Detachment device and detachment method

Abstract

This detachment device comprises: a holding unit that holds a second substrate of a bonded substrate in which a first substrate and the second substrate are joined; a plurality of suction bodies that suction the first substrate; a support member that supports the plurality of suction bodies; and an actuator that moves the support member to detach the first substrate, being suctioned by the plurality of suction bodies, from the second substrate. The support member is provided with a sensor capable of detecting a distortion of the support member or a force applied to the support member.

Description

Peeling Device and Peeling Method

[0001] The present disclosure relates to a peeling device and a peeling method.

[0002] Patent Document 1 discloses a peeling device that peels two substrates (a processed substrate and a support substrate) constituting a polymerized substrate. This peeling device forms a cut site by inserting a blade between the two substrates, and then moves the upper adsorption holding part (the second holding part) downward to adsorb the support substrate, and raises the support substrate from the entry side of the blade to separate the processed substrate and the support substrate.

[0003] Japanese Patent Application Laid-Open No. 2015-207776

[0004] The present disclosure provides a technique capable of suppressing breakage of a substrate and peeling a polymerized substrate.

[0005] According to one aspect of the present disclosure, there is provided a peeling device including: a holding part that holds the second substrate of a polymerized substrate in which a first substrate and a second substrate are joined; a plurality of adsorbents that adsorb the first substrate; a support member that supports the plurality of adsorbents; and an actuator that separates the first substrate adsorbed by the plurality of adsorbents from the second substrate by moving the support member, wherein a sensor capable of detecting distortion of the support member or a force applied to the support member is provided on the support member.

[0006] According to one aspect, it is possible to suppress breakage of a substrate and peel a polymerized substrate.

[0007] This is a schematic plan view showing the peeling system according to the embodiment. This is a schematic side view showing the configuration of the transfer station of the peeling system. Figure 3(A) is a side cross-sectional view showing the polymerization substrate, dicing frame, and dicing tape. Figure 3(B) is a plan view showing the polymerization substrate, dicing frame, and dicing tape. This is a partial side cross-sectional view showing the configuration of the peeling apparatus according to the embodiment. This is a plan view showing the support member, upper adsorption group, and blade. Figure 6(A) is the first figure showing the procedure for peeling a polymerization wafer. Figure 6(B) is the second figure showing the procedure for peeling a polymerization wafer. Figure 6(C) is the third figure showing the procedure for peeling a polymerization wafer. Figure 6(D) is the fourth figure showing the procedure for peeling a polymerization wafer. This figure illustrates strain distribution information of the support member based on sensor detection information. This is a flowchart showing the processing flow of the peeling method according to the embodiment.

[0008] The following describes embodiments for implementing this disclosure with reference to the drawings. In each drawing, the same components are denoted by the same reference numeral, and redundant explanations may be omitted. In the following description, the X-axis, Y-axis, and Z-axis directions are perpendicular to each other, the X-axis and Y-axis directions are horizontal, and the Z-axis direction is vertical.

[0009] <Configuration of the peeling system 100> First, the configuration of the peeling system 100 according to the embodiment will be described with reference to Figures 1 and 2. The peeling system 100 includes a peeling device 7 for peeling off a polymer substrate T formed by joining a first substrate W1 and a second substrate W2. The peeling system 100 is a system in which the polymer substrate T is brought into the peeling device 7, the polymer substrate T is peeled off by the peeling device 7, and the peeled first substrate W1 and second substrate W2 are each discharged from the peeling device 7.

[0010] The first substrate W1 and the second substrate W2 constituting the polymerized substrate T are formed as circular discs of substantially the same shape (same diameter). Hereinafter, using the example shown in Figure 3(A) as a reference, the first substrate W1 may be referred to as "upper wafer W1", the second substrate W2 as "lower wafer W2", and the polymerized substrate T as "polymerized wafer T". Furthermore, below, the surface of the upper wafer W1 that is joined to the lower wafer W2 will be referred to as the "joining surface W1j", and the surface opposite to the joining surface W1j will be referred to as the "non-joining surface W1n". Similarly, the surface of the lower wafer W2 that is joined to the upper wafer W1 will be referred to as the "joining surface W2j", and the surface opposite to the joining surface W2j will be referred to as the "non-joining surface W2n". Note that the polymerized wafer T, upper wafer W1, and lower wafer W2 may have shapes other than circular (e.g., polygonal shapes).

[0011] At least one of the upper wafer W1 and the lower wafer W2 is a substrate on which multiple electronic circuits are formed, such as a silicon wafer or a compound semiconductor wafer. Examples of compound semiconductor wafers include GaAs wafers, SiC wafers, GaN wafers, or InP wafers. One of the upper wafer W1 and the lower wafer W2 may be a bare wafer on which no electronic circuits are formed.

[0012] In the example shown in Figure 3(A), a polymerized wafer T is presented, in which a support substrate is applied as the upper wafer W1 and a silicon wafer on which an electronic circuit is formed is applied as the lower wafer W2. In this case, the thickness of the upper wafer W1, which is the support substrate, is formed to be greater than the thickness of the lower wafer W2. The material of the upper wafer W1 is not particularly limited and may be made of silicon, or of quartz glass or the like.

[0013] The bonding surface W1j of the upper wafer W1 and the bonding surface W2j of the lower wafer W2 are joined by an adhesive G. The type of adhesive G is not particularly limited, and an appropriate resin material may be selected depending on the material of the upper wafer W1 and the material of the lower wafer W2. Alternatively, the upper wafer W1 and the lower wafer W2 may be chemically bonded. For example, the upper wafer W1 and the lower wafer W2 can be bonded by van der Waals forces and hydrogen bonds (intermolecular forces) by modifying the surfaces (bonding surfaces W1j, W2j) by plasma treatment, and then hydrophilizing the modified surfaces with pure water.

[0014] Furthermore, as shown in Figure 3(B), the polymerized wafer T has a notch N in a part of the circumferential direction of its outer edge. For example, the notch N is formed by cutting out the outer edges of the upper wafer W1 and the lower wafer W2, respectively. The upper wafer W1 and the lower wafer W2 are joined together such that their respective notches N coincide.

[0015] As shown in Figures 3(A) and 3(B), the polymerized wafer T according to this embodiment is held in a holding jig HJ having a dicing frame F and a dicing tape P. The dicing frame F of the holding jig HJ is an annular metal member having an opening F1 on its inside that is larger in diameter than the polymerized wafer T. In plan view, the dicing frame F has a polygonal or annular shape. The thickness of the dicing frame F is set to be thicker than the thickness of the polymerized wafer T.

[0016] The dicing tape P of the holding jig HJ is made of a flexible resin material that is elastically deformable, and an adhesive layer is formed on one side (the upper surface). The peripheral edge of the dicing tape P is adhered to the back surface (the lower surface) of the dicing frame F, thereby closing the opening F1 of the dicing frame F. Then, within the opening F1 of the dicing frame F, the back surface of the polymerized wafer T is fixed to one side of the dicing tape P. Specifically, the non-bonded surface W2n of the lower wafer W2 is attached to the adhesive layer on the upper surface of the dicing tape P. The dicing tape P allows the side surface of the polymerized wafer T to be exposed by relatively displacing the polymerized wafer T and the dicing frame F in the thickness direction.

[0017] Returning to Figure 1, the peeling system 100 comprises an input / output station 1, a transfer station 2, and a processing station 3. Each of the input / output station 1, the transfer station 2, and the processing station 3 is configured as a separable unit and is installed in this order in the positive direction of the Y-axis.

[0018] The loading / unloading station 1 is responsible for loading the polymerized wafer T and unloading the upper wafer W1 and lower wafer W2 after delamination. The loading / unloading station 1 comprises a mounting section 4 and a first transport device 5.

[0019] The mounting section 4 has multiple cassette mounting tables (three in Figure 1) for setting cassettes such as FOUPs (Front-Opening Unified Pods) capable of accommodating multiple substrates. Examples of cassettes placed on each cassette mounting table include cassette Ct containing a polymerized wafer T, cassette C1 capable of accommodating the upper wafer W1 after peeling, and cassette C2 capable of accommodating the lower wafer W2 after peeling.

[0020] The first transport device 5 is positioned adjacent to the mounting section 4 on the positive Y-axis side and transports the stacked wafer T, the upper wafer W1, and the lower wafer W2. The first transport device 5 comprises, for example, a base and a plurality of transport arms, and performs horizontal movement, vertical lifting and lowering, and rotation around the vertical axis of the base for the substrate held by the transport arms. The first transport device 5 is an example of a substrate transport device.

[0021] The loading / unloading station 1 uses the first transport device 5 to transport the polymerized wafers T from each cassette Ct to the transfer station 2, and also transports the peeled upper wafer W1 and lower wafer W2 from the transfer station 2 to cassettes C1 and C2, respectively.

[0022] The transfer station 2 receives the polymerized wafer T before delamination, the upper wafer W1 after delamination, and the lower wafer W2 after delamination. As shown in Figure 2, the transfer station 2 includes, for example, a first transfer unit 25, a second transfer unit 26, a transfer unit with a reversing mechanism 27, and an aligner 28. The first transfer unit 25, the second transfer unit 26, the transfer unit with a reversing mechanism 27, and the aligner 28 are arranged in this order toward the vertically upward direction (positive Z-axis direction).

[0023] The polymerized wafer T transported from the loading / unloading station 1 is placed on the first transfer unit 25. The polymerized wafer T placed on the first transfer unit 25 is then transported to the processing station 3 by the second transport device 6 described later.

[0024] The peeled lower wafer W2 is placed on the second transfer section 26. The peeled lower wafer W2 placed on the second transfer section 26 is transported to the loading / unloading station 1 by the first transport device 5.

[0025] The transfer unit 27 with the reversal mechanism is on which the peeled upper wafer W1 is placed. The transfer unit 27 with the reversal mechanism is provided with a reversal mechanism (not shown) that reverses the upper and lower surfaces of the peeled upper wafer W1. After the upper and lower surfaces of the peeled upper wafer W1 placed on the transfer unit 27 with the reversal mechanism are reversed, it is transported to the loading / unloading station 1 by the first transport device 5.

[0026] The aligner 28 performs alignment processing on some or all of the polymerized wafer T, the upper wafer W1 after peeling, and the lower wafer W2 after peeling. For example, when aligning the polymerized wafer T, the aligner 28 holds and rotates the polymerized wafer T and calculates the eccentricity of the polymerized wafer T by detecting the position of the notch N (see Figure 3(B)) of the polymerized wafer T while it is rotating. Based on this eccentricity, the peeling system 100 adjusts the horizontal orientation of the polymerized wafer T by appropriately coordinating the aligner 28 with the first transport device 5 or the second transport device 6. The same procedure is followed when aligning the upper wafer W1 or the lower wafer W2.

[0027] The processing station 3 comprises a second transport device 6 and one or more peeling devices 7, and constitutes an area where the polymerized wafer T is actually peeled into an upper wafer W1 and a lower wafer W2. For example, the processing station 3 is configured such that the second transport device 6 and each peeling device 7 are aligned in the X-axis direction.

[0028] The second transport device 6 transports the polymerized wafer T, the peeled upper wafer W1, and the lower wafer W2 between the transfer station 2 and the peeling device 7. The second transport device 6 comprises, for example, a base and a plurality of transport arms, and performs horizontal movement, vertical lifting and lowering, and rotation around the vertical axis of the base for the held substrate. The second transport device 6 is an example of a substrate transport device.

[0029] Processing station 3 uses a second transport device 6 to transport the polymerized wafer T from the transfer station 2 to the peeling device 7. Processing station 3 also uses the second transport device 6 to separately transport the peeled lower wafer W2 from the peeling device 7 to the transfer station 2, and the peeled upper wafer W1 from the peeling device 7 to the transfer station 2.

[0030] The peeling device 7 separates the polymerized wafer T, which has been transported by the second transport device 6, into an upper wafer W1 and a lower wafer W2. The specific configuration and operation of this peeling device 7 will be described in detail later.

[0031] Furthermore, the peeling system 100 includes a control device 8 that controls the operation of the peeling system 100. The control device 8 is a computer that includes a processor 81, a memory 82, and an input / output interface (not shown). The processor 81 is a combination of one or more of the following: a CPU (Central Processing Unit), a GPU (Graphics Processing Unit), an ASIC (Application Specific Integrated Circuit), an FPGA (Field-Programmable Gate Array), a circuit consisting of multiple discrete semiconductors, etc. The memory 82 includes non-volatile memory and volatile memory. The memory 82 stores programs that control various processes, and the processor 81 controls the operation of the peeling system 100 by reading and executing the programs stored in the memory 82. In other words, in this disclosure, the control device 8 is an electronic circuit having a CPU, GPU, ASIC, FPGA, etc., and performs the various control operations described in this specification by executing instruction codes stored in the memory 82 or by circuit design for special applications.

[0032] Under the control of the control device 8, the peeling system 100 first removes the polymerized wafer T from the cassette Ct placed on the placement section 4 using the first transport device 5 of the loading / unloading station 1, and places the polymerized wafer T on the first transfer section 25 of the transfer station 2. Next, the peeling system 100 removes the polymerized wafer T placed on the first transfer section 25 using the second transport device 6 of the processing station 3 and loads it into the aligner 28. The control device 8 calculates the eccentricity of the polymerized wafer T using the aligner 28 and controls the receiving position of the polymerized wafer T (the horizontal orientation of the polymerized wafer T) by the second transport device 6 based on this eccentricity. Furthermore, the peeling system 100 loads the polymerized wafer T from the aligner 28 into the peeling device 7 using the second transport device 6.

[0033] The peeling device 7 then separates the polymerized wafer T into an upper wafer W1 and a lower wafer W2 under the control of the control device 8. The peeling device 7 may also be equipped with a dedicated control board, and the peeling of the polymerized wafer T may be controlled under the control of the control board based on commands from the control device 8.

[0034] After the peeling device 7 has finished peeling, the peeling system 100 operates the second transport device 6 to transport the lower wafer W2 from the peeling device 7 to the aligner 28, adjusts its horizontal orientation in the aligner 28, and then transports it to the second transfer unit 26. Furthermore, the peeling system 100 uses the first transport device 5 to remove the lower wafer W2 from the second transfer unit 26 and places it in a cassette C2 placed on the loading / unloading station 1. Once a certain number of lower wafers W2 have been placed in the cassette C2, it is removed from the loading / unloading station 1.

[0035] Furthermore, at a different timing from the transport of the lower wafer W2, the peeling system 100 operates the second transport device 6 to transport the upper wafer W1 from the peeling device 7 to the aligner 28. After adjusting the horizontal orientation in the aligner 28, it is transported to the transfer unit 27 with a reversing mechanism. The peeling system 100 then uses the reversing mechanism of the transfer unit 27 to reverse the upper and lower surfaces of the upper wafer W1. As a result, the upper wafer W1 is positioned with the bonding surface W1j facing upwards. Subsequently, the peeling system 100 uses the first transport device 5 to remove the upper wafer W1 from the transfer unit 27 with a reversing mechanism and places it in a cassette C1 placed on the loading / unloading station 1. Once a certain number of upper wafers W1 have been placed in the cassette C1, it is removed from the loading / unloading station 1.

[0036] <Configuration of the peeling apparatus 7> Next, the configuration of the peeling apparatus 7 according to the embodiment will be described with reference to Figure 4. The peeling apparatus 7 holds the polymerized wafer T by sandwiching it along the vertical direction (Z-axis direction) and peels the upper wafer W1 and lower wafer W2 of the polymerized wafer T. The peeling apparatus 7 has a processing container 30 into which the polymerized wafer T is fed, and the processing container 30 is equipped with an adsorption peeling section 40, a holding section 50, and a peeling induction section 60 inside.

[0037] The adsorption-detachment unit 40 adsorbs the non-bonding surface W1n of the upper wafer W1 of the polymerized wafer T, holds the upper wafer W1, and further performs a detachment operation to pull the upper wafer W1 vertically upward. The adsorption-detachment unit 40 includes a base member 41, a pair (two) lifting mechanisms 42 provided on the base member 41, a support member 43 supported by the pair of lifting mechanisms 42, and an upper adsorption group 44 supported by the support member 43 that adsorbs the upper wafer W1. Furthermore, the adsorption-detachment unit 40 includes a transfer and holding unit 47 that operates to transfer the detached upper wafer W1 to the second transfer device 6, and a pressing unit 48 that presses down the dicing frame F of the holding jig HJ.

[0038] The base member 41 is a plate member having an appropriate thickness and is fixed, for example, directly or indirectly to the ceiling wall (or side wall) of the processing container 30. The base member 41 has sufficient rigidity and is able to maintain an orientation extending horizontally (in the X-Y axis direction) within the processing container 30.

[0039] The pair of lifting mechanisms 42 are fixed to the upper part of the base member 41 so that they are positioned at the same height relative to each other. These pair of lifting mechanisms 42 support one end and the other end of a support member 43, which is positioned vertically below the base member 41, and are actuators that raise and lower the support member 43. Each lifting mechanism 42 includes a main body 421, a shaft 422 that protrudes vertically downward from the main body 421, and a load cell 423 that detects the load applied to the shaft 422.

[0040] The main body 421 is attached to the base member 41, and is equipped with a drive source and transmission mechanism (both not shown) for raising and lowering the shaft 422 vertically. The main body 421 is connected to the control device 8, and raises and lowers the shaft 422 according to the control of the control device 8. The peeling device 7 is capable of raising and lowering the shafts 422 of the pair of lifting mechanisms 42 independently of each other.

[0041] The shaft 422 extends linearly along the vertical direction and supports a support member 43 connected to its lower end. The load cell 423 detects the load applied to the shaft 422 and transmits the detection information to the control device 8. During the delamination of the polymerized wafer T, the control device 8 controls the height position of the support member 43 based on the detection information from the load cell 423.

[0042] The support member 43 is a thin plate-shaped member that supports the upper adsorption group 44 that adsorbs the upper wafer W1. The support member 43 is made of a metal material or the like and has both the rigidity to support the upper adsorption group 44 and the flexibility to be elastically deformable in the vertical direction. The support member 43 is suspended so as to bridge the gap between the pair of lifting mechanisms 42, and extends substantially parallel to the adsorption surface 51s of the lower holding part 50. As a result, the lower surface of the support member 43 faces the polymerized wafer T held by the holding part 50.

[0043] As shown in Figure 5, the support member 43 has a disc 431 and a pair of protruding plates 432 provided on both sides of the disc 431 in the Y-axis direction. The disc 431 and the pair of protruding plates 432 are fixed to each other by appropriate connecting means such as screws, welding, or adhesive. The disc 431 and the pair of protruding plates 432 may be integrally molded.

[0044] The disk 431 is formed in a perfect circular shape having a diameter approximately the same as that of the upper wafer W1. The center of the disk 431 substantially coincides with the center of the adsorption surface 51s of the holding part 50 described later. The disk 431 overlaps the polymerized wafer T held by the holding part 50 in a plan view. This disk 431 constitutes a part that directly supports the upper adsorption group 44.

[0045] In a region including the center of the disk 431, a through hole 433 penetrating in the thickness direction is provided. The through hole 433 enables the transfer holding part 47 (see FIG. 4) to pass through, and realizes the holding of the upper wafer W1 by the transfer holding part 47. Note that the disk 431 may have a plurality of small holes (not shown) penetrating in the thickness direction to facilitate elastic deformation of the disk 431. Further, the disk 431 may be configured to promote elastic deformation in the Y-axis direction while suppressing elastic deformation in the X-axis direction by having a plurality of ribs or grooves extending along the X-axis direction in the Y-axis direction.

[0046] The pair of protruding plates 432 protrude from the outer peripheral part of the disk 431 in the Y-axis direction in opposite directions. The shaft 422 of the lifting mechanism 42 is connected to the protruding end of each protruding plate 432, respectively. Each protruding plate 432 moves up and down in the vertical direction (Z-axis direction) by the pair of lifting mechanisms 42. The horizontal posture of the disk 431 changes according to the height position of each protruding plate 432 (the shaft 422 of the lifting mechanism 42). In particular, the support member 43 can elastically deform so as to curve with respect to the Y-axis direction when each lifting mechanism 42 independently rises, and can rise while changing the distribution of the height positions of the upper adsorption group 44 (see also FIG. 6(C)).

[0047] Further, the adsorption and separation part 40 includes a plurality of sensors 49 on the upper surface of the disk 431 of the support member 43. Examples of the sensor 49 include a strain sensor 49a that detects the strain around the attachment location of the support member 43 and transmits the detection information to the control device 8. As described above, when the upper wafer W1 is peeled off, the support member 43 rises upward in the vertical direction while bending. Therefore, in the peeling operation, each strain sensor 49a detects the degree of elastic deformation (strain) of the bending disk 431. The support member 43 first rises by the lifting mechanism 42 on the negative Y-axis side, so that the peeling direction of the adsorbed upper wafer W1 is the positive Y-axis direction (the direction from left to right) in FIG. 5.

[0048] Each strain sensor 49a forms, for example, a row arranged at equal intervals in the X-axis direction, and a plurality of such rows are provided so as to be arranged in the Y-axis direction. Each strain sensor 49a arranged in this way can make the control device 8 recognize the in-plane distribution of the strain of the entire support member 43 (disk 431) by detecting the strain of the peripheral part. The in-plane distribution of the strain of the support member 43 is correlated with the deformation of the upper wafer W1. Therefore, the control device 8 can estimate the degree of elastic deformation of the upper wafer W1, in other words, the limit of the elastic deformation of the upper wafer W1 (cracking of the upper wafer W1) by monitoring the strain of the support member 43.

[0049] The type of the strain sensor 49a is not particularly limited, and a well-known strain gauge can be applied. Examples of the strain gauge include a foil-shaped or plate-shaped strain gauge having a resistor or the like inside, a wire strain gauge, a semiconductor strain gauge, and the like. Alternatively, the strain sensor 49a may be an optical fiber sensor applying a fiber Bragg grating (FBG).

[0050] Further, the sensor 49 installed on the support member 43 is not limited to the strain sensor 49a, and may be a force sensor or the like that can detect the force applied to the support member 43. By detecting the in-plane distribution of the force applied to the entire support member 43 (disk 431) by this force sensor, the control device 8 can estimate the stress applied to the upper wafer W1.

[0051] Furthermore, the arrangement and number of each sensor 49 (strain sensor 49a) on the support member 43 can also be designed arbitrarily. For example, each strain sensor 49a may be provided only on the negative Y-axis side (to the left of the center of the disc 431 in Figure 5) where cracking of the upper wafer W1 is likely to occur. Alternatively, for example, the delamination device 7 may be configured to have one or more sensors 49 at positions on the support member 43 facing positions in the Y-axis direction where stress is particularly likely to be applied to the upper wafer W1, based on experiments and simulations regarding the delamination of the polymerized wafer T.

[0052] As shown in Figures 4 and 5, the upper adsorption group 44 supported by the support member 43 has a plurality of adsorption bodies 45. Each adsorption body 45 includes a cylindrical portion 451 extending in the vertical direction, a contact portion 452 provided at the lower end of the cylindrical portion 451, and a suction path 453 connected to the cylindrical portion 451. A suction device 454, such as a vacuum pump, is provided in each of the suction paths 453 of each adsorption body 45. The suction paths 453 may be connected to a single suction device 454 by merging externally.

[0053] The cylindrical portion 451 has a suction space inside that extends along the axial direction. The cylindrical portion 451 is firmly connected to the disc 431 of the support member 43 and protrudes from the lower surface of the support member 43. When the support member 43 is in a horizontal position, the contact portions 452 of each cylindrical portion 451 are positioned at the same height. In addition, a port 455 connected to the suction path 453 is provided on the upper surface side of the cylindrical portion 451 of the support member 43.

[0054] The contact portion 452 is formed, for example, in the shape of a frustoconical or cylindrical shape, and constitutes a portion that directly contacts the non-bonding surface W1n of the upper wafer W1. Preferably, this contact portion 452 is formed of a rubber material or other resin material. It is preferable that the contact portion 452 be formed to have high rigidity (difficult to elastically deform). This is because if the contact portion 452 undergoes large elastic deformation when the adsorption / detachment portion 40 rises, the adsorbed portion of the upper wafer W1 will also deform significantly, potentially damaging the upper wafer W1 or the lower wafer W2.

[0055] The suction device 454 is connected to the control device 8 and performs suction operations based on the control of the control device 8. Each adsorbent 45 adsorbs the upper wafer W1 by applying suction pressure to the contact portion 452 via the suction path 453 and cylindrical portion 451 from the suction device 454, while the contact portion 452 of each adsorbent 45 is in contact with the non-bonding surface W1n of the upper wafer W1.

[0056] In the example shown in Figure 5, five suction bodies 45 are installed on the support member 43. One pair of suction bodies 45 are arranged in the X-axis direction with a protruding plate 432 in between on the negative Y-axis side of the support member 43. Another pair of suction bodies 45 are arranged in the X-axis direction with a through hole 433 in between on the through hole 433 side of the support member 43 (negative Y-axis side from the center of the support member 43). The remaining suction body 45 is provided on the positive Y-axis side of the support member 43 (adjacent to the protruding plate 432 on the negative Y-axis side). Of course, the number and arrangement of each suction body 45 can be designed arbitrarily.

[0057] As shown in Figure 4, each adsorbent 45 may also be equipped with a load cell 456 that detects the load applied to the adsorbent 45 itself from the upper wafer W1 during the peeling operation. The load cell 456 is connected to the control device 8 in a communication manner and transmits information about the load applied to each adsorbent 45. By utilizing both the detection information from each strain sensor 49a and the detection information from each load cell 456, the control device 8 can estimate, for example, the in-plane strain distribution of the upper wafer W1 with greater accuracy.

[0058] Furthermore, the upper adsorption group 44 has multiple distance sensors 46 fixed to the base member 41. Each distance sensor 46 measures the distance to the opposing polymerized wafer T (upper wafer W1) and transmits it to the control device 8. As a result, the control device 8 can calculate the height (vertical position) of the upper wafer W1 during the peeling operation and recognize the progress of the peeling of the upper wafer W1.

[0059] The transfer and holding section 47 of the adsorption and peeling section 40 is installed on the base member 41 and holds the upper wafer W1 by adsorbing the non-bonding surface W1n of the upper wafer W1 after peeling, which is held by the upper adsorption group 44. The transfer and holding section 47 comprises a base 471, a plurality of adsorption pads 472, a plurality of contact pads 473, and a base lifting mechanism 474 (Figure 4 shows one adsorption pad 472 and one contact pad 473 as representative examples).

[0060] The base portion 471 extends vertically and is formed in a cylindrical shape that passes through a through hole (not shown) in the base member 41. The base portion 471 supports a plurality of suction pads 472 and a plurality of contact pads 473 at its lower end surface. The base portion 471 is connected to a base lifting mechanism 474 and moves up and down along the vertical direction by the base lifting mechanism 474. When the base portion 471 is lowered, it passes through a through hole 433 in the support member 43.

[0061] Multiple suction pads 472 are made of rubber or the like, and for example, have a bellows-like shape so that they can follow the vertical and horizontal displacement of the upper wafer W1. Each suction pad 472 is connected to a suction device 476, such as a vacuum pump, via a suction path 475. The suction device 476 is connected to a control device 8 and performs suction operations based on the control of the control device 8. The transfer and holding unit 47 attracts the non-bonding surface W1n of the upper wafer W1 by generating suction pressure (negative pressure) on the multiple suction pads 472 via the suction path 475 and the base 471.

[0062] On the other hand, the multiple contact pads 473 are formed from a resin material into a hemispherical shape or the like, and contact the non-bonding surface W1n of the upper wafer W1 that is adsorbed by each adsorption pad 472. Each contact pad 473 can have its protrusion amount from the base 471 adjusted by an adjustment part (not shown), which assists in the detachment of the upper wafer W1 from the transfer and holding part 47.

[0063] The base lifting mechanism 474 moves the base 471 up and down based on the control of the control device 8, thereby displacing the multiple suction pads 472 and the multiple contact pads 473 in the vertical direction. For example, the base lifting mechanism 474 moves the multiple suction pads 472 and the multiple contact pads 473 up and down between a standby position, a transfer position where the upper wafer W1 held by the upper suction group 44 is picked up after peeling, and a transfer position where the upper wafer W1 is handed over to the second transport device 6.

[0064] The push-down sections 48 of the suction release section 40 are provided on the outer circumference of the base member 41 (radially outward from the pair of lifting mechanisms 42) and push the dicing frame F vertically downward at appropriate timings. For example, four push-down sections 48 are provided circumferentially at positions corresponding to the dicing frame F transported to the holding section 50. Of course, the number of push-down sections 48 is not particularly limited.

[0065] Each pressing section 48 comprises a pressing pad 481, a shaft member 482, and a moving mechanism 483. The pressing pad 481 is made of an elastic material such as rubber. The shaft member 482 is supported by the moving mechanism 483 so as to be movable in the vertical direction, and the pressing pad 481 is attached to its lower end. The moving mechanism 483 is fixed to the base member 41 and connected to the control device 8, and lowers and raises the shaft member 482 based on the control of the control device 8.

[0066] On the other hand, the holding section 50 of the peeling device 7 is provided from the middle to the bottom of the processing container 30 in the vertical direction, and holds the holding jig HJ that holds the polymerized wafer T by suction. The holding section 50 includes a disc-shaped lower chuck 51, a support column 52 that supports the lower chuck 51, a rotation and lifting mechanism 53 that rotates and raises the lower chuck 51, and a frame holding section 54 that holds the dicing frame F on the radially outer side of the lower chuck 51.

[0067] The lower chuck 51 fixes the polymerized wafer T during peeling by adsorbing the dicing tape P of the holding jig HJ that holds the polymerized wafer T. The lower chuck 51 has, for example, a plurality of adsorption holes on its upper surface (mounting surface) and an adsorption passage inside that communicates with each adsorption hole, and is connected to a suction mechanism 511 provided outside the processing container 30. The suction mechanism 511 includes a suction path 511a connected to the adsorption passage of the lower chuck 51, and a suction device 511b that applies suction force to the dicing tape P via the suction path 511a, the adsorption passage, and each adsorption hole. The suction mechanism 511 can firmly hold the lower wafer W2 (the lower side of the polymerized wafer T) during peeling by performing suction with the suction device 511b based on the control of the control device 8.

[0068] When placing the polymerized wafer T on the holding section 50, the position of the polymerized wafer T (lower wafer W2) is adjusted so that the center of the polymerized wafer T coincides with the center of the lower chuck 51. The lower chuck 51 also has a plurality of lift pins (not shown) inside, and the polymerized wafer T is placed on the lower chuck 51 by raising and lowering each lift pin.

[0069] The rotary lifting mechanism 53 allows the lower chuck 51 to rotate and displace in a vertical direction perpendicular to the insertion direction of the blade 61. For example, the rotary lifting mechanism 53 has internally a drive source for rotating the support column 52, a drive source for raising and lowering the support column 52, and a transmission mechanism (not shown) for transmitting the driving force of each drive source. The rotary lifting mechanism 53 is connected to a control device 8 and, based on the control of the control device 8, rotates the lower chuck 51 around a vertical axis and raises and lowers the lower chuck 51.

[0070] The frame holding section 54 holds the dicing frame F in the pressed-down state by adsorption, after it has been pressed down by the pressing-down section 48. The frame holding section 54 comprises a plurality of adsorption pads 541 and a support 542 that supports the adsorption pads 541. The adsorption pads 541 are made of an elastic material such as rubber and, for example, four are provided at equal intervals on the circumferential direction of corresponding positions on the dicing frame F. As an example, each adsorption pad 541 may be provided at a position that is vertically opposite to the plurality of pressing-down sections 48 described above. Of course, the number of adsorption pads 541 is not particularly limited.

[0071] Each suction pad 541 has an air intake port (not shown) on its inside. Each suction pad 541 is connected to a suction device 545, such as a vacuum pump, via a support 542, a suction tube 543 connected to the support 542, and a suction path 544 connected to the suction tube 543. The upper end (air intake port) of the suction pad 541 is positioned vertically below the suction surface 51s of the lower chuck 51. The suction device 545 applies suction pressure to each suction pad 541 based on the control of the control device 8.

[0072] The support body 542 is supported by the lower base portion 546 and protrudes vertically at appropriate positions (circumferentially on the position corresponding to the dicing frame F) to hold each suction pad 541. The lower base portion 546 is formed in a disc shape and fixes the support body 542 and the support column 52. In addition, a rotating shaft (not shown) of the rotational lifting mechanism 53 is connected to the lower surface of the lower base portion 546.

[0073] The frame holding section 54 can hold the dicing frame F by adsorption using the negative pressure generated by the suction of the suction device 545. Furthermore, the holding section 50 can displace (rotate and move up and down) the polymerized wafer T held in the lower chuck 51 and the dicing frame F held in the frame holding section 54 together using the rotation and lifting mechanism 53.

[0074] On the other hand, the peeling induction section 60 of the peeling device 7 is positioned to the side of the adsorption peeling section 40 and the holding section 50, and forms a cut portion CP (see Figure 6(B)) radially inward from the outer edge of the polymerized wafer T when peeling the upper wafer W1 and the lower wafer W2 of the polymerized wafer T. This peeling induction section 60 includes a blade 61, a blade sliding mechanism 62, and a blade lifting mechanism 63.

[0075] The blade 61 is a peeling member having an acute-angled cutting edge in the positive Y-axis direction. In plan view, the blade 61 is formed in a rectangular shape that is shorter along the Y-axis direction and longer along the X-axis direction (see also Figure 5). The length of the blade 61 in the Y-axis direction may be set to an appropriate dimension within the range of, for example, 50 mm to 150 mm. In this embodiment, the longitudinal length of the blade 61 is 100 mm.

[0076] The blade slide mechanism 62 includes a movable body 621 that supports the blade 61 and a fixed body 622 that slidably supports the movable body 621. The movable body 621 supports the blade 61 so as to protrude in the positive Y-axis direction and reciprocates in the Y-axis direction relative to the fixed body 622 based on the drive of a drive source (not shown). In other words, the blade 61 moves forward in the positive Y-axis direction and backward in the negative Y-axis direction by the blade slide mechanism 62.

[0077] The blade lifting mechanism 63 is fixed, for example, to the end of the base member 41 on the negative Y-axis side, and moves the blade sliding mechanism 62 in the vertical direction. This allows the peeling induction section 60 to adjust the height position of the blade 61.

[0078] The delamination induction section 60, for example, adjusts the height position of the blade 61 using the blade lifting mechanism 63, and then advances the blade 61 in the negative Y-axis direction using the blade sliding mechanism 62. As this advancement occurs, the cutting edge of the blade 61 enters the adhesive G between the upper wafer W1 and the lower wafer W2 from the side of the polymerized wafer T, thereby forming a cut portion CP (see Figure 6(B)) between the upper wafer W1 and the lower wafer W2. The cut portion CP is the area where the adhesive G joining the vicinity of the outer edge of the polymerized wafer T is broken, and the bonding surface W1j of the upper wafer W1 separates from the bonding surface W2j of the lower wafer W2.

[0079] <Procedure for peeling the polymerized wafer T> The peeling apparatus 7 configured as described above peels the polymerized wafer T according to the procedure shown in Figures 6(A) to 6(D) based on the control of the control device 8.

[0080] Specifically, as shown in Figure 6(A), after the polymerized wafer T, which is integrated with the dicing frame F, is placed on the holding section 50, the peeling device 7 applies suction pressure to the lower chuck 51 to fix the polymerized wafer T to the lower chuck 51 via the dicing tape P. The peeling device 7 also lowers the push-down section 48 vertically downward, and uses this push-down section 48 to push down the dicing frame F. At this time, the portion of the dicing tape P located outside the lower chuck 51 deforms diagonally downward to allow displacement of the dicing frame F. Furthermore, the peeling device 7 operates the frame holding section 54 to apply suction pressure to the suction pad 541, thereby holding the pushed-down dicing frame F in the frame holding section 54. As a result, the side surface of the polymerized wafer T faces the blade 61 of the peeling induction section 60.

[0081] Next, as shown in Figure 6(B), the peeling apparatus 7 forms a cut portion CP by inserting the blade 61 of the peeling induction portion 60 between the upper wafer W1 and the lower wafer W2 of the polymerized wafer T.

[0082] Subsequently, as shown in Figure 6(C), the peeling device 7 lowers the upper adsorption group 44 using a pair of lifting mechanisms 42, and the upper wafer W1 is adsorbed by each adsorbent 45. Furthermore, the peeling device 7 raises the lifting mechanism 42 on the negative Y-axis side, causing the support member 43 on the negative Y-axis side to curve. The adsorbent 45 on the negative Y-axis side rises in a manner that curls up the negative Y-axis side of the upper wafer W1, initiating a peeling operation that separates the upper wafer W1 from the lower wafer W2. As the lifting mechanism 42 on the negative Y-axis side rises slowly, the degree of curvature of the support member 43 gradually increases, and consequently, the peeling of the upper wafer W1 and the lower wafer W2 progresses from the negative Y-axis side to the positive Y-axis side.

[0083] When the separation of the upper wafer W1 and the lower wafer W2 progresses to a certain extent (for example, when the separation extends beyond the center of the polymerized wafer T), as shown in Figure 6(D), the separation device 7 also raises the lifting mechanism 42 on the positive Y-axis side to separate the upper wafer W1 from the lower wafer W2. In the latter half of the separation operation, the bonding force between the upper wafer W1 and the lower wafer W2 also weakens, allowing the separation to proceed smoothly.

[0084] <Regarding distortion of the upper wafer W1> As described above, the peeling device 7 can separate the upper wafer W1 and the lower wafer W2 by coordinating the adsorption peeling section 40, the holding section 50, and the peeling induction section 60. However, when peeling the polymerized wafer T, as described above, the upper wafer W1 is pulled away from the lower wafer W2 while bending the upper wafer W1 from the negative Y-axis side of the upper wafer W1, which may cause damage such as cracking to the upper wafer W1. In particular, if the bonding force between the upper wafer W1 and the lower wafer W2 of the polymerized wafer T is strong, even if the negative Y-axis side of the support member 43 and each adsorbent 45 rises, the upper wafer W1 will be difficult to peel away from the lower wafer W2, resulting in significant distortion of the upper wafer W1. The upper wafer W1 may be damaged by the load associated with this distortion.

[0085] As shown in Figure 7, there is a sufficient correlation between the curvature of the upper wafer W1 due to elastic deformation during the upward movement of the upper wafer W1 by the adsorption / detachment unit 40 and the curvature of the disc 431 of the support member 43 due to elastic deformation. Therefore, the detachment device 7 can significantly suppress damage to the upper wafer W1 by recognizing the state of distortion of the disc 431 of the support member 43 and adjusting the detachment operation (continuing the detachment operation, changing the detachment operation).

[0086] Therefore, the control device 8 is configured to acquire detection information from a plurality of strain sensors 49a installed on the support member 43 and monitor the strain state of the disk 431. Furthermore, the control device 8 according to this embodiment also functions as an information processing device that generates strain distribution information 90 showing the in-plane strain distribution of the disk 431, as shown in the lower diagram of Figure 7, by combining the detection information from each strain sensor 49a. Alternatively, the control device 8 may use the detection information from each strain sensor 49a to estimate (calculate) information showing the in-plane strain distribution of the upper wafer W1. When generating the in-plane strain distribution of the upper wafer W1, the control device 8 may also use the detection information from the load cells 456 of each adsorbent 45, or the detection information from the distance sensor 46.

[0087] For example, as shown in the lower diagram of Figure 7, the strain distribution information 90 is shown as a gradient, with areas of small strain in white and areas of large strain in black. In this way, when the support member 43 rises along the negative Y-axis side and a certain amount of time has elapsed, a large strained portion 91 occurs in the disk 431 and the upper wafer W1 at an intermediate position on the negative Y-axis side. The strained portion 91 extends in a substantially linear manner along the X-axis direction of the disk 431. In the delamination of the polymerized wafer T, if the amount of strain in this strained portion 91 is large, the upper wafer W1 is more likely to be damaged.

[0088] The control device 8 continues detection by each strain sensor 49a during the peeling of the polymerized wafer T and monitors the amount of strain in the strained portion 91 in the strain distribution information 90. The control device 8 is configured to control the peeling operation on the polymerized wafer T so that the amount of strain in the strained portion 91 is minimized as much as possible.

[0089] The control device 8 may also be equipped with a user interface 85 such as a monitor, and the strain distribution information 90 may be displayed on the user interface 85. This allows the user of the peeling system 100 to clearly recognize the load applied to the disc 431 or the upper wafer W1 via the user interface 85. For example, when manually adjusting the parameters of the peeling operation, the user can refer to this strain distribution information 90 to set appropriate parameters.

[0090] <Peeling Method> The peeling system 100 according to the embodiment is basically configured as described above, and the operation of the peeling device 7 (peeling method) will be explained below with reference to the flowchart in Figure 8. The control device 8 controls each component of the peeling device 7 in the peeling method and executes steps S101 to S109 shown in Figure 8.

[0091] In the peeling method, the control device 8 determines the start of peeling of the polymerized wafer T (step S101). At this time, the control device 8 controls the operation of the push-down unit 48, the lower chuck 51, and the frame holding unit 54 to fix the polymerized wafer T to the lower chuck 51 and lower the dicing frame F (see also Figure 6(A)). This allows the peeling inducer unit 60 to enter the adhesive G of the polymerized wafer T. The control device 8 monitors the operation of each component and determines the start of peeling when this state is reached (step S101: YES).

[0092] Next, the control device 8 forms a cut portion CP with the peeling induction portion 60 (see also Figure 6(B)), then lowers the adsorption peeling portion 40 to hold the upper wafer W1 with each adsorbent 45, and then starts raising the adsorption peeling portion 40 (step S102). As the lifting mechanism 42 on the negative Y-axis side rises, the support member 43 also starts rising from the negative Y-axis side, and consequently, the upper wafer W1 on which the cut portion CP has been formed is also promoted to peel from the negative Y-axis side (see also Figure 6(C)).

[0093] Then, when peeling the polymerized wafer T, the peeling device 7 detects the strain of the disc 431 of the support member 43 using each strain sensor 49a and transmits this detection information to the control device 8 (step S103). When the control device 8 obtains the detection information from each strain sensor 49a, it generates, for example, strain distribution information 90 (see also Figure 7) and displays the strain distribution information 90 via the user interface 85. Alternatively, the control device 8 may generate the strain state (in-plane strain distribution) of the upper wafer W1 based on the detection information.

[0094] The control device 8 monitors the amount of strain in the disk 431 and determines whether the amount of strain is within an acceptable range (step S104). This acceptable range should be set appropriately based on the amount of strain that does not cause damage to the upper wafer W1, obtained through experiments or simulations. If the amount of strain is within the acceptable range, it can be said that the upper wafer W1 will not be damaged. Therefore, if the amount of strain is within the acceptable range (step S104: YES), the process proceeds to step S105. On the other hand, if the amount of strain is outside the acceptable range, it can be said that there is a possibility that the upper wafer W1 will be damaged. Therefore, if the amount of strain is not within the acceptable range (step S104: NO), the process proceeds to step S106.

[0095] In step S105, the control device 8 controls the adsorption / detachment unit 40 to continue raising it. That is, as the lifting mechanism 42 on the negative Y-axis side rises, the polymerized wafer T undergoes peeling of the upper wafer W1 from the negative Y-axis side. Then the control device 8 proceeds to step S109.

[0096] In step S106, the control device 8 performs a modification process to change (correct) the peeling operation of the upper wafer W1. For example, the modification process may involve temporarily stopping the upward movement of the suction peeling unit 40 (lifting mechanism 42 on the negative Y-axis side). As a result, the upper wafer W1 will no longer rise while remaining in a curved state, and will gradually peel away from the lower wafer W2 in accordance with the elastic restoring force of the upper wafer W1. In other words, the strain of the upper wafer W1 gradually decreases as the peeling of the upper wafer W1 and the lower wafer W2 progresses.

[0097] The modification process is not limited to temporarily suspending the suction / detachment unit 40; various operations may be performed. For example, the modification process may involve slightly lowering the suction / detachment unit 40 and waiting in that lowered position to reduce the strain on the upper wafer W1 while proceeding with the detachment. Alternatively, the modification process may involve reducing the upward speed of the suction / detachment unit 40 to allow the detachment of the upper wafer W1 to proceed. The detachment device 7 may also release the suction of the upper wafer W1 and return the upper wafer W1 to a flat state. Alternatively, the modification process may involve operating the detachment induction unit 60 to insert the blade 61 into the adhesive G.

[0098] Even when the modification process is being executed, the control device 8 acquires detection information from each strain sensor 49a and determines whether the amount of strain in the disk 431 or the upper wafer W1 has decreased to a predetermined level or lower (step S107). If the amount of strain does not fall below the predetermined level (step S107: NO), the process continues to step S106. On the other hand, if the amount of strain does fall below the predetermined level (step S107: YES), the process proceeds to step S108.

[0099] In step S108, the control device 8 controls the adsorption / detachment unit 40 to restart its upward movement. As a result, the separation between the upper wafer W1 and the lower wafer W2 proceeds again.

[0100] Then, in step S109, the control device 8 determines whether or not the peeling of the polymerized wafer T is complete. The completion of peeling of the polymerized wafer T can be determined, for example, by monitoring the height of the upper wafer W1 with the distance sensor 46. Alternatively, the control device 8 may determine the completion of peeling by raising the lifting mechanism 42 on the positive Y-axis side of the adsorption peeling unit 40. If the peeling of the polymerized wafer T is not complete (step S109: NO), the process returns to step S103 and the same processing flow is repeated thereafter. On the other hand, if the peeling of the polymerized wafer T is complete (step S109: YES), the peeling process of the polymerized wafer T is terminated. Note that before step S109, the control device 8 raises the lifting mechanism 42 on the positive Y-axis side based on the upward position of the distance sensor 46. The control device 8 may also use the detection information of the strain sensor 49a to determine the timing of this lifting mechanism 42 on the positive Y-axis side. For example, if the amount of strain is large, the lifting mechanism 42 on the positive Y-axis side may be temporarily delayed.

[0101] After the peeling process is completed, the control device 8 controls the second transport device 6 to individually transport the separated upper wafer W1 and lower wafer W2 from the peeling device 7 and transport them to the transfer station 2. Then, as described above, the peeling system 100 transports the upper wafer W1 to cassette C1 and the lower wafer W2 to cassette C2 using the first transport device 5.

[0102] As described above, the peeling apparatus 7 is equipped with a sensor 49 (strain sensor 49a) capable of detecting the strain of the support member 43 or the force applied to the support member 43. Since the detection information (strain, force) from the sensor 49 detected during peeling is correlated with the strain state of the upper wafer W1, the peeling apparatus 7 can accurately estimate the strain of the upper wafer W1 based on the detection information from the sensor 49 during peeling and take appropriate action. As a result, the peeling apparatus 7 can suppress damage to the upper wafer W1 and peel the polymerized wafer T well.

[0103] Furthermore, the peeling device 7 can smoothly take measures such as reducing the distortion of the upper wafer W1 during peeling by performing a modification process that changes the operation of the lifting mechanism 42 based on the detection information of the sensor 49. In this case, the control device 8 can appropriately determine whether or not to perform the modification process and the timing of its execution by monitoring the amount of distortion and the allowable range.

[0104] Furthermore, the peeling device 7 is equipped with multiple sensors 49 along the plane direction of the disc 431 of the support member 43, which allows for accurate estimation of the in-plane strain distribution of the disc 431 or the upper wafer W1. The peeling system 100 displays strain distribution information 90 via a user interface 85 using a control device 8, which is an information processing device, allowing the user to easily recognize the state of strain that occurs during peeling.

[0105] Furthermore, by equipping each adsorbent 45 with a load cell 456, the control device 8 can also recognize the load applied to the adsorbent 45 from the upper wafer W1. By using the strain of the support member 43 and the load applied to the adsorbent 45, the control device 8 can recognize the strain of the upper wafer W1 with even greater accuracy. As a result, the delamination system 100 can more reliably avoid damage to the upper wafer W1 and perform delamination of the upper wafer W1 and the lower wafer W2.

[0106] It should be noted that the peeling device 7 and peeling method according to this disclosure are not limited to the above-described embodiments and can be modified in various ways. For example, the peeling device 7 may be configured to display the state of strain of the support member 43 (or upper wafer W1) detected by the sensor 49 only on the user interface 85, without using it to control the peeling operation. This allows the user to appropriately adjust the operation parameters of the adsorption peeling unit 40 in the next peeling operation of the polymerization substrate T if the upper wafer W1 is damaged.

[0107] The peeling apparatus 7 and peeling method according to the embodiments disclosed herein are illustrative and not restrictive in all respects. The embodiments can be modified and improved in various ways without departing from the scope and spirit of the appended claims. The matters described in the above embodiments can be otherwise configured and combined in a non-consistent manner.

[0108] This application claims priority to Japanese Patent Application No. 2025-13250, which was filed with the Japan Patent Office on January 29, 2025, and the entire contents of that application are incorporated herein by reference.

[0109] 7 Peeling device 42 Lifting mechanism (actuator) 43 Support member 45 Adsorbent 49 Sensor 50 Holding part W1 Upper wafer (first substrate) W2 Lower wafer (second substrate)

Claims

1. A peeling device comprising: a holding portion for holding the second substrate of a polymer substrate formed by joining a first substrate and a second substrate; a plurality of adsorbents for adsorbing the first substrate; a support member for supporting the plurality of adsorbents; and an actuator for moving the support member to peel the first substrate, which has been adsorbed by the plurality of adsorbents, from the second substrate, wherein the support member is provided with a sensor capable of detecting the strain of the support member or the force applied to the support member.

2. The peeling apparatus according to claim 1, comprising a control device that controls the operation of the actuator to peel the first substrate from the second substrate, wherein the control device performs a modification process to change the operation of the actuator based on the detection information of the sensor when the polymer substrate is peeled off.

3. The peeling apparatus according to claim 2, wherein the control device determines whether the amount of strain obtained by the detection information of the sensor is within an acceptable range, and continues the operation of the actuator if the amount of strain is within the acceptable range, and performs the modification process if the amount of strain falls outside the acceptable range.

4. The peeling apparatus according to claim 2, wherein the control device controls the operation of the actuator to reduce the distortion of the first substrate during the modification process.

5. The peeling apparatus according to any one of claims 1 to 4, wherein the support member has a disc facing the first substrate, and a plurality of sensors are provided along the planar direction of the disc.

6. The peeling apparatus according to claim 5, comprising an information processing device for acquiring and processing detection information from a plurality of the sensors, wherein the information processing device generates information on the in-plane distribution of strain in the support member or the first substrate based on the detection information from the plurality of sensors, and displays the information on the in-plane distribution of strain via a user interface.

7. The peeling apparatus according to any one of claims 1 to 4, wherein the actuators are provided at one end and the other end of the support member, and when peeling the polymer substrate, the support member is bent by displacing one end of the support member, thereby peeling the substrate from one end of the first substrate and the second substrate.

8. The peeling apparatus according to any one of claims 1 to 4, wherein the plurality of adsorbents are equipped with load cells for detecting the load applied to the plurality of adsorbents when the polymerization substrate is peeled off.

9. A peeling method for a peeling apparatus comprising: a holding portion for holding the second substrate of a polymer substrate formed by joining a first substrate and a second substrate; a plurality of adsorbents for adsorbing the first substrate; a support member for supporting the plurality of adsorbents; and an actuator for moving the support member to peel the first substrate, which has been adsorbed by the plurality of adsorbents, from the second substrate, wherein the actuator is operated to peel the first substrate, which has been adsorbed by the plurality of adsorbents, from the second substrate, while a sensor provided on the support member detects the strain of the support member or the force acting on the support member.

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