Method for producing a power semiconductor arrangement having a heat pipe
Patent Information
- Authority / Receiving Office
- WO · WO
- Patent Type
- Applications
- Current Assignee / Owner
- Filing Date
- 2026-01-20
- Publication Date
- 2026-08-13
Smart Images
Figure EP2026051271_13082026_PF_FP_ABST
Abstract
Description
[0001] 202414580 Foreign version Fair copy 1
[0002] Description
[0003] Method for manufacturing a power semiconductor assembly with a heat pipe
[0004] The invention relates to a method for manufacturing a power semiconductor arrangement with a heat pipe comprising a heat sink and at least one power semiconductor circuit arrangement.
[0005] Furthermore, the invention relates to a power semiconductor arrangement comprising a heat pipe, a heat sink, and at least one power semiconductor circuit arrangement.
[0006] Furthermore, the invention relates to a power converter with at least one such power semiconductor arrangement.
[0007] Such a power semiconductor arrangement can be used, among other things, in a power converter. A power converter can be, for example, a rectifier, an inverter, a converter, or a DC / DC converter. With the ongoing miniaturization of packaging and interconnection technologies, the power density in power converters is increasing. To prevent electronic failures due to thermal overload, increasingly effective, yet also more cost-efficient, concepts for dissipating heat from semiconductor elements are needed. A heat pipe can be used to meet these requirements. In this context, the term "heat pipe" also includes a thermal tube, especially a thermosiphon, and a pulsating heat pipe.
[0008] The patent application WO 2022 / 214231 A1 describes a semiconductor module arrangement comprising a heat sink and at least one semiconductor module contacted on the heat sink. To enable more effective heat dissipation and more cost-effective manufacturing compared to the prior art, it is proposed that the heat sink comprise a heat sink base and a heat sink attachment. The heat sink attachment has a channel structure on a first surface in which a heat transfer fluid is arranged. The heat sink base has a surface in which the channel structure is hermetically sealed by a metallurgical bond with the surface of the heat sink base, so that both the heat sink attachment and the heat sink base are in direct contact with the heat.
[0009] The heat transport fluid is located in a pulsating heat pipe formed by the hermetically sealed channel structure and the heat transport fluid, which is in a thermally conductive connection with the semiconductor module.
[0010] The patent application WO 2021 / 099019 A1 describes an electronic module comprising a pulsating heat pipe with a channel structure in which a heat transfer medium is arranged, and at least one electrical component that is in direct contact with the heat transfer medium and / or is connected to an electrically conductive contact element that is in direct contact with the heat transfer medium.
[0011] Against this background, the invention aims to provide a cost-effective method for manufacturing a power semiconductor arrangement with a heat pipe that enables improved heat dissipation.
[0012] This problem is solved according to the invention by a method for manufacturing a power semiconductor arrangement with a heat pipe comprising a heat sink and at least one power semiconductor circuit arrangement, wherein the heat sink comprises a heat sink base and a heat sink attachment, the heat sink attachment having a flat first surface and a flat second surface on a side facing away from the first surface, wherein the method comprises the following steps: introducing a channel structure into a flat third surface of the heat sink base, wherein the channel structure comprises at least one channel with a side wall, connecting the power semiconductor circuit arrangement on the first surface of the heat sink attachment, applying a sealing layer to at least parts of the second and / or third surface.Connecting the heat sink attachment to the heat sink base by pressing the second surface of the heat sink attachment onto the third surface of the heat sink base, wherein the channel structure is hermetically sealed by the sealing layer, filling the channel structure with a heat transfer fluid to form the heat pipe via a filling channel running parallel to the third surface and through the side wall of at least one channel, wherein the filling takes place after connecting the heat sink attachment to the heat sink base, wherein the heat pipe is in a thermally conductive connection with the power semiconductor circuit arrangement.
[0013] Furthermore, the object is solved according to the invention by a power semiconductor arrangement with a heat pipe comprising a heat sink and at least one power semiconductor circuit arrangement, wherein the heat sink comprises a heat sink base and a heat sink attachment. 202414580 Foreign version Fair copy 3
[0014] comprising, wherein the heat sink attachment has a flat first surface and a flat second surface on a side facing away from the first surface, wherein the heat sink base body has a channel structure incorporated in a flat third surface, wherein the channel structure comprises at least one channel with a side wall, wherein a power semiconductor circuit arrangement is connected on the first surface of the heat sink attachment, wherein the heat sink attachment is positively connected to the heat sink base body by pressing the second surface of the heat sink attachment onto the third surface of the heat sink base body via a sealing layer, and the channel structure is hermetically sealed via the sealing layer, wherein the channel structure hermetically sealed by the sealing layer is filled with a heat transfer fluid to form the heat pipe via a filling channel.wherein the filling channel is arranged parallel to the third surface and extending through the side wall of at least one channel, wherein the heat pipe is in a thermally conductive connection with the power semiconductor circuit arrangement.
[0015] Furthermore, the problem is solved according to the invention by a power converter with at least one such power semiconductor arrangement.
[0016] The advantages and preferred configurations listed below with regard to the method can be applied analogously to the power semiconductor arrangement and the power converter.
[0017] The invention is based on the idea of improving the heat dissipation of a power semiconductor circuit arrangement by using a heat pipe integrated into a heat sink, wherein the heat pipe is in a thermally conductive connection with the power semiconductor circuit arrangement. The heat sink comprises a base body and a top section, which can be made of different materials. For example, the base body is made of an aluminum alloy, while the top section can be made at least partially of copper or a copper alloy. The top section has a flat first surface and a flat second surface on an opposite side. For example, the top section is cuboid in shape. It can be made of a sheet metal part.The heat sink base has a flat third surface, which, for example, corresponds to the second surface of the heat sink attachment in terms of its outer contour and dimensions. For instance, the heat sink base has a plurality of cooling fins on one side opposite the third surface. The manufacturing process involves incorporating a channel structure into the flat third surface of the heat sink base. This can be done, among other things, by a machining process, e.g., milling. 202414580 Foreign version Fair copy 4.
[0018] Such a method is simple and cost-effective. The channel structure comprises at least one channel with a side wall. For example, the channel of the channel structure has a rectangular or square cross-section. The side wall is arranged, in particular, perpendicular to the third surface of the heat sink base. For example, the channel structure comprises at least one channel that is arranged, in particular orthogonally, transversely to the cooling fins. In particular, the channel structure is completely embedded in the heat sink base.
[0019] In a further step, the power semiconductor circuit assembly is connected to the first surface of the heat sink attachment. Alternatively, this connection can be made before the channel structure is integrated into the heat sink base. Specifically, the power semiconductor circuit assembly is bonded to the first surface of the heat sink attachment using a material-bonded process, such as soldering or sintering, thus minimizing thermal resistance between the power semiconductor circuit assembly and the heat sink.
[0020] In a further step, a sealing layer is applied to at least parts of the second and / or third surface. For example, the sealing layer is applied, particularly completely, around the channel structure integrated into the heat sink base. The sealing layer can contain, among other things, an epoxy sealant. Such an epoxy sealant forms a strong bond with the metal surfaces and prevents the escape of gases or liquids. In a further step, the heat sink attachment is connected to the heat sink base by pressing the second surface of the heat sink attachment onto the third surface of the heat sink base, whereby the channel structure is hermetically sealed by the sealing layer. The flat second surface forms a flat cover surface of the channel structure, which is arranged perpendicular to the side surface.In particular, the heat sink attachment is flush with the sides of the heat sink base. An epoxy sealant creates a fluid-tight and permanent bond between the surfaces of the heat sink base and the heat sink attachment.
[0021] In a subsequent step, the channel structure is filled with a heat transfer fluid to form the heat pipe via a filling channel running parallel to the third surface and through the side wall of at least one channel. The filling channel can, for example, have a round, particularly circular, cross-section and can be sealed fluid-tight. The filling channel is manufactured, for example, by a machining process such as drilling or milling. Suitable heat transfer fluids include water, ammonia, acetone, and / or methanol. Alternatively, electrically insulating fluorinated liquids can be used.
[0022] The second surface of the heat sink attachment is in direct contact with the heat transfer fluid, thus minimizing thermal resistance. This enables improved heat dissipation. Since filling takes place laterally through the filling channel after connecting the power semiconductor circuit assembly to the heat sink attachment, improved manufacturing flexibility is achieved. Furthermore, this simplifies manufacturing, resulting in cost savings.
[0023] Another embodiment provides that the power semiconductor circuit arrangement has a substrate, wherein at least the flat first surface of the heat sink attachment is coated, and wherein connecting the power semiconductor circuit arrangement involves a metallurgical bond between the substrate and the coated first surface of the heat sink attachment. If the heat sink attachment is manufactured, for example, at least in the region of the first surface from aluminum or an aluminum alloy, the flat first surface can be coated by nickel plating to create a solderable surface cost-effectively. The nickel plating can be carried out, among other things, by an additive or generative process, in particular by a thermal spraying process, e.g., cold gas spraying, which leads to cost savings, especially compared to electroplating.
[0024] Another embodiment provides that the heat sink base and / or the heat sink attachment are made of aluminum or an aluminum alloy. This allows the heat sink base and / or the heat sink attachment to be manufactured simply and cost-effectively from continuous profiles, e.g., by extrusion. For example, an aluminum alloy with a silicon content of up to 1.0%, and in particular up to 0.6%, can be used in extrusion. Thus, a lower silicon content can be used in extrusion, especially compared to a cast aluminum base and / or attachment, resulting in improved thermal conductivity. Furthermore, cooling fins in the heat sink base can be manufactured simply and cost-effectively using such an extrusion process.
[0025] Another embodiment provides that the heat sink attachment is connected to the heat sink base by means of a force-fit connection using at least one connecting element, in particular a detachable one. Suitable connecting elements include, among others, a screw, a clamp, and / or a spring. Screws, in particular, provide the necessary contact force for the heat sink attachment permanently and can additionally secure the heat sink in a Ge-202414580 Foreign version Fair copy 6
[0026] The housing is detachably fixed. A detachable connection between the heat sink attachment and the heat sink base also allows for easy and cost-effective repair and recycling.
[0027] Another embodiment provides that the sealing layer comprises an elastic material. Such an elastic material includes, among others, a silicone or hybrid polymer sealant. Such an elastic sealant, particularly in conjunction with a force-fit connection using a fastener such as a screw, enables simple and cost-effective repair and recycling of the power semiconductor assembly.
[0028] Another embodiment provides that the channel structure comprises a meandering channel and that at least one power semiconductor circuit arrangement is positioned on top of the meandering channel in a top view. In particular, such a channel structure forms a pulsating heat pipe. Waste heat generated in the power semiconductor circuit arrangement is transferred to the entire thermal mass of the heat sink, especially during load cycles. With such an arrangement, the heat flow reaches the heat pipe quickly. Particularly under continuous load, the waste heat is optimally distributed across the heat sink by such an arrangement, thus preventing hotspots. For example, sections of the meandering channel running parallel in a longitudinal direction, and especially orthogonally, are arranged transversely to the cooling fins.
[0029] Another embodiment provides that the power semiconductor elements of the power semiconductor circuit arrangement are positioned on the substrate such that the meandering channel runs below the power semiconductor elements in a top view. The power semiconductor elements can include, among other things, transistors and / or diodes. Such transistors can be, for example, insulated-gate bipolar transistors (IGBTs) or wide-bandgap transistors. Wide-bandgap transistors can be implemented, for example, using silicon carbide or gallium nitride technology and enable, among other things, higher switching frequencies. Heat generated in the power semiconductor elements is transferred to the entire thermal mass of the heat sink, especially during load cycles. With such an arrangement, the heat flow quickly reaches the heat pipe.Particularly under continuous load, this arrangement optimizes the distribution of waste heat across the heat sink, thus preventing hotspots under the power semiconductor elements. 202414580 Foreign version Fair copy 7.
[0030] Another embodiment provides that the heat sink base has a rear wall extending perpendicular to the third surface, with the filling channel running through this rear wall. In particular, the rear wall is part of a housing for the power converter in which the power semiconductor assembly is installed. The filling channel running through the rear wall allows the heat pipe to be filled easily and cost-effectively, even when installed. This enables the heat pipe to be filled with an application-specific fluid. Furthermore, changing the fluid, for example during a repair, is made simple and cost-effective.
[0031] The invention will now be described and explained in more detail with reference to the exemplary embodiments shown in the figures.
[0032] They show:
[0033] FIG 1 a schematic sectional view of a method for manufacturing a first embodiment of a power semiconductor arrangement,
[0034] FIG 2 shows a schematic sectional view of a first embodiment of a power semiconductor arrangement,
[0035] FIG 3 shows a schematic sectional view of a method for manufacturing a second embodiment of a power semiconductor arrangement,
[0036] FIG 4 shows a schematic sectional view of a second embodiment of a power semiconductor arrangement,
[0037] FIG 5 shows a schematic representation of a third embodiment of a power semiconductor arrangement in a top view,
[0038] FIG 6 shows a schematic representation of a fourth embodiment of a power semiconductor arrangement in a top view.
[0039] FIG 7 a schematic representation of a fifth embodiment of a power semiconductor arrangement in a top view, 202414580 Foreign version Fair copy 8
[0040] FIG 8 shows a schematic representation of a sixth embodiment of a power semiconductor arrangement in a top view,
[0041] FIG 9 shows a flowchart of a process for manufacturing a power semiconductor assembly,
[0042] FIG 10 shows a schematic representation of a power converter.
[0043] The exemplary embodiments described below are preferred embodiments of the invention. In these exemplary embodiments, the described components each represent individual features of the invention that can be considered independently of one another. Each of these features further develops the invention independently and can therefore be considered part of the invention individually or in a combination other than that shown. Furthermore, the described embodiments can also be supplemented by other features of the invention already described.
[0044] The same reference symbols have the same meaning in the different figures.
[0045] FIG 1 shows a schematic sectional view of a method for manufacturing a first embodiment of a power semiconductor arrangement 2, which comprises a heat sink 4 and a power semiconductor circuit arrangement 6. The heat sink 4 includes a heat sink base 8 and a heat sink attachment 10, the heat sink attachment 10 having a flat first surface 12 and, on a side facing away from the first surface 12, a flat second surface 14. The first surface 12 is defined as a horizontally extending xy-plane. The heat sink base 8 is made of a metallic material, which may include, among other things, aluminum or an aluminum alloy. For example, the heat sink 4 is manufactured from an aluminum alloy by extrusion. The heat sink base 8 has a plurality of cooling fins 11, which are arranged, by way of example, extending in the y-direction.The heat sink attachment 10 can be designed as a substantially cuboid metal body, in particular as a metal sheet, which may be made of the same material as the heat sink base body 8. Alternatively, the heat sink attachment 10 can be made of a material that differs from that of the heat sink base body 8. For example, the material of the heat sink attachment 10 may differ from the material of the heat sink base body 8 in having a higher thermal conductivity. In particular, the heat sink attachment 10 may be made at least partially of copper or a copper alloy. 202414580 Foreign version Fair copy 9.
[0046] The power semiconductor circuit arrangement 6 comprises a substrate 16 on which power semiconductor elements 18 are contacted. The substrate 16 and the power semiconductor elements 18 are at least partially enclosed by a housing 19 made of a plastic material. The substrate 16 can be, among other things, a DCB (Direct Copper Bonded) substrate. The power semiconductor elements 18 can include, among other things, transistors and / or diodes. Such transistors can be, among other things, insulated-gate bipolar transistors (IGBTs) or wide-bandgap transistors. Wide-bandgap transistors can, for example, be implemented using silicon carbide or gallium nitride technology and enable, among other things, higher switching frequencies. For example, the power semiconductor elements 18 are metallurgically bonded to the substrate 16, in particular by soldering and / or sintering.At least the flat first surface 12 of the heat sink attachment 10 can be coated. If the heat sink attachment 10 is made of aluminum or an aluminum alloy, at least in the area of the first surface 12, the flat first surface 12 can be coated by nickel plating. The nickel plating can be carried out, among other methods, by an additive or generative process, in particular by a thermal spraying process, e.g., cold gas spraying. The power semiconductor circuit arrangement 6 is connected to the first surface 12 of the heat sink attachment 10 via the substrate 16.
[0047] The heat sink base body 8 has a flat third surface 20. A channel structure 22 is introduced into the flat third surface 20 of the heat sink base body 8. The channel structure 22 comprises, for example, at least one channel 24 that meanders in a plan view and has a side wall 26. The channel structure 22 is completely integrated into the heat sink base body 8. The channel structure 22 can be introduced, among other methods, by machining, e.g., milling. For example, sections of the meandering channel 24 running parallel in a longitudinal direction, such as the cooling fins 11 in the y-direction, are introduced. Alternatively, the sections of the meandering channel 24 running parallel in a longitudinal direction can be arranged, in particular orthogonally, transversely to the cooling fins 11 in the x-direction.
[0048] In a further step, a sealing layer 28 is applied to at least parts of the third surface 20. Additionally or alternatively, the sealing layer 28 can be applied to at least parts of the second surface 14. The sealing layer 28 can contain, among other things, an elastic material, in particular a silicone or hybrid polymer sealant. 202414580 Foreign version Fair copy 10
[0049] In a further step, the heat sink attachment D 10 is connected to the heat sink base 8 by pressing the second surface 14 of the heat sink attachment 10 onto the third surface 20 of the heat sink base 8, whereby the heat sink attachment 10 is detachably fixed to the heat sink base 8 by at least one connecting element 30. For example, the at least one connecting element 30 is designed as a screw. Additionally or alternatively, the at least one connecting element 30 can include, among other things, at least one clamp and / or a spring. The sealing layer 28 hermetically seals the channel structure 22, which is closed after the connection D of the heat sink attachment 10 to the heat sink base 8. Alternatively, an epoxy sealant can be used, as this forms a strong bond with the metal surfaces and prevents the escape of gases or liquids.Optionally, when using an epoxy sealant, permanent fixing by means of bonding agent 22 can be omitted.
[0050] In a subsequent step, the channel structure 22 is filled with a heat transfer fluid 34 via a filling channel 32 running parallel to the third surface 20 and through the side wall 26. For example, the filling channel 32 is arranged perpendicular to the cooling fins 11 extending in the y-direction. Suitable heat transfer fluids include water, ammonia, acetone, and / or methanol. Fluorinated liquids can also be used. The filling channel 32 can have a round, particularly circular, cross-section and can be sealed to be fluid-tight. The filling channel 32 is manufactured, for example, by a machining process such as drilling or milling. The lateral filling with the heat transfer fluid 34 creates a heat pipe, particularly a pulsating heat pipe, which is in thermally conductive contact with the power semiconductor circuit arrangement 6.
[0051] FIG. 2 shows a schematic sectional view of a first embodiment of a power semiconductor arrangement 2 with a heat pipe 36, in particular a pulsating one, wherein the power semiconductor arrangement 2 is manufactured according to the method described in FIG. 1. The filling channel 32 is fluid-tightly sealed by a sealing element 38.
[0052] FIG 3 shows a schematic sectional view of a method for manufacturing a second embodiment of a power semiconductor arrangement 2, wherein the heat sink base body 8 has a rear wall 40 extending perpendicular to the third surface 20 and wherein the filling channel 32 is arranged extending through the rear wall 40. The sealing layer 28 contains an epoxy sealant that forms a strong bond with the metallic surfaces 14, 20 of the heat sink base body 8 and the heat sink attachment 10 and prevents the leakage of 202414580 Foreign version Fair copy 11
[0053] The epoxy sealant prevents the passage of gases or liquids. The surfaces 14 and 20 of the heat sink base 8 and the heat sink attachment 10 are fluid-tight and permanently bonded together.
[0054] Alternatively, the sealing layer 28 can be designed as a metallic layer, e.g., as a solder layer, whereby the surfaces 14, 20 of the heat sink base 8 and the heat sink attachment 10 are also coated when joined by soldering D. If the heat sink base 8 and the heat sink attachment 10 are made of aluminum or an aluminum alloy, the surfaces 14, 20 are coated by nickel plating. The nickel plating can be carried out, among other methods, by additive or generative processes. Such a soldered joint creates a fluid-tight and permanent connection between the surfaces 14, 20 of the heat sink base 8 and the heat sink attachment 10. The further embodiment of the process in FIG. 3 corresponds to that in FIG. 1.
[0055] FIG. 4 shows a schematic sectional view of a second embodiment of a power semiconductor arrangement 2 with a heat pipe 36, in particular a pulsating one, wherein the power semiconductor arrangement 2 is manufactured according to the method described in FIG. 3. The further embodiment of the power semiconductor arrangement 2 in FIG. 4 corresponds to that in FIG. 2.
[0056] FIG. 5 shows a schematic top view of a third embodiment of a power semiconductor arrangement 2. The power semiconductor circuit arrangement 6 has a substrate, which is not shown in FIG. 5 for clarity, with a rectangular base. The channel structure 22 of the heat pipe 36 is closed and has a meandering channel 24 and a connecting channel 42 that is fluidically connected to the meandering channel 24. In a top view, the channel structure 22 covers a substantially rectangular area. The power semiconductor circuit arrangement 6 is arranged on the meandering channel 24 in a top view. The further embodiment of the power semiconductor arrangement 2 in FIG. 5 corresponds to that in FIG. 4.
[0057] FIG. 6 shows a schematic top view of a fourth embodiment of a power semiconductor arrangement 2. The power semiconductor arrangement 2 includes, by way of example, two power semiconductor circuit arrangements 6, which are arranged offset in the x and y directions on heat sinks 4. The power semiconductor circuit arrangements 6 are identical and each has a substrate, which for clarity is not shown in FIG. 6, with a rectangular base of the same dimensions. (Jede202414580 Auslandsfassung Merschrift 12)
[0058] The power semiconductor circuit arrangements 6 are associated with a heat pipe 36, each of which has a channel structure 22 with a meandering channel 24 and a fluidically connected connecting channel 42. The power semiconductor circuit arrangements 6 are each arranged in a top view on the meandering channel 24 of the respective heat pipe 36. The channel structure 22 of the heat pipe 36 is filled via a dedicated filling channel 32, which is fluidly connected to the respective channel structure 22. The filling channels 32 are arranged parallel in the x-direction through the rear wall 40. Due to the x-direction offset arrangement of the power semiconductor circuit arrangements 6, the filling channels 32 have different lengths. The further embodiment of the power semiconductor arrangement 2 in FIG. 6 corresponds to that in FIG. 5.
[0059] FIG. 7 shows a schematic top view of a fifth embodiment of a power semiconductor arrangement 2. The power semiconductor arrangement 2 includes, by way of example, two identical power semiconductor circuit assemblies 6, which are arranged offset in the x and y directions on heat sinks 4. The power semiconductor circuit assemblies 6 are associated with a common heat pipe 36, which has a channel structure 22 with a meandering channel 24 and a fluidically connected connecting channel 42.
[0060] FIG. 8 shows a schematic top view of a sixth embodiment of a power semiconductor arrangement 2, where, for clarity, the housing of the power semiconductor circuit arrangement 6 is not shown in FIG. 8. The power semiconductor circuit arrangement 6 comprises power semiconductor elements 18, which are configured as transistors and diodes, and, by way of example, a passive component 44, e.g., a shunt resistor for measuring an output current of the power semiconductor circuit arrangement 6. The power semiconductor elements 18 and the passive component 44 are metallurgically bonded to a substrate 16, which is configured as a DCB substrate, and are arranged in a top view on the meandering channel 24 of the channel structure 22 of the heat pipe 36.Furthermore, the power semiconductor elements 18 and the exemplary passive component 44 are arranged such that optimal heat dissipation via the heat pipe 36 occurs through heat spreading. The further embodiment of the power semiconductor arrangement 2 in FIG. 8 corresponds to that in FIG. 4.
[0061] FIG 9 shows a flowchart of a process for manufacturing a power semiconductor arrangement, which can be implemented, for example, according to one of Figures 2 or 5 to 8. [202414580 Foreign version Fair copy 13]
[0062] The method comprises inserting A of the channel structure. In a further step, B of the power semiconductor circuit arrangement is connected to the first surface of the heat sink attachment. Alternatively, B of the power semiconductor circuit arrangement can be connected to the heat sink attachment before A of the channel structure is inserted into the heat sink base. In a further step, C of the sealing layer is applied to at least parts of the second and / or third surface. In a further step, D of the heat sink attachment is connected to the heat sink base by pressing the second surface of the heat sink attachment onto the third surface of the heat sink base, whereby the channel structure is hermetically sealed by the sealing layer.In a further step, the channel structure E is filled with a heat transfer fluid to form the heat pipe via a filling channel running parallel to the third surface and through the side wall of at least one channel, wherein the heat pipe is in a thermally conductive connection with the power semiconductor circuit arrangement. The further embodiment of the method in FIG. 9 corresponds to that in FIG. 1 or FIG. 3.
[0063] FIG 10 shows a schematic representation of a power converter 46 comprising a power semiconductor arrangement 2. The power converter 46 can comprise more than one power semiconductor arrangement 2.
[0064] In summary, the invention relates to a method for manufacturing a power semiconductor assembly 2 with a heat pipe 36, comprising a heat sink 4 and at least one power semiconductor circuit assembly 6. To achieve a favorable cost position and improved heat dissipation, it is proposed that the heat sink 4 comprise a heat sink base 8 and a heat sink attachment 10, wherein the heat sink attachment 10 has a flat first surface 12 and, on a side facing away from the first surface 12, a flat second surface 14, wherein the method comprises the following steps: introducing A a channel structure 22 in a flat third surface 20 of the heat sink base 8, wherein the channel structure 22 comprises at least one channel 24 with a side wall 26, connecting B the power semiconductor circuit assembly 6 on the first surface 12 of the heat sink attachment 10,Applying C a sealing layer 28 to at least parts of the second and / or third surface 14, 20, connecting D the heat sink attachment 10 to the heat sink base 8 by pressing the second surface 14 of the heat sink attachment 10 onto the third surface 20 of the heat sink base 8, wherein the channel structure 22 is hermetically sealed by the sealing layer 28, filling E the channel structure 22 with a heat transfer fluid 34 to form the heat pipe 36 via a filling channel 32,202414580 Foreign version Fair copy 14,
[0065] wherein the filling E takes place after connecting D of the heat sink attachment 10 to the heat sink base 8, wherein the heat pipe 36 is in a thermally conductive connection with the power semiconductor circuit arrangement 6.
Claims
202414580 Foreign version Fair copy 15 Patent claims 1. Method for manufacturing a power semiconductor arrangement (2) with a heat pipe (36) comprising a heat sink (4) and at least one power semiconductor circuit arrangement (6), wherein the heat sink (4) comprises a heat sink base body (8) and a heat sink attachment (10), wherein the heat sink attachment (10) has a flat first surface (12) and on a side facing away from the first surface (12) a flat second surface (14), the procedure includes the following steps: Incorporating (A) a channel structure (22) into a planar third surface (20) of the heat sink base body (8), wherein the channel structure (22) comprises at least one channel (24) with a side wall (26), Connecting (B) the power semiconductor circuit arrangement (6) to the first surface (12) of the heat sink attachment (10), - Applying (C) a sealing layer (28) to at least parts of the second and / or third surface (14, 20), Connecting (D) the heat sink attachment (10) to the heat sink base body (8) by pressing the second surface (14) of the heat sink attachment (10) onto the third surface (20) of the heat sink base body (8) to form a closed channel structure (22), wherein the closed channel structure (22) is hermetically sealed by the sealing layer (28), Filling (E) the closed channel structure (22) with a heat transfer fluid (34) to form the heat pipe (36) via a filling channel (32) running parallel to the third surface (20) and through the side wall (26) of at least one channel (24), wherein the filling (E) takes place after connecting (D) the heat sink attachment (10) to the heat sink base body (8), wherein the heat pipe (36) is in a thermally conductive connection with the power semiconductor circuit arrangement (6).
2. Method according to claim 1, wherein the power semiconductor circuit arrangement (6) comprises a substrate (16), wherein at least the flat first surface (12) of the heat sink attachment (10) is coated and 202414580 Foreign version Fair copy 16 wherein the connecting (B) of the power semiconductor circuit arrangement (6) involves a material-bonded connection of the substrate (16) to the coated first surface (12) of the heat sink attachment (10).
3. Method according to one of claims 1 or 2, wherein the heat sink base body (8) and / or the heat sink attachment (10) are made of aluminium or an aluminium alloy.
4. Method according to any of the preceding claims, wherein the connection (D) of the heat sink attachment (10) to the heat sink base body (8) is force-fit by means of at least one connecting means (30), in particular detachable.
5. Method according to claim 4, wherein the sealing layer (28) comprises an elastic material.
6. Method according to any of the preceding claims, wherein the closed channel structure (22) comprises a meandering channel (24) and the at least one power semiconductor circuit arrangement (6) is arranged in a top view on the meandering channel (24).
7. Method according to claim 6, wherein power semiconductor elements (18) of the power semiconductor circuit arrangement (6) are arranged on the substrate (16) such that the meandering channel (24) runs below the power semiconductor elements (18) in a top view.
8. Method according to any of the preceding claims, wherein the heat sink base body (8) has a rear wall (40) extending perpendicular to the third surface (20), wherein the filling channel (32) is arranged running through the rear wall (40).
9. Power semiconductor arrangement (2) comprising a heat pipe (36), a heat sink (4) and at least one power semiconductor circuit arrangement (6), wherein the heat sink (4) comprises a heat sink base (8) and a heat sink attachment (10), wherein the heat sink attachment (10) has a flat first surface (12) and on a side facing away from the first surface (12) a flat second surface (14), 202414580 Foreign version Fair copy 17 wherein the heat sink base body (8) has a channel structure (22) incorporated into a planar third surface (20), wherein the channel structure (22) comprises at least one channel (24) with a side wall (26), wherein the power semiconductor circuit arrangement (6) is connected to the first surface (12) of the heat sink attachment (10), wherein the heat sink attachment (10) is positively connected to the heat sink base body (8) by pressing the second surface (14) of the heat sink attachment (10) onto the third surface (20) of the heat sink base body (8) via a sealing layer (28) to form a closed channel structure (22) and the closed channel structure (22) is hermetically sealed via the sealing layer (28), wherein the closed channel structure (22) which is hermetically sealed by the sealing layer (28) is filled with a heat transfer fluid (34) via a filling channel (32) to form the heat pipe (36), wherein the filling channel (32) is arranged parallel to the third surface (20) and extending through the side wall (26) of at least one channel (24), wherein the heat pipe (36) is in a thermally conductive connection with the power semiconductor circuit arrangement (6).
10. Power semiconductor arrangement (2) according to claim 9, wherein the heat sink attachment (10) is fixed to the heat sink base body (8) by means of connecting means (30), in particular detachably.
11. Power semiconductor arrangement (2) according to one of claims 9 or 10, wherein the sealing layer (28) comprises an elastic material.
12. Power semiconductor arrangement (2) according to one of claims 9 to 11, wherein the closed channel structure (22) comprises a meandering channel (24) and the at least one power semiconductor circuit arrangement (6) is arranged in a top view on the meandering channel (24).
13. Power semiconductor arrangement (2) according to one of claims 9 to 12, wherein the power semiconductor circuit arrangement (6) comprises a substrate (16), wherein the power semiconductor elements (18) of the power semiconductor circuit arrangement (6) are arranged on the substrate (16) such that the meandering channel (24) is arranged below the power semiconductor elements (18) in a top view. 202414580 Foreign version Fair copy 18 14. Power semiconductor arrangement (2) according to any one of claims 9 to 13, wherein the heat sink base body (8) has a rear wall (40) extending perpendicular to the third surface (20), wherein the filling channel (32) is arranged running through the rear wall (40).
15. Power semiconductor arrangement (2) according to claim 14, wherein the cooling body (8) has a plurality of cooling fins (11) and the filling channel (32) is arranged perpendicular to parallel cooling fins (11).
16. Power converter (46) with at least one power semiconductor arrangement (2) according to one of claims 9 to 15.