Sensor devices and methods for producing thereof
Patent Information
- Authority / Receiving Office
- WO · WO
- Patent Type
- Applications
- Current Assignee / Owner
- Filing Date
- 2026-01-27
- Publication Date
- 2026-08-13
Smart Images
Figure EP2026051997_13082026_PF_FP_ABST
Abstract
Description
[0001] P97811
[0002] - 1 -
[0003] SENSOR DEVICES AND METHODS FOR PRODUCING THEREOF
[0004] Field
[0005] This present disclosure relates to large-scale sensor devices and methods for producing thereof .
[0006] Background
[0007] Sensors, in particular, flat panel X-ray imaging systems are integral tools in medical diagnostics and industrial testing. These systems typically consist of the following fundamental components :
[0008] 1. X-Ray Source (Tube) : This emits X-rays that penetrate the device under test (DUT) or the patient . The transmission of X-rays depends on the local density variations within the material, such as bones, metal, and liquids .
[0009] 2. Scintillator Material / component : X-rays that pass through the DUT or patient are absorbed by a scintillator material / component . The scintillator converts the X-rays into visible light through a process known as X-ray- induced luminescence .
[0010] 3. Large Area Photodetector : Light (e . g. , visible light) emitted by the scintillator is detected by a large-area photodetector segmented into individual pixels . These pixels capture the optical signals .
[0011] 4. Image Processing System: The signals from the pixel array are processed to generate an image . This image provides critical information about the internal structure of the DUT or patient .
[0012] Despite their widespread application and utility, sensors systems, e . g. , conventional flat panel X-ray imaging systems face significant challenges that limit their performance .P97811
[0013] Summary
[0014] The invention is set out in the appended set of claims .
[0015] Description
[0016] In the drawings, like reference characters generally refer to the same parts throughout the different views . The drawings are not necessarily to scale, emphasis instead generally being placed upon illustrating the principles of the disclosure . In the following description, various aspects of the disclosure are described with reference to the following drawings, in which :
[0017] FIG. 1 shows a cross-sectional view of an arrangement or assembly for electromagnetic detection according to one or more aspects of the present disclosure; FIG. 2 shows an electromagnetic radiation concentrator coupled to a semiconductor device according to one or more aspects of the present disclosure;
[0018] FIG. 3 shows a top cross-sectional view of the electromagnetic radiation concentrator shown in FIG. 2 ;
[0019] FIG. 4 shows cross-sectional view of a portion of an electromagnetic radiation concentrator according to one or more aspects of the present disclosure; and
[0020] FIG. 5 shows a flow diagram of a process for a producing an arrangement or assembly for electromagnetic detection according to one or more aspects of the present disclosure .
[0021] The following detailed description refers to the accompanying drawings that show, by way of illustration, specific details and aspects in which the disclosure may be practiced. One orP97811
[0022] more aspects are described in sufficient detail to enable those skilled in the art to practice the disclosure . Other aspects may be utilized and structural, logical, and electrical changes may be made without departing from the scope of the disclosure . The various aspects described herein are not necessarily mutually exclusive, as some aspects can be combined with one or more other aspects to form new aspects . Various aspects are described in connection with methods and various aspects are described in connection with devices . However, it may be understood that aspects described in connection with methods may similarly apply to the devices, and vice versa . Throughout the drawings, it should be noted that like reference numbers are used to depict the same or similar elements, features, and structures . That is, it should be understood that, for clarity and consistency, the same or similar reference numerals are used throughout the figures to denote the same or similar elements, components, or features . Variations of the embodiments may include different combinations of these elements, but the reference numerals will maintain their correspondence to the particular elements where applicable . Throughout the drawings, it should be noted that proportions are not necessary to scale and that the size of features may be emphasized for ease of illustration.
[0023] FIG. 1 shows a cross-sectional view of an exemplary arrangement or assembly for electromagnetic detection 100 according to an aspect of the present disclosure . The arrangement 100 includes semiconductor device 110. That is mounted on a board 105. The board can include electric interconnections . In one or more instances, the board 105 is a printed circuit board (PCB) , and can include with a backside redistribution layer .
[0024] The semiconductor device 110 includes an active-pixel array 120 of (active) pixels 125. In this case, the pixels 125 are be arranged a top or main surface 110a of the semiconductor device (see FIG. 2 ) . In one or more instances, each pixel 125P97811
[0025] - 4 -
[0026] are used as a photodetector and include an active component which provides a voltage or current depending on the response of the photodetector to incident radiation.
[0027] In at least one example, the semiconductor device 110 includes or comprises a semiconductor wafer with the active-pixel array 120 integrated in the wafer . The semiconductor wafer can be mono-crystalline, e . g. , mono-crystalline silicon.
[0028] The semiconductor wafer, for instance, has interconnect layers made of metal or poly-silicon.
[0029] Further, in one or more cases, the pixel array 120, specifically the active pixels 125 are realized as Complementary Metal-Oxide-Semiconductor (CMOS) image sensors . In other words, the pixels are formed using CMOS processes . For example, the pixel array 120 or pixels 125 may include NMOS and / or PMOS transistors . Each pixel 120 in the array may incorporate multiple transistors (e . g. , at least three) , with the total number of transistors per pixel potentially being limited to a specific amount .
[0030] In FIG. 1, the arrangement 100 includes an electromagnetic radiation concentrator 130. The electromagnetic radiation concentrator 130 is disposed on (e . g. , directly) or over the main surface 110a of the semiconductor device 110. The electromagnetic radiation concentrator 130 is configured to harvest, concentrate, and / or direct incident light onto the semiconductor device 110. FIG. 2 shows a more detailed view of an example of the electromagnetic radiation concentrator 130 .
[0031] Further, as shown in FIG. 1, the arrangement 110 includes an image readout circuit 150. The image readout circuit or circuitry 150 may be realized in various instances as one or a plurality of image readout chips .P97811
[0032] - 5 -
[0033] In the example of FIG. 1, the image readout circuit 150 is disposed or mounted on a lateral periphery area or portion of the main surface 110a of the semiconductor device 110. Further, the image readout circuit 150 is located laterally adj acent (e . g. , along a plane parallel to the XY plane) to the electromagnetic radiation concentrator 130.
[0034] The image readout circuit 150 is configured to process signals produced by the pixel array, e . g. , to generate or facilitate the generation of an image based on the incident electromagnetic radiation received by the arrangement 100.
[0035] The image readout circuit 150 (e . g. , one or more readout chips) are electrically connected or coupled to the semiconductor device 110. In at least one instance, solder balls and / or solder bumps 117 provide electrical connection ( s ) between the image readout circuit 150 and the semiconductor device . In other instances, electric connections between the semiconductor device 110 and the image readout circuit 150 are provided by wires instead. Wires can electrically connect the image readout circuit 150 to the one or more bond pads 113 (some not shown) of the semiconductor device 110. Bond pads on the board 5 may also be included for external connections .
[0036] FIG. 1 also shows that the electric connections 115 (e . g. , wire (s) ) can be provided to the electrical interconnections 107 of the board 5, from the semiconductor device 110. Other electrical connections may also be provided, e . g. , electrical connections between the board 5 and the image readout circuit 150 .
[0037] In at least one aspect, the arrangement 100 can optionally include a scintillator or scintillator component 140. For instance, as shown in of FIG. 1, scintillator component 140 is arranged or disposed on or over a top surface 130a of the electromagnetic radiation concentrator 130. The scintillatorcomponent 140 is configured to convert incident X-ray radiation 170 to light (e . g. , visible, near-visible, and / or infrared light) . In the arrangement 100, the scintillator component 140 is arranged so that the light it converts or generates from the X-ray radiation 170 is outputted to or towards the electromagnetic radiation concentrator 150.
[0038] As mentioned, the scintillator or scintillator component 140 is configured to emit light in response to absorbing high-energy radiation, e . g. , X-rays . The scintillator component 140 can include materials such as inorganic crystals (e . g. , sodium iodide, cesium iodide, and bismuth germanate) , organic compounds (e . g. , plastic or liquid scintillators based on aromatic hydrocarbons) , and / or ceramics (e . g. , gadolinium oxysulfide) . With the scintillator, the arrangement 100 may be or may be configured to operate as a X-ray imaging device .
[0039] In the example of FIG. 1, the scintillator component 140 is arranged so to extend over (e . g. , laterally) the top surface 150a of the image readout circuit 150. Further, in one or more instances, the top surface 150a of the image readout circuit 150 is arranged so as to be coplanar with the top surface 130a of the electromagnetic radiation concentrator 130.
[0040] FIG. 2 shows a more detailed cross-sectional side view of the electromagnetic radiation concentrator 130 together with the semiconductor device 110.
[0041] The concentrator 130 is provided with a plurality of through-holes 135. As shown in FIG. 2, the holes 135 extend through the concentrator 130, along the Z-direction. In particular, each of the holes 135 extend from a top surface 130a of the concentrator to a back surface 130b of the concentrator 130. The holes 135 have or define apertures . For example, the concentrator 130 is designed so that light 210 entering a hole 135 at a first or light incident aperture 133 exits the same hole 135 at its output aperture 137. More specifically, the- 7 -
[0042] hole is aligned so that the light 210 exiting the hole 135 at the output aperture 137 is directed onto the active pixel 125 of the semiconductor device 110. That is, each of the through-holes 135 is aligned so as to be over (e . g. , directly over from a top view perspective) a corresponding pixel 125. Such an alignment allows incident light 210 entering the through-hole to be concentrated and directed onto the corresponding pixel .
[0043] In the example of FIG. 2 the through-holes primarily extend in a vertical direction (e . g. , Z-direction) , from the top surface of the element to the back surface . In other cases, through-holes may be formed to extend obliquely, traversing from the top surface to the back surface at an angle rather than perpendicular to the surfaces . In such cases, light 210 still can be collected or harvested by the concentrator 130 via the holes 135 and directed onto the pixels 125 of the semiconductor device 110.
[0044] The light 210 can be from an external source or target, or can be generated by another component, e . g. , a scintillator component, e . g. , as shown in FIG. 1. The light 210 can be optical or visible or near-visible light and / or infrared or near-infrared light .
[0045] In short, the electromagnetic radiation concentrator is configured to direct, concentrate, and / or focus incident light 210 entering the light incident apertures 133 of its the through-holes 135 to exit the light output aperture 137 onto active pixel 125.
[0046] In one or more instances, sidewalls of the holes have reflective sidewalls 131. That is, the reflective sidewalls 131 are configured to reflect and redirect incident light off its exterior surface . The reflective sidewalls 131 facilitate the collecting and directing of light onto pixels 125- 8 -
[0047] In one or more instances, the reflective sidewalls 131 are realized or produced as a coated layer or layers . For example, the coated layer (s) can include one or more metals which may include aluminum, silver, gold chromium, and / or titanium.
[0048] In other instances, the coated layer (s) may include one or more dielectric materials or dielectric material stacks . The one or more dielectric materials or dielectric material stacks can include siliconoxide, alumiumoxide, siliconnitride, titantiumoxide, and / or magnesiumf louride .
[0049] The through-holes 135 of the electromagnetic radiation concentrator 130 are shaped and thus configured or designed to collect, concentrate, direct, and / or incident radiation (e . g. incoming light) .
[0050] In one or more instances, the through-holes 135 have a funnel or funnel-like shape from a side view. This shape, e . g. , the through-holes having angular sidewalls, is shown in the example of FIG. 2.
[0051] With the funnel or funnel-like shape, each of the through-holes 135 includes an incident aperture 133 that is larger in area (e . g. , measured in XY-plane) than its respective output aperture 137 .
[0052] In FIG. 2, the sidewalls 131 are planar from a side view. However, this is not necessarily so . That is, while the holes 135 may feature planar sidewalls 135, in some cases, the sidewalls may be piecewise angular, consisting of multiple planar segments . Yet in other instances, or implementations, the sidewalls may be curved or partially curved from a side view .
[0053] FIG. 3, shows a top cross-sectional view of the electromagnetic radiation concentrator 130. As shown in FIG.
[0054] 3, the through-holes 125 have a circular shape . That is, theP97811
[0055] light incident apertures 133 and the light output apertures 137 of the holes 135 have a circular shape, e . g. , from a top view facing the top surface (e . g. , in XY plane) of the electromagnetic radiation concentrator 130. However, this is not necessarily show as other shapes and in particular noncircular shapes may be realized. That is, the apertures can have an ellipsoidal shape or any suitable polygonal shape (e . g. , square, rectangular, etc . ) .
[0056] In at least one aspect of the present disclosure, the electromagnetic radiation concentrator 130 is realized as a structured substrate . More specifically, the substrate is a structured with the plurality of through-holes 135.
[0057] The (structured) substrate can be composed of or include any suitable material . In at least one example, the substrate may be a semiconductor substrate made of a semiconductor material . For instance, the substrate could be a silicon substrate, structured with through holes 135.
[0058] In other instances, the (structured) substrate can be made of or composed of glass, metal, and / or polymers .
[0059] Further, as shown in FIG. 2, the arrangement 100 can further include a metal interconnect 180 which can be used to electrically connect or couple the concentrator 130 to the semiconductor device 110.
[0060] According to at least one aspect of the present disclosure, the electromagnetic radiation concentrator 130 is bonded to the semiconductor device 110. For instance, an adhesive can be disposed or deposited in at least the through-holes 135 of the concentrator 130.
[0061] FIG. 4 shows a cross-sectional view of a portion of the concentrator 130. FIG. 4 shows one of the plurality of through-holes 135 of concentrator 130 has been filled with anP97811
[0062] - 10 -
[0063] adhesive 136. While in some cases, the adhesive 136, may completely or substantially fill the holes 135 of the concentrator, in other cases, the through-holes 135 may be partially filled with the adhesive 136.
[0064] The applied adhesive 136 is configured to bond the electromagnetic radiation concentrator 130 to the semiconductor device 110. Further the adhesive is optically transparent . Said differently, the adhesive can be transparent to a portion or all of visible light and / or infrared light .
[0065] FIG. 5 shows a flowchart for a method 500 for forming an arrangement for electromagnetic radiation detection. The method 500 or variations thereof, can be used for forming the arrangement 100 of FIG. 1, or for forming variations of the arrangement 100.
[0066] The method 500 includes, at 510, forming an electromagnetic radiation concentrator .
[0067] At 515, forming the electromagnetic radiation concentrator includes structuring a substrate by forming a plurality of through-holes in a substrate . The substrate structured or used for structuring can include one or more metal pads on a top surface of the substrate .
[0068] Further, in the structured substrate, each through-hole of the plurality of through-holes includes a light incident aperture at the top surface of the electromagnetic concentrator and a light output aperture at the bottom surface of the electromagnetic concentrator .
[0069] At 520, forming the electromagnetic radiation concentrator further includes forming reflective sidewalls by coating sidewalls of each of the plurality of through-holes .- Il ¬
[0070] At 530, the method 500 further includes attaching and electrically connecting the electromagnetic radiation concentrator to a semiconductor device, the semiconductor device comprising a pixel array of active pixels arranged at a main surface of the semiconductor device .
[0071] Further details or implementations regarding the method 500 are described.
[0072] in one or more cases, the electromagnetic radiation concentrator is attached to the semiconductor device so that each of the plurality of through-holes is respectively arranged and aligned over an active pixel of the pixel array so that incident light enters the light incident aperture through the through-hole and exits the light output aperture onto the active pixel
[0073] In at least one example, the sidewalls of each through-hole in the plurality can be coated using deposition processes such as chemical vapor deposition (CVD) , physical vapor deposition (PVD) , spray coating, galvanic plating, electroless plating, dip coating, or printing. The coating, such as the above mentioned deposition methods allow for the application of reflective dielectric materials and / or reflective metals, as described herein, to the sidewalls, forming a reflective coating layer .
[0074] In at least one aspect, for the method 500, the substrate is a semiconductor substrate (e . g. , a silicon substrate) . The formation the through-holes in the semiconductor substrate can be done by any suitable process or combination of processes . For instance, the through-hoes may be formed by performing chemical etching, laser etching, dry etching, mechanical drilling, micromachining, and / or a three-dimensional printing process on the semiconductor substrate .- 12 -
[0075] According to at least one other aspect, for the method 500, the substrate is a glass substrate . The formation of through through-holes can also be accomplished by any suitable process or combination of processes . For instance, forming the plurality of through-holes can include performing a Laser Induced Deep Etching (LIDE) process on the glass substrate .
[0076] In at least one example, the method 500 further includes, before attaching the substrate to the semiconductor device, performing an interconnection process . For example, electrical connects may be formed between components of the arrangement (e . g. , between semiconductor device and concentrator and / or image readout circuit) . For example, performing the interconnection process can include depositing conductive bumps on the metal pads at the top surface of the semiconductor device and depositing solder cap and / or solder balls on the conductive bumps .
[0077] According to at least one aspect the method 500 further includes, after performing the interconnection process, grinding the back surface of the substrate; and singulating the substrate into one or more units . Furthermore, for this at least one aspect attaching the substrate to a semiconductor device further includes attaching each of one of the units of the substrate to a respective semiconductor device . For example, attaching each of the units comprises performing a flip-chip pick and place process .
[0078] Further, for the method 500, in one or more instances, attaching the substrate to a semiconductor device further includes applying an underfill between the substrate and the semiconductor device .
[0079] Further, for the method 500, in one or more instances, the method 500 further includes, after attaching the substrate to the semiconductor device filling the plurality of through-holes with an adhesive bonding the substrate to theP97811
[0080] - 13 -
[0081] semiconductor device . As previously described herein, such an adhesive is transparent to light, e . g. , optical and / or infrared light .
[0082] The method 500 further includes in at least some aspects, mounting an image read-out circuit to a top surface of semiconductor device and forming an electrical connection between the image read-out circuit and the device so that the image read-out circuit receives signals output by the pixel array. The image read-out circuit can be mounted so that a top surface of the image read-out circuit is substantially co-planar with the top surface of the substrate of the electromagnetic radiation concentrator . Further, the 500 method can further include arranging a scintillator component on and over the top surface of the substrate of the electromagnetic radiation concentrator and the top surface of the image read-out circuit .
[0083] For the method 500, wherein the active pixels of the pixel array of the semiconductor device can be Complementary Metal-Oxide-Semiconductor (CMOS) image sensors .
[0084] The arrangements herein can overcome issues faced by other sensors . For instances, despite their widespread application and utility, conventional flat panel X-ray imaging systems face significant challenges that limit their performance . Two major issues addressed by the invention are as follows :
[0085] 1. Resolution Limitation Due to Scintillator Properties : The resolution of X-ray images is constrained by the scintillator material . Visible light emitted by the scintillator is isotropic, meaning it is emitted in all directions and lacks directional information about the stimulating X-ray beam. Furthermore, known scintillator materials scatter visible light, which further degrades optical resolution.
[0086] 2. Sensitivity Limitation Due to Pixel Fill-Factor : The photodetector array comprises pixels that have both photoactive areas (e . g. , photodiodes) and non-active areas (e . g. ,P97811
[0087] - 14 -
[0088] pixel circuitry or guard rings for electronic signal confinement) . The ratio of active to non-active areas, referred to as the fill-factor, is a critical parameter influencing optical sensitivity. A higher fill-factor allows for greater light harvesting. However, as pixel size decreases to achieve higher resolution and pixel density, the fillfactor inherently decreases . This results in reduced sensitivity due to a proportionally larger non-active area . The sensor arrangements described herein, e . g. , X-ray sensor arrangements or X-ray imaging devices can realize enhanced the resolution and sensitivity, thereby enabling more accurate and efficient imaging in both medical and industrial applications .
[0089] The following examples relate to further aspects of the present disclosure :
[0090] Example 1 is an arrangement for electromagnetic radiation detection including:
[0091] a semiconductor device comprising a pixel array of active pixels arranged at a main surface of the semiconductor device; and
[0092] an electromagnetic radiation concentrator disposed on the main surface of the semiconductor device, the electromagnetic radiation concentrator configured to concentrate incident light onto the semiconductor device; and
[0093] an image readout circuit disposed on a periphery of the main surface of the semiconductor device adj acent to the electromagnetic radiation concentrator and configured to process signals produced by the pixel array;
[0094] wherein the electromagnetic radiation concentrator comprises a substrate structured with a plurality of through-holes each extending from a top surface to a bottom surface of the electromagnetic radiation concentrator,
[0095] wherein each through-hole of the plurality of through-holes includes a light incident aperture at the top surface of the electromagnetic concentrator and a light output aperture at the bottom surface of the electromagnetic concentrator .P97811
[0096] - 15 -
[0097] Example 2 is the subj ect matter of Example 1, wherein the electromagnetic radiation concentrator is optionally disposed on the semiconductor device so that each of the plurality of through-holes is respectively arranged over an active pixel of the pixel array and is configured to concentrate and direct incident light entering the light incident aperture through the through-hole to exit the light output aperture onto the active pixel .
[0098] Example 3 is the subj ect matter of Example 1 or 2, wherein each the plurality of through-holes of the electromagnetic radiation concentrator optionally includes reflective sidewalls .
[0099] Example 4 is the subj ect matter of Example 3, wherein the reflective sidewalls optionally include a coated layer .
[0100] Example 5 is the subj ect matter of Example 4, wherein the coated layer optionally includes one or more metals .
[0101] Example 6 is the subj ect matter of Example 5, wherein the one or more metals optionally include aluminum, silver, gold chromium, and / or titanium.
[0102] Example 7 is the subj ect matter of any of Examples 4 to 6, wherein the coated layer optionally includes comprises one or more dielectric materials or dielectric material stacks .
[0103] Example 8 is the subj ect matter of Example 7, wherein the one or more dielectric materials or dielectric material stacks optionally include Siliconoxide, Alumiumoxide, Siliconnitride, Titantiumoxide, and / or Magnesiumf louride .
[0104] Example 9 is the subj ect matter of any of Examples 1 to 8, wherein the plurality through-holes of the electromagnetic radiation concentrator are optionally funnel-like shaped soP97811
[0105] - 16 -
[0106] that the light incident aperture is larger in area than the light output aperture, from a top view facing the top surface of the electromagnetic radiation concentrator .
[0107] Example 10 is the subj ect matter of any of Examples 1 to 9, wherein the plurality of through-holes of the electromagnetic radiation concentrator optionally have planar sidewalls from a side view cross-sectional perspective .
[0108] Example 11 is the subj ect matter of any of Examples 1 to 9, wherein the plurality of through-holes of the electromagnetic radiation concentrator optionally have curved sidewalls from a side view cross-sectional perspective .
[0109] Example 12 is the subj ect matter of any of Examples 1 to 11, wherein the light incident aperture and the light output aperture each optionally have a circular shape from a top view facing the top surface of the electromagnetic radiation concentrator .
[0110] Example 13 is the subj ect matter of any of Examples 1 to 11, wherein the light incident aperture and the light output aperture each optionally have a non-circular shape from a top view facing the top surface of the electromagnetic radiation concentrator .
[0111] Example 14 is the subj ect matter of Example 13, wherein the non-circular shape is optionally a polygonal shape .
[0112] Example 15 is the subj ect matter of any of Examples 1 to 14, which optionally further includes : a metal interconnect structure coupling the electromagnetic radiation concentrator to the semiconductor device .
[0113] Example 16 is the subj ect matter of any of Examples 1 to 15, wherein the substrate of the electromagnetic radiationP97811
[0114] - 17 -
[0115] concentrator is optionally a glass substrate structured with the plurality of through-holes .
[0116] Example 17 is the subj ect matter of any of Examples 1 to 15, wherein the substrate of the electromagnetic radiation concentrator is optionally a semiconductor substrate structured with the plurality of through-holes .
[0117] Example 18 is the subj ect matter of Example 17, wherein the substrate optionally includes semiconductor material, glass, metal, and / or polymers .
[0118] Example 19 is the subj ect matter of any of Examples 1 to 18, which further optionally include : an adhesive disposed within at least within the plurality of holes of the electromagnetic radiation concentrator, wherein the adhesive bonds the electromagnetic radiation concentrator to the semiconductor device .
[0119] Example 20 is the subj ect matter of Example 19, wherein the adhesive optionally substantially fills each of the plurality of through-holes .
[0120] Example 21 is the subj ect matter of Example 19 or 20, wherein the adhesive is optionally optically transparent to light .
[0121] Example 22 is the subj ect matter of any of Examples 1 to 21, which optionally further include : a scintillator component arranged on the top surface of the electromagnetic radiation concentrator and configured to convert incident X-ray radiation to light that is output to the electromagnetic radiation concentrator .
[0122] Example 23 is the subj ect matter of Example 22, wherein scintillator component optionally extends over a top surface of the image read out circuit, the top surface facing away from the semiconductor device .P97811
[0123] - 18 -
[0124] Example 24 is the subj ect matter of Example 23, wherein the top surface of the image read out circuit is optionally coplanar with the top surface of the electromagnetic radiation concentrator .
[0125] Example 25 is the subj ect matter of any of Examples 1 to 24, wherein the active pixels of the pixel array optionally are Complementary Metal-Oxide-Semiconductor (CMOS) image sensors .
[0126] Example 1A is a method for forming an arrangement for electromagnetic radiation detection, the method including: forming an electromagnetic radiation concentrator including:
[0127] forming a plurality of through-holes in a substrate, the substrate including one or more metal pads on a top surface of the substrate, wherein each through-hole of the plurality of through-holes includes a light incident aperture at the top surface of the electromagnetic concentrator and a light output aperture at the bottom surface of the electromagnetic concentrator;
[0128] forming reflective sidewalls by coating sidewalls of each of the plurality of through-holes;
[0129] attaching and electrically connecting the electromagnetic radiation concentrator to a semiconductor device, the semiconductor device comprising a pixel array of active pixels arranged at a main surface of the semiconductor device .
[0130] Example 2A is the subj ect matter of Example 1A, wherein the electromagnetic radiation concentrator is optionally attached to the semiconductor device so that each of the plurality of through-holes is respectively arranged and aligned over an active pixel of the pixel array so that incident light enters the light incident aperture through the through-hole and exits the light output aperture onto the active pixel .P97811
[0131] - 19 -
[0132] Example 3A is the subj ect matter of Example 1A or 2A, wherein coating sidewalls of each of the plurality of through-holes optionally includes performing a chemical vapor deposition (CVD) , physical vapor deposition (PVD) , spray coating, galvanic plating, electroless plating, dip coating, or printing
[0133] Example 4A is the subj ect matter of any of Examples 1A to 3A, wherein coating sidewalls of each of the plurality of through-holes optionally includes coating one or more reflective dielectric materials and / or one or more metals on the sidewalls .
[0134] Example 5A is the subj ect matter of any of Examples 1A to 4A, wherein the substrate optionally is a semiconductor substrate, and wherein forming the plurality of through-holes optionally includes performing chemical etching, laser etching, dry etching, mechanical drilling, micromachining, and / or a three-dimensional printing process on the semiconductor substrate .
[0135] Example 6A is the subj ect matter of any of Examples 1A to 4A, wherein the substrate is optionally a glass substrate, and wherein forming the plurality of through-holes optionally includes performing Laser Induced Deep Etching (LIDE) process on the glass substrate .
[0136] Example 7A is the subj ect matter of any of Examples 1A to 6A, which optionally further includes, before attaching the substrate to the semiconductor device, performing an interconnection process .
[0137] Example 8A is the subj ect matter of Example 7A, wherein performing the interconnection process optionally includes depositing conductive bumps on the metal pads at the top surface of the semiconductor device and depositing solder cap and / or solder balls on the conductive bumps .P97811
[0138] - 20 -
[0139] Example 9A is the subj ect matter of any of Examples 7A or 8A, which optionally further includes : after performing the interconnection process, grinding the back surface of the substrate; and singulating the substrate into one or more units ;
[0140] wherein attaching the substrate to a semiconductor device optionally further includes : attaching each of one of the units of the substrate to a respective semiconductor device .
[0141] Example 10A is the subj ect matter of Example 9A, wherein attaching each of the units optionally includes performing a flip-chip pick and place .
[0142] Example 11A is the subj ect matter of any of Examples 1A to 10A, wherein attaching the substrate to a semiconductor device optionally includes performing a reflow process .
[0143] Example 12A is the subj ect matter of Example 11A, wherein attaching the substrate to a semiconductor device further comprises applying an underfill between the substrate and the semiconductor device .
[0144] Example 13A is the subj ect matter of any of Examples 1A to 12A, which optionally further includes, after attaching the substrate to the semiconductor device filling the plurality of through-holes with an adhesive bonding the substrate to the semiconductor device .
[0145] Example 14A is the subj ect matter of Example 13A, wherein the adhesive is optionally optically transparent to light .
[0146] Example 15A is the subj ect matter of any of Examples 1A to 14A, which optionally further include : mounting an image read-out circuit to a top surface of semiconductor device and forming an electrical connection between the image read-outP97811
[0147] - 21 -
[0148] circuit and the device so that the image read-out circuit receives signals output by the pixel array.
[0149] Example 16A is the subj ect matter of Example 15A, wherein the image read-out circuit is optionally mounted so that a top surface of the image read-out circuit is substantially coplanar with the top surface of the substrate of the electromagnetic radiation concentrator .
[0150] Example 17A is the subj ect matter of Examples 16A, which may further include : arranging a scintillator component on and over the top surface of the substrate of the electromagnetic radiation concentrator and the top surface of the image readout circuit .
[0151] Example 18 is the subj ect matter of any of Examples 1A to 17A, wherein the active pixels of the pixel array optionally includes Complementary Metal-Oxide-Semiconductor (CMOS) image sensors .
[0152] Any of the aspects, examples, instances, and / or embodiments described herein may be suitable or appropriately combined including combined with the embodiments or examples described herein .
[0153] The word "exemplary" is used herein to mean "serving as an example, instance, or illustration." Any example or design described herein as "exemplary" is not necessarily to be construed as preferred or advantageous over other examples or designs .
[0154] For the purposes of the present disclosure, the phrase "A and / or B" means (A) , (B) , or (A and B) . For the purposes of the present disclosure, the phrase "A, B, and / or C" means (A) , (B) , (C) , (A and B) , (A and C) , (B and C) , or (A, B, and C) .P97811
[0155] - 22 -
[0156] Reference to "one embodiment" or " an embodiment" in the present disclosure means that a particular feature , structure , or characteristic described in connection with the embodiment is included in at least one embodiment . The appearances of the phrase " in one embodiment" or " in an embodiment" are not necessarily all referring to the same embodiment . The appearances of the phrase " for example , " " in an example , " or " in some examples" are not necessarily all referring to the same example .
[0157] The words "plurality" and "multiple" in the description or the claims expressly refer to a quantity greater than one . The terms "group ( of ) " , " set [ of ] " , "collection ( of ) " , " series (of ) " , " sequence ( of ) " , "grouping ( of ) " , etc . , and the like in the description or in the claims refer to a quantity equal to or greater than one , i . e . one or more . Any term expressed in plural form that does not expressly state "plurality" or "multiple" likewise refers to a quantity equal to or greater than one .
[0158] The term "connected" or "on" can be understood in the sense of a ( e . g . mechanical , optical and / or electrical ) , e . g . direct or indirect , connection and / or interaction . For example , several elements can be connected together mechanically such that they are physically retained ( e . g . , a plug connected to a socket ) and electrically such that they have an electrically conductive path ( e . g . , signal paths exist along a communicative chain) .
[0159] As used herein, unless otherwise speci fied the use of the ordinal adj ectives " first" , " second" , "third" etc . , to describe a common obj ect , merely indicate that di f ferent instances of like obj ects are being referred to , and are not intended to imply that the obj ects so described must be in a given sequence , either temporally, spatially, in ranking, or in any other manner .P97811
[0160] - 23 -
[0161] As utilized herein, terms "module" , "component, " "system, " "circuit, " "element, " "slice, " "circuitry, " and the like are intended to refer to a set of one or more electronic components, a computer-related entity, hardware, software (e . g. , in execution) , and / or firmware . For example, circuitry or a similar term can be a processor, a process running on a processor, a controller, an obj ect, an executable program, a storage device, and / or a computer with a processing device . By way of illustration, an application running on a server and the server can also be circuitry. One or more circuits can reside within the same circuitry, and circuitry can be localized on one computer and / or distributed between two or more computers . A set of elements or a set of other circuits can be described herein, in which the term "set" can be interpreted as "one or more . "
[0162] Such electric or electronic circuitry can be operated by a software application or a firmware application executed by one or more processors . The one or more processors can be internal or external to the apparatus and can execute at least a part of the software or firmware application. As yet another example, circuitry can be an apparatus that provides specific functionality through electronic components without mechanical parts; the electronic components can include one or more processors therein to execute executable instructions stored in computer readable storage medium and / or firmware that confer (s) , at least in part, the functionality of the electronic components . As another example, circuitry or similar term can be implemented in hardware such as application specific integrated circuit (ASIC) , programmable gate array (PGA) , discrete digital circuits, etc . ) or in a combination of hardware and software (e . g. , a software model executed by a corresponding processor) .
[0163] The term "semiconductor substrate" can mean any construction comprising semiconductor material, for example, a silicon substrate with or without an epitaxial layer, a silicon-on-P97811
[0164] - 24 -
[0165] insulator substrate containing a buried insulator layer, or a substrate with a silicon germanium layer .
[0166] A lateral direction is understood to mean a direction that runs, in particular, parallel to a main extension surface of the component, in particular of a layer . A vertical direction is understood to mean a direction that is oriented, in particular, perpendicular to the main extension surface of the component and / or layer . The vertical direction and the lateral direction are approximately orthogonal to each other .
[0167] Further, spatially relative terms, such as "beneath, " "below, " "lower, " "above, " "upper" and the like, may be used herein for ease of description to describe one element or feature ' s relationship to another element (s) or feature (s) as illustrated in the figures . The spatially relative terms are intended to encompass different orientations of the device in use or operation in addition to the orientation depicted in the figures . The apparatus may be otherwise oriented (rotated 90 degrees or at other orientations) and the spatially relative descriptors used herein may likewise be interpreted accordingly .
[0168] The term "data" as used herein may be understood to include information in any suitable analog or digital form, e . g. , provided as a file, a portion of a file, a set of files, a signal or stream, a portion of a signal or stream, a set of signals or streams, and the like . Further, the term "data" may also be used to mean a reference to information, e . g. , in form of a pointer . The term data, however, is not limited to the aforementioned examples and may take various forms and represent any information as understood in the art .
[0169] As used herein, a signal that is "indicative of" a value or other information may be a digital or analog signal that encodes or otherwise communicates the value or other information in a manner that can be decoded by and / or cause aP97811
[0170] - 25 -
[0171] responsive action in a component receiving the signal . The signal may be stored or buffered in computer readable storage medium prior to its receipt by the receiving component and the receiving component may retrieve the signal from the storage medium. Further, a "value" that is "indicative of" some quantity, state, or parameter may be physically embodied as a digital signal, an analog signal, or stored bits that encode or otherwise communicate the value .
[0172] Unless otherwise stated, the words "about" and "substantially" as used herein are to be construed as meaning the normal measuring and / or fabrication limitations related to the value or condition which the word "about" or "substantially" modifies . Unless expressly stated otherwise, the term "embodiment" is used herein to mean an embodiment of the present disclosure .
[0173] As used herein, a signal may be transmitted or conducted through a signal chain in which the signal is processed to change characteristics such as phase, amplitude, frequency, and so on. The signal may be referred to as the same signal even as such characteristics are adapted. In general, so long as a signal continues to encode the same information, the signal may be considered as the same signal . For example, a transmit signal may be considered as referring to the transmit signal in baseband, intermediate, and radio frequencies .
[0174] While the above descriptions and connected figures may depict device components as separate elements, skilled persons will appreciate the various possibilities to combine or integrate discrete features, functions into a single element . Such may include combining two or more components into a single component . Conversely, skilled persons will recognize the possibility to separate a single element into two or more discrete elements, such as splitting a single component into two or more separate components .P97811
[0175] - 26 -
[0176] It is appreciated that implementations of methods detailed herein are exemplary in nature, and are thus understood as capable of being implemented in a corresponding device . Likewise, it is appreciated that implementations of devices detailed herein are understood as capable of being implemented as a corresponding method. It is thus understood that a device corresponding to a method detailed herein may include one or more components configured to perform each aspect of the related method.
[0177] All acronyms defined in the above description additionally hold in all claims included herein.
[0178] While embodiments of the present disclosure have been described above, it is obvious that further embodiments may be implemented. For example, further embodiments may comprise any subcombination of features recited in the claims or any subcombination of elements described in the examples given above . Accordingly, this spirit and scope of the appended claims should not be limited to the description of the embodiments contained herein.
[0179] While the disclosure has been particularly shown and described with reference to specific embodiments, it should be understood by those skilled in the art that various changes in form and detail may be made therein without departing from the spirit and scope of the disclosure as defined by the appended claims . The scope of the disclosure is thus indicated by the appended claims and all changes which come within the meaning and range of equivalency of the claims are therefore intended to be embraced.P97811
[0180] - 27 -
[0181] Reference Numeral List
[0182] arrangment for electromagnetic detection
[0183] board
[0184] electrical interconnections
[0185] semiconductor device
[0186] a top / main surface of semiconductor device
[0187] solder bumps / solder balls
[0188] pixel array
[0189] indiviudual active pixel (s)
[0190] electromagnetic radiation concentrator
[0191] reflective sidewalls
[0192] a top surface of electromagnetic radiation concentrator b back surface of electromagnetic radiation concentrator incident aperture
[0193] through-holes
[0194] adhesive
[0195] output aperture
[0196] scintillator / scintillator component
[0197] image readout circuit
[0198] a top surface of image readout circuit
[0199] incident X-ray radiation
[0200] metal interconnect
[0201] incident light
Claims
P97811- 28 -CLAIMS1. An arrangement for electromagnetic radiation detection comprising :a semiconductor device comprising a pixel array of active pixels arranged at a main surface of the semiconductor device; andan electromagnetic radiation concentrator disposed on the main surface of the semiconductor device, the electromagnetic radiation concentrator configured to concentrate incident light onto the semiconductor device; and an image readout circuit disposed on a periphery of the main surface of the semiconductor device adj acent to the electromagnetic radiation concentrator and configured to process signals produced by the pixel array;wherein the electromagnetic radiation concentrator comprises a substrate structured with a plurality of through-holes each extending from a top surface to a bottom surface of the electromagnetic radiation concentrator,wherein each through-hole of the plurality of through-holes includes a light incident aperture at the top surface of the electromagnetic concentrator and a light output aperture at the bottom surface of the electromagnetic concentrator .
2. The arrangement of claim 1,wherein the electromagnetic radiation concentrator is disposed on the semiconductor device so that each of the plurality of through-holes is respectively arranged over an active pixel of the pixel array and is configured to concentrate and direct incident light entering the light incident aperture through the through-hole to exit the light output aperture onto the active pixel .
3. The arrangement of claim 1 or 2,wherein each the plurality of through-holes of the electromagnetic radiation concentrator includes reflective sidewalls .P97811- 29 -4. The arrangement of any of claims 1 to 3,wherein the plurality through-holes of the electromagnetic radiation concentrator are funnel-like shaped so that the light incident aperture is larger in area than the light output aperture, from a top view facing the top surface of the electromagnetic radiation concentrator .
5. The arrangement of any of claims 1 to 4, further comprising :a metal interconnect structure coupling the electromagnetic radiation concentrator to the semiconductor device .
6. The arrangement of any of claims 1 to 5,wherein the substrate of the electromagnetic radiation concentrator comprises a substrate structured with the plurality of through-holes .
7. The arrangement of any of claims 1 to 6, further comprising :an adhesive disposed within at least within the plurality of holes of the electromagnetic radiation concentrator,wherein the adhesive bonds the electromagnetic radiation concentrator to the semiconductor device .
8. The arrangement of claim 7,wherein the adhesive substantially fills each of the plurality of through-holes .
9. The arrangement of any of claims 1 to 8, further comprising :a scintillator component arranged on the top surface of the electromagnetic radiation concentrator and configured toP97811- 30 -convert incident X-ray radiation to light that is output to the electromagnetic radiation concentrator .
10. The arrangement of any of claims 1 to 9,wherein the active pixels of the pixel array comprise Complementary Metal-Oxide-Semiconductor (CMOS) image sensors .
11. A method for forming an arrangement for electromagnetic radiation detection, the method comprising:forming an electromagnetic radiation concentrator comprising :forming a plurality of through-holes in a substrate, the substrate including one or more metal pads on a top surface of the substrate, wherein each through-hole of the plurality of through-holes includes a light incident aperture at the top surface of the electromagnetic concentrator and a light output aperture at the bottom surface of the electromagnetic concentrator;forming reflective sidewalls by coating sidewalls of each of the plurality of through-holes;attaching and electrically connecting the electromagnetic radiation concentrator to a semiconductor device, the semiconductor device comprising a pixel array of active pixels arranged at a main surface of the semiconductor device,wherein the electromagnetic radiation concentrator is attached to the semiconductor device so that each of the plurality of through-holes is respectively arranged and aligned over an active pixel of the pixel array so that incident light enters the light incident aperture through the through-hole and exits the light output aperture onto the active pixel .
12. The method of claim 11,wherein coating sidewalls of each of the plurality of through-holes comprises performing a chemical vapor deposition (CVD) , physical vapor deposition (PVD) , sprayP97811- 31 -coating, galvanic plating, electroless plating, dip coating, or printing13. The method of any of claims 11 to 12,wherein coating sidewalls of each of the plurality of through-holes comprises coating one or more reflective dielectric materials and / or one or more metals on the sidewalls .
14. The method of any of claims 11 to 13,wherein the substrate is a semiconductor substrate, and wherein forming the plurality of through-holes comprises performing chemical etching, laser etching, dry etching, mechanical drilling, micromachining, and / or a three-dimensional printing process on the semiconductor substrate .
15. The method of any of claims 11 to 13,wherein the substrate is a glass substrate, andwherein forming the plurality of through-holes comprises performing Laser Induced Deep Etching (LIDE) process on the glass substrate .
16. The method of any of claims 11 to 15, further comprising before attaching the substrate to the semiconductor device, performing an interconnection process .
17. The method of claim 16, further comprising:after performing the interconnection process, grinding the back surface of the substrate; andsingulating the substrate into one or more units; wherein attaching the substrate to a semiconductor device further comprisesattaching each of one of the units of the substrate to a respective semiconductor device .
18. The method of any of claims 11 to 17, further comprisingP97811- 32 -after attaching the substrate to the semiconductor device filling the plurality of through-holes with an adhesive bonding the substrate to the semiconductor device .
19. The method of any of claims 11 to 18, further comprising :mounting an image read-out circuit to a top surface of semiconductor device and forming an electrical connection between the image read-out circuit and the device so that the image read-out circuit receives signals output by the pixel array; andarranging a scintillator component on and over the top surface of the substrate of the electromagnetic radiation concentrator and the top surface of the image read-out circuit .
20. The method of any of claims 1 to 19,wherein the active pixels of the pixel array comprise Complementary Metal-Oxide-Semiconductor (CMOS) image sensors .