used for a first process (e.g., a first deposition process using a first recipe), the second peak wavelength and / or the second photon energy can be used for a second process (e.g., an etching process using a second recipe), the third peak wavelength and / or the third photon energy can be used for a third process.

[0154] Figure 22 is an enlarged perspective view of the DMD 2110 shown in Figure 21, according to one or more embodiments. The DMD 2110 includesa plurality of micromirrors 2115. Each micromirror 2115 is rotatable in at least one dimension along a single axis. In one or more embodiments, each micromirror 2115 can be rotated in two dimensions along two axes. The axes can be perpendicular with respect to each other. Each micromirror 2115 can be controlled independently from one another. The controller 347 determines the position of each micromirror 2115 to generate any desired pattern of reflections on the upper surface of the substrate 325.

[0155] Figure 23 is a schematic block diagram of a method 2300 of processing a substrate, according to one or more embodiments. The method 2300 may be performed using one or more components described herein.

[0156] Optional operation 2302 of the method 2300 includes positioning a substrate on a substrate support disposed within a processing chamber. In one or more embodiments, operation 2302 is performed using any of the processing chambers includes any of the processing chambers described herein including the processing chamber 100, the processing chamber 300, the processing chamber 1000, the processing chamber 2000, the processing chamber 1700, or the processing chamber 2101.

[0157] Operation 2304 of the method 2300 includes heating a substrate positioned on the substrate support of the processing chamber. In one or more embodiments the substrate is heated using a spot heater. In one or more embodiments, operation 2304 is performed using the spot heater 170, the spot heater 470, or the spot heater assembly 770, the one or more heat assemblies 1794, the heat source assembly 2100, or a combination thereof. In one or more embodiments, heating the substrate includes rotating the substrate on the substrate support. In one or more embodiments, heating the substrate further includes emitting an electromagnetic radiation beam from the spot heater onto a beam area on a first surface of the substrate. In one or more embodiments, the size of the beam area can be adjusted by adjusting the position of one or more optical elements within the spot heater. The beam can be emitted continuously or pulsed. In one or more embodiments the beam is emitted continuously. When the beam is emitted continuously, a region of the substrate is heated. In one or more embodiments the region is a ring shaped region. Asthe substrate is rotated, the beam is emitted on every point along the region. In one or more embodiments the beam is pulsed. In one or more embodiments, the pulsing of the beam is controlled to emit the beam on a desired area on the substrate.

[0158] In one or more embodiments, operation 2304 further includes adjusting the position of the spot heater. The position of the spot heater may be adjusted using one or more of the motion architectures descried herein including the linear motion architecture 602, and / or the curved motion architecture 606. In one or more embodiments, the angle of the beam is adjusted. The angle of the beam is adjusted using the rotatable spot heater 790 described herein. As an example, the spot heater can be laterally moved and / or angularly moved.

[0159] In one or more embodiments, operation 2304 includes heating of the substrate includes emitting an ultraviolet (UV) light toward the processing volume. In one or more embodiments, the UV light has a peak intensity at the target wavelength described above.

[0160] The heating includes heating the substrate to a target temperature. In one or more embodiments the substrate is heated using one or more of the heat source module described herein, including the heat source module 1010, the heat source module 1210, heat source module 1510, heat source module 1610, or a combination thereof. The plurality of diodes within the heat source module emit electromagnetic radiation towards the substrate. The electromagnetic radiation is used to heat the substrate. The target temperature can be within a range of 100 degrees Celsius to 1 ,400 degrees Celsius. In one or more embodiments, the target temperature for the substrate is less than 500 degrees Celsius. In one or more embodiments, the target temperature is 400 degrees Celsius or less, such as less than 200 degrees Celsius (for example about 150 degrees Celsius). In one or more embodiments, the target temperature for the substrate is 400 degrees Celsius or higher or 600 degrees Celsius or less. In one or more embodiments, the target temperature for the substrate is within a range of 380 degrees Celsius to 600 degrees Celsius, for example 400 degrees Celsius to 500 degrees Celsius. In one or moreembodiments, the target temperature for the substrate is about 400 degrees Celsius. Other target temperature values are contemplated.

[0161] Operation 2306 includes flowing one or more process gases over the substrate. The one or more process gases are flowed across the substrate the substrate. In one or more embodiments, the one or more process gases flow from an inlet to the processing volume of the processing chamber, across the substrate, into an outlet of the processing volume of the processing chamber. In one or more embodiments, the inlet to the processing chamber and the outlet to the processing chamber are disposed opposite of one another.

[0162] Operation 2308 includes depositing one or more layers on the substrate. In one or more embodiments, after operation 2304, the temperature of the substrate is increased. The increased temperature of the substrate causes the one or more process gases to deposit one or more layers of a deposition material over the substrate as the one or more process gases flow across the substrate.

[0163] Figure 24 is a schematic side cross sectional view of a processing chamber 2401, according to one or more embodiments. The processing chamber 2401 is similar to the processing chamber 300 shown in Figure 3, and includes one or more aspects, features, components, operations, and / or properties thereof.

[0164] The processing chamber 2401 shown in Figure 24 includes a heat source assembly 2400. In one or more embodiments, the heat source assembly 2400 includes one or more heat source modules 1610. The one or more heat source modules 1610 are disposed within the upper heating area 390, the lower heating area 392, or a combination thereof. The one or more heat source modules can be coupled to one or more inner surfaces of the cover 306, the chamber bottom 308, the one or more sidewalls extending between the cover 306 and the chamber bottom 308, or a combination thereof.

[0165] The heat source assembly 2400 is configured to heat one or more desired areas within the processing chamber 2401, such as the substratesupport 330, the inlet port 360, the outlet port 364, or a combination thereof. A concentration of heat throughout the processing chamber 2401 can be altered using the heat source modules 1610. For example, the light emitters of the heat source modules 1610 adjacent the inject side of the processing chamber 2401 can be used to increase concentration of heat adjacent the inject side during a deposition operation (such as to heat process gases for deposition) flowing over the substrate, and the heat sources modules 1610 adjacent the exhaust side of the processing chamber 2401 can be used to increase concentration of heat adjacent the exhaust side during a cleaning operation (such as to heat cleaning gases for cleaning exhaust components). The one or more heat source modules 1610 respectively include a plurality of diodes 1043 as described herein. In one or more embodiments, each of the heat source modules 1610 of the heat source assembly 2400 is operated by the controller 347. In one or more embodiments, the controller 347 operates each individual diode within the plurality of diodes 1043 independently from one another. A pattern 1620 (Figures 16A-16C) can be formed in the plurality of diodes 1043 of each of the heat source modules 1610 of the heat source assembly 2400. The desired pattern 1620 can include any of the patterns described herein, including but not limited to the hourglass architecture 1390, the full wedge architecture 1690, the rectangular architecture 1695, or a combination thereof. The pattern 1620 is formed by turning on the desired diodes within the plurality of diodes 1043. For example, the pattern 1620 can be formed by turning on diodes 1043 arranged into the pattern 1620, or the pattern 1620 can be formed by turning on a subset of diodes 1043 that correspond to the pattern 1620. It should be understood that the desired pattern 1620 can include any number of zones or geometries. The chamber body of the processing chamber 2401 is in the shape of a rectangular box that includes six sidewalls. The heat source modules 1610 are disposed to be mounted on at least part of each of the respective six sidewalls. The light emitters of the heat source modules 1610 can include diodes 1043 (such as light emitting diodes (LEDs) and / or laser diodes) and / or micromirrors (e.g., DMDs). Other light emitters are contemplated. The heat source modules 1610 can include example OLED display(s), LCD display(s), and / or other display(s).In one or more embodiments, the process chamber 2401 includes an isolation plate disposed within the processing volume 303.

[0166] The heat source assembly 2400 can be configured to emit a greater amount of radiation between the ribs 395 than through the ribs 395. In one or more embodiments, the density (e.g., concentration) of the diodes 1043 is greater between the ribs 395 than aligned with (e.g., over or under) the ribs 395. In one or more embodiments, the power supplied to the diodes between the ribs 395 is greater than the power supplied to the diodes 1043 aligned with (e.g., over or below) the ribs 395. In one or more embodiments, the controller 347 activates the diodes 1043 aligned between the ribs 395 and deactivates the diodes align with (e.g., positioned over or under) the ribs 395 during a heating operation. Although the processing chamber 2401 is shown without first energy module 310 and the second energy module 315, it is contemplated that the processing chamber 2401 can include the first energy module 310, the second energy module 315, the heat source assembly 2400, or a combination thereof.

[0167] Benefits of the present disclosure include reliable gas activation; uniform substrate temperature; faster growth rates; enhanced film quality; faster substrate heating; adjustability of gas activation; increased growth rates; and more uniform film growth and / or dopant concentration. Benefits also include enhanced device performance; reduced or eliminated occurrences of unintended dopant diffusions; efficient processing; and increased throughput.

[0168] It is contemplated that one or more aspects disclosed herein may be combined. As an example, one or more aspects, features, components, operations and / or properties of the processing chamber 100, the spot heater 170, the processing chamber 300, the spot heater 470, the linear motion architecture 602, the fixed architecture 604, the curved motion architecture 606, the spot heater assembly 770, the processing chamber 1000, the heat source module 1010, the processing chamber 2000, the heat source module 1210, the hourglass architecture 1390, the heat source module 1510, a heat source module 1610, the processing chamber 1700, the heat assembly 1800, the heat assembly 1900, a processing chamber 2101, the processing chamber 2401,and / or the method 2300 may be combined. Moreover, it is contemplated that one or more aspects disclosed herein may include some or all of the aforementioned benefits.

[0169] It is contemplated that the various heating arrangements described herein can be used in a variety of chamber architectures. For example, the heating arrangements shown in Figures 14-22 (such as the heat source module 1210 for example) can be used in relation to the chamber architecture shown for the process chamber 100 in Figure 1 and / or the chamber architecture shown for the process chamber 300 in Figure 3.

[0170] While the foregoing is directed to embodiments of the present disclosure, other and further embodiments of the disclosure may be devised without departing from the basic scope thereof, and the scope thereof is determined by the claims that follow.

Claims

What is claimed is:

1. A processing chamber, comprising:a first plate, a second plate, and a plurality of sidewalls at least partially defining a processing volume;a cover disposed above the first plate, the cover and the first plate at least partially defining an upper heating area;a first energy module disposed within the upper heating area, the first energy module comprising a plurality of heating elements;a plurality of ribs disposed around the first plate, the second plate, and the sidewalls;a substrate support disposed in the processing volume; andone or more spot heaters configured to emit a radiation beam toward the substrate support, the one or more spot heaters comprising:a collimator supported by a holder;a stage, wherein the holder is disposed on the stage; and a support, wherein the stage is disposed on the support.

2. The processing chamber of claim 1 , wherein the collimator includes one or more optical elements, wherein a position of the one or more optical elements are adjustable to adjust the radiation beam.

3. The processing chamber of claim 1 , wherein the one or more spot heaters are positioned and oriented to emit the radiation beam between the plurality of ribs.

4. The processing chamber of claim 1 , wherein the one or more spot heaters are positioned and oriented to emit the radiation beam through the plurality of ribs.

5. The processing chamber of claim 1 , wherein the stage is movable along a channel formed in the support.

6. The processing chamber of claim 1 , wherein an angle of incidence of the radiation beam is adjustable by angularly moving the holder.

7. The processing chamber of claim 1 , wherein the one or more spot heaters are configured to pulse the radiation beam.

8. The processing chamber of claim 7, wherein the one or more spot heaters are configured to pulse the radiation beam toward a region of the substrate support.

9. The processing chamber of claim 1 , wherein the one or more spot heaters are configured to emit multiple electromagnetic radiation beams at different peak wavelengths.

10. The processing chamber of claim 1 , wherein the plurality of ribs include one or more openings, wherein the radiation beam is configured to be emitted through the one or more openings.

11. A processing chamber, comprising:a first plate, a second plate, and a plurality of inner sidewalls defining a processing volume;a cover disposed outwardly of the first plate, the cover and the first plate at least partially defining a heating area;a first energy module disposed in the heating area, the first energy module comprising a plurality of heating elements;a substrate support disposed in the processing volume; anda heat source module configured to emit electromagnetic radiation toward the substrate support, the heat source module comprising a plurality of diodes arranged in a pattern of sections spaced from each other.

12. The processing chamber of claim 11 , wherein the plurality of diodes are coupled to one or more backing plate sections, and the one or more backing plate sections comprise one or more cooling channels.

13. The processing chamber of claim 12, wherein the plurality of diodes are arranged into zones, wherein the zones are configured to heat different areas on the substrate support.

14. The processing chamber of claim 12, wherein the pattern comprises an hourglass architecture, the hourglass architecture including a first portion and a second portion, wherein the first portion and the second portion each include a front boundary and a back boundary, wherein the back boundary is greater than the front boundary.

15. The processing chamber of claim 11 , wherein the heat source module comprises a radiation source oriented to emit radiation towards a reflector, wherein the reflector reflects the radiation towards the substrate support.

16. The processing chamber of claim 15, wherein the reflector comprises a digital micromirror device.

17. A spot heating module comprising:a collimator supported by a holder, the collimator comprising a plurality of optical elements, wherein the plurality of optical elements are configured to be adjusted;a stage supporting the holder; anda support supporting the stage, the support comprising one or more channels extending from an upper surface of the support to a lower surface of the support.

18. The spot heating module of claim 17, wherein the stage movable along a channel formed in the support.

19. The spot heating module of claim 17, further comprising an electromagnetic radiant source directly coupled to the collimator.

20. The spot heating module of claim 17, further comprising an optical fiber coupled to the collimator, the optical fiber configured to be coupled to an electromagnetic radiant source.

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