Particle measurement method, particle measurement apparatus, and processing system
Patent Information
- Authority / Receiving Office
- WO · WO
- Patent Type
- Applications
- Current Assignee / Owner
- Filing Date
- 2026-01-27
- Publication Date
- 2026-08-13
Smart Images
Figure JP2026002547_13082026_PF_FP_ABST
Abstract
Description
Particle measurement method, particle measurement device, and processing system
[0001] The present disclosure relates to a particle measurement method, a particle measurement device, and a processing system.
[0002] For example, Patent Document 1 discloses a high-temperature condensation particle counter (HT-CPC) having significantly improved particle counting statistics compared to prior art systems due to the disclosed sample flow of the HT-CPC being at least eight times larger than that of the prior art.
[0003] Japanese Patent Application Laid-Open No. 2021-531476
[0004] The present disclosure provides a particle measurement method, a particle measurement device, and a processing system capable of enhancing the detection sensitivity of defects and / or particles on the surface of a substrate.
[0005] One aspect of the present disclosure provides a particle measurement method. The particle measurement method includes steps (A), (B), and (C). (A) provides a substrate with a hydrophilic surface inside a first chamber capable of supplying an organic vapor. (B) exposes the substrate to the organic vapor and attaches the organic matter with defects and / or particles on the surface of the substrate as nuclei to expand the nuclei. (C) measures the expanded nuclei on the surface of the substrate.
[0006] According to the present disclosure, the detection sensitivity of defects and / or particles on the surface of the substrate can be enhanced.
[0007] Figure 1 is a cross-sectional view showing an example of the configuration of a particle measuring device according to one embodiment. Figure 2 is a flowchart showing an example of a particle measuring method according to the first embodiment. Figure 3A is a diagram showing an example of the operation of the processing system according to the first embodiment. Figure 3B is a diagram showing an example of the operation of the processing system according to the first embodiment. Figure 3C is a diagram showing an example of the operation of the processing system according to the first embodiment. Figure 4A is a diagram showing an example of the operation of the processing system according to the first embodiment. Figure 4B is a diagram showing an example of the operation of the processing system according to the first embodiment. Figure 4C is a diagram showing an example of the operation of the processing system according to the first embodiment. Figure 4D is a diagram showing an example of the operation of the processing system according to the first embodiment. Figure 4E is a diagram showing an example of the operation of the processing system according to the first embodiment. Figure 5 is a flowchart showing an example of a particle measuring method according to the second embodiment. Figure 6 is a flowchart showing an example of a particle measuring method according to the third embodiment. Figure 7A is a diagram showing an example of the operation of the processing system according to the third embodiment. Figure 7B is a diagram showing an example of the operation of the processing system according to the third embodiment. Figure 7C is a diagram showing an example of the operation of the processing system according to the third embodiment. Figure 7D is a diagram showing an example of the operation of the processing system according to the third embodiment. Figure 8A is a diagram showing an example of the operation of the processing system according to the third embodiment. Figure 8B is a diagram showing an example of the operation of the processing system according to the third embodiment. Figure 8C is a diagram showing an example of the operation of the processing system according to the third embodiment. Figure 9 is a flowchart showing an example of the particle measurement method according to the fourth embodiment. Figure 10A is a diagram showing an example of the operation of the processing system according to the fourth embodiment. Figure 10B is a diagram showing an example of the operation of the processing system according to the fourth embodiment. Figure 10C is a diagram showing an example of the operation of the processing system according to the fourth embodiment. Figure 10D is a diagram showing an example of the operation of the processing system according to the fourth embodiment. Figure 10E is a diagram showing an example of the operation of the processing system according to the fourth embodiment. Figure 10F is a diagram showing an example of the operation of the processing system according to the fourth embodiment. Figure 10G is a diagram showing an example of the operation of the processing system according to the fourth embodiment. Figure 10H is a diagram showing an example of the operation of the processing system according to the fourth embodiment. Figure 11 is a diagram showing an example of experimental results when the particle measurement method according to the first embodiment is performed. Figure 12 is an enlarged view of the area within the dotted line frame shown in Figure 11.
[0008] Embodiments of the particle measurement method, particle measurement apparatus, and processing system of this disclosure will be described in detail below with reference to the drawings. Note that these embodiments do not limit the particle measurement method, particle measurement apparatus, and processing system of this disclosure, and the following embodiments can be appropriately combined within the scope that does not contradict the various configurations and processing contents of this disclosure. Furthermore, the figures referenced below are schematic for the sake of explanation. Therefore, details may be omitted, and the dimensional ratios do not necessarily correspond to those of reality. This disclosure may also include methods, apparatuses, and processing systems for measuring defects that can be measured as particles, such as COP (crystal-originated particle), scratches, polishing-induced defects, and cross-hatching of epitaxial layers.
[0009] Conventionally, high-temperature aggregated particle count analyzers have been proposed that have an aggregater that forms aggregated particles of volatile substances using particles in the gas phase as nuclei. However, these high-temperature aggregated particle count analyzers amplify particles in the gas phase within a space such as a chamber, and cannot improve the detection sensitivity of particles on the substrate surface.
[0010] The particle measurement methods according to each embodiment of this disclosure include a method for measuring particles grown using particles on a substrate surface as nuclei, and a particle measurement apparatus and processing system for performing the particle measurement method. The particle measurement methods according to each embodiment of this disclosure are examples of methods for measuring particles grown using defects and / or particles on a substrate surface as nuclei, and the resulting enlarged particles.
[0011] The particle measurement method according to each embodiment enables measurement of minute particles of several tens of nanometers or less attached to the surface of a substrate by magnification. Figure 1 is a cross-sectional view showing an example of the configuration of a particle measurement apparatus 1 according to one embodiment. The particle measurement method can be carried out by the apparatus shown in Figure 1, but the apparatus for carrying out the particle measurement method is not limited to the configuration illustrated in Figure 1.
[0012] The particle measuring apparatus 1 shown in Figure 1 comprises a chamber 2, a stage 3, a temperature control unit 4, an organic matter supply unit 6, an inert gas supply unit 7, an exhaust device 8, and a control unit 9. The chamber 2 has a top wall, a bottom, and a side wall connecting the top wall and the bottom. The side wall has an observation window 2a that allows observation of the inside of the chamber 2. The inside of the chamber 2 is sealed by closing the opening of the side wall with the observation window 2a. An inspection device (not shown) irradiates the substrate W inside the chamber 2 with a laser or the like from the observation window 2a and detects particles attached to the surface of the substrate W using the reflected light of the laser or the like. The side wall is provided with an inlet / outlet (not shown) for loading and unloading the substrate W between the chamber 2 and a transport chamber (not shown) adjacent to it.
[0013] The organic matter supply unit 6 supplies organic matter vapor into the chamber 2 from the top wall. The organic matter supply unit 6 may supply organic matter vapor that has been preheated and vaporized. Alternatively, the organic matter supply unit 6 may supply the organic matter in a liquid state and heat it to vaporize it before supplying it into the chamber 2. The organic matter vapor diffuses within the chamber 2 and is adsorbed onto particles on the surface of the substrate W.
[0014] The organic material supplied from the organic material supply unit 6 may be, for example, an organic material with a melting point higher than the substrate temperature, such as a linear hydrocarbon or a saturated fluorinated hydrocarbon. When the substrate is set to around room temperature (20°C), it may be n-heptadecane with a melting point of 22°C, or a linear hydrocarbon or saturated fluorinated hydrocarbon with a higher melting point. For example, the supplied organic material may be triacontane or polytetrafluoroethylene.
[0015] Stage 3 is a platform on which the substrate W is placed within the chamber 2. Stage 3 may have a temperature control unit 4. For example, the temperature control unit 4 may include a heater, a flow path for a heat transfer medium, or a combination thereof. In the case of a heater, the heater may be electrically connected to a power supply 5, and the temperature of Stage 3 may be adjusted by the power from the power supply 5. For example, the temperature of Stage 3 may be room temperature, lower than room temperature, or higher. A heat transfer fluid such as brine or gas flows through the flow path. The temperature control unit 4 controls the temperature of the substrate W to a temperature lower than the melting point of the organic matter. As a result, the organic matter adsorbed on the particles on the surface of the substrate W changes state from gas to solid. For example, if the organic matter is triacontane, the organic matter supply unit 6 supplies triacontane in a gaseous state into the chamber 2 by heating the triacontane to about 63°C or higher. As a result, triacontane adsorbs around the particles, using the particles as nuclei. The temperature of the substrate W is kept lower than the melting point of the organic matter. For example, if the organic substance is triacontane, triacontane is a solid at room temperature (25°C). Therefore, on a substrate W at room temperature, the triacontane adsorbed on the particles crystallizes and becomes a solid. This makes it possible to measure the magnified particles.
[0016] Temperature control units (not shown) may also be provided on the top and side walls of the chamber 2. If organic matter is adsorbed onto the walls of the chamber 2 other than the substrate W, the amount of organic matter that can be adsorbed onto the particles on the substrate W decreases. Therefore, the temperature of the walls of the chamber 2 is raised higher than room temperature to prevent organic matter inside the chamber 2 from adhering to the walls. In addition, organic matter that has been adsorbed onto the walls of the chamber 2 is made more detachable from the walls. In this way, the adsorption efficiency of organic matter onto particles on the surface of the substrate W is increased. For example, the temperature of the top and side walls of the chamber 2 may be a maximum of 120°C. The temperature of the stage 3 may be a maximum of 250°C.
[0017] The inert gas supply unit 7 supplies N gas from the top wall into the chamber 2. ２An inert gas, such as a gas, is supplied. The inert gas can be used as a heat transfer medium to raise the temperature inside chamber 2 to the target temperature when the chamber 2 is under reduced pressure. The flow rate of the supplied inert gas is controlled so as not to hinder the adsorption of organic matter onto particles. However, the particle measuring device 1 does not necessarily have to have an inert gas supply unit 7.
[0018] The exhaust system 8 may be connected to a gas outlet located, for example, at the bottom of the chamber 2. The exhaust system 8 may include a pressure regulating valve and a vacuum pump. The pressure regulating valve regulates the pressure inside the chamber 2. The vacuum pump may include a turbomolecular pump, a dry pump, or a combination thereof.
[0019] The pressure inside chamber 2 is controlled to a vacuum (reduced pressure) state by the exhaust device 8. The probability of organic matter adsorption to particles attached to the surface of the substrate W is affected by the amount of nitrogen and oxygen in chamber 2 at normal pressure (atmospheric pressure: 1 atm). In a vacuum (reduced pressure) environment, the amount of nitrogen and oxygen is small, allowing the organic matter vapor to reach the substrate W efficiently, thus increasing the particle expansion efficiency. Therefore, the pressure inside chamber 2 may be controlled to a vacuum (reduced pressure) state of, for example, 0.01 Pa. However, the pressure inside chamber 2 is not limited to this and may be normal pressure.
[0020] The control unit 9 processes computer-executable instructions causing the particle measuring device 1 to perform the various processes described herein. The control unit 9 may be configured to control each element of the particle measuring device 1 to perform the various processes described herein. In one embodiment, part or all of the control unit 9 may be included in the particle measuring device 1. The control unit 9 is implemented, for example, by a computer. The control unit 9 may include a processing unit, a storage unit, and a communication interface. The functions implemented by the processing unit described herein may be implemented in a circuit or processing circuitry, including a general-purpose processor, an application-specific processor, integrated circuits, ASICs (Application Specific Integrated Circuits), a CPU (Central Processing Unit), conventional circuitry, and / or a combination thereof, programmed to implement the functions described herein. A processor is considered a circuit or processing circuit, including transistors and other circuitry. A processor may be a programmed processor that executes a program stored in a storage unit. This program may be stored in the storage unit beforehand and may be retrieved via a medium when needed. The acquired program is stored in the memory unit and read from the memory unit and executed by the processing unit. The storage medium may be various storage media readable by a computer, or it may be a communication line connected to the communication interface. The memory unit may include RAM (Random Access Memory), ROM (Read Only Memory), HDD (Hard Disk Drive), SSD (Solid State Drive), or a combination thereof. The communication interface may communicate with the particle measuring device 1 via a communication line such as a LAN (Local Area Network).In this disclosure, circuits, units, and means are hardware programmed to perform or configured to perform the functions described. Such hardware may be any hardware described in this disclosure, or any hardware known to be programmed to perform or execute the functions described. If such hardware is a processor that is considered to be a type of circuit, such circuit, means, or unit is a combination of hardware and software used to constitute such hardware and / or processor.
[0021] <Particle Measurement Method / Processing System> Next, the particle measurement method and processing system will be described with reference to Figures 2, 3A to 3C, and 4A to 4E. Figure 2 is a flowchart showing an example of the particle measurement method according to the first embodiment. Figures 3A to 3C and 4A to 4E are diagrams showing examples of the operation of the processing system according to the first embodiment. The processing system is an example of a system that implements the particle measurement method according to each embodiment, and the configuration of the processing system that implements the particle measurement method is not limited to this. An example of the configuration of the processing system 10 will be described with reference to Figure 3A, and then the particle measurement method according to the first embodiment will be described.
[0022] <Processing System> The processing system 10 includes a load port 33, a loader module 31, a load lock module 35, a vacuum transport module 41, and processing modules 51 to 56. The vacuum transport module 41 is an example of a transport chamber adjacent to the processing modules 51 to 56. A normal pressure transport module may be provided instead of the vacuum transport module 41. The processing system 10 is controlled by a higher-level control unit 20. The higher-level control unit 20 can communicate with the control unit 9. The configuration of the higher-level control unit 20 is the same as that of the control unit 9, and therefore its description is omitted here. Either the higher-level control unit 20 or the control unit 9 may be included in the other. Part or all of the higher-level control unit 20 may be included in the processing system 10.
[0023] The loader module 31, load lock module 35, and vacuum transport module 41 are arranged in a straight line in the front-to-back direction in this order. In the following description, the side where the loader module 31 is located will be referred to as the front side, and the side where the vacuum transport module 41 is located will be referred to as the rear side.
[0024] The loader module 31 comprises a housing that maintains atmospheric pressure internally, a substrate W transport device 32 provided inside the housing, and load ports 33. In this example, there are three load ports 33, arranged side by side on the front side of the housing. A transport container for storing the substrate W, called a FOUP (Front Opening Unified Pod), is placed on each load port 33. The transport device 32 is composed of, for example, a multi-jointed arm that can move left and right. The transport device 32 can transport the substrate W between the transport container on each load port 33 and each load lock module 35.
[0025] In this example, there are two load lock modules 35, arranged side by side when viewed from the front. Each load lock module 35 has a housing, which is connected to the loader module 31 and the vacuum transport module 41 via gate valves G located on its front and rear sides, respectively. The upper control unit 20 controls the pressure inside the housing to change between atmospheric pressure and vacuum pressure when the gate valves G on the front and rear sides of the housing are closed. The load lock modules 35 are configured to be able to transfer substrates W to the transport device 32 and the transport device 44, which will be described later.
[0026] The vacuum transport module 41 has a transport device 44 and maintains a vacuum atmosphere inside. Processing modules 51-53 and 54-56, which are arranged front to back, are connected to the left and right sides of the vacuum transport module 41 via gate valves G. The transfer of substrates W between processing modules 51-53 and 54-56 and the load lock module 35 is performed by the transport device 44, which is composed of, for example, a multi-jointed arm that can move back and forth.
[0027] Processing modules 51 to 56 perform processing on the substrate W. The processing of the substrate W may include processes such as film deposition and etching. The processing of the substrate W may include processes for amplifying particles and measuring particles, which will be described later.
[0028] The higher-level control unit 20 controls the operation of each part of the processing system 10. For example, the higher-level control unit 20 controls the transport of the substrate W from the transport container on the load port 33 to the vacuum transport module 41 via the loader module 31 and the load lock module 35. Then, the higher-level control unit 20 controls the transport of the substrate W to at least one of the processing modules 51 to 56 via the vacuum transport module 41 and to perform a desired process on the substrate W. After that, the higher-level control unit 20 controls the transport of the substrate W to the vacuum transport module 41 and then to return it to the transport container on the load port 33 via the load lock module 35 and the loader module 31.
[0029] The processing system 110 shown in Figures 4A to 4E has a processing module 157 in addition to the configuration of the processing system 10. Specifically, the processing system 110 has a load port 133, a loader module 131, a load lock module 135, a vacuum transport module 141, and processing modules 151 to 157. The loader module 131 has a transport device 132. The vacuum transport module 141 has a transport device 144. The processing module 157 is connected to the vacuum transport module 141 via a gate valve G, similar to the processing modules 151 to 156. Particle measurement processing is performed in the processing module 157. The higher-level control unit 120 controls the operation of each part of the processing system 110. The higher-level control unit 120 may be the same as the higher-level control unit 20, or one of the higher-level control units 20 or 120 may be included in the other. Part or all of the higher-level control unit 120 may be included in the processing system 110. Since the configurations other than the processing module 157 have already been described in the corresponding configurations of the processing system 10, the explanation will be omitted here.
[0030] Note that processing modules 51-56 and processing modules 151-157 are examples of multiple processing modules including the particle measuring device 1. Load ports 33 and 133 are examples of ports through which substrates W transported to multiple processing modules can pass. Vacuum transport module 41 is an example of a transport chamber that transports substrates W between multiple processing modules. The upper control units 20 and 120 are distinguished from the control unit 9, but the upper control units 20 and 120 may be integrated with the control unit 9. The upper control units 20 and 120 are examples of control units that control the processing systems 10 and 110. The control unit 9 is an example of a control unit that controls the particle measuring device 1.
[0031] <First Embodiment: Particle Measurement Method> A particle measurement method according to the first embodiment will be described. (Step S1: Substrate Processing) In step S1 of Figure 2, a desired process such as film deposition or etching is performed on the substrate W. At this time, as shown in Figure 3A, the substrate W is handed over to the transport devices 32 and 44 and transported from the transport container on the load port 33 to the vacuum transport module 41 via the loader module 31 and the load lock module 35. The substrate W is then transported via the vacuum transport module 41 to at least one of the processing modules 51 to 56, where the desired process is performed on the substrate W. Figure 3A shows the operation of transporting the substrate W from the transport container on the load port 33 to the processing module 51. Figure 3B shows the state in which processing of the substrate W is being performed, and Figure 3C shows the state in which processing of the substrate W has been completed. In addition, in order to check the status of the equipment and isolate the cause of particle generation, processing of the substrate W in the processing module may not be performed, and only transport along an arbitrary transport path may be performed.
[0032] (Step S2: Prepare a substrate with a hydrophilic surface) Next, in step S2 of Figure 2, if monitoring of particles on the surface of the substrate W is to be performed, a substrate W with a hydrophilic surface is prepared. The substrate W may be processed in at least one of the processing modules 51 to 56. For example, the surface of the substrate W may be made hydrophilic by oxygen radicals through oxygen plasma treatment, but the method of making the surface of the substrate W hydrophilic is not limited to this. Whether the surface of the substrate W immediately after processing in step S1 is hydrophilic or hydrophobic depends on the material of the substrate W and the content of the preceding processing. Therefore, if the surface of the substrate W immediately after processing in step S1 is hydrophilic, step S2 may be omitted.
[0033] In a substrate W with a hydrophilic surface, for example, the water contact angle on the surface of the substrate W may be 30 degrees or less. Alternatively, for example, the water contact angle on the surface of the substrate W may be 10 degrees or less. The smaller the water contact angle, the less likely hydrophobic organic vapors are to be adsorbed onto the surface of the substrate W. As a result, the substrate W has a hydrophilic surface that makes it difficult for hydrophobic organic matter to grow in areas other than the particles on the surface of the substrate W, thereby allowing organic matter to be adsorbed and grown on the particles on the surface of the substrate W. In other words, if the surface of the substrate W is not hydrophilic, organic matter may adhere to the entire surface of the substrate W, hindering the expansion of particles, so the surface of the substrate W is made hydrophilic.
[0034] (Step S3: Loading the substrate) Next, in step S3 of Figure 2, the substrate W is loaded into the chamber where particle measurement is performed. In the example shown in Figure 4A, since particle measurement on the substrate W is performed in the processing module 157, the substrate W is transported from the processing module 51 of the processing system 10 to the processing module 157 of the processing system 110.
[0035] The processing module 157 can be implemented, for example, by the particle measuring device 1 shown in Figure 1, but is not limited thereto. The chamber of the processing module 157 may be the chamber 2 of the particle measuring device 1, and is an example of a first chamber capable of supplying organic vapor. Step S3 is an example of the process of (A). The following describes the case in which particle magnification processing and particle measurement processing on the substrate W are performed using the particle measuring device 1 shown in Figure 1.
[0036] (Step S4: Exposure to organic vapor) Next, in step S4 of Figure 2, the processing module 157 exposes the substrate W to organic vapor in the chamber 2. As a result, particles on the surface of the substrate W become nuclei, and organic matter adheres to the particles, causing them to expand. Step S4 is an example of process (B). The organic matter supply unit 6 supplies organic vapor into the chamber 2, exposing the substrate W to the organic vapor. As a result, as shown in Figure 4B, the substrate W is exposed to organic vapor in the chamber 2 of the processing module 157. The organic vapor is adsorbed onto particles on the surface of the substrate W, and after adsorption, crystallization (solidification) occurs because the substrate W is at a temperature lower than the melting point of the organic matter. As a result, the particles on the surface of the substrate W expand.
[0037] Exposing the substrate W to organic vapor may include adjusting the pressure in the chamber 2 or the temperature at which the organic vapor is supplied so that it can be supplied to the substrate; maintaining a temperature at which the organic vapor can adhere to and grow on particles on the substrate W, and where adhesion of the organic vapor is suppressed to areas other than the substrate surface surrounding the particles; exposing the surface of the substrate W to the organic vapor and supplying the organic vapor for the organic vapor to adhere to and grow on the particles; stopping the supply of the organic vapor after the organic vapor has adhered to and grown on the particles; and suppressing the outflow of the organic vapor from the chamber at least before the substrate W is removed.
[0038] The specific conditions (1) to (6) for exposing the substrate W to organic vapor are shown below. (1) The organic material supply unit 6 adjusts the temperature of the supplied organic material to the temperature at which the organic vapor is supplied to the substrate W. For example, if the organic material is triacontane, the organic material supply unit 6 heats the triacontane to 63°C or higher, the temperature at which triacontane vaporizes, and supplies it into the chamber 2.
[0039] (2) The temperature control unit 4 adjusts the temperature of the substrate W or the stage 3 to a temperature lower than the melting point of the organic material. The temperature control unit 4 should adjust the temperature of the substrate W or the stage 3 to a temperature at which the organic material becomes solid. For example, if the melting point of the organic material is lower than room temperature, the temperature control unit 4 sets the temperature of the substrate W or the stage 3 to room temperature. This causes the organic material adsorbed on the particles to change state to solid. This prevents the organic material from melting and making it impossible to measure the particles when measuring the magnified particles at room temperature and atmospheric pressure.
[0040] (3) The exhaust device 8 reduces the pressure inside the chamber 2 to a vacuum pressure of about 0.01 Pa. By making the pressure inside the chamber 2 a vacuum, the adsorption efficiency of organic matter to particles can be increased. However, the pressure inside the chamber 2 may be normal.
[0041] (4) A temperature control unit (not shown) provided on the wall of the chamber 2 adjusts the temperature of the top and side walls of the chamber 2 to a temperature at which organic vapor is less likely to be adsorbed. This reduces the amount of organic matter adsorbed on the top and side walls of the chamber 2 and increases the adsorption efficiency of organic matter to particles on the surface of the substrate W.
[0042] (5) The organic matter supply unit 6 exposes the substrate W to organic matter vapor to enlarge particles on the substrate W, and then stops supplying organic matter to prevent the organic matter from flowing out of the chamber 2. In this way, the organic matter supply unit 6 can prevent the diffusion of organic matter into the external environment of the chamber 2.
[0043] (6) The organic material supply unit 6 may expose the substrate W to the vapor of the organic material for a time of, for example, about 1 second. By making the time for which the substrate W is exposed to the vapor of the organic material instantaneous, the time required for the entire process can be shortened.
[0044] (Step S5: Measuring particles) Next, in step S5 of FIG. 2, the processing module 157 (particle measuring device 1) measures the particles on the surface of the substrate W. Step S5 is an example of the process in (C). For example, for the measurement of particles, a laser may be irradiated into the chamber 2 from the observation window portion 2a of the particle measuring device 1 using an inspection device, and the number of particles on the surface of the substrate W may be measured by the reflected light. Also, the number of particles on the surface of the substrate W may be measured using an optical method such as a microscope as the inspection device. Note that the method for measuring particles by the inspection device is not limited to this.
[0045] In the present embodiment, as shown in FIG. 4B, after the processing in step S4 is executed on the substrate W by the processing module 157, as shown in FIG. 4C, the measurement processing in step S5 is performed by the same processing module 157. Therefore, the measurement of particles can be performed smoothly. However, the processing in step S5 (particle measurement) may be executed by a processing module different from the processing module 157 that executed step S4 (particle enlargement). For example, the processing in step S5 may be executed by any one of the processing modules 151 to 156. Also, for example, the processing in step S5 may be executed by a processing module outside the processing system 110, such as the processing modules 51 to 56 of the processing system 10. The processing in step S5 may be performed in an air atmosphere or in a vacuum atmosphere.
[0046] (Step S6: Unloading the substrate) Next, in step S6, the transfer device 144 unloads the substrate W from the processing module 157. As shown in FIG. 4D, the transfer device 144 transfers the substrate W from the processing module 157 to the load lock module 135 via the vacuum transfer module 141. Then, as shown in FIG. 4E, the transfer device 132 returns the substrate W to the transfer container on the load port 133 via the load lock module 135 and the loader module 131.
[0047] <Operation and effect of the first embodiment> According to this, even if the particles adhering to the surface of the substrate W are smaller than the detection lower limit value set in the inspection device and cannot be measured as they are, organic substances can be adsorbed on the particles to expand them to a size greater than the detection lower limit value. Thereby, particles can be measured using the above-described inspection device. Thereby, the detection sensitivity of the particles on the surface of the substrate W can be enhanced. An inspection device for detecting particles having a nano-level size is more expensive as the detection lower limit value is lower. In the particle measurement method of the present embodiment, particles having a nano-level size can be detected with high accuracy using an existing inspection device without purchasing a new inspection device with high precision.
[0048] <Second embodiment: Particle measurement method> Next, the particle measurement method according to the second embodiment will be described with reference to FIG. 5. FIG. 5 is a flowchart showing an example of the particle measurement method according to the second embodiment. Steps S1 to S6 in FIG. 5 are the same as steps S1 to S6 of the particle measurement method according to the first embodiment shown in FIG. 2. The particle measurement method according to the second embodiment is different from the particle measurement method according to the first embodiment in that the process of step S4-1 is added after step S4 and before step S5. Therefore, only the process of step S4-1 different from the particle measurement method according to the first embodiment will be described.
[0049] In the particle measurement method according to the second embodiment, in step S4, organic matter is attached and particles on the surface of the substrate W are expanded, and then in step S4-1, the particles are further expanded by Ostwald aging. Step S4-1 is an example of the process of (D).
[0050] In Ostwald aging, after the particles on the surface of the substrate W are magnified, the substrate W is left in the chamber of the processing module 157 or at room temperature and atmospheric pressure. This further magnifies the particles on the surface of the substrate W.
[0051] According to this, even if particles on the substrate W surface are magnified in step S4 but cannot be measured by the inspection device, in step S4-1, the particles are further magnified, making it possible to measure the particles on the substrate W surface using the same inspection device. This further increases the detection sensitivity of particles on the substrate W surface.
[0052] In step S4-1, during Ostwald aging, the substrate W may be heated (reheated) by the temperature control unit 4 to enlarge the particles. For example, in step S4-1, the Ostwald aging time may be about 60 seconds. During this time, the substrate W may be heated to about 60°C. By heating the substrate W, the particles can be enlarged in a shorter time.
[0053] After measuring the particles in step S5, the process in step S4-1 may be re-executed according to the particle measurement results. After re-executing the process in step S4-1, the particle measurement process in step S5 may be re-executed. In other words, the process in step S4-1 may be executed at least either before or after the process in step S5.
[0054] <Effects and Effects of the Second Embodiment> According to this embodiment, the size of the particles can be further enlarged by Ostwald aging. As a result, particles that could not be measured by the inspection device with only the process in step S4 can be measured using the particle measuring device 1 by further enlarging the particles in step S4-1. This makes it possible to further increase the detection sensitivity of particles on the surface of the substrate W.
[0055] <Third Embodiment: Particle Measurement Method> Next, the particle measurement method according to the third embodiment will be described with reference to Figures 6, 7A to 7D, and 8A to 8C. Figure 6 is a flowchart showing an example of the particle measurement method according to the third embodiment. Figures 7A to 7D are diagrams showing examples of the operation of the processing system according to the third embodiment. Figures 8A to 8C are diagrams showing examples of the operation of the processing system according to the third embodiment. In the particle measurement method according to the third embodiment, substrate processing, particle magnification, and particle measurement are performed by the processing system 10.
[0056] (Step S11: Loading the substrate) In step S11 of Figure 6, the transport devices 32 and 44 load the substrate W into one of the processing modules 51 to 56 where a desired process such as film deposition is performed. At this time, as shown in Figure 7A, the substrate W is handed over to the transport devices 32 and 44 and transported from the transport container on the load port 33 to the vacuum transport module 41 via the loader module 31 and the load lock module 35. Figure 7A shows the operation of transporting the substrate W from the transport container on the load port 33 to the processing module 51. The chamber of the processing module 51 is an example of the first chamber.
[0057] (Step S12: Substrate Processing) Next, in step S12, the processing module 51 performs a desired process on the substrate W, such as film deposition or etching. At this time, as shown in Figure 7B, the processing module 51 performs the desired process on the substrate W, and the processing of the substrate W is completed as shown in Figure 7C.
[0058] (Step S13: Prepare a substrate with a hydrophilic surface) Next, in step S13, a substrate W is prepared in which the substrate treatment is completed and the surface is hydrophilic. Step S13 is an example of the process in (A). For example, the surface of the substrate W may be made hydrophilic by oxygen radicals by oxygen plasma treatment or the like, but the method of making the surface of the substrate W hydrophilic is not limited to this.
[0059] (Step S14: Exposure to organic vapor) Next, in step S14, the processing module 51 exposes the substrate W to organic vapor in the chamber 2. As a result, organic matter adheres to particles on the surface of the substrate W, causing the particles to expand. Step S14 is an example of process (B). At this time, as shown in Figure 7D, organic vapor is supplied into the chamber of the processing module 51 in which the substrate W is being processed. As a result, organic matter adheres to particles on the surface of the substrate W, causing the particles to expand.
[0060] (Step S15: Particle measurement) Next, in step S15, the inspection device measures the particles magnified on the surface of the substrate W using the particle measuring device 1. Step S15 is an example of process (C). In this embodiment, as shown in Figures 7A to 7D and Figure 8A, the processes of step S12 (substrate processing), step S14 (particle magnification), and step S15 (particle measurement) are performed in the same processing module 51. Therefore, the processes from substrate processing to particle magnification and particle measurement can be executed smoothly.
[0061] (Step S16: Unloading the substrate) Next, in step S16, the transport device 44 unloads the substrate W, which has been measured for particles, from the processing module 51. As shown in Figure 8B, the transport device 44 transports the substrate W from the processing module 51 to the vacuum transport module 41. Then, as shown in Figure 8C, the transport device 32 returns the substrate W to the transport container on the load port 33 via the load lock module 35 and the loader module 31.
[0062] <Effects and Effects of the Third Embodiment> According to this embodiment, even if particles adhering to the surface of the substrate W are smaller in size than the detection limit set in the inspection device and cannot be measured as they are, by adsorbing organic matter onto the particles and amplifying them, they can be measured using the same inspection device. This makes it possible to increase the detection sensitivity of particles on the surface of the substrate W. Furthermore, in the particle measurement method according to the third embodiment, all processing can be performed within the processing system 10. Therefore, the transport time of the substrate W can be shortened.
[0063] <Fourth Embodiment: Particle Measurement Method> Next, the particle measurement method according to the fourth embodiment will be described with reference to Figures 9 and 10A to 10H. Figure 9 is a flowchart showing an example of the particle measurement method according to the fourth embodiment. Figures 10A to 10H are diagrams showing examples of the operation of the processing system according to the fourth embodiment. In the particle measurement method according to the fourth embodiment, an organic matter removal process is performed after particle measurement. Substrate processing, particle magnification, particle measurement, and organic matter removal are performed by the processing system 10.
[0064] (Step S21: Loading the substrate) In step S21 of Figure 9, the transport devices 32 and 44 load the substrate W into one of the processing modules 51 to 56 where a desired process such as film deposition is performed. At this time, as shown in Figure 10A, the substrate W is handed over to the transport devices 32 and 44 and transported from the transport container on the load port 33 to the vacuum transport module 41 via the loader module 31 and the load lock module 35. Figure 10A shows the operation of transporting the substrate W from the transport container on the load port 33 to the processing module 51. The chamber of the processing module 51 is an example of the first chamber.
[0065] (Step S22: Substrate Processing) Next, in step S22, the processing module 51 performs a desired process on the substrate W, such as film deposition or etching. At this time, as shown in Figure 10B, the processing module 51 performs the processing on the substrate W, and the processing of the substrate W is completed as shown in Figure 10C.
[0066] (Step S23: Prepare a substrate with a hydrophilic surface) Next, in step S23, the substrate processing is completed and a substrate W with a hydrophilic surface is prepared. Step S23 is an example of the process in (A). For example, the surface of the substrate W may be made hydrophilic by oxygen radicals by oxygen plasma treatment or the like, but the method of making the surface of the substrate W hydrophilic is not limited to this.
[0067] (Step S24: Exposure to organic vapor) Next, in step S24, the processing module 51 exposes the substrate W to organic vapor in the chamber 2. As a result, organic matter adheres to particles on the surface of the substrate W, causing the particles to expand. Step S24 is an example of process (B). At this time, as shown in Figure 10D, organic vapor is supplied into the chamber of the processing module 51 in which the substrate W is being processed. As a result, organic matter adheres to particles on the surface of the substrate W, causing the particles to expand.
[0068] (Step S25: Particle measurement) Next, in step S25, the inspection device measures the particles magnified on the surface of the substrate W using the particle measuring device 1. Step S25 is an example of the process of (C). In this embodiment, as shown in Figures 10A to 10E, the processes of step S22 (substrate processing), step S24 (particle magnification), and step S25 (particle measurement) are performed in the same processing module 51. Therefore, the processes from substrate processing to particle magnification and particle measurement can be executed smoothly.
[0069] (Step S26: Discharging the substrate) Next, in step S26, the transport device 44 discharges the substrate W, which has had particles measured, from the chamber of the processing module 51.
[0070] (Step S27: Loading the substrate) Next, in step S27, the transport device 44 loads the substrate W, which has been unloaded from the processing module 51, into one of the processing modules 52 to 56 other than processing module 51. In the example shown in Figure 10F, the transport device 44 loads the substrate W into processing module 54. The chamber of processing module 54 is an example of a second chamber that is different from the chamber in which the particles were measured.
[0071] (Step S28: Removal of organic matter) Next, in step S28, the processing module 54 vaporizes and removes organic matter attached to particles on the surface of the substrate W. Step S28 is an example of the process in (E). For example, the process in step S28 is carried out in a chamber different from the chamber in which the particles are measured. In the examples in Figures 10F and G, organic matter attached to particles on the surface of the substrate W is vaporized and removed from the substrate W in a chamber of processing module 54, which is different from the chamber of processing module 51 in which the particles were measured.
[0072] Removing organic matter attached to particles on the surface of the substrate W by vaporization may include: transporting the substrate W, which has been removed from the chamber where particle measurement was performed, into a chamber for organic matter removal; adjusting at least one of the following: a temperature, pressure, or flow rate of purge gas that can vaporize and remove the organic matter attached to particles on the substrate W; vaporizing and removing the organic matter attached to particles on the substrate W; and transporting the substrate W from which the organic matter has been removed out of the chamber.
[0073] If the substrate W is a product wafer, the substrate W can be reused by removing organic matter from it. Furthermore, it is possible to prevent organic matter within the processing module from diffusing into the external environment. If the substrate W is a monitor wafer, step S28 may be omitted. After removing organic matter from the substrate W, as shown in Figure 10H, the processing module 54 completes the process of removing organic matter from the substrate W.
[0074] (Step S29: Discharging the substrate) Next, in step S29, the transport device 44 discharges the substrate W from which organic matter has been removed from the processing module 54. As shown in Figure 10H, the transport device 44 transports the substrate W from the processing module 54 to the vacuum transport module 41. Then, as shown in Figure 10H, the transport device 32 returns the substrate W to the transport container on the load port 33 via the load lock module 35 and the loader module 31.
[0075] <Fourth Embodiment's Operation and Effects> According to this embodiment, even if particles adhering to the surface of the substrate W cannot be measured by the inspection device as they are, by adsorbing organic matter onto the particles and amplifying them, they can be measured using the particle measuring device. This increases the detection sensitivity of particles on the surface of the substrate W. Furthermore, after particle measurement, the substrate W can be reused by vaporizing and removing the organic matter adhering to the particles on the substrate W. In addition, it is possible to prevent organic matter in the processing module from diffusing into the external environment.
[0076] In the fourth embodiment, the chamber for supplying organic matter in step S24 and measuring particles in step S25 is separated from the chamber for removing organic matter in step S28. By separating chambers with opposing purposes, such as supplying and removing organic matter, the preparation time for each process can be shortened. However, the processes in steps S24 and S25 and the process in step S28 may be performed in the same chamber.
[0077] Furthermore, although the example shown in steps S26 to S27 illustrates the transport of the substrate W in a vacuum (reduced pressure) environment, the process is not limited to this, and the substrate W may be transported in an atmospheric environment. Since organic matter does not react with air, if the particle measuring device 1 is located outside the processing system 10, the substrate W can be transported in an atmospheric environment during steps S26 to S27.
[0078] <Experimental Results> Figure 11 shows an example of experimental results when the particle measurement method according to the first embodiment is performed. Figure 12 is an enlarged view of the area within the dotted line frame A shown in Figure 11. The experiment was performed on a substrate W after it had been placed on the particle measurement device 1 using an inspection device with a detection limit of 60 nm, exposed to organic vapor, and the particles on the substrate W had been magnified.
[0079] Conventional inspection equipment could not detect minute particles below the detection limit when they were attached to the surface of the substrate W. When particle particles with diameters of 10 nm, 15 nm, and 40 nm were partially attached to the substrate W and measured, the inspection equipment could not detect the particle particles because the detection limit was 60 nm.
[0080] In contrast, according to the particle measurement method of the first embodiment, the substrate W was exposed to a chamber filled with organic vapor, and then particles on the surface of the substrate W were measured. When the measurement area was observed with an SEM, the minute particles shown numerically in Figure 11 were enlarged into particles with a diameter of 60 nm or more. As shown in Figure 12, the enlarged particles had a nucleus in the center, around which organic matter C was radially crystallized. Therefore, even if the size of the particles was smaller than the detection limit set in the inspection device and could not be measured as is, it was possible to enlarge them to a size above the detection limit by adsorbing organic matter around them using the particles as nuclei. As a result, it was possible to measure the particles using the above inspection device.
[0081] <Other> In the embodiments described above, the process (B) exemplified in steps S4, S14, and S24 was performed in the same chamber as the process (C) exemplified in steps S5, S15, and S25, but it may be performed in different chambers. In this case, the substrate W discharged from the first chamber in which the process (B) is performed is transported to a chamber different from the first chamber, and then the process (C) is performed. The case where a measuring instrument is used that performs only measurements with a different transport system is also included in the case of performing the process in different chambers.
[0082] It should be noted that the embodiments disclosed herein are illustrative and not restrictive in all respects. Indeed, the embodiments described above can be embodied in a variety of forms. Furthermore, the embodiments described above may be omitted, replaced, or modified in various ways without departing from the scope and spirit of the attached claims.
[0083] Furthermore, the following additional information is disclosed with respect to the above embodiments. <Additional Information> (1) A particle measurement method comprising: (A) providing a substrate having a hydrophilic surface inside a first chamber capable of supplying organic vapor; (B) exposing the substrate to the organic vapor, causing the organic to adhere to defects and / or particles on the surface of the substrate as nuclei and expanding the nuclei; and (C) measuring the expanded nuclei on the surface of the substrate. (2) The particle measurement method according to (1), wherein (C) is performed inside the same chamber as the first chamber in which (B) is performed. (3) The particle measurement method according to (1), wherein (C) is performed inside a chamber different from the first chamber in which (B) is performed. (4) The particle measurement method according to any one of (1) to (3), wherein, when expanding the nuclei in (B), the temperature at which the organic is supplied is adjusted to the temperature at which the organic vapor is produced, and the temperature of the substrate is adjusted to a temperature lower than the melting point of the organic. (5) The particle measurement method according to (4), wherein (D) after the nuclei are enlarged in (B), the nuclei are further enlarged by Ostwald aging. (6) The particle measurement method according to any one of (1) to (5), wherein (E) the organic matter is vaporized and removed by adjusting at least one of the temperature, pressure, or flow rate of the purge gas, and the organic matter attached to the measured nuclei is vaporized and removed. (7) The particle measurement method according to (6), wherein (E) is performed inside a second chamber different from the chamber in which (C) is performed. (8) The particle measurement method according to any one of (1) to (7), wherein the organic matter is a linear hydrocarbon or a saturated fluorinated hydrocarbon. (9) The particle measurement method according to any one of (1) to (8), wherein the contact angle of water on the surface of the substrate is 30 degrees or less. (10) The particle measurement method according to any one of (1) to (9), wherein the contact angle of water on the surface of the substrate is 10 degrees or less.(11) A particle measuring device comprising: a chamber; a stage on which a substrate is placed inside the chamber; an organic matter supply unit that supplies organic matter vapor to the inside of the chamber; and a control unit, wherein the control unit controls a process including: (A) providing a substrate having a hydrophilic surface to the stage inside the chamber from which organic matter vapor can be supplied from the organic matter supply unit; (B) exposing the substrate to organic matter vapor, thereby causing the organic matter to adhere to defects and / or particles on the surface of the substrate on the stage and to enlarge the nuclei; and (C) measuring the enlarged nuclei on the surface of the substrate. (12) A processing system comprising: a plurality of processing modules including a particle measuring device; a port through which substrates to be transported to the plurality of processing modules can pass; a transport chamber for transporting substrates between the plurality of processing modules; and a control unit, wherein the control unit controls a process including: (A) providing the substrate, whose surface has passed through the port and is hydrophilic, into the particle measuring device capable of supplying organic vapor; (B) exposing the substrate to the organic vapor, causing the organic vapor to adhere to defects and / or particles on the surface of the substrate and to enlarge the nuclei; and (C) measuring the enlarged nuclei on the surface of the substrate in any of the plurality of processing modules transported via the particle measuring device or the transport chamber. (13) The processing system according to (12), wherein the plurality of processing modules include an organic matter removal device, and the control unit adjusts at least one of the temperature, pressure, or flow rate of purge gas that can vaporize and remove the organic matter, and vaporizes and removes the organic matter attached to the measured nuclei.
[0084] 1...Particle measuring device, 2...Chamber, 3...Stage, 4...Temperature control unit, 6...Organic material supply unit, 7...Inert gas supply unit, 8...Exhaust device, 9...Control unit, 10, 110...Processing system, 20...Higher control unit, 51-56, 151-157...Processing modules, 41, 141...Vacuum transport module, W...Substrate
Claims
1. A particle measurement method comprising: (A) providing a substrate having a hydrophilic surface inside a first chamber capable of supplying organic vapor; (B) exposing the substrate to the organic vapor, causing the organic to adhere to defects and / or particles on the surface of the substrate, thereby expanding the nuclei; and (C) measuring the expanded nuclei on the surface of the substrate.
2. The particle measurement method according to claim 1, wherein (C) is performed inside the same chamber as the first chamber in which (B) is performed.
3. The particle measurement method according to claim 1, wherein (C) is performed inside a chamber different from the first chamber in which (B) is performed.
4. The particle measurement method according to claim 1, wherein, when expanding the nucleus in (B) above, the temperature at which the organic matter is supplied is adjusted to a temperature at which the organic matter turns into vapor, and the temperature of the substrate is adjusted to a temperature lower than the melting point of the organic matter.
5. (D) The particle measurement method according to claim 4, wherein after the nuclei are enlarged in (B) above, the nuclei are further enlarged by Ostwald aging.
6. (E) The particle measurement method according to claim 1, wherein the organic matter is vaporized and removed by adjusting at least one of the temperature, pressure, or flow rate of the purge gas, and the organic matter attached to the measured nucleus is vaporized and removed.
7. The particle measurement method according to claim 6, wherein (E) is performed inside a second chamber different from the chamber in which (C) is performed.
8. The particle measurement method according to claim 1, wherein the organic substance is a linear hydrocarbon or a saturated fluorinated hydrocarbon.
9. The particle measurement method according to claim 1, wherein the contact angle of water on the surface of the substrate is 30 degrees or less.
10. The particle measurement method according to claim 1, wherein the contact angle of water on the surface of the substrate is 10 degrees or less.
11. A particle measuring device comprising: a chamber; a stage on which a substrate is placed inside the chamber; an organic matter supply unit for supplying organic matter vapor to the inside of the chamber; and a control unit, wherein the control unit controls a process including: (A) providing a substrate having a hydrophilic surface to the stage inside the chamber from which organic matter vapor can be supplied from the organic matter supply unit; (B) exposing the substrate to organic matter vapor, thereby causing the organic matter to adhere to defects and / or particles on the surface of the substrate on the stage and to enlarge the nuclei; and (C) measuring the enlarged nuclei on the surface of the substrate.
12. A processing system comprising: a plurality of processing modules including a particle measuring device; a port through which substrates to be transported to the plurality of processing modules can pass; a transport chamber for transporting substrates between the plurality of processing modules; and a control unit, wherein the control unit controls a process including: (A) providing the substrate, whose surface has passed through the port and is hydrophilic, into the particle measuring device capable of supplying organic vapor; (B) exposing the substrate to the organic vapor, causing the organic vapor to adhere to defects and / or particles on the surface of the substrate and to enlarge the nuclei; and (C) measuring the enlarged nuclei on the surface of the substrate in any of the plurality of processing modules transported via the particle measuring device or the transport chamber.
13. The processing system according to claim 12, wherein the plurality of processing modules include an organic matter removal device, and the control unit (E) adjusts at least one of a temperature, pressure, or flow rate of purge gas that can vaporize and remove the organic matter, and vaporizes and removes the organic matter attached to the measured nucleus.