IC module, IC card, and manufacturing apparatus and method

Abstract

The present disclosure relates to an IC module, an IC card, and a manufacturing apparatus and method capable of suppressing a reduction in resistance to disturbances such as static electricity. The IC module comprises: an IC chip mounted on a mounting substrate and sealed with a sealing material; a first IC reinforcing plate formed on the mounting surface side of the mounting substrate; and a first reinforcing plate IC-chip-side insulating layer formed in close contact with the IC-chip-side surface of the first IC reinforcing plate, between the surface of the sealing material formed on the side of the IC chip opposite to the mounting substrate and the first IC reinforcing plate. The present disclosure can be applied to, for example, an IC module, an IC card, a manufacturing apparatus, a manufacturing method, or a program.

Description

IC Module, IC Card, and Manufacturing Apparatus and Method

[0001] The present disclosure relates to an IC module, an IC card, and a manufacturing apparatus and method, and particularly to an IC module, an IC card, and a manufacturing apparatus and method that can suppress a reduction in resistance to disturbances such as static electricity.

[0002] Conventionally, there has been an IC card, which is a card-shaped information processing device incorporating an IC (Integrated Circuit) chip for information recording and calculation. For example, a contactless IC card connects an IC chip to the mounting terminals of an antenna to form a resonant circuit, and exchanges information by performing wireless communication with an external device such as a reader / writer.

[0003] This IC chip is vulnerable to card bending and point pressure strength. Therefore, it has been reinforced with a metal plate (e.g., made of stainless steel) called an IC reinforcing plate to ensure a certain strength. For example, this IC reinforcing plate is installed on the side of the mounting substrate where the IC chip is mounted (the mounting surface side) and the opposite side (the non-mounting surface side), respectively.

[0004] Also, in an IC card module produced by the COF (Chip on Film) mounting method, with respect to the adhesive for bonding the reinforcing plate to the IC chip, there has been a configuration to prevent peeling resistance during product peeling by making the upper surface of the adhesive protruding to the side of the reinforcing plate into an uneven shape (see, for example, Patent Document 1).

[0005] [[ID=第十五]]Japanese Patent Application Laid-Open No. 2017-4396

[0006] However, in recent years, the process for IC chips has become miniaturized, which has tended to reduce their resistance to disturbances such as static electricity. For example, if static electricity is applied directly above an IC chip, an overvoltage may be applied to the IC chip through a metal IC reinforcement plate, causing dielectric breakdown and potentially degrading or rendering some of the IC chip's functions (e.g., communication range) inoperable. For example, the configuration described in Patent Document 1 is designed to prevent delamination and electric shock, but even with such a configuration, it has been difficult to suppress the reduction in resistance to such disturbances as static electricity.

[0007] This disclosure is made in view of these circumstances and aims to suppress the reduction in resistance to disturbances such as static electricity.

[0008] One aspect of this technology is an IC module comprising an IC chip mounted on a mounting substrate and sealed with a sealing material, a first IC reinforcing plate formed on the mounting surface side of the mounting substrate, and a first reinforcing plate IC chip side insulating layer formed between the surface of the sealing material formed on the side of the IC chip opposite the mounting substrate and the first IC reinforcing plate, in close contact with the IC chip side surface of the first IC reinforcing plate.

[0009] Another aspect of this technology is an IC card comprising an IC chip mounted on a mounting substrate and sealed with a sealing material, a first IC reinforcing plate formed on the mounting surface side of the mounting substrate, and a first reinforcing plate IC chip side insulating layer formed between the surface of the sealing material formed on the side of the IC chip opposite the mounting substrate and the first IC reinforcing plate, in close contact with the IC chip side surface of the first IC reinforcing plate.

[0010] A manufacturing apparatus for yet another aspect of this technology is an IC module manufacturing apparatus comprising: an IC chip generation and mounting unit for generating IC chips and mounting them on a mounting substrate; an IC reinforcement board insulating layer forming unit for forming an insulating layer that adheres to one surface of the IC reinforcement board; and a sealing and reinforcement unit for sealing the IC chips with a sealing material and laminating the IC reinforcement board and the insulating layer on the surface of the sealing material on the mounting surface side of the mounting substrate so that the insulating layer is formed between the sealing material and the IC reinforcement board.

[0011] A further aspect of this technology is a method for manufacturing an IC module, which includes generating an IC chip and mounting it on a mounting substrate, forming an insulating layer that adheres to one surface of an IC reinforcement plate, sealing the IC chip with a sealing material, and laminating the IC reinforcement plate and the insulating layer on the surface of the sealing material on the mounting surface side of the mounting substrate such that the insulating layer is formed between the sealing material and the IC reinforcement plate.

[0012] In one aspect of this technology, an IC module is provided which includes an IC chip mounted on a mounting substrate and sealed with a sealing material, a first IC reinforcing plate formed on the mounting surface side of the mounting substrate, and a first reinforcing plate IC chip-side insulating layer formed between the surface of the sealing material formed on the side of the IC chip opposite the mounting substrate and the first IC reinforcing plate, in close contact with the IC chip-side surface of the first IC reinforcing plate.

[0013] In another aspect of this technology, the IC card includes an IC chip mounted on a mounting substrate and sealed with a sealing material, a first IC reinforcement plate formed on the mounting surface side of the mounting substrate, and a first reinforcement plate IC chip side insulating layer formed between the surface of the sealing material formed on the side of the IC chip opposite the mounting substrate and the first IC reinforcement plate, in close contact with the IC chip side surface of the first IC reinforcement plate.

[0014] In the manufacturing apparatus and methods for yet other aspects of this technology, the manufacturing of an IC module involves generating an IC chip and mounting it on a mounting substrate, forming an insulating layer that adheres to one surface of an IC reinforcement plate, sealing the IC chip with a sealing material, and laminating the IC reinforcement plate and the insulating layer onto the surface of the sealing material on the mounting side of the mounting substrate such that an insulating layer is formed between the sealing material and the IC reinforcement plate.

[0015] This is a cross-sectional view illustrating the main configuration examples of an IC module. This is a cross-sectional view illustrating the effects of disturbances. This is a cross-sectional view illustrating the main configuration examples of an IC module. This is a diagram illustrating the main configuration examples of an IC card. This is a cross-sectional view illustrating the effects of disturbances. This is a cross-sectional view illustrating the main configuration examples of an IC module. This is a block diagram illustrating the main configuration examples of a manufacturing apparatus. This is a flowchart illustrating an example of a manufacturing process flow.

[0016] The following describes the embodiments for implementing this disclosure. The description will be in the following order: 1. Supporting literature, etc., for technical content and technical terminology 2. Effects of disturbances on IC modules / IC cards 3. First embodiment (IC module / IC card) 4. Second embodiment (manufacturing equipment) 5. Appendix

[0017] <1. Supporting Documents for Technical Content and Terminology> The scope disclosed in this technology includes not only the contents described in the embodiments, but also the contents described in the following patent documents, etc., which were publicly known at the time of filing, and the contents of other documents referenced in the following patent documents, etc.

[0018] Patent Document 1: (mentioned above) Patent Document 2: JP-A-4-201297 Patent Document 3: JP-A-4-153096 Patent Document 4: JP-A-5-221191 Patent Document 5: JP-A-5-85090

[0019] In other words, the contents described in the aforementioned patent documents, as well as the contents of other documents referenced in those patent documents, will also serve as a basis for determining the support requirements.

[0020] <2. Effects of disturbances on IC modules / IC cards> Conventionally, there have been IC cards, which are card-shaped information processing devices that incorporate an IC (Integrated Circuit) chip for recording and calculating information. For example, contactless IC cards exchange information by connecting the IC chip to the antenna mounting terminal, forming a resonant circuit, and performing wireless communication with external devices such as readers / writers.

[0021] This IC chip is vulnerable to bending and pressure from the card. Therefore, to ensure a certain level of strength, it was reinforced with a metal plate called an IC reinforcement plate. For example, this IC reinforcement plate was installed on both the side of the mounting substrate where the IC chip was mounted (the mounting side) and the opposite side (the non-mounting side).

[0022] Figure 1 is a cross-sectional view of an IC module illustrating a typical configuration of an IC module. The IC module 10 shown in Figure 1 is a module that performs information recording and calculations, and is mounted on, for example, an IC card. As shown in Figure 1, the IC module 10 includes a mounting substrate 11, an ACF (Anisotropic Conducting Film) 12, an IC chip 13, a encapsulant 14, an IC reinforcement plate 15, another encapsulant 16, and an IC reinforcement plate 17, etc.

[0023] The mounting substrate 11 is a circuit board on which the IC chip 13 is mounted, and is provided with circuits that are electrically connected to the IC chip 13, such as an antenna. The mounting substrate 11 may have any configuration, but for example, it may be made of a film antenna in which an antenna circuit is formed on a film of synthetic resin or the like.

[0024] ACF12 is a film that exhibits so-called "electrical anisotropy," meaning that it is conductive in the crimping direction, i.e., the vertical direction, and insulating in the direction perpendicular to the crimping direction, i.e., the surface direction. A crimping portion 12A is formed on ACF12 using this principle, and the external terminals of the IC chip 13 (i.e., the integrated circuit of the IC chip 13) and the circuit formed on the mounting substrate 11 are electrically connected via this crimping portion 12A.

[0025] The IC chip 13 is a semiconductor element on which an integrated circuit is formed, and this integrated circuit records and calculates information. As shown in Figure 1, the IC chip 13 is mounted on the mounting substrate 11 via the ACF 12 and sealed with encapsulating material 14 and encapsulating material 16. In the following, the side of the mounting substrate 11 on which the IC chip 13 is mounted (upper side in Figure 1) will be referred to as the "mounting side," and the opposite side (lower side in Figure 1) will be referred to as the "non-mounting side."

[0026] The sealing material 14 and sealing material 16 are made of a resin material such as epoxy, and are formed to seal the IC chip 13 mounted on the mounting substrate 11, thereby protecting the IC chip 13. The sealing material 14 seals the mounting side of the mounting substrate 11 (including the IC chip 13), and the sealing material 16 seals the non-mounted side of the mounting substrate 11.

[0027] IC reinforcement plates 15 and 17 are plate-shaped members that reinforce the IC chip 13. To obtain the desired strength, IC reinforcement plates 15 and 17 are generally made of metal (for example, stainless steel (SUS (Steel Special Use Stainless))). By reinforcing with these IC reinforcement plates 15 and 17, as described above, it is possible to suppress damage to the IC chip 13 caused by bending or point pressure of the card when the IC module 10 is mounted on an IC card. IC reinforcement plate 15 is installed (bonded) to the surface of the sealing material 14 (upper surface in Figure 1), and IC reinforcement plate 17 is installed (bonded) to the surface of the sealing material 16 (lower surface in Figure 1).

[0028] However, in recent years, as process miniaturization has progressed and IC chips 13 have become more highly integrated, there has been a tendency for their resistance to disturbances such as static electricity to decrease. Furthermore, when the IC module 10 has the configuration shown in Figure 1, the metal IC reinforcement plate 15 makes it easy for overvoltage to be applied to the IC chip 13 when an overvoltage is applied from the outside.

[0029] Furthermore, in the manufacturing of the IC module 10, for example, so-called voids (also referred to as air gaps or bubbles) were sometimes formed within the encapsulating material 14 and encapsulating material 16. In this specification, a void refers to a region with a lower resistance (dielectric constant) than its surroundings, and does not necessarily have to be a region where no encapsulating material exists, such as bubbles or air gaps. When such voids are formed near the interface with the IC reinforcing plate 15, the resistance of that interface becomes non-uniform. When the interface between the IC reinforcing plate 15 and the encapsulating material 14 becomes non-uniform in this way, surface discharge is more likely to occur on the metal IC reinforcing plate 15 when, for example, static electricity is applied directly from above the IC chip 13. In other words, an overvoltage is dielectric along this interface (the interface between the insulator and the conductor).

[0030] Furthermore, voids have a lower dielectric constant than the insulating encapsulating material. Therefore, if voids are present in the insulating material, there was a risk that an overvoltage could be applied to the voids, causing partial discharge (also called void discharge). In other words, surface discharge could cause void discharge, potentially short-circuiting the integrated circuit of the IC chip 13.

[0031] Figure 2 is a cross-sectional view showing an example of the configuration of a part of an IC card having the IC module 10 shown in Figure 1. The IC card 30 is a card-shaped information processing device formed from an outer material 31 and a resin core layer 32. As shown in Figure 2, the configuration of the IC module 10 shown in Figure 1 is formed within the resin core layer 32. Furthermore, voids 41 to voids 43 are formed in the sealing material 14 of the IC module 10. In particular, voids 43 are formed near the interface between the sealing material 14 and the IC reinforcing plate 15.

[0032] For example, in such a case, if a disturbance such as static electricity occurs from outside the IC card 30, a high voltage is applied to the IC reinforcement plate 15. Also, because the void 43 creates a low-resistance area at the interface between the IC reinforcement plate 15 and the sealing material 14 (the interface becomes non-uniform), the application of high voltage causes surface discharge at the interface. This surface discharge causes void discharge through the void 43, resulting in an overcurrent short-circuit to the integrated circuit of the IC chip 13. There was a risk that such a phenomenon would occur.

[0033] When an overvoltage is applied to an integrated circuit in this way, dielectric breakdown may occur, potentially causing some of the functions of the IC chip 13 (for example, communication distance) to deteriorate or become inoperable.

[0034] In current manufacturing technology, it is generally difficult to completely remove voids when forming the encapsulating material 14 and encapsulating material 16. Therefore, as described above, using the IC reinforcing plate 15 may reduce the resistance of the IC module 10 (IC chip 13) to disturbances such as static electricity.

[0035] Furthermore, Patent Document 1 describes a configuration for an IC card module produced using the COF (Chip on Film) mounting method, in which the adhesive used to bond a reinforcing plate to the IC chip is made uneven on the upper surface of the adhesive that protrudes to the side of the reinforcing plate, thereby preventing delamination and electrical discharge when the product is peeled off. However, even with such a configuration, it is difficult to suppress the generation of voids, and it is difficult to suppress the reduction in resistance to disturbances such as static electricity as described above.

[0036] <3. First Embodiment> <IC Module> Therefore, an insulating layer is provided that is in close contact with the IC chip side surface of the IC reinforcement plate on the mounting surface side of the IC. For example, the IC module comprises an IC chip mounted on a mounting substrate and sealed with a sealing material, a first IC reinforcement plate formed on the mounting surface side of the mounting substrate, and a first reinforcement plate IC chip side insulating layer formed in close contact with the IC chip side surface of the first IC reinforcement plate between the surface of the sealing material formed on the side of the IC chip opposite to the mounting substrate and the first IC reinforcement plate.

[0037] Figure 3 is a cross-sectional view of an IC module illustrating a main configuration example of an IC module to which this technology is applied. The IC module 100 shown in Figure 3 is a module that records and calculates information and is mounted on, for example, an IC card. As shown in Figure 3, the IC module 100 includes a mounting substrate 111, an ACF 112, an IC chip 113, a encapsulating material 114, an IC reinforcing plate 115, a encapsulating material 116, an IC reinforcing plate 117, and an insulating layer 118, etc.

[0038] The mounting substrate 111 is a circuit board on which the IC chip 113 is mounted, and is provided with circuits that are electrically connected to the IC chip 113. For example, the mounting substrate 111 may have an antenna used for communication performed by the IC chip 113. The mounting substrate 111 may have any configuration, but for example, it may be made of a film antenna in which an antenna circuit is formed on a film of synthetic resin or the like.

[0039] ACF112 is a film exhibiting so-called "electrical anisotropy," and has a crimped portion 112A formed using this principle. Through this crimped portion 112A, the external terminals of the IC chip 113 (i.e., the integrated circuit of the IC chip 113) and the circuit formed on the mounting substrate 111 are electrically connected.

[0040] The IC chip 113 is a semiconductor element on which an integrated circuit is formed, and the integrated circuit performs information recording and calculations. As shown in Figure 3, the IC chip 113 is mounted on the mounting substrate 111 via the ACF 112 and sealed with encapsulating material 114 and encapsulating material 116. In the example in Figure 3, the IC chip 113 is mounted on the mounting substrate 111 using the ACF 112, but any method of mounting the IC chip 113 to the mounting substrate 111 is acceptable. In this specification, the side of the mounting substrate 111 on which the IC chip 113 is mounted (upper side in Figure 3) is referred to as the "mounting side," and the opposite side (lower side in Figure 3) is referred to as the "non-mounting side."

[0041] The sealing material 114 and sealing material 116 are made of a resin material such as epoxy, and are formed to seal the IC chip 113 mounted on the mounting substrate 111, thereby protecting the IC chip 113. The sealing material 114 seals the mounting side of the mounting substrate 111 (including the IC chip 113), and the sealing material 116 seals the non-mounted side of the mounting substrate 111.

[0042] IC reinforcement plates 115 and 117 are plate-shaped members that reinforce the IC chip 113. To obtain the desired strength, IC reinforcement plates 115 and 117 are generally made of metal (for example, stainless steel (SUS)). By reinforcing with these IC reinforcement plates 115 and 117, as described above, it is possible to suppress damage to the IC chip 113 caused by bending or point pressure of the card when the IC module 100 is mounted on an IC card. IC reinforcement plate 115 is installed (adhered) to the surface of the sealing material 114 (upper surface in Figure 3), and IC reinforcement plate 117 is installed (adhered) to the surface of the sealing material 116 (lower surface in Figure 3). In this specification, IC reinforcement plate 115 is also referred to as the first IC reinforcement plate, and IC reinforcement plate 117 is also referred to as the second IC reinforcement plate.

[0043] The insulating layer 118 is a layer made of an insulating material and is formed to adhere closely to the surface of the IC reinforcement plate 115 on the IC chip 113 side. Figure 3 is a cross-sectional view, and the insulating layer 118 is formed in a planar (film-like) manner so as to be laminated on the surface of the IC reinforcement plate 115 on the IC chip 113 side. For example, the insulating layer 118 is formed to adhere closely to the surface of the IC reinforcement plate 115 on the IC chip 113 side so as not to generate voids. For example, the insulating layer 118 may be formed by painting or bonding an insulating material to the IC reinforcement plate 115. In other words, the insulating layer 118 may be formed in a process separate from the sealing material 114. In this specification, the insulating layer 118 formed on the surface of the IC reinforcement plate 115 (first IC reinforcement plate) on the IC chip 113 side is also referred to as the first reinforcement plate IC chip side insulating layer.

[0044] By providing such an insulating layer 118, the IC module 100 can suppress the generation of voids in the vicinity of the IC reinforcement plate 115, improve the uniformity of the interface between the encapsulant 114 and the IC reinforcement plate 115, and suppress the occurrence of surface discharge. As a result, the IC module 100 can suppress the occurrence of a short circuit of overcurrent to the IC chip 113 through void discharge. Therefore, the IC module 100 can suppress the occurrence of dielectric breakdown of the integrated circuit of the IC chip 113, and suppress the deterioration or malfunction of a part of the function of the IC chip 113 (for example, communication distance). That is, it is possible to suppress the reduction of the resistance of the IC module 100 (IC chip 113) to disturbances such as static electricity.

[0045] The configuration of the IC module 100 may be any configuration and is not limited to the example in FIG. 3. For example, the IC module 100 may have a plurality of IC chips 113. Also, the IC module 100 may have a configuration other than that shown in FIG. 3.

[0046] <IC Card> The above-described IC module 100 may be applied (mounted) to, for example, an IC card. That is, the IC card includes an IC chip mounted on a mounting substrate and encapsulated with an encapsulant, a first IC reinforcement plate formed on the mounting surface side of the mounting substrate, and a first reinforcement plate IC chip side insulating layer formed between the surface of the encapsulant formed on the side opposite to the mounting substrate of the IC chip and the first IC reinforcement plate and adhered to the surface of the first IC reinforcement plate on the IC chip side.

[0047] FIG. 4 is a diagram showing a main configuration example of an IC card to which the present technology is applied. As shown in FIG. 4, an IC card 130 is a card-shaped information processing device having an IC module 100, and the IC module 100 has an IC chip 113 and an antenna 131. Note that FIG. 4 shows an example of the layout of the IC module 100 as viewed from the mounting surface side of the mounting substrate 111, rather than the external appearance of the IC card 130. In FIG. 4, for convenience of explanation, configurations such as the mounting substrate 111, ACF 112, sealing material 114, IC reinforcing plate 115, sealing material 116, IC reinforcing plate 117, and insulating layer 118 are omitted.

[0048] The antenna 131 is formed on the mounting substrate 111 and is electrically connected to the IC chip 113, and is used for communication between the integrated circuit of the IC chip 113 and the outside of the IC card 130 (for example, a reader / writer, etc.). For example, the mounting substrate 111 may be constituted by a film antenna on which the antenna 131 is formed. In FIG. 4, the IC card 130 is shown as having only one IC module 100, but the IC card 130 may have a plurality of IC modules 100. Also, the IC card 130 may have a plurality of IC chips 113. Further, the IC card 130 may have a configuration other than that shown in FIG. 4.

[0049] FIG. 5 is a cross-sectional view showing a configuration example of a part of the IC card 130. The IC card 130 has its card shape formed by an exterior material 133 and a resin core layer 132, and the configuration of the IC module 100 is formed in the resin core layer 132. Further, voids 141 to 143 are formed in the sealing material 114 of the IC module 100.

[0050] For example, in such a case, when a disturbance such as static electricity occurs from the outside of the IC card 130, a high voltage is applied to the IC reinforcing plate 115.

[0051] However, in this case, since an insulating layer 118 is formed on the surface of the IC reinforcement plate 115 on the IC chip 113 side so as to be in close contact with that surface, voids 143 are not formed near that surface. In other words, the generation of voids near that surface is suppressed. As a result, the uniformity of the resistance value of the surface is improved, and even when a high voltage is applied to the IC reinforcement plate 115, the generation of surface discharge is suppressed. Therefore, even if voids are formed in the sealing material 114 as described above, the generation of void discharge due to surface discharge is suppressed, and short circuits of overcurrent to the integrated circuit of the IC chip 113 are suppressed. In other words, the IC card 130 can suppress the occurrence of dielectric breakdown of the integrated circuit of the IC chip 113, and can prevent deterioration of some of the functions of the IC chip 113 (e.g., communication distance) or inoperability. That is, it can suppress the reduction in the resistance of the IC card 130 (IC chip 113) to disturbances such as static electricity.

[0052] Furthermore, the IC module 100 is not limited to the IC card 130 described above, but can be applied to any device or system.

[0053] <Insulating Layer> In the IC module 100 or IC card 130, the insulating layer 118 may be made of any material. For example, the insulating layer 118 (first reinforcing plate IC chip side insulating layer) may be made of an epoxy resin. Alternatively, the insulating layer 118 may be made of a polyimide resin. Alternatively, the insulating layer 118 may be made of a polyamide-imide resin. Alternatively, the insulating layer 118 may be made of an epoxy film. Alternatively, the insulating layer 118 may be made of a polyimide film. Alternatively, the insulating layer 118 may be made of a polyamide-imide film. Alternatively, the insulating layer 118 may be made of a polypropylene resin or film. Alternatively, the insulating layer 118 may be made of a polystyrene resin or film. Alternatively, the insulating layer 118 may be made of a polyurethane resin or film. Alternatively, the insulating layer 118 may be made of a polyethylene resin or film. Alternatively, the insulating layer 118 may be made of a polyetheretherketone resin or film. Furthermore, the insulating layer 118 may be made of polycarbonate resin or film. By applying such materials as the insulating layer 118, it is possible to more reliably suppress the reduction in the resistance of the IC card 130 (IC chip 113) to disturbances such as static electricity.

[0054] The thickness of the insulating layer 118 can be any thickness. Generally, the thicker the insulating layer 118, the greater the resistance and the greater the effect of improving resistance to disturbances. For example, the thickness of the insulating layer 118 (first reinforcing plate IC chip side insulating layer) may be 2 [µm] or more. By doing so, it is possible to more reliably suppress the reduction in the resistance of the IC card 130 (IC chip 113) to disturbances such as static electricity. Alternatively, the thickness of the insulating layer 118 (first reinforcing plate IC chip side insulating layer) may be 5 [µm] or more. By doing so, it is possible to more reliably suppress the reduction in the resistance of the IC card 130 (IC chip 113) to disturbances such as static electricity.

[0055] The volume resistivity of the insulating layer 118 can be any value. Generally, the higher the volume resistivity of the insulating layer, the greater the effect of improving resistance to disturbances. For example, the insulating layer 118 (the insulating layer on the IC chip side of the first reinforcing plate) may be formed of a material with a volume resistivity of 10^11 [Ω・cm] or more. In this specification, "A^B" indicates that B is the exponent of A. By doing so, it is possible to more reliably suppress the reduction in the resistance of the IC card 130 (IC chip 113) to disturbances such as static electricity.

[0056] The effect of the insulating layer 118 on improving resistance to disturbances depends on both the thickness and volume resistivity of the insulating layer 118. For example, if the volume resistivity of the insulating layer 118 is sufficiently high, a sufficient effect can be obtained even if the layer thickness is reduced. Conversely, if the thickness of the insulating layer 118 is sufficiently high, a sufficient effect can be obtained even if a material with lower volume resistivity is used as the insulating layer 118. Therefore, in order to obtain the effect more efficiently, it is desirable to design the insulating layer 118 considering both its thickness and volume resistivity.

[0057] Furthermore, the area in which the insulating layer 118 is formed on the surface of the IC reinforcement plate 115 may be any range. For example, the insulating layer 118 (first reinforcement plate IC chip side insulating layer) may be formed in an area that encompasses the portion of the surface of the IC reinforcement plate 115 over which the IC chip 113 is superimposed. That is, the area of ​​the insulating layer 118 may be larger than the size of the IC chip 113. By doing so, a reduction in the uniformity of the interface of the IC reinforcement plate 115 on the IC chip 113 can be suppressed, and a reduction in the resistance of the IC card 130 (IC chip 113) to disturbances such as static electricity can be suppressed more reliably.

[0058] <Multiple Insulating Layers> In the above description, a single insulating layer is formed, but multiple insulating layers may be formed. For example, as shown in Figure 6, in the IC module 100, an insulating layer 151 may be formed in addition to the insulating layer 118. The insulating layer 151 is a layer made of an insulating material, similar to the insulating layer 118. However, the insulating layer 151 is formed to adhere closely to the surface of the IC reinforcement plate 115 opposite to the IC chip 113. Figure 6 is a cross-sectional view, and the insulating layer 151 is formed in a planar (film-like) manner so as to be laminated on the surface of the IC reinforcement plate 115 opposite to the IC chip 113. For example, the insulating layer 151 is formed to adhere closely to the surface of the IC reinforcement plate 115 opposite to the IC chip 113 so as not to generate voids. For example, the insulating layer 151 may be formed by painting or bonding an insulating material to the IC reinforcement plate 115. In other words, the insulating layer 151 may be formed in a process separate from the sealing material 114. In this specification, the insulating layer 151 formed on the surface of the IC reinforcing plate 115 (first IC reinforcing plate) opposite to the IC chip 113 is also referred to as the insulating layer on the opposite side of the first reinforcing plate.

[0059] In other words, the IC module 100 may have, in addition to the insulating layer 118 (first reinforcing plate IC chip side insulating layer) formed in close contact with the surface of the IC reinforcing plate 115 (first IC reinforcing plate) on the IC chip 113 side, an insulating layer 151 (first reinforcing plate opposite side insulating layer) formed in close contact with the surface of the IC reinforcing plate 115 (first IC reinforcing plate) on the opposite side of the IC chip 113. The same applies to the IC card 130. In other words, the IC card 130 may have, in addition to the insulating layer 118 (first reinforcing plate IC chip side insulating layer) formed in close contact with the surface of the IC reinforcing plate 115 (first IC reinforcing plate) on the IC chip 113 side, an insulating layer 151 (first reinforcing plate opposite side insulating layer) formed in close contact with the surface of the IC reinforcing plate 115 (first IC reinforcing plate) on the opposite side of the IC chip 113.

[0060] By adopting this configuration, the IC module 100 (IC card 130) can further suppress the occurrence of surface discharge at the interface of the IC reinforcement plate 115. In other words, the IC module 100 (IC card 130) can further suppress the reduction in the resistance of its IC chip 113 to disturbances such as static electricity.

[0061] The insulating layer 151 may be made of any material, similar to the insulating layer 118. For example, it may be made of epoxy resin or film, polyimide resin or film, polyamide-imide resin or film, polypropylene resin or film, polystyrene resin or film, polyurethane resin or film, polyethylene resin or film, polyetheretherketone resin or film, or polycarbonate resin or film. The thickness of the insulating layer 151 may be any thickness, similar to the insulating layer 118. For example, it may be 2 [µm] or more, or 5 [µm] or more. The volume resistivity of the insulating layer 151 may be any value, similar to the insulating layer 118. For example, it may be 10^11 [Ω・cm] or more. The area on the surface of the IC reinforcement plate 115 where the insulating layer 151 is formed may be any range. For example, it may be formed in an area that includes the portion on the surface of the IC reinforcement plate 115 where the IC chip 113 is superimposed. The insulating layer 151 may be made of the same material as the insulating layer 118, or it may be made of a different material. The thickness of the insulating layer 151 may be the same as or different from the thickness of the insulating layer 118. The volume resistivity of the insulating layer 151 may be the same as or different from that of the insulating layer 118. The area in which the insulating layer 151 is formed may be the same as or different from the area in which the insulating layer 118 is formed.

[0062] Furthermore, as shown in Figure 6, in addition to the insulating layer 118, an insulating layer 152 may be formed in the IC module 100. The insulating layer 152 is a layer composed of an insulating material, similar to the insulating layer 118. However, the insulating layer 152 is formed to adhere closely to the surface of the IC reinforcing plate 117 on the IC chip 113 side. Figure 6 is a cross-sectional view, and the insulating layer 152 is formed in a planar (film-like) manner so as to be laminated on the surface of the IC reinforcing plate 117 on the IC chip 113 side. For example, the insulating layer 152 is formed to adhere closely to the surface of the IC reinforcing plate 117 on the IC chip 113 side so as not to generate voids. For example, the insulating layer 152 may be formed by painting or bonding an insulating material to the IC reinforcing plate 117. In other words, the insulating layer 152 may be formed in a process separate from the sealing material 116. In this specification, the insulating layer 152 formed on the surface of the IC reinforcing plate 117 (second IC reinforcing plate) on the IC chip 113 side is also referred to as the second reinforcing plate IC chip side insulating layer.

[0063] In other words, the IC module 100 may further include, in addition to the insulating layer 118 (first reinforcing plate IC chip side insulating layer) formed in close contact with the surface of the IC reinforcing plate 115 (first IC reinforcing plate) on the IC chip 113 side, an IC reinforcing plate 117 (second IC reinforcing plate) formed on the non-mounted side of the mounting substrate 111, and an insulating layer 152 (second reinforcing plate IC chip side insulating layer) formed in close contact with the surface of the IC reinforcing plate 117 (second IC reinforcing plate) on the IC chip 113 side between the surface of the sealing material 116 formed on the non-mounted side of the mounting substrate 111 and the IC reinforcing plate 117 (second IC reinforcing plate). The IC card 130 is similar. In other words, the IC card 130 may further include, in addition to the insulating layer 118 (first reinforcing plate IC chip side insulating layer) formed in close contact with the surface of the IC reinforcing plate 115 (first IC reinforcing plate) on the IC chip 113 side, an IC reinforcing plate 117 (second IC reinforcing plate) formed on the non-mounted side of the mounting substrate 111, and an insulating layer 152 (second reinforcing plate IC chip side insulating layer) formed in close contact with the surface of the IC reinforcing plate 117 (second IC reinforcing plate) on the IC chip 113 side between the surface of the sealing material 116 formed on the non-mounted side of the mounting substrate 111 and the IC reinforcing plate 117 (second IC reinforcing plate).

[0064] By adopting this configuration, the IC module 100 (IC card 130) can further suppress the occurrence of surface discharge at the interface of the IC reinforcement plate 117, similar to the case of the IC reinforcement plate 115. In other words, the IC module 100 (IC card 130) can further suppress the reduction in the resistance of its IC chip 113 to disturbances such as static electricity.

[0065] The insulating layer 152 may be made of any material, similar to the insulating layer 118. For example, it may be made of epoxy resin or film, polyimide resin or film, polyamide-imide resin or film, polypropylene resin or film, polystyrene resin or film, polyurethane resin or film, polyethylene resin or film, polyetheretherketone resin or film, or polycarbonate resin or film. The thickness of the insulating layer 152 may be any thickness, similar to the insulating layer 118. For example, it may be 2 [µm] or more, or 5 [µm] or more. The volume resistivity of the insulating layer 152 may be any value, similar to the insulating layer 118. For example, it may be 10^11 [Ω・cm] or more. The area on the surface of the IC reinforcement plate 117 where the insulating layer 152 is formed may be any range. For example, it may be formed in an area that includes the portion on the surface of the IC reinforcement plate 117 where the IC chip 113 is superimposed. The insulating layer 152 may be made of the same material as the insulating layer 118, or it may be made of a different material. The thickness of the insulating layer 152 may be the same as or different from the thickness of the insulating layer 118. The volume resistivity of the insulating layer 152 may be the same as or different from that of the insulating layer 118. The area in which the insulating layer 152 is formed may be the same as or different from the area in which the insulating layer 118 is formed.

[0066] Furthermore, as shown in Figure 6, in addition to the insulating layer 118, an insulating layer 153 may be formed in the IC module 100. The insulating layer 153 is a layer made of an insulating material, similar to the insulating layer 118. However, the insulating layer 153 is formed to adhere closely to the surface of the IC reinforcement plate 117 opposite to the IC chip 113. Figure 6 is a cross-sectional view, and the insulating layer 153 is formed in a planar (film-like) manner so as to be laminated on the surface of the IC reinforcement plate 117 opposite to the IC chip 113. For example, the insulating layer 153 is formed to adhere closely to the surface of the IC reinforcement plate 117 opposite to the IC chip 113 so as not to generate voids. For example, the insulating layer 153 may be formed by painting or bonding an insulating material to the IC reinforcement plate 117. In other words, the insulating layer 153 may be formed in a separate process from the sealing material 116. In this specification, the insulating layer 153 formed on the surface of the IC reinforcing plate 117 (second IC reinforcing plate) opposite to the IC chip 113 is also referred to as the insulating layer on the opposite side of the second reinforcing plate.

[0067] In other words, the IC module 100 may further include, in addition to the insulating layer 118 (first reinforcing plate IC chip side insulating layer) formed in close contact with the surface of the IC reinforcing plate 115 (first IC reinforcing plate) on the IC chip 113 side, an IC reinforcing plate 117 (second IC reinforcing plate) formed on the non-mounted side of the mounting substrate 111, and an insulating layer 153 (second reinforcing plate opposite side insulating layer) formed in close contact with the surface of the IC reinforcing plate 117 (second IC reinforcing plate) opposite to the IC chip 113. The IC card 130 is similar. In other words, the IC card 130 may further include, in addition to the insulating layer 118 (first reinforcing plate IC chip side insulating layer) formed in close contact with the surface of the IC reinforcing plate 115 (first IC reinforcing plate) on the IC chip 113 side, an IC reinforcing plate 117 (second IC reinforcing plate) formed on the non-mounted side of the mounting substrate 111, and an insulating layer 153 (second reinforcing plate opposite side insulating layer) formed in close contact with the surface of the IC reinforcing plate 117 (second IC reinforcing plate) opposite to the IC chip 113.

[0068] By adopting this configuration, the IC module 100 (IC card 130) can further suppress the occurrence of surface discharge at the interface of the IC reinforcement plate 117, similar to the case of the IC reinforcement plate 115. In other words, the IC module 100 (IC card 130) can further suppress the reduction in the resistance of its IC chip 113 to disturbances such as static electricity.

[0069] The insulating layer 153 may be made of any material, similar to the insulating layer 118. For example, it may be made of epoxy resin or film, polyimide resin or film, polyamide-imide resin or film, polypropylene resin or film, polystyrene resin or film, polyurethane resin or film, polyethylene resin or film, polyetheretherketone resin or film, or polycarbonate resin or film. The thickness of the insulating layer 153 may be any thickness, similar to the insulating layer 118. For example, it may be 2 [µm] or more, or 5 [µm] or more. The volume resistivity of the insulating layer 153 may be any value, similar to the insulating layer 118. For example, it may be 10^11 [Ω・cm] or more. The area on the surface of the IC reinforcement plate 117 where the insulating layer 153 is formed may be any range. For example, it may be formed in an area that includes the portion on the surface of the IC reinforcement plate 117 where the IC chip 113 is superimposed. The insulating layer 153 may be made of the same material as the insulating layer 118, or it may be made of a different material. The thickness of the insulating layer 153 may be the same as or different from the thickness of the insulating layer 118. The volume resistivity of the insulating layer 153 may be the same as or different from that of the insulating layer 118. The area in which the insulating layer 152 is formed may be the same as or different from the area in which the insulating layer 118 is formed.

[0070] The combination of insulating layers is not limited to these examples. For example, the IC module 100 (or IC card 130) may have insulating layer 118, insulating layer 151, and insulating layer 152. Alternatively, the IC module 100 (or IC card 130) may have insulating layer 118, insulating layer 151, and insulating layer 153. Alternatively, the IC module 100 (or IC card 130) may have insulating layer 118, insulating layer 152, and insulating layer 153. Alternatively, the IC module 100 (or IC card 130) may have insulating layer 118, insulating layer 151, insulating layer 152, and insulating layer 153. By having more insulating layers, the IC module 100 (IC card 130) can further suppress the reduction in the resistance of its IC chip 113 to disturbances such as static electricity.

[0071] When three or more insulating layers are applied in combination in this manner, the materials constituting each insulating layer may or may not be the same. Furthermore, the thickness of each insulating layer may or may not be the same. Also, the volume resistivity of each insulating layer may or may not be the same. Finally, the area in which each insulating layer is formed may or may not be the same.

[0072] <4. Second Embodiment> <Manufacturing Apparatus> Next, the manufacturing of the IC card 130 (including the IC module 100) as described above will be explained.

[0073] Figure 7 is a block diagram showing an example of the main configuration of a manufacturing apparatus (an embodiment of a manufacturing apparatus to which this technology is applied) for manufacturing an IC card 130, which is an embodiment of an IC module or IC card to which this technology is applied. The manufacturing apparatus 300 shown in Figure 7 includes a control unit 301, an IC chip generation and mounting unit 311, an IC reinforcement board insulating coating unit 312, an IC reinforcement board processing unit 313, a sealing and reinforcement unit 314, an IC module fragmentation unit 315, an IC card generation unit 316, an IC card fragmentation unit 317, an inspection unit 318, an input unit 321, an output unit 322, a storage unit 323, a communication unit 324, and a drive 325.

[0074] The control unit 301 includes, for example, a CPU (Central Processing Unit), ROM (Read Only Memory), and RAM (Random Access Memory), and controls the IC chip generation and mounting unit 311, the IC reinforcement board insulating coating unit 312, the IC reinforcement board processing unit 313, the sealing and reinforcement unit 314, the IC module fragmentation unit 315, the IC card generation unit 316, the IC card fragmentation unit 317, and the inspection unit 318, and performs control processing related to the manufacturing of the IC card 130. For example, the CPU of the control unit 301 executes various processes according to the program stored in the ROM. The CPU also executes various processes according to the program loaded into the RAM from the storage unit 323. The RAM also appropriately stores data necessary for the CPU to execute various processes.

[0075] The IC chip generation and mounting unit 311 is controlled by the control unit 301 to perform processes related to the generation and mounting of the IC chip 113. For example, the IC chip generation and mounting unit 311 may form a modification circuit on a semiconductor to create individual chips and generate the IC chip 113. Alternatively, the IC chip generation and mounting unit 311 may mount the IC chip 113 onto the mounting substrate 111. Furthermore, the IC chip generation and mounting unit 311 may supply the IC chip 113 and the mounting substrate 111 (the mounting substrate 111 on which the IC chip 113 is mounted) to the sealing and reinforcement unit 314.

[0076] The IC reinforcement plate insulating coating section 312 is controlled by the control unit 301 to perform processing related to the formation of an insulating layer. For example, the IC reinforcement plate insulating coating section 312 may form an insulating layer that adheres closely to one surface of the IC reinforcement plate. For example, the IC reinforcement plate insulating coating section 312 may form this insulating layer by painting or adhering an insulating material to one surface of the IC reinforcement plate. The IC reinforcement plate insulating coating section 312 may supply the IC reinforcement plate and the insulating layer to the IC reinforcement plate processing section 313. In this specification, the IC reinforcement plate insulating coating section 312 is also referred to as the IC reinforcement plate insulating layer forming section.

[0077] The IC reinforcement plate processing unit 313 is controlled by the control unit 301 to perform processing related to the processing of the IC reinforcement plate. For example, the IC reinforcement plate processing unit 313 may obtain the IC reinforcement plate and insulating layer supplied from the IC reinforcement plate insulating coating unit 312. The IC reinforcement plate processing unit 313 may also separate the IC reinforcement plate and insulating layer (an IC reinforcement plate formed with an insulating layer in close contact with one surface) into individual pieces. The IC reinforcement plate processing unit 313 may supply the separated IC reinforcement plate and insulating layer to the sealing reinforcement unit 314. Note that the IC reinforcement plate processing unit 313 may also be included in the IC reinforcement plate insulating layer forming unit.

[0078] The sealing and reinforcement unit 314 is controlled by the control unit 301 to perform sealing and reinforcement processes. For example, the sealing and reinforcement unit 314 may acquire the IC chip 113 and mounting substrate 111 supplied from the IC chip generation and mounting unit 311. The sealing and reinforcement unit 314 may acquire the IC reinforcement plate and insulating layer supplied from the IC reinforcement plate processing unit 313. The sealing and reinforcement unit 314 may also seal the acquired IC chip 113 and mounting substrate 111 with a sealing material. In other words, the sealing and reinforcement unit 314 may form sealing material 114 and sealing material 116. The sealing and reinforcement unit 314 may also laminate (bond) the acquired IC reinforcement plate and insulating layer to the surface of the sealing material 114 such that an insulating layer is formed between the sealing material 114 and the IC reinforcement plate. In other words, the sealing and reinforcement unit 314 may form the IC reinforcement plate 115 (first IC reinforcement plate) and insulating layer 118 (first reinforcement plate IC chip side insulating layer). In other words, the sealing reinforcement section 314 seals the IC chip 113 mounted on the mounting substrate 111 with sealing material 114 and sealing material 116, and the IC reinforcement plate 115 and insulating layer 118 may be laminated on the surface of the sealing material 114 on the mounting surface side of the mounting substrate 111 so that an insulating layer 118 is formed between the sealing material 114 and the IC reinforcement plate 115. Alternatively, the sealing reinforcement section 314 may laminate (adhere) the IC reinforcement plate to the surface of the sealing material 116. In other words, the sealing reinforcement section 314 may form an IC reinforcement plate 117 (second IC reinforcement plate). In other words, the sealing reinforcement section 314 may form the configuration of the IC module 100. Furthermore, the sealing reinforcement section 314 may supply the IC module component parting section 315 with the configuration of the IC module 100 formed as described above (from the mounting substrate 111 to the insulating layer 118).

[0079] The IC module fragmentation unit 315 is controlled by the control unit 301 and performs processing related to fragmenting the IC module 100. For example, the IC module fragmentation unit 315 may obtain the configuration of the IC module 100 (from the mounting substrate 111 to the insulating layer 118) supplied from the sealing reinforcement unit 314. The IC module fragmentation unit 315 may fragment the configuration into module units to form the IC module 100. The IC module fragmentation unit 315 may supply the fragmented IC module 100 to the IC card generation unit 316.

[0080] The IC card generation unit 316 is controlled by the control unit 301 and performs processing related to the generation of the IC card 130. For example, the IC card generation unit 316 may acquire an IC module 100 supplied from the IC module fragmentation unit 315. The IC card generation unit 316 may use the IC module 100 to form the components of the IC card 130. That is, the IC card generation unit 316 may form a resin core layer 132 and an outer covering material 133. The IC card generation unit 316 may supply the formed IC card components to the IC card fragmentation unit 317.

[0081] The IC card fragmentation unit 317 is controlled by the control unit 301 and performs processing related to fragmenting the IC card 130. For example, the IC card fragmentation unit 317 may obtain the configuration of the IC card 130 supplied from the IC card generation unit 316. The IC card fragmentation unit 317 may fragment the configuration into card units to form the IC card 130. The IC card fragmentation unit 317 may supply the fragmented IC card 130 to the inspection unit 318.

[0082] The inspection unit 318 is controlled by the control unit 301 and performs processing related to the inspection of the IC card 130. For example, the inspection unit 318 may acquire the IC card 130 supplied from the IC card fragmentation unit 317. The inspection unit 318 may perform quality inspections on the acquired IC card 130. The inspection unit 318 may supply the IC card 130 that has passed the inspection to the shipping process.

[0083] The input unit 321 consists of a keyboard, mouse, touch panel, and external input terminals, and receives user instructions and information from external sources, supplying them to the control unit 301. The output unit 322 consists of a display such as a CRT (Cathode Ray Tube) display or LCD (Liquid Crystal Display), speakers, and external output terminals, and outputs various information supplied from the control unit 301 as images, audio, analog signals, or digital data.

[0084] The storage unit 323 has any storage medium such as flash memory, SSD (Solid State Drive), or hard disk, and stores information supplied from the control unit 301, and reads and supplies the stored information in accordance with requests from the control unit 301.

[0085] The communication unit 324 consists of, for example, a wired LAN (Local Area Network) or wireless LAN interface or modem, and performs communication processing with external devices via a network including the Internet. For example, the communication unit 324 transmits information supplied from the control unit 301 to the communication partner, and supplies information received from the communication partner to the control unit 301.

[0086] The drive 325 is connected to the control unit 301 as needed. A removable media 331, such as a magnetic disk, optical disk, magneto-optical disk, or semiconductor memory, is then appropriately mounted on the drive 325. A computer program read from the removable media 331 via the drive 325 is then installed in the storage unit 323 as needed.

[0087] With this configuration, the manufacturing apparatus 300 can manufacture an IC card 130 (including the IC module 100) having the configuration described in the first embodiment. Therefore, the manufacturing apparatus 300 can suppress a reduction in the resistance of the IC card 130 (IC chip 113) to disturbances such as static electricity.

[0088] Furthermore, the manufacturing apparatus 300 can also manufacture IC modules 100. In that case, the IC card generation unit 316 and the IC card fragmentation unit 317 can be omitted. Therefore, the manufacturing apparatus 300 can suppress the reduction in the resistance of the IC module 100 (IC chip 113) to disturbances such as static electricity.

[0089] <Insulating Layer> The insulating coating portion 312 of the IC reinforcement plate (the insulating layer forming portion of the IC reinforcement plate) may be formed using any material. For example, the insulating coating portion 312 of the IC reinforcement plate may be formed by coating one surface of the IC reinforcement plate with an epoxy, polyimide, or polyamide-imide resin. Alternatively, the insulating coating portion 312 of the IC reinforcement plate may be formed by coating one surface of the IC reinforcement plate with a polypropylene, polystyrene, polyurethane, polyethylene, polyetheretherketone, or polycarbonate resin. Alternatively, the insulating coating portion 312 of the IC reinforcement plate may be formed by bonding an epoxy, polyimide, or polyamide-imide film to one surface of the IC reinforcement plate. Alternatively, the insulating coating portion 312 of the IC reinforcement plate may be formed by bonding a polypropylene, polystyrene, polyurethane, polyethylene, polyetheretherketone, or polycarbonate film to one surface of the IC reinforcement plate. In other words, the sealing reinforcement portion 314 may be formed by laminating (adhering) an insulating layer made of such materials to the surface of the sealing material 114 so that an insulating layer is formed between the sealing material 114 and the IC reinforcement plate, thereby forming the IC reinforcement plate 115 (first IC reinforcement plate) and the insulating layer 118 (first reinforcement plate IC chip side insulating layer). By doing so, it is possible to more reliably suppress the reduction in the resistance of the IC chip 113 to disturbances such as static electricity.

[0090] Furthermore, the IC reinforcement plate insulating coating portion 312 (IC reinforcement plate insulating layer forming portion) may be formed with any thickness of insulating layer. Generally, the thicker the insulating layer, the greater the resistance value and the greater the effect of improving resistance to disturbances. For example, the IC reinforcement plate insulating coating portion 312 may form an insulating layer with a thickness of 2 [µm] or more. In other words, the sealing reinforcement portion 314 may form the IC reinforcement plate 115 (first IC reinforcement plate) and insulating layer 118 (first reinforcement plate IC chip side insulating layer) by laminating (adhering) an insulating layer with a thickness of 2 [µm] or more on the surface of the sealing material 114 so that an insulating layer is formed between the sealing material 114 and the IC reinforcement plate. By doing so, it is possible to more reliably suppress the reduction of the IC chip 113's resistance to disturbances such as static electricity. Furthermore, the IC reinforcement plate insulating coating portion 312 may form an insulating layer with a thickness of 5 [µm] or more. In other words, the sealing reinforcement portion 314 may be formed by laminating (adhering) an insulating layer with a thickness of 5 [um] or more on the surface of the sealing material 114 so that an insulating layer is formed between the sealing material 114 and the IC reinforcement plate, thereby forming the IC reinforcement plate 115 (first IC reinforcement plate) and the insulating layer 118 (first reinforcement plate IC chip side insulating layer). By doing so, it is possible to more reliably suppress the reduction in the resistance of the IC chip 113 to disturbances such as static electricity.

[0091] Furthermore, the IC reinforcement plate insulating coating portion 312 (IC reinforcement plate insulating layer forming portion) may use a material with any volume resistivity to form the insulating layer. Generally, the higher the volume resistivity of the insulating layer, the greater the effect of improving resistance to disturbances. For example, the IC reinforcement plate insulating coating portion 312 may use a material with a volume resistivity of 10^11 [Ω・cm] or higher to form the insulating layer. In other words, the sealing reinforcement portion 314 may be formed by laminating (adhering) an insulating layer formed using a material with a volume resistivity of 10^11 [Ω・cm] or higher on the surface of the sealing material 114 so that an insulating layer is formed between the sealing material 114 and the IC reinforcement plate, thereby forming the IC reinforcement plate 115 (first IC reinforcement plate) and the insulating layer 118 (first reinforcement plate IC chip side insulating layer). By doing so, it is possible to more reliably suppress the reduction in the resistance of the IC chip 113 to disturbances such as static electricity.

[0092] Furthermore, the IC reinforcement plate insulating coating portion 312 (IC reinforcement plate insulating layer forming portion) may form an insulating layer over any area on the surface of the IC reinforcement plate. Generally, the wider the area of ​​the insulating layer, the greater the effect of improving resistance to disturbances. For example, the IC reinforcement plate insulating coating portion 312 may form an insulating layer over an area wider than the size of the IC chip 113 on the surface of the IC reinforcement plate. In other words, the sealing reinforcement portion 314 may form an insulating layer on the surface of the sealing material 114, such that an insulating layer is formed between the sealing material 114 and the IC reinforcement plate, by laminating (adhering) an insulating layer formed over an area wider than the size of the IC chip 113 on the surface of the IC reinforcement plate, thereby forming an IC reinforcement plate 115 (first IC reinforcement plate) and an insulating layer 118 (first reinforcement plate IC chip side insulating layer) formed in an area that includes the portion on which the IC chip 113 overlaps. By doing so, it is possible to suppress the reduction in the uniformity of the interface of the IC reinforcement plate 115 on the IC chip 113, and to more reliably suppress the reduction in the resistance of the IC chip 113 to disturbances such as static electricity.

[0093] <Multiple Insulating Layers> In the above description, a single insulating layer is formed, but multiple insulating layers may be formed. For example, the IC reinforcement plate insulating coating portion 312 (IC reinforcement plate insulating layer forming portion) may further form an insulating layer that adheres to the other surface of the IC reinforcement plate. That is, the IC reinforcement plate insulating coating portion 312 may form an insulating layer that adheres to each of the two surfaces of the IC reinforcement plate. The sealing reinforcement portion 314 may seal the IC chip 113 with a sealing material (forming sealing material 114 and sealing material 116), and an IC reinforcement plate with insulating layers adhering to both sides may be laminated on the surface of the sealing material 114 on the mounting surface side of the mounting substrate 111. In other words, the sealing reinforcement portion 314 may form the sealing material 114, sealing material 116, IC reinforcement plate 115 (first IC reinforcement plate), insulating layer 118 (first reinforcement plate IC chip side insulating layer), and insulating layer 151 (first reinforcement plate opposite side insulating layer) as shown in Figure 6. Furthermore, the sealing reinforcement portion 314 may form an IC reinforcement plate 117 (second IC reinforcement plate). By doing so, the occurrence of surface discharge at the interface of the IC reinforcement plate 115 can be further suppressed. In other words, the reduction in the resistance of the IC chip 113 to disturbances such as static electricity can be further suppressed.

[0094] In this case as well, the insulating layer of the IC reinforcement plate insulating coating portion 312 may be formed using any material. For example, the insulating layer of the IC reinforcement plate insulating coating portion 312 may be formed by coating the surface of the IC reinforcement plate with an epoxy, polyimide, polyamide-imide, polypropylene, polystyrene, polyurethane, polyethylene, polyetheretherketone, or polycarbonate resin. Alternatively, the insulating layer of the IC reinforcement plate insulating coating portion 312 may be formed by bonding an epoxy, polyimide, polyamide-imide, polypropylene, polystyrene, polyurethane, polyethylene, polyetheretherketone, or polycarbonate film to the surface of the IC reinforcement plate. In other words, the sealing reinforcement portion 314 may be formed by laminating (adhering) an IC reinforcement plate, which has insulating layers formed on both surfaces, with at least the insulating layer on the side opposite to the IC chip 113 being made of such a material, onto the surface of the sealing material 114 to form the IC reinforcement plate 115 (first IC reinforcement plate), insulating layer 118 (first reinforcement plate IC chip side insulating layer), and insulating layer 151 (first reinforcement plate opposite side insulating layer).

[0095] In this case as well, the insulating coating portion 312 of the IC reinforcement plate may be formed with any thickness of insulating layer, for example, it may be 2 [um] or more, or 5 [um] or more. In other words, the sealing reinforcement portion 314 may be formed by laminating (adhering) an IC reinforcement plate, in which insulating layers are formed on both surfaces and at least the insulating layer on the side opposite to the IC chip 113 has a thickness of 2 [um] or more, onto the surface of the sealing material 114 to form the IC reinforcement plate 115 (first IC reinforcement plate), insulating layer 118 (first reinforcement plate IC chip side insulating layer), and insulating layer 151 (first reinforcement plate opposite side insulating layer). Alternatively, the sealing reinforcement portion 314 may be formed by laminating (adhering) an IC reinforcement plate, in which insulating layers are formed on both surfaces and at least the insulating layer on the side opposite to the IC chip 113 has a thickness of 5 [um] or more, onto the surface of the sealing material 114 to form an IC reinforcement plate 115 (first IC reinforcement plate), an insulating layer 118 (first reinforcement plate IC chip side insulating layer), and an insulating layer 151 (first reinforcement plate opposite side insulating layer).

[0096] In this case as well, the insulating coating portion 312 of the IC reinforcement plate may use an insulating material with any volume resistivity to form the insulating layer. For example, the insulating coating portion 312 of the IC reinforcement plate may use a material with a volume resistivity of 10^11 [Ω・cm] or more to form the insulating layer. In other words, the sealing reinforcement portion 314 may be formed by laminating (adhering) an IC reinforcement plate, in which insulating layers are formed on both surfaces, and at least the insulating layer on the side opposite to the IC chip 113 is made of a material with a volume resistivity of 10^11 [Ω・cm] or more, onto the surface of the sealing material 114 to form the IC reinforcement plate 115 (first IC reinforcement plate), insulating layer 118 (first reinforcement plate IC chip side insulating layer), and insulating layer 151 (first reinforcement plate opposite side insulating layer).

[0097] In this case as well, the insulating coating portion 312 of the IC reinforcement plate may form an insulating layer over any area on the surface of the IC reinforcement plate. For example, the insulating coating portion 312 of the IC reinforcement plate may form an insulating layer over an area wider than the IC chip 113 on the surface of the IC reinforcement plate. In other words, the sealing reinforcement portion 314 may be formed by laminating (adhering) an IC reinforcement plate, in which insulating layers are formed on both surfaces, and at least the insulating layer on the side opposite to the IC chip 113 is formed over an area wider than the size of the IC chip 113, onto the surface of the sealing material 114 to form an IC reinforcement plate 115 (first IC reinforcement plate), an insulating layer 118 (first reinforcement plate IC chip side insulating layer), and an insulating layer 151 (first reinforcement plate opposite side insulating layer) formed in an area encompassing the portion of the surface of the IC reinforcement plate 115 over which the IC chip 113 overlaps.

[0098] Furthermore, the materials of the insulating layer 118 and insulating layer 151 formed as described above may be the same or different. Also, the layer thicknesses of the insulating layer 118 and insulating layer 151 formed as described above may be the same or different. Also, the volume resistivity of the insulating layer 118 and insulating layer 151 formed as described above may be the same or different. Also, the extents of the insulating layer 118 and insulating layer 151 formed as described above may be the same or different.

[0099] Furthermore, the sealing reinforcement portion 314 may seal the IC chip 113 with a sealing material (forming sealing material 114 and sealing material 116), and an IC reinforcement plate and an insulating layer may be laminated on the surface of the sealing material 114 on the mounting side of the mounting substrate 111 and the surface of the sealing material 116 on the non-mounting side of the mounting substrate 111, respectively, so that an insulating layer is formed between the sealing material and the IC reinforcement plate. In other words, the sealing reinforcement portion 314 may form the sealing material 114, sealing material 116, IC reinforcement plate 115 (first IC reinforcement plate), insulating layer 118 (first reinforcement plate IC chip side insulating layer), IC reinforcement plate 117 (second IC reinforcement plate), and insulating layer 152 (second reinforcement plate IC chip side insulating layer) as shown in Figure 6. By doing so, the occurrence of surface discharge at the interface of the IC reinforcement plate 117 can be suppressed in the same way as in the case of the IC reinforcement plate 115. That is, the reduction in the resistance of the IC chip 113 to disturbances such as static electricity can be further suppressed.

[0100] In this case as well, the insulating coating portion 312 of the IC reinforcement plate may use any material to form the insulating layer 152. For example, the insulating coating portion 312 of the IC reinforcement plate may form the insulating layer by coating the surface of the IC reinforcement plate with an epoxy, polyimide, polyamide-imide, polypropylene, polystyrene, polyurethane, polyethylene, polyetheretherketone, or polycarbonate resin. Alternatively, the insulating coating portion 312 of the IC reinforcement plate may form the insulating layer by bonding an epoxy, polyimide, polyamide-imide, polypropylene, polystyrene, polyurethane, polyethylene, polyetheretherketone, or polycarbonate film to the surface of the IC reinforcement plate. In other words, the sealing reinforcement portion 314 may be formed by laminating (bonding) an IC reinforcement plate having an insulating layer made of such material formed on its surface to the surface of the sealing material 116, so that an insulating layer is formed between the sealing material 116 and the IC reinforcement plate, thereby forming the IC reinforcement plate 117 (second IC reinforcement plate) and the insulating layer 152 (second reinforcement plate IC chip side insulating layer).

[0101] In this case as well, the insulating coating portion 312 of the IC reinforcement plate may be formed with any thickness of insulating layer, for example, it may be 2 [um] or more, or 5 [um] or more. In other words, the sealing reinforcement portion 314 may be formed by laminating (adhering) an IC reinforcement plate having an insulating layer of 2 [um] or more formed on its surface so as to form an insulating layer between the sealing material 116 and the IC reinforcement plate, thereby forming the IC reinforcement plate 117 (second IC reinforcement plate) and the insulating layer 152 (second reinforcement plate IC chip side insulating layer). Alternatively, the sealing reinforcement portion 314 may be formed by laminating (adhering) an IC reinforcement plate having an insulating layer of 5 [um] or more formed on its surface so as to form an insulating layer between the sealing material 116 and the IC reinforcement plate, thereby forming the IC reinforcement plate 117 (second IC reinforcement plate) and the insulating layer 152 (second reinforcement plate IC chip side insulating layer).

[0102] In this case as well, the insulating coating portion 312 of the IC reinforcement plate may use a material with a volume resistivity of any value to form the insulating layer. For example, the insulating coating portion 312 of the IC reinforcement plate may use a material with a volume resistivity of 10^11 [Ω・cm] or more to form the insulating layer. In other words, the sealing reinforcement portion 314 may be formed by laminating (adhering) an IC reinforcement plate having an insulating layer with a volume resistivity of 10^11 [Ω・cm] or more formed on its surface to the surface of the sealing material 116, so that an insulating layer is formed between the sealing material 116 and the IC reinforcement plate, thereby forming the IC reinforcement plate 117 (second IC reinforcement plate) and the insulating layer 152 (second reinforcement plate IC chip side insulating layer).

[0103] In this case as well, the insulating coating portion 312 of the IC reinforcement plate may form an insulating layer over any area on the surface of the IC reinforcement plate. For example, the insulating coating portion 312 of the IC reinforcement plate may form an insulating layer over an area on the surface of the IC reinforcement plate that is larger than the size of the IC chip 113. In other words, the sealing reinforcement portion 314 may be formed by laminating (adhering) an IC reinforcement plate on the surface of the sealing material 116 such that an insulating layer is formed between the sealing material 116 and the IC reinforcement plate, thereby forming an insulating layer 152 (second reinforcement plate IC chip side insulating layer) formed in an area that encompasses the portion of the surface of the IC reinforcement plate 115 over which the IC chip 113 overlaps.

[0104] Furthermore, the materials of the insulating layer 118 and insulating layer 152 formed as described above may be the same or different. Also, the layer thicknesses of the insulating layer 118 and insulating layer 152 formed as described above may be the same or different. Also, the volume resistivity of the insulating layer 118 and insulating layer 152 formed as described above may be the same or different. Also, the extents of the insulating layer 118 and insulating layer 152 formed as described above may be the same or different.

[0105] Furthermore, the sealing reinforcement portion 314 may seal the IC chip 113 with a sealing material (forming sealing material 114 and sealing material 116), and laminate the IC reinforcement plate and insulating layer on the surface of the sealing material 114 on the mounting side of the mounting substrate 111 so that an insulating layer is formed between the sealing material and the IC reinforcement plate, and laminate the IC reinforcement plate and insulating layer on the surface of the sealing material 116 on the non-mounting side of the mounting substrate 111 so that an IC reinforcement plate is formed between the sealing material and the insulating layer. In other words, the sealing reinforcement portion 314 may form the sealing material 114, sealing material 116, IC reinforcement plate 115 (first IC reinforcement plate), insulating layer 118 (first reinforcement plate IC chip side insulating layer), IC reinforcement plate 117 (second IC reinforcement plate), and insulating layer 153 (first reinforcement plate opposite side insulating layer) as shown in Figure 6. By doing so, the occurrence of surface discharge at the interface of the IC reinforcement plate 115 can be further suppressed. That is, the reduction in the resistance of the IC chip 113 to disturbances such as static electricity can be further suppressed.

[0106] In this case as well, the insulating layer of the IC reinforcement plate insulating coating portion 312 may be formed using any material. For example, the insulating layer of the IC reinforcement plate insulating coating portion 312 may be formed by coating the surface of the IC reinforcement plate with an epoxy, polyimide, polyamide-imide, polypropylene, polystyrene, polyurethane, polyethylene, polyetheretherketone, or polycarbonate resin. Alternatively, the insulating layer of the IC reinforcement plate insulating coating portion 312 may be formed by bonding an epoxy, polyimide, polyamide-imide, polypropylene, polystyrene, polyurethane, polyethylene, polyetheretherketone, or polycarbonate film to the surface of the IC reinforcement plate. In other words, the sealing reinforcement portion 314 may be formed by laminating (bonding) an IC reinforcement plate with an insulating layer made of such material formed on its surface to the surface of the sealing material 116, so that the IC reinforcement plate is formed between the sealing material 116 and the insulating layer, thereby forming the IC reinforcement plate 117 (second IC reinforcement plate) and the insulating layer 153 (insulating layer on the opposite side of the second reinforcement plate).

[0107] In this case as well, the insulating coating portion 312 of the IC reinforcement plate may have an insulating layer of any thickness, for example, it may be 2 [um] or more, or 5 [um] or more. In other words, the sealing reinforcement portion 314 may form the IC reinforcement plate 117 (second IC reinforcement plate) and insulating layer 153 (insulating layer on the opposite side of the second reinforcement plate) by laminating (adhering) an IC reinforcement plate having an insulating layer of 2 [um] or more formed on its surface so that the IC reinforcement plate is formed between the sealing material 116 and the insulating layer. Alternatively, the sealing reinforcement portion 314 may form the IC reinforcement plate 117 (second IC reinforcement plate) and insulating layer 153 (insulating layer on the opposite side of the second reinforcement plate) by laminating (adhering) an IC reinforcement plate having an insulating layer of 5 [um] or more formed on its surface so that the insulating layer is formed between the sealing material 116 and the IC reinforcement plate.

[0108] In this case as well, the insulating coating portion 312 of the IC reinforcement plate may be formed using a material with a volume resistivity of any value. For example, the insulating coating portion 312 of the IC reinforcement plate may be formed using a material with a volume resistivity of 10^11 [Ω・cm] or more. In other words, the sealing reinforcement portion 314 may be formed by laminating (adhering) an IC reinforcement plate having an insulating layer with a volume resistivity of 10^11 [Ω・cm] or more formed on its surface to the surface of the sealing material 116, so that the IC reinforcement plate is formed between the sealing material 116 and the insulating layer, thereby forming the IC reinforcement plate 117 (second IC reinforcement plate) and the insulating layer 153 (insulating layer on the opposite side of the second reinforcement plate).

[0109] In this case as well, the IC reinforcement plate insulating coating portion 312 may form the insulating layer over any area on the surface of the IC reinforcement plate. For example, the IC reinforcement plate insulating coating portion 312 may form the insulating layer over an area on the surface of the IC reinforcement plate 117 that is larger than the size of the IC chip 113. In other words, the sealing reinforcement portion 314 may be formed by laminating (adhering) an IC reinforcement plate on the surface of the sealing material 116 such that the IC reinforcement plate is formed between the sealing material 116 and the insulating layer, thereby forming the IC reinforcement plate 117 (second IC reinforcement plate) and the insulating layer 153 (insulating layer on the opposite side of the second reinforcement plate) formed in an area that encompasses the portion on the surface of the IC reinforcement plate 115 over which the IC chip 113 overlaps.

[0110] Furthermore, the materials of the insulating layer 118 and insulating layer 153 formed as described above may be the same or different. Also, the layer thicknesses of the insulating layer 118 and insulating layer 153 formed as described above may be the same or different. Also, the volume resistivity of the insulating layer 118 and insulating layer 153 formed as described above may be the same or different. Also, the extents of the insulating layer 118 and insulating layer 153 formed as described above may be the same or different.

[0111] The combination of insulating layers is not limited to these examples. For example, the sealing reinforcement portion 314 may form insulating layer 118, insulating layer 151, and insulating layer 152. Alternatively, the sealing reinforcement portion 314 may form insulating layer 118, insulating layer 151, and insulating layer 153. Alternatively, the sealing reinforcement portion 314 may form insulating layer 118, insulating layer 152, and insulating layer 153. Alternatively, the sealing reinforcement portion 314 may form insulating layer 118, insulating layer 151, insulating layer 152, and insulating layer 153. By forming more insulating layers with the sealing reinforcement portion 314, the reduction in the IC chip 113's resistance to disturbances such as static electricity can be further suppressed.

[0112] When applying three or more insulating layers in combination in this manner, the insulating materials constituting each insulating layer may or may not be the same. Furthermore, the thickness of each insulating layer may or may not be the same. Also, the volume resistivity of each insulating layer may or may not be the same. Finally, the area in which each insulating layer is formed may or may not be the same.

[0113] <Manufacturing Process Flow> Next, an example of the manufacturing process flow performed by the manufacturing apparatus 300 will be explained with reference to the flowchart in Figure 8.

[0114] When the manufacturing process begins, the IC chip generation and mounting unit 311 of the manufacturing apparatus 300 generates an IC chip 113 in step S301 and mounts the IC chip 113 onto the mounting substrate 111.

[0115] In step S302, the IC reinforcement plate insulating coating section 312 applies an insulating material to the IC reinforcement plate, forming an insulating layer that adheres closely to one surface of the IC reinforcement plate.

[0116] In step S303, the IC reinforcement plate processing unit 313 processes the IC reinforcement plate to which the insulating layer adheres.

[0117] In step S304, the sealing reinforcement section 314 seals the IC chip 113 mounted on the mounting substrate 111 and reinforces it with an IC reinforcement plate on which the insulating layer adheres. For example, the sealing reinforcement section 314 seals the IC chip 113 mounted on the mounting substrate 111 with a sealing material, and laminates the IC reinforcement plate and insulating layer on the surface of the sealing material on the mounting side of the mounting substrate 111 so that an insulating layer is formed between the sealing material and the IC reinforcement plate. In other words, the sealing reinforcement section 314 forms the configuration of the sealing material 114, IC reinforcement plate 115, insulating layer 118, sealing material 116, IC reinforcement plate 117, etc. shown in Figure 3.

[0118] In step S305, the IC module fragmentation unit 315 fragments the components of the IC module formed by the processing up to step S304 to form the IC module 100.

[0119] In step S306, the IC card generation unit 316 uses its IC module 100 to form the configuration of an IC card.

[0120] In step S307, the IC card fragmentation unit 317 fragments the components of the IC card to form the IC card 130.

[0121] In step S308, the inspection unit 318 inspects the quality of the IC card 130.

[0122] When the process in step S308 is completed, the manufacturing process is finished.

[0123] By performing each process as described above, the manufacturing apparatus 300 can manufacture an IC card 130 (including the IC module 100) having the configuration described in the first embodiment. Therefore, the manufacturing apparatus 300 can suppress the reduction in the resistance of the IC card 130 (IC chip 113) to disturbances such as static electricity.

[0124] <5. Addendum> <Software> The series of processes described above can be executed by hardware or by software. When the series of processes described above are executed by software, the programs that make up the software are installed from a network or storage medium.

[0125] This recording medium, as shown in Figure 7, for example, consists of a removable media 331 on which a program is recorded, which is distributed separately from the main device body to the user for the purpose of delivering the program. This removable media 331 includes magnetic disks (including flexible disks) and optical disks (including CD-ROMs and DVDs). Furthermore, it also includes magneto-optical disks (including MDs (Mini Discs)) and semiconductor memory. In this case, for example, by inserting the removable media 331 into the drive 325, the program stored on the removable media 331 can be read and installed into the storage unit 323.

[0126] Furthermore, this program can also be provided via wired or wireless transmission media such as local area networks, the internet, or digital satellite broadcasting. In that case, the program can be received by the communication unit 324 and installed in the storage unit 323.

[0127] In addition, this program can be pre-installed in memory units or ROMs. For example, the program can be pre-installed in ROMs built into memory unit 323 or control unit 301.

[0128] <Applications of this technology> This technology can be applied to any configuration. For example, this technology can be applied to various electronic devices. Furthermore, this technology can also be implemented as part of a device, such as a processor as a system LSI (Large Scale Integration) (e.g., a video processor), a module using multiple processors (e.g., a video module), a unit using multiple modules (e.g., a video unit), or a set with additional functions added to a unit (e.g., a video set).

[0129] Furthermore, this technology can also be applied to network systems composed of multiple devices. For example, this technology may be implemented as cloud computing, where multiple devices share and collaborate on processing via a network. For example, this technology may be implemented in a cloud service that provides image (video) related services to any terminal such as computers, AV (Audio Visual) equipment, portable information processing terminals, and IoT (Internet of Things) devices.

[0130] In this specification, a system refers to a collection of multiple components (devices, modules (parts), etc.), regardless of whether all components are located in the same enclosure. Therefore, multiple devices housed in separate enclosures and connected via a network, and a single device containing multiple modules within a single enclosure, are both considered systems.

[0131] <Applicable Fields and Applications of This Technology> IC modules, IC cards, manufacturing equipment, processing units, or systems incorporating these devices can be used in any field, such as transportation, medical care, security, agriculture, livestock farming, mining, beauty, factories, home appliances, weather, and nature monitoring. The applications are also arbitrary.

[0132] For example, this technology can be applied to systems and devices used to provide entertainment content. Furthermore, for example, this technology can be applied to systems and devices used for traffic management, such as traffic condition monitoring and automated driving control. In addition, for example, this technology can be applied to systems and devices used for security. Furthermore, for example, this technology can be applied to systems and devices used for automatic control of machinery, etc. Furthermore, for example, this technology can be applied to systems and devices used for agriculture and livestock farming. Furthermore, for example, this technology can be applied to systems and devices that monitor natural conditions such as volcanoes, forests, and oceans, as well as wildlife. Furthermore, for example, this technology can be applied to systems and devices used for sports.

[0133] <Other> Furthermore, the embodiments of this technology are not limited to those described above, and various modifications are possible without departing from the gist of this technology.

[0134] For example, the configuration described as a single device (or processing unit) may be divided and configured as multiple devices (or processing units). Conversely, the configurations described above as multiple devices (or processing units) may be combined and configured as a single device (or processing unit). Furthermore, it is also possible to add configurations other than those described above to the configuration of each device (or each processing unit). In addition, if the overall system configuration and operation are substantially the same, a part of the configuration of one device (or processing unit) may be included in the configuration of another device (or other processing unit).

[0135] Furthermore, for example, the program described above may be executed on any device. In that case, the device should have the necessary functions (such as functional blocks) and be able to obtain the necessary information.

[0136] Furthermore, for example, each step of a flowchart may be executed by one device, or it may be divided among multiple devices. Additionally, if a single step includes multiple processes, these processes may be executed by one device, or they may be divided among multiple devices. In other words, multiple processes included in a single step can be executed as multiple steps. Conversely, processes described as multiple steps can be combined and executed as a single step.

[0137] Furthermore, for example, a program executed by a computer may be structured so that the steps of the program are executed chronologically in the order described herein, or they may be executed in parallel or individually at necessary times, such as when a call is made. In other words, the steps may be executed in an order different from the order described above, as long as no inconsistencies arise. Moreover, the steps of this program may be executed in parallel with the processing of other programs, or in combination with the processing of other programs.

[0138] Furthermore, for example, multiple technologies relating to this technology can be implemented independently, as long as they do not create a contradiction. Of course, any multiple technologies can also be implemented in combination. For example, some or all of the technologies described in one embodiment can be implemented in combination with some or all of the technologies described in another embodiment. Also, some or all of the above-mentioned technologies can be implemented in combination with other technologies not mentioned above.

[0139] Furthermore, this technology can also take the following configurations: (1) An IC module comprising: an IC chip mounted on a mounting substrate and sealed with a sealing material; a first IC reinforcing plate formed on the mounting surface side of the mounting substrate; and a first reinforcing plate IC chip-side insulating layer formed between the surface of the sealing material formed on the side of the IC chip opposite the mounting substrate and the first IC reinforcing plate, in close contact with the IC chip-side surface of the first IC reinforcing plate. (2) The IC module according to (1), wherein the first reinforcing plate IC chip-side insulating layer is formed of a material with a volume resistivity of 10^11 [Ω・cm] or more. (3) The IC module according to (2), wherein the first reinforcing plate IC chip-side insulating layer is formed of an epoxy resin or film, a polyimide resin or film, a polyamide-imide resin or film, a polypropylene resin or film, a polystyrene resin or film, a polyurethane resin or film, a polyethylene resin or film, a polyetheretherketone resin or film, or a polycarbonate resin or film. (4) The IC module according to any one of (1) to (3), wherein the thickness of the first reinforcing plate IC chip side insulating layer is 2 [um] or more. (5) The IC module according to any one of (1) to (4), wherein the first reinforcing plate IC chip side insulating layer is formed in a range that includes the portion of the surface of the first IC reinforcing plate over which the IC chip is superimposed. (6) The IC module according to any one of (1) to (5), further comprising a first reinforcing plate opposite side insulating layer formed in close contact with the surface of the first IC reinforcing plate opposite to the IC chip. (7) The IC module according to any one of (1) to (6), further comprising a second IC reinforcing plate formed on the non-mounted side of the mounting substrate, and a second reinforcing plate IC chip side insulating layer formed in close contact with the IC chip side surface of the second IC reinforcing plate between the surface of the sealing material formed on the non-mounted side of the mounting substrate and the second IC reinforcing plate.(8) The IC module according to any one of (1) to (7), further comprising a second IC reinforcing plate formed on the non-mounting side of the mounting substrate, and a second reinforcing plate opposite insulating layer formed in close contact with the surface of the second IC reinforcing plate opposite to the IC chip. (9) The IC module according to any one of (1) to (8), wherein the mounting substrate has an antenna used for communication performed by the IC chip.

[0140] (21) An IC card comprising: an IC chip mounted on a mounting substrate and sealed with a sealing material; a first IC reinforcing plate formed on the mounting surface side of the mounting substrate; and a first reinforcing plate IC chip side insulating layer formed between the surface of the sealing material formed on the side of the IC chip opposite the mounting substrate and the first IC reinforcing plate, in close contact with the IC chip side surface of the first IC reinforcing plate. (22) The IC card according to (21), wherein the first reinforcing plate IC chip side insulating layer is formed of a material with a volume resistivity of 10^11 [Ω・cm] or more. (23) The IC card according to (22), wherein the first reinforcing plate IC chip side insulating layer is formed of an epoxy resin or film, a polyimide resin or film, a polyamide-imide resin or film, a polypropylene resin or film, a polystyrene resin or film, a polyurethane resin or film, a polyethylene resin or film, a polyetheretherketone resin or film, or a polycarbonate resin or film. (24) The IC card according to any one of (21) to (23), wherein the thickness of the first reinforcing plate IC chip side insulating layer is 2 [um] or more. (25) The IC card according to any one of (21) to (24), wherein the first reinforcing plate IC chip side insulating layer is formed in a range that includes the portion of the surface of the first IC reinforcing plate over which the IC chip is superimposed. (26) The IC card according to any one of (21) to (25), further comprising a first reinforcing plate opposite side insulating layer formed in close contact with the surface of the first IC reinforcing plate opposite to the IC chip. (27) The IC card according to any one of (21) to (26), further comprising a second IC reinforcing plate formed on the non-mounted side of the mounting substrate, and a second reinforcing plate IC chip side insulating layer formed in close contact with the IC chip side surface of the second IC reinforcing plate between the surface of the sealing material formed on the non-mounted side of the mounting substrate and the second IC reinforcing plate. (28) The IC card according to any one of (21) to (27), further comprising a second IC reinforcing plate formed on the non-mounting side of the mounting substrate, and a second reinforcing plate opposite insulating layer formed in close contact with the surface of the second IC reinforcing plate opposite to the IC chip.(29) The IC card according to any one of (21) to (28), wherein the mounting board has an antenna used for communication performed by the IC chip.

[0141] (41) An IC module manufacturing apparatus comprising: an IC chip generation and mounting unit for generating IC chips and mounting them on a mounting substrate; an IC reinforcement board insulating layer forming unit for forming an insulating layer that adheres to one surface of an IC reinforcement board; and a sealing and reinforcement unit for sealing the IC chips with a sealing material and laminating the IC reinforcement board and the insulating layer on the surface of the sealing material on the mounting surface side of the mounting substrate so that the insulating layer is formed between the sealing material and the IC reinforcement board. (42) The manufacturing apparatus according to (41), wherein the IC reinforcement board insulating layer forming unit forms the insulating layer using a material with a volume resistivity of 10^11 [Ω・cm] or more. (43) The manufacturing apparatus according to (42), wherein the IC reinforcement board insulating layer forming unit forms the insulating layer by coating one surface of the IC reinforcement board with an epoxy, polyimide, polyamide-imide, polypropylene, polystyrene, polyurethane, polyethylene, polyetheretherketone, or polycarbonate resin. (44) The manufacturing apparatus according to (42), wherein the IC reinforcement plate insulating layer forming section forms the insulating layer by bonding an epoxy, polyimide, polyamide-imide, polypropylene, polystyrene, polyurethane, polyethylene, polyetheretherketone, or polycarbonate film to one surface of the IC reinforcement plate. (45) The manufacturing apparatus according to any one of (41) to (44), wherein the IC reinforcement plate insulating layer forming section forms the insulating layer having a layer thickness of 2 [um] or more. (46) The manufacturing apparatus according to any one of (41) to (45), wherein the IC reinforcement plate insulating layer forming section forms the insulating layer in a range that includes the portion of the surface of the IC reinforcement plate on which the IC chip is superimposed. (47) The manufacturing apparatus according to any one of (41) to (46), wherein the IC reinforcement plate insulating layer forming section further forms the insulating layer that adheres to the other surface of the IC reinforcement plate, the sealing reinforcement section seals the IC chip with the sealing material, and the IC reinforcement plate, with the insulating layer adhering to both sides, is laminated on the surface of the sealing material on the mounting surface side of the mounting substrate.(48) The manufacturing apparatus according to any one of (41) to (47), wherein the sealing reinforcement portion seals the IC chip with the sealing material, and laminates the IC reinforcement plate and the insulating layer on the surface of the sealing material on the mounting side of the mounting substrate and on the surface of the sealing material on the non-mounting side of the mounting substrate, respectively, so that the insulating layer is formed between the sealing material and the IC reinforcement plate. (49) The manufacturing apparatus according to any one of (41) to (48), wherein the sealing reinforcement portion seals the IC chip with the sealing material, and laminates the IC reinforcement plate and the insulating layer on the surface of the sealing material on the mounting side of the mounting substrate so that the insulating layer is formed between the sealing material and the IC reinforcement plate, and laminates the IC reinforcement plate and the insulating layer on the surface of the sealing material on the non-mounting side of the mounting substrate so that the IC reinforcement plate is formed between the sealing material and the insulating layer. (50) A method for manufacturing an IC module, comprising: generating an IC chip and mounting it on a mounting substrate; forming an insulating layer that adheres to one surface of an IC reinforcement plate; sealing the IC chip with a sealing material and laminating the IC reinforcement plate and the insulating layer on the surface of the sealing material on the mounting surface side of the mounting substrate such that the insulating layer is formed between the sealing material and the IC reinforcement plate. (51) A program for causing a computer to perform a process for manufacturing an IC module, which includes generating an IC chip and mounting it on a mounting substrate; forming an insulating layer that adheres to one surface of an IC reinforcement plate; sealing the IC chip with a sealing material and laminating the IC reinforcement plate and the insulating layer on the surface of the sealing material on the mounting surface side of the mounting substrate such that the insulating layer is formed between the sealing material and the IC reinforcement plate.

[0142] 100 IC module, 111 mounting board, 112 ACF, 113 IC chip, 114 encapsulating material, 115 IC reinforcing plate, 116 encapsulating material, 117 IC reinforcing plate, 118 insulating layer, 130 IC card, 131 antenna, 132 resin core layer, 133 exterior material, 141 to 143 void, 151 to 153 insulating layer, 300 manufacturing apparatus, 301 control unit, 311 IC chip generation and mounting unit, 312 IC reinforcing plate insulating coating unit, 313 IC reinforcing plate processing unit, 314 encapsulating and reinforcing unit, 315 IC module fragmentation unit, 316 IC card generation unit, 317 IC card fragmentation unit, 318 inspection unit, 321 input unit, 322 output unit, 323 storage unit, 324 Communications section, 325 Drive, 331 Removable media

Claims

1. An IC module comprising: an IC chip mounted on a mounting substrate and sealed with a sealing material; a first IC reinforcing plate formed on the mounting surface side of the mounting substrate; and a first reinforcing plate IC chip side insulating layer formed between the surface of the sealing material formed on the side of the IC chip opposite the mounting substrate and the first IC reinforcing plate, in close contact with the IC chip side surface of the first IC reinforcing plate.

2. The IC module according to claim 1, wherein the first reinforcing plate IC chip-side insulating layer is formed of a material with a volume resistivity of 10^11 [Ω・cm] or more.

3. The IC module according to claim 2, wherein the first reinforcing plate IC chip side insulating layer is formed of an epoxy resin or film, a polyimide resin or film, a polyamide-imide resin or film, a polypropylene resin or film, a polystyrene resin or film, a polyurethane resin or film, a polyethylene resin or film, a polyetheretherketone resin or film, or a polycarbonate resin or film.

4. The IC module according to claim 1, wherein the thickness of the insulating layer on the IC chip side of the first reinforcing plate is 2 [um] or more.

5. The IC module according to claim 1, wherein the insulating layer on the IC chip side of the first reinforcing plate is formed in a range that includes the portion of the surface of the first IC reinforcing plate over which the IC chip is superimposed.

6. The IC module according to claim 1, further comprising a first reinforcing plate opposite-side insulating layer formed in close contact with the surface of the first IC reinforcing plate opposite to the IC chip.

7. The IC module according to claim 1, further comprising: a second IC reinforcing plate formed on the non-mounted side of the mounting substrate; and a second reinforcing plate IC chip side insulating layer formed between the surface of the sealing material formed on the non-mounted side of the mounting substrate and the second IC reinforcing plate, in close contact with the IC chip side surface of the second IC reinforcing plate.

8. The IC module according to claim 1, further comprising a second IC reinforcing plate formed on the non-mounted side of the mounting substrate, and a second reinforcing plate opposite insulating layer formed in close contact with the surface of the second IC reinforcing plate opposite to the IC chip.

9. The IC module according to claim 1, wherein the mounting substrate has an antenna used for communication performed by the IC chip.

10. An IC card comprising: an IC chip mounted on a mounting substrate and sealed with a sealing material; a first IC reinforcing plate formed on the mounting surface side of the mounting substrate; and a first reinforcing plate IC chip side insulating layer formed between the surface of the sealing material formed on the side of the IC chip opposite the mounting substrate and the first IC reinforcing plate, in close contact with the IC chip side surface of the first IC reinforcing plate.

11. An IC module manufacturing apparatus comprising: an IC chip generation and mounting unit for generating IC chips and mounting them on a mounting substrate; an IC reinforcement plate insulating layer forming unit for forming an insulating layer that adheres to one surface of an IC reinforcement plate; and a sealing and reinforcement unit for sealing the IC chips with a sealing material and laminating the IC reinforcement plate and the insulating layer on the surface of the sealing material on the mounting surface side of the mounting substrate such that the insulating layer is formed between the sealing material and the IC reinforcement plate.

12. The manufacturing apparatus according to claim 11, wherein the IC reinforcement plate insulating layer forming section uses a material with a volume resistivity of 10^11 [Ω・cm] or more to form the insulating layer.

13. The manufacturing apparatus according to claim 12, wherein the IC reinforcement plate insulating layer forming section forms the insulating layer by coating one surface of the IC reinforcement plate with an epoxy, polyimide, polyamide-imide, polypropylene, polystyrene, polyurethane, polyethylene, polyetheretherketone, or polycarbonate resin.

14. The manufacturing apparatus according to claim 12, wherein the IC reinforcement plate insulating layer forming section forms the insulating layer by adhering an epoxy, polyimide, polyamide-imide, polypropylene, polystyrene, polyurethane, polyethylene, polyetheretherketone, or polycarbonate film to one surface of the IC reinforcement plate.

15. The manufacturing apparatus according to claim 11, wherein the IC reinforcement plate insulating layer forming section forms the insulating layer having a layer thickness of 2 [um] or more.

16. The manufacturing apparatus according to claim 11, wherein the IC reinforcement plate insulating layer forming section forms the insulating layer in a range that includes the portion of the surface of the IC reinforcement plate on which the IC chip is superimposed.

17. The manufacturing apparatus according to claim 11, wherein the IC reinforcement plate insulating layer forming portion further forms the insulating layer that adheres to the other surface of the IC reinforcement plate, the sealing reinforcement portion seals the IC chip with the sealing material, and the IC reinforcement plate, with the insulating layer adhering to both sides, is laminated on the surface of the sealing material on the mounting surface side of the mounting substrate.

18. The manufacturing apparatus according to claim 11, wherein the sealing reinforcement portion seals the IC chip with the sealing material, and the IC reinforcement plate and the insulating layer are laminated on the surface of the sealing material on the mounting side of the mounting substrate and on the surface of the sealing material on the non-mounting side of the mounting substrate, respectively, so that the insulating layer is formed between the sealing material and the IC reinforcement plate.

19. The manufacturing apparatus according to claim 11, wherein the sealing reinforcement portion seals the IC chip with the sealing material, laminates the IC reinforcement plate and the insulating layer on the surface of the sealing material on the mounting side of the mounting substrate so that the insulating layer is formed between the sealing material and the IC reinforcement plate, and laminates the IC reinforcement plate and the insulating layer on the surface of the sealing material on the non-mounting side of the mounting substrate so that the IC reinforcement plate is formed between the sealing material and the insulating layer.

20. A method for manufacturing an IC module, comprising: generating an IC chip and mounting it on a mounting substrate; forming an insulating layer that adheres to one surface of an IC reinforcing plate; sealing the IC chip with a sealing material and laminating the IC reinforcing plate and the insulating layer on the surface of the sealing material on the mounting surface side of the mounting substrate such that the insulating layer is formed between the sealing material and the IC reinforcing plate.

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