Laser device for skin care and lesion treatment
Patent Information
- Authority / Receiving Office
- WO · WO
- Patent Type
- Applications
- Current Assignee / Owner
- Filing Date
- 2025-04-22
- Publication Date
- 2026-08-13
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Figure KR2025095280_13082026_PF_FP_ABST
Abstract
Description
Laser device for skin cosmetic and lesion treatment
[0001] The present disclosure relates to a laser device for skin cosmetic and lesion treatment.
[0002] Generally, when a conventional laser device has a nanosecond pulse, it has high peak power due to the short pulse width, so a temperature rise occurs when the laser is irradiated onto a material.
[0003] For example, in conventional laser devices, when a laser is irradiated onto the skin or a lesion, a rise in temperature of melanin and blood vessels with a high absorption rate occurs.
[0004] Such conventional laser devices could not efficiently deliver energy when tissue degeneration occurred due to the temperature rise of melanin, and could not deliver high energy to deep areas.
[0005] In addition, conventional laser devices could not safely treat melanin-related lesions due to rapid temperature rise, and could not safely treat capillary-related lesions due to short pulse widths.
[0006] The purpose of the embodiment according to the present disclosure is to provide that, by having low peak power due to the long pulse width, the temperature rise can be reduced, energy can be efficiently delivered, and high energy can be delivered to deep places.
[0007] In addition, the embodiment according to the present disclosure is intended to provide that the intended temperature can be reached through energy control, as it does not cause a steep temperature rise.
[0008] In addition, the embodiments according to the present disclosure are intended to provide a method for improving skin tone and improving skin elasticity through collagen heating.
[0009] In addition, the embodiment according to the present disclosure is intended to provide a method for safely treating melanin-related lesions with a low temperature rise.
[0010] In addition, the embodiment according to the present disclosure is intended to provide a method for safely treating capillary-related lesions due to a long pulse width.
[0011] The problems that this disclosure aims to solve are not limited to those mentioned above, and other unmentioned problems will be clearly understood by a person skilled in the art from the description below.
[0012] A laser device for skin aesthetics and lesion treatment according to one aspect of the present disclosure for achieving the above-described technical problem comprises: an oscillator that emits a pulse laser of 1064 nm; a reflector that reflects the emitted pulse laser of 1064 nm; an amplifier that amplifies the reflected pulse laser of 1064 nm; and a wavelength converter that converts the amplified pulse laser of 1064 nm into a pulse laser of 532 nm, wherein the wavelength converter selectively outputs a pulse laser of 532 nm in the nanosecond range or the microsecond range to the skin or the lesion depending on whether it is located on an optical path between the amplifier and the skin or the lesion.
[0013] In addition, the wavelength converter may be characterized by outputting a pulse laser of 532 nm in the nanosecond range or microsecond range to the skin or the lesion when drawn out from between the transmission elements provided near the reflection element or when drawn into between the transmission elements.
[0014] Additionally, the transmission element may include a first transmission element that transmits the 1064 nm pulse laser; and a second transmission element that transmits the 532 nm pulse laser in the microsecond range.
[0015] Additionally, the wavelength converter may be characterized by converting the amplified 1064 nm pulse laser into a 532 nm pulse laser in the nanosecond range when drawn from between the first transmission element and the second transmission element, and outputting the converted 532 nm pulse laser in the nanosecond range to the skin or the lesion.
[0016] Additionally, when the wavelength converter is inserted between the first transmission element and the second transmission element, the reflection element among the reflection elements located near the amplifier moves to a preset position so that the shutter located near the amplifier is opened, and the high-reflection element located near the shutter reflects the oscillated 1064 nm pulse laser and provides it to the first transmission element.
[0017] In addition, the reflective element among the above reflective elements, which is positioned between the amplifier and the wavelength converter, may be characterized by moving further to a preset position to reflect the reflected 1064 nm pulse laser and provide it to the first transmission element.
[0018] In addition, the second transmission element may be characterized by further outputting a pulse laser of 532 nm in the microsecond range to the skin or the lesion.
[0019] In addition, the reflective element provided near the second transmitting element may be characterized by moving further to a preset position to output a pulse laser of 532 nm in the microsecond range to the skin or the lesion.
[0020] In addition, the second transmission element may be characterized by re-injecting the 1064 nm pulsed laser into the amplifier.
[0021] According to the above-described means for solving the problem of the present disclosure, since low peak power is obtained due to the long pulse width, the temperature rise can be reduced, energy can be efficiently transferred, and high energy can be transferred to deep places, providing the effect.
[0022] In addition, according to the aforementioned means for solving the problem of the present disclosure, since it does not cause a steep temperature rise, it provides the effect of being able to reach an intended temperature through energy control.
[0023] In addition, according to the above-described means for solving the problem of the present disclosure, the effect of improving skin tone and improving skin elasticity through collagen heating is provided.
[0024] In addition, according to the above-described means for solving the problem of the present disclosure, the effect of safely treating melanin-related lesions with a low temperature rise is provided.
[0025] In addition, according to the aforementioned means for solving the problem of the present disclosure, the effect of safely treating capillary-related lesions due to a long pulse width is provided.
[0026] The effects of the present disclosure are not limited to those mentioned above, and other unmentioned effects will be clearly understood by a person skilled in the art from the description below.
[0027] FIG. 1 illustrates the configuration of a laser device according to the present disclosure.
[0028] FIG. 2 illustrates, as an example, the process of outputting a pulse laser of 1064 nm in the nanosecond range using a laser device according to the present disclosure.
[0029] FIG. 3 illustrates, as an example, the process of outputting a pulse laser of 532 nm in the nanosecond range using a laser device according to the present disclosure.
[0030] FIG. 4 illustrates, as an example, the process of outputting a pulse laser of 532 nm in the microsecond range using a laser device according to the present disclosure.
[0031] Throughout this disclosure, the same reference numerals denote the same components. This disclosure does not describe all elements of the embodiments, and general content in the art to which this disclosure pertains or content that overlaps between embodiments is omitted. The terms 'part, module, component, block' as used in the specification may be implemented in software or hardware, and depending on the embodiments, a plurality of 'parts, modules, components, blocks' may be implemented as a single component, or a single 'part, module, component, block' may include a plurality of components.
[0032] Throughout the specification, when a part is described as being "connected" to another part, this includes not only cases where they are directly connected but also cases where they are indirectly connected, and indirect connections include connections made via a wireless communication network.
[0033] Furthermore, when it is stated that a part "includes" a certain component, this means that, unless specifically stated otherwise, it does not exclude other components but may include additional components.
[0034] Throughout the specification, when it is stated that a component is located "on" another component, this includes not only cases where a component is in contact with another component, but also cases where another component exists between the two components.
[0035] Terms such as "first," "second," etc., are used to distinguish one component from another, and the components are not limited by the aforementioned terms.
[0036] Singular expressions include plural expressions unless there is an obvious exception in the context.
[0037] In each step, identification codes are used for convenience of explanation and do not describe the order of the steps; the steps may be performed differently from the specified order unless a specific order is clearly indicated in the context.
[0038] The operating principles and embodiments of the present disclosure will be described below with reference to the attached drawings.
[0039] A laser device for skin aesthetics and lesion treatment according to the present disclosure comprises: an oscillator that generates a pulsed laser of 1064 nm; a reflector that reflects the generated pulsed laser of 1064 nm; an amplifier that amplifies the reflected pulsed laser of 1064 nm; and a wavelength converter that converts the amplified pulsed laser of 1064 nm into a pulsed laser of 532 nm, wherein the wavelength converter can output a pulsed laser of 532 nm to the skin or lesion when it is drawn out from between a transmission element provided near the reflector or when it is drawn into between the transmission elements.
[0040] Below, we will examine laser devices for skin aesthetics and lesion treatment in detail.
[0041] FIG. 1 illustrates the configuration of a laser device according to the present disclosure. FIG. 2 illustrates, as an example, the process of outputting a pulsed laser of 1064 nm in the nanosecond range using a laser device according to the present disclosure.
[0042] Referring to FIGS. 1 and 2, the laser generating device (1000) may include an oscillator (100), a reflective element (200), an amplifier (300), a wavelength converter (400), and a transmitting element (500).
[0043] The oscillator (100) can generate a pulsed laser of 1064 nm. For example, the oscillator (100) may include an Oscillator Pump Chamber, and energy may be stored in the Nd:YAG of the Oscillator Pump Chamber.
[0044] At this time, the first shutter (101) can temporarily block the beam. Additionally, the polarizing element (102) can separate light in a polarized state or convert light in an unpolarized state into light in a polarized state. For example, the polarizing element (102) may be a polarizer. Such a polarizer can make an unpolarized beam into a linearly polarized state in a specific direction, or transmit only the linearly polarized component of an unpolarized or randomly polarized beam in a specific direction. Additionally, the wave plate (103) can change the polarization state of the light. For example, the wave plate (103) may be a 0.25 lambda waveplate. Here, the 0.25 lambda waveplate is an element that changes the polarization state and can rotate the polarized beam.
[0045] These polarizing elements (102) and wave plates (103) can cross polarization and block light so that it does not travel back and forth into the oscillator (100). Therefore, even if energy is stored in the Nd:YAG of the Oscillator Pump Chamber, a pulsed laser of 1064 nm cannot be generated.
[0046] The optical switching controller (104) can convert polarization so that light can be transmitted without optical polarization loss when it receives a preset voltage from a power supply at a preset time. For example, the optical switching controller (104) may be a Pockels cell. The first high-reflection element (105) may reflect light using high reflectivity. For example, the first high-reflection element (105) may be a High Reflector. At this time, the oscillator (100) may store energy in Nd:YAG and then generate a pulsed laser of 1064 nm.
[0047] The output element (106) can provide a useful 1064 nm pulsed laser among 1064 nm pulsed lasers to the first reflecting element (210) using a high transmission rate. For example, the output element (106) may be an output coupler that outputs a beam within the laser cavity. The second reflecting element (220) may provide the 1064 nm pulsed laser reflected by the first reflecting element (210) to the amplifier (300). For example, the first reflecting element (210) and the second reflecting element (220) may be steering mirrors that have high angular resolution and quickly and precisely adjust the tilt. Here, the steering mirror is used to change the direction of the beam and can undergo total reflection at 45 degrees.
[0048] The amplifier (300) can output a reflected 1064 nm pulsed laser as a 1064 nm pulsed laser in the nanosecond range. For example, the amplifier (300) may be an amplifier that amplifies a beam generated through the oscillator (100).
[0049] FIG. 3 illustrates, as an example, the process of outputting a pulsed laser of 532 nm in the nanosecond range using a laser device according to the present disclosure. FIG. 4 illustrates, as an example, the process of outputting a pulsed laser of 532 nm in the microsecond range using a laser device according to the present disclosure.
[0050] Referring to FIG. 3, the oscillator (100) can generate a pulsed laser of 1064 nm. For example, the oscillator (100) may include an Oscillator Pump Chamber, and energy may be stored in the Nd:YAG of the Oscillator Pump Chamber.
[0051] At this time, the first shutter (101) can temporarily block the beam. Additionally, the polarizing element (102) can separate light in a polarized state or convert light in an unpolarized state into light in a polarized state. For example, the polarizing element (102) may be a polarizer. Such a polarizer can make an unpolarized beam into a linearly polarized state in a specific direction, or transmit only the linearly polarized component of an unpolarized or randomly polarized beam in a specific direction. Additionally, the wave plate (103) can change the polarization state of the light. For example, the wave plate (103) may be a 0.25 lambda waveplate. Here, the 0.25 lambda waveplate is an element that changes the polarization state and can rotate the polarized beam.
[0052] These polarizing elements (102) and wave plates (103) can cross polarization and block light so that it does not travel back and forth into the oscillator (100). Therefore, even if energy is stored in the Nd:YAG of the Oscillator Pump Chamber, a pulsed laser of 1064 nm cannot be generated.
[0053] The optical switching controller (104) can convert polarization so that light can be transmitted without optical polarization loss when it receives a preset voltage from a power supply at a preset time. For example, the optical switching controller (104) may be a Pockels cell. The first high-reflection element (105) may reflect light using high reflectivity. For example, the first high-reflection element (105) may be a High Reflector. At this time, the oscillator (100) may store energy in Nd:YAG and then generate a pulsed laser of 1064 nm.
[0054] The output element (106) can provide a useful 1064 nm pulsed laser among 1064 nm pulsed lasers to the first reflecting element (210) using a high transmission rate. For example, the output element (106) may be an output coupler that outputs a beam within the laser cavity. The second reflecting element (220) may provide the 1064 nm pulsed laser reflected by the first reflecting element (210) to the amplifier (300). For example, the first reflecting element (210) and the second reflecting element (220) may be steering mirrors that have high angular resolution and quickly and precisely adjust the tilt. Here, the steering mirror is used to change the direction of the beam and can undergo total reflection at 45 degrees.
[0055] The amplifier (300) can output a reflected 1064 nm pulsed laser as a 1064 nm pulsed laser in the nanosecond range. For example, the amplifier (300) may be an amplifier that amplifies a beam generated through the oscillator (100).
[0056] A wavelength converter (400) can be drawn from between a first transmission element (511) and a second transmission element (512) provided near a reflection element (200). For example, the wavelength converter (400) may be a green KTP laser having a wavelength width of 532 nm and a wavelength length of 1 to 50 msec, which converts laser emission into various modes. Here, when the wavelength converter (400) is drawn from between the first transmission element (511) and the second transmission element (512), it can convert an amplified 1064 nm pulsed laser into a 532 nm pulsed laser in the nanosecond range. At this time, the wavelength converter (400) can output a 532 nm pulsed laser in the nanosecond range to the skin (S) or lesion (L). Such a wavelength converter (400) can precisely irradiate a 532 nm pulsed laser in the nanosecond range onto a desired area of skin (S) or lesion (L) while minimizing damage to surrounding tissues other than blood vessels.
[0057] Referring to FIG. 4, a wavelength converter (400) can be inserted between a first transmission element (511) and a second transmission element (512). At this time, the first transmission element (511) can transmit a pulsed laser of 1064 nm. Additionally, the second transmission element (512) can transmit a pulsed laser of 532 nm. For example, the first transmission element (511) and the second transmission element (512) may be KTP mirrors.
[0058] Here, when the wavelength converter (400) is inserted between the first transmission element (511) and the second transmission element (512), the second reflection element (220) provided near the amplifier (300) among the reflection elements can be moved to a preset position so that the second shutter (600) provided near the amplifier (300) is opened. At this time, the second shutter (600) can temporarily block the beam.
[0059] Here, the second high-reflection element (700) provided near the second shutter (600) can reflect the oscillating 1064 nm pulsed laser and provide it to the amplifier (300). For example, the second high-reflection element (700) may be a High Reflector. Additionally, among the reflection elements (811, 812), the third reflection element (812) provided near the amplifier (300) and the wavelength converter (400) may be moved further to a preset position to reflect the 1064 nm pulsed laser amplified through the amplifier (300) and provide it to the first transmission element (511). For example, the third reflection element (812) may be a Steering Mirror. In this case, the Steering Mirror is used to change the direction of the beam and can perform total reflection at 45 degrees.
[0060] Additionally, the first transmission element (511) transmits a pulsed laser of 1064 nm, the second transmission element (512) blocks a pulsed laser of 1064 nm, the fourth reflection element (811) reflects the pulsed laser of 1064 nm transmitted by the first transmission element (511), and the third reflection element (812) can cause the pulsed laser of 1064 nm reflected by the fourth reflection element (811) to be incident back onto the amplifier (300). This process can be performed while energy is supplied to the amplifier (300). Here, the energy may be energy supplied to a crystal of Nd:YAG. At this time, the energy source may be a flash lamp or a laser diode. For example, if the operating time of the flash lamp or laser diode is 50 us or 200 us, a pulsed laser of 532 nm with a pulse width equal to the time excluding the time during which the pulse is formed can be oscillated.
[0061] Additionally, the wavelength converter (400) can convert a 1064 nm pulsed laser transmitted through the first transmission element (511) into a 532 nm pulsed laser in the microsecond range. At this time, the second transmission element (512) can transmit the 532 nm pulsed laser in the microsecond range and output it to the skin (S) or lesion (L). Thus, the wavelength converter (400) can precisely irradiate the 532 nm pulsed laser in the microsecond range to a desired area of the skin (S) or lesion (L) while minimizing damage to surrounding tissues other than blood vessels.
[0062] Additionally, the fifth reflective element (912), which is provided within the output path of the second transmission element (512) among the reflective elements (911, 912), can be moved further to a preset position to output a pulse laser of 532 nm in the microsecond range transmitted through the second transmission element (512) to the skin (S) or lesion (L). Here, the sixth reflective element (911) can reflect the pulse laser of 532 nm in the microsecond range transmitted through the second transmission element (512) and provide it to the fifth reflective element (912). At this time, the fifth reflective element (912) can output the pulse laser of 532 nm in the microsecond range reflected by the sixth reflective element (911) to the skin (S) or lesion (L).
[0063] Accordingly, the laser device for skin aesthetics and lesion treatment according to the present disclosure has low peak power due to the long pulse width, so it can lower the temperature rise, efficiently deliver energy, and deliver high energy to deep areas.
[0064] In addition, the laser device for skin aesthetics and lesion treatment according to the present disclosure does not cause a steep temperature rise, so the intended temperature can be reached through energy control.
[0065] In addition, the laser device for skin beauty and lesion treatment according to the present disclosure can improve skin tone and improve skin elasticity through collagen heating.
[0066] In addition, the laser device for skin aesthetics and lesion treatment according to the present disclosure can safely treat melanin-related lesions with a low temperature rise.
[0067] In addition, the laser device for skin aesthetics and lesion treatment according to the present disclosure can safely treat capillary-related lesions due to its long pulse width.
[0068] At least one component may be added or removed in response to the performance of the components illustrated in FIGS. 1 to 4. In addition, it will be readily understood by those skilled in the art that the relative positions of the components may be changed in response to the performance or structure of the system.
[0069] As described above, the disclosed embodiments have been explained with reference to the attached drawings. Those skilled in the art will understand that the present disclosure may be practiced in forms different from the disclosed embodiments without changing the technical spirit or essential features of the present disclosure. The disclosed embodiments are illustrative and should not be interpreted restrictively.
Claims
An oscillator that generates a pulsed laser of 1.1064 nm; A reflective element that reflects the above-mentioned 1064 nm pulsed laser; An amplifier for amplifying the reflected 1064 nm pulse laser; and It includes a wavelength converter that converts the amplified 1064 nm pulsed laser into a 532 nm pulsed laser, The above wavelength converter is, A laser device for skin cosmetic and lesion treatment, characterized by selectively outputting a pulsed laser of 532 nm in the nanosecond or microsecond range to the skin or lesion depending on whether it is located on the optical path between the amplifier and the skin or lesion.
2. In Paragraph 1, The above wavelength converter is, A laser device for skin beauty and lesion treatment, characterized by outputting a pulse laser of 532 nm in the nanosecond range or microsecond range to the skin or lesion when drawn out from between a transmission element provided near the reflection element or when introduced between the transmission elements.
3. In Paragraph 2, The above-mentioned transmission element is, A first transmission element that transmits the above 1064 nm pulsed laser; and A laser device for skin cosmetic and lesion treatment comprising a second transmission element that transmits a pulse laser of 532 nm in the microsecond range.
4. In Paragraph 3, The above wavelength converter is, When drawn from between the first transmission element and the second transmission element, The above amplified 1064 nm pulsed laser is converted into a 532 nm pulsed laser in the nanosecond range, and A laser device for skin cosmetic and lesion treatment, characterized by outputting a pulsed laser of 532 nm in the converted nanosecond range to the skin or the lesion.
5. In Paragraph 3, When the above wavelength converter is introduced between the first transmission element and the second transmission element, Among the above-mentioned reflective elements, the reflective element located near the amplifier moves to a preset position so that the shutter located near the amplifier is opened, and A laser device for skin beauty and lesion treatment, characterized in that a high-reflection element provided near the shutter reflects the oscillated 1064 nm pulsed laser and provides it to the first transmission element.
6. In Paragraph 5, Among the above-mentioned reflective elements, the reflective element provided between the amplifier and the wavelength converter is, A laser device for skin aesthetics and lesion treatment, characterized by moving further to a preset position to reflect the reflected 1064 nm pulsed laser and provide it to the first transmission element.
7. In Paragraph 5, The above second transmission element is, A laser device for skin cosmetic and lesion treatment, characterized by further outputting a pulse laser of 532 nm in the microsecond range to the skin or lesion.
8. In Paragraph 7, A reflective element provided near the second transmitting element is, A laser device for skin aesthetics and lesion treatment, characterized by moving further to a preset position to output a pulse laser of 532 nm in the microsecond range to the skin or the lesion.
9. In Paragraph 7, The above second transmission element is, A laser device for skin cosmetic and lesion treatment, characterized by re-injecting the above 1064 nm pulsed laser into the above amplifier.