Method and system for controlling dead time of power unit, and power unit, converter, storage medium, electronic device and computer program product
Patent Information
- Authority / Receiving Office
- WO · WO
- Patent Type
- Applications
- Current Assignee / Owner
- Filing Date
- 2025-12-22
- Publication Date
- 2026-08-13
Smart Images

Figure CN2025144364_13082026_PF_FP_ABST
Abstract
Description
Control methods and systems for dead time of power units, power units, converters, storage media, electronic equipment and computer program products. Technical Field
[0001] This application relates to the technical field of power devices, and more specifically, to a method and system for controlling the dead time of a power unit, a power unit, an inverter, a storage medium, an electronic device, and a computer program product. Background Technology
[0002] In power electronics applications, power units are commonly used in inverters, frequency converters, and multilevel cascaded power electronic devices. The bridge arm circuits within a power unit can convert and control electrical energy. The power semiconductor devices contained in the bridge arm circuits serve functions such as protecting components in the circuit, converting electrical energy, and regulating current and voltage.
[0003] However, if both switches in the bridge arm of a bridge arm circuit are turned on simultaneously, the current in the power unit will suddenly increase, potentially damaging the power semiconductor device. To address this issue, existing technologies use a dead time to prevent the two switches in the bridge arm circuit from turning on simultaneously. Dead time refers to the time period inserted into the control pulse signal of the power semiconductor device. Dead time ensures that a pair of switches in the bridge arm will not turn on at the same time during adjacent switching.
[0004] The inventors of this application have discovered that the dead time of power semiconductor devices is currently typically controlled using a fixed-time control method. However, in actual operation, if the dead time is set too large, it will cause a delay in the switching operation of the power semiconductor device. If the dead time is set too small, a pair of switching transistors in the bridge arm may still conduct at the same time during adjacent switching, which may lead to damage to the power semiconductor device.
[0005] The content in the background section is merely technology known to the public and does not necessarily represent existing technology in this field. Summary of the Invention
[0006] This application provides a method and system for controlling the dead time of a power unit, a power unit, an inverter, a storage medium, an electronic device, and a computer program product to solve at least one of the above-mentioned technical problems.
[0007] According to one aspect of this application, a method for controlling the dead time of a power unit is provided. The power unit includes a power semiconductor device module and a drive module. The control method includes acquiring the current value of the power unit; determining the turn-off time of the power semiconductor device module based on the current value and a preset relationship table, the preset relationship table including a correspondence between the determined current value and the turn-off time based on the type of the power semiconductor device module; determining the dead time of the power semiconductor device module based on the turn-off time; and determining a drive pulse for the drive module based on the dead time, so that the drive pulse controls the power semiconductor device module to achieve the dead time.
[0008] According to another aspect of this application, a control system for the dead time of a power unit is provided. The control system is used to execute any control method of this application. The power unit includes a power semiconductor device module and a drive module. The control system includes a current acquisition module, a dead time calculation module, and a dead time control module. The current acquisition module acquires the current value of the power unit. The dead time calculation module determines the turn-off time of the power semiconductor device module based on the current value and a preset relationship table. The preset relationship table includes a correspondence between the determined current value and the turn-off time based on the type of the power semiconductor device module. The dead time calculation module determines the dead time of the power semiconductor device module based on the turn-off time. The dead time control module determines the drive pulse of the drive module based on the dead time, so that the drive pulse controls the power semiconductor device module to achieve the dead time.
[0009] According to another aspect of this application, a power unit is provided. The power unit includes a power semiconductor device module and a drive module. The power unit also includes the aforementioned control system.
[0010] According to another aspect of this application, a converter is provided. The converter includes one or more converter chains. Each converter chain includes at least two of the aforementioned power units. The at least two of the aforementioned power units are cascaded.
[0011] According to another aspect of this application, a non-volatile computer-readable storage medium is provided on which a computer program is stored. When the computer program is executed by a processor, it implements the control method of this application.
[0012] According to another aspect of this application, an electronic device is provided. The electronic device includes one or more processors and a storage device. The storage device is used to store one or more programs. When the one or more programs are executed by the one or more processors, the one or more processors implement the control method of this application.
[0013] According to another aspect of this application, a computer program product is provided, including a computer program stored on a computer-readable storage medium. The computer program includes program instructions. When the program instructions are executed by a computer, the computer performs the control method of this application.
[0014] Beneficial effects.
[0015] The control method provided in this application determines the turn-off time of the power semiconductor device module based on the current value of the power unit, determines the dead time of the power semiconductor device module based on the turn-off time, and updates the dead time to the drive pulse so that the drive pulse controls the power semiconductor device module to achieve the dead time. The control method provided in this application enables the dead time of the power semiconductor device module to be automatically updated according to the current value of the power unit, reducing the probability of a current short circuit caused by the simultaneous conduction of two power switches in the bridge arm of the power semiconductor device module, thereby improving the stability of the device or system containing the power unit. Attached Figure Description
[0016] To more clearly illustrate the technical solutions in the embodiments of this application, the accompanying drawings used in the description of the embodiments will be briefly introduced below. Obviously, the accompanying drawings described below are only some embodiments of this application. For those skilled in the art, other drawings can be obtained based on these drawings without creative effort.
[0017] Figure 1 shows a flowchart illustrating the power unit dead time control method according to an embodiment of this application;
[0018] Figure 2 shows another schematic flowchart of the power unit dead time control method according to an embodiment of this application;
[0019] Figure 3 shows another schematic flowchart of the power unit dead time control method according to an embodiment of this application;
[0020] Figure 4 shows another schematic flowchart of the power unit dead time control method according to an embodiment of this application;
[0021] Figure 5 shows another schematic flowchart of the power unit dead time control method according to an embodiment of this application;
[0022] Figure 6 shows a schematic diagram of the power unit structure according to an embodiment of this application;
[0023] Figure 7 shows a schematic diagram of a full-bridge circuit for the power semiconductor device module in an embodiment of this application;
[0024] Figure 8 shows a schematic diagram of a power semiconductor device module as a half-bridge circuit in an embodiment of this application;
[0025] Figure 9 shows a schematic diagram of the converter chain in an embodiment of this application;
[0026] Figure 10 shows a schematic diagram of the star-shaped converter according to an embodiment of this application;
[0027] Figure 11 shows a schematic diagram of the angled converter according to an embodiment of this application;
[0028] Figure 12 shows a schematic diagram of the structure of a three-phase half-bridge converter according to an embodiment of this application;
[0029] Figure 13 shows a schematic diagram of the control system according to an embodiment of this application.
[0030] Explanation of reference numerals in the attached figures:
[0031] Power unit 1; converter chain 2; star converter 3; delta converter 4; three-phase half-bridge converter 5; control system 11; current acquisition module 111; dead time calculation module 112; dead time control module 113; drive module 12; power semiconductor device module 13. Embodiments of the present invention
[0032] Exemplary embodiments will now be described more fully with reference to the accompanying drawings. However, these exemplary embodiments can be implemented in many forms and should not be construed as limited to the embodiments set forth herein; rather, they are provided so that this application will be thorough and complete, and will fully convey the concept of the exemplary embodiments to those skilled in the art. The same reference numerals in the drawings denote the same or similar parts, and therefore repeated descriptions of them will be omitted.
[0033] The described features, structures, or characteristics can be combined in any suitable manner in one or more embodiments. Numerous specific details are provided in the following description to give a full understanding of embodiments of this disclosure. However, those skilled in the art will recognize that the technical solutions of this disclosure can be practiced without one or more of these specific details, or other methods, components, materials, devices, etc. In these cases, well-known structures, methods, devices, implementations, materials, or operations will not be shown or described in detail.
[0034] Furthermore, the terms “comprising” and “having”, and any variations thereof, are intended to cover non-exclusive inclusion. For example, a process, method, system, product, or apparatus that includes a series of steps or units is not limited to the steps or units listed, but may optionally include steps or units not listed, or may optionally include other steps or units inherent to such process, method, product, or apparatus.
[0035] The terms "first," "second," etc., in the specification, claims, and accompanying drawings of this application are used to distinguish different objects, not to describe a specific order.
[0036] The technical solutions of this application will be clearly and completely described below with reference to the accompanying drawings of the embodiments. Obviously, the described embodiments are only some, not all, of the embodiments of this application. All other embodiments obtained by those skilled in the art based on the embodiments of this application without creative effort are within the scope of protection of this application.
[0037] The present application will be described in detail below with reference to the accompanying drawings.
[0038] According to one aspect of this application, a power unit is provided. FIG6 shows a schematic diagram of the structure of the power unit according to an embodiment of this application. As shown in FIG6, the power unit 1 includes a control system 11, a drive module 12, and a power semiconductor device module 13. The control system 11 includes a current acquisition module 111, a dead time calculation module 112, and a dead time control module 113.
[0039] According to another aspect of this application, this application provides a method for controlling the dead time of a power unit.
[0040] For example, dead time is a time interval set in a bridge circuit to prevent the power switches of the upper and lower bridge arms from turning on or off simultaneously. The dead time is set to avoid short circuits between the upper and lower bridge arms and to reduce the transient voltage and current surges caused by cross-conduction of the power switches.
[0041] Figure 1 shows a flowchart of a power unit dead time control method according to an embodiment of this application.
[0042] As shown in Figure 1, the control method includes steps S100-S400. Exemplarily, the control method is executed by the control system 11.
[0043] According to the example embodiment, in step S100, the control system 11 acquires the current value of the power unit 1.
[0044] Optionally, the current value of power unit 1 can be the actual current value of power unit 1 collected by current acquisition module 111.
[0045] For example, the current acquisition module 111 can be set at the output terminal of the power unit 1 to measure the actual current value of the power unit 1 in real time.
[0046] Optionally, the current value of power unit 1 can be a preset current value set by an external control module.
[0047] For example, the external control module can be a higher-level control unit of the control system 11. The external control module controls the current value of the power unit 1 by sending a current control command signal to the power control unit 1 through the current acquisition module 111. The current control command signal may include the preset current value.
[0048] Optionally, the current value of power unit 1 can also be obtained by weighted averaging or root mean square calculation of the preset current value set by the external control module at the same time and the actual current value of power unit 1.
[0049] For example, the formula for calculating the weighted average is as follows:
[0050]
[0051] Where I is the current value of power unit 1, I i W is the preset current value set by the external control module or the actual current value of power unit 1 at the same time. i The weight value of the preset current value set for the external control module or the weight value of the actual current value of power unit 1.
[0052] For example, the formula for calculating the root mean square is as follows:
[0053]
[0054] Where I is the current value of power unit 1, Ii is the preset current value set by the external control module at the same time or the actual current value of power unit 1, and N is the total number of current values. As an example embodiment, N can be 2. That is, the root mean square calculation is performed on the preset current value and the actual current value.
[0055] According to the example embodiment, in step S200, the control system 11 determines the turn-off time of the power semiconductor device module 13 based on the current value and a preset relationship table.
[0056] For example, the preset relationship table can be a table showing the correspondence between the current value and the turn-off time determined based on the type of power semiconductor device module 13.
[0057] For example, as shown in FIG7, the power semiconductor device module 13 can be a full-bridge circuit composed of a DC capacitor C1 and power semiconductor devices Q1-Q4. As shown in FIG8, the power semiconductor device module 13 can also be a half-bridge circuit composed of a DC capacitor C2 and power semiconductor devices Q5 and Q6.
[0058] The turn-off time of the power semiconductor device module 13 refers to the time required for the power semiconductor devices contained in the power semiconductor device module 13 to go from the on state to complete turn-off. Factors affecting the turn-off time of the power semiconductor device module 13 may include the type of power semiconductor device, the magnitude of the current flowing through the power semiconductor device, and the operating temperature of the power semiconductor device. The preset relationship table is a table showing the correspondence between current values and turn-off times determined according to the type of power semiconductor device in the power semiconductor device module 13.
[0059] For example, taking an IGBT (Insulated Gate Bipolar Transistor) with a rated voltage of 4500V and a rated current of 5000A as an example, the preset relationship table can be shown in Table (1) based on the experimental data. Wherein, I is the current value of power unit 1. This is the turn-off time of the power semiconductor device module 13.
[0060] Table (1)
[0061]
[0062] According to an example embodiment, in step S300, the control system 11 determines the dead time of the power semiconductor device module 13 based on the turn-off time. Exemplarily, This refers to the dead time of the power semiconductor device module 13. It can be longer than the shutdown time. ,For example, , where K can be a value greater than 1.
[0063] As an example, for instance, K=1.8, taking Table (1) as an example, when I=1000A, =6us, =10.8us.
[0064] According to the example embodiment, in step S400, the control system 11 determines the drive pulse of the drive module 12 based on the dead time, so that the drive pulse controls the power semiconductor device module 13 to achieve the dead time.
[0065] For example, the driving pulse can be a PWM pulse.
[0066] Determining the drive pulse of the drive module 12 based on the dead time may include updating the dead time into the PWM pulse to control the power semiconductor device module 13 to implement the dead time.
[0067] The technical solution of this application determines the turn-off time of the power semiconductor device module by using the current value of the power unit, and determines the dead time of the power semiconductor device module by using the turn-off time. This dead time is then updated in the drive pulse to enable the drive pulse to control the power semiconductor device module to achieve the dead time. The control method provided by this application allows the dead time of the power semiconductor device module to be automatically updated according to the current value of the power unit, reducing the probability of a current short circuit caused by the simultaneous conduction of two power switches in the bridge arm of the power semiconductor device module, thereby improving the stability of the device or system containing the power unit.
[0068] Figure 2 shows a flowchart of step S100 in an embodiment of this application. As shown in Figure 2, step S100 includes steps S110 and S120.
[0069] In step S110, the control system 11 acquires the actual current value of the power semiconductor device module 13.
[0070] In step S120, the control system 11 determines the current value based on the actual current value.
[0071] According to the above embodiments, this application can use the measured actual current value of the power semiconductor device module 13 as the current value of the power unit 1.
[0072] Figure 3 shows another flowchart of step S100 in an embodiment of this application. As shown in Figure 3, step S100 includes steps S130 and S140.
[0073] In step S130, the control system 11 acquires the preset current value of the power semiconductor device module 13 preset by the external control module.
[0074] For example, the external control module can be a higher-level control unit of the control system 11. The external control module controls the current value of the power unit 1 by sending a current control command signal to the control system 11. The current control command signal contains the preset current value.
[0075] In step S140, the control system 11 determines the current value based on the preset current value.
[0076] For example, the preset current value is used as the current value of power unit 1.
[0077] According to the above embodiment, the preset current value set by the external control module can be used as the current value of power unit 1. This setting allows for the pre-setting of the current value of power unit 1.
[0078] Figure 4 shows another flowchart of step S100 in the above embodiment. As shown in Figure 4, step S100 includes steps S150-S170.
[0079] In step S150, the control system 11 acquires the preset current value of the power semiconductor device module 13 at the first moment, which is preset by the external control module.
[0080] For example, the first moment is the moment when the external control module sends the current control command signal.
[0081] In step S160, the control system 11 acquires the actual current value of the power semiconductor device module 13 at the first moment.
[0082] For example, when the power semiconductor device module 13 operates under the control of the external control module issuing a current control command signal, the operating current is the actual current value of the power semiconductor device module 13 at the first moment. There is a difference between this actual current value and the preset current value.
[0083] In step S170, the control system 11 determines the current value based on the preset current value at the first moment and the actual current value at the first moment.
[0084] For example, the current value can be obtained by weighted averaging or root mean square calculation of the preset current value and the actual current value at the first moment. The weighted averaging or root mean square calculation has been described in detail above and will not be repeated here.
[0085] According to the above embodiment, the current value is obtained by weighted averaging or root mean square calculation of the preset current value and the actual current value at the first moment. This setting can improve the accuracy of the obtained current value.
[0086] Figure 5 shows a flowchart of step S400 in the above embodiment. As shown in Figure 5, step S400 includes steps S410 and S420.
[0087] In step S410, the control system 11 updates the dead time to the drive pulse.
[0088] For example, the driving pulse can be a PWM pulse.
[0089] The drive pulse of the drive module 12 is determined based on the dead time, which can be used to update the dead time into the PWM pulse.
[0090] In step S420, the control system 11 controls the power semiconductor device module 13 to implement the dead time according to the updated drive pulse.
[0091] For example, the updated PWM pulse can be input to the power semiconductor device module 13 to enable the power semiconductor device module 13 to update the dead time.
[0092] According to another aspect of this application, a control system 11 for the dead time of a power unit is also provided. This control system 11 is used to execute the control method described above. As shown in FIG13, the control system 11 includes a current acquisition module 111, a dead time calculation module 112, and a dead time control module 113.
[0093] According to the example embodiment, the current acquisition module 111 can acquire the current value of the power unit 1.
[0094] For example, the current value of power unit 1 can be the actual current value of power unit 1 collected by current acquisition module 111.
[0095] For example, the current acquisition module 111 can be set at the output terminal of the power unit 1 to measure the actual current value of the power unit 1 in real time.
[0096] For example, the current value of power unit 1 can be a preset current value set by an external control module (not shown in the figure). The external control module can be a higher-level control unit of the control system 11. The external control module controls the current value of power unit 1 by sending a current control command signal to the control system 11. The current control command signal contains the preset current value.
[0097] For example, the current value of power unit 1 can also be obtained by weighted averaging or root mean square calculation of the preset current value set by the external control module at the same time and the actual current value of power unit 1.
[0098] The formula for calculating the weighted average is as follows:
[0099]
[0100] Where I is the current value of power unit 1, I i W is the preset current value set by the external control module or the actual current value of power unit 1 at the same time. i The weight value of the preset current value set for the external control module or the weight value of the actual current value of power unit 1.
[0101] The formula for calculating the root mean square is as follows:
[0102]
[0103] Where I is the current value of power unit 1, Ii is the preset current value set by the external control module at the same time or the actual current value of power unit 1, and N is the total number of current values, where N is 2. That is, the root mean square calculation is performed on the preset current value and the actual current value.
[0104] According to the example embodiment, the dead time calculation module 112 can determine the turn-off time of the power semiconductor device module 13 based on the current value and a preset relationship table. The preset relationship table includes the correspondence between the current value and the turn-off time determined based on the type of the power semiconductor device module 13. The dead time calculation module 112 can determine the dead time of the power semiconductor device module 13 based on the turn-off time.
[0105] For example, the power semiconductor device module 13 may be of the type IGBT, MOSFET (Metal-Oxide-Semiconductor Field-Effect Transistor), IGCT (Integrated Gate Commutated Thyristors) or GTO (Gate Turn-Off Thyristor).
[0106] For example, the turn-off time of power semiconductor device module 13 refers to the time required for the power semiconductor devices contained in power semiconductor device module 13 to go from the on state to complete turn-off. Factors affecting the turn-off time of power semiconductor device module 13 may include the type of power semiconductor device, the magnitude of the current flowing through the power semiconductor device, and the operating temperature of the power semiconductor device. The preset relationship table is a table showing the correspondence between current values and turn-off times determined according to the type of power semiconductor devices in power semiconductor device module 13.
[0107] According to the example embodiment, the dead time control module 113 can determine the drive pulse of the drive module 12 based on the dead time, so that the drive pulse controls the power semiconductor device module 13 to achieve the dead time.
[0108] For example, the driving pulse can be a PWM pulse.
[0109] The drive pulse of the drive module 12 is determined based on the dead time, which can be used to update the dead time into the PWM pulse in order to control the power semiconductor device module 13 to realize the dead time.
[0110] According to the above embodiment, the control system determines the turn-off time of the power semiconductor device module based on the current value of the power unit, determines the dead time of the power semiconductor device module based on the turn-off time, and updates the dead time to the drive pulse so that the drive pulse controls the power semiconductor device module to achieve the dead time. This control method enables the dead time of the power semiconductor device module to be automatically updated according to the current value of the power unit, reducing the probability of a current short circuit caused by two switches being turned on simultaneously, thereby improving the stability of the device or system containing the power unit.
[0111] According to another aspect of this application, a converter is also provided. The converter includes one or more converter chains. Each converter chain includes at least two of the aforementioned power units 1. The at least two of the aforementioned power units 1 are cascaded.
[0112] For example, as shown in Figure 9, the converter chain 2 can be composed of three power units 1 cascaded together.
[0113] When the converter consists of three converter chains 2, it can be a star-shaped converter 3 as shown in Figure 10. Here, A, B, and C are connected to phase A, phase B, and phase C, respectively. The converter can also be a delta-shaped converter 4 as shown in Figure 11. Here, A, B, and C are connected to phase A, phase B, and phase C, respectively.
[0114] When the converter consists of 6 converter chains 2, the converter can be a three-phase half-bridge converter 5 as shown in Figure 12. Among them, A, B and C are connected to phase A, phase B and phase C respectively.
[0115] According to another aspect of this application, a non-volatile computer-readable storage medium is provided on which a computer program is stored. When the computer program is executed by a processor, it implements the control method described above.
[0116] According to another aspect of this application, an electronic device is provided. The electronic device includes one or more processors and a storage device. The storage device is used to store one or more programs. When the one or more programs are executed by the one or more processors, the one or more processors implement the control method described above.
[0117] According to another aspect of this application, a computer program product is provided, including a computer program stored on a computer-readable storage medium. The computer program includes program instructions. When the program instructions are executed by a computer, the computer performs the control method described above.
[0118] In the 1990s, improvements to a technology could be clearly distinguished as either hardware improvements (e.g., improvements to the circuit structure of diodes, transistors, switches, etc.) or software improvements (improvements to the methodology). However, with technological advancements, many improvements to the methodology today can be considered direct improvements to the hardware circuit structure. Designers almost always obtain the corresponding hardware circuit structure by programming the improved methodology into the hardware circuit. Therefore, it cannot be said that an improvement to the methodology cannot be implemented using hardware physical modules.
[0119] For example, a Programmable Logic Device (PLD) (such as a Field Programmable Gate Array (FPGA)) is an integrated circuit whose logic function is determined by the user programming the device. Designers program a digital system onto a PLD themselves, eliminating the need for chip manufacturers to design and fabricate dedicated integrated circuit chips. Furthermore, instead of manually fabricating integrated circuit chips, this programming is now mostly implemented using "logic compiler" software, similar to the software compiler used in program development. The source code before compilation must be written in a specific programming language called a Hardware Description Language (HDL). There are many HDLs, such as ABEL (Advanced Boolean Expression Language), AHDL (Altera Hardware Description Language), Confluence, CUPL (Cornell University Programming Language), HDCal, JHDL (Java Hardware Description Language), Lava, Lola, MyHDL, PALASM, and RHDL (Ruby Hardware Description Language). Among languages, the most commonly used are VHDL (Very-High-Speed Integrated Circuit Hardware Description Language) and Verilog. Those skilled in the art should also understand that by simply performing some logic programming on the method flow using one of these hardware description languages and then programming it into an integrated circuit, the hardware circuit implementing the logic method flow can be easily obtained.
[0120] The controller can be implemented in any suitable manner. For example, the controller can take the form of a microprocessor or processor and a computer-readable medium storing computer-readable program code (e.g., software or firmware) that can be executed by the (micro)processor, logic gates, switches, application-specific integrated circuits (ASICs), programmable logic controllers, and embedded microcontrollers. Examples of controllers include, but are not limited to, the following microcontrollers: ARC625D, Atmel AT91SAM, Microchip PIC18F26K20, and Silicon Labs C8051F320. The memory controller can also be implemented as part of the control logic of the memory.
[0121] Those skilled in the art will also know that, besides implementing the controller in the form of purely computer-readable program code, the same functions can be achieved by logically programming the method steps, making the controller take the form of logic gates, switches, application-specific integrated circuits (ASICs), programmable logic controllers (PLCs), and embedded microcontrollers. Therefore, such a controller can be considered a hardware component, and the devices included within it for implementing various functions can also be considered structures within the hardware component. Alternatively, the devices for implementing various functions can be considered as both software modules implementing the method and structures within the hardware component.
[0122] The systems, devices, modules, or units described in the above embodiments can be implemented by computer chips or entities, or by products with certain functions. A typical implementation device is a computer. Specifically, a computer can be, for example, a personal computer, laptop computer, cellular phone, camera phone, smartphone, personal digital assistant, media player, navigation device, email device, game console, tablet computer, wearable device, or any combination of these devices.
[0123] For ease of description, the above system is described by dividing it into functional units. Of course, in implementing this specification, the functions of each unit can be implemented in one or more software and / or hardware components.
[0124] Those skilled in the art will understand that embodiments of this application can provide methods, systems, or computer program products. Therefore, this application can take the form of a completely hardware embodiment, a completely software embodiment, or an embodiment combining software and hardware aspects. Furthermore, this application can take the form of a computer program product embodied on one or more computer-usable storage media (including, but not limited to, disk storage, CD-ROM, optical storage, etc.) containing computer-usable program code.
[0125] This application is described with reference to flowchart illustrations and / or block diagrams of methods, systems (apparatus), and computer program products according to embodiments of this application. It will be understood that each block of the flowchart illustrations and / or block diagrams, as well as combinations of blocks in the flowchart illustrations and / or block diagrams, can be implemented by computer program instructions. These computer program instructions can be provided to a processor of a general-purpose computer, special-purpose computer, embedded processor, or other programmable data processing apparatus to produce a machine, such that the instructions, which execute via the processor of the computer or other programmable data processing apparatus, create means for implementing the functions specified in one or more blocks of the flowchart illustrations and / or one or more blocks of the block diagrams.
[0126] These computer program instructions may also be stored in a computer-readable storage medium that can direct a computer or other programmable data processing device to function in a particular manner, such that the instructions stored in the computer-readable storage medium produce an article of manufacture including instruction means that implement the functions specified in one or more flowcharts and / or one or more block diagrams.
[0127] These computer program instructions may also be loaded onto a computer or other programmable data processing apparatus to cause a series of operational steps to be performed on the computer or other programmable apparatus to produce a computer-implemented process, such that the instructions, which execute on the computer or other programmable apparatus, provide steps for implementing the functions specified in one or more flowcharts and / or one or more block diagrams.
[0128] In a typical configuration, a computing device includes one or more processors (CPU), input / output interfaces, network interfaces, and memory.
[0129] Memory can take the form of non-persistent storage in computer-readable media, random access memory (RAM), and / or non-volatile memory such as read-only memory (ROM) or flash RAM. Memory is an example of computer-readable media.
[0130] Computer-readable media, including both permanent and non-permanent, removable and non-removable media, can store information using any method or technology. Information can be computer-readable instructions, data structures, program modules, or other data. Examples of computer storage media include, but are not limited to, phase-change memory (PRAM), static random access memory (SRAM), dynamic random access memory (DRAM), other types of random access memory (RAM), read-only memory (ROM), electrically erasable programmable read-only memory (EEPROM), flash memory or other memory technologies, and optical disc read-only memory (CD). ROM, digital multifunction optical disc (DVD) or other optical storage, magnetic cassette tape, magnetic disk storage or other magnetic storage devices or any other non-transferable medium, may be used to store information that can be accessed by a computing device. As defined herein, computer-readable media does not include transient media such as modulated data signals and carrier waves.
[0131] It should also be noted that the terms "comprising," "including," or any other variations thereof are intended to cover non-exclusive inclusion, such that a process, method, article, or apparatus that comprises a list of elements includes not only those elements but also other elements not expressly listed, or elements inherent to such a process, method, article, or apparatus. Without further limitation, an element defined by the phrase "comprising one..." does not exclude the presence of other identical elements in the process, method, article, or apparatus that includes said element.
[0132] This specification can be described in the general context of computer-executable instructions that are executed by a computer, such as program modules. Generally, program modules include routines, programs, objects, components, data structures, etc., that perform a specific task or implement a specific abstract data type. This specification can also be practiced in distributed computing environments, where tasks are performed by remote processing devices connected via a communication network. In distributed computing environments, program modules can reside in local and remote computer storage media, including storage devices.
[0133] Finally, it should be noted that the above description is merely a preferred embodiment of this application and is not intended to limit this application. Although this application has been described in detail with reference to the foregoing embodiments, those skilled in the art can still modify the technical solutions of the foregoing embodiments or make equivalent substitutions for some of the technical features. Any modifications, equivalent substitutions, improvements, etc., made within the spirit and principles of this application should be included within the protection scope of this application.
Claims
1. A method for controlling the dead time of a power unit, characterized in that, The power unit includes a power semiconductor device module and a drive module, and the control method includes: Obtain the current value of the power unit; The turn-off time of the power semiconductor device module is determined based on the current value and a preset relationship table, wherein the preset relationship table includes the correspondence between the current value and the turn-off time determined based on the type of the power semiconductor device module. The dead time of the power semiconductor device module is determined based on the shutdown time; The drive pulse of the drive module is determined based on the dead time, so that the drive pulse controls the power semiconductor device module to achieve the dead time.
2. The control method according to claim 1, characterized in that, The process of obtaining the current value of the power unit includes: Collect the actual current value of the power semiconductor device module; The current value is determined based on the actual current value.
3. The control method according to claim 1, characterized in that, The process of obtaining the current value of the power unit includes: Obtain the preset current value of the power semiconductor device module preset by the external control module; The current value is determined based on the preset current value.
4. The control method according to claim 1, characterized in that, The process of obtaining the current value of the power unit includes: Obtain the preset current value of the power semiconductor device module at the first moment, as preset by the external control module; Collect the actual current value of the power semiconductor device module at the first moment; The current value is determined based on the preset current value at the first moment and the actual current value at the first moment.
5. The control method according to claim 1, characterized in that, The step of determining the drive pulse of the drive module based on the dead time, so that the drive pulse controls the power semiconductor device module to achieve the dead time, includes: Update the dead time to the drive pulse; The power semiconductor device module is controlled according to the updated drive pulse to achieve the dead time.
6. A control system for the dead time of a power unit, characterized in that, The control system is used to execute the control method according to any one of claims 1-5, the power unit includes a power semiconductor device module and a drive module, and the control system includes: The current acquisition module acquires the current value of the power unit; The dead time calculation module determines the turn-off time of the power semiconductor device module based on the current value and a preset relationship table. The preset relationship table includes the correspondence between the current value and the turn-off time determined based on the type of the power semiconductor device module. The dead time of the power semiconductor device module is determined based on the turn-off time. The dead time control module determines the drive pulse of the drive module based on the dead time, so that the drive pulse controls the power semiconductor device module to achieve the dead time.
7. A power unit, comprising a power semiconductor device module and a drive module, characterized in that, It also includes the control system as described in claim 6.
8. A converter, characterized in that, It includes one or more converter chains, the converter chain comprising at least two power units as described in claim 7, the at least two power units as described in claim 7 being cascaded.
9. A non-volatile computer-readable storage medium having a computer program stored thereon, characterized in that, When the computer program is executed by a processor, it implements the methods described in claims 1-5. Any of the control methods described herein.
10. An electronic device, characterized in that, include: One or more processors; Storage device for storing one or more programs; When the one or more programs are executed by the one or more processors, the one or more processors implement the control method as described in any one of claims 1-5.
11. A computer program product, characterized in that, It includes a computer program stored on a computer-readable storage medium, the computer program including program instructions that, when executed by a computer, cause the computer to perform the control method as described in any one of claims 1-5.