Electrical isolation in semiconductor processing apparatus

Abstract

Fluid junction assemblies used with semiconductor processing apparatus, and methods and systems associated therewith are provided. In some embodiments, a fluid junction assembly may include a metallic portion and a dielectric portion. The metallic portion may include: a first inlet, a first outlet, a valve interface configured to receive a valve, a first passage fluidically connected to the first inlet and terminating at a second passage, the second passage fluidically connected to the first passage and extending partially through the metallic portion and terminating at the valve interface, and a venting conduit. The dielectric portion may include a dielectric portion inlet, a dielectric portion outlet, and a fourth passage spanning through the dielectric portion and fluidically connecting the dielectric portion inlet and the dielectric portion outlet, and configured to removably couple with the metallic portion and fluidically connect the first outlet to the dielectric portion inlet.

Description

Attorney Docket No.: LAM1P117W0 / 12284-1WOELECTRICAL ISOLATION IN SEMICONDUCTOR PROCESSING APPARATUSCROSS-REFERENCE TO RELATED APPLICATIONS

[0001] A PCT Request Form is filed concurrently with this specification as part of the present application. Each application that the present application claims benefit of or priority to as identified in the concurrently filed PCT Request Form is incorporated by reference herein in its entirety and for all purposes.BACKGROUND

[0002] Semiconductor manufacturing systems and apparatus typically include one or more processing chambers in which gases and plasma may be introduced. For example, a showerhead of a processing chamber may control delivery of one or more precursor gases and / or inert gases via a gas delivery system toward a surface of a semiconductor substrate or wafer inside the processing chamber. As another example, remote plasma cleaning (RPC) operations can involve introduction of plasma that is generated outside of the processing chamber into the processing chamber via a flowpath through the showerhead.

[0003] A connecting apparatus may be configured to mechanically couple the showerhead with one or more gas delivery lines and / or an valve of an RPC system. In some configurations, the showerhead may be at a non-zero electrical voltage while the gas delivery system and / or the RPC valve may be grounded.SUMMARY

[0004] In some embodiments, a fluid junction assembly for semiconductor processing is provided. The fluid junction assembly may include a metallic portion including: a first inlet, a first outlet, a valve interface configured to receive a valve, a first passage fluidically connected to the first inlet and terminating at a second passage, the second passage fluidically connected to the first passage and extending partially through the metallic portion and terminating at the valve interface, and a venting conduit that: extends within and is coaxial to the second passage, has a first end inside the metallic portion and a second end offset from the valve interface, the first end defining an opening, and has a cylindrical shape partially defining a third passage that extendsAttorney Docket No.: LAM1P117W0 / 12284-1WOthrough the venting conduit from the opening and through the metallic portion to the first outlet; and a dielectric portion including a dielectric portion inlet, a dielectric portion outlet, and a fourth passage spanning through the dielectric portion and fluidically connecting the dielectric portion inlet and the dielectric portion outlet, and configured to removably couple with the metallic portion and fluidically connect the first outlet to the dielectric portion inlet.

[0005] In some embodiments, the venting conduit extends along a center axis, and the first passage extends along a first axis that is perpendicular to the center axis and does not interest with the center axis.

[0006] In some embodiments, the metallic portion includes a first face, and the first passage extends through the first face and along a first axis that is oriented at a nonperpendicular angle with respect to the first face.

[0007] In some embodiments, the non-perpendicular angle is greater than 90 degrees.

[0008] In some embodiments, the fluid junction assembly further includes a first gas connector coupled to the metallic portion and fluidically connected to the first inlet, wherein: the first gas connector has a connector passage fluidically connected to the first inlet and having a first inner diameter, the first inlet has an inlet diameterthat is the same as the first inner diameter, and the first passage has a first passage diameter that is the same as the first inner diameter.

[0009] In some embodiments, the connector passage extends along a connector axis, and the first passage extends along a first passage axis that is oriented at an obtuse angle with respect to the connector axis.

[0010] In some embodiments, the second passage has a first passage end that terminates at the valve interface and a second passage end opposite the first passage, and the second passage end has a partial spiral surface that extends partially around the venting conduit.

[0011] In some embodiments, the partial spiral surface extends less than 360 degrees around the venting conduit.

[0012] In some embodiments, the metallic portion has a portion end having the valveAttorney Docket No.: LAM1P117W0 / 12284-1WOinterface, the venting conduit extends along a center axis, and when viewed perpendicular to the center axis, the opening of the venting conduit is offset from the portion end by a first offset distance.

[0013] In some embodiments, when a valve is interfaced with the valve interface, the fluid junction assembly is configured to enable fluid to flow through the first inlet of the metallic portion to the first passage, through the second passage to the opening, from the opening through the third passage, through the fourth passage, and out the dielectric portion outlet.

[0014] In some embodiments, when the valve is interfaced with the valve interface, the fluid junction assembly is configured to provide a fluidic connection between the second passage and the third passage.

[0015] In some embodiments, the second passage includes a passage between an outer surface of the venting conduit and an inner surface of a side wall of the second passage; and the venting conduit includes a side wall that is radially inward of the side wall of the second passage.

[0016] In some embodiments, the fluid junction assembly has no dead volume within at least the second passage of the metallic portion, the third passage of the venting conduit, or a combination thereof.

[0017] In some embodiments, the dielectric portion further includes a securing feature, the securing feature including one or more holes sized to receive corresponding one or more connection features; and the metallic portion includes one or more threaded bores corresponding to the one or more holes of the securing feature.

[0018] In some embodiments a semiconductor processing system is provided. The system may include: a gas delivery system; a valve; a showerhead including an inlet; a radio frequency (RF) power source; and a fluid junction assembly including: a metallic portion including a first inlet, a first outlet, a first passage fluidically connected to the first inlet, a valve interface configured to receive the valve, and a venting conduit fluidically connected to the first passage and the valve interface, wherein the venting conduit extends from an opening internal to the metallic portion to an outlet; and a dielectric portion including a second inlet fluidically connected with a second outlet via a secondAttorney Docket No.: LAM1P117W0 / 12284-1WOpassage spanning through the dielectric portion, wherein the dielectric portion is configured to removably couple with the metallic portion and fluidically connect the first outlet to the second inlet; wherein: the showerhead is electrically coupled with the RF power source and configured to receive RF power; and the metallic portion of the fluid junction assembly, and the valve are grounded.

[0019] In some embodiments, the metallic portion is constructed of an aluminum or aluminum alloy; and the dielectric portion is constructed of a ceramic material.

[0020] In some embodiments, the dielectric portion includes a flange that provides coupling between the metallic portion and a portion of the inlet of the showerhead.

[0021] In some embodiments, the venting conduit extends along a center axis, and the first passage extends along a first axis that is perpendicular to the center axis and does not interest with the center axis.

[0022] In some embodiments, the metallic portion includes a first face, and the first passage extends through the first face and along a first axis that is oriented at a nonperpendicular angle with respect to the first face.

[0023] In some embodiments, the second passage has a first passage end that terminates at the valve interface and a second passage end opposite the first passage, and the second passage end has a partial spiral surface that extends partially around the venting conduit.

[0024] In one aspect of the present disclosure, a fluid junction assembly for semiconductor processing is disclosed. In some embodiments, the fluid junction assembly may include a metallic portion comprising: a first inlet, a first outlet, a valve interface configured to receive a valve, a first passage fluidically connected to the first inlet and terminating at a second passage, the second passage fluidically connected to the first passage and extending partially through the metallic portion and terminating at the valve interface, and a venting conduit that: extends within and is coaxial to the second passage, has a first end inside the metallic portion and a second end offset from the valve interface, the first end defining an opening, and has a cylindrical shape partially defining a third passage that extends through the venting conduit from the opening and through the metallic portion to the first outlet; and a dielectric portion comprising a dielectricAttorney Docket No.: LAM1P117W0 / 12284-1WOportion inlet, a dielectric portion outlet, and a fourth passage spanning through the dielectric portion and f luidica lly connecting the dielectric portion inlet and the dielectric portion outlet, and configured to removably couple with the metallic portion and fluidically connect the first outlet to the dielectric portion inlet.

[0025] In another aspect of the present disclosure, a semiconductor processing system is disclosed. In some embodiments, the semiconductor processing system may include: a gas delivery system; a valve; a showerhead comprising an inlet; a radio frequency (RF) power source; and a fluid junction assembly including: a metallic portion including a first inlet, a first outlet, a first passage fluidically connected to the first inlet, a valve interface configured to receive the valve, and a venting conduit fluidically connected to the first passage and the valve interface, wherein the venting conduit extends from an opening internal to the metallic portion to an outlet; and a dielectric portion comprising a second inlet fluidically connected with a second outlet via a second passage spanning through the dielectric portion, wherein the dielectric portion is configured to removably couple with the metallic portion and fluidically connect the first outlet to the second inlet.

[0026] In some implementations thereof, the showerhead may be electrically coupled with the RF power source and configured to receive RF power; and the metallic portion of the fluid junction assembly, and the valve may be grounded.

[0027] Details of one or more implementations of the subject matter described in this specification are set forth in the accompanying drawings and the description below. Other features, aspects, and advantages will become apparent from the description, the drawings, and the claims. The following, non-limiting implementations are considered part of the disclosure; other implementations will be evident from the entirety of this disclosure and the accompanying drawings as well.

[0028] Additional aspects will be set forth in the detailed description which follows, and, in part, will be apparent from the disclosure, or may be learned by practice of the disclosed implementations and / or the claimed subject matter.

[0029] The foregoing general description and the following detailed description are illustrative and explanatory and are intended to provide further explanation of the claimed subject matter.Attorney Docket No.: LAM1P117W0 / 12284-1WOBRIEF DESCRIPTION OF THE DRAWINGS

[0030] Various implementations disclosed herein are illustrated by way of example, and not by way of limitation, in the figures of the accompanying drawings, in which like reference numerals refer to similar elements.

[0031] Figure 1 schematically shows an implementation of a processing station for semiconductor processing.

[0032] Figures 2A and 2B depict cross-sectional and exploded cross-sectional views of a fluid junction assembly, according to some embodiments.

[0033] Figures 2C and 2D depict isometric cross-sectional and exploded isometric cross-sectional views of the fluid junction assembly of Figures 2A and 2B, according to some embodiments.

[0034] Figure 2E depicts an isometric cross-sectional view of the fluid junction assembly of Figures 2A and 2B, using a securing plate according to some embodiments.

[0035] Figure 2F depicts another cross-sectional view of the fluid junction assembly of Figures 2A and 2B, according to some embodiments.

[0036] Figures 2G and 2H depict cross-sectional views of a portion of the fluid junction assembly of Figures 2A-2F, according to some embodiments.

[0037] Figure 3 depicts a schematic view of an implementation of a multi-station processing tool.

[0038] Figure 4A depicts a cross-sectional side view of another example first portion of a fluid junction assembly.

[0039] Figure 4B depicts a cross-sectional top view of the first portion of Figure 4A.

[0040] Figure 4C depicts the cross-sectional top view of the first portion of Figure 4B along with a first connector.

[0041] Figure 4D depicts a cross-sectional side view of another example fluid junction assembly.

[0042] Figure 5 depicts an example helical pathway.Attorney Docket No.: LAM1P117W0 / 12284-1WODETAILED DESCRIPTION

[0043] In the following description, numerous specific details are set forth in order to provide a thorough understanding of various implementations. The disclosed implementations may be practiced without some or all of these specific details. In other instances, well-known process operations have not been described in detail to not unnecessarily obscure the disclosed implementations. While the disclosed implementations will be described in conjunction with specific implementations, it will be understood that it is not intended to limit the disclosed implementations.

[0044] In this application, the terms "semiconductor wafer," "wafer," "substrate," "wafer substrate" and "partially fabricated integrated circuit" are used interchangeably. One of ordinary skill in the art would understand that the term "partially fabricated integrated circuit" can refer to a silicon wafer during any of many stages of integrated circuit fabrication thereon. A wafer or substrate used in the semiconductor device industry typically has a diameter of 200 mm, or 300 mm, or 450 mm. In addition to semiconductor wafers, other work pieces that may take advantage of the disclosed implementations include various articles, such as printed circuit boards, magnetic recording media, magnetic recording sensors, mirrors, optical elements, micromechanical devices, and the like.

[0045] When an element, such as a frame, is referred to as being "on," "connected to," or "coupled to" another element, it may be directly on, directly connected to, or directly coupled to the other element, or at least one intervening element may be present. When, however, an element is referred to as being "directly on," "directly connected to," or "directly coupled to" another element, there are no intervening elements present. Other terms and / or phrases if used herein to describe a relationship between elements should be interpreted in a like fashion, such as "between" versus "directly between," "adjacent" versus "directly adjacent," "on" versus "directly on," etc. Further, the term "connected" may refer to physical, electrical, and / or fluid connection. To this end, for the purposes of this disclosure, the phrase "fluidically connected" is used with respect to volumes, plenums, holes, orifices, etc., that may be connected to one another, either directly or via one or more intervening components or volumes, to form a fluidic connection, similar to how the phrase "electrically connected" is used with respect to components that areAttorney Docket No.: LAM1P117W0 / 12284-1WOconnected to form an electric connection. The phrase "fluidically interposed," if used, may be used to refer to a component, volume, plenum, hole, orifice, passage, etc., that is fluidically connected with at least two other components, volumes, plenums, holes, orifices, passages, etc., such that fluid flowing from one of those other components, volumes, plenums, holes, orifices, passages, etc., to the other or another of those components, volumes, plenums, holes, orifices, passages, etc., would first flow through the "fluidically interposed" component before reaching that other or another of those components, volumes, plenums, holes, orifices, passages, etc.. For example, if a pump is fluidically interposed between a reservoir and an outlet, fluid flowing from the reservoir to the outlet would first flow through the pump before reaching the outlet. The phrase "fluidically adjacent," if used, refers to placement of a fluidic element relative to another fluidic element such that no potential structures fluidically are interposed between the two elements that might potentially interrupt fluid flow between the two fluidic elements. For example, in a flow path having a first valve, a second valve, and a third valve arranged sequentially therealong, the first valve would be fluidically adjacent to the second valve, the second valve fluidically adjacent to both the first and third valves, and the third valve fluidically adjacent to the second valve.

[0046] Various semiconductor manufacturing processes, such as atomic layer deposition (ALD), atomic layer etching (ALE), chemical vapor deposition (CVD), chemical vapor etching (CVE), and the like, as well as plasma-enhanced versions of the same, may employ at least one gas delivery system in which vapor-phase and sometimes gas precursors are reacted with and / or on a surface of a substrate to deposit material thereon or remove material therefrom. Many semiconductor processing tools and apparatuses have a gas delivery system with a showerhead in a processing chamber that is configured to flow process gases onto a substrate in the chamber. Some semiconductor processing performs purge operations during or after performing a processing cycle. These purge operations may flow purge gas through the showerhead and into the chamber. Gas flow, such as purge gas or process gas, into and through the showerhead may be considered a "primary gas flowpath," a "primary flowpath," a "primary purge flowpath", or a "primary purge."

[0047] Some new and emerging showerheads and processes provide radio frequencyAttorney Docket No.: LAM1P117W0 / 12284-1WO(RF) power to the showerhead, referred to as an "RF hot" showerhead, instead of having the showerhead electrically grounded. In contrast, the outer walls of many semiconductor processing chambers, including the top, are electrically grounded.

[0048] While having the showerhead as RF hot may be advantageous for various processing operations, it presents numerous challenges when using the RF hot showerheads, such as connecting various gas flow components to the showerhead stem which are typically metallic and conductive. Connecting such metallic gas flow components, such as a valve, a valve block, of a flow conduit, to an RF hot showerhead can have multiple negative effects. For example, the metallic flow components can electrically short or ground the RF hot showerhead and thereby negatively affect the RF power and plasma generation by the RF hot showerhead. Another challenge is implementing an electrical isolation component that both enables an isolated RF hot showerhead without the side effects of parasitic plasmas emanating from the showerhead between a gas inlet and valve(s) directing gas into it that could then affect gas flows. Electrical isolation can prevent electrical shorting between these subsystems, including between showerhead and gas delivery system, and between showerhead and valves. It is therefore desirable to provide electrical insulation between the RF hot showerhead and upstream flow components.

[0049] Additionally, as new and emerging processes and hardware are being developed, numerous challenges arise, including providing adequate cleaning of the processing chamber. For example, some new processes perform a chamber cleaning operation by flowing a remote plasma cleaning gas ("RPC gas"), such as a radicalized fluorine, into the chamber through the primary flowpath through the showerhead.

[0050] Provided herein are new and novel flow components configured to electrically isolate a showerhead stem from upstream gas flow components while still providing the desired flows and flow controls. The fluid junction assembly may be configured to couple a showerhead stem or inlet extending externally from a showerhead inside a processing chamber of a semiconductor processing apparatus, with a gas delivery system and a RPC system (including an RPC valve). Examples of the fluid junction assembly may be a "tee" having three openings. In some implementations, a fluid junction assembly is provided with a tee functionality by having two inlets f I uidica I ly connected to one outlet and havingAttorney Docket No.: LAM1P117W0 / 12284-1WOa first portion comprised of a metal or metal alloy that is connected to a second portion comprised of a dielectric material, like a ceramic. In some instances, the fluid junction assembly is configured to connect with a valve at one inlet and provide minimal to no dead volume to gas flowing within the fluid junction assembly. In some instances, the outlet of the fluid junction assembly is configured to connect with the showerhead inlet, where the outlet is at the second portion having dielectric material.

[0051] When flowing two gas flows into a junction, like a fluid junction assembly, many existing tee junctions are unable to reduce or eliminate dead volume, which may refer to a volume of gases (or other fluid substance) whose flow is stagnant, trapped, or minimal, and occur in various valves and conduits, such as gas delivery lines. Dead volume can occur in certain places within gas delivery lines known as dead legs, which can result in undesirable effects. For instance, dead volume can trap gases and residuals from previous processes and previous gas flows, which could allow gas or fluid that is "upstream" of the dead leg to be evacuated from the system while the gas or fluid that is in the dead leg still remains in the system, and possibly largely stagnant, which could lead to contamination of the current process gas(es). Dead volume can also cause variations in gas flow and pressure, leading to inconsistencies in downstream deposition or etching processes in the processing chamber. In some examples, it is important to minimize dead volumes in tools implementing fast gas transitions between incompatible gas species. Moreover, having flow components that are made of only dielectric materials may be unable to meet the various requirements for the flow elements prohibitively increase costs in some cases or result in inconsistent manufacturing (e.g., if 3D printed) which can result in unacceptable effects.

[0052] Other solutions may be unavailable due to space constraints, such as insufficient space to use the components or impact on other components of the semiconductor processing apparatus (e.g., to cooling plate, seals, etc.).

[0053] To these ends, some embodiments disclosed herein may be directed to systems, apparatuses, and components (e.g., fluid junction assembly such as tees) configured to minimize cost, reduce dead volume, provide electrical isolation between other components, along with flexibility in control and reconfiguration with respect to other components. More specifically, it would be beneficial for radio frequency (RF) power-Attorney Docket No.: LAM1P117W0 / 12284-1WOdriven hot showerheads to be electrically isolated from the RPC valve and the gas delivery system while having the above benefits.

[0054] In some embodiments, the fluid junction assembly may be a tee structure having a first portion and a second portion. In some implementations, the first portion of the fluid junction assembly may be a metallic portion, and the second portion may be a dielectric portion. For example, the second portion of the fluid junction assembly may be constructed of dielectric materials, such as a ceramic material or other insulative material. In some implementations, the first and second portions of the fluid junction assembly may be configured to be removably coupled from each other. For example, the second portion of the fluid junction assembly (e.g., a dielectric portion) may be securable to the first portion of the fluid junction assembly (e.g., a metallic portion).

[0055] As will be discussed below, in some embodiments, the first portion of the fluid junction assembly (e.g., metallic portion) may be configured to be coupled with other portions or components of the semiconductor processing apparatus, such as a gas delivery system and / or an RPC valve, such that gases and plasma can traverse through the first portion of the fluid junction assembly and to the second portion of the fluid junction assembly. Further, in some embodiments, the second portion of the fluid junction assembly (e.g., dielectric portion) may be configured to be coupled with a showerhead of the semiconductor processing apparatus. For instance, the showerhead at one portion may have a plurality of holes sized and located to deliver gases to a semiconductor substrate in a processing chamber, while at another portion may have a stem that extends away from the processing chamber. In some configurations, the second portion of the fluid junction assembly may be configured to couple with the showerhead stem. In some implementations, a portion of the stem is positioned inside the dielectric portion. The second portion may also be configured to provide electrical isolation between the metallic first portion and the showerhead.

[0056] Some implementations of the metallic portion of the fluid junction assembly may include an elongated internal channel, such as a venting conduit (also referred to herein as a "stovepipe") that can reduce dead volume and backdrafting, as will be illustrated and discussed elsewhere herein.Attorney Docket No.: LAM1P117W0 / 12284-1WO

[0057] Some implementations of the dielectric portion of the fluid junction assembly may also have various subcomponents, such as through holes and securing elements (e.g., bolts) that can secure the dielectric portion with the metallic portion, as well as elastomer components that provide a buffer between certain components.

[0058] Additional details will be provided after an initial description of relevant systems and technologies.

[0059] By way of introduction, a processing station of a semiconductor processing system is provided in Figure 1. Figure 1 depicts an implementation of a semiconductor processing station 100, which may also be considered a semiconductor processing system 100, that may be used to deposit material using atomic layer deposition (ALD), chemical vapor deposition (CVD), atomic layer etching (ALE), or other etching process, all of which may be plasma enhanced. As a non-limiting example, in some approaches, plasma enhanced chemical vapor deposition (PECVD) may be performed using the semiconductor processing station 100. For simplicity, the processing station 100 is depicted as a standalone process station having a processing chamber body 102 for maintaining a low-pressure environment. The processing chamber body 102 has a top 128 and forms a chamber interior 111. However, it will be appreciated that a plurality of process stations 100 may be included in a common process tool environment. Further, it will be appreciated that, in some implementations, one or more hardware parameters of process station 100, including those discussed in detail below, may be adjusted programmatically by one or more computer controllers.

[0060] Process station 100 fluidly communicates with gas delivery system 101 for delivering process gases to a showerhead 106. The showerhead 106 has a showerhead body 113 positioned in the chamber interior 111 and a showerhead stem 115 extending through the top 128 of the processing chamber body 102. The gas delivery system 101 includes a process gas source configured to provide process gas 120. Some implementations of the gas delivery system 101 may include one or more further and a second process gas source f luidica lly connected with the process gas source 120, e.g., via a mixing junction (not shown) configured to blend, condition, or mix process gases for delivery to showerhead 106. One or more inlet valves (not shown) may control introduction of process gases to the mixing junction and control introduction of processAttorney Docket No.: LAM1P117W0 / 12284-1WOgasses to an inlet 107 of the showerhead 106. The process gas 120 may be a reactant, precursor, or a mixture. Other process gases may include a purge gas source which may be an inert gas, like argon or nitrogen.

[0061] In some embodiments, the gas delivery system 101 may also include a cleaning gas source 153, which may be a remote plasma source configured to flow RPC gas. In some implementations, the RPC gas may include a fluorine, such as radicalized fluorine or a fluorine plasma. Downstream of, and fluidically connected to, the cleaning gas source 153 is the showerhead inlet 107

[0062] Showerhead 106 may be configured or constructed to distribute process gases toward substrate 112. In the implementation shown in Figure 1, substrate 112 is located beneath showerhead 106, and is shown resting on a pedestal 108. The showerhead 106 may be configured to allow gases and plasma to be released toward a semiconductor substrate 112 via a plurality of through-holes. It will be appreciated that showerhead 106 may have any suitable shape, and may have any suitable number and arrangement of ports and holes for distributing processes gases to substrate 112. As depicted, the showerhead 106 may be a chandelier-type with the showerhead body 113 positioned in the chamber interior 111 and the showerhead stem 115 connected to the showerhead body 113 and extending from the chamber interior 111, through the top 128, and to an area outside the chamber body 102. The showerhead body 113 is supported by the showerhead stem 115 and its direct or indirect connection to the chamber top 128.

[0063] In some other implementations, the showerhead may be positioned within the chamber top 128 and may still have its stem or inlet above the processing chamber. The fluid junction assembly provided herein may be configured to electrically isolate any such implementation of showerhead.

[0064] In some implementations, the showerhead 106 is electrically connected to the RF power supply 114 and may be considered an "RF hot" showerhead. The pedestal 108 and the chamber body 102 including the top 128 may be electrically grounded.

[0065] In some implementations, a microvolume 103 is located beneath showerhead 106. Performing an ALD and / or CVD process in a microvolume rather than in the entire volume of a process station may reduce reactant exposure and sweep times, may reduceAttorney Docket No.: LAM1P117W0 / 12284-1WOtimes for altering process conditions (e.g., pressure, temperature, etc.), may limit an exposure of process station robotics to process gases, etc. Example microvolume sizes include, but are not limited to, volumes between 0.1 liter and 2 liters. This microvolume also impacts productivity throughput. While deposition rate per cycle drops, the cycle time also simultaneously reduces. In certain cases, the effect of the latter is dramatic enough to improve overall throughput of the module for a given target thickness of film.

[0066] In some implementations, pedestal 108 may be raised or lowered to expose substrate 112 to microvolume 103 and / or to vary a volume of microvolume 103. For example, in a substrate transfer phase, pedestal 108 may be lowered to allow substrate 112 to be loaded onto pedestal 108. During a deposition process phase, pedestal 108 may be raised to position substrate 112 within microvolume 103. In some implementations, microvolume 103 may completely enclose substrate 112 as well as a portion of pedestal 108 to create a region of high flow impedance during a deposition process.

[0067] Optionally, pedestal 108 may be lowered and / or raised during portions the deposition process to modulate process pressure, reactant concentration, etc., within microvolume 103. In one scenario where processing chamber body 102 remains at a base pressure during the deposition process, lowering pedestal 108 may allow microvolume 103 to be evacuated. Example ratios of microvolume to processing chamber volume include, but are not limited to, volume ratios between 1:100 and 1:10. It will be appreciated that, in some implementations, pedestal height may be adjusted programmatically by a suitable computer controller.

[0068] In another scenario, adjusting a height of pedestal 108 may allow a plasma density to be varied during plasma activation and / or treatment cycles included in the deposition process. At the conclusion of the deposition process phase, pedestal 108 may be lowered during another substrate transfer phase to allow removal of substrate 112 from pedestal 108.

[0069] While the example microvolume variations described herein refer to a height-adjustable pedestal, it will be appreciated that, in some implementations, a position of showerhead 106 may be adjusted relative to pedestal 108 to vary a volume ofAttorney Docket No.: LAM1P117W0 / 12284-1WOmicrovolume 103. Further, it will be appreciated that a vertical position of pedestal 108 and / or showerhead 106 may be varied by any suitable mechanism within the scope of the present disclosure. In some implementations, pedestal 108 may include a rotational axis for rotating an orientation of substrate 112. It will be appreciated that, in some implementations, one or more of these example adjustments may be performed programmatically by one or more suitable computer controllers.

[0070] Returning to the implementation shown in Figure 1, showerhead 106 and pedestal 108 electrically communicate with RF power supply 114 and matching network 116 for powering a plasma. In some implementations, the plasma energy may be controlled by controlling one or more of a process station pressure, a gas concentration, an RF source power, an RF source frequency, and a plasma power pulse timing. For example, RF power supply 114 and matching network 116 may be operated at any suitable power to form a plasma having a desired composition of radical species. Examples of suitable powers are included above. Likewise, RF power supply 114 may provide RF power of any suitable frequency. In some implementations, RF power supply 114 may be configured to control high- and low-frequency RF power sources independently of one another. Example low-frequency RF frequencies may include, but are not limited to, frequencies between 50 kHz and 100 kHz. Example high-frequency RF frequencies may include, but are not limited to, frequencies between 1.8 MHz and 2.45 GHz. It will be appreciated that any suitable parameters may be modulated discretely or continuously to provide plasma energy for the surface reactions. In one non-limiting example, the plasma power may be intermittently pulsed to reduce ion bombardment with the substrate surface relative to continuously powered plasmas.

[0071] In some implementations, the plasma may be monitored in-situ by one or more plasma monitors. In one scenario, plasma power may be monitored by one or more voltage, current sensors (e.g., VI probes). In another scenario, plasma density and / or process gas concentration may be measured by one or more optical emission spectroscopy sensors (OES). In some implementations, one or more plasma parameters may be programmatically adjusted based on measurements from such in-situ plasma monitors. For example, an OES sensor may be used in a feedback loop for providing programmatic control of plasma power. It will be appreciated that, in someAttorney Docket No.: LAM1P117W0 / 12284-1WOimplementations, other monitors may be used to monitor the plasma and other process characteristics. Such monitors may include, but are not limited to, infrared (I R) monitors, acoustic monitors, and pressure transducers.

[0072] In some implementations, the plasma may be controlled via input / output control (IOC) sequencing instructions. In one example, the instructions for setting plasma conditions for a plasma process phase may be included in a corresponding plasma activation recipe phase of a deposition process recipe. In some cases, process recipe phases may be sequentially arranged, so that all instructions for a deposition process phase are executed concurrently with that process phase. In some implementations, instructions for setting one or more plasma parameters may be included in a recipe phase preceding a plasma process phase. For example, a first recipe phase may include instructions for setting a flow rate of an inert and / or a reactant gas, instructions for setting a plasma generator to a power set point, and time delay instructions for the first recipe phase. A second, subsequent recipe phase may include instructions for enabling the plasma generator and time delay instructions for the second recipe phase. A third recipe phase may include instructions for disabling the plasma generator and time delay instructions for the third recipe phase. It will be appreciated that these recipe phases may be further subdivided and / or iterated in any suitable way within the scope of the present disclosure.

[0073] In some deposition processes, plasma strikes last on the order of a few seconds or more in duration. In certain implementations, much shorter plasma strikes may be used. For example, these may be on the order of 10 ms to 1 second, orfor example about 20 to 80 ms, with 50 ms being a specific illustrative example. Such very short RF plasma strikes require extremely quick stabilization of the plasma. To accomplish this, the plasma generator may be configured such that the impedance match is set preset to a particular voltage, while the frequency is allowed to float. Conventionally, high-frequency plasmas are generated at an RF frequency at about 13.56 MHz. In various implementations disclosed herein, the frequency is allowed to float to a value that is different from this standard value. By permitting the frequency to float while fixing the impedance match to a predetermined voltage, the plasma can stabilize much more quickly, a result which mayAttorney Docket No.: LAM1P117W0 / 12284-1WObe important when using the very short plasma strikes associated with some types of deposition cycles.

[0074] In some implementations, pedestal 108 may be temperature controlled via heater 110. Further, in some implementations, pressure control for deposition process station 100 may be provided by butterfly valve 118. As shown in the implementation of Figure 1, butterfly valve 118 may be configured to throttle a vacuum provided by a downstream vacuum pump (not shown). However, in some implementations, pressure control of process station 100 may also be adjusted by varying a flow rate of one or more gases introduced to process station 100.

[0075] While Figure 1 only depicts one process station 100, some systems may have more processing stations, such as two, three, four, five, six, eight, or ten. These systems may by similarly configured as with system 100 such that each station has at least one gas flowpath, a fluid junction assembly, and / or a processing chamber body with a showerhead and a pedestal able to hold a substrate. In some implementations, two or more processing stations may share a process gas source and / or a cleaning gas source. Additional multi-station systems and chambers are provided below, such as in Figure 3. Each station provided therein may have the same features of each station in Figure 1, for example.

[0076] As provided below, in some implementations, the showerhead of each system is configured to receive RF power. Providing RF power to the showerhead may present additional challenges for conventional systems. However, the systems provided herein advantageously flow RPC gas with limited recombination of the RPC gas and low to no formation of parasitic plasma.

[0077] In some implementations, some or all of the parts or components discussed herein may include an insulating jacket around them.Electrically Isolating Fluid Junction Assembly

[0078] Referring again to Figure 1, the semiconductor processing station 100, and more specifically, the gas delivery system 101, may include a fluid junction assembly. One example embodiment of such a fluid junction assembly may be a fluid junction assembly 130 or a tee component, as will now be discussed. Embodiments of the fluid junctionAttorney Docket No.: LAM1P117W0 / 12284-1WOassembly 130 disclosed herein may provide specific structures, features, and configurations that provide the advantages discussed elsewhere herein.

[0079] In some embodiments, the fluid junction assembly 130 may be used to couple various components of the semiconductor processing system 100. For example, fluid junction assembly 130 may be configured to couple a gas delivery system, an RPC system, and a showerhead. More particularly, in some configurations, a gas delivery line 125 of a gas delivery system may removably couple to a first inlet of the fluid junction assembly 130, an RPC valve 122 (which may be part of an RPC system configured to generate plasma (e.g., remotely at cleaning gas source 153 and delivered via the RPC valve 122) may removably interface with a second inlet of the fluid junction assembly 130, and a stem portion 115 (and inlet 107) of showerhead 106 may removably interface with an outlet of the fluid junction assembly 130. Each inlet and outlet may be an opening to a conduit that may provide flowpaths to each of the other inlet or outlets. As used herein, the terms "inlet" and "outlet" are used for convenience and are not limiting of the direction of flow of gases, plasma, and other substances through flowpaths and conduits within the fluid junction assembly 130. In some implementations, the gas delivery system 120 and the RPC valve 122 may be electrically grounded, while the showerhead 106 may be electrically charged or conducting.

[0080] In some embodiments, a fluid junction assembly 130 may be a tee structure having multiple inlets and outlets. In some example configurations, the fluid junction assembly 130 may be disposed and implemented at a location of the semiconductor processing apparatus between a gas delivery system and a showerhead, such as at the showerhead inlet 107.

[0081] As such, the fluid junction assembly 130 may be configured to connect and provide fluids, such as gases, liquids, vapors, plasmas, and mixtures of various components, access among the gas delivery system, the RPC valve 122, and the showerhead 106. For example, the gas delivery system may be connected to at least the showerhead 106 via a gas delivery line 125 and / or other flowpath(s) coupled to the fluid junction assembly 130.Attorney Docket No.: LAM1P117W0 / 12284-1WO

[0082] In some embodiments, the fluid junction assembly 130 may include one or more internal conduits and a venting conduit 151 (a "stovepipe") configured to prevent dead volumes inside the fluid junction assembly 130. The venting conduit 151 may include elongated walls that are at least partly parallel or substantially parallel to the inner and / or outer surfaces of the fluid junction assembly 130 such that, for example, gases can traverse in one direction and then another direction to reach the showerhead inlet 107 (as indicated by the series of black arrows).

[0083] In some embodiments, the fluid junction assembly 130 may include a first portion 132 and a second portion 134. In some configurations, first portion 132 may be a separate component that is mechanically coupled with the second portion 134. In turn, the second portion 134 may be coupled with the showerhead inlet 107.

[0084] In some implementations, the first portion 132 may be a metallic portion. For example, the first portion 132 may be made of aluminum or aluminum alloy. The stovepipe, winding conduits and passages associated therewith (e.g., second passage 212 and third passage 213 discussed below), threaded screw holes, and other complex features may be implemented at the first portion 132. Metallic construction can result in consistent and accurate dimensions and tolerance for complex features while reducing cost. For instance, stovepipe features may be press fitted. In some implementations, the second portion 134 may be a dielectric portion that is electrically isolating. In some cases, the second portion 134 may also be thermally isolating. For example, the dielectric portion may be a ceramic flange that provides electrical isolation between the first portionl32 and the showerhead components.

[0085] Herein lies a salient advantage of the present disclosure. In fluid junction assembly 130, having modular separation of the first portion 132 and the second portion 134, the dielectric nature of the second portion 134 of the fluid junction assembly 130 (which may be configured to interface with the electrically charged showerhead 106) provides electrical and RF isolation between components of the semiconductor processing system 100, e.g., between the gas delivery system 120 (which may be grounded) and the showerhead 106, and between the RPC valve 122 (which may be grounded) and the showerhead 106. This may prevent shorting. In addition, the "stovepipe" structure within the fluid junction assembly 130 reduces dead volume. InAttorney Docket No.: LAM1P117W0 / 12284-1WOaddition, the modular nature of the fluid junction assembly 130 allows for easy redesign and reconfiguration of the coupling of the aforementioned components. Moreover, keeping a portion of the fluid junction assembly 130 metallic and an isolative portion of it as dielectric (e.g., ceramic) minimizes production costs.

[0086] In contrast, conventional solutions such as a fully metallic fluid junction assembly or tee provides no electrical isolation, and a fully ceramic fluid junction assembly may not have a dead volume reduction feature and may be costly.

[0087] Further details of the fluid junction assembly 130 are shown in and now described below with respect to Figures 2A - 2H.

[0088] Figure 2A shows a cross-sectional view of a fluid junction assembly 200, according to some embodiments. Reference will also be made to Figure 2B, which shows an exploded cross-sectional view of the fluid junction assembly 200, according to some embodiments. As can be easily seen in Figure 2B, the first portion 202 and the second portion 204 may be separate components. In some embodiments, as discussed above, the first portion 202 may be a metallic component (e.g., an aluminum oraluminum alloy), and the second portion 204 may be a dielectric component (e.g., a ceramic).

[0089] In some embodiments, the fluid junction assembly 200 may be a tee having conduits therein, and configured to provide a junction to components of a semiconductor processing apparatus. Such components may include, as discussed above, a gas delivery system (not shown), an RPC valve 201, and a showerhead (not shown). In some implementations, the junction assembly may be other shapes and not a "tee", such as a single rectangular block having the same internal features provided herein.

[0090] In some embodiments, the fluid junction assembly 200 may include a first portion 202 and a second portion 204. The first portion 202 may be a metallic construct, while the second portion 204 may be constructed of a dielectric material. In some examples, the second portion 204 may be a ceramic material. However, in other examples, the second portion 204 may be made of other electrically and / or thermally insulating material. The first portion 202 may be an example of the first portion 132, and the second portion 204 may be an example of the first portion 134, as discussed above. Hence, the first portion 202 may be a metallic component of a tee with a stovepipeAttorney Docket No.: LAM1P117W0 / 12284-1WOremovably coupled with the second portion 204, which may be a ceramic flange. The first portion 202 and the second portion 204 may be permanently or semi-permanently attached to each other. In some configurations, the ceramic second portion 204 may be removed or detached from the metallic first portion 202; another component such as another flange may be attached to the first portion 202.

[0091] In some implementations, a first inlet 205 of the fluid junction assembly 200 may be configured to couple with a gas inlet or gas delivery line of the gas delivery system (not shown), fluidically connecting a first passage 206 with a second passage 212, which may be a flowpath that is radially outward from a venting conduit 211 (also referred to herein as a "stovepipe") of the fluid junction assembly 200.

[0092] In some implementations, the fluid junction assembly 200 also has a valve interface 215 that may be configured to couple with an RPC valve 201. When the valve interface 215 and the RPC valve 201 interface with each other as seen in Figure 2A (unlike, e.g., the detached configuration of Figure 2B), the second passage 212 may be fluidically connected with a third passage 213, which may extend through the venting conduit 211 from an opening 208 (shown in Figure 2B) to a passage outlet 255, which may be considered a first outlet of the first portion 202. Gas is configured to flow through the third passage 213 of the venting conduit 211 from the opening 208 to the passage outlet 255. Such fluidic connection through the third passage 213 may extend through the first portion 202, e.g., a metallic portion. When the first portion 202 is removably coupled with the second portion 204 as shown, the first passage 206, the second passage 212, and the third passage 213 may be fluidically connected with a fourth passage 214 spanning through the second portion 204 from an inlet 216 and an outlet 218 of the second portion 204 of the fluid junction assembly 200. Gas is configured to flow from the second passage 212 through the opening 208 of the third passage 213 of the venting conduit 211, out the passage outlet 255 and into the inlet 216 of the second portion 204, through the fourth passage 214 and to and through the outlet 218. As will be detailed below, the outlet 218 may be configured to couple with a showerhead (e.g., via a showerhead stem, not shown). In some implementations, such as those where the second portion 204 includes a dielectric (e.g., ceramic) portion, the inlet 216 may be a dielectric portion inlet, and the outlet 218 may be a dielectric portion outlet.Attorney Docket No.: LAM1P117W0 / 12284-1WO

[0093] An example flowpath of a fluid (such as gas) indicated by a series of black arrows is shown to travel into the inlet 205 and through the first passage 206. An elongated outer channel forming the second passage 212 around the venting conduit 211 may allow the fluid to traverse upward and then downward through an elongated inner channel forming the third passage 213 in the venting conduit 211. As illustrated, the elongated outer channel has an inner surface 212a, and an outer surface 212b or a side wall, that are radially outwards and concentric of the stovepipe, which may also be considered a cylindrical conduit having an inner surface 211a or a side wall internal to at least a portion of the first portion 202. The area 217 between the outer surface 212b of the second passage 212 and the surface 212a of the venting conduit 211 is where gas may flow from the first passage 206 to the opening 208 of the venting conduit 211. In some cases, the fluid junction assembly 200 may not be metallic in its entirety in some embodiments described herein, as the second portion 204 may be constructed of dielectric (e.g., ceramic) material. Advantageously, this configuration of the first portion 202 and second portion 204 reduces dead volume by virtue of the venting conduit 211 while concurrently providing electrical isolation between components. The venting conduit 211 may be constructed to have linear features in some configurations so as to reduce or eliminate dead legs.

[0094] Example dimensions of some of the aforementioned components include 2.0-3.0 inches (e.g., 2.5 inches) for the length of the venting conduit 211, 0.05-0.25 inches (e.g., 0.1 inch) for the width of the outer channel forming the second passage 212. In some examples, the length of the second portion 204 between the inlet 216 and the outlet 218 may be at least 0.5 inches. That is, in some examples, metallic portions such as the first portion 202 and the showerhead (not shown) may be separated by at least 0.2 inches. However, in other examples, the distance between grounded and RF hot components may vary according to process conditions (e.g., RF power, precursors, gas pressure).

[0095] In some embodiments, the first portion 202 and the second portion 204 may be secured together using one or more components. For instance, as shown in Figure 2B, the second portion 204 may include a securing piece 203 (e.g., a ceramic plate) constructed to interface with the first portion 202. Such a securing piece may also beAttorney Docket No.: LAM1P117W0 / 12284-1WOdielectric, e.g., ceramic. In some implementations, the securing piece 203 may be a monolithic with the second portion 204. That is, the securing piece may not be a separate piece but rather a feature or part of the second portion 204. In some implementations, the securing piece may have one or more holes each sized to receive a corresponding connection feature 217a (e.g., screw) configured to secure the second portion 204 to the first portion 202. In some implementations, there may be multiple holes (e.g., hole 203a), at least one of them having a different diameter from at least one another (e.g., as shown by holes 203a and 203b in Figure 2D) so as to function as locating holes ensure the correct orientation when securing the connection feature 217a to the first portion 202, e.g., at corresponding bore 205a, which may have a diameter sized to enable threading with the corresponding connection feature 217a.

[0096] In some implementations, the holes may have a slightly larger diameter (e.g., 0.17 to 0.20 inches) to accommodate the corresponding connection features during thermal expansion and thermal contraction (e.g., during processing, plasma flow, or gas flow) without causing cracks in the ceramic material of the securing piece. For example, a first hole may have a first diameter, and a second hole may have a second diameter that is different from (smaller or larger than) the first diameter. The second diameter may be 5% smaller, 10% smaller, etc. but with an upper limit (e.g., 30%) to provide some stability among first portion 202, securing piece 203, second portion 204, and the connection feature 217a. The holes may be sized (e.g., larger than corresponding connection features) so as to allow relative movement between the first portion 202 and the second portion 204, which may be made of different materials (e.g., metallic and ceramic) and have different coefficients of thermal expansion. In some cases, one or more gaskets (e.g., rubber O-ring, washer) may be disposed about the second portion 204, e.g., between the first portion 202 and the second portion 204 and / or between the second portion 204 and the showerhead inlet (e.g., 107). In some cases, a load spreader may be used with the connection features and the securing piece to displace excess of stress into the ceramic from the connection features.

[0097] Figure 2C illustrates an isometric cross-sectional view of the fluid junction assembly 200, according to some embodiments. Figure 2D illustrates an exploded view thereof. Figures 2C and 2D illustrate the same fluid junction assembly 200 as shown inAttorney Docket No.: LAM1P117W0 / 12284-1WOFigures 2A and 2B. Similar to Figures 2A and 2B, first and second portions 202, 204 may be made of metal (e.g., aluminum) and a dielectric material (e.g., ceramic), respectively, and may be separable as shown. As can be seen from the Figure 2D view, the securing piece 203 associated with the second portion 204 may include multiple holes 203a and 203b, which in some implementations may have differing diameters. Corresponding bores of the first portion 202 (such as bore 205a shown in Figure 2B) may also have corresponding diameters that differ from one another. As also illustrated in Figures 2C and 2D, the venting conduit 211 may extend into the RPC valve 201 when the valve 201 is interfaced with the first portion. In some instances, the venting conduit 211 extends past, or is offset from, the valve interface 215.

[0098] In some implementations, another separate securing piece 223 may be used with the second portion 204. Referring briefly to Figure 2E, an isometric cross-sectional view of the fluid junction assembly 200 of Figures 2A and 2B is shown. In some examples, the securing piece 223 may be a metallic plate that further secures the second portion 204 to the first portion 202, e.g., using a connection feature 224 (e.g., a metallic threaded screw) shaped to extend through at least a portion of the second portion 204 (e.g., a hole 225 through the entire second portion 204 or a ledge feature of the second portion 204, which may form at least a part of securing piece 203) and / or another component of the fluid junction assembly 200) and be secured at a corresponding bore 226 (e.g., a threaded bore) at the first portion 202. In some cases, a hole 223a of the securing piece 223 and / or the hole 225 through the entire second portion 204 may be sized so as to be spacious enough for the connection feature 224 to be inserted with some space around the connection feature 224. For example, the connection feature 224 may have a diameter that is smaller than a diameter of the hole 223a and / or the hole 225. The diameter may be 5% smaller, 10% smaller, etc. This may allow relative movement of the first portion 204 and the second portion 204 during thermal expansion and contraction to occur at the second portion 204 without cracks or other defects forming as a result of having metallic portions (e.g., the connection feature 224) and ceramic portions expanding and contracting at different rates and coefficients. The securing piece 223 may advantageously dissipate force across a wider surface of the second portion 204 than the connection feature 224 and also provide a metal surface against which the connectionAttorney Docket No.: LAM1P117W0 / 12284-1WOfeature 224 may contact in order to prevent direct contact of the connection feature 224 with the dielectric second portion 204.

[0099] In some implementations, the securing piece 223 may be used with the securing piece 203 of the second portion 204 as shown in Figure 2D. That is, for example, a connection feature (such as 224) may be installed through hole 223a and hole 203a, along with a connection feature through hole 223b and hole 203b to secure with the first portion 202.

[0100] Figure 2F depicts another cross-sectional view of the fluid junction assembly 200 of Figures 2A and 2B, according to some embodiments. In some scenarios, such as when the first portion 202 and the second portion 204 are coupled together, and the RPC valve 201 is interfaced with the valve interface 215, remote plasma or RPC gas (whose flowpath is indicated in white arrows) may flow through the RPC valve 201 and the third passage 213, and out into the showerhead (not shown) through the outlet 218 (e.g., dielectric portion outlet of the second portion 204). In some scenarios, the remote plasma or RPC gas may flow to other parts of the fluid junction assembly 200, such as the second passage 212 and / or even the first passage 206. In some configurations, a valve (not shown) enabling access to a gas delivery system that may be fluidically connected to the first passage 206 via the first inlet 205 may be closed so as to prevent further backflow of plasma or gas. Additionally, the opening 208 of the venting conduit 211 may be close enough to an opening 232 of the RPC valve 201 (shown in Figures 2A and 2B) that backflow is minimized when remote plasma or RPC gas is introduced to the fluid junction assembly 200.

[0101] Figure 2G depicts a cross-sectional view of a portion of the fluid junction assembly of Figures 2A-2F, according to some embodiments. In some configurations, the outlet 218 may be configured to receive another component, such as a portion of a showerhead 106. Specifically, in some examples, the outlet 218 may be sized to receive the inlet 107 of the showerhead 106 which may be a tubular conduit or tubular stem of the showerhead 106. In some cases, the diameter of the outlet 218 and the fourth passage 214 of the second portion 204 may be approximately equal to that of the inlet 107 along the length of the fourth passage 214. However, in some implementations, as shown in Figure 2H, the diameter of the fourth passage 214 may vary along its length soAttorney Docket No.: LAM1P117W0 / 12284-1WOas to be tapered, which may further secure the inlet 107 and / or allow interfacing with different components that may have different widths / diameters or variable widths / diameters along its length.

[0102] In some implementations, some aspects of the fluid junction assembly may differ than provided herein. This may include one or more features configured to cause a rotation, or swirling, of gases around the venting conduit and in some cases around and in an axial direction, such as upwards towards the opening of venting conduit. For example, the first passage may be offset at an angle with respect to the venting conduit which may also be considered oriented along an axis perpendicular to, but not intersecting with, the center axis of the venting conduit. In an alternative or further example, the second passage may have an end with a partial spiral surface that partially, not fully, encircles the venting conduit and is configured to cause gases to swirl or flow around the venting conduit.

[0103] Figure 4A depicts a cross-sectional side view of another example first portion of a fluid junction assembly. The first portion 402 may be considered a metallic portion, such as comprised of a metal or metal alloy,. The first portion 402 has some of the same features as the first portion 202 provided above and that discussion is incorporated herein. For example, the first portion 402 has a first passage 406 that extends through the first portion 402 and terminates at the second passage 412. The first portion 402 also has the venting conduit 411 within the second passage 412 that has an opening 408, that extends along a center axis 409, and that is radially inwards of the outer surface 412b of the second passage 412. The venting conduit 411 may be considered coaxial with the second passage 412. The area 417 between the outer surface 412b of the second passage 412 and the surface 412a of the venting conduit 411 is where gas may flow from the first passage 406 to the opening 408 of the venting conduit 411. The venting conduit 411 also defines the third passage 413 and the passage outlet 418 which may be the first outlet of the first portion 402.

[0104] In some implementations, the second passage 412 may have a partial spiral surface 419 configured, in part, to cause circular and axial flow of gas within the second passage 412, such as the area 417. Here in Figure 4A, the second passage 412 has a first passage end 421 and a second passage end 425 opposite the first passage end 421. TheAttorney Docket No.: LAM1P117W0 / 12284-1WOfirst passage end 421 may terminate at the valve interface 415 and may terminate at a portion end 423 of the first portion 402 which has the valve interface 415 and a portion end surface 453 through which the second passage 412 extends. In some cases, when viewed perpendicular to the center axis 409 like in Figure 4A, the opening 408 of the venting conduit 411 is offset from the first passage end 421 of the second passage 412, or from the portion end surface 453, by an offset distance OD1. The first portion 202 of Figures 2A-2G may be configured in the same manner and such configurations may allow for the interface with the valve and create a flowpath for gas to flow from the second passage 212 or 412 and into the opening 208 or 408.

[0105] The second passage 412 may be near, or proximate to, the passage outlet 455 of the first portion 402. The second passage end 425 may have the partial spiral surface 419. This partial spiral surface 419 extends partially, not fully, around the venting conduit 411 and center axis 409 and extends along some of the center axis 409 for a height H. For instance, as the partial spiral surface 419 rotates about the center axis 409, its distance from the passage outlet 455 along the center axis 409 changes or varies. As shown in Figure 4A, the partial spiral surface 419 is nonplanar.

[0106] In some instances, the partial spiral surface 419 may be considered to follow a single helical path or pathway. Figure 5 depicts an example helical pathway. Here, an x-y-z coordinate system is shown along with a three-dimensional helix shape 551, or helical pathway 551, rotating around the z-axis and shown with a dashed line. Each full 360 degree rotation of helical pathway 551 around the z-axis is offset along the z-axis by the pitch P. With respect to the first portion 402 and the partial spiral surface 419, the z-axis may represent the center axis 409 and the partial spiral surface 419 follows such a helical or spiral pathway and does not make a full 360 degree rotation around the center axis 409. For instance, the partial spiral surface 419 may rotate around the center axis 409 by about 340 degrees or less, about 320 degrees or less, about 300 degrees or left, about 270 degrees or less, about 250 degrees or less, about 230 degrees or less, about 200 degrees or less, about 180 degrees or less, about 160 degrees or less, about 140 degrees or less, about 120 degrees or less, or about 100 degrees or less, for example.

[0107] Referring back to Figure 4A, the partial spiral surface 419 is configured toAttorney Docket No.: LAM1P117W0 / 12284-1WOcause, at least in part, the gas flowing from the first passage 406 into the second passage 412 to rotate around the venting conduit 411 and flow axially in a direction parallel to the center axis 409. In some cases, the axial direction is indicated by arrow DI which is parallel to the center axis 409 and towards the opening 408 of the venting conduit 411. The rotational and axial movement of the gas flow is indicated by dashed arrows Al.

[0108] In some implementations, the first passage may be configured to cause, at least in part, gas to flow around the venting conduit. Figure 4B depicts a cross-sectional top view of the first portion of Figure 4A. Here, the venting conduit 411 is within the second passage 412 and radially inwards of, and coaxial to, the outer surface 412b of the second passage 412. The view of Figure 4A is parallel to the center axis 409 of the venting conduit 411 which is illustrated as an "X" here. As can be seen in Figure 4B, the first passage 406 extends along a first axis 427 that is perpendicular to, but does not intersect with, the center axis 409. In some cases, the center axis 409 and the first axis 427 may be considered skew axes which are nonparallel to each other and do not intersect with each other. In some instances, the first axis 427 may be considered perpendicular to the center axis 409 and offset from the center axis 409 in a radial direction by a first radius Rl.

[0109] In some implementations, configuration of the first passage 406 may be with respect to a face of the first portion 402. For instance, in Figure 4B the first portion 402 may have a first face 431 and the first inlet 405 and the first passage 406 may extend through the first face 431. The first axis 427 may be oriented at a non-perpendicular angle 01 with respect to the first face 431. This non-perpendicular angle 01 may be greater than 90 degrees and less than 180 degrees, which may be considered an obtuse angle, such as about 95 degrees or greater, about 100 degrees or greater, about 115 degrees or greater, about 130 degrees or greater, about 145 or greater, or about 160 degrees or greater.

[0110] As further illustrated in Figure 4B, the partial spiral surface 419 is highlighted with shading and spans between a start point SP1 and an end point EPl. The partial spiral surface 419 can be seen extending around only a part of the center axis 409. In some cases, like shown in Figure 4B, the end point EPl may be located at the first passage 406. This may result in the partial spiral surface 419 terminating at the firstAttorney Docket No.: LAM1P117W0 / 12284-1WOpassage 406. In some other instances, not shown here, the start point SP1 of the partial spiral surface 419 may also be located at the first passage 406 such that the partial spiral surface 419 spans between, or starts and stops, at the first passage 406. In some implementations like described above, the partial spiral surface 419 extends around the center axis 409 by an arc less than 360 degrees, such as about 340 degrees or less, about 320 degrees or less, about 300 degrees or left, about 270 degrees or less, about 250 degrees or less, about 230 degrees or less, about 200 degrees or less, about 180 degrees or less, about 160 degrees or less, about 140 degrees or less, about 120 degrees or less, or about 100 degrees or less, for example.

[0111] The configuration of the first passage, the partial spiral surface, or both, shown in Figures 4A and 4B may cause gas flowing from the first inlet 405 and into and through the first passage 406 to flow around the venting conduit 411 in the area 417 of the second passage 412. For instance, example gas flow around the venting conduit 411 is shown with black arrows Al in Figure 4B. This configuration may advantageously eliminate or reduce unwanted dead legs or dead areas where gas may not flow and thereby improving purging abilities and improving flow uniformity. Further, the flow around, and axially along, the venting conduit may also improve flow conductance through the fluid junction assembly.

[0112] In some implementations, the fluid junction assembly may have a first gas connector configured to connect with a gas line. The first gas connector and the first passage may both have the same internal diameter which is configured to reduce or eliminate unwanted flow restrictions or expansions which may cause unwanted flow fluctuations. Figure 4C depicts the cross-sectional top view of the first portion of Figure 4B along with a first connector. For clarity, some of the reference indicators of Figure 4B have been removed. The first connector 433 is coupled with the first portion 402, which may be at, near, or directly to the first face 431. In some other cases, the first connector 433 may be coupled to a plate, not shown, which is coupled to the first face 431. The first connector 433 has a connector passage 435 fluidically connected to the first inlet 405 and the first passage 406, and with a first inner diameter of I DI. The first inlet 405 has an inlet diameter that is the same as the first inner diameter I DI, and the first passage 406 also has a first passage diameter that is the same as the first inner diameter I DI. By having these three components with the same inner diameters, gasAttorney Docket No.: LAM1P117W0 / 12284-1WOmay flow without unwanted restrictions or expansions through the first connector 433 and into the first passage 406 which may advantageously provide uniform flow with a high conductance. In some implementations, the first connector 433 may be comprised of a metal or metal alloy. In some cases, the first connector 433 may be made of stainless steel and configured to provide a threaded connection to a gas line.

[0113] In some implementations, like shown, the connector passage 435 extends along a connector axis 437. The connector axis 437 and the first passage axis 427 may be oriented at an angle 02 with respect to each other. This angle 02 may be obtuse which is greater than 90 degrees and less than 180 degrees, for instance, such as at least 100 degrees, at least 115 degrees, at least 130 degrees, at least 145 degrees or at least 160 degrees. The connector axis 437 may be perpendicular to the center axis 409 and, in some cases, may also intersect the center axis 409.

[0114] Similar to Figures 2A-2G, the first portion 402 is configured to be coupled with the valve 401 and the second portion 404 which is a dielectric configured to provide electrical isolation between the metallic first portion 402 and a showerhead. Figure 4D depicts a cross-sectional side view of another example fluid junction assembly 400. Here, the fluid junction assembly 400 includes the first portion 402 above and shown in Figures 4A-4C as well as the first connector 433. The valve 401 is coupled with the valve interface 415 at the portion end 423 of the first portion 402. As provided above, when the valve 401 is interfaced with the valve interface 415, the valve 401 provides a fluidic connection between the second passage 412 and the third passage 413. Gas, which is illustrated by black arrows, is configured to flow through the first connector 433 into the first passage 406 through the first inlet 405. The gas flows from the first passage 406 into the second passage 412 and the partial spiral surface 419 along with the configuration of the first passage 406 cause the gas to flow around the venting conduit 411 and in the axial direction DI towards opening 408. With the valve 401 providing a fluidic connection in an area 457 between the first passage end 421 of the second passage 412 and the opening 408 of the third passage 413, the gas in the second passage 412 can flow into the opening 408, through the third passage 413, out the outlet 455 and to inlet 416 of the fourth passage 414, and out the outlet 418. As can be seen, the gas flowing from the opening 408 to the outlet 455 may flow in a general axial direction D2 parallel to the center axis 409 and in the opposite direction of DI.Attorney Docket No.: LAM1P117W0 / 12284-1WOApparatus

[0115] Figure 3 shows a schematic view of an implementation of a multi-station processing tool (or system) 300 with an inbound load lock 302 and an outbound load lock 304, either or both of which may comprise a remote plasma source. A robot 306, at atmospheric pressure, is configured to move wafers from a cassette loaded through a pod 308 into inbound load lock 302 via an atmospheric port 310. A wafer is placed by the robot 306 on a pedestal 312 in the inbound load lock 302, the atmospheric port 310 is closed, and the load lock is pumped down. Where the inbound load lock 302 comprises a remote plasma source, the wafer may be exposed to a remote plasma treatment in the load lock prior to being introduced into a processing chamber 314. Further, the wafer also may be heated in the inbound load lock 302 as well, for example, to remove moisture and adsorbed gases. Next, a chamber transport port 316 to processing chamber 314 is opened, and another robot (not shown) places the wafer into the reactor on a pedestal of a first station shown in the reactor for processing. While the implementation depicted in Figure 3 includes load locks, it will be appreciated that, in some implementations, direct entry of a wafer into a process station may be provided.

[0116] The depicted processing chamber 314 comprises four process stations, numbered from 1 to 4 in the implementation shown in Figure 3. Each station has a heated pedestal (shown at 318 for station 1), and gas line inlets. It will be appreciated that in some implementations, each process station may have different or multiple purposes. While the depicted processing chamber 314 comprises four stations, it will be understood that a processing chamber according to the present disclosure may have any suitable number of stations. For example, in some implementations, a processing chamber may have five or more stations, while in other implementations a processing chamber may have three or fewer stations.

[0117] Figure 3 also depicts an implementation of a wafer handling system 390 for transferring wafers within processing chamber 314. In some implementations, wafer handling system 390 may transfer wafers between various process stations and / or between a process station and a load lock. It will be appreciated that any suitable wafer handling system may be employed. Non-limiting examples include wafer carousels and wafer handling robots. Figure 3also depicts an implementation of a system controller 350Attorney Docket No.: LAM1P117W0 / 12284-1WOemployed to control process conditions and hardware states of process tool 300. System controller 350 may include one or more memory devices 356, one or more mass storage devices 354, and one or more processors 352. Processor 352 may include a CPU or computer, analog and / or digital input / output connections, stepper motor controller boards, etc.

[0118] In some implementations, system controller 350 controls all of the activities of process tool 300. System controller 350 executes system control software 358 stored in mass storage device 354, loaded into memory device 356, and executed on processor 352. System control software 358 may include instructions for controlling the timing, mixture of gases, chamberand / orstation pressure, chamber and / or station temperature, purge conditions and timing, wafer temperature, RF power levels, RF frequencies, substrate, pedestal, chuck and / or susceptor position, and other parameters of a particular process performed by process tool 300. System control software 358 may be configured in any suitable way. For example, various process tool component subroutines or control objects may be written to control operation of the process tool components necessary to carry out various process tool processes in accordance with the disclosed methods. System control software 358 may be coded in any suitable computer readable programming language.

[0119] In some implementations, system control software 358 may include input / output control (IOC) sequencing instructions for controlling the various parameters described above. For example, each phase of a PEALD process may include one or more instructions for execution by system controller 350. The instructions for setting process conditions for a PEALD process phase may be included in a corresponding PEALD recipe phase. In some implementations, the PEALD recipe phases may be sequentially arranged, so that all instructions for a PEALD process phase are executed concurrently with that process phase.

[0120] Other computer software and / or programs stored on mass storage device 354 and / or memory device 356 associated with system controller 350 may be employed in some implementations. Examples of programs or sections of programs for this purpose include a substrate positioning program, a process gas control program, a pressure control program, a heater control program, and a plasma control program.Attorney Docket No.: LAM1P117W0 / 12284-1WO

[0121] The system 300 may have any of the features provided above, such as the first and second cleaning gas flowpaths, as well as the gas injection manifold. The system 300 may also be configured to execute any of the techniques provided herein.

[0122] A substrate positioning program may include program code for process tool components that are used to load the substrate onto pedestal 318 and to control the spacing between the substrate and other parts of process tool 300.

[0123] A process gas control program may include code for controlling gas composition and flow rates and optionally for flowing gas into one or more process stations prior to deposition in order to stabilize the pressure in the process station. The process gas control program may include code for controlling gas composition and flow rates within any of the disclosed ranges. A pressure control program may include code for controlling the pressure in the process station by regulating, for example, a throttle valve in the exhaust system of the process station, a gas flow into the process station, etc. The pressure control program may include code for maintaining the pressure in the process station within any of the disclosed pressure ranges.

[0124] A heater control program may include code for controlling the current to a heating unit that is used to heat the substrate. Alternatively, the heater control program may control delivery of a heat transfer gas (such as helium) to the substrate. The heater control program may include instructions to maintain the temperature of the substrate within any of the disclosed ranges.

[0125] A plasma control program may include code for setting RF power levels and frequencies applied to the process electrodes in one or more process stations, for example using any of the RF power levels disclosed herein. The plasma control program may also include code for controlling the duration of each plasma exposure.

[0126] In some implementations, there may be a user interface associated with system controller 350. The user interface may include a display screen, graphical software displays of the apparatus and / or process conditions, and user input devices such as pointing devices, keyboards, touch screens, microphones, etc.

[0127] In some implementations, parameters adjusted by system controller 350 may relate to process conditions. Non-limiting examples include process gas composition andAttorney Docket No.: LAM1P117W0 / 12284-1WOflow rates, temperature, pressure, plasma conditions (such as RF power levels, frequency, and exposure time), etc. These parameters may be provided to the user in the form of a recipe, which may be entered utilizing the user interface.

[0128] Signals for monitoring the process may be provided by analog and / or digital input connections of system controller 350 from various process tool sensors. The signals for controlling the process may be output on the analog and digital output connections of process tool 300. Non-limiting examples of process tool sensors that may be monitored include mass flow controllers, pressure sensors (such as manometers), thermocouples, etc. Appropriately programmed feedback and control algorithms may be used with data from these sensors to maintain process conditions.

[0129] Similarly, in some implementations, the controller 350 is part of a system, which may be part of the above-described examples. Such systems can include semiconductor processing equipment, including a processing tool or tools, chamber or chambers, a platform or platforms for processing, and / or specific processing components (a wafer pedestal, a gas flow system, etc.). These systems may be integrated with electronics for controlling their operation before, during, and after processing of a semiconductor wafer or substrate. The electronics may be referred to as the "controller," which may control various components or subparts of the system or systems. The controller 350, depending on the processing requirements and / or the type of system, may be programmed to control any of the processes disclosed herein, including the delivery of processing gases, temperature settings (e.g., heating and / or cooling), pressure settings, vacuum settings, power settings, radio frequency (RF) generator settings in some systems, RF matching circuit settings, frequency settings, flow rate settings, fluid delivery settings, positional and operation settings, wafer transfers into and out of a tool and other transfer tools and / or load locks connected to or interfaced with a specific system.

[0130] Broadly speaking, the controller may be defined as electronics having various integrated circuits, logic, memory, and / or software that receive instructions, issue instructions, control operation, enable cleaning operations, enable endpoint measurements, and the like. The integrated circuits may include chips in the form of firmware that store program instructions, digital signal processors (DSPs), chips defined as application specific integrated circuits (ASICs), and / or one or more microprocessors,Attorney Docket No.: LAM1P117W0 / 12284-1WOor microcontrollers that execute program instructions (e.g., software). Program instructions may be instructions communicated to the controller in the form of various individual settings (or program files), defining operational parameters for carrying out a particular process on or for a semiconductor wafer or to a system. The operational parameters may, in some implementations, be part of a recipe defined by process engineers to accomplish one or more processing steps during the fabrication of one or more layers, materials, metals, oxides, silicon, silicon dioxide, surfaces, circuits, and / or dies of a wafer.

[0131] The controller, in some implementations, may be a part of or coupled to a computer that is integrated with, coupled to the system, otherwise networked to the system, or a combination thereof. For example, the controller may be in the "cloud" or all or a part of a fab host computer system, which can allow for remote access of the wafer processing. The computer may enable remote access to the system to monitor current progress of fabrication operations, examine a history of past fabrication operations, examine trends or performance metrics from a plurality of fabrication operations, to change parameters of current processing, to set processing steps to follow a current processing, or to start a new process. In some examples, a remote computer (e.g. a server) can provide process recipes to a system over a network, which may include a local network or the Internet. The remote computer may include a user interface that enables entry or programming of parameters and / or settings, which are then communicated to the system from the remote computer. In some examples, the controller receives instructions in the form of data, which specify parameters for each of the processing steps to be performed during one or more operations. It should be understood that the parameters may be specific to the type of process to be performed and the type of tool that the controller is configured to interface with or control. Thus as described above, the controller may be distributed, such as by comprising one or more discrete controllers that are networked together and working towards a common purpose, such as the processes and controls described herein. An example of a distributed controller for such purposes would be one or more integrated circuits on a chamber in communication with one or more integrated circuits located remotely (suchAttorney Docket No.: LAM1P117W0 / 12284-1WOas at the platform level or as part of a remote computer) that combine to control a process on the chamber.

[0132] Without limitation, example systems may include a plasma etch chamber or module, a deposition chamber or module, a spin-rinse chamber or module, a metal plating chamber or module, a clean chamber or module, a bevel edge etch chamber or module, a physical vapor deposition (PVD) chamber or module, a chemical vapor deposition (CVD) chamber or module, an atomic layer deposition (ALD) chamber or module, an atomic layer etch (ALE) chamber or module, an ion implantation chamber or module, a track chamber or module, and any other semiconductor processing systems that may be associated or used in the fabrication and / or manufacturing of semiconductor wafers.

[0133] As noted above, depending on the process step or steps to be performed by the tool, the controller might communicate with one or more of other tool circuits or modules, other tool components, cluster tools, other tool interfaces, adjacent tools, neighboring tools, tools located throughout a factory, a main computer, another controller, or tools used in material transport that bring containers of wafers to and from tool locations and / or load ports in a semiconductor manufacturing factory.

[0134] Broadly speaking, the controller may be defined as electronics having various integrated circuits, logic, memory, and / or software that receive instructions, issue instructions, control operation, enable cleaning operations, enable endpoint measurements, and the like. The integrated circuits may include chips in the form of firmware that store program instructions, digital signal processors (DSPs), chips defined as application specific integrated circuits (ASICs), and / or one or more microprocessors, or microcontrollers that execute program instructions (e.g., software). Program instructions may be instructions communicated to the controller in the form of various individual settings (or program files), defining operational parameters for carrying out a particular process on or for a semiconductor wafer or to a system. The operational parameters may, in some implementations, be part of a recipe defined by process engineers to accomplish one or more processing steps during the fabrication of one or more layers, materials, metals, oxides, silicon, silicon dioxide, surfaces, circuits, and / or dies of a wafer.Attorney Docket No.: LAM1P117W0 / 12284-1WO

[0135] The controller, in some implementations, may be a part of or coupled to a computer that is integrated with, coupled to the system, otherwise networked to the system, or a combination thereof. For example, the controller may be in the "cloud" or all or a part of a fab host computer system, which can allow for remote access of the wafer processing. The computer may enable remote access to the system to monitor current progress of fabrication operations, examine a history of past fabrication operations, examine trends or performance metrics from a plurality of fabrication operations, to change parameters of current processing, to set processing steps to follow a current processing, or to start a new process. In some examples, a remote computer (e.g. a server) can provide process recipes to a system over a network, which may include a local network or the Internet. The remote computer may include a user interface that enables entry or programming of parameters and / or settings, which are then communicated to the system from the remote computer. In some examples, the controller receives instructions in the form of data, which specify parameters for each of the processing steps to be performed during one or more operations. It should be understood that the parameters may be specific to the type of process to be performed and the type of tool that the controller is configured to interface with or control. Thus as described above, the controller may be distributed, such as by comprising one or more discrete controllers that are networked together and working towards a common purpose, such as the processes and controls described herein. An example of a distributed controller for such purposes would be one or more integrated circuits on a chamber in communication with one or more integrated circuits located remotely (such as at the platform level or as part of a remote computer) that combine to control a process on the chamber.

[0136] Without limitation, example systems may include a plasma etch chamber or module, a deposition chamber or module, a spin-rinse chamber or module, a metal plating chamber or module, a clean chamber or module, a bevel edge etch chamber or module, a physical vapor deposition (PVD) chamber or module, a chemical vapor deposition (CVD) chamber or module, an ALD chamber or module, an ALE chamber or module, an ion implantation chamber or module, a track chamber or module, and anyAttorney Docket No.: LAM1P117W0 / 12284-1WOother semiconductor processing systems that may be associated or used in the fabrication and / or manufacturing of semiconductor wafers.

[0137] As noted above, depending on the process step or steps to be performed by the tool, the controller might communicate with one or more of other tool circuits or modules, other tool components, cluster tools, other tool interfaces, adjacent tools, neighboring tools, tools located throughout a factory, a main computer, another controller, or tools used in material transport that bring containers of wafers to and from tool locations and / or load ports in a semiconductor manufacturing factory.

[0138] Unless otherwise specified, the illustrated implementations are to be understood as providing example features of varying detail of some implementations. Thus, unless otherwise specified, the features, components, modules, layers, films, regions, aspects, structures, etc. (hereinafter individually or collectively referred to as an "element" or "elements"), of the various illustrations may be otherwise combined, separated, interchanged, and / or rearranged without departing from the teachings of the disclosure.

[0139] The terminology used herein is for the purpose of describing some implementations and is not intended to be limiting. As used herein, the singular forms, "a," "an," and "the" are intended to include the plural forms as well, unless the context clearly indicates otherwise. It is also to be understood that the phrases "for each <item> of the one or more <items>," "each <item> of the one or more <items>," and / or the like, if used herein, are inclusive of both a single-item group and multiple-item groups, i.e., the phrase "for . . . each" is used in the sense that it is used in programming languages to refer to each item of whatever population of items is referenced. For example, if the population of items referenced is a single item, then "each" would refer to only that single item (despite dictionary definitions of "each" frequently defining the term to refer to "every one of two or more things") and would not imply that there must be at least two of those items. Similarly, the term "set" or "subset" should not be viewed, in itself, as necessarily encompassing a plurality of items— it is to be understood that a set or a subset can encompass only one member or multiple members (unless the context indicates otherwise). In addition, the terms "comprises," "comprising," "includes," and / or "including," when used in this specification, specify the presence of statedAttorney Docket No.: LAM1P117W0 / 12284-1WOfeatures, integers, steps, operations, elements, components, and / or groups thereof, but do not preclude the presence or addition of one or more other features, integers, steps, operations, elements, components, and / or groups thereof., but do not preclude the presence or addition of one or more other features, integers, steps, operations, elements, components, and / or groups thereof. It is also noted that, as used herein, the terms "substantially," "about," and other similar terms, are used as terms of approximation and not as terms of degree, and, as such, are utilized to account for inherent deviations in measured, calculated, and / or provided values that would be recognized by one of ordinary skill in the art. Accordingly, the term "substantially" as used herein, unless otherwise specified, may mean within 5% of a referenced value. For example, "substantially perpendicular" may mean within ±5% of parallel.

[0140] The use of cross-hatching and / or shading in the accompanying drawings is generally provided to clarify boundaries between adjacent elements. As such, neither the presence nor the absence of cross-hatching or shading conveys or indicates any preference or requirement for particular materials, material properties, dimensions, proportions, commonalities between illustrated elements, and / or any other characteristic, attribute, property, etc., of the elements, unless specified. Further, in the accompanying drawings, the size and relative sizes of elements may be exaggerated for clarity and / or descriptive purposes. As such, the sizes and relative sizes of the respective elements are not necessarily limited to the sizes and relative sizes shown in the drawings. When an implementation may be implemented differently, a specific process order may be performed differently from the described order. For example, two consecutively described processes may be performed substantially at the same time or performed in an order opposite to the described order.

[0141] When an element, such as a layer, is referred to as being "on," "connected to," or "coupled to" another element, it may be directly on, directly connected to, or directly coupled to the other element or at least one intervening element may be present. When, however, an element is referred to as being "directly on," "directly connected to," or "directly coupled to" another element, there are no intervening elements present. Other terms and / or phrases if used herein to describe a relationship between elements should be interpreted in a like fashion, such as "between" versus "directly between," "adjacent"Attorney Docket No.: LAM1P117W0 / 12284-1WOversus "directly adjacent," "on" versus "directly on," etc. Further, the term "connected" may refer to physical, electrical, and / or fluid connection. To this end, for the purposes of this disclosure, the phrase "fluidically connected" is used with respect to volumes, plenums, holes, etc., that may be connected to one another, either directly or via one or more intervening components or volumes, to form a fluidic connection, similar to how the phrase "electrically connected" is used with respect to components that are connected to form an electric connection. The phrase "fluidically interposed," if used, may be used to refer to a component, volume, plenum, hole, etc., that is fluidically connected with at least two other components, volumes, plenums, holes, etc., such that fluid flowing from one of those other components, volumes, plenums, holes etc., to the other or another of those components, volumes, plenums, holes, etc., would first flow through the "fluidically interposed" component before reaching that other or another of those components, volumes, plenums, holes, etc.. For example, if a pump is fluidically interposed between a reservoir and an outlet, fluid flowing from the reservoir to the outlet would first flow through the pump before reaching the outlet. The phrase "fluidically adjacent," if used, refers to placement of a fluidic element relative to another fluidic element such that no potential structures fluidically are interposed between the two elements that might potentially interrupt fluid flow between the two fluidic elements. For example, in a flowpath having a first valve, a second valve, and a third valve arranged sequentially therealong, the first valve would be fluidically adjacent to the second valve, the second valve fluidically adjacent to both the first and third valves, and the third valve fluidically adjacent to the second valve.

[0142] For the purposes of this disclosure, "at least one of X, Y, . . ., and Z" and "at least one selected from the group consisting of X, Y, . . ., and Z" may be construed as X only, Y only, . . ., Z only, or any combination of two or more of X, Y, . . ., and Z, such as, for instance, XYZ, XYY, YZ, and ZZ. As used herein, the term "and / or" includes any and all combinations of one or more of the associated listed items.

[0143] Although the terms "first," "second," "third," etc., may be used herein to describe various elements, these elements should not be limited by these terms. These terms are used to distinguish one element from another element. Thus, a first element discussed below could be termed a second element without departing from the teachingsAttorney Docket No.: LAM1P117W0 / 12284-1WOof the disclosure. To this end, use of such identifiers, e.g., "a first element," should not be read as suggesting, implicitly or inherently, that there is necessarily another instance, e.g., "a second element." Further, the use, if any, of ordinal indicators, such as (a), (b), (c), . . ., or (1), (2), (3), . . ., or the like, in this disclosure and accompanying claims, is to be understood as not conveying any particular order or sequence, except to the extent that such an order or sequence is explicitly indicated. For example, if there are three steps labeled (i), (ii), and (iii), it is to be understood that these steps may be performed in any order (or even concurrently, if not otherwise contraindicated), unless indicated otherwise. For example, if step (ii) involves the handling of an element that is created in step (i), then step (ii) may be viewed as happening at some point after step (i). In a similar manner, if step (i) involves the handling of an element that is created in step (ii), the reverse is to be understood.

[0144] Spatially relative terms, such as "beneath," "below," "under," "lower," "above," "upper," "over," "higher," "side" (e.g., as in "sidewall"), and the like, may be used herein for descriptive purposes, and, thereby, to describe one element's spatial relationship to at least one other element as illustrated in the drawings. Spatially relative terms are intended to encompass different orientations of an apparatus in use, operation, and / or manufacture in addition to the orientation depicted in the drawings. For example, if the apparatus in the drawings is turned over, elements described as "below" or "beneath" other elements or features would then be oriented "above" or "over" the other elements or features. Thus, the term "below" can encompass both an orientation of above and below. Furthermore, the apparatus may be otherwise oriented (e.g., rotated 90 degrees or at other orientations), and, as such, the spatially relative descriptors used herein interpreted accordingly.

[0145] The term "between," as used herein and when used with a range of values, is to be understood, unless otherwise indicated, as being inclusive of the start and end values of that range. For example, between 1 and 5 is to be understood as inclusive of the numbers 1, 2, 3, 4, and 5, not just the numbers 2, 3, and 4.

[0146] As used herein, the phrase "operatively connected" is to be understood as referring to a state in which two components and / or systems are connected, either directly or indirectly, such that, for example, at least one component or system canAttorney Docket No.: LAM1P117W0 / 12284-1WOcontrol the other. For instance, a controller may be described as being operatively connected with (or to) a resistive heating unit, which is inclusive of the controller being connected with a sub-controller of the resistive heating unit that is electrically connected with a relay that is configured to controllably connect or disconnect the resistive heating unit with a power source that is capable of providing an amount of power that is able to power the resistive heating unit so as to generate a desired degree of heating. The controller itself likely will not supply such power directly to the resistive heating unit due to the current(s) involved, but it is to be understood that the controller is nonetheless operatively connected with the resistive heating unit.

[0147] Various implementations are described herein with reference to sectional views, isometric views, perspective views, plan views, and / or exploded illustrations that are schematic depictions of idealized implementations and / or intermediate structures. As such, variations from the shapes of the illustrations as a result of, for example, manufacturing techniques and / or tolerances, are to be expected. Thus, implementations disclosed herein should not be construed as limited to the particular illustrated shapes of regions, but are to include deviations in shapes that result from, for instance, manufacturing. To this end, regions illustrated in the drawings may be schematic in nature and shapes of these regions may not reflect the actual shapes of regions of a device, and, as such, are not intended to be limiting.

[0148] Unless otherwise defined, all terms (including technical and scientific terms) used herein have the same meaning as commonly understood by one of ordinary skill in the art to which this disclosure is a part. Terms, such as those defined in commonly used dictionaries, should be interpreted as having a meaning that is consistent with their meaning in the context of the relevant art and are not to be interpreted in an idealized or overly formal sense, unless expressly so defined herein.

[0149] As customary in the field, some implementations are described and illustrated in the accompanying drawings in terms of functional blocks, units, and / or modules. Those skilled in the art will appreciate that these blocks, units, and / or modules are physically implemented by electronic (or optical) circuits, such as logic circuits, discrete components, microprocessors, hard-wired circuits, memory elements, wiring connections, and the like, which may be formed using semiconductor-based fabricationAttorney Docket No.: LAM1P117W0 / 12284-1WOtechniques or other manufacturing technologies. In the case of the blocks, units, and / or modules being implemented by microprocessors or other similar hardware, they may be programmed and controlled using software (e.g., microcode) to perform various functions discussed herein and may optionally be driven by firmware and / or software. It is also contemplated that each block, unit, and / or module may be implemented by dedicated hardware, or as a combination of dedicated hardware to perform some functions and a processor (e.g., one or more programmed microprocessors and associated circuitry) to perform other functions. Also, each block, unit, and / or module of some implementations may be physically separated into two or more interacting and discrete blocks, units, and / or modules without departing from the inventive concepts. Further, the blocks, units, and / or modules of some implementations may be physically combined into more complex blocks, units, and / or modules without departing from the teachings of the disclosure.

[0150] Although the foregoing implementations have been described in some detail for purposes of clarity of understanding, it will be apparent that certain changes and modifications may be practiced within the scope of the appended claims. It should be noted that there are many alternative ways of implementing the processes, systems, and apparatuses of the disclosed implementations. Accordingly, implementations are to be considered as illustrative and not as restrictive, and implementations are not to be limited to the details given herein.

[0151] It is to be understood that the above disclosure, while focusing on a particular example implementation or implementations, is not limited to only the discussed example, but may also apply to similar variants and mechanisms as well, and such similar variants and mechanisms are also considered to be within the scope of this disclosure. For example, the above disclosure is directed to at least, but not exclusively, the following numbered implementations.

[0152] Implementation 1: A fluid junction assembly for semiconductor processing, the fluid junction assembly comprising:a metallic portion comprising:a first inlet,a first outlet,Attorney Docket No.: LAM1P117W0 / 12284-1WOa valve interface configured to receive a valve,a first passage fluidically connected to the first inlet and terminating at a second passage, the second passage fluidically connected to the first passage and extending partially through the metallic portion and terminating at the valve interface, anda venting conduit that:extends within and is coaxial to the second passage,has a first end inside the metallic portion and a second end offset from the valve interface, the first end defining an opening, andhas a cylindrical shape partially defining a third passage that extends through the venting conduit from the opening and through the metallic portion to the first outlet; anda dielectric portion comprising a dielectric portion inlet, a dielectric portion outlet, and a fourth passage spanning through the dielectric portion and fluidically connecting the dielectric portion inlet and the dielectric portion outlet, and configured to removably couple with the metallic portion and fluidically connect the first outlet to the dielectric portion inlet.

[0153] Implementation 2: The fluid junction assembly of implementation 1, wherein:the venting conduit extends along a center axis, andthe first passage extends along a first axis that is perpendicular to the center axis and does not interest with the center axis.

[0154] Implementation 3: The fluid junction assembly of implementation 1 or implementation 2, wherein:the metallic portion includes a first face, andthe first passage extends through the first face and along a first axis that is oriented at a non-perpendicular angle with respect to the first face.

[0155] Implementation 4: The fluid junction assembly of implementation 3, wherein the non-perpendicular angle is greater than 90 degrees.Attorney Docket No.: LAM1P117W0 / 12284-1WO

[0156] Implementation 5: The fluid junction assembly of any of implementations 1-4, further comprising a first gas connector coupled to the metallic portion and fluidically connected to the first inlet, wherein:the first gas connector has a connector passage fluidically connected to the first inlet and having a first inner diameter,the first inlet has an inlet diameter that is the same as the first inner diameter, andthe first passage has a first passage diameter that is the same as the first inner diameter.

[0157] Implementation 6: The fluid junction assembly of implementation 5, wherein:the connector passage extends along a connector axis, andthe first passage extends along a first passage axis that is oriented at an obtuse angle with respect to the connector axis.

[0158] Implementation 7: The fluid junction assembly of any of implementations 1-6, wherein:the second passage has a first passage end that terminates at the valve interface and a second passage end opposite the first passage, andthe second passage end has a partial spiral surface that extends partially around the venting conduit.

[0159] Implementation 8: The fluid junction assembly of implementation 7, wherein the partial spiral surface extends less than 360 degrees around the venting conduit.

[0160] Implementation 9: The fluid junction assembly of any implementations 1-8, wherein:the metallic portion has a portion end having the valve interface,the venting conduit extends along a center axis, andwhen viewed perpendicular to the center axis, the opening of the venting conduit is offset from the portion end by a first offset distance.

[0161] Implementation 10: The fluid junction assembly of any of implementations 1-9, wherein when a valve is interfaced with the valve interface, the fluid junction assembly is configured to enable fluid to flow through the first inlet of the metallic portion to theAttorney Docket No.: LAM1P117W0 / 12284-1WOfirst passage, through the second passage to the opening, from the opening through the third passage, through the fourth passage, and out the dielectric portion outlet.

[0162] Implementation 11: The fluid junction assembly of implementation 10, wherein when the valve is interfaced with the valve interface, the fluid junction assembly is configured to provide a fluidic connection between the second passage and the third passage.

[0163] Implementation 12: The fluid junction assembly of any of implementations 1- 11, wherein:the metallic portion is constructed of an aluminum or aluminum alloy; and the dielectric portion is constructed of a ceramic material.

[0164] Implementation 13: The fluid junction assembly of any of implementations 1- 12, wherein:the second passage comprises a passage between an outer surface of the venting conduit and an inner surface of a side wall of the second passage; andthe venting conduit comprises a side wall that is radially inward of the side wall of the second passage.

[0165] Implementation 14: The fluid junction assembly of any of implementations 1- 13, further configured to fluidically connect a plurality of components of a semiconductor processing apparatus;wherein the dielectric portion provides electrical isolation between the plurality of components and the first portion, and / orwherein the venting conduit has no dead volume within the metallic portion.

[0166] Implementation 15: The fluid junction assembly of implementation 14, wherein the plurality of components of the semiconductor processing apparatus include a gas delivery system, a valve, and a showerhead.

[0167] Implementation 16: The fluid junction assembly of implementation 15, wherein the dielectric portion comprises a flange configured to provide coupling between the metallic portion and an inlet of the showerhead.

[0168] Implementation 17: The fluid junction assembly of implementation 16, wherein the fourth passage is configured to receive the inlet of the showerhead.Attorney Docket No.: LAM1P117W0 / 12284-1WO

[0169] Implementation 18: The fluid junction assembly of implementation 17, wherein the fourth passage comprises a diameter that varies along at least a portion of a length of the fourth passage.

[0170] Implementation 19: The fluid junction assembly of implementation 18, wherein the fourth passage comprises a tapered portion.

[0171] Implementation 20: The fluid junction assembly of any of implementations 1-19, wherein the fluid junction assembly comprises a tee structure configured to couple and fluidically connect a plurality of components of the semiconductor processing apparatus.

[0172] Implementation 21: The fluid junction assembly of implementation 20, wherein the tee structure is configured to couple a gas delivery system at the first inlet, a remote plasma clean (RPC) valve at the valve interface, and a showerhead at the dielectric portion outlet.

[0173] Implementation 22: The fluid junction assembly of any of implementations 1- 21, wherein the fluid junction assembly is configured to reduce dead volume within at least the second passage of the metallic portion, the third passage of the venting conduit, or a combination thereof.

[0174] Implementation 23: The fluid junction assembly of any of implementations 1- 22, wherein:the dielectric portion further comprises a securing feature, the securing feature comprising one or more holes sized to receive corresponding one or more connection features; andthe metallic portion comprises one or more threaded bores corresponding to the one or more holes of the securing feature.

[0175] Implementation 24: The fluid junction assembly of implementation 23, wherein:the one or more holes of the securing feature comprise a first hole having a first diameter, and a second hole having a second diameter different from the first diameter, each of the first and second diameters being larger than a diameter of a corresponding connection feature; andAttorney Docket No.: LAM1P117W0 / 12284-1WOthe one or more threaded bores comprise a first bore having a third diameter proportional to the first diameter, and a second bore having a fourth diameter proportional to the second diameter.

[0176] Implementation 25: The fluid junction assembly of implementation 23, further comprising:a securing plate configured to abut the dielectric portion, the securing plate comprising one or more holes sized to receive corresponding one or more connection features;wherein:the dielectric portion comprises one or more holes sized to receive the corresponding one or more connection features; andthe metallic portion comprises one or more threaded bores corresponding to the one or more holes of the securing plate and the one or more holes of the dielectric portion.

[0177] Implementation 26: The fluid junction assembly of any of implementations 1-25, wherein a distance between the first outlet of the metallic portion and the dielectric portion outlet of the dielectric portion is at least 0.5 inches.

[0178] Implementation 27: A semiconductor processing system comprising:a gas delivery system;a valve;a showerhead comprising an inlet;a radio frequency (RF) power source; anda fluid junction assembly comprising:a metallic portion comprising a first inlet, a first outlet, a first passage f luidica lly connected to the first inlet, a valve interface configured to receive the valve, and a venting conduit fluidically connected to the first passage and the valve interface, wherein the venting conduit extends from an opening internal to the metallic portion to an outlet; anda dielectric portion comprising a second inlet fluidically connected with a second outlet via a second passage spanning through the dielectric portion,Attorney Docket No.: LAM1P117W0 / 12284-1WOwherein the dielectric portion is configured to removably couple with the metallic portion and fluidically connect the first outlet to the second inlet; wherein:the showerhead is electrically coupled with the RF power source and configured to receive RF power; andthe metallic portion of the fluid junction assembly, and the valve are grounded.

[0179] Implementation 28: The semiconductor processing system of implementation 27, wherein:the metallic portion is constructed of an aluminum or aluminum alloy; and the dielectric portion is constructed of a ceramic material.

[0180] Implementation 29: The semiconductor processing system of implementation 27 or implementation 28, wherein the dielectric portion comprises a flange that provides coupling between the metallic portion and a portion of the inlet of the showerhead.

[0181] Implementation 30: The fluid junction assembly of any of implementations 27- 29, wherein:the venting conduit extends along a center axis, andthe first passage extends along a first axis that is perpendicular to the center axis and does not interest with the center axis.

[0182] Implementation 31: The fluid junction assembly of any of implementations 27- 30, wherein:the metallic portion includes a first face, andthe first passage extends through the first face and along a first axis that is oriented at a non-perpendicular angle with respect to the first face.

[0183] Implementation 32: The fluid junction assembly of any of implementations 27- 31, wherein:the second passage has a first passage end that terminates at the valve interface and a second passage end opposite the first passage, andthe second passage end has a partial spiral surface that extends partially around the venting conduit.

Claims

Attorney Docket No.: LAM1P117W0 / 12284-1WOCLAIMSWhat is claimed is:

1. A fluid junction assembly for semiconductor processing, the fluid junction assembly comprising:a metallic portion comprising:a first inlet,a first outlet,a valve interface configured to receive a valve,a first passage fluidically connected to the first inlet and terminating at a second passage, the second passage fluidically connected to the first passage and extending partially through the metallic portion and terminating at the valve interface, anda venting conduit that:extends within and is coaxial to the second passage,has a first end inside the metallic portion and a second end offset from the valve interface, the first end defining an opening, andhas a cylindrical shape partially defining a third passage that extends through the venting conduit from the opening and through the metallic portion to the first outlet; anda dielectric portion comprising a dielectric portion inlet, a dielectric portion outlet, and a fourth passage spanning through the dielectric portion and fluidically connecting the dielectric portion inlet and the dielectric portion outlet, and configured to removably couple with the metallic portion and fluidically connect the first outlet to the dielectric portion inlet.

2. The fluid junction assembly of claim 1, wherein:the venting conduit extends along a center axis, andthe first passage extends along a first axis that is perpendicular to the center axis and does not interest with the center axis.

3. The fluid junction assembly of claim 1, wherein:the metallic portion includes a first face, andAttorney Docket No.: LAM1P117W0 / 12284-1WOthe first passage extends through the first face and along a first axis that is oriented at a non-perpendicular angle with respect to the first face.

4. The fluid junction assembly of claim 3, wherein the non-perpendicular angle is greater than 90 degrees.

5. The fluid junction assembly of claim 1, further comprising a first gas connector coupled to the metallic portion and f luidica lly connected to the first inlet, wherein: the first gas connector has a connector passage fluidically connected to the first inlet and having a first inner diameter,the first inlet has an inlet diameter that is the same as the first inner diameter, andthe first passage has a first passage diameter that is the same as the first inner diameter.

6. The fluid junction assembly of claim 5, wherein:the connector passage extends along a connector axis, andthe first passage extends along a first passage axis that is oriented at an obtuse angle with respect to the connector axis.

7. The fluid junction assembly of claim 1, wherein:the second passage has a first passage end that terminates at the valve interface and a second passage end opposite the first passage, andthe second passage end has a partial spiral surface that extends partially around the venting conduit.

8. The fluid junction assembly of claim 7, wherein the partial spiral surface extends less than 360 degrees around the venting conduit.

9. The fluid junction assembly of claim 1, wherein:the metallic portion has a portion end having the valve interface,the venting conduit extends along a center axis, andwhen viewed perpendicular to the center axis, the opening of the venting conduit is offset from the portion end by a first offset distance.

10. The fluid junction assembly of claim 1, wherein when a valve is interfaced with the valve interface, the fluid junction assembly is configured to enable fluid to flow through the first inlet of the metallic portion to the first passage, through the secondAttorney Docket No.: LAM1P117W0 / 12284-1WOpassage to the opening, from the opening through the third passage, through the fourth passage, and out the dielectric portion outlet.

11. The fluid junction assembly of claim 10, wherein when the valve is interfaced with the valve interface, the fluid junction assembly is configured to provide a fluidic connection between the second passage and the third passage.

12. The fluid junction assembly of claim 1, wherein:the second passage comprises a passage between an outer surface of the venting conduit and an inner surface of a side wall of the second passage; andthe venting conduit comprises a side wall that is radially inward of the side wall of the second passage.

13. The fluid junction assembly of claim 1, wherein the fluid junction assembly has no dead volume within at least the second passage of the metallic portion, the third passage of the venting conduit, or a combination thereof.

14. The fluid junction assembly of claim 1, wherein:the dielectric portion further comprises a securing feature, the securing feature comprising one or more holes sized to receive corresponding one or more connection features; andthe metallic portion comprises one or more threaded bores corresponding to the one or more holes of the securing feature.

15. A semiconductor processing system comprising:a gas delivery system;a valve;a showerhead comprising an inlet;a radio frequency (RF) power source; anda fluid junction assembly comprising:a metallic portion comprising a first inlet, a first outlet, a first passage f luidica lly connected to the first inlet, a valve interface configured to receive the valve, and a venting conduit f luidica lly connected to the first passage and the valve interface, wherein the venting conduit extends from an opening internal to the metallic portion to an outlet; anda dielectric portion comprising a second inlet fluidically connected with a second outlet via a second passage spanning through the dielectric portion,Attorney Docket No.: LAM1P117W0 / 12284-1WOwherein the dielectric portion is configured to removably couple with the metallic portion and fluidically connect the first outlet to the second inlet; wherein:the showerhead is electrically coupled with the RF power source and configured to receive RF power; andthe metallic portion of the fluid junction assembly, and the valve are grounded.

16. The semiconductor processing system of claim 15, wherein:the metallic portion is constructed of an aluminum or aluminum alloy; and the dielectric portion is constructed of a ceramic material.

17. The semiconductor processing system of claim 15, wherein the dielectric portion comprises a flange that provides coupling between the metallic portion and a portion of the inlet of the showerhead.

18. The semiconductor processing system of claim 15, wherein:the venting conduit extends along a center axis, andthe first passage extends along a first axis that is perpendicular to the center axis and does not interest with the center axis.

19. The semiconductor processing system of claim 15, wherein:the metallic portion includes a first face, andthe first passage extends through the first face and along a first axis that is oriented at a non-perpendicular angle with respect to the first face.

20. The semiconductor processing system of claim 15, wherein:the second passage has a first passage end that terminates at the valve interface and a second passage end opposite the first passage, andthe second passage end has a partial spiral surface that extends partially around the venting conduit.

Images