Light detection apparatus and electronic device

Abstract

A light detection apparatus according to one embodiment of the present disclosure comprises: a semiconductor layer; an optical layer that is provided on a first surface side of the semiconductor layer; a wiring layer that is provided on a second surface side of the semiconductor layer; a first region and a second region that each have a plurality of pixels which each include a photoelectric conversion element provided to the semiconductor layer; a first pad and a second pad that are provided to the wiring layer in the second region; and a first opening that has a first portion which is provided so as to reach the first pad from the first surface side of the semiconductor layer, a second portion which is provided so as to reach the second pad from the first surface side of the semiconductor layer, and a third portion which is provided to the optical layer so as to span the first portion and the second portion.

Description

Optical Detection Device and Electronic Device

[0001] The present disclosure relates to an optical detection device and an electronic device.

[0002] There has been proposed a photoelectric conversion device having a pixel region in which a plurality of pixels each including a photoelectric conversion element are arranged, and a peripheral region in which a plurality of input / output terminals are arranged (Patent Document 1).

[0003] Japanese Patent Application Laid-Open No. 2024-38808

[0004] In an optical detection device, it is required to suppress an increase in chip size.

[0005] It is desirable to provide an optical detection device capable of suppressing an increase in chip size.

[0006] The optical detection device according to an embodiment of the present disclosure includes a semiconductor layer having a first surface and a second surface opposite to the first surface, an optical layer provided on the first surface side of the semiconductor layer, a wiring layer provided on the second surface side of the semiconductor layer, a first region having a plurality of pixels each including a photoelectric conversion element provided in the semiconductor layer, a second region provided around the first region, a first pad and a second pad provided in the wiring layer in the second region, a first portion provided so as to reach the first pad from the first surface side of the semiconductor layer, a second portion provided so as to reach the second pad from the first surface side of the semiconductor layer, and a first opening having a third portion provided in the optical layer so as to straddle the first portion and the second portion. The electronic device according to an embodiment of the present disclosure includes an optical system and an optical detection device that receives light transmitted through the optical system. The optical detection device includes a semiconductor layer having a first surface and a second surface opposite to the first surface, an optical layer provided on the first surface side of the semiconductor layer, a wiring layer provided on the second surface side of the semiconductor layer, a first region having a plurality of pixels each including a photoelectric conversion element provided in the semiconductor layer, a second region provided around the first region, a first pad and a second pad provided in the wiring layer in the second region, a first portion provided so as to reach the first pad from the first surface side of the semiconductor layer, a second portion provided so as to reach the second pad from the first surface side of the semiconductor layer, and a first opening having a third portion provided in the optical layer so as to straddle the first portion and the second portion.

[0007] Figure 1 is a block diagram showing an example of the schematic configuration of an imaging device, which is an example of a photodetector according to an embodiment of the present disclosure. Figure 2 is a diagram showing an example of the planar configuration of an imaging device according to an embodiment of the present disclosure. Figure 3 is a diagram showing an example of the pixel circuit configuration of an imaging device according to an embodiment of the present disclosure. Figure 4 is a diagram showing an example of the cross-sectional configuration of an imaging device according to an embodiment of the present disclosure. Figure 5 is a diagram for illustrating an example of the configuration of an imaging device according to an embodiment of the present disclosure. Figure 6 is a diagram for illustrating an example of the configuration of an imaging device according to an embodiment of the present disclosure. Figure 7 is a diagram showing an example of the configuration of an imaging device according to a comparative example of the present disclosure. Figure 8 is a diagram for illustrating an example of the configuration of the optical layer of an imaging device according to an embodiment of the present disclosure. Figure 9 is a diagram for illustrating an example of the configuration of the optical layer of an imaging device according to an embodiment of the present disclosure. Figure 10 is a diagram for illustrating an example of the configuration of the optical layer of an imaging device according to an embodiment of the present disclosure. Figure 11A is a diagram for illustrating an example of the configuration of an imaging device according to an embodiment of the present disclosure. Figure 11B is a diagram for illustrating an example of the configuration of an imaging device according to an embodiment of the present disclosure. Figure 11C is a diagram for illustrating an example of the configuration of an imaging device according to an embodiment of the present disclosure. Figure 12 is a diagram illustrating an example configuration of an imaging device according to an embodiment of the present disclosure. Figure 13 is a diagram illustrating an example configuration of an imaging device according to an embodiment of the present disclosure. Figure 14 is a diagram illustrating another example configuration of an imaging device according to an embodiment of the present disclosure. Figure 15 is a diagram illustrating another example configuration of an imaging device according to an embodiment of the present disclosure. Figure 16 is a diagram illustrating another example configuration of an imaging device according to an embodiment of the present disclosure. Figure 17 is a diagram illustrating an example configuration of an imaging device according to Modification 1 of the present disclosure. Figure 18 is a diagram illustrating an example configuration of an imaging device according to Modification 1 of the present disclosure. Figure 19 is a diagram illustrating another example configuration of an imaging device according to Modification 1 of the present disclosure. Figure 20 is a diagram illustrating another example configuration of an imaging device according to Modification 1 of the present disclosure. Figure 21 is a diagram illustrating an example configuration of an imaging device according to Modification 2 of the present disclosure. Figure 22 is a diagram illustrating an example configuration of an imaging device according to Modification 2 of the present disclosure. Figure 23 is a diagram illustrating another example configuration of an imaging device according to Modification 2 of the present disclosure.Figure 24 is a diagram illustrating another configuration example of an imaging device according to Modification 2 of this disclosure. Figure 25 is a diagram illustrating another configuration example of an imaging device according to Modification 2 of this disclosure. Figure 26 is a diagram illustrating another configuration example of an imaging device according to Modification 2 of this disclosure. Figure 27 is a diagram illustrating an example configuration example of an imaging device according to Modification 3 of this disclosure. Figure 28 is a diagram illustrating an example configuration example of an imaging device according to Modification 3 of this disclosure. Figure 29 is a diagram illustrating an example configuration example of an imaging device according to Modification 4 of this disclosure. Figure 30 is a diagram illustrating an example configuration example of an imaging device according to Modification 5 of this disclosure. Figure 31 is a diagram illustrating an example configuration example of an imaging device according to Modification 6 of this disclosure. Figure 32 is a block diagram showing an example configuration of an electronic device having an imaging device. Figure 33 is a block diagram illustrating an example of a schematic configuration of a vehicle control system. Figure 34 is an explanatory diagram showing an example of the installation position of an external information detection unit and an imaging unit. Figure 35 is a diagram illustrating an example of a schematic configuration of an endoscopic surgery system. Figure 36 is a block diagram illustrating an example of the functional configuration of a camera head and a CCU.

[0008] The embodiments of this disclosure will be described in detail below with reference to the drawings. The description will be in the following order: 1. Embodiments 2. Modifications 3. Application Examples 4. Application Examples

[0009] <1. Embodiments> Figure 1 is a block diagram showing an example of the schematic configuration of an imaging device, which is an example of a light detection device according to an embodiment of the present disclosure. A light detection device is a device capable of detecting incident light. An imaging device 1, which is an example of a light detection device, has a plurality of pixels P including a photoelectric conversion unit, and is configured to generate a signal by photoelectric conversion of incident light.

[0010] The imaging device 1 is configured using, for example, a substrate (such as a silicon (Si) substrate or a silicon on insulator (SOI) substrate) on which a photoelectric conversion unit for each pixel P is provided. The imaging device 1 receives light transmitted through an optical system (not shown) and generates a signal. The imaging device 1 may have a structure (i.e., a laminated structure) composed of multiple substrates (or semiconductor layers) stacked on top of each other.

[0011] The imaging device 1 has a region (pixel section 100) where multiple pixels P are provided, as shown in the example in Figure 1. The imaging device 1 has, for example, a pixel section 100 in which multiple pixels P are arranged in a matrix in two dimensions as an imaging area. The photoelectric conversion section of each pixel P is a photoelectric conversion element, and can also be called a photoelectric conversion region. The photoelectric conversion section of the pixel P is, for example, a photodiode (PD), and is configured to convert light into photoelectric energy.

[0012] The imaging device 1 captures incident light (image light) from the subject to be measured, for example, through an optical system including an optical lens and an aperture (diaphragm). The imaging device 1 captures an image of the subject formed by the optical system. The imaging device 1 generates a pixel signal by photoelectric conversion of the received light (e.g., visible light, infrared light, etc.). The imaging device 1, being a light detection device, is a device capable of receiving light and generating a signal, and can also be called a light receiving device.

[0013] The imaging device 1 (light detection device) is configured as an image sensor, a distance measuring sensor, etc. For example, the imaging device 1 is a CMOS (Complementary Metal Oxide Semiconductor) image sensor, a CCD (Charge Coupled Device) image sensor, etc. The imaging device 1 can be used in various electronic devices such as digital still cameras, video cameras, and mobile phones.

[0014] [Outline Configuration of the Imaging Device] The imaging device 1, as shown in the example in Figure 1, includes a pixel section 100, a pixel control unit 111, a signal processing unit 112, a control unit 113, and a processing unit 114. The imaging device 1 also includes, for example, a plurality of control lines Lc and a plurality of signal lines Ls. The pixel section 100 is a pixel array in which a plurality of pixels P are arranged, and can also be called a pixel region. The number and arrangement of pixels P provided in the pixel section 100 (i.e., the pixel region) can be changed as appropriate.

[0015] The control line Lc is a signal line capable of transmitting signals to control the pixel P, and is connected to the pixel control unit 111 and the pixel P of the pixel unit 100. The control line Lc is configured to transmit, for example, a control signal for reading signals from the pixel P. In the example shown in Figure 1, multiple control lines Lc are wired to each pixel row of the pixel unit 100, which is composed of multiple pixels P arranged horizontally (in the row direction).

[0016] The multiple control lines Lc for each pixel row of the imaging device 1 include, for example, wiring that transmits signals to control the transfer transistor, wiring that transmits signals to control the selection transistor, wiring that transmits signals to control the reset transistor, wiring that transmits signals to control the switching transistor, etc. The control lines Lc can also be called drive lines (or pixel drive lines) that transmit signals to drive the pixels P.

[0017] The signal line Ls is a signal line capable of transmitting signals from the pixel P, and is connected to the pixel P of the pixel unit 100 and the signal processing unit 112. The signal line Ls is electrically connected to the pixel P and is configured to transmit signals output from the pixel P. For example, in the pixel unit 100, a signal line Ls is wired for each pixel column, which is composed of multiple pixels P arranged vertically (in the column direction).

[0018] In the pixel section 100 of the imaging device 1, multiple signal lines Ls may be provided for a single pixel row. For example, the imaging device 1 has multiple signal lines Ls for each pixel row containing multiple pixels P. The number and arrangement of control lines Lc and signal lines Ls provided in the imaging device 1 are not limited to the illustrated example and can be changed as appropriate.

[0019] The pixel control unit 111 is configured to control each pixel P. The pixel control unit 111 is a control circuit (pixel control circuit) and is composed of multiple circuits, such as a buffer, a shift register, and an address decoder. The pixel control unit 111 generates a signal for controlling the pixels P and outputs it to each pixel P of the pixel unit 100 via a control line Lc. The pixel control unit 111 is controlled, for example, by the control unit 113, and controls each pixel P of the pixel unit 100.

[0020] The pixel control unit 111 generates signals for controlling pixels P (signals to control the transfer transistor of pixel P, signals to control the selection transistor, signals to control the reset transistor, signals to control the switching transistor, etc.) and supplies them to each pixel P via the control line Lc. The pixel control unit 111 can perform control to read out pixel signals from each pixel P. The pixel control unit 111 can also be described as a pixel drive unit (pixel drive circuit) configured to drive each pixel P.

[0021] The signal processing unit 112 is configured to perform signal processing on the input pixel signal. The signal processing unit 112 is a signal processing circuit and includes, for example, a load circuit, an AD (Analog Digital) conversion circuit, a horizontal selection switch, etc. The load circuit is, for example, composed of a current source capable of supplying current to the amplification transistor of the pixel P, and together with the amplification transistor of the pixel P, it forms a source follower circuit.

[0022] The load circuit and AD conversion circuit of the signal processing unit 112 are provided, for example, for each of the multiple signal lines Ls. The signal processing unit 112 may also have an amplification circuit configured to amplify the signal read from the pixel P via the signal line Ls. As an example, a load circuit, an amplification circuit, and an AD conversion circuit are provided for each pixel row of the pixel unit 100.

[0023] The signals output from each pixel P selected and scanned by the pixel control unit 111 are input to the signal processing unit 112 via the signal line Ls. The signal processing unit 112 performs signal processing such as AD conversion and CDS (Correlated Double Sampling) of the pixel P signals. The signals from each pixel P transmitted via each signal line Ls are processed by the signal processing unit 112 and output to the processing unit 114.

[0024] The processing unit 114 is configured to acquire signals from each pixel P and perform signal processing. The processing unit 114 is a processing circuit and is composed of, for example, circuits that perform various signal processing on the input pixel signals. The processing unit 114 (processing circuit) is composed of, for example, an arithmetic circuit, a memory circuit, an I / F (interface) circuit, etc.

[0025] The processing unit 114 is configured to perform various signal processing operations, such as noise reduction, interpolation, and gradation correction. For example, the processing unit 114 can perform signal processing on the pixel signal input from the signal processing unit 112 and output the processed pixel signal. The processing unit 114 may also include a processor and memory.

[0026] The control unit 113 is configured to control each part of the imaging device 1. The control unit 113 is a control circuit and includes, for example, a PLL (Phase Locked Loop), a timing generator, a DAC (Digital to Analog Converter), etc. As an example, the control unit 113 can receive a clock and data commanding the operating mode from an external source, and can also output data such as internal information of the imaging device 1.

[0027] The control unit 113 includes, for example, a timing generator configured to generate various timing signals. Based on the various timing signals (pulse signals, clock signals, etc.) generated by the timing generator, the control unit 113 performs drive control for the pixel control unit 111 and the signal processing unit 112, etc. Note that the control unit 113 and the processing unit 114 may be configured as an integrated unit.

[0028] The pixel unit 100, pixel control unit 111, signal processing unit 112, control unit 113, processing unit 114, etc., described above may be provided on a single substrate or on multiple substrates. The imaging device 1 may have a laminated structure formed by stacking multiple substrates (for example, two or more semiconductor substrates).

[0029] The pixel control unit 111, signal processing unit 112, control unit 113, processing unit 114, etc. of the imaging device 1 may be provided, for example, as peripheral circuits around the pixel unit 100. Note that some or all of the signal processing unit 112, control unit 113, and processing unit 114 may be configured as a single unit.

[0030] Figure 2 shows an example of a planar configuration of an imaging device according to an embodiment. The pixel section 100 (i.e., pixel area) of the imaging device 1 has an area (referred to as the effective pixel area 101) in which a plurality of pixels P are provided. The imaging device 1 also has an area surrounding the pixel section 100 (referred to as the peripheral area 200). The peripheral area 200 is provided around the pixel section 100, including the effective pixel area 101, as shown in the example in Figure 2.

[0031] As shown in Figure 2, the direction of incidence of light from the subject being measured is defined as the Z-axis direction, the left-right direction perpendicular to the Z-axis direction is defined as the X-axis direction, and the up-down direction perpendicular to both the Z-axis and X-axis directions is defined as the Y-axis direction. In subsequent figures, directions may also be indicated based on the direction of the arrows in Figure 2.

[0032] In the effective pixel region 101, pixels P are arranged in two dimensions as effective pixels. Multiple pixels P are provided in the effective pixel region 101, for example, so as to be aligned in the horizontal direction (X-axis direction) and the vertical direction (Y-axis direction). Each pixel P has a filter configured to selectively transmit light in a specific wavelength range from the incident light.

[0033] The peripheral region 200 has a region (referred to as the pad region 210) where a plurality of pads 80 (see also Figure 4) are provided. For example, a plurality of pad regions 210 are provided around the pixel portion 100. The imaging device 1 has, for example, pads (terminals) used for transmitting signals to the outside as pads 80. Also, for example, power pads, GND (ground) pads, etc. are provided as pads 80.

[0034] The plurality of pads 80 provided in the imaging device 1 include input / output pads to which signals are input and output, input pads to which signals are input from outside the imaging device 1, output pads to which signals are output to the outside of the imaging device 1, and so on. The number and arrangement of the pads 80 and pad areas 210 in the imaging device 1 are not limited to the illustrated example and can be set arbitrarily.

[0035] [Pixel Configuration] Figure 3 shows an example of the circuit configuration of a pixel in an imaging device according to an embodiment. A pixel P includes, for example, a photoelectric conversion unit 12, a transistor TG, a floating diffusion FD, and a readout circuit 15. The photoelectric conversion unit 12 (photoelectric conversion element) is configured to receive light and generate a signal. The readout circuit 15 is configured to output a signal based on the photoelectrically converted charge.

[0036] The photoelectric conversion unit 12 is configured to generate electric charge through photoelectric conversion. In the example shown in Figure 3, the photoelectric conversion unit 12 is a photodiode (PD) that converts incident light into electric charge. The photoelectric conversion unit 12 performs photoelectric conversion to generate an electric charge corresponding to the amount of light received. The photoelectric conversion unit 12 is a photoelectric conversion element and can also be called a light receiving element.

[0037] The transistor TG is configured to transfer the charge photoelectrically converted in the photoelectric conversion unit 12 to the floating diffusion FD. The transistor TG is a transfer transistor. The transistor TG is controlled by the signal STG to electrically connect or disconnect the photoelectric conversion unit 12 and the floating diffusion FD. The transistor TG (i.e., the transfer transistor) can transfer the charge converted and stored in the photoelectric conversion unit 12 to the floating diffusion FD.

[0038] The floating diffusion FD is a storage unit and is configured to store the transferred charge. The floating diffusion FD can store the charge photoelectrically converted by the photoelectric conversion unit 12. The floating diffusion FD stores the transferred charge and converts it into a voltage corresponding to the capacitance of the floating diffusion FD. The floating diffusion FD can also be described as a storage unit capable of holding charge.

[0039] The readout circuit 15 is configured to read out pixel signals based on the charge photoelectrically converted by the photoelectric conversion unit 12. The readout circuit 15 includes, as an example, a transistor AMP, a transistor SEL, and a transistor RST. The readout circuit 15 may also include a floating diffusion FD. The readout circuit 15 may also include a transistor TG.

[0040] The transistor AMP is configured to generate and output a signal based on the charge stored in the floating diffusion FD. The transistor AMP is an amplifying transistor. The transistor AMP (i.e., the amplifying transistor) can generate and output a signal based on the charge converted by the photoelectric conversion unit 12.

[0041] The gate of the transistor AMP is electrically connected to the floating diffusion diode (FD), and the voltage converted by the floating diffusion diode is input to it. The drain of the transistor AMP is connected to a power line that supplies, for example, the power supply voltage (the power supply voltage VDD in the example shown in Figure 3).

[0042] The source of the transistor AMP is connected to the signal line Ls, for example, via the transistor SEL. The transistor AMP is configured to generate a signal based on the charge stored in the floating diffusion FD, i.e., a signal based on the voltage of the floating diffusion FD, and output it to the signal line Ls.

[0043] The transistor SEL is configured to control the output of the pixel signal. The transistor SEL is a selection transistor. The transistor SEL is electrically connected in series with the transistor AMP, as shown in the example in Figure 3. The transistor SEL is controlled by the signal SSEL and is configured to output the signal from the transistor AMP to the signal line Ls. The transistor SEL (i.e., the selection transistor) can control the timing of the pixel signal output.

[0044] The transistor SEL is configured to output a signal based on the charge converted by the photoelectric conversion unit 12. The transistor SEL can output the pixel signal of the pixel P to the signal line Ls. Note that the transistor SEL may be electrically connected in series between the power supply line to which the power supply voltage (power supply voltage VDD in FIG. 3) is applied and the transistor AMP. If necessary, the transistor SEL may be omitted.

[0045] The transistor RST is configured to be able to reset the voltage of the floating diffusion FD. The transistor RST is a reset transistor. The transistor RST (that is, the reset transistor) is electrically connected to, for example, the power supply line to which the power supply voltage (power supply voltage VDD in the example shown in FIG. 3) is applied, and is configured to be able to execute reset of the charge of the pixel P.

[0046] The transistor RST is controlled by the signal SRST, can reset the charge accumulated in the floating diffusion FD, and can reset the voltage of the floating diffusion FD. The transistor RST electrically connects the power supply line and the floating diffusion FD, and discharges the charge accumulated in the floating diffusion FD. Note that the transistor RST can reset the charge accumulated in the photoelectric conversion unit 12 via the transistor TG.

[0047] Note that the readout circuit 15 may be configured to be able to change the conversion gain (that is, the conversion efficiency) when converting the charge into a voltage. For example, the readout circuit 15 has a transistor (switching transistor) used for setting the conversion gain. As an example, the switching transistor is electrically connected between the floating diffusion FD and the transistor RST.

[0048] In the readout circuit 15, when the switching transistor is turned on, the capacitance added to the floating diffusion FD of the pixel P increases, and the conversion gain when converting charge into voltage is switched. The switching transistor can switch the capacitance connected to the gate of the transistor AMP and change the conversion gain (conversion efficiency). The switching transistor may be electrically connected in series to the transistor RST or may be electrically connected in parallel to the transistor RST.

[0049] The above-described transistor TG (transfer transistor), transistor AMP (amplification transistor), transistor SEL (selection transistor), transistor RST (reset transistor), and switching transistor are each, for example, a MOS transistor (MOSFET) having gate, source, and drain terminals.

[0050] In the example shown in FIG. 3, the transistor TG, transistor AMP, transistor SEL, and transistor RST are each composed of an NMOS transistor. Note that the transistors of the pixel P may be composed of PMOS transistors as necessary.

[0051] The pixel control unit 111 (see FIG. 1) of the imaging device 1 supplies control signals to the gates of the transistors TG, transistor SEL, transistor RST, switching transistor, etc. of each pixel P via the above-described control line Lc, and turns the transistors on (conducting state) or off (non-conducting state).

[0052] As an example, the plurality of control lines Lc for each pixel row of the imaging device 1 include a wiring for transmitting a signal STG for controlling the transistor TG, a wiring for transmitting a signal SSEL for controlling the transistor SEL, a wiring for transmitting a signal SRST for controlling the transistor RST, a wiring for transmitting a signal for controlling the switching transistor, and the like.

[0053] Transistors TG, SEL, RST, and switching transistors are controlled on and off by the pixel control unit 111. The pixel control unit 111 controls the readout circuit 15 for each pixel P, causing each pixel P to output a pixel signal to the signal line Ls. The pixel control unit 111 can control the reading of the pixel signal from each pixel P to the signal line Ls.

[0054] The imaging device 1 may have a configuration in which multiple pixels P share one readout circuit 15. The readout circuit 15 is provided for multiple pixels P, for example. In the imaging device 1, a readout circuit 15 may be arranged for each of the multiple pixels P, and one readout circuit 15 may be shared by multiple pixels P. As an example, a 2x2 pixel array, composed of four adjacent pixels P, may share one readout circuit 15.

[0055] [Configuration of the Imaging Device] Figure 4 is a diagram showing an example of the cross-sectional configuration of an imaging device according to an embodiment. The imaging device 1 has, for example, an optical layer 140, a semiconductor layer 110, and a wiring layer 90, as shown in the example in Figure 4. The imaging device 1 has a configuration in which the optical layer 140, the semiconductor layer 110, and the wiring layer 90 are stacked in the Z-axis direction.

[0056] In the example shown in Figure 4, an optical layer 140, a semiconductor layer 110, and a wiring layer 90 are provided from the side where light is incident. The optical layer 140 is provided on the side where light from the optical system (e.g., imaging lens, aperture, etc.) is incident, and the wiring layer 90 is provided on the side opposite to the side where light is incident.

[0057] The semiconductor layer 110 is made of a semiconductor substrate, such as a Si substrate or an SOI substrate. As shown in Figure 4, the semiconductor layer 110 has opposing surfaces 11S1 and 11S2. Surface 11S2 is the surface opposite to surface 11S1. Surface 11S1 of the semiconductor layer 110 is, for example, a light-receiving surface (light incident surface).

[0058] The surface 11S2 of the semiconductor layer 110 is an element formation surface on which elements such as transistors and capacitive elements are formed. A gate electrode, a gate insulating film (for example, a gate oxide film), etc., are provided on the surface 11S2 of the semiconductor layer 110. The element formation surface of the semiconductor layer 110, i.e., surface 11S2, is a surface on which various circuit elements are provided, and can also be called a circuit surface.

[0059] The semiconductor layer 110 may be a SiGe (silicon germanium) substrate or a SiC (silicon carbide) substrate, etc. The semiconductor layer 110 may be composed of other semiconductor materials, such as III-V group compound semiconductor materials. The semiconductor layer 110 may be formed using other materials.

[0060] An optical layer 140 is provided on the surface 11S1 side of the semiconductor layer 110. A wiring layer 90 is provided on the surface 11S2 side of the semiconductor layer 110. The optical layer 140 is stacked on the semiconductor layer 110 in the thickness direction perpendicular to the surface 11S1 of the semiconductor layer 110.

[0061] For example, the semiconductor layer 110 is provided with a photoelectric conversion unit 12 (photoelectric conversion element) for each pixel P. The photoelectric conversion unit 12 is provided between surfaces 11S1 and 11S2 of the semiconductor layer 110. Multiple photoelectric conversion units 12 are provided in the semiconductor layer 110 so as to be aligned with surfaces 11S1 and 11S2 of the semiconductor layer 110. For example, multiple photoelectric conversion units 12 are embedded in the semiconductor layer 110. The photoelectric conversion unit 12 can also be called a photoelectric conversion region or a photoelectric conversion layer.

[0062] The wiring layer 90 is provided laminated on the semiconductor layer 110. The wiring layer 90 includes, for example, a conductive film and an insulating film, and has a plurality of wirings and a plurality of vias (also called contacts). The wiring layer 90 has a configuration in which a plurality of wirings are laminated with an insulating film acting as an interlayer insulating film (interlayer insulating layer). The wiring layer 90 is composed of, for example, two or more or three or more layers of wiring, and is provided as a multilayer wiring layer.

[0063] The wiring of the wiring layer 90 is formed using metallic materials such as aluminum (Al), copper (Cu), cobalt (Co), or ruthenium (Ru). The wiring of the wiring layer 90 may also be made of tungsten (W), polysilicon (Poly-Si), or other conductive materials. The interlayer insulating film may be formed using silicon oxide (SiO), silicon nitride (SiN), silicon oxynitride (SiON), or other insulating materials.

[0064] For example, the above-described readout circuit 15 (see Figure 3) is provided in the semiconductor layer 110 and the wiring layer 90 for each pixel P or for multiple pixels P. The pixel control unit 111, signal processing unit 112, control unit 113, processing unit 114, etc., described above using Figure 1 may be provided in the semiconductor layer 110 and the wiring layer 90, or they may be provided on a substrate separate from the semiconductor layer 110.

[0065] The optical layer 140 is configured to guide the incident light toward the photoelectric conversion unit 12. The optical layer 140 is provided, for example, as a light-gathering layer. The optical layer 140 (i.e., the light-gathering layer) has a light-guide member 60 and is configured to focus the incident light toward the photoelectric conversion unit 12 of the pixel P. In the example shown in Figure 4, the optical layer 140 has a layer 130 having a light-guide member 60 and a layer 120.

[0066] Layer 120 is provided, for example, as a spacer layer, between layer 130 on which the light guide member 60 is provided and the semiconductor layer 110. Layer 120 (i.e., the spacer layer) is located between layer 130 and the semiconductor layer 110. Layer 120 is provided, for example, so as to be laminated on the semiconductor layer 110 on which the photoelectric conversion unit 12 is provided.

[0067] Layer 120 is composed of an insulating film such as an oxide film, a nitride film, or an oxynitride film, and can be called an insulating layer. Layer 120 may be composed of insulating materials such as silicon oxide (SiO), silicon oxynitride (SiON), silicon nitride (SiN), or aluminum oxide (AlO), or it may be composed of other materials.

[0068] Layer 120 may be made of a low refractive index material such as silicon oxide or silicon oxynitride. Layer 120 may also be formed using a resin material. Layer 120 may also be formed using another material that transmits light in the wavelength range to be measured. Layer 120 can also be described as a light-transmitting transparent layer.

[0069] The imaging device 1 has a filter 20, for example, as shown in the example in Figure 4. The filter 20 is configured to selectively transmit light in a specific wavelength range from the incident light. The filter 20 is provided in the layer 120 for each pixel P or for each of a group of pixels P. The filter 20 is formed between the layer 130 and the semiconductor layer 110 and is located above the photoelectric conversion unit 12.

[0070] The filter 20 is, for example, an RGB color filter. The multiple pixels P in the effective pixel area 101 of the pixel section 100 include, as an example, pixels (R pixels) having a photoelectric conversion unit that receives light in the red (R) wavelength range, pixels (G pixels) having a photoelectric conversion unit that receives light in the green (G) wavelength range, and pixels (B pixels) having a photoelectric conversion unit that receives light in the blue (B) wavelength range.

[0071] In the effective pixel region 101, for example, multiple R pixels, multiple G pixels, and multiple B pixels are arranged repeatedly. The R pixels, G pixels, and B pixels are arranged according to a Bayer array, for example. The R pixels, G pixels, and B pixels each generate and output pixel signals for the R component, G component, and B component, respectively. The imaging device 1 can obtain RGB pixel signals.

[0072] The filter 20 provided in the pixel P of the pixel section 100 is not limited to primary color (RGB) color filters, but may also be complementary color filters such as Cy (cyan), Mg (magenta), Ye (yellow). A filter corresponding to W (white), that is, a filter that transmits light across the entire wavelength range of incident light, may also be provided. The filter 20 may also be a filter that transmits infrared light.

[0073] The photoelectric conversion unit 12 of the pixel P converts incident light into photoelectric energy, for example, through a light guide member 60 and a filter 20. In the imaging device 1, the filter 20 may be omitted if necessary. For example, depending on the characteristics of the optical layer 140, the filter 20 may not be provided for some of the pixels P of the imaging device 1. Also, for example, a pixel that receives white (W) light and performs photoelectric conversion does not need to have a filter 20.

[0074] Layer 130 is a layer (region) having a light guide member 60, and is provided to be laminated on layer 120, which serves as a spacer layer. Layer 130 uses the light guide member 60 (light guide portion) to propagate light towards the photoelectric conversion unit 12. Layer 130 has a light guide member 60 that includes, for example, a plurality of nanostructures (e.g., nanopillars), and is configured to guide incident light towards the photoelectric conversion unit 12.

[0075] Layer 130 is configured, for example, as an optical component (optical element) utilizing metasurface technology. Layer 130 may be configured as a metasurface layer (or metamaterial layer). Layer 130 may have a lens that focuses light as a light guide member 60. The light guide member 60 is configured as an optical component that focuses light and can also be called a light focusing member.

[0076] The imaging device 1 has a separation region 17, as shown in the example in Figure 4. The separation region 17 is a separation region provided between a plurality of adjacent pixels P (or photoelectric conversion units 12). At least a portion of the separation region 17 is provided at the boundary between adjacent pixels P. The separation region 17 is formed in the semiconductor layer 110 between a plurality of adjacent pixels P and separates the pixels P (or photoelectric conversion units 12). The separation region 17 may be provided so as to penetrate the semiconductor layer 110.

[0077] The isolation region 17 is constructed, for example, using trenches (grooves) and is provided around the pixel P (or photoelectric conversion unit 12). The isolation region 17 is provided, for example, so as to surround all four sides of the photoelectric conversion unit 12 in a plan view (i.e., when viewed in the XY plane). The isolation region 17 may be formed in a grid pattern in the semiconductor layer 110 so as to surround each photoelectric conversion unit 12 of each pixel P.

[0078] The isolation region 17, for example, has an FTI (Full Trench Isolation) structure and is formed to extend to the surface 11S2 of the semiconductor layer 110. The isolation region 17 (isolation portion) may also be provided from the surface 11S1 of the semiconductor layer 110 to the space between the surface 11S1 and surface 11S2 of the semiconductor layer 110. The isolation region 17 can also be called an inter-pixel isolation portion or an inter-pixel isolation wall.

[0079] An insulating film, such as a silicon oxide film, a silicon nitride film, a silicon oxynitride film, or an aluminum oxide film, is provided in the trench of the separation region 17. The trench of the separation region 17 may also be filled with an insulating material, such as polysilicon, a metallic material, or another material.

[0080] The separation region 17 may be formed using a material having a low refractive index, such as silicon oxide or silicon oxynitride. A void (cavity) may be provided within the separation region 17. The separation region 17 may be composed of a semiconductor region (n-type or p-type semiconductor region) formed by ion implantation or solid-phase diffusion.

[0081] The imaging device 1 may have at least one of a fixed charge film and a reflection suppression film on the surface 11S1 side of the semiconductor layer 110. For example, the fixed charge film and the reflection suppression film are provided between the semiconductor layer 110 and the filter 20. The fixed charge film and the reflection suppression film are composed of, as an example, a metal compound (metal oxide, metal nitride, metal oxynitride, etc.).

[0082] A fixed charge film is a film having a fixed charge (for example, a negative fixed charge), and is formed using, for example, a high dielectric material. The fixed charge film may be composed of aluminum oxide, hafnium oxide, etc. A film having a positive fixed charge may also be provided as the fixed charge film. A reflection suppression film (i.e., an anti-reflective film) is provided, as an example, laminated with the fixed charge film.

[0083] The reflection suppression film is composed of, for example, hafnium oxide, tantalum oxide, etc. The reflection suppression film may also be composed of insulating materials such as silicon nitride, aluminum oxide, etc., or may be formed using other materials. At least a portion of one of the fixed charge film and the reflection suppression film may be provided in the semiconductor layer 110 along the side surface (side wall) of the isolation region 17.

[0084] Figures 5 and 6 are diagrams illustrating an example of the configuration of an imaging device according to an embodiment. Figure 5 shows an example of the cross-sectional configuration of the imaging device 1, and Figure 6 shows an example of the planar configuration of the pad area 210 of the imaging device 1. The imaging device 1 is provided with a pad 80 (PAD) as shown in the examples in Figures 4 to 6.

[0085] The pad 80 is provided on the wiring layer 90 in an area outside the effective pixel area 101, for example. The pad 80 is an electrode formed using a metallic material such as aluminum (Al) or copper (Cu). The pad 80 may be made of an AlCu (aluminum copper) alloy, or it may be made using other conductive materials.

[0086] In the example shown in Figure 4, the pad 80 is formed in the wiring layer 90 in the peripheral region 200. The pad 80 is electrically connected to, for example, the wiring and vias of the wiring layer 90. The pad 80 may be located in the lower part of the wiring layer 90 or in the upper part of the wiring layer 90. The pad 80 can also be considered a terminal (connection terminal) of the imaging device 1.

[0087] Each pad area 210 of the imaging device 1 is arranged with, for example, a plurality of pads 80 that are electrically connected to internal circuit elements of the imaging device 1. As an example, the plurality of pads 80 provided in the imaging device 1 include a power supply pad and a GND pad, and supply the power supply voltage and GND voltage (ground voltage) input from the outside to the various circuits of the imaging device 1.

[0088] The imaging device 1 has multiple pads 80, including pads used for transmitting signals to the outside. The multiple pads 80 include, for example, input / output pads to which signals are input and output, input pads to which signals are input from outside the imaging device 1, and output pads to which signals are output to the outside of the imaging device 1. The pads 80 can be used as bonding pads.

[0089] The imaging device 1 has an opening 70 on the pad 80. The opening 70 is provided by carving out a portion of the optical layer 140, the semiconductor layer 110, and the wiring layer 90 in the peripheral region 200, for example, as shown in the example in Figure 4. The opening 70 is defined by the end faces (side surfaces) of each layer of the optical layer 140, the semiconductor layer 110, and the wiring layer 90.

[0090] The opening 70 is provided, for example, for multiple pads 80. The opening 70 is provided so as to expose each of the multiple pads 80 (in the example shown in Figures 5 and 6, pads 80a, 80b, 80c, and 80d). The opening 70 is formed so as to expose the surface (end face) of the pad 80.

[0091] Pads 80a, 80b, 80c, and 80d are each exposed from the wiring layer 90, the semiconductor layer 110, and the optical layer 140 at the opening 70. Each pad 80 is partially exposed from the wiring layer 90, for example, by the opening 70. The opening 70 is a pad opening, and the pads 80 can also be called pad electrodes.

[0092] The opening 70 has a plurality of portions 71 (in the examples shown in Figures 5 and 6, portions 71a, 71b, 71c, and 71d) and a portion 72. The portions 71 of the opening 70 are provided so as to reach the pad 80 from the surface 11S1 side of the semiconductor layer 110. The portions 71 are formed on the pad 80, for example, as trenches. The opening 70 is provided as a pad opening having a trench structure.

[0093] The portion 71 of the opening 70 extends, for example, through the semiconductor layer 110 to the surface of the pad 80 in the wiring layer 90. The portion 71 is configured as a trench portion that extends in the thickness direction (i.e., the Z-axis direction) of the semiconductor layer 110. A portion 71 (i.e., a trench) is provided for each pad 80.

[0094] Part 71 is provided, for example, to reach the surface of the pad 80 from part 72. In the example shown in Figure 5, part 71a is provided to reach pad 80a, and part 71b is provided to reach pad 80b. Also, part 71c is provided to reach pad 80c, and part 71d is provided to reach pad 80d.

[0095] The opening 70 is provided such that a portion of the semiconductor layer 110 or the like is located between a plurality of portions 71. For example, in the pad region 210, the opening 70 is formed such that a portion of the semiconductor layer 110 or the like remains between a plurality of adjacent portions 71. In the example shown in Figure 5, a portion of the semiconductor layer 110 and a portion of the wiring layer 90 are present between a plurality of adjacent portions 71.

[0096] For example, a portion of the semiconductor layer 110 and a portion of the wiring layer 90 are arranged between portions 71a and 71b, between portions 71b and 71c, and between portions 71c and 71d. It can also be said that two adjacent portions 71 (trenches) in the X-axis direction (or Y-axis direction) are provided partially sandwiching the semiconductor layer 110, etc.

[0097] The portion 72 of the opening 70 is provided in the optical layer 140. The portion 72 is provided so as to span multiple portions 71 (for example, portions 71a to 71d), as shown in the example in Figure 5. As shown in the example in Figure 5, the width of the portion 72 in the X-axis direction (or Y-axis direction) is greater than the width of the portion 71 in the X-axis direction (or Y-axis direction).

[0098] The portion 72 is provided for a plurality of adjacent pads 80 and is located above the portion 71 for each pad 80. The portion 72 is provided as a common opening for a plurality of pads 80. For example, the portion 72 is formed by excavating the optical layer 140 to the surface 11S1 of the semiconductor layer 110 (or the vicinity of the surface 11S1 of the semiconductor layer 110).

[0099] In the examples shown in Figures 5 and 6, portion 72 is formed continuously with portions 71a to 71d and is provided integrally with portions 71a to 71d. Portion 72 can be described as the upper opening region, and portion 71 can be described as the lower opening region. The number and arrangement of portions 71 in the opening 70, and the shapes of portions 71 and 72, etc., are not limited to the illustrated examples and can be changed as appropriate.

[0100] For example, in the wire bonding process, a metal wire (e.g., Au Wire) is connected (bonded) to the pad 80 by a capillary (a fixture also called a bonding capillary). The size (area, width, etc.) of parts 71 and 72 of the opening 70 is determined considering the size of the capillary, the thickness (height) of the optical layer 140, etc.

[0101] In the imaging device 1 according to this embodiment, an opening 70 having multiple portions 71 and 72 is provided. The opening 70 has portions common to multiple pads 80, for example, pads 80a to 80d. Therefore, compared to the case where an individual opening (i.e., pad opening) is provided for each pad, it is possible to reduce the area required for the arrangement of each pad and opening.

[0102] The opening 70 of the imaging device 1 has a portion 71 that reaches the pad 80 and a portion 72 that spans multiple portions 71. Therefore, it is possible to suppress contact between the capillary and the peripheral portion of the pad opening, as in the comparative example shown in Figure 7, when performing a touchdown on the pad. This makes it possible to suppress a decrease in the quality of the imaging device 1.

[0103] When the optical layer is configured as a metasurface layer and collects light from surrounding pixels, the focal length tends to increase, and the thickness (height) of the optical layer (i.e., the light-collecting layer) tends to increase. When the thickness of the optical layer is large, the length (depth) of the pad aperture in the Z-axis direction increases, which can make contact between the capillary and the periphery of the pad aperture more likely.

[0104] In this embodiment, the opening 70 is configured to have a portion 71 and a portion 72, as described above. This makes it possible to prevent contact between the capillary and the peripheral portion of the opening 70 while suppressing an increase in the size of the pad 80 and the opening 70. This makes it possible to suppress an increase in the chip area and thus suppress an increase in manufacturing costs. It makes it possible to provide a high-performance light-collecting layer while suppressing an increase in manufacturing costs.

[0105] Furthermore, in the imaging device 1, multiple portions 71 of the aperture 70 are provided as trenches for each pad 80, with a portion of the semiconductor layer 110 existing between the multiple portions 71. This is expected to suppress the generation of unwanted reflected light and prevent noise and defects caused by reflected light. For example, it is possible to suppress the occurrence of flare and prevent a decrease in image quality.

[0106] Figures 8 and 9 are diagrams illustrating an example of the configuration of the optical layer of an imaging device according to an embodiment. Figure 9 shows an example of a planar configuration in the optical layer 140 of the imaging device 1. Light from a subject to be measured is incident on the optical layer 140, for example, through an optical system (imaging lens, etc.). The optical layer 140 has, for example, a layer 130 as a metasurface layer, and is configured to guide the light incident from above to the photoelectric conversion unit 12 of each pixel P.

[0107] The optical layer 140 has a nanostructure (also called a nanopillar) called a structure 61, which is configured to guide incident light towards the photoelectric conversion unit 12. The structure 61 is, for example, a columnar (pillar-shaped) structure. The optical layer 140, as an example, imparts a phase delay to the incident light and guides the light to the filter 20 and the photoelectric conversion unit 12.

[0108] The layer 130 has, for example, a light guide member 60 containing one or more structures 61 for each pixel P or for each of the multiple pixels P in the pixel section 100. The light guide member 60 has a structure 61 as a nanostructure and a member 65 provided around the structure 61. The structure 61 is, for example, a pillar (i.e., a columnar member) having a cylindrical shape.

[0109] The structure 61 is also called a nanopillar, nanopost, nanoatom, metaatom, metasurface structure, or microstructure. Layer 130 is configured, for example, as a spectral layer that spectrally separates light. Layer 130 can also be called a splitter layer or a color splitter layer. In layer 130, for example, multiple structures 61 are arranged two-dimensionally in the X-axis and Y-axis directions. The shape of each structure 61 in layer 130 can be changed as appropriate.

[0110] The structure 61 may be a pillar having a prismatic shape (for example, a rectangular prism). The structure 61 may have a circular, elliptical, or polygonal shape in plan view (when viewed in the XY plane). The shape of the structure 61 may be cross-shaped or other shapes. Furthermore, the number and arrangement of the structures 61 are not limited to the illustrated example and can be changed as appropriate. Structures 61 may also be arranged at the boundaries of multiple adjacent pixels P.

[0111] Member 65 is provided around the structure 61 in layer 130. Member 65 is, for example, a member located around the structure 61 and is made of a material having a refractive index different from that of the structure 61. The structure 61 is provided within member 65 and can also be said to be positioned by replacing a part of member 65. Member 65 can also be called a material layer or a support member.

[0112] In the optical layer 140, for example, a structure 61 is provided for each pixel P of each color. In layer 130, the structures 61 are arranged at each pixel P so as to give a desired phase profile to the incident light. In the example shown in Figure 9, etc., the structures 61 are arranged at the R pixel Pr, the G pixel Pg, and the B pixel Pb, respectively. The size (width, height, etc.), number of structures, spacing, and constituent materials of the structures 61 are determined so that light in the wavelength range to be detected is propagated to a predetermined photoelectric conversion unit 12.

[0113] In a plan view, the structure 61 has a size that is, for example, less than or equal to a predetermined wavelength of incident light. When viewed in the XY plane, the structure 61 may have a size that is less than or equal to the wavelength range of the light to be measured (for example, the wavelength range of visible light or the wavelength range of infrared light). When viewed in the XZ plane or YZ plane, the size of the structure 61 (for example, the height of a columnar structure 61) may be less than or equal to the predetermined wavelength of incident light, or it may be greater than the wavelength of incident light.

[0114] In the optical layer 140, for example, multiple structures 61 are arranged at intervals less than or equal to a predetermined wavelength of incident light. For example, multiple structures 61 may be provided in the X-axis and Y-axis directions at intervals less than or equal to the wavelength range of visible light. Alternatively, for example, multiple structures 61 may be arranged in the XY plane at intervals less than or equal to the wavelength range of infrared light.

[0115] Member 65 is provided between multiple adjacent structures 61. Member 65 is provided, for example, to fill the space between multiple adjacent structures 61, and can also be called a filling member. Part of member 65 may be formed on the upper surface (surface) of a structure 61. Member 65 is provided, for example, to cover multiple structures 61. Part of member 65 is provided on the lower surface (bottom surface) of a structure 61 and may be located below a structure 61.

[0116] The structure 61 is configured to have a refractive index different from that of the adjacent material (or medium). The structure 61 has a refractive index different from that of the surrounding material or void, for example, member 65. The structure 61 and member 65 may be made of different materials. For example, the structure 61 may be made of a material with a relatively high refractive index.

[0117] The structure 61 is made of a material having a higher refractive index than the member 65, and thus has a higher refractive index than the member 65. The structure 61 is made of a high refractive index material and can also be called a high refractive index portion. The member 65 is made of a low refractive index material and can also be called a low refractive index portion. The member 65 can also be called a material layer having a different refractive index than the structure 61.

[0118] The structure 61 is composed of, for example, an oxide film containing titanium (Ti). As an example, the structure 61 is composed of titanium oxide (TiO). The structure 61 may also be formed using silicon, polysilicon (Poly-Si), amorphous silicon (a-Si), or germanium (Ge), etc. The structure 61 may also be formed using silicon carbide (SiC) or other silicon compounds.

[0119] The structure 61 may be composed of other metal compounds (metal oxides, metal nitrides, metal oxynitrides, etc.). The structure 61 may be composed of elements, oxides, nitrides, oxynitrides, or composites thereof of titanium (Ti), hafnium (Hf), zirconium (Zr), aluminum (Al), tantalum (Ta), indium (In), niobium (Nb), etc. The structure 61 may also be composed of GaP, GaN, GaAs, etc.

[0120] The component 65 is composed of an inorganic material such as an oxide, nitride, or oxynitride. The component 65 may be composed of silicon oxide (SiO), silicon nitride (SiN), silicon oxynitride (SiON), etc. The component 65 may also be formed using silicon carbide, silicon oxide carbide, silicon carbide nitride, or other silicon compounds.

[0121] The component 65 may be made of a siloxane resin, a styrene resin, an acrylic resin, or the like. The component 65 may be made of a material in which fluorine is contained in any of these resins. The component 65 may also be formed using a material in which beads (fillers) having a higher (or lower) refractive index than the resin are embedded in any of these resins.

[0122] The structure 61 and member 65 may be made of inorganic materials or organic materials. The structure 61 or member 65 may be made using voids (air). For example, member 65 may be made including voids (cavities). The materials constituting the structure 61 and member 65 are selected according to the refractive index difference with the surrounding material, the wavelength range of the light to be measured, etc.

[0123] Layer 130 is configured to control the wavefront of light by causing a phase delay in the incident light through, for example, the difference in refractive index between the structure 61 and the surrounding material (medium). Layer 130 adjusts the direction of light propagation (i.e., propagation direction) by giving a phase delay to the incident light through the structure 61 and the member 65 surrounding the structure 61.

[0124] At each pixel P (or each light guide member 60), for example, the effective refractive index of the structure 61 and member 65 is adjusted according to the occupancy rate (filling rate) of the structure 61, and the amount of phase delay of light in each wavelength range is determined. By adjusting the size and number of structures 61, the amount of phase delay can be controlled to achieve a desired phase distribution.

[0125] The optical layer 140 may have members 67 and 68, as shown in the example in Figure 10. Member 67 is configured, for example, as a reflection suppression film (i.e., an anti-reflective film) and is provided on the structure 61 of layer 130. Member 67 (reflection suppression film) is provided, for example, on the side of the structure 61 to which light is incident. Member 67 is provided on the structure 61 to reduce (suppress) reflection.

[0126] Member 67 is provided, for example, to cover a plurality of structures 61 and members 65, and is configured to have a refractive index different from that of the structures 61 (or members 65). Member 67 may be made of an insulating material such as silicon oxide or silicon oxynitride, or it may be made of other materials. Member 67 may be made by laminating a plurality of films.

[0127] The member 68 is configured as at least one of a reflection suppression film and a stopper film. The member 68 is provided between the structure 61 of layer 130 and layer 120. The member 68 is provided, for example, as an etching stopper film (stopper layer) during manufacturing. The provision of the member 68 improves the process controllability of the structure 61.

[0128] The component 68 is composed of, for example, a single layer film made of one of the following: silicon nitride, silicon oxynitride, aluminum oxide, hafnium oxide, etc., or a laminated film made of two or more of these. The component 68 may also be formed using other materials. The imaging device 1 may have only one of the components 67 and 68.

[0129] Layer 130 is configured, for example, to be capable of spectrally separating light and is provided as a spectral element (spectrometry unit) that spectrally separates incident light. Layer 130 (and optical layer 140) is configured as a splitter (color splitter) and can also be called a color splitter layer or a color separation layer. Layer 130 can also be called an optical element configured to redirect light.

[0130] Layer 130 adjusts the propagation direction of light by applying different phase delay amounts according to the wavelength of light, thereby separating the incident light into light of each wavelength range. The size, material (refractive index), etc., of the structure 61 are determined so that light of a specific wavelength range to be detected branches off and proceeds to the photoelectric conversion unit 12 of the desired pixel P. The light phased by layer 130 reaches the photoelectric conversion unit 12 via layer 120 and the filter 20, etc.

[0131] Light from the subject to be measured is incident on the photoelectric conversion unit 12 of each pixel P via the optical layer 140. Each pixel P converts the incident light into electricity to generate a pixel signal. The imaging device 1 can use the pixel signals obtained by each pixel P to generate, for example, image data showing the subject image, image data relating to the distance to the object to be measured (distance image data), and so on.

[0132] The optical layer 140 having layer 130 imparts different phase delays to light in multiple wavelength ranges, such as light in a first wavelength range, light in a second wavelength range, and light in a third wavelength range. In the imaging device 1, the optical layer 140 adjusts the propagation direction of blue light, green light, and red light, which are, for example, the first to third wavelengths of light.

[0133] The light guide member 60 (referred to as light guide member 60b) of the pixel Pb is configured to propagate blue (B) light from the incident light to the photoelectric conversion unit 12 of the pixel Pb. Furthermore, the light guide member 60b of the pixel Pb is configured to propagate red (R) light from the incident light to the photoelectric conversion unit 12 of the pixel Pr, and green (G) light to the photoelectric conversion unit 12 of the pixel Pg. The light guide member 60b of the pixel Pb splits the incident light, guiding the light in the red wavelength range toward the pixel Pr and the light in the green wavelength range toward the pixel Pg.

[0134] The light guide member 60 (referred to as the light guide member 60g) of the pixel Pg is configured to propagate green (G) light from the incident light to the photoelectric conversion unit 12 of the pixel Pg. The light guide member 60g of the pixel Pg is also configured to propagate red (R) light from the incident light to the photoelectric conversion unit 12 of the pixel Pr, and blue (B) light to the photoelectric conversion unit 12 of the pixel Pb. The light guide member 60g of the pixel Pg splits the incident light, guiding the light in the red wavelength range toward the pixel Pr and the light in the blue wavelength range toward the pixel Pb.

[0135] The light guide member 60r of the pixel Pr (referred to as the light guide member 60r) is configured to propagate red (R) light from the incident light to the photoelectric conversion unit 12 of the pixel Pr. Furthermore, the light guide member 60r of the pixel Pr is configured to propagate green (G) light from the incident light to the photoelectric conversion unit 12 of the pixel Pg, and blue (B) light to the photoelectric conversion unit 12 of the pixel Pb. The light guide member 60r of the pixel Pr splits the incident light, guiding the light in the green wavelength range toward the pixel Pg and the light in the blue wavelength range toward the pixel Pb.

[0136] Thus, as schematically shown by the arrows in Figure 11A, the multiple pixels surrounding the pixel Pb guide the blue wavelength light of the incident light toward the pixel Pb. The blue light incident on the pixel Pb and the blue light incident on each of the surrounding pixels can be focused onto the photoelectric conversion unit 12 of the pixel Pb. The photoelectric conversion unit 12 of the pixel Pb receives light in the blue wavelength range, performs photoelectric conversion, and can generate an electric charge corresponding to the amount of light received.

[0137] As schematically shown by the arrows in Figure 11B, the multiple pixels surrounding the pixel Pg guide the green wavelength light of the incident light toward the pixel Pg. The green light incident on the pixel Pg and the green light incident on each of the surrounding pixels can be focused onto the photoelectric conversion unit 12 of the pixel Pg. The photoelectric conversion unit 12 of the pixel Pg receives the green wavelength light, performs photoelectric conversion, and can generate an electric charge corresponding to the amount of light received.

[0138] Furthermore, as schematically shown by the arrows in Figure 11C, the multiple pixels surrounding the pixel Pr guide the red wavelength light of the incident light toward the pixel Pr. The red light incident on the pixel Pr and the red light incident on each of the surrounding pixels can be focused onto the photoelectric conversion unit 12 of the pixel Pr. The photoelectric conversion unit 12 of the pixel Pr receives light in the red wavelength range, performs photoelectric conversion, and can generate an electric charge corresponding to the amount of light received.

[0139] In this way, the imaging device 1, using the optical layer 140, can collect light from surrounding pixels of the pixel P into the pixel P. Light can be collected from a wider area than the size of one pixel, increasing the amount of light received by the photoelectric conversion unit 12 of the pixel P. This can improve the quantum efficiency (QE).

[0140] Figures 12 and 13 are diagrams illustrating an example of the configuration of an imaging device according to an embodiment. In a direction perpendicular to the thickness direction (Z-axis direction) of the semiconductor layer 110, for example in the X-axis direction, the distance d1 between the end (side) of portion 72 of the opening 70 and the end (side) of portion 71 may be, for example, 2.5 μm or more. This makes it possible to improve the quality and performance of the imaging device 1 while suppressing an increase in the chip area of ​​the imaging device 1.

[0141] In the imaging device 1, the distance d2 between the end of portion 72 and the end of portion 71 of the aperture 70 in the Y-axis direction may also be 2.5 μm or more. The distance (clearance) between the end (end face) of portion 72 and the end of portion 71 may be set to 2.4 μm or more, or 2.6 μm or more. The thickness t1 of the optical layer may be, for example, 3 μm or more. The thickness t1 of the optical layer may also be set to 3.5 μm or more, or 4 μm or more.

[0142] Figures 14 to 16 are diagrams illustrating another configuration example of the imaging device according to the embodiment. Figure 14 shows an example of the planar configuration of the imaging device 1, and Figures 15 and 16 show an example of the cross-sectional configuration of the imaging device 1. The pixel section 100 of the imaging device 1 may have a region (referred to as the light-shielding pixel region 105) in which a plurality of light-shielding pixels are provided.

[0143] The light-shielding pixel region 105 is provided, for example, around the effective pixel region 101. As an example, the pixel region 100 has an effective pixel region 101 on which pixels P configured as effective pixels (referred to as effective pixel P1) are provided, and a light-shielding pixel region 105 on which pixels P configured as light-shielding pixels (referred to as light-shielding pixel P2) are provided.

[0144] The light-shielding pixel P2 is configured as a pixel that is shielded from light by a light-shielding member 25, for example, as shown in the example in Figure 15 or Figure 16. The light-shielding pixel P2 has a light-shielding member 25 (light-shielding film) above the photoelectric conversion unit 12 and is in a light-shielded state. The light-shielding pixel P2 may have circuit elements (transistor TG, AMP, etc.) similar to those of the effective pixel P1.

[0145] The light-shielding pixel region 105 is provided so as to surround the effective pixel region 101, for example, as shown in the example in Figure 14. In the light-shielding pixel region 105, for example, multiple light-shielding pixels P2 are arranged in two dimensions so as to surround the effective pixel region 101. Note that the light-shielding pixels P2 are OPB (Optical Black) pixels, and the light-shielding pixel region 105 can also be called the OPB pixel region.

[0146] The layer 120 (i.e., spacer layer) of the imaging device 1 may be composed of a plurality of members, for example, member 121 and member 122. In the example shown in Figure 16, the layer 120 has a structure in which member 121 and member 122 are stacked. For example, member 121 may be formed using a resin material as a resin layer. Member 122 may be composed of an insulating film such as silicon oxide or silicon oxynitride as an insulating layer.

[0147] [Function and Effects] The light detection device according to this embodiment comprises a semiconductor layer (semiconductor layer 110) having a first surface and a second surface opposite to the first surface, an optical layer (optical layer 140) provided on the first surface side of the semiconductor layer, a wiring layer (wiring layer 90) provided on the second surface side of the semiconductor layer, a first region (pixel portion 100 or effective pixel region 101) having a plurality of pixels each including a photoelectric conversion element provided on the semiconductor layer, a second region (peripheral region 200 or pad region 210) provided around the first region, a first pad and a second pad (e.g., pad 80a, pad 80b) provided on the wiring layer in the second region, a first portion (portion 71a) provided so as to reach the first pad from the first surface side of the semiconductor layer, a second portion (portion 71b) provided so as to reach the second pad from the first surface side of the semiconductor layer, and a first aperture (aperture 70) having a third portion (portion 72) provided on the optical layer so as to span the first portion and the second portion.

[0148] The photodetector (imaging device 1) according to this embodiment includes an opening 70 having a portion 71a that reaches the pad 80a, a portion 71b that reaches the pad 80b, and a portion 72 that spans both portions 71a and 71b. This makes it possible to realize a photodetector that can suppress an increase in chip size.

[0149] Next, modified examples of the present disclosure will be described. In the following, components similar to those in the above embodiments will be denoted by the same reference numerals, and their descriptions will be omitted as appropriate.

[0150] <2. Modifications> (2-1. Modification 1) In the embodiments described above, an example of the configuration of the imaging device was explained, but the configuration of the imaging device is not limited to the example described above. For example, the number and arrangement of the parts 71 of the opening 70 can be changed as appropriate. The opening 70 may be configured to expose two or three pads 80, or it may be configured to expose four or more pads 80.

[0151] Figures 17 and 18 are diagrams illustrating an example of the configuration of an imaging device according to Modification 1 of the present disclosure. Figure 17 shows an example of the cross-sectional configuration of the imaging device 1, and Figure 18 shows an example of the planar configuration of the imaging device 1. The opening 70 may be provided so as to expose two pads 80 (in the examples shown in Figures 17 and 18, pad 80a and pad 80b).

[0152] The opening 70 has, for example, portions 71a, 71b, and portion 72. Portion 71a of the opening 70 is provided so as to reach the pad 80a from the surface 11S1 side of the semiconductor layer 110. Portion 71b is provided so as to reach the pad 80b from the surface 11S1 side of the semiconductor layer 110. Portion 72 is provided so as to span portions 71a and 71b.

[0153] Figures 19 and 20 illustrate another configuration example of the imaging device according to Modification 1. The imaging device 1 may be provided with an opening 70a provided for a plurality of pads 80 and an opening 70b provided for one pad 80. For example, an opening 70a and an opening 70b are formed in each pad region 210.

[0154] In the example shown in Figure 19, the opening 70a has portions 71a and 71b that correspond to the pads 80a and 80b, respectively, and is configured to expose the pads 80a and 80b. The opening 70b also has a portion 71c that corresponds to the pad 80c, and is configured to expose the pad 80c.

[0155] The opening 70 may be provided for multiple adjacent pads 80 in the X-axis and Y-axis directions. In the example shown in Figure 20, the opening 70 has portions 71a to 71d that correspond to pads 80a to 80d, and is provided to expose pads 80a to 80d, respectively. The opening 70 may be provided for five or more pads 80.

[0156] (2-2. Modification 2) Figures 21 and 22 are diagrams illustrating an example of the configuration of an imaging device according to Modification 2. The portion 72 of the aperture 70 may have a tapered shape, for example, as shown in the example in Figure 21. In the example shown in Figure 21, the width of the portion 72 in the X-axis direction (or Y-axis direction) increases as it moves away from the semiconductor layer 110. The portion 72 may also have a stepped side shape, as shown in the example in Figure 22. The portion 72 may also have a rectangular side shape.

[0157] Figures 23 and 24 are diagrams illustrating another configuration example of the imaging device according to Modification 2. The portion 71 of the opening 70 may have a rectangular side shape or a tapered shape. For example, as shown in the example in Figure 23, portions 71a and 71b of the opening 70 may each have a tapered shape.

[0158] In the example shown in Figure 23, the width of portion 71a in the X-axis direction (or Y-axis direction) increases as it moves away from the pad 80a. Similarly, the width of portion 71b in the X-axis direction (or Y-axis direction) increases as it moves away from the pad 80b. Note that each of portion 71a and portion 71b may have a stepped side shape, as shown in the example in Figure 24.

[0159] Figures 25 and 26 are diagrams illustrating another configuration example of the imaging device according to Modification 2. The portions 71 and 72 of the opening 70 may both have a tapered shape, or they may have a stepped side shape. In the example shown in Figure 25, portions 71a, 71b and portion 72 of the opening 70 each have a tapered shape. In the example shown in Figure 26, portions 71a, 71b and portion 72 each have a stepped side shape.

[0160] (2-3. Modification 3) Figures 27 and 28 are diagrams illustrating an example of the configuration of an imaging device according to Modification 3. The imaging device 1 has a plurality of pad areas 210 around the pixel area 100 which includes the effective pixel area 101, as shown in the example in Figure 27 or Figure 28. For example, one or more pad areas 210 may be provided along the end of the imaging device 1. Four or more pad areas 210 may be provided surrounding the pixel area 100.

[0161] (2-4. Modification 4) Figure 29 is a diagram illustrating an example of the configuration of an imaging device according to Modification 4. The imaging device 1 may have a reflection suppression film 30 on the surface 11S1 side of the semiconductor layer 110 at the opening 70, as shown in the example in Figure 29. The reflection suppression film 30 (i.e., anti-reflective film) is provided, for example, to cover a part of the semiconductor layer 110 between a plurality of adjacent portions 71. The reflection suppression film 30 may be made of a metal compound or may be formed using other materials.

[0162] (2-5. Modification 5) Figure 30 is a diagram illustrating an example of the configuration of an imaging device according to Modification 5. The optical layer 140 of the imaging device 1 may have multiple layers (multiple stages) of structures 61. The optical layer 140 has multiple structures 61, for example, structures 61a and structures 61b, which are arranged to be stacked on top of each other. As an example, the light guide member 60 of each pixel P has a first stage structure 61a and a second stage structure 61b.

[0163] As shown in Figure 30, the optical layer 140 has a layer 130 consisting of a layer 131 (first layer) including a structure 61a and a member 65a, and a layer 132 (second layer) including a structure 61b and a member 65b. Layer 132 is provided laminated on top of layer 131. Structures 61a and 61b each have, for example, a columnar shape.

[0164] Structure 61a and member 65a are constructed, for example, using materials with different refractive indices. Structure 61b and member 65b may also be constructed using materials with different refractive indices. Note that the shape and number of structures 61a and 61b are not limited to the illustrated example and can be changed as appropriate.

[0165] In the imaging device 1 according to this modified example, the optical layer 140 having multiple layers (for example, structures 61a and 61b) can appropriately guide light to the photoelectric conversion unit 12. This makes it possible to improve the performance of the optical layer 140 (light-gathering layer). For example, it becomes possible to efficiently focus light of any wavelength range to the photoelectric conversion unit 12.

[0166] (2-6. Modification 6) Figure 31 is a diagram illustrating an example of the configuration of an imaging device according to Modification 6. Layer 130 of the optical layer 140 may have a lens 69 as a light guide member 60. The lens 69 is an optical member also called an on-chip lens, for example. As an example, the lens 69 is provided so as to be located above the photoelectric conversion unit 12 and the filter 20 for each pixel P or for each of a plurality of pixels P (i.e., for each of a predetermined number of pixels P).

[0167] The lens 69 (lens portion) is made of, for example, silicon oxide, silicon nitride, or silicon oxynitride. The lens 69 may also be formed using other light-transmitting materials. Light from the subject to be measured is incident on the lens 69, for example, through an optical system such as an imaging lens. The lens 69 guides the incident light towards the photoelectric conversion unit 12. The photoelectric conversion unit 12 of the pixel P converts the incident light via the lens 69 and the filter 20 into photoelectric energy.

[0168] <3. Application Examples> The above-described imaging device 1 can be applied to any type of electronic device equipped with an imaging function, such as camera systems like digital still cameras and video cameras, or mobile phones with imaging capabilities. Figure 32 shows a schematic configuration of the electronic device 1000.

[0169] The electronic device 1000 includes, for example, a lens group 1001, an imaging device 1, a DSP (Digital Signal Processor) circuit 1002, a frame memory 1003, a display unit 1004, a recording unit 1005, an operation unit 1006, and a power supply unit 1007, all of which are interconnected via a bus line 1008.

[0170] The lens group 1001 captures incident light (image light) from the subject and forms an image on the imaging surface of the imaging device 1. The imaging device 1 converts the amount of incident light formed on the imaging surface by the lens group 1001 into an electrical signal on a pixel-by-pixel basis and supplies it as a pixel signal to the DSP circuit 1002.

[0171] The DSP circuit 1002 is a signal processing circuit that processes signals supplied from the imaging device 1. The DSP circuit 1002 outputs image data obtained by processing the signals from the imaging device 1. The frame memory 1003 temporarily holds the image data processed by the DSP circuit 1002 in frame units.

[0172] The display unit 1004 consists of, for example, a panel-type display device such as a liquid crystal panel or an organic EL (Electro Luminescence) panel, and records the video or still image data captured by the imaging device 1 onto a recording medium such as a semiconductor memory or a hard disk.

[0173] The operation unit 1006 outputs operation signals for various functions possessed by the electronic device 1000 in accordance with user operations. The power supply unit 1007 appropriately supplies various power sources to the DSP circuit 1002, frame memory 1003, display unit 1004, recording unit 1005, and operation unit 1006.

[0174] <4. Application Examples> (Application Examples to Mobile Devices) The technology relating to this disclosure (this technology) can be applied to various products. For example, the technology relating to this disclosure may be implemented as a device mounted on any type of mobile device such as automobiles, electric vehicles, hybrid electric vehicles, motorcycles, bicycles, personal mobility devices, airplanes, drones, ships, and robots.

[0175] Figure 33 is a block diagram showing a schematic configuration example of a vehicle control system, which is an example of a mobile control system to which the technology described herein may be applied.

[0176] The vehicle control system 12000 comprises a plurality of electronic control units connected via a communication network 12001. In the example shown in Figure 33, the vehicle control system 12000 includes a drive system control unit 12010, a body system control unit 12020, an external information detection unit 12030, an internal information detection unit 12040, and an integrated control unit 12050. The functional configuration of the integrated control unit 12050 is shown in the figure, which includes a microcomputer 12051, an audio / image output unit 12052, and an in-vehicle network interface 12053.

[0177] The drivetrain control unit 12010 controls the operation of devices related to the vehicle's drivetrain according to various programs. For example, the drivetrain control unit 12010 functions as a control device for a drivetrain generating device that generates driving force for the vehicle, such as an internal combustion engine or a drive motor; a drivetrain transmission mechanism that transmits driving force to the wheels; a steering mechanism that adjusts the steering angle of the vehicle; and a braking device that generates braking force for the vehicle.

[0178] The body system control unit 12020 controls the operation of various devices mounted on the vehicle body according to various programs. For example, the body system control unit 12020 functions as a control device for a keyless entry system, a smart key system, a power window system, or various lamps such as headlights, reverse lights, brake lights, turn signals, or fog lights. In this case, the body system control unit 12020 may receive radio waves transmitted from a portable device that replaces a key or signals from various switches. The body system control unit 12020 receives these radio waves or signals and controls the vehicle's door lock system, power window system, lamps, etc.

[0179] The external information detection unit 12030 detects information from outside the vehicle equipped with the vehicle control system 12000. For example, an imaging unit 12031 is connected to the external information detection unit 12030. The external information detection unit 12030 causes the imaging unit 12031 to capture images of the outside of the vehicle and receives the captured images. Based on the received images, the external information detection unit 12030 may perform object detection processing such as detecting people, cars, obstacles, signs, or characters on the road surface, or distance detection processing.

[0180] The imaging unit 12031 is a light sensor that receives light and outputs an electrical signal corresponding to the amount of light received. The imaging unit 12031 can output the electrical signal as an image or as distance measurement information. The light received by the imaging unit 12031 may be visible light or invisible light such as infrared light.

[0181] The in-vehicle information detection unit 12040 detects information inside the vehicle. The in-vehicle information detection unit 12040 is connected to, for example, a driver status detection unit 12041 that detects the driver's state. The driver status detection unit 12041 includes, for example, a camera that captures images of the driver, and the in-vehicle information detection unit 12040 may calculate the driver's level of fatigue or concentration, or determine whether the driver is drowsy, based on the detection information input from the driver status detection unit 12041.

[0182] The microcomputer 12051 can calculate control target values ​​for the drive force generator, steering mechanism, or braking device based on information inside and outside the vehicle acquired by the external information detection unit 12030 or the internal information detection unit 12040, and output control commands to the drive system control unit 12010. For example, the microcomputer 12051 can perform cooperative control aimed at realizing ADAS (Advanced Driver Assistance System) functions, including collision avoidance or impact mitigation, following driving based on distance between vehicles, maintaining vehicle speed, vehicle collision warning, or vehicle lane departure warning.

[0183] Furthermore, the microcomputer 12051 can perform cooperative control for purposes such as autonomous driving, where the vehicle drives autonomously without driver intervention, by controlling the drive force generating device, steering mechanism, or braking device, etc., based on information about the vehicle's surroundings acquired by the external information detection unit 12030 or the internal information detection unit 12040.

[0184] Furthermore, the microcomputer 12051 can output control commands to the body system control unit 12020 based on external information acquired by the external information detection unit 12030. For example, the microcomputer 12051 can control the headlights according to the position of a preceding or oncoming vehicle detected by the external information detection unit 12030, and perform coordinated control aimed at reducing glare, such as switching from high beams to low beams.

[0185] The audio-image output unit 12052 transmits at least one of audio and image output signals to an output device capable of visually or audibly notifying information to the vehicle's occupants or to those outside the vehicle. In the example shown in Figure 33, the output devices are exemplified as an audio speaker 12061, a display unit 12062, and an instrument panel 12063. The display unit 12062 may include, for example, at least one of an onboard display and a head-up display.

[0186] Figure 34 shows an example of the installation position of the imaging unit 12031.

[0187] In Figure 34, the imaging unit 12031 includes imaging units 12101, 12102, 12103, 12104, and 12105.

[0188] The imaging units 12101, 12102, 12103, 12104, and 12105 are installed, for example, on the front nose, side mirrors, rear bumper, back door, and the upper part of the windshield inside the vehicle 12100. The imaging unit 12101 installed on the front nose and the imaging unit 12105 installed on the upper part of the windshield inside the vehicle mainly acquire images of the front of the vehicle 12100. The imaging units 12102 and 12103 installed on the side mirrors mainly acquire images of the sides of the vehicle 12100. The imaging unit 12104 installed on the rear bumper or back door mainly acquires images of the rear of the vehicle 12100. The imaging unit 12105 installed on the upper part of the windshield inside the vehicle is mainly used for detecting preceding vehicles, pedestrians, obstacles, traffic lights, traffic signs, or lanes.

[0189] Figure 34 shows an example of the imaging ranges of imaging units 12101 to 12104. Imaging range 12111 indicates the imaging range of imaging unit 12101 located on the front nose, imaging ranges 12112 and 12113 indicate the imaging ranges of imaging units 12102 and 12103 located on the side mirrors, respectively, and imaging range 12114 indicates the imaging range of imaging unit 12104 located on the rear bumper or back door. For example, by superimposing the image data captured by imaging units 12101 to 12104, an overhead view image of the vehicle 12100 can be obtained.

[0190] At least one of the imaging units 12101 to 12104 may have a function for acquiring distance information. For example, at least one of the imaging units 12101 to 12104 may be a stereo camera consisting of multiple image sensors, or an image sensor having pixels for phase difference detection.

[0191] For example, the microcomputer 12051, based on distance information obtained from the imaging units 12101 to 12104, can determine the distance to each object within the imaging range 12111 to 12114 and the temporal change of this distance (relative speed to the vehicle 12100). In particular, it can extract the closest object on the vehicle 12100's path that is traveling in approximately the same direction as the vehicle 12100 at a predetermined speed (e.g., 0 km / h or more) as the preceding vehicle. Furthermore, the microcomputer 12051 can set a predetermined distance to be maintained before the preceding vehicle and perform automatic braking control (including follow-and-stop control) and automatic acceleration control (including follow-and-start control), etc. In this way, cooperative control aimed at autonomous driving, where the vehicle drives autonomously without driver intervention, can be performed.

[0192] For example, the microcomputer 12051 can use distance information obtained from imaging units 12101 to 12104 to classify and extract three-dimensional object data related to three-dimensional objects, such as motorcycles, passenger cars, large vehicles, pedestrians, utility poles, and other three-dimensional objects, and use this data for automatic obstacle avoidance. For example, the microcomputer 12051 identifies obstacles around the vehicle 12100 into obstacles that are visible to the driver of the vehicle 12100 and obstacles that are difficult to see. The microcomputer 12051 then determines the collision risk, which indicates the degree of risk of collision with each obstacle. If the collision risk is above a set value and there is a possibility of collision, the microcomputer 12051 can provide driving assistance to avoid collisions by outputting a warning to the driver via the audio speaker 12061 or the display unit 12062, or by performing forced deceleration or evasive steering via the drive system control unit 12010.

[0193] At least one of the imaging units 12101 to 12104 may be an infrared camera that detects infrared light. For example, the microcomputer 12051 can recognize pedestrians by determining whether or not pedestrians are present in the images captured by the imaging units 12101 to 12104. Such pedestrian recognition is performed, for example, by a procedure to extract feature points from the images captured by the imaging units 12101 to 12104 as infrared cameras, and a procedure to perform pattern matching on a series of feature points that indicate the contour of an object to determine whether or not it is a pedestrian. When the microcomputer 12051 determines that a pedestrian is present in the images captured by the imaging units 12101 to 12104 and recognizes a pedestrian, the audio-image output unit 12052 controls the display unit 12062 to superimpose a rectangular contour line for emphasis on the recognized pedestrian. The audio-image output unit 12052 may also control the display unit 12062 to display an icon indicating a pedestrian at a desired position.

[0194] The above describes an example of a mobile control system to which the technology described herein can be applied. The technology described herein can be applied to, for example, the imaging unit 12031 of the configuration described above. Specifically, for example, the imaging device 1 can be applied to the imaging unit 12031. By applying the technology described herein to the imaging unit 12031, it becomes possible to obtain high-definition captured images. This makes it possible to perform high-precision control using captured images in the mobile control system.

[0195] (Examples of application to endoscopic surgical systems) The technology described herein (the technology) can be applied to various products. For example, the technology described herein may be applied to endoscopic surgical systems.

[0196] Figure 35 is a diagram showing an example of a schematic configuration of an endoscopic surgical system to which the technology described herein (the technology) may be applied.

[0197] Figure 35 illustrates a surgeon (physician) 11131 performing surgery on a patient 11132 on a patient bed 11133 using an endoscopic surgical system 11000. As shown in the figure, the endoscopic surgical system 11000 consists of an endoscope 11100, other surgical instruments 11110 such as an insufflation tube 11111 and an energy treatment device 11112, a support arm device 11120 for supporting the endoscope 11100, and a cart 11200 equipped with various devices for endoscopic surgery.

[0198] The endoscope 11100 consists of a barrel 11101, the tip of which is inserted into the body cavity of the patient 11132 for a predetermined length, and a camera head 11102 connected to the base end of the barrel 11101. In the illustrated example, the endoscope 11100 is shown as a so-called rigid endoscope having a rigid barrel 11101, but the endoscope 11100 may also be configured as a so-called flexible endoscope having a flexible barrel.

[0199] An opening into which an objective lens is fitted is provided at the tip of the microscope tube 11101. A light source device 11203 is connected to the endoscope 11100, and the light generated by the light source device 11203 is guided to the tip of the microscope tube by a light guide extending inside the microscope tube 11101, and is irradiated through the objective lens towards the object to be observed inside the body cavity of the patient 11132. The endoscope 11100 may be a straight-viewing endoscope, an oblique-viewing endoscope, or a side-viewing endoscope.

[0200] The camera head 11102 contains an optical system and an image sensor. Reflected light from the object being observed (observation light) is focused onto the image sensor by the optical system. The image sensor converts the observation light into electrical signals, generating an electrical signal corresponding to the observation light, i.e., an image signal corresponding to the observed image. This image signal is transmitted as RAW data to the camera control unit (CCU) 11201.

[0201] The CCU 11201 is composed of a CPU (Central Processing Unit), a GPU (Graphics Processing Unit), and other components, and comprehensively controls the operation of the endoscope 11100 and the display device 11202. Furthermore, the CCU 11201 receives an image signal from the camera head 11102 and performs various image processing operations on that image signal, such as development processing (demosaic processing), to display the image based on that image signal.

[0202] The display device 11202 displays an image based on an image signal that has been processed by the CCU 11201, under control from the CCU 11201.

[0203] The light source device 11203 consists of a light source such as an LED (Light Emitting Diode) and supplies illumination light to the endoscope 11100 when photographing the surgical area, etc.

[0204] The input device 11204 is an input interface for the endoscopic surgical system 11000. The user can input various types of information and instructions to the endoscopic surgical system 11000 via the input device 11204. For example, the user can input instructions to change the imaging conditions (type of light, magnification, focal length, etc.) of the endoscope 11100.

[0205] The treatment instrument control device 11205 controls the drive of the energy treatment instrument 11112 for purposes such as tissue cauterization, incision, or blood vessel sealing. The insufflation device 11206 injects gas into the body cavity of the patient 11132 via the insufflation tube 11111 to inflate the body cavity for the purpose of securing a field of view by the endoscope 11100 and securing the operator's workspace. The recorder 11207 is a device capable of recording various information related to the surgery. The printer 11208 is a device capable of printing various information related to the surgery in various formats such as text, images, or graphs.

[0206] The light source device 11203 that supplies illumination light to the endoscope 11100 when photographing the surgical area can be configured as a white light source consisting of, for example, an LED, a laser light source, or a combination thereof. When the white light source is configured as a combination of RGB laser light sources, the output intensity and output timing of each color (each wavelength) can be controlled with high precision, so the white balance of the captured image can be adjusted in the light source device 11203. In this case, it is also possible to capture images corresponding to each of the RGB colors in time-division by irradiating the observation target with laser light from each of the RGB laser light sources in time-division and controlling the drive of the image sensor of the camera head 11102 in synchronization with the irradiation timing. According to this method, a color image can be obtained without providing a color filter on the image sensor.

[0207] Furthermore, the light source device 11203 may be controlled to change the intensity of the light it outputs at predetermined time intervals. By controlling the drive of the image sensor of the camera head 11102 in synchronization with the timing of the change in light intensity, images can be acquired in time-division order, and these images can be combined to generate high dynamic range images without so-called black crushing and white clipping.

[0208] Furthermore, the light source device 11203 may be configured to supply light in a predetermined wavelength band corresponding to special light observation. In special light observation, for example, by utilizing the wavelength dependence of light absorption in body tissue and irradiating with narrow-band light compared to the irradiation light used in normal observation (i.e., white light), so-called narrow-band imaging is performed to image predetermined tissues such as blood vessels on the surface of mucosa with high contrast. Alternatively, in special light observation, fluorescence observation may be performed to obtain an image from fluorescence generated by irradiation with excitation light. In fluorescence observation, excitation light is irradiated onto body tissue and fluorescence from the body tissue is observed (autofluorescence observation), or a reagent such as indocyanine green (ICG) is injected into body tissue and excitation light corresponding to the fluorescence wavelength of the reagent is irradiated onto the body tissue to obtain a fluorescence image. The light source device 11203 may be configured to supply narrow-band light and / or excitation light corresponding to such special light observation.

[0209] Figure 36 is a block diagram showing an example of the functional configuration of the camera head 11102 and CCU 11201 shown in Figure 35.

[0210] The camera head 11102 includes a lens unit 11401, an imaging unit 11402, a drive unit 11403, a communication unit 11404, and a camera head control unit 11405. The CCU 11201 includes a communication unit 11411, an image processing unit 11412, and a control unit 11413. The camera head 11102 and the CCU 11201 are connected to each other via a transmission cable 11400 so that they can communicate with each other.

[0211] The lens unit 11401 is an optical system provided at the connection point with the lens barrel 11101. Observation light taken in from the tip of the lens barrel 11101 is guided to the camera head 11102 and then incident on the lens unit 11401. The lens unit 11401 is composed of a combination of multiple lenses, including a zoom lens and a focus lens.

[0212] The imaging unit 11402 is composed of image sensors. The imaging unit 11402 may consist of one image sensor (a so-called single-chip type) or multiple image sensors (a so-called multi-chip type). If the imaging unit 11402 is composed of multiple chips, for example, each image sensor may generate image signals corresponding to RGB, and these may be combined to obtain a color image. Alternatively, the imaging unit 11402 may be configured to have a pair of image sensors for acquiring image signals for the right eye and left eye, respectively, corresponding to 3D (Dimensional) display. By performing 3D display, the surgeon 11131 can more accurately grasp the depth of the biological tissue in the surgical area. In addition, if the imaging unit 11402 is composed of multiple chips, multiple lens units 11401 may also be provided corresponding to each image sensor.

[0213] Furthermore, the imaging unit 11402 does not necessarily have to be located on the camera head 11102. For example, the imaging unit 11402 may be located inside the lens barrel 11101, directly behind the objective lens.

[0214] The drive unit 11403 is composed of actuators and, under control from the camera head control unit 11405, moves the zoom lens and focus lens of the lens unit 11401 along the optical axis by a predetermined distance. This allows the magnification and focus of the image captured by the imaging unit 11402 to be adjusted as appropriate.

[0215] The communication unit 11404 is composed of communication devices for sending and receiving various types of information with the CCU 11201. The communication unit 11404 transmits the image signal obtained from the imaging unit 11402 as RAW data to the CCU 11201 via the transmission cable 11400.

[0216] Furthermore, the communication unit 11404 receives a control signal from the CCU 11201 to control the drive of the camera head 11102 and supplies it to the camera head control unit 11405. The control signal includes information about imaging conditions, such as information to specify the frame rate of the captured image, information to specify the exposure value at the time of imaging, and / or information to specify the magnification and focus of the captured image.

[0217] The imaging conditions such as frame rate, exposure value, magnification, and focus may be specified by the user as appropriate, or they may be automatically set by the control unit 11413 of the CCU 11201 based on the acquired image signal. In the latter case, the endoscope 11100 will be equipped with so-called AE (Auto Exposure), AF (Auto Focus), and AWB (Auto White Balance) functions.

[0218] The camera head control unit 11405 controls the drive of the camera head 11102 based on the control signal received from the CCU 11201 via the communication unit 11404.

[0219] The communication unit 11411 is comprised of a communication device for sending and receiving various types of information with the camera head 11102. The communication unit 11411 receives image signals transmitted from the camera head 11102 via the transmission cable 11400.

[0220] Furthermore, the communication unit 11411 transmits control signals to the camera head 11102 to control the driving of the camera head 11102. Image signals and control signals can be transmitted by telecommunications, optical communications, etc.

[0221] The image processing unit 11412 performs various image processing operations on the image signal, which is RAW data transmitted from the camera head 11102.

[0222] The control unit 11413 performs various controls related to imaging the surgical area, etc., by the endoscope 11100, and the display of the images obtained from imaging the surgical area, etc. For example, the control unit 11413 generates a control signal to control the driving of the camera head 11102.

[0223] Furthermore, the control unit 11413 displays the captured image showing the surgical area, etc., on the display device 11202 based on the image signal processed by the image processing unit 11412. At this time, the control unit 11413 may recognize various objects in the captured image using various image recognition technologies. For example, the control unit 11413 can recognize surgical instruments such as forceps, specific biological sites, bleeding, mist when using the energy treatment device 11112, etc., by detecting the shape and color of the edges of objects included in the captured image. When the control unit 11413 displays the captured image on the display device 11202, it may use the recognition results to superimpose various surgical support information onto the image of the surgical area. By superimposing the surgical support information and presenting it to the surgeon 11131, the burden on the surgeon 11131 can be reduced, and the surgeon 11131 can proceed with the surgery reliably.

[0224] The transmission cable 11400 connecting the camera head 11102 and the CCU 11201 is an electrical signal cable compatible with electrical signal communication, an optical fiber compatible with optical communication, or a composite cable thereof.

[0225] In the illustrated example, communication was performed via a wired connection using a transmission cable 11400, but communication between the camera head 11102 and the CCU 11201 may be performed wirelessly.

[0226] The above describes an example of an endoscopic surgical system to which the technology described herein may be applied. The technology described herein can be suitably applied, for example, to the imaging unit 11402 provided on the camera head 11102 of the endoscope 11100. By applying the technology described herein to the imaging unit 11402, it becomes possible to provide a high-definition endoscope 11100.

[0227] Although the present disclosure has been described above with reference to embodiments, modifications, application examples, and application examples, the present technology is not limited to the above embodiments, and various modifications are possible. For example, although the above modifications were described as modifications of the above embodiments, the configurations of each modification can be combined as appropriate.

[0228] In the embodiments described above, an imaging device was used as an example; however, the light detection device of this disclosure may be any device that receives incident light and converts the light into an electric charge. The output signal may be an image information signal or a distance measurement information signal. The light detection device (imaging device) can be applied to an image sensor, a distance measurement sensor, etc. Furthermore, this disclosure is not limited to back-illuminated image sensors, but is also applicable to front-illuminated image sensors.

[0229] The light detection device according to this disclosure can also be used as a distance measuring sensor capable of measuring distance using the TOF (Time Of Flight) method. The light-receiving element (photoelectric conversion unit) of each pixel may be an APD (Avalanche Photo Diode). The light-receiving element may be composed of, for example, a SPAD (Single Photon Avalanche Diode). The light detection device (imaging device) can also be used as a sensor capable of detecting events, for example, an event-driven sensor (also called an EVS (Event Vision Sensor), EDS (Event Driven Sensor), DVS (Dynamic Vision Sensor), etc.).

[0230] An optical detection device according to one embodiment of the present disclosure comprises a semiconductor layer having a first surface and a second surface opposite to the first surface; an optical layer provided on the first surface side of the semiconductor layer; a wiring layer provided on the second surface side of the semiconductor layer; a first region having a plurality of pixels, each including a photoelectric conversion element provided on the semiconductor layer; a second region provided around the first region; a first pad and a second pad provided on the wiring layer in the second region; a first portion provided so as to reach the first pad from the first surface side of the semiconductor layer; a second portion provided so as to reach the second pad from the first surface side of the semiconductor layer; and a first aperture having a third portion provided on the optical layer so as to span the first portion and the second portion. Therefore, it is possible to realize an optical detection device that can suppress an increase in chip size.

[0231] Furthermore, the effects described herein are merely illustrative and not limited to those described herein, and other effects may also exist. In addition, this disclosure may also take the following configuration: (1) A light detection device comprising: a semiconductor layer having a first surface and a second surface opposite to the first surface; an optical layer provided on the first surface side of the semiconductor layer; a wiring layer provided on the second surface side of the semiconductor layer; a first region having a plurality of pixels, each including a photoelectric conversion element, provided on the semiconductor layer; a second region provided around the first region; a first pad and a second pad provided on the wiring layer in the second region; and a first aperture having a first portion provided so as to reach the first pad from the first surface side of the semiconductor layer; a second portion provided so as to reach the second pad from the first surface side of the semiconductor layer; and a third portion provided on the optical layer so as to span the first portion and the second portion. (2) The photodetector according to (1), wherein the first portion is a trench provided to penetrate the semiconductor layer and reach the first pad, and the second portion is a trench provided to penetrate the semiconductor layer and reach the second pad. (3) The photodetector according to (1) or (2), wherein a portion of the semiconductor layer is provided between the first portion and the second portion. (4) The photodetector according to any one of (1) to (3), wherein a portion of the semiconductor layer and a portion of the wiring layer are provided between the first portion and the second portion. (5) The photodetector according to any one of (1) to (4), wherein the width of the third portion is greater than the width of the first portion. (6) The photodetector according to any one of (1) to (5), wherein the distance between the end of the third portion and the end of the first portion in a direction perpendicular to the thickness direction of the semiconductor layer is 2.5 μm or more. (7) The photodetector according to any one of (1) to (6), wherein the third portion has a rectangular or tapered side shape. (8) The photodetector according to any one of (1) to (6), wherein the width of the third portion increases as it moves away from the semiconductor layer. (9) The photodetector according to any one of (1) to (6), wherein the third portion has a stepped side shape.(10) The photodetector according to any one of (1) to (9), wherein the first and second portions each have a rectangular side shape or a tapered shape. (11) The photodetector according to any one of (1) to (9), wherein the width of the first portion increases as it moves away from the first pad. (12) The photodetector according to any one of (1) to (11), further comprising a third pad provided in the wiring layer in the second region and a second opening having a portion provided so as to reach the third pad from the first surface side of the semiconductor layer. (13) The photodetector according to any one of (1) to (12), wherein the thickness of the optical layer is 3 μm or more. (14) The photodetector according to any one of (1) to (13), wherein the optical layer comprises a first layer having a light guide member and a second layer as a spacer layer provided between the first layer and the semiconductor layer. (15) The optical layer is a light-gathering layer that gathers light, and the photoelectric conversion element is a photoelectric conversion element that converts light incident through the first layer and the second layer into photoelectric light, as described in (14). (16) The light-guide member is a structure and a member having a refractive index different from that of the structure, and the light-gathering member is a light-gathering device as described in (14) or (15). (17) The light-guide member is a lens that gathers light, and the light-guide member is provided in the first layer for each pixel or for each of the plurality of pixels, as described in (14) or (15). (18) The wiring layer is a plurality of pads including the first pad and the second pad in the second region, and the first opening is provided in the second region so as to expose each of the plurality of pads, as described in any one of (1) to (17). (19) The photodetector according to any one of (1) to (18) wherein a plurality of the second regions are provided around the first region.(20) Electronic device comprising an optical system and a light detection device for receiving light transmitted through the optical system, wherein the light detection device comprises: a semiconductor layer having a first surface and a second surface opposite to the first surface; an optical layer provided on the first surface side of the semiconductor layer; a wiring layer provided on the second surface side of the semiconductor layer; a first region having a plurality of pixels, each including a photoelectric conversion element, provided on the semiconductor layer; a second region provided around the first region; a first pad and a second pad provided on the wiring layer in the second region; a first aperture having a first portion provided so as to reach the first pad from the first surface side of the semiconductor layer; a second portion provided so as to reach the second pad from the first surface side of the semiconductor layer; and a third portion provided on the optical layer so as to span the first portion and the second portion.

[0232] This application claims priority based on Japanese Patent Application No. 2025-020326, filed with the Japan Patent Office on 10 February 2025, and all contents of that application are incorporated herein by reference.

[0233] Those skilled in the art will understand that various modifications, combinations, subcombinations, and changes can be conceived depending on design requirements and other factors, and that these fall within the scope of the attached claims and their equivalents.

Claims

1. A light detection device comprising: a semiconductor layer having a first surface and a second surface opposite to the first surface; an optical layer provided on the first surface side of the semiconductor layer; a wiring layer provided on the second surface side of the semiconductor layer; a first region having a plurality of pixels, each including a photoelectric conversion element, provided on the semiconductor layer; a second region provided around the first region; a first pad and a second pad provided on the wiring layer in the second region; and a first aperture having a first portion provided so as to reach the first pad from the first surface side of the semiconductor layer; a second portion provided so as to reach the second pad from the first surface side of the semiconductor layer; and a third portion provided on the optical layer so as to span the first portion and the second portion.

2. The photodetector according to claim 1, wherein the first portion is a trench provided to penetrate the semiconductor layer and reach the first pad, and the second portion is a trench provided to penetrate the semiconductor layer and reach the second pad.

3. The photodetector according to claim 1, wherein a portion of the semiconductor layer is provided between the first portion and the second portion.

4. The photodetector according to claim 1, wherein a portion of the semiconductor layer and a portion of the wiring layer are provided between the first portion and the second portion.

5. The photodetector according to claim 1, wherein the width of the third portion is greater than the width of the first portion.

6. The photodetector according to claim 1, wherein the distance between the end of the third portion and the end of the first portion in a direction perpendicular to the thickness direction of the semiconductor layer is 2.5 μm or more.

7. The photodetector according to claim 1, wherein the third portion has a rectangular or tapered side shape.

8. The photodetector according to claim 1, wherein the width of the third portion increases as it moves away from the semiconductor layer.

9. The photodetector according to claim 1, wherein the third portion has a stepped side shape.

10. The photodetector according to claim 1, wherein the first part and the second part each have a rectangular side shape or a tapered shape.

11. The photodetector according to claim 1, wherein the width of the first portion increases as it moves away from the first pad.

12. The photodetector according to claim 1, further comprising a third pad provided in the wiring layer in the second region, and a second opening having a portion that extends from the first surface side of the semiconductor layer to the third pad.

13. The photodetector according to claim 1, wherein the thickness of the optical layer is 3 μm or more.

14. The photodetector according to claim 1, wherein the optical layer comprises a first layer having a light guide member and a second layer as a spacer layer provided between the first layer and the semiconductor layer.

15. The photodetector according to claim 14, wherein the optical layer is a light-gathering layer that focuses light, and the photoelectric conversion element converts the light incident on the first layer and the second layer into photoelectric light.

16. The light detection device according to claim 14, wherein the light guide member comprises a structure and a member having a refractive index different from that of the structure, and collects incident light.

17. The light detection device according to claim 14, wherein the light guide member is a lens for focusing light, and the light guide member is provided in the first layer for each pixel or for each of the plurality of pixels.

18. The photodetector according to claim 1, wherein the wiring layer has a plurality of pads in the second region, including the first pad and the second pad, and the first opening is provided in the second region such that each of the plurality of pads is exposed.

19. The photodetector according to claim 1, wherein a plurality of the second regions are provided around the first region.

20. Electronic device comprising an optical system and a light detection device for receiving light transmitted through the optical system, wherein the light detection device comprises: a semiconductor layer having a first surface and a second surface opposite to the first surface; an optical layer provided on the first surface side of the semiconductor layer; a wiring layer provided on the second surface side of the semiconductor layer; a first region having a plurality of pixels, each including a photoelectric conversion element, provided on the semiconductor layer; a second region provided around the first region; a first pad and a second pad provided on the wiring layer in the second region; and a first aperture having a first portion provided so as to reach the first pad from the first surface side of the semiconductor layer; a second portion provided so as to reach the second pad from the first surface side of the semiconductor layer; and a third portion provided on the optical layer so as to span the first portion and the second portion.

Images