Production of optoelectronic components

Abstract

The invention relates to a method for producing optoelectronic components, comprising providing a structured conversion layer that serves for converting radiation and has a structure of juxtaposed projections that are shaped so as to taper in the direction of an end face, and arranging radiation-emitting semiconductor chips on the conversion layer. A semiconductor chip is arranged on each of the projections. The semiconductor chips have a front side, a rear side opposite the front side and contact elements on the rear side, and are arranged on the conversion layer in such a way that the front sides of the semiconductor chips and the end faces of the projections of the conversion layer face each other. The method further comprises forming a reflective layer on the conversion layer at least in regions laterally from and between the semiconductor chips, and separating the reflective layer and the conversion layer in regions laterally from and between the semiconductor chips in order to form singulated optoelectronic components, each with a semiconductor chip.

Description

[0001] 2024PF01129 1

[0002] MANUFACTURING OF OPTOELECTRONIC COMPONENTS

[0003] DESCRIPTION

[0004] The present invention relates to a method for manufacturing optoelectronic components. The invention further relates to an optoelectronic component and a direct backlighting device.

[0005] This patent application claims priority from German patent application 10 2025 104 258. 6, the disclosure content of which is hereby incorporated by reference.

[0006] A radiation-emitting optoelectronic component, which can be used, for example, in a backlighting device or a vehicle, can comprise a radiation-emitting semiconductor chip and a conversion layer downstream of the semiconductor chip for radiation conversion. The conversion layer allows primary light radiation generated by the semiconductor chip to be at least partially converted. This enables the component to emit light of a desired color, such as white light. Multiple such components can be manufactured together in a single process. This process can encompass mounting radiation-emitting semiconductor chips onto a substrate or circuit board by soldering, creating electrical connections by wire bonding, applying planar conversion layers to the semiconductor chips, and forming package structures.Such a procedure can be complex and expensive.

[0007] The object of the present invention is to provide a solution for an improved fabrication of optoelectronic components, an improved optoelectronic component, and a direct backlighting device comprising several such optoelectronic components. 2024PF01129 2

[0008] This problem is solved by the features of the independent claims. Further advantageous embodiments of the invention are specified in the dependent claims.

[0009] According to one aspect of the invention, a method for manufacturing optoelectronic components is proposed. The method comprises providing a structured conversion layer for radiation conversion. The conversion layer has a structure of adjacent protrusions with a shape tapering towards one end face. The method further involves arranging radiation-emitting semiconductor chips on the conversion layer. One semiconductor chip is placed on each of the protrusions. The semiconductor chips have a front face, a back face opposite the front face, and contact elements on the back face. The semiconductor chips are arranged on the conversion layer such that the front faces of the semiconductor chips and the end faces of the protrusions of the conversion layer face each other.The process further involves forming a reflective layer on the conversion layer, at least in areas to the side of and between the semiconductor chips. It is also provided that the reflective layer and the conversion layer are cut through in areas to the side of and between the semiconductor chips in order to form individual optoelectronic components, each consisting of a single semiconductor chip.

[0010] The proposed method is based on the approach of manufacturing optoelectronic components with a small number or a minimum of different materials and components, as well as a small number or a minimum of manufacturing processes. Process steps such as the provision of the structured conversion layer and the formation of the reflective layer can be performed simultaneously for all components and thus be designed as batch processes. This eliminates processes that are associated with high effort and high costs.

[0011] For example, the use of a conductor frame and steps such as soldering and wire bonding are not employed in this manufacturing process. This method therefore offers the possibility of manufacturing optoelectronic components in a cost-effective and reliable manner.

[0012] A further advantage is that the conversion layer is provided with a three-dimensional structure, in this case the adjacent protrusions, each of which tapers towards one end face. Due to this shape, the conversion layer, together with the reflective layer, can serve as a circumferential reflector structure in the optoelectronic components manufactured using this method. In the radiation mode of the optoelectronic components, where the conversion layer of a component is irradiated by the associated semiconductor chip and radiation emission can occur from the conversion layer, a forward direction of light radiation can consequently be achieved. This allows for improved optical performance compared to a flat conversion layer.

[0013] Further possible details and embodiments are described below, which may be considered for the manufacturing process and the optoelectronic components produced by the process. One or more of the features explained below may be present.

[0014] The steps of the process can be carried out in the order given above, i.e., the arrangement of the semiconductor chips takes place after the provision of the structured conversion layer, the formation of the reflective layer takes place after the arrangement of the semiconductor chips, and the cutting or singulation takes place after the formation of the reflective layer.

[0015] The radiation-emitting semiconductor chips can be LED chips (Light-Emitting Diode). The semiconductor chips can be used for 2024PF01129 4

[0016] The semiconductor chips must be designed to generate primary light radiation. For this purpose, the semiconductor chips can have a sequence of semiconductor layers with an active zone. The primary light radiation can be emitted at least from the front surface of the semiconductor chips. Depending on the design, the primary light radiation can also be emitted from lateral surfaces of the semiconductor chips that extend between the front and back surfaces.

[0017] In the radiation mode of the optoelectronic components manufactured using this method, the conversion layer of a component can convert at least part of the primary light radiation generated by the associated semiconductor chip into one or more secondary light radiations. In this way, a mixed radiation can be generated, which can be emitted by the conversion layer. The primary light radiation can be blue light radiation, which can be converted by the conversion layer into one or more secondary light radiations in the green to red spectral range, thus generating white light radiation.

[0018] The conversion layer can be provided such that the protrusions are spaced apart and arranged side-by-side in a matrix-like pattern of rows and columns. Laterally to and between the protrusions, the conversion layer can have layers with a thickness less than that of the protrusions themselves. The conversion layer can also have two opposing main faces, one of which has the structure with the protrusions, and the other of which is flat. The end faces of the protrusions can be flat or planar faces of the conversion layer. The protrusions can have a truncated pyramid shape or a shape similar to a truncated pyramid. Deviating from an exact geometric truncated pyramid shape, the protrusions can have rounded edges instead of sharp ones. The truncated pyramid-shaped protrusions are shown in Figure 2024PF01129 5.

[0019] The protrusions can have a lateral surface with four faces. The end faces of the protrusions can have a rectangular or square contour, optionally with rounded corners. The semiconductor chips, and thus the front faces of the semiconductor chips that face the end faces of the protrusions when the semiconductor chips are mounted, can also have a rectangular or square contour.

[0020] The conversion layer can consist of a radiolucent base or matrix material and phosphor particles embedded within it. The matrix material can be a silicone material, thus exhibiting high stability against blue primary light radiation. The phosphor particles effect radiation conversion, i.e., the conversion of the primary light radiation into one or more different secondary light radiations, as described above. Accordingly, the phosphor particles can be made of the same material, or different types of phosphor particles made of different materials. Furthermore, the conversion layer can contain additional particles or filler particles embedded in the matrix material. These filler particles can be used to influence or define the mechanical and / or thermal properties of the conversion layer.

[0021] The reflective layer can also comprise a radiolucent matrix or silicone material and particles contained therein, i.e., reflective particles. Furthermore, additional particles or filler particles can be incorporated into the matrix material to influence or define the mechanical and / or thermal properties of the reflective layer. The reflective layer can be formed such that it is present at least in areas lateral to and between the projections of the conversion layer, as well as lateral to and between the semiconductor chips. (See 2024PF01129 6)

[0022] The projections of the conversion layer and the semiconductor chips can be laterally enclosed by the reflective layer. The reflective layer can be formed at least adjacent to the conversion layer, as well as adjacent to the semiconductor chips.

[0023] In another implementation, the preparation of the conversion layer involves shaping the material of the conversion layer by performing a molding process. This molding process, which is a batch process and can also be referred to as a molding process, is carried out using a molding tool. The molding tool serves to shape the material of the conversion layer, which is in a flowable state. This allows the desired shape of the conversion layer, with its structure of protrusions, to be reliably determined.

[0024] The forming process used to provide the conversion layer can be a compression molding process, in which the forming process involves compressing the conversion layer material between two halves of a mold. A stop block tool, also known as an overflow tool, can be used to allow compression to continue until a stop is reached. This allows the thickness of the conversion layer to be precisely and reproducibly determined in the area of ​​the protrusions, as well as laterally and between them.

[0025] In another implementation, the structured conversion layer is formed on a substrate during the forming process. The subsequent steps, i.e., the placement of the semiconductor chips, the formation of the reflective layer, and the cutting process, are performed with the conversion layer already on the substrate. After cutting, the individual optoelectronic components are removed from the substrate. The use of the substrate er-2024PF01129 7

[0026] Ideally, the aforementioned process steps should be handled more easily.

[0027] The auxiliary carrier can be a flexible film. The forming process can be carried out such that the auxiliary carrier and an additional release film are located on opposite halves of a mold used to perform the forming process. The conversion layer material can then be formed or pressed between the mold halves, and thus between the auxiliary carrier and the release film.

[0028] The forming process is carried out in a flowable state of the conversion layer material. The forming tool used can be heated, or heated, which at the end of the forming process causes the conversion layer material, and thus the conversion layer and the forming tool, to harden.

[0029] In another embodiment, the conversion layer provided is a partially cured conversion layer. This conversion layer can comprise a partially cured or partially crosslinked matrix or silicone material containing phosphor particles and, optionally, other particles. In this embodiment as well, the conversion layer with its protrusion structure can be produced using a molding process. The semiconductor chips can then be pressed onto the partially cured conversion layer during assembly.

[0030] In another embodiment, the partially cured conversion layer is arranged on a support substrate. According to the process variant described above, the subsequent steps, i.e., the arrangement of the semiconductor chips, the formation of the reflective layer, and the cutting, are carried out with the conversion layer arranged on the support substrate, and the individual optoelectronic components are removed from the support substrate after cutting.

[0031] fernt . The auxiliary carrier, which can be implemented as a flexible film, also offers the possibility of simplified handling here.

[0032] In another embodiment, after the semiconductor chips are arranged on the partially cured conversion layer, a heating process is carried out to fully cure the conversion layer. This also allows the semiconductor chips to be directly and firmly bonded to the conversion layer. In this embodiment of the process, the use of a fastener for attaching the semiconductor chips to the conversion layer is therefore unnecessary, which facilitates a simple and cost-effective process.

[0033] The support substrate used in the process variants described above can be a flexible film, as indicated above. It is also conceivable to use a UV film that has an adhesive effect, the adhesive effect of which can be reduced or eliminated by irradiation with UV radiation (ultraviolet radiation). UV irradiation of the support substrate, implemented as a UV film, can be carried out after the reflective and conversion layers have been cut through, in order to simplify the removal of the individual optoelectronic components from the support substrate.

[0034] In another embodiment, the semiconductor chips have smaller lateral dimensions than the end faces of the conversion layer projections. The semiconductor chips are arranged on the conversion layer projections such that the end faces of the conversion layer projections protrude laterally from the semiconductor chips. This can apply to the entire circumference of the semiconductor chips. In this way, partial obstruction of the front faces of the semiconductor chips by the reflective layer and the associated impairment of radiation emission from the semiconductor chips can be avoided.

[0035] The arrangement of the semiconductor chips on the protrusions in the aforementioned manner, such that the end faces of the protrusions protrude laterally from the semiconductor chips, can be reliably ensured, due to the smaller lateral dimensions of the semiconductor chips, even in the event of any positioning tolerances.

[0036] To mechanically connect the semiconductor chips to the conversion layer during the assembly process, it is possible to attach the semiconductor chips to the conversion layer using an adhesive. The following procedure can be used.

[0037] In another embodiment, the semiconductor chips are arranged on the conversion layer using a radiolucent adhesive. The adhesive covers the lateral sides of the semiconductor chips, which extend between the front and back surfaces. This is done in such a way that the adhesive on these lateral sides widens towards the conversion layer. The reflective layer is formed adjacent to the adhesive on these lateral sides.

[0038] For arranging the semiconductor chips, individual flowable amounts or drops of the adhesive can be applied to the end faces of the conversion layer protrusions. The semiconductor chips can then be placed on the protrusions and pressed into the adhesive. This allows the adhesive to be located between the end faces of the protrusions and the front faces of the semiconductor chips, and also to laterally surround and wet the semiconductor chips. Due to surface tension, the adhesive may exhibit the aforementioned shape at this point, widening towards the conversion layer. In this area, the adhesive may have a curved and / or oblique surface relative to the lateral sides of the semiconductor chips. After placing the semiconductor chips, 2024PF01129 10

[0039] A heating process is carried out to cure the adhesive. This allows the semiconductor chips to be mechanically bonded firmly to the conversion layer via the adhesive.

[0040] In the aforementioned configuration, not only the conversion layer but also the adhesive, due to its shape widening towards the conversion layer, can serve as a circumferential reflector structure in the manufactured optoelectronic components, together with the reflective layer. During operation of the optoelectronic components, a forward direction of light radiation can therefore also be achieved in the area of ​​the adhesive. This can facilitate the achievement of improved optical functionality.

[0041] The adhesive used may be a silicone adhesive. Such an adhesive may be characterized by high stability against blue primary light radiation.

[0042] In another embodiment, the semiconductor chips are volume-emitting semiconductor chips, also known as volume emitters. In this configuration, the semiconductor chips, and thus the optoelectronic components manufactured using this method, can be produced cost-effectively. The volume-emitting semiconductor chips can emit primary light radiation from the front surface as well as from their lateral surfaces. In this context, the aforementioned configuration with the adhesive can be applied. The laterally emitted primary light radiation can be reflected towards the conversion layer by the reflector structure formed at this point by the adhesive and the reflective layer. This enables a high light yield and thus efficient operation of the optoelectronic components.

[0043] The semiconductor chips designed as volume emitters can be sapphire flip chips. Such semiconductor chips 2024PF01129 11

[0044] can have a sapphire substrate which can form the front and a substantial part of the lateral sides of the semiconductor chips.

[0045] In another embodiment, the rear contact elements of the semiconductor chips have a contact thickness of at least ten micrometers. The contact thickness can, for example, be fifteen micrometers. This can prove advantageous with regard to the formation of the reflective layer.

[0046] In another embodiment, the contact elements of the semiconductor chips have a contact section forming one end of the contact elements, which is formed by electroplating. This allows the aforementioned contact thickness to be reliably achieved. The contact elements can also have flat end faces or a rectangular cross-sectional profile. This can also be advantageous with regard to the formation of the reflective layer.

[0047] In another embodiment, the reflective layer is formed by covering the back surfaces of the semiconductor chips laterally to and between the contact elements with the reflective layer. In this way, the reflective layer prevents radiation emission from the back surface. The resulting optoelectronic components can also possess high mechanical stability and robustness. Such formation of the reflective layer can be facilitated by the aforementioned contact element designs and the procedure described below. The reflective layer can be formed not only adjacent to the back surfaces but also, at least partially, adjacent to the lateral surfaces of the semiconductor chips.

[0048] In another implementation form, the formation of the reflective layer involves carrying out a molding process. The molding process, which here also involves a batch (2024PF01129 12),

[0049] The process is carried out using a mold to shape the material of the reflective layer. This is done while the material of the reflective layer is in a flowable state. The mold can be heated, which at the end of the molding process causes the material of the reflective layer, and thus the reflective layer and the mold, to harden.

[0050] In another embodiment, the forming process used to create the reflective layer is a foil-assisted molding (FAM) process, in which the contact elements of the semiconductor chips, or their ends, are covered with a foil. The foil can be located on one half of the mold and serve as a sealing film to seal the ends or end faces of the contact elements, thus preventing the application of reflective layer material to them. Alternatively, as described above, the reflective layer can be formed on the back sides of the semiconductor chips, laterally to and between the contact elements. The aforementioned sealing effect of the foil in the area of ​​the contact elements and the achievement of back-side coverage of the semiconductor chips with the reflective layer can be achieved through the embodiments described above, i.e.,Contact elements with a contact thickness of at least ten micrometers and an end-side contact section achieved by electroplating are favored.

[0051] In the event that the rear contact elements of the semiconductor chips are covered at their ends with the material of the reflective layer and thus bathed or encapsulated by this material, a process also known as deflashing can be carried out after the forming process. In this process, the reflective layer in the area of ​​the contact elements can be partially removed, thereby exposing the ends of the contact elements of the semiconductor chips. 2024PF01129 13

[0052] The reflective and conversion layers can be cut to separate the optoelectronic components mechanically, for example by sawing. Laser cutting or waterjet cutting are also possible. During cutting, the reflective and conversion layers can be separated into distinct reflective and conversion layers, each corresponding to a specific optoelectronic component.

[0053] The semiconductor chips can have a non-square rectangular geometric top view or a square geometric top view. It may be possible to perform the cutting in such a way that the individual optoelectronic components have a geometric top view similar to that of the semiconductor chips. This allows the optoelectronic components to exhibit a homogeneous color-over-angle distribution.

[0054] According to a further aspect of the invention, an optoelectronic device is proposed. The optoelectronic device has a structured conversion layer for radiation conversion. The conversion layer has a projection with a shape that tapers towards an end face. Another component of the optoelectronic device is a radiation-emitting semiconductor chip connected to the conversion layer. The semiconductor chip has a front face, a back face opposite the front face, and contact elements on the back face. The front face of the semiconductor chip and the end face of the projection of the conversion layer face each other. The optoelectronic device further has a reflective layer which borders at least the conversion layer in a region laterally adjacent to the semiconductor chip. 2024PF01129 14

[0055] The optoelectronic component can be manufactured by carrying out the method described above, or one or more of the implementation variations of the method described above, together with identical components. Therefore, features and details described above with respect to the method can apply accordingly to the optoelectronic component. Likewise, possible features and details described below with respect to the optoelectronic component can also apply to the method.

[0056] The optoelectronic component can be manufactured cost-effectively. The component can be a single-chip device, consisting of only one radiation-emitting semiconductor chip. Similarly, the conversion layer of the component can have only one or a single projection. The component can be a CSP (chip-scale package) device, whose size can be on the order of the size of the semiconductor chip. Furthermore, the component can be implemented without bond wire contacts, thus exhibiting high reliability. The component can also be characterized by efficient operation due to the design of the conversion layer, which tapers towards the end face and thus the front of the semiconductor chip.In this case, the conversion layer, together with the reflective layer, can form a reflector structure of the optoelectronic device, so that a forward direction of light radiation can be achieved during the operation of the optoelectronic device.

[0057] In radiative mode, the optoelectronic component can generate primary light radiation, which can be emitted at least from the front surface of the semiconductor chip. The conversion layer can convert the primary light radiation into one or more secondary light radiations. This allows a mixed radiation to be generated and emitted by the conversion layer. The primary 2024PF01129 15

[0058] Light radiation can be blue. Secondary light radiation can be in the green to red spectral range. Therefore, the light radiation emitted by the optoelectronic component can be white.

[0059] A front face of the optoelectronic component can be formed by the conversion layer or by a side of the conversion layer opposite the front face. A back face of the component, opposite the front face, can be formed by the reflective layer and the semiconductor chip or its contact elements. Lateral faces of the optoelectronic component, extending between the front and back faces, can be formed by the reflective layer and the conversion layer. The reflective layer can border not only the conversion layer but also the semiconductor chip. In this case, the reflective layer can border, at least partially, on lateral faces of the semiconductor chip that extend between the front and back faces.The reflective layer can also be located on the back side of the semiconductor chip, laterally to and between the contact elements, as well as circumferentially around the contact elements. During operation of the optoelectronic component, radiation emission can occur primarily from the front side of the component. The optoelectronic component can have a cuboid shape.

[0060] The conversion layer of the optoelectronic device can, in addition to the projection, have a base section from which the projection can extend towards the semiconductor chip. The base section can protrude laterally relative to the projection, so that the conversion layer has a smaller thickness in the region of the base section laterally to the projection than in the region of the projection. The base section of the conversion layer can form the front face of the optoelectronic device. The base section 2024PF01129 16

[0061] can form a part of the lateral sides of the optoelectronic component at the edge.

[0062] The thickness of the base section of the conversion layer lateral to the protrusion can be minimized. The layer thickness can be in the tens of micrometers range, for example, in a range of twenty-five to sixty micrometers. This ensures that radiation emission from the front of the optoelectronic device is essentially limited to the area where, viewed from above, the semiconductor chip is located.

[0063] In another embodiment, the semiconductor chip has smaller lateral dimensions than the front face of the conversion layer's projection. Furthermore, the semiconductor chip is connected to the conversion layer in such a way that the front face of the projection protrudes laterally from the semiconductor chip. This design prevents the front face of the semiconductor chip from being obscured by the reflective layer, thus promoting efficient operation of the optoelectronic component.

[0064] In another embodiment, the optoelectronic component features a radiolucent adhesive through which the semiconductor chip is bonded to the conversion layer. The adhesive can be located between the end face of the conversion layer's projection and the front face of the semiconductor chip. Furthermore, the adhesive covers the lateral sides of the semiconductor chip, extending between the front and back faces, and in this region, the adhesive widens towards the conversion layer. The reflective layer borders the adhesive present in the region of the semiconductor chip's lateral sides. Thus, the radiolucent adhesive, together with the reflective layer, can also serve as a reflector structure for directing light radiation forward. (See also 2024PF01129 17)

[0065] can promote efficient operation of the optoelectronic component.

[0066] In this context, the semiconductor chip of the optoelectronic component can be a volume-emitting semiconductor chip capable of emitting primary light radiation from its front and lateral sides. The laterally emitted primary light radiation can then be reflected towards the conversion layer by the reflector structure formed at that point by the adhesive and the reflective layer, thus achieving a high light yield.

[0067] It is possible for the semiconductor chip to be bonded directly to the conversion layer without the use of a fastener such as the adhesive described above. This can be achieved by fabricating the chip as described above using a partially cured conversion layer, which is then fully cured after the semiconductor chip(s) have been placed. In this configuration, the reflective layer can be completely adjacent to the lateral sides of the semiconductor chip.

[0068] This optoelectronic component can be used in various fields. One example is the automotive industry. Another suitable application is in backlighting devices.

[0069] In this context, according to a further aspect of the invention, a direct backlighting device for a liquid crystal display is proposed. The backlighting device comprises a carrier and several optoelectronic components arranged side by side on the carrier. The optoelectronic components have the structure described above or a structure according to one or more of the aforementioned embodiments. Similarly, the optoelectronic components can be produced by carrying out the method described above or one or more of the aforementioned embodiments.

[0070] The above-described execution forms of the process must be produced.

[0071] The proposed backlighting device offers the aforementioned advantages, such as efficient operation. Furthermore, the device can be manufactured cost-effectively. During manufacturing, the optoelectronic components can be mounted on the substrate using a pick-and-place process. The substrate can be a printed circuit board (PCB).

[0072] The advantageous embodiments and further developments of the invention described above and / or described in the dependent claims can be used individually or in any combination with each other, except, for example, in cases of clear dependencies or incompatible alternatives.

[0073] The properties, features, and advantages of this invention described above, as well as the manner in which they are achieved, will become clearer and more readily understandable in connection with the following description of exemplary embodiments, which are explained in more detail in conjunction with the schematic drawings. These show:

[0074] Figures 1 and 2 show a side view and a rear view of an optoelectronic component;

[0075] Figures 3 to 10 show the production of optoelectronic components based on side views, which have a structure corresponding to Figures 1 and 2;

[0076] Figures 11 to 13 are corresponding top-down views of conditions during the process of Figures 3 to 10;

[0077] Figure 14 shows a representation of a material property of a conversion layer; 2024PF01129 19

[0078] Figure 15 shows a representation of a material form of a reflective layer;

[0079] Figure 16 shows a representation of a contact element of a semiconductor chip;

[0080] Figure 17 shows a side view of a display device;

[0081] Figure 18 shows a side view of an optoelectronic component according to a further embodiment;

[0082] Figures 19 to 22 show the fabrication of optoelectronic components based on side views, which have a structure corresponding to Figure 18; and

[0083] Figure 23 shows a rear view of an optoelectronic component according to a further embodiment.

[0084] Based on the schematic figures, embodiments of an optoelectronic component 100, a corresponding method for manufacturing several optoelectronic components 100, and a display device 190 comprising a direct backlighting device 191 with several such components 100 are described. It should be noted that the schematic figures cannot be drawn to scale. Therefore, components and structures shown in the figures may be exaggerated in size or reduced in size for better understanding. It should also be noted that features and details mentioned in relation to one embodiment also apply to other embodiments, and that several embodiments and their features can be combined. However, identical features can only be described in detail with respect to one embodiment.Top and rear views sometimes contain section lines that refer to section planes from side views. 2024PF01129 20.

[0085] Figures 1 and 2 show a side view and a rear view of an optoelectronic component 100 according to one possible embodiment. The optoelectronic component 100 comprises a structured conversion layer 121 for radiation conversion, a radiation-emitting semiconductor chip 130 connected to the conversion layer 121, and a reflective layer 141. A further component of the component 100 is a radiation-transparent adhesive 160, through which the semiconductor chip 130 is connected to the conversion layer 121. In the rear view of Figure 2, the adhesive 160 and the reflective layer 141 are omitted or shown as transparent, so that only the conversion layer 121 and the semiconductor chip 130 are visible. This type of representation is also found in other figures, such as Figures 12 and 13.

[0086] The optoelectronic component 100 shown in Figures 1 and 2 has a cuboid shape and comprises a front face 101, a back face 102 opposite the front face 101, and four lateral sides 103 extending between the front face 101 and back face 102. The front face 101 of the component 100 is formed by the conversion layer 121. The lateral sides 103 of the component 100 are formed by the conversion layer 121 and the reflective layer 141. The back face 102 of the component 100 is formed by the reflective layer 141 and the semiconductor chip 130, i.e., the rear contact elements 135 of the semiconductor chip 130. In radiation mode, the optoelectronic component 100 can emit light radiation 182 from the conversion layer 121, and here via the front side 101 or substantially via the front side 101, as indicated by an arrow in Figure 1.Light emission can occur with a Lambertian emission characteristic. If necessary, a small lateral light emission from the conversion layer 121 may also occur in the area of ​​the lateral sides 103 of the component 100. 2024PF01129 21.

[0087] The conversion layer 121 of the optoelectronic device 100 includes, among other things, phosphor particles 221, 222 (see Figure 14), via which radiation conversion can be effected. The conversion layer 121 has a structured shape with two sections 124, 125, i.e., a plate-shaped base section 124 and a projection 125 extending from the base section 124 towards the semiconductor chip 130. To highlight the two sections 124, 125 of the conversion layer 121, a dashed line is shown between the sections 124, 125 in Figure 1. The base section 124 protrudes laterally from the projection 125, so that the conversion layer 121 in the area of ​​the base section 124 laterally to the projection 125 has a smaller layer thickness than in the area of ​​the projection 125.The base section 124 of the conversion layer 121 forms the front face 101 and part of the lateral sides 103 of the optoelectronic device 100.

[0088] The projection 125 of the conversion layer 121 has an end face 126 opposite the front face 101 and a shape that tapers towards the end face 126. The end face 126, which is designed as a flat or planar side of the projection 125, faces the semiconductor chip 130. The end face 126 has a rectangular or square contour, corresponding to the front face 101. The shape of the projection 125 that tapers towards the end face 126 is achieved by the projection 125 having a truncated pyramid shape. The projection 125 has a lateral surface with four faces that run obliquely to the end face 126 and the front face 101. In contrast to the schematic representation of Figures 1 and 2 with the exact geometric truncated pyramid shape, the projection 125 may have rounded edges instead of the sharp edges shown.Similarly, the front face can have 126 rounded corners (not shown) .2024PF01129 22.

[0089] The radiation-emitting semiconductor chip 130 of the optoelectronic device 100 is a light-emitting diode (LED) chip. For radiation generation, the semiconductor chip 130 has a sequence of semiconductor layers (not shown) with an active zone. The semiconductor chip 130 has a rectangular or square outline and comprises a front face 131, a back face 132 opposite the front face 131, and four lateral faces 133 extending between the front face 131 and back face 132. In the optoelectronic device 100, the front face 131 of the semiconductor chip 130 and the end face 126 of the projection 125 of the conversion layer 121 face each other. The contact elements 135 of the semiconductor chip 130, which serve as anode and cathode contacts of the semiconductor chip 130 and via which the semiconductor chip 130 can be contacted and electrically supplied, are located on its back side 132.Instead of the matching shape shown in Figure 2 (and other figures), the contact elements 135 of the semiconductor chip 130 can be implemented with different shapes to enable differentiation.

[0090] The semiconductor chip 130 is implemented as a cost-effective volume emitter. For this purpose, the semiconductor chip 130 can be a sapphire flip chip. In this configuration, the semiconductor chip 130 can have a front-facing, radiation-transmitting sapphire substrate, on the back of which the semiconductor layer sequence with the radiation-generating active zone is provided. The sapphire substrate can form the front face 131 and a substantial part of the lateral sides 133 of the semiconductor chip 130 (not shown).

[0091] The radiation-transparent adhesive 160, by which the semiconductor chip 130 is connected to the conversion layer 121, borders the semiconductor chip 130, the conversion layer 121, and the reflective layer 141. The adhesive 160 is located between the front face 131 of the semiconductor chip 130 and the end face 126 of the projection 125 of the conversion layer 121, and further encloses the half-2024PF01129 23 laterally.

[0092] conductor chip 130, such that the lateral sides 133 of the semiconductor chip 130 are covered with the adhesive 160. The lateral sides 133 can be partially covered with the adhesive 160, as shown in Figure 1. An embodiment not shown is also possible in which the adhesive 160 extends to the back side 132 of the semiconductor chip 130, thus covering the lateral sides 133 (essentially) completely with the adhesive 160. In the region of the lateral sides 133 of the semiconductor chip 130, the adhesive 160 has a shape that widens towards the conversion layer 121. In this region, the adhesive 160 forms a groove around the semiconductor chip 130 with a surface that is curved in cross-section and / or angled relative to the chip sides 133. Figure 1 (and other figures) shows only one variant with an angled surface.

[0093] The reflective layer 141 of the optoelectronic component 100 includes, among other things, reflective particles 241 (see Figure 15), which enable radiation reflection. The reflective layer 141 borders the conversion layer 121 laterally on the semiconductor chip 130, specifically on the base section 124 and the projection 125, as well as on the radiolucent adhesive 160 and the semiconductor chip 130. The projection 125 of the conversion layer 121, the adhesive 160, and the semiconductor chip 130 are laterally enclosed by the reflective layer 141. In the embodiment shown in Figure 1, the reflective layer 141 partially borders the lateral sides 133 of the semiconductor chip 130, as well as the rear side 132 of the semiconductor chip 130 between the contact elements 135, and circumferentially the contact elements 135. Rear ends orThe end faces of the contact elements 135 of the semiconductor chip 130 are not covered with the reflective layer 141, so that the contact elements 135 are accessible for contacting. The reflective layer 141 located on the back of the semiconductor chip 130 prevents rearward radiation emission. 2024PF01129 24.

[0094] The optoelectronic component 100 can also possess high mechanical stability and robustness.

[0095] In the radiation mode of the optoelectronic component 100 shown in Figures 1 and 2, primary light radiation can be generated and emitted by the semiconductor chip 130 (i.e., by its active zone), which can be used to irradiate the conversion layer 121 via the radiolucent adhesive 160. The conversion layer 121 can convert the primary light radiation, at least partially, into one or more secondary light radiations (not shown). In this way, a mixed light radiation 182 can be emitted by the conversion layer 121, as schematically indicated in Figure 1. The primary light radiation generated by the semiconductor chip 130 can be blue light radiation. The primary light radiation can have a dominant wavelength of >430 nm. The secondary light radiation(s) can be light radiation(s) in the green to red spectral range.This allows the light radiation 182 emitted by the optoelectronic component 100 via its conversion layer 121 to be white light radiation.

[0096] The semiconductor chip 130, configured as a volume emitter, can emit primary light radiation via its front surface 131 and additionally via its lateral sides 133. The design of the optoelectronic component 100, with the radiation-transparent adhesive 160 covering the lateral chip sides 133, enables efficient radiation operation. Due to its shape widening towards the conversion layer 121 in this area, the adhesive 160, together with the reflective layer 141, can form a circumferential reflector structure. This structure reflects the primary light radiation emitted laterally by the semiconductor chip 130 forward towards the conversion layer 121 (not shown). This allows for a high light yield. 2024PF01129 25

[0097] The design of the projection 125 of the conversion layer 121, with its tapered shape towards the end face 126 and thus its widening shape towards the front face 101, can also contribute to the efficient operation of the optoelectronic component 100. The conversion layer 121, or rather its projection 125, together with the reflective layer 141, can form a (further) circumferential reflector structure. This allows for forward light radiation to be directed in this area as well. Compared to a flat conversion layer, this can result in improved optical performance.

[0098] Efficient operation of the optoelectronic component 100 can further be facilitated by the fact that the semiconductor chip 130 is smaller in its lateral dimensions than the end face 126 of the projection 125 of the conversion layer 130, and is connected to the conversion layer 121 in such a way that the end face 126 of the projection 121 protrudes laterally from the semiconductor chip 130 relative to its circumference (see Figure 2). In this configuration, there is no partial obstruction of the front face 131 of the semiconductor chip 130 by the reflective layer 141, allowing the primary light radiation generated by the semiconductor chip 130 to reach the conversion layer 121 unimpeded.

[0099] The light radiation 182 generated by the optoelectronic component 100 can, as described above, be emitted essentially via the front surface 101. Furthermore, the radiation emission can be essentially limited to an area in which, viewed from above on the front surface 101, the semiconductor chip 130 is located (not shown). This can be achieved by ensuring that the base section 124 of the conversion layer 121 has the smallest possible thickness laterally to the projection 125. The layer thickness can be in the range of 25 pm to 60 pm. 2024PF01129 26

[0100] The optoelectronic component 100 is characterized not only by its efficient operation but also by its simple structure with a small number of components. Accordingly, the component 100 can be manufactured in a simple and cost-effective manner. Manufacturing can be carried out as described below.

[0101] Figures 3 to 10 show, in lateral views, a possible method for the simultaneous fabrication of several optoelectronic components 100 with the setup shown in Figures 1 and 2. Figures 11 to 13 additionally illustrate aspects in a top view. Furthermore, Figures 14 to 16 show detailed views of components used in the method.

[0102] In the process, as shown in Figure 3, an auxiliary carrier 110 is provided. The auxiliary carrier 110 is a flexible substrate film, such as a UV film. This is a film with an adhesive effect that can be reduced or eliminated by irradiation with UV radiation (ultraviolet radiation).

[0103] As shown in Figure 4, a forming process is subsequently carried out in which a larger, continuous, and structured or 3D-structured conversion layer 120 for radiation conversion is formed on the auxiliary substrate 110 for all optoelectronic components 100 to be manufactured. The conversion layer 120 can also be referred to as a converter layer or converter film. The conversion layers 121 of the individual components 100 are subsequently formed from the conversion layer 120. Accordingly, the conversion layer 120 has a structure of adjacently arranged protrusions or projections 125, each of which tapers towards a flattened end face 126. Laterally to and between the protrusions 125, the conversion layer 120 has layer regions 2024PF01129 27

[0104] with a layer thickness that is less than the layer thickness of the conversion layer 120 in the area of ​​the projections 125. In the forming process, the material of the conversion layer 120, which is in a flowable or viscous state, is formed using a forming tool, two tool halves 151, 152 of which are illustrated in Figure 4. The forming tool used is heatable so that the material of the conversion layer 120 can harden with the forming tool during or at the end of the forming process.

[0105] The upper tool half 151 shown in Figure 4 has a flat pressure surface, and the lower tool half 152 shown in Figure 4 has a structured pressure surface adapted to the structure of the conversion layer 120 to be produced. The auxiliary carrier 110 is located on the upper tool half 151. A release film 153, additionally used in the forming process, is located on the lower tool half 152. In the forming process, the material of the conversion layer 120 is formed between the tool halves 151 and 152, and thus between the auxiliary carrier 110 and the release film 153.

[0106] Figure 14 shows a schematic representation of a material embodiment of the conversion layer 120, which applies accordingly to the conversion layer 121 of a single optoelectronic component 100. The conversion layer 120 comprises a radiolucent matrix material 220 and a converter powder consisting of phosphor particles 221, 222 contained therein. The matrix material 220 is a silicone material. This allows the matrix material 220 to exhibit high stability with respect to blue primary light radiation. The radiation conversion is effected via the phosphor particles 221, 222. According to the embodiment shown in Figure 14, two different types of phosphor particles 221, 222 are used. The first type of phosphor particles 221 can be used to convert the blue primary light radiation into a red secondary light radiation.

[0107] The second phosphor particles 222 can be configured to convert the blue primary light radiation into green or yellow-green secondary light radiation. The phosphor particles 221, 222 can be made of common phosphor materials. For example, the phosphor particles 221 can be made of a potassium silicon fluoride (KSF) phosphor. Figure 14 further indicates that, in addition to the phosphor particles 221, 222, filler particles 223 can also be contained in the matrix material 220. The filler particles 223 can serve to adjust the mechanical and / or thermal properties of the conversion layer 120. This can, for example, improve further processing or make the conversion layer 120 more stable.

[0108] The forming process used to create the structured conversion layer 120 is a compression molding process in which the conversion layer material 130 is compressed between the mold halves 151, 152 or between the auxiliary carrier 110 and the release film 153 (see Figure 4). The mold used can also be a stop block mold, also known as an overflow mold. In this configuration, the conversion layer material 130 can be compressed until a stop is reached (not shown). This makes it possible to precisely and reproducibly adjust the thickness of the conversion layer 120 in the area of ​​the projections 125, as well as next to and between the projections 125.

[0109] The production of the conversion layer 120 with a precise and reproducible layer thickness can further be facilitated by the fact that the forming process used to create the conversion layer 120 takes place at the beginning of the manufacturing process, and thus no process that negatively affects the layer thickness precedes the forming process. The optoelectronic components 100 can therefore be manufactured in such a way that, during radiation operation of the components 100, such radiation conversion can be achieved that a 2024PF01129 29

[0110] The light radiation 182 emitted by the components 100 corresponds with high accuracy to a specified color coordinate. This is because achieving a specified color coordinate can depend, in addition to the concentration of phosphor particles 221, 222, on the layer thickness of the conversion layer 121 in the area of ​​the projection 125 of the components 100.

[0111] To meet color location specifications, the conversion layer 120 can be formed in the forming process such that its thickness in the region of the protrusions 125 is in the range of 50 pm to 250 pm. Laterally to and between the protrusions 125, a relatively small thickness of the conversion layer 120 can be provided in order to limit radiation emission from a component 100 essentially to a region of the associated semiconductor chip 130, as described above. For reliable execution of the forming process, the layer thickness next to and between the protrusions 125 can be three to five times the average particle size of the particles contained in the conversion layer 120 (phosphor particles 221, 222 and optionally further particles 223, see Figure 14), and accordingly in the range of 25 pm to 60 pm.

[0112] Figure 5 shows a process state after demolding, i.e., after removal of the auxiliary carrier 110, provided with the cured structured conversion layer 120, from the mold. A corresponding top view is shown in Figure 11. The produced conversion layer 120 has two opposite main faces, i.e., faces with the largest surface area, one of which has the structure with the projections 125, and the other main face is flat. The flat main face of the conversion layer 120 abuts the auxiliary carrier 110. It is further evident that the projections 125 of the conversion layer 120 have the truncated pyramid shape described above with reference to Figures 1 and 2. It is also clear that the formation of the conversion layer 120 in a sol-2024PF01129 30

[0113] In this manner, the projections 125 are arranged in a matrix-like fashion in the form of rows and columns, spaced apart from one another. As described above, the projections 125 can have rounded edges instead of the sharp edges shown, and the rectangular or square end faces 126 can have rounded corners (not shown). Figure 5 (and subsequent figures) additionally shows separating lines 180, at which singulation takes place at the end of the process.

[0114] Following demolding, radiation-emitting semiconductor chips 130 are arranged and attached to the conversion layer 120. A single semiconductor chip 130 is mounted on each of the projections 125 of the conversion layer 120. This process is carried out using a radiation-transparent adhesive 160. For this purpose, as shown in Figure 6, individual flowable drops of the adhesive 160 are first applied to the end faces 126 of the projections 125 of the conversion layer 120. The adhesive 160 used is a silicone adhesive which has high stability against blue primary light radiation.

[0115] Subsequently, as shown in Figures 7 and 12, the radiation-emitting semiconductor chips 130 are arranged on the projections 125 of the conversion layer 121 and pressed into the adhesive 160 located therein. The application of the adhesive 160 and the placement of the semiconductor chips 130 on the conversion layer 121 can be carried out using a die bonder (not shown). The semiconductor chips 130 have the configuration described above with reference to Figures 1 and 2, including the rear contacts 135. The semiconductor chips 130 are arranged such that their front faces 131 of the semiconductor chips 130 face the conversion layer 121, i.e., the end faces 126 of the projections 125 of the conversion layer 121. In Figure 12, the adhesive 160 is omitted or shown transparently. 2024PF01129 31

[0116] During the arrangement of the semiconductor chips 130, the adhesive 160 is displaced and forced laterally outwards, so that the adhesive 160 is not only located between the front faces 131 of the semiconductor chips 130 and the end faces 126 of the projections 125 of the conversion layer 120, but also laterally surrounds the semiconductor chips 130, resulting in lateral wetting of the lateral sides 133 of the semiconductor chips 130 with the adhesive 160. Due to surface tension, the adhesive 160 thus exhibits a shape on each semiconductor chip 130 that widens towards the conversion layer 120 in the region of the lateral sides 133, and a surface in this region that is curved in cross-section and / or runs obliquely to the sides 133.For the sake of simplicity, the adhesive 160 in Figure 7 (and subsequent figures) is shown only in the area of ​​the lateral chip faces 133, and not between the front faces 131 of the semiconductor chips 130 and the end faces 126 of the projections 125 of the conversion layer 120. The lateral faces 133 can be partially covered with the adhesive 160, as shown in Figure 7. Capillary action allows the semiconductor chips 130 to be held in position by the adhesive 160 after placement.

[0117] A heating process is then carried out to cure the adhesive 160, thereby mechanically bonding the semiconductor chips 130 to the conversion layer 120. For this purpose, the assembly consisting of the support carrier 110, the conversion layer 120, the semiconductor chips 130, and the adhesive 160 can be placed in an oven (not shown).

[0118] As shown in Figures 1 and 2, Figures 7 and 12 clearly show that the semiconductor chips 130 have smaller lateral dimensions than the end faces 126 of the projections 125 of the conversion layer 120, and are furthermore mounted on the conversion layer 120 such that the end faces 126 of the projections 121 protrude laterally relative to the circumference of the semiconductor chips 130. This allows for partial obscuring of the 2024PF01129 32

[0119] The front faces 131 of the semiconductor chips 130 with a subsequently formed reflective layer 140, which can lead to efficiency losses in the operation of the optoelectronic components 100, are avoided. Since the semiconductor chips 130 have smaller lateral dimensions than the end faces 126 of the projections 125, the chip assembly in the aforementioned manner can be ensured even with any positioning tolerances of the semiconductor chips 130 on the conversion layer 120.

[0120] Subsequently, as shown in Figure 8, a further forming process is carried out in which the reflective layer 140 is formed for all optoelectronic components 100 to be manufactured. The reflective layers 141 of the individual components 100 are later formed from the continuous, larger reflective layer 140. In the forming process, the material of the reflective layer 140, which is in a flowable or viscous state, is shaped using a forming tool, two tool halves 171, 172 of which are shown in Figure 8. The two tool halves 171, 172 have flat pressure surfaces. This forming tool is also heatable, so that the material of the reflective layer 140 can be hardened by the forming tool during or at the end of the forming process.

[0121] The formation of the reflective layer 140 is carried out, as shown in Figure 8, such that the reflective layer 140 is present, among other places, in areas adjacent to and between the semiconductor chips 130 and protrusions 125 of the conversion layer 120. In these areas, the reflective layer borders the conversion layer 120, the adhesive 160, and the semiconductor chips 130, so that the protrusions 125 of the conversion layer 120, the adhesive 160, and the semiconductor chips 130 are laterally enclosed by the reflective layer 140. The reflective layer 140 also partially borders the lateral sides 133 of the semiconductor chips 130 and is also present on the back side of the semiconductor chips 130. Da-2024PF01129 33

[0122] The reflective layer 140 borders the back sides 132 of the semiconductor chips 130 laterally from and between the contact elements 135, as well as circumferentially to the contact elements 135.

[0123] Figure 15 shows a schematic representation of a material configuration of the reflective layer 140, which applies accordingly to the reflective layer 141 of a single optoelectronic component 100. The reflective layer 140 comprises a radiolucent matrix material 240 and reflective particles 241 contained therein. The matrix material 240 is a silicone material. This allows the matrix material 240 to exhibit high stability against blue primary light radiation. The matrix material 240 of the reflective layer 140 can correspond to the matrix material 220 of the conversion layer 120 (see Figure 14). The reflective particles 241, which can cause radiation reflection, can be TiO₂ particles or ZrO₂ particles. Figure 15 further shows that filler particles 243 can also be present in the matrix material 240.In this way, the mechanical and / or thermal properties of the reflective layer 140 can be determined.

[0124] The forming process used to create the reflective layer 140 is a foil-assisted molding (FAM) process. In this process, the ends of the contact elements 135 of the semiconductor chips 130 are covered with a sealing film 173, which is located on the upper mold half 171 shown in Figure 8. The auxiliary carrier 110 is located on the lower mold half 172 shown in Figure 8. In the forming process, the material of the reflective layer 140 is formed between the mold halves 171 and 172, and thus between the sealing film 173 and the auxiliary carrier 110 or the components located thereon, such as the conversion layer 120 and the semiconductor chips 130. 2024PF01129 34

[0125] For this purpose, with the mold closed, the material of the reflective layer 140 can be distributed within the mold by injection using a piston system (not shown). During this process, the sealing film 173 can seal the ends or end surfaces of the contact elements 135 of the semiconductor chips 130, thus eliminating the need to apply the material of the reflective layer 140 to them. In contrast, the formation of the reflective layer 140 shown in Figure 8 takes place, among other things, on the back surfaces 132 of the semiconductor chips 130 next to and between the contact elements 135.

[0126] In order to reliably implement such a procedure, the contact elements 135 of the semiconductor chips 130 have a contact thickness that corresponds to three to five times the average particle size of the particles contained in the reflective layer 140 (reflective particles 241 and optionally further particles 243, see Figure 15). The contact thickness can therefore be at least 10 pm, for example 15 pm.

[0127] With regard to the aforementioned contact thickness, a thickened design is further provided for the contact elements 135, as shown in a detail of one contact element 135 in Figure 16. The contact element 135 has a contact section 230 in the form of a superimposed arrangement of three contact layers 231, 232, 233, with the uppermost contact layer 233 forming one end of the contact element 135. The contact layer 231 can be a copper layer. The contact layer 232 can be a nickel barrier layer. The end contact layer 233 can be a tin-silver layer. The contact section 230 with the contact layers 231, 232, 233 is produced by electroplating, so that the contact element 135 has a flat end surface and a rectangular cross-sectional profile.This shape, together with the aforementioned contact thickness, promotes the sealing effect of the sealing film 173 in the area of ​​the contact elements 135 of the semiconductor chips 130, and the rear-side Aus-2024PF01129 35.

[0128] form the reflective layer 140 on the semiconductor chips 130 next to and between the contact elements 135.

[0129] Figure 9 shows a process state after demolding, i.e., after removal of the auxiliary carrier 110, which is provided with the cured reflective layer 140, from the mold. If, after demolding, the contact elements 135 of the semiconductor chips 130 are nevertheless covered at their ends with the reflective layer 140, a process called deflashing can subsequently be carried out. In this process, the reflective layer 140 can be partially removed in the area of ​​the contact elements 135 to expose their ends (not shown).

[0130] Subsequently, as shown in Figures 10 and 13, a singulation process is carried out to provide individual optoelectronic components 100 on the support carrier 110. For this purpose, the reflective layer 140 and conversion layer 120 are cut laterally of and between the semiconductor chips 130 along separation lines 180, so that the assembly of conversion layer 120, semiconductor chips 130, and reflective layer 140 shown in Figure 9 is singulated into separate components 100, each containing one semiconductor chip 130. In this process, the reflective layer 140 and conversion layer 120 are divided into individual reflective layers 141 and conversion layers 121, each belonging to one of the respective components 100. In Figure 13, the reflective layers 141 (as well as the adhesive 160) are omitted or shown transparently.

[0131] Singulation is performed in a state where the assembly of conversion layer 120, semiconductor chips 130, and reflective layer 140 is located on the support carrier 110. Singulation can be achieved using a mechanical process such as sawing. Alternatively, laser or waterjet cutting can be used (not shown). 2024PF01129 36

[0132] The radiation-emitting semiconductor chips 130 of the optoelectronic components 100 have a rectangular contour. This can also be a square contour, as shown, for example, in Figures 2 and 13. The singulation process is carried out in such a way that the conversion layers 121, and thus the optoelectronic components 100, have a geometric top-down shape similar to the contour of the semiconductor chips 130, i.e., also a rectangular or square contour (see Figures 2 and 13). The lateral dimensions (length and width) of the optoelectronic components 100 can be, for example, 50 pm to 300 pm larger than those of the semiconductor chips 130. This allows a homogeneous color-over-angle distribution, with respect to the longitudinal and transverse axes, to be achieved during radiation operation of the components 100.

[0133] After singulation, the separate optoelectronic components 100 still located on the support carrier 110 can be tested. Furthermore, the components 100 are removed from the support carrier 110. For this purpose, the support carrier 110, which is implemented as a UV film, can be irradiated with UV radiation. This reduces or eliminates the adhesive effect of the support carrier 110, allowing the components 100 to be detached from the support carrier 110 (not shown).

[0134] The optoelectronic components 100 can be used in various fields, for example as a light source in the automotive sector. Another possible application is a direct backlighting device 191.

[0135] For illustration, Figure 17 shows a side view of a display device 190 with such a direct backlighting device 191. The backlighting device 191 serves to illuminate or backlight a liquid crystal display 192 (LCD, Liquid Crystal Display) of the display device 190. The backlighting device 191 has a circuit board 195 and several adjacent to each other on a main-2024PF01129 37

[0136] Optoelectronic components 100 are arranged on the side of the printed circuit board 195. The optoelectronic components 100 are mounted on the printed circuit board 195 such that their back sides 102 face the printed circuit board 195, and their front sides 101 face away from the printed circuit board 195 and thus towards the liquid crystal display 192. In this way, light radiation 182 emitted by the optoelectronic components 100 during radiation operation can be directed towards the liquid crystal display 192. This light radiation 182 is white and can be color-matched to the liquid crystal display 192.

[0137] The printed circuit board 195 has contacts 196 which are electrically connected to the contact elements 135 of the optoelectronic components 100 or their semiconductor chips 130 via an electrically conductive connecting material, for example, solder. During the manufacture of the backlighting device 191, the components 100 can be mounted on the printed circuit board 195 by a pick-and-place process (not shown). The backlighting device 191, like the components 100, can be characterized by efficient operation and a cost-effective design.

[0138] The following section explains further variants and configurations that may be considered for an optoelectronic component 100 and a corresponding manufacturing process. Similar features and aspects, as well as identical and functionally equivalent components, are not described in detail again below. For details, please refer to the description above. Furthermore, the possibility of combining features from two or more of the configurations described here is noted.

[0139] Figure 18 shows a side view of an optoelectronic component 100 according to a further embodiment. The optoelectronic component 100 has a structure, 2024PF01129 38

[0140] which largely corresponds to the structure described with reference to Figures 1 and 2. The rear view of Figure 2 can also be used here. Accordingly, the optoelectronic component 100 of Figure 18 has a structured conversion layer 121 for radiation conversion, a radiation-emitting semiconductor chip 130 connected to the conversion layer 121, and a reflective layer 141. The conversion layer 121 has a base section 124 and a projection 125 tapering towards an end face 126, with a truncated pyramid shape. In contrast to Figure 1, the optoelectronic component 100 of Figure 18 does not have a radiation-transmitting adhesive 160. Therefore, the semiconductor chip 130, which is also implemented here as a volume emitter, cannot emit primary light radiation via the lateral chip sides 133 in the radiation operation of the optoelectronic component 100.Instead, in this area, the reflective layer 141, which is completely adjacent to the chip sides 133 and laterally surrounds the semiconductor chip 130, causes a reflection of primary light radiation back into the semiconductor chip 130 (not shown).

[0141] According to the embodiment shown in Figure 18, the optoelectronic component 100 can be implemented in a more cost-effective manner. Furthermore, the semiconductor chip 130, with its front surface 131, abuts the end face 126 of the projection 125 of the conversion layer 121, and the semiconductor chip 130 is thus directly connected to the conversion layer 121. In radiative operation, the primary light radiation generated by the semiconductor chip 130 can be emitted via its front surface 131 and coupled directly (i.e., without an interposed adhesive 160) into the conversion element 121. As described above for the component 100 in Figures 1 and 2, the conversion layer 121 can convert the primary light radiation at least partially into one or more secondary light radiations (not shown), and thus a mixed light radiation 182 can be emitted from the conversion layer 121. The rear-2024PF01129 39

[0142] The lighting device 191 of Figure 17 can also be constructed with components 100 designed according to Figure 18.

[0143] Figures 19 to 22 show, using side views, a possible method for the joint fabrication of several optoelectronic components 100 with the setup shown in Figure 18. The top views of Figures 11 to 13 can also be applied here.

[0144] In the process, as shown in Figure 19, an auxiliary carrier 110, for example designed as a UV film, and, separately from the auxiliary carrier 110, a continuous and structured conversion layer 120 for radiation conversion, intended for all optoelectronic components 100 to be manufactured, are provided. Furthermore, the conversion layer 120 is arranged on the auxiliary carrier 110. The conversion layer 120 has the structure described above with matrix-like projections 125 arranged side by side, which have a truncated pyramid shape and each taper towards an end face 126 (see also Figure 11).

[0145] The conversion layer 120 provided and subsequently arranged on the auxiliary carrier 110 is, in this case, a partially cured conversion layer 120. With reference to Figure 14, the conversion layer 120 comprises a partially cured, radiation-transparent matrix material 220 containing phosphor particles 221, 222 for radiation conversion and, optionally, filler particles 223. The matrix material 220 is a partially cured or partially cross-linked silicone material. Providing the partially cured conversion layer 120 may involve a molding process (not shown). The partially cured conversion layer 120 can also be produced precisely with a predetermined layer thickness. 2024PF01129 40

[0146] Subsequently, as shown in Figure 20, radiation-emitting semiconductor chips 130 are arranged on the conversion layer 120, followed by a heat curing process to fully harden the conversion layer 120. In this embodiment of the method, the semiconductor chips 130 are arranged directly on the conversion layer 120 without the use of an adhesive 160. A semiconductor chip 130 is placed on each of the projections 125 of the conversion layer 120, such that the front faces 131 of the semiconductor chips 130 face the end faces 126 of the projections 125 of the conversion layer 120 and rest on them. The semiconductor chips 130 can be pressed onto or into the conversion layer 120 during this process.

[0147] For the heating process, which is indicated in Figure 20 by arrows illustrating a heat effect 184, the arrangement of auxiliary carrier 110, conversion layer 120 and semiconductor chips 130 can be arranged in an oven (not shown). The complete curing of the conversion layer 120 achieved by the heating process further results in the semiconductor chips 130 being directly and mechanically bonded to the conversion layer 120.

[0148] Figure 20 clearly shows that the semiconductor chips 130 again have smaller lateral dimensions than the end faces 126 of the projections 125 of the conversion layer 120, and are positioned on the conversion layer 120 such that the end faces 126 of the projections 125 protrude laterally from the semiconductor chips 130 relative to their circumference (see also Figure 12). This prevents the front faces 131 of the semiconductor chips 130 from being partially covered by a subsequently formed reflective layer 140. Due to the smaller lateral dimensions of the semiconductor chips 130, the arrangement of the semiconductor chips 130 in the aforementioned manner can also be ensured even with any positioning tolerances that may exist. 2024PF01129 41

[0149] The continuous reflective layer 140, intended for all optoelectronic components 100, is subsequently formed on the auxiliary carrier 110, which is provided with the cured conversion layer 120 and the semiconductor chips 130, as shown in Figure 21. For this purpose, a film-assisted forming process is carried out to form material of the reflective layer 140, as shown in Figure 8. A forming tool and a sealing film 173 covering the ends of the contact elements 135 of the semiconductor chips 130 are used (not shown). The reflective layer 140 is formed such that it adheres to the conversion layer 120 and to the semiconductor chips 130 in areas adjacent to and between them (i.e.,The reflective layer 140 is located adjacent to the sides 133 of the semiconductor chips, as well as on the back side of the semiconductor chips 130, and is adjacent to the back sides 132 of the semiconductor chips 130 next to and between the contact elements 135 and circumferentially to the contact elements 135. The reflective layer 140 has the material configuration described with reference to Figure 15. To promote the sealing effect in the area of ​​the contact elements 135, the contact elements 135 are designed as described above and according to Figure 16.

[0150] Subsequently, or after a deflashing process if necessary, the assembly of conversion layer 120, semiconductor chips 130, and reflective layer 140 on the support carrier 110 is separated into individual optoelectronic components 100, each containing a semiconductor chip 130, as shown in Figure 22. This can be done by sawing or another process (not shown). The reflective layer 140 and conversion layer 120 are cut laterally from and between the semiconductor chips 130 along separation lines 180, thereby separating them into individual reflective layers 141 and conversion layers 121, each belonging to a specific component 100 (see also Figure 13). The separation is also carried out in such a way that the conversion layers 1212024PF01129 42

[0151] and thus the components 100 have a rectangular or square contour similar to the semiconductor chips 130. Subsequently, or after testing the components 100, the auxiliary carrier 110, designed as a UV film, can be irradiated with UV radiation to detach the components 100 from the auxiliary carrier 110 (not shown).

[0152] Instead of radiation-emitting semiconductor chips 130 with a square contour, as shown in Figures 2 and 13, semiconductor chips 130 with a non-square rectangular contour can be used. For illustration, Figure 23 shows a rear view of an optoelectronic component 100 designed in this way. In Figure 23, the adhesive 160 (if present) and the reflective layer 141 are omitted or shown transparently. The component 100 can have a structure corresponding to Figure 1 or Figure 18 when viewed from the side and can be produced, together with other components 100, by carrying out the processes described above. The singulation is carried out such that the conversion layers 121, and thus the components 100, have a rectangular contour similar to that of the semiconductor chips 130, i.e., in this case, a non-square contour.This applies to component 100 of Figure 23. This allows for a homogeneous color-over-angle distribution to be achieved during radiation operation.

[0153] In addition to the implementation forms described above and illustrated in the figures, further implementation forms are conceivable, which may include further variations and / or combinations of features.

[0154] For example, materials other than those listed above may be used. The same applies to numerical data and information on the colors of light radiation, which can be replaced by other data or colors. 2024PF01129 43

[0155] Instead of forming a conversion layer 120, 121 with two types of phosphor particles 221, 222 (see Figure 14), a different number of different types of phosphor particles can be provided. This includes the use of only one type of phosphor particle.

[0156] The mounting of radiation-emitting semiconductor chips 130 on a conversion layer 120 using a radiation-transparent adhesive 160, as described in Figures 6 and 7, can be modified by first applying the adhesive 160 to the front faces 131 of the semiconductor chips 130, and then placing the semiconductor chips 130, together with the adhesive 160, on protrusions 125 of the conversion layer 120. The adhesive 160 can also be displaced and pushed out laterally, so that the adhesive 160 is not only located between the front faces 131 of the semiconductor chips 130 and end faces 126 of the projections 125 of the conversion layer 120, but also lateral sides 133 of the semiconductor chips 130 are covered with the adhesive 160, with the result that the adhesive 160 has a shape in this area that widens towards the conversion layer 120.

[0157] For the process described with reference to Figures 19 to 22, in which a partially cured conversion layer 120 is used, it is possible to arrange radiation-emitting semiconductor chips 130 on the conversion layer 120 using a radiation-transparent adhesive 160. This can be done as described above or as shown in Figures 6 and 7. In a subsequent heating process, both the adhesive 160 and the conversion layer 120 can be fully cured.

[0158] During singulation, the contour of the optoelectronic components 100 can be defined independently of the contours of the radiation-emitting semiconductor chips 130. Abwei-2024PF01129 44

[0159] Based on figures 2, 13 and 23, it is therefore conceivable to realize the components 100 with a contour that is not similar to the contour of the semiconductor chips 130.

[0160] Another possible modification is to provide a different shape for a projection 125 or projections 125 of a conversion layer 120, 121, instead of the truncated pyramid shape corresponding to Figures 2, 11 and 23, and instead a different shape tapering towards an end face 126. Examples of this are a truncated pyramid shape with a lateral surface that has a different number of faces instead of four, and a truncated cone shape.

[0161] Furthermore, it is possible to use radiation-emitting semiconductor chips 130 which have rear contact elements 135 without thickened design and without a contact section 230 produced by electroplating. In this case, the rear surfaces 132 of the semiconductor chips 130 may not be covered with a reflective layer 140, 141, or may only be covered to a small extent.

[0162] Furthermore, instead of radiation-emitting semiconductor chips 130 with two rear contact elements 135, it is possible to use radiation-emitting semiconductor chips with a larger number (for example, three) rear contact elements 135. Such semiconductor chips can have several (for example, two) active zones for radiation generation.

[0163] Although the invention has been further illustrated and described by means of preferred embodiments, the invention is not limited by the disclosed examples and other variations can be derived from them by a person skilled in the art without departing from the scope of protection of the invention. 2024PF01129 45

[0164] REFERENCE MARK LIST

[0165] 100 optoelectronic components

[0166] 101 Front

[0167] 102 Back

[0168] 103 lateral side

[0169] 110 aid workers

[0170] 120 conversion layer

[0171] 121 Conversion layer

[0172] 124 Basic section

[0173] 125 lead

[0174] 126 Front

[0175] 130 semiconductor chips

[0176] 131 Front

[0177] 132 reverse

[0178] 133 lateral side

[0179] 135 Contact element

[0180] 140 reflective layer

[0181] 141 reflective layer

[0182] 151 Tool half

[0183] 152 Tool half

[0184] 153 Separating film

[0185] 160 adhesive

[0186] 171 Tool half

[0187] 172 Tool half

[0188] 173 Sealing foil

[0189] 180 dividing line

[0190] 182 Light radiation

[0191] 184 Heat exposure

[0192] 190 Display device

[0193] 191 Backlighting device

[0194] 192 Liquid Crystal Display

[0195] 195 circuit board

[0196] 196 Contact

[0197] 220 matrix material

[0198] 221 phosphor particles

[0199] 222 phosphor particles

[0200] 223 Filler particles 2024PF01129 46

[0201] 230 Contact section

[0202] 231 Contact layer

[0203] 232 Contact layer

[0204] 233 Contact layer

[0205] 240 matrix material

[0206] 241 reflective particles 243 filler particles

Claims

2024PF01129 47 PATENT CLAIMS 1. Method for manufacturing optoelectronic components ( 100 ) comprising: Providing a structured conversion layer (120) for radiation conversion, wherein the conversion layer (120) has a structure of adjacent projections (125) with a shape tapering towards an end face (126); Arranging radiation-emitting semiconductor chips (130) on the conversion layer (120), wherein a semiconductor chip (130) is arranged on each of the projections (125), wherein the semiconductor chips (130) have a front (131), a back (132) opposite the front (131) and contact elements (135) on the back (132), and wherein the semiconductor chips (130) are arranged on the conversion layer (120) such that the fronts (131) of the semiconductor chips (130) and the end faces (126) of the projections (125) of the conversion layer (120) are facing each other; Forming a reflective layer (140) on the conversion layer (120) at least in areas laterally to and between the semiconductor chips (130); and Cutting the reflective layer ( 140 ) and the conversion layer ( 120 ) in areas laterally of and between the semiconductor chips ( 130 ) to form isolated optoelectronic components ( 100 ) each with a semiconductor chip ( 130 ).

2. Method according to claim 1 , where providing the conversion layer (120) includes forming material of the conversion layer (120) by performing a forming process. 2024PF01129 48 3. Method according to claim 2, wherein in the forming process the conversion layer ( 120) is formed on an auxiliary carrier ( 110), wherein the arrangement of the semiconductor chips ( 130), the formation of the reflective layer ( 140) and the cutting with the conversion layer ( 120) arranged on the auxiliary carrier ( 110) are carried out, and wherein after cutting the individual optoelectronic components ( 100) are removed from the auxiliary carrier ( 110).

4. Method according to one of claims 1 or 2, wherein the provided conversion layer ( 120) is a partially cured conversion layer ( 120 ).

5. Method according to claim 4, wherein the partially cured conversion layer (120) is arranged on an auxiliary carrier (110), wherein the arrangement of the semiconductor chips (130), the formation of the reflective layer (140) and the cutting are carried out with the conversion layer (120) arranged on the auxiliary carrier (110), and wherein after cutting the individual optoelectronic components (100) are removed from the auxiliary carrier (110).

6. Method according to one of claims 4 or 5, wherein, after arranging the semiconductor chips ( 130) on the partially cured conversion layer ( 120), a heating process is carried out to fully cure the conversion layer ( 120).

7. A method according to any one of the preceding claims, wherein the semiconductor chips (130) have smaller lateral dimensions than the end faces (126) of the projections (125) of the conversion layer (120), and wherein the semiconductor chips (130) are arranged on the projections (125) of the conversion layer (120) such that the end faces (126) of the projections (125) of the conversion layer (120) are laterally opposite the semiconductor chips. ( 130) stand out.

8. A method according to any of the preceding claims, wherein the semiconductor chips (130) are arranged on the conversion layer (120) using a radiolucent adhesive (160), wherein during arrangement the lateral sides (133) of the semiconductor chips (130) extending between the front and back sides (131, 132) are covered with the adhesive (160) such that the adhesive (160) has a shape widening towards the conversion layer (120) in the region of the lateral sides (133) of the semiconductor chips (130), and wherein the reflective layer (140) is formed adjacent to the adhesive (160) present in the region of the lateral sides (133) of the semiconductor chips (130).

9. Method according to any of the preceding claims, wherein the semiconductor chips ( 130) are volume-emitting semiconductor chips ( 130).

10. Method according to one of the preceding claims, wherein the contact elements ( 135) of the semiconductor chips ( 130) have a contact thickness of at least ten micrometers.

11. Method according to one of the preceding claims, wherein the contact elements (135) of the semiconductor chips (130) have a contact section (230) forming an end of the contact elements (135) and formed by electroplating.

12. Method according to one of the preceding claims, wherein the formation of the reflective layer (140) is carried out such that the back sides (132) of the semiconductor chips (130) are laterally adjacent to and between the contact elements (135) with the reflective layer (140) 2024PF01129 50 be covered.

13. Method according to any of the preceding claims, wherein forming the reflective layer (140) comprises carrying out a forming process.

14. Method according to claim 13 , wherein the forming process is a film-supported forming process in which the contact elements ( 135 ) of the semiconductor chips ( 130 ) are covered with a film ( 173 ).

15. Method according to one of the preceding claims, wherein the semiconductor chips (130) have a rectangular or square geometric top view, and wherein the cutting is carried out such that the isolated optoelectronic components (100) have a geometric top view similar to the top view of the semiconductor chips (130).

16. Optoelectronic component comprising: a structured conversion layer ( 121 ) for radiation conversion, wherein the conversion layer ( 121 ) has a projection ( 125 ) with a shape tapering towards an end face ( 126 ); a radiation-emitting semiconductor chip (130) connected to the conversion layer (121), wherein the semiconductor chip (130) has a front (131), a back (132) opposite the front (131), and contact elements (135) on the back (132), and wherein the front (131) of the semiconductor chip (130) and the end face (126) of the projection (125) of the conversion layer (121) face each other; and at least one adjacent to the conversion layer (121) in an area laterally adjacent to the semiconductor chip (130)-2024PF01129 51 the reflective layer ( 141 ) .

17. Optoelectronic component according to claim 16, wherein the semiconductor chip (130) has smaller lateral dimensions than the end face (126) of the projection (125) of the conversion layer (121), and wherein the semiconductor chip (130) is connected to the conversion layer (121) such that the end face (126) protrudes laterally relative to the semiconductor chip (130).

18. Optoelectronic component according to one of claims 16 or 17 , further comprising a radiolucent adhesive (160) via which the semiconductor chip (130) is connected to the conversion layer (121), wherein lateral sides (133) of the semiconductor chip (130) extending between the front and back (131, 132) are covered with the adhesive (160), wherein the adhesive (160) in the region of the lateral sides (133) of the semiconductor chip (130) has a shape that widens towards the conversion layer (121), and wherein the reflective layer (141) is adjacent to the adhesive (160) present in the region of the lateral sides (133) of the semiconductor chip (130).

19. Having a direct backlighting device ( 191 ) for a liquid crystal display ( 192 ): a carrier ( 195 ) ; and several optoelectronic components ( 100 ) according to one of claims 16 to 18, wherein the optoelectronic components ( 100 ) are arranged side by side on the carrier ( 195 ).

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