Semiconductor plasma treatment apparatus and efem using same

Abstract

The present invention provides a semiconductor plasma treatment apparatus comprising: a plasma chamber having an opening formed to enable entry and exit of a wafer; a wafer heater installed inside the plasma chamber and capable of increasing the temperature of the wafer; a plasma reactor installed inside the plasma chamber and treating the wafer with atmospheric-pressure plasma; a cooling head installed inside the plasma chamber and capable of lowering the temperature of the wafer by discharging gas; and a control unit, wherein the control unit executes instructions for: controlling the operation of the wafer heater by measuring the surface temperature of the wafer; controlling the operation of the plasma reactor when the surface temperature of the wafer reaches a target temperature; and controlling the operation of the cooling head after the treatment with atmospheric-pressure plasma is completed. The present invention can precisely control the plasma treatment process of a wafer by heating the wafer to the activation temperature, treating the wafer with plasma, and then lowering the temperature of the wafer.

Description

Semiconductor plasma processing apparatus and EFE using the same

[0001] The present invention relates to a semiconductor plasma processing apparatus and an EFEM using the same, and more specifically, to a semiconductor plasma processing apparatus used in a semiconductor process and an EFEM (equipment front end module) including the same.

[0002] The contents presented in this section are intended merely to provide background information for the present invention and do not constitute prior art.

[0003] In the semiconductor manufacturing process, wafers are processed within cleanrooms to improve semiconductor yield and quality. However, as the high integration of semiconductor devices, the miniaturization of circuits, and the increase in wafer size progress, maintaining the entire cleanroom in a clean state has become technically and costly difficult.

[0004] Therefore, recently, cleanliness management has been performed only on the space surrounding the wafer. To achieve this, the wafer is stored inside a sealed storage container called a Front-Opening Unified Pod (FOUP), and a module called an Equipment Front End Module (EFEM) is used to transfer the wafer between the process equipment that processes the wafer and the FOUP.

[0005] As a technology related to the present invention, an EFEM system disclosed in the Korean Registered Patent Publication discloses a control unit that causes the downward airflow of the wafer transport chamber to flow inward toward the inside of the transport vessel or in the opposite direction toward the transport vessel, depending on the internal environment of the transport vessel. This related technology is similar to the present invention in that it is an EFEM system, but the two inventions differ in structure and effect in that it relates to controlling the downward airflow of the transport chamber, whereas the present invention utilizes atmospheric pressure plasma.

[0006] The problem that the present invention aims to solve is to provide a semiconductor plasma processing apparatus capable of processing plasma while the wafer temperature is raised to an activation temperature and then lowering the wafer temperature again, and an EFEM utilizing the same.

[0007] The problem that the present invention aims to solve is to provide a semiconductor plasma processing apparatus capable of treating a wafer with atmospheric pressure plasma before or after a wafer processing process, and an EFEM utilizing the same.

[0008] The problem that the present invention aims to solve is to provide a semiconductor plasma treatment apparatus capable of reducing the surface of an oxidized wafer and removing process residues contaminated on the wafer, and an EFEM utilizing the same.

[0009] The problem that the present invention aims to solve is not limited to the problems mentioned above, and other unmentioned problems will be clearly understood by those skilled in the art from the description below.

[0010] In order to achieve the above objectives, according to one embodiment of the technical concept of the present invention, a semiconductor plasma processing apparatus is disclosed, comprising: a plasma chamber having an entrance / exit port formed to allow entry and exit of a wafer; a wafer heater installed inside the plasma chamber and capable of raising the temperature of the wafer; a plasma reactor installed inside the plasma chamber and capable of treating atmospheric pressure plasma on the wafer; a cooling head installed inside the plasma chamber and capable of discharging gas to lower the temperature of the wafer; and a control unit, wherein the control unit is configured to include a command for controlling the operation of the wafer heater by measuring the surface temperature of the wafer, a command for controlling the operation of the plasma reactor when the surface temperature of the wafer reaches a target temperature, and a command for controlling the operation of the cooling head after the atmospheric pressure plasma treatment is completed.

[0011] In addition, the semiconductor plasma processing device can be configured such that a wafer can enter and exit the plasma chamber by means of an atmospheric pressure robot of an Equipment Front End Module (EFEM), and the plasma reactor can be configured to recognize the wafer as a ground electrode to generate direct plasma.

[0012] In addition, the semiconductor plasma processing device may be configured to further include a chuck moving device in which a wafer is placed on a wafer heater and the wafer heater can be displaced in a horizontal state relative to the plasma reactor.

[0013] In addition, the semiconductor plasma processing device may be configured to further include a viewport that allows the plasma chamber to visually check the state of the wafer.

[0014] In addition, the semiconductor plasma processing device may be configured to further include an open slit in the form of an opening for the entrance and exit of the plasma chamber; and a slit valve for controlling the opening and closing of the open slit.

[0015] In addition, the semiconductor plasma processing device may be configured to further include a purge gas nozzle for introducing atmospheric gas into the interior of the plasma chamber; an exhaust line connected to the plasma chamber; and a pressure control valve installed in the exhaust line.

[0016] In addition, the semiconductor plasma processing device further includes a mass flow controller that controls the inflow of atmospheric gas through a purge gas nozzle, and the control unit may be configured to control the mass flow controller and the pressure control valve during plasma processing on a wafer so that the pressure inside the plasma chamber is maintained at a negative pressure.

[0017] In addition, the semiconductor plasma processing device may be configured to further include a bottom plate installed between the purge gas nozzle and the exhaust line, which distributes the amount of exhaust gas uniformly through perforations formed on its surface.

[0018] In addition, the semiconductor plasma processing device may be configured to further include a lift pin assembly that receives a wafer from an atmospheric pressure robot through vertical driving and places it on a wafer heater.

[0019] In addition, the semiconductor plasma processing apparatus may be configured to include a cooling head, a disc-shaped head coupled to an opening formed in the ceiling of a plasma chamber; an input nozzle installed on the top surface of the head and connected to a gas chamber; and injection nozzles arranged in a plurality of rows and columns on the bottom surface of the head.

[0020] To achieve the above objectives, according to one embodiment of the technical concept of the present invention, an EFEM is disclosed, comprising: a transfer chamber configured internally for connecting to a load port, a load lock, and a process module through an opening provided on the side and for transferring a wafer from the load port to the load lock or process module; a load port equipped with a transfer container (112) for storing a plurality of wafers, wherein the transfer chamber is configured to include: a semiconductor plasma processing device that processes plasma on the wafer before, after, or before and after the wafer is processed by the process module; an atmospheric pressure robot that transfers and returns the wafer between the transfer container and the semiconductor plasma processing device and between the semiconductor plasma processing device and the load lock; and an aligner that aligns the position of the transferred wafer.

[0021] Additionally, the EFEM comprises a semiconductor plasma processing device including: a plasma chamber having an entrance / exit port formed to allow the entry and exit of a wafer; a wafer heater installed inside the plasma chamber and capable of raising the temperature of the wafer; a plasma reactor installed inside the plasma chamber and capable of treating atmospheric pressure plasma on the wafer; a cooling head installed inside the plasma chamber and capable of discharging gas to lower the temperature of the wafer; and a control unit. The control unit may be configured to include a command to control the operation of the wafer heater by measuring the surface temperature of the wafer, a command to control the operation of the plasma reactor when the surface temperature of the wafer reaches a target temperature, and a command to control the operation of the cooling head after the atmospheric pressure plasma treatment is completed.

[0022] Specific details of other embodiments are included in "Specific details for implementing the invention" and the attached "drawings".

[0023] The advantages and / or features of the present invention and the methods for achieving them will become clear by referring to the various embodiments described below in detail together with the accompanying drawings.

[0024] However, it should be understood that the present invention is not limited to the configurations of each embodiment disclosed below, but may be implemented in various different forms, and that each embodiment disclosed in this specification is provided merely to make the disclosure of the present invention complete and to fully inform those skilled in the art of the scope of the present invention, and that the present invention is defined only by the scope of each claim of the claims.

[0025] According to the present invention, the plasma treatment process of a wafer can be precisely controlled by raising the temperature of the wafer to an activation temperature before plasma treatment and lowering the temperature of the wafer after plasma treatment.

[0026] In addition, reduction treatment of the wafer and removal of process residues from the wafer are possible inside the EFEM or in the space passing through the EFEM.

[0027] In addition, atmospheric pressure plasma treatment can be applied to the wafer before, after, or both before and after the wafer processing process.

[0028] The effects obtainable by the wafer processing apparatus according to the technical concept of the present invention are not limited to the effects mentioned above, and other unmentioned effects will be clearly understood by those skilled in the art to which the present invention belongs from the description below.

[0029] FIG. 1 is an exemplary diagram of an EFEM according to a first embodiment of the present invention.

[0030] FIG. 2 is a plan view of an EFEM according to the first embodiment depicted in FIG. 1.

[0031] FIG. 3 is a plan view of an EFEM according to a second embodiment.

[0032] FIG. 4 is a block diagram of a semiconductor plasma generator equipped in the EFEM of FIG. 2 or FIG. 3.

[0033] FIG. 5 is a block diagram of a plasma reactor according to one embodiment of the present invention.

[0034] FIG. 6 is an exemplary diagram of a plasma chamber according to one embodiment of the present invention.

[0035] Figure 7 is an example of the housing of the plasma chamber depicted in Figure 6.

[0036] Figure 8 is an exploded view of the plasma chamber depicted in Figure 6.

[0037] Figure 9 is a cross-sectional view of the plasma chamber depicted in Figure 6.

[0038] FIG. 10 is a flowchart of plasma treatment prior to the process using a semiconductor plasma generator equipped in the EFEM of FIG. 2 or FIG. 3.

[0039] FIG. 11 is a flowchart of plasma treatment after a process using a semiconductor plasma generator equipped in the EFEM of FIG. 2 or FIG. 3.

[0040] Before describing the present invention in detail, it should be understood that the terms and words used in this specification should not be interpreted as being limited to their ordinary or dictionary meanings, and that the inventor of the present invention may appropriately define and use the concepts of various terms to best describe their invention, and furthermore, that these terms and words should be interpreted in a meaning and concept consistent with the technical spirit of the present invention.

[0041] In other words, it should be understood that the terms used in this specification are used merely to describe preferred embodiments of the present invention and are not intended to specifically limit the content of the present invention, and that these terms are defined in consideration of the various possibilities of the present invention.

[0042] In addition, it should be noted that in this specification, singular expressions may include plural expressions unless the context clearly indicates a different meaning, and that even if they are expressed in a similarly plural form, they may include a singular meaning.

[0043] Throughout this specification, where it is stated that a component "includes" another component, unless specifically stated otherwise, this may mean that it does not exclude any other component but may include any other component.

[0044] Furthermore, it should be noted that in cases where it is stated that a component "exists inside or is installed in connection with" another component, this component may be installed in direct connection or contact with the other component, or it may be installed at a certain distance apart, and in the case where it is installed at a certain distance apart, there may be a third component or means for fixing or connecting the component to the other component, and a description of this third component or means may be omitted.

[0045] On the other hand, if it is stated that one component is "directly connected" or "directly connected" to another component, it should be understood that there is no third component or means.

[0046] Likewise, other expressions describing the relationship between each component, such as “between” and “right between”, or “adjacent to” and “directly adjacent to”, should be interpreted as having the same intent.

[0047] In addition, it should be understood that in this specification, terms such as “one side,” “other side,” “one side,” “other side,” “first,” “second,” etc., are used to clearly distinguish one component from another component, and that the meaning of the component is not restricted by such terms.

[0048] In addition, position-related terms such as "up," "down," "left," and "right" used in this specification should be understood as indicating the relative position of the corresponding component in the drawing, and unless an absolute position is specified, these position-related terms should not be understood as referring to an absolute position.

[0049] Furthermore, in specifying the reference numerals for each component of each drawing in this specification, the same component has the same reference numeral even if it is shown in different drawings; that is, the same reference numeral throughout the specification indicates the same component.

[0050] In the drawings attached to this specification, the size, location, connection relationships, etc., of each component constituting the present invention may be described in a partially exaggerated, reduced, or omitted manner for the convenience of explanation or to sufficiently clearly convey the concept of the present invention, and therefore, the proportions or scale may not be strictly accurate.

[0051] In addition, in describing the present invention below, detailed descriptions of components, such as prior art and known technologies, that are deemed to unnecessarily obscure the essence of the invention may be omitted.

[0052] Hereinafter, embodiments of the present invention will be described in detail with reference to the relevant drawings.

[0053] In the xyz coordinate axes shown in each drawing, the x-axis direction is set as the length direction of EFEM (100), the y-axis direction as the width direction, and the z-axis direction as the height direction.

[0054] An EFEM according to the prior art is an interface module of process equipment that supplies a wafer in a transfer container (FOUP) to a process module in a semiconductor manufacturing line, and an atmospheric pressure robot provided inside the EFEM supplies the wafer in the transfer container to the process module.

[0055] An EFEM (100) according to one embodiment of the present invention is characterized by having a function of transferring a wafer and a function of treating plasma on the wafer.

[0056] FIG. 1 is an exemplary diagram of an EFEM according to a first embodiment of the present invention.

[0057] FIG. 2 is a plan view of an EFEM according to the first embodiment depicted in FIG. 1.

[0058] FIG. 3 is a plan view of an EFEM according to a second embodiment.

[0059] Referring to FIGS. 1 to 3, the EFEM (100) is a device for transporting a wafer (W) under atmospheric pressure or positive pressure conditions. The EFEM (100) may be configured to include a transport chamber (110) and a plurality of load ports (111). The transport chamber (110) of the EFEM (100) according to an embodiment of the present invention is characterized by including a semiconductor plasma processing device (150).

[0060] A plurality of load ports (111) may be provided on the front side of the return room (110). The load port (111) includes a transfer container (front opening unified pod, FOUP) (112) that stores a plurality of wafers (W) in layers.

[0061] A transfer container (front opening unified pod, FOUP (112)) can be loaded into the front opening of the load port (111). A wafer loaded into the interior of the transfer container (112) can be transferred to the return room (110) from the rear opening of the load port (111).

[0062] The return chamber (110) is connected to the rear side of the load port (111). A wafer loaded in the transfer container (112) can be transferred to the return chamber (110), or a wafer that has been transferred can be loaded back into the transfer container (112).

[0063] The semiconductor plasma processing device (150) may be provided inside the transport chamber (110) or may be combined with the transport chamber (110) through docking.

[0064] Referring to FIGS. 2 and 3, the return chamber (110) may be configured to include an aligner (120), an atmospheric pressure robot (130), and a semiconductor plasma processing device (150).

[0065] The aligner (120) has the function of aligning the position of a wafer removed from the transfer container (112) of the load port (111). When the atmospheric pressure robot (130) removes the wafer (W) from the transfer container (112) and loads it onto the aligner (120), the aligner (120) transmits information regarding the difference between the current position and the target position of the wafer (W) to the atmospheric pressure robot (130), and the atmospheric pressure robot (130) loads the wafer (W) using the transmitted information.

[0066] The atmospheric pressure robot (130) has the function of taking out and transporting a wafer stored in the transport container (FOUP) (112) of the load port (111). As described above, the atmospheric pressure robot (130) has the function of taking out or loading a wafer (W) from the transport container (112) in synchronization with the aligner (120).

[0067] The semiconductor plasma processing device (150) has the function of processing atmospheric pressure plasma on a wafer (W) transported by an atmospheric pressure robot (130) while located inside the EFEM (100) as shown in FIG. 2 or docked with the EFEM (100) as shown in FIG. 3.

[0068] Referring to FIG. 2, an embodiment is depicted in which a semiconductor plasma processing device (150) is placed inside an EFEM (100).

[0069] Referring to FIG. 3, a semiconductor plasma processing device (150) is depicted docked with the EFEM (100) outside the EFEM (100). The semiconductor plasma processing device (150) is placed inside a docking device (140), and the docking device (140) can engage and disengage docking with the EFEM (100), and a wafer (W) can be moved through a door installed between the semiconductor plasma processing device (150) and the EFEM (100). That is, the atmospheric pressure robot (130) can take the wafer (W) out of the transfer container (112) and move it into the plasma chamber (151) of the semiconductor plasma processing device (150), and after the plasma processing is completed, the wafer (W) can be moved back from the plasma chamber (151) to the transfer container (112).

[0070] The semiconductor plasma processing device (150) can process atmospheric pressure plasma before and after, or both before and after, the processing process by the process module (400) connected to the EFEM (100). The semiconductor plasma processing device (150) can activate the surface of the wafer by processing atmospheric pressure plasma on the wafer before the wafer processing process, and has the function of removing reaction residues from the wafer by processing atmospheric pressure plasma on the wafer after the wafer processing process.

[0071] FIG. 4 is a block diagram of a semiconductor plasma generator depicted in FIG. 2 or FIG. 3.

[0072] Referring to FIG. 4, the plasma chamber (151) of the semiconductor plasma processing device (150) basically includes an entrance (163) to allow a wafer (W) to enter and exit, and may further include a slit valve (164) to control the opening and closing of the slit-shaped entrance (163). An open plasma chamber (151) includes only the entrance (163), while a closed plasma chamber (151) additionally includes a slit valve (164) in the entrance (163).

[0073] The closed plasma chamber (151) will be described below.

[0074] Referring again to FIG. 4, the semiconductor plasma processing device (150) may be configured to include a plasma chamber (151), a plasma reactor (152), a mass flow controller (MFC) (153), a matcher (154), a power generator (155), an exhaust line (156), a pressure control valve (157), a bottom plate (161), a chuck moving device (168), a wafer heater (180), a cooling head (190), a purge gas nozzle (201), and a control unit (210).

[0075] The plasma chamber (151) corresponds to the basic framework of the semiconductor plasma processing device (150). The plasma chamber (151) provides a space for plasma processing on a wafer (W), for example, a cuboid-shaped internal space. A plasma reactor (152), an exhaust line (156), a bottom plate (161), a chuck moving device (168), a wafer heater (180), a cooling head (190), and a purge gas nozzle (201) may be placed in the internal space of the plasma chamber (151). For example, the plasma reactor (152) is positioned on the ceiling of the plasma chamber (151), the exhaust line (156) is positioned on the bottom of the plasma chamber (151), the bottom plate (161) is positioned between the plasma reactor (152) and the exhaust line (156) in close proximity to the exhaust line, and the purge gas nozzles (201) can be evenly distributed on the upper part of the plasma chamber (151), specifically in multiple numbers close to the ceiling.

[0076] A wafer (W) can be moved in and out through an entrance (163) formed on one side of a plasma chamber (151). An end effector (133) is provided at one end of the robot arm (131) of the atmospheric pressure robot (130), and the wafer (W) can move in and out through the entrance (163) while placed on the end effector (133). That is, the atmospheric pressure robot (130) can use the robot arm (131) and the end effector (133) to grasp the wafer (W) loaded in the transfer container (FOUP) of the load port (111), move the coordinates, and supply the wafer (W) into the interior of the plasma chamber (151).

[0077] The slit valve (164) can control the opening and closing of the inlet / outlet (163). The operation of the slit valve (164) can be controlled in conjunction with the operation of the end effector (133). For example, when the end effector (133) carrying the wafer (W) approaches the inlet / outlet (163), the slit valve (164) can control the inlet / outlet (163) to open it. When plasma processing is performed after the wafer (W) is transferred into the plasma chamber (151), the slit valve (164) can control the inlet / outlet (163) to close it.

[0078] The plasma reactor (152) can be placed on the ceiling of the plasma chamber (151). Specifically, among the upper and lower parts of the plasma reactor (152), the upper part is placed outside the plasma chamber (151) and connected to the matcher (154) and the mass flow controller (153), and the lower part containing the anode (152a) is placed inside the plasma chamber (151).

[0079] The lower end of the plasma reactor (152) is inserted into an opening formed in the plasma chamber (151), and the outside and inside of the plasma chamber (151) can be sealed by a sealing part (151a). The sealing part (151a) is in the form of a gasket, and the material may be rubber or silicone. The sealing part (151a) prevents the atmospheric gas and plasma frame inside the plasma chamber (151) from leaking to the outside of the plasma chamber (151).

[0080] The plasma reactor (152) can react atmospheric pressure plasma with a wafer (W) that has entered the interior of the plasma chamber (151). That is, the plasma reactor (152) uses a matcher (154) and a power generator (155) to form a discharge between the anode (152a) and the cathode, i.e., the wafer (W) corresponding to the ground electrode, and supplies and reacts process gas supplied through a mass flow controller (153) in the discharged space to create a plasma frame, and causes the plasma frame to flow in the direction of gravity to treat the surface of the wafer (W).

[0081] The plasma reactor (152) may be integrally formed with the matcher (154). That is, the matcher (154) may be placed on top of the plasma reactor (152). The plasma reactor (152) and the matcher (154) may be mechanically and electrically connected. The plasma reactor (152) may use a frequency of 2 MHz to 60 MHz.

[0082] As the wafer (W) enters and exits, the wafer (W) acts as a ground, causing the plasma reactor (152) to automatically turn on and generate a main plasma frame of atmospheric pressure plasma. That is, the plasma reactor (152) can generate a direct plasma frame by recognizing the wafer (W) entering the interior of the plasma chamber (151) through the entrance (163) as a ground electrode. Here, the doped wafer (W) serves as both the negative electrode and the target for plasma processing.

[0083] A mass flow controller (153) is positioned between a gas chamber (not shown) and a plasma chamber (151) and has the function of controlling the amount of gas supplied from the gas chamber to the plasma chamber (151). The gas chamber accelerates electrons to maintain a mixed state of neutral atoms, molecules, cations, and electrons through collisions. The gas chamber may be positioned outside the EFEM (100). The gas chamber may store an inert gas, such as argon (Ar), helium (He), or neon (Ne), as a process gas and supply gas to the plasma chamber (151) under the control of the mass flow controller (MFC) (153). As the process gas, argon 98% or more with the remainder of 2% or less hydrogen, oxygen, or nitrogen, or helium 95% or more with the remainder of 5% or less hydrogen, oxygen, or nitrogen may be used.

[0084] The matcher (154) has the function of adjusting the ignition impedance in response to changes in the impedance of the plasma chamber (151) between the plasma chamber (151) and the power generator (155).

[0085] The matcher (154) is positioned so as to be exposed to the outside of the plasma chamber (151), and the plasma reactor (152) is positioned inside the plasma chamber (151). Accordingly, the cooling fan (162) (see FIG. 6) included in the matcher (154) is also positioned outside the plasma chamber (151). The plasma reactor (152) integrated with the matcher is characterized by having a part exposed to the outside of the plasma chamber (151), making disassembly, assembly, and maintenance easy.

[0086] Since the matcher (154) is cooled by a cooling fan outside the plasma chamber (151), there is an advantage that water cooling is not required. In addition, there is an advantage that particles do not structurally enter the interior of the plasma chamber (151). There is also no concern about particles being generated by the cooling fan (162), etc.

[0087] The power generator (155) has the function of supplying power to the plasma reactor (152). The power generator (155) can be electrically connected to the plasma reactor (152) through a matcher (154). The frequency band of the power generator (155) can be 2 MHz to 60 MHz.

[0088] The exhaust line (156) has the function of discharging gas inside the plasma chamber (151), for example, a processed plasma frame and atmosphere gas. The exhaust line (156) can be connected to the bottom of the plasma chamber (151).

[0089] The pressure control valve (157) has the function of controlling the pressure inside the plasma chamber (151) by controlling the amount of gas discharged through the exhaust line (156). The pressure control valve (157) can be installed in the exhaust line (156).

[0090] A bottom plate (161) can be installed between the plasma reactor (152) and the exhaust line (156) in close proximity to the exhaust line, that is, close to the bottom of the plasma chamber (151). The bottom plate (161) is plate-shaped and has a plurality of through holes (161a) formed in the plate, so that the amount of atmosphere exhausted through the exhaust line (156) via the through holes (161a) is evenly distributed in the plasma chamber (151). In other words, the bottom plate (161) prevents the phenomenon where the pressure drops only in the vicinity close to the exhaust line (156) when the exhaust line (156) is operated.

[0091] As the end effector (133) of the atmospheric pressure robot (130) provided inside the EFEM moves the wafer (W), the entire surface of the wafer (W) in the semiconductor plasma processing device (150) having an open plasma chamber (151) can be covered by a plasma frame generated at the bottom of the anode (152a).

[0092] In order for a semiconductor plasma processing device (150) having an open plasma chamber (151) to process plasma on a wafer (W) while moving the wafer (W) with the help of an atmospheric pressure robot (130), it is preferable that a plasma reactor (152) be positioned closer to the entrance (163) with respect to the center of the plasma chamber (151).

[0093] On the other hand, a semiconductor plasma processing device (150) having a closed plasma chamber (151) may be configured to further include a chuck moving device (168) and a wafer heater (180). A plasma frame is generated between the plasma reactor (152) and the wafer (W), and the plasma frame processes the surface of the wafer. The plasma reactor (152) is fixed, and the wafer heater (180) moves while holding the wafer (W), thereby plasma processing the surface of the wafer.

[0094] The chuck moving device (168) has the function of moving the wafer heater (180) in the X-axis direction using a rail and a motor drive device. In a frontal view, the T-shaped wafer heater (180) is connected to the motor drive device, and the chuck moving device (168) can reciprocate in the X-axis direction inside the plasma chamber (151) along the rail.

[0095] A wafer heater (180) is provided inside a plasma chamber (151) and has the function of holding a wafer (W). That is, a wafer (W) moved by a robot arm (131) and an end effector (133) can be plasma treated while being transferred to the wafer heater (180). The wafer heater (180) holding the wafer (W) can be moved in the left and right directions, that is, in the X-axis direction. By moving the wafer heater (180), the plasma generated in the plasma reactor (152) inside the plasma chamber (151) can be evenly treated on the entire surface of the wafer (W).

[0096] The purge gas nozzle (201) corresponds to a nozzle that discharges nitrogen (N2) to change the atmosphere of the plasma chamber (151) from air to nitrogen (N2). It is necessary to change the air to nitrogen because there is a risk of oxidation when the wafer (W), heated by the wafer heater (180), comes into contact with air. The purge gas nozzle (201) is installed inside the plasma chamber (151) and can be connected to an external nitrogen tank via a mass flow controller (153).

[0097] Overall, the control unit (210) can control the detailed operation of the semiconductor plasma processing device (150). Before processing the wafer (W) with atmospheric pressure plasma, the control unit (210) can form a nitrogen atmosphere pressure inside the plasma chamber (151) in the form of negative pressure, which is lower than atmospheric pressure, by controlling the operation of the mass flow controller (153) and the pressure control valve (157).

[0098] Before plasma treatment, the wafer (W) must be heated to increase the plasma reaction rate. The control unit (210) measures the surface temperature of the wafer (W) and controls the operation of the wafer heater (180) to raise the surface temperature of the wafer (W) to a target temperature. Then, the control unit (210) operates the plasma reactor (152) according to the movement of the wafer (W) to enable atmospheric pressure plasma treatment of the surface of the wafer (W) at the target temperature. After the atmospheric pressure plasma treatment is completed, the control unit (210) operates the cooling head (190) to lower the temperature of the wafer (W). After the oxidized portion of the wafer (W) is reduced through plasma treatment, it is necessary to lower the temperature of the heated wafer (W) to the initial room temperature to prevent oxidation in the air atmosphere.

[0099] FIG. 5 is a block diagram of a plasma reactor according to one embodiment of the present invention.

[0100] Referring to FIG. 5, the front of the plasma reactor (152) is depicted in the upper part of FIG. 5, and the side is depicted in the lower part.

[0101] In the original invention, the wafer (W) acts as a ground electrode, so the existence of a ground electrode is not required. However, as the wafer (W) moves, the wafer (W) approaches the anode (152a), a voltage is formed between the wafer (W) and the anode (152a), and the formed voltage reacts with the process gas to generate a plasma flame (red dashed line), but a time delay occurs, so the generation of the plasma flame may be unstable.

[0102] Accordingly, the plasma reactor (152) may further include an auxiliary electrode (152b) that generates an initial plasma frame to stably form a plasma frame. The auxiliary electrode (152b) relative to the anode (152a) is positioned near the edge of the wafer (W) passing under the anode (152a) and acts as a cathode. Thus, an initial atmospheric pressure plasma frame can be formed by a discharge occurring in the gap (G2) between the anode (152a) and the auxiliary electrode (152b).

[0103] The auxiliary electrode (152b) is in the form of a pair of L-shaped metal pieces as shown in FIG. 6 and consists of a portion that is joined to the plasma reactor (152) and a portion that forms a gap (G2).

[0104] The auxiliary electrode (152b) forms an overlap region (OL) in the Y-axis direction at both ends of the anode (152a). Additionally, the auxiliary electrode (152b) may be formed at a certain distance from the anode (152a) in the Z-axis direction and at the bottom of the anode (152a). An initial plasma flame is generated in advance in the overlap region (OL), and when the wafer (W) passes through the bottom of the anode (152a) in the direction of the arrow (M), the wafer (W) itself acts as a cathode, and based on the initial plasma flame generated in advance in the overlap region (OL), a main plasma flame is generated in the entire area between the anode (152a) and the wafer (W).

[0105] The gap (G1) between the bottom surface of the anode (152a) and the top surface of the wafer (W) can be controlled by moving the chuck moving device (168) up and down to ensure smooth generation of the plasma frame. When using argon as the plasma generating gas, it is required that the argon content be 95% or more, and when using helium, the helium content be 80% or more. The plasma gap (G1) is required to be within 6 mm from the top surface of the wafer (W) to the bottom surface of the positive electrode (152a).

[0106] FIG. 6 is an exemplary diagram of a plasma chamber according to one embodiment of the present invention.

[0107] Referring to FIGS. 4 and 6, the components constituting a semiconductor plasma processing apparatus (150) are depicted. The semiconductor plasma processing apparatus (150) is characterized by having other components combined around a plasma chamber (151), either inside or outside the plasma chamber (151), or across the inside and outside. For example, a plasma reactor (152) and a cooling head (190) can be combined across the inside and outside of the plasma chamber (151).

[0108] Figure 7 is an example of the housing of the plasma chamber depicted in Figure 6.

[0109] Referring to FIG. 7, the plasma chamber (151) may be configured to include a housing body (171), a plasma reactor cover (172), a top cover (173), and a front cover (175).

[0110] The housing body (171) corresponds to the frame of the housing of the plasma chamber (151). The housing body (171) can be combined with a plasma reactor cover (172) that can be opened and closed using a handle, a top cover (173), and a front cover (175) that can be opened and closed using a handle.

[0111] Referring to FIG. 6, a gas connection fitting (141) may be installed in the housing body (171). The gas connection fitting (141) is a device that supplies process gas and atmosphere gas into the plasma chamber (151) from the mass flow controller (153).

[0112] Referring again to FIG. 7, the plasma reactor cover (172) can be connected to the top cover (173) so as to be openable and closable. The upper end of the plasma reactor (152) is located above the plasma reactor cover (172), and the lower end of the plasma reactor (152) is located below the plasma reactor cover (172). A sealing portion (151a) is located between the plasma reactor cover (172) and the top cover (173).

[0113] The top cover (173) can be connected to the top surface of the housing body (171) so as to be openable and closable. A hole for connecting to the cooling head (190) may be formed in the top cover (173). Referring to FIG. 6, the top cover (173) may include a handle that can be used when opening and closing.

[0114] The front cover (175) can be connected to the front of the housing body (171) so as to be openable and closable.

[0115] The front cover (175) may include a handle (175a) and a viewport (174). The handle (175a) can be used to separate the front cover (175) from the housing body (171). Since the front cover (175) is separated from the housing body (171), the front of the plasma chamber (151) is exposed, which is advantageous for maintenance.

[0116] A viewport (174) may be formed on the front cover (175). The viewport (174) may be formed of a transparent material so that the interior of the plasma chamber (151) can be observed visually even without opening the front cover (175).

[0117] The plasma chamber (151) may be placed in a transport chamber (110) or in a docking device (140) as shown in FIG. 2 or FIG. 3. A bracket (176) may connect the plasma chamber (151) to the frame of the transport chamber (110) or the docking device (140).

[0118] A cable gland hole (177) may be formed on one side of the housing body (171). The cable gland hole (177) is a portion that connects with the cable gland (177a). The cable gland (177a) is configured for vacuum sealing of a wire that makes an electrical connection with an electrical load inside the plasma chamber (151).

[0119] Figure 8 is an exploded view of the plasma chamber depicted in Figure 6.

[0120] Figure 9 is a cross-sectional view of the plasma chamber depicted in Figure 6.

[0121] Referring to FIGS. 8 and 9, the plasma chamber (151) may be configured to include a lift pin assembly (165). The lift pin assembly (165) may be configured to include a pin (166) and a lift (167). The lift pin assembly (165) has the function of receiving and taking over a wafer (W) from the end effector (133) of the atmospheric pressure robot (130).

[0122] The lift (167) is configured to move up and down and is coupled with the pin (166). The pin (166) can be brought into contact with the bottom surface of the wafer (W) to receive the wafer (W) from the atmospheric pressure robot (130), and then move downward to place the wafer (W) onto the wafer heater (180). Conversely, the lift (167) can be brought into contact with the bottom surface of the wafer (W) placed on the wafer heater (180) to raise it, and then move the wafer (W) to hand over the wafer (W) to the atmospheric pressure robot (130).

[0123] After the wafer heater (180) receives the wafer (W) from the lift pin assembly (165), it can raise the temperature of the wafer (W) from room temperature using a heating wire to a target temperature suitable for activation. As described above, the wafer heater (180) can move the wafer (W) in the X-axis and Z-axis directions through the chuck moving device (168).

[0124] Referring to FIGS. 6 and 8, the cooling head (190) may be configured to include a head (191), an input nozzle (192), and a spray nozzle (not shown). The bottom surface of the head (191) may be exposed to the inside of the plasma chamber (151), and the top surface may be exposed to the outside of the plasma chamber (151), so as to be combined with the plasma chamber (151). The input nozzle (192) may be positioned on the top surface of the head (191), and the spray nozzle may be positioned on the bottom surface of the head (191). The cooling head (190) may cool the wafer (W) by receiving nitrogen through the input nozzle (192) and spraying it into the inside of the plasma chamber (151) through the spray nozzle. In addition, the cooling head (190) may prevent oxidation of the wafer (W) by forming a nitrogen atmosphere and may also remove fumes remaining on the surface of the wafer (W).

[0125] Multiple purge gas nozzles (201) may be installed inside the plasma chamber (151). The purge gas nozzles (201) may be connected to a mass flow controller (MFC) (153) through a gas connection fitting (141). The purge gas nozzles (201) have the function of converting the air inside the plasma chamber (151) into nitrogen.

[0126] FIG. 10 is a flowchart of plasma treatment prior to the process using a semiconductor plasma generator equipped in the EFEM of FIG. 2 or FIG. 3.

[0127] FIG. 11 is a flowchart of plasma treatment after a process using a semiconductor plasma generator equipped in the EFEM of FIG. 2 or FIG. 3.

[0128] Referring to FIGS. 10 and 11, a return chamber (110) equipped with a load port (111) is depicted. The return chamber (110) may be configured to include an aligner (120), an atmospheric type robot (130), and a semiconductor plasma processing device (150).

[0129] The return room (110) and the transport module (300) can be connected via a load lock (200). And a process module (400) can be connected to the transport module (300).

[0130] The EFEM (100) is in an atmospheric pressure (ATM) state and the process module (400) is in a vacuum state. The load lock (200) has the function of maintaining the vacuum state of the process module (400).

[0131] The transport module (300) is located between the load lock (200) and the process module (400) and has the function of transporting wafers. A vacuum (VTM) robot is present in the transport module (300).

[0132] Referring to FIG. 10, a plasma treatment process (S100) prior to the wafer processing process by the process module (400) is depicted.

[0133] First, the atmospheric pressure robot (130) takes out a wafer from the transfer container (112) of the load port (111) (S110).

[0134] A semiconductor plasma processing device (150) processes atmospheric pressure plasma on a wafer (S120). By processing the plasma on the wafer before the wafer processing by the process module (400), the surface of the wafer can be activated.

[0135] The wafer is moved to an aligner (120), and the aligner (120) performs alignment of the wafer (S130). Here, the order of atmospheric pressure plasma treatment (S120) and alignment (S130) may be reversed. That is, atmospheric pressure plasma can be treated on the wafer after the wafer is aligned.

[0136] The atmospheric pressure robot (130) moves the wafer to the load lock (200), and the ATM / Vacuum Switch is performed at the load lock (200) (S140).

[0137] The vacuum robot (310) transfers the wafer to the process module (400), and the process module (400) processes the wafer (S150).

[0138] The vacuum robot (310) moves the wafer back to the load lock (200), and the atmospheric pressure robot (130) moves the wafer back into the inside of the transfer container (112) (S160).

[0139] Referring to FIG. 11, a plasma treatment process (S200) after a wafer treatment process by a process module (400) is depicted.

[0140] First, the atmospheric pressure robot (130) takes out a wafer from the transfer container (112) in the load port (111) (S210).

[0141] The atmospheric pressure robot (130) moves the wafer to the aligner (120), and the aligner (120) performs alignment of the wafer (S220).

[0142] The atmospheric pressure robot (130) moves the wafer to the load lock (200), and the ATM / Vacuum Switch is performed at the load lock (200) (S230).

[0143] The vacuum robot (310) transfers the wafer from the load lock (200) to the process module (400), and the wafer is processed in the process module (400) (S240).

[0144] When the wafer processing is completed, the vacuum robot (310) moves the wafer again from the process module (400) to the load lock (200) (S250).

[0145] The semiconductor plasma processing device (150) processes atmospheric pressure plasma on the wafer (S260). By processing atmospheric pressure plasma after process processing by the process module (400), reaction residues on the wafer, such as gas and static electricity, can be removed.

[0146] The atmospheric pressure robot (130) moves the wafer back into the transfer container (112) (S270).

[0147] As such, according to one embodiment of the present invention, the plasma treatment process of a wafer can be precisely controlled by raising the temperature of the wafer to an activation temperature before plasma treatment and lowering the temperature of the wafer after plasma treatment.

[0148] In addition, reduction treatment of the wafer and removal of process residues from the wafer are possible inside the EFEM or in the space passing through the EFEM.

[0149] In addition, atmospheric pressure plasma treatment can be applied to the wafer before, after, or both before and after the wafer processing process.

[0150] Although various preferred embodiments of the present invention have been described above with some examples, the descriptions of various embodiments described in the "Specific details for carrying out the invention" section are merely illustrative, and those skilled in the art to which the present invention pertains will understand that the present invention can be modified in various ways or equivalent embodiments can be carried out based on the above description.

[0151] In addition, since the present invention can be implemented in various other forms, the present invention is not limited by the description above. The above description is provided merely to make the disclosure of the present invention complete and to fully inform those skilled in the art of the scope of the present invention, and it should be understood that the present invention is defined only by each claim of the claims.

[0152] 100: EFEM, 110: Return Chamber, 111: Load Port, 112: Transfer Container, 120: Aligner, 130: Atmospheric Robot, 131: Robot Arm, 133: End Effector, 140: Docking Device, 141: Gas Connection Fitting, 150: Semiconductor Plasma Processing Unit, 151: Plasma Chamber, 151a: Sealing Section, 152: Plasma Reactor, 152a: Anode, 153: Mass Flow Controller (MFC), 154: Matcher, 155: Power Generator, 156: Exhaust Line, 157: Pressure Control Valve, 161: Bottom Plate, 161a: Through Hole, 162: Cooling Fan, 163: Inlet / Outlet, 164: Slit Valve, 165: Lift Pin Assembly, 166: Pin, 167: Lift, 168: Chuck moving device, 171: Housing body, 172: Plasma reactor cover, 173: Top cover, 174: Viewport, 175: Front cover, 175a: Handle, 176: Bracket, 177: Cable hole, 180: Wafer heater, 190: Cooling head, 191: Head, 192: Input nozzle, 200: Load lock, 201~204: Purge gas nozzles, 210: Control unit, 300: Transport module, 310: Vacuum robot, 400: Process module

[0153] The present invention can be used in the field of EFEM development.

Claims

1. A plasma chamber having an entrance formed to allow the entry and exit of a wafer; A wafer heater installed inside the above plasma chamber and capable of raising the temperature of the wafer; A plasma reactor installed inside the above plasma chamber and treating a wafer with atmospheric pressure plasma; A cooling head installed inside the plasma chamber and capable of discharging gas to lower the temperature of the wafer; and It includes a control unit, and The above control unit is, A semiconductor plasma processing apparatus configured to execute a command to control the operation of the wafer heater by measuring the surface temperature of the wafer, a command to control the operation of the plasma reactor when the surface temperature of the wafer reaches a target temperature, and a command to control the operation of the cooling head after atmospheric pressure plasma processing is completed.

2. In Claim 1, The above wafer can enter and exit the plasma chamber by an atmospheric pressure robot of the Equipment Front End Module (EFEM), and A semiconductor plasma processing device configured such that the above plasma reactor recognizes the wafer as a ground electrode to generate direct plasma.

3. In Claim 1, The above wafer is placed on the wafer heater, and A semiconductor plasma processing apparatus configured to further include a chuck moving device capable of displacing the wafer heater in a horizontal state based on the plasma reactor.

4. In claim 1, the plasma chamber is, A semiconductor plasma processing apparatus configured to further include a viewport that enables visual verification of the wafer's condition.

5. In claim 1, the entrance and exit of the plasma chamber are, An open slit in the form of an opening; and A slit valve further configured to control the opening and closing of the above-mentioned open slit, Semiconductor plasma processing device.

6. In Claim 1, A purge gas nozzle for introducing atmospheric gas into the interior of the plasma chamber; An exhaust line connected to the above plasma chamber; and A configuration configured to further include a pressure control valve installed in the exhaust line, Semiconductor plasma processing device.

7. In Claim 6, It further includes a mass flow controller that controls the inflow of atmosphere gas through the above-mentioned purge gas nozzle, and The above control unit is, A method configured to maintain a negative pressure within the plasma chamber by controlling the mass flow controller and the pressure control valve during plasma treatment of a wafer. Semiconductor plasma processing device.

8. In Claim 6, A bottom plate further configured to be installed between the purge gas nozzle and the exhaust line and to uniformly distribute the amount of exhaust gas through perforations formed on its surface. Semiconductor plasma processing device.

9. In Claim 1, A lift pin assembly configured to further include a wafer receiving from an atmospheric pressure robot through vertical driving and placing it on the wafer heater. Semiconductor plasma processing device.

10. In claim 1, the cooling head is, A disc-shaped head coupled to an opening formed in the ceiling of the plasma chamber; An input nozzle installed on the top surface of the head and connected to a gas chamber; and A semiconductor plasma processing apparatus configured to include spray nozzles arranged in a plurality of rows and columns on the bottom surface of the head.

11. A transfer chamber configured internally for connecting to a load port, a load lock, and a process module through an opening provided on the side, and for transferring a wafer from the load port to the load lock or the process module; and The load port is equipped with a transfer container (112) for storing multiple wafers, and The above return room is, A semiconductor plasma processing apparatus that processes plasma on a wafer before, after, or before and after the wafer is processed by the above process module; An atmospheric pressure robot for transporting and transferring wafers between the transfer container and the semiconductor plasma processing device and between the semiconductor plasma processing device and the load lock; and Configured to include an aligner for aligning the position of the removed wafer, EFEM 12. In claim 11, the semiconductor plasma processing apparatus is, A plasma chamber with an entrance formed to allow the entry and exit of a wafer; A wafer heater installed inside the above plasma chamber and capable of raising the temperature of the wafer; A plasma reactor installed inside the above plasma chamber and treating a wafer with atmospheric pressure plasma; A cooling head installed inside the plasma chamber and capable of discharging gas to lower the temperature of the wafer; and It includes a control unit, and The above control unit is, An EFEM configured to include a command for controlling the operation of the wafer heater by measuring the surface temperature of the wafer, a command for controlling the operation of the plasma reactor when the surface temperature of the wafer reaches a target temperature, and a command for controlling the operation of the cooling head after atmospheric pressure plasma treatment is completed.

Images