Radio frequency shielding in semiconductor fabrication apparatuses

Abstract

Disclosed herein are apparatuses and systems for radio frequency (RF) shielding in semiconductor fabrication apparatuses. In one embodiment, an interfacing component for use in coupling electrical power supply filters to a substrate support of a plasma processing system is provided. The interfacing component may comprise at least one insulating shield configured to receive at least one RF rod. The interfacing component may further comprise a first connector at a first end of the at least one insulating shield configured to electrically connect the at least one insulating shield to a first electrical ground below the substrate support. The interfacing component may further comprise a second connector at a second end of the at least one insulating shield configured to electrically connect the at least one insulating shield to a second electrical ground, wherein the second electrical ground is within an electrical filter box.

Description

Docket No. LAM1P044WORADIO FREQUENCY SHIELDING IN SEMICONDUCTOR FABRICATION APPARATUSES INCORPORATION BY REFERENCE

[0001] A PCT Request Form is filed concurrently with this specification as part of the present application. Each application that the present application claims benefit of or priority to as identified in the concurrently filed PCT Request Form is incorporated by reference herein in its entirety and for all purposes.BACKGROUND

[0002] Radio frequency (RF) power may be delivered to semiconductor fabrication apparatus components, e.g., in order to perform plasma-based fabrication operations. The RF signal may cause unwanted effects, e.g., coupling to wires that carry alternating current (AC) signals, and / or parasitic plasma. This may reduce the efficiency of the RF power delivered, and / or may affect substrate fabrication due to parasitic plasma.

[0003] The background description provided herein is for the purposes of generally presenting the context of the disclosure. Work of the presently named inventors, to the extent it is described in this background section, as well as aspects of the description that may not otherwise qualify as prior art at the time of filing, are neither expressly nor impliedly admitted as prior art against the present disclosure.SUMMARY

[0004] According to one embodiment, an interfacing component for use in coupling electrical power supply filters to a substrate support of a plasma processing system is provided. The interfacing component may comprise: at least one insulating shield configured to receive at least one radio frequency (RF) rod, wherein the at least one RF rod is coupled to the substrate support and to an RF source to provide RF power to the substrate support; a first connector at a first end of the at least one insulating shield configured to electrically connect the at least one insulating shield to a first electrical ground below the substrate support; and a second connector at a second end of the at least one insulating shield configured to electrically connect the at least one insulating shield to a second electrical ground, wherein the second electrical ground is within an electrical filter box.

[0005] In some examples, the at least one insulating shield is configured to receive a plurality of RF rods.

[0006] In some examples, the interfacing components comprises a plurality of insulating shields. In some examples, each insulating shield of the plurality of insulating shields is configured to receive a corresponding RF rod of a corresponding plurality of RF rods.

[0007] In some examples, the at least one insulating shield comprises ceramic insulation configured to surround each RF rod disposed in the at least one insulating shield.

[0008] In some examples, the interfacing component is configured to receive one or more wires configured to convey an alternating current (AC) signal to the substrate support in a portion of the interfacing component outside of the at least one insulating shield. In some examples, the one or more wires have a controlled geometry within the interfacing component.

[0009] In some examples, the second connector comprises an RF gasket. In some examples, the RF gasket comprises a canted spring.

[0010] According to some embodiments, a plasma processing system is provided. The plasma processing system may comprise: a substrate support configured to hold a wafer undergoing processing; at least one radio frequency (RF) rod coupled to the substrate support and to an RF source to provide RF power to the substrate support; and an interfacing component for use in coupling electrical power supply filters to the substrate support of a plasma processing system. The interfacing component may comprise: at least one insulating shield configured to receive at least one radio frequency (RF) rod, wherein the at least one RF rod is coupled to the substrate support and to an RF source to provide RF power to the substrate support; a first connector at a first end of the at least one insulating shield configured to electrically connect the at least one insulating shield to a first electrical ground below the substrate support; and a second connector at a second end of the at least one insulating shield configured to electrically connect the at least one insulating shield to a second electrical ground, wherein the second electrical ground is within an electrical filter box.

[0011] In some examples, the at least one insulating shield is configured to receive a plurality of RF rods.

[0012] In some examples, the interfacing components comprises a plurality of insulating shields. In some examples, each insulating shield of the plurality of insulating shields is configured to receive a corresponding RF rod of a corresponding plurality of RF rods.

[0013] In some examples, the at least one insulating shield comprises ceramic insulation configured to surround each RF rod disposed in the at least one insulating shield.

[0014] In some examples, the interfacing component is configured to receive one or more wires configured to convey an alternating current (AC) signal to the substrate support in a portion of the interfacing component outside of the at least one insulating shield. In some examples, theone or more wires have a controlled geometry within the interfacing component.

[0015] In some examples, the second connector comprises an RF gasket. In some examples, the RF gasket comprises a canted spring.

[0016] Other aspects and advantages of the disclosures herein will become apparent from the following detailed description, taken in conjunction with the accompanying drawings, which illustrate by way of example the principles of the disclosures.BRIEF DESCRIPTION OF THE DRAWINGS

[0017] FIG. 1 is a simplified schematic cross-sectional diagram showing a plasma processing system used for deposition operations, in accordance with one embodiment.

[0018] FIG. 2 is a schematic diagram illustrating delivering of radio frequency (RF) and alternating current (AC) signals in accordance with some embodiments.

[0019] FIGS. 3A-3D illustrate example configurations of an RF shield in accordance with some embodiments.

[0020] FIG. 4 illustrates a portion of an example interfacing component comprising an RF shield in accordance with some embodiments.

[0021] FIG. 5 illustrates a portion of an RF shield and connector in accordance with some embodiments.

[0022] FIGS. 6 A and 6B illustrate example implementations of RF shields in accordance with some embodiments.DETAILED DESCRIPTION

[0023] In the following description, numerous specific details are set forth in order to provide a thorough understanding of the example embodiments. However, it will be apparent to one skilled in the art that the example embodiments may be practiced without some of these specific details. In other instances, process operations and implementation details have not been described in detail, if already well known.

[0024] FIG. 1 is a simplified schematic cross-sectional diagram showing a plasma processing system used for deposition operations, in accordance with one embodiment. The plasma processing system 100 includes a chamber 102 in which a gas distribution showerhead 104, which has a plurality of openings 104a through which process gases can flow, and a substrate support 106 are disposed. The chamber 102 has a processing region 108 that is located between the showerhead 104 and the substrate support 106. For a plasma enhanced chemical vapor deposition (PECVD) process, the substrate support 106 can be a pedestal for supporting asubstrate, e.g., a wafer, during deposition. Heaters 110 are provided in the substrate support 106 to heat the substrate, with each heater being coupled to an alternating current (AC) generator 112. One end portion of radio frequency (RF) input rod 114 is coupled to substrate support 106 to provide RF power to an electrode that forms part of the substrate support, e.g., pedestal. The other end portion of RF input rod 114 is connected to a thermal choke rod 116, which includes an annular cap 116a.

[0025] A radio frequency (RF) strap 118 is also connected to thermal choke rod 116. The RF strap 118 is coupled to impedance matching network 120 via a suitable wire connector. Radio frequency (RF) generator system 122, which includes one or more RF generators, is coupled to impedance matching network 120 via a suitable wire connector. In operation, RF generator system 122 generates an RF signal that is transmitted to an input of impedance matching network 120. The impedance matching network 120 matches the impedance of a load coupled to an output of the matching network with the impedance of a source coupled to an input of the matching network and generates a modified RF signal. The modified RF signal is transmitted from the impedance matching network 120 to the thermal choke rod 116 via the wire connector and the RF strap 118. The modified RF signal (RF current) is then conducted, for the most part, along the outer surface of the thermal choke rod 116 and is transmitted to the RF input rod 114 via the electrical connection created where the thermal choke rod contacts the RF input rod, as will be explained in more detail below with reference to Figures 2, 3 A, and 3B.

[0026] FIG. 2 illustrates a schematic diagram of a portion of a processing station or chamber. As illustrated, the station or chamber may include a pedestal 202. A wafer or substrate undergoing processing may reside on pedestal 202. AC and RF signals may be delivered to pedestal 202. For example, AC signals may be delivered via AC wires 212 and 214. The AC signal may be operatively coupled to AC filters 206 via AC connector 210. RF signals may be delivered via RF rod 216, which may be operatively coupled to RF filters 204 via RF connector 208. RF rod 216 and AC wires 212 and 214 may be disposed within a pedestal stem 201 that connects to pedestal 202.

[0027] Utilizing the implementation illustrated in FIG. 2, RF signal provided by RF rod 216 may be transferred to AC wires 212 and 214, which is undesirable. For example, loss of RF signal to the AC wires may result in a loss of RF power transfer to the pedestal. Moreover, because RF signal may be inconsistently transferred to the AC wires, it may not be possible to accurately and consistently compensate for RF loss. Additionally, lack of shielding of the RF rod may result in parasitic plasma, or plasma that occurs at an undesired locations (e.g., below the pedestal). Moreover, the techniques and apparatuses disclosed herein cause the variabilityof the AC and RF wires to be more consistent (e.g., with reduced variability and / or more repeatable) relative to conventional techniques, which allows, e.g., the effect of loss of RF signal to the AC wires to be more consistently and accurately accounted for and / or compensated for.

[0028] Disclosed herein are examples of RF shielding to shield one or more RF rods configured to deliver an RF signal to a pedestal. An RF shield may shield a single RF rod, or may be configured to shield multiple RF rods. The shield may be insulating. For example, a shield may comprise ceramic insulation to surround a set of RF rods (e.g., two, three, five, etc. rods). Alternatively, a separate shield may be used to surround each RF rod. In some embodiments, an RF shield may be part of an interfacing component. As used herein, an “interfacing component” generally refers to a component that connects hardware (e.g., electrical hardware such as RF and / or AC filters) to a substrate support (e.g., a pedestal). The interfacing component may include, e.g., one or more clamps to attach and / or secure the substrate support. In some implementations, the RF shield may be within the interfacing component. Within the insulating shield, a first connector at a first end of the insulating shield(s) may electrically couple the insulating shield to a first electrical ground. The first electrical ground may be below the substrate support (e.g., the pedestal). The insulating shield may have a second connector at an opposing end which electrically connects the insulating shield(s) to a second electrical ground. The second electrical ground may be within the RF filter box. In some embodiments, within the interfacing component and outside of the one or more RF shields, AC wires may be disposed to convey AC signals to the substrate support, e.g., to power heaters and / or other components. A primary ground shield surrounding the one or more RF rods may have an electrically conductive contact that is continuous.

[0029] FIGS. 3A-3D illustrate example implementations of RF shields in accordance with some embodiments.

[0030] Turning to FIG. 3A, an RF shield 302 surrounds RF rod 216. Note that AC wires 214 and 212 are outside of RF shield 302, thereby shielding AC wires 212 and 214 from the RF signal carried by RF rod 216. Note that RF rod 216 is electrically coupled to RF filters 204, and, RF shield 302 is electrically coupled to an electrical ground within RF filters 204. RF shield 302 is also electrically grounded by clamps 304. Note that RF shield 302 terminates below pedestal 202. Note that in the example shown in FIG. 3A, the AC is split into AC connectors 310a and 310b. Accordingly, the AC wires 212 and 214 may remain on the same side instead of crossing, as shown in FIG. 2. This may allow any coupling between RF rod 216 and AC wires 212 and 214 to be more predictable relative than in the implementationshown in and described above in connection with FIG. 2. Note that RF rod 216, RF shield 302, and AC wires 212 and 214 are disposed within interfacing component 301 which connects pedestal 202 to hardware (e.g., RF filters 204 and AC filters 206).

[0031] FIG. 3B illustrates a similar configuration of RF shield 302. However, unlike what is shown in FIG. 3A, RF rod 216 is electrically coupled to RF connector 208. The RF filter box includes ground separations within it for various power delivery filtering components, such as AC, high frequency (HF) RF, and low frequency (LF) RF. RF shield 302 continues to the filter box with internal walls (not shown), which are also RF shields. Additionally, unlike what is shown in FIG. 3A, AC wires 212 and 214 are not bifurcated such that they remain on the same side without crossing.

[0032] FIG. 3C illustrates a similar configuration of RF shield 302. However, unlike what is shown in FIGS. 3A and 3B, the RF passes through the AC filters 206. Note that RF rod 216 and RF shield 302 are both electrically grounded to the RF filter box. Similarly to what is shown in FIG. 3A, AC wires 212 and 214 are bifurcated so as to not cross within the interfacing component.

[0033] FIG. 3D illustrates a similar configuration as that shown in FIG. 3C in that the RF passes through the AC. Similar to what is shown is FIG. 3C, RF rod 216 and RF shield 302 are both electrically grounded to the RF filter box. However, unlike what is shown in FIG.3C, a different filter box arrangement is utilized, where AC filtering is combined, but AC delivery utilizes extra routing prior to combination.

[0034] FIG. 4 illustrates a cross-sectional view of an example implementation of a portion of an interfacing component in accordance with some embodiments. Note that the substrate support (e.g., pedestal) is not illustrated in FIG. 4. As illustrated, the interfacing component includes RF shield 302. Within the RF shield is disposed RF rod 216. Surrounding RF rod 216 within RF shield 302 is dielectric insulation 402. In some implementations dielectric insulation 402 may comprise ceramic. Grounding clamp 404 may include an RF gasket 403. Note that grounding clamp 404 may be within the RF filter box to allow for grounding to the RF filter box.. As illustrated in FIG. 4, the RF gasket may comprise a canted spring. RF gasket 403 completes the grounding such that the ground path travels through RF gasket 403. In instances in which RF gasket 403 comprises a canted spring, the canted spring may allow for physical compliance because the canted spring may increase flexibility. The canted spring may comprise individual coils that are not radially oriented and instead my have the shape of a tilted helix.

[0035] FIG. 5 illustrates a cross-sectional view of an example implementation of an RF shieldand connector in accordance with some embodiments. As illustrated, FIG. 5 depicts RF shield 502, and a path 501 configured to receive an RF rod (e.g., RF rod 216 of FIG. 2 and / or FIGS.3A-3D). RF mounting component 504 may be used to mount the RF shield within the interfacing component. The exploded view of the portion of RF mounting component 504 illustrates the grooves for RF gaskets 403 used for grounding.

[0036] The RF shield and the adaptor that couples the RF shield to the interfacing component may be made in any suitable manner. For example, each piece may be three-dimensionally printed, machined, etc. In some embodiments, the RF shield may be welded to the adaptor. An RF shield may be made of Nickel, Inconel, Haynes C22, low Si Aluminum, or any suitable material that can be exposed to vacuum and has some conductivity.

[0037] For example, FIG. 6A illustrates an example implementation of an RF shield 302 and an RF mount / adaptor 602. RF shield 302 and RF mount / adaptor 602 may be made as two separate pieces (each of which may be machined, three-dimensionally printed, etc.). RF shield 302 and RF mount / adaptor 602 may be connected via one or more bolts, may be welded together, may be press-fit together, or the like. The two-piece RF shield and RF mount / adaptor assembly may then be disposed within and / or connected within an interfacing component in which AC wires are also disposed. RF mount / adaptor 602 may be bolted to any other suitable interface for the purpose of sealing, grounding, and / or thermal sinking.

[0038] FIG. 6B illustrates RF shield 302. In the example shown in FIG. 6B, RF shield 302 is made as two pieces from sheet metal, (e.g., first half 604 and second half 606). These two halves may be vertically overlapping to form the full RF shield.

[0039] Note that in the examples illustrated and described above, only a single RF rod is depicted. However, in some embodiments, multiple RF rods may be used to provide an RF signal to a substrate holder (e.g., a pedestal). In such embodiments, each RF rod may be disposed in a separate RF shield. Conversely, in other embodiments, multiple RF rods may be disposed within a single RF shield. For example, a single RF shield may be configured to receive two, three, five, etc. RF rods. In instances in which a single RF shield receives multiple RF rods, each RF rod may be insulated separately from one another within the RF shield. Note that an RF shield can be machined, cast, formed, or additively printed.

[0040] Without limitation, example systems may include a plasma etch chamber or module, a deposition chamber or module, a spin-rinse chamber or module, a metal plating chamber or module, a clean chamber or module, a bevel edge etch chamber or module, a physical vapor deposition (PVD) chamber or module, a chemical vapor deposition (CVD) chamber or module, an atomic layer deposition (ALD) chamber or module, an atomic layer etch (ALE) chamber ormodule, an ion implantation chamber or module, a track chamber or module, and any other semiconductor processing systems that may be associated or used in the fabrication and / or manufacturing of semiconductor wafers.

[0041] As noted above, depending on the process step or steps to be performed by the tool, the controller might communicate with one or more of other tool circuits or modules, other tool components, cluster tools, other tool interfaces, adjacent tools, neighboring tools, tools located throughout a factory, a main computer, another controller, or tools used in material transport that bring containers of wafers to and from tool locations and / or load ports in a semiconductor manufacturing factory.

[0042] With the above embodiments in mind, it should be understood that the embodiments can employ various computer-implemented operations involving data stored in computer systems. These operations are those requiring physical manipulation of physical quantities. Any of the operations described herein that form part of the embodiments are useful machine operations. The embodiments also relates to a device or an apparatus for performing these operations. The apparatus may be specially constructed for the required purpose, such as a special purpose computer. When defined as a special purpose computer, the computer can also perform other processing, program execution or routines that are not part of the special purpose, while still being capable of operating for the special purpose. Alternatively, the operations may be processed by a general purpose computer selectively activated or configured by one or more computer programs stored in the computer memory, cache, or obtained over a network. When data is obtained over a network the data may be processed by other computers on the network, e.g., a cloud of computing resources.

[0043] One or more embodiments can also be fabricated as computer readable code on a computer readable medium. The computer readable medium is any data storage device that can store data, which can be thereafter be read by a computer system. Examples of the computer readable medium include hard drives, network attached storage (NAS), read-only memory, random-access memory, CD-ROMs, CD-Rs, CD-RWs, magnetic tapes and other optical and non-optical data storage devices. The computer readable medium can include computer readable tangible medium distributed over a network-coupled computer system so that the computer readable code is stored and executed in a distributed fashion.

[0044] Although the method operations were described in a specific order, it should be understood that other housekeeping operations may be performed in between operations, or operations may be adjusted so that they occur at slightly different times, or may be distributed in a system which allows the occurrence of the processing operations at various intervalsassociated with the processing, as long as the processing of the overlay operations are performed in the desired way.

[0045] Example Embodiments:

[0046] Embodiment 1 : An interfacing component for use in coupling electrical power supply filters to a substrate support of a plasma processing system, comprising: at least one insulating shield configured to receive at least one radio frequency (RF) rod, wherein the at least one RF rod is coupled to the substrate support and to an RF source to provide RF power to the substrate support; a first connector at a first end of the at least one insulating shield configured to electrically connect the at least one insulating shield to a first electrical ground below the substrate support; and a second connector at a second end of the at least one insulating shield configured to electrically connect the at least one insulating shield to a second electrical ground, wherein the second electrical ground is within an electrical filter box.

[0047] Embodiment 2: The interfacing component of embodiment 1, wherein the at least one insulating shield is configured to receive a plurality of RF rods.

[0048] Embodiment 3: The interfacing component of any one of embodiments 1-2, wherein the interfacing component comprises a plurality of insulating shields.

[0049] Embodiment 4: The interfacing component of embodiment 3, wherein each insulating shield of the plurality of insulating shields is configured to receive a corresponding RF rod of a corresponding plurality of RF rods.

[0050] Embodiment 5: The interfacing component of any one of embodiments 1-4, wherein the at least one insulating shield comprises ceramic insulation configured to surround each RF rod disposed in the at least one insulating shield.

[0051] Embodiment 6: The interfacing component of any one of embodiments 1-5, wherein the interfacing component is configured to receive one or more wires configured to convey an alternating current (AC) signal to the substrate support in a portion of the interfacing component outside of the at least one insulating shield.

[0052] Embodiment 7: The interfacing component of embodiment 6, wherein the one or more wires have a controlled geometry within the interfacing component.

[0053] Embodiment 8: The interfacing component of any one of embodiments 1-7, wherein the second connector comprises an RF gasket.

[0054] Embodiment 9: The interfacing component of embodiment 8, wherein the RF gasket comprises a canted spring.

[0055] Embodiment 10: A plasma processing system, comprising: a substrate support configured to hold a wafer undergoing processing; at least one radio frequency (RF) rodcoupled to the substrate support and to an RF source to provide RF power to the substrate support; and an interfacing component for use in coupling electrical power supply filters to the substrate support of a plasma processing system, comprising: at least one insulating shield configured to receive at least one radio frequency (RF) rod, wherein the at least one RF rod is coupled to the substrate support and to an RF source to provide RF power to the substrate support; a first connector at a first end of the at least one insulating shield configured to electrically connect the at least one insulating shield to a first electrical ground below the substrate support; and a second connector at a second end of the at least one insulating shield configured to electrically connect the at least one insulating shield to a second electrical ground, wherein the second electrical ground is within an electrical filter box.

[0056] Embodiment 11: The plasma processing system of embodiment 10, wherein the at least one insulating shield is configured to receive a plurality of RF rods.

[0057] Embodiment 12: The plasma processing system of any one of embodiments 10-11, wherein the interfacing components comprises a plurality of insulating shields.

[0058] Embodiment 13: The plasma processing system of embodiment 12, wherein each insulating shield of the plurality of insulating shields is configured to receive a corresponding RF rod of a corresponding plurality of RF rods.

[0059] Embodiment 14: The plasma processing system of any one of embodiments 10-13, wherein the at least one insulating shield comprises ceramic insulation configured to surround each RF rod disposed in the at least one insulating shield.

[0060] Embodiment 15: The plasma processing system of any one of embodiments 10-14, wherein the interfacing component is configured to receive one or more wires configured to convey an alternating current (AC) signal to the substrate support in a portion of the interfacing component outside of the at least one insulating shield.

[0061] Embodiment 16: The plasma processing system of embodiment 15, wherein the one or more wires have a controlled geometry within the interfacing component.

[0062] Embodiment 17: The plasma processing system of any one of embodiments 10-16, wherein the second connector comprises an RF gasket.

[0063] Embodiment 18: The plasma processing system of embodiment 17, wherein the RF gasket comprises a canted spring.

[0064] Accordingly, the disclosure of the example embodiments is intended to be illustrative, but not limiting, of the scope of the disclosures, which are set forth in the following claims and their equivalents. Although example embodiments of the disclosures have been described in some detail for purposes of clarity of understanding, it will be apparent that certain changesand modifications can be practiced within the scope of the following claims. In the following claims, elements and / or steps do not imply any particular order of operation, unless explicitly stated in the claims or implicitly required by the disclosure.

Claims

CLAIMSWhat is claimed is:

1. An interfacing component for use in coupling electrical power supply filters to a substrate support of a plasma processing system, comprising:at least one insulating shield configured to receive at least one radio frequency (RF) rod, wherein the at least one RF rod is coupled to the substrate support and to an RF source to provide RF power to the substrate support;a first connector at a first end of the at least one insulating shield configured to electrically connect the at least one insulating shield to a first electrical ground below the substrate support; anda second connector at a second end of the at least one insulating shield configured to electrically connect the at least one insulating shield to a second electrical ground, wherein the second electrical ground is within an electrical filter box.

2. The interfacing component of claim 1, wherein the at least one insulating shield is configured to receive a plurality of RF rods.

3. The interfacing component of claim 1, wherein the interfacing component comprises a plurality of insulating shields.

4. The interfacing component of claim 3, wherein each insulating shield of the plurality of insulating shields is configured to receive a corresponding RF rod of a corresponding plurality of RF rods.

5. The interfacing component of claim 1, wherein the at least one insulating shield comprises ceramic insulation configured to surround each RF rod disposed in the at least one insulating shield.

6. The interfacing component of claim 1, wherein the interfacing component is configured to receive one or more wires configured to convey an alternating current (AC) signal to the substrate support in a portion of the interfacing component outside of the at least one insulating shield.

7. The interfacing component of claim 6, wherein the one or more wires have a controlled geometry within the interfacing component.

8. The interfacing component of claim 1, wherein the second connector comprises an RF gasket.

9. The interfacing component of claim 8, wherein the RF gasket comprises a canted spring.

10. A plasma processing system, comprising:a substrate support configured to hold a wafer undergoing processing;at least one radio frequency (RF) rod coupled to the substrate support and to an RF source to provide RF power to the substrate support; andan interfacing component for use in coupling electrical power supply filters to the substrate support of a plasma processing system, comprising:at least one insulating shield configured to receive at least one radio frequency (RF) rod, wherein the at least one RF rod is coupled to the substrate support and to an RF source to provide RF power to the substrate support;a first connector at a first end of the at least one insulating shield configured to electrically connect the at least one insulating shield to a first electrical ground below the substrate support; anda second connector at a second end of the at least one insulating shield configured to electrically connect the at least one insulating shield to a second electrical ground, wherein the second electrical ground is within an electrical filter box.

11. The plasma processing system of claim 10, wherein the at least one insulating shield is configured to receive a plurality of RF rods.

12. The plasma processing system of claim 10, wherein the interfacing components comprises a plurality of insulating shields.

13. The plasma processing system of claim 12, wherein each insulating shield of the plurality of insulating shields is configured to receive a corresponding RF rod of a corresponding plurality of RF rods.

14. The plasma processing system of claim 10, wherein the at least one insulating shield comprises ceramic insulation configured to surround each RF rod disposed in the at least one insulating shield.

15. The plasma processing system of claim 10, wherein the interfacing component is configured to receive one or more wires configured to convey an alternating current (AC) signal to the substrate support in a portion of the interfacing component outside of the at least one insulating shield.

16. The plasma processing system of claim 15, wherein the one or more wires have a controlled geometry within the interfacing component.

17. The plasma processing system of claim 10, wherein the second connector comprises an RF gasket.

18. The plasma processing system of claim 17, wherein the RF gasket comprises a canted spring.

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