Conductive element substrate and method for manufacturing same
Patent Information
- Authority / Receiving Office
- WO · WO
- Patent Type
- Applications
- Current Assignee / Owner
- SHARP KK
- Filing Date
- 2025-01-29
- Publication Date
- 2026-08-06
Smart Images
Figure JP2025002785_06082026_PF_FP_ABST
Abstract
Description
Conductive Element Substrate and Method for Manufacturing the Same
[0001] The present invention relates to a conductive element substrate and a method for manufacturing the same.
[0002] In recent years, self-emitting organic EL display devices using organic electroluminescence (hereinafter also referred to as "EL") elements have attracted attention. In this organic EL display device, a flexible organic EL display device in which an organic EL element or the like is formed on a resin substrate having flexibility has been proposed as a conductive element substrate.
[0003] For example, Patent Document 1 discloses a method for manufacturing a display device in which a protective member provided with a cut portion in advance is bonded to the surface of the substrate on the opposite side of the display portion, and then a part of the protective member is removed through the cut portion by light irradiation.
[0004] Japanese Patent Application Laid-Open No. 2018-120087
[0005] By the way, in the method for manufacturing the display device disclosed in Patent Document 1, not only is it necessary to pre-process a back surface film such as a protective member, but it is also necessary to accurately perform alignment during bonding, so there is room for improvement in terms of convenience.
[0006] The present invention has been made in view of such points, and an object thereof is to improve the convenience of the back surface film attached to the back surface of the resin substrate.
[0007] In order to achieve the above object, a conductive element substrate according to the present invention is a conductive element substrate including a resin substrate, a conductive element layer provided on the surface of the resin substrate, and a back surface film attached to the back surface of the resin substrate, wherein a part of the interface between the resin substrate and the back surface film is altered and the resin substrate and the back surface film are separated. <0000Furthermore, the method for manufacturing a conductive element substrate according to the present invention is characterized by comprising: a conductive element layer formation step of forming a conductive element layer on the surface of a resin substrate; a back film attachment step of attaching a back film to the back surface of the resin substrate on which the conductive element layer is formed to form an attachment; and a first irradiation step of irradiating the attachment from the back film side of the attachment to alter a part of the interface between the resin substrate and the back film, thereby separating the resin substrate and the back film.
[0009] According to the present invention, the convenience of the backing film attached to the back surface of a resin substrate can be improved.
[0010] Figure 1 is a cross-sectional view showing the schematic configuration of an organic EL display device according to the first embodiment of the present invention. Figure 2 is a plan view of an organic EL display panel constituting the organic EL display device according to the first embodiment of the present invention. Figure 3 is a plan view of the display area of the organic EL display panel constituting the organic EL display device according to the first embodiment of the present invention. Figure 4 is a cross-sectional view of the display area of the organic EL display panel constituting the organic EL display device according to the first embodiment of the present invention. Figure 5 is an equivalent circuit diagram of the thin-film transistor layer constituting the organic EL display panel of the organic EL display device according to the first embodiment of the present invention. Figure 6 is a cross-sectional view showing the organic EL layer constituting the organic EL display panel of the organic EL display device according to the first embodiment of the present invention. Figure 7 is a first cross-sectional view showing a part of the manufacturing process of the organic EL display device according to the first embodiment of the present invention. Figure 8 is a second cross-sectional view showing a part of the manufacturing process of the organic EL display device following Figure 7. Figure 9 is a third cross-sectional view showing a part of the manufacturing process of the organic EL display device following Figure 8. Figure 10 is a fourth cross-sectional view showing a part of the manufacturing process of the organic EL display device following Figure 9. Figure 11 is a fifth cross-sectional view showing a part of the manufacturing process of the organic EL display device following Figure 10. Figure 12 is a sixth cross-sectional view showing a part of the manufacturing process of the organic EL display device following Figure 11. Figure 13 is a seventh cross-sectional view showing part of the manufacturing process of an organic EL display device following Figure 12. Figure 14 is an eighth cross-sectional view showing part of the manufacturing process of an organic EL display device following Figure 13. Figure 15 is a ninth cross-sectional view showing part of the manufacturing process of an organic EL display device following Figure 14. Figure 16 is a tenth cross-sectional view showing part of the manufacturing process of an organic EL display device following Figure 15. Figure 17 is a perspective view showing the schematic configuration of an organic EL display device according to a second embodiment of the present invention. Figure 18 is a cross-sectional view showing the schematic configuration of an organic EL display device along the line XVIII-XVIII in Figure 17. Figure 19 is a cross-sectional view showing the schematic configuration of an organic EL display device according to a third embodiment of the present invention. Figure 20 is a cross-sectional view showing part of the manufacturing process of an organic EL display device according to a third embodiment of the present invention. Figure 21 is a cross-sectional view showing the schematic configuration of an organic EL display device according to a fourth embodiment of the present invention. Figure 22 is a cross-sectional view showing the schematic configuration of an organic EL display device according to a fifth embodiment of the present invention.Figure 23 is a first cross-sectional view showing part of the manufacturing process of an organic EL display device according to a fifth embodiment of the present invention. Figure 24 is a second cross-sectional view showing part of the manufacturing process of an organic EL display device following Figure 23. Figure 25 is a third cross-sectional view showing part of the manufacturing process of an organic EL display device following Figure 24. Figure 26 is a fourth cross-sectional view showing part of the manufacturing process of an organic EL display device following Figure 25. Figure 27 is a fifth cross-sectional view showing part of the manufacturing process of an organic EL display device following Figure 26.
[0011] Embodiments of the present invention will be described in detail below with reference to the drawings. However, the present invention is not limited to the following embodiments.
[0012] 《First Embodiment》 Figures 1 to 16 show a first embodiment of the conductive element substrate and the method for manufacturing the same according to the present invention. In the following embodiments, an organic EL display device equipped with a conductive element layer including an organic EL element layer is exemplified as a conductive element substrate equipped with a conductive element layer. Here, Figure 1 is a cross-sectional view showing the schematic configuration of the organic EL display device 100a of this embodiment. Figure 2 is a plan view of the organic EL display panel 50a constituting the organic EL display device 100a. Figures 3 and 4 are a plan view and a cross-sectional view of the display area D of the organic EL display panel 50a. Figure 5 is an equivalent circuit diagram of the thin film transistor (hereinafter also referred to as "TFT") layer 20 constituting the organic EL display panel 50a. Figure 6 is a cross-sectional view showing the organic EL layer 32 constituting the organic EL display panel 50a.
[0013] As shown in Figure 1, the organic EL display device 100a comprises an organic EL display panel 50a (including a resin substrate 10 and a conductive element layer 48, which will be described later), a back film 53 attached to the back surface of the organic EL display panel 50a (and its resin substrate 10), and a front film 58 attached to the front surface of the organic EL display panel 50a. Furthermore, as shown in Figure 1, the organic EL display device 100a has a reinforcing resin layer 60 provided on the surface of the bent portion B of the organic EL display panel 50a, which will be described later.
[0014] As shown in Figure 2, the organic EL display panel 50a includes, for example, a display area D for displaying an image, which is provided in a rectangular shape, and a frame area F provided in a frame shape around the display area D. In this embodiment, a rectangular display area D is used as an example, but this rectangular shape also includes substantially rectangular shapes such as shapes with arc-shaped sides, shapes with arc-shaped corners, and shapes with notches in part of the sides.
[0015] In the display area D, as shown in Figure 3, multiple subpixels P are arranged in a matrix. Also, in the display area D, as shown in Figure 3, for example, a first subpixel Pr having a red light-emitting region Er for displaying red, a second subpixel Pg having a green light-emitting region Eg for displaying green, and a third subpixel Pb having a blue light-emitting region Eb for displaying blue are arranged adjacent to each other. In the display area D, for example, one pixel is composed of three adjacent first subpixels Pr, second subpixels Pg, and third subpixels Pb, each having a red light-emitting region Er, a green light-emitting region Eg, and a blue light-emitting region Eb, respectively, and displaying different colors.
[0016] A terminal section T is provided at the positive end of the frame region F in the Y direction in Figure 2, extending in one direction (the X direction in Figure 2). Furthermore, between the display region D and the terminal section T, as shown in Figure 2, that is, in the frame region F, a bendable section B is provided on the display region D side of the terminal section T, extending in one direction (the X direction in Figure 2), which can be bent, for example, 180° (in a U shape) with the X direction in Figure 2 as the axis of bending (see Figure 1).
[0017] As shown in Figure 4, the organic EL display panel 50a comprises a resin substrate 10 and a conductive element layer 48 provided on the surface of the resin substrate 10. The back surface film 53 is attached to the back surface of the resin substrate 10, as described above.
[0018] The resin substrate 10 is made of, for example, polyimide resin.
[0019] As shown in Figure 4, the conductive element layer 48 comprises a TFT layer 20 provided on the resin substrate 10, an organic EL element layer 40 provided on the TFT layer 20 as a display element layer, and a sealing film 45 provided on the organic EL element layer 40.
[0020] As shown in Figure 4, the TFT layer 20 comprises a base coat film 11 provided on a resin substrate 10, a plurality of first TFTs 9a, a plurality of second TFTs 9b, and a plurality of capacitors 9c provided on the base coat film 11, and a planarization film 19 provided on each of the first TFTs 9a, second TFTs 9b, and capacitors 9c. Here, as shown in Figure 3, the TFT layer 20 is provided with a plurality of gate lines 14g extending parallel to each other in the X direction in the figure. Also, as shown in Figure 3, the TFT layer 20 is provided with a plurality of source lines 18f extending parallel to each other in a direction that intersects (orthogonal to) the plurality of gate lines 14g, i.e., in the Y direction in the figure. Also, as shown in Figure 3, the TFT layer 20 is provided with a plurality of power lines 18g extending parallel to each other in the Y direction in the figure. And, as shown in Figure 3, each power line 18g is provided adjacent to each source line 18f. Furthermore, in the TFT layer 20, as shown in Figure 5, a first TFT 9a, a second TFT 9b, and a capacitor 9c are provided in each subpixel P. In the TFT layer 20, as shown in Figure 4, a base coat film 11, a semiconductor film which will be a semiconductor layer 12a (described later), a first metal film which will be a gate insulating film 13, a gate line 14g, a first interlayer insulating film 15, a second metal film which will be an upper conductive layer 16c (described later), a second interlayer insulating film 17, a third metal film which will be a source line 18f or power line 18g, and a planarization film 19 are stacked in that order on the resin substrate 10.
[0021] The base coat film 11, gate insulating film 13, first interlayer insulating film 15, and second interlayer insulating film 17 are composed of, for example, single-layer or multilayer films of inorganic insulating films such as silicon nitride, silicon oxide, or silicon oxynitride.
[0022] As shown in Figure 5, the first TFT 9a is electrically connected to the corresponding gate line 14g, source line 18f, and second TFT 9b at each subpixel P. Here, as shown in Figure 4, the first TFT 9a comprises a semiconductor layer 12a provided on a base coat film 11, a gate electrode 14a provided on the semiconductor layer 12a via a gate insulating film 13, and a source electrode 18a and a drain electrode 18b provided spaced apart from each other on the second interlayer insulating film 17.
[0023] The semiconductor layer 12a and the semiconductor layer 12b, described later, are formed from a semiconductor film made of polysilicon such as LTPS (low temperature polysilicon), and include a source region and a drain region defined to be spaced apart from each other, and a channel region defined between the source region and the drain region.
[0024] The gate electrode 14a is provided so as to overlap the channel region of the semiconductor layer 12a and is configured to control conductivity between the source region and the drain region of the semiconductor layer 12a. Here, the gate electrode 14a is formed of a first metal film, similar to the gate wire 14g, etc.
[0025] As shown in Figure 4, the source electrode 18a and the drain electrode 18b are electrically connected to the source region and drain region of the semiconductor layer 12a, respectively, via contact holes formed in the gate insulating film 13, the first interlayer insulating film 15, and the second interlayer insulating film 17. Here, the source electrode 18a and the drain electrode 18b are formed from a third metal film, similar to the source wire 18f and the power supply wire 18g.
[0026] As shown in Figure 5, the second TFT 9b is electrically connected to the corresponding first TFT 9a, power line 18g, and organic EL element 35 (described later) at each subpixel P. Here, as shown in Figure 4, the second TFT 9b comprises a semiconductor layer 12b provided on the base coat film 11, a gate electrode 14b provided on the semiconductor layer 12b via a gate insulating film 13, and a source electrode 18c and a drain electrode 18d provided spaced apart from each other on the second interlayer insulating film 17.
[0027] The gate electrode 14b is provided so as to overlap the channel region of the semiconductor layer 12b and is configured to control conductivity between the source region and the drain region of the semiconductor layer 12b. Here, the gate electrode 14b is formed of a first metal film, similar to the gate wire 14g, etc.
[0028] As shown in Figure 4, the source electrode 18c and drain electrode 18d are electrically connected to the source region and drain region of the semiconductor layer 12b, respectively, through contact holes formed in the laminated film of the gate insulating film 13, the first interlayer insulating film 15, and the second interlayer insulating film 17. Here, the source electrode 18c and drain electrode 18d are formed from a third metal film, similar to the source wire 18f and power supply wire 18g.
[0029] In this embodiment, semiconductor layers 12a and 12b formed from a semiconductor film made of polysilicon are exemplified, but semiconductor layers 12a and 12b may be formed from a semiconductor film made of an oxide semiconductor such as In-Ga-Zn-O. Furthermore, the TFT layer 20 may have a hybrid structure in which a TFT having a semiconductor layer made of polysilicon and a TFT having a semiconductor layer made of an oxide semiconductor are provided.
[0030] As shown in Figure 5, the capacitor 9c is electrically connected to the corresponding first TFT 9a and power line 18g at each sub-pixel P. Here, as shown in Figure 4, the capacitor 9c comprises a lower conductive layer 14c formed of a first metal film, an upper conductive layer 16c formed of a second metal film, and a first interlayer insulating film 15 provided between the lower conductive layer 14c and the upper conductive layer 16c. The upper conductive layer 16c is electrically connected to the power line 18g via a contact hole formed in the second interlayer insulating film 17, as shown in Figure 4.
[0031] The planarized film 19 has a flat surface in the display area D and is made of an organic resin material such as polyimide resin.
[0032] As shown in Figure 4, the organic EL element layer 40 comprises a plurality of first electrodes 30 stacked sequentially corresponding to a plurality of subpixels P, a common edge cover 31, a plurality of organic EL layers 32, and a common second electrode 33. Here, in each subpixel P, the first electrode 30, the organic EL layer 32, and the second electrode 33 constitute an organic EL element 35, as shown in Figure 4, and in the organic EL element layer 40, a plurality of organic EL elements 35 corresponding to a plurality of subpixels P are arranged in a matrix.
[0033] As shown in Figure 4, the first electrode 30 is electrically connected to the drain electrode 18d of the second TFT 9b of each subpixel P via a contact hole formed in the planarization film 19. The first electrode 30 also has the function of injecting holes into the organic EL layer 32. Furthermore, to improve the hole injection efficiency into the organic EL layer 32, it is more preferable to form the first electrode 30 from a material with a large work function. Here, the first electrode 30 is formed from a laminated film in which transparent conductive films such as an indium tin oxide (ITO) film or an indium zinc oxide (IZO) film, a metal film such as a silver film or a silver alloy film, and transparent conductive films such as an ITO film or an IZO film are sequentially stacked and have light reflectivity.
[0034] The edge cover 31 is provided in a grid pattern across the entire display area D, and as shown in Figure 4, it is provided to cover the peripheral edge of the first electrode 30. Here, the edge cover 31 is made of, for example, an organic resin material such as polyimide resin or acrylic resin, or a polysiloxane-based SOG (spin on glass) material.
[0035] The organic EL layer 32 is provided as a light-emitting functional layer and, as shown in Figure 6, comprises a hole injection layer 1, a hole transport layer 2, a light-emitting layer 3, an electron transport layer 4, and an electron injection layer 5, which are sequentially stacked on the first electrode 30.
[0036] The hole injection layer 1, also called the anode buffer layer, has the function of bringing the energy levels of the first electrode 30 and the organic EL layer 32 closer together, thereby improving the hole injection efficiency from the first electrode 30 to the organic EL layer 32. Examples of materials that constitute the hole injection layer 1 include polyarylalkane derivatives, pyrazoline derivatives, phenylenediamine derivatives, oxazole derivatives, styrylanthracene derivatives, fluorenone derivatives, hydrazone derivatives, and stilbene derivatives.
[0037] The hole transport layer 2 has the function of improving the efficiency of hole transport from the first electrode 30 to the organic EL layer 32. Examples of materials constituting the hole transport layer 2 include triphenylamine derivatives, porphyrin derivatives, aromatic tertiary amine compounds, styrylamine derivatives, polyvinylcarbazole, poly-p-phenylenevinylene, polysilane, polyarylalkane derivatives, pyrazoline derivatives, pyrazolone derivatives, phenylenediamine derivatives, arylamine derivatives, amine-substituted chalcone derivatives, fluorenone derivatives, hydrazone derivatives, hydrogenated amorphous silicon, hydrogenated amorphous silicon carbide, zinc sulfide, zinc selenide, and the like.
[0038] The light-emitting layer 3 is a region in which holes and electrons are injected from the first electrode 30 and the second electrode 33, respectively, when a voltage is applied by the first electrode 30 and the second electrode 33, and where holes and electrons recombine. Here, the light-emitting layer 3 is formed of a material with high luminescence efficiency. Examples of materials constituting the light-emitting layer 3 include metal oxynoide compounds [8-hydroxyquinoline metal complex], naphthalene derivatives, anthracene derivatives, diphenylethylene derivatives, vinylacetone derivatives, butadiene derivatives, coumarin derivatives, benzoxazole derivatives, oxadiazole derivatives, oxazole derivatives, benzimidazole derivatives, thiadiazole derivatives, benzothiazole derivatives, styryl derivatives, styrylamine derivatives, bisstyrylbenzene derivatives, trisstyrylbenzene derivatives, perylene derivatives, perinone derivatives, aminopyrene derivatives, pyridine derivatives, rhodamine derivatives, aquidin derivatives, phenoxazone, quinacridone derivatives, rubrene, poly-p-phenylenevinylene, polysilane, and the like.
[0039] The electron transport layer 4 has the function of efficiently transporting electrons to the light-emitting layer 3. Examples of materials that make up the electron transport layer 4 include imidazole derivatives, oxadiazole derivatives, triazole derivatives, benzoquinone derivatives, naphthoquinone derivatives, anthraquinone derivatives, tetracyanoanthraquinodimethane derivatives, diphenoquinone derivatives, fluorenone derivatives, silole derivatives, and metal oxynoide compounds.
[0040] The electron injection layer 5 has the function of bringing the energy levels of the second electrode 33 and the organic EL layer 32 closer together, thereby improving the efficiency of electron injection from the second electrode 33 to the organic EL layer 32. This function allows the driving voltage of the organic EL element 35 to be lowered. The electron injection layer 5 is also called the cathode buffer layer. Examples of materials constituting the electron injection layer 5 include lithium fluoride (LiF) and magnesium fluoride (MgF). ２ ), calcium fluoride (CaF ２ ), strontium fluoride (SrF ２ ), barium fluoride (BaF ２), an inorganic alkali compound, aluminum oxide (Al ２ O ３ ), strontium oxide (SrO), etc. are mentioned.
[0041] As shown in FIG. 4, the second electrode 33 is provided so as to cover each organic EL layer 32 and the edge cover 31. Further, the second electrode 33 has a function of injecting electrons into the organic EL layer 32. Further, the second electrode 33 is more preferably composed of a material with a small work function in order to improve the electron injection efficiency into the organic EL layer 32. Here, the second electrode 33 is formed of, for example, a transparent conductive film such as an ITO film or an IZO film and has high light transmittance.
[0042] As shown in FIG. 4, the sealing film 45 is provided so as to cover the second electrode 33 and includes a first inorganic sealing film 41, an organic sealing film 42, and a second inorganic sealing film 43 laminated in order on the second electrode 33, and has a function of protecting the organic EL layer 32 of the organic EL element 35 from moisture, oxygen, etc. Here, the first inorganic sealing film 41 and the second inorganic sealing film 43 are composed of, for example, an inorganic insulating film such as a silicon nitride film, a silicon oxide film, or a silicon oxynitride film. Further, the organic sealing film 42 is composed of, for example, an organic resin material such as an acrylic resin, an epoxy resin, a silicone resin, a polyurea resin, a parylene resin, a polyimide resin, or a polyamide resin.
[0043] In the above-described organic EL display panel 50a, in each sub-pixel P, by inputting a gate signal to the first TFT 9a via the gate line 14g, the first TFT 9a is turned on, and a voltage corresponding to the source signal is written to the gate electrode 14b of the second TFT 9b and the capacitor 9c via the source line 18f, and a current from the power supply line 18g defined based on the gate voltage of the second TFT 9b is supplied to the organic EL element 35, so that the light-emitting layer 3 of the organic EL element 35 emits light to perform image display. In the organic EL display panel 50a, even when the first TFT 9a is turned off, the gate voltage of the second TFT 9b is held by the capacitor 9c, so that the light emission by the light-emitting layer 3 is maintained until the gate signal of the next frame is input.
[0044] As shown in FIG. 1, the back film 53 includes a film body 51 and an adhesive layer 52 provided on the back surface of the film body 51. Here, the film body 51 is made of, for example, PET (polyethylene terephthalate) resin or the like and is configured to have a thickness of about 75 μm. The adhesive layer 52 is made of, for example, an adhesive such as an acrylic resin-based adhesive having a relatively strong adhesive force and is configured to have a thickness of about 25 μm. Further, as shown in FIG. 1, a modified layer C is formed by being modified by irradiation with an ultraviolet laser beam La (see FIG. 11) described later at a part of the interface between the back film 53 and the resin substrate 10 (the interface of the bent portion B). The back film 53 and the resin substrate 10 are separated by the modified layer C, and at a part of the interface (the interface of the bent portion B), the back film 53 is removed. Although an example is shown in which the entire back film 53 is removed at the interface of the bent portion B between the back film 53 and the resin substrate 10, a part of the back film 53 may be removed. Here, the modification in which the modified layer C is formed means, for example, a change due to (laser) ablation in which the polyimide resin or the like constituting the resin substrate 10 is decomposed by irradiation with a laser beam, generating gas or carbonizing.
[0045] As shown in FIG. 1, the front film 58 includes a film body 56 and an adhesive layer 57 provided on the back surface of the film body 56. Here, the film body 56 is made of, for example, PET resin or the like and is configured to have a thickness of about 75 μm. The adhesive layer 57 is made of, for example, an adhesive such as a urethane resin-based or silicone resin-based adhesive having a relatively weak adhesive force and is configured to have a thickness of about 75 μm. "
[0046] The reinforcing resin layer 60 is provided to have a thickness of about 100 μm by, for example, silicone resin, urethane resin, or the like.
[0047] Next, the manufacturing method of the organic EL display device 100a of this embodiment will be described. The manufacturing method of the organic EL display device 50a of this embodiment comprises an organic EL display panel manufacturing step having a resin substrate formation step and a conductive element layer formation step, a surface film application step, a peeling step, a back surface film application step, a first irradiation step, a second irradiation step, a third irradiation step, and a reinforcing resin layer formation step. Here, Figures 7 to 16 are the first to tenth cross-sectional views showing a part of the manufacturing process of the organic EL display device 100a of this embodiment in sequence.
[0048] <<Organic EL Display Panel Manufacturing Process>> <Resin Substrate Formation Process> After applying a non-photosensitive polyimide resin (approximately 10 μm thick) to the surface of a glass substrate 110 (see Figure 7) by, for example, a spin coating method or a slit coating method, a resin substrate 10 is formed on the glass substrate 110 by performing pre-baking and post-baking on the coated film.
[0049] <Conductive Element Layer Formation Process> ~TFT Layer Formation Process~ First, on the surface of the resin substrate 10 formed in the above resin substrate formation process, a base coat film 11 is formed by sequentially depositing a silicon oxide film (approximately 500 nm thick) and a silicon nitride film (approximately 100 nm thick) using, for example, plasma CVD (chemical vapor deposition).
[0050] Next, an amorphous silicon film (approximately 50 nm thick) is deposited on the substrate surface on which the base coat film 11 is formed by plasma CVD, and the amorphous silicon film is crystallized by laser annealing or the like to form a polysilicon semiconductor film. After that, the semiconductor film is patterned to form semiconductor layers 12a and 12b, etc.
[0051] Subsequently, a silicon oxide film (approximately 100 nm) or the like is formed on the substrate surface on which the semiconductor layer 12a is formed, for example by plasma CVD, to form a gate insulating film 13 that covers the semiconductor layer 12a.
[0052] Furthermore, a first metal film, such as a molybdenum film (approximately 250 nm thick), is formed on the substrate surface on which the gate insulating film 13 is formed, for example, by sputtering. Then, the first metal film is patterned to form the gate wire 14g, gate electrodes 14a and 14b, lower conductive layer 14c, etc.
[0053] Next, using gate electrodes 14a and 14b as masks, impurity ions are doped to make a portion of the semiconductor layers 12a and 12b conductive.
[0054] Subsequently, a silicon nitride film (approximately 100 nm thick) is deposited on the substrate surface, where a portion of the semiconductor layer 12a or the like has been made conductive, for example, by plasma CVD, to form the first interlayer insulating film 15.
[0055] Furthermore, a second metal film, such as a molybdenum film (approximately 250 nm thick), is formed on the substrate surface on which the first interlayer insulating film 15 is formed, for example, by sputtering. After that, the second metal film is patterned to form the upper conductive layer 16c, etc.
[0056] Next, a second interlayer insulating film 17 is formed on the substrate surface on which the upper conductive layer 16c etc. is formed, by sequentially depositing a silicon oxide film (approximately 300 nm thick) and a silicon nitride film (approximately 200 nm thick) using, for example, a plasma CVD method.
[0057] Subsequently, contact holes are formed by appropriately patterning the gate insulating film 13, the first interlayer insulating film 15, and the second interlayer insulating film 17.
[0058] Furthermore, on the substrate surface where the contact holes are formed, a third metal film is formed by sequentially depositing a titanium film (approximately 50 nm thick), an aluminum film (approximately 600 nm thick), and a titanium film (approximately 50 nm thick) by, for example, a sputtering method. After that, the third metal film is patterned to form source electrodes 18a and 18c, drain electrodes 18b and 18d, source wire 18f, power line 18g, etc.
[0059] Finally, a photosensitive polyimide resin (approximately 2.5 μm thick) is applied to the substrate surface on which the source electrode 18a, etc., is formed, for example, by a spin coating method or a slit coating method. Then, a planarization film 19 is formed by pre-baking, exposure, development, and post-baking of the coated film.
[0060] In this manner, the TFT layer 20 can be formed.
[0061] ~Organic EL element layer formation process~ First, on the substrate surface on which the TFT layer 20 was formed in the TFT layer formation process described above, an ITO film (approximately 10 nm thick), an Ag film (approximately 100 nm thick), and an ITO film (approximately 10 nm thick) are sequentially deposited by, for example, a sputtering method to form a conductive multilayer film. Then, the conductive multilayer film is patterned to form the first electrode 30 and the like.
[0062] Next, a photosensitive acrylic resin (approximately 2 μm thick) is applied to the substrate surface on which the first electrode 30, etc., is formed, for example, by a spin coating method or a slit coating method. Then, the coated film is subjected to pre-baking, exposure, development, and post-baking to form an edge cover 31, etc.
[0063] Furthermore, on the substrate surface on which the edge cover 31 etc. are formed, a hole injection layer 1, a hole transport layer 2, a light-emitting layer 3, an electron transport layer 4, and an electron injection layer 5 are sequentially deposited to a thickness of several tens to 50 nm, for example, by vacuum deposition, to form an organic EL layer 32.
[0064] Finally, an ITO film (approximately 100 nm thick) is formed to cover the edge cover 31 and each organic EL layer 32, for example, by sputtering or vacuum deposition, to form the second electrode 33 and the like.
[0065] In this manner, the organic EL element layer 40 can be formed.
[0066] ~Encapsulation Film Formation Process~ First, on the substrate surface where the organic EL element layer 40 was formed in the above organic EL element layer formation process, an inorganic insulating film such as a silicon nitride film, silicon oxide film, or silicon oxynitride film is deposited using a film-forming mask by plasma CVD so as to cover each organic EL element 35, thereby forming a first inorganic encapsulation film 41.
[0067] Next, an organic resin material such as acrylic resin is deposited on the first inorganic encapsulation film 41, for example, by an inkjet method, to form an organic encapsulation film 42.
[0068] Subsequently, an inorganic insulating film, such as a silicon nitride film, silicon oxide film, or silicon oxynitride film, is deposited using a film-forming mask to cover the organic encapsulation film 42 by plasma CVD to form a second inorganic encapsulation film 43.
[0069] As described above, the sealing film 45 can be formed. This allows for the formation of a conductive element layer 48 comprising the TFT layer 20, the organic EL element layer 40, and the sealing film 45, thereby enabling the fabrication of an organic EL display panel 50a.
[0070] <<Surface Film Application Process>> As shown in Figure 7, a surface film 58 is applied to cover the conductive element layer 48 of the organic EL display panel 50a manufactured in the above organic EL display panel manufacturing process.
[0071] <<Peeling Process>> After the organic EL display panel 50a, to which the surface film 58 has been attached in the above surface film attachment process, is inverted, as shown in Figure 8, ultraviolet laser light La output from the ultraviolet laser 121 is irradiated from the glass substrate 110 side through the mirror 126 and lens 127, thereby peeling the glass substrate 110 from the organic EL display panel 50a, as shown in Figure 9. Here, the ultraviolet laser light La has, for example, a wavelength of 308 nm, 343 nm, or 355 nm, a beam size of about 100 mm × 0.4 mm, and an energy density of 130 mJ / cm² at a beam overlap ratio of 50%. ２ It is to that extent.
[0072] <<Back surface film application process>> As shown in Figure 10, a back surface film 53 is applied to the back surface of the organic EL display panel 50a (of the resin substrate 10) from which the glass substrate 110 has been peeled off in the peeling process, thereby forming the attached body A (see Figure 11).
[0073] <<First Irradiation Step>> As shown in Figure 11, ultraviolet laser light La output from ultraviolet laser 121 is irradiated from the back film 53 side via mirror 126 and lens 127 onto the bent portion B of the attached body A formed in the back film attachment step described above, thereby forming a modified layer C on the back surface of the organic EL display panel 50a. This alters a part of the interface between the resin substrate 10 and the back film 53 (of the organic EL display panel 50a), separating the resin substrate 10 and the back film 53.
[0074] <<Second Irradiation Step>> As shown in Figure 12, carbon dioxide laser light Lb output from the carbon dioxide laser 122 is irradiated onto the back surface film 53 along a portion of the edge of the interface where the altered layer C was formed in the first irradiation step, via the mirror 126 and lens 127. Then, as shown in Figure 13, the back surface film 53 corresponding to that portion of the interface is removed. Here, the carbon dioxide laser light Lb has a wavelength of approximately 9 μm to 10 μm, and when the beam size is 80 μm in diameter, the output is approximately 4 W and the scanning speed is approximately 100 mm / second.
[0075] <<Third Irradiation Step>> The organic EL display panel 50a, from which a portion of the back surface film 53 has been removed in the second irradiation step, is inverted, and as shown in Figure 14, carbon dioxide laser light Lb output from the carbon dioxide laser 122 is irradiated onto its surface film 58 via the mirror 126 and lens 127, and then, as shown in Figure 15, a portion of the surface film 58 is removed.
[0076] <<Reinforcement Resin Layer Formation Process>> After a portion of the surface film 58 is removed in the third irradiation process, a silicone resin is applied to the surface of the bent portion B of the organic EL display panel 50a to a thickness of approximately 100 μm. The applied silicone resin is then cured to form a reinforcement resin layer 60, as shown in Figure 16.
[0077] Subsequently, the organic EL display panel 50a is housed inside the housing with the folded portion B of the organic EL display panel 50a bent into a U-shape.
[0078] As described above, the organic EL display device 100a of this embodiment can be manufactured.
[0079] As described above, according to the organic EL display device 100a and its manufacturing method of this embodiment, in the first irradiation step, ultraviolet laser light La is irradiated from the back film 53 side to the bent portion B of the adhesive body A of the organic EL display panel 50a, so that a modified layer C is formed on the back surface of the organic EL display panel 50a, a part of the interface between the resin substrate 10 and the back film 53 of the organic EL display panel 50a is modified and the resin substrate 10 and the back film 53 are separated. Subsequently, in the second irradiation step, carbon dioxide laser light Lb is irradiated onto the back film 53 along the edge of a part of the interface where the modified layer C was formed in the first irradiation step, and then the back film 53 corresponding to that part of the interface is removed. As a result, the back film 53 to be attached to the back surface of the resin substrate 10 of the organic EL display panel 50a does not need to be pre-processed before attachment, and furthermore, it does not need to be precisely aligned with the resin substrate 10 when attaching it, thus improving the convenience of the back film 53 to be attached to the back surface of the resin substrate 10 and reducing manufacturing costs.
[0080] 《Second Embodiment》 Figures 17 and 18 show a second embodiment of the conductive element substrate and the method for manufacturing the same according to the present invention. Here, Figure 17 is a perspective view showing the schematic configuration of the organic EL display device 100b of this embodiment. Figure 18 is a cross-sectional view showing the schematic configuration of the organic EL display device 100b along the line XVIII-XVIII in Figure 17. In the following embodiments, the same reference numerals are used for parts that are the same as in Figures 1 to 6, and their detailed descriptions are omitted.
[0081] In the first embodiment described above, an organic EL display device 100a was shown in which the back film 53 of the bent portion B along the terminal portion T of the organic EL display panel 50a was removed. However, in this embodiment, an organic EL display device 100b is shown in which the back film 53 along the side of the organic EL display panel 50b facing the terminal portion T was removed.
[0082] As shown in Figures 17 and 18, the organic EL display device 100b comprises a plurality of organic EL display panels 50b arranged in a row, a back film 53 attached to the back surface of each organic EL display panel 50b, and a front film 58 attached to the front surface of each organic EL display panel 50b.
[0083] The organic EL display panel 50b, like the organic EL display panel 50a of the first embodiment, includes a rectangular display area D and a frame-shaped bezel area F surrounding the display area D. Furthermore, the organic EL display panel 50b, like the organic EL display panel 50a of the first embodiment, includes a resin substrate 10 and a conductive element layer 48 provided on the surface of the resin substrate 10. Here, the organic EL display panel 50b, as in the organic EL display panel 50a of the first embodiment, has a modified layer C formed at the interface between the back film 53 and the resin substrate 10 in the bent portion B along the terminal portion T, as shown in Figure 18, and a modified layer Ca is also formed at the interface between the back film 53 and the resin substrate 10 along the edge facing the terminal portion T; otherwise, the configuration is substantially the same as the organic EL display panel 50a. Therefore, in the organic EL display panel 50b, as shown in Figures 17 and 18, the back film 53 is removed not only along the bent portion B but also along the edge facing the terminal portion T. As a result, as shown in Figure 18, the terminal portion T of the organic EL display panel 50b on the right side of the figure and the right end of the organic EL display panel 50b on the left side of the figure can overlap, allowing multiple organic EL display panels 50b arranged in a row to be laid out in a tile-like pattern. In this embodiment, an organic EL display device 100b in which multiple organic EL display panels 50b are arranged in a row is illustrated, but a modified layer may also be formed on the two sides perpendicular to the terminal portion T, as well as at the interface between the back film 53 and the resin substrate 10, and the back film 53 may be removed to arrange multiple organic EL display panels in a matrix pattern.
[0084] The organic EL display device 100b of this embodiment can be manufactured by adding the irradiation range of the ultraviolet laser light La in the first irradiation step of the manufacturing method of the organic EL display device 100a of the first embodiment to form a modified layer Ca, and by adding the irradiation range of the carbon dioxide laser light Lb in the second irradiation step to remove the back surface film 53 on the modified layer Ca.
[0085] As described above, according to the organic EL display device 100b and its manufacturing method of this embodiment, in the first irradiation step, ultraviolet laser light La is irradiated from the back film 53 side to the bent portion B of the adhesive body A of the organic EL display panel 50b, so that a modified layer C is formed on the back surface of the organic EL display panel 50b, a part of the interface between the resin substrate 10 and the back film 53 of the organic EL display panel 50b is modified and the resin substrate 10 and the back film 53 are separated. Subsequently, in the second irradiation step, carbon dioxide laser light Lb is irradiated onto the back film 53 along the edge of a part of the interface where the modified layer C was formed in the first irradiation step, and then the back film 53 corresponding to that part of the interface is removed. As a result, the back film 53 to be attached to the back surface of the resin substrate 10 of the organic EL display panel 50b does not need to be pre-processed before attachment, and furthermore, it does not need to be precisely aligned with the resin substrate 10 when attaching it, thus improving the convenience of the back film 53 to be attached to the back surface of the resin substrate 10 and reducing manufacturing costs.
[0086] Furthermore, according to the organic EL display device 100b and its manufacturing method of this embodiment, in the first irradiation step, ultraviolet laser light La is irradiated from the back film 53 side to the edge of the side of the attachment A of the organic EL display panel 50b facing the terminal portion T, so that a modified layer Ca is formed on the back surface of the organic EL display panel 50b, and a part of the interface between the resin substrate 10 and the back film 53 of the organic EL display panel 50b is modified, separating the resin substrate 10 and the back film 53. Subsequently, in the second irradiation step, carbon dioxide laser light Lb is irradiated to the back film 53 along the edge of a part of the interface where the modified layer Ca was formed in the first irradiation step, and then the back film 53 corresponding to that part of the interface is removed. As a result, the terminal portion T of the organic EL display panel 50b and the end of the adjacent organic EL display panel 50b can overlap, so that multiple organic EL display panels 50b arranged in a row can be laid out in a tile-like pattern.
[0087] <Third Embodiment> Figures 19 and 20 show a third embodiment of the conductive element substrate and the method for manufacturing the same according to the present invention. Here, Figure 19 is a cross-sectional view showing the schematic configuration of the organic EL display device 100c of this embodiment. Figure 20 is a cross-sectional view showing a part of the manufacturing process of the organic EL display device 100c.
[0088] In the first and second embodiments described above, organic EL display devices 100a and 100b were shown as examples in which the back film 53 on the altered layer C(Ca) was removed. However, in this embodiment, an organic EL display device 100c is shown as an example in which the back film 53 on the altered layer Cb is not removed.
[0089] As shown in Figure 19, the organic EL display device 100c comprises an organic EL display panel 50c, a back film 53 attached to the back surface of the organic EL display panel 50c, a polarizing plate 59 attached to the surface of the organic EL display panel 50c, and a cover glass 70 attached to the surface of the polarizing plate 59.
[0090] The organic EL display panel 50c, like the organic EL display panel 50a of the first embodiment, comprises a rectangular display area D and a frame-shaped bezel area F surrounding the display area D. Furthermore, the organic EL display panel 50c, like the organic EL display panel 50a of the first embodiment, comprises a resin substrate 10 and a conductive element layer 48 provided on the surface of the resin substrate 10. Here, in the organic EL display panel 50c, unlike the organic EL display panel 50a of the first embodiment, a modified layer C is not formed at the interface between the back film 53 and the resin substrate 10 at the bent portion B along the terminal portion T. Instead, as shown in Figure 19, a modified layer Cb is formed at the interface between the back film 53 and the resin substrate 10 at the edges of the bezel area F and the display area D, along the edge perpendicular to the terminal portion T (the edge extending in the Y direction in Figure 2). Note that the back film 53 on the modified layer Cb is not removed, as shown in Figure 19. Furthermore, the other components of the organic EL display panel 50c are substantially the same as those of the organic EL display panel 50a.
[0091] The polarizing plate 59 comprises a polarizer layer formed by uniaxially stretching a polyvinyl alcohol film on which iodine has been adsorbed, and a pair of protective films made of triacetylcellulose or the like, which are provided so as to sandwich the polarizer layer, and is configured to suppress the reflection of ambient light.
[0092] The cover glass 70 is made of glass, for example, about 0.5 mm thick, and as shown in Figure 19, it is provided so that both ends in the width direction of the rectangular shape in a plan view are curved. Therefore, the organic EL display panel 50c and the back film 53 attached to the cover glass 70 via a polarizing plate 59 are provided so that both ends in the width direction are curved, as shown in Figure 19. Here, as shown in Figure 19, a modified layer Cb is formed at the interface between the resin substrate 10 and the back film 53 of the organic EL display panel 50c so as to correspond to the curved portion of the cover glass 70, and the resin substrate 10 and the back film 53 are separated at the portion where the modified layer Cb is formed. As a result, in the organic EL display panel 50c, the back film 53 and the organic EL display panel 50c are separated at the curved portion, and the TFT layer 20 and organic EL element layer 40 constituting the conductive element layer 48 are located near the neutral plane when bent or on the side where compressive stress is applied, so that damage to each element of the TFT layer 20 and organic EL element layer 40 can be suppressed. Furthermore, if the altered layer Cb is not formed, the neutral surface when bent will be on the back film 53 side, and the TFT layer 20 and the organic EL element layer 40 will be located on the side where tensile stress is applied, making each element of the TFT layer 20 and the organic EL element layer 40 more susceptible to damage.
[0093] The organic EL display device 100c of this embodiment can be manufactured by, in the surface film attachment step of the manufacturing method of the organic EL display device 100a of the first embodiment, attaching a polarizing plate 59 instead of the surface film 58, and in the first irradiation step, as shown in Figure 20, irradiating both ends in the width direction of the organic EL display panel 50c with the back film 53 attached with ultraviolet laser light La from the back film 53 side to form a modified layer Cb on the back surface of the organic EL display panel 50c, and then attaching the cover glass 70 to the organic EL display panel 50c from the polarizing plate 59 side.
[0094] As described above, according to the organic EL display device 100c and its manufacturing method of this embodiment, in the first irradiation step, ultraviolet laser light La is irradiated from the back surface film 53 side to both ends in the width direction of the organic EL display panel 50c. As a result, a modified layer Cb is formed on the back surface of the organic EL display panel 50c, and a part of the interface between the resin substrate 10 and the back surface film 53 of the organic EL display panel 50c is modified, separating the resin substrate 10 and the back surface film 53. This eliminates the need to pre-process the back surface film 53 attached to the back surface of the resin substrate 10 of the organic EL display panel 50c before attachment, and also eliminates the need to precisely align it with the resin substrate 10 when attaching it. Therefore, the convenience of the back surface film 53 attached to the back surface of the resin substrate 10 can be improved, and manufacturing costs can be reduced.
[0095] Furthermore, according to the organic EL display device 100c and its manufacturing method of this embodiment, a modified layer Cb is formed at the interface between the resin substrate 10 and the back film 53 of the organic EL display panel 50c so as to correspond to the curved portion of the cover glass 70, and the interface is separated at the portion where the modified layer Cb is formed. As a result, in the organic EL display panel 50c, the back film 53 and the organic EL display panel 50c are separated at the curved portion, and the TFT layer 20 and organic EL element layer 40 constituting the conductive element layer 48 are located near the neutral plane when bent or on the side where compressive stress is applied, so that damage to each element of the TFT layer 20 and organic EL element layer 40 can be suppressed.
[0096] 《Fourth Embodiment》 Figure 21 shows a fourth embodiment of the conductive element substrate and the method for manufacturing the same according to the present invention. Here, Figure 21 is a cross-sectional view showing the schematic configuration of the organic EL display device 100d of this embodiment.
[0097] In the first embodiment described above, an organic EL display device 100a was shown in which the back film 53 of the bent portion B along the terminal portion T of the organic EL display panel 50a was removed. However, in this embodiment, an organic EL display device 100d is shown in which the back film 53 of both the terminal portion T and the bent portion B of the organic EL display panel 50d was removed.
[0098] As shown in Figure 21, the organic EL display device 100d comprises an organic EL display panel 50d, a back film 53 and a resin film 73 attached to the back surface of the organic EL display panel 50d, a front film 58 attached to the front surface of the organic EL display panel 50d, and a film wiring board 80 mounted on the surface of the terminal portion T of the organic EL display panel 50d.
[0099] The organic EL display panel 50d, like the organic EL display panel 50a of the first embodiment, includes a rectangular display area D and a frame-shaped bezel area F surrounding the display area D. Furthermore, the organic EL display panel 50d, like the organic EL display panel 50a of the first embodiment, includes a resin substrate 10 and a conductive element layer 48 provided on the surface of the resin substrate 10. Here, as shown in Figure 21, the organic EL display panel 50d is substantially the same as the organic EL display panel 50a of the first embodiment, except that a modified layer Cc is formed on the back surface of the bent portion B and the terminal portion T. In the organic EL display panel 50d, as shown in Figure 21, the back surface film 53 is removed not only at the bent portion B but also at the terminal portion T, and a resin film 73 is attached to the terminal portion T from which the back surface film 53 was removed.
[0100] As shown in Figure 21, the resin film 73 comprises a film body 71 and an adhesive layer 72 provided on the back surface of the film body 71. Here, the film body 71 is made of, for example, PET resin and has a thickness of about 100 μm. The adhesive layer 72 is made of, for example, an acrylic resin-based adhesive with relatively strong adhesive strength and has a thickness of about 25 μm. In this embodiment, the film body 71 is made of the same material as the film body 51 of the back surface film 53 but with a different thickness, but the film body 71 may be made of a different, harder material than the film body 51.
[0101] The film wiring board 80 is constructed, for example, from an FPC (flexible printed circuit). Furthermore, as shown in Figure 21, the film wiring board 80 is mounted on the surface of the terminal portion T of the organic EL display panel 50d via an ACF (anisotropic conductive film) 75. Additionally, as shown in Figure 21, an IC (integrated circuit) chip 85 is mounted on the film wiring board 80.
[0102] The organic EL display device 100d of this embodiment can be manufactured by adding the irradiation range of the ultraviolet laser light La in the first irradiation step of the manufacturing method of the organic EL display device 100a of the first embodiment to form a modified layer Cc, adding the irradiation range of the carbon dioxide laser light Lb in the second irradiation step to remove the back surface film 53 on the modified layer Cc, performing the third irradiation step, attaching a resin film 73 to the back surface of the terminal portion T, and further mounting a film wiring board 80 on the surface of the terminal portion T.
[0103] As described above, according to the organic EL display device 100d and its manufacturing method of this embodiment, in the first irradiation step, ultraviolet laser light La is irradiated from the back film 53 side to the bent portion B and terminal portion T of the adhesive body A of the organic EL display panel 50d, so that a modified layer Cc is formed on the back surface of the organic EL display panel 50d, and a part of the interface between the resin substrate 10 and the back film 53 of the organic EL display panel 50d is modified, separating the resin substrate 10 and the back film 53. Subsequently, in the second irradiation step, carbon dioxide laser light Lb is irradiated onto the back film 53 along the edge of a part of the interface where the modified layer Cc was formed in the first irradiation step, and then the back film 53 corresponding to that part of the interface is removed. As a result, the back film 53 attached to the back surface of the resin substrate 10 of the organic EL display panel 50d does not need to be pre-processed before being attached, and furthermore, it does not need to be precisely aligned with the resin substrate 10 when being attached, thus improving the convenience of the back film 53 attached to the back surface of the resin substrate 10 and reducing manufacturing costs.
[0104] Furthermore, according to the organic EL display device 100d and its manufacturing method of this embodiment, a resin film 73 with higher rigidity than the back film 53 is attached to the back surface of the terminal portion T of the organic EL display panel 50d, thereby improving the reliability of mounting the film wiring board 80 to the terminal portion T of the organic EL display panel 50d.
[0105] 《Fifth Embodiment》 Figures 22 to 27 show a fifth embodiment of the conductive element substrate and the method for manufacturing the same according to the present invention. Here, Figure 22 is a cross-sectional view showing the schematic configuration of the organic EL display device 100e of this embodiment.
[0106] In the fourth embodiment described above, an organic EL display device 100d was shown in which a film wiring board 80 is mounted on the surface of the terminal portion T of the organic EL display panel 50d. However, in this embodiment, an organic EL display device 100e is shown in which a film wiring board 80 is mounted on the back surface of the terminal portion T of the organic EL display panel 50e.
[0107] As shown in Figure 22, the organic EL display device 100e comprises an organic EL display panel 50e, a back film 53 attached to the back surface of the organic EL display panel 50e, a front film 58 attached to the front surface of the organic EL display panel 50e, and a film wiring board 90 mounted on the back surface of the terminal portion T of the organic EL display panel 50e.
[0108] The organic EL display panel 50e, like the organic EL display panel 50a of the first embodiment described above, includes a rectangular display area D and a frame-shaped bezel area F surrounding the display area D. In the organic EL display panel 50e, the bezel area F is not bent to position the terminal portion T on the back side, so there is no bent portion B in the bezel area F. The organic EL display panel 50e also includes a resin substrate 10e and a conductive element layer 48 provided on the surface of the resin substrate 10e.
[0109] As shown in Figure 23, the resin substrate 10e comprises a second resin substrate 101 provided on the back side, a wiring layer 102 provided on the second resin substrate 101, an inorganic insulating film 103 provided so as to cover the wiring layer 102, and a first resin substrate 104 provided on the front side (on the inorganic insulating film 103). Here, the inorganic insulating film 105 provided on the first resin substrate 104 corresponds to, for example, the base coat film 11 or gate insulating film 13 of the TFT layer 20, the wiring pattern 106 is formed by, for example, the first metal film or second metal film of the TFT layer 20, and the inorganic insulating film 107 corresponds to, for example, the first interlayer insulating film 15 or the second interlayer insulating film 17. The wiring pattern 106 is electrically connected to display wiring such as the gate line 14g, source line 18f and power line 18g of the display area D.
[0110] As shown in Figure 22, the back film 53 is removed at the terminal portion T. In the area where the back film 53 has been removed, as shown in Figure 22, a portion of the second resin substrate 101 exposed from the back film 53 is removed, exposing the wiring layer 102. Furthermore, as shown in Figure 22, the film wiring board 90 is electrically connected to the wiring layer 102 exposed from the second resin substrate 101 via an ACF (not shown). Here, the film wiring board 90 is constructed of an FPC (flexible printed circuit), similar to the film wiring board 80 in the fourth embodiment described above. Also, IC chips and the like are mounted on the film wiring board 90, similar to the film wiring board 80.
[0111] Next, the manufacturing method of the organic EL display device 100e of this embodiment will be described. The manufacturing method of the organic EL display device 50e of this embodiment comprises an organic EL display panel manufacturing step having a resin substrate formation step and a conductive element layer formation step, a surface film application step, a peeling step, a back surface film application step, a first irradiation step, a second irradiation step, a third irradiation step, and a mounting step. Here, Figures 23 to 27 are the first to fifth cross-sectional views showing a part of the manufacturing process of the organic EL display device 100e in sequence.
[0112] <<Organic EL Display Panel Manufacturing Process>> <Resin Substrate Formation Process> First, a non-photosensitive polyimide resin (approximately 5 μm thick) is applied to the surface of a glass substrate 110 (see Figure 7) by, for example, a spin coating method or a slit coating method. Then, a second resin substrate 101 is formed on the glass substrate 110 by performing pre-baking and post-baking on the coated film.
[0113] Next, a metal film, such as a molybdenum film (approximately 250 nm thick), is formed on the substrate surface on which the second resin substrate 101 is formed, for example, by sputtering. After that, the metal film is patterned to form a wiring layer 102, etc.
[0114] Subsequently, an inorganic insulating film 103 is formed on the substrate surface on which the wiring layer 102 etc. is formed by depositing a silicon oxide film (approximately 100 nm) or the like using, for example, a plasma CVD method.
[0115] Furthermore, a non-photosensitive polyimide resin (approximately 5 μm thick) is applied to the substrate surface on which the inorganic insulating film 103 is formed, for example, by a spin coating method or a slit coating method. Then, pre-baking and post-baking are performed on the coated film to form a first resin substrate 104, thereby forming a resin substrate 10e.
[0116] <Conductive Element Layer Formation Process> On the substrate surface (surface of the first resin substrate 104) on which the resin substrate 10e was formed in the resin substrate formation process described above, the TFT layer formation process, the organic EL element layer formation process, and the sealing film formation process of the first embodiment described above are sequentially performed to form a conductive element layer 48 comprising a TFT layer 20, an organic EL element layer 40, and a sealing film 45, thereby manufacturing an organic EL display panel 50e.
[0117] <<Surface Film Application Process>> Similar to the first embodiment described above, a surface film 58 is applied to cover the conductive element layer 48 of the organic EL display panel 50e manufactured in the organic EL display panel manufacturing process described above.
[0118] <<Peeling Process>> Similar to the first embodiment described above, the glass substrate 110 is peeled off the organic EL display panel 50e, to which the surface film 58 has been attached in the surface film attachment process, by irradiating the organic EL display panel 50e with ultraviolet laser light La output from the ultraviolet laser 121 from the glass substrate 110 side via the mirror 126 and lens 127.
[0119] <<Back surface film application process>> Similar to the first embodiment described above, a back surface film 53 is applied to the back surface of the organic EL display panel 50e (of the resin substrate 10e) from which the glass substrate 110 has been peeled off in the peeling process, thereby forming an attached body A (see Figure 23).
[0120] <<First Irradiation Step>> As shown in Figure 24, ultraviolet laser light La output from the ultraviolet laser 121 is irradiated onto the terminal portion T of the attached body A formed in the above back surface film attachment step from the back surface film 53 side via the mirror 126 and lens 127, thereby forming a modified layer Cd on the back surface of the organic EL display panel 50e. This alters a part of the interface between the resin substrate 10e and the back surface film 53 (of the organic EL display panel 50e), separating the resin substrate 10e and the back surface film 53.
[0121] <<Second Irradiation Step>> As shown in Figure 25, the back surface film 53 is irradiated with carbon dioxide laser light Lb output from the carbon dioxide laser 122 via the mirror 126 and lens 127, along a portion of the edge of the interface where the altered layer Cd was formed in the first irradiation step. Then, as shown in Figure 26, the back surface film 53 corresponding to that portion of the interface is removed.
[0122] <<Third Irradiation Step>> In the organic EL display panel 50e, where a portion of the back film 53 has been removed in the second irradiation step, the second resin substrate 101 exposed from the back film 53 is irradiated with ultraviolet laser light Lc output from the ultraviolet laser 123 via the mirror 126 and lens 127 as energy, as shown in Figure 27. Then, a portion of the second resin substrate 101 is removed to expose the wiring layer 102.
[0123] <<Mounting Process>> After placing the ACF on the wiring layer 102 exposed in the third irradiation process described above, the film wiring board 90 is mounted by pressing the ACF onto the ACF.
[0124] As described above, the organic EL display device 100e of this embodiment can be manufactured.
[0125] As described above, according to the organic EL display device 100e and its manufacturing method of this embodiment, in the first irradiation step, ultraviolet laser light La is irradiated onto the terminal portion T of the attachment A of the organic EL display panel 50e from the back surface film 53 side, so that a modified layer Cd is formed on the back surface of the organic EL display panel 50e, and a part of the interface between the resin substrate 10e and the back surface film 53 of the organic EL display panel 50e is modified, separating the resin substrate 10e and the back surface film 53. Subsequently, in the second irradiation step, carbon dioxide laser light Lb is irradiated onto the back surface film 53 along the edge of a part of the interface where the modified layer Cd was formed in the first irradiation step, and then the back surface film 53 corresponding to that part of the interface is removed. As a result, the back film 53 attached to the back surface of the resin substrate 10e of the organic EL display panel 50e does not need to be pre-processed before being attached, and furthermore, it does not need to be precisely aligned with the resin substrate 10e when being attached. Therefore, the convenience of the back film 53 attached to the back surface of the resin substrate 10e can be improved and manufacturing costs can be reduced.
[0126] Furthermore, according to the organic EL display device 100e and its manufacturing method of this embodiment, the back surface film 53 is removed from the back surface of the terminal portion T of the organic EL display panel 50e, and a portion of the second resin substrate 101 exposed from the back surface film 53 is removed, exposing the wiring layer 102, to which the film wiring board 90 is electrically connected. As a result, the film wiring board 90 is mounted on the back surface of the terminal portion T of the organic EL display panel 50e, eliminating the need for a bend in the bezel area F of the organic EL display panel 50e, and enabling a narrower bezel for the organic EL display panel 50e and the organic EL display device 100e equipped therewith.
[0127] <Other Embodiments> In the above embodiments, an organic EL layer with a five-layer stacked structure consisting of a hole injection layer, a hole transport layer, an emissive layer, an electron transport layer, and an electron injection layer was exemplified. However, the organic EL layer may also have a three-layer stacked structure consisting of, for example, a hole injection layer / hole transport layer, an emissive layer, and an electron transport layer / electron injection layer.
[0128] Furthermore, while the above embodiments illustrate organic EL display devices in which the first electrode is the anode and the second electrode is the cathode, the present invention can also be applied to organic EL display devices in which the laminated structure of the organic EL layer is reversed, with the first electrode being the cathode and the second electrode being the anode.
[0129] Furthermore, while the above embodiments illustrate organic EL display devices in which the electrode of a TFT electrically connected to the first electrode is used as the drain electrode, the present invention can also be applied to organic EL display devices in which the electrode of the TFT electrically connected to the first electrode is called the source electrode.
[0130] Furthermore, although the above embodiments described an organic EL display device as an example of a conductive element substrate, the present invention can be applied to a display device equipped with multiple light-emitting elements driven by electric current, for example, a display device equipped with a QLED (Quantum-dot light-emitting diode), which is a light-emitting element using a quantum dot-containing layer. Moreover, the present invention can be applied to an electronic paper type display device using an electrophoretic method, for example. Furthermore, the present invention can be applied not only to display devices but also to conductive element substrates such as sensors like touch panels and wiring boards.
[0131] As described above, the present invention is useful for flexible conductive element substrates.
[0132] A Attached material D Display area F Frame area La Ultraviolet laser light Lb Carbon dioxide laser light 10 Resin substrate 40 Organic EL element layer (organic electroluminescent element layer, display element layer) 48 Conductive element layer 53 Backside film 58 Front surface film 73 Resin film 90 Film wiring board 100a, 100b, 100c, 100e, 100f Organic EL display device (conductive element substrate) 101 Second resin substrate 102 Wiring layer 104 First resin substrate 110 Glass substrate
Claims
1. A conductive element substrate comprising a resin substrate, a conductive element layer provided on the surface of the resin substrate, and a back film attached to the back surface of the resin substrate, characterized in that a part of the interface between the resin substrate and the back film is altered, causing the resin substrate and the back film to separate.
2. A conductive element substrate according to claim 1, characterized in that a part of the interface is altered by irradiation with energy.
3. A conductive element substrate according to claim 2, characterized in that the energy is ultraviolet laser light.
4. A conductive element substrate according to any one of claims 1 to 3, characterized in that at least a portion of the back surface film is removed at a part of the interface.
5. A conductive element substrate according to any one of claims 1 to 4, characterized in that the resin substrate is made of polyimide resin.
6. A conductive element substrate according to any one of claims 1 to 3, characterized in that the region on which a part of the interface is located is provided in a curved manner.
7. A conductive element substrate according to claim 4, characterized in that a resin film having a different thickness from the back surface film or made of a different material from the back surface film is provided in the region from which the back surface film has been removed.
8. A conductive element substrate according to claim 4, wherein the resin substrate comprises a first resin substrate provided on the front side, a second resin substrate provided on the back side, and a wiring layer provided between the first resin substrate and the second resin substrate, wherein in the region where the back film is removed, a portion of the second resin substrate exposed from the back film is removed to expose the wiring layer, and a film wiring substrate is electrically connected to the wiring layer exposed from the second resin substrate.
9. A conductive element substrate according to any one of claims 1 to 8, characterized in that the conductive element layer includes a display element layer.
10. A conductive element substrate according to claim 9, characterized in that the display element layer includes an organic electroluminescent element layer.
11. A method for manufacturing a conductive element substrate, comprising: a conductive element layer formation step of forming a conductive element layer on the surface of a resin substrate; a back film attachment step of attaching a back film to the back surface of the resin substrate on which the conductive element layer is formed to form an attachment; and a first irradiation step of irradiating the attachment from the back film side to alter a part of the interface between the resin substrate and the back film, thereby separating the resin substrate and the back film.
12. A method for manufacturing a conductive element substrate according to claim 11, characterized in that, after the first irradiation step, the back surface film is irradiated with energy along the edge of a part of the interface, and then a part of the back surface film corresponding to the part of the interface is removed.
13. A method for manufacturing a conductive element substrate according to claim 12, characterized in that in the first irradiation step, ultraviolet laser light is irradiated as the energy, and in the second irradiation step, carbon dioxide laser light is irradiated as the energy.
14. A method for manufacturing a conductive element substrate according to any one of claims 11 to 13, comprising a resin substrate forming step of forming the resin substrate on a glass substrate before the conductive element layer forming step, wherein between the conductive element layer forming step and the back film attachment step, a surface film attachment step of attaching a surface film so as to cover the conductive element layer and a peeling step of peeling the glass substrate by irradiating energy from the glass substrate side are performed in order, and in the back film attachment step, the back film is attached to the back surface of the resin substrate from which the glass substrate has been peeled off.