Film forming method and processing system

Abstract

A film forming method according to one aspect of the present disclosure involves: (a) a step for preparing a substrate having a recess; (b) a step for supplying a first gas containing a silicon-containing compound to form, in the recess, a first fluid film containing silicon; (c) a step for heat-treating the first fluid film while supplying a second gas containing a silicon-containing compound; and (d) a step for repeating the step (b) and the step (c) multiple times.

Claims

1. A film formation method comprising: (a) preparing a substrate having recesses; (b) supplying a first gas containing a silicon-containing compound to form a first fluidized film containing silicon in the recesses; (c) heat-treating the first fluidized film while supplying a second gas containing a silicon-containing compound; and (d) repeating steps (b) and (c) multiple times.

2. (e) The method for forming a film according to claim 1, further comprising a step of removing a portion of the first fluidized film between step (b) and step (c), wherein step (d) is a multiple repetition of step (b), step (e), and step (c) in this order.

3. (f) The method for forming a film according to claim 1 or 2, further comprising the step of supplying a third gas containing a silicon-containing compound between step (a) and step (b) to form an adhesive film on the side surface and bottom surface of the recess.

4. A film-forming method according to claim 1 or 2, further comprising: (g) after step (d) above, supplying a fourth gas containing a silicon-containing compound to form a second fluidized film on the first silicon-containing film obtained by heat treatment of the first fluidized film; and (h) heat-treating the second fluidized film while supplying a fifth gas containing a silicon-containing compound.

5. The film formation method according to claim 1 or claim 2, wherein in step (c), the second gas is supplied before the time when the heat treatment of the first fluidized film is started.

6. The film formation method according to claim 4, wherein the temperature of the substrate in step (h) is higher than the temperature of the substrate in step (c).

7. The film formation method according to claim 4, wherein in step (h), the fifth gas is supplied before the time when the heat treatment of the second fluidized film is started.

8. The film formation method according to claim 1 or claim 2, wherein the silicon-containing compound contained in the second gas is a tetrasilane or an inorganic silane compound of a lower order than tetrasilane.

9. The film formation method according to claim 1 or claim 2, wherein the silicon-containing compound contained in the first gas is tetrasilane or an inorganic silane compound of a higher order than tetrasilane.

10. The method for forming a film according to claim 1 or 2, wherein step (b) comprises supplying the first gas and a processing gas comprising at least one of hydrogen gas, nitrogen gas, oxygen gas, ozone gas, ammonia gas, helium gas, argon gas, and krypton gas, and exposing the substrate to a plasma generated from the processing gas.

11. The film formation method according to claim 1 or claim 2, wherein in step (b), the temperature of the substrate is -100°C or higher and 0°C or lower, and the processing pressure is 0.1 Torr or higher and 10 Torr or lower.

12. The film formation method according to claim 1 or claim 2, wherein in step (c), the temperature of the substrate is 150°C or more and 250°C or less, and the processing pressure is 0.5 Torr or more and 100 Torr or less.

13. The film formation method according to claim 2, wherein in step (e), the temperature of the substrate is -100°C or higher and 100°C or lower, and the processing pressure is 0.1 Torr or higher and 10 Torr or lower.

14. The film formation method according to claim 6, wherein in step (h), the temperature of the substrate is 150°C or more and 450°C or less, and the processing pressure is 0.5 Torr or more and 100 Torr or less.

15. A processing system comprising: a processing container configured to accommodate a substrate having a recess; a supply unit for supplying gas into the processing container; and a control unit, wherein the control unit controls the supply unit to perform the following steps: supplying a first gas containing a silicon-containing compound to form a first fluidized film containing silicon in the recess; heat-treating the first fluidized film while supplying a second gas containing a silicon-containing compound; and repeating the steps of forming the first fluidized film and heat-treating the first fluidized film multiple times.

Images