UV irradiation unit, UV reactor, and method for producing a UV irradiation unit

Abstract

The invention relates to a UV irradiation unit (10), comprising a device (15) for generating electromagnetic radiation (30) with a wavelength of less than 500 nm, a lens (17), and a detector element (18). The detector element has a photodiode (107) which is formed in a semiconductor substrate (100) having a first main surface (101) and a converter layer (110) arranged above the first main surface (101). The converter layer (110) is designed to convert electromagnetic radiation (30) with a first wavelength of less than 500 nm into electromagnetic radiation with a second wavelength greater than the first wavelength. The detector element further comprises an optical bandpass filter (115) which is designed to block electromagnetic radiation with a wavelength greater than 380 nm, wherein the optical bandpass filter (115) is arranged on a side of the converter layer (110) facing away from the semiconductor substrate (100). The device (15) for generating electromagnetic radiation (30) and the detector element (18) are arranged on a planar surface (109) of the lens (17). The lens (17) is designed to direct a portion of the radiation (30) emitted by the device (15) for generating electromagnetic radiation to the detector element (18).

Description

[0001] 2024PF01413 1

[0002] UV RADIATION UNIT, UV RECTOR AND METHOD FOR MANUFACTURING A UV RADIATION UNIT

[0003] DESCRIPTION

[0004] UV reactors used for irradiating media, for example for disinfecting water or air, have UV light sources capable of generating electromagnetic radiation in the UV range, particularly in the UV-C range. Generally, concepts are being sought for monitoring these UV light sources.

[0005] The present invention is based on the objective of providing an improved UV irradiation unit, an improved UV reactor and an improved method for manufacturing a UV irradiation unit.

[0006] According to the implementation forms, the problem is solved by the subject matter of the independent patent claims. Further developments are defined in the dependent patent claims.

[0007] According to the embodiments, a UV irradiation unit comprises a device for generating electromagnetic radiation with a wavelength less than 500 nm, a lens, and a detector element. The detector element has a photodiode formed in a semiconductor substrate with a first main surface representing a light-incidence surface, and a converter layer arranged above the first main surface. The converter layer is configured to convert electromagnetic radiation with a first wavelength less than 500 nm into electromagnetic radiation with a second wavelength greater than the first wavelength. The detector element further comprises an optical bandpass filter configured to absorb electromagnetic radiation with a second wavelength greater than the first.

[0008] To block radiation with a wavelength greater than 380 nm, the optical bandpass filter is arranged on a side of the converter layer facing away from the semiconductor substrate. The electromagnetic radiation generation device and the detector element are arranged on a planar surface of the lens, and the lens is configured to direct some of the radiation emitted by the electromagnetic radiation generation device to the detector element.

[0009] For example, the UV irradiation unit further comprises a UV reflection layer arranged between the converter layer and the substrate, wherein the UV reflection layer is configured to reflect electromagnetic radiation with a wavelength less than 500 nm to the converter layer.

[0010] For example, the device for emitting electromagnetic radiation can be connected to the planar surface of the lens via an inorganic bonding layer.

[0011] According to the implementation forms, the converter layer has quantum dots.

[0012] The optical bandpass filter can be configured to reflect electromagnetic radiation with a wavelength greater than 420 nm to the converter layer.

[0013] The UV irradiation unit may further include a UV-transparent filter configured to reflect electromagnetic radiation with a wavelength greater than 420 nm to the converter layer, the UV-transparent filter being arranged between the bandpass filter and the converter layer. 2024PF01413 3

[0014] The UV irradiation unit may also have a dielectric layer adjacent to the first main surface. For example, the dielectric layer may be a silicon nitride layer.

[0015] A UV reactor comprises a reactor housing and a central element extending along a longitudinal axis of the reactor. The UV reactor further includes a UV irradiation unit as described above, which is arranged on the central element, the UV irradiation unit being configured to emit a portion of the generated UV radiation into an interior space of the reactor housing.

[0016] The UV reactor may, for example, have an additional detector element that is located on an inner wall of the reactor housing and is designed to detect electromagnetic radiation emitted by the UV irradiation unit.

[0017] A method for manufacturing a UV irradiation unit comprises attaching a device for generating electromagnetic radiation with a wavelength less than 500 nm to a planar surface of a lens, and forming a detector element on the planar surface of the lens adjacent to the device for generating electromagnetic radiation. The detector element comprises a photodiode formed in a semiconductor substrate having a first main surface that is a light-incidence surface, and a converter layer arranged above the first main surface, the converter layer being configured to convert electromagnetic radiation with a first wavelength less than 500 nm into a second wavelength greater than 500 nm.

[0018] to convert the first wavelength. The detector element further comprises an optical bandpass filter configured to block electromagnetic radiation with a wavelength greater than 380 nm, the optical bandpass filter being located on a side of the converter layer facing away from the semiconductor substrate. The lens is configured to direct a portion of the radiation emitted by the electromagnetic radiation-generating device to the detector element.

[0019] For example, forming the detector element can involve attaching a converter layer stack to the planar surface via a bonding material. Subsequently, a support to which the electromagnetic radiation generation device and the photodiode are attached can be joined with the lens, the converter layer stack being integrated with the photodiode.

[0020] According to further embodiments, the device for generating electromagnetic radiation and the detector element can be arranged on a carrier and subsequently the carrier can be joined with the planar surface of the lens.

[0021] The accompanying drawings serve to illustrate exemplary embodiments of the invention. The drawings depict these embodiments and, together with the description, explain them. Further exemplary embodiments and many of the intended advantages will become apparent from the detailed description below. The elements and structures shown in the drawings are not necessarily drawn to scale. Identical reference numerals refer to identical or corresponding elements and structures. 2024PF01413 5

[0022] Fig. 1A shows a cross-sectional view of a UV irradiation unit according to design forms.

[0023] Fig. 1B and IC show cross-sectional views of a detector element that is part of the UV irradiation unit, according to the design forms.

[0024] Figures 2A to 2D illustrate a method for manufacturing a UV irradiation unit according to the design forms.

[0025] Fig. 3 shows a schematic top view of a UV irradiation unit according to the design forms.

[0026] Figures 4A and 4B illustrate a method for manufacturing a UV irradiation unit according to further embodiments.

[0027] Fig. 5 shows a cross-sectional view of a UV irradiation unit according to further embodiments.

[0028] Fig. 6 shows a schematic cross-sectional view of a UV reactor according to the design forms.

[0029] The following detailed description refers to the accompanying drawings, which form part of the disclosure and show specific embodiments for illustrative purposes. In this context, directional terminology such as "top," "bottom," "front," "back," "over," "on," "in front," "behind," "front," "back," etc., refers to the orientation of the figures just described. Since the components of the embodiments can be positioned in different orientations, the directional terminology serves only for explanation and is in no way restrictive. 2024PF01413 6

[0030] The description of the embodiments is not restrictive, as other embodiments exist and structural or logical modifications can be made without deviating from the scope defined by the claims. In particular, elements of the embodiments described below can be combined with elements of other described embodiments, unless otherwise indicated by the context.

[0031] The terms "lateral" and "horizontal," as used in this description, are intended to describe an orientation or alignment that is essentially parallel to a first surface of a substrate or semiconductor body. This could be, for example, the surface of a wafer or a chip (die).

[0032] The horizontal direction can, for example, lie in a plane perpendicular to a growth direction when layers are growing.

[0033] The term "vertical," as used in this description, is intended to describe an orientation that is essentially perpendicular to the first surface of a substrate or semiconductor body. The vertical direction can, for example, correspond to a growth direction when growing layers.

[0034] Fig. 1A shows a schematic cross-sectional view of a UV irradiation unit 10 according to embodiments. The UV irradiation unit 10 comprises a device 15 for generating electromagnetic radiation 30 with a wavelength of less than 500 nm. The UV irradiation unit 10 further comprises a lens 17 and a detector element 18, which

[0035] Photodiode 107 is featured. A more detailed structure of the detector element 18 is explained below with reference to Fig. 1B and IC.

[0036] The photodiode 107 is formed in a semiconductor substrate with a first main surface, which is a light-incidence surface. The detector element 18 further comprises a converter layer 110 arranged above the first main surface. The converter layer 110 is configured to convert electromagnetic radiation with a first wavelength less than 500 nm into electromagnetic radiation with a second wavelength greater than the first wavelength, for example, greater than 500 nm. In addition, the detector element 18 includes an optical bandpass filter 115, which is configured to block electromagnetic radiation with a wavelength greater than 380 nm. The optical bandpass filter 115 is arranged on a side of the converter layer 110 facing away from the semiconductor substrate. The electromagnetic radiation-generating device 15 20 and the detector element 18 are arranged on a planar surface 109 of the lens 17.The lens 17 is designed to direct part of the radiation 30 emitted by the device 15 for generating electromagnetic radiation to the detector element 18.

[0037] The described setup makes it possible for the detector element 18 to detect electromagnetic radiation 30 emitted by the device 15 for generating electromagnetic radiation. For example, the UV irradiation unit 10 can further include a measuring device 134 that is electrically connected to the photodiode 107. The measuring device can determine the intensity of the detected radiation using signals obtained from the photodiode 107. In this way, at-2024PF01413 8

[0038] For example, it may be determined that the device 15 emitting electromagnetic radiation 30 is emitting limited or no longer emitting electromagnetic radiation and should, for example, be replaced. Furthermore, the measuring device 134 can detect other conspicuous signals (temperature, current, voltage, luminous flux). Accordingly, the monitoring of the function of the device 15 emitting electromagnetic radiation can be greatly improved and carried out continuously.

[0039] Furthermore, the UV irradiation unit 10 can have a voltage source 133 by which the device 15 can be operated for generating electromagnetic radiation.

[0040] Due to its special design, the detector element 18 is configured to detect electromagnetic radiation in the UV range, i.e., with wavelengths below 500 nm, using a photodiode. Accordingly, the detector element 18 can be manufactured cost-effectively and operate efficiently.

[0041] For example, the UV irradiation unit 10 can be mounted on a substrate 12, for example, on a ceramic board with electrical contacts. A first metallization 122 can be applied to a first main surface of the substrate 12. Furthermore, a second metallization 123 can be applied to a second main surface of the substrate 12. The first metallization 122 can be connected to the second metallization via via contacts 124 extending vertically through the substrate 12. For example, the device 15 for generating electromagnetic radiation can be controlled via a first contact element 125 and a second contact element 126. The first contact element 125 and the second contact element 126 can be connected to the voltage source 133.

[0042] The photodiode 107 can be controlled via a first connection area 131 and a second connection area 132 and can also be connected to the measuring device 134. The lens 17 can be made of a material that is transparent to electromagnetic radiation 30 generated by the device 15 for the generation of electromagnetic radiation. For example, the lens 17 can be made of quartz or sapphire (Al₂O₃).

[0043] The device 15 for generating electromagnetic radiation can be configured in any way. According to various embodiments, the device 15 for generating electromagnetic radiation can include an LED (light-emitting diode). For example, the LED can be based on GaN-containing semiconductor materials. The device 15 for generating electromagnetic radiation can, for example, be implemented as a UVC flip chip. According to further embodiments, the device 15 for generating electromagnetic radiation can also be configured differently, for example, using organic semiconductor materials or having a different design.

[0044] The described design with an integrated detector element allows the functionality of the device 15 for the emission of electromagnetic radiation to be continuously monitored during operation. As a result, safe operation of the UV irradiation unit can be ensured at comparatively low cost.

[0045] Fig. 1B shows a schematic cross-sectional view of a detector element 18 according to embodiments. The detector element 18 comprises a photodiode 107 formed in a semiconductor substrate 100. The semiconductor substrate 100 comprises a first main surface 101, which covers a light incidence surface.

[0046] Before the detector element 18 is activated, incident electromagnetic radiation 30 enters the substrate 100 via the first main surface 101. The detector element 18 further comprises a converter layer 110 arranged above the first main surface 101. The converter layer 110 is configured to convert electromagnetic radiation with a first wavelength less than 500 nm into electromagnetic radiation with a second wavelength greater than the first. The detector element 18 further comprises an optical bandpass filter 115 configured to block electromagnetic radiation with a wavelength greater than 380 nm. The optical bandpass filter 115 is arranged on one side of the converter layer 110 facing away from the semiconductor substrate 100.

[0047] For example, the semiconductor substrate 100 can be a silicon substrate. For example, a region 102 of the substrate is doped with dopants of the second conductivity type, for example, p-type. A well region 105 of the first conductivity type, for example, n-type, can be arranged in the substrate region 102 of the second conductivity type. The substrate region 102 of the second conductivity type is directly adjacent to the well region 105 of the first conductivity type. As shown in Fig. 1B, the well region 105 can be directly adjacent to the first main surface 101 of the semiconductor substrate 100. According to further embodiments, other configurations of the first and second substrate regions 105, 102 can also be implemented. The doped well area 105 and the substrate area 102 of the second conductivity type form a photodiode 107.For example, the trough area 105 of the first conductivity type can extend to a depth d of 1 pm or less. 2024PF01413 11.

[0048] According to the implementation forms, the photodiode 107 can also be implemented in any other way.

[0049] For example, a dielectric layer 108 can be arranged over a first main surface 101 of the semiconductor substrate 100. According to further embodiments, the dielectric layer 108 can also be replaced by an air gap. The converter layer 110 is configured to convert electromagnetic radiation with a first wavelength smaller than 500 nm into electromagnetic radiation with a second wavelength larger than the first wavelength. As a result of the conversion of the incident wavelength, the efficiency of the detector element 18 can be increased. The converter layer 110 can contain a phosphor or phosphor material.

[0050] Examples of phosphors include metal oxides, metal halides, metal sulfides, metal nitrides, and others. These compounds can also contain additives that cause the phosphor to emit specific wavelengths. For example, the additives can include rare-earth materials. YAG:Ce is an example of a yellow phosphor. 3+ (with cerium activated yttrium aluminum garnet (Y3A15O) 12 ) ) or (Srx.vBao^Euo.i) SiO4 can be used. Other phosphors can be found on MSiO4: Eu 2+ , in which M can be Ca, Sr, or Ba. By selecting the cations with an appropriate concentration, a desired conversion wavelength can be chosen. Many other examples of suitable phosphors are known.

[0051] Depending on the application, the phosphor material, for example a phosphor powder, can be embedded in a suitable matrix material. For example, the matrix material can be a resin or polymer composition such as a silicone-2024PF01413 12

[0052] or comprise an epoxy resin. The size of the phosphor particles can, for example, be in the micrometer or nanometer range.

[0053] According to further details, the matrix material can comprise a glass. For example, the converter material can be formed by sintering the glass, for example SiO2 with further additives and phosphor powder, forming a phosphor in the glass (PiG).

[0054] According to further explanations, the phosphor material itself can be sintered to form a ceramic. For example, the ceramic phosphor resulting from the sintering process can have a polycrystalline structure.

[0055] According to further explanations, the phosphor material can be grown to form a single-crystal phosphor, for example using the Czochralski (Gz) process.

[0056] According to further specifications, the phosphor material itself can be a semiconductor material that, in its bulk or in layers, exhibits a suitable band gap for absorbing the light emitted by the LED and for emitting the desired conversion wavelength. In particular, this can be an epitaxially grown semiconductor material. For example, the epitaxially grown semiconductor material can have a band gap corresponding to a lower energy than that of the primarily emitted light. Furthermore, several suitable semiconductor layers, each emitting light of a different wavelength, can be stacked on top of each other. One or more quantum wells, quantum dots, or quantum wires can be formed within the semiconductor material. 2024PF01413 13

[0057] According to further implementations, the converter layer can contain 110 quantum dots. More precisely, the phosphor material can be implemented as nanoparticles or microcrystals designed as quantum dots. Quantum dots (QDs, also known as semiconductor nanocrystals) are small crystals of II-VI, III-V, IV-V materials, typically with a diameter of 1 nm to 20 nm, corresponding to the de Broglie wavelength range of the charge carriers. The energy difference of the charge carrier states of a quantum dot is a function of both its composition and physical size. In other words, for a given material, changing the size of the quantum dots can alter the emission spectrum. As a result, a wide range of wavelengths can be generated using quantum dots.

[0058] Typically, quantum dots consist of a core material surrounded by a coating material. The band gap of the semiconductor core material can be smaller than the band gap of the semiconductor coating material. For example, the core can be made of CdSe, and the coating material can comprise CdS as well as, optionally, additional layers. According to other embodiments, the core can be composed of InP, and the coating material comprises ZnS and, optionally, additional layers. According to yet another embodiment, the coating material can be an oxide. Powders made from these quantum dot nanoparticles are commercially available. Essentially, quantum dots can consist of one or more of the following materials: CdS, CdSe, CdTe, CdPo, ZnS, ZnSe, ZnTe, ZnPo, HgS, HgSe, HgTe, MgS, MgSe, MgTe, PbSe, PbS, PbTe, GaN, GaP, GaAs, InP, InAs, CuInS2, CdSi-xSe, BaTiO3, PbZrO3, PbZr x Ti 1-x O3 , Ba xSr 3-x , SrTiO3, LaMnO3, CaMnO3and Lax-xCaxMnO^ .2024PF01413 14

[0059] Quantum dot materials can be applied, for example, by spin coating. For instance, quantum dot materials can be cured in silicone or another suitable matrix material and appear as a yellow powder.

[0060] An optical bandpass filter 115 for the selective transmission of blue light can be arranged on one side of the converter layer 110, facing away from the semiconductor substrate 100. For example, the optical bandpass filter 115 can have a dielectric stack or a sequence of dielectric and metal layers. Accordingly, the optical bandpass filter 115 can be configured as an interference filter. The optical bandpass filter 115 can block electromagnetic radiation with a wavelength greater than, for example, 380 nm. As a result, only UV light is transmitted to the converter layer 110. The optical bandpass filter 115 can also be configured to reflect, for example, electromagnetic radiation with wavelengths greater than 380 nm or 500 nm, which may have been generated within the converter layer 110. In this way, the efficiency of the detector can be further improved.The layer stack applied above the first main surface 101, comprising the converter layer 110 and the optical bandpass filter 115, is hereinafter also referred to as the converter layer stack 119.

[0061] Due to the special setup shown in Fig. 1B, the UV component of the generated electromagnetic radiation 30 is transmitted by the optical bandpass filter 115 and converted into wavelengths larger than the first wavelength. The converted wavelength is then detected by the photodiode 107. Due to the presence of the optical bandpass filter 115, electromagnetic radiation 2024PF01413 15

[0062] with a wavelength greater than 380 nm is reflected. As a result, incident radiation is selectively transmitted by the bandpass filter 115. Furthermore, radiation that has been converted by the converter layer 110 is reflected back to the photodiode 107. Consequently, the efficiency of the detector element 18 is greatly increased. Additionally, the manufacturing costs for the detector element 18 can be reduced.

[0063] Optionally, the detector element 18 can further comprise a UV-transparent filter 116 configured to reflect electromagnetic radiation with a wavelength greater than 380 nm or greater than 420 nm, for example, visible light, to the converter layer 110. The UV-transparent filter 116 can be arranged between the bandpass filter 115 and the converter layer 110. For example, the UV-transparent filter 116 can be configured as a dielectric stack acting as an interference filter.

[0064] For example, the converter layer 110 can function as a scintillator, downconverting UV radiation to either green light with a wavelength of 500 nm to 570 nm, for example, approximately 510 nm, or red light with a wavelength of 620 nm to 770 nm, for example, approximately 630 nm. The downconverted light can be efficiently absorbed by the photodiode 107. For example, the quantum dot material can be cadmium-based. The quantum dots can be custom-designed so that the absorption and emission ranges are clearly separated.

[0065] Fig. IC shows a cross-sectional view of a detector element 18 according to further embodiments. In addition to the elements shown in Fig. 1B, the detector element 182024PF01413 comprises 16

[0066] Furthermore, a UV reflection layer 118 is arranged on one side of the converter layer 110, facing away from the semiconductor substrate 100. Due to the presence of the UV reflection layer 118, UV radiation that has been transmitted and reflected by the converter layer 110 is reflected back to the converter layer 110.

[0067] The detector element 18 can further comprise a layer of a UV-transparent material 121 on one side of the converter layer 110 facing the optical bandpass filter 115. For example, the UV-transparent material can be a polymer such as acrylic or silicone, a ceramic, or glasses such as quartz, fused silica, or specialized UV glass compositions.

[0068] Figures 2A to 2D illustrate cross-sectional views of components during the execution of a method for manufacturing a UV irradiation unit 10 according to embodiments. Over a planar surface 109 of a lens 17 (see Fig.

[0069] 2A) A bonding material 130 is applied to an inorganic, transparent material for UV radiation (Fig. 2B). For example, the lens 17 can be made of sapphire (Al₂O₃). For example, the bonding material 130 can be an inorganic bonding solution suitable, for example, for silicate bonding. According to embodiments, the converter layer stack 119 can be attached to the planar surface 109 of the lens 17 via silicate bonding. For example, the inorganic bonding solution 130 is applied to one of the two elements to be bonded. Under pressure, the adjacent surfaces can be etched by the inorganic bonding solution 130, for example, by surface etching. As a result, the adjacent surfaces then bond firmly together. The result is a strong inorganic bond between the 2024PF01413 17

[0070] Chip / converter layer stack 119 and the lens 17. The solid inorganic bond is, for example, a mixed layer of A12O3 and SiO2.

[0071] As a result, the converter layer stack 119 is attached to the planar surface 109 of the lens 17 (Fig. 2C). The converter layer stack 119 can, for example, contain the layers of the detector element 18 except for the semiconductor substrate 100.

[0072] Furthermore, the device 15 for generating electromagnetic radiation and the semiconductor substrate 100, in which the photodiode 107 is formed, can be attached to a carrier 12 (Fig. 20). For example, a first and a second metallization as well as associated via contacts 124 can already be formed in the carrier. The carrier 12 and the lens 17 are then joined together, for example, by applying pressure. This process can also be carried out via silicate bonding. Any height variations that may occur can be compensated for by flexible elements 135, for example, made of silicone. The UV irradiation unit 10 shown in Fig. 2D can be obtained as a result.

[0073] Fig. 3 shows a schematic top view of the irradiation unit 10. The device 15 for generating electromagnetic radiation and the detector element 18 are arranged above a support 12. The first metallization 122, which may, for example, have a first contact element 125 and a second contact element 126, is also arranged above the support 12. Furthermore, the first metallization may have a first connection area 131 and a second connection area 132, which are arranged above the support 12. The first contact element 125 and the second contact element 126 are located on the support 12.

[0074] The elements 126 are arranged so that they can contact associated contacts of the device 15 for generating electromagnetic radiation. Furthermore, the first connection area 131 and the second connection area 132 are arranged so that they can, for example, contact associated contacts of the photodiode 107 of the detector element 18 in a corresponding manner.

[0075] Figures 4A and 4B illustrate cross-sectional views of components during the execution of a method for manufacturing the UV irradiation unit 10 according to further embodiments. As shown in Figure 4A, a bonding material 130 is arranged over a planar surface 109 of a transparent lens 17. Furthermore, as shown in Figure 4B, the detector element 18, i.e., the photodiode 107, and the converter layer stack 119 are applied over a surface of the support 12. The device 15 for generating electromagnetic radiation is also applied to the support 12. Subsequently, the lens 17 and the support 12 can be assembled such that, for example, the arrangement shown in Figure 2D is obtained.

[0076] Fig. 5 shows a UV irradiation unit 10 according to further embodiments. The UV irradiation unit 10 shown in Fig. 5 has similar or identical components to those shown in Fig. 1A or 2D. The difference here is that an additional connecting wire 127 is provided, with which a terminal of the photodiode 107 can be connected to an associated metallization or to the second connection area 132. According to further embodiments, additional connecting wires may also be provided.

[0077] Fig. 6 shows a schematic cross-sectional view of a UV reactor 20 according to the design forms. The UV reactor 20 comprises 2024PF01413 19

[0078] The UV reactor 20 comprises a reactor housing 159 and a central element 155 extending along a longitudinal axis 153 of the reactor housing 159. The UV reactor 20 further includes a UV irradiation unit 10 arranged on the central element 155. The UV irradiation unit 10 is configured to emit a portion of the generated UV radiation 30 into an interior space 160 of the reactor housing 159. The UV irradiation unit 10 can be configured as described above. For example, a plurality of UV irradiation units 10 can be attached to the central element 155. The central element 155 can, for example, be configured as a rod made of a suitable material on which one or more UV irradiation units are arranged. Furthermore, the central element 155 can be surrounded by a separating element 154, which encloses the rod with the UV irradiation units arranged on it. The separating element 154 can, for example, be transparent to UV radiation.According to further embodiments, the separating element can also be omitted, so that the lens 17 of the UV irradiation unit 10 is directly adjacent to the medium 152 to be irradiated. For example, a detector element 18 and / or a UV irradiation unit 10 can additionally be mounted on the inside of the reactor housing 159. In this way, a detector element 18 mounted on the inside of the reactor housing 159 can detect radiation 30 emitted, for example, by an opposing UV irradiation unit 10 mounted on the central element 155. This makes it possible, for example, to detect the presence of algae or other impurities inside the reactor housing 159.

[0079] A medium to be irradiated 152 can flow through the reactor chamber or the interior 160 of the reactor. For example, the medium to be irradiated can be water or gas, such as ambient air. For example, the zu2024PF01413 20

[0080] The irradiating medium 152 is introduced through an inlet 150 into the interior 160 of the reactor housing 159 and exits the reactor housing 159 via the outlet 151.

[0081] Although specific embodiments have been illustrated and described herein, those skilled in the art will recognize that the specific embodiments shown and described can be replaced by a multitude of alternative and / or equivalent embodiments without departing from the scope of protection of the invention. The application is intended to cover any adaptations or variations of the specific embodiments discussed herein. Therefore, the invention is limited only by the claims and their equivalents. 2024PF01413 21

[0082] REFERENCE MARK LIST

[0083] 10 UV irradiation units

[0084] 12 carriers

[0085] 15 Device for generating electromagnetic radiation 17 Lens

[0086] 18 Detector element

[0087] 20 UV reactors

[0088] 30 UV radiation

[0089] 100 semiconductor substrate

[0090] 101 first main surface

[0091] 102 Substrate area of ​​a second conductivity type

[0092] 105 Tub area of ​​a first conductivity type

[0093] 107 Photodiode

[0094] 108 dielectric layer

[0095] 109 planar surface

[0096] 110 Converter layer

[0097] 115 optical bandpass filter

[0098] 116 UV-transparent filters

[0099] 118 UV reflective layer

[0100] 119 converter layer stacks

[0101] 121 UV-transparent layer

[0102] 122 first metallization

[0103] 123 second metallization

[0104] 124 Via contact

[0105] 125 first contact element

[0106] 126 second contact element

[0107] 127 Connecting wire

[0108] 130 Compound layer

[0109] 131 first connection area

[0110] 132 second connection area

[0111] 133 Voltage source

[0112] 134 Measuring device

[0113] 135 flexible element2024PF01413

[0114] 150 admission

[0115] 151 Outlet

[0116] 152 Medium to be irradiated 153 Longitudinal axis

[0117] 154 Separating element

[0118] 155 central element

[0119] 159 reactor casings

[0120] 160 interior

Claims

2024PF01413 23 REQUIREMENTS 1. UV irradiation unit ( 10 ) , comprising: a device (15) for generating electromagnetic radiation (30) with a wavelength less than 500 nm, a lens (17), and a detector element ( 18 ) which a photodiode ( 107 ) formed in a semiconductor substrate ( 100 ) with a first main surface ( 101 ) which represents a light incidence surface ; a converter layer (110) arranged above the first main surface (101), wherein the converter layer (110) is configured to convert electromagnetic radiation (30) with a first wavelength less than 500 nm into electromagnetic radiation with a second wavelength greater than the first wavelength; and an optical bandpass filter (115) configured to block electromagnetic radiation with a wavelength greater than 380 nm, wherein the optical bandpass filter (115) is arranged on a side of the converter layer (110) facing away from the semiconductor substrate (100), wherein the device (15) for generating electromagnetic radiation (30) and the detector element (18) are arranged on a planar surface (109) of the lens (17) and the lens (17) is configured to direct part of the radiation (30) emitted by the device (15) for generating electromagnetic radiation to the detector element (18).

2. UV irradiation unit (10) according to claim 1, further comprising a UV reflection layer (118) arranged between the converter layer (110) and the substrate (100), wherein the UV reflection layer (118) is configured to be electromagnetically see radiation (30) with a wavelength less than 500 nm to be reflected to the converter layer ( 110).

3. UV irradiation unit ( 10) according to claim 1 or 2, wherein the device ( 15) for emission of electromagnetic radiation (30) is connected to the planar surface ( 109) of the lens ( 17 ) via an inorganic compound layer ( 130 ).

4. UV irradiation unit ( 10) according to one of the preceding claims, wherein the converter layer ( 110) has quantum dots .

5. UV irradiation unit ( 10) according to one of the preceding claims, wherein the optical bandpass filter ( 115) is configured to reflect electromagnetic radiation (30) with a wavelength greater than 420 nm to the converter layer ( 110 .

6. UV irradiation unit (10) according to one of the preceding claims, further comprising a UV-transparent filter (116) which is configured to reflect electromagnetic radiation (30) with a wavelength greater than 420 nm to the converter layer (110), wherein the UV-transparent filter (116) is arranged between the bandpass filter (115) and the converter layer (110).

7. UV irradiation unit ( 10) according to one of the preceding claims, further comprising a dielectric layer ( 108 ) adjacent to the first main surface ( 101 ).

8. UV reactor (20) with a reactor housing (159) and a central element (155) extending along a longitudinal axis (153) of the reactor (20), further comprising a UV-2024PF01413 25 Irradiation unit (10) according to one of the preceding claims, which is arranged on the central element (155), wherein the UV irradiation unit (10) is configured to emit a portion of the generated UV radiation (30) into an interior (160) of the reactor housing (159).

9. UV reactor ( 20 ) according to claim 8, further comprising a further detector element ( 18 ) which is arranged on an inner wall of the reactor housing ( 159 ) and is configured to detect electromagnetic radiation ( 30 ) emitted by the UV irradiation unit ( 10 ).

10. Method for manufacturing a UV irradiation unit ( 10 ) , with Attaching a device (15) for generating electromagnetic radiation (30) with a wavelength less than 500 nm to a planar surface (109) of a lens (17), and Forming a detector element (18) on the planar surface (109) of the lens (17) adjacent to the device (15) for generating electromagnetic radiation (30), wherein the detector element (18) a photodiode ( 107 ) formed in a semiconductor substrate ( 100 ) with a first main surface ( 101 ) which represents a light incidence surface ; a converter layer (110) arranged above the first main surface (101), wherein the converter layer (110) is configured to convert electromagnetic radiation (30) with a first wavelength less than 500 nm into a second wavelength greater than the first wavelength; and an optical bandpass filter (115) configured to block electromagnetic radiation with a wavelength greater than 380 nm, wherein the optical bandpass filter (115) is mounted on a surface separated from the semiconductor substrate (100). The reverse side of the converter layer (110) is arranged, has , wherein the lens ( 17 ) is configured to direct part of the radiation emitted by the device ( 15 ) for generating electromagnetic radiation to the detector element ( 18 ).

11. Method according to claim 10, wherein forming the detector element (18) comprises attaching a converter layer stack (119) to the planar surface (109) via a connecting layer (130) and subsequently joining a carrier (12) to which the device (15) for generating electromagnetic radiation and the photodiode (107) are attached with the lens (17), wherein the converter layer stack (119) is joined with the photodiode (107).

12. Method according to claim 10, wherein the device (15) for generating electromagnetic radiation (30) and the detector element (18) are arranged on a support (12) and subsequently the support (12) is joined with the planar surface (109) of the lens (17).

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