Photosensitive element, production method therefor, resist pattern production method, and conductive pattern production method
Patent Information
- Authority / Receiving Office
- WO · WO
- Patent Type
- Applications
- Current Assignee / Owner
- Filing Date
- 2025-02-07
- Publication Date
- 2026-08-13
Smart Images
Figure JP2025004138_13082026_PF_FP_ABST
Abstract
Description
Photosensitive Element, Method for Producing the Same, Method for Producing a Resist Pattern, and Method for Producing a Conductor Pattern
[0001] The present disclosure relates to a photosensitive element, a method for producing the same, a method for producing a resist pattern, a method for producing a conductor pattern, and the like.
[0002] In the production of a wiring board or the like, a resist pattern is formed in order to obtain a desired conductor pattern (for example, a wiring pattern). For example, the resist pattern can be formed by disposing a photosensitive resin film on a substrate using a photosensitive element including the photosensitive resin film and then exposing and developing the photosensitive resin film. Such a photosensitive element can be stored with the photosensitive resin film sandwiched between two films (for example, a support film and a protective film) (see Patent Document 1 below).
[0003] Japanese Unexamined Patent Application Publication No. 2017-126023, Japanese Unexamined Patent Application Publication No. 2022-129979, Japanese Unexamined Patent Application Publication No. 2020-76871, Japanese Unexamined Patent Application Publication No. 2017-198919
[0004] For the photosensitive element, there may be a case where it is required to include a thick photosensitive resin film (for example, a photosensitive resin film of 80 μm or more) in order to obtain a thick conductor pattern. For such a photosensitive element including a thick photosensitive resin film, when these films are pressed with the photosensitive resin film sandwiched between two films, excellent adhesion between the photosensitive resin film and the film in contact with the photosensitive resin film may be required.
[0005] One aspect of the present disclosure aims to provide a photosensitive element having excellent adhesion between a photosensitive resin film and a film in contact with the photosensitive resin film. Another aspect of the present disclosure aims to provide a method for producing such a photosensitive element. Another aspect of the present disclosure aims to provide a method for producing a resist pattern using such a photosensitive element. Another aspect of the present disclosure aims to provide a method for producing a conductor pattern using such a method for producing a resist pattern.
[0006] This disclosure relates to the following [1] to
[12] etc. [1] A photosensitive element comprising a first film, a photosensitive resin film disposed on the first film, and a second film disposed on the photosensitive resin film, wherein at least one of the first film and the second film is a polypropylene film with an average thickness of 30 μm or more that is in contact with the photosensitive resin film, and the average thickness of the photosensitive resin film is 80 μm or more. [2] The photosensitive element according to [1], wherein the average thickness of the photosensitive resin film is 80 to 300 μm. [3] The photosensitive element according to [1] or [2], wherein the photosensitive resin film has positive-type photosensitivity. [4] The photosensitive element according to any one of [1] to [3], wherein the average thickness of the polypropylene film is 30 to 100 μm. [5] The photosensitive element according to any one of [1] to [3], wherein the average thickness of the polypropylene film is 40 to 100 μm. [6] The photosensitive element according to any one of [1] to [5], wherein the side of the polypropylene film facing the photosensitive resin film is corona treated. [7] A method for manufacturing a photosensitive element according to any one of [1] to [6], comprising the steps of: forming a photosensitive resin film by applying a photosensitive resin composition onto the first film and then drying the photosensitive resin composition; and arranging the second film on the photosensitive resin film. [8] The method for manufacturing a photosensitive element according to [7], further comprising the step of pressurizing a laminate comprising the first film, the photosensitive resin film and the second film while the polypropylene film is positioned vertically above the photosensitive resin film.[9] A method for manufacturing a resist pattern, comprising in this order: a placement step of placing the photosensitive resin film of a photosensitive element according to any one of [1] to [6] on the substrate, with one of the first film and the second film removed and the photosensitive resin film positioned on the substrate side relative to the other of the first film and the second film; an exposure step of exposing a part of the photosensitive resin film; and a developing step of removing at least a part of either the exposed part or the unexposed part of the photosensitive resin film to form a resist pattern.
[10] The method for manufacturing a resist pattern according to [9], further comprising a step of heating the photosensitive resin film with the other film removed between the placement step and the exposure step.
[11] The method for manufacturing a resist pattern according to [9] or
[10] , further comprising a step of heating the photosensitive resin film between the exposure step and the developing step.
[12] A method for manufacturing a conductor pattern, comprising a step of forming a conductor pattern using the resist pattern obtained by the method for manufacturing a resist pattern according to any one of [9] to
[11] as a mask.
[0007] According to one aspect of this disclosure, a photosensitive element having excellent adhesion between a photosensitive resin film and a film in contact with the photosensitive resin film can be provided. According to another aspect of this disclosure, a method for manufacturing such a photosensitive element can be provided. According to another aspect of this disclosure, a method for manufacturing a resist pattern using such a photosensitive element can be provided. According to yet another aspect of this disclosure, a method for manufacturing a conductor pattern using such a resist pattern manufacturing method can be provided.
[0008] This is a schematic cross-sectional view showing an example of a photosensitive element. This is a schematic cross-sectional view showing an example of a resist pattern manufacturing method. This is a schematic cross-sectional view showing an example of a resist pattern manufacturing method. This is a schematic cross-sectional view showing an example of a conductor pattern manufacturing method.
[0009] The embodiments of this disclosure will be described in detail below. However, this disclosure is not limited to the embodiments described below.
[0010] In this specification, numerical ranges indicated using "~" represent a range that includes the numbers before and after "~" as the minimum and maximum values, respectively. "A or greater" in a numerical range means A and the range exceeding A. "A or less" in a numerical range means A and the range less than A. In numerical ranges described stepwise in this specification, the upper or lower limit of a numerical range in one step can be arbitrarily combined with the upper or lower limit of a numerical range in another step. In numerical ranges described in this specification, the upper or lower limit of that numerical range may be replaced with the values shown in the examples. "A or B" means that either A or B may be included, or both may be included. Unless otherwise specified, the materials exemplified in this specification may be used individually or in combination of two or more. The content of each component in a composition means the total amount of multiple substances present in the composition if there are multiple substances corresponding to each component in the composition, unless otherwise specified. The term "layer" includes not only structures formed on the entire surface when observed as a plan view, but also structures formed on only a part of it. The term "process" includes not only independent processes but also any process that is not clearly distinguishable from others, as long as its intended function is achieved. "(Meth)acrylic" means at least one of acrylic and its corresponding methacrylic. Unless otherwise specified, alkyl groups may be linear, branched, or cyclic.
[0011] The photosensitive element according to this embodiment comprises a first film, a photosensitive resin film disposed on the first film, and a second film disposed on the photosensitive resin film, wherein at least one of the first film and the second film is a polypropylene film with an average thickness of 30 μm or more that is in contact with the photosensitive resin film (hereinafter, a polypropylene film with an average thickness of 30 μm or more is referred to as "polypropylene film A"), and the average thickness of the photosensitive resin film is 80 μm or more.
[0012] According to the inventor's findings, when a thick photosensitive resin film (for example, a photosensitive resin film of 80 μm or more) is sandwiched between two films and these films are subjected to pressure (e.g., heat and pressure), the films may lift (lift from the edges), wrinkle, etc., and excellent adhesion between the photosensitive resin film and the film in contact with the photosensitive resin film may not be obtained.
[0013] On the other hand, according to the photosensitive element according to this embodiment, since at least one of the first film and the second film is a polypropylene film A in contact with the photosensitive resin film, when these films are pressed (e.g., heated and pressed: 70°C, etc.) with the photosensitive resin film sandwiched between the first film and the second film, excellent adhesion between the photosensitive resin film and the film in contact with the photosensitive resin film can be obtained. For example, according to the photosensitive element according to this embodiment, when these films are pressed (e.g., heated and pressed: 70°C, etc.) with the polypropylene film A positioned vertically above the photosensitive resin film, excellent adhesion between the photosensitive resin film and the film in contact with the photosensitive resin film can be obtained. According to the photosensitive element according to this embodiment, in the evaluation of the adhesion of the protective film in the [Examples] described later, a result of "A" or "B" can be obtained, for example. At least one of the first film and the second film is a polypropylene film A in contact with the photosensitive resin film, and the polypropylene film A has rigidity, adhesion, heat shrinkage rate, etc. that optimize adhesion, so it is presumed that when the first film and the second film are pressed (e.g., heated and pressed) with the photosensitive resin film sandwiched between them, excellent adhesion between the photosensitive resin film and the film in contact with the photosensitive resin film can be obtained. However, the factors are not limited to the above.
[0014] According to one embodiment of the photosensitive element of this embodiment, a high peel strength (high adhesion strength) can be obtained for the polypropylene film A in a 90° peel test. According to one embodiment of the photosensitive element of this embodiment, in the 90° peel test in the [Examples] described below, a value of 0.014 N or higher (preferably 0.015 N or higher, 0.018 N or higher, 0.020 N or higher, 0.025 N or higher, etc.) can be obtained.
[0015] The photosensitive element according to this embodiment can be used in the manufacture of resist patterns, in the manufacture of conductor patterns, and in the manufacture of wiring boards.
[0016] The photosensitive element according to this embodiment comprises a first film, a photosensitive resin film (photosensitive layer) disposed on the first film, and a second film disposed on the photosensitive resin film. That is, the photosensitive element according to this embodiment comprises the first film, the photosensitive resin film, and the second film in this order. The photosensitive element according to this embodiment also comprises a first film, a second film, and a photosensitive resin film disposed between the first film and the second film. The first film can come into contact with the photosensitive resin film. The second film can come into contact with the photosensitive resin film.
[0017] At least one of the first film and the second film is a polypropylene film A (a polypropylene film with an average thickness of 30 μm or more) in contact with the photosensitive resin film. The photosensitive element according to this embodiment may be configured such that both the first film and the second film are polypropylene films A in contact with the photosensitive resin film, or it may be configured such that only one of the first film and the second film is a polypropylene film A in contact with the photosensitive resin film.
[0018] Polypropylene film A is a film containing polypropylene. The polypropylene content in polypropylene film A may be 50% by mass or more, more than 50% by mass, 60% by mass or more, 70% by mass or more, 80% by mass or more, 90% by mass or more, 93% by mass or more, 95% by mass or more, 98% by mass or more, or 99% by mass or more, based on the total mass of polypropylene film A. Polypropylene film A may be substantially composed of polypropylene (a configuration in which substantially 100% by mass of polypropylene film A is polypropylene). As polypropylene film A, biaxially oriented polypropylene (OPP) film, unoriented polypropylene (CPP) film, etc. can be used.
[0019] The side of the polypropylene film A facing the photosensitive resin film may be corona-treated from the viewpoint of easily obtaining excellent adhesion between the photosensitive resin film and the film in contact with the photosensitive resin film, or from the viewpoint of easily increasing the peeling force in the 90° peel test. By corona-treating the polypropylene film A, these effects can be obtained without changing the surface roughness. By corona-treating the side of the polypropylene film A facing the photosensitive resin film, the photosensitive element according to this embodiment may have a peeling force of 1100 N or more, 1200 N or more, 1300 N or more, 1400 N or more, or 1500 N or more when the adhesive tape is pulled at a peeling speed of 300 mm / min and a peeling angle of 180° with the adhesive tape attached to the polypropylene film A (the side of the polypropylene film A opposite to the photosensitive resin film) of the photosensitive element (50 mm vertical x 125 mm horizontal). Such peeling force can be obtained by the 180° tape peel test described in the [Examples] below, and can be obtained using a tensile testing machine (for example, Kyowa Interface Science Co., Ltd., product name "VPA-H100").
[0020] The average thickness of polypropylene film A is 30 μm or more, from the viewpoint of obtaining excellent adhesion between the photosensitive resin film and the film in contact with the photosensitive resin film. The average thickness of polypropylene film A may be 31 μm or more, 32 μm or more, 33 μm or more, 34 μm or more, 35 μm or more, 36 μm or more, 37 μm or more, 38 μm or more, 39 μm or more, or 40 μm or more, from the viewpoint of easily obtaining excellent adhesion between the photosensitive resin film and the film in contact with the photosensitive resin film, or from the viewpoint of easily increasing the peel strength in the 90° peel test. The average thickness of polypropylene film A may be 100 μm or less, 90 μm or less, 80 μm or less, 75 μm or less, 70 μm or less, 65 μm or less, 60 μm or less, 55 μm or less, 50 μm or less, 48 μm or less, 45 μm or less, 42 μm or less, 40 μm or less, 39 μm or less, 38 μm or less, 37 μm or less, 36 μm or less, or 35 μm or less, from the viewpoint of making it easy to roll the photosensitive element or to reduce wear on the blade when cutting the photosensitive element. From these viewpoints, the average thickness of polypropylene film A may be 30 to 100 μm, 30 to 80 μm, 30 to 50 μm, 35 to 100 μm, 35 to 80 μm, 35 to 50 μm, 40 to 100 μm, 40 to 80 μm, or 40 to 50 μm. The average thickness of polypropylene film A can be measured by the measurement method described in the [Examples] section below.
[0021] If only one of the first and second films is a polypropylene film A that is in contact with a photosensitive resin film, the other film may or may not be in contact with the photosensitive resin film. If only one of the first and second films is a polypropylene film A that is in contact with a photosensitive resin film, the other film may or may not be a polypropylene film A. Examples of films that do not fall under the category of polypropylene film A include polyolefin films such as polyethylene (PE) film and polypropylene (PP) film with an average thickness of less than 30 μm; and polyester films such as polyethylene terephthalate (PET) film, polybutylene terephthalate (PBT) film, and polyethylene-2,6-naphthalate (PEN) film.
[0022] If only one of the first and second films is polypropylene film A, the average thickness of the other film may be within the following ranges. The average thickness of the other film may be 1 μm or more, 5 μm or more, 10 μm or more, 15 μm or more, 20 μm or more, 25 μm or more, 30 μm or more, 35 μm or more, 40 μm or more, 45 μm or more, or 50 μm or more, from the viewpoint of easily suppressing damage to the film when peeling it from the photosensitive element. The average thickness of the other film may be 100 μm or less, 90 μm or less, 80 μm or less, 70 μm or less, 65 μm or less, 60 μm or less, 55 μm or less, or 50 μm or less, from the viewpoint of easily winding the photosensitive element into a roll, or from the viewpoint of easily suppressing wear of the blade when cutting the photosensitive element. From these perspectives, the average thickness of the other film may be 1 to 100 μm, 10 to 100 μm, 40 to 100 μm, 1 to 80 μm, 10 to 80 μm, 40 to 80 μm, 1 to 60 μm, 10 to 60 μm, or 40 to 60 μm. The average thickness of the other film can be measured by the measurement method described in the [Examples] below.
[0023] The photosensitive resin film is a film containing a photosensitive resin composition, and may be a film made of a photosensitive resin composition. The photosensitive resin film may have positive-type photosensitivity or negative-type photosensitivity. That is, the photosensitive resin composition of the photosensitive resin film may be a positive-type photosensitive resin composition or a negative-type photosensitive resin composition.
[0024] The photosensitive resin composition may contain a resin having an acid-dissociable group. The resin having an acid-dissociable group is not particularly limited as long as it is a resin that can be used in a positive-type photosensitive resin composition. Examples of resins having an acid-dissociable group include novolac resins having an acid-dissociable group, hydroxystyrene resins having an acid-dissociable group, and (meth)acrylic resins having an acid-dissociable group. The resin having an acid-dissociable group can be used alone or in combination of two or more.
[0025] Acid-dissociable groups can generate alkali-soluble groups (carboxyl groups, phenolic hydroxyl groups, etc.) through the action of acid. Examples of acid-dissociable groups include alkyl groups, alkoxyalkyl groups, alkoxycarbonyl groups, vinyloxyethyl groups, tetrahydropyranyl groups, tetrahydrofuranyl groups, and trialkylsilyl groups. Examples of alkyl groups include methyl groups, ethyl groups, propyl groups, isopropyl groups, n-butyl groups, isobutyl groups, tert-butyl groups, pentyl groups, isopentyl groups, neopentyl groups, cyclopentyl groups, and cyclohexyl groups. Examples of alkoxyalkyl groups include methoxyethyl groups, ethoxyethyl groups, n-propoxyethyl groups, isopropoxyethyl groups, n-butoxyethyl groups, isobutoxyethyl groups, tert-butoxyethyl groups, cyclohexyloxyethyl groups, methoxypropyl groups, ethoxypropyl groups, and 1-methoxy-1-methylmethoxyethyl groups. Examples of alkoxycarbonyl groups include tert-butoxycarbonyl group and tert-butoxycarbonylmethyl group. Examples of trialkylsilyl groups include trimethylsilyl group and tri-tert-butyldimethylsilyl group.
[0026] Resins having acid-dissociable groups may include resins described in the above-mentioned Patent Documents 2 to 4, etc. (for example, resins whose solubility in alkalis increases due to the action of acid).
[0027] The photosensitive resin composition may contain a photoacid generator. The photoacid generator comprises one or more compounds that generate acid upon exposure to light (e.g., ultraviolet light) and can function as a photosensitive agent in the photosensitive resin composition. The acid generated from the photoacid generator upon absorption of light can selectively increase the solubility in alkaline aqueous solutions in the light-irradiated portion of the photosensitive resin composition.
[0028] The photoacid generator is not particularly limited as long as it is a compound that generates acid directly or indirectly upon exposure to light. The compounds constituting the photoacid generator may be selected from compounds commonly used as photoacid generators. Examples of photoacid generators include onium salt compounds, halogen-containing triazine compounds, diazoketone compounds, sulfonic acid compounds, sulfonimide compounds, and diazomethane compounds. The photoacid generator can be used individually or in combination of two or more.
[0029] Examples of onium salt compounds include iodonium salt compounds such as diaryliodonium salts; sulfonium salt compounds such as triarylsulfonium salts; diazonium salt compounds such as aryldiazonium salts; phosphonium salt compounds; and pyridinium salt compounds.
[0030] Examples of halogen-containing triazine compounds include s-triazine derivatives such as phenyl-bis(trichloromethyl)-s-triazine, 4-methoxyphenyl-bis(trichloromethyl)-s-triazine, styryl-bis(trichloromethyl)-s-triazine, and naphthyl-bis(trichloromethyl)-s-triazine.
[0031] Examples of diazoketone compounds include 1,3-diketo-2-diazo compounds, diazobenzoquinone compounds, and diazonaphthoquinone compounds.
[0032] Examples of sulfonic acid compounds include benzoin p-toluenesulfonate, pyrogallol trifluoromethanesulfonate, o-nitrobenzyl trifluoromethanesulfonate, and o-nitrobenzyl p-toluenesulfonate.
[0033] Examples of sulfonimide compounds include N-(trifluoromethylsulfonyloxy)succinimide, N-(trifluoromethylsulfonyloxy)phthalimide, N-(trifluoromethylsulfonyloxy)diphenylmaleimide, N-(trifluoromethylsulfonyloxy)bicyclo[2.2.1]hept-5-ene-2,3-dicarboximide, N-(trifluoromethylsulfonyloxy)naphthalimide, N-(p-toluenesulfonyloxy)-1,8-naphthalimide, and N-(10-camphorsulfonyloxy)-1,8-naphthalimide.
[0034] Examples of diazomethane compounds include bis(trifluoromethylsulfonyl)diazomethane, bis(cyclohexylsulfonyl)diazomethane, and bis(phenylsulfonyl)diazomethane.
[0035] The photoacid generator may include compounds described in the above-mentioned Patent Documents 2 to 4, etc. (for example, compounds that generate acid upon irradiation with active light or radiation).
[0036] The content of the photoacid generator may be within the following ranges per 100 parts by mass of the resin having an acid-dissociable group: The content of the photoacid generator may be 0.01 parts by mass or more, 0.05 parts by mass or more, 0.1 parts by mass or more, or 0.2 parts by mass or more. The content of the photoacid generator may be 1.0 part by mass or less, 0.9 parts by mass or less, or 0.8 parts by mass or less. From these viewpoints, the content of the photoacid generator may be 0.01 to 1.0 parts by mass, 0.05 to 0.9 parts by mass, 0.1 to 0.9 parts by mass, or 0.2 to 0.8 parts by mass.
[0037] The photosensitive resin composition may contain an organic solvent. In the photosensitive element according to this embodiment, the organic solvent may be present within the photosensitive resin film. Examples of organic solvents include acetate solvents, ether solvents, ester solvents, alcohol solvents, sulfoxide solvents, formamide solvents, acetamide solvents, pyrrolidone solvents, aromatic hydrocarbon solvents, and the like. The organic solvent can be used individually or in combination of two or more.
[0038] The photosensitive resin composition may contain an acetate-based solvent, from the viewpoint of easily adjusting the content of organic solvents in the photosensitive resin film by drying the photosensitive resin composition. In the photosensitive element according to this embodiment, the acetate-based solvent may be present in the photosensitive resin film. Examples of acetate-based solvents include alkylene glycol monoalkyl ether acetate, dialkylene glycol alkyl ether acetate, alkoxyalkyl acetate (for example, alkoxybutyl acetate such as 3-methoxybutyl acetate (MBA)), 3-methoxy-3-methylbutyl acetate, propylene glycol diacetate, 1,3-butylene glycol diacetate, 1,4-butanediol diacetate, 1,6-hexanediol diacetate, cyclohexanol acetate, and butyl acetate. Examples of alkylene glycol monoalkyl ether acetates include propylene glycol monomethyl ether acetate (PGMEA), propylene glycol monoethyl ether acetate, propylene glycol monobutyl ether acetate, and other propylene glycol monoalkyl ether acetates; and ethylene glycol monoalkyl ether acetates such as ethylene glycol monomethyl ether acetate, ethylene glycol monoethyl ether acetate, and ethylene glycol monobutyl ether acetate. Examples of dialkylene glycol alkyl ether acetates include dipropylene glycol monoalkyl ether acetates such as dipropylene glycol monomethyl ether acetate, dipropylene glycol monoethyl ether acetate, and dipropylene glycol monobutyl ether acetate; and diethylene glycol monoalkyl ether acetates such as diethylene glycol monomethyl ether acetate, diethylene glycol monoethyl ether acetate, and diethylene glycol monobutyl ether acetate.
[0039] The photosensitive resin composition may contain at least one selected from the group consisting of alkylene glycol monoalkyl ether acetate and alkoxyalkyl acetate, and may also contain at least one selected from the group consisting of propylene glycol monomethyl ether acetate and 3-methoxybutyl acetate, from the viewpoint of easily adjusting the content of organic solvents in the photosensitive resin film by drying the photosensitive resin composition. The photosensitive resin composition may contain alkoxyalkyl acetate and may also contain 3-methoxybutyl acetate, from the viewpoint of easily obtaining excellent adhesion between the photosensitive resin film and the film in contact with the photosensitive resin film.
[0040] In the photosensitive element according to this embodiment, from the viewpoint of easily adjusting the content of organic solvents in the photosensitive resin film, at least one selected from the group consisting of alkylene glycol monoalkyl ether acetate and alkoxyalkyl acetate may be present in the photosensitive resin film, and at least one selected from the group consisting of propylene glycol monomethyl ether acetate and 3-methoxybutyl acetate may be present in the photosensitive resin film. In the photosensitive element according to this embodiment, from the viewpoint of easily improving the uniformity of the thickness of the photosensitive resin film, or from the viewpoint of easily adjusting the content of organic solvents in the photosensitive resin film, alkoxyalkyl acetate may be present in the photosensitive resin film, and 3-methoxybutyl acetate may be present in the photosensitive resin film.
[0041] The photosensitive resin composition may contain an organic solvent having a boiling point (boiling point at atmospheric pressure) within the following range (for example, an organic solvent with a boiling point of less than 150°C), from the viewpoint of easily adjusting the content of the organic solvent in the photosensitive resin film by drying the photosensitive resin composition. In the photosensitive element according to this embodiment, an organic solvent having a boiling point (boiling point at atmospheric pressure) within the following range (for example, an organic solvent with a boiling point of less than 150°C) may be present in the photosensitive resin film, from the viewpoint of easily adjusting the content of the organic solvent in the photosensitive resin film. The boiling point of the organic solvent may be 100°C or higher, 110°C or higher, 120°C or higher, 130°C or higher, 140°C or higher, 150°C or higher, 160°C or higher, or 170°C or higher. The boiling point of the organic solvent may be 200°C or lower, 190°C or lower, 180°C or lower, 170°C or lower, 160°C or lower, 150°C or lower, less than 150°C, 149°C or lower, 148°C or lower, 147°C or lower, or 146°C or lower. From these viewpoints, the boiling point of the organic solvent may be 100-200°C, 100-180°C, 100-160°C, 100°C or higher and less than 150°C, 130-200°C, 130-180°C, 130-160°C, 130°C or higher and less than 150°C, 140-200°C, 140-180°C, 140-160°C, 140°C or higher and less than 150°C, 150-200°C, or 150-180°C.
[0042] The content of organic solvents with a boiling point (boiling point at atmospheric pressure) of less than 150°C may be 50.0% by mass or more, more than 50.0% by mass, 60.0% by mass or more, 70.0% by mass or more, 80.0% by mass or more, 90.0% by mass or more, 93.0% by mass or more, 95.0% by mass or more, 98.0% by mass or more, 99.0% by mass or more, 99.5% by mass or more, or 99.9% by mass or more, based on the total mass of organic solvents contained in the photosensitive resin composition or the total mass of organic solvents present in the photosensitive resin film. The organic solvents contained in the photosensitive resin composition or the organic solvents present in the photosensitive resin film may be substantially composed of organic solvents with a boiling point of less than 150°C (a configuration in which substantially 100% by mass of the organic solvents contained in the photosensitive resin composition or the organic solvents present in the photosensitive resin film are organic solvents with a boiling point of less than 150°C). From a similar perspective, the group of compounds included in organic solvents with a boiling point (boiling point at atmospheric pressure) of less than 150°C, or the content of such compounds (for example, the content of alkoxyalkyl acetate, 3-methoxybutyl acetate, etc.), may also be within the ranges described above. The type and content of organic solvents present in the photosensitive resin film can be confirmed by gas chromatography.
[0043] The content of an organic solvent having a boiling point (boiling point under atmospheric pressure) of less than 150°C may be within the following ranges based on the total mass of the photosensitive resin film. The content of the organic solvent may be 1% by mass or more, 3% by mass or more, 5% by mass or more, 8% by mass or more, 10% by mass or more, 12% by mass or more, 14% by mass or more, 15% by mass or more, or 16% by mass or more. The content of the organic solvent may be 50% by mass or less, 40% by mass or less, 35% by mass or less, 30% by mass or less, 25% by mass or less, 23% by mass or less, 20% by mass or less, 18% by mass or less, or 17% by mass or less. The content of the organic solvent may be 1 to 50% by mass, 1 to 30% by mass, 1 to 20% by mass, 10 to 50% by mass, 10 to 30% by mass, 10 toThe photosensitive element according to this embodiment may include a support layer (support film), a protective layer (protective film), a cushion layer, an adhesive layer, a light absorption layer, a gas barrier layer, and the like. The photosensitive element according to this embodiment may be in a mode in which one of the first film and the second film is a support film and the other of the first film and the second film is a protective film. The photosensitive element according to this embodiment may include the above-described layers as films other than the first film and the second film.
[0046] FIG. 1 is a schematic cross-sectional view showing an example of a photosensitive element. The photosensitive element 10 in FIG. 1 includes a support film (first film) 12, a photosensitive resin film 14 disposed on the support film 12, and a protective film (second film) 16 disposed on the photosensitive resin film 14. At least one of the support film 12 and the protective film 16 is a polypropylene film A (a polypropylene film having an average thickness of 30 μm or more) that contacts the photosensitive resin film 14, and the average thickness of the photosensitive resin film 14 is 80 μm or more. Each of the support film 12 and the protective film 16 contacts the photosensitive resin film 14. That is, the photosensitive element 10 includes a photosensitive resin film 14, a support film 12 that contacts one surface of the photosensitive resin film 14, and a protective film 16 that contacts the other surface of the photosensitive resin film 14.
[0047] The manufacturing method of the photosensitive element according to this embodiment is a manufacturing method for obtaining the photosensitive element according to this embodiment. The manufacturing method of the photosensitive element according to this embodiment includes a step of forming a photosensitive resin film by applying a photosensitive resin composition on a first film and then drying the photosensitive resin composition, and a step of disposing a second film on the photosensitive resin film. According to the manufacturing method of the photosensitive element according to this embodiment, the photosensitive element according to this embodiment can be obtained. By drying the photosensitive resin composition, at least a part of the organic solvent can be removed.
[0048] From the viewpoint of reducing drying time, the drying temperature of the photosensitive resin composition may be 70°C or higher, 80°C or higher, 90°C or higher, or 100°C or higher. From the viewpoint of easily adjusting the content of organic solvents in the photosensitive resin film, the drying temperature of the photosensitive resin composition may be 150°C or lower, 140°C or lower, 130°C or lower, 120°C or lower, or 110°C or lower. From these viewpoints, the drying temperature of the photosensitive resin composition may be 70 to 150°C, 80 to 140°C, 80 to 120°C, 90 to 130°C, 100 to 120°C, or 100 to 110°C.
[0049] The drying time of the photosensitive resin composition may be 6 minutes or more, 10 minutes or more, 12 minutes or more, or 14 minutes or more, from the viewpoint of excellent storage stability of the photosensitive resin film. The drying time of the photosensitive resin composition may be 80 minutes or less, 70 minutes or less, 60 minutes or less, 55 minutes or less, or 50 minutes or less, from the viewpoint of excellent handling of the photosensitive resin film. From these viewpoints, the drying time of the photosensitive resin composition may be 6 to 80 minutes, 8 to 70 minutes, 10 to 60 minutes, 12 to 55 minutes, or 14 to 50 minutes. The drying time of the photosensitive resin composition can be adjusted according to the drying temperature.
[0050] The method for manufacturing the photosensitive element according to this embodiment may include a pressurization step of pressurizing a laminate comprising a first film, a photosensitive resin film, and a second film (for example, by heating and pressurizing: 50 to 100°C, 0.10 to 0.55 MPa, etc.). In the pressurization step, the laminate may be pressurized (for example, by heating and pressurizing: 50 to 100°C, 0.10 to 0.55 MPa, etc.) with the polypropylene film A positioned vertically above the photosensitive resin film.
[0051] The method for manufacturing a resist pattern according to this embodiment comprises, in this order: an arrangement step of arranging the photosensitive resin film of the photosensitive element according to this embodiment on a substrate with one of the first film and the second film removed and the other of the first film and the second film positioned on the substrate side; an exposure step of exposing a part of the photosensitive resin film; and a developing step of removing at least a part (part or all) of one of the exposed and unexposed parts of the photosensitive resin film to form a resist pattern.
[0052] In the placement step, one of the first film and the second film (hereinafter referred to as "film F1") is removed, and the photosensitive resin film of the photosensitive element according to this embodiment is placed on the substrate with the other of the first film and the second film (hereinafter referred to as "film F2") positioned on the substrate side. In the placement step, at least one of film F1 and film F2 is a polypropylene film A in contact with the photosensitive resin film. Film F1 may be a polypropylene film A, or it may not be a polypropylene film A. Film F2 may be a polypropylene film A, or it may not be a polypropylene film A.
[0053] In the placement process, the photosensitive resin film can be placed on the substrate while in contact with the substrate. When placing the photosensitive resin film on the substrate, the photosensitive resin film may be heated while being pressed against the substrate. The heating temperature during pressing may be, for example, 70 to 130°C, and the pressure during pressing may be, for example, 0.1 to 1.0 MPa (1 to 10 kgf / cm²). ２ These conditions may be as follows, but they can be selected as needed. The placement process may be carried out under reduced pressure.
[0054] The substrate may include a conductive layer, an insulating layer, and a conductive layer disposed on the insulating layer. Examples of substrates are not particularly limited, but include circuit forming substrates comprising an insulating layer and a conductive layer disposed on the insulating layer; die pads (lead frame substrates) made of alloy substrates, silicon substrates, glass substrates, and the like.
[0055] In the exposure process, a portion of the photosensitive resin film is exposed. In the exposure process, the photosensitive resin film can be exposed using activated light. In the exposure process, the photosensitive resin film may be exposed with film F2 removed, or the photosensitive resin film may be exposed using activated light through film F2.
[0056] There are no particular restrictions on the exposure method, and any known exposure method can be used. Examples include the method of irradiating an image with active light through a positive or negative mask pattern called artwork (mask exposure method), the LDI (Laser Direct Imaging) exposure method, and the method of irradiating an image with an image of a photomask projected onto active light through a lens (projection exposure method).
[0057] As a light source for the active ray, any known light source can be used without particular restrictions, and a light source that emits ultraviolet light can be used. Examples of light sources that emit ultraviolet light include carbon arc lamps, mercury vapor arc lamps, high-pressure mercury lamps, xenon lamps, gas lasers (argon lasers, etc.), solid-state lasers (YAG lasers, etc.), and semiconductor lasers (gallium nitride-based blue-violet lasers, etc.).
[0058] In the development process, at least a portion of either the exposed or unexposed areas of the photosensitive resin film is removed to form a resist pattern. If film F2 is placed on the photosensitive resin film during the exposure process, the development process may be performed after removing film F2. The development method may be wet development or dry development.
[0059] In the case of wet development, the photosensitive resin film can be developed using a developer solution appropriate to its composition and a known wet development method. Examples of wet development methods include the dip method, paddle method, high-pressure spray method, brushing, scrubbing, and agitation immersion method. One wet development method may be used alone or in combination of two or more methods.
[0060] The developer can be appropriately selected depending on the composition of the photosensitive resin film. Examples of developers include alkaline aqueous solutions and organic solvent developers.
[0061] Examples of bases in alkaline aqueous solutions include alkali hydroxides such as lithium, sodium, or potassium hydroxides; alkali carbonates such as lithium, sodium, potassium, or ammonium carbonates or bicarbonates; alkali metal phosphates such as potassium phosphate and sodium phosphate; alkali metal pyrophosphates such as sodium pyrophosphate and potassium pyrophosphate; sodium borate; sodium metasilicate; tetramethylammonium hydroxide; ethanolamine; ethylenediamine; diethylenetriamine; 2-amino-2-hydroxymethyl-1,3-propanediol; 1,3-diamino-2-propanol; and morpholine.
[0062] Examples of organic solvents used in organic solvent developers include 1,1,1-trichloroethane, N-methyl-2-pyrrolidone, N,N-dimethylformamide, cyclohexanone, methyl isobutyl ketone, and γ-butyrolactone.
[0063] The method for manufacturing a resist pattern according to this embodiment may include a step of obtaining a photosensitive element by the method for manufacturing a photosensitive element according to this embodiment, prior to the arrangement step.
[0064] The resist pattern manufacturing method according to this embodiment may include a step of removing (peeling off) the film F1 from the photosensitive element before the placement step. The resist pattern manufacturing method according to this embodiment may include a step of removing (peeling off) the film F2 from the photosensitive element between the placement step and the exposure step, or between the exposure step and the development step.
[0065] The method for manufacturing a resist pattern according to this embodiment may include a heating step (hereinafter referred to as the "first heating step") between the arrangement step and the exposure step, in order to reduce the residual solvent in the photosensitive resin film, and may also include a step of heating the photosensitive resin film while the film F2 has been removed.
[0066] The heating temperature in the first heating step may be 50°C or higher, 60°C or higher, 70°C or higher, 80°C or higher, 90°C or higher, or 100°C or higher. The heating temperature may be 200°C or lower, 190°C or lower, 180°C or lower, 170°C or lower, 160°C or lower, or 150°C or lower. From these viewpoints, the heating temperature may be 50 to 200°C, 60 to 180°C, or 80 to 160°C. The first heating step may have multiple steps with different heating temperatures.
[0067] The method for manufacturing a resist pattern according to this embodiment may include a heating step (hereinafter referred to as the "second heating step") between the exposure step and the development step, in order to improve adhesion to the substrate.
[0068] The heating temperature in the second heating step may be 50°C or higher, 60°C or higher, 70°C or higher, 80°C or higher, 90°C or higher, or 100°C or higher. The heating temperature may be 250°C or lower, 230°C or lower, 210°C or lower, 200°C or lower, 190°C or lower, or 180°C or lower. From these viewpoints, the heating temperature may be 50 to 250°C, 60 to 200°C, or 80 to 180°C. The second heating step may have multiple steps with different heating temperatures.
[0069] The method for manufacturing a resist pattern according to this embodiment may include a step of heating or exposing the resist pattern after the development step.
[0070] Figures 2 and 3 are schematic cross-sectional views showing an example of a resist pattern manufacturing method, and are schematic cross-sectional views showing an example of a resist pattern manufacturing method using a positive-type photosensitive photosensitive resin film. In Figure 2(a), a substrate 20 is prepared. The substrate 20 comprises an insulating layer 22 and a conductive layer 24 disposed on the insulating layer 22. The conductive layer 24 is, for example, a copper layer. In Figure 2(b), after removing the protective film 16 of the photosensitive element 10 in Figure 1, the photosensitive resin film 14 and support film 12 of the photosensitive element 10 are laminated on the substrate 20. In Figure 2(c), after removing the support film 12, the photosensitive resin film 14 is heated. In Figure 3(a), an exposed area 14a is formed on the photosensitive resin film 14 by irradiating the photosensitive resin film 14 with an active light L onto which the image of the photomask is projected (exposure by projection exposure method). In Figure 3(b), a resist pattern 14b is formed on the substrate 20 by removing the exposed portion 14a of the photosensitive resin film 14 from the substrate 20.
[0071] The method for manufacturing a conductor pattern according to this embodiment includes a step of forming a conductor pattern using a resist pattern obtained by the resist pattern manufacturing method according to this embodiment as a mask. In the method for manufacturing a conductor pattern according to this embodiment, the conductor pattern may be formed by performing a plating treatment or etching treatment using the resist pattern obtained by the resist pattern manufacturing method according to this embodiment as a mask, or the conductor pattern may be formed by performing a plating treatment or etching treatment on a substrate on which the resist pattern obtained by the resist pattern manufacturing method according to this embodiment has been formed. Examples of constituent materials for the conductor pattern include copper, solder, nickel, and gold.
[0072] In the method for manufacturing a conductor pattern according to the first embodiment, a resist pattern obtained by the resist pattern manufacturing method according to this embodiment is used as a mask, and a conductor pattern is formed by applying a plating treatment to at least a part (or all) of the portion of the substrate where the resist pattern is not formed. In the method for manufacturing a conductor pattern according to the first embodiment, the substrate has a conductor layer, and the resist pattern obtained by the resist pattern manufacturing method according to this embodiment is formed on the conductor layer. The resist pattern is used as a mask, and a conductor pattern is formed by applying a plating treatment to at least a part (or all) of the portion of the substrate's conductor layer where the resist pattern is not formed. The materials of the substrate's conductor layer and the plating layer (conductor layer) formed by the plating treatment may be the same or different. If the materials of the substrate's conductor layer and the plating layer (conductor layer) formed by the plating treatment are the same, the conductor layer and the plating layer may be integrated. The plating treatment may be electrolytic plating or electroless plating. Examples of plating treatments include copper plating, solder plating, nickel plating, gold plating, etc.
[0073] In the method for manufacturing a conductor pattern according to the second embodiment, the substrate comprises a conductor layer, and a resist pattern obtained by the method for manufacturing a resist pattern according to this embodiment is formed on the conductor layer. Using the resist pattern as a mask, a conductor pattern covered by the resist pattern is formed by etching away at least a portion (part or all) of the conductor layer not covered by the resist pattern. The etching method is appropriately selected according to the conductor layer to be removed.
[0074] The method for manufacturing a conductor pattern according to this embodiment may include a step of removing the resist pattern on the substrate after plating or etching. The resist pattern can be removed, for example, by an aqueous solution that is more strongly alkaline than the alkaline aqueous solution used in the developing step.
[0075] In the method for manufacturing a conductor pattern according to the first embodiment, if the substrate has a conductor layer, after removing the resist pattern, the portion of the conductor layer of the substrate that was covered by the resist pattern may be removed by etching (for example, flash etching). The etching method is appropriately selected depending on the conductor layer to be removed.
[0076] One embodiment of the method for manufacturing a conductor pattern according to this embodiment is a method for manufacturing a wiring substrate (for example, a method for manufacturing a printed circuit board), and the method for manufacturing a wiring substrate according to this embodiment includes a step of forming a wiring pattern (for example, a circuit) as a conductor pattern using a resist pattern obtained by the method for manufacturing a resist pattern according to this embodiment as a mask. The wiring substrate according to this embodiment can be obtained by the method for manufacturing a wiring substrate according to this embodiment. The wiring substrate according to this embodiment may be a single-layer printed circuit board, a multilayer printed circuit board, or a printed circuit board having small-diameter through-holes.
[0077] Figure 4 is a schematic cross-sectional view showing an example of a method for manufacturing a conductor pattern, and is a schematic cross-sectional view showing an example of a method for manufacturing a conductor pattern using the resist pattern 14b in Figure 3. In Figure 4(a), a plating layer 30 is formed on the conductor layer 24 that is not covered by the resist pattern 14b on the substrate 20 by a plating process using the resist pattern 14b as a mask. In Figure 4(b), after removing the resist pattern 14b, a conductor layer 24a is formed by removing the portion of the conductor layer 24 that was covered by the resist pattern 14b. As a result, a conductor pattern 40 composed of the conductor layer 24a and the plating layer 30 is formed.
[0078] The present disclosure will be further described below with reference to examples, but the present disclosure is not limited to the following examples.
[0079] <Preparation of Photosensitive Element> A polyethylene terephthalate film with an average thickness of 50 μm (manufactured by Toyobo Co., Ltd., product name "A-5300", width: 590 mm) was prepared as a support film. Next, a positive-type photosensitive resin composition (non-volatile content: 50% by mass) containing 3-methoxybutyl acetate as an organic solvent was prepared using "PMER P-BZ4000" manufactured by Tokyo Ohka Kogyo Co., Ltd. After applying this positive-type photosensitive resin composition onto the support film in a direction perpendicular to the width direction of the support film, a photosensitive resin film (average thickness after drying: 145 μm) was formed by drying it at 100°C for 20 minutes using a hot air convection dryer. Subsequently, a laminate A was obtained by laminating the protective film described later onto the photosensitive resin film. Then, with the protective film positioned vertically above the photosensitive resin film, a photosensitive element was fabricated by pressurizing laminate A using a roll laminating machine (MCK Corporation, product name "MRK-650Y") at a temperature of 70°C (upper and lower rolls), a roll speed of 1.3 m / min, and a pressure of 0.5 MPa, thereby laminating the support film, photosensitive resin film, and protective film in that order. The surface roughness (Ra) of the surface of the protective film in Examples 1 and 2 and Comparative Examples 2 and 3 that was in contact with the photosensitive resin film was measured, and it was confirmed that they had equivalent surface roughness.
[0080] {Protective films of examples and comparative examples} Example 1: Biaxially oriented polypropylene film, manufactured by Toyobo Co., Ltd., product name "P2161", the side with corona treatment was used as the contact surface with the photosensitive resin film, average thickness 40 μm Example 2: Biaxially oriented polypropylene film, manufactured by Toyobo Co., Ltd., product name "P2161", the side without corona treatment was used as the contact surface with the photosensitive resin film, average thickness 40 μm Example 3: Biaxially oriented polypropylene film, manufactured by Oji F-Tex Co., Ltd., product name "MA-420", the side without corona treatment was used as the contact surface with the photosensitive resin film, average thickness 35 μm Comparative example 1: Polyethylene film, manufactured by Tamapoly Co., Ltd., product name "NF-50", the side without corona treatment was used as the contact surface with the photosensitive resin film, average thickness 50 μm Comparative Example 2: Biaxially oriented polypropylene film, manufactured by Toyobo Co., Ltd., product name "P2161", the side in contact with the photosensitive resin film was corona-treated, with an average thickness of 20 μm. Comparative Example 3: Biaxially oriented polypropylene film, manufactured by Toyobo Co., Ltd., product name "P2161", the side in contact with the photosensitive resin film was not corona-treated, with an average thickness of 20 μm.
[0081] <Measurement of Residual Solvent> A calibration curve for 3-methoxybutyl acetate was created by gas chromatography under the following conditions. Next, after removing the support film and protective film from the photosensitive element, the photosensitive resin film was dissolved in acetone, and the residual solvent in the photosensitive resin film was measured by gas chromatography. The presence of 3-methoxybutyl acetate in the photosensitive resin films of Examples 1 to 3 was confirmed, and the content of 3-methoxybutyl acetate was 16 to 17% by mass based on the total mass of the photosensitive resin film. Measuring instrument: Agilent Technologies GC 7890B Carrier gas: Nitrogen gas, 5.0 mL / min Column: DB-WAX Polyethylene Glycol (0.53 mm I.D. × 30 m, 1.0 μm) Oven temperature: Heating at 60°C for 5 min, then increasing to 200°C at 20°C / min Detector: FID
[0082] <Measurement of Average Thickness> The average thickness of the support film, photosensitive resin film, and protective film was measured using the following procedure. First, a test piece measuring 50 mm in length and 320 mm in width (horizontal direction = width direction of the support film) was obtained by cutting the photosensitive element. Marks were made on the surface of the support film and protective film at the center of this test piece, at two positions located 60 mm apart from the center in the horizontal direction, and at two positions located 120 mm apart from the center in the horizontal direction. The average thickness of the photosensitive element was obtained by measuring the thickness of these five positions (marked positions) on the photosensitive element using a contact-type film thickness gauge (manufactured by Mitutoyo Corporation, product name "VL-50"). After peeling off the protective film, the average thickness of the protective film was obtained by measuring the thickness of the five positions (marked positions) on the protective film using the same contact-type film thickness gauge. After peeling off the support film, the average thickness of the support film was obtained by measuring the thickness of the five positions (marked positions) on the support film using the same contact-type film thickness gauge. The average thickness of the photosensitive resin film was obtained by subtracting the average thickness of the protective film and the average thickness of the support film from the average thickness of the photosensitive elements.
[0083] <180° Tape Peel Test> Using a roll laminating machine (MCK Corporation, product name "MRK-650Y"), at room temperature (approximately 22°C, upper and lower rolls), a roll speed of 1.3 m / min, and a pressure of 0.5 MPa, an adhesive tape (Nitto Denko Corporation, 31B adhesive tape, 25 mm wide) was laminated onto the protective film of the photosensitive element (the side of the protective film opposite to the photosensitive resin film) to create laminate B, in which the support film, photosensitive resin film, protective film, and adhesive tape were stacked in this order. Next, laminate B was cut to obtain a test piece measuring 50 mm in length and 125 mm in width (horizontal direction = width direction of the support film). This test piece was fixed to a tensile testing machine (Kyowa Interface Science Co., Ltd., product name "VPA-H100"). The peel force (unit: N) was measured by pulling the adhesive tape of the test piece at a peel speed of 300 mm / min and a peel angle of 180°. The peeling force was measured for Examples 1 and 2 and Comparative Examples 2 and 3. The results are shown in Table 1.
[0084] <90° Peel Test> A test piece measuring 20 mm in length and 125 mm in width (horizontal direction = width direction of the support film) was obtained by cutting the photosensitive element. This test piece was fixed to a tensile testing machine (manufactured by Kyowa Interface Science Co., Ltd., product name "VPA-H100"). Next, the peel force (unit: N) was measured by pulling the protective film of the test piece at a peel speed of 300 mm / min and a peel angle of 90°. The results are shown in Table 1.
[0085] <Protective Film Adhesion> The condition of the protective film was observed by visually inspecting the photosensitive element from the protective film side. Cases where no lifting (lifting from the edges) or wrinkles were observed were judged as "A", cases where the width (maximum diameter) of the lifting was 50 mm or less and no wrinkles were observed were judged as "B", cases where no wrinkles were observed but the width (maximum diameter) of the lifting exceeded 50 mm were judged as "C", and cases where wrinkles were observed were judged as "D". The results are shown in Table 1.
[0086]
[0087] 10...Photosensitive element, 12...Support film, 14...Photosensitive resin film, 14a...Exposure area, 14b...Resist pattern, 16...Protective film, 20...Substrate, 22...Insulating layer, 24, 24a...Conducting layer, 30...Plating layer, 40...Conducting pattern, L...Activating light.
Claims
1. A photosensitive element comprising a first film, a photosensitive resin film disposed on the first film, and a second film disposed on the photosensitive resin film, wherein at least one of the first film and the second film is a polypropylene film with an average thickness of 30 μm or more that is in contact with the photosensitive resin film, and the average thickness of the photosensitive resin film is 80 μm or more.
2. The photosensitive element according to claim 1, wherein the average thickness of the photosensitive resin film is 80 to 300 μm.
3. The photosensitive element according to claim 1, wherein the photosensitive resin film has positive-type photosensitivity.
4. The photosensitive element according to claim 1, wherein the average thickness of the polypropylene film is 30 to 100 μm.
5. The photosensitive element according to claim 1, wherein the average thickness of the polypropylene film is 40 to 100 μm.
6. The photosensitive element according to claim 1, wherein the side of the polypropylene film facing the photosensitive resin film is corona treated.
7. A method for manufacturing a photosensitive element according to any one of claims 1 to 6, comprising the steps of: forming a photosensitive resin film by applying a photosensitive resin composition onto a first film and then drying the photosensitive resin composition; and arranging a second film on the photosensitive resin film.
8. A method for manufacturing a photosensitive element according to claim 7, comprising the step of applying pressure to a laminate comprising the first film, the photosensitive resin film, and the second film, with the polypropylene film positioned vertically above the photosensitive resin film.
9. A method for manufacturing a resist pattern, comprising in this order: an arrangement step of arranging the photosensitive resin film of the photosensitive element according to any one of claims 1 to 6 on the substrate, with one of the first film and the second film removed and the photosensitive resin film positioned on the substrate side relative to the other of the first film and the second film; an exposure step of exposing a part of the photosensitive resin film; and a developing step of removing at least a part of either the exposed portion or the unexposed portion of the photosensitive resin film to form a resist pattern.
10. The method for manufacturing a resist pattern according to claim 9, further comprising the step of heating the photosensitive resin film with the other film removed between the arrangement step and the exposure step.
11. The method for manufacturing a resist pattern according to claim 9, further comprising a step of heating the photosensitive resin film between the exposure step and the development step.
12. A method for manufacturing a conductor pattern, comprising the step of forming a conductor pattern using a resist pattern obtained by the method for manufacturing a resist pattern described in claim 9 as a mask.