Substrate support base, substrate processing device, and assembly

Abstract

This substrate support base comprises: an upper member having a substrate support surface; a base; an intermediate member disposed between the upper member and the base, the intermediate member including a liquid metal accommodation part configured such that a liquid metal is movably accommodated therein; and a liquid metal drive unit configured so as to cause the liquid metal to move inside the liquid metal accommodation part.

Description

Substrate support table, substrate processing apparatus, and assembly

[0001] Exemplary embodiments of the present disclosure relate to a substrate support table, a substrate processing apparatus, and an assembly.

[0002] In a mounting table of a processing apparatus for non-workpieces, there is a technique described in Patent Document 1 as a technique enabling temperature control corresponding to changes in the distribution of heat input.

[0003] Japanese Unexamined Patent Application Publication No. 2021 - 93543

[0004] The present disclosure provides a technique capable of changing the thermal resistance of a substrate support table.

[0005] A substrate support table in one exemplary embodiment of the present disclosure includes an upper member having a substrate support surface, a base, and an intermediate member disposed between the upper member and the base. The intermediate member includes a liquid metal accommodation portion configured to accommodate liquid metal movably, and a liquid metal driving portion configured to move the liquid metal within the liquid metal accommodation portion.

[0006] According to one exemplary embodiment of the present disclosure, a technique capable of changing the thermal resistance of a substrate support table can be provided.

[0007] This is a diagram illustrating an example configuration of a plasma processing system. This is a diagram illustrating an example configuration of a capacitively coupled plasma processing apparatus. This is a diagram illustrating an example configuration of a substrate support section. This is a plan view of an intermediate member illustrating an example arrangement of a liquid metal containment section and a field generating electrode. This is a diagram illustrating an example configuration of the area around the liquid metal containment section of the intermediate member. This is a diagram illustrating an example of liquid metal in the liquid metal containment section when a voltage is applied to the field generating electrode. This is a diagram illustrating an example of control of a plasma processing apparatus. This is a diagram illustrating an example of fluctuations in the voltage applied to the field generating electrode and the thermal resistance of the intermediate member in the operation sequence of a plasma processing apparatus. This is a diagram illustrating an example of the area around the liquid metal containment section of the intermediate member when the electrostatic chuck has ground potential. This is a plan view of an intermediate member illustrating another example arrangement of the liquid metal containment section and the field generating electrode. This is a diagram illustrating an example where multiple field generating electrodes are arranged in the liquid metal containment section of the intermediate member. This is a plan view of an intermediate member illustrating another example arrangement of the liquid metal containment section and the field generating electrode. This is a plan view of an intermediate member illustrating another example arrangement of the liquid metal containment section and the field generating electrode. This is a diagram illustrating an example where a field generating electrode is arranged on the main body of the intermediate member. This is a diagram illustrating an example of the assembly configuration as viewed from above. This is a diagram illustrating an example of the assembly configuration in the A-A section of Figure 15. This is a diagram illustrating an example of the assembly configuration in the B-B section of Figure 15. This is a diagram illustrating an example of the liquid metal in the liquid metal containment when a voltage is applied to the field generating electrode. This is a diagram illustrating an example of the configuration of a plasma processing apparatus having multiple assemblies. This is a diagram illustrating an example of controlling the chamber temperature using multiple assemblies. This is a diagram illustrating an example of controlling the chamber temperature using multiple assemblies. This is a diagram illustrating an example of controlling the chamber temperature using multiple assemblies. This is a diagram illustrating an example of the configuration of another assembly. This is a diagram illustrating an example of the configuration of the top plate as viewed from above. This is an enlarged view illustrating an example of the configuration of the liquid metal containment. This is a diagram illustrating an example of the liquid metal in the liquid metal containment when a voltage is applied to the field generating electrode.

[0008] The embodiments of this disclosure are described below.

[0009] In one exemplary embodiment, a substrate support is provided, comprising: an upper member having a substrate support surface; a base; an intermediate member disposed between the upper member and the base, the intermediate member including a liquid metal housing configured to movably house liquid metal; and a liquid metal drive unit configured to move the liquid metal within the liquid metal housing.

[0010] In one exemplary embodiment, the liquid metal drive is configured to move the liquid metal by an electric field.

[0011] In one exemplary embodiment, the liquid metal drive unit has an electric field generating electrode configured to generate an electric field in the liquid metal containment.

[0012] In one exemplary embodiment, the field generating electrode is located within an intermediate member.

[0013] In one exemplary embodiment, the field generating electrode is placed within the liquid metal containment.

[0014] In one exemplary embodiment, the field generating electrode is located within the upper member.

[0015] In one exemplary embodiment, the upper member is electrically connected to the ground potential.

[0016] In one exemplary embodiment, the base is electrically connected to the ground potential.

[0017] In one exemplary embodiment, the intermediate member includes a plurality of liquid metal containments.

[0018] In one exemplary embodiment, the liquid metal drive unit comprises a plurality of field generating electrodes, each of which is disposed in each of a plurality of liquid metal containments.

[0019] In one exemplary embodiment, each of the multiple liquid metal containments has the same shape.

[0020] In one exemplary embodiment, each of the multiple liquid metal containments has a columnar shape.

[0021] In one exemplary embodiment, each of the multiple field generating electrodes has a columnar shape.

[0022] In one exemplary embodiment, each of the plurality of liquid metal containments has a circular or arc shape in plan view, with the center of the intermediate member as its center.

[0023] In one exemplary embodiment, each of the plurality of field generating electrodes has a ring shape, an arc shape, or a cross shape in plan view.

[0024] In one exemplary embodiment, the base has a channel through which a temperature-controlled medium flows.

[0025] In one exemplary embodiment, the upper member has a heater.

[0026] In one exemplary embodiment, a substrate processing apparatus is provided, comprising a chamber, a substrate support base disposed within the chamber, and a gas supply unit configured to supply a processing gas into the chamber, wherein the substrate support base comprises an upper member having a substrate support surface, a base, an intermediate member disposed between the upper member and the base, the intermediate member including a liquid metal housing configured to movably house liquid metal, and a liquid metal drive unit configured to move liquid metal within the liquid metal housing.

[0027] In one exemplary embodiment, the substrate processing apparatus further comprises a plasma generation unit configured to generate plasma from a processing gas within a chamber.

[0028] In one exemplary embodiment, the substrate processing apparatus further comprises a control unit, which is configured to perform (a) moving a liquid metal within a liquid metal containment unit by a liquid metal drive unit.

[0029] In one exemplary embodiment, (a) includes (a-1) placing the liquid metal in a first position to make the resistance of the intermediate member toward the base a first thermal resistance, and (a-2) placing the liquid metal in a second position to make the resistance of the intermediate member toward the base a second thermal resistance different from the first thermal resistance.

[0030] Hereinafter, each embodiment of this disclosure will be described in detail with reference to the drawings. In each drawing, the same or similar elements are denoted by the same reference numeral, and redundant explanations are omitted. Unless otherwise specified, positional relationships such as top, bottom, left, and right will be described based on the positional relationships shown in the drawings. The dimensional ratios in the drawings do not represent actual ratios, and actual ratios are not limited to those shown.

[0031] <First Embodiment> <Example of a Plasma Processing System>

[0032] Figure 1 is a diagram illustrating an example configuration of a plasma processing system. In one embodiment, the plasma processing system includes a plasma processing apparatus 1 and a control unit 2. The plasma processing system is an example of a substrate processing system, and the plasma processing apparatus 1 is an example of a substrate processing apparatus. The plasma processing apparatus 1 includes a plasma processing chamber 10, a substrate support unit 11, and a plasma generation unit 12. The plasma processing chamber 10 has a plasma processing space. The plasma processing chamber 10 also has at least one gas supply port for supplying at least one processing gas to the plasma processing space, and at least one gas outlet for discharging gas from the plasma processing space. The gas supply port is connected to a gas supply unit 20, which will be described later, and the gas outlet is connected to an exhaust system 40, which will be described later. The substrate support unit 11 is located in the plasma processing space and has a substrate support surface for supporting a substrate.

[0033] The plasma generation unit 12 is configured to generate plasma from at least one processing gas supplied into the plasma processing space. The plasma formed in the plasma processing space may be capacitively coupled plasma (CCP), inductively coupled plasma (ICP), ECR (Electron Cyclotron Resonance) plasma, helicon wave excited plasma (HWP), or surface wave plasma (SWP), etc. Various types of plasma generation units, including AC (Alternating Current) plasma generation units and DC (Direct Current) plasma generation units, may also be used. In one embodiment, the AC signal (AC power) used in the AC plasma generation unit has a frequency in the range of 100 kHz to 10 GHz. Therefore, the AC signal includes an RF (Radio Frequency) signal and a microwave signal. In one embodiment, the RF signal has a frequency in the range of 100 kHz to 150 MHz.

[0034] The control unit 2 processes computer-executable instructions that cause the plasma processing apparatus 1 to perform the various processes described herein. The control unit 2 may be configured to control the elements of the plasma processing apparatus 1 to perform the various processes described herein. In one embodiment, part or all of the control unit 2 may be included in the plasma processing apparatus 1. The control unit 2 is implemented, for example, by a computer 2a. The control unit 2 may include a processing unit 2a1, a storage unit 2a2, and a communication interface 2a3. The functions realized by the processing unit 2a1 described herein may be implemented in a circuit or processing circuit, including a general-purpose processor, an application-specific processor, integrated circuits, ASICs (Application Specific Integrated Circuits), a CPU (Central Processing Unit), a conventional circuit, and / or a combination thereof, programmed to realize the described functions. The processor is considered to be a circuit or processing circuit, including transistors and other circuits. The processor may be a programmed processor that executes a program stored in the storage unit 2a2. This program may be pre-stored in the storage unit 2a2 or retrieved via a medium when needed. The acquired program is stored in the storage unit 2a2 and read from the storage unit 2a2 and executed by the processing unit 2a1. The medium may be various storage media readable by the computer 2a, or it may be a communication line connected to the communication interface 2a3. The storage unit 2a2 may include RAM (Random Access Memory), ROM (Read Only Memory), HDD (Hard Disk Drive), SSD (Solid State Drive), or a combination thereof. The communication interface 2a3 may communicate with the plasma processing device 1 via a communication line such as a LAN (Local Area Network).In this disclosure, circuits, units, and means are hardware programmed to perform or configured to perform the functions described. Such hardware may be any hardware described in this disclosure, or any hardware known to be programmed to perform or execute the functions described. If such hardware is a processor that is considered to be a type of circuit, such circuit, means, or unit is a combination of hardware and software used to constitute such hardware and / or processor.

[0035] The following describes an example configuration of a capacitively coupled plasma processing apparatus as an example of a plasma processing apparatus 1. Figure 2 is a diagram illustrating an example configuration of a capacitively coupled plasma processing apparatus.

[0036] The capacitively coupled plasma processing apparatus 1 includes a plasma processing chamber 10, a gas supply unit 20, a power supply system 30, and an exhaust system 40. The plasma processing apparatus 1 also includes a substrate support unit 11 and a gas introduction unit. The gas introduction unit is configured to introduce at least one processing gas into the plasma processing chamber 10. The gas introduction unit includes a shower head 13. The substrate support unit 11 is located inside the plasma processing chamber 10. The shower head 13 is located above the substrate support unit 11. In one embodiment, the shower head 13 constitutes at least a portion of the ceiling of the plasma processing chamber 10. The plasma processing chamber 10 has a plasma processing space 10s defined by the shower head 13, the side walls 10a of the plasma processing chamber 10, and the substrate support unit 11. The plasma processing chamber 10 is grounded. The shower head 13 and the substrate support unit 11 are electrically insulated from the housing of the plasma processing chamber 10.

[0037] The substrate support portion 11 includes a main body portion 111 and a ring assembly 112. The main body portion 111 has a central region 111a for supporting the substrate W and an annular region 111b for supporting the ring assembly 112. A wafer is an example of a substrate W. The annular region 111b of the main body portion 111 surrounds the central region 111a of the main body portion 111 in a plan view. The substrate W is placed on the central region 111a of the main body portion 111, and the ring assembly 112 is placed on the annular region 111b of the main body portion 111 so as to surround the substrate W on the central region 111a of the main body portion 111. Therefore, the central region 111a is also called the substrate support surface for supporting the substrate W, and the annular region 111b is also called the ring support surface for supporting the ring assembly 112.

[0038] In one embodiment, the main body 111 includes a base 1110 and an electrostatic chuck 1111. The base 1110 includes a conductive member. The conductive member of the base 1110 can function as a lower electrode. The electrostatic chuck 1111 is placed on the base 1110. The electrostatic chuck 1111 includes a ceramic member 1111a and an electrostatic chuck electrode 1111b placed within the ceramic member 1111a. The electrostatic chuck electrode 1111b is also called a clamping electrode. In one embodiment, the electrostatic chuck electrode 1111b is electrically connected or coupled to a chuck power supply. The chuck power supply may be a DC power supply or an AC power supply. The ceramic member 1111a has a central region 111a. In one embodiment, the ceramic member 1111a also has an annular region 111b. Furthermore, other members surrounding the electrostatic chuck 1111, such as an annular electrostatic chuck or an annular insulating member, may have an annular region 111b. In this case, the ring assembly 112 may be placed on the annular electrostatic chuck or the annular insulating member, or it may be placed on both the electrostatic chuck 1111 and the annular insulating member. In addition, at least one bias electrode, which is electrically connected or coupled to the power supply 31 and / or power supply 32 described later, may be placed inside the ceramic member 1111a. In this case, at least one bias electrode functions as a lower electrode. Also, the conductive member of the base 1110 and the bias electrode inside the ceramic member 1111a may function as multiple lower electrodes. In one embodiment, the first voltage generation unit 32a, which functions as a voltage pulse generation unit described later, is electrically connected or coupled to the bias electrode inside the ceramic member 1111a, and the first RF generation unit 31a, described later, is electrically connected or coupled to the conductive member of the base 1110. Furthermore, the electrostatic chuck electrode 1111b may function as a lower electrode. Therefore, the substrate support portion 11 includes at least one lower electrode.

[0039] The ring assembly 112 includes one or more annular members. In one embodiment, the one or more annular members include one or more edge rings and at least one covering ring. The edge rings are formed of a conductive or insulating material, and the covering rings are formed of an insulating material.

[0040] The substrate support section 11 may also include a temperature control module configured to adjust at least one of the electrostatic chuck 1111, the ring assembly 112, and the substrate to a target temperature. The temperature control module may include a heater, a heat transfer medium, a flow path 1110a, or a combination thereof. A heat transfer fluid such as brine or gas flows through the flow path 1110a. In one embodiment, the flow path 1110a is formed within the base 1110, and one or more heaters are arranged within the ceramic member 1111a of the electrostatic chuck 1111. The substrate support section 11 may also include a heat transfer gas supply section configured to supply heat transfer gas to the gap between the back surface of the substrate W and the central region 111a.

[0041] The showerhead 13 is configured to introduce at least one processing gas from the gas supply unit 20 into the plasma processing space 10s. The showerhead 13 has at least one gas supply port 13a, at least one gas diffusion chamber 13b, and a plurality of gas inlet ports 13c. The processing gas supplied to the gas supply port 13a passes through the gas diffusion chamber 13b and is introduced into the plasma processing space 10s through the plurality of gas inlet ports 13c. The showerhead 13 also includes at least one upper electrode. In addition to the showerhead 13, the gas introduction unit may also include one or more side gas injectors (SGIs) attached to one or more openings formed in the side wall 10a.

[0042] The gas supply unit 20 may include at least one gas source 21 and at least one flow controller 22. In one embodiment, the gas supply unit 20 is configured to supply at least one processing gas to the shower head 13 from a corresponding gas source 21 via a corresponding flow controller 22. Each flow controller 22 may include, for example, a mass flow controller or a pressure-controlled flow controller. Furthermore, the gas supply unit 20 may include at least one flow modulation device that modulates or pulses the flow rate of at least one processing gas.

[0043] The power supply system 30 includes a power supply 31 that is electrically connected or coupled to the plasma processing chamber 10. In one embodiment, the power supply 31 is electrically connected or coupled to the plasma processing chamber 10 via at least one impedance matcher. The impedance matcher may be a mechanically controlled matcher or an electronically controlled matcher. The power supply 31 is configured to supply at least one RF signal (RF power) to at least one lower electrode and / or at least one upper electrode. Thereby, plasma is generated from at least one processing gas supplied to the plasma processing space 10s. Accordingly, the power supply 31 can function as at least a part of the plasma generation unit 12. Also, by supplying a bias RF signal to at least one lower electrode, a bias potential is generated in the substrate W, and the ion component in the formed plasma can be drawn into the substrate W.

[0044] The power supply 31 includes a first RF generation unit 31a and a second RF generation unit 31b. The first RF generation unit 31a is electrically connected or coupled to at least one lower electrode and / or at least one upper electrode, and is configured to generate a source RF signal (source RF power) for generating plasma in the plasma processing space 10s. In one embodiment, the first RF generation unit 31a is electrically connected or coupled to at least one lower electrode and / or at least one upper electrode via at least one impedance matcher. In one embodiment, the source RF signal has a frequency within the range of 10 MHz to 150 MHz. In one embodiment, the first RF generation unit 31a may be configured to generate a plurality of source RF signals having different frequencies. The generated one or more source RF signals are supplied to at least one lower electrode and / or at least one upper electrode.

[0045] The second RF generation unit 31b is electrically connected to or coupled to at least one lower electrode and is configured to generate a bias RF signal (bias RF power). In one embodiment, the second RF generation unit 31b is electrically connected to or coupled to at least one lower electrode via at least one impedance matcher. When the first RF generation unit 31a is electrically connected to or coupled to a lower electrode, the second RF generation unit 31b may be electrically connected to or coupled to the same lower electrode, or it may be electrically connected to or coupled to a different lower electrode. The frequency of the bias RF signal may be the same as or different from the frequency of the source RF signal. In one embodiment, the bias RF signal has a frequency lower than the frequency of the source RF signal. In one embodiment, the bias RF signal has a frequency in the range of 100 kHz to 60 MHz. In one embodiment, the second RF generation unit 31b may be configured to generate a plurality of bias RF signals having different frequencies. The generated one or more bias RF signals are supplied to at least one lower electrode. In various embodiments, at least one of the source RF signal and the bias RF signal may be pulsed.

[0046] The power supply system 30 may also include a power supply 32 that is electrically connected to or coupled to the plasma processing chamber 10. The power supply 32 includes a first voltage generation unit 32a and a second voltage generation unit 32b. In one embodiment, the first voltage generation unit 32a is electrically connected to or coupled to at least one lower electrode and is configured to generate a first voltage signal. The generated first voltage signal is applied to at least one lower electrode. In one embodiment, the second voltage generation unit 32b is electrically connected to or coupled to at least one upper electrode and is configured to generate a second voltage signal. The generated second voltage signal is applied to at least one upper electrode.

[0047] In various embodiments, the first and / or second voltage signals may be pulsed. In this case, the first voltage generation unit 32a and / or the second voltage generation unit 32b function as a voltage pulse generation unit configured to generate a sequence of voltage pulses. Accordingly, the sequence of voltage pulses is applied to at least one lower electrode and / or at least one upper electrode. In one embodiment, the sequence of voltage pulses has a plurality of cycles, and each cycle includes a burst of voltage pulses in a first period and a constant reference voltage in a second period. That is, in the sequence of voltage pulses, the burst of voltage pulses is repeated. The absolute value of the voltage level of the voltage pulse is greater than the absolute value of the voltage level of the reference voltage. The voltage pulse may have a rectangular, trapezoidal, triangular or any waveform having a combination thereof, and the arbitrary waveform may change over time. The voltage pulse may have a positive polarity or a negative polarity. Also, the sequence of voltage pulses may include one or more positive-polarity voltage pulses and one or more negative-polarity voltage pulses within one cycle. Note that the first and second voltage generation units 32a and 32b may be provided in addition to the power supply 31, or the first voltage generation unit 32a may be provided in place of the second RF generation unit 31b.

[0048] The exhaust system 40 can be connected to, for example, the gas discharge port 10e provided at the bottom of the plasma processing chamber 10. The exhaust system 40 may include a pressure regulating valve and a vacuum pump. The pressure in the plasma processing space 10s is adjusted by the pressure regulating valve. The vacuum pump may include a turbo molecular pump, a dry pump or a combination thereof.

[0049] <Example configuration of substrate support>FIG. 3 is a diagram for explaining an example configuration of the substrate support 11. The substrate support 11 is an example of a substrate support table. In one embodiment, the substrate support 11 includes a base 1110, an electrostatic chuck 1111, an intermediate member 200, and a liquid metal drive unit 201. The electrostatic chuck 1111 is an example of an upper member.

[0050] In one embodiment, the base 1110 has a substantially cylindrical shape. The base 1110 may be made of metal, metal matrix composite (MMC), or ceramic.

[0051] In one embodiment, the base 1110 has a flow path 1110a through which a temperature-controlled medium flows. The flow path 1110a is located inside the base 1110. The flow path 1110a is connected to a medium supply unit 251 located outside the chamber 10 via a connecting flow path 250. The medium supply unit 251 is configured to supply a temperature-controlled refrigerant adjusted to a set temperature to the flow path 1110a via the connecting flow path 250, and to return the temperature-controlled refrigerant that has passed through the flow path 1110a to the medium supply unit 251 via the connecting flow path 250. The base 1110 is configured to dissipate heat input from the electrostatic chuck 1111 and the intermediate member 200 side by the temperature-controlled medium flowing through the flow path 1110a, thereby cooling the electrostatic chuck 1111 and the substrate W on the electrostatic chuck 1111. The temperature-controlled medium may be a gas or a liquid.

[0052] In one embodiment, the electrostatic chuck 1111 has a ceramic member 1111a and an electrostatic chuck electrode 1111b.

[0053] In one embodiment, the ceramic member 1111a has a substantially cylindrical shape. The ceramic member 1111a has a substrate support surface 300 on its upper surface that supports the substrate W. In one embodiment, the substrate support surface 300 includes a horizontal surface 310, a plurality of protrusions 311, and a sealing band 312. The plurality of protrusions 311 and the sealing band 312 protrude upward from the horizontal surface 310. The sealing band 312 is configured in an annular shape so as to surround the outside of the protrusions 311. The sealing band 312 is positioned on the outer periphery of the substrate support surface 300. The protrusions 311 and the sealing band 312 are configured to contact the back surface of the substrate W when the substrate W is supported on the substrate support surface 300. A gas outlet may be formed in the horizontal surface 310. The gas outlet may be connected to a heat transfer gas supply unit located outside the chamber 10. The heat transfer gas supply unit may be configured to supply heat transfer gas from a gas outlet into the space formed between the substrate W and the horizontal surface 310, thereby enabling temperature control of the substrate W.

[0054] In one embodiment, the electrostatic chuck electrode 1111b is positioned within the ceramic member 1111a below the substrate support surface 300. The electrostatic chuck electrode 1111b is electrically connected to a DC power supply 351 via a switch 350. By applying a DC voltage to the electrostatic chuck electrode 1111b using the DC power supply 351, an electrostatic attractive force (Coulomb force) can be generated between the ceramic member 1111a and the substrate W. The substrate W is attracted to the ceramic member 1111a by this electrostatic attractive force and is held by adsorption to the substrate support surface 300 on the ceramic member 1111a.

[0055] In one embodiment, the electrostatic chuck 1111 further comprises a heater 360. The heater 360 is located inside the ceramic member 1111a. The heater 360 is located below the electrostatic chuck electrode 1111b. The electrostatic chuck 1111 may comprise a plurality of heaters 360. The heater 360 is electrically connected to a power supply 380. The power supply 380 is configured to supply power to the heater 360 so that the heater 360 can generate heat.

[0056] In one embodiment, the intermediate member 200 is positioned between the base 1110 and the electrostatic chuck 1111. The intermediate member 200 has a substantially cylindrical shape. The upper surface of the intermediate member 200 is in contact with the lower surface of the electrostatic chuck 1111, and the lower surface of the intermediate member 200 is in contact with the upper surface of the base 1110.

[0057] The intermediate member 200 includes a plurality of liquid metal containment sections (liquid metal containment spaces) 400. As shown in Figures 3 and 4, the plurality of liquid metal containment sections 400 may be evenly arranged within the plane of the main body 200a of the intermediate member 200. Each of the plurality of liquid metal containment sections 400 has a columnar shape (circular or rectangular shape in plan view). In one embodiment, each of the plurality of liquid metal containment sections 400 has a hexagonal prism shape (hexagonal shape in plan view). Each of the plurality of liquid metal containment sections 400 may have the same shape and size. The main body 200a of the intermediate member 200 has a plurality of hexagonal prism-shaped side wall surfaces 410 that define each liquid metal containment section 400. The main body 200a of the intermediate member 200 has a honeycomb structure having a plurality of side wall surfaces 410. As shown in Figure 5, each of the liquid metal containment sections 400 is defined by a side wall surface 410, the lower surface 1111c of the ceramic member 1111a, and the upper surface 1110b of the base 1110.

[0058] Each of the multiple liquid metal containments 400 contains a liquid metal 420. The liquid metal 420 has a volume smaller than the volume within each liquid metal containment 400. The remaining portion of each liquid metal containment 400 contains a gas 421, which allows the liquid metal 420 to move within the liquid metal containment 400. The liquid metal 420 may be, for example, GaInSn or mercury. The thermal conductivity of the liquid metal 420 is greater than that of the body 200a of the intermediate member 200. The body 200a of the intermediate member 200 may be made of resin. The body 200a of the intermediate member 200 may be made of a material with lower thermal conductivity than the material of the electrostatic chuck 1111 and the base 1110. Alternatively, the body 200a of the intermediate member 200 may be made of a material with higher thermal conductivity than the material of the electrostatic chuck 1111 and the base 1110.

[0059] The liquid metal drive unit 201 is configured to move the liquid metal 420 within the liquid metal containment unit 400. In one embodiment, as shown in Figure 3, the liquid metal drive unit 201 has a plurality of field generating electrodes 450 and a circuit board 451.

[0060] As shown in Figures 3 and 4, each of the multiple field generating electrodes 450 is positioned in each of the multiple liquid metal housings 400. Each field generating electrode 450 may have a vertically elongated (cylindrical) columnar shape. Each field generating electrode 450 is positioned in the center of the corresponding liquid metal housing 400. As shown in Figure 3, each field generating electrode 450 extends from within the liquid metal housing 400 through the base 1110 and down to below the base 1110. Each field generating electrode 450 is electrically connected to the circuit board 451. As shown in Figure 5, each field generating electrode 450 passes through a through hole 455 formed in the base 1110. A sealing member 456 is positioned between the outer surface of each field generating electrode 450 and the wall surface of the through hole 455.

[0061] As shown in Figure 3, the circuit board 451 is electrically connected to the power supply 460. Power supplied from the power supply 460 enables the circuit board 451 to apply a voltage to each of the field generating electrodes 450. The circuit board 451 may be able to individually adjust the voltage applied to each of the field generating electrodes 450.

[0062] The liquid metal drive unit 201 is configured to move the liquid metal 420 by applying a voltage to the field generating electrode 450 and forming an electric field in the liquid metal containment unit 400.

[0063] In one embodiment, as shown in Figure 5, when no voltage is applied to the field generating electrode 450, no electric field is generated in the liquid metal containment section 400, and the liquid metal 420 is positioned at the bottom of the liquid metal containment section 400 due to gravity. At this time, the gas 421 is positioned at the top of the liquid metal containment section 400. In this state, the contact area between the liquid metal 420 and the electrostatic chuck 1111 in the liquid metal containment section 400 of the intermediate member 200 becomes small, and the thermal resistance to heat directed from the electrostatic chuck 1111 to the base 1110 in the intermediate member 200 becomes relatively high (relatively low thermal conductivity).

[0064] As shown in Figure 6, by applying a voltage to the field generating electrode 450, an electric field is generated in the liquid metal housing 400, and the liquid metal 420 moves, for example, in the direction away from the field generating electrode 450 where the potential is lower, and moves around the wall surface of the liquid metal housing 400. The gas 421 moves closer to the field generating electrode 450. In one embodiment, the liquid metal 420 contacts the lower surface 1111c of the electrostatic chuck 1111 while also contacting the upper surface 1110b of the base 1110. As a result, the contact area between the liquid metal 420 and the electrostatic chuck 1111 in the liquid metal housing 400 of the intermediate member 200 is increased, and the thermal resistance to heat flowing from the electrostatic chuck 1111 to the base 1110 in the intermediate member 200 becomes relatively low (relatively high thermal conductivity).

[0065] In one embodiment, the ceramic member 1111a is electrically connected to the ground potential. The base 1110 is electrically connected to the ground potential. The portion of the liquid metal housing 400 exposed to the liquid metal 420, for example, the side wall surface 410, the lower surface 1111c of the ceramic member 1111a, the upper surface 1110b of the base 1110, and the field generating electrode 450 may be covered with an insulated film. The insulated film may be formed by thermal spraying.

[0066] <Example of Plasma Processing Method> The plasma processing method performed in the plasma processing apparatus 1 includes an etching process in which a film on a substrate W is etched using plasma. In one embodiment, the plasma processing method is executed by the control unit 2 in the plasma processing apparatus 1.

[0067] First, as shown in Figure 2, the substrate W is brought into the chamber 10 and placed on the substrate support portion 11. At this time, as shown in Figure 3, the substrate W is placed on the substrate support surface 300 of the ceramic member 1111a, and the back surface of the substrate W is supported by the projection portion 311 and the seal band 312. A DC voltage is applied to the electrostatic chuck electrode 1111b, generating an electrostatic attraction between the electrostatic chuck 1111 and the substrate W, and the substrate W is electrostatically attracted to the electrostatic chuck 1111.

[0068] A heat transfer medium is supplied to the flow path 1110a of the temperature control module, and the substrate W of the electrostatic chuck 1111 is temperature-adjusted to a given temperature.

[0069] The processing gas is supplied to the showerhead 13 by the gas supply unit 20 shown in Figure 2, and then supplied from the showerhead 13 to the plasma processing space 10s. The processing gas supplied at this time includes a gas that generates the active species necessary for etching the substrate W.

[0070] One or more RF signals are supplied from the RF power supply 31 to the upper electrode and / or lower electrode. The atmosphere inside the plasma processing space 10s is exhausted from the gas outlet 10e, and the inside of the plasma processing space 10s is depressurized. Plasma is generated on the substrate support portion 11 of the plasma processing space 10s, and the substrate W is etched.

[0071] Subsequently, the RF signal supply is stopped, plasma generation is halted, and the etching process of substrate W is completed.

[0072] In one embodiment, the plasma processing apparatus 1 may perform a step ST1 in which the liquid metal 420 is moved within the liquid metal housing 400 by the liquid metal drive unit 201. Step ST1 may be performed during plasma processing. In one embodiment, as shown in Figure 7, step ST1 includes a step ST1-1 in which the liquid metal 420 is positioned in a first position to make the resistance to heat from the electrostatic chuck 1111 toward the base 1110 in the intermediate member 200 a first thermal resistance, and a step ST1-2 in which the liquid metal 420 is positioned in a second position to make the resistance to heat from the electrostatic chuck 1111 toward the base 1110 in the intermediate member 200 a second thermal resistance different from the first thermal resistance. The first position of the liquid metal 420 may be in the lower part of the liquid metal housing 400, as shown in Figure 5. The second position of the liquid metal 420 may be around the wall surface of the liquid metal housing 400, as shown in Figure 6.

[0073] As shown in Figure 8, the plasma processing apparatus 1 may have an operation sequence in plasma processing that includes a waiting period S1, a heating period S2, a processing period S3, and a cooling period S4.

[0074] The waiting period S1 may include the period immediately before and immediately after the substrate W is placed on the substrate support 11. At this time, as shown in Figure 5, no voltage is applied to the field generating electrode 450 (voltage application OFF), no electric field is generated in the liquid metal housing 400, and the liquid metal 420 is positioned in the lower part (first position) of the liquid metal housing 400 due to gravity. The gas 421 is positioned in the upper part of the liquid metal housing 400. In the liquid metal housing 400 of the intermediate member 200, the contact area between the liquid metal 420 and the electrostatic chuck 1111 becomes smaller, and the resistance to heat from the electrostatic chuck 1111 to the base 1110 in the intermediate member 200 becomes a relatively high first thermal resistance G1 (shown in Figure 8).

[0075] During the heating period S2 shown in Figure 8, the temperature of the substrate W is raised by the heater 360 before the plasma is generated. At this time, no voltage is applied to the field generating electrode 450 (voltage application OFF), the liquid metal 420 is positioned at the bottom of the liquid metal housing 400 by gravity, and the gas 421 is positioned at the top. As a result, the resistance to heat from the electrostatic chuck 1111 to the base 1110 in the intermediate member 200 is maintained at the first thermal resistance G1. This makes it difficult for heat from the heater 360 to escape to the base 1110, and the temperature of the substrate W is raised efficiently.

[0076] During the processing period S3 shown in Figure 8, an RF signal is supplied to the upper electrode and / or lower electrode, and plasma is generated in the chamber 10. At this time, a temperature-controlled medium at a constant temperature flows through the flow path 1110a in the base 1110. At this time, as shown in Figure 6, a voltage is applied to the field generating electrode 450 (voltage application ON), an electric field is generated in the liquid metal containment section 400, and the liquid metal 420 moves away from the field generating electrode 450 and moves to the vicinity of the wall surface of the liquid metal containment section 400 (second position). As a result, the contact area between the liquid metal 420 and the electrostatic chuck 1111 in the liquid metal containment section 400 of the intermediate member 200 increases, and the resistance to heat from the electrostatic chuck 1111 to the base 1110 in the intermediate member 200 becomes a relatively low second thermal resistance G2 (shown in Figure 8). As a result, heat from the plasma heat source is efficiently transferred to the base 1110 through the substrate W, electrostatic chuck 1111, and intermediate member 200, and then discharged by the temperature control medium. This efficiently cools the substrate W and the substrate support 11.

[0077] The cooling period S4 shown in Figure 8 may be the period after the RF signal supply is stopped and plasma generation is stopped. At this time, a voltage is continuously applied to the field generating electrode 450 (voltage application ON), and the liquid metal 420 moves away from the field generating electrode 450 and is positioned around the wall surface of the liquid metal housing 400 (second position). As a result, the resistance of the intermediate member 200 to heat moving from the electrostatic chuck 1111 to the base 1110 becomes a relatively low second thermal resistance G2. As a result, heat from the substrate W and the electrostatic chuck 1111 is efficiently transferred to the base 1110 and discharged by the temperature control medium. As a result, the temperature of the substrate W is efficiently lowered.

[0078] The thermal resistance of the intermediate member 200 during the waiting period S1 may differ from the thermal resistance during the heating period S2. For example, the thermal resistance of the intermediate member 200 during the heating period S2 may be greater than the thermal resistance during the waiting period S1. The thermal resistance of the intermediate member 200 during the processing period S3 may differ from the thermal resistance during the cooling period S4. For example, the thermal resistance of the intermediate member 200 during the processing period S3 may be greater than the thermal resistance during the cooling period S4.

[0079] According to this exemplary embodiment, the substrate support 11 includes an electrostatic chuck 1111, a base 1110, an intermediate member 200, and a liquid metal drive unit 201. The intermediate member 200 includes a liquid metal housing 400 configured to movably house a liquid metal 420. The liquid metal drive unit 201 is configured to move the liquid metal 420 within the liquid metal housing 400. By moving the liquid metal 420 within the liquid metal housing 400, the resistance of the intermediate member 200 to heat from the electrostatic chuck 1111 to the base 1110 can be changed. This makes it possible to change the thermal resistance of the substrate support 11.

[0080] The liquid metal drive unit 201 is configured to move the liquid metal 420 using an electric field. This allows for proper movement of the liquid metal 420.

[0081] The liquid metal drive unit 201 has an electric field generating electrode 450 configured to generate an electric field in the liquid metal containment unit 400. This allows for proper generation of the electric field.

[0082] The field generating electrode 450 is placed inside the liquid metal containment section 400. This allows for proper generation of an electric field in the liquid metal containment section 400.

[0083] The electrostatic chuck 1111 is electrically connected to the ground potential. This allows for the formation of a potential difference between the field generating electrode 450 and the electrostatic chuck 1111, enabling proper generation of an electric field.

[0084] The base 1110 is electrically connected to the ground potential. This allows for the formation of a potential difference between the field generating electrode 450 and the base 1110, enabling proper generation of an electric field.

[0085] The intermediate member 200 includes a plurality of liquid metal containment sections 400. Each of the plurality of field generating electrodes 450 is positioned in each of the plurality of liquid metal containment sections 400. This allows for precise adjustment of the thermal resistance of the intermediate member 200. Furthermore, the thermal resistance can be changed within the plane of the intermediate member 200.

[0086] Each of the multiple liquid metal containment sections 400 has the same shape. This makes it easy to adjust the thermal resistance of the intermediate member 200.

[0087] In the above embodiment, a voltage may be applied to some of the multiple field generating electrodes 450, causing some of the liquid metal 420 in the multiple liquid metal housing portions 400 of the intermediate member 200 to move. The number and position of the field generating electrodes 450 to which the voltage is applied can be arbitrarily selected. In this case, the more field generating electrodes 450 to which the voltage is applied, the smaller the overall thermal resistance of the intermediate member 200 becomes. This makes it possible to adjust the thermal resistance of the intermediate member 200.

[0088] In the above embodiment, the voltage level applied to each of the multiple field generating electrodes 450 may be adjusted. The position of the liquid metal 420 changes depending on the applied voltage level. This makes it possible to adjust the thermal resistance in the intermediate member 200.

[0089] In the above embodiment, as shown in Figure 9, the ceramic member 1111a may be provided with a grounding electrode 500 that is electrically connected to the ground potential. The grounding electrode 500 may be positioned above each of the plurality of liquid metal housings 400. This stabilizes the electric field generated by the field generating electrode 450, allowing the liquid metal 420 to move stably.

[0090] In the above embodiment, as shown in Figure 10, the plurality of liquid metal housings 400 may have, in plan view, a circular first liquid metal housing 400a positioned at the center of the intermediate member 200, and a plurality of second liquid metal housings 400b having an arc shape with the center of the intermediate member 200 as the center. The plurality of second liquid metal housings 400b are arranged in a ring on the same circumference and are arranged concentrically in the radial direction. The field generating electrode 450 positioned in the first liquid metal housing 400a has an annular shape in plan view, and the field generating electrode 450 positioned in each of the second liquid metal housings 400b may have an arc shape with the center of the intermediate member 200 as the center in plan view.

[0091] In the above embodiments, as shown in Figure 11, a plurality of field generating electrodes 450 may be arranged in each of the plurality of liquid metal containment sections 400. In one embodiment, as shown in Figure 12, two field generating electrodes 450 are arranged in the first liquid metal containment section 400a, and the two field generating electrodes 450 may have an annular shape in plan view and be arranged concentrically. Two field generating electrodes 450 are arranged in each of the second liquid metal containment sections 400b, and the two field generating electrodes 450 may have an arc shape in plan view and be arranged parallel to each other.

[0092] In the above embodiment, as shown in Figure 13, the field generating electrodes 450 arranged in each of the multiple liquid metal containment sections 400 may have a cross shape.

[0093] In the above embodiment, as shown in Figure 14, the multiple field generating electrodes 450 may be arranged not within the liquid metal containment section 400, but within the main body 200a between adjacent liquid metal containment sections 400. In this case, by applying a voltage to the field generating electrodes 450, an electric field can be generated in the liquid metal containment section 400 adjacent to the field generating electrodes 450, causing the liquid metal 420 within the liquid metal containment section 400 to move.

[0094] Furthermore, in the above embodiment, the multiple field generating electrodes 450 may be arranged inside the electrostatic chuck 1111, which is the upper member.

[0095] In the above embodiments, the liquid metal drive unit 201 moved the liquid metal 420 by an electric field, but the liquid metal may be moved by other forces such as a magnetic field. The space other than the liquid metal 420 in the liquid metal containment unit 400 may contain a liquid instead of a gas 421. The liquid may have a lower thermal conductivity than the liquid metal 420.

[0096] In the embodiments described above, an example in which the substrate support portion 11 is used in a capacitively coupled plasma processing apparatus has been explained, but it is not limited to this and may be used in other types of plasma processing apparatuses such as inductively coupled ones. Furthermore, the substrate support portion 11 is not limited to plasma processing apparatuses and may be used in other substrate processing apparatuses.

[0097] <Second Embodiment> The plasma processing apparatus 1 comprises a chamber 10 or an assembly disposed within the chamber 10, the assembly comprising a thermal resistance changing member including a liquid metal housing configured to movably house a liquid metal and a gas, and a liquid metal driving unit configured to move the liquid metal within the liquid metal housing.

[0098] The intermediate member 200 in the first embodiment may be an example of a thermal resistance changing member. In this case, the assembly comprises the intermediate member 200 and the liquid metal drive unit 201.

[0099] In one embodiment, the plasma processing apparatus 1 has an assembly 600. Figure 15 is a diagram illustrating an example of the assembly 600 viewed from above, and Figure 16 is a diagram illustrating an example of the configuration of the assembly 600 in the A-A cross section of Figure 15. In one embodiment, the assembly 600 includes a thermal resistance changing member 610 and a liquid metal driving unit 611.

[0100] As shown in Figure 15, the thermal resistance changing member 610 has an annular body 610a. As shown in Figure 16, the thermal resistance changing member 610 is positioned between the upper member 1500 and the lower member 1501. The thermal resistance changing member 610 is electrically connected to the ground potential. The upper member 1500 and / or the lower member 1501 may also be electrically connected to the ground potential.

[0101] As shown in Figure 15, the thermal resistance changing member 610 includes a plurality of liquid metal housing portions (liquid metal housing spaces) 620. The plurality of liquid metal housing portions 620 may be arranged at equal intervals along the circumferential direction of the annular body 610a of the thermal resistance changing member 610. Each of the plurality of liquid metal housing portions 620 has a bottomed concave shape. Each of the plurality of liquid metal housing portions 620 may have a circular, elliptical, arc-shaped, or rectangular shape in plan view. Each of the plurality of liquid metal housing portions 620 may have the same shape and size. As shown in Figure 16, the annular body 610a of the thermal resistance changing member 610 has side wall surfaces 630 and bottom wall surfaces 631 that define each liquid metal housing portion 620. In one embodiment, each of the liquid metal housing portions 620 may be defined by the side wall surface 630, the bottom wall surface 631, and the lower surface 1500a of the upper member 1500.

[0102] Each of the multiple liquid metal housings 620 contains a liquid metal 640. The liquid metal 640 has a volume smaller than the volume within each liquid metal housing 620. The remaining portion of each liquid metal housing 620 contains a gas 641, and the liquid metal 640 is movable within the liquid metal housing 620. The liquid metal 640 may be, for example, GaInSn or mercury. The thermal conductivity of the liquid metal 640 may be less than the thermal conductivity of the annular body 610a of the thermal resistance changing member 610. The annular body 610a of the thermal resistance changing member 610 may be made of a metal such as aluminum. The annular body 610a may be made of the same material as the upper member 1500 and the lower member 1501. In one embodiment, the annular body 610a may be made of a material with lower thermal conductivity than the material of the upper member 1500 and the lower member 1501. In one embodiment, the annular body 610a may be made of a material with higher thermal conductivity than the materials of the upper member 1500 and the lower member 1501.

[0103] The liquid metal drive unit 611 is configured to move the liquid metal 640 within the liquid metal containment unit 620. As shown in Figure 15, the liquid metal drive unit 611 has a plurality of field generating electrodes 650 and a circuit board 651.

[0104] As shown in Figures 15 and 16, each of the multiple field generating electrodes 650 is placed in each liquid metal housing 620. Each field generating electrode 650 may have a vertically elongated rectangular plate shape. Each field generating electrode 650 is placed in the center of the corresponding liquid metal housing 620. As shown in Figure 16, each field generating electrode 650 is placed so as to protrude upward from the annular body 610a of the thermal resistance changing member 610 into the liquid metal housing 620. A bottomed hole 660 is formed in the bottom wall surface 631 of each liquid metal housing 620 of the annular body 610a, and each field generating electrode 650 is placed in each bottomed hole 660. The field generating electrode 650 and the wall surface of the bottomed hole 660 are electrically insulated from each other. A sealing member 661 may be placed between the field generating electrode 650 and the wall surface of the bottomed hole 660 to prevent leakage of the liquid metal 640. As shown in Figure 15, the sealing member 662 is arranged in an annular shape on the surface of the annular body 610a so as to surround the liquid metal containment portion 620.

[0105] As shown in Figure 16, each field generating electrode 650 is electrically connected to a circuit board 651. The circuit board 651 is located inside the annular body 610a. The circuit board 651 is electrically connected to a power supply 670 located outside the thermal resistance changing member 610. Power supplied from the power supply 670 enables the circuit board 651 to apply a voltage to each field generating electrode 650. The circuit board 651 may be able to individually adjust the voltage applied to each of the multiple field generating electrodes 650.

[0106] The thermal resistance changing member 610 is positioned so as to create a gap between it and the lower surface 1500a of the upper member 1500. A sealing member 662 is positioned between the thermal resistance changing member 610 and the upper member 1500 to prevent leakage of the liquid metal 640. The thermal resistance changing member 610 is positioned so as to be in contact with the upper surface 1501a of the lower member 1501. The portions exposed to the liquid metal 640, such as the side wall surface 630 and bottom wall surface 631 of the liquid metal containment portion 620, the lower surface 1500a of the upper member 1500, and the surface of the field generating electrode 650, are covered with an insulated film. The insulated film may be formed by thermal spraying. The insulated film may be a part of the lower surface 1500a of the upper member 1500.

[0107] Figure 17 is a diagram illustrating an example of the configuration of the assembly 600 in the B-B section of Figure 15. As shown in Figure 17, the thermal resistance changing member 610 is fixed to the upper member 1500 by screws 690. Screw holes 691 are formed on the upper surface of the annular body 610a of the thermal resistance changing member 610. As shown in Figure 15, the screw holes 691 are arranged at equal intervals along the circumferential direction of the upper surface of the annular body 610a. Each screw hole 691 is located between adjacent liquid metal containment portions 620.

[0108] As shown in Figure 17, a spacer 692 is placed between the thermal resistance changing member 610 and the lower surface 1500a of the upper member 1500 to maintain a constant gap. The spacer 692 is placed on the upper surface of the annular body 610a. The spacer 692 may be made of a material with lower thermal conductivity than the annular body 610a. The spacer 692 may be made of resin. The spacer 692 is placed in the same position as the screw hole 691. As shown in Figure 15, multiple spacers 692 are placed along the circumferential direction of the annular body 610a of the thermal resistance changing member 610.

[0109] As shown in Figure 17, the thermal resistance changing member 610 has a conductive member 693 that electrically connects it to the upper member 1500. The conductive member 693 may be positioned outside the spacer 692 on the upper surface of the annular body 610a. The conductive member 693 may be positioned inside the spacer 692 on the upper surface of the annular body 610a. The conductive member 693 may be a helical spring. As shown in Figure 15, a plurality of conductive members 693 are arranged along the circumferential direction of the annular body 610a. Each conductive member 693 may have an arc shape.

[0110] The liquid metal drive unit 611 can move the liquid metal 640 by applying a voltage to the field generating electrode 650 and forming an electric field in the liquid metal containment unit 620.

[0111] In one embodiment, as shown in Figure 16, when no voltage is applied to the field generating electrode 650 (OFF state), no electric field is generated in the liquid metal containment section 620, and the liquid metal 640 is positioned at the bottom of the liquid metal containment section 620 due to gravity. At this time, the gas 641 is positioned at the top of the liquid metal containment section 620. In this state, the liquid metal 640 and the upper member 1500 do not come into contact in the liquid metal containment section 620 of the thermal resistance changing member 610, and the thermal resistance of the thermal resistance changing member 610 to heat transferred between the upper member 1500 and the lower member 1501 becomes relatively high (relatively low thermal conductivity).

[0112] As shown in Figure 18, when a voltage is applied to the field generating electrode 650 (ON state), an electric field is generated in the liquid metal housing 620, and the liquid metal 640 moves, for example, in the direction away from the field generating electrode 650 where the potential is lower, and moves around the wall surface of the liquid metal housing 620. The gas 641 moves closer to the field generating electrode 650. In one embodiment, the liquid metal 640 contacts the upper member 1500 while also contacting the side wall surface 630 and the bottom wall surface 631 of the liquid metal housing 620. As a result, in the liquid metal housing 620 of the thermal resistance changing member 610, the contact area between the liquid metal 640 and the upper member 1500 is increased, and the thermal resistance of the thermal resistance changing member 610 to heat transmitted between the upper member 1500 and the lower member 1501 becomes relatively low (relatively high thermal conductivity).

[0113] The assembly 600 configured as described above may be used in multiple locations of the plasma processing apparatus 1. Figure 19 is a diagram illustrating an example configuration of the plasma processing apparatus 1 having multiple assemblies 600 (600a, 600b, 600c, 600d).

[0114] In one embodiment, the plasma processing apparatus 1 includes a first assembly 600a positioned between the top portion 10f of the chamber 10 and the intermediate side wall 10g and the side wall shield 10h, a second assembly 600b positioned between the lower side wall 10i and the intermediate side wall 10g of the chamber 10, a third assembly 600c positioned between the side wall shield 10h and the baffle plate 10j, and a fourth assembly 600d positioned between the baffle plate 10j and the base portion 10k.

[0115] The top portion 10f is the part of the chamber 10 that includes the upper electrode. The top portion 10f may be the part of the chamber 10 that is outside the upper electrode. The top portion 10f may be a top plate positioned at the top of the chamber 10. The intermediate side wall 10g is the part of the side wall 10a of the chamber 10 that is positioned to the side of the plasma processing space 10s. The intermediate side wall 10g may have an annular shape. The side wall shield 10h is positioned inside the intermediate side wall 10g. The side wall shield 10h may have an annular shape. The side wall shield 10h may or may not be in contact with the intermediate side wall 10g. The lower side wall 10i is the part of the side wall 10a of the chamber 10 that is positioned below the intermediate side wall 10g. The lower side wall 10i may have an annular shape. The lower side wall 10i may have a heating function 10m such as a heater.

[0116] The baffle plate 10j is positioned between the outer circumferential surface of the substrate support portion 11 and the side wall 10a of the chamber 10. The baffle plate 10j may have an annular shape. The baffle plate 10j has a plurality of through holes. The outer circumferential end of the baffle plate 10j reaches below the side wall shield 10h, and the inner circumferential end of the baffle plate 10j reaches above the base portion 10k.

[0117] The base portion 10k is positioned below the base 1110. The base portion 10k is electrically insulated from the base 1110. The base portion 10k may be positioned on the bottom wall 10d of the chamber 10. The base portion 10k may be part of the bottom wall 10d. The base portion 10k may have a cooling function. The top portion 10f, intermediate side wall 10g, side wall shield 10h, lower side wall 10i, baffle plate 10j and base portion 10k may be made of conductive material.

[0118] The thermal resistance changing member 610 of the first assembly 600a is interposed between the top portion 10f and the intermediate side wall 10g and side wall shield 10h. In this case, the top portion 10f becomes the upper member 1500, and the intermediate side wall 10g and side wall shield 10h become the lower member 1501.

[0119] The thermal resistance changing member 610 of the second assembly 600b is interposed between the lower side wall 10i and the intermediate side wall 10g. In this case, the intermediate side wall 10g becomes the upper member 1500, and the lower side wall 10i becomes the lower member 1501.

[0120] The thermal resistance changing member 610 of the third assembly 600c is interposed between the side wall shield 10h and the baffle plate 10j. In this case, the side wall shield 10h becomes the upper member 1500, and the baffle plate 10j becomes the lower member 1501.

[0121] The thermal resistance changing member 610 of the fourth assembly 600d is interposed between the baffle plate 10j and the base portion 10k. In this case, the baffle plate 10j becomes the upper member 1500, and the base portion 10k becomes the lower member 1501. Other configurations of the plasma processing apparatus 1 may be the same as in the first embodiment.

[0122] In the plasma processing apparatus 1, the temperature of the chamber 10 is controlled using a plurality of assemblies 600. In one embodiment, as shown in Figure 20, when raising the temperature of the intermediate side wall 10g, side wall shield 10h, and baffle plate 10j of the chamber 10, a voltage is applied to the field generating electrodes 650 of the first assembly 600a, the second assembly 600b, and the third assembly 600c (ON state). No voltage is applied to the field generating electrode 650 of the fourth assembly 600d (OFF state). At this time, the top portion 10f and the lower side wall 10i have heat sources and are relatively hot. The base portion 10k is relatively cold due to the cooling function.

[0123] When a voltage is applied to the field generating electrode 650 of the first assembly 600a, the liquid metal 640 moves away from the field generating electrode 650, making contact with the top portion 10f and the wall surface of the liquid metal housing portion 620. As a result, the thermal resistance of the thermal resistance changing member 610 between the top portion 10f and the intermediate side wall 10g and side wall shield 10h becomes relatively low, and heat from the top portion 10f is transferred to the intermediate side wall 10g and side wall shield 10h.

[0124] When a voltage is applied to the field generating electrode 650 of the second assembly 600b, the liquid metal 640 moves away from the field generating electrode 650, contacting the intermediate side wall 10g and the wall surface of the liquid metal housing 620. As a result, the thermal resistance of the thermal resistance changing member 610 between the intermediate side wall 10g and the lower side wall 10i becomes relatively low, and heat from the lower side wall 10i is transferred to the intermediate side wall 10g.

[0125] When a voltage is applied to the field generating electrode 650 of the third assembly 600c, the liquid metal 640 moves away from the field generating electrode 650, contacting the side wall shield 10h and the wall surface of the liquid metal housing 620. As a result, the thermal resistance of the thermal resistance changing member 610 between the side wall shield 10h and the baffle plate 10j becomes relatively low, and heat from the side wall shield 10h is transferred to the baffle plate 10j.

[0126] Since no voltage is applied to the field generating electrode 650 of the fourth assembly 600d, the liquid metal 640 separates from the baffle plate 10j due to gravity. As a result, the thermal resistance of the thermal resistance changing member 610 between the baffle plate 10j and the base portion 10k becomes relatively high, suppressing heat transfer between the baffle plate 10j and the base portion 10k.

[0127] As shown in Figure 21, when the temperature of the intermediate side wall 10g and side wall shield 10h of the chamber 10 is increased, but the temperature of the baffle plate 10j is not increased, a voltage is applied to the field generating electrodes 650 of the first assembly 600a and the second assembly 600b (ON state), and no voltage is applied to the field generating electrode 650 of the third assembly 600c (OFF state). As a result, the thermal resistance of the thermal resistance changing member 610 between the intermediate side wall 10g and the lower side wall 10i becomes relatively low, and heat from the lower side wall 10i is transferred to the intermediate side wall 10g. Also, the thermal resistance of the thermal resistance changing member 610 between the top part 10f and the intermediate side wall 10g and side wall shield 10h becomes relatively low, and heat from the top part 10f is transferred to the intermediate side wall 10g and side wall shield 10h. The thermal resistance of the thermal resistance changing member 610 between the side wall shield 10h and the baffle plate 10j becomes relatively high, suppressing the transfer of heat from the side wall shield 10h to the baffle plate 10j.

[0128] As shown in Figure 22, when the temperature of the baffle plate 10j of the chamber 10 is lowered, a voltage is applied to the field generating electrode 650 of the fourth assembly 600d (ON state), and no voltage is applied to the field generating electrode 650 of the third assembly 600c (OFF state). Also, no voltage is applied to the field generating electrode 650 of the first assembly 600a and the field generating electrode 650 of the second assembly 600b (OFF state). When a voltage is applied to the field generating electrode 650 of the fourth assembly 600d, the liquid metal 640 moves away from the field generating electrode 650, contacting the baffle plate 10j and the wall surface of the liquid metal housing 620. As a result, the thermal resistance of the thermal resistance changing member 610 between the base portion 10k and the baffle plate 10j becomes relatively low, heat from the baffle plate 10j is transferred to the base portion 10k, and the baffle plate 10j is cooled. Furthermore, since no voltage is applied to the field generating electrode 650 of the third assembly 600c, the thermal resistance of the thermal resistance changing member 610 between the side wall shield 10h and the baffle plate 10j becomes relatively high, suppressing the transfer of heat from the side wall shield 10h to the baffle plate 10j. In this case, however, voltage may be applied to the field generating electrode 650 of the first assembly 600a and the field generating electrode 650 of the second assembly 600b.

[0129] As shown in Figure 23, when lowering the temperature of the baffle plate 10j and the side wall shield 10h of the chamber 10, a voltage is applied to the field generating electrodes 650 of the third assembly 600c and the fourth assembly 600d (ON state), and no voltage is applied to the field generating electrodes 650 of the first assembly 600a and the second assembly 600b (OFF state). As a result, the thermal resistance of the thermal resistance changing member 610 between the base portion 10k and the baffle plate 10j, and the thermal resistance changing member 610 between the side wall shield 10h and the baffle plate 10j become relatively low, and the heat from the side wall shield 10h and the baffle plate 10j is transferred to the base portion 10k, cooling the side wall shield 10h and the baffle plate 10j. Furthermore, since no voltage is applied to the field generating electrode 650 of the first assembly 600a, the thermal resistance of the thermal resistance changing member 610 between the top portion 10f and the side wall shield 10h becomes relatively high, and the transfer of heat from the top portion 10f to the side wall shield 10h is suppressed.

[0130] In one embodiment, the plasma processing apparatus 1 has another assembly 700. Figure 24 is a diagram illustrating an example of the configuration of the assembly 700. The assembly 700 is an upper assembly located on top of the chamber 10. The assembly 700 comprises a top plate 710, a cooling plate 711, and a liquid metal drive unit 712. The top plate 710 is an example of a thermal resistance changing member. The cooling plate 711 is an example of an upper member.

[0131] The cooling plate 711 has a cylindrical shape. The cooling plate 711 may be made of metal, metal matrix composite (MMC), or ceramic.

[0132] The cooling plate 711 has a flow path 711a through which a temperature-controlled medium flows. The flow path 711a is located inside the cooling plate 711. The flow path 711a is connected to a medium supply unit 721 located outside the chamber 10 via a connecting flow path 720. The cooling plate 711 is configured to cool the top plate 710 by discharging the heat input from the top plate 710 side through the temperature-controlled medium flowing through the flow path 711a. The temperature-controlled medium may be a gas or a liquid.

[0133] The top plate 710 is positioned below the cooling plate 711. The top plate 710 has a roughly cylindrical shape. The upper surface of the top plate 710 is in contact with the lower surface 711b of the cooling plate 711. The lower surface of the top plate 710 is exposed to the plasma processing space 10s.

[0134] The top plate 710 includes a plurality of liquid metal storage sections (liquid metal storage spaces) 800. Figure 25 is a diagram illustrating an example of the configuration of the top plate 710 as seen from above. Figure 26 is an enlarged view illustrating an example of the configuration of a liquid metal storage section 800. As shown in Figure 25, the plurality of liquid metal storage sections 800 may be evenly arranged within the plane of the main body 710a of the top plate 710. Each of the plurality of liquid metal storage sections 800 has a bottomed concave shape. Each of the plurality of liquid metal storage sections 800 has a columnar shape (polygonal or circular shape in plan view). In one embodiment, each of the plurality of liquid metal storage sections 800 has a hexagonal prism shape (hexagonal shape in plan view). Each of the plurality of liquid metal storage sections 800 may have the same shape and size. The main body 710a of the top plate 710 has a plurality of hexagonal prism-shaped side wall surfaces 810 that define each liquid metal storage section 800. The main body 710a of the top plate 710 may have a honeycomb structure having a plurality of side wall surfaces 810. The side wall structure constituting the side wall surface 810 may be constructed separately from the main body 710a. The side wall structure may be made of resin. As shown in Figure 26, each of the liquid metal containment sections 800 may be defined by the side wall surface 810, the bottom wall surface 811, and the lower surface 711b of the cooling plate 711.

[0135] Each of the multiple liquid metal containments 800 contains a liquid metal 820. The liquid metal 820 has a volume smaller than the volume within each liquid metal containment 800. The remaining portion of each liquid metal containment 800 contains a gas 821, and the liquid metal 820 is movable within the liquid metal containment 800. The liquid metal 820 may be, for example, GaInSn or mercury. The thermal conductivity of the liquid metal 820 may be greater than that of the body 710a of the top plate 710. The thermal conductivity of the liquid metal 820 may be less than that of the body 710a. The body 710a of the top plate 710 may be made of a dielectric material such as ceramics. In one embodiment, the body 710a of the top plate 710 may be made of a material with lower thermal conductivity than the material of the cooling plate 711. In one embodiment, the main body 710a of the top plate 710 may be made of a material with higher thermal conductivity than the material of the cooling plate 711.

[0136] The liquid metal drive unit 712 is configured to move the liquid metal 820 within the liquid metal containment unit 800. As shown in Figure 24, the liquid metal drive unit 712 has a plurality of field generating electrodes 850 and a circuit board 851.

[0137] As shown in Figures 24 and 25, each of the multiple field generating electrodes 850 is positioned in each liquid metal housing 800. Each field generating electrode 850 may have a vertically elongated (cylindrical) columnar shape. Each field generating electrode 850 is positioned in the center of the corresponding liquid metal housing 800. As shown in Figure 24, each field generating electrode 850 extends from within the liquid metal housing 800 through the cooling plate 711 and above the cooling plate 711. Each field generating electrode 850 passes through a through hole 855 formed in the cooling plate 711. As shown in Figure 26, a sealing member 856 is positioned between the outer surface of each field generating electrode 850 and the wall surface of the through hole 855 to prevent leakage of the liquid metal 820. The portions exposed to the liquid metal 820, such as the side walls 810 and bottom wall 811 of the liquid metal containment section 800, the lower surface 711b of the cooling plate 711, and the surface of the field generating electrode 850, are covered with an insulated film. The insulated film may be formed by thermal spraying. The insulated film may be a part of the lower surface 711b of the cooling plate 711. The top plate 710 and the cooling plate 711 may be electrically connected to the ground potential.

[0138] As shown in Figure 24, each field generating electrode 850 is electrically connected to the circuit board 851. The circuit board 851 is electrically connected to the power supply 860. Power supplied from the power supply 860 enables the circuit board 851 to apply a voltage to each field generating electrode 850. The circuit board 851 may be able to individually adjust the voltage applied to each of the multiple field generating electrodes 850.

[0139] The liquid metal drive unit 712 is configured to move the liquid metal 820 by applying a voltage to the field generating electrode 850 and forming an electric field in the liquid metal containment unit 800.

[0140] In one embodiment, as shown in Figure 26, when no voltage is applied to the field generating electrode 850 (OFF state), no electric field is generated in the liquid metal containment section 800, and the liquid metal 820 is positioned at the bottom of the liquid metal containment section 800 due to gravity. At this time, the gas 821 is positioned at the top of the liquid metal containment section 800. In this state, the liquid metal 820 and the cooling plate 711 do not come into contact in the liquid metal containment section 800 of the top plate 710, resulting in a state where the thermal resistance of the top plate 710 to the heat transferred from the plasma processing space 10s to the cooling plate 711 is relatively high (relatively low thermal conductivity).

[0141] As shown in Figure 27, when a voltage is applied to the field generating electrode 850 (ON state), an electric field is generated in the liquid metal containment section 800, and the liquid metal 820 moves, for example, in the direction away from the field generating electrode 850 where the potential is lower, and moves around the wall surface of the liquid metal containment section 800. The gas 821 moves closer to the field generating electrode 850. In one embodiment, the liquid metal 820 contacts the cooling plate 711 while also contacting the wall surface of the liquid metal containment section 800. As a result, the contact area between the liquid metal 820 and the cooling plate 711 in the liquid metal containment section 800 of the top plate 710 becomes larger, and the thermal resistance of the top plate 710 to the heat transferred from the plasma processing space 10s to the cooling plate 711 becomes relatively low (relatively high thermal conductivity).

[0142] As shown in Figure 24, the gas introduction section may be configured to introduce the processing gas from the gas supply section 20 into the plasma processing space 10s through a gas passage 880 formed in the center of the top plate 710 and the cooling plate 711. The top plate 710 is fixed to the cooling plate 711 by screws 890. The screws 890 may be positioned on the outside of the multiple liquid metal containment sections 800 of the top plate 710 and between the multiple liquid metal containment sections 800 and the gas passage 880. An annular sealing member 900 is positioned between the top plate 710 and the cooling plate 711 to prevent leakage of the liquid metal 820. The annular sealing member 900 may be positioned on the outside of the multiple liquid metal containment sections 800 of the top plate 710 and between the multiple liquid metal containment sections 800 and the gas passage 880.

[0143] Each of the multiple liquid metal containment sections 800 and field generating electrodes 850 may have the same configuration as the multiple liquid metal containment sections 400 and field generating electrodes 450 in the first embodiment. For example, each of the multiple liquid metal containment sections 800 and field generating electrodes 850 may have the same configuration as the multiple liquid metal containment sections 400 and field generating electrodes 450 in Figures 11 to 14.

[0144] Assembly 700 may include the shower head 13. Assembly 700 may include the upper electrode.

[0145] Assembly 700 may be applied to an inductively coupled plasma processing apparatus 1. In this case, the top plate 710 may be a dielectric window. An antenna may be positioned above the top plate 710. The antenna may be connected to a power supply and configured to receive a source RF signal (source RF power) from the power supply to generate plasma in the plasma processing space 10s.

[0146] Embodiments of this disclosure further include the following embodiments:

[0147] (Note 1) A substrate support base comprising: an upper member having a substrate support surface; a base; an intermediate member disposed between the upper member and the base, the intermediate member including a liquid metal housing portion configured to movably house liquid metal; and a liquid metal drive unit configured to move the liquid metal within the liquid metal housing portion.

[0148] (Note 2) The substrate support base according to Note 1, wherein the liquid metal drive unit is configured to move the liquid metal by an electric field.

[0149] (Note 3) The substrate support base according to Note 2, wherein the liquid metal drive unit has an electric field generating electrode configured to generate an electric field in the liquid metal containment unit.

[0150] (Note 4) The electric field generating electrode is a substrate support base as described in Note 3, which is arranged within the intermediate member.

[0151] (Note 5) The electric field generating electrode is a substrate support base as described in Note 3, which is placed within the liquid metal housing.

[0152] (Note 6) The electric field generating electrode is a substrate support base as described in Note 3, which is arranged within the upper member.

[0153] (Note 7) The upper member is a substrate support base as described in any one of Notes 3 to 6, which is electrically connected to the ground potential.

[0154] (Note 8) The base is a substrate support base according to any one of Notes 3 to 7, electrically connected to the ground potential.

[0155] (Note 9) The intermediate member is the substrate support base according to Note 3, which includes a plurality of liquid metal housings.

[0156] (Note 10) The substrate support base according to Note 9, wherein the liquid metal drive unit comprises a plurality of electric field generating electrodes, and each of the plurality of electric field generating electrodes is arranged in each of the plurality of liquid metal housing units.

[0157] (Note 11) The substrate support base according to Note 9 or 10, wherein each of the plurality of liquid metal containment sections has the same shape.

[0158] (Note 12) Each of the plurality of liquid metal containment portions has a columnar shape, and is a substrate support base portion according to any one of Notes 9 to 11.

[0159] (Note 13) A substrate support base according to any one of Notes 10 to 12, wherein each of the plurality of field generating electrodes has a columnar shape.

[0160] (Note 14) The substrate support base according to Note 10, wherein each of the plurality of liquid metal housings has a circular or arc shape in plan view, with the center of the intermediate member as its center.

[0161] (Note 15) The substrate support base according to Note 14, wherein each of the plurality of electric field generating electrodes has an annular shape, an arc shape, or a cross shape in a plan view.

[0162] (Note 16) The base is a substrate support base according to any one of Notes 1 to 15, having a channel through which a temperature-controlled medium flows.

[0163] (Note 17) The upper member is a substrate support base according to any one of Notes 1 to 15, having a heater.

[0164] (Note 18) A substrate processing apparatus comprising: a chamber; a substrate support base disposed within the chamber; and a gas supply unit configured to supply a processing gas into the chamber, wherein the substrate support base comprises: an upper member having a substrate support surface; a base; an intermediate member disposed between the upper member and the base, the intermediate member including a liquid metal housing section configured to movably house liquid metal; and a liquid metal drive unit configured to move the liquid metal within the liquid metal housing section.

[0165] (Note 19) The substrate processing apparatus according to Note 18, further comprising a plasma generation unit configured to generate plasma from the processing gas within the chamber.

[0166] (Appendix 20) The substrate processing apparatus according to Appendix 18 or 19, further comprising a control unit, wherein the control unit is configured to perform (a) moving the liquid metal within the liquid metal housing by the liquid metal drive unit.

[0167] (Note 21) The substrate processing apparatus according to Note 20, wherein (a) includes (a-1) arranging the liquid metal at a first position to make the resistance of the intermediate member to heat from the upper member toward the base a first thermal resistance, and (a-2) arranging the liquid metal at a second position to make the resistance of the intermediate member to heat from the upper member toward the base a second thermal resistance different from the first thermal resistance.

[0168] (Note 22) An assembly used in a substrate processing apparatus, comprising: a thermal resistance changing member including a liquid metal housing portion configured to movably house a liquid metal and a gas; and a liquid metal driving portion configured to move the liquid metal within the liquid metal housing portion.

[0169] (Note 23) The assembly described in Note 22, wherein the liquid metal drive unit is configured to move the liquid metal by an electric field.

[0170] (Note 24) The assembly according to Note 23, wherein the liquid metal drive unit has an electric field generating electrode configured to generate an electric field in the liquid metal containment unit.

[0171] (Note 25) The assembly described in Note 24, wherein the electric field generating electrode is disposed within the thermal resistance changing member.

[0172] (Note 26) The assembly described in Note 25, wherein the field generating electrode is disposed within the liquid metal housing.

[0173] (Note 27) The assembly described in Note 24, wherein the thermal resistance changing member includes a plurality of liquid metal housings.

[0174] (Note 28) The assembly according to Note 27, wherein the liquid metal drive unit comprises a plurality of electric field generating electrodes, and each of the plurality of electric field generating electrodes is disposed in each of the plurality of liquid metal housing units.

[0175] (Note 29) A substrate processing apparatus comprising: a chamber; a substrate support portion disposed within the chamber; and an assembly disposed within the chamber, wherein the assembly includes a thermal resistance changing member including a liquid metal housing portion configured to movably house liquid metal and gas; and a liquid metal drive portion configured to move the liquid metal within the liquid metal housing portion.

[0176] (Note 30) The assembly is the substrate processing apparatus described in Note 29, which is positioned on the side wall of the chamber.

[0177] (Note 31) The substrate processing apparatus described in Note 29, wherein the thermal resistance changing member is disposed between the top and side wall of the chamber.

[0178] (Note 32) The substrate processing apparatus according to Note 29, wherein the thermal resistance changing member is disposed between the lower side wall and the intermediate side wall of the chamber.

[0179] (Note 33) The substrate processing apparatus according to Note 29, wherein the thermal resistance changing member is disposed between the top of the chamber and the side wall shield.

[0180] (Note 34) The substrate processing apparatus according to Note 29, wherein the thermal resistance changing member is disposed between the side wall shield of the chamber and the baffle plate.

[0181] (Note 35) The substrate processing apparatus described in Note 29, wherein the thermal resistance changing member is disposed between the baffle plate and the base portion of the chamber.

[0182] (Note 36) The assembly is the substrate processing apparatus described in Note 29, which is positioned on top of the chamber.

[0183] (Note 37) The substrate processing apparatus according to Note 29, wherein the thermal resistance changing member is a top plate placed below the cooling plate.

[0184] (Note 38) The substrate processing apparatus according to Note 29, comprising a plurality of the assemblies.

[0185] The embodiments described above are for illustrative purposes only and are not intended to limit the scope of this disclosure. The embodiments can be modified in various ways without departing from the scope and spirit of this disclosure. For example, some components of one embodiment can be added to other embodiments, or some components of one embodiment can be replaced with corresponding components of other embodiments.

[0186] 1...Plasma processing apparatus, 10...Chamber, 11...Substrate support section, 200...Intermediate member, 201...Liquid metal drive section, 300...Substrate support surface, 400...Liquid metal containment section, 420...Liquid metal, 421...Gas, 450...Field generating electrode, 451...Circuit board, 1110...Base, 1111...Electrostatic chuck, 1111a...Ceramic member, 1111b...Electrostatic chuck electrode, W...Substrate

Claims

1. A substrate support base comprising: an upper member having a substrate support surface; a base; an intermediate member disposed between the upper member and the base, the intermediate member including a liquid metal housing portion configured to movably house liquid metal; and a liquid metal drive portion configured to move the liquid metal within the liquid metal housing portion.

2. The substrate support stand according to claim 1, wherein the liquid metal drive unit is configured to move the liquid metal by an electric field.

3. The substrate support base according to claim 2, wherein the liquid metal drive unit has an electric field generating electrode configured to generate an electric field in the liquid metal containment unit.

4. The substrate support base according to claim 3, wherein the field generating electrode is disposed within the intermediate member.

5. The substrate support base according to claim 3, wherein the field generating electrode is disposed within the liquid metal containment portion.

6. The substrate support base according to claim 3, wherein the electric field generating electrode is disposed within the upper member.

7. The substrate support base according to claim 3, wherein the upper member is electrically connected to the ground potential.

8. The substrate support base according to claim 3, wherein the base is electrically connected to the ground potential.

9. The substrate support base according to claim 3, wherein the intermediate member includes a plurality of liquid metal housing portions.

10. The substrate support base according to claim 9, wherein the liquid metal drive unit comprises a plurality of electric field generating electrodes, and each of the plurality of electric field generating electrodes is arranged in each of the plurality of liquid metal housing units.

11. The substrate support base according to claim 10, wherein each of the plurality of liquid metal containments has a columnar shape.

12. The substrate support base according to claim 10, wherein each of the plurality of liquid metal containments has the same shape.

13. The substrate support base according to claim 12, wherein each of the plurality of field generating electrodes has a columnar shape.

14. The substrate support base according to claim 10, wherein each of the plurality of liquid metal housings has a circular or arc shape in plan view, with the center of the intermediate member as its center.

15. The substrate support base according to claim 14, wherein each of the plurality of electric field generating electrodes has an annular shape, an arc shape, or a cross shape in a plan view.

16. The substrate support base according to claim 1, wherein the base has a channel through which a temperature-controlled medium flows.

17. The substrate support base according to claim 1, wherein the upper member has a heater.

18. A substrate processing apparatus comprising: a chamber; a substrate support base disposed within the chamber; and a gas supply unit configured to supply a processing gas into the chamber, wherein the substrate support base comprises: an upper member having a substrate support surface; a base; an intermediate member disposed between the upper member and the base, the intermediate member including a liquid metal housing portion configured to movably house liquid metal; and a liquid metal drive unit configured to move the liquid metal within the liquid metal housing portion.

19. The substrate processing apparatus according to claim 18, further comprising a plasma generation unit configured to generate plasma from the processing gas within the chamber.

20. The substrate processing apparatus according to claim 19, further comprising a control unit, wherein the control unit is configured to perform (a) moving the liquid metal within the liquid metal containment unit by the liquid metal drive unit.

21. The substrate processing apparatus according to claim 20, wherein (a) comprises (a-1) arranging the liquid metal at a first position to make the resistance of the intermediate member to heat from the upper member toward the base a first thermal resistance, and (a-2) arranging the liquid metal at a second position to make the resistance of the intermediate member to heat from the upper member toward the base a second thermal resistance different from the first thermal resistance.

22. An assembly used in a substrate processing apparatus, comprising: a thermal resistance changing member including a liquid metal housing portion configured to movably house a liquid metal and a gas; and a liquid metal driving portion configured to move the liquid metal within the liquid metal housing portion.

23. A substrate processing apparatus comprising: a chamber; a substrate support portion disposed within the chamber; and an assembly disposed within the chamber, wherein the assembly includes a thermal resistance changing member including a liquid metal housing portion configured to movably house a liquid metal and a gas; and a liquid metal drive portion configured to move the liquid metal within the liquid metal housing portion.

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