Copper alloy and electronic component

Abstract

This copper alloy contains 1.5-5.0 mass% Ti, with the remainder comprising Cu and unavoidable impurities, wherein the ratio, I(220) / I0(220), of the integrated intensity I(220) of a (220)-plane peak obtained by X-ray diffraction analysis of a surface of the copper alloy to the integrated intensity I0(220) of a (220)-plane peak obtained by X-ray diffraction analysis of a standard pure-copper powder is 2.00 or higher but less than 5.64.

Description

Copper alloy and electronic component

[0001] This specification describes a copper alloy and an electronic component.

[0002] A copper alloy containing Ti (so-called titanium copper) has excellent stress relaxation characteristics and relatively high strength among copper alloys, and thus may be used in switches, connectors, jacks, terminals, relays, and other electronic components used in electronic devices.

[0003] For example, Patent Document 1 discloses a titanium copper having excellent stress relaxation characteristics. In this titanium copper, the orientation difference (GOS) and its area ratio within the crystal grains calculated by EBSD measurement with respect to the rolling surface, and the area ratio of the crystal grains having a Schmidt factor of a predetermined value are within specific ranges, respectively.

[0004] Japanese Unexamined Patent Application Publication No. 2020-066756

[0005] When stress is applied to the material (for example, copper alloy) used in an electronic component during the operation of an electronic device incorporating the electronic component, if the anisotropy of the Young's modulus of the material is large, there is a concern that malfunction of the electronic device may occur.

[0006] The object of this specification is to provide a copper alloy with reduced anisotropy of Young's modulus and an electronic component.

[0007] One copper alloy of the present disclosure contains 1.5% by mass to 5.0% by mass of Ti, and the balance consists of Cu and unavoidable impurities, and the ratio (I(220) / I0(220)) of the integrated intensity I(220) of the peak of the (220) plane obtained by X-ray diffraction measurement of the surface of the copper alloy to the integrated intensity I0(220) of the peak of the (220) plane obtained by X-ray diffraction measurement of the pure copper standard powder is 2.00 or more and less than 5.64.

[0008] Another copper alloy of the present disclosure contains 1.5% by mass to 5.0% by mass of Ti, and the balance consists of Cu and unavoidable impurities, and the ratio (B / A) of the Young's modulus B in the direction perpendicular to the rolling direction to the Young's modulus A in the direction parallel to the rolling direction is more than 0.80 and less than 1.17.

[0009] The electronic components of this disclosure include any of the copper alloys described above.

[0010] The copper alloys disclosed herein have reduced anisotropy in Young's modulus.

[0011] This graph shows an example of an X-ray diffraction profile to explain the integrated intensity of the diffraction peak obtained by X-ray diffraction measurement. This is a diagram illustrating a test apparatus for measuring the Young's modulus of a copper alloy. This is a diagram illustrating a method for measuring the Young's modulus of a copper alloy.

[0012] The copper alloy and electronic components of this embodiment will be described in detail below. In this specification, for any numerical values ​​A and B, the range "A to B" means "greater than or equal to A and less than or equal to B".

[0013] Both the copper alloys of the first and second embodiments are copper alloys containing 1.5% to 5.0% by mass of Ti, with the remainder being Cu and unavoidable impurities. In the copper alloy of the first embodiment, the ratio (I(220) / I0(220)) of the integrated intensity I(220) of the peak of the (220) plane obtained by X-ray diffraction measurement on the surface of the copper alloy to the integrated intensity I(220) of the peak of the (220) plane obtained by X-ray diffraction measurement on a pure copper standard powder is 2.00 or more and less than 5.64. The second embodiment will be described later. Hereinafter, when "this embodiment" is used, it mainly refers to the first embodiment.

[0014] Both the copper alloys of the first and second embodiments exhibit low anisotropy in Young's modulus. This suppresses variations in deformation depending on the direction of stress application, enabling a more uniform stress-strain response. Consequently, malfunctions in electronic devices can be prevented.

[0015] (Composition) The Ti content of the copper alloy is 1.5% by mass to 5.0% by mass. Copper alloys containing Ti have increased strength and conductivity because Ti is dissolved in the Cu matrix by solution treatment during manufacturing, and fine precipitates are dispersed in the alloy by aging treatment. If the Ti content is less than 1.5% by mass, the precipitation of precipitates is insufficient and the desired strength cannot be obtained. If the Ti content exceeds 5.0% by mass, the workability decreases and the alloy becomes prone to cracking during rolling. Considering the balance between strength and workability, the Ti content may be 2.9% by mass to 4.3% by mass. The copper alloy may further contain at least one element selected from the group consisting of Al, Ag, B, Ca, Co, Cr, Fe, Ge, Hf, La, Mg, Mn, Mo, Nb, Ni, P, S, Si, Sn, Ta, V, W, Y, Zn, and Zr (hereinafter also referred to as "additional elements"). To suppress the decrease in the workability of the copper alloy, the total content of additional elements shall be 1.0 mass% or less.

[0016] The copper alloy containing additional elements contains Ti and the additional elements, with the remainder being Cu and unavoidable impurities.

[0017] Among the additional elements mentioned above, Fe, Co, Ni, Si, Cr, and V may be added for purposes such as increasing strength by refining the recrystallized grains that occur during solution treatment. When the copper alloy contains Fe, it is preferable that the Fe content be 1.0% by mass or less.

[0018] The copper alloy does not need to contain additional elements. In this case, the copper alloy contains Ti, with the remainder consisting of Cu and unavoidable impurities.

[0019] Inevitable impurities that may be present in copper alloys refer to impurity elements that cannot be avoided during the manufacturing process of copper alloys.

[0020] The composition of copper alloys can be measured using an X-ray fluorescence analyzer. Specifically, a Simultix 14 manufactured by Rigaku Corporation or an equivalent device can be used as the X-ray fluorescence analyzer. The analysis surface of the copper alloy should be cut or mechanically polished so that the maximum surface roughness Rz (JIS B0601 (2013)) is 6.3 μm or less. When taking a sample for X-ray fluorescence analysis from molten copper alloy obtained by melting, the molten metal should be cast into a shape of approximately 30-40 mm in diameter and 50-80 mm in thickness, then cut to a thickness of approximately 10-20 mm, and the cut surface should be used as the analysis surface. X-ray fluorescence analysis should be performed using the wavelength dispersion method in accordance with JIS K0119 (2008).

[0021] The composition of copper alloys can also be measured by wet analysis. Ti may be measured using hydrogen peroxide spectrophotometry (JIS H1073) or ICP emission spectrometry. Other additive elements and impurity elements may be measured using ICP emission spectrometry, and the analysis of other additive elements is performed using the internal standard method, with Y (yttrium) used as the internal standard. An element other than Y may be selected as the internal standard. ICP emission spectrometry is performed using an ICP emission spectrometer (ICP-OES) SPS3100 manufactured by Hitachi High-Tech Science Corporation or an equivalent instrument. In the case of ICP emission spectrometry, the copper alloy sample is dissolved in a mixed acid containing hydrochloric acid and nitric acid (hydrochloric acid, nitric acid, and water in a volume ratio of 2:1:2), and the diluted solution is used.

[0022] (Integrated intensity of X-ray diffraction peak) When the surface of a copper alloy is measured by X-ray diffraction, an X-ray diffraction profile (X-ray diffraction intensity curve) is obtained on a graph where the horizontal axis is the diffraction angle and the vertical axis is the intensity.

[0023] In the copper alloy of this embodiment, the ratio (I(220) / I0(220)) of the integrated intensity I(220) of the peak of the (220) plane obtained from X-ray diffraction measurement on the surface of the copper alloy to the integrated intensity I(220) of the peak of the (220) plane obtained from X-ray diffraction measurement on pure copper standard powder in the above-described X-ray diffraction profile is 2.00 or more and less than 5.64. This makes it possible to reduce the anisotropy of the Young's modulus of the copper alloy. As a result, the reliability of the connection part of the electronic component can be improved. The ratio of the integrated intensity may preferably be 2.50 or more and 5.00 or less, and more preferably 4.00 or more and 4.50 or less.(X-ray diffractometer configuration and conditions) ・X-ray diffractometer: Rigaku Corporation SmartLab or equivalent analytical device ・X-ray tube: Cobalt (3kW sealed tube) ・X-ray wavelength: Kα1 (0.1789 nm) ・Optical system: Focusing method ・Tube voltage: 40 kV ・Tube current: 25 mA ・Induction solar slit: 2.5° ・Induction slit: 1 / 2° ・Longitudinal limiting slit: 10 mm ・Receiving slit 1: 20 mm ・Receiving solar slit: 2.5° ・Receiving slit 2: OPEN ・Attenuator: OPEN ・Detector: 1D detector D / teX Ultra 250 (1D mode) ・Kβ filter: 1D filter for Co (Fe 0.019 mm) ・Vacuum level: 1.00E-5 Pa ・Distance table settings (1) to (8) (1) X-ray source - mirror section distance: 90 mm (2) X-ray source - selection slit section distance: 114 mm (3) X-ray source - IS (entry slit) section distance: 173.5 mm (4) X-ray source - sample section distance: 300 mm (5) Sample - RS (receiving slit) 1 section distance: 187 mm (6) Sample - RS (receiving slit) 2 section distance: 300 mm (7) RS (receiving slit) 1 - RS (receiving slit) 2 section distance: 113 mm (8) Sample - detector section distance: 331 mm (Analysis conditions in software) - Control software: XRD Measurement Plugin - Basic data processing: Data Manager Plugin - Analysis: PowderXRD Plugin <2θ-θ measurement> - Sample information - Thickness: 0.15 mm・Size: 20mm square ・Crystal system: Cubic ・Linear absorption coefficient: 727.872 (1 / cm) ・Fine copper powder: Pure copper (powder, 2N5, Cat. No. 07439-08, Grade 1, purity over 99.5%, particle size 325 mesh pass) manufactured by Kanto Chemical Co., Ltd. is processed into a tablet shape by pressing it with a press machine at a pressure of 400 kgf / cm2 and used for measurement. <Measurement conditions> ・Measurement hkl: 220 ・Measurement angle 2θ: 86.5 to 91.5° ・Scanning mode: FT scan ・Counting time: 10° / min ・Sampling step: 0.02° ・γ fluctuation: Yes <Analysis conditions> ・Check the checkboxes for the following items and enter the various data.- Peak search preprocessing (customized) Background removal: Fitting method Kα2 removal: 0.4970 Smoothing: Smoothing by B-spline χ threshold: 1.50 Method: Second derivative method σ cut value: 3 - Profile fitting Peak shape: Split type pseudo-Voigt function Background type: B-spline fitting conditions: Automatic background refinement.

[0024] The reason we are considering the (220) plane as the crystal plane here is because it is known as the orientation in which the (220) plane develops through rolling.

[0025] The integrated intensity I(220) is the integral value of the peak in the X-ray diffraction profile of the (220) crystal plane, and corresponds to the area of ​​the hatched region in Figure 1.

[0026] (Electrical Conductivity) The electrical conductivity of the copper alloy in this embodiment may be 8.0% IACS or higher, 10.0% IACS or higher, 13.2% IACS or higher, or 15.0% IACS or higher. In recent years, with the increasing performance of electronic devices, the amount of heat generated by electronic components during operation tends to increase, and therefore, high heat dissipation is required. Generally, the higher the electrical conductivity of a metal material, the higher its thermal conductivity. Therefore, from the viewpoint of improving the heat dissipation of electronic components, a copper alloy with high electrical conductivity is desired.

[0027] The electrical conductivity of copper alloys is measured using the four-terminal method in accordance with JIS H0505 (1975). A double bridge is used for measurement, and resistance is measured based on the average cross-sectional area method. The electrical conductivity of the copper alloy is measured at room temperature (25°C) in a direction parallel to the rolling direction. The gauge length (distance between electrical resistance measurements) is 50 mm.

[0028] (Tensile Strength) The tensile strength of the copper alloy in this embodiment may be 900 MPa or more, 950 MPa or more, 970 MPa or more, or 1020 MPa or more. The upper limit of the tensile strength of the copper alloy is not particularly limited, but for example it may be 1100 MPa or less, 1050 MPa or less, or 1030 MPa or less.

[0029] Tensile strength is measured using a tensile testing machine in accordance with JIS Z2241 (2011), in a direction parallel to the rolling direction. Specifically, a JIS 13B test specimen is prepared from each sample using a press so that the tensile direction is parallel to the rolling direction. The conditions for the tensile test were a specimen width of 12.5 mm, a measurement temperature of room temperature (15-35°C), a tensile speed (crosshead displacement speed) of 5 mm / min, and a gauge length of 50 mm. The test was performed on two specimens, and the average of the two data points was taken as the tensile strength value of the material.

[0030] (0.2% proof stress) The 0.2% proof stress of the copper alloy in this embodiment may be 850 MPa or more, 900 MPa or more, or 909 MPa or more. The upper limit of the 0.2% proof stress of the copper alloy is not particularly limited, but for example it may be 1100 MPa or less, 1050 MPa or less, 1000 MPa or less, or 950 MPa or less.

[0031] The 0.2% proof stress refers to the 0.2% proof stress in the direction parallel to the rolling direction of the copper alloy, and can be measured in the same manner as the tensile strength described above.

[0032] (Young's Modulus) In the copper alloy of this embodiment, the ratio of Young's modulus B in the direction perpendicular to the rolling direction to Young's modulus A in the direction parallel to the rolling direction (B / A) may be greater than 0.80 and less than 1.17. Such a copper alloy has low anisotropy of Young's modulus, which can prevent malfunctions in electronic equipment. The above ratio of Young's moduli (B / A) may preferably be 0.90 or more and 1.10 or less.

[0033] The Young's modulus A in the direction parallel to the rolling direction and the Young's modulus B in the direction perpendicular to the rolling direction may both be 100 GPa or more and 150 GPa or less. Young's modulus A may be 110 GPa or more and 123 GPa or less, or 115 GPa or more and 118 GPa or less.

[0034] The Young's modulus B may be 115 GPa or more and 126 GPa or less, or 120 GPa or more and 121 GPa or less.

[0035] The Young's modulus of copper alloys can be measured according to the following procedure, based on JCBA-T312 (2002). The test apparatus used is one with functions equivalent to those of JIS H3130 (2018) 8.4. First, a sample of copper alloy is taken so that its longitudinal direction is parallel to the measurement direction. The sample is rectangular with a longitudinal direction of 100 mm and a transverse direction of 10 mm. Next, the measurement length (L) is set to 100 times the plate thickness, and the sample is fixed parallel to the test apparatus as shown in Figure 2. The length of the dial gauge arm is also fixed to match the measurement length. Subsequently, the dial gauge scale is set to the reference value (0), and the dial gauge fixing part is adjusted up and down until the point where the contact needle touches the sample is used as the reference. Then, a weight (15 g) is placed so as to sandwich the tip of the dial gauge's contact needle, and the amount of deflection (f) is measured by lowering the dial gauge's contact needle. Young's modulus (GPa) is given by the formula: 4W / b × (L / t) 3 It is defined by the value calculated by × 1 / f. In the formula, W is the weight of the weight (N), L is the measurement length (mm), f is the deflection amount (mm), b is the sample width (mm), and t is the sample plate thickness (mm). The same sample is tested upside down, and the average of the two data points is taken as the Young's modulus of the material. If the plate thickness is less than 0.08 mm, the above procedure can be replaced by the cantilever resonance method described below, based on JIS Z2280 (1993). The test apparatus used is a cantilever thin plate Young's modulus measuring device (TE-RT) manufactured by Nippon Techno Plus Co., Ltd. or an equivalent device.

[0036] First, a sample of copper alloy is taken so that its longitudinal direction is parallel to the measurement direction. The sample is rectangular in shape, with a longitudinal direction of 15 mm and a transverse direction of 3.2 mm. Next, the sample is mounted on the test apparatus so that its longitudinal direction is vertical, as shown in Figure 3. At this time, the vibration length (l) is adjusted to be approximately 8 mm. The distance between the sample and the sensor is adjusted to be approximately 1 mm, and the distance between the sample and the electrode is adjusted to be approximately 0.5 mm. Then, a voltage is applied between the sensor and the electrode to generate a first-order natural vibration, and the Young's modulus is determined from the resonant frequency (f) at that time. The test is performed on 20 samples, and the average value of the 20 data points is taken as the Young's modulus of the material.

[0037] (Shape) The shape of the copper alloy in this embodiment may be a strip or a plate. That is, the copper alloy in this embodiment may be a copper alloy strip or a copper alloy plate. When the thickness of the copper alloy plate is thin (for example, less than 0.10 mm), it may be called a copper alloy foil.

[0038] The thickness of the copper alloy in this disclosure may be 0.50 mm or less. From the viewpoint of miniaturizing electronic components, the thickness of the copper alloy may be 0.20 mm or less, or 0.15 mm or less.

[0039] The thickness of the copper alloy is measured using a micrometer in accordance with JIS B7502. A Mitutoyo BMS-25MX or equivalent micrometer is used.

[0040] (Second Embodiment) The copper alloy of the second embodiment will be described in detail below. However, matters that overlap with the first embodiment described above will be omitted as appropriate.

[0041] The copper alloy of the second embodiment is a copper alloy containing 1.5% to 5.0% by mass of Ti, with the remainder being Cu and unavoidable impurities. In this copper alloy, the ratio of Young's modulus B in the direction perpendicular to the rolling direction to Young's modulus A in the direction parallel to the rolling direction (B / A) is greater than 0.80 and less than 1.17.

[0042] The copper alloy of the second embodiment has low anisotropy in Young's modulus. This suppresses variations in deformation amount depending on the direction of stress application, enabling a more uniform stress-strain response. Therefore, malfunctions in electronic devices can be prevented. The ratio of Young's moduli (B / A) may preferably be 0.90 or higher and 1.10 or lower.

[0043] The Young's modulus A in the direction parallel to the rolling direction and the Young's modulus B in the direction perpendicular to the rolling direction may both be 100 GPa or more and 150 GPa or less.

[0044] The Young's modulus A may be 110 GPa or more and 123 GPa or less, or may be 115 GPa or more and 118 GPa or less. The Young's modulus B may be 115 GPa or more and 126 GPa or less, or may be 120 GPa or more and 121 GPa or less.

[0045] In the copper alloy of the second embodiment, the ratio (I(220) / I0(220)) of the integrated intensity I(220) of the peak of the (220) plane obtained by X-ray diffraction measurement of the surface of the copper alloy to the integrated intensity I0(220) of the peak of the (220) plane obtained by X-ray diffraction measurement of the pure copper standard powder is preferably 2.00 or more and less than 5.64. The ratio of the integrated intensity may more preferably be 2.50 or more and 5.00 or less, and may further preferably be 4.00 or more and 4.50 or less.

[0046] (Manufacturing method) An example of a method for manufacturing the copper alloy as described above is as follows.

[0047] First, in a melting furnace, a copper raw material such as electrolytic copper, a titanium raw material, and a raw material of an optional additional element are melted to obtain a molten metal having a desired composition. Next, this molten metal is cooled and solidified to cast an ingot. In order to prevent oxidation of titanium, it is preferable to perform melting and casting in a vacuum or an inert gas atmosphere.

[0048] For the obtained ingot, for example, each step of heat treatment (homogenization treatment), hot rolling, first cold rolling, heat treatment (solution treatment), finish cold rolling, and heat treatment (aging treatment) is performed in this order. Between the first cold rolling and the solution treatment, heat treatment and cold rolling for the purpose of solutionization, recrystallization, etc. may be performed. In at least one of the plurality of cold rollings, rolling in a plurality of passes may be performed.

[0049] The temperature of the solution treatment may be 700°C to 1000°C, typically 750°C to 900°C. Also, the time of the solution treatment may be 5 seconds to 30 minutes, typically 5 seconds to 300 seconds (5 minutes).

[0050] To ensure sufficient strength in the copper alloy, the degree of finishing cold rolling should be within the range of 1 to 98%. More preferably, the degree of finishing cold rolling should be between 5 and 95%, and even more preferably between 7 and 90%. The degree of cold rolling (%) is calculated using the formula: (T0 - T1) / T0 × 100, where T0 is the thickness before rolling and T1 is the thickness after rolling.

[0051] To minimize the anisotropy of Young's modulus, the conditions for finish cold rolling are adjusted so that X, expressed by the following equation (1), is less than 2: X = (P(111)_TD / P(110)_TD) × (YS / TS) ... (1)

[0052] In equation (1), P(111)_TD represents the degree of (111) accumulation in the TD direction after finish cold rolling and before heat treatment, P(110)_TD represents the degree of (110) accumulation in the TD direction after finish cold rolling and before heat treatment, YS represents the 0.2% yield strength (MPa) after finish cold rolling and before heat treatment, and TS represents the tensile strength (MPa) after finish cold rolling and before heat treatment. The TD direction (Transverse Direction) means the direction perpendicular to the rolling direction. The method for measuring the degree of accumulation will be described later.

[0053] By performing finish cold rolling so that X is less than 2, the amount of precipitates in subsequent heat treatment increases, ultimately yielding a copper alloy with excellent strength and conductivity, and low Young's modulus anisotropy. The value of X increases with increasing degree of cold rolling. Generally, the degree of reduction of titanium copper tends to increase the concentration ratio in the TD direction (P(111)_TD / P(110)_TD). Also, the degree of reduction of titanium copper tends to increase the yield ratio after cold rolling (YS / TS) to approach 1. Therefore, to reduce the value of X, it can be controlled by reducing the concentration ratio in the TD direction after cold rolling (P(111)_TD / P(110)_TD), the yield ratio after cold rolling (YS / TS), or both. However, it is thought that the value of X may also depend on conditions other than the degree of cold rolling.

[0054] When the value of X is reduced (for example, when the amount of cold rolling is reduced), the ratio of the integrated intensities I(220) of the (220) plane peaks obtained by X-ray diffraction measurement on the surface of the copper alloy (I(220) / I0(220)) decreases.

[0055] For other processes, established conditions can be adopted.

[0056] After each step, the copper alloy surface may be pickled and / or polished as needed to remove the oxide film or oxide layer formed on the surface.

[0057] (Method for measuring the degree of accumulation) First, a copper alloy, after finish cold rolling and before heat treatment, is cut into 20 mm squares with a thickness of 0.15 mm as a sample for measurement. The (111) and (110) degrees of accumulation in the TD direction of the copper alloy are calculated by measuring the positive pole of the rolled surface of the sample using X-ray diffraction. A Rigaku SmartLab or equivalent X-ray diffractometer is used, and the measurement is performed using the Schulz reflection method. The measurement and analysis conditions are shown below. The ODF (Orientation Distribution Function) obtained from the analysis is converted to an IPF (Inverse Pole Figure) in the TD direction, and the pole densities in the (111) and (110) directions are read from there and expressed as the (111) and (110) accumulation in the TD direction, respectively.<Device Configuration> X-ray tube: Cobalt (3kW sealed tube) X-ray wavelength: Kα1 (0.1789 nm) Optical system: Focused method Tube voltage: 40 kV Tube current: 25 mA Entrance solar slit: 2.5° Entrance slit: 1 / 2° Longitudinal limiting slit: 2 mm Receiving slit 1: 10 mm Receiving solar slit: 2.5° Receiving slit 2: 9.975 mm Attenuator: Automatic Detector: 1D detector D / teX Ultra 250 (1D mode) Kβ filter: 1D filter for Co (Fe 0.019 mm) Vacuum level: 1.00E-5 Pa Distance table settings (1) to (8) (1) X-ray source-mirror interval distance: 90 mm (2) X-ray source-selection slit interval distance: 114 mm (3) Distance between X-ray source and IS (entry slit): 173.5 mm (4) Distance between X-ray source and sample: 300 mm (5) Distance between sample and RS (receiving slit) 1: 187 mm (6) Distance between sample and RS (receiving slit) 2: 300 mm (7) Distance between RS (receiving slit) 1 and RS (receiving slit) 2: 113 mm (8) Distance between sample and detector: 331 mm Package measurement selection: Schulz reflection method Software control software: XRD Measurement Plugin Basic data processing: Data Manager Plugin Analysis: Texture Plugin <Polar measurement> Sample information Thickness: 0.15 mm Size: 20 mm square Crystal system: Cubic Line absorption coefficient: 727.872 (1 / cm) Fine powder copper: Purity over 99.5%, particle We use copper powder (2N5) manufactured by Kanto Chemical Co., Ltd., with a size of 75 μm to 150 μm and grade 1.(Cat. No. 07439-08) Pole measurement conditions Measurement hkl: 111, 200, 220 Measurement angle 2θ: 50.8°, 59.4°, 89.0° α axis: range 15 to 90°, step 5.0° β axis: range 0 to 360°, step 5.0° (α: axis perpendicular to the rotation axis of the diffraction goniometer as defined in the Schulz reflection method, β: axis parallel to the rotation axis) Speed: 600° / min Reflection method: Schulz Background measurement: single point measurement Measurement angle 2θ: 47.8°, 56.4°, 86.0° (Each measurement was taken at an angle 3° lower than each measurement angle of the test sample, and other conditions were the same as the test sample) <Pole diagram correction (using SmartLab Studio II Texture)> Check the boxes for the following items and enter the various data. • Background Correction: Select "From External Data" and enter the background measurement results for each HKL mentioned above. • Absorption: Use the sample information values ​​for sample thickness and linear absorption coefficient. • Defocus Correction: Enter the measurement results for copper fine powder measured in advance.・Smoothing: Smoothing factor 1.0 ・Normalization <ODF calculation (using SmartLab Studio II Texture)> Calculation method: WIMV model Sample symmetry: 1 / 4 symmetry α analysis start angle (°): 0.00 α analysis end angle (°): 90.00 ODF grid φ1 step (°): 5.00 Φ step (°): 5.00 φ2 step (°): 5.00 Crystal phase: Cu Maximum repeats: 10 ε: 0.0100 <IPF calculation (using SmartLab Studio II Texture)> Crystal phase: Cu Sample orientation: 001 α step (°): 5.00 β step (°): 5.00 Simulation method: WIMV model.

[0058] (Applications) The above copper alloy can be suitably used as a material for electronic components used in electronic devices. Examples of electronic components include switches, connectors, jacks, terminals, relays, autofocus camera modules, etc. The above copper alloy may be used as a material for connectors, for example. However, the applications are not limited to these.

[0059] The embodiments described above include the copper alloys described in (1) to (14) below and the electronic components described in (15) below. (1) A copper alloy containing 1.5% to 5.0% by mass of Ti, with the remainder being Cu and unavoidable impurities, wherein the ratio (I(220) / I0(220)) of the integrated intensity I(220) of the peak of the (220) plane obtained by X-ray diffraction measurement on the surface of the copper alloy to the integrated intensity I0(220) of the peak of the (220) plane obtained by X-ray diffraction measurement on a pure copper standard powder is 2.00 or more and less than 5.64. (2) The copper alloy described in (1) above, wherein the ratio of the integrated intensities is 2.50 or more and 5.00 or less. (3) The copper alloy described in (2) above, wherein the ratio of the integrated intensities is 4.00 or more and 4.50 or less. (4) A copper alloy according to any one of (1) to (3) above, further containing a total of 1.0 mass% or less of at least one element selected from the group consisting of Al, Ag, B, Ca, Co, Cr, Fe, Ge, Hf, La, Mg, Mn, Mo, Nb, Ni, P, S, Si, Sn, Ta, V, W, Y, Zn, and Zr. (5) A copper alloy according to any one of (1) to (4) above, further containing 1.0 mass% or less of Fe. (6) A copper alloy according to any one of (1) to (5) above, having an electrical conductivity of 8.0% IACS or higher. (7) A copper alloy according to (6) above, having an electrical conductivity of 10.0% IACS or higher. (8) A copper alloy according to any one of (1) to (7) above, having a tensile strength of 900 MPa or higher. (9) A copper alloy according to any one of (1) to (8) above, wherein the 0.2% yield strength is 850 MPa or more. (10) A copper alloy containing 1.5 mass% to 5.0 mass% Ti, with the remainder being Cu and unavoidable impurities, wherein the ratio of Young's modulus B in a direction perpendicular to the rolling direction to Young's modulus A in a direction parallel to the rolling direction (B / A) is greater than 0.80 and less than 1.17. (11) The copper alloy according to (10) above, wherein the ratio of Young's moduli (B / A) is 0.90 or more and 1.10 or less. (12) The copper alloy according to (10) or (11) above, wherein both Young's modulus A and Young's modulus B are 100 GPa or more and 150 GPa or less.(13) A copper alloy according to any one of (10) to (12) above, wherein the ratio (I(220) / I0(220)) of the integrated intensity I(220) of the peak of the (220) plane obtained by X-ray diffraction measurement on the surface of the copper alloy to the integrated intensity I(220) of the peak of the (220) plane obtained by X-ray diffraction measurement on a standard pure copper powder is 2.00 or more and less than 5.64. (14) A copper alloy according to any one of (10) to (13) above, further containing a total of 1.0 mass% or less of at least one element selected from the group consisting of Al, Ag, B, Ca, Co, Cr, Fe, Ge, Hf, La, Mg, Mn, Mo, Nb, Ni, P, S, Si, Sn, Ta, V, W, Y, Zn, and Zr. (15) An electronic component comprising the copper alloy according to any one of (1) to (14) above.

[0060] The following describes the process of fabricating the aforementioned copper alloy and evaluating its performance. However, this description is for illustrative purposes only, and the present invention is not intended to be limited thereto.

[0061] (Example 1) First, electrolytic copper, Ti raw material, and Fe raw material were melted in a vacuum melting furnace to cast an ingot having a predetermined elemental concentration. This ingot was hot-rolled to obtain a strip material with a thickness of 10 mm. Next, the strip material underwent first cold rolling. Then, heat treatment and cold rolling were performed, followed by solution treatment at 800°C, and then finish cold rolling to obtain a plate material with a thickness of 0.15 mm. In the finish cold rolling, the value of X was adjusted to be less than 2 based on the above formula (1). Although X was not measured, it is highly probable that it was less than 2 because the degree of processing was smaller than that of Comparative Example 1. The plate material after cold rolling was heat-treated at 380°C for 5 hours. This yielded the copper alloy plate of Example 1 with a thickness of 0.15 mm.

[0062] (Example 2) In Example 2, finish cold rolling was performed so that the value of X in formula (1) was less than 2. The cold-rolled sheet material was heat-treated at 410°C for 5 hours. Except for these steps, the process was the same as in Example 1, and a copper alloy sheet of Example 2 with a thickness of 0.15 mm was obtained.

[0063] (Example 3) In Example 3, finish cold rolling was performed so that the value of X in formula (1) was 0.88. The cold-rolled sheet material was heat-treated at 410°C for 5 hours. Except for these steps, the process was the same as in Example 1, and a copper alloy sheet of Example 3 with a thickness of 0.15 mm was obtained.

[0064] (Comparative Example 1) First, electrolytic copper and Ti raw materials were melted in a vacuum melting furnace to cast an ingot having a predetermined elemental concentration. This ingot was hot-rolled to obtain a strip material with a thickness of 10 mm. Next, the above strip material was subjected to solution treatment and cold rolling to obtain a strip material with a thickness of 0.1 mm. The obtained strip material was heat-treated at 300°C for the purpose of aging. As a result, a copper alloy plate of Comparative Example 1 with a thickness of 0.1 mm was obtained.

[0065] (Evaluation) For each copper alloy plate of Examples 1 to 3 and Comparative Example 1, the composition, integrated intensity of X-ray diffraction peaks I(220) and I0(220), tensile strength, 0.2% yield strength, conductivity, and Young's modulus were measured using the methods described above. The results are shown in Tables 1 and 2. A Simultix 14 manufactured by Rigaku Corporation was used for compositional analysis, and a SmartLab manufactured by Rigaku Corporation was used for X-ray diffraction measurement. "N.D." in Table 1 means that measurement data is unavailable.

[0066]

[0067]

[0068] Tables 1 and 2 show that the copper alloys of Examples 1 to 3 exhibit improved anisotropy of Young's modulus.

[0069] I. Integrated intensity of the peak

Claims

1. A copper alloy containing 1.5% to 5.0% by mass of Ti, with the remainder being Cu and unavoidable impurities, wherein the ratio (I(220) / I0(220)) of the integrated intensity I(220) of the peak of the (220) plane obtained by X-ray diffraction measurement on the surface of the copper alloy to the integrated intensity I(220) of the peak of the (220) plane obtained by X-ray diffraction measurement on a pure copper standard powder is 2.00 or more and less than 5.

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2. The copper alloy according to claim 1, wherein the ratio of the integrated intensities is 2.50 or more and 5.00 or less.

3. The copper alloy according to claim 2, wherein the ratio of the integrated intensities is 4.00 or more and 4.50 or less.

4. The copper alloy according to claim 1, further containing a total of 1.0 mass% or less of at least one element selected from the group consisting of Al, Ag, B, Ca, Co, Cr, Fe, Ge, Hf, La, Mg, Mn, Mo, Nb, Ni, P, S, Si, Sn, Ta, V, W, Y, Zn, and Zr.

5. The copper alloy according to claim 1, further containing 1.0% by mass or less of Fe.

6. The copper alloy according to claim 1, wherein the conductivity is 8.0% IACS or higher.

7. The copper alloy according to claim 6, wherein the conductivity is 10.0% IACS or higher.

8. The copper alloy according to claim 1, wherein the tensile strength is 900 MPa or more.

9. The copper alloy according to claim 1, wherein the 0.2% yield strength is 850 MPa or more.

10. A copper alloy containing 1.5% to 5.0% by mass of Ti, with the remainder being Cu and unavoidable impurities, wherein the ratio of Young's modulus B in a direction perpendicular to the rolling direction to Young's modulus A in a direction parallel to the rolling direction (B / A) is greater than 0.80 and less than 1.

17.

11. The copper alloy according to claim 10, wherein the ratio of Young's moduli (B / A) is 0.90 or more and 1.10 or less.

12. The copper alloy according to claim 10, wherein both Young's modulus A and Young's modulus B are 100 GPa or more and 150 GPa or less.

13. The copper alloy according to claim 10, wherein the ratio (I(220) / I0(220)) of the integrated intensity I(220) of the peak of the (220) plane obtained by X-ray diffraction measurement on the surface of the copper alloy to the integrated intensity I(220) of the peak of the (220) plane obtained by X-ray diffraction measurement on a standard pure copper powder is 2.00 or more and less than 5.

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14. The copper alloy according to claim 10, further containing a total of 1.0 mass% or less of at least one element selected from the group consisting of Al, Ag, B, Ca, Co, Cr, Fe, Ge, Hf, La, Mg, Mn, Mo, Nb, Ni, P, S, Si, Sn, Ta, V, W, Y, Zn, and Zr.

15. An electronic component comprising the copper alloy described in claim 1, 2, 10, or 11.

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