Area-selective deposition using carbon as an inhibitor

Abstract

Examples are disclosed that relate to performing area-selective deposition of a film using carbon as a geometrically-selective inhibitor. One example provides a method of depositing a film. The method comprises exposing a substrate to a carbon-containing precursor under conditions configured to result in geometrically-selective carbon deposition on the substrate, thereby forming a carbon film on selected regions of the substrate. The method further comprises exposing the substrate to one or more film precursors to deposit a film of a target material on the substrate not covered by the carbon film. The method further comprises removing the carbon film.

Description

Docket No. LRC25318PPCTAREA-SELECTIVE DEPOSITION USING CARBON AS AN INHIBITORBACKGROUND

[0001] Electronic device fabrication processes can involve many steps of material deposition, patterning, and removal to form integrated circuits on substrates. Various methods can be used to deposit films of materials onto a substrate. As one example, chemical vapor deposition (CVD) can be used to deposit a film by exposing a substrate to a flow of gas phase precursors. The gas phase precursors undergo chemical reactions to form a film on a substrate. Plasma-enhanced CVD (PECVD) utilizes a plasma to provide energy for the chemical conversion of the precursors to the film. PECVD processes can be used to deposit a wide variety of films, including carbon films. As another example, atomic layer deposition (ALD) can be used to deposit a film using one or more deposition cycles by, for each cycle, first adsorbing a layer of a precursor to a substrate, and then converting the precursor to the desired film material. ALD can be used to form highly conformal films on complex substrate topologies.SUMMARY

[0002] This Summary is provided to introduce a selection of concepts in a simplified form that are further described below in the Detailed Description. This Summary is not intended to identify key features or essential features of the claimed subject matter, nor is it intended to be used to limit the scope of the claimed subject matter. Furthermore, the claimed subject matter is not limited to implementations that solve any or all disadvantages noted in any part of this disclosure.

[0003] Examples are disclosed that relate to performing area-selective deposition of a film using carbon as a geometrically-selective inhibitor. One example provides a method of depositing a film. The method comprises exposing a substrate to a carbon-containing precursor under conditions configured to result in geometrically-selective carbon deposition on the substrate, thereby forming a carbon film on selected regions of the substrate. The method further comprises exposing the substrate to one or more film precursors to deposit a film of a target material on the substrate not covered by the carbon film. The method further comprises removing the carbon film.Docket No. LRC25318PPCT

[0004] In some such examples, the method further comprises performing a posttreatment process on the carbon film before exposing the substrate to the one or more film precursors.

[0005] Alternatively or additionally, in some such examples, the post-treatment process comprises exposure of the carbon film to a reducing treatment.

[0006] Alternatively or additionally, in some such examples, the geometrically-selective carbon deposition comprises a plasma-enhanced chemical vapor deposition (PECVD) process.

[0007] Alternatively or additionally, in some such examples, the carbon film is deposited at the bottom of a recessed feature and not on at least a portion of a sidewall of the recessed feature.

[0008] Alternatively or additionally, in some such examples, the carbon film is deposited on a mesa adjacent to the recessed feature.

[0009] Alternatively or additionally, in some such examples, the carbon film is not deposited on a mesa adjacent to the recessed feature.

[0010] Another example provides a method of depositing a film on a substrate, the substrate comprising a carbon surface and a tin oxide surface. The method comprises performing a nitridation treatment on the substrate to nitridate the tin oxide surface, thereby forming a nitridated tin oxide surface. The method further comprises performing a halogenation treatment on the substrate to halogenate the carbon surface, thereby forming a halogenated carbon surface. The method further comprises performing a deposition process to selectively deposit an aluminum oxide film on the nitridated tin oxide surface, wherein the halogenated carbon surface inhibits deposition of the aluminum oxide film on the halogenated carbon surface.

[0011] In some such examples, performing the nitridation treatment comprises forming a plasma using nitrogen (N2).

[0012] Alternatively or additionally, in some such examples, performing the halogenation treatment comprises performing a fluorination treatment to form a fluorinated carbon surface.

[0013] Alternatively or additionally, in some such examples, performing the halogenation treatment comprises forming a plasma one or more of nitrogen trifluoride, fluorine, nitrogen trichloride, chlorine, bromine, iodine, chlorine monofluoride, bromine trifluoride, or iodine pentafluoride.Docket No. LRC25318PPCT

[0014] Alternatively or additionally, in some such examples, performing the deposition process comprises performing atomic layer deposition (ALD) to selectively deposit the aluminum oxide film on the nitridated tin oxide surface.

[0015] Alternatively or additionally, in some such examples, performing the deposition process comprises, in a dose step of an ALD cycle, exposing the substrate to one or more of trialkylaluminum, dialkylaluminum alkoxide, a mixed alkylaluminum alkoxide, an alkylaluminum amidinate, an alkylaluminum guanidinate, an amino alane, a dialkylaminoalane, a coordinated aluminum hydride, or an aluminum N-heterocyclic carbene.

[0016] Alternatively or additionally, in some such examples, performing the nitridation treatment comprises using a temperature within a range of 50 °C to 250 °C.

[0017] Alternatively or additionally, in some such examples, performing the nitridation treatment comprises using a pressure within a range of 0.1 Torr to 20 Torr.

[0018] Alternatively or additionally, in some such examples, the nitridation treatment comprises a duration within a range of 1 to 120 seconds.

[0019] Alternatively or additionally, in some such examples, performing the halogenation treatment comprises using a temperature within a range of 50 °C to 250 °C.

[0020] Alternatively or additionally, in some such examples, performing the halogenation treatment comprises using a pressure within a range of 0.1 Torr to 20 Torr.

[0021] Alternatively or additionally, in some such examples, the halogenation treatment comprises a duration within a range of 1 to 120 seconds.

[0022] Another example provides a method of depositing a film on a substrate, the substrate comprising a carbon surface and a tin oxide surface. The method comprises performing a nitridation treatment on the substrate to nitridate the tin oxide surface, thereby forming a nitridated tin oxide surface. The method further comprises performing a halogenation treatment on the substrate to halogenate the carbon surface, thereby forming a halogenated carbon surface. The method further comprises performing atomic layer deposition (ALD) to selectively deposit a film on the nitridated tin oxide surface, wherein the halogenated carbon surface inhibits deposition of the film on the halogenated carbon surface.

[0023] In some such examples, performing ALD comprises depositing an oxide, a nitride, an oxy carbide, an oxynitride, a metal, or a semimetal.Docket No. LRC25318PPCT

[0024] Alternatively or additionally, in some such examples, performing ALD comprises depositing a film comprising one or more of silicon, aluminum, tungsten, molybdenum, zirconium, niobium, tantalum, hafnium, vanadium, or titanium.BRIEF DESCRIPTION OF THE DRAWINGS

[0025] FIGS. 1A-1C show a schematic depiction of an example area-selective deposition that uses carbon as an inhibitor.

[0026] FIGS. 2A-2D shows a schematic depiction of another example area-selective deposition that uses carbon as an inhibitor.

[0027] FIGS. 3A-3D shows a schematic depiction of another example area-selective deposition that uses carbon as an inhibitor.

[0028] FIG. 4 shows a schematic depiction of a processing tool configured to perform an area-selective deposition of carbon.

[0029] FIG. 5 shows a flow diagram of an example method of halogenating carbon to inhibit deposition on the carbon in an area-selective deposition process.

[0030] FIGS. 6A-6D shows a schematic depiction of an example deposition process that uses fluorinated carbon as an inhibitor to selectively deposit aluminum oxide on tin oxide surfaces.

[0031] FIG. 7 shows a block diagram of an example computing device.DETAILED DESCRIPTION

[0032] Some deposition processes, which can be referred to as area- selective deposition processes, utilize the selective inhibition of portions of a substrate surface based upon substrate surface characteristics. In some area-selective deposition processes, a substrate with different material regions on its surface (e.g. a metal and a dielectric) is exposed to a molecular species that binds to a first surface material (e.g. one of the metal or the dielectric), but not to a second surface (e.g. the other of the metal or dielectric), to form a self-assembled monolayer on the target material. The molecular species that forms the self-assembled monolayer can be referred to as an inhibitor. After exposure to the inhibitor, the substrate is exposed to precursors for deposition of a film. The inhibitor prevents adsorption of the precursors where the inhibitor has bound to the substrate, thereby inhibiting deposition of the film in those areas. This allows the film to be selectively deposited on some substrate areas but not others, without having to use photolithographic patterning methods.Docket No. LRC25318PPCT

[0033] However, area-selective deposition processes that use a self-assembled monolayer approach may have some limitations. For example, because the inhibitor molecules of the self-assembled monolayer are adsorbed to the target surface of the substrate, the inhibitor molecules can desorb beyond an upper temperature limit for the inhibitor / target material system. This can limit the temperature range that can be used to perform an area-selective deposition process. Also, the use of a self-assembled monolayer approach for area-selective deposition can limit the deposition process to non-plasma / thermal processes, as the self-assembled monolayer will be degraded by a plasma. Further, adsorption of an inhibitor to a surface at a bottom of a recessed feature of a substrate (such as a via or a trench) may be marginal. As such, it can be difficult to use a self-assembled monolayer approach to perform area-selective deposition when trying to inhibit surfaces within such recessed features.

[0034] Accordingly, examples are disclosed that relate to the use of a geometrically-selective inhibitor in area-selective deposition. In some examples, a geometrically-selective carbon deposition to form carbon on some surfaces of a substrate but not others. A geometrically-selective carbon deposition process selectively deposits carbon based upon geometric variations such as a substrate surface depth within a feature and / or a substrate surface orientation. Geometrically-selective carbon deposition processes can be tuned to vary the geometric selectivity of the carbon deposition. For example, some geometrically-selective carbon deposition processes can form carbon films at a bottom of recessed features such as trenches or vias, while keeping sidewalls of the recessed features and mesas between the recessed features free of carbon. Other geometrically-selective carbon deposition processes can form carbon films at a bottom of recessed features and on mesas between recessed features, but not on sidewalls of the recessed features. The carbon films thus formed can inhibit adsorption of precursors in a subsequent deposition process (e.g. an ALD process), thereby allowing the subsequent deposition process to selectively form a target film on surfaces free of the carbon film while inhibiting deposition on surfaces with the carbon film. After deposition of the target film, the carbon film can be removed, for example, by oxidation to form volatile carbon oxides, leaving the target film in a pattern on the substrate.

[0035] The use of a geometrically-selective carbon film as an inhibitor according to the disclosed examples can provide various advantages over selfassembled monolayer approaches to area-selective deposition. For example, a carbonDocket No. LRC25318PPCTfilm can be formed with a thickness of greater than a monolayer. This can allow for the deposition of a greater thickness of a target film without redepositing the carbon inhibitor. Further, a thicker carbon film can be used for robustness when a plasma-based deposition is used to deposit the target film. Likewise, a thinner carbon film can be used when the carbon film will not be exposed to plasma treatments. Carbon films also may be more cost-effective than self-assembled monolayer chemistries.

[0036] In some examples, the surface of a carbon film used in area-selective deposition can be chemically modified in a post-treatment process prior to deposition of the target film to enhance the inhibitive effect of the carbon film. Example chemical modification methods can include plasma and non-plasma (e.g. thermal) treatments, such as reducing treatments, halogenating treatments, oxidizing treatments, nitridating treatments, or combinations of two or more of such treatments. As a more specific example, a reducing treatment can be used to remove surface hydroxyls. Such a reducing treatment can be performed, for example, by exposing the carbon film to hydrogen radicals generated using an in-situ plasma or remote plasma, or exposing the carbon film to hydrogen gas while heated. As another example, a halogenating treatment (e.g., fluorinating treatment, chlorinating treatment) can be used to help inhibit deposition of aluminum oxide on carbon. An example area-selective deposition process that includes a halogenating treatment is discussed in more detail below with regard to FIGS. 5-6D.

[0037] FIGS. 1A-1C show schematic depictions of structures formed on a substrate 100 during an area-selective deposition process that utilizes geometrically-selective carbon deposition to deposit a carbon film 102 as an inhibitor onto a bottom of a recessed feature 104, such as a trench. First, FIG. 1A shows the recessed feature 104 before carbon deposition. Next, FIG. IB shows the substrate 100 after an area-selective carbon film 102 has been deposited on a bottom surface of the recessed feature 104. The sidewalls 106 of the recessed feature 104, and mesas 108 outside of the recessed feature 104, are carbon free. In some examples, a carbon film deposition processes can be controlled to form the carbon film 102 without performing any separate carbon etching processes to remove carbon from the mesas. In other examples, one or more carbon deposit! on / etching cycles can be used to form the carbon film 102. Also, a post-treatment process can be performed on the carbon film 102 to chemically modify a surface of the carbon film 102 to enhance the inhibitive properties of the carbon film.Docket No. LRC25318PPCT

[0038] Referring next to FIG. 1C, after performing the geometrically-selective carbon deposition process to form carbon film 102, a target film 110 is deposited on the sidewalls 106 of the recessed feature 104 and on mesas 108. The target film 110 can be any suitable type of film. Examples include oxides, nitrides, oxycarbides, and oxynitrides of various metals and semimetals, including silicon, aluminum, tungsten, molybdenum, zirconium, niobium, tantalum, hafnium, vanadium, and titanium. The target film can be formed, for example, using ALD. In some examples, the target film is formed using thermal ALD, in the absence of a plasma. In other examples, the target film can be formed using plasma-enhanced ALD. As mentioned above, the carbon film may be configured to withstand the plasma conditions in such examples.

[0039] The geometrically-selective carbon deposition can be performed using plasma-enhanced chemical vapor deposition (PECVD) process, in which a plasma is formed while introducing a carbon-containing precursor and one or more etchants into a processing chamber. In some examples, the plasma is a single-frequency plasma, while in other examples, the plasma is a multi -frequency plasma comprising a lower frequency (LF) radiofrequency (RF) power component and a higher frequency (HF) RF power component. The LF RF power component can have a frequency of 1 megahertz (MHz) or below. The HF RF power can have a frequency of greater than 1 MHz. A more specific example of an LF RF frequency is 400 kilohertz (kHz). A more specific example of an HF RF frequency is 13.56 megahertz (MHz).

[0040] The parameters of a geometrically-selective carbon deposition can be controlled to cause a variety of different area-selective deposition patterns and different carbon film characteristics for a given substrate topology. The example deposition processes described below also can yield a geometrically-selective carbon film with a relatively high modulus of elasticity and relatively low stress compared to other carbon films, without employing cyclic deposition and etching steps. Further, control of parameters such as processing chamber pressure and substrate temperature can achieve the geometrically-selective deposition using relatively high plasma power without causing damage to the substrate (e.g. rounding the edges of features of the substrate). For example, relatively lower temperatures and / or pressures within a processing chamber can help reduce substrate damage during processing compared to the use of relatively higher temperatures and / or pressures.

[0041] In some examples, one or more frequency components of the RF power can be pulsed. Alternatively or additionally, in some examples, one or more frequencyDocket No. LRC25318PPCTcomponents of the RF power can be continuous wave. In some such examples, both continuous wave HF RF power and continuous wave LF RF power can be used to form the plasma.

[0042] Geometrically-selective carbon deposition to deposit carbon at the bottom of recessed features can be performed using vertically directional carbon deposition. “Vertically directional carbon deposition” generally refers to deposition conditions that cause carbon film growth rates to be higher on bottom surfaces of recessed features than on sidewalls of recessed features. Vertically directional carbon deposition can be achieved by using deposition conditions such as relatively lower processing chamber pressures, relatively higher plasma powers, and / or LF RF powers. These conditions each can increase an ion flux in a direction normal to a gap bottom compared to other directions.

[0043] The type of etchants and carbon precursor-etchant ratios can be varied to cause deposition of carbon on mesas between recessed features, to avoid depositing carbon on mesas between recessed features, in various examples, and / or to cause other geometrically-selective depositions of carbon. The etchants used in the carbon deposition processes as disclosed can cause higher carbon etching rates in a lateral direction than in a vertical direction during deposition. Thus, the vertically directional carbon deposition helps to deposit carbon at the bottom of recessed features, while the lateral etching caused by the etchant helps to avoid pinching off a gap opening with carbon during the carbon deposition. Further, an LF RF power component can be used in the plasma to cause substrate bombardment with ions formed in the plasma. This can help to densify the carbon film.

[0044] Any suitable carbon-containing precursor can be used in a geometrically-selective carbon deposition. Suitable carbon-containing precursors include carbon-containing molecules that are volatilizable under processing conditions and that can be activated in a plasma to form a carbon film on a substrate. In some examples, the carbon-containing precursor comprises one or more of an alkane having a general formula CnH2n+2 where n is an integer in a range of 1 to 10, an alkene having a general formula CiJLn where n is an integer in a range of 2 to 10, an alkyne having a general formula CnH2n-2 where n is an integer in a range of 2 to 10, an aromatic hydrocarbon, an aliphatic cyclic hydrocarbon, an alkyl amine, a ketone, an aldehyde, an ester, an amide, or an alcohol. More specific examples include acetylene and propylene.Docket No. LRC25318PPCT

[0045] Likewise, any suitable etchant can be used in a geometrically selective carbon deposition process. In some examples, the etchant comprises one or more of hydrogen, ammonia, or hydrazine. In other examples, alternatively or additionally, the etchant can comprise one or more of carbon dioxide (CO2), carbon oxysulfide (COS), nitrogen (N2), or sulfur dioxide (SO2). In further examples, one or more halogencontaining etchants can be used. Example halogen-containing etchants chlorine (Ch), fluorine (F2), bromine (Bn), iodine (I2), hydrofluoric acid (HF), hydrochloric acid (HC1), hydrobromic acid (HBr), hydroiodic acid (HI), nitrogen trifluoride (NF3), boron trifluoride (BF3), sulfur hexafluoride (SFe), a halocarbon gas having a general formula CaXb (where X comprises one or more of fluorine, chlorine, bromine, or iodine and where a = 1-10), a halohydrocarbon gas having a general formula CaHbXc (where X comprises one or more of fluorine, chlorine, bromine, or iodine and where a = 1-10). In yet further examples, one or more other etchants can be used.

[0046] As mentioned above, the ratio of etchant to carbon-containing precursor can be controlled to control the geometrically-selective deposition. In some examples, the carbon-containing precursor is introduced into the processing chamber at a flow rate of 0.1 liters per minute to 3 liters per minute. In other more specific examples, a flow rate of 0.45 liters per minute to 0.70 liters per minute can be used. In other examples, flow rates outside this range may be used. Further, in some examples, the etchant is introduced into the processing chamber at a flow rate of 0.1 liters per minute to 20 liters per minute. In other more specific examples, an etchant flow rate of 5 liters per minute to 15 liters per minute can be used. The use of a higher flow rate of etchant compared to carbon-containing precursor can allow deposition to occur at the bottom of a recessed feature while avoiding depositing carbon in an opening of the feature In other examples, flow rates outside of these ranges can be used.

[0047] In some examples, two or more etchants can be into the processing chamber. Introducing two or more etchants into the processing chamber can help control etch characteristics during deposition, depending upon the ratios of the flow rates of the etchants used.

[0048] Further, in some examples, a flow of an inert gas can be introduced into the processing chamber. Any suitable inert gas can be used. As one example, a flow of helium can be used to provide stability to the plasma. In other examples, other inert gases, such as argon, may be used. Other examples of inert gases that can be used include neon, krypton, and xenon.Docket No. LRC25318PPCT

[0049] As described above, processing parameters, such as plasma powers, processing chemical flow rates, processing chamber pressure, and substrate temperature, can be varied to achieve desired geometrically-selective film characteristics, such as density, modulus of elasticity, stress, and refractive index (RI), without causing excessive substrate damage. For example, when relatively higher plasma powers are used to yield a high-modulus film, risk of damage to the underlying substrate can be mitigated by lowering the processing temperature, increasing the processing pressure, and / or adjusting a carbon-containing precursor / etchant ratio.

[0050] The HF RF power component of the plasma can comprise a power within a range of 0.05 to 2.5 kW per processing station. Where the LF power component is used, the LF RF power component can comprise a power within a range of 0.05 to 2.5 kilowatts (kW) (per processing station in a multi-station processing chamber). In more specific examples, the LF RF power component can comprise a power within a range of 1 to 1.5 kW per processing station, and the HF RF power component alternatively or additionally can comprise a power within a range of 1 to 1.5 kW per processing station. In other examples, powers outside these ranges can be used. As mentioned above, the LF RF power component can be used to help densify the carbon film during deposition. Likewise, the use of relatively higher plasma powers, including relatively higher LF RF power, also can lead to more ion bombardment, than the use of relatively lower plasma powers. The HF RF power and the LF RF power, where used, independently can be pulsed or continuous wave.

[0051] The processing chamber pressure also can be used to control various geometrically-selective carbon film characteristics. For example, relatively lower pressures within the processing chamber increase the mean free path of charged particles from the plasma compared to relatively higher pressures, thereby causing relatively more vertically directional carbon deposition. This can help to deposit carbon within recessed features in a bottom-up manner compared to the use of relatively higher pressures. The use of a relatively lower pressure within the processing chamber during a deposition process which uses relatively higher plasma powers can lead to increases damage to the underlying substrate, relative to the use of a relatively higher pressure, as mentioned above. However, a substrate temperature may be controlled to help mitigate such damage. In some examples, at 416, a pressure within the processing chamber can comprise a pressure within a range of 0.1 to 20 Torr. In more specificDocket No. LRC25318PPCTexamples, a pressure within the processing chamber can comprise a pressure within a range of 2 to 4 Torr.

[0052] A geometrically-selective carbon deposition process can be performed at any suitable substrate temperature. Examples include substrate heater temperatures within a range of 120 to 600 degrees Celsius.

[0053] FIGS. 2A-2D schematically show structures formed in an example area-selective film deposition process that uses carbon as a geometrically-selective inhibitor. Substrate 200 comprises a relatively narrower gap 202, a mesa 204, and a relatively wider gap 206. First, FIG. 2A shows substrate 200 prior to carbon film deposition (tO). Next, FIG. 2B shows substrate 200 after a period of exposure to a multifrequency plasma comprising a carbon-containing precursor and an etchant. In this example, the plasma can comprises a continuous wave LF component and a continuous wave HF component. A carbon film 208 is deposited on surfaces of substrate 200, such as on mesa 204, and also within relatively narrower gap 202 and relatively wider gap 206. However, the carbon film 208 is not deposited substantially on the sidewalls of relatively narrower gap 202 and relatively wider gap 206. As described above, the deposition conditions can provide for a relatively higher rate of lateral etching of the carbon film compared to a rate of vertical etching. Likewise, the deposition conditions provide for a vertically directional carbon deposition. As a result, the carbon film 208 grows within relatively narrower gap 202 and relatively wider gap 206 in a bottom-up manner while avoiding depositing on sidewalls of the relatively narrower gap 202 and the relatively wider gap 206.

[0054] In some examples, a post-treatment process can be performed on the carbon film 208 to chemically modify a surface of the carbon film 208. Example chemical modification methods can include plasma and non-plasma (e.g. thermal) treatments, such as reducing treatments, halogenating treatments, oxidizing treatments, nitridating treatments, or combinations of two or more of such treatments. As a more specific example, a reducing treatment can be used to remove surface hydroxyls. Such a reducing treatment can be performed, for example, by exposing the carbon film to hydrogen radicals generated using an in-situ plasma or remote plasma, or exposing the carbon film to hydrogen gas while heated.

[0055] Continuing, FIG. 2C shows substrate 200 after growth of a target film 210 on substrate 200. Due to the inhibiting effect of the carbon film 208, the target film is deposited on the sidewalls of the relatively narrower gap 202 and the relatively widerDocket No. LRC25318PPCTgap 206, but not on mesa 204. FIG. 2D shows substrate 200 after removal of the carbon film 208. Carbon film 208 can be removed by an oxidative process to form volatile carbon oxides from the carbon film, or by a reductive process to form volatile hydrocarbons from the carbon film. In either case, the target film 210 remains on the surface of substrate 200 in a desired pattern.

[0056] FIGS. 2A-2D illustrate the formation of a geometrically-selective carbon film on mesas and at bottoms of recessed features, but not on sidewalls of the recessed features. By modifying one or more carbon film deposition parameters, the geometrically-selective carbon film can be deposited on the bottoms of recessed features, but not on mesas or sidewalls. FIGS. 3A-3D show an example of such a process on a substrate 300. Substrate 300 comprises a relatively narrower recessed feature 306, a mesa 304 adjacent to the relatively narrower recessed feature 306, and a relatively wider recessed feature 308. First, FIG. 3 A shows substrate 300 prior to carbon film deposition. Next, FIG. 3B shows substrate 300 after a geometrically-selective carbon deposition process that forms a carbon film 302. The carbon film 302 is deposited to a partial height within relatively narrower recessed feature 306 and relatively wider recessed feature 308. However, the carbon film 302 is not deposited substantially on the sidewalls of relatively narrower recessed feature 306, the sidewalls of the relatively wider recessed feature 308, or on mesa 304. The carbon film 302 can be formed using, for example, a multifrequency plasma comprising a carbon-containing precursor and an etchant, wherein the plasma comprises a continuous wave LF RF power component and a continuous wave HF RF power component. Other process conditions also may be used to form the carbon film 302. As described above, the deposition conditions can cause a relatively higher rate of lateral etching of the carbon film compared to a rate of vertical etching. As a more specific example, a relatively higher flow of one or more etchants can be used to avoid net carbon film growth on mesa 304 compared to the flow of etchant(s) used in the example of FIGS. 2A-2D. Likewise, the deposition conditions provide for vertically directional carbon deposition. As a result, carbon film 302 grows within relatively narrower gap 306 and relatively wider gap 308 in a bottom-up manner, but does not form net deposition on sidewalls of relatively narrower gap 306 and relatively wider gap 308, or on mesa 304.

[0057] In some examples, a post-treatment process can be performed on the carbon film 302 to chemically modify a surface of the carbon film 302. Example chemical modification methods can include plasma and non-plasma (e.g. thermal)Docket No. LRC25318PPCTtreatments, such as reducing treatments, halogenating treatments, oxidizing treatments, nitridating treatments, or combinations of two or more of such treatments. As a more specific example, a reducing treatment can be used to remove surface hydroxyls. Such a reducing treatment can be performed, for example, by exposing the carbon film to hydrogen radicals generated using an in-situ plasma or remote plasma, or exposing the carbon film to hydrogen gas while heated.

[0058] Continuing, FIG. 3C shows substrate 300 after growth of a target film 310 on substrate 300. Due to the inhibiting effect of the carbon film 302, the target film is deposited on the sidewalls of the relatively narrower gap 306 and the relatively wider gap 308, but not on mesa 304. FIG. 3D shows substrate 300 after removal of the carbon film 302. Carbon film 302 can be removed by an oxidative process to form volatile carbon oxides from the carbon film, or by a reductive process to form volatile hydrocarbons from the carbon film. In either case, the target film 310 remains on the surface of substrate 300 in a desired pattern.

[0059] FIG. 4 schematically shows an example processing tool 400 configured to perform PECVD of a carbon film according to the present disclosure. Processing tool 400 comprises a processing chamber 402 and a substrate holder 404 within the processing chamber 402. The substrate holder 404 is configured to support a substrate 406 disposed within processing chamber 402. Substrate holder 404 comprises a substrate heater 408. In other examples, a heater can be omitted, or can be located elsewhere within processing chamber 402. Processing tool 400 further comprises a showerhead 410 for introducing processing chemicals into the processing chamber. A gap 412 exists between showerhead 410 and substrate 406. In some examples, the substrate holder can be moveable in a vertical direction (with reference to the orientation shown in FIG. 8). In such examples, a width of a gap 412 can be controlled by moving substrate holder 404 up or down, as described above. In some examples, a curtain gas may be introduced through processing chemical outlet 409 positioned at least partially around the outside perimeter of showerhead 410.

[0060] Processing tool 400 further comprises flow control hardware 414. The flow control hardware 414 connects processing chemical sources to the processing chamber. Flow control hardware 414 connects a carbon-containing precursor source 416, an etchant source 418, and an inert gas source 420 to the processing chamber 402. Flow control hardware 414 can include any suitable components. For example, flow control hardware 414 can comprise one or more valves controllable to place a selectedDocket No. LRC25318PPCTgas source or selected gas sources in fluid connection with showerhead 410. Flow control hardware 414 can also control one or more mass flow controllers or other controllers for controlling a mass flow rate of gas.

[0061] The carbon-containing precursor source 416 comprises any suitable precursor compounds for forming a carbon film. Examples of carbon-containing precursors include alkanes having a general formula CnH2n+2 where n is an integer in a range of 1 to 10, alkenes having a general formula CnEkn where n is an integer in a range of 2 to 10, alkynes having a general formula CnH2n-2 where n is an integer in a range of 2 to 10, as well as various aromatic hydrocarbons, aliphatic cyclic hydrocarbons, alkyl amines, ketones, aldehydes, ethers, esters, amides, alcohols, and other carbon-containing molecules that can be volatilized under process conditions.

[0062] The etchant source 418 comprises any suitable substance or substances that can etch an amorphous carbon film during film deposition. Examples of etchants include one or more of hydrogen (Ek), ammonia (NH3), or hydrazine (N2H2), nitrogen (N2), carbon monoxide (CO), carbon dioxide (CO2), carbon oxysulfide (COS), sulfur dioxide (SO2), chlorine (Ch), fluorine (F2), bromine (Bn), iodine (I2), hydrofluoric acid (HF), hydrochloric acid (HC1), hydrobromic acid (HBr), hydroiodic acid (HI), nitrogen trifluoride (NF3), boron trifluoride (BF3), sulfur hexafluoride (SFe), a halocarbon gas having a general formula CaXb (where X comprises one or more of fluorine, chlorine, bromine, or iodine and where a = 1-10), or a halohydrocarbon gas having a general formula CaHbXc (where X comprises one or more of fluorine, chlorine, bromine, or iodine and where a = 1-10). The inert gas source 420 comprises any suitable inert gas. Examples include argon, helium, neon, krypton, and xenon.

[0063] Processing tool 400 further comprises an exhaust system 422. Exhaust system 422 is configured to exhaust gases from the processing chamber 402. Exhaust system 422 can comprise any suitable hardware, including one or more low vacuum pumps, one or more high vacuum pumps, and one or more valves for controlling an exhaust flow. Together, flow control hardware 414 and exhaust system 422 can be operated to achieve a selected pressure in processing chamber 402 during substrate processing. Example pressures include pressures within a range of 0.1 Torr to 20 Torr. Further, exhaust system 422 can be operated to purge processing chamber 402.

[0064] Processing tool 400 further comprises an RF power source 424. RF power source 424 can supply RF power to the showerhead electrode or substrate holder electrode in various examples. As shown in FIG. 4, the RF power is provided toDocket No. LRC25318PPCTsubstrate holder 404, and showerhead 410 is configured as a grounded opposing electrode. In other examples, the RF power source 424 can supply RF power to showerhead 410, and substrate holder 404 can be grounded. In the depicted example, a capacitively coupled plasma can be formed in processing chamber 402 in a gap between showerhead 410 and substrate holder 404. In other examples, an inductively coupled plasma can be used. The processing tool 400 further includes a matching network 426 for impedance matching of the power source 424. In further examples, a remote plasma source (not shown) can be used to generate radical chemical species at a location remote from substrate 406.

[0065] In some examples, the RF power source 424 is configured to provide RF power comprising a lower-frequency (LF) RF power 428A and a higher-frequency (HF) RF power 428B to form a multi -frequency plasma. Example frequencies for the LF RF power comprise frequencies of 1 megahertz (MHz) or less. Example frequencies for the HF RF power comprise frequencies of greater than 1 MHz. In other examples, RF power source 424 is configured to supply a single frequency RF power. In yet further examples, a processing tool may have a microwave plasma source.

[0066] Processing tool 400 further comprises a controller 430 configured to control operation of processing tool 400. Controller 430 is operatively coupled to substrate heater 408, substrate holder 404, flow control hardware 414, exhaust system 422, and RF power source 424. Controller 430 is configured to control various functions of processing tool 400 to perform PECVD of amorphous carbon films. Controller 430 can comprise any suitable computing system.

[0067] Processing tool 400 can further comprise precursor sources for depositing a target film in an area-selective, as disclosed here. Example precursor sources includes sources for the example target films listed above.

[0068] In further examples, it may be advantageous to use an area-selective film deposition process to deposit a protective film. For example, reducing environments formed during processing of some substrate surfaces (e.g., deposition processes using H2 plasma) can cause damage to tin oxide (SnCh). For example, reducing environments can convert SnCh to Sn, which may melt due to a relatively lower melting point than tin oxide. As such, a protective film of aluminum oxide can be deposited to help avoid damage to tin oxide during reducing treatments on carbon surfaces. However, it can be challenging to selectively deposit aluminum oxide on tin oxide and not on other substrate surfaces, such as carbon surfaces.Docket No. LRC25318PPCT

[0069] Accordingly, examples are also disclosed that relate to use of nitridating and halogenating treatments to facilitate area-selective deposition of aluminum oxide films. Briefly, a substrate can comprise a patterned layer of tin oxide formed on a carbon film in extreme ultraviolet (EUV) photolithography applications. A nitridating treatment is performed to nitridate the tin oxide and thereby form a nitridated tin oxide surface. Further, a halogenating treatment is performed to halogenate the carbon and thereby form a halogenated carbon surface. Next, a deposition process is performed to deposit a film on the tin oxide. The nitridation treatment allows nitridated tin oxide to serve as a nucleation site for growth of the film. This helps to provide for faster film growth compared to an untreated tin oxide surface. Further, the halogenation treatment inhibits film growth on the halogenated carbon surface. As a result, the film is selectively deposited on tin oxide. The film can help protect tin oxide from substrate processing, such as reducing plasmas used in EUV applications. Examples of films that can be deposited on tin oxide include various oxides, nitrides, oxy carbides, oxynitrides, metals, and semimetals. More particular examples include films of aluminum oxide, silicon oxide, aluminum nitride, silicon nitride, silicon oxycarbide, silicon oxynitride, silicon, aluminum, tungsten, molybdenum, zirconium, niobium, tantalum, hafnium, vanadium and titanium.

[0070] Any suitable nitridation treatment can be performed. In some examples, a plasma can be formed using nitrogen (N2). Further, any suitable halogenation treatment can be performed. In some examples, a plasma can be formed using nitrogen trifluoride (NF3) to fluoridate a carbon surface. Further examples of processing chemicals that can be used to halogenate a carbon surface include fluorine (F2), chlorine (Ch), nitrogen trichloride (NCI3), bromine (Bn), iodine (I2), and interhalogen compounds (e.g., C1F, BrFs, or IFs). In some examples, an in-situ plasma, such as a capacitively coupled plasma (CCP), can be formed in a processing chamber to perform the nitridation and / or halogenation processes. In further examples, a remote plasma, such as an inductively coupled plasma (ICP), a CCP, or a microwave plasma, can be used.

[0071] FIG. 5 shows a flow diagram of an example method 500 for performing an area-selective deposition process to deposit a protective film on a tin oxide surface. At 502, method 500 comprises performing a nitridation treatment on a substrate to nitridate a tin oxide surface. In some examples, at 504, the nitridation treatmentDocket No. LRC25318PPCTcomprises forming a plasma using N2. In other examples, any other suitable nitridation treatment can be performed.

[0072] Nitridation can be performed using any suitable processing conditions. Examples include temperatures of 50 to 250 °C and pressures of 0.1 to 20 Torr. Further, the nitridation step can be performed for any suitable duration, such as a duration of 1 to 120 seconds. In other examples, values outside these ranges can be used. In some examples, the use of a relatively longer nitridation step (e.g., a duration of 30 to 60 seconds) can help provide relatively faster aluminum oxide film growth compared to the use of a relatively shorter nitridation step (e.g., a duration of 1 to 30 seconds).

[0073] FIGS. 6A-6D schematically shows example structures formed using method 500. As shown in FIG. 6A, substrate 600 comprises a layer of carbon 602. Substrate 600 further comprises a patterned layer of tin oxide 604 formed on top of the layer of carbon 602. The patterned layer of tin oxide may represent a dry resist layer of an EUV photoresist, in some examples.

[0074] Next, FIG. 6B shows substrate 600 following a nitridation step 502. As a result, tin oxide 604 is nitridated to form nitridated tin oxide 604A. In the depicted example, a N2 plasma 606 is used to nitridate the tin oxide 604. As mentioned above, the nitridated surface can provide a nucleation site for relatively faster growth of a protective film (e.g., aluminum oxide) compared to the untreated tin oxide surface.

[0075] Returning to FIG. 5, method 500 further comprises, at 510, performing a halogenation treatment on a substrate to halogenate the carbon surface of the substrate. In some examples, at 512, the halogenation step comprises fluorinating the carbon surface. In some such examples, a plasma can be formed using one or more fluorine-containing precursors. Example fluorine-containing precursors include F2 and NF3. In other examples, halogenation can be performed using one or more of Ch, NCI3, Bn, I2, C1F, BrFs, or IFs. Halogenation can be performed using any suitable processing conditions, such as those listed above at nitridation step 502. Examples include temperatures of 50 to 250 °C and pressures of 0.1 to 20 Torr. Further, the halogenation step can be performed for any suitable duration, such as a duration of 1 to 120 seconds. In other examples, values outside these ranges can be used. While the halogenation step can halogenate the carbon surface, the halogenation process has relatively less effect (or no effect) on the nitridated tin oxide surface. As such, the halogenation step at 510 can selectively halogenate carbon.Docket No. LRC25318PPCT

[0076] FIG. 6C shows substrate 600 following a halogenation step at 510. In the depicted example, a NF3 plasma 608 is used to selectively fluorinate a surface of the layer of carbon 602 to form a fluorinated carbon surface 602A. As mentioned above, the fluorinated carbon surface 602A can inhibit growth of films, such as aluminum oxide films. In contrast, film growth on nitridated tin oxide 604A is not affected by NF3 plasma 608.

[0077] Returning once more to FIG. 5, method 500 further comprises, at 520, depositing a film on the nitridated tin oxide using ALD. The ALD process comprises one or more ALD cycles. Each ALD cycle comprises, at 522, performing a dose step by exposing the substrate to a film precursor. After an optional purge step, the ALD cycle further comprises, at 524, performing a conversion step to form a film on the tin oxide surface. The conversion step at 524 can comprise exposing the substrate to a reactant (e.g., O2) that can react with adsorbed precursor to form a film. In various examples, heat (thermal ALD (TALD)) or plasma energy (plasma-enhanced ALD (PEALD)) can be used to facilitate conversion of the aluminum-containing precursor to a film. The ALD cycle can optionally comprise another purge step after the conversion step at 524. As mentioned above, the nitridated tin oxide surface serves as a nucleation site for growth of the film. Due to the fluorinated carbon surface, film growth is inhibited on the carbon surfaces.

[0078] The ALD process can employ any suitable film precursor(s). As discussed above, examples of films that can be deposited on tin oxide include various oxides, nitrides, oxycarbides, oxynitrides, metals, and semimetals. More particular examples include films of aluminum oxide, silicon oxide, aluminum nitride, silicon nitride, silicon oxycarbide, silicon oxynitride, silicon, aluminum, tungsten, molybdenum, zirconium, niobium, tantalum, hafnium, vanadium and titanium.

[0079] Examples of aluminum-containing precursors for forming aluminum-containing films include trialkylaluminum, dialkylaluminum alkoxide, and other mixed alkylaluminum alkoxides (e.g., RxAl(OR)ywhere x + y = 3), where each alkyl may independently be methyl, ethyl, propyl, isopropyl, butyl, isobutyl, or / -butyl, and alkoxide may be methoxide, ethoxide, w-propoxide, isopropoxide, ec-butoxide, n-butoxide, or / -butoxide. Further examples of aluminum-containing precursors include alkylaluminum amidinates, alkylaluminum guanidinates, amino alanes, and dialkylaminoalanes (e.g., dimethylethylamine alane, triethylamine alane, N-Docket No. LRC25318PPCTmethylpyrrolidine alane). Example of alkylaluminum amidinates include materials having the general structure of formula (IV):< <where each R' and R" is independently a methyl, ethyl, or dimethylamino group.

[0080] Further examples of aluminum-containing precursors include coordinated Al hydrides. Further examples of aluminum-containing precursors include materials having a general formula of L(AlH2)n, where L is a monoanionic, nitrogencontaining, multidentate ligand that is N-based and / or O-based. An “N-based ligand” generally represents a ligand that coordinates to a metal atom via a nitrogen atom of the ligand. Similarly, an “O-based ligand” generally represents a ligand that coordinates to a metal atom via an oxygen atom of the ligand. Further examples of aluminum-containing precursors include aluminum N-heterocyclic carbenes (Al NHCs), such as N'-( / -butyl)-N,N-dimethyl-ethylenediamine aluminum hydride.

[0081] Examples of silicon-containing precursors for forming silicon-containing films include silanes (SinH2n+2 where n >1), such as silane, disilane, trisilane, and tetrasilane. In some examples, the silicon-containing precursor can be an aminosilane, such asbis(diethylamino)silane, di(isopropylamino)silane (DIPAS), bis(t-butylamino) silane (BTBAS), (di-sec-butylamino)silane, andtris(dimethylamino)silane (3DMAS). Aminosilane precursors include the following: Hx-Si-(NR)y, where x = 1-3, x+y = 4, and R is a substituted or unsubstituted alkyl, alkenyl, alkynyl or aromatic group or hydride group. Further examples of silicon-containing precursors include halosilanes, alkoxysilanes, siloxanes, and organosilicon compounds.

[0082] Examples of tungsten-containing precursors for forming tungsten-containing films include tungsten hexafluoride (WFe), tungsten hexachloride (WCk), bis(tert-butylimino)bis(dimethylamino) tungsten (C12H30N4W), and tungsten hexacarbonyl (W(CO)e).

[0083] Examples of molybdenum-containing precursors for forming molybdenum-containing films include bis(tert-butylimino)bis(dimethylamino) molybdenum (C12H30M0N4), molybdenum pentachloride (M0CI5), molybdenumDocket No. LRC25318PPCTdioxide dichloride (MOO2CI2), molybdenum oxytetrachloride (MoOCh), and molybdenum hexacarbonyl (Mo(CO)e).

[0084] Examples of zirconium-containing precursors for forming zirconium-containing films include tetrakis(dimethylamido) zirconium(IV) ((NMe2)4Zr), tetrakis(ethylmethylamido) zirconium(IV) (((NEtMe)4Zr), and tetrakis(di ethyl ami do) zirconium(IV) ((NEt2)4Zr), where Et represents an ethyl group (C2H5) and Me represents a methyl group (CH3).

[0085] Examples of niobium-containing precursors for forming niobium-containing films include niobium pentachloride (NbCE) and niobium (V) ethoxide.

[0086] Examples of tantalum-containing precursors for forming tantalum-containing films include tantalum pentafluoride (NbFs), tantalum pentachloride (NbCh), tantalum (V) diethylamide, and tantalum (V) ethoxide.

[0087] Examples of hafnium-containing precursors for forming hafnium-containing films include hafnium tetrachloride (HfCL), tetrakis(diethylamino) hafnium (Hf(NEt2)4), and tetrakis(tert-butoxide) hafnium (Hf(OC(CH3)3)4).

[0088] Examples of vanadium-containing precursors for forming vanadium-containing films include vanadium tetrachloride, tetrakis(ethylmethylamino) vanadium, and tetrakis(diethylamino) vanadium.

[0089] Examples of titanium-containing precursors for forming titanium-containing films include titanium tetrachloride (TCI4) and titanium isopropoxide (Ti(OCH(CH3)2)4).

[0090] Any suitable number of ALD cycles can be performed, for example, based on a desired film thickness. If at 526 it is determined to perform an additional ALD cycle, method 500 can return to 522 and perform another dose step. If instead it is determined not to perform additional ALD cycles, the method can proceed to step 530 and terminate.

[0091] FIG. 6D shows substrate 600 following ALD processing at 520 to selectively deposit a film of aluminum oxide 612 on nitridated tin oxide 604 A. In other examples, any other suitable film can be deposited. However, due to the fluorination treatment, aluminum oxide is not deposited on fluorinated carbon surface 602A. In various experiments, omitting the nitridation treatment resulted in little to no aluminum oxide film growth. Further, omitting the halogenation treatment resulted in aluminum oxide film growth on carbon surfaces. As such, performing method 500, whichDocket No. LRC25318PPCTincludes a nitridation and a halogenation treatment, can help provide area-selective deposition of protective films, such as aluminum oxide, on tin oxide surfaces.

[0092] FIG. 7 schematically shows a non-limiting example of a computing system 700 that can enact one or more of the methods and processes described above. Computing system 700 is shown in simplified form. Computing system 700 may take the form of one or more personal computers, workstations, computers integrated with substrate processing tools, and / or network accessible server computers.

[0093] Computing system 700 includes a logic machine 702 and a storage machine 704. Computing system 700 may optionally include a display subsystem 706, input subsystem 708, communication subsystem 710, and / or other components not shown in FIG. 7. Controller 430 is an example of computing system 700.

[0094] Logic machine 702 includes one or more physical devices configured to execute instructions. For example, logic machine 702 may be configured to execute instructions that are part of one or more applications, services, programs, routines, libraries, objects, components, data structures, or other logical constructs. Such instructions may be implemented to perform a task, implement a data type, transform the state of one or more components, achieve a technical effect, or otherwise arrive at a desired result.

[0095] Logic machine 702 may include one or more processors configured to execute software instructions. Additionally or alternatively, logic machine 702 may include one or more hardware or firmware logic machines configured to execute hardware or firmware instructions. Processors of logic machine 702 may be single-core or multi-core, and the instructions executed thereon may be configured for sequential, parallel, and / or distributed processing. Individual components of logic machine 702 optionally may be distributed among two or more separate devices, which may be remotely located and / or configured for coordinated processing. Aspects of logic machine 702 may be virtualized and executed by remotely accessible, networked computing devices configured in a cloud-computing configuration.

[0096] Storage machine 704 includes one or more physical devices configured to hold instructions 712 executable by the logic machine 702 to implement the methods and processes described herein. When such methods and processes are implemented, the state of storage machine 704 may be transformed — e.g., to hold different data.

[0097] Storage machine 704 may include removable and / or built-in devices. Storage machine 704 may include optical memory (e.g., CD, DVD, HD-DVD, Blu-RayDocket No. LRC25318PPCTDisc, etc.), semiconductor memory (e.g., RAM, EPROM, EEPROM, etc.), and / or magnetic memory (e.g., hard-disk drive, floppy-disk drive, tape drive, MRAM, etc.), among others. Storage machine 704 may include volatile, nonvolatile, dynamic, static, read / write, read-only, random-access, sequential-access, location-addressable, file-addressable, and / or content-addressable devices.

[0098] It will be appreciated that storage machine 704 includes one or more physical devices. However, aspects of the instructions described herein alternatively may be propagated by a communication medium (e.g., an electromagnetic signal, an optical signal, etc.) that is not held by a physical device for a finite duration.

[0099] Aspects of logic machine 702 and storage machine 704 may be integrated together into one or more hardware-logic components. Such hardware-logic components may include field-programmable gate arrays (FPGAs), program- and application-specific integrated circuits (PASIC / ASICs), program- and applicationspecific standard products (PSSP / ASSPs), system-on-a-chip (SOC), and complex programmable logic devices (CPLDs), for example.

[0100] When included, display subsystem 706 may be used to present a visual representation of data held by storage machine 704. This visual representation may take the form of a graphical user interface (GUI). As the herein described methods and processes change the data held by the storage machine 704, and thus transform the state of the storage machine 704, the state of display subsystem 706 may likewise be transformed to visually represent changes in the underlying data. Display subsystem 706 may include one or more display devices utilizing virtually any type of technology. Such display devices may be combined with logic machine 702 and / or storage machine 704 in a shared enclosure, or such display devices may be peripheral display devices.

[0101] When included, input subsystem 708 may comprise or interface with one or more user-input devices such as a keyboard, mouse, or touch screen. In some examples, the input subsystem may comprise or interface with selected natural user input (NUI) componentry. Such componentry may be integrated or peripheral, and the transduction and / or processing of input actions may be handled on- or off-board. Example NUI componentry may include a microphone for speech and / or voice recognition, and an infrared, color, stereoscopic, and / or depth camera for machine vision and / or gesture recognition.

[0102] When included, communication subsystem 710 may be configured to communicatively couple computing system 700 with one or more other computingDocket No. LRC25318PPCTdevices. Communication subsystem 710 may include wired and / or wireless communication devices compatible with one or more different communication protocols. As non-limiting examples, the communication subsystem may be configured for communication via a wireless telephone network, or a wired or wireless local- or wide-area network. In some examples, the communication subsystem may allow computing system 700 to send and / or receive messages to and / or from other devices via a network such as the Internet.

[0103] It will be understood that the configurations and / or approaches described herein are exemplary in nature, and that these specific examples or examples are not to be considered in a limiting sense, because numerous variations are possible. The specific routines or methods described herein may represent one or more of any number of processing strategies. As such, various acts illustrated and / or described may be performed in the sequence illustrated and / or described, in other sequences, in parallel, or omitted. Likewise, the order of the above-described processes may be changed.

[0104] The subject matter of the present disclosure includes all novel and non-obvious combinations and sub-combinations of the various processes, systems and configurations, and other features, functions, acts, and / or properties disclosed herein, as well as any and all equivalents thereof.

Claims

Docket No. LRC25318PPCTCLAIMS:

1. A method of depositing a film, comprising:exposing a substrate to a carbon-containing precursor under conditions configured to result in geometrically-selective carbon deposition on the substrate, thereby forming a carbon film on selected regions of the substrate;exposing the substrate to one or more film precursors to deposit a film of a target material on the substrate not covered by the carbon film; andremoving the carbon film.

2. The method of claim 1, further comprising performing a post-treatment process on the carbon film before exposing the substrate to the one or more film precursors.

3. The method of claim 2, wherein the post-treatment process comprises exposure of the carbon film to a reducing treatment.

4. The method of claim 1, wherein the geometrically-selective carbon deposition comprises a plasma-enhanced chemical vapor deposition (PECVD) process.

5. The method of claim 1, wherein the carbon film is deposited at the bottom of a recessed feature and not on at least a portion of a sidewall of the recessed feature.

6. The method of claim 5, where the carbon film is deposited on a mesa adjacent to the recessed feature.

7. The method of claim 5, wherein the carbon film is not deposited on a mesa adjacent to the recessed feature.

8. A method of depositing a film on a substrate, the substrate comprising a carbon surface and a tin oxide surface, the method comprising:performing a nitridation treatment on the substrate to nitridate the tin oxide surface, thereby forming a nitridated tin oxide surface;performing a halogenation treatment on the substrate to halogenate the carbon surface, thereby forming a halogenated carbon surface; andDocket No. LRC25318PPCTperforming a deposition process to selectively deposit an aluminum oxide film on the nitridated tin oxide surface, wherein the halogenated carbon surface inhibits deposition of the aluminum oxide film on the halogenated carbon surface.

9. The method of claim 8, wherein performing the nitridation treatment comprises forming a plasma using nitrogen (N2).

10. The method of claim 8, wherein performing the halogenation treatment comprises performing a fluorination treatment to form a fluorinated carbon surface.

11. The method of claim 8, wherein performing the halogenation treatment comprises forming a plasma one or more of nitrogen trifluoride, fluorine, nitrogen trichloride, chlorine, bromine, iodine, chlorine monofluoride, bromine trifluoride, or iodine pentafluoride.

12. The method of claim 8, wherein performing the deposition process comprises performing atomic layer deposition (ALD) to selectively deposit the aluminum oxide film on the nitridated tin oxide surface.

13. The method of claim 12, wherein performing the deposition process comprises, in a dose step of an ALD cycle, exposing the substrate to one or more of trialkylaluminum, dialkylaluminum alkoxide, a mixed alkylaluminum alkoxide, an alkylaluminum amidinate, an alkylaluminum guanidinate, an amino alane, a dialkylaminoalane, a coordinated aluminum hydride, or an aluminum N-heterocyclic carbene.

14. The method of claim 8, wherein performing the nitridation treatment comprises using a temperature within a range of 50 °C to 250 °C.

15. The method of claim 8, wherein performing the nitridation treatment comprises using a pressure within a range of 0.1 Torr to 20 Torr.

16. The method of claim 8, wherein performing the halogenation treatment comprises using a temperature within a range of 50 °C to 250 °C.Docket No. LRC25318PPCT17. The method of claim 8, wherein performing the halogenation treatment comprises using a pressure within a range of 0.1 Torr to 20 Torr.

18. A method of depositing a film on a substrate, the substrate comprising a carbon surface and a tin oxide surface, the method comprising:performing a nitridation treatment on the substrate to nitridate the tin oxide surface, thereby forming a nitridated tin oxide surface;performing a halogenation treatment on the substrate to halogenate the carbon surface, thereby forming a halogenated carbon surface; andperforming atomic layer deposition (ALD) to selectively deposit a film on the nitridated tin oxide surface, wherein the halogenated carbon surface inhibits deposition of the film on the halogenated carbon surface.

19. The method of claim 18, wherein performing ALD comprises depositing an oxide, a nitride, an oxy carbide, an oxynitride, a metal, or a semimetal.

20. The method of claim 18, wherein performing ALD comprises depositing a film comprising one or more of silicon, aluminum, tungsten, molybdenum, zirconium, niobium, tantalum, hafnium, vanadium, or titanium.

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