Method for producing purified composition, composition, and heat transfer device and heat transfer method using said composition

Abstract

The present invention provides a composition in which the amount of conductive material has been reduced. This composition contains a fluorine compound and a conductive substance. In the composition, (1) the fluorine compound is at least one type of compound selected from the group consisting of compounds represented by C6F12, hydrofluoroolefins, perfluoropolyethers, hydrofluoroethers, and hydrofluoropolyethers, and (2) the content of the conductive material is 100 ppm by mass or less.

Description

A method for producing a purified composition, the composition itself, and a heat transfer apparatus and heat transfer method using the composition.

[0001] This disclosure relates to a method for producing a purified composition, the composition itself, and a heat transfer device and a heat transfer method using the composition.

[0002] Thermal management is necessary in electrical and electronic equipment. For example, process temperature must be controlled in semiconductor wafer manufacturing. Furthermore, excess heat generated in microprocessors, data centers, power electronics, or aircraft needs to be removed. Heat transfer fluids are used to address these challenges. Generally, such heat transfer fluids are desirable because they have low fluidity and viscosity, and excellent dielectric properties.

[0003] Currently, it is known that hexafluoropropene (HFP) dimers can be used as heat transfer fluids (Patent Document 1).

[0004] Because HFP dimers have a low global warming potential (GWP), they are attracting attention as a substitute for chlorofluorocarbons (CFCs) and hydrochlorofluorocarbons (HCFCs).

[0005] Chinese Patent Application Publication No. 115706279

[0006] The object of this disclosure is to provide a composition in which conductive material is reduced.

[0007] The Disclosers have diligently conducted research to solve the above problems and have found that the above problems can be solved by a composition obtained by subjecting a conventionally known so-called heat transfer fluid (including conductive material), as exemplified in the background technology, to a specific purification process. Further research has led to the completion of this disclosure.

[0008] In other words, the present disclosure includes the following embodiments: [1] A composition containing a fluorine compound and a conductive material, wherein (1) the fluorine compound is C ６ F １２At least one selected from the group consisting of a compound represented by, hydrofluoroolefin, perfluoropolyether, hydrofluoroether, and hydrofluoropolyether, and (2) the content of the conductive substance is 100 ppm by mass or less with respect to the whole composition. [2] A composition containing a fluorine compound and a conductive substance, (1) the fluorine compound is C ６ F １２ At least one selected from the group consisting of a compound represented by, hydrofluoroolefin, perfluoropolyether, hydrofluoroether, and hydrofluoropolyether, and (2) the content of insoluble matter having a particle size of 5 μm or more is 10 pieces / mL or less. [3] The composition according to item 1 or 2, wherein the content of the fluorine compound contained in the composition is 60% by mass or more with respect to the total amount of the composition. [4] The C ６ F １２ The compound represented by is at least one compound selected from the group consisting of the following formulas (I) and (II): The composition according to any one of items 1 to 3, which is at least one compound selected from the group consisting of compounds represented by. [5] The composition according to item 4, wherein the abundance ratio E / (E + Z) of the E-form to the Z-form of the compound represented by the formula (I) is more than 0.5. [6] The composition according to item 4, wherein E / (E + Z) of the compound represented by the formula (I) is 0.8 to 1. [7] The composition according to item 4, wherein E / (E + Z) of the compound represented by the formula (I) is 0.97 to 1. [8] The content of the compound represented by the formula (I) is 85% by mass or more with respect to the total amount of the compound represented by the formula (I) and the compound represented by the formula (II). The composition according to item 4 or item 5. [9] (i) C ｍ F ２ｍ And / or C ｎ F （２ｎ－２） [wherein, m is an integer of 4 or more and 12 or less and other than 6 and |9. n is an integer of 4 or more and 12 or less.] (Here, such C ｍ F ２ｍ And / or C ｎ F （２ｎ－２）[wherein m is an integer between 4 and 12, other than 6 and 9; n is an integer between 4 and 12.] The content of (ii) water (wherein the content of such water is 0.0001 to 0.1 parts by mass per 100 parts by mass of the total amount of the fluorine compounds), and / or (iii) fluoride ions (wherein the content of such fluoride ions is 0.0000001 to 5 parts by mass per 100 parts by mass of the total amount of the fluorine compounds), further comprising as described in any one of claims 1 to 8.

[10] The composition according to any one of claims 1 to 9, which is a composition for heat transfer fluids.

[11] A heat transfer device comprising a device and a mechanism for transferring heat to or from the device, comprising the composition according to any one of claims 1 to 10.

[12] A heat transfer method comprising the steps of preparing a device and transferring heat to or from the device using a composition according to any one of items 1 to 10.

[13] A method comprising the steps of purifying a composition containing a fluorine compound and a conductive substance to obtain a composition in which the conductive substance is reduced from the composition, wherein (1) the fluorine compound is C ６ F １２A method for producing a purified composition, wherein the compound is at least one selected from the group consisting of a compound represented by, hydrofluoroolefin, perfluoropolyether, hydrofluoroether, and hydrofluoropolyether, and (2) the purification process is a process using at least one selected from the group consisting of a filtration filter, an ion exchange resin, a metal ion removal filter, a metal ion removal agent, distillation, rectification, centrifugation, and electrostatic adsorption.

[14] A method for producing a composition according to item 13, wherein in the purification process, the purified composition is kept in a sealed environment.

[15] A method for producing a composition according to item 13 or item 14, wherein the composition has a content of the conductive substance of 100 ppm by mass or less.

[16] A method for producing a composition according to any one of items 13 to 15, wherein the conductive substance is at least one selected from the group consisting of metal, metal ions, carbon, conductive polymers, and superconducting ceramics.

[17] A method for producing a composition according to any one of items 13 to 16, wherein the composition has a content of insoluble particles with a particle size of 5 μm or more of 10 particles / mL or less.

[18] The method for producing the composition according to any one of claims 13 to 17, wherein the composition has a kinematic viscosity of 2.0 cSt or less at -40°C.

[19] The method for producing the composition according to any one of claims 13 to 18, wherein the composition has a freezing point of -70°C or less.

[20] The method for producing the composition according to any one of claims 13 to 19, wherein the composition has a boiling point of 35 to 180°C.

[21] The C ６ F １２ The compounds represented by the following formulas (I) and (II): A method for producing the composition according to any one of claims 13 to 20, wherein the compound is at least one compound selected from the group consisting of compounds represented by the formula (I).

[22] A method for producing the composition according to claim 21, wherein the content of the compound represented by formula (I) is 85% by mass or more of the total amount of the compound represented by formula (I) and the compound represented by formula (II).

[23] The hydrofluoroolefin is the following formula (III): R １ R ２ C=CR ３ R ４ (III) is expressed as, where R １ , R２ , R ３ and R ４ A method for producing the composition according to any one of claims 13 to 22, wherein is the same or different hydrogen atom, fluorine atom, or a C1-C3 hydrocarbon group in which hydrogen may be substituted with fluorine, and in formula (III), has one or more hydrogen atoms and one or more fluorine atoms.

[24] The perfluoropolyether is the following formula (IV): RO-Rf １ Represented as -R' (IV), where R and R' are the same or different, -C ｍ F ２ｍ＋１ It is a single-valued base represented by , where m is an integer from 1 to 3, and Rf １ is a divalent fluoropolyoxyalkylene group containing two repeating units, wherein the repeating units are: (i) -CFXO-, (wherein X is F or CF ３ (is); (ii) -CF ２ CFXO-(wherein X is F or CF) ３ (is); (iii) - CFXCF ２ O - (wherein X is F or CF) ３ (is); or (iv) -CF ２ CFXCF ２ O - (wherein X is F or CF) ３ A method for producing the composition according to any one of claims 13 to 23, wherein the divalent group is represented by ( ).

[25] The hydrofluoroether is represented by the following formula (V): R-O-R' (V), where R is -C ｍ H ｘ F ｙ It is a monovalent group represented by , where R' is -C ｎ H ａ F ｂ A method for producing the composition according to any one of items 13 to 24, wherein the monovalent group is represented by the following formula (VI): RO-(R Ｈ ) ｎRepresented as -R' (VI), where R and R' are each independently a C1-C6 hydrocarbon group in which hydrogen may be substituted with fluorine and which may contain an unsaturated bond, (R Ｈ ) ｎ is a divalent polyoxyalkylene group containing a repeating unit, n is an integer of 1 or more, and the repeating unit is: (i) -CHXO- (wherein X is H or CH ３ (is); (ii) -CH ２ CHXO-(wherein X is H or CH) ３ (is); (iii) -CHXCH ２ O-(wherein X is H or CH) ３ (is); or (iv) - CH ２ CHXCH ２ O-(wherein X is H or CH) ３ A method for producing the composition according to any one of claims 13 to 25, wherein the divalent group is represented by ).

[0009] This disclosure makes it possible to provide a composition with reduced conductive material content. In one application of the composition, such as transferring heat to or from a device, if the composition contains conductive material (metal, metal ions, carbon, conductive polymer, superconducting ceramics, etc.), these materials may penetrate through gaps in the device, potentially causing a short circuit. Furthermore, repeated use of the composition may cause blockage of the piping through which the composition circulates. Therefore, by providing a composition with reduced conductive material content, the above problems can be improved.

[0010] In this specification, "contains" is a concept that encompasses all of the following: "contains," "consist essentially of," and "consist of." Furthermore, in this specification, when a numerical range is indicated as "A to B," it means A or greater and B or less.

[0011] 1. Method for producing the composition The method for producing the composition of the present disclosure comprises the steps of purifying a composition containing a fluorine compound and a conductive substance to obtain a composition in which the conductive substance is reduced from the composition, (1) the fluorine compound is C ６ F １２ (1) The compound is at least one selected from the group consisting of a compound represented by , hydrofluoroolefin, perfluoropolyether, hydrofluoroether, and hydrofluoropolyether, and (2) the purification process is a process using at least one selected from the group consisting of a filtration filter, an ion exchange resin, a metal ion removal filter, a metal ion removal agent, distillation, rectification, centrifugation, and electrostatic adsorption. In this disclosure, "reduction" in purification means reducing the content of the conductive substance in the composition.

[0012] Conventional known heat transfer fluids, such as those exemplified in the background technology, contain conductive materials (metals, metal ions, carbon, conductive polymers, superconducting ceramics, etc.) according to the researchers of this disclosure. These conductive materials include not only those that are inevitably mixed in during the manufacturing process of the heat transfer fluid, but also those that are mixed in after use. When these heat transfer fluids are used to transfer heat to or from a device, conductive materials may enter through gaps in the device, potentially causing a short circuit. Furthermore, repeated use of the heat transfer fluid may cause blockage of the piping through which the heat transfer fluid circulates. Conventional known heat transfer fluids can also be described as "compositions containing heat transfer fluid and conductive materials" because they contain conductive materials. The manufacturing method of this disclosure is characterized by subjecting a composition containing heat transfer fluid and conductive materials (hereinafter also referred to as the "pre-purification composition") to a specific purification process to obtain a composition in which the conductive material has been reduced. The requirements of the manufacturing method of this disclosure will be described below.

[0013] (1) Composition containing a fluorine compound and a conductive substance (composition before purification) The composition before purification contains a fluorine compound and a conductive substance. Here, the fluorine compound is C ６ F １２It is at least one selected from the group consisting of the compound represented by , hydrofluoroolefin, perfluoropolyether, hydrofluoroether, and hydrofluoropolyether.

[0014] The content of the fluorine compound in the composition is preferably 80% by mass or more, more preferably 85% by mass or more, even more preferably 90% by mass or more, and particularly preferably 95% by mass or more, based on the total composition. Furthermore, the content of the fluorine compound in the composition is preferably 99.9999% by mass or less, based on the total composition. Note that the fluorine compound of this disclosure is C ６ F １２ When the compound is selected from the group consisting of the compound represented by , hydrofluoroolefin, perfluoropolyether, hydrofluoroether, and hydrofluoropolyether, "fluorine compound content" means the total content of the above two or more components.

[0015] The fluorine compound contained in the composition may be a heat transfer fluid compound.

[0016] (1-1) C ６ F １２ Compound C ６ F １２ The compound represented by is preferably a hexafluoropropene (HFP) dimer.

[0017] As a hexafluoropropene dimer, C ６ F １２ A wide range of well-known materials represented by [the symbol] can be adopted, and there are no particular limitations.

[0018] Examples of such hexafluoropropene dimers include the compounds represented by the following formulas (I) to (II).

[0019]

[0020] In this disclosure, the compound represented by formula (I) above includes both the E and Z isomers of the diastereomer unless otherwise specified.

[0021] In the composition of the present disclosure, the ratio of the E-isomer to the Z-isomer of the compound represented by formula (I) above, E / (E+Z), is greater than 0.5 (i.e., the ratio of the E-isomer is greater than that of the Z-isomer), preferably 0.67 or higher, more preferably 0.8 or higher, even more preferably 0.91 or higher, even more preferably 0.95 or higher, and particularly preferably 0.97 or higher. Since the E-isomer of the compound represented by formula (I) above is more stable than the Z-isomer, if E / (E+Z) is within the above range, decomposition during long-term use can be suppressed.

[0022] Furthermore, in this disclosure, E / (E+Z) of the compound represented by formula (I) above may be 1.

[0023] C in this disclosure ６ F １２ The hexafluoropropene dimer contained in the compound represented by formula (I) to (II) above may be just one of the compounds represented by formula (I) to (II), or it may be a mixture containing both of these compounds.

[0024] When the HFP dimers are a mixture, the proportion of the compound represented by formula (I) in the whole mixture (i.e., the total amount of compounds represented by formulas (I) and (II) included in the mixture) is preferably 1% by mass or more, more preferably 10% by mass or more, even more preferably 30% by mass or more, even more preferably 40% by mass or more, particularly preferably 45% by mass or more, and most preferably 50% by mass or more, relative to the whole HFP dimer. Furthermore, the compound represented by formula (I) is preferably 99% by mass or less, more preferably 90% by mass or less, even more preferably 85% by mass or less (or less than 85% by mass), even more preferably 80% by mass or less, particularly preferably 70% by mass or less, and most preferably 60% by mass or less, relative to the whole HFP dimer. Furthermore, the compound represented by formula (I) is C ６ F １２The compound represented by formula (I) may be 85% by mass or more relative to the total amount of the compound represented by formula (I). In this case, the viscosity of the HFP dimer will be lower. The blending ratio of the compound represented by formula (I) above may be, for example, 10% by mass or more and 90% by mass or less, 30% by mass or more and 90% by mass or less, 10% by mass or more and 85% by mass or less, 35% by mass or more and 85% by mass or less, 10% by mass or more and less than 85% by mass, 20% by mass or more and less than 85% by mass, 30% by mass or more and less than 85% by mass, 40% by mass or more and less than 85% by mass, 50% by mass or more and less than 85% by mass, 40% by mass or more and 80% by mass or less, 55% by mass It may be % by mass or more and 80% by mass or less, 60% by mass or more and 75% by mass or less, or 65% by mass or more and 70% by mass or less, 35% by mass or more and 60% by mass or less, preferably 30% by mass or more and 90% by mass or less, preferably 40% by mass or more and less than 85% by mass, more preferably 40% by mass or more and 80% by mass or less, even more preferably 45% by mass or more and 70% by mass or less, and even more preferably 50% by mass or more and 60% by mass or less.

[0025] Similarly, the proportion of the compound represented by formula (II) is preferably 1% by mass or more, more preferably 5% by mass or more, and particularly preferably 10% by mass or more, relative to the total HFP dimer. Furthermore, the proportion of the compound represented by formula (II) is preferably 70% by mass or less, more preferably 50% by mass or less, even more preferably 30% by mass or less, and particularly preferably 20% by mass or less, relative to the total HFP dimer.

[0026] In the HFP dimer, the mass ratio of the compound represented by formula (I) to the compound represented by formula (II) (compound represented by formula (I):compound represented by formula (II)) is not particularly limited, but may be, for example, 1:9 to 9:1, 2:8 to 8:2, 3:7 to 7:3, 4:6 to 6:4, or 4.5:5.5 to 5.5:4.5.

[0027] The compounds represented by the above formulas (I) to (II) can be produced by conventional methods. For example, they can be obtained by the method described in the specification of Chinese Patent Application Publication No. 103787824, but are not limited thereto, and can be obtained by widely adopting known methods. They may also be obtained by dimerizing HFP as a raw material.

[0028] When the composition contains a compound represented by C ６ F １２ the content of the compound represented by C ６ F １２ is preferably 20% by mass or more, more preferably 40% by mass or more, still more preferably 60% by mass or more, and particularly preferably 80% by mass or more based on the whole composition. Also, the content of the compound represented by C ６ F １２ is preferably 99.9999% by mass or less based on the whole composition.

[0029] (1-2) Hydrofluoroolefin The hydrofluoroolefin is preferably represented by the following formula (III): R １ R ２ C═CR ３ R ４ (III) wherein R １ , R ２ , R ３ and R ４ are the same or different and are a hydrogen atom, a fluorine atom, or a hydrocarbon group having 1 to 3 carbon atoms in which hydrogen may be substituted by fluorine, and in formula (III), it has at least one hydrogen atom and at least one fluorine atom. Here, as the hydrofluoroolefin represented by the above formula (III), known ones can be widely adopted.

[0030] As the hydrofluoroolefin represented by the above formula (III), for example, CF ３ CH═CHCF ３ , CF ３ CH═CHC ２ F ５ , CF ３ CH═CHC ３ F ７ C２ F ５ CH=CHC ２ F ５ 、C ２ F ５ CH=CHC ３ F ７ 、C ３ F ７ CH=CHC ３ F ７ 、CF ３ CF=CHCF ３ 、CF ３ CF=CHC ２ F ５ 、CF ３ CF=CHC ３ F s ７ 、C ２ F ５ CF=CHC ２ F ５ 、C ２ F ５ CF=CHC ３ F ７ 、C ３ F ７ CF=CHC ３ F ７ 、CF ３ CH=CF C ２ F ５ 、CF ３ CH=CF C ３ F ７ 、C ２ F ５ CH=CF C ３ F ７ 、(CF ３ ) ２ C=CHCF ３ 、(CF ３ ) ２ C=CHC ２ F ５ 、(CF ３ ) ２ C=CHC ３ F ７ 、 at least one hydrofluoroolefin selected from the group consisting of can be exemplified.

[0031] Preferred specific examples of the hydrofluoroolefin represented by the above formula (III) include CF ３ CH=CH(CF ２ ) ２ CF３ CF ３ CH=CHCF(CF3) ２ CF ３ CF ２ CH=CHCF ２ CF ３ , and (CF ３ ) ２ C = CHCF ２ CF ３ Examples include at least one hydrofluoroolefin selected from the group consisting of , .

[0032] If the composition contains a hydrofluoroolefin, the hydrofluoroolefin content is preferably 20% by mass or more, more preferably 40% by mass or more, even more preferably 60% by mass or more, and particularly preferably 80% by mass or more, based on the total composition. Furthermore, the hydrofluoroolefin content in the composition is preferably 99.9999% by mass or less, based on the total composition.

[0033] Examples of hydrofluoroolefins include the product "Opteon 2P50" (manufactured by Chemours).

[0034] (1-3) Perfluoropolyethers Perfluoropolyethers (PFPEs) are preferably of the following formula (IV): RO-Rf １ Represented as -R' (IV), where R and R' are the same or different, -C ｍ F ２ｍ＋１ It is a single-valued base represented by , where m is an integer from 1 to 3, and Rf １ is a divalent fluoropolyoxyalkylene group containing two repeating units, wherein the repeating units are: (i) -CFXO-, (wherein X is F or CF ３ (is); (ii) -CF ２ CFXO-(wherein X is F or CF) ３ (is); (iii) - CFXCF ２ O - (wherein X is F or CF) ３ (is); or (iv) -CF ２ CFXCF ２ O - (wherein X is F or CF)３ It is a divalent group represented by formula (IV) above. Here, a wide range of known PFPEs can be used as the PFPE represented by formula (IV) above.

[0035] The preferred structure of the PFPE represented by the above formula (IV) is such that m is an integer from 1 to 3, and Rf is selected from the following: (1) - (CF ２ O) ａ - (CF ２ CF ２ O) ｂ - (CF ２ - (CF ２ ) ｚ’ -CF ２ O) ｃ (In the formula, a, b, and c are integers less than or equal to 100. z' is an integer of 1 or 2. a≧0, b≧0, c≧0, and a+b>0. Among these conditions, it is particularly preferable that a, b, and c are integers less than or equal to 50, that a and b are each >0, and that b / a is between 0.1 and 10.) (2)-(C ３ F ６ O) ｃ’ - (C ２ F ４ O) ｂ - (CFXO) ｔ - (In the formula, each instance of X is independently -F and -CF) ３ Selected from the following: b, c', and t are integers less than or equal to 100, and c' > 0, b ≥ 0, and t ≥ 0. Among these conditions, it is particularly preferable that b and t > 0, c' / b is between 0.2 and 5.0, and (c' + b) / t is between 5 and 50. ); or (3) - (C ３ F ６ O) ｃ’ - (CFXO) ｔ - (In the formula, each instance of X is independently -F and -CF) ３ The following is selected from the following: c' and t are integers less than or equal to 100, and c' > 0 and t ≥ 0. Among these conditions, it is particularly preferable that t > 0 and c' / t is between 5 and 50.

[0036] If the composition contains a perfluoropolyether, the perfluoropolyether content is preferably 20% by mass or more, more preferably 40% by mass or more, even more preferably 60% by mass or more, and particularly preferably 80% by mass or more, based on the total composition. Furthermore, the perfluoropolyether content in the composition is preferably 99.9999% by mass or less, based on the total composition.

[0037] Examples of perfluoropolyethers include the product names Galden® "HT135", GALDEN® "HT110", and GALDEN® "HT55" (all manufactured by Solvay).

[0038] (1-4) Hydrofluoroethers Hydrofluoroethers are preferably represented by the following formula (V): R-O-R'(V), where R is -C ｍ H ｘ F ｙ It is a monovalent group represented by , where R' is -C ｎ H ａ F ｂ The monovalent base is represented by the formula (V), where m and n are integers from 1 to 5 satisfying 4 ≤ m + n ≤ 6, and x, y, a, and b are integers of 0 or greater that satisfy the following relationships: x + y = 2m + 1; a + b = 2n + 1; a + x ≥ 1; and b + y ≥ 1. Here, a wide range of known hydrofluoroethers can be used as the hydrofluoroether represented by the above formula (V).

[0039] Examples of hydrofluoroethers represented by the above formula (V) include CF ３ (CF ２ ) ｘ O(CHX)(CF ２ ) ｙ CF ３ CF ３ (CHF) ｘ O(CHX)(CF ２ ) ｙ CF ３ CF ３ (CF ２ ) ｘ O(CHX)(CHF) ｙCF ３ 、CF ３ (CHF) ｘ O(CHX)(CHF) ｙ CF ３ 、CHF ２ (CF ２ ) ｘ O(CHX)(CF ２ ) ｙ CF ３ 、CHF ２ (CHF) ｘ O(CHX)(CHF) ｙ CF ３ 、CH ２ F(CF ２ ) ｘ O(CHX)(CF ２ ) ｙ CF ３ 、CHF ２ (CF ２ ) ｘ O(CHX)(CHF) ｙ CF ３ 、CH ３ (CF ２ ) ｘ O(CHX)(CF ２ ) ｙ CF ３ 、CF ３ (CF ２ ) ｘ O(CHX)(CF ２ ) ｙ CHF ２ 、CF ３ (CF ２ ) ｘ O(CHX)(CF ２ ) ｙ CH ２ F、CF ３ (CF ２ ) ｘ O(CHX)(CF ２ ) ｙ CH ３ 、CF ３ (CF ２ ) ｘ O(CHX)CF ２ OCH ２ CF ２ O(CF ２ ) ｙ CF ３ 、CF ３ (CF２ ) ｘ O(CHX)CF ２ OCH ２ CF ２ O(CF) ２ ) ｙ CH ３ ,CH ３ (CF ２ ) ｘ O(CHX)CF ２ OCH ２ CF ２ O(CF) ２ ) ｙ CHF ２ Examples include at least one hydrofluoroether selected from the group consisting of (where X is a hydrogen atom or a fluorine atom; x and y are independently 0, 1, 2, or 3, and x + y = 1, 2, or 3).

[0040] The hydrofluoroether represented by the above formula (V) is specifically CF ３ CF ２ CF ２ CF ２ OCH ３ CF ３ CF ２ CF (CF ３ ) OCH ３ CF ３ CF (CF ３ ) CF ２ OCH ３ CF ３ CF ２ CF ２ CF ２ OC ２ H ５ CF ３ CH ２ OCF ２ CHF ２ (CF ３ ) 2CHOCH ３ (CF ３ ) ２ CFOCH ３ CHF ２ CF ２ OCH ２ CF ３ CHF ２ CF ２ CH ２ OCF ２CHF ２ CF ３ CHFCF ２ OCH ３ CF ３ CHFCF ２ OCF ３ , trifluoromethyl 1,2,2,2-tetrafluoroethyl ether (HFE-227me), difluoromethyl 1,1,2,2,2-pentafluoroethyl ether (HFE-227mc), trifluoromethyl 1,1,2,2-tetrafluoroethyl ether (HFE-227pc), difluoromethyl 2,2,2-trifluoroethyl ether (HFE-245mf), 2,2-difluoroethyltrifluoromethyl ether (HFE-245pf), 1,1,2,3,3-hexafluoropropyl methyl ether (CF ３ CHFCF ２ OCH ３ ), 1,1,1,2,2-tetrafluoroethyl 2,2,2-trifluoroethyl ether (CHF ２ CF ２ OCH ２ CF ３ ), and 1,1,1,3,3,3-hexafluoro-2-methoxypropane ((CF ３ ) ２ CHOCH ３ ) includes.

[0041] If the composition contains a hydrofluoroether, the hydrofluoroether content is preferably 20% by mass or more, more preferably 40% by mass or more, even more preferably 60% by mass or more, and particularly preferably 80% by mass or more, based on the total composition. Furthermore, the hydrofluoroether content in the composition is preferably 99.9999% by mass or less, based on the total composition.

[0042] (1-5) Hydrofluoropolyether Hydrofluoropolyether is preferably of the following formula (VI): RO-(R Ｈ ) ｎRepresented as -R' (VI), where R and R' are each independently a C1-C6 hydrocarbon group in which hydrogen may be substituted with fluorine and which may contain unsaturated bonds (i.e., R and R' are each independently a C1-C6 hydrocarbon group in which hydrogen may be substituted with fluorine and which hydrocarbon group may contain unsaturated bonds), (R Ｈ ) ｎ is a divalent polyoxyalkylene group containing a repeating unit, where n is an integer of 1 or more, and the repeating unit is: (i) -CHXO- (wherein X is H or CH ３ (is); (ii) -CH ２ CHXO-(wherein X is H or CH) ３ (is); (iii) -CHXCH ２ O-(wherein X is H or CH) ３ (is); or (iv) - CH ２ CHXCH ２ O-(wherein X is H or CH) ３ It is a divalent group represented by the formula (VI). Here, a wide range of known hydrofluoropolyethers can be used as the hydrofluoropolyether represented by the above formula (VI).

[0043] A preferred structure of the hydrofluoropolyether represented by the above formula (VI) is such that R and R' are each independently a C1-C3 hydrocarbon group in which hydrogen may be substituted with fluorine or may contain an unsaturated bond, and R Ｈ is, -CH ２ CH ２ O- or -CH ２ CH (CH ３ ) Preferably it is O-. n is preferably 100 or less, more preferably 50 or less, even more preferably 20 or less, and particularly preferably 10 or less.

[0044] The hydrofluoropolyether represented by the above formula (VI) is specifically CHF ２ CF ２ OCH ２ CH ２ OCF ２ CHF ２ CHF ２ CF２ O(CH ２ CH ２ O) ２ CF ２ CHF ２ 、CHF ２ CF ２ O(CH ２ CH ２ O) ３ CF ２ CHF ２ 、CHF ２ CF ２ OCH ２ CH (CH ３ )OCF ２ CHF ２ 、CHF ２ CF ２ O(CH ２ CH (CH ３ )O) ２ CF ２ CHF ２ 、CHF ２ CF ２ O(CH ２ CH (CH ３ )O) ３ CF ２ CHF ２ 、CF ３ CHFCF ２ OCH ２ CH ２ OCF ２ CHFCF ３ 、CF ３ CHFCF ２ O(CH ２ CH ２ O) ２ CF ２ CHFCF ３ 、CF ３ CHFCF ２ O(CH ２ CH ２ O) ３ CF ２ CHFCF ３ 、CF ３ CHFCF ２ OCH ２ CH (CH ３ )OCF ２ CHFCF ３ 、CF ３ CHFCF ２ O(CH２ CH (CH ３ )O) ２ CF ２ CHFCF ３ , and CF ３ CHFCF ２ O(CH ２ CH (CH ３ )O) ３ CF ２ CHFCF ３ These are some examples.

[0045] If the composition contains a hydrofluoropolyether, the hydrofluoropolyether content is preferably 20% by mass or more, more preferably 40% by mass or more, even more preferably 60% by mass or more, and particularly preferably 80% by mass or more, based on the total composition. Furthermore, the hydrofluoropolyether content in the composition is preferably 99.9999% by mass or less, based on the total composition.

[0046] (1-6) Compounds that may be additionally contained in the composition of this disclosure are the five components (C) mentioned above. ６ F １２ The compound represented by , at least one selected from the group consisting of hydrofluoroolefins, perfluoropolyethers, hydrofluoroethers, and hydrofluoropolyethers, collectively referred to as the "five components of this disclosure." Additional compounds different from ) (also referred to as "additional components") may be included. The additional components may be one or more types, and examples of additional components include hexafluoropropene trimers, hexafluoropropene tetramers, perfluorotripropylamine, perfluorotributylamine, and the like.

[0047] The hexafluoropropene trimer may contain one or more compounds represented by the following formulas (A) to (C).

[0048] In this disclosure, the compound represented by formula (A) may include both the E and Z forms of the diastereomer.

[0049] The hexafluoropropene tetramer may contain 1,1,1,2,5,6,6,6-octafluoro-2,3,5-tris(trifluoromethyl)-4-(perfluoropropyl-2-yl)-3-hexene.

[0050] Perfluorotripropylamine is also called tris(heptafluoropropyl)amine or N,N-bis(heptafluoropropyl)(heptafluoropropyl)amine, and its general formula is N(CF ２ CF ２ CF ３ ) ｎ (CF(CF ３ ) CF ３ ) ３－ｎ (where n is an integer from 0 to 3) Perfluorotripropylamine may contain only one compound from the above general formula, or it may contain multiple compounds. N(CF ２ CF ２ CF ３ ) ３ Preferably, N(CF) is used as an impurity. ２ CF ２ CF ３ ) ｎ (CF(CF ３ ) CF ３ ) ３－ｎ (where n is an integer from 0 to 2) may be included. Specifically, examples include the product name "Fluorinert®" (manufactured by 3M) (FC-3283).

[0051] If the composition in this disclosure contains additional components, the content of the additional components is preferably 20% by mass or less, more preferably 15% by mass or less, even more preferably 10% by mass or less, and particularly preferably 5% by mass or less, relative to the entire composition. In the manufacturing method of this disclosure, the kinematic viscosity, freezing point, and boiling point characteristics of the composition containing the fluorine compound and the conductive substance (composition before purification) affect the efficiency of removing the conductive substance from the composition before purification in relation to the predetermined purification process (a process using at least one selected from the group consisting of a filtration filter, an ion exchange resin, a metal ion removal filter, a metal ion removal agent, distillation, rectification, centrifugation, and electrostatic adsorption). Therefore, it is preferable that the composition substantially does not contain additional components (for example, the content of additional components is 0.0001% by mass or less relative to the entire composition).

[0052] In both cases where additional components are included in addition to the five components of this disclosure, and where additional components are not included, for example, a wide range of compositions (pre-purification compositions) containing a fluorine compound and a conductive substance can be adopted, such as synthetic or commercially available products of each of the five components of this disclosure as described above, and / or compositions in which a conductive substance is subsequently mixed in by using them as a heat transfer fluid for a certain period of time.

[0053] (1-7) Examples of conductive substances included in the composition before purification include at least one selected from the group consisting of metals, metal ions, metal oxides, metal nitrides, carbon, conductive polymers, and superconducting ceramics. When a heat transfer fluid containing a conductive substance is used to transfer heat to or from a device, the conductive substance may penetrate through gaps in the device, potentially causing a short circuit. Furthermore, repeated use of the heat transfer fluid may cause blockage of the piping through which the heat transfer fluid circulates. Therefore, reducing the content of these conductive substances is important to improve the performance of the heat transfer fluid. The shape and size of conductive substances vary depending on the type of conductive substance, but are generally around 0.001 to 10 μm.

[0054] Examples of metal species used as conductive materials in metals, metal ions, metal oxides, and metal nitrides include Al, Ba, Be, Bi, Ca, Co, Cr, Cu, Fe, Ga, Ir, K, Li, Mg, Mn, Na, Ni, Pb, Pd, Sr, V, and Zn.

[0055] The metal used as a conductive material may be in elemental form or as an alloy. The metal as a conductive material is typically included in the form of fine particles.

[0056] Ions as conductive materials include all possible ionic forms of each metal species. Ions as conductive materials may exist in a dissolved form as ions with any valency, or they may exist as ions within a material, for example, in a coordinated form.

[0057] The metal oxide used as a conductive material may be an oxide of a single metal species, or it may be an oxide of multiple metal species (i.e., a composite oxide).

[0058] The metal nitride used as a conductive material may be a nitride of one type of metal, or it may be a nitride of multiple types of metals (i.e., a composite nitride).

[0059] Carbon black is an example of carbon used as a conductive material.

[0060] Examples of conductive polymers used as conductive materials include polyacetylene and polythiophene.

[0061] The content of conductive material in the composition before purification is not limited, but for example, if it is 150 ppm by mass or more (more preferably 500 ppm by mass or more), the manufacturing method of this disclosure can effectively reduce the content of conductive material. The content of conductive material can be measured using an inductively coupled plasma mass spectrometer (ICP-MS) as described in the examples.

[0062] Furthermore, the composition before purification may contain insoluble matter, including solids such as resin fragments from the container, dust and dirt introduced from the air, regardless of whether they are conductive or not. However, if the content of insoluble matter with a particle size of 5 μm or larger is 50 particles / mL or more (and even 100 particles / mL or more), the purification process of this disclosure, which reduces the content of conductive material, can effectively reduce the content of insoluble matter at the same time. The number of insoluble conductive material particles (fine particles) contained in the composition can be measured using a liquid particle counter as described in the examples.

[0063] (1-8) Physical properties of the composition before purification The composition before purification is a composition containing a heat transfer fluid and a conductive substance, and in the manufacturing method of the present disclosure, it is subjected to a purification process using at least one selected from the group consisting of a filtration filter, an ion exchange resin, a metal ion removal filter, a metal ion removal agent, distillation, rectification, centrifugation, and electrostatic adsorption.

[0064] When the content of conductive substances is reduced by the above-mentioned purification process, it is preferable from the viewpoint of purification efficiency that the pre-purification composition has low kinematic viscosity, a low freezing point, and a high boiling point. By making the four components of this disclosure mentioned above the main components of the heat transfer fluid (preferably 80% by mass or more), the pre-purification composition is more likely to possess the physical properties of low kinematic viscosity, a low freezing point, and a high boiling point.

[0065] The kinematic viscosity of the composition before purification at -40°C is preferably 2.0 cSt or less, more preferably 1.5 cSt or less, even more preferably 1.2 cSt or less, and most preferably 1.0 cSt or less. A low kinematic viscosity of 2.0 cSt or less improves filterability, thereby increasing the efficiency of purification processes, particularly those using filtration filters, metal ion removal filters, etc. The method for measuring the kinematic viscosity at -40°C in this disclosure is as described in the examples.

[0066] The freezing point of the composition before purification is preferably -70°C or lower, more preferably -80°C or lower, even more preferably -100°C or lower, and most preferably -120°C or lower. A low freezing point of -70°C or lower allows for purification at low temperatures, thereby reducing heat transfer fluid loss due to evaporation and improving the efficiency of the purification process. The method for measuring the freezing point in this disclosure is as described in the examples.

[0067] The boiling point of the composition before purification is preferably 35°C or higher, more preferably 40°C or higher, and even more preferably 45°C or higher. A boiling point of 35°C or higher reduces heat transfer fluid loss due to evaporation, etc., for the same reasons as a low freezing point, thereby increasing the efficiency of the purification process. Furthermore, the boiling point of the composition before purification is preferably 180°C or lower, more preferably 150°C or lower, even more preferably 120°C or lower, even more preferably 90°C or lower, even more preferably 80°C or lower, and most preferably 75°C or lower. The method for measuring the boiling point in this disclosure is as described in the examples.

[0068] (1-9) Purification treatment of the composition before purification In the manufacturing method of the present disclosure, the composition before purification is subjected to a purification treatment using at least one selected from the group consisting of a filtration filter, an ion exchange resin, a metal ion removal filter, a metal ion removal agent, distillation, rectification, centrifugation, and electrostatic adsorption.

[0069] These purification methods can be applied according to conventional methods, but in the manufacturing method of this disclosure, purification using a filtration filter is particularly preferred. When using a filtration filter, there are no upper or lower limits on the pore size of the filter, but for example, the upper limit can be set to 5 μm or less, 1 μm or less, 0.5 μm or less, or 0.1 μm or less. Also, for example, the lower limit can be set to 1.0 nm or more, 0.5 nm or more, 0.2 nm or more, or 0.1 nm or more.

[0070] In purification processes using a filtration filter, filtration may be performed by vacuum filtration, atmospheric pressure filtration, or pressure filtration, but pressure filtration is preferred. There are no upper or lower limits on the amount of pressure, but for example, the lower limit can be set to 0.001 MPa, 0.005 MPa, 0.01 MPa, 0.02 MPa, 0.05 MPa, or 0.1 MPa or higher. Alternatively, for example, the lower limit can be set to 0.5 MPa, 0.3 MPa, 0.2 MPa, 0.1 MPa, 0.05 MPa, or 0.03 MPa or lower.

[0071] In preferred embodiments of the manufacturing method of this disclosure, the purified composition is kept in a sealed environment. For example, the purification process may be carried out with the entire purification system isolated from the outside air, but it is preferable that the composition before purification is in an open environment (i.e., in contact with the outside air) and the purified composition is kept in a sealed environment. For example, when purification is carried out using a filtration filter, the purification system is configured such that the filtrate receiver is isolated from the outside air, thereby ensuring that the purified composition is kept in a sealed environment. Also, for example, when purification is carried out by distillation or rectification, the purification system and the distillate receiver are configured such that they are isolated from the outside air, ensuring that the purified composition is kept in a sealed environment. Furthermore, for example, when purification is carried out by centrifugation, the entire centrifugation system may be kept in a sealed environment, but it is sufficient to centrifuge the composition being subjected to centrifugation in a sealed environment. Keeping the purified composition in a sealed environment can further improve the purity of the resulting composition.

[0072] The ion exchange resin may be either a cation exchange resin or an anion exchange resin. As an anion exchange resin, for example, an ion exchange resin having an amino group and / or a quaternary ammonium group as a functional group can be used. The ion exchange resin is preferably a strongly basic anion exchange resin. The basicity of the anion exchange resin can be set in various ways depending on the polymer backbone and / or the type of functional group. Commercially available anion exchange resins may be used, for example, the "Diaion (registered trademark) SA" series from Mitsubishi Chemical Corporation, "A200" from Purolite Corporation, and the "Amberlite (registered trademark)" series from Organo Corporation. As a cation exchange resin, for example, an ion exchange resin having a carboxylic acid group and / or a sulfonic acid group as a functional group can be used. The acidity of the cation exchange resin can be set in various ways depending on the polymer backbone and / or the type of functional group. A commercially available cation exchange resin may be used, such as the "Diaion® SK" series from Mitsubishi Chemical Corporation, "C100" from Purolite Corporation, or the "Amberlite®" series from Organo Corporation.

[0073] Examples of metal ion removal agents include chelating agents and activated carbon. Examples of chelating agents include CRB03, CRB05, CR20 (all manufactured by Mitsubishi Chemical Corporation), Si-Thiol, Si-Thiourea, Si-TMT, Si-DMT, Si-SCX-2, Si-Amine, Si-Trisamine, Si-Imidazole, Si-TBD, Si-PHI (all manufactured by SiliCycle), MuromacXMS-5418 (manufactured by Muromachi Chemical Co., Ltd.), IRC76-HG, IRC748, IRC747UPS (all manufactured by Organo), S910 (manufactured by Purolite), and MPA (manufactured by Reaxa QuadraPure). Examples of activated carbon include "Shirasagi (registered trademark)" from Osaka Gas Chemical Co., Ltd., "Filtrasorb (registered trademark) CAL," "Diahope (registered trademark)," and "Diasorb (registered trademark)" from Calgon Carbon Japan Co., Ltd., and the "Evadia (registered trademark)" series from Sui-ing Co., Ltd.

[0074] Through the above purification process, a composition with a reduced content of conductive material (purified composition) is obtained. The content of conductive material in the composition (purified composition) will be described later.

[0075] The manufacturing method disclosed herein includes the purification step described above, but may also include steps such as blending stabilizers or other additives into the composition, or other steps. The types of additives will be described later.

[0076] 2. Composition (Purified Composition) The composition (purified composition) has a reduced content of conductive material due to the purification process described above. Specifically, in a preferred embodiment, the composition has a conductive material content of 100 ppm by mass or less, preferably 75 ppm by mass or less, more preferably 50 ppm by mass or less, and even more preferably 10 ppm by mass or less. Since it is metals and metal ions in particular that can cause short circuits by penetrating through gaps in the device, the content of conductive material in this disclosure may also be considered by focusing on "at least one of metals and metal ions" as needed.

[0077] Furthermore, the composition preferably contains 10 particles / mL or less, more preferably 5 particles / mL or less, and even more preferably 3 particles / mL or less, of insoluble matter with a particle size of 5 μm or more (including solid matter such as resin fragments from the container, dust and dirt mixed in from the air, regardless of whether it is conductive or not).

[0078] The composition (purified composition) may contain known additives such as stabilizers. Stabilizers exert a stabilizing effect, thereby functioning as so-called acid acceptors or antioxidants. Major stabilizing effects include preventing the decomposition of fluorine compounds by capturing radicals generated in the system, and preventing further decomposition of fluorine compounds by acids by capturing acids generated in the system.

[0079] A wide range of known stabilizers can be used as such stabilizers. In particular, it is preferable to use one or more stabilizers selected from the group consisting of unsaturated alcohol-based stabilizers, nitro-based stabilizers, amine-based stabilizers, phenol-based stabilizers, and epoxy-based stabilizers, as these can effectively suppress the occurrence of metal corrosion caused by the composition.

[0080] A wide range of known unsaturated alcohol-based stabilizers can be used. For example, one or more selected from the group consisting of 3-buten-2-ol, 2-buten-1-ol, 4-propen-1-ol, 1-propen-3-ol, 2-methyl-3-buten-2-ol, 3-methyl-3-buten-2-ol, 3-methyl-2-buten-1-ol, 2-hexen-1-ol, 2,4-hexadiene-1-ol, and oleyl alcohol can be used.

[0081] As nitro-based stabilizers, a wide range of known substances can be used. Examples of aliphatic nitro compounds include nitromethane, nitroethane, 1-nitropropane, and 2-nitropropane. As aromatic nitro compounds, one or more selected from the group consisting of nitrobenzene, o-, m-, or p-dinitrobenzene, o-, m-, or p-nitrotoluene, dimethylnitrobenzene, m-nitroacetophenone, o-, m-, or p-nitrophenol, o-nitroanisole, m-nitroanisole, and p-nitroanisole can be used.

[0082] A wide range of known amine-based stabilizers can be used. For example, one or more selected from the group consisting of pentylamine, hexylamine, diisopropylamine, diisobutylamine, di-n-propylamine, diallylamine, triethylamine, N-methylaniline, pyridine, morpholine, N-methylmorpholine, triallylamine, allylamine, α-methylbenzylamine, dimethylamine, trimethylamine, ethylamine, diethylamine, triethylamine, propylamine, isopropylamine, dipropylamine, tripropylamine, butylamine, isobutylamine, dibutylamine, tributylamine, dibentilamine, tribentilamine, 2-ethylhexylamine, aniline, N,N-dimethylaniline, N,N-diethylaniline, ethylenediamine, propylenediamine, diethylenetriamine, tetraethylenepentamine, benzylamine, dibenzylamine, diphenylamine, and diethylhydroxylamine can be used.

[0083] A wide range of known phenolic stabilizers can be used. For example, one or more selected from the group consisting of 2,6-ditterybutyl-4-methylphenol, 3-cresol, phenol, 1,2-benzenediol, 2-isopropyl-5-methylphenol, and 2-methoxyphenol can be used.

[0084] A wide range of known epoxy stabilizers can be used. For example, one or more selected from the group consisting of butylene oxide, 1,2-propylene oxide, 1,2-butylene oxide, butyl glycidyl ether, diethylene glycol diglycidyl ether, and 1,2-epoxy-3-phenoxypropane can be used.

[0085] It is preferable to use a combination of stabilizers having different stabilizing effects to more effectively prevent the decomposition of fluorine compounds that can occur due to various causes, and therefore, the stabilizer preferably consists of one or more selected from the group consisting of the epoxy-based stabilizer, unsaturated alcohol-based stabilizer, nitro-based stabilizer, and phenol-based stabilizer.

[0086] From the viewpoint of effectively suppressing acid liberation from fluorine compounds and inhibiting metal corrosion by the liquid composition, the stabilizer content relative to the total composition is preferably 0.0001% by mass or more, and more preferably 0.01% by mass or more. On the other hand, considering the need to avoid undesirable changes in the physical properties of the liquid composition due to excessive addition of stabilizers, the stabilizer content relative to the total composition is preferably 10% by mass or less, and more preferably 5% by mass or less.

[0087] The composition is C ｍ F ２ｍ and / or C ｎ F （２ｎ－２） The compound may contain the compound represented by [wherein m is an integer between 4 and 12, excluding 6 and 9, and n is an integer between 4 and 12].

[0088] In the above general formula, m is an integer of 4 or greater, preferably an integer of 5 or greater, and more preferably an integer of 7 or greater. Also, n is an integer of 12 or less, preferably an integer of 11 or less, and more preferably an integer of 10 or less.

[0089] In the above general formula, n is an integer of 3 or greater, preferably an integer of 4 or greater, and more preferably an integer of 5 or greater. Furthermore, n is an integer of 12 or less, preferably an integer of 10 or less, and more preferably an integer of 8 or less. Moreover, n is particularly preferably 6.

[0090] C ｍ F ２ｍ This may be a linear compound or a cyclic compound that may have a substitutional structure. The linear compound may be a so-called alkene, and may be linear or branched.

[0091] C ｎ F （２ｎ－２） This may be a linear compound or a cyclic compound that may have a substitutional structure. The linear compound may be a so-called diene or an alkyne, and may be linear or branched.

[0092] C ｍ F ２ｍ and / or C ｎ F （２ｎ－２） Specific examples of compounds represented by include decafluorocyclohexene, perfluoro-1,3-dimethylcyclohexane, perfluorododecene, perfluoro-1,3-diisopropylcyclohexane, 1,1,1,4,4,5,5,6,7,8,8,8-dodecafluoro-2,3,6,7-tetrakis(trifluoromethyl)-2-octene, perfluoro(1,2-dipropylcyclohexene), perfluoro-2,5-dimethyl-3-ethyl-2,4-octadiene, and the like.

[0093] In the composition, C ｍ F ２ｍ and / or C ｎ F （２ｎ－２） Because it includes C ６ F １２ The stability of the compound represented by is improved.

[0094] Also, C ｍ F ２ｍ and / or C ｎ F （２ｎ－２） The content of is preferably 0.0001% by mass or more relative to the entire composition of the present disclosure.

[0095] On the other hand, C ｍ F ２ｍ and / or C ｎ F （２ｎ－２） The content of is preferably 10% by mass or less, preferably 5% by mass or less, and more preferably 1% by mass or less, relative to the entire composition.

[0096] In one embodiment, in the composition, C ｍ F ２ｍ and / or C ｎ F （２ｎ－２） The content of is preferably 0.0001 parts by mass or more, more preferably 0.01 parts by mass or more, and even more preferably 0.1 parts by mass or more, based on 100 parts by mass of the total fluorine compounds.

[0097] On the other hand, in the composition, C ｍ F ２ｍ and / or Cｎ F （２ｎ－２） The content of is preferably 10 parts by mass or less, more preferably 5 parts by mass or less, and even more preferably 1 part by mass or less, based on 100 parts by mass of the total fluorine compounds.

[0098] Note C ｍ F ２ｍ and / or C ｎ F （２ｎ－２） If multiple types are included, the above content refers to the total amount of each.

[0099] C ｍ F ２ｍ and / or C ｎ F （２ｎ－２） By setting the content of C within the above range, ６ F １２ This can suppress the decomposition of the HFP dimer represented by [formula], and consequently, it can suppress the increase in fluoride ions and the rise in acidity.

[0100] The composition may contain fluoride ions. If fluoride ions are included, the content is preferably 0.0000001 to 5 parts by mass, and more preferably 0.000001 to 1 part by mass, per 100 parts by mass of the total fluorine compounds, in terms of the thermal stability of the heat transfer fluid during long-term use.

[0101] The composition may contain water. If water is included, its content is preferably 1 to 1,000 ppm by mass per 100 parts by mass of the total fluorine compounds, in terms of the thermal stability of the heat transfer fluid during long-term use.

[0102] In one embodiment, the water content is preferably 0.0001 parts by mass or more, more preferably 0.01 parts by mass or more, and even more preferably 0.1 parts by mass or more, based on 100 parts by mass of the total fluorine compounds.

[0103] On the other hand, the water content is preferably 10 parts by mass or less, more preferably 5 parts by mass or less, even more preferably 1 part by mass or less, and particularly preferably 0.005 parts by mass or less, based on 100 parts by mass of the total fluorine compounds.

[0104] (Use of Compositions) The compositions of this disclosure are used to remove heat from or supply heat to various heat transfer objects. Heat transfer objects in this disclosure include articles, devices, and atmospheres that are cooled, heated, or maintained at a temperature to be controlled. Examples of such heat transfer objects include electrical components, mechanical components, and optical components, as well as processed products and assemblies thereof. Specific examples of heat transfer objects in this disclosure, but not limited to, include wafers used to manufacture semiconductor devices, microprocessors, power control semiconductors, electrical branch switches, power transformers, circuit boards, multi-chip modules, mounted and unmounted semiconductor devices, chemical reactors, nuclear reactors, fuel cells, lasers, and missile components.

[0105] The composition is a heat transfer composition and can be used as a liquid immersion cooling medium in applications such as single-phase liquid immersion cooling and two-phase liquid immersion cooling, as well as in applications such as chiller fluids and Rankine cycle working fluids.

[0106] The compositions of the present disclosure can be used in devices designed to transfer heat using them, by substituting them for the heat transfer fluid currently in use in such devices.

[0107] The compositions of this disclosure can be used as a drop-in, nearly drop-in, or retrofit replacement for heat transfer fluids in use. “Drop-in replacement” means replacement without modification to the equipment. “Nearly drop-in replacement” means replacement with little to no modification to the equipment. “Retrofit replacement” means replacement with minimal (no significant) modification to the equipment. Preferably, the compositions of this disclosure can be used as a drop-in or nearly drop-in replacement for the heat transfer fluids described above.

[0108] Whether a drop-in replacement, near-drop-in replacement, or retrofit replacement is possible can be determined by whether all of the following conditions are met: (i) The boiling point of the composition of the disclosure is at least about 80% or more, preferably at least about 85%, of the boiling point of the heat transfer fluid before replacement. (ii) The freezing point of the composition of the disclosure is equal to or less than the freezing point of the heat transfer fluid before replacement. (iii) The kinematic viscosity of the composition of the disclosure is at least about 200% or less, preferably at least about 150%, of the kinematic viscosity of the heat transfer fluid before replacement. (iv) The composition of the disclosure is compatible with the heat transfer fluid before replacement in any proportion.

[0109] By setting the boiling point of the composition of this disclosure to at least about 80% or more, preferably at least about 85% or more, of the boiling point of the heat transfer fluid before replacement, the occurrence of cavitation and leakage from the device can be suppressed. The upper limit of the boiling point of the heat transfer fluid is not particularly limited, but for example, it may be at least about 130% or less of the boiling point of the heat transfer fluid before replacement.

[0110] By setting the freezing point of the composition of this disclosure to be equal to or lower than the freezing point of the heat transfer fluid before replacement, it becomes possible to use it at temperatures below the conventional operating temperature, thereby widening the operating temperature range. The upper limit of the freezing point of the heat transfer fluid is not particularly limited, but for example, it may be 30°C higher or lower than the freezing point of the heat transfer fluid before replacement.

[0111] By setting the kinematic viscosity of the composition of this disclosure to at least about 200%, preferably at least about 150%, of the kinematic viscosity of the heat transfer fluid before replacement, it is possible to suppress an increase in power consumption or reduce power consumption. It is preferable, but not limited to, that the kinematic viscosity be compared at the operating temperature, and for example, it can be compared at any temperature between -20°C and -40°C, specifically at -20°C.

[0112] The composition of this disclosure is compatible with the heat transfer fluid prior to replacement in any proportion, thereby facilitating the replacement process.

[0113] Furthermore, the compositions of the present disclosure are more suitable as drop-in replacements, nearly drop-in replacements, or retrofit replacements if they satisfy the following conditions: (v) The composition of the present disclosure has a dielectric constant of 120% or less of the heat transfer fluid before replacement. (vi) The composition of the present disclosure has a dielectric strength of 90% or more of the heat transfer fluid before replacement. (vii) The composition of the present disclosure has a specific heat of 90% or more of the heat transfer fluid before replacement. (viii) The composition of the present disclosure has a thermal conductivity of 90% or more of the heat transfer fluid before replacement.

[0114] The composition of this disclosure can be suitably used as a substitute composition by setting its dielectric constant to 120% or less of the dielectric constant of the heat transfer fluid before replacement. The upper limit of the dielectric constant of the heat transfer fluid is not particularly limited, but for example, it may be 80% or more of the dielectric constant of the heat transfer fluid before replacement.

[0115] The composition disclosed herein can be suitably used as a replacement composition by setting its dielectric strength to 90% or more of the dielectric strength of the heat transfer fluid before replacement. The upper limit of the dielectric strength of the heat transfer fluid is not particularly limited, but for example, it may be 120% or less of the dielectric strength of the heat transfer fluid before replacement.

[0116] The composition disclosed herein can be suitably used as a substitute composition by setting its specific heat to 90% or more of the specific heat of the heat transfer fluid before replacement. The upper limit of the specific heat of the heat transfer fluid is not particularly limited, but for example, it may be 120% or less of the specific heat of the heat transfer fluid before replacement.

[0117] The composition disclosed herein can be suitably used as a substitute composition by setting its thermal conductivity to 90% or more of the thermal conductivity of the heat transfer fluid before replacement. The upper limit of the thermal conductivity of the heat transfer fluid is not particularly limited, but for example, it may be 120% or less of the thermal conductivity of the heat transfer fluid before replacement.

[0118] The solidification point of the compositions of this disclosure may preferably be -80°C or lower, more preferably -85°C or lower, and even more preferably -90°C or lower. The lower limit of the solidification point of the compositions of this disclosure is not particularly limited, but may be, for example, -160°C or higher, or -140°C or higher.

[0119] The dielectric constant of the compositions of this disclosure may preferably be 3.0 or less, more preferably 2.5 or less, and even more preferably 2.0 or less. The lower limit of the dielectric constant of the compositions of this disclosure is not particularly limited, but may be, for example, 1.1 or more.

[0120] The dielectric strength of the compositions of this disclosure may preferably be 40 kV or more, more preferably 50 kV or more, and even more preferably 50 kV or more. Furthermore, there is no particular upper limit to the dielectric strength of the compositions of this disclosure, but it may be, for example, 150 kV or less, or 100 kV or less.

[0121] The specific heat of the compositions disclosed herein may be preferably 800 J / kg·K or more, more preferably 900 J / kg·K or more, and even more preferably 1000 J / kg·K or more at 30°C. Furthermore, the upper limit of the specific heat of the compositions disclosed herein is not particularly limited, but may be, for example, 2000 J / kg·K or less, or 1500 J / kg·K or less.

[0122] The thermal conductivity of the composition disclosed herein is preferably 0.055 W / mK or higher, more preferably 0.060 W / mK or higher, and even more preferably 0.065 W / mK or higher at 30°C. Furthermore, there is no particular upper limit to the thermal conductivity of the composition disclosed herein, but it may be, for example, 0.090 W / mK or lower, or 0.080 W / mK or lower.

[0123] The boiling point of the composition disclosed herein is the temperature at which a peak originating from endothermic heating was observed when the temperature was increased from 25°C at a rate of 5°C / min using DSC (Suggestive Operation Calorimetry).

[0124] The freezing point of the composition of this disclosure is the temperature at which a peak originating from endothermic heat is observed when the composition is cooled to below its freezing point with liquid nitrogen using DSC, and then heated at a rate of 5°C / min.

[0125] The dielectric constant of the composition disclosed herein is the value observed at a frequency of 1 kHz under conditions of 25°C and 60% humidity, using the capacitance method.

[0126] The kinematic viscosity of the compositions disclosed herein was measured using an Anton Paar SVM3001 kinematic viscometer.

[0127] The dielectric strength of the composition disclosed herein is the dielectric breakdown voltage when a liquid sample is immersed between spherical electrodes adjusted to a predetermined spacing and the voltage is increased at a constant rate. The measurement conditions are as follows: Electrode shape: Spherical (φ12.5 mm) Electrode spacing: 2.5 mm Voltage increase rate: 2 kV / sec Measurement atmosphere: Air (22°C, 57% RH)

[0128] The specific heat of the compositions disclosed herein is the value obtained using DSC under the following conditions: Measuring instrument: Perkin-Elmer differential scanning calorimeter DSC8500 Heating rate: 10°C / min Standard sample: Sapphire (-Al ２ O ３ Atmosphere: Dry nitrogen stream Sample container: Sealed aluminum container

[0129] The thermal conductivity of the compositions disclosed herein is a value obtained by the transient nanowire method.

[0130] The compatibility of the compositions disclosed herein is determined by whether or not they are compatible when mixed with the solvent in question. Here, compatibility means that when the two are mixed, they become a homogeneous state, that is, the phases do not separate.

[0131] 4. Heat transfer apparatus The present disclosure further discloses a heat transfer apparatus comprising a device and a mechanism for transferring heat to or from the device, comprising the composition of the present disclosure.

[0132] Examples of devices include computers, server computers, servers including blade servers; disk arrays / storage systems; storage area networks; network-connected storage; storage communication systems; workstations; routers; telecommunications infrastructure / switches; wired, optical and wireless communication equipment; cell processing equipment; printers; power supplies; displays; optical devices; measurement systems including handheld systems; and military electronic equipment.

[0133] In different terms, the device may be a component, workpiece, assembly, etc., that is cooled, heated, or maintained at a predetermined temperature or temperature range. Examples of such devices include electrical components, mechanical components, and optical components. Specifically, examples include, but are not limited to, microprocessors, wafers used to manufacture semiconductor devices, power control semiconductors, power distribution switches, power transformers, circuit boards, multi-chip modules, packaged or unpackaged semiconductor devices, lasers, chemical reactors, fuel cells, heat exchangers, and electrochemical cells. In some embodiments, the device may include a cooler, a heater, or a combination thereof.

[0134] Semiconductor elements are heat-generating elements mounted in devices, such as CPUs, GPUs, and SSDs. These semiconductor elements are composed of single elements such as silicon and germanium, and compound semiconductors such as gallium arsenide (GaAs), gallium phosphide (GaP), indium phosphide (InP), gallium nitride (GaN), and silicon carbide (SiC).

[0135] If the device is a server computer, one or more logic boards are located within its internal space. A logic board contains numerous heat-generating electronic components, including at least one processor such as a CPU or GPU. In addition, other heat-generating components of the computer may be used, such as chipsets; memory, graphics chips, network chips, RAM, power supplies, daughter cards; and storage drives such as solid-state drives and mechanical hard disks.

[0136] A heat transfer device is a heat transfer device that uses the composition of this disclosure to transfer heat to an object to be heated, and heat is exchanged (transferred) by thermal contact with the object to be heated. For example, removing heat from an object to be heated is cooling, and supplying heat is heating. Different mechanisms may be used depending on the case, but a single heat transfer device may handle both cooling and heating.

[0137] There are no particular limitations on heat transfer devices, and examples include pumps, valves, fluid confinement systems, pressure control systems, coolers, heat exchangers, heat sources, heat sinks, refrigeration systems, active temperature control systems, and passive temperature control systems.

[0138] More specifically, these include temperature-controlled wafer chucks in plasma-enhanced chemical vapor deposition (PECVD) tools, temperature-controlled test heads for die performance testing, temperature-controlled work areas in semiconductor process equipment, thermal shock test bath reservoirs, and constant temperature baths.

[0139] While there is no limit to the temperature range of the composition when using these heat transfer devices, -100 to 100°C is preferred, -90 to 90°C is more preferred, -80 to 90°C is even more preferred, and -70 to 90°C is most preferred. In preferred embodiments of this disclosure, since the kinematic viscosity of the pre-purification composition at -40°C is low, at 2.0 cSt or less, the composition obtained by a process including a predetermined purification treatment of such a pre-purification composition exhibits low kinematic viscosity even at low temperatures of -20°C or below in preferred embodiments, thus having the advantage of being easily applicable to heat transfer devices even in the temperature range of -70 to -60°C.

[0140] The heat transfer object that comes into thermal contact with the heat transfer device is an article, device, or atmosphere that is cooled, heated, or maintained at a temperature to be controlled. Examples of such heat transfer objects include electrical components, mechanical components, and optical components, as well as their processed products and assemblies. Specific examples of heat transfer objects in this disclosure include, but are not limited to, microprocessors, wafers used to manufacture semiconductor devices, power control semiconductors, electrical branch switches, power transformers, circuit boards, multi-chip modules, mounted and unmounted semiconductor devices, chemical reactors, nuclear reactors, fuel cells, lasers, and missile components.

[0141] 5. Heat Transfer Methods This disclosure further discloses heat transfer methods comprising the steps of preparing a device and transferring heat to or from the device using the compositions of this disclosure. The description of the device is the same as that of the “heat transfer device” described above. Here, heat can be transferred by positioning the heat transfer device in thermal contact with the device. When positioned in thermal contact with the device, the heat transfer device removes heat from the device, supplies heat to the device, or maintains the device at a selected temperature or temperature range. The direction of heat flow (from or to the device) is determined by the relative temperature difference between the device and the heat transfer device.

[0142] While embodiments of this disclosure have been described above, this disclosure is not limited to these examples and can be implemented in various forms without departing from the gist of the disclosure.

[0143] The embodiments of the present invention will be described in more detail below based on examples, but the present invention is not limited to these.

[0144] <Comparative Example 1, Examples 1-2> (Preparation of Pre-Purification Composition) A composition containing an HFP dimer was obtained based on the method described in the Journal of Synthetic Organic Chemistry, Japan (1981), Vol. 39, pp. 51-62. The obtained composition was crudely purified by distillation to remove impurities such as HFP trimers, and the crude product was washed with a 1% KOH aqueous solution. The HFP dimer after washing was separated into compounds represented by formula (I) and formula (II) by distillation. The separated HFP dimers were dehydrated using silica gel. After dehydration, the compounds represented by formula (I) and formula (II) were mixed so that the proportions were 99.9% by mass and 0.1% by mass, respectively, to obtain the pre-purification composition.

[0145] <Comparative Example 2, Examples 3-4> (Preparation of composition before purification) A composition containing 1,1,1,2,2,5,5,6,6,6-decafluoro-3-hexene was obtained based on the method described in Russian Journal of Organic Chemistry (2010), 46(9), 1290-1295. The obtained composition was purified by rectification to obtain a compound of 99.9% by mass or more.

[0146] <Comparative Example 3, Examples 5-6> (Preparation of composition before purification) A composition containing 1,1,2,2-tetrafluoro-1-(2,2,2-trifluoroethoxy)ethane was obtained based on the method described in Green Chemistry (2002), 4(1), 60-63. The obtained composition was purified by rectification to obtain a compound of 99.9% by mass or more.

[0147] <Comparative Example 4, Examples 7-8> (Preparation of composition before purification) A composition containing a hexafluoropropylene oxide dimer was obtained based on the method described in Chinese Patent Application Publication No. 1094855560. The obtained composition was purified by rectification to obtain a compound of 99.9% by mass or more.

[0148] <Comparative Example 5, Examples 9-10> (Preparation of composition before purification) A composition containing 1,1,1,2,3,3-hexafluoro-3-[2-(1,1,2,3,3,3-hexafluoropropoxy)ethoxy]propane was obtained based on the method described in Chinese Patent Application Publication No. 113061078. The obtained composition was purified by rectification to obtain a compound of 99.9% by mass or more.

[0149] <Comparative Example 6, Examples 11-12> (Preparation of composition before purification) A composition containing 1,2-bis(1,1,2,2-tetrafluoroethoxy)ethane was obtained based on the method described in Lubrication Science (2011), 23(2), 61-80. The obtained composition was purified by rectification to obtain a compound of 99.9% by mass or more.

[0150] (Measurement of metal and metal ion content in the composition) The content of conductive substances (in this example, we focused particularly on the content of metals and metal ions) in the composition before purification was determined by the following procedure using an inductively coupled plasma mass spectrometer (ICP-MS) (the same procedure was followed for the composition after purification). The measured values ​​are shown in Table 1 below. (1) 2000 g of the composition before purification was poured into a polytetrafluoroethylene (PTFE) beaker, and the beaker was placed on a hot plate at 250°C to allow the volatile components to evaporate. (2) 70% ultra-trace precision nitric acid (manufactured by Wako Pure Chemical Industries) was diluted with ultrapure water to obtain nitric acid with a concentration of approximately 4% by mass, and then approximately 50 mL of this was placed in a PTFE beaker. (3) The PTFE beaker was placed on a hot plate at 150°C for 1 hour to dissolve the metal remaining in the beaker. (4) The amount of metal ions dissolved in the nitric acid was measured using ICP-MS. The amount of metal ions in the nitric acid, the amount of nitric acid, and the amount of the evaporated solution were used to calculate the content of metals and metal ions in the solution. (5) All of the above measurements were performed in a Class 10000 cleanroom with a Koken Co., Ltd. table coach installed, creating a work environment equivalent to Class 1.

[0151] (Measurement of the number of insoluble particles (fine particles) in the composition) The number of particles with a particle size of 5.0 μm or larger, the number of particles with a particle size of 1.0 μm or more and less than 5.0 μm, the number of particles with a particle size of 0.5 μm or more and less than 1.0 μm, and the number of particles with a particle size of 0.3 μm or more and less than 0.5 μm in the composition before purification was measured at a temperature of 23°C using a liquid particle counter (RION KL-22). The same procedure was followed for the composition after purification. All measurement work was carried out in a Class 10000 cleanroom with a table coach manufactured by Koken Co., Ltd. installed, creating a work environment equivalent to Class 1.

[0152] (Measurement of boiling point, freezing point, and kinematic viscosity of the composition before purification) The boiling point was measured using DSC, and the temperature at which a peak originating from endothermic heating was observed when the temperature was raised from 25°C at a rate of 5°C / min was measured. The freezing point was measured using DSC, and the temperature at which a peak originating from endothermic heating was observed when the mixture was cooled to below -150°C (the temperature at which solidification was confirmed) with liquid nitrogen, and then raised at a rate of 5°C / min was measured. The kinematic viscosity at -40°C was measured using an Anton Paar SVM-3001 kinematic viscosity system. The measured values ​​were as follows. <HFP dimer> Kinematic viscosity: 1.009 cSt (-40°C) Freezing point: -94.3°C Boiling point: 49°C <1,1,1,2,3,5,5,6,6,6-Decafluoro-3-Hexene> Kinematic viscosity: 1.750 cSt (-40°C) Boiling point: 49°C <1,1,2,2-Tetrafluoro-1-(2,2,2-Trifluoroethoxy)ethane> Kinematic viscosity: 1.420 cSt (-40°C) Freezing point: -94°C Boiling point: 56°C <Hexafluoropropylene oxide dimer> Freezing point: -125°C Boiling point: 55°C <1,1,1,2,3,3-Hexafluoro-3-[2-(1,1,2,3,3,3-Hexafluoropropoxy)ethoxy]propane> Boiling point: 164°C <1,2-bis(1,1,2,2-tetrafluoroethoxy)ethane> Boiling point: 86°C

[0153] (Purification Process) A multi-stage filtration system was prepared as a filtration device, consisting of unit 1 loaded with filter A and unit B loaded with filter B, connected in series. Filters A and B are as follows: ・Filter A (Ion Clean SL manufactured by Nippon Pall Co., Ltd., filtration area: 0.58 m²) ２ ) ・Filter B (Wurtz Pleats P-Nylon manufactured by Nippon Pall Co., Ltd., pore size: 40 nm, filtration area: 1.2 m²) ２ )

[0154] The composition before purification was placed in a pressure vessel and cooled to -5°C or below. Under a high-purity argon atmosphere, the composition was obtained by pressure filtration to 0.02 MPa using the above-mentioned filtration apparatus. This purification operation was carried out in both cases: when the filtrate receiver was in contact with the outside air (Examples 1, 3, 5, 7, 9, 11) and when the filtrate receiver was isolated from the outside air (Examples 2, 4, 6, 8, 10, 12).

[0155] To reproduce the long-term usage conditions of each composition, the pre-purification compositions of Comparative Examples 1 to 6 and the post-purification compositions of Examples 1 to 12 were refluxed at 80°C for 144 hours using a glass Soxhlet apparatus. The metal and metal ion content of each composition before and after reflux was measured, as well as the number of insoluble particles. The results for the HFP dimer are shown in Table 1. The results for 1,1,1,2,2,5,5,6,6,6-decafluoro-3-hexene are shown in Table 2. The results for 1,1,2,2-tetrafluoro-1-(2,2,2-trifluoroethoxy)ethane are shown in Table 3. The results for the hexafluoropropylene oxide dimer are shown in Table 4. The results for 1,1,1,2,3,3-hexafluoro-3-[2-(1,1,2,3,3,3-hexafluoropropoxy)ethoxy]propane are shown in Table 5. Furthermore, the results for 1,2-bis(1,1,2,2-tetrafluoroethoxy)ethane are shown in Table 6. In Tables 1 to 6, the meaning of each notation is as follows: The "Before Filtering" column for Comparative Examples 1 to 6 shows the measurement results of the unfiltered composition before reflux. The "After Filtering" column for Examples 1 to 12 shows the measurement results of the purified composition before reflux. The "After Heating" column for Comparative Examples 1 to 6 and Examples 1 to 12 shows the measurement results of the purified composition after reflux. n.d: Indicates that the value is below the detection limit.

[0156]

[0157]

[0158]

[0159]

[0160]

[0161]

[0162] The results in Tables 1 to 6 show that the content of conductive substances (especially metals and metal ions) can be reduced by subjecting the pre-purification composition to a predetermined purification process.

Claims

1. A composition containing a fluorine compound and a conductive substance, wherein (1) the fluorine compound is C ６ F １２ (2) A composition comprising a compound represented by, at least one selected from the group consisting of hydrofluoroolefin, perfluoropolyether, hydrofluoroether, and hydrofluoropolyether, wherein the content of the conductive substance is 100 ppm by mass or less with respect to the whole composition.

2. A composition containing a fluorine compound and a conductive substance, wherein (1) the fluorine compound is C ６ F １２ (2) A composition comprising at least one compound selected from the group consisting of a compound represented by , hydrofluoroolefin, perfluoropolyether, hydrofluoroether, and hydrofluoropolyether, wherein the content of insoluble particles with a particle size of 5 μm or more is 10 particles / mL or less.

3. The composition according to claim 1 or 2, wherein the content of the fluorine compound contained in the composition is 60% by mass or more of the total amount of the composition.

4. Above C ６ F １２ The compounds represented by the following formulas (I) and (II): The composition according to claim 1 or 2, wherein the composition is at least one compound selected from the group consisting of compounds represented by .

5. The composition according to item 4, wherein the ratio of the E-isomer to the Z-isomer of the compound represented by formula (I), E / (E+Z), is greater than 0.

5.

6. The composition according to claim 4, wherein the E / (E+Z) of the compound represented by formula (I) is 0.8 to 1.

7. The composition according to claim 4, wherein the E / (E+Z) of the compound represented by formula (I) is 0.97 to 1.

8. The composition according to claim 4 or 5, wherein the content of the compound represented by formula (I) is 85% by mass or more, relative to the total amount of the compound represented by formula (I) and the compound represented by formula (II).

9. (i) C ｍ F ２ｍ and / or C ｎ F （２ｎ－２） [where m is an integer of 4 or more and 12 or less and other than 6 and 9. n is an integer of 4 or more and 12 or less.] (Here, the content of such C ｍ F ２ｍ and / or C ｎ F （２ｎ－２） [where m is an integer of 4 or more and 12 or less and other than 6 and 9. n is an integer of 4 or more and 12 or less.] is 0.0001 to 10 parts by mass with respect to 100 parts by mass of the total amount of the fluorine compounds), (ii) water (Here, the content of such water is 0.0001 to 0.1 parts by mass with respect to 100 parts by mass of the total amount of the fluorine compounds), and / or (iii) fluoride ions (Here, the content of such fluoride ions is 0.0000001 to 5 parts by mass with respect to 100 parts by mass of the total amount of the fluorine compounds), The composition according to any one of claims 1 to 8, further comprising.

10. The composition according to claim 1 or 2, which is a composition for heat transfer fluids.

11. A heat transfer device comprising a device and a mechanism for transferring heat to or from the device, comprising the composition described in claim 1 or 2.

12. A heat transfer method comprising the steps of preparing a device and transferring heat to or from the device using the composition described in claim 1 or 2.

13. The process comprises a step of purifying a composition containing a fluorine compound and a conductive substance to obtain a composition in which the conductive substance is reduced from the composition, (1) the fluorine compound is C ６ F １２ (2) A method for producing a purified composition, wherein the compound is selected from the group consisting of a compound represented by , hydrofluoroolefin, perfluoropolyether, hydrofluoroether, and hydrofluoropolyether, and the purification process is a process using at least one selected from the group consisting of a filtration filter, an ion exchange resin, a metal ion removal filter, a metal ion removal agent, distillation, rectification, centrifugation, and electrostatic adsorption.

14. The method for producing the composition according to claim 13, wherein the purified composition is kept in a sealed environment during the purification process.

15. The method for producing the composition according to claim 13, wherein the composition contains 100 ppm by mass or less of the conductive substance.

16. The method for producing the composition according to claim 13, wherein the conductive material is at least one selected from the group consisting of metals, metal ions, carbon, conductive polymers, and superconducting ceramics.

17. The method for producing the composition according to claim 13, wherein the composition contains 10 or fewer insoluble particles with a particle size of 5 μm or more per mL.

18. A method for producing the composition according to claim 13, wherein the composition has a kinematic viscosity of 2.0 cSt or less at -40°C.

19. A method for producing the composition according to claim 13, wherein the composition has a freezing point of -70°C or lower.

20. A method for producing the composition according to claim 13, wherein the composition has a boiling point of 35 to 180°C.

21. The C ６ F １２ The compound represented by is at least one compound selected from the group consisting of the compounds represented by the following formulas (I) and (II): The method for producing a composition according to claim 13, which is at least one compound selected from the group consisting of the compounds represented by.

22. The method for producing the composition according to claim 21, wherein the content of the compound represented by formula (I) is 85% by mass or more of the total amount of the compound represented by formula (I) and the compound represented by formula (II).

23. The hydrofluoroolefin is given by the following formula (III): R １ R ２ C=CR ３ R ４ (III) is expressed as, where R １ , R ２ , R ３ and R ４ The method for producing the composition according to claim 13, wherein is the same or different hydrogen atom, fluorine atom, or a C1-C3 hydrocarbon group in which hydrogen may be substituted with fluorine, and in formula (III), has one or more hydrogen atoms and one or more fluorine atoms.

24. The perfluoropolyether is given by the following formula (IV): RO-Rf １ Represented as -R' (IV), where R and R' are the same or different, -C ｍ F ２ｍ＋１ A single-valued base represented by , where m is an integer from 1 to 3, and Rf １ is a divalent fluoropolyoxyalkylene group containing two repeating units, wherein the repeating units are: (i) -CFXO-, (wherein X is F or CF ３ (is); (ii) -CF ２ CFXO-(wherein X is F or CF) ３ (is); (iii) - CFXCF ２ O - (wherein X is F or CF) ３ (is); or (iv) -CF ２ CFXCF ２ O - (wherein X is F or CF) ３ A method for producing the composition according to claim 13, wherein the divalent group is represented by ).

25. The hydrofluoroether is represented by the following formula (V): R-O-R'(V), where R is -C ｍ H ｘ F ｙ It is a monovalent group represented by R', where R' is -C ｎ H ａ F ｂ A method for producing the composition according to claim 13, wherein the base is a monovalent base represented by , m and n are integers from 1 to 5 satisfying 4 ≤ m + n ≤ 6, and x, y, a, and b are integers of 0 or greater satisfying the following relationships: x + y = 2m + 1; a + b = 2n + 1; a + x ≥ 1; and b + y ≥ 1; 26. The hydrofluoropolyether is given by the following formula (VI): RO-(R Ｈ ) ｎ Represented as -R' (VI), where R and R' are each independently a C1-C6 hydrocarbon group in which hydrogen may be substituted with fluorine and which may contain an unsaturated bond, (R Ｈ ) ｎ is a divalent polyoxyalkylene group containing a repeating unit, n is an integer of 1 or more, and the repeating unit is: (i) -CHXO- (wherein X is H or CH ３ (is); (ii) -CH ２ CHXO-(wherein X is H or CH) ３ (is); (iii) -CHXCH ２ O-(wherein X is H or CH) ３ (is); or (iv) - CH ２ CHXCH ２ O-(wherein X is H or CH) ３ A method for producing the composition according to claim 13, wherein the divalent group is represented by ).

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