Composition, heat transfer fluid, device for heat transfer, and heat transfer method
Patent Information
- Authority / Receiving Office
- WO · WO
- Patent Type
- Applications
- Current Assignee / Owner
- Filing Date
- 2026-02-03
- Publication Date
- 2026-08-13
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Figure JP2026003820_13082026_PF_FP_ABST
Abstract
Description
Composition, heat transfer fluid, heat transfer apparatus, and heat transfer method
[0001] This disclosure relates to compositions, heat transfer fluids, heat transfer devices, and heat transfer methods.
[0002] A known heat transfer fluid contains a trimer of hexafluoropropene (HFP) represented by the following formulas (I) to (III) (Patent Document 1).
[0003] Because HFP trimers have a low global warming potential (GWP), they are attracting attention as a substitute for chlorofluorocarbons (CFCs) and hydrochlorofluorocarbons (HCFCs).
[0004] Special Publication No. 2020-514420
[0005] To improve the heat transfer efficiency of heat transfer fluids, compositions with relatively high density and relatively low viscosity are required. Furthermore, compositions with relatively high boiling points are required because "a low boiling point of the heat transfer fluid may cause vaporized heat transfer fluid to leak from the device" and "a wide operating temperature range (in other words, a wide liquid phase temperature range) of the heat transfer fluid is preferable."
[0006] The present invention aims to provide a heat transfer fluid with an excellent balance of viscosity, density, and boiling point.
[0007] The Disclosers conducted extensive research to solve the above problems and found that the density of the composition can increase as the content of the compound represented by formula (I) decreases. Furthermore, they found that while a decrease in the content of the compound represented by formula (I) can lead to an increase in the viscosity of the composition, this increase in viscosity can be suppressed as the content of the compound represented by formula (III) decreases relative to the content of the compound represented by formula (II). They also found that the boiling point tends to decrease as the content of the compound represented by formula (I) increases. Through further research, they completed this disclosure.
[0008] In other words, this disclosure includes the following aspects: [1] Formulas (I) to (III) below: A composition containing a hexafluoropropene trimer represented by [formula], wherein the compound represented by the formula (I) is contained less than 85% by mass based on the total amount of the compounds represented by the formulas (I) to (III), and the content of the compound represented by the formula (III) is 1.95 or less in terms of mass ratio with respect to the content of the compound represented by the formula (II). [2] The composition according to item 1, wherein the compound represented by the formula (I) is contained at 0% to 60% by mass based on the total amount of the compounds represented by the formulas (I) to (III). [3] The composition according to item 1 or 2, wherein the compound represented by the formula (I) is contained at 0% to 35% by mass based on the total amount of the compounds represented by the formulas (I) to (III). [4] The composition according to any one of items 1 to 3, wherein the compound represented by the formula (I) is contained at 0% to 30% by mass based on the total amount of the compounds represented by the formulas (I) to (III). [5] The composition according to any one of items 1 to 4, wherein the compound represented by the formula (I) is contained at 0% to 25% by mass based on the total amount of the compounds represented by the formulas (I) to (III). [6] The composition according to any one of items 1 to 5, wherein the content of the compound represented by the formula (III) is 0.40 to 1.95 in terms of mass ratio with respect to the content of the compound represented by the formula (II). [7] The composition according to any one of items 1 to 6, wherein the content of the compound represented by the formula (III) is 0.80 to 1.95 in terms of mass ratio with respect to the content of the compound represented by the formula (II). [8] The composition according to any one of items 1 to 7, wherein the content of the compound represented by the formula (III) is 0.10 to 0.80 in terms of mass ratio with respect to the content of the compound represented by the formula (II). [9] The composition according to any one of items 1 to 8, which is used in a semiconductor manufacturing process.
[10] (i) C 9 , (2n-2) , 18 F 2m and / or C n F (2n-2) [wherein, m is an integer of 4 or more and 12 or less. n is an integer of 4 or more and 12 or less.](Here, the content of such C m F 2m and / or C n F (2n-2) is the content of C 9 F 18(ii) water (where the amount of water is 0.0001 to 10 parts by mass per 100 parts by mass of the total amount of hexafluoropropene trimers represented by C 9 F 18 (0.0001 to 0.1 parts by mass per 100 parts by mass of the total amount of hexafluoropropene trimers represented by ), and / or (iii) fluoride ions (wherein the content of such fluoride ions is C 9 F 18
[11] The composition according to any one of claims 1 to 9, further comprising 0.0000001 to 5 parts by mass (with respect to 100 parts by mass of the total amount of hexafluoropropene trimers represented by ).
[12] The composition according to any one of claims 1 to 11, further comprising a conductive substance, wherein the content of the conductive substance is 100 ppm by mass or less.
[13] The composition according to any one of claims 1 to 12, further comprising a conductive substance, wherein the content of insoluble particles with a particle size of 5 μm or more is 30 particles / mL or less.
[14] The composition according to any one of claims 1 to 13, which is a composition for a heat transfer fluid.
[15] The composition according to any one of claims 1 to 14, which is a substitute for a heat transfer fluid comprising at least one selected from the group consisting of perfluorotripropylamine, perfluoropolyether, and a mixture of methoxytridecafluoroheptene isomers.
[16] A heat transfer fluid comprising the composition according to any one of claims 1 to 14.
[17] The heat transfer fluid according to claim 15, further comprising a stabilizer.
[17] A heat transfer fluid as described in item 15 or 16, used in a semiconductor manufacturing process.
[18] A composition as described in any one of items 1 to 14, or a heat transfer fluid as described in any one of items 15 to 17, for heat transfer.
[19] A heat transfer apparatus comprising a device and a mechanism for transferring heat to or from the device, comprising a composition as described in any one of items 1 to 14, or a heat transfer fluid as described in any one of items 15 to 17.
[20] A heat transfer apparatus as described in item 19, wherein the device is a wafer, microprocessor, power control semiconductor, electrical switch, power transformer, circuit board, multichip module, mounted and unmounted semiconductor device, chemical reactor, nuclear reactor, fuel cell, laser, or missile component used in manufacturing semiconductors.
[21] A semiconductor manufacturing apparatus comprising a heat transfer apparatus as described in item 19 or 20.
[22] A heat transfer method comprising the steps of preparing a device and transferring heat to or from the device using a composition according to any one of items 1 to 14 or a heat transfer fluid according to any one of items 15 to 17.
[23] The heat transfer method according to item 22, wherein the device is a wafer used to manufacture a semiconductor.
[24] Use of the composition described in any one of items 1 to 14 as a substitute for a heat transfer fluid comprising at least one selected from the group consisting of perfluorotripropylamine, perfluoropolyether, and a mixture of methoxytridecafluoroheptene isomers.
[0009] According to this disclosure, it is possible to provide a heat transfer fluid with an excellent balance of viscosity, density, and boiling point.
[0010] In this specification, the numerical range "A to B" is intended to include the lower and upper numerical values themselves. That is, the numerical range "A to B" means A or greater and B or less.
[0011] The compositions of this disclosure are described below.
[0012] (Composition) The compositions of the present disclosure are defined by the following formulas (I) to (III): The compound contains a hexafluoropropene trimer represented by the formula (I), and the compound represented by formula (I) is present in less than 85% by mass of the total amount of the compounds represented by formulas (I) to (III), and the content of the compound represented by formula (III) is 1.95 or less by mass ratio to the content of the compound represented by formula (II).
[0013] The compounds represented by formulas (I) to (III) are so-called hexafluoropropene trimers.
[0014] In this specification, unless otherwise specified, the compound represented by formula (I) above includes both the E and Z isomers of the diastereomer.
[0015] In the compositions of this disclosure, a hexafluoropropene trimer represented by formula (I) to (III) (hereinafter, C 9 F 18 The hexafluoropropene trimer (also known as the hexafluoropropene trimer) is preferably present in an amount of 40% to 99.9% by mass, more preferably 60% to 99.9% by mass, even more preferably 80% to 99.9% by mass, even more preferably 90% to 99.9% by mass, and particularly preferably 95% to 99.9% by mass of the total composition.
[0016] In the compositions of this disclosure, the compound represented by formula (I) is present in an amount less than 85% by mass of the total amount of the compounds represented by formulas (I) to (III), and may be present in amounts of, for example, 70% by mass or less, 60% by mass or less, 50% by mass or less, 40% by mass or less, 35% by mass or less, 30% by mass or less, 25% by mass or less, 20% by mass or less, 15% by mass or less, or 10% by mass or less, preferably 55% by mass or less, more preferably 35% by mass or less, and even more preferably 15% by mass or less. By setting the content of the compound represented by formula (I) within the above range, the density of the composition increases, and thus the amount of thermal energy stored per unit volume improves. As a result, the required flow rate of the heat transfer fluid composition to be circulated decreases, so the size of piping and pumps can be reduced, and consequently the overall design of the equipment can be made more compact. Furthermore, by setting the content of the compound represented by formula (I) within the above range, the boiling point of the composition can be increased because the content of the compound represented by formula (I) is suppressed. Furthermore, by setting the content of the compound represented by formula (I) within the above range, the thermal conductivity is more easily improved, making it easier to reduce pump power.
[0017] In the compositions of this disclosure, the compound represented by formula (I) may be present in an amount of 0% by mass or more, for example, 1% by mass or more, 2% by mass or more, 3% by mass or more, 5% by mass or more, 10% by mass or more, 20% by mass or more, or 30% by mass or more, relative to the total amount of the compounds represented by formulas (I) to (III). In the compositions of this disclosure, the compound represented by formula (I) may be present in an amount of 0% by mass (i.e., not present).
[0018] In the compositions of this disclosure, the compound represented by formula (I) is, for example, 0% by mass or more and less than 85% by mass, 1% by mass or more and less than 85% by mass, 3% by mass or more and less than 85% by mass, 10% by mass or more and less than 85% by mass, 20% by mass or more and less than 85% by mass, 0% by mass or more and 60% by mass or less, 1% by mass or more and 60% by mass or less, 3% by mass or more and 60% by mass or less, 10% by mass or more and 60% by mass or less, 20% by mass or more and 60% by mass or less, 30% by mass or more and 60% by mass or less, 35% by mass or more and 60% by mass or less, 40% by mass or more and 60% by mass or less, 50% by mass or more and 60% by mass or less, 0% by mass or more and 35% by mass or less, 1% by mass or more and 35% by mass or less, 3 10 to 35 mass%, 15 to 35 mass%, 20 to 35 mass%, 25 to 35 mass%, 0 to 25 mass%, 1 to 25 mass%, 3 to 25 mass%, 5 to 25 mass%, 10 to 25 mass%, 15 mass% or more and 25 mass% or less, 20 mass% or more and 25 mass% or less, 0 mass% or more and 15 mass% or less, 0 mass% or more and 5 mass% or less, 1 mass% or more and 15 mass% or less, 1 mass% or more and 5 mass% or less, 3 mass% or more and 15 mass% or less, 3 mass% or more and 5 mass% or less, 5 mass% or more and 15 mass% or less, 10 mass% or more and 15 mass% or less. In the compositions of the present disclosure, the compound represented by formula (I) may be preferably 0% to 55% by mass, more preferably 0% to 35% by mass, even more preferably 0% to 25% by mass, even more preferably 1% to 15% by mass, and particularly preferably 1% to 5% by mass, based on the total amount of the compounds represented by formulas (I) to (III).
[0019] In the compositions of this disclosure, the content of the compound represented by formula (III) is 1.95 or less by mass ratio relative to the content of the compound represented by formula (II), and can be, for example, 1.50 or less, 1.40 or less, 1.20 or less, 1.00 or less, 0.90 or less, 0.80 or less, 0.70 or less, 0.60 or less, 0.50 or less, 0.40 or less, 0.30 or less, or 0.20 or less, preferably 1.00 or less, more preferably 0.80 or less, even more preferably 0.50 or less, and even more preferably 0.30 or less. By setting the content of the compound represented by formula (III) within the above range, the kinematic viscosity of the composition is reduced, so that, for example, when used in semiconductor manufacturing equipment, the pressure required to circulate the composition can be reduced. By reducing the pressure required to circulate the composition, pressure loss can be reduced, leakage from the equipment can be reduced, and operating costs can be lowered.
[0020] In the compositions of this disclosure, the content of the compound represented by formula (III) may be 0 or more by mass ratio relative to the content of the compound represented by formula (II), for example, 0.01 or more, for example, 0.05 or more, for example, 0.10 or more, for example, 0.20 or more, for example, 0.30 or more, for example, 0.50 or more, for example, 0.70 or more, for example, 1.00 or more. In the compositions of this disclosure, the content of the compound represented by formula (III) may be 0 (i.e., no compound represented by formula (III)) relative to the content of the compound represented by formula (II). In the compositions of this disclosure, the content of the compound represented by formula (III) is preferably 0 or more by mass ratio, more preferably 0.10 or more, and even more preferably 0.20 or more, relative to the content of the compound represented by formula (II). The boiling point tends to increase as the ratio of the content of the compound represented by formula (III) to the content of the compound represented by formula (II) (formula (III) / formula (II)) increases. Therefore, by setting the content of the compound represented by formula (III) within the above range, the ratio of the content of the compound represented by formula (III) to the content of the compound represented by formula (II) becomes higher, making it easier to raise the boiling point of the composition.
[0021] In the compositions of this disclosure, the content of the compound represented by formula (III) is 0 to 1.95, 0 to 1.50, 0 to 1.00, 0 to 0.80, 0 to 0.60, 0.01 to 1.95, 0.01 to 1.50, 0.01 to 1.00, 0.01 to 0.80, 0.01 to 0.60, 0.10 to 1.95, and 0.10 to 1. The amounts may be 50, 0.10-1.00, 0.10-0.80, 0.10-0.60, 0.20-1.50, 0.20-1.00, 0.20-0.80, 0.20-0.60, 0.40-1.95, 0.40-1.50, 0.40-1.00, 0.40-0.80, 0.40-0.60, 0.80-1.95, 0.80-1.50, and 0.80-1.00. In the compositions of this disclosure, the content of the compound represented by formula (III) may be preferably 0-1.94, more preferably 0-1.00 or 0.40-1.94, even more preferably 0-0.80, even more preferably 0.10-0.80, and particularly preferably 0.10-0.60, in mass ratio with respect to the content of the compound represented by formula (II).
[0022] The compounds represented by formulas (I) to (III) can be produced by conventional methods, for example, by the methods described in International Publication No. 2018 / 172919, though not limited to these methods. They can also be obtained by trimerization using hexafluoropropene as a starting material by conventional methods.
[0023] The compositions disclosed herein are compounds other than those represented by formulas (I) to (III), C 9 F 18 It may contain a hexafluoropropene trimer represented by .
[0024] The compositions of this disclosure may contain a hexafluoropropene dimer.
[0025] The hexafluoropropene dimer may include (E)-1,1,1,2,3,4,5,5,5-nonafluoro-4-(trifluoromethyl)-2-pentene, (Z)-1,1,1,2,3,4,5,5,5-nonafluoro-4-(trifluoromethyl)-2-pentene, or 1,1,1,3,4,4,5,5,5-nonafluoro-2-(trifluoromethyl)-2-pentene.
[0026] In the compositions of this disclosure, the content of the hexafluoropropene trimer may be 80% by mass or more, preferably 85% by mass or more, more preferably 90% by mass or more, for example, 95% by mass or more, 98% by mass or more, 99% by mass or more, or 99.9% by mass or more, based on the total of the hexafluoropropene trimer and the hexafluoropropene dimer.
[0027] In the compositions of this disclosure, the content of the hexafluoropropene trimer may be preferably 99.999% by mass or less, more preferably 99.99% by mass or less, for example, 99.9% by mass or less, 99% by mass or less, 95% by mass or less, 90% by mass or less, or 85% by mass or less, based on the total of the hexafluoropropene trimer and the hexafluoropropene dimer.
[0028] In the compositions of this disclosure, the content of the hexafluoropropene trimer is preferably 80% by mass or more and 99.999% by mass or less, more preferably 85% by mass or more and 99.99% by mass or less, for example, 90% by mass or more and 99.99% by mass or less, 95% by mass or more and 99.99% by mass or less, 99% by mass or more and 99.99% by mass or less, or 99% by mass or more and 99.9% by mass or less, based on the total of the hexafluoropropene trimer and the hexafluoropropene dimer.
[0029] The total amount of hexafluoropropene trimer and hexafluoropropene dimer in the composition is preferably 80% by mass or more, more preferably 85% by mass or more, even more preferably 90% by mass or more, even more preferably 95% by mass or more, for example, 98% by mass or more, 99% by mass or more, or 99.9% by mass or more. The total amount of hexafluoropropene trimer and hexafluoropropene dimer in the composition may be substantially 100% by mass. In other words, the composition of this disclosure may be a mixture of hexafluoropropene trimer and hexafluoropropene dimer.
[0030] The compositions of this disclosure may contain a hexafluoropropene tetramer.
[0031] The hexafluoropropene tetramer may contain 1,1,1,2,5,6,6,6-octafluoro-2,3,5-tris(trifluoromethyl)-4-(perfluoropropyl-2-yl)-3-hexene.
[0032] In the compositions of this disclosure, the content of the hexafluoropropene trimer may be 80% by mass or more, preferably 85% by mass or more, more preferably 90% by mass or more, for example, 95% by mass or more, 98% by mass or more, 99% by mass or more, or 99.9% by mass or more, based on the total of the hexafluoropropene trimer and the hexafluoropropene tetramer.
[0033] In the compositions of this disclosure, the content of the hexafluoropropene trimer may be preferably 99.999% by mass or less, more preferably 99.99% by mass or less, for example, 99.9% by mass or less, 99% by mass or less, 95% by mass or less, 90% by mass or less, or 85% by mass or less, based on the total of the hexafluoropropene trimer and hexafluoropropene tetramer.
[0034] In the compositions of this disclosure, the content of hexafluoropropene trimers is preferably 80% by mass or more and 99.999% by mass or less, more preferably 85% by mass or more and 99.99% by mass or less, for example, 90% by mass or more and 99.99% by mass or less, 95% by mass or more and 99.99% by mass or less, 99% by mass or more and 99.99% by mass or less, or 99% by mass or more and 99.9% by mass or less, based on the total of the hexafluoropropene trimers and hexafluoropropene tetramers.
[0035] The total amount of hexafluoropropene trimer and hexafluoropropene tetramer in the composition is preferably 80% by mass or more, more preferably 85% by mass or more, even more preferably 90% by mass or more, even more preferably 95% by mass or more, for example, 98% by mass or more, 99% by mass or more, or 99.9% by mass or more. The total amount of hexafluoropropene trimer and hexafluoropropene tetramer in the composition may be substantially 100% by mass. In other words, the composition of this disclosure may be a mixture of hexafluoropropene trimer and hexafluoropropene tetramer.
[0036] The composition disclosed herein includes a hexafluoropropene trimer, in addition to C m F 2m and / or C n F (2n-2) The formula may include: [wherein m is an integer between 4 and 12, and n is an integer between 4 and 12.]
[0037] m is an integer greater than or equal to 4, preferably an integer greater than or equal to 5, and more preferably an integer greater than or equal to 7. Also, n is an integer less than or equal to 12, preferably an integer less than or equal to 11, and more preferably an integer less than or equal to 10.
[0038] n is an integer greater than or equal to 4, preferably greater than or equal to 5, and more preferably greater than or equal to 6. Also, n is an integer less than or equal to 12, preferably less than or equal to 11, and more preferably less than or equal to 10. Furthermore, n is particularly preferably 9.
[0039] C m F 2mThis may be a linear compound or a cyclic compound that may have a substitutional structure. The linear compound may be a so-called alkene, and may be linear or branched.
[0040] C n F (2n-2) This may be a linear compound or a cyclic compound that may have a substitutional structure. The linear compound may be a so-called diene or an alkyne, and may be linear or branched.
[0041] C m F 2m and / or C n F (2n-2) Specific examples of compounds represented by include decafluorocyclohexene, perfluoro-1,3-dimethylcyclohexane, perfluorododecene, perfluoro-1,3-diisopropylcyclohexane, 1,1,1,4,4,5,5,6,7,8,8,8-dodecafluoro-2,3,6,7-tetrakis(trifluoromethyl)-2-octene, perfluoro(1,2-dipropylcyclohexene), perfluoro-2,5-dimethyl-3-ethyl-2,4-octadiene, and the like.
[0042] In the compositions disclosed herein, C m F 2m and / or C n F (2n-2) By coexisting with a hexafluoropropene trimer, its function as a heat transfer fluid is improved. Furthermore, the composition of this disclosure is C m F 2m and / or C n F (2n-2) The inclusion of this improves the stability of the hexafluoropropene trimer.
[0043] C m F 2m and / or C n F (2n-2) The content of C in the composition of this disclosure may be preferably 10% by mass or less, more preferably 5% by mass or less, and even more preferably 1% by mass or less, relative to the hexafluoropropene trimer. m F 2m and / or Cn F (2n-2) The content of is preferably 0.0001% by mass or more, more preferably 0.001% by mass or more, relative to the hexafluoropropene trimer in the composition of this disclosure. m F 2m and / or C n F (2n-2) These are not essential components in the compositions of this disclosure and may not be included.
[0044] The compositions of this disclosure may contain perfluorotripropylamine in addition to the hexafluoropropene trimer. Compositions containing the hexafluoropropene trimer and perfluorotripropylamine may be pseudoazeotropic liquids. Being a pseudoazeotropic liquid allows for minimal change in composition even when the composition vaporizes, making it easy to handle.
[0045] Here, a pseudoazeotropic liquid refers to a liquid in which the difference in mole fractions between the gas phase and the liquid phase of each component contained in the pseudoazeotropic liquid is 10% or less.
[0046] Perfluorotripropylamine is also called tris(heptafluoropropyl)amine or N,N-bis(heptafluoropropyl)(heptafluoropropyl)amine, and its general formula is N(CF 2 CF 2 CF 3 ) a (CF(CF 3 ) CF 3 ) 3-a (where a is an integer from 0 to 3) Perfluorotripropylamine may contain only one compound from the above general formula, or it may contain multiple compounds. N(CF 2 CF 2 CF 3 ) 3 Preferably, N(CF) is used as an impurity. 2 CF 2 CF 3 ) a (CF(CF 3 ) CF 3 ) 3-aIt may contain (a is an integer from 0 to 2). Specifically, product names such as "Florinate (Registered Trademark)" (manufactured by 3M) (FC-3283), etc. can be mentioned.
[0047] The composition of the present disclosure may further contain perfluoropolyether, and a mixture of methoxytridecafluoroheptene isomers, perfluorotributylamine, etc.
[0048] The perfluoropolyether preferably has the general formula: RO-Rf 1 -R', where R and R' are the same or different and are monovalent groups represented by -C m F 2m+1 Here, m is an integer from 1 to 8, and Rf 1 is a divalent fluoropolyoxyalkylene group containing 2 to 20 repeating units, and the repeating units are: (i) -CFXO- (where X is F or CF 3 ); (ii) -CF 2 CFXO- (where X is F or CF 3 ); (iii) -CFXCFO- (where X is F or CF 2 ); (iv) -CF 3 CF 2 CF 2 CF 2 O-; or (v) -CF 2 CF 2 CF 2 CF 2 O-, or Rf 1 is (vi) -(CF 2 ) n -CFY-O- (where n is an integer from 0 to 3, and Y is a monovalent group represented by the general formula -ORf 2 Z, where Rf 2 is -CFXO-, -CF 2 CFXO-, -CF 2 CF 2 CF 2 O-, or -CF 2 CF 2 CF 2 CF 2A divalent fluoropolyoxyalkylene group represented by O-, containing 2 to 20 repeating units, where each X is the same or different, F or CF 3 And Z is a monovalent C 1-5 It is a divalent group represented as a perfluoroalkyl group.
[0049] Examples of perfluoropolyethers include the product names GALDEN® "HT135" and GALDEN® "HT110" (both manufactured by Solvay).
[0050] Methoxytridecafluoroheptene isomer mixtures specifically include methyl-perfluoroheptene ether (MPHE) (C 7 F 13 OCH 3 This includes products such as "Opteon SF10" (manufactured by Chemours).
[0051] If the composition disclosed herein includes perfluorotripropylamine, perfluoropolyether, and a mixture of methoxytridecafluoroheptene isomers, then these and C 9 F 18 Since the hexafluoropropene trimer represented by has similar properties as a heat transfer fluid, the properties of the entire composition as a heat transfer fluid remain basically unchanged regardless of the proportion of these components. Therefore, in this case, the composition of the present disclosure is defined as having C in relation to the entire composition. 9 F 18 It is preferable to contain 40% to 99.9% by mass of the hexafluoropropene trimer represented by , more preferably 60% to 99.9% by mass, even more preferably 80% to 99.9% by mass, even more preferably 90% to 99.9% by mass, and particularly preferably 95% to 99.9% by mass.
[0052] The compositions of this disclosure may further contain water. The water content is preferably 1 ppm by mass or more, and preferably 5 ppm by mass or more. By setting the water content above a certain level, for example 1 ppm by mass or more, the static charge of the composition due to a decrease in the stability of the composition can be suppressed. Furthermore, the water content is preferably 1,000 ppm by mass or less, preferably 500 ppm by mass or less, and more preferably 100 ppm by mass or less. By setting the water content below a certain level, for example 1,000 ppm by mass or less, the C20 charge during heating can be suppressed. 9 F 18 This can suppress the decomposition of the HFP trimer represented by [formula], and consequently, it can suppress the increase in fluoride ions and the rise in acidity.
[0053] In one embodiment, the water content is C 9 F 18 It is preferable that the amount is 0.0001 parts by mass or more, more preferably 0.01 parts by mass or more, and even more preferably 0.1 parts by mass or more, based on a total of 100 parts by mass of the hexafluoropropene trimer represented by .
[0054] On the other hand, the water content is C 9 F 18 It is preferably 1 part by mass or less, more preferably 0.1 parts by mass or less, and even more preferably 0.01 parts by mass or less, per 100 parts by mass of the total hexafluoropropene trimer represented by .
[0055] The compositions of this disclosure may further contain fluoride ions. The amount of fluoride ions in the composition is as follows: 9 F 18 It is preferable that the amount is 0.0000001 parts by mass or more, more preferably 0.000001 parts by mass or more, even more preferably 0.0001 parts by mass or more, and particularly preferably 0.001 parts by mass or more, based on a total of 100 parts by mass of the hexafluoropropene trimer represented by .
[0056] Furthermore, the amount of fluoride ions contained in the composition of this disclosure is C 9 F 18It is preferable that the amount is 5 parts by mass or less, more preferably 1 part by mass or less, even more preferably 0.1 parts by mass or less, and particularly preferably 0.01 parts by mass or less, based on a total of 100 parts by mass of the hexafluoropropene trimer represented by .
[0057] Any known fluoride ion source can be widely used as the fluoride ion source, and there are no particular limitations. Specifically, examples include hydrogen fluoride, sodium fluoride, sodium hydrogen fluoride, potassium fluoride, potassium hydrogen fluoride, lithium fluoride, cesium fluoride, calcium fluoride, magnesium fluoride, aluminum fluoride, zinc fluoride, silver fluoride, and iron fluoride. Only one of these may be included, or multiple types may be included. Preferably, the fluoride ion source is hydrogen fluoride.
[0058] The compositions disclosed herein are preferably compositions for heat transfer fluids.
[0059] (Heat Transfer Fluid) The heat transfer fluid of the Disclosure may include other components in addition to the composition of the Disclosure. In one embodiment, the composition itself may be the heat transfer fluid. In another embodiment, the composition includes other components.
[0060] The amount of the composition contained in the heat transfer fluid of this disclosure may be 10% by mass or more, 30% by mass or more, 50% by mass or more, 60% by mass or more, 70% by mass or more, 80% by mass or more, 90% by mass or more, 95% by mass or more, or 99% by mass or more, relative to the total heat transfer fluid, preferably 60% by mass or more, more preferably 80% by mass or more, even more preferably 90% by mass or more, and particularly preferably 95% by mass or more. Furthermore, it is preferable that the amount of the composition contained in the heat transfer fluid of this disclosure is 99.9999% by mass or less, relative to the total heat transfer fluid.
[0061] Other components included in the heat transfer fluid of this disclosure, other than the composition, may be any components that do not impede the effects and purposes of this disclosure. Examples of such other components include water, stabilizers, and the like.
[0062] Stabilizers exert their functions as so-called acid acceptors or antioxidants by exhibiting stabilizing effects. Major stabilizing effects include preventing the decomposition of hexafluoropropene trimers by capturing radicals generated in the system, and preventing further decomposition of hexafluoropropene trimers by capturing acids generated in the system.
[0063] A wide range of known stabilizers can be used as such stabilizers. In particular, it is preferable to use one or more stabilizers selected from the group consisting of unsaturated alcohol-based stabilizers, nitro-based stabilizers, amine-based stabilizers, phenol-based stabilizers, and epoxy-based stabilizers, as these can effectively suppress the occurrence of metal corrosion caused by the composition.
[0064] A wide range of known unsaturated alcohol-based stabilizers can be used. For example, one or more selected from the group consisting of 3-buten-2-ol, 2-buten-1-ol, 4-propen-1-ol, 1-propen-3-ol, 2-methyl-3-buten-2-ol, 3-methyl-3-buten-2-ol, 3-methyl-2-buten-1-ol, 2-hexen-1-ol, 2,4-hexadiene-1-ol, and oleyl alcohol can be used.
[0065] As nitro-based stabilizers, a wide range of known substances can be used. Examples of aliphatic nitro compounds include nitromethane, nitroethane, 1-nitropropane, and 2-nitropropane. As aromatic nitro compounds, one or more selected from the group consisting of nitrobenzene, o-, m-, or p-dinitrobenzene, o-, m-, or p-nitrotoluene, dimethylnitrobenzene, m-nitroacetophenone, o-, m-, or p-nitrophenol, o-nitroanisole, m-nitroanisole, and p-nitroanisole can be used.
[0066] A wide range of known amine-based stabilizers can be used. For example, one or more selected from the group consisting of pentylamine, hexylamine, diisopropylamine, diisobutylamine, di-n-propylamine, diallylamine, triethylamine, N-methylaniline, pyridine, morpholine, N-methylmorpholine, triallylamine, allylamine, α-methylbenzylamine, dimethylamine, trimethylamine, ethylamine, diethylamine, triethylamine, propylamine, isopropylamine, dipropylamine, tripropylamine, butylamine, isobutylamine, dibutylamine, tributylamine, dibentilamine, tribentilamine, 2-ethylhexylamine, aniline, N,N-dimethylaniline, N,N-diethylaniline, ethylenediamine, propylenediamine, diethylenetriamine, tetraethylenepentamine, benzylamine, dibenzylamine, diphenylamine, and diethylhydroxylamine can be used.
[0067] A wide range of known phenolic stabilizers can be used. For example, one or more selected from the group consisting of 2,6-ditterybutyl-4-methylphenol, 3-cresol, phenol, 1,2-benzenediol, 2-isopropyl-5-methylphenol, and 2-methoxyphenol can be used.
[0068] A wide range of known epoxy stabilizers can be used. For example, one or more selected from the group consisting of butylene oxide, 1,2-propylene oxide, 1,2-butylene oxide, butyl glycidyl ether, diethylene glycol diglycidyl ether, and 1,2-epoxy-3-phenoxypropane can be used.
[0069] It is preferable to use a combination of stabilizers having different stabilizing effects to more effectively prevent the decomposition of the hexafluoropropene trimer, which can occur due to various causes, by using the epoxy-based stabilizers mentioned above, as well as one or more stabilizers selected from the group consisting of unsaturated alcohol-based stabilizers, nitro-based stabilizers, and phenol-based stabilizers.
[0070] From the viewpoint of effectively suppressing acid release from the hexafluoropropene trimer and inhibiting metal corrosion by the liquid composition, the stabilizer content in the total heat transfer fluid is preferably 0.0001% by mass or more, and more preferably 0.01% by mass or more. On the other hand, considering the need to avoid undesirable changes in the physical properties of the heat transfer fluid due to excessive addition of stabilizers, the stabilizer content in the total heat transfer fluid is preferably 10% by mass or less, and more preferably 5% by mass or less.
[0071] C 9 F 18 A composition containing a hexafluoropropene trimer represented by may contain conductive materials (metals, metal ions, carbon, conductive polymers, superconducting ceramics, etc.). These conductive materials include not only those introduced during the manufacturing process of the composition, but also those introduced afterward during use. When these compositions are used to transfer heat to or from a device, the conductive materials may penetrate through gaps in the device, potentially causing a short circuit. Furthermore, repeated use of the composition may cause blockage of the piping through which the composition circulates. The composition contains conductive materials, hence it is classified as "C 9 F 18 It can also be written as "a composition containing a hexafluoropropene trimer represented by [formula] and a conductive substance."
[0072] The compositions of this disclosure may contain conductive materials. The content of conductive materials is 100 ppm by mass or less, preferably 75 ppm by mass or less, more preferably 50 ppm by mass or less, and even more preferably 10 ppm by mass or less. Since metals and metal ions, in particular, can cause short circuits by penetrating through gaps in the device, the content of conductive materials in this disclosure may also be considered by focusing on "at least one of metals and metal ions" as needed.
[0073] [Conductive material] Examples of conductive materials include at least one selected from the group consisting of metals, metal ions, metal oxides, metal nitrides, carbon, conductive polymers, and superconducting ceramics. When a composition containing a conductive material is used in a device, the conductive material may penetrate through gaps in the device, potentially causing a short circuit. Furthermore, when the composition of this disclosure is used repeatedly, C 9 F 18 This can cause blockage in the piping that circulates the hexafluoropropene trimer represented by C. 9 F 18 To improve the performance of the hexafluoropropene trimer represented by [formula], it is important to reduce the content of these conductive materials. The shape and size of the conductive materials vary depending on the type of conductive material, but are generally around 0.001 to 10 μm.
[0074] Examples of metal species used as conductive materials in metals, metal ions, metal oxides, and metal nitrides include Al, Ba, Be, Bi, Ca, Co, Cr, Cu, Fe, Ga, K, Li, Mg, Mn, Na, Ni, Pb, Sr, V, and Zn.
[0075] The metal used as a conductive material may be in elemental form or as an alloy. The metal as a conductive material is typically included in the form of fine particles.
[0076] Ions as conductive materials include all possible ionic forms of each metal species. Ions as conductive materials may exist in a dissolved form as ions with any valency, or they may exist as ions within a material, for example, in a coordinated form.
[0077] The metal oxide used as a conductive material may be an oxide of a single metal species, or it may be an oxide of multiple metal species (i.e., a composite oxide).
[0078] The metal nitride used as a conductive material may be a nitride of one type of metal, or it may be a nitride of multiple types of metals (i.e., a composite nitride).
[0079] Carbon black is an example of carbon used as a conductive material.
[0080] Examples of conductive polymers used as conductive materials include polyacetylene and polythiophene.
[0081] The content of conductive material can be measured, for example, using an inductively coupled plasma mass spectrometer (ICPMS).
[0082] Furthermore, the compositions of this disclosure may include insoluble matter, whether or not they are conductive, including solid components such as resin fragments from the container, dust and dirt mixed in from the air.
[0083] The composition of this disclosure preferably contains 30 particles / mL or less, more preferably 15 particles / mL or less, and even more preferably 10 particles / mL or less, of insoluble matter with a particle size of 5 μm or more (including solid matter such as resin fragments from the container, dust and dirt mixed in from the air, regardless of whether it is conductive or not).
[0084] Furthermore, the number of insoluble particles (fine particles) can be measured, for example, using a liquid particle counter.
[0085] (Use of Compositions or Heat Transfer Fluids) The compositions and heat transfer fluids of this disclosure are used to remove heat from or supply heat to various objects to be heated. The objects to be heated in this disclosure are articles, devices, and atmospheres that are cooled, heated, or maintained at a temperature to be controlled. Examples of such objects to be heated include electrical components, mechanical components, and optical components, as well as their processed products and assemblies. Specific examples of objects to be heated in this disclosure, but not limited to, include wafers used to manufacture semiconductor devices, microprocessors, power control semiconductors, electrical branch switches, power transformers, circuit boards, multi-chip modules, mounted and unmounted semiconductor devices, chemical reactors, nuclear reactors, fuel cells, lasers, and missile components.
[0086] The compositions or heat transfer fluids of this disclosure exhibit low pressure loss during circulation and are therefore suitable for applications requiring large amounts of heat transfer. In a preferred embodiment, the compositions or heat transfer fluids of this disclosure are used in semiconductor manufacturing processes. The objects to which heat is transferred in semiconductor manufacturing processes are wafers used to manufacture semiconductor devices.
[0087] The compositions or heat transfer fluids of this disclosure can also be used as two-phase immersion cooling, chiller fluids, and Rankine cycle working fluids.
[0088] The compositions or heat transfer fluids of the present disclosure can be used in equipment designed to transfer heat using them, as a substitute for the heat transfer fluid currently in use in such equipment.
[0089] The compositions of this disclosure can be used as substitute compositions for heat transfer fluids, comprising at least one selected from the group consisting of perfluorotripropylamine, perfluoropolyether, and a mixture of methoxytridecafluoroheptene isomers. The compositions of this disclosure can substitute for the following heat transfer fluids currently in use: Perfluorotripropylamine (or tris(heptafluoropropyl)amine, or N,N-bis(heptafluoropropyl)(heptafluoropropyl)amine) [N(CFF], typified by the product name "Fluorinert®" (manufactured by 3M) (FC-3283) 2 CF 2 CF 3 )n(CF(CF 3 ) CF 3 ) 3-n(n is an integer from 0 to 3)]; Perfluoropolyethers (PFPEs) represented by the product names GALDEN® "HT135" and GALDEN® "HT110" (manufactured by Solvay), or more specifically compounds represented by the above general formula: RO-Rf-R', and more specifically tetrafluoroethylene oxide polymers and hexafluoropropylene oxide; and Methoxytridecafluoroheptene isomer mixtures represented by the product name "Opteon SF10" (manufactured by Chemours), or more specifically methyl-perfluoroheptene ether (MPHE) (C 7 F 13 OCH 3 ).
[0090] In the heat transfer fluid, the substitute composition for the heat transfer fluid, which includes at least one selected from the group consisting of perfluorotripropylamine, perfluoropolyether, and a mixture of methoxytridecafluoroheptene isomers, is preferably present in an amount of 40% to 99.9% by mass, more preferably 60% to 99.9% by mass, even more preferably 80% to 99.9% by mass, even more preferably 90% to 99.9% by mass, and particularly preferably 95% to 99.9% by mass, relative to the total heat transfer fluid.
[0091] The compositions or heat transfer fluids of this disclosure can be used as drop-in, nearly drop-in, or retrofit replacements for heat transfer fluids in use. “Drop-in replacement” means replacement without modification to the equipment. “Nearly drop-in replacement” means replacement with little to no modification to the equipment. “Retrofit replacement” means replacement with minimal (without significant) modification to the equipment. Preferably, the compositions or heat transfer fluids of this disclosure can be used as drop-in or nearly drop-in replacements for the aforementioned heat transfer fluids.
[0092] Whether a drop-in replacement, near-drop-in replacement, or retrofit replacement is possible can be determined by whether all of the following conditions are met: (i) The boiling point of the heat transfer fluid is at least about 80% of the boiling point of the heat transfer fluid before replacement, preferably at least about 85%. (ii) The freezing point of the heat transfer fluid is equal to or less than the freezing point of the heat transfer fluid before replacement. (iii) The kinematic viscosity of the heat transfer fluid is at least about 200% or less of the kinematic viscosity of the heat transfer fluid before replacement, preferably at least about 150% or less. (iv) The heat transfer fluid is compatible with the heat transfer fluid before replacement in any proportion.
[0093] If the boiling point of the composition or heat transfer fluid of this disclosure is low, vaporized heat transfer fluid may leak from the apparatus. Therefore, it is preferable that the boiling point of the composition or heat transfer fluid of this disclosure is relatively high.
[0094] By setting the boiling point of the composition or heat transfer fluid of this disclosure to at least about 80% or more, preferably at least about 85% or more, of the boiling point of the heat transfer fluid before replacement, the occurrence of cavitation and leakage from the device can be suppressed. The upper limit of the boiling point of the heat transfer fluid is not particularly limited, but for example, it may be at least about 130% or less of the boiling point of the heat transfer fluid before replacement.
[0095] By setting the pour point of the composition or heat transfer fluid of this disclosure to be equal to or lower than the pour point of the heat transfer fluid before replacement, it becomes possible to use it at temperatures below the conventional operating temperature, thereby widening the operating temperature range. The upper limit of the pour point of the heat transfer fluid is not particularly limited, but for example, it may be 30°C higher or lower than the pour point of the heat transfer fluid before replacement.
[0096] By setting the kinematic viscosity of the composition or heat transfer fluid of this disclosure to at least about 200%, preferably at least about 150%, of the kinematic viscosity of the heat transfer fluid before replacement, it is possible to suppress an increase in power consumption or reduce power consumption. It is preferable, but not limited to, that the kinematic viscosity be compared at the operating temperature, and for example, it can be compared at any temperature between -20°C and -40°C, specifically at -20°C.
[0097] The composition or heat transfer fluid of this disclosure is compatible with the heat transfer fluid before replacement in any proportion, thereby facilitating replacement operations.
[0098] Furthermore, the compositions or heat transfer fluids of the present disclosure are more suitable for drop-in replacement, nearly drop-in replacement, or retrofit replacement if they satisfy the following conditions: (v) The compositions or heat transfer fluids of the present disclosure have a dielectric constant of 120% or less of the heat transfer fluid before replacement. (vi) The compositions or heat transfer fluids of the present disclosure have a dielectric strength of 90% or more of the heat transfer fluid before replacement. (vii) The compositions or heat transfer fluids of the present disclosure have a specific heat of 90% or more of the heat transfer fluid before replacement. (viii) The compositions or heat transfer fluids of the present disclosure have a thermal conductivity of 90% or more of the heat transfer fluid before replacement.
[0099] The composition or heat transfer fluid of this disclosure can be suitably used as a substitute composition by setting the dielectric constant of the heat transfer fluid before replacement to 120% or less of the dielectric constant of the heat transfer fluid before replacement. The upper limit of the dielectric constant of the heat transfer fluid is not particularly limited, but for example, it may be 80% or more of the dielectric constant of the heat transfer fluid before replacement.
[0100] The composition or heat transfer fluid of this disclosure can be suitably used as a substitute composition by setting its dielectric strength to 90% or more of the dielectric strength of the heat transfer fluid before replacement. The upper limit of the dielectric strength of the heat transfer fluid is not particularly limited, but for example, it may be 120% or less of the dielectric strength of the heat transfer fluid before replacement.
[0101] The composition or heat transfer fluid of this disclosure can be suitably used as a substitute composition by setting its specific heat to 90% or more of the specific heat of the heat transfer fluid before replacement. The upper limit of the specific heat of the heat transfer fluid is not particularly limited, but for example, it may be 120% or less of the specific heat of the heat transfer fluid before replacement.
[0102] The composition or heat transfer fluid of this disclosure can be suitably used as a substitute composition by setting its thermal conductivity to 90% or more of the thermal conductivity of the heat transfer fluid before replacement. The upper limit of the thermal conductivity of the heat transfer fluid is not particularly limited, but for example, it may be 120% or less of the thermal conductivity of the heat transfer fluid before replacement.
[0103] The boiling point of the composition or heat transfer fluid of this disclosure may preferably be 105°C or higher, more preferably 108°C or higher. Furthermore, there is no particular upper limit to the boiling point of the composition or heat transfer fluid of this disclosure, but it may be, for example, 150°C or lower, 130°C or lower, or 120°C or lower.
[0104] The pour point of the compositions or heat transfer fluids of this disclosure may preferably be -80°C or lower, more preferably -100°C or lower, and even more preferably -110°C or lower. The lower limit of the pour point of the compositions or heat transfer fluids of this disclosure is not particularly limited, but may be, for example, -180°C or higher, or -160°C or higher.
[0105] The kinematic viscosity of the compositions or heat transfer fluids of this disclosure at -40°C may be 20 cSt or less, 18 cSt or less, 15 cSt or less, 14 cSt or less, 12 cSt or less, 10 cSt or less, 9.0 cSt or less, 8.0 cSt or less, 7.0 cSt or less, 6.0 cSt or less, 5.0 cSt or less, 4.5 cSt or less, or 4.0 cSt or less, preferably 12 cSt or less, more preferably 10 cSt or less, and even more preferably 8.0 cSt or less. The kinematic viscosity of the compositions of this disclosure at -40°C may also be 1.0 cSt or more, for example, 1.2 cSt or more, 2.0 cSt or more, 2.6 cSt or more, 3.1 cSt or more, or 5.0 cSt or more.
[0106] The density of the composition or heat transfer fluid of this disclosure at -40°C is 1.70 g / cm³. 3 Above, 1.75g / cm 3 Above, 1.80g / cm 3 Above, 1.85g / cm 3 Above, 1.90g / cm 3 Above, 1.92g / cm 3 Above, 1.93g / cm 3 Above, 1.94g / cm 3 Above, 1.95g / cm 3 Above, 1.96g / cm 3 Above, 1.97g / cm 3 Above, 1.98g / cm 3 Above, 1.99g / cm 3 Above, or 2.00 g / cm³ 3 The above is acceptable, preferably 1.90 g / cm³.3 More preferably, 1.93 g / cm³ 3 More preferably, 1.95 g / cm³ 3 That concludes the information. Furthermore, the density of the composition or heat transfer fluid of this disclosure at -40°C is 2.20 g / cm³. 3 Below, 2.10g / cm 3 Below, 2.05g / cm 3 Below, 2.00g / cm 3 Below, 1.98g / cm 3 Below, 1.97g / cm 3 The following, or 1.95 g / cm³ 3 The following are possible:
[0107] The dielectric constant of the composition or heat transfer fluid of this disclosure may preferably be 3.0 or less, more preferably 2.5 or less, and even more preferably 2.0 or less. Furthermore, the lower limit of the dielectric constant of the composition or heat transfer fluid of this disclosure is not particularly limited, but may be, for example, 1.1 or more.
[0108] The dielectric strength of the compositions or heat transfer fluids of this disclosure may preferably be 40 kV or more, more preferably 50 kV or more, and even more preferably 50 kV or more. Furthermore, there is no particular upper limit to the dielectric strength of the compositions or heat transfer fluids of this disclosure, but it may be, for example, 150 kV or less, or 100 kV or less.
[0109] The specific heat of the composition or heat transfer fluid of this disclosure may be preferably 800 J / kg·K or more, more preferably 900 J / kg·K or more, and even more preferably 1000 J / kg·K or more at 30°C. Furthermore, there is no particular upper limit to the specific heat of the composition or heat transfer fluid of this disclosure, but it may be, for example, 2000 J / kg·K or less, or 1500 J / kg·K or less.
[0110] The thermal conductivity of the composition or heat transfer fluid of this disclosure at 25°C is preferably 0.0570 W / (m·K) or higher, more preferably 0.0600 W / (m·K) or higher, even more preferably 0.0620 W / (m·K) or higher, even more preferably 0.0660 W / (m·K) or higher, and particularly preferably 0.0700 W / (m·K) or higher. Alternatively, the thermal conductivity of the composition of this disclosure at 25°C may be 0.0750 W / (m·K) or lower.
[0111] The boiling point of the composition or heat transfer fluid of this disclosure is the temperature at which a peak originating from endothermic heating is observed when the temperature is increased from 25°C at a rate of 5°C / min using DSC (Suggestive Operation Calorimetry).
[0112] The kinematic viscosity and density of the compositions or heat transfer fluids of this disclosure were measured at -40°C using an Anton Paar SVM3001 kinematic viscometer.
[0113] The thermal conductivity of the composition or heat transfer fluid of this disclosure is a value obtained by the transient nanowire method.
[0114] The compatibility of the compositions or heat transfer fluids of this disclosure is determined by whether or not they are compatible when mixed with the solvent in question. Here, compatibility means that when the two are mixed, they become a uniform state, that is, the phases do not separate.
[0115] (Heat transfer device) The disclosure further provides a heat transfer device comprising a device and a mechanism for transferring heat to or from the device, comprising the above-described composition or heat transfer fluid.
[0116] The device may be a component, workpiece, assembly, etc., that is cooled, heated, or maintained at a predetermined temperature or temperature range. Examples of devices include electrical components, mechanical components, and optical components, and preferably wafers used in semiconductor manufacturing, semiconductor elements, computers, server computers, servers including blade servers; disk arrays / storage systems; storage area networks; network-connected storage; storage communication systems; workstations; routers; telecommunications infrastructure / switches; wired, optical, and wireless communication equipment; cell processing equipment; printers; power supplies; displays; optical devices; measurement systems including handheld systems; military electronic equipment; chemical reactors; fuel cells; heat exchangers; electrochemical cells; microprocessors; power control semiconductors; power distribution switch devices; power transformers; circuit boards; multi-chip modules; packaged or unpackaged semiconductor devices; lasers, etc.
[0117] Semiconductor elements are heat-generating elements mounted in devices, such as CPUs, GPUs, and SSDs. These semiconductor elements are composed of single elements such as silicon and germanium, and compound semiconductors such as gallium arsenide (GaAs), gallium phosphide (GaP), indium phosphide (InP), gallium nitride (GaN), and silicon carbide (SiC).
[0118] If the device is a server computer, one or more logic boards are located within its internal space. A logic board contains numerous heat-generating electronic components, including at least one processor such as a CPU or GPU. In addition, other heat-generating components of the computer may be used, such as chipsets; memory, graphics chips, network chips, RAM, power supplies, daughter cards; and storage drives such as solid-state drives and mechanical hard disks.
[0119] A heat transfer device is a device that uses the above-mentioned heat transfer fluid to transfer heat between itself and an object to be heated. Heat is exchanged (transferred) through thermal contact with the object to be heated. For example, removing heat from an object to be heated is called cooling, and supplying heat is called heating. Different mechanisms may be used depending on the case, but a single heat transfer device may perform both cooling and heating.
[0120] There are no particular limitations on the heat transfer devices, and examples include pumps, valves, fluid confinement systems, pressure control systems, coolers, heat exchangers, heat sources, heat sinks, refrigeration systems, active temperature control systems, and passive temperature control systems.
[0121] More specifically, examples of heat transfer devices include temperature-controlled wafer chucks in plasma-enhanced chemical deposition (PECVD) tools, temperature-controlled test heads for die performance testing, temperature-controlled work areas in semiconductor process equipment, thermal shock test bath reservoirs, and constant temperature baths, with the preferred example being the temperature-controlled work area in semiconductor process equipment.
[0122] The object to which heat is transferred and which is in thermal contact with the heat transfer device is the same as described above.
[0123] Furthermore, this disclosure also provides semiconductor manufacturing equipment equipped with the heat transfer device described herein.
[0124] (Heat Transfer Method) This disclosure provides a heat transfer method comprising the steps of preparing a device and transferring heat to or from the device using the above-described composition or heat transfer fluid. Here, heat can be transferred by positioning a heat transfer device in thermal contact with the device. When positioned in thermal contact with the device, the heat transfer device removes heat from the device, supplies heat to the device, or maintains the device at a selected temperature or temperature range. The direction of the heat flow (from or to the device) is determined by the relative temperature difference between the device and the heat transfer device.
[0125] Although the present invention has been described above, the present invention is not limited to the above and can be implemented in various forms without departing from the spirit of the invention.
[0126] The present disclosure will be described below with reference to examples, but the present disclosure is not limited to the following examples.
[0127] Hereafter, "mass %" represents the mass ratio (percentage) of each component to the total mass of the composition.
[0128] (Preparation Example 1) An HFP trimer was obtained based on the method described in Chem Ber (1973), Vol. 106, pp2950-2959. The obtained HFP trimer was purified by distillation to remove impurities such as hexafluoropropene dimers and tetramers. Furthermore, the purified HFP trimer was separated by distillation into compounds represented by formulas (I), (II), and (III).
[0129] The compounds represented by formulas (I), (II), and (III) obtained above were mixed in such proportions as shown in Table 1 or Table 2 to obtain trimer mixtures. In each trimer mixture, compositions in which the total amount of trimers is less than 100% by mass contained impurities or optional components such as hexafluoropropene dimer, hexafluoropropene tetramer, and C. m F 2m and / or C n F (2n-2) It contains fluoride ions, water, conductive substances, etc. Also, in Tables 1 and 2, "Formula (III) / Formula (II)" represents the "mass ratio of the content of the compound represented by Formula (III) to the content of the compound represented by Formula (II)".
[0130] [Measurement and Estimation of Kinematic Viscosity] The density and kinematic viscosity of each trimer mixture at -40°C were measured using an Anton Paar SVM-3001 kinematic viscosity system. Furthermore, the kinematic viscosity of each trimer mixture of the same composition at -40°C was estimated using the method described below.
[0131] The kinematic viscosity of compositions having the following mass % (formula (I) / formula (II) / formula (III)) ratios for compounds represented by formulas (I), (II), and (III) was measured using an Anton Paar SVM-3001 kinematic viscosity system: • Formula (I) rich composition: 100 / 0 / 0 • Formula (II) rich composition: 0 / 100 / 0 • Formula (III) rich composition: 0 / 0 / 100 The kinematic viscosity of the above compositions was measured, and the kinematic viscosity at -40°C for the formula (I) rich, formula (II) rich, and formula (III) rich compositions was determined, respectively. 1 , v 2 , v 3 These values were used to determine the mass percentages of the compounds represented by formulas (I), (II), and (III), respectively. 1 s 2 s 3 The kinematic viscosity v of the composition was estimated using the following formula: v = exp[s] 1 ×ln(v 1 ) + s 2 ×ln(v 2 ) + s 3 ×ln(v 3 )] Note that the measured value of kinematic viscosity v 1 , v 2 , v 3 The results were as follows: v 1 : 4.17cSt v 2 :10.14cSt v 3 : 16.58 cSt
[0132] Table 1 shows the kinematic viscosity of each composition measured or estimated by the above method. In Table 1, the Examples (or Comparative Examples) are estimated data, while the Reference Examples (or Reference Comparative Examples) are actual measured data using the Anton Paar SVM-3001 kinematic viscosity system.
[0133]
[0134] As shown in Table 1, the kinematic viscosity of the compositions of this disclosure can be estimated with near accuracy using the above estimation method. Having confirmed the accuracy of the above estimation method, the kinematic viscosity of the compositions of this disclosure was further estimated for various compositions. The results are shown in Table 2. All kinematic viscosity values listed in Table 2 are values obtained using the above estimation method.
[0135] [Density Measurement] The density of compositions whose mass % (formula (I) / formula (II) / formula (III)) of compounds represented by formulas (I), (II), and (III) are as shown in Table 2 was measured using an Anton Paar SVM-3001 kinematic viscosity system. The results are shown in Table 2.
[0136] [Measurement of Boiling Point] The boiling point of compositions whose mass % (formula (I) / formula (II) / formula (III)) of compounds represented by formulas (I), (II), and (III) are as shown in Table 2 was measured by the following method. Using DSC (Suggestive Operation Calorimetry), the temperature at which a peak originating from endothermic heating was observed when the temperature was increased from 25°C at 5°C / min was measured. This temperature was taken as the boiling point of the composition. The results are shown in Table 2.
[0137] [Measurement of Thermal Conductivity] The thermal conductivity at 25°C was measured by the transient nanowire method for compositions whose mass % (formula (I) / formula (II) / formula (III)) of compounds represented by formulas (I), (II), and (III) are as shown in Table 2. The results are shown in Table 2. In Table 2, if "-" is written in the "Thermal Conductivity [mW / (m·K)]" column, it means that the measurement was not performed.
[0138]
[0139] The compositions of Examples 1 to 11 exhibited relatively high densities because the mass percentage of the compound represented by formula (I) was less than 85% by mass. Furthermore, the compositions of Examples 1 to 11 showed relatively high boiling points because the mass percentage of the compound represented by formula (I) was less than 85% by mass. Additionally, the compositions of Examples 1, 3 to 10 exhibited relatively high thermal conductivity because the mass percentage of the compound represented by formula (I) was less than 85% by mass. A tendency for the density of the compositions to improve as the mass percentage of the compound represented by formula (I) decreased was also observed. Moreover, the compositions of Examples 1 to 11 showed relatively low kinematic viscosity despite the low mass percentage of the compound represented by formula (I), because the formula (III) / formula (II) value was 1.95 or less. On the other hand, the compositions of Comparative Examples 1 to 3 and 5 had higher kinematic viscosity values compared to the examples with similar mass percentages of the compound represented by formula (I), because the formula (III) / formula (II) value was greater than 1.95.
[0140] The heat transfer fluids and compositions of this disclosure can be suitably used in various applications requiring heat transfer, particularly in semiconductor manufacturing processes.
Claims
1. The following equations (I) to (III): A composition comprising a hexafluoropropene trimer represented by formula (I), wherein the compound represented by formula (I) is present in less than 85% by mass of the total amount of the compounds represented by formulas (I) to (III), and the content of the compound represented by formula (III) is 1.95 or less by mass ratio to the content of the compound represented by formula (II).
2. The composition according to claim 1, wherein the compound represented by formula (I) is contained in an amount of 0% by mass to 60% by mass relative to the total amount of the compounds represented by formulas (I) to (III).
3. The composition according to claim 1 or claim 2, wherein the compound represented by formula (I) is contained in an amount of 0% by mass to 35% by mass relative to the total amount of the compounds represented by formulas (I) to (III).
4. The composition according to any one of claims 1 to 3, wherein the compound represented by formula (I) is contained in an amount of 0% to 30% by mass relative to the total amount of the compounds represented by formulas (I) to (III).
5. The composition according to any one of claims 1 to 4, wherein the compound represented by formula (I) is contained in an amount of 0% to 25% by mass relative to the total amount of the compounds represented by formulas (I) to (III).
6. The composition according to any one of claims 1 to 5, wherein the content of the compound represented by formula (III) is 0.40 to 1.95 by mass relative to the content of the compound represented by formula (II).
7. The composition according to any one of claims 1 to 6, wherein the content of the compound represented by formula (III) is 0.80 to 1.95 by mass relative to the content of the compound represented by formula (II).
8. The composition according to any one of claims 1 to 7, wherein the content of the compound represented by formula (III) is 0.10 to 0.80 by mass relative to the content of the compound represented by formula (II).
9. A composition according to any one of claims 1 to 8, used in a semiconductor manufacturing process.
10. (i) C m F 2m and / or C n F (2n-2) [where m is an integer of 4 or more and 12 or less. n is an integer of 4 or more and 12 or less.], (where the content of such C m F 2m and / or C n F (2n-2) is 0.0001 to 10 parts by mass with respect to 100 parts by mass of the total amount of the hexafluoropropene trimer represented by C 9 F 18 ), (ii) water (where the content of such water is 0.0001 to 0.1 parts by mass with respect to 100 parts by mass of the total amount of the hexafluoropropene trimer represented by the above C 9 F 18 ), and / or (iii) fluoride ion (where the content of such fluoride ion is 0.0000001 to 5 parts by mass with respect to 100 parts by mass of the total amount of the hexafluoropropene trimer represented by C 9 F 18 ), and further contains the composition according to any one of claims 1 to 9.
11. The composition according to any one of claims 1 to 10, further comprising a conductive substance, wherein the content of the conductive substance is 100 ppm by mass or less.
12. The composition according to any one of claims 1 to 11, further comprising a conductive substance, wherein the content of insoluble matter with a particle size of 5 μm or more is 30 particles / mL or less.
13. A composition for use as a heat transfer fluid, according to any one of claims 1 to 12.
14. The composition according to any one of claims 1 to 13, which is a substitute for a heat transfer fluid comprising at least one selected from the group consisting of perfluorotripropylamine, perfluoropolyether, and a mixture of methoxytridecafluoroheptene isomers.
15. A heat transfer fluid comprising the composition according to any one of claims 1 to 14.
16. The heat transfer fluid according to claim 15, further comprising a stabilizer.
17. A heat transfer fluid according to claim 15 or claim 16, used in a semiconductor manufacturing process.
18. Use for heat transfer of the composition according to any one of claims 1 to 14, or the heat transfer fluid according to any one of claims 15 to 17.
19. A heat transfer device comprising: a device; and a mechanism for transferring heat to or from the device, comprising a composition according to any one of claims 1 to 14, or a heat transfer fluid according to any one of claims 15 to 17.
20. The heat transfer apparatus according to claim 19, wherein the device is a wafer, microprocessor, power control semiconductor, electrical branch switch, power transformer, circuit board, multichip module, mounted and unmounted semiconductor device, chemical reactor, nuclear reactor, fuel cell, laser, or missile component used in the manufacture of semiconductors.
21. A semiconductor manufacturing apparatus comprising a heat transfer device according to claim 19 or claim 20.
22. A heat transfer method comprising the steps of preparing a device and transferring heat to or from the device using a composition according to any one of claims 1 to 14 or a heat transfer fluid according to any one of claims 15 to 17.
23. The heat transfer method according to claim 22, wherein the device is a wafer used to manufacture a semiconductor.
24. Use of the composition according to any one of claims 1 to 14 as a substitute for a heat transfer fluid comprising at least one selected from the group consisting of perfluorotripropylamine, perfluoropolyether, and a mixture of methoxytridecafluoroheptene isomers.