Light detection device and electronic apparatus

Abstract

Provided is a light detection device comprising, on a semiconductor substrate: a pixel array unit including a plurality of pixels arranged in the row direction and the column direction; and a lattice-shaped light-shielding grid pattern that is provided on the pixel array unit, partitions the pixels, and is constituted by a plurality of first light-shielding members provided between the pixels adjacent to each other. The pixel array unit includes a plurality of unit cells comprising a prescribed number of the pixels adjacent to each other. In at least one of the unit cells, the first light-shielding members constituting the light-shielding grid pattern are not provided between the pixels adjacent to each other.

Description

Optical Detection Device and Electronic Device

[0004] , ,

[0005]

[0001] The present disclosure relates to an optical detection device and an electronic device.

[0002] The optical detection device has a plurality of pixels two-dimensionally arranged in a matrix along a row direction and a column direction on a semiconductor substrate. Each pixel has a photoelectric conversion part provided in the semiconductor substrate, and a color filter and an on-chip lens provided above the photoelectric conversion part. And each pixel generates charges by the light incident on the photoelectric conversion part through the on-chip lens and the color filter, so the optical detection device can detect light or obtain an image by acquiring the generated charges as pixel signals.

[0003] Japanese Patent Laid-Open No. 2018-14476, Japanese Patent Laid-Open No. 2023-171246, Japanese Patent Laid-Open No. 2024-55835

[0004] In recent years, in an optical detection device, two types of on-chip lenses having different sizes have been provided. By changing the size of the on-chip lens, one on-chip lens can be shared by various numbers of pixels, and by adjusting the light condensing, the functions of each pixel can be suitably adjusted. However, in a conventional optical detection device, there is a limit in improving the sensitivity of pixels.

[0005] Therefore, the present disclosure proposes an optical detection device and an electronic device that can improve sensitivity. ​​​​Furthermore, according to the present disclosure, there is an electronic device equipped with a photodetector, wherein the photodetector comprises a pixel array portion including a plurality of pixels arranged in row and column directions on a semiconductor substrate, and a grid-like light-shielding grid pattern that divides the pixels and is provided on the pixel array portion and is composed of a plurality of first light-shielding members provided between adjacent pixels, the pixel array portion includes a plurality of unit units consisting of a predetermined number of adjacent pixels, and within at least one of the unit units, the first light-shielding members constituting the light-shielding grid pattern are not provided between adjacent pixels.

[0008] This is an explanatory diagram showing a planar configuration example of the imaging device 10 according to an embodiment of this disclosure. This is an explanatory diagram showing a cross-sectional configuration example of the pixel 100 according to an embodiment of this disclosure. This is an explanatory diagram showing a planar configuration example of the pixel array section 30a according to a comparative example. This is an explanatory diagram showing a cross-sectional configuration example of the pixel array section 30a according to a comparative example. This is an explanatory diagram showing a planar configuration example of the pixel array section 30 according to the first embodiment of this disclosure. This is an explanatory diagram showing a cross-sectional a modified example of the first embodiment of this disclosure. This is an explanatory diagram showing a planar configuration example of the pixel array section 30 according to the second embodiment of this disclosure. This is an explanatory diagram showing a cross-sectional configuration example of the pixel array section 30 according to the second embodiment of this disclosure. This is an explanatory diagram showing a planar configuration example of the pixel array section 30 according to the third embodiment of this disclosure. This is an explanatory diagram (part 1) showing a planar configuration example of the pixel array section 30 according to the fourth embodiment of this disclosure. This is an explanatory diagram (part 2) showing a planar configuration example of the pixel array section 30 according to the fourth embodiment of this disclosure. This is an explanatory diagram (part 3) showing a planar configuration example of the pixel array section 30 according to the fourth embodiment of this disclosure. This is an explanatory diagram showing a planar configuration example of the pixel array section 30 according to the fifth embodiment of this disclosure. This is an explanatory diagram showing a cross-sectional configuration example of the pixel array section 30 according to the fifth embodiment of this disclosure. This is an explanatory diagram showing a planar configuration example of the pixel array section 30 according to the sixth embodiment of this disclosure. This is an explanatory diagram showing a planar configuration example of the pixel array section 30 according to a modified example of the sixth embodiment of this disclosure. This is an explanatory diagram showing a planar configuration example of the pixel array section 30 according to the seventh embodiment of this disclosure. This is an explanatory diagram showing a cross-sectional configuration example of the pixel array section 30 according to the seventh embodiment of this disclosure. This is an explanatory diagram showing a planar configuration example of the pixel array section 30 according to the eighth embodiment of this disclosure. This is an explanatory diagram showing a cross-sectional configuration example of the pixel array section 30 according to the eighth embodiment of this disclosure. This is an explanatory diagram showing a planar configuration example of the pixel array section 30 according to the ninth embodiment of this disclosure. This is an explanatory diagram showing a cross-sectional configuration example of the pixel array section 30 according to the ninth embodiment of this disclosure. This is an explanatory diagram showing a cross-sectional configuration example of the pixel array section 30 according to the tenth embodiment of this disclosure. This is an explanatory diagram showing an example of a cross-sectional configuration of the pixel array section 30 according to the eleventh embodiment of this disclosure. This is an explanatory diagram showing an example of the general functional configuration of the camera.This block diagram shows an example of the general functional configuration of a smartphone.

[0009] Preferred embodiments of this disclosure will be described in detail below with reference to the accompanying drawings. In this specification and drawings, components having substantially the same functional configuration will be denoted by the same reference numeral to avoid redundant explanation. In addition, in this specification and drawings, multiple components having substantially the same or similar functional configurations may be distinguished by adding a different alphabet after the same reference numeral. However, if there is no particular need to distinguish each of multiple components having substantially the same or similar functional configurations, only the same reference numeral will be used.

[0010] Furthermore, the drawings referenced in the following description are intended to illustrate and facilitate understanding of one embodiment of this disclosure, and for the sake of clarity, the shapes, dimensions, ratios, etc. shown in the drawings may differ from those of the actual product. In addition, the apparatus shown in the drawings may be modified in design as appropriate, taking into consideration the following description and known technology.

[0011] Furthermore, in the following explanation, "sharing" means that different elements (e.g., components) share one other element (e.g., an on-chip lens).

[0012] The explanation will proceed in the following order: 1. Outline configuration of the imaging device 1.1 Imaging device 1.2 Imaging pixels 2. Background 3. First embodiment 3.1 Detailed configuration 3.2 Modification 4. Second embodiment 5. Third embodiment 6. Fourth embodiment 7. Fifth embodiment 8. Sixth embodiment 8.1 Background 8.2 Detailed configuration 8.3 Modification 9. Seventh embodiment 10. Eighth embodiment 11. Ninth embodiment 12. Tenth embodiment 13. Eleventh embodiment 14. Summary 15. Application examples 15.1 Application example to cameras 15.2 Application example to smartphones 16. Supplementary information

[0013] <<1. Outline Configuration of the Imaging Device>> <1.1 Imaging Device> First, with reference to Figure 1, the outline configuration of the imaging device 10 (an example of a photodetector) according to the embodiment of this disclosure will be described. Figure 1 is an explanatory diagram showing an example of the planar configuration of the imaging device 10 according to the embodiment of this disclosure. As shown in Figure 1, the imaging device 10 according to the embodiment of this disclosure has a pixel array section 30 on a semiconductor substrate 200 made of silicon, for example, in which a plurality of pixels (photodetector pixels) 100 are arranged in a matrix-like manner along the row and column directions. The imaging device 10 also has a peripheral circuit section provided on the semiconductor substrate 200 so as to surround the pixel array section 30. Furthermore, the imaging device 10 includes a vertical drive circuit section 32, a column signal processing circuit section 34, a horizontal drive circuit section 36, an output circuit section 38, a control circuit section 40, etc., as the peripheral circuit section. The details of each block of the imaging device 10 will be described below.

[0014] (Pixel Array Section 30) The pixel array section 30 has a plurality of pixels 100 arranged in a matrix on a semiconductor substrate 200, along the row and column directions. Each pixel (photodetection pixel) 100 can detect light as a pixel signal by performing photoelectric conversion on incident light and generating an electric charge. Each pixel 100 has a photoelectric conversion section 210 (see Figure 2) and a plurality of pixel transistors (for example, MOS (Metal-Oxide-Semiconductor) transistors) (not shown). The pixel transistors include, for example, four MOS transistors: a transfer transistor, a selection transistor, a reset transistor, and an amplification transistor. Furthermore, in the pixel array section 30, a plurality of pixels 100 that detect light of different colors are arranged in a two-dimensional manner, for example, according to a Bayer array. Here, a Bayer array is an array pattern in which pixels 100g (see Figure 3A, etc.), which detect light with a green wavelength component (e.g., wavelengths of 495 nm to 570 nm), are arranged in a checkerboard pattern, and in the remaining portion, pixels 100r (see Figure 3A, etc.), which detect light with a red wavelength component (e.g., wavelengths of 620 nm to 750 nm), and pixels 100b (see Figure 3A, etc.), which detect light with a blue wavelength component (e.g., wavelengths of 450 nm to 495 nm), are arranged alternately in rows. In this disclosure, the array of multiple pixels 100 is not limited to a Bayer array. The detailed structure of the pixels 100 will be described later.

[0015] (Vertical drive circuit section 32) The vertical drive circuit section 32 is formed, for example, by a shift register, and selects a pixel drive wiring 42, supplies pulses to the selected pixel drive wiring 42 to drive the pixels 100, and drives the pixels 100 row by row. That is, the vertical drive circuit section 32 sequentially selects and scans each pixel 100 of the pixel array section 30 in the vertical direction (up and down direction in Figure 1) row by row, and supplies a pixel signal based on the signal charge generated according to the amount of light received by the photoelectric conversion section (not shown) of each pixel 100 to the column signal processing circuit section 34, which will be described later, through the vertical signal line 44.

[0016] (Column signal processing circuit 34) The column signal processing circuit 34 is arranged for each column of pixels 100 and performs signal processing such as noise reduction on each pixel column for the pixel signal output from one row of pixels 100. For example, the column signal processing circuit 34 performs signal processing such as CDS (Correlated Double Sampling) and AD (Analog-Digital) conversion to remove pixel-specific fixed pattern noise.

[0017] (Horizontal drive circuit section 36) The horizontal drive circuit section 36 is formed, for example, by a shift register, and sequentially outputs horizontal scanning pulses to sequentially select each of the column signal processing circuit sections 34 described above, and to output pixel signals from each of the column signal processing circuit sections 34 to the horizontal signal line 46.

[0018] (Output circuit section 38) The output circuit section 38 processes the pixel signals that are sequentially supplied from each of the column signal processing circuit sections 34 described above through the horizontal signal line 46 and outputs them. The output circuit section 38 may function as a buffering function, or it may perform processing such as black level adjustment, column variation correction, and various digital signal processing. Buffering refers to temporarily storing pixel signals to compensate for differences in processing speed or transfer speed during the exchange of pixel signals. Furthermore, the input / output terminal 48 is a terminal for exchanging signals with an external device.

[0019] (Control circuit unit 40) The control circuit unit 40 receives the input clock and data that commands the operating mode, etc., and outputs data such as internal information of the imaging device 10. Specifically, the control circuit unit 40 generates clock signals and control signals that serve as the reference for the operation of the vertical drive circuit unit 32, the column signal processing circuit unit 34, and the horizontal drive circuit unit 36, etc., based on the vertical synchronization signal, the horizontal synchronization signal, and the master clock. The control circuit unit 40 then outputs the generated clock signals and control signals to the vertical drive circuit unit 32, the column signal processing circuit unit 34, and the horizontal drive circuit unit 36, etc.

[0020] In the embodiments of this disclosure, the configuration of the imaging device 10 is not limited to the configuration shown in Figure 1.

[0021] <1.2 Imaging Pixel> Next, the schematic configuration of the pixel 100 according to the embodiment of the present disclosure will be described with reference to Figure 2. Figure 2 is an explanatory diagram showing an example of the cross-sectional configuration of the pixel 100 according to the embodiment of the present disclosure, and in detail, it shows a cross-section obtained by cutting the pixel 100 perpendicular to the plane of the semiconductor substrate 200.

[0022] As shown in Figure 2, the pixel 100 mainly consists of a semiconductor substrate 200 and an on-chip lens 350, etc., provided on the light incident surface (upper surface in Figure 2) of the semiconductor substrate 200.

[0023] The semiconductor substrate 200 is made of, for example, a silicon substrate. Furthermore, a photoelectric conversion unit 210 having impurities of a first conductivity type (for example, N-type) is provided within the semiconductor substrate 200, for example, a second conductivity type (for example, P-type). The photoelectric conversion unit 210 has impurities of a first conductivity type (for example, N-type) and can absorb incident light to generate an electric charge as a pixel signal.

[0024] Furthermore, as shown in Figure 2, each pixel 100 has a pixel isolation wall 220 that surrounds and demarcates the pixel region within the semiconductor substrate 200. The pixel isolation wall 220 consists, for example, a trench (not shown) provided to penetrate the semiconductor substrate 200 as a through-DTI (Deep Trench Isolation) along the film thickness direction of the semiconductor substrate 200, and a material consisting of an oxide film or a metal film embedded in the trench.

[0025] Next, the upper side of Figure 2, that is, the side of the semiconductor substrate 200 where light is incident, will be described. Above the light incident surface of the semiconductor substrate 200, an on-chip lens 350 into which light is incident is provided. Below the on-chip lens 350, a color filter 330 is provided. This color filter 330 is, for example, a color filter 330r that transmits red wavelength components, a color filter 330g that transmits green wavelength components, or a color filter 330b that transmits blue wavelength components. In other words, each pixel 100 is provided with a color filter 330 of a color corresponding to the type of pixel 100. For example, multiple color filters 330 are arranged regularly, for example, in a Bayer array.

[0026] Furthermore, a light-shielding portion 360 is provided on the light-incident surface of the semiconductor substrate 200 so as to surround the color filter 330. The light-shielding portion 360 is provided so as to separate adjacent pixels 100, thereby enabling light shielding between adjacent pixels 100.

[0027] In the embodiments of this disclosure, the configuration of the pixel 100 is not limited to the configuration shown in Figure 2.

[0028] <<2. Background>> Next, with reference to Figures 3A and 3B, the background to the present inventors' creation of the embodiments of this disclosure will be explained. Figure 3A is an explanatory diagram showing a planar configuration example of the pixel array section 30a according to a comparative example. Figure 3B is an explanatory diagram showing a cross-sectional configuration example of the pixel array section 30a according to a comparative example, and in detail shows a cross-section obtained by cutting the normal pixel area of ​​the pixel array section 30a along the line B-B' shown in Figure 3A, and a cross-section obtained by cutting the normal pixel area of ​​the pixel array section 30a along the line C-C' shown in Figure 3A. In the following explanation, the configuration of the pixel array section 30a that the present inventors had been studying before creating the embodiments of this disclosure will be referred to as the comparative example.

[0029] The left side of Figure 3A shows the semiconductor substrate 200 side of the pixel array section 30a according to the comparative example. In the pixel array section 30a according to the comparative example, a plurality of pixels 100 are arranged in a matrix on the semiconductor substrate 200. The plurality of pixels 100 include pixels 100g that detect light having a green wavelength component, pixels 100r that detect light having a red wavelength component, and pixels 100b that detect light having a blue wavelength component. In detail, in the pixel array section 30a according to the comparative example, as shown on the left side of Figure 3A, a plurality of unit units are provided, with pixels 100 that detect light of the same color arranged in a 2x2 grid forming one unit unit. Furthermore, in the comparative example, these unit units are arranged, for example, in a Bayer array. In addition, in the comparative example, pixel separation walls 220 are provided between adjacent pixels 100 to separate the pixels 100.

[0030] In the comparative example, multiple color filters 330 (not shown in Figure 3A) are provided to correspond to the pixels 100. The color filters 330 are provided on each pixel 100 and can be, for example, a color filter 330r that transmits the red wavelength component, a color filter 330g that transmits the green wavelength component, or a color filter 330b that transmits the blue wavelength component. That is, each pixel 100 is provided with a color filter 330 of a color corresponding to the type of pixel 100, and the multiple color filters 330 are arranged regularly, for example, in a Bayer array.

[0031] Furthermore, in the comparative example, an on-chip lens 350 is provided on each pixel 100. Specifically, in the pixels 100g that detect green light, one on-chip lens 350a is provided for each pixel 100g. Also, in the pixels 100b that detect blue light and the pixels 100r that detect red light, one on-chip lens 350b is provided for each of the two pixels 100b and 100r that detect two lights of the same color arranged in a 1x2 grid. In other words, in the pixels 100r that detect red light and the pixels 100b that detect blue light, the two pixels 100b and 100r that detect two lights of the same color share one on-chip lens 350b. In the comparative example, two types of on-chip lenses 350a and 350b with different sizes are provided.

[0032] Furthermore, in the center of Figure 3A, a light-shielding section 360 is shown that separates the color filter 330 in the normal pixel area. For the pixels 100 included in the normal pixel area, the pixel 100g that detects green light functions as an imaging pixel for capturing images. In addition, pixels 100b and 100r that detect two lights of the same color arranged in a 1x2 grid and sharing one on-chip lens 350b may not only function as imaging pixels for capturing images, but also as a pair of phase difference detection pixels that detect phase differences for autofocus. Specifically, the images captured by the two pixel signals obtained from pixels 100b and 100r that detect two lights of the same color arranged in a 1x2 grid will match when the image is in focus, and will not match when the image is out of focus. Therefore, the phase difference can be detected by detecting the difference between the two pixel signals obtained from the pair of pixels 100b and 100r. Furthermore, by detecting such differences in pixel signals (phase differences) as difference signals in, for example, the detection unit (not shown) of the output circuit unit 38, calculating the amount of defocus based on the detected phase difference, and adjusting (moving) the imaging lens (not shown), autofocus can be achieved.

[0033] Furthermore, in the normal pixel region shown in the center of Figure 3A, pixels 100b, 100g, and 100r are arranged in a Bayer array, as shown on the left side of Figure 3A. As shown in the center of Figure 3A, for the unit unit of pixel 100g that detects green light in the normal pixel region, the light-shielding portion 360 has a grid-like pattern that separates adjacent pixels 100g. In addition, for the pixel 100r that detects red light and the pixel 100b that detects blue light, the light-shielding portion 360 is provided so as to separate the two on-chip lenses 350 within the same unit unit in a plan view.

[0034] Furthermore, the right side of Figure 3A shows a light-shielding section 360 that separates the color filter 330 in the phase difference pixel region. In the phase difference pixel region shown on the right side of Figure 3A, it is assumed that pixels 100b, 100g, and 100r are arranged in a Bayer array, as shown on the left side of Figure 3A.

[0035] The phase difference pixel region includes a phase difference detection pixel 100a, which has the same function as the pixels 100 in the normal pixel region, as well as a light-shielding film 320 covering the light incident surface. Specifically, the phase difference detection pixel 100a has the same configuration as the imaging pixels, and one of the pair of phase difference detection pixels 100a arranged side by side is provided with a light-shielding film 320 covering the light incident surface. Therefore, the phase difference detection pixel 100a covered with the light-shielding film 320 cannot function as an imaging pixel for imaging. The pair of phase difference detection pixels 100a, by using such a light-shielding film 320, can, for example, split the light incident from one image into left and right, and obtain two pixel signals as a pair of phase difference detection pixels 100a with asymmetric sensitivity to the angle of incidence of light (pupil division). Then, by detecting the difference between the two pixel signals obtained from the pair of phase difference detection pixels 100a, the phase difference can be detected.

[0036] As shown on the right side of Figure 3A, in the unit unit of pixels 100g that detect green light in the phase difference detection region, the light-shielding portion 360 has a grid-like pattern that separates adjacent pixels 100g. Similarly, in the unit unit of phase difference detection pixels 100a, the light-shielding portion 360 has a grid-like pattern that separates adjacent phase difference detection pixels 100a. Furthermore, in the unit unit of pixels 100r that detect red light, the light-shielding portion 360 is provided so as to separate two on-chip lenses 350 within the same unit unit in a plan view.

[0037] In the comparative example, as shown in Figure 3B, the pixel 100 mainly comprises a semiconductor substrate 200, an on-chip lens 350 provided on the light incident surface of the semiconductor substrate 200 (the upper surface in Figure 3B), and the like.

[0038] In detail, in the comparative example, a photoelectric conversion unit 210 is provided within the semiconductor substrate 200. Furthermore, the photoelectric conversion unit 210 can absorb incident light and generate an electric charge. Also, as shown in Figure 3B, the pixel 100 has a pixel isolation wall 220 that surrounds and demarcates the pixel region within the semiconductor substrate 200. The pixel isolation wall 220 is provided, for example, as a through-DTI.

[0039] Next, the upper side in Figure 3B, that is, the side of the semiconductor substrate 200 where light is incident, will be described. In the comparative example, an on-chip lens 350 into which light is incident is provided above the light incident surface of the semiconductor substrate 200. In the comparative example, a color filter 330 is provided below the on-chip lens 350 and above the light incident surface of the semiconductor substrate 200.

[0040] Furthermore, in the comparative example, a light-shielding portion 360 is provided on the light-incident surface of the semiconductor substrate 200 so as to surround the color filter 330. The light-shielding portion 360 is provided so as to separate adjacent pixels 100, thereby enabling light shielding between adjacent pixels 100.

[0041] Thus, in the comparative example, two types of on-chip lenses 350a and 350b with different sizes are provided. More specifically, in the comparative example, two pixels 100b and 100r that detect two lights of the same color arranged in a 1x2 grid share an on-chip lens 350b that is larger in size than on-chip lens 350a. Furthermore, in the comparative example, for the pixel 100r that detects red light and the pixel 100b that detects blue light, the light-shielding portion 360 is provided so as to separate the two on-chip lenses 350 within the same unit in a plan view.

[0042] However, in the comparative example, there is a limit to how much the area of ​​pixels 100b and 100r can be increased in the pixel 100r that detects red light and the pixel 100b that detects blue light, resulting in low sensitivity as imaging pixels. Therefore, in light of this situation, the inventors have created the embodiments of the present disclosure described below in order to improve the sensitivity of pixels 100b and 100r. The details of the embodiments of the present disclosure created by the inventors will be described in order below.

[0043] <<3. First Embodiment>> <3.1 Detailed Configuration> First, the detailed configuration of the pixel array section 30 according to the first embodiment of the present disclosure will be described with reference to Figures 4A and 4B. Figure 4A is an explanatory diagram showing an example of the planar configuration of the pixel array section 30 according to the present embodiment. Figure 4B is an explanatory diagram showing an example of the cross-sectional configuration of the pixel array section 30 according to the present embodiment, and more specifically, it shows a cross-section obtained by cutting the normal pixel area of ​​the pixel array section 30 along the line B-B' shown in Figure 4A, and a cross-section obtained by cutting the normal pixel area of ​​the pixel array section 30 along the line C-C' shown in Figure 4A.

[0044] On the left side of FIG. 4A, the semiconductor substrate 200 side of the pixel array unit 30 according to the present embodiment is shown. As shown on the left side of FIG. 4A, in the pixel array unit 30 according to the present embodiment, a plurality of pixels 100 are arranged in a matrix on the semiconductor substrate 200. The plurality of pixels 100 include a pixel 100g that detects light having a green wavelength component, a pixel 100r that detects light having a red wavelength component, and a pixel 100b that detects light having a blue wavelength component. Specifically, in the pixel array unit 30 according to the present embodiment, as shown on the left side of FIG. 4A, pixels 100 that detect the same-color light arranged in two rows and two columns are used as one unit unit, and a plurality of unit units are provided. Note that a plurality of pixels 100 within one unit unit may share a charge accumulation unit (not shown) that accumulates generated charges.

[0045] Furthermore, in the present embodiment, the pixel array unit 30 has a plurality of unit units, and these unit units are arranged, for example, in a Bayer arrangement. Note that in the present embodiment, the arrangement of the unit units is not limited to the Bayer arrangement.

[0046] Furthermore, in the present embodiment, a pixel separation wall 220 that separates the pixels 100 is provided between adjacent pixels 100 in the semiconductor substrate 200.

[0047] Furthermore, in this embodiment, a plurality of color filters 330 (not shown in Figure 4A) are provided to correspond to the pixels 100. The color filters 330 are provided on each pixel 100 and can be, for example, a color filter 330r that transmits red wavelength components, a color filter 330g that transmits green wavelength components, or a color filter 330b that transmits blue wavelength components. In this embodiment, the color filters 330 are not limited to the above-mentioned color filters 330b, 330g, and 330r. In this embodiment, the color filters 330 may be, for example, a color filter 330 that transmits light with a yellow wavelength component, a color filter 330 that transmits light with a magenta wavelength component, or a color filter 330 that transmits light with a cyan wavelength component. That is, in this embodiment, each pixel 100 is provided with a color filter 330 of a color corresponding to the type of pixel 100, and the plurality of color filters 330 are arranged regularly, for example, in a Bayer array.

[0048] Furthermore, in the present embodiment, as shown on the left side of FIG. 4A, an on-chip lens 350 is provided on each pixel 100. Specifically, in the present embodiment as well, for a pixel 100g (an example of the first pixel) that detects green light, one on-chip lens 350a is provided for each pixel 100g. Also, in the present embodiment, for pixels 100b (an example of the second pixel) that detect blue light and pixels 100r (an example of the second pixel) that detect red light, one on-chip lens 350b is provided for every two pixels 100b and 100r that detect two same-color lights arranged in one row and two columns. In other words, for pixels 100b that detect blue light and pixels 100r that detect red light, the two pixels 100b and 100r that detect two same-color lights share one on-chip lens 350b. That is, in the present embodiment, two types of on-chip lenses 350a and 350b having different sizes are provided. In each of the following embodiments of the present disclosure, it is sufficient if two or more types of on-chip lenses 350 having different sizes are provided in the pixel array unit 30 of the imaging device 10, and the types, numbers, and arrangements of pixels 100 that share each on-chip lens 350 are not limited to the above examples.

[0049] In the present embodiment, for pixels 100 included in the normal pixel region, similar to the comparative example, a pixel 100g that detects green light is assumed to function as an imaging pixel for imaging. Also, in the present embodiment, similar to the comparative example, two pixels 100b and 100r that detect two same-color lights arranged in one row and two columns and share one on-chip lens 350b may have not only the function as an imaging pixel for imaging but also the function of detecting a phase difference for autofocus as a pair of phase difference detection pixels. Furthermore, in the present embodiment as well, similar to the comparative example, the phase difference detection pixel region includes phase difference detection pixels 100a provided with a light shielding film 320 covering the light incident surface in addition to pixels 100 having the same function as pixels 100 in the normal pixel region.

[0050] Furthermore, in the center of Figure 4A, a light-shielding section 360 is shown that divides the color filter 330 in the normal pixel area. In this embodiment, the normal pixel area shown in the center of Figure 4A is assumed to have pixels 100b, 100g, and 100r arranged in a Bayer array, as shown on the left side of Figure 4A. In this embodiment, as shown in the center of Figure 4A, for the unit unit of pixel 100g that detects green light in the normal pixel area, the light-shielding section 360 has a grid-like grid pattern (light-shielding grid pattern) that divides the space between adjacent pixels 100g. In detail, the grid-like grid pattern is composed of a grid arrangement of multiple light-shielding members (first light-shielding members) provided between the pixels 100g. Furthermore, in this embodiment, for pixels 100b that detect blue light and pixels 100r that detect red light, there is no light-shielding section 360 that divides the space between adjacent pixels 100b and 100r that detect the same color.

[0051] Furthermore, the right side of Figure 4A shows a light-shielding section 360 that divides the color filter 330 in the phase difference pixel region. In this embodiment, the phase difference pixel region shown on the right side of Figure 4A is assumed to have pixels 100b, 100g, and 100r arranged in a Bayer array, as shown on the left side of Figure 4A. In this embodiment, as shown on the right side of Figure 4A, for the unit unit of pixel 100g that detects green light in the phase difference detection pixel region, the light-shielding section 360 has a grid-like pattern that divides adjacent pixels 100g. Similarly, for the unit unit of phase difference detection pixel 100a, the light-shielding section 360 also has a grid-like pattern that divides adjacent phase difference detection pixels 100a. Furthermore, in this embodiment, for the unit unit of pixel 100r that detects red light, there is no light-shielding section 360 that divides adjacent pixels 100r that detect light of the same color.

[0052] In other words, in this embodiment, in the normal pixel region, for pixels 100b that detect blue light and pixels 100r that detect red light, there is no light-shielding section 360 separating adjacent pixels 100b and 100r that detect the same color. Also, in this embodiment, in the phase difference detection pixel region, for the unit unit of pixels 100r that detect red light, there is no light-shielding section 360 separating adjacent pixels 100r that detect the same color. In this embodiment, by doing so, more light can be incident on the photoelectric conversion unit 210 in these pixels 100b and 100r, thereby improving the sensitivity of pixels 100b and 100r.

[0053] Furthermore, in this embodiment, as shown in Figure 4B, the pixel 100 mainly comprises a semiconductor substrate 200, an on-chip lens 350 provided on the light incident surface (the upper surface in Figure 4B) of the semiconductor substrate 200, and the like.

[0054] In detail, the semiconductor substrate 200 is made of, for example, a silicon substrate. In this embodiment, for example, a photoelectric conversion unit 210 having an impurity of a first conductivity type (for example, N type) is provided in a semiconductor substrate 200 having a second conductivity type (for example, P type). Furthermore, the photoelectric conversion unit 210 has an impurity of, for example, a first conductivity type (for example, N type) and can absorb incident light to generate an electric charge. Furthermore, the charge generated in the photoelectric conversion unit 210 is transferred to a charge storage unit (not shown) by the gate of a transfer transistor (not shown) provided on the surface of the semiconductor substrate 200 opposite to the light incident surface. The charge storage unit is provided on the surface side of the semiconductor substrate 200 and contains an impurity having the same first conductivity type (for example, N type) as the photoelectric conversion unit 210, but at a higher concentration than the photoelectric conversion unit 210.

[0055] Furthermore, as shown in Figure 4B, the pixel 100 has a pixel isolation wall 220 that surrounds and demarcates the pixel region within the semiconductor substrate 200. The pixel isolation wall 220 consists, for example, of a trench (not shown) provided as a through-DTI that penetrates the semiconductor substrate 200 along the film thickness direction of the semiconductor substrate 200, and a material consisting of an oxide film or a metal film embedded in the trench.

[0056] Next, the upper side in Figure 4B, that is, the side of the semiconductor substrate 200 where light is incident, will be described. Above the light incident surface of the semiconductor substrate 200, an on-chip lens 350 into which light is incident is provided. The on-chip lens 350 is formed from, for example, a styrene-based resin, an acrylic-based resin, a styrene-acrylic copolymer resin, or a siloxane-based resin.

[0057] Furthermore, a color filter 330 is provided below the on-chip lens 350 and above the light incident surface of the semiconductor substrate 200. The color filter 330 can be formed from a material in which a pigment or dye is dispersed in a transparent binder such as silicone.

[0058] Furthermore, a light-shielding portion 360 is provided on the light incident surface of the semiconductor substrate 200 so as to surround the color filter 330. The light-shielding portion 360 is provided so as to separate adjacent pixels 100, thereby enabling light shielding between adjacent pixels 100. The light-shielding portion 360 is made of a light-shielding material and can be formed using, for example, a metallic material such as tungsten (W), aluminum (Al), or copper (Cu). In this embodiment, the light-shielding portion 360 is not limited to being made of a light-shielding material, but may be made of, for example, a low refractive index material (including Air).

[0059] In this embodiment, as shown in Figure 4B, for the pixel 100b that detects blue light and the pixel 100r that detects red light, there is no light-shielding section 360 separating adjacent pixels 100b and 100r that detect the same color. In this embodiment, by doing so, more light can be incident on the photoelectric conversion unit 210 through these pixels 100b and 100r, thereby improving the sensitivity of the pixels 100b and 100r.

[0060] As described above, in this embodiment, the pixels 100b that detect blue light and the pixels 100r that detect red light are not provided with a light-shielding section 360 that separates adjacent pixels 100b and 100r that detect the same color. In this embodiment, by doing so, more light can be incident on the photoelectric conversion section 210 for these pixels 100b and 100r, thereby improving the sensitivity of the pixels 100b and 100r. In this embodiment, the pixel array section 30 is not limited to the form shown in Figures 4A and 4B, but can be transformed into various forms.

[0061] <3.2 Modified Examples> Next, with reference to Figure 5, the detailed configuration of the pixel array section 30 according to a modified example of this embodiment will be described. Figure 5 is an explanatory diagram showing an example of the cross-sectional configuration of the pixel array section 30 according to this modified example, and in detail, it shows a cross-section obtained by cutting the normal pixel area of ​​the pixel array section 30 along the line B-B' shown in Figure 4A, and a cross-section obtained by cutting the normal pixel area of ​​the pixel array section 30 along the line C-C' shown in Figure 4A.

[0062] In the embodiment described above, the on-chip lens 350a provided for each pixel 100g and the on-chip lens 350b provided for each pixel 100b, 100r that detect two lights of the same color had the same height. However, in this modified example, the on-chip lenses 350a and 350b are not limited to having the same height, but may have different heights. Specifically, in this modified example, for example as shown in Figure 5, the height of the on-chip lens 350b provided for each pixel 100b, 100r that detects two lights of the same color may be higher than the on-chip lens 350a provided for each pixel 100g. In this modified example, for example, the height of the on-chip lens 350b provided for each pixel 100b, 100r that detects two lights of the same color may be lower than the on-chip lens 350a provided for each pixel 100g. In this modified example, by suitably adjusting the height of the on-chip lens 350 for each pixel 100 in this way, light can be efficiently focused to a position corresponding to the wavelength of light.

[0063] <<4. Second Embodiment>> Next, the detailed configuration of the pixel array section 30 according to the second embodiment of the present disclosure will be described with reference to Figures 6A and 6B. Figure 6A is an explanatory diagram showing an example of the planar configuration of the pixel array section 30 according to this embodiment. Figure 6B is an explanatory diagram showing an example of the cross-sectional configuration of the pixel array section 30 according to this embodiment, and in detail shows a cross-section obtained by cutting the normal pixel area of ​​the pixel array section 30 along the line B-B' shown in Figure 6A, and a cross-section obtained by cutting the normal pixel area of ​​the pixel array section 30 along the line C-C' shown in Figure 6A. Here, the explanation of points common to the first embodiment described above will be omitted, and only the differences will be explained.

[0064] In the normal pixel region shown in the center of Figure 6A, pixels 100b, 100g, and 100r are arranged in a Bayer array, as shown on the left side of Figure 6A. In this embodiment, as shown in the center of Figure 6A and in Figure 6B, the unit unit of pixel 100g that detects green light in the normal pixel region is also not provided with a light-shielding portion 360 that separates the pixel 100g.

[0065] Furthermore, in the phase difference pixel region shown on the right side of Figure 6A, pixels 100b, 100g, and 100r are assumed to be arranged in a Bayer array, as shown on the left side of Figure 6A. In this embodiment, as shown on the right side of Figure 6A, the unit unit of the phase difference detection pixel 100a is also not provided with a light-shielding portion 360 that separates the phase difference detection pixel 100a.

[0066] As described above, in this embodiment, the pixels 100g that detect green light and the phase difference detection pixels 100a are not provided with a light-shielding section 360 that separates adjacent pixels 100a and 100g that detect light of the same color. In this embodiment, by doing so, more light can be incident on the photoelectric conversion unit 210, thereby improving the sensitivity of the pixels 100a and 100g. In this embodiment, the pixel array section 30 is not limited to the configuration shown in Figures 6A and 6B, but can be transformed into various configurations.

[0067] <<5. Third Embodiment>> First, with reference to Figure 7, the detailed configuration of the pixel array unit 30 according to the third embodiment of this disclosure will be described. Figure 7 is an explanatory diagram showing an example of the planar configuration of the pixel array unit 30 according to this embodiment.

[0068] In the first embodiment described above, for the pixels 100b that detect blue light and the pixels 100r that detect red light, one on-chip lens 350b was provided for each of the two pixels 100b and 100r that detect two lights of the same color arranged in a 1x2 grid. However, in this embodiment, it is not limited to the sharing of one on-chip lens 350 by the pixels 100 arranged in this way. For example, in this embodiment, as shown in Figure 7, one on-chip lens 350b may be provided for each of the two pixels 100g and 100r that detect two lights of the same color arranged in a 2x1 grid.

[0069] In this embodiment, the pixel array section 30 is not limited to the configuration shown in Figure 7, but can be transformed into various configurations.

[0070] <<6. Fourth Embodiment>> Next, the detailed configuration of the pixel array unit 30 according to the fourth embodiment of the present disclosure will be described with reference to Figures 8A to 8C. Figures 8A to 8C are explanatory diagrams showing an example of the planar configuration of the pixel array unit 30 according to this embodiment. Here, the explanation of points common to the first embodiment described above will be omitted, and only the differences will be explained.

[0071] As shown in Figures 8A to 8C, in the pixel array section 30 according to this embodiment, a plurality of pixels 100 are arranged in a matrix on the semiconductor substrate 200. The plurality of pixels 100 include pixels 100g that detect green light, pixels 100r that detect red light, and pixels 100b that detect blue light. In detail, in the example shown in Figures 8A to 8C, pixels 100 that detect light of the same color arranged in a 2x2 grid are treated as a single unit, and these unit units are arranged in a Bayer array.

[0072] Furthermore, in this embodiment, as shown in Figures 8A to 8C, an on-chip lens 350 is provided on each pixel 100. More specifically, in the example shown in Figures 8A to 8C, for the pixels 100g that detect green light, one on-chip lens 350a is provided for each pixel 100g. For the pixels 100b that detect blue light and the pixels 100r that detect red light, one on-chip lens 350b is provided for every two pixels 100b and 100r arranged in a 1x2 grid.

[0073] In the embodiments described above, the row-direction length of the on-chip lens 350b provided for each pixel 100b, 100r that detects two lights of the same color was the same as the row-direction length of the unit unit. Also, in the embodiments described above, the column-direction length of the on-chip lens 350b was the same as the column-direction length of the pixels 100b, 100r.

[0074] On the other hand, in this embodiment, as shown in Figure 8A, the row length of the on-chip lens 350b provided for each pixel 100b, 100r that detects two lights of the same color may be shorter than the row length of the unit unit. Furthermore, in this embodiment, as shown in Figure 8A, the column length of the on-chip lens 350b may be shorter than the column length of the pixels 100b, 100r.

[0075] Alternatively, in this embodiment, as shown in Figure 8B, the row-direction length of the on-chip lens 350b provided for each pixel 100b, 100r that detects two lights of the same color may be shorter than the row-direction length of the unit unit. Furthermore, in this embodiment, as shown in Figure 8B, the column-direction length of the on-chip lens 350b may be the same as the column-direction length of the pixels 100b, 100r.

[0076] Alternatively, in this embodiment, as shown in Figure 8C, the row length of the on-chip lens 350b provided for each pixel 100b, 100r that detects two lights of the same color may be the same as the row length of the unit unit. Furthermore, in this embodiment, as shown in Figure 8C, the column length of the on-chip lens 350b may be shorter than the column length of the pixels 100b, 100r.

[0077] As described above, in this embodiment, the size of the on-chip lens 350b provided for each pixel 100b, 100r that detects two lights of the same color is smaller than in the embodiments described so far. In this embodiment, by doing so, the on-chip lens 350b and the on-chip lens 350a do not come into contact with each other, and the on-chip lens 350a can be made to a size that occupies the entire pixel 100g. As a result, according to this embodiment, the sensitivity of the pixel 100g can be improved. Furthermore, in this embodiment, the on-chip lenses 350b located on the diagonal of the pixel array section 30 shown in Figures 8A to 8C can avoid coming into contact with each other because the size of the on-chip lenses 350b is smaller. As a result, according to this embodiment, the mixing of light (color mixing) can be avoided between unit units located on the diagonal of the pixel array section 30.

[0078] In this embodiment, the pixel array section 30 is not limited to the configuration shown in Figures 8A to 8C, but can be transformed into various configurations.

[0079] <<7. Fifth Embodiment>> Next, the detailed configuration of the pixel array section 30 according to the fifth embodiment of the present disclosure will be described with reference to Figures 9A and 9B. Figure 9A is an explanatory diagram showing an example of the planar configuration of the pixel array section 30 according to this embodiment. Figure 9B is an explanatory diagram showing an example of the cross-sectional configuration of the pixel array section 30 according to this embodiment, and in detail shows a cross-section obtained by cutting the normal pixel area of ​​the pixel array section 30 along the line B-B' shown in Figure 9A. Here, the explanation of points common with the fourth embodiment described above will be omitted, and only the differences will be explained.

[0080] In the embodiments described above, the row-direction length of the on-chip lens 350a provided for each pixel 100g was the same as the row-direction length of the pixel 100g. Also, in the embodiments described above, the column-direction length of the on-chip lens 350a was the same as the column-direction length of the pixel 100g.

[0081] On the other hand, in this embodiment, as shown in Figure 9A, the size of the on-chip lens 350b provided for each pixel 100r, 100b that detects two lights of the same color may be reduced, similar to the fourth embodiment described above. Furthermore, in this embodiment, the row length of the on-chip lens 350a provided for each pixel 100g may be longer than the row length of the pixel 100g. In addition, in this embodiment, as shown in Figure 9A, the column length of the on-chip lens 350a may be longer than the row length of the pixel 100g.

[0082] Alternatively, in this embodiment, the row length of the on-chip lens 350a provided for each pixel 100g may be the same as the row length of the pixel 100g. In addition, in this embodiment, the column length of the on-chip lens 350a may be longer than the row length of the pixel 100g.

[0083] Alternatively, in this embodiment, the row-direction length of the on-chip lens 350a provided for each pixel 100g may be longer than the row-direction length of the pixel 100g. In addition, in this embodiment, the column-direction length of the on-chip lens 350a may be the same as the row-direction length of the pixel 100g.

[0084] As described above, in this embodiment, the size of the on-chip lens 350b provided for each pixel 100r, 100b that detects two lights of the same color is reduced, and the size of the on-chip lens 350a provided for each pixel 100g is increased. By doing so, according to this embodiment, the size of the on-chip lens 350a can be increased, which allows for greater light collection and further improves the sensitivity of the pixel 100g.

[0085] Furthermore, in this embodiment, since the size of the on-chip lens 350b is reduced, the contact area between the on-chip lens 350b and the color filters 330b and 330r becomes smaller. As a result, the adhesion of the on-chip lens 350b decreases, and there is a risk that the on-chip lens 350b may peel off easily.

[0086] Therefore, in this embodiment, as shown in Figure 9B, the cross-sectional shape of the on-chip lens 350b, when cut along the film thickness direction of the semiconductor substrate 200, is made into a tapered shape that widens from the on-chip lens 350b side toward the semiconductor substrate 200 side. By doing so, according to this embodiment, the contact area between the on-chip lens 350b and the color filters 330b and 330r is increased, which improves adhesion and suppresses peeling of the on-chip lens 350b. In addition, according to this embodiment, the thinned areas of the on-chip lens 350b can be reduced, which enhances the passivation effect of the pixels 100b and 100r by the on-chip lens 350b.

[0087] Furthermore, in this embodiment, as shown in Figure 9B, the cross-sectional shape of the on-chip lens 350a, when cut along the film thickness direction of the semiconductor substrate 200, may be a tapered shape that widens from the on-chip lens 350a side toward the semiconductor substrate 200 side. By doing so, according to this embodiment, the contact area between the on-chip lens 350a and the color filter 330g is increased, which improves adhesion and suppresses peeling of the on-chip lens 350a. In addition, according to this embodiment, the thinned areas of the on-chip lens 350a can be reduced, thereby enhancing the passivation effect of the pixel 100g by the on-chip lens 350a.

[0088] In this embodiment, the pixel array section 30 is not limited to the configuration shown in Figures 9A and 9B, but can be transformed into various configurations.

[0089] <<8. Sixth Embodiment>> <8.1 Background> In each embodiment of the present disclosure described so far, the sensitivity of adjacent pixels 100 that detect light of the same color was improved by not providing a light-shielding portion 360 between them. However, because the light-shielding portion 360 is not provided, there is a possibility of color mixing occurring between adjacent pixels 100 that detect light of the same color.

[0090] Therefore, the present inventors have come up with a sixth embodiment of the present disclosure that can further suppress the occurrence of color mixing between adjacent pixels 100 that detect light of the same color while improving sensitivity. The details of the sixth embodiment created by the present inventors will be described below.

[0091] <8.2 Detailed Configuration> First, the detailed configuration of the pixel array section 30 according to the sixth embodiment of this disclosure will be described with reference to Figure 10. Figure 10 is an explanatory diagram showing an example of the planar configuration of the pixel array section 30 according to this embodiment.

[0092] The left side of Figure 10 shows the semiconductor substrate 200 side of the pixel array section 30 according to this embodiment. As shown on the left side of Figure 10, in the pixel array section 30 according to this embodiment, a plurality of pixels 100 are arranged in a matrix on the semiconductor substrate 200. The plurality of pixels 100 include pixels 100g that detect green light, pixels 100r that detect red light, and pixels 100b that detect blue light. In this embodiment as well, pixels 100 that detect light of the same color arranged in a 2x2 grid are treated as one unit unit, and these plurality of unit units are arranged, for example, in a Bayer array. However, this embodiment is not limited to a Bayer array. Furthermore, in this embodiment as well, pixel separation walls 220 are provided between adjacent pixels 100 in the semiconductor substrate 200 to separate the pixels 100.

[0093] Furthermore, in this embodiment, a plurality of color filters 330 (not shown in Figure 10) are provided to correspond to the pixels 100. The color filters 330 are provided on each pixel 100 and can be, for example, a color filter 330r that transmits red wavelength components, a color filter 330g that transmits green wavelength components, or a color filter 330b that transmits blue wavelength components. Moreover, in this embodiment, each pixel 100 is provided with a color filter 330 of a color corresponding to the type of pixel 100, and the plurality of color filters 330 are arranged regularly, for example, in a Bayer array.

[0094] Furthermore, in this embodiment, as shown on the left side of Figure 10, an on-chip lens 350 is provided on each pixel 100. More specifically, in this embodiment as well, for pixels 100g that detect green light (an example of a first pixel), one on-chip lens 350a is provided for each pixel 100g. Also, in this embodiment, for pixels 100b that detect blue light (an example of a second pixel) and pixels 100r that detect red light (an example of a second pixel), one on-chip lens 350b is provided for each pixel 100b, 100r that detects two lights of the same color arranged in a 1x2 grid. In this embodiment, it is sufficient that the pixel array section 30 of the imaging device 10 is provided with two or more on-chip lenses 350 of different sizes, and the type, number, and arrangement of pixels 100 that share each on-chip lens 350 are not limited to the above example.

[0095] Furthermore, in this embodiment, as in the embodiments described above, the pixel 100g that detects green light functions as an imaging pixel that performs imaging. Also, in this embodiment, as in the embodiments described above, the pixels 100b and 100r that detect two lights of the same color arranged in a 1x2 grid and sharing one on-chip lens 350b may not only function as imaging pixels that perform imaging, but also as a pair of phase difference detection pixels that detect phase differences for autofocus.

[0096] Furthermore, the right side of Figure 10 shows a light-shielding section 360 that divides the color filter 330. In this embodiment as well, as shown on the right side of Figure 10, for the unit unit of pixels 100g that detect green light, the light-shielding section 360 has a grid-like grid pattern (light-shielding grid pattern) that divides the space between adjacent pixels 100g. In detail, the grid-like grid pattern is formed by arranging a plurality of light-shielding members (first light-shielding members) in a grid pattern between the pixels 100g.

[0097] Furthermore, in this embodiment, as shown on the right side of Figure 10, for the unit units of a pixel 100b that detects blue light and a pixel 100r that detects red light, a light-shielding portion (second light-shielding member) with lower light-shielding performance than the light-shielding member of the light-shielding portion 360 provided between pixels 100g is provided between adjacent pixels 100b and 100r that detect the same color. In other words, for the pixel 100b that detects blue light and the pixel 100r that detects red light, a light-shielding member with lower light-shielding performance than the light-shielding member of the light-shielding portion 360 is provided so as to separate the on-chip lens 350 in a plan view. More specifically, in this embodiment, as shown on the right side of Figure 10, the light-shielding member of the light-shielding portion 360 located between two pixels 100b and 100r that detect the same color has a slit 362. In the example shown in Figure 10, light-shielding members are provided on two pixels 100b and 100r that detect light of the same color, thereby suppressing color mixing between the two pixels 100b and 100r that detect light of the same color. Furthermore, in the example shown in Figure 10, a slit 362 is provided to collect more light from pixels 100b and 100r, thereby improving the sensitivity of these pixels 100b and 100r.

[0098] As described above, in this embodiment, for the pixel 100b that detects blue light and the pixel 100r that detects red light, a light-shielding portion with lower light-shielding properties than the light-shielding member of the light-shielding portion 360 provided between the pixels 100g is provided between the two pixels 100b and 100r that detect light of the same color. In this way, according to this embodiment, it is possible to improve the sensitivity of the pixels 100b and 100r while suppressing the occurrence of color mixing between the two pixels 100r and 100b that detect light of the same color.

[0099] In this embodiment, the pixel array section 30 is not limited to the configuration shown in Figure 10, but can be transformed into various configurations.

[0100] <8.3 Modified Examples> Next, with reference to Figure 11, the detailed configuration of the pixel array section 30 according to a modified example of this embodiment will be described. Figure 11 is an explanatory diagram showing a planar configuration example of the pixel array section 30 according to this modified example.

[0101] In this modified example, for the pixel 100b that detects blue light and the pixel 100r that detects red light, a light-shielding section with lower light-shielding properties than the light-shielding material of the light-shielding section 360 provided between the pixels 100g is provided between the two pixels 100b and 100r that detect light of the same color. More specifically, in this modified example, as shown on the right side of Figure 11, a light-shielding section 364 made of a material with lower light-shielding properties than the light-shielding material of the light-shielding section 360 is provided between the two pixels 100b and 100r that detect light of the same color. With this modified example, it is possible to improve the sensitivity of the pixels 100b and 100r while suppressing the occurrence of color mixing between the two pixels 100b and 100r that detect light of the same color.

[0102] <<9. Seventh Embodiment>> Next, the detailed configuration of the pixel array section 30 according to the seventh embodiment of the present disclosure will be described with reference to Figures 12A and 12B. Figure 12A is an explanatory diagram showing an example of the planar configuration of the pixel array section 30 according to the present embodiment. Figure 12B is an explanatory diagram showing an example of the cross-sectional configuration of the pixel array section 30 according to the present embodiment, and in detail shows a cross-section obtained by cutting the pixel array section 30 along the line D-D' shown in Figure 12A, and a cross-section obtained by cutting the pixel array section 30 along the line E-E' shown in Figure 12A. The seventh embodiment of the present disclosure is an embodiment that further elaborates on the sixth embodiment described above.

[0103] Figure 12A shows the pixel array section 30 according to this embodiment. As shown in Figure 12A, in the pixel array section 30 according to this embodiment, a plurality of pixels 100 are arranged in a matrix on the semiconductor substrate 200. The plurality of pixels 100 include pixels 100g that detect green light, pixels 100r that detect red light, and pixels 100b that detect blue light. In this embodiment as well, pixels 100 that detect light of the same color arranged in a 2x2 grid are treated as one unit unit, and these plurality of unit units are arranged, for example, in a Bayer array. However, this embodiment is not limited to a Bayer array.

[0104] In this embodiment as well, a plurality of color filters 330 (not shown in Figure 12A) are provided to correspond to the pixels 100. The color filters 330 are provided on each pixel 100 and can be, for example, a color filter 330r that transmits red wavelength components, a color filter 330g that transmits green wavelength components, or a color filter 330b that transmits blue wavelength components.

[0105] Furthermore, in this embodiment, as shown in Figure 12A, an on-chip lens 350 is provided on each pixel 100. More specifically, in this embodiment as well, for pixels 100g that detect green light (an example of a first pixel), one on-chip lens 350a is provided for each pixel 100g. Also in this embodiment, for pixels 100b that detect blue light (an example of a second pixel) and pixels 100r that detect red light (an example of a second pixel), one on-chip lens 350b is provided for each pixel 100b, 100r that detects two lights of the same color arranged in a 1x2 grid.

[0106] Furthermore, in this embodiment, a light-shielding portion 360 is provided to divide the color filter 330. More specifically, as shown in Figure 12A, in this embodiment as well, in the unit unit of pixels 100g that detect green light, the light-shielding portion 360 has a grid-like pattern that divides the space between adjacent pixels 100g.

[0107] Furthermore, in this embodiment, as shown in Figure 12A, for the unit units of a pixel 100b that detects blue light and a pixel 100r that detects red light, a light-shielding portion 360 having a slit 362 is provided between the two pixels 100b and 100r that detect light of the same color.

[0108] Furthermore, in this embodiment as well, as shown in Figure 12B, the pixel 100 mainly comprises a semiconductor substrate 200, an on-chip lens 350 provided on the light incident surface of the semiconductor substrate 200 (the upper surface in Figure 4B), and the like.

[0109] More specifically, as shown in Figure 12B, the semiconductor substrate 200 is made of, for example, a silicon substrate. In this embodiment, a photoelectric conversion unit 210 is provided within the semiconductor substrate 200. The pixel 100 also has a pixel isolation wall 220 that surrounds and demarcates the pixel area within the semiconductor substrate 200. The pixel isolation wall 220 consists of, for example, a trench (not shown) provided in the semiconductor substrate 200 so as to penetrate a part of the semiconductor substrate 200 along the thickness direction of the semiconductor substrate 200, and a material consisting of an oxide film or a metal film embedded in the trench.

[0110] Next, the upper side in Figure 12B, that is, the side of the semiconductor substrate 200 where light is incident, will be described. Above the light incident surface of the semiconductor substrate 200, an on-chip lens 350 into which light is incident is provided. Below the on-chip lens 350 and above the light incident surface of the semiconductor substrate 200, a color filter 330 is provided.

[0111] Furthermore, as shown in Figure 12B, a light-shielding portion 360 is provided on the light incident surface of the semiconductor substrate 200 so as to surround the color filter 330. The light-shielding portion 360 is provided so as to separate adjacent pixels 100, thereby enabling light shielding between adjacent pixels 100. In addition, in this embodiment, for the unit units of a pixel 100b that detects blue light and a pixel 100r that detects red light, a light-shielding portion 360 having a slit 362 is provided between the two pixels 100b and 100r that detect light of the same color.

[0112] As described above, in this embodiment, for the pixel 100b that detects blue light and the pixel 100r that detects red light, a light-shielding portion 360 having a slit 362 is provided between the two pixels 100b and 100r that detect light of the same color. In this way, according to this embodiment, it is possible to improve the sensitivity of the pixels 100b and 100r while suppressing the occurrence of color mixing between the two pixels 100r and 100b that detect light of the same color.

[0113] In this embodiment, the pixel array section 30 is not limited to the configuration shown in Figures 12A and 12B, but can be transformed into various configurations.

[0114] <<10. Eighth Embodiment>> Next, the detailed configuration of the pixel array section 30 according to the eighth embodiment of the present disclosure will be described with reference to Figures 13A and 13B. Figure 13A is an explanatory diagram showing an example of the planar configuration of the pixel array section 30 according to this embodiment. Figure 13B is an explanatory diagram showing an example of the cross-sectional configuration of the pixel array section 30 according to this embodiment, and in detail shows a cross-section obtained by cutting the pixel array section 30 along the line F-F' shown in Figure 13A. Here, the explanation of points common with the seventh embodiment described above will be omitted, and only the differences will be explained.

[0115] As shown in Figure 13A, in this embodiment, in a unit unit of pixels 100g that detect green light, a light-shielding portion 360 having a slit 362 is provided between two pixels 100g that detect light of the same color. More specifically, in the example shown on the left side of Figure 13A, the slit 362 is provided in the center of the light-shielding portion 360 located between two pixels 100g that detect light of the same color. In the example shown on the right side of Figure 13A, in one of the unit units of pixels 100g that detect green light, the slit 362 is provided on the side closer to the center of the light-shielding portion 360 located between two pixels 100g that detect light of the same color. By doing so, the sensitivity of the pixels 100g can be improved in this embodiment.

[0116] Furthermore, in this embodiment, as shown in Figure 13B, the light-shielding portion 360 is provided to separate adjacent pixels 100b and 100r. In addition, in this embodiment, as shown in Figure 13B, a slit 362 is provided in the light-shielding portion 360 that separates adjacent pixels 100g.

[0117] As described above, in this embodiment, in the unit unit of pixels 100g corresponding to green, a light-shielding section 360 having a slit 362 is provided between two pixels 100g that detect light of the same color. By doing so, according to this embodiment, it is possible to improve the sensitivity of the pixels 100g while suppressing the occurrence of color mixing between these pixels 100g.

[0118] In this embodiment, the pixel array section 30 is not limited to the configuration shown in Figures 13A and 13B, but can be transformed into various configurations.

[0119] <<11. Ninth Embodiment>> Next, the detailed configuration of the pixel array section 30 according to the ninth embodiment of the present disclosure will be described with reference to Figures 14A and 14B. Figure 14A is an explanatory diagram showing an example of the planar configuration of the pixel array section 30 according to this embodiment. Figure 14B is an explanatory diagram showing an example of the cross-sectional configuration of the pixel array section 30 according to this embodiment, and in detail shows a cross-section obtained by cutting the pixel array section 30 along the line G-G' shown in Figure 14A. Here, the explanation of points common to the sixth embodiment described above will be omitted, and only the differences will be explained.

[0120] As shown in Figure 14A, in this embodiment, in the unit unit of a pixel 100g that detects green light, the light-shielding portion 360 is provided to separate adjacent pixels 100g. Furthermore, in this embodiment, in the unit units of a pixel 100b that detects blue light and a pixel 100r that detects red light, the light-shielding portion 366 is provided to separate the on-chip lens 350b.

[0121] Furthermore, in this embodiment, as shown in Figure 14B, the light-shielding portion 366, which is provided to separate adjacent pixels 100b and 100r, is narrower in width than the light-shielding portion 360, which is provided to separate adjacent pixels 100g. According to this embodiment, by doing so, it is possible to improve the sensitivity of pixels 100b and 100r while suppressing the occurrence of color mixing between adjacent pixels 100b and 100r that detect light of the same color.

[0122] In this embodiment, the pixel array section 30 is not limited to the configuration shown in Figures 14A and 14B, but can be transformed into various configurations.

[0123] <<12. Tenth Embodiment>> Next, with reference to Figure 15, the detailed configuration of the pixel array section 30 according to the tenth embodiment of the present disclosure will be described. Figure 15 is an explanatory diagram showing an example of the cross-sectional configuration of the pixel array section 30 according to this embodiment, and more specifically, it shows a cross-section obtained by cutting the pixel array section 30 along the line G-G' shown in Figure 14A. Here, the explanation of points common to the sixth embodiment described above will be omitted, and only the differences will be explained.

[0124] In this embodiment, as shown in Figure 15, the light-shielding portion 366, which is provided to separate adjacent pixels 100b and 100r, is lower in height than the light-shielding portion 360, which is provided to separate adjacent pixels 100g. According to this embodiment, by doing so, it is possible to improve the sensitivity of pixels 100b and 100r while suppressing the occurrence of color mixing between adjacent pixels 100b and 100r that detect light of the same color.

[0125] In this embodiment, the pixel array section 30 is not limited to the configuration shown in Figure 15, but can be transformed into various configurations.

[0126] <<13. Eleventh Embodiment>> Next, with reference to Figure 16, the detailed configuration of the pixel array section 30 according to the eleventh embodiment of the present disclosure will be described. Figure 16 is an explanatory diagram showing an example of the cross-sectional configuration of the pixel array section 30 according to this embodiment, and more specifically, it shows a cross-section obtained by cutting the pixel array section 30 along the line G-G' shown in Figure 14A. Here, the points that are common with the sixth embodiment described above will be omitted from the explanation, and only the differences will be described.

[0127] In each embodiment of the present disclosure described so far, the pixel 100 had a pixel isolation wall 220 that surrounded and demarcated the pixel region within the semiconductor substrate 200. Furthermore, in these embodiments, the pixel isolation wall 220 was provided so as to penetrate a portion of the semiconductor substrate 200 along the thickness direction of the semiconductor substrate 200.

[0128] On the other hand, in this embodiment, as shown in Figure 16, a pixel separation wall 220 is provided on the semiconductor substrate 200 between adjacent pixels 100g to separate these pixels 100g, but no pixel separation wall 220 is provided on the semiconductor substrate 200 between adjacent pixels 100b and 100r. According to this embodiment, the sensitivity of pixels 100b and 100r can be improved by doing so. In this embodiment, as shown in Figure 16, it is preferable that the light-shielding portion 360 has a grid-like pattern that separates the adjacent pixels 100b, 100g, and 100r.

[0129] In this embodiment, the pixel array section 30 is not limited to the configuration shown in Figure 16, but can be transformed into various configurations.

[0130] <<14. Summary>> As described above, each embodiment of the present disclosure makes it possible to improve the sensitivity of the pixel 100.

[0131] In the embodiments of this disclosure described above, a pixel 100 was described in which the first conductivity type is N-type, the second conductivity type is P-type, and electrons are used as the signal charge. However, embodiments of this disclosure are not limited to such examples. For example, this embodiment can be applied to a pixel 100 in which the first conductivity type is P-type, the second conductivity type is N-type, and holes are used as the signal charge.

[0132] Furthermore, although the embodiments of this disclosure described above have been applied to a back-illuminated CMOS (Complementary MOS) image sensor structure, the embodiments of this disclosure are not limited thereto and may also be applied to a front-illuminated CMOS image sensor structure.

[0133] Furthermore, the imaging device 10 according to the embodiment of this disclosure is not limited to an imaging device that detects the distribution of the amount of incident visible light and captures it as an image. For example, this embodiment can be applied to imaging devices (physical quantity distribution detection devices) such as imaging devices that capture the distribution of incident amounts of infrared rays, X-rays, or particles as an image, distance measuring devices that receive reflected infrared light, and fingerprint detection sensors that detect the distribution of other physical quantities such as pressure and capacitance and capture it as an image.

[0134] Furthermore, in this embodiment, the imaging device 10 can be manufactured using methods, apparatus, and conditions commonly used in the manufacture of semiconductor devices. In other words, in this embodiment, existing semiconductor device manufacturing processes can be used.

[0135] Examples of the methods mentioned above include the PVD (Physical Vapor Deposition) method, the CVD (Chemical Vapor Deposition) method, and the ALD (Atomic Layer Deposition) method. Examples of PVD methods include vacuum deposition, electron beam (EB) deposition, various sputtering methods (magnetron sputtering, RF (Radio Frequency)-DC (Direct Current) coupled bias sputtering, ECR (Electron Cyclotron Resonance) sputtering, counter-target sputtering, high-frequency sputtering, etc.), ion plating, laser ablation, molecular beam epitaxy (MBE (Molecular Beam Epitaxy)), and laser transfer. Examples of CVD methods include plasma CVD, thermal CVD, metal-organic (MO) CVD, and optical CVD. Furthermore, other methods include electrolytic plating, electroless plating, spin coating, immersion, casting, microcontact printing, drop casting, various printing methods such as screen printing, inkjet printing, offset printing, gravure printing, and flexographic printing, as well as stamping, spraying, air doctor coater, blade coater, rod coater, knife coater, squeeze coater, reverse roll coater, transfer roll coater, gravure coater, kiss coater, cast coater, spray coater, slit orifice coater, and calender coater. In addition, patterning methods include chemical etching such as shadow masking, laser transfer, and photolithography, as well as physical etching using ultraviolet light or lasers. Furthermore, planarization techniques include CMP (Chemical Mechanical Polishing), laser planarization, and reflow.

[0136] <<15. Application Examples>> <15.1 Application Example to Cameras> The technology relating to this disclosure (this technology) can be applied to a variety of other products. For example, the technology relating to this disclosure may be applied to cameras, etc. With reference to Figure 17, an example of the configuration of a camera 700 as an electronic device to which this technology is applied will be described. Figure 17 is an explanatory diagram showing an example of a schematic functional configuration of a camera 700 to which the technology relating to this disclosure (this technology) can be applied.

[0137] As shown in Figure 17, the camera 700 includes an imaging device 702, an optical lens 710, a shutter mechanism 712, a drive circuit unit 714, and a signal processing circuit unit 716. The optical lens 710 forms an image of the subject (incident light) onto the imaging surface of the imaging device 702. As a result, signal charges are accumulated in the pixels 100 of the imaging device 702 for a certain period of time. The shutter mechanism 712 controls the light irradiation period and light shielding period for the imaging device 702 by opening and closing. The drive circuit unit 714 supplies drive signals to control the signal transfer operation of the imaging device 702 and the shutter operation of the shutter mechanism 712. That is, the imaging device 702 performs signal transfer based on the drive signals (timing signals) supplied from the drive circuit unit 714. The signal processing circuit unit 716 performs various signal processing. For example, the signal processing circuit unit 716 outputs the processed video signal to a storage medium such as memory (not shown) or to a display unit (not shown). The imaging device 702 may be configured to include an imaging device 10 to which the technology of this disclosure (this technology) can be applied.

[0138] <15.2 Example of Application to Smartphones> For example, the technology relating to this disclosure may be applied to smartphones, etc. Therefore, with reference to Figure 18, an example of the configuration of a smartphone 900 as an electronic device to which this technology is applied will be described. Figure 18 is a block diagram showing an example of a schematic functional configuration of a smartphone 900 to which the technology relating to this disclosure (this technology) may be applied.

[0139] As shown in Figure 18, the smartphone 900 includes a CPU (Central Processing Unit) 901, a ROM (Read Only Memory) 902, and a RAM (Random Access Memory) 903. The smartphone 900 also includes a storage device 904, a communication module 905, and a sensor module 907. Furthermore, the smartphone 900 includes an imaging device 909, a display device 910, a speaker 911, a microphone 912, an input device 913, and a bus 914. The smartphone 900 may also have a processing circuit such as a DSP (Digital Signal Processor) instead of, or together with, the CPU 901.

[0140] The CPU 901 functions as an arithmetic processing unit and control unit, controlling all or part of the operation of the smartphone 900 according to various programs recorded in the ROM 902, RAM 903, or storage device 904. The ROM 902 stores programs and calculation parameters used by the CPU 901. The RAM 903 temporarily stores programs used in the execution of the CPU 901 and parameters that change as appropriate during its execution. The CPU 901, ROM 902, and RAM 903 are interconnected by a bus 914. The storage device 904 is a data storage device configured as an example of the storage unit of the smartphone 900. The storage device 904 is composed of, for example, a magnetic storage device such as an HDD (Hard Disk Drive), a semiconductor storage device, or an optical storage device. This storage device 904 stores programs executed by the CPU 901, various data, and various data acquired from external sources.

[0141] The communication module 905 is a communication interface composed of, for example, a communication device for connecting to the communication network 906. The communication module 905 may be, for example, a communication card for wired or wireless LAN (Local Area Network), Bluetooth®, or WUSB (Wireless USB). Alternatively, the communication module 905 may be a router for optical communication, a router for ADSL (Asymmetric Digital Subscriber Line), or a modem for various types of communication. The communication module 905 transmits and receives signals, etc., to and from the Internet or other communication devices using a predetermined protocol such as TCP (Transmission Control Protocol) / IP (Internet Protocol). Furthermore, the communication network 906 connected to the communication module 905 is a network connected by wire or wireless means, such as the Internet, a home LAN, infrared communication, or satellite communication.

[0142] The sensor module 907 includes various sensors, such as motion sensors (e.g., acceleration sensors, gyroscopes, geomagnetic sensors, etc.), biometric information sensors (e.g., pulse sensors, blood pressure sensors, fingerprint sensors, etc.), or position sensors (e.g., GNSS (Global Navigation Satellite System) receivers, etc.).

[0143] The imaging device 909 is provided on the surface of the smartphone 900 and can image objects located on the back or front side of the smartphone 900. More specifically, the imaging device 909 may be configured to include an imaging device 10 to which the technology of this disclosure (this technology) can be applied. Furthermore, the imaging device 909 may further have an optical system mechanism (not shown) composed of an imaging lens, a zoom lens, and a focus lens, etc., and a drive system mechanism (not shown) that controls the operation of the optical system mechanism. The image sensor collects incident light from the object as an optical image, and the signal processing circuit converts the formed optical image into an optical image on a pixel-by-pixel basis, reads out the signal from each pixel as an imaging signal, and performs image processing to acquire an image.

[0144] The display device 910 is provided on the surface of the smartphone 900 and can be, for example, an LCD (Liquid Crystal Display) or an organic EL (Electroluminescence) display. The display device 910 can display an operation screen or captured images acquired by the imaging device 909 described above.

[0145] The speaker 911 can output, for example, call audio or audio associated with video content displayed by the display device 910 described above, to the user.

[0146] The microphone 912 can, for example, pick up the user's voice during a call, voices including commands to activate functions of the smartphone 900, and sounds from the surrounding environment of the smartphone 900.

[0147] The input device 913 is a device operated by the user, such as a button, keyboard, touch panel, or mouse. The input device 913 includes an input control circuit that generates an input signal based on information entered by the user and outputs it to the CPU 901. By operating this input device 913, the user can input various types of data to the smartphone 900 or instruct it to perform processing operations.

[0148] The above shows an example configuration of the smartphone 900. Each of the above components may be made up of general-purpose materials, or it may be made up of hardware specialized for the function of each component. Such a configuration can be appropriately changed depending on the technological level at the time of implementation.

[0149] <<16. Supplement>> Although preferred embodiments of the present disclosure have been described in detail with reference to the attached drawings, the technical scope of the present disclosure is not limited to such examples. It is clear that a person with ordinary skill in the art of the present disclosure may conceive of various modifications or alterations within the scope of the technical ideas described in the claims, and these will naturally also be understood to fall within the technical scope of the present disclosure.

[0150] Furthermore, the effects described herein are merely descriptive or illustrative and not limiting. In other words, the technology relating to this disclosure may produce other effects that are obvious to those skilled in the art from the description herein, in addition to or in lieu of the effects described herein.

[0151] Furthermore, this technology can also take the following configurations: (1) A light detection device comprising: a pixel array portion including a plurality of pixels arranged in row and column directions on a semiconductor substrate; and a grid-like light-shielding grid pattern that separates the pixels and is provided on the pixel array portion and is composed of a plurality of first light-shielding members provided between adjacent pixels, wherein the pixel array portion includes a plurality of unit units consisting of a predetermined number of adjacent pixels, and within at least one of the unit units, the first light-shielding members constituting the light-shielding grid pattern are not provided between adjacent pixels. (2) The light detection device according to (1) above, wherein the first pixels are pixels on which one on-chip lens is provided for each first pixel, and the second pixels are pixels on which one on-chip lens is provided for each plurality of second pixels, and in the unit unit consisting of a predetermined number of second pixels, the first light-shielding members are not provided between adjacent second pixels. (3) The light detection device according to (2) above, wherein in the unit unit consisting of the plurality of first pixels, the first light-shielding member is not provided between adjacent first pixels. (4) The light detection device according to (2) or (3) above, wherein in the unit unit, the plurality of pixels are arranged in two columns and two rows. (5) The light detection device according to (4) above, wherein in the unit unit consisting of the plurality of second pixels, the on-chip lens is provided for each of the plurality of second pixels arranged in two rows and one column. (6) The light detection device according to (4) above, wherein in the unit unit consisting of the plurality of second pixels, the on-chip lens is provided for each of the plurality of second pixels arranged in one row and two columns. (7) The light detection device according to (6) above, wherein in the unit unit consisting of the plurality of second pixels, the length of the on-chip lens extending in the row direction is shorter than the length of the unit unit extending in the row direction.(8) The photodetector according to (6) or (7) above, wherein in the unit unit consisting of a plurality of second pixels, the length of the on-chip lens extending in the column direction is shorter than the length of the second pixels extending in the column direction. (9) The photodetector according to (7) above, wherein in the unit unit consisting of a plurality of first pixels, the length of the on-chip lens extending in the row direction is longer than the length of the first pixels extending in the row direction. (10) The photodetector according to (8) above, wherein in the unit unit consisting of a plurality of first pixels, the length of the on-chip lens extending in the column direction is longer than the length of the first pixels extending in the column direction. (11) The photodetector according to any one of (7) to (10) above, wherein the on-chip lens has a tapered shape that widens from the on-chip lens side toward the semiconductor substrate side in a cross-section cut along the film thickness direction of the semiconductor substrate. (12) The light detection device according to (1) above, wherein in at least one of the unit units, a second light-shielding member is provided between adjacent pixels, and the second light-shielding member has lower light-shielding properties than the first light-shielding member. (13) The light detection device according to (12) above, wherein the first pixels are pixels on which one on-chip lens is provided for each of the first pixels, and the second pixels are pixels on which one on-chip lens is provided for each of the plurality of second pixels, and in the unit unit consisting of a predetermined number of second pixels, the second light-shielding member is provided in part between adjacent second pixels. (14) The light detection device according to (13) above, wherein in the unit unit consisting of a predetermined number of second pixels, the second light-shielding member is provided so as to separate adjacent on-chip lenses when viewed from above the semiconductor substrate. (15) The light detection device according to any one of (12) to (14) above, wherein the second light-shielding member has a slit. (16) The light detection device according to any one of (12) to (14) above, wherein the width of the second light-shielding member is narrower than that of the first light-shielding member.(17) The light detection device according to any one of (12) to (14) above, wherein the height of the second light-shielding member is lower than that of the first light-shielding member. (18) The light detection device according to any one of (12) to (14) above, wherein the second light-shielding member is made of a material with lower light-shielding properties than that of the first light-shielding member. (19) The light detection device according to (2) or (13) above, wherein the first pixel is a pixel that detects green light, and the second pixel is a pixel that detects red light and green light. (20) Electronic device equipped with a light detection device, the light detection device comprising: a pixel array portion including a plurality of pixels arranged in row and column directions on a semiconductor substrate; a grid-like light-shielding grid pattern provided on the pixel array portion and comprising a plurality of first light-shielding members provided between adjacent pixels, wherein the pixel array portion includes a plurality of unit units consisting of a predetermined number of adjacent pixels, and within at least one of the unit units, the first light-shielding members constituting the light-shielding grid pattern are not provided between adjacent pixels.

[0152] 10, 702, 909 Imaging device 30, 30a Pixel array section 32 Vertical drive circuit section 34 Column signal processing circuit section 36 Horizontal drive circuit section 38 Output circuit section 40 Control circuit section 42 Pixel drive wiring 44 Vertical signal line 46 Horizontal signal line 48 Input / output terminals 100, 100a, 100b, 100g, 100r Pixel 200 Semiconductor substrate 210 Photoelectric conversion section 220 Pixel separation wall 320 Light-shielding film 330, 330b, 330g, 330r Color filter 350, 350a, 350b On-chip lens 360, 364, 366 Light-shielding section 362 Slit 700 Camera 710 Optical lens 712 Shutter mechanism 714 Drive circuit unit 716 Signal processing circuit unit 900 Smartphone 901 CPU 902 ROM 903 RAM 904 Storage device 905 Communication module 906 Communication network 907 Sensor module 910 Display device 911 Speaker 912 Microphone 913 Input device 914 Bus

Claims

1. A light detection device comprising: a pixel array portion including a plurality of pixels arranged in row and column directions on a semiconductor substrate; and a grid-like light-shielding grid pattern provided on the pixel array portion and comprising a plurality of first light-shielding members provided between adjacent pixels, wherein the pixel array portion includes a plurality of unit units consisting of a predetermined number of adjacent pixels, and within at least one of the unit units, the first light-shielding members constituting the light-shielding grid pattern are not provided between adjacent pixels.

2. The light detection device according to claim 1, wherein the first pixel is a pixel on which one on-chip lens is provided for each first pixel, and the second pixel is a pixel on which one on-chip lens is provided for each of a plurality of second pixels, and in the unit unit consisting of a predetermined number of second pixels, the first light-shielding member is not provided between adjacent second pixels.

3. The light detection device according to claim 2, wherein in the unit unit consisting of a plurality of first pixels, the first light-shielding member is not provided between adjacent first pixels.

4. The light detection device according to claim 2, wherein the plurality of pixels are arranged in two columns and two rows within the unit.

5. The light detection device according to claim 4, wherein in the unit unit consisting of a plurality of second pixels, the on-chip lens is provided for each of the plurality of second pixels arranged in two rows and one column.

6. The light detection device according to claim 4, wherein in the unit unit consisting of a plurality of second pixels, the on-chip lens is provided for each of the plurality of second pixels arranged in a 1x2 grid.

7. In the unit unit comprising a plurality of second pixels, the length of the on-chip lens extending in the row direction is shorter than the length of the unit unit extending in the row direction, as described in claim 6.

8. In the unit unit consisting of a plurality of second pixels, the length of the on-chip lens extending in the column direction is shorter than the length of the second pixels extending in the column direction, as described in claim 6.

9. In the unit unit consisting of a plurality of first pixels, the length of the on-chip lens extending in the row direction is longer than the length of the first pixel extending in the row direction, as described in claim 7.

10. In the unit unit consisting of a plurality of first pixels, the length of the on-chip lens extending in the column direction is longer than the length of the first pixels extending in the column direction, as described in claim 8.

11. The photodetector according to claim 7, wherein the on-chip lens has a tapered shape that widens from the on-chip lens side toward the semiconductor substrate side in a cross-section cut along the film thickness direction of the semiconductor substrate.

12. The light detection device according to claim 1, wherein within at least one of the unit units, a second light-shielding member is provided between adjacent pixels, and the second light-shielding member has lower light-shielding properties than the first light-shielding member.

13. The light detection device according to claim 12, wherein the first pixel is a pixel on which one on-chip lens is provided for each first pixel, the second pixel is a pixel on which one on-chip lens is provided for each of a plurality of second pixels, and in the unit unit consisting of a predetermined number of second pixels, the second light-shielding member is provided in part between adjacent second pixels.

14. The light detection device according to claim 13, wherein in the unit unit consisting of a predetermined number of second pixels, the second light-shielding member is provided so as to separate adjacent on-chip lenses when viewed from above the semiconductor substrate.

15. The light detection device according to claim 12, wherein the second light-shielding member has a slit.

16. The light detection device according to claim 12, wherein the width of the second light-shielding member is narrower than that of the first light-shielding member.

17. The light detection device according to claim 12, wherein the height of the second light-shielding member is lower than that of the first light-shielding member.

18. The light detection device according to claim 12, wherein the second light-shielding member is made of a material with lower light-shielding properties than the first light-shielding member.

19. The light detection device according to claim 2, wherein the first pixel is a pixel that detects green light, and the second pixel is a pixel that detects red light and green light.

20. Electronic device equipped with a light detection device, wherein the light detection device comprises: a pixel array portion including a plurality of pixels arranged in row and column directions on a semiconductor substrate; and a grid-like light-shielding grid pattern provided on the pixel array portion and comprising a plurality of first light-shielding members provided between adjacent pixels, wherein the pixel array portion includes a plurality of unit units consisting of a predetermined number of adjacent pixels, and within at least one of the unit units, the first light-shielding members constituting the light-shielding grid pattern are not provided between adjacent pixels.

Images