Isotope battery and manufacturing method therefor

Abstract

Provided is an isotope battery comprising: a first conductive semiconductor layer; radiation sources, provided on the first conductive semiconductor layer, having the form in at least parts of a droplet; and a second conductive semiconductor layer facing the first conductive semiconductor layer with the radiation sources interposed therebetween. Use of the isotope battery and manufacturing method for same of the present invention allows mass production using a simple process with no waste of costly material.

Description

Isotope battery and method of manufacturing the same

[0001] The present invention relates to an isotope battery and a method for manufacturing the same, and more specifically, to an isotope battery and a method for manufacturing the same that can be mass-produced through a simple process without wasting expensive materials.

[0002] This application claims the benefit of priority based on Korean Patent Application No. 10-2025-0013666 dated February 4, 2025 and Korean Patent Application No. 10-2026-0020827 dated February 2, 2026, and all contents disclosed in the documents of said Korean patent applications are incorporated herein as part of this specification.

[0003] Radiation emitted by radioactive isotopes can be absorbed through the surface of a pn junction semiconductor and converted into electrical energy. Electron-hole pairs are generated in the space charge region within the pn junction semiconductor by the radiation, and the carriers generated therein exhibit voltage-current characteristics. Nuclear battery units utilizing these properties have the advantage of being able to supply power stably for a long period. Since radiation sources that emit radiation are made of very expensive materials, a method to reduce unnecessary waste is required.

[0004] The first technical objective of the present invention is to provide an isotope battery that can be mass-produced through a simple process without wasting expensive materials.

[0005] The second technical objective of the present invention is to provide a method for manufacturing an isotope battery that can be mass-produced through a simple process without wasting expensive materials.

[0006] To achieve the first technical objective, the present invention provides an isotope cell comprising: a first conductivity type semiconductor layer; a radiation source provided on the first conductivity type semiconductor layer and having at least partially in the form of a droplet; and a second conductivity type semiconductor layer facing the first conductivity type semiconductor layer with the radiation source in between.

[0007] In some embodiments, the first conductive semiconductor layer is a flat plane, and the radiation source may have a contact angle greater than 90 degrees with the first conductive semiconductor layer.

[0008] In some embodiments, the first conductive semiconductor layer is a flat plane, and the radiation source may have a contact angle less than 90 degrees with the first conductive semiconductor layer.

[0009] In some embodiments, the first conductive semiconductor layer has a concave pit, and the radiation source may have a shape that fills the pit and protrudes over the pit.

[0010] In some embodiments, the radiation source may have at least a partially elliptical surface.

[0011] In some embodiments, the radiation source may have a contact angle greater than 90 degrees with the flat surface of the first conductive semiconductor layer.

[0012] In some embodiments, the isotope cell may further include an additional second conductivity semiconductor layer below the first conductivity semiconductor layer.

[0013] In some embodiments, the first conductive semiconductor layer may have a substantially constant thickness.

[0014] In some embodiments, the isotope cell may further include an additional first conductivity semiconductor layer on top of the second conductivity semiconductor layer facing the first conductivity semiconductor layer with the radiation source in between.

[0015] In some embodiments, the isotope cell may further include a photon generating layer between the radiation source and the first conductive semiconductor layer.

[0016] In some embodiments, the upper surface of the radiation source comprises an elliptical surface, and the photon generating layer may extend to the upper surface of the radiation source and cover the elliptical surface.

[0017] To achieve the second technical objective, the present invention provides a method for manufacturing an isotope battery comprising the steps of: preparing a radiation source slurry containing a radiation source; distributing the radiation source slurry in the form of droplets on a semiconductor substrate including a first conductive semiconductor layer; curing the radiation source slurry distributed in the form of droplets; and forming a second conductive semiconductor layer on the cured radiation source.

[0018] In some embodiments, in the step of distributing the radiation source slurry in the form of droplets, the radiation source slurry may be discharged onto the semiconductor substrate in the form of droplets with a diameter of about 10 μm to about 10 mm.

[0019] In some embodiments, in the step of distributing the radiation source slurry in the form of droplets, the radiation source slurry is ejected from a nozzle in the form of droplets, the ejected droplets form a free surface over the entire surface area, and then the droplets can be settled on the semiconductor substrate.

[0020] In some embodiments, the viscosity of the radiation source slurry may be about 0.5 cP to about 2000 cP at 25°C.

[0021] By using the isotope battery and the method for manufacturing the same according to the present invention, it is possible to mass-produce them through a simple process without wasting expensive materials.

[0022] The effects obtainable from the exemplary embodiments of the present invention are not limited to those mentioned above, and other unmentioned effects can be clearly derived and understood by those skilled in the art to which the exemplary embodiments of the present disclosure belong from the following description. That is, unintended effects resulting from the implementation of the exemplary embodiments of the present disclosure can also be derived by those skilled in the art from the exemplary embodiments of the present disclosure.

[0023] FIG. 1 is a side view showing an isotope cell according to one embodiment of the present invention.

[0024] FIGS. 2a to 2d are schematic plan views showing the arrangement of radiation sources in an isotope cell according to embodiments of the present invention.

[0025] Figure 3 is a side view showing an isotope cell with a contact angle θ smaller than 90 degrees.

[0026] FIGS. 4a to 6 are side views showing isotope cells according to other embodiments of the present invention.

[0027] FIGS. 7a and 7b are schematic plan views showing the shape and arrangement of a radiation source in the isotope cell according to embodiments of the present invention.

[0028] FIG. 8 is a flowchart illustrating a method for manufacturing an isotope battery according to one embodiment of the present invention.

[0029] FIGS. 9a to 9d are schematic side views showing the method of manufacturing an isotope battery in steps.

[0030] FIG. 10 is a flowchart showing a method for manufacturing an isotope battery according to an embodiment described with reference to FIG. 4a.

[0031] FIGS. 11a to 11e are schematic side views illustrating the method of manufacturing the above-mentioned isotope battery in steps.

[0032] Hereinafter, preferred embodiments of the concept of the present invention will be described in detail with reference to the accompanying drawings. However, embodiments of the concept of the present invention may be modified in various different forms, and the scope of the concept of the present invention should not be interpreted as being limited by the embodiments described below. It is preferable to interpret the embodiments of the concept of the present invention as being provided to more completely explain the concept of the present invention to those with average knowledge in the art. Identical reference numerals denote identical elements throughout. Furthermore, various elements and areas in the drawings are depicted schematically. Accordingly, the concept of the present invention is not limited by the relative sizes or spacing depicted in the accompanying drawings.

[0033] Terms such as first, second, etc. may be used to describe various components, but said components are not limited by said terms. These terms are used solely for the purpose of distinguishing one component from another. For example, without departing from the scope of the concept of the present invention, the first component may be named the second component, and conversely, the second component may be named the first component.

[0034] The terms used in this application are used merely to describe specific embodiments and are not intended to limit the concept of the invention. The singular expression includes the plural expression unless the context clearly indicates otherwise. In this application, expressions such as “comprising” or “having” are intended to indicate the existence of the features, number, steps, actions, components, parts, or combinations thereof described in the specification, and should be understood as not precluding the existence or addition of one or more other features, numbers, actions, components, parts, or combinations thereof.

[0035] Unless otherwise defined, all terms used herein, including technical and scientific terms, have the same meaning as commonly understood by those skilled in the art to which the concept of the present invention pertains. Furthermore, it will be understood that commonly used terms, such as those defined in advance, should be interpreted as having meanings consistent with their intent in the context of the relevant technology, and should not be interpreted in an overly formal sense unless explicitly defined herein.

[0036] Where an embodiment can be implemented differently, a specific process sequence may be performed differently from the order described. For example, two processes described in succession may be performed substantially simultaneously or in the reverse order of the description.

[0037] In the accompanying drawings, variations of the depicted shapes may be expected, for example, depending on manufacturing technology and / or tolerances. Accordingly, embodiments of the present invention should not be interpreted as being limited to specific shapes of the areas depicted herein, but should include, for example, variations in shape resulting from the manufacturing process. All terms "and / or" used herein include each of the mentioned components and all combinations of one or more thereof. Additionally, the term "substrate" as used herein may refer to the substrate itself, or a laminated structure including the substrate and a certain layer or film formed on its surface. Furthermore, the term "surface of the substrate" in this specification may refer to the exposed surface of the substrate itself, or the outer surface of a certain layer or film formed on the substrate.

[0038]

[0039] (1st embodiment)

[0040] FIG. 1 is a side view showing an isotope cell (1) according to one embodiment of the present invention. FIG. 2a is a schematic plan view showing the arrangement of a radiation source (130) in the isotope cell (1) according to one embodiment of the present invention.

[0041] Referring to FIGS. 1 and FIGS. 2a, radiation sources (130) may be disposed on a first conductive semiconductor layer (110a). The radiation sources (130) may have at least partially droplet forms. Here, droplet forms may refer to the form of a free surface that a fluid having any surface tension and viscosity may have.

[0042] In FIG. 2a, the radiation source (130) is shown as being arranged in a grid at regular intervals, but the present invention is not limited thereto. In some embodiments, the radiation source (130) may be randomly placed on the first conductive semiconductor layer (110a).

[0043] In some embodiments, the radiation source (130) may partially contact the first conductive semiconductor layer (110a). The portion of the first conductive semiconductor layer (110a) in contact with the radiation source (130) may be substantially flat. In some embodiments, a portion of the surface of the radiation source (130) may have an elliptical shape.

[0044] In some embodiments, the radiation source (130) may include a radioactive isotope that emits beta rays. For example, the radiation source (130) may be tritium ( 3 H, tritium), calcium-45( 45 Ca), nickel-63 63 Ni), copper-67 67 Cu), strontium-90 ( 90 Sr), promethium-147( 147 Pm), osmium-194(194 OS), Thulium-171( 171 Tm), thallium-204( 204 Tl), tantalum-182( 182 Ta), cadmium-115( 115 Cd), cadmium-113( 113 Cd), germanium-75( 75 Ge), cerium-141( 141 Ce), cerium-144( 144 Ce) and tungsten-185( 185 It may include one or more selected from the group consisting of W). However, the present invention is not limited to these.

[0045] In some embodiments, the radiation source (130) may include a radioactive isotope that emits alpha rays. For example, the radiation source (130) may be americium-241 ( 241 Am), americium-243( 243 Am), polonium-209( 209 Po), polonium-210( 210 Po), plutonium-238( 238 Pu), Plutonium-239 ( 239 Pu), curium-242( 242 Cm), curium-244( 244 Cm), curium-249( 249 Cm), promethium-147( 147 Pm), uranium-238( 238 U), thorium-232( 232 Th), Radium-226( 226 Ra), bismuth-210( 210Bi), neptunium-237( 237 Np), europium-152( 152 Eu), Francium-223 223 Fr), astatine-210( 210 At), protactinium-231( 231 Pa), einsteinium-253( 253 Es), californium-252( 2520 Cf), and berkelium-249( 249 It may include one or more selected from the group consisting of Bk). However, the present invention is not limited to these.

[0046] In some embodiments, the radiation source (130) may come into contact with the first conductive semiconductor layer (110a) with a predetermined contact angle θ. In some embodiments, the contact angle θ may be greater than 90 degrees. In some embodiments, the first conductive semiconductor layer (110a) is substantially flat, and the radiation source (130) may have a contact angle θ greater than 90 degrees with the first conductive semiconductor layer (110a).

[0047] As illustrated in FIGS. 1 and 3, the contact angle can be defined as the angle formed by the tangent of the radiation source (130) and the surface of the first conductive semiconductor layer (110a) at the edge of the boundary where the surface of the first conductive semiconductor layer (110a) and the radiation source (130) come into contact. The concept of such a contact angle is well defined in related technical fields such as surface engineering.

[0048] In some embodiments, the contact angle θ between the radiation source (130) and the first conductive semiconductor layer (110a) may be from about 100 degrees to about 160 degrees. In some embodiments, the contact angle θ between the radiation source (130) and the first conductive semiconductor layer (110a) may be from about 100 degrees to about 160 degrees, from about 105 degrees to about 155 degrees, from about 110 degrees to about 150 degrees, from about 115 degrees to about 145 degrees, from about 120 degrees to about 140 degrees, from about 125 degrees to about 135 degrees, or a range between any two of these values.

[0049] FIG. 2b is a schematic plan view showing the arrangement of a radiation source (130) in the isotope cell (1) according to one embodiment of the present invention.

[0050] The radiation source (130) may be arranged according to a predetermined rule. In some embodiments, the radiation source (130) may be positioned so that each center is located at the vertex of a series of virtual equilateral triangles.

[0051] By arranging the center of the above radiation source (130) to be located at the vertex of a virtual equilateral triangle, the number of radiation sources (130) that can be accommodated per unit area can be maximized.

[0052] FIG. 2c is a schematic plan view showing the arrangement of a radiation source (130) in the isotope cell (1) according to another embodiment of the present invention.

[0053] Referring to FIG. 2c, each center of the radiation source (130) may be arranged to be located at the vertices of a series of imaginary isosceles triangles. As in FIG. 2b, each center of the radiation source (130) may not necessarily be located at the vertices of a series of imaginary equilateral triangles.

[0054] In some embodiments, the triangle in which each center of the radiation source (130) is placed may be a triangle having some different shape. Accordingly, the radiation source (130) may be arranged somewhat irregularly.

[0055] FIG. 2d is a schematic plan view showing the arrangement of a radiation source (130) in the isotope cell (1) according to another embodiment of the present invention.

[0056] Referring to FIG. 2d, the radiation source (130) may be randomly placed on the first conductive semiconductor layer (110a). In some embodiments, the number density of the radiation source (130) per unit area of ​​the first conductive semiconductor layer (110a) may be substantially constant depending on the location.

[0057] In some other embodiments, the contact angle θ may be smaller than 90 degrees. FIG. 3 is a side view showing an isotope cell (1a) with a contact angle θ smaller than 90 degrees. Referring to FIG. 3, the first conductive semiconductor layer (110a) is substantially flat, and the radiation source (130) may have a contact angle θ smaller than 90 degrees with the first conductive semiconductor layer (110a).

[0058] In some embodiments, the contact angle θ between the radiation source (130) and the first conductive semiconductor layer (110a) may be from about 20 degrees to about 80 degrees. In some embodiments, the contact angle θ between the radiation source (130) and the first conductive semiconductor layer (110a) may be from about 20 degrees to about 80 degrees, from about 25 degrees to about 75 degrees, from about 30 degrees to about 70 degrees, from about 35 degrees to about 65 degrees, from about 40 degrees to about 60 degrees, from about 45 degrees to about 55 degrees, or a range between any two of these values.

[0059] The radiation source (130) can be formed by placing a radiation source slurry having a predetermined viscosity in the form of a droplet on a substrate (10). The droplet of the radiation source slurry placed on the substrate (10) may be placed on the substrate (10) with a predetermined contact angle θ depending on surface tension, viscosity, wetting property with the substrate (10), etc. For example, if the surface tension and / or viscosity of the droplet of the radiation source slurry are relatively high, the contact angle θ may be greater than 90 degrees. Conversely, if the surface tension and / or viscosity of the droplet of the radiation source slurry are relatively low, the contact angle θ may be smaller than 90 degrees.

[0060] If the wettability of the droplet of the radiation source slurry with the substrate (10) is relatively high, the contact angle θ may be smaller than 90 degrees. Conversely, if the wettability of the droplet of the radiation source slurry with the substrate (10) is relatively low, the contact angle θ may be larger than 90 degrees.

[0061] Referring to FIGS. 1 to 3, the first conductivity type semiconductor layer (110a) may be doped with first conductivity type dopants within the substrate (10). In some embodiments, the first conductivity type semiconductor layer (110a) may have a substantially constant thickness.

[0062] The above-described material (10) may include, for example, a III-V semiconductor material. The III-V semiconductor material may include InAlP, InGaP, InAlGaP, ZnSe, AlAs, AlAsP, or yttria-stabilized zirconia (YSZ).

[0063] In some embodiments, the substrate (10) may include a diamond substrate, a SiC substrate, a GaN substrate, a Bi2O3 / GeO2 substrate, a Sm2O3 / Bi2O3 / GeO2 substrate, a Sm2O3 / Bi2O3 / B2O3 substrate, a Sm2O3 / Bi2O3 / GeO2 / B2O3 substrate, a sapphire substrate, or a combination thereof, and these may be undoped substrates.

[0064] In some other embodiments, the substrate (10) may include a diamond substrate, a SiC substrate, a GaN substrate, a Bi2O3 / GeO2 substrate, a Sm2O3 / Bi2O3 / GeO2 substrate, a Sm2O3 / Bi2O3 / B2O3 substrate, a Sm2O3 / Bi2O3 / GeO2 / B2O3 substrate, a sapphire substrate, or a combination thereof, and these may be substrates doped with a dopant.

[0065] In some other embodiments, the above description (10) may have the chemical formula AMO3 (wherein A is one or more selected from the group consisting of La, Ba, Sr, and K, and M is one or more selected from the group consisting of Al, In, Ga, Ti, Sn, Hf, Ta, and Zr).

[0066] Specifically, the above material (10) is BaSnO3, BaHfO3, BaZrO3, BaHf 1-x Ti x O3(here 0 <x<1), Ba 1-x La x SnO3(here 0 <x<1), Bi4Ge3O 12 , Al2O3, Y2O3, La2O3, Ga2O3, Bi2O3, ZrO2, HfO2, Ta2O5, TiO2, LaInO3, LaGaO3, SrZrO3, SrHfO3, SrTaO7, LaIn 1-x Ga x O3(here 0 <x<1), LaGaO3, SrTiO3, KTaO3, HfSiO4, Ta3Ti2O xIt may include one or more selected from the group consisting of and LaAlO3 (where 0 <x<1).

[0067] In some embodiments, the substrate (10) may include a semiconductor substrate. In some embodiments, the substrate (10) may include an insulating substrate.

[0068] In some embodiments, the first conductivity semiconductor layer (110a) may comprise a metal oxide having a bandgap energy of 2.7 eV or more. In some embodiments, the metal oxide may have the chemical formula AMO3 (wherein A is one or more selected from the group consisting of La, Ba, Sr, and K, and M is one or more selected from the group consisting of Al, In, Ga, Ti, Sn, Hf, Ta, and Zr).

[0069] Specifically, the metal oxides are BaSnO3, BaHfO3, BaZrO3, and BaHf 1-x Ti x O3(here 0 <x<1), Ba 1-x La x SnO3(here 0 <x<1), Bi4Ge3O 12 , Al2O3, Y2O3, La2O3, Ga2O3, Bi2O3, ZrO2, HfO2, Ta2O5, TiO2, LaInO3, LaGaO3, SrZrO3, SrHfO3, SrTaO7, LaIn 1-x Ga x O3(here 0 <x<1), LaGaO3, SrTiO3, KTaO3, HfSiO4, Ta3Ti2O x It may include one or more selected from the group consisting of and LaAlO3 (where 0 <x<1).

[0070] The metal oxide is not only stable even in high temperature and high humidity environments, but also has high carrier mobility, so it can efficiently absorb radiation emitted from a radiation source (130) and provide high energy conversion efficiency. In addition, there are no inelastic collisions during carrier movement, so there is no energy loss and it is advantageous for heat dissipation. For example, the metal oxide is 45 cm 2 / (V·s) or more, 80 cm 2 / (V·s) or more, 120 cm 2 / (V·s) or more, furthermore 300 cm 2 It can have a high carrier mobility of / (V·s) or higher.

[0071] These metal oxides are bidirectional doping materials and have the advantage of being able to provide high current or high voltage depending on the direction of the applied bias.

[0072] The above isotope battery (1) further includes a second conductivity semiconductor layer (120a) facing the first conductivity semiconductor layer (110a) with the radiation source (130) in between.

[0073] In some embodiments, the second conductive semiconductor layer (120a) may be in contact with the elliptical surface of the radiation source (130). In some embodiments, the second conductive semiconductor layer (120a) may be in partial contact with the first conductive semiconductor layer (110a). In some embodiments, the second conductive semiconductor layer (120a) may be in partial contact with the first conductive semiconductor layer (110a) and may extend onto the elliptical surface of the radiation source (130).

[0074] In some embodiments, the second conductivity type semiconductor layer (120a) may be doped with second conductivity type dopants within the semiconductor layer forming the substrate.

[0075] The substrate of the second conductivity type semiconductor layer (120a) may be the same as the substrate described in relation to the first conductivity type semiconductor layer (110a). In some embodiments, the substrate of the second conductivity type semiconductor layer (120a) may be the same as the substrate of the first conductivity type semiconductor layer (110a). In other embodiments, the substrate of the second conductivity type semiconductor layer (120a) may be different from the substrate of the first conductivity type semiconductor layer (110a).

[0076] In some embodiments, the first conductivity semiconductor layer (110a) may be doped with a first conductivity dopant. The second conductivity semiconductor layer (120a) may be doped with a second conductivity dopant. The first conductivity semiconductor layer (110a) and the second conductivity semiconductor layer (120a) may generate electron-hole pairs by radiation emitted from the radiation source (130).

[0077] In some embodiments, the first conductivity type dopant may be an n-type dopant and the second conductivity type dopant may be a p-type dopant. In other embodiments, the first conductivity type dopant may be a p-type dopant and the second conductivity type dopant may be an n-type dopant. A person skilled in the art will understand that, depending on the conductivity type of the dopant doped in each region, one of the first conductivity type semiconductor layer (110a) and the second conductivity type semiconductor layer (120a) may operate as a cathode and the other as an anode. That is, if the first conductivity type dopant is an n-type dopant and the second conductivity type dopant is a p-type dopant, the first conductivity type semiconductor layer (110a) may act as an anode and the second conductivity type semiconductor layer (120a) may act as a cathode. Conversely, if the first conductivity type dopant is a p-type dopant and the second conductivity type dopant is an n-type dopant, the first conductivity type semiconductor layer (110a) can act as a cathode and the second conductivity type semiconductor layer (120a) can act as an anode.

[0078] The region doped with the above n-type dopant may be a semiconductor region doped with, for example, nitrogen (N), phosphorus (P), arsenic (As), or antimony (Sb), which are Group 15 elements of the periodic table, or a compound semiconductor doped with nitrogen (N), phosphorus (P), arsenic (As), or antimony, which are Group 15 elements of the periodic table. In this specification, a compound semiconductor refers to a semiconductor composed of two or more elements, and may be, for example, silicon carbide, silicon oxide, aluminum phosphide (AlP), aluminum arsenide (AlAs), gallium arsenide (GaAs), or gallium nitride (GaN).

[0079] The region doped with the above p-type dopant may be a semiconductor region doped with, for example, boron (B), aluminum (Al), gallium (Ga), or indium (In), which are group 13 elements of the periodic table, or a compound semiconductor doped with boron (B), aluminum (Al), gallium (Ga), or indium (In), which are group 13 elements of the periodic table.

[0080] In some embodiments, the first conductivity semiconductor layer (110a) and / or the second conductivity semiconductor layer (120a) may include an organic material used in organic layers that receive light and generate power in fields such as solar cells. For example, the first conductivity semiconductor layer (110a) and / or the second conductivity semiconductor layer (120a) may include a thiophene-type compound. Meanwhile, the first conductivity semiconductor layer (110a) and / or the second conductivity semiconductor layer (120a) may be an organic-inorganic hybrid type by appropriately mixing the aforementioned inorganic material and organic material.

[0081] In some embodiments, a depletion region may be formed near the interface where the first conductivity semiconductor layer (110a) and the second conductivity semiconductor layer (120a) come into contact with each other.

[0082] In some embodiments, an additional second conductivity semiconductor layer (120b) may be provided below the first conductivity semiconductor layer (110a). In some embodiments, the additional second conductivity semiconductor layer (120b) may be made of substantially the same material as the second conductivity semiconductor layer (120a) disposed above the first conductivity semiconductor layer (110a).

[0083] In some embodiments, an additional first conductivity semiconductor layer (110b) may be provided on top of the second conductivity semiconductor layer (120a). In some embodiments, the additional first conductivity semiconductor layer (110b) may be made of substantially the same material as the first conductivity semiconductor layer (110a) disposed on the bottom of the second conductivity semiconductor layer (120a).

[0084] The above-described isotope battery (1) may include a first electrode (105a) and a second electrode (105b) capable of transmitting generated electrical energy to the outside. The type, size, and shape of the first electrode (105a) and the second electrode (105b) are not particularly limited as long as they possess electrical conductivity without causing physical and chemical changes in the isotope battery (1). For example, the first electrode (105a) and the second electrode (105b) may be cylindrical, tetrahedral, hexahedral, torus-shaped, or pad-shaped. In some embodiments, the first electrode (105a) and the second electrode (105b) may each independently include a metal material such as gold (Au), silver (Ag), platinum (Pt), stainless steel, copper (Cu), aluminum (Al), nickel (Ni), or titanium (Ti), or include a transparent oxide such as fluorine (F)-doped tin oxide (FTO) or indium oxide (ITO, In2O3), or include a carbon-based compound such as a carbon nanotube, graphene, or graphene oxide.

[0085]

[0086] (2nd Example)

[0087] FIGS. 4a to 4c are side views showing an isotope cell (1b) according to other embodiments of the present invention. The isotope cell (1b) illustrated in FIGS. 4a to 4c differs from the isotope cell (1a) illustrated in FIG. 3 in that a concave pit (P) is formed in the first conductivity type semiconductor layer (110a), and otherwise, it is generally the same. Therefore, the following description will focus on these differences.

[0088] Referring to FIG. 4a, the isotope cell (1b) may be provided with a concave pit (P) in the first conductive semiconductor layer (110a). The pit (P) may be positioned at a location corresponding to a radiation source (130). The cross-sectional shape of the pit (P) is not particularly limited. In some embodiments, the pit (P) may have a concave surface in which the inner surface is curved. In some embodiments, the pit (P) may include a concave surface in which the inner surface is part of a sphere or part of an ellipse.

[0089] In some embodiments, the radiation source (130) may be provided at least partially within the pit (P). In some embodiments, the radiation source (130) may be provided partially within the pit (P). In some embodiments, the radiation source (130) may completely bury the pit (P) and protrude outside the pit (P). In some embodiments, the radiation source (130) may protrude outside the pit (P) and partially extend onto the flat upper surface of the first conductive semiconductor layer (110a).

[0090] In some embodiments, the upper surface of the radiation source (130) may be curved. In some embodiments, the radiation source (130) may extend partially over the surface of the first conductive semiconductor layer (110a) adjacent to the pit (P). In some embodiments, the radius of curvature of the upper surface of the radiation source (130) may be greater than the radius of curvature of the lower surface of the radiation source (130).

[0091] In some embodiments, the radiation source (130) may have a droplet form that completely buries the pit (P). In particular, the remaining portion of the radiation source (130) after burying the pit (P) may have a droplet form.

[0092] The radiation source (130) may come into contact with the flat upper surface of the first conductive semiconductor layer (110a) at a predetermined contact angle θ. In some embodiments, the contact angle θ may be less than 90 degrees. Although the contact angle θ is depicted as being less than 90 degrees in FIG. 4a, a person skilled in the art will understand that the contact angle θ may be greater than 90 degrees. A person skilled in the art will understand that the contact angle θ may depend on the surface tension, viscosity, and wetting property of the radiation source slurry with respect to the substrate (10).

[0093] In some embodiments, the first conductive semiconductor layer (110a) may have a constant thickness. In particular, the first conductive semiconductor layer (110a) may have a constant thickness even in the portion forming the pit (P).

[0094] Referring to FIG. 4b, the entire radiation source (130) may be provided within the pit (P). That is, the entire radiation source (130) may be buried within the pit (P). In some embodiments, the radiation source (130) may completely bury the pit (P) and not protrude outside the pit (P). In some embodiments, the upper surface of the radiation source (130) may be coplanar with the flat upper surface of the first conductive semiconductor layer (110a).

[0095] In some embodiments, the lower surface of the second conductive semiconductor layer (120a) has a flat surface and can come into contact with the upper surface of the first conductive semiconductor layer (110a) and the upper surface of the radiation source (130).

[0096] Referring to FIG. 4c, the pit (P) may have a concave side. That is, the horizontal width of the pit (P) may increase and then decrease as it moves away from the lower surface of the second conductive semiconductor layer (120a). In some embodiments, the horizontal width of the radiation source (130) contained within the pit (P) may be maximum at its mid-height.

[0097] The radiation source (130) illustrated in FIG. 4c, like the radiation source (130) illustrated in FIG. 4b, may be entirely embedded within the pit (P). In some embodiments, the radiation source (130) may completely embed the pit (P) and not protrude outside the pit (P). In some embodiments, the upper surface of the radiation source (130) may be coplanar with the flat upper surface of the first conductive semiconductor layer (110a).

[0098] In some embodiments, the lower surface of the second conductive semiconductor layer (120a) has a flat surface and can come into contact with the upper surface of the first conductive semiconductor layer (110a) and the upper surface of the radiation source (130).

[0099]

[0100] (3rd Example)

[0101] FIG. 5 is a side view showing an isotope cell (1c) according to another embodiment of the present invention. The isotope cell (1c) shown in FIG. 5 differs from the isotope cell (1) shown in FIG. 1 in that an additional first conductive semiconductor layer (110b) is located above the radiation source (130) and a second conductive semiconductor layer (120a) is disposed thereon, while other aspects are generally the same. Therefore, the following description will focus on these differences.

[0102] Referring to FIG. 5, a first conductive semiconductor layer (110a) may be provided at the bottom of the radiation source (130), and an additional first conductive semiconductor layer (110b) may be provided at the top of the radiation source (130). In some embodiments, the radiation source (130) may be completely surrounded by the first conductive semiconductor layers (110a, 110b).

[0103]

[0104] (Fourth Example)

[0105] FIG. 6 is a side view showing an isotope cell (1d) according to another embodiment of the present invention. The isotope cell (1d) shown in FIG. 6 differs from the isotope cell (1) shown in FIG. 1 in that it further includes a photon generating layer (140), while otherwise being generally the same. Therefore, the following description will focus on these differences.

[0106] Referring to FIG. 6, the isotope cell (1d) further includes a photon generating layer (140) disposed adjacent to a radiation source (130).

[0107] In some embodiments, the photon generating layer (140) may include a first photon generating layer (140a) and a second photon generating layer (140b). In some embodiments, the first photon generating layer (140a) may be disposed between the first conductive semiconductor layer (110a) and the radiation source (130). In some embodiments, the second photon generating layer (140b) may be disposed on the first photon generating layer (140a). In some embodiments, the radiation source (130) may be disposed between the first photon generating layer (140a) and the second photon generating layer (140b). The second photon generating layer (140b) is provided over a portion of the first photon generating layer (140a) that does not come into contact with the radiation source (130), and may further extend over the radiation source (130) to cover the radiation source (130). The second conductive semiconductor layer (120a) may be provided on the second photon generating layer (140b). An additional first conductive semiconductor layer (110b) may be provided on the second conductive semiconductor layer (120a).

[0108] The above photon generating layer (140) may be any material layer capable of emitting photons in response to radiation particles emitted from the radiation source (130).

[0109] For example, the photon generating layer (140) may employ materials such as Ba2Ca(BO3)2, BaHfO3, BaI2:Ce, BeO, BaF2, BaMgF4, Cs2LiLuCi6:Ce, K2YF5, KCaF3, YI3:Ce, but is not limited to these. Various examples of the photon generating layer (140) are disclosed at https: / scintillator.lbl.gov / inorganic-scintillator-library / .

[0110] The photon generating layer (140) can emit photons in response to alpha rays incident from the radiation source (130). The photons generated in the photon generating layer (140) can be incident on the junction region between the first conductivity type semiconductor layer (110a, 110b) and the second conductivity type semiconductor layer (120a, 120b), and electrical energy can be generated by the photons.

[0111] The radiation source (130) may be disposed on a first photon generating layer (140a) having a substantially flat surface. The radiation source (130) may be in contact with the first photon generating layer (140a) with a predetermined contact angle θ. In some embodiments, the contact angle θ may be greater than 90 degrees. In some embodiments, the first photon generating layer (140a) is a substantially flat plane, and the radiation source (130) may have a contact angle θ greater than 90 degrees with the first conductive semiconductor layer (110a).

[0112] In some embodiments, the contact angle θ between the radiation source (130) and the first photon generating layer (140a) may be from about 100 degrees to about 160 degrees. In some embodiments, the contact angle θ between the radiation source (130) and the first photon generating layer (140a) may be from about 100 degrees to about 160 degrees, from about 105 degrees to about 155 degrees, from about 110 degrees to about 150 degrees, from about 115 degrees to about 145 degrees, from about 120 degrees to about 140 degrees, from about 125 degrees to about 135 degrees, or a range between any two of these values.

[0113] In some other embodiments, the contact angle θ may be smaller than 90 degrees.

[0114] The first photon generating layer (140a) is substantially flat, and the radiation source (130) may have a contact angle θ smaller than 90 degrees with the first photon generating layer (140a).

[0115] In some embodiments, the contact angle θ between the radiation source (130) and the first photon generating layer (140a) may be from about 20 degrees to about 80 degrees. In some embodiments, the contact angle θ between the radiation source (130) and the first photon generating layer (140a) may be from about 20 degrees to about 80 degrees, from about 25 degrees to about 75 degrees, from about 30 degrees to about 70 degrees, from about 35 degrees to about 65 degrees, from about 40 degrees to about 60 degrees, from about 45 degrees to about 55 degrees, or a range between any two of these values.

[0116] A second photon generating layer (140b) may be further provided on top of the first photon generating layer (140a). In some embodiments, the second photon generating layer (140b) may be made of substantially the same material as the first photon generating layer (140a). In some embodiments, the second photon generating layer (140b) may be disposed between the radiation source (130) and the second conductive semiconductor layer (120a).

[0117] In some embodiments, the radiation source (130) may be positioned between the first photon generating layer (140a) and the second photon generating layer (140b). In some embodiments, the radiation source (130) may face the first conductive semiconductor layer (110a) with the first photon generating layer (140a) in between. In some embodiments, the radiation source (130) may face the second conductive semiconductor layer (120a) with the second photon generating layer (140b) in between.

[0118] The second photon generating layer (140b) may at least partially cover the droplet-shaped surface of the radiation source (130). In some embodiments, the second photon generating layer (140b) may completely cover the droplet-shaped surface of the radiation source (130).

[0119] In some embodiments, an interface may exist between the first photon generation layer (140a) and the second photon generation layer (140b). That is, the first photon generation layer (140a) and the second photon generation layer (140b) may be separate layers adjacent to each other. In some embodiments, the presence of an interface between the first photon generation layer (140a) and the second photon generation layer (140b) may not be measured and / or visually confirmed. Furthermore, a gradual transition region may exist between the first photon generation layer (140a) and the second photon generation layer (140b).

[0120] In some embodiments, a second conductive semiconductor layer (120a) may be provided on the second photon generating layer (140b). In some embodiments, the second conductive semiconductor layer (120a) may have a substantially constant thickness.

[0121] An additional first conductivity semiconductor layer (110b) may be provided on the second conductivity semiconductor layer (120a).

[0122] In FIG. 6, a second conductivity semiconductor layer (120a) is provided on the second photon generation layer (140b), and an additional first conductivity semiconductor layer (110b) is provided thereon, but a person skilled in the art will understand that the stacking order may be changed. In some embodiments, an additional first conductivity semiconductor layer (110b) may be provided on the second photon generation layer (140b), and a second conductivity semiconductor layer (120a) may be provided thereon. In this case, the connection relationship of the electrodes (105a, 105b) may also be changed accordingly.

[0123]

[0124] (5th Example)

[0125] FIGS. 7a and FIGS. 7b are schematic plan views showing the shape and arrangement of the radiation source (130) in the isotope cell according to embodiments of the present invention.

[0126] Referring to FIG. 7a, the radiation source (130) may have the form of lines spaced apart at a predetermined interval rather than in the form of droplets. The radiation source (130) may have the form of two or more lines extending substantially parallel to the first conductive semiconductor layer (110a). However, the radiation source (130) may have a contact angle θ as shown in FIG. 1 and FIG. 3 and may come into contact with the first conductive semiconductor layer (110a).

[0127] The spacing between the radiation sources (130) may be greater than the width of the radiation sources (130). In some embodiments, the spacing between the radiation sources (130) may be about 3 to about 20 times the width of the radiation sources (130).

[0128] Referring to FIG. 7b, the radiation source (130) may have the form of lines extending in directions that intersect each other. In some embodiments, the radiation source (130) may have the form of a plurality of lines extending in a first direction and a plurality of lines extending in a second direction that intersects the first direction. In some embodiments, the first direction and the second direction may be perpendicular to each other. However, the invention is not limited thereto, and the first direction and the second direction may intersect at any angle so as not to be parallel to each other.

[0129] The radiation sources (130) extending in the first direction may extend substantially parallel and may take the form of lines spaced apart at predetermined intervals. Additionally, the radiation sources (130) extending in the second direction may extend substantially parallel and may take the form of lines spaced apart at predetermined intervals.

[0130] The radiation sources (130) extending in the first direction and the radiation sources (130) extending in the second direction have a contact angle θ as shown in FIG. 1 and FIG. 3 and can come into contact with the first conductive semiconductor layer (110a).

[0131]

[0132] (6th Example)

[0133] FIG. 8 is a flowchart illustrating a method for manufacturing an isotope battery (1) according to one embodiment of the present invention. FIG. 9a to 9d are schematic side views illustrating the method for manufacturing the isotope battery (1) in steps.

[0134] Referring to FIGS. 8 and FIGS. 9a, a radiation source slurry containing a radiation source is prepared (S10).

[0135] The radiation source slurry may include a radiation source and a dispersant capable of dispersing the radiation source and providing fluidity. The type and content of the dispersant may be determined by considering the viscosity, surface tension, and wettability with the substrate required for the radiation source slurry.

[0136] Since the above radiation source has been described with reference to FIG. 1, a detailed description is omitted here. The above dispersant is any solvent having appropriate viscosity and capable of dispersing the radiation source, and is not particularly limited. In some embodiments, the above dispersant is, for example, a chlorine-based solvent such as chloroform, methylene chloride, 1,2-dichloroethane, 1,1,2-trichloroethane, chlorobenzene, o-dichlorobenzene; an ether-based solvent such as tetrahydrofuran, dioxane; an aromatic hydrocarbon-based solvent such as toluene, xylene, trimethylbenzene, cresol; an aliphatic hydrocarbon-based solvent such as cyclohexane, methylcyclohexane, n-pentane, n-hexane, n-heptane, n-octane, n-nonane, n-decane; a ketone-based solvent such as acetone, methyl ethyl ketone, cyclohexanone; Examples include ester solvents such as ethyl acetate, butyl acetate, and ethyl cellosolve acetate; polyhydric alcohols and their derivatives such as ethylene glycol, ethylene glycol monobutyl ether, ethylene glycol monoethyl ether, ethylene glycol monomethyl ether, dimethoxyethane, propylene glycol, diethoxymethane, triethylene glycol monoethyl ether, glycerin, and 1,2-hexanediol; alcohol solvents such as methanol, ethanol, propanol, isopropanol, and cyclohexanol; sulfoxide solvents such as dimethyl sulfoxide; and amide solvents such as N-methyl-2-pyrrolidone and N,N-dimethylformamide; benzoate solvents such as butyl benzoate and methyl-2-methoxybenzoate; tetralin; and 3-phenoxytoluene. In some embodiments, the dispersion medium may be used as a single solvent among the solvents described above, or as a mixture of two or more solvents.

[0137] In some embodiments, the radiation source slurry may have a viscosity of about 0.5 cP to about 2000 cP at 25°C. In some embodiments, the radiation source slurry at 25°C is about 0.5 cP to about 2000 cP, about 0.7 cP to about 1800 cP, about 1 cP to about 1500 cP, about 3 cP to about 1300 cP, about 5 cP to about 1000 cP, about 8 cP to about 900 cP, about 10 cP to about 800 cP, about 13 cP to about 700 cP, about 15 cP to about 600 cP, about 18 cP to about 500 cP, about 20 cP to about 400 cP, about 30 cP to about 350 cP, about 50 cP to about 300 cP, about 80 cP to about 250 cP, about 100 cP to about 200 cP, about It may have a range of 130 cP to about 150 cP, or between any two of these values.

[0138] If the viscosity of the radiation source slurry is too low, it may be difficult to form a droplet shape. If the viscosity of the radiation source slurry is too high, processability may be reduced, making it difficult to manufacture.

[0139] In addition, a substrate (10) for distributing the above radiation source slurry is prepared.

[0140] The above-described material (10) may include a first conductivity type semiconductor layer (110a) and a second conductivity type semiconductor layer (120b). Although the first conductivity type semiconductor layer (110a) is shown in FIG. 9a as having a flat upper surface, the present invention is not limited thereto. In some embodiments, the first conductivity type semiconductor layer (110a) may have a pit (P) as shown in FIG. 4a and FIG. 4b.

[0141] The first conductivity type semiconductor layer (110a) and the second conductivity type semiconductor layer (120b) have been described with reference to FIGS. 1 to 3, so a detailed description is omitted here.

[0142]

[0143] Referring to FIGS. 8 and 9b, the previously manufactured radiation source slurry (130s) can be distributed in the form of droplets on the first conductive semiconductor layer (110a) (S20).

[0144] In some embodiments, the radiation source slurry (130s) may be provided onto the substrate (10) through a nozzle (5). The radiation source slurry (130s) may be ejected from the nozzle (5) in the form of droplets. In some embodiments, when the radiation source slurry (130s) is ejected from the nozzle (5) in the form of droplets, the droplets may form a free surface over the entire surface area of ​​the droplets at least momentarily. That is, the droplets may completely detach from the nozzle (5) before contacting the substrate (10). Afterward, the droplets may settle on the substrate (10).

[0145] The droplet released from the nozzle (5) may have a diameter of about 10 μm to about 10 mm. In some embodiments, the diameter of the droplet may be about 10 μm to about 10 mm, about 20 μm to about 8 mm, about 50 μm to about 5 mm, about 80 μm to about 4 mm, about 100 μm to about 3 mm, about 200 μm to about 2 mm, about 300 μm to about 1 mm, about 500 μm to about 800 μm, about 600 μm to about 700 μm, or a range between any two of these values.

[0146] If the diameter of the above droplet is too small or too large, it may be difficult to distribute it in the form of a droplet on the substrate (10).

[0147] In some other embodiments, the droplet of the radiation source slurry (130s) may come into contact with the substrate (10) before completely exiting the nozzle (5).

[0148] If the viscosity and / or surface tension of the radiation source slurry (130s) is relatively high, the contact angle θ may be greater than 90 degrees. Conversely, if the viscosity and / or surface tension of the radiation source slurry (130s) is relatively low, the contact angle θ may be less than 90 degrees.

[0149] Referring to FIGS. 8 and FIGS. 9c, the radiation source slurry (130s) distributed in the form of droplets can be cured (S30).

[0150] The radiation source slurry (130s) can be cured by removing the dispersion medium present in the radiation source slurry (130s). In some embodiments, the dispersion medium may be removed by heating. In some embodiments, the dispersion medium may be removed by depressurization. In some embodiments, the dispersion medium may be removed by heating and depressurization. However, the method of curing the radiation source slurry (130s) is not limited to removing the dispersion medium, and a person skilled in the art will understand that the radiation source slurry (130s) can be cured in various ways depending on the characteristics of the dispersion medium. For example, the radiation source slurry (130s) can be cured by crosslinking the dispersion medium.

[0151] Referring to FIGS. 8 and FIGS. 9d, a second conductive semiconductor layer (120a) can be formed on a hardened radiation source (130) (S40).

[0152] In some embodiments, the second conductivity semiconductor layer (120a) may be made of substantially the same material as the second conductivity semiconductor layer (120b) disposed below the first conductivity semiconductor layer (110a).

[0153] Subsequently, an additional first conductivity semiconductor layer (110b) may be formed on the second conductivity semiconductor layer (120a). In some embodiments, the first conductivity semiconductor layer (110b) may be made of substantially the same material as the first conductivity semiconductor layer (110a).

[0154] The first conductivity type semiconductor layer (110b) and the second conductivity type semiconductor layer (120a) can each be formed independently by various methods such as chemical vapor deposition (CVD), physical vapor deposition (PVD), atomic layer deposition (ALD), and epitaxial growth, and are not particularly limited.

[0155] Afterward, by forming the first electrode (105a) and the second electrode (105b), an isotope cell (1) as shown in FIG. 1 can be manufactured.

[0156]

[0157] (7th Example)

[0158] FIG. 10 is a flowchart showing a method for manufacturing an isotope battery (1b) according to an embodiment described with reference to FIG. 4a. FIG. 11a to 11e are schematic side views showing the method for manufacturing the isotope battery (1b) in steps.

[0159] Referring to FIG. 10 and FIG. 11a, a radiation source slurry containing a radiation source is prepared and a pit (P) is formed on a second conductive semiconductor layer (120b) (P10).

[0160] The preparation of the radiation source slurry has been described above with reference to Fig. 8, so a detailed description is omitted here.

[0161] The pit (P) can be formed by forming an etching mask on the second conductivity semiconductor layer (120b) and selectively etching the second conductivity semiconductor layer (120b) using the etching mask. Specifically, the pit (P) can be formed by selectively removing the portion of the second conductivity semiconductor layer (120b) exposed through the etching mask.

[0162] The selective removal of the second conductivity semiconductor layer (120b) can be performed by methods known to a person skilled in the art, such as wet etching, dry etching, and sputtering.

[0163] The above etching mask can be removed thereafter.

[0164] Referring to FIG. 10 and FIG. 11b, a first conductivity type semiconductor layer (110a) can be formed (P20). In some embodiments, the first conductivity type semiconductor layer (110a) can be formed by implanting ions of the opposite conductivity type onto the upper surface of the second conductivity type semiconductor layer (120b). If ions of the opposite conductivity type are implanted at a sufficient concentration onto the upper surface of the second conductivity type semiconductor layer (120b), a first conductivity type semiconductor layer (110a) having a first conductivity type can be formed on the upper surface of the second conductivity type semiconductor layer (120b).

[0165] In some other embodiments, the first conductivity semiconductor layer (110a) may be formed by deposition on the upper surface of the second conductivity semiconductor layer (120b). For example, the first conductivity semiconductor layer (110a) may be formed on the upper surface of the second conductivity semiconductor layer (120b) by methods such as chemical vapor deposition, physical vapor deposition, or epitaxial growth. In this case, pits may be formed in the second conductivity semiconductor layer (120b), and the first conductivity semiconductor layer (110a) may be formed thereon with a substantially constant thickness. As a result, pits (P) may be formed in the first conductivity semiconductor layer (110a) at positions corresponding to the pits of the second conductivity semiconductor layer (120b).

[0166] Referring to FIG. 10 and FIG. 11c, the previously manufactured radiation source slurry (130s) can be distributed in the form of droplets on the first conductive semiconductor layer (110a) (P30).

[0167] In some embodiments, the radiation source slurry (130s) may be provided onto a pit (P) of the first conductive semiconductor layer (110a) through a nozzle (5). The radiation source slurry (130s) may be ejected in the form of droplets from the nozzle (5). The nozzle (5) may be configured to remember or detect the location of the pit (P) and to spray droplets of the radiation source slurry (130s) at that location.

[0168] In some embodiments, when the radiation source slurry (130s) is ejected from the nozzle (5) in the form of a droplet, the droplet may form a free surface over the entire surface area of ​​the droplet at least momentarily. That is, the droplet may completely detach from the nozzle (5) before contacting the pit (P). Afterward, the droplet may settle on the pit (P).

[0169] A droplet placed on the pit (P) may fill the interior of the pit (P). The droplet may enter the interior of the pit (P) by pressure sprayed from the nozzle (5) and / or by capillary action manifested by the pit (P). In some embodiments, a portion of the droplet may completely fill the pit (P) and the remainder of the droplet may have a free surface protruding above the pit (P) (i.e., above the upper surface of the first conductive semiconductor layer (110a).

[0170] Referring to FIGS. 10 and FIGS. 11d, the radiation source slurry (130s) distributed in the form of droplets can be cured (P40). Since this has been explained with reference to FIGS. 8 and FIGS. 9c, a detailed explanation is omitted here.

[0171] Referring to FIG. 10 and FIG. 11e, a second conductive semiconductor layer (120a) can be formed on a hardened radiation source (130) (P50).

[0172] In some embodiments, the second conductivity semiconductor layer (120a) may be made of substantially the same material as the second conductivity semiconductor layer (120b) disposed below the first conductivity semiconductor layer (110a).

[0173] Subsequently, an additional first conductivity semiconductor layer (110b) may be formed on the second conductivity semiconductor layer (120a). In some embodiments, the first conductivity semiconductor layer (110b) may be made of substantially the same material as the first conductivity semiconductor layer (110a).

[0174] The first conductivity type semiconductor layer (110b) and the second conductivity type semiconductor layer (120a) can each be formed independently by various methods such as chemical vapor deposition (CVD), physical vapor deposition (PVD), atomic layer deposition (ALD), and epitaxial growth, and are not particularly limited.

[0175] Afterward, by forming the first electrode (105a) and the second electrode (105b), an isotope cell (1b) as shown in FIG. 4a can be manufactured.

[0176]

[0177] As described above, although embodiments of the present invention have been described in detail, a person skilled in the art to which the present invention pertains will be able to modify and implement the present invention in various ways without departing from the spirit and scope of the present invention as defined in the appended claims. Therefore, future modifications to the embodiments of the present invention will not depart from the technology of the present invention.

[0178] [Explanation of the symbol]

[0179] 1, 1a, 1b, 1c, 1d: Isotope cells

[0180] 5: Nozzle

[0181] 10: Entry

[0182] 105a: First electrode

[0183] 105b: Second electrode

[0184] 110a, 110b: First conductivity type semiconductor layer

[0185] 120a, 120b: Second conductivity type semiconductor layer

[0186] 130: Radiation source

[0187] 130s: Radiation source slurry

[0188] 140: Photon generation layer

[0189] 140a: First photon generation layer

[0190] 140b: Second photon generation layer

Claims

1. First conductivity type semiconductor layer; A radiation source provided on the first conductivity type semiconductor layer and having at least partially droplet form; and A second conductivity type semiconductor layer facing the first conductivity type semiconductor layer with the above radiation source in between; Isotope cell containing 2. In Paragraph 1, An isotope battery characterized in that the first conductive semiconductor layer is a flat plane, and the radiation source has a contact angle greater than 90 degrees with the first conductive semiconductor layer.

3. In Paragraph 1, An isotope battery characterized in that the first conductive semiconductor layer is a flat plane, and the radiation source has a contact angle smaller than 90 degrees with the first conductive semiconductor layer.

4. In Paragraph 1, The above-mentioned first conductivity type semiconductor layer has a concave pit, and The above radiation source buries the pit and is characterized by having a shape protruding above the pit.

5. In Paragraph 4, The above-mentioned radiation source is characterized by having at least a partially elliptical surface.

6. In Paragraph 4, An isotope cell characterized in that the radiation source has a contact angle greater than 90 degrees with the flat surface of the first conductive semiconductor layer.

7. In Paragraph 1, An isotope battery characterized by further including an additional second conductivity type semiconductor layer below the first conductivity type semiconductor layer.

8. In Paragraph 7, An isotope battery characterized in that the first conductivity type semiconductor layer has a substantially constant thickness.

9. In Paragraph 7, An isotope battery characterized by further including an additional first conductivity semiconductor layer on top of the second conductivity semiconductor layer facing the first conductivity semiconductor layer with the radiation source in between.

10. In Paragraph 1, An isotope battery characterized by further including a photon generating layer between the radiation source and the first conductive semiconductor layer.

11. In Paragraph 10, The above radiation source has an upper surface that includes an elliptical plane, and An isotope cell characterized in that the above photon generating layer extends to the upper surface of the radiation source and covers the above elliptical surface.

12. A step of preparing a radiation source slurry containing a radiation source; A step of distributing the radiation source slurry in the form of droplets on a semiconductor substrate including a first conductivity type semiconductor layer; A step of curing the radiation source slurry distributed in the form of droplets; and A step of forming a second conductive semiconductor layer on the hardened radiation source; A method for manufacturing an isotope battery comprising 13. In Paragraph 12, A method for manufacturing an isotope battery, characterized in that, in the step of distributing the radiation source slurry in the form of droplets, the radiation source slurry is discharged onto the semiconductor substrate in the form of droplets with a diameter of about 10 μm to about 10 mm.

14. In Paragraph 12, A method for manufacturing an isotope battery, characterized in that, in the step of distributing the radiation source slurry in the form of droplets, the radiation source slurry is ejected from a nozzle in the form of droplets, the ejected droplets form a free surface over the entire surface area, and subsequently the droplets are settled on the semiconductor substrate.

15. In Paragraph 12, A method for manufacturing an isotope cell characterized in that the viscosity of the radiation source slurry is about 0.5 cP to about 2000 cP at 25℃.

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