Isotope battery and manufacturing method therefor

Abstract

Provided is an isotope battery comprising: a porous photon generation layer; radiation sources provided in the pores thereof; and sequential first and second conductive semiconductor layers provided on the photon generation layer. Use of the isotope battery and manufacturing method for same of the present invention provides isotope batteries structured to efficiently use radiation emitted from the radiation sources and also facilitate production.

Description

Isotope battery and method of manufacturing the same

[0001] The present invention relates to an isotope battery and a method for manufacturing the same, and more specifically, to an isotope battery having a structure that is easy to manufacture while efficiently utilizing radiation emitted from a radiation source, and a method for manufacturing the same.

[0002] This application claims the benefit of priority based on Korean Patent Application No. 10-2025-0013654 dated February 4, 2025 and Korean Patent Application No. 10-2026-0021464 dated February 3, 2026, and all contents disclosed in the documents of said Korean patent applications are incorporated herein as part of this specification.

[0003] Radiation emitted by a radioactive isotope can be absorbed through the surface of a pn junction semiconductor and converted into electrical energy. Electron-hole pairs are generated in the space charge region within the pn junction semiconductor by the radiation, and the carriers generated therein exhibit voltage-current characteristics. A nuclear battery unit utilizing these properties has the advantage of being able to supply power stably for a long period. There is a demand for a manufacturing method that can be manufactured more simply while efficiently using a radiation source, which is an expensive material.

[0004] The first technical objective of the present invention is to provide an isotope battery with a structure that is easy to manufacture while efficiently utilizing radiation emitted from a radiation source.

[0005] The second technical objective of the present invention is to provide a method for manufacturing an isotope battery with a structure that is easy to manufacture while efficiently utilizing radiation emitted from a radiation source.

[0006] To achieve the first technical objective, the present invention provides an isotope cell comprising: a photon generating layer having a pore structure; a radiation source provided within the pores of the pore structure; and a first conductivity semiconductor layer and a second conductivity semiconductor layer sequentially provided on the photon generating layer.

[0007] In some embodiments, the pores may have a diameter of about 2 nm to about 20 µm when measured by mercury intrusion.

[0008] In some embodiments, the pores may include mesoporous pores.

[0009] In some embodiments, the photon generating layer may include a material capable of generating photons upon incidence of alpha rays.

[0010] In some embodiments, the concentration of the radiation source within the photon generating layer may vary monotonically depending on the distance from the first conductive semiconductor layer.

[0011] In some embodiments, the concentration of the radiation source within the photon generating layer may gradually decrease as the distance from the first conductive semiconductor layer decreases.

[0012] In some embodiments, the radiation source can partially fill the pore.

[0013] In some embodiments, the radiation source can substantially completely fill the pore.

[0014] To achieve the second technical objective, the present invention provides a method for manufacturing an isotope battery comprising the steps of: manufacturing a photon generating layer having a pore structure; providing a radiation source within the pores of the pore structure; and forming a first conductivity semiconductor layer and a second conductivity semiconductor layer on the photon generating layer.

[0015] In some embodiments, the step of manufacturing the photon generation layer may include the step of sintering the powder of the energy conversion material.

[0016] In some embodiments, the step of manufacturing the photon generation layer may include: providing a sacrificial template having a porous structure; at least partially filling the sacrificial template with an energy conversion material or its precursor; and removing the sacrificial template.

[0017] In some embodiments, the step of providing a radiation source into the pore may include the step of adsorbing powder of the radiation source into the pore.

[0018] In some embodiments, the step of providing a radiation source within the pore may include the step of diffusing the radiation source within the pore.

[0019] In some embodiments, the step of forming the first conductivity semiconductor layer and the second conductivity semiconductor layer may be formed such that the first conductivity semiconductor layer and the second conductivity semiconductor layer are in contact with each other.

[0020] In some embodiments, the pores may have a diameter of about 2 nm to about 20 µm when measured by mercury intrusion.

[0021] Another aspect of the present invention comprises: a plurality of stacked isotope cell sheets; and a first external electrode of a first polarity and a second external electrode of a second polarity electrically connected to the plurality of stacked isotope cell sheets to transfer electrical energy generated in the plurality of stacked isotope cell sheets to an external load; wherein each of the plurality of isotope cell sheets comprises: a semiconductor substrate; and a photon generating layer penetrating the semiconductor substrate and having a pore structure; wherein the semiconductor substrate comprises a first conductive semiconductor layer disposed on the side of the radiation source and a second conductive semiconductor layer disposed on the side of the first region, and the radiation source is provided within the pore of the pore structure.

[0022] In some embodiments, the semiconductor substrate includes a plurality of through holes, and the photon generating layer may be provided inside each of the plurality of through holes.

[0023] In some embodiments, the plurality of through holes may be arranged on the semiconductor substrate such that the center of each is located at the vertex of a virtual equilateral triangle.

[0024] In some embodiments, the semiconductor substrate includes a plurality of slits, and the photon generating layer may be provided inside each of the plurality of slits.

[0025] In some embodiments, the plurality of isotope cell sheets may be the same die.

[0026] By using the isotope battery and the method for manufacturing the same according to the present invention, it is possible to provide an isotope battery with a structure that is easy to manufacture while efficiently utilizing radiation emitted from a radiation source.

[0027] The effects obtainable from the exemplary embodiments of the present invention are not limited to those mentioned above, and other unmentioned effects can be clearly derived and understood by those skilled in the art to which the exemplary embodiments of the present disclosure belong from the following description. That is, unintended effects resulting from the implementation of the exemplary embodiments of the present disclosure can also be derived by those skilled in the art from the exemplary embodiments of the present disclosure.

[0028] FIG. 1 is a side view showing an isotope cell according to one embodiment of the present invention.

[0029] Figure 2 is a magnified view of part A of Figure 1.

[0030] Figure 3 is a schematic diagram conceptually showing the concentration profile of a radiation source within the photon generation layer.

[0031] FIG. 4 is a flowchart illustrating a method for manufacturing an isotope battery according to one embodiment of the present invention.

[0032] FIGS. 5a to 5c are side views showing the manufacturing method of an isotope battery in sequence.

[0033] FIG. 6 is a cross-sectional view showing an isotope cell according to embodiments of the present invention.

[0034] FIGS. 7a to 7c are plan views showing the arrangement of a photon generating layer within a through-hole according to embodiments of the present invention.

[0035] FIGS. 8a and FIGS. 8b are plan views showing the arrangement of the photon generating layer within the slit according to embodiments of the present invention.

[0036] FIGS. 9 to 12c are side cross-sectional views showing isotope cells according to different embodiments of the present invention.

[0037] FIG. 13a is a side cross-sectional view showing an isotope cell according to another embodiment of the present invention.

[0038] FIG. 13b is a partially enlarged perspective view showing the first conductivity type semiconductor layer, photon generation layer, and insulating layer of the above-mentioned isotope battery.

[0039] FIG. 14 is a side cross-sectional view showing an isotope cell according to another embodiment of the present invention.

[0040] Hereinafter, preferred embodiments of the concept of the present invention will be described in detail with reference to the accompanying drawings. However, embodiments of the concept of the present invention may be modified in various different forms, and the scope of the concept of the present invention should not be interpreted as being limited by the embodiments described below. It is preferable to interpret the embodiments of the concept of the present invention as being provided to more completely explain the concept of the present invention to those with average knowledge in the art. Identical reference numerals denote identical elements throughout. Furthermore, various elements and areas in the drawings are depicted schematically. Accordingly, the concept of the present invention is not limited by the relative sizes or spacing depicted in the accompanying drawings.

[0041] Terms such as first, second, etc. may be used to describe various components, but said components are not limited by said terms. These terms are used solely for the purpose of distinguishing one component from another. For example, without departing from the scope of the concept of the present invention, the first component may be named the second component, and conversely, the second component may be named the first component.

[0042] The terms used in this application are used merely to describe specific embodiments and are not intended to limit the concept of the invention. The singular expression includes the plural expression unless the context clearly indicates otherwise. In this application, expressions such as “comprising” or “having” are intended to indicate the existence of the features, number, steps, actions, components, parts, or combinations thereof described in the specification, and should be understood as not precluding the existence or addition of one or more other features, numbers, actions, components, parts, or combinations thereof.

[0043] Unless otherwise defined, all terms used herein, including technical and scientific terms, have the same meaning as commonly understood by those skilled in the art to which the concept of the present invention pertains. Furthermore, it will be understood that commonly used terms, such as those defined in advance, should be interpreted as having meanings consistent with their intent in the context of the relevant technology, and should not be interpreted in an overly formal sense unless explicitly defined herein.

[0044] Where an embodiment can be implemented differently, a specific process sequence may be performed differently from the order described. For example, two processes described in succession may be performed substantially simultaneously or in the reverse order of the description.

[0045] In the accompanying drawings, variations of the depicted shapes may be expected, for example, depending on manufacturing technology and / or tolerances. Accordingly, embodiments of the present invention should not be interpreted as being limited to specific shapes of the areas depicted herein, but should include, for example, variations in shape resulting from the manufacturing process. All terms "and / or" used herein include each of the mentioned components and all combinations of one or more thereof. Additionally, the term "substrate" as used herein may refer to the substrate itself, or a laminated structure including the substrate and a certain layer or film formed on its surface. Furthermore, the term "surface of the substrate" in this specification may refer to the exposed surface of the substrate itself, or the outer surface of a certain layer or film formed on the substrate.

[0046]

[0047] FIG. 1 is a side view showing an isotope battery (1) according to one embodiment of the present invention. FIG. 2 is a magnified view of part A of FIG. 1.

[0048] Referring to FIGS. 1 and 2, the isotope cell (1) comprises a photon generating layer (140) and a first conductivity semiconductor layer (110) and a second conductivity semiconductor layer (120) provided on the photon generating layer (140). A radiation source (130) is provided within the photon generating layer (140).

[0049] The above photon generating layer (140) may have a porous structure including a plurality of pores (140P). The radiation source (130) may be provided within the pores.

[0050] The above photon generating layer (140) may be any material layer capable of emitting photons in response to radiation particles, such as alpha rays, emitted from the radiation source (130).

[0051] For example, the photon generating layer (140) may employ materials such as Ba2Ca(BO3)2, BaHfO3, BaI2:Ce, BeO, BaF2, BaMgF4, Cs2LiLuCi6:Ce, K2YF5, KCaF3, YI3:Ce, but is not limited to these. Various examples of the photon generating layer (140) are disclosed at https: / scintillator.lbl.gov / inorganic-scintillator-library / .

[0052] In some embodiments, the pores (140P) of the photon generating layer (140) may have a pore size of about 2 nm to about 20 µm. In some embodiments, the pores (140P) of the photon generating layer (140) may be mesoporous pores having a pore size of about 2 nm to about 50 nm. The pore size may be measured by mercury intrusion porosimetry.

[0053] In some embodiments, the pore size of the pores (140P) may be about 2 nm to about 20 µm, about 5 nm to about 18 µm, about 8 nm to about 15 µm, about 10 nm to about 13 µm, about 15 nm to about 10 µm, about 20 nm to about 8 µm, about 25 nm to about 5 µm, about 30 nm to about 3 µm, about 40 nm to about 1 µm, about 50 nm to about 800 nm, about 80 nm to about 600 nm, about 100 nm to about 500 nm, about 130 nm to about 400 nm, about 150 nm to about 300 nm, about 180 nm to about 200 nm, or a range between any two of these figures.

[0054] If the pore size of the above pores (140P) is too small, it may be difficult to adsorb the radiation source (130) within the pores (140P). If the pore size of the above pores (140P) is too large, the efficiency of converting radiation emitted from the radiation source (130) into photons may be reduced.

[0055] A radiation source (130) may be provided within the pores (140P) of the photon generating layer (140). In some embodiments, the radiation source (130) may at least partially fill the interior of the pores (140P). In some embodiments, the radiation source (130) may completely fill the interior of the pores (140P). In some embodiments, the radiation source (130) may only partially fill the interior of the pores (140P).

[0056] In some embodiments, the radiation source (130) may include a radioactive isotope that emits beta rays. For example, the radiation source (130) may be tritium ( 3 H, tritium), calcium-45( 45 Ca), nickel-63 63 Ni), copper-67 67 Cu), strontium-90 ( 90 Sr), promethium-147( 147 Pm), osmium-194( 194 OS), Thulium-171( 171 Tm), thallium-204( 204 Tl), tantalum-182( 182 Ta), cadmium-115( 115 Cd), cadmium-113( 113 Cd), germanium-75( 75 Ge), cerium-141( 141Ce), cerium-144( 144 Ce) and tungsten-185( 185 It may include one or more selected from the group consisting of W). However, the present invention is not limited to these.

[0057] In some embodiments, the radiation source (130) may include a radioactive isotope that emits alpha rays. For example, the radiation source (130) may be americium-241 ( 241 Am), americium-243( 243 Am), polonium-209( 209 Po), polonium-210( 210 Po), plutonium-238( 238 Pu), Plutonium-239 ( 239 Pu), curium-242( 242 Cm), curium-244( 244 Cm), curium-249( 249 Cm), promethium-147( 147 Pm), uranium-238( 238 U), thorium-232( 232 Th), Radium-226( 226 Ra), bismuth-210( 210 Bi), neptunium-237( 237 Np), europium-152( 152 Eu), Francium-223 223 Fr), astatine-210( 210 At), protactinium-231( 231 Pa), einsteinium-253( 253 Es), californium-252( 2520Cf), and berkelium-249( 249 It may include one or more selected from the group consisting of Bk). However, the present invention is not limited to these.

[0058] In some embodiments, the radiation source (130) may be provided in a powder state within the pores (140P). In some embodiments, the powder of the radiation source (130) may be adsorbed within the pores (140P). In some embodiments, the powder of the radiation source (130) may be physisorbed within the pores (140P).

[0059] The powder of the radiation source (130) may be mass-transferred from one surface of the photon generating layer (140). Although the present invention is not limited by any specific theory, the mass transfer may be carried out by a diffusion process. That is, the radiation source (130) may diffuse within the pores (140P).

[0060] FIG. 3 is a schematic diagram conceptually showing the concentration profile of the radiation source (130) within the photon generation layer (140).

[0061] Referring to FIG. 3, the concentration of the radiation source (130) within the photon generation layer (140) can vary monotonically depending on the distance from the first conductive semiconductor layer (110). Here, the concentration of the radiation source (130) refers to the mass of the radiation source (130) present within a unit volume of the photon generation layer (140).

[0062] In some embodiments, the concentration of the radiation source (130) within the photon generating layer (140) may gradually decrease as it approaches the first conductive semiconductor layer (110). In some embodiments, the concentration of the radiation source (130) may decrease exponentially as the distance from the first conductive semiconductor layer (110) decreases.

[0063] In some embodiments, the concentration of the radiation source (130) may be reduced to 0. In some embodiments, the concentration of the radiation source (130) may be 0 at a location spaced apart from the first conductive semiconductor layer (110). That is, the concentration of the radiation source (130) may be 0 at a predetermined depth x1 of the photon generating layer (140), where the depth x1 is smaller than the total thickness d of the photon generating layer (140).

[0064] In some embodiments, if the radiation source (130) is an alpha source and the concentration of the radiation source (130) in a portion adjacent to the first conductive semiconductor layer (110) is greater than 0, the first conductive semiconductor layer (110) may be damaged by radiation emitted from the radiation source (130).

[0065] The first conductivity type semiconductor layer (110) and the second conductivity type semiconductor layer (120) may be sequentially provided on the photon generation layer (140).

[0066] The first conductivity type semiconductor layer (110) may be doped with first conductivity type dopants within the substrate (10). In some embodiments, the first conductivity type semiconductor layer (110) may have a substantially constant thickness.

[0067] The above-described material (10) may include, for example, a III-V semiconductor material. The III-V semiconductor material may include InAlP, InGaP, InAlGaP, ZnSe, AlAs, AlAsP, or yttria-stabilized zirconia (YSZ).

[0068] In some embodiments, the substrate (10) may include a diamond substrate, a SiC substrate, a GaN substrate, a Bi2O3 / GeO2 substrate, a Sm2O3 / Bi2O3 / GeO2 substrate, a Sm2O3 / Bi2O3 / B2O3 substrate, a Sm2O3 / Bi2O3 / GeO2 / B2O3 substrate, a sapphire substrate, or a combination thereof, and these may be undoped substrates.

[0069] In some other embodiments, the substrate (10) may include a diamond substrate, a SiC substrate, a GaN substrate, a Bi2O3 / GeO2 substrate, a Sm2O3 / Bi2O3 / GeO2 substrate, a Sm2O3 / Bi2O3 / B2O3 substrate, a Sm2O3 / Bi2O3 / GeO2 / B2O3 substrate, a sapphire substrate, or a combination thereof, and these may be substrates doped with a dopant.

[0070] In some other embodiments, the above description (10) may have the chemical formula AMO3 (wherein A is one or more selected from the group consisting of La, Ba, Sr, and K, and M is one or more selected from the group consisting of Al, In, Ga, Ti, Sn, Hf, Ta, and Zr).

[0071] Specifically, the above material (10) is BaSnO3, BaHfO3, BaZrO3, BaHf 1-x Ti x O3(here 0 <x<1), Ba 1-x La x SnO3(here 0 <x<1), Bi4Ge3O 12 , Al2O3, Y2O3, La2O3, Ga2O3, Bi2O3, ZrO2, HfO2, Ta2O5, TiO2, LaInO3, LaGaO3, SrZrO3, SrHfO3, SrTaO7, LaIn 1-x Ga x O3(here 0 <x<1), LaGaO3, SrTiO3, KTaO3, HfSiO4, Ta3Ti2O xIt may include one or more selected from the group consisting of and LaAlO3 (where 0 <x<1).

[0072] In some embodiments, the substrate (10) may include a semiconductor substrate. In some embodiments, the substrate (10) may include an insulating substrate.

[0073] In some embodiments, the first conductivity semiconductor layer (110) may comprise a metal oxide having a bandgap energy of 2.7 eV or more. In some embodiments, the metal oxide may have the chemical formula AMO3 (wherein A is one or more selected from the group consisting of La, Ba, Sr, and K, and M is one or more selected from the group consisting of Al, In, Ga, Ti, Sn, Hf, Ta, and Zr).

[0074] Specifically, the metal oxides are BaSnO3, BaHfO3, BaZrO3, and BaHf 1-x Ti x O3(here 0 <x<1), Ba 1-x La x SnO3(here 0 <x<1), Bi4Ge3O 12 , Al2O3, Y2O3, La2O3, Ga2O3, Bi2O3, ZrO2, HfO2, Ta2O5, TiO2, LaInO3, LaGaO3, SrZrO3, SrHfO3, SrTaO7, LaIn 1-x Ga x O3(here 0 <x<1), LaGaO3, SrTiO3, KTaO3, HfSiO4, Ta3Ti2O x It may include one or more selected from the group consisting of and LaAlO3 (where 0 <x<1).

[0075] The metal oxide is not only stable even in high temperature and high humidity environments, but also has high carrier mobility, so it can efficiently absorb radiation emitted from the radiation source (130) and / or photons emitted from the photon generating layer (140), thereby providing high energy conversion efficiency. In addition, there are no inelastic collisions during carrier movement, so there is no energy loss and it is advantageous for heat dissipation. For example, the metal oxide is 45 cm 2 / (V·s) or more, 80 cm 2 / (V·s) or more, 120 cm 2 / (V·s) or more, furthermore 300 cm 2 It can have a high carrier mobility of / (V·s) or higher.

[0076] These metal oxides are bidirectional doping materials and have the advantage of being able to provide high current or high voltage depending on the direction of the applied bias.

[0077] The above isotope battery (1) further includes a second conductivity type semiconductor layer (120). In some embodiments, the second conductivity type semiconductor layer (120) may be provided spaced apart from the photon generating layer (140) with the first conductivity type semiconductor layer (110) in between.

[0078] In some embodiments, the second conductivity type semiconductor layer (120) may be doped with second conductivity type dopants within the semiconductor layer forming the substrate.

[0079] The substrate of the second conductivity type semiconductor layer (120) may be the same as the substrate described in relation to the first conductivity type semiconductor layer (110). In some embodiments, the substrate of the second conductivity type semiconductor layer (120) may be the same as the substrate of the first conductivity type semiconductor layer (110). In other embodiments, the substrate of the second conductivity type semiconductor layer (120) may be different from the substrate of the first conductivity type semiconductor layer (110).

[0080] In some embodiments, the first conductivity semiconductor layer (110) may be doped with a first conductivity dopant. The second conductivity semiconductor layer (120) may be doped with a second conductivity dopant. The first conductivity semiconductor layer (110) and the second conductivity semiconductor layer (120) may generate electron-hole pairs by radiation emitted from the radiation source (130) and / or photons emitted from the photon generating layer (140).

[0081] In some embodiments, the first conductivity type dopant may be an n-type dopant and the second conductivity type dopant may be a p-type dopant. In other embodiments, the first conductivity type dopant may be a p-type dopant and the second conductivity type dopant may be an n-type dopant. A person skilled in the art will understand that, depending on the conductivity type of the dopant doped in each region, one of the first conductivity type semiconductor layer (110) and the second conductivity type semiconductor layer (120) may operate as a cathode and the other as an anode. That is, if the first conductivity type dopant is an n-type dopant and the second conductivity type dopant is a p-type dopant, the first conductivity type semiconductor layer (110) may act as an anode and the second conductivity type semiconductor layer (120) may act as a cathode. Conversely, if the first conductivity type dopant is a p-type dopant and the second conductivity type dopant is an n-type dopant, the first conductivity type semiconductor layer (110) can act as a cathode and the second conductivity type semiconductor layer (120) can act as an anode.

[0082] The region doped with the above n-type dopant may be a semiconductor region doped with, for example, nitrogen (N), phosphorus (P), arsenic (As), or antimony (Sb), which are Group 15 elements of the periodic table, or a compound semiconductor doped with nitrogen (N), phosphorus (P), arsenic (As), or antimony, which are Group 15 elements of the periodic table. In this specification, a compound semiconductor refers to a semiconductor composed of two or more elements, and may be, for example, silicon carbide, silicon oxide, aluminum phosphide (AlP), aluminum arsenide (AlAs), gallium arsenide (GaAs), or gallium nitride (GaN).

[0083] The region doped with the above p-type dopant may be a semiconductor region doped with, for example, boron (B), aluminum (Al), gallium (Ga), or indium (In), which are group 13 elements of the periodic table, or a compound semiconductor doped with boron (B), aluminum (Al), gallium (Ga), or indium (In), which are group 13 elements of the periodic table.

[0084] In some embodiments, the first conductivity semiconductor layer (110) and / or the second conductivity semiconductor layer (120) may include an organic material used in organic layers that receive light and generate power in fields such as solar cells. For example, the first conductivity semiconductor layer (110) and / or the second conductivity semiconductor layer (120) may include a thiophene-type compound. Meanwhile, the first conductivity semiconductor layer (110) and / or the second conductivity semiconductor layer (120) may be an organic-inorganic hybrid type by appropriately mixing the aforementioned inorganic material and organic material.

[0085] In some embodiments, a depletion region may be formed near the interface where the first conductivity semiconductor layer (110) and the second conductivity semiconductor layer (120) come into contact with each other.

[0086] The above-described isotope battery (1) may include a first electrode (105a) and a second electrode (105b) capable of transmitting generated electrical energy to the outside. The type, size, and shape of the first electrode (105a) and the second electrode (105b) are not particularly limited as long as they possess electrical conductivity without causing physical and chemical changes in the isotope battery (1). For example, the first electrode (105a) and the second electrode (105b) may be cylindrical, tetrahedral, hexahedral, torus-shaped, or pad-shaped. In some embodiments, the first electrode (105a) and the second electrode (105b) may each independently include a metal material such as gold (Au), silver (Ag), platinum (Pt), stainless steel, copper (Cu), aluminum (Al), nickel (Ni), or titanium (Ti), or include a transparent oxide such as fluorine (F)-doped tin oxide (FTO) or indium oxide (ITO, In2O3), or include a carbon-based compound such as a carbon nanotube, graphene, or graphene oxide.

[0087] FIG. 4 is a flowchart illustrating a method for manufacturing an isotope battery (1) according to one embodiment of the present invention. FIG. 5a to 5c are side views illustrating the method for manufacturing an isotope battery (1) in sequence.

[0088] Referring to FIGS. 4 and FIGS. 5a, a photon generating layer (140) having a pore structure is manufactured (S10).

[0089] The photon generating layer (140) having a porous structure can be manufactured in various ways known to a person skilled in the art and is not particularly limited.

[0090] In some embodiments, the photon generating layer (140) may be formed by sintering. That is, by applying heat and pressure to powder particles of an energy conversion material to form the photon generating layer (140), the powder particles may be bonded together and pores (140P) may be formed between the powder particles.

[0091] The energy conversion material may be any material capable of emitting photons in response to radiation particles, such as alpha rays, emitted from the radiation source (130). Examples of the energy conversion material may include the materials previously exemplified as materials for the photon generating layer (140). Various examples of the energy conversion material are disclosed at https: / scintillator.lbl.gov / inorganic-scintillator-library / .

[0092] In some embodiments, the particles of the energy conversion material may be heat-treated at a temperature elevated to a temperature below the melting point. In some embodiments, the particles of the energy conversion material may be heat-treated at a pressure higher than atmospheric pressure.

[0093] In some embodiments, the energy conversion material may be sintered on a support having a support surface. The support may then be removed from the photon generating layer (140) created by the sintering.

[0094] In some embodiments, the photon generating layer (140) may be manufactured using a sacrificial template. Specifically, the photon generating layer (140) may provide a sacrificial template having a porous structure and may fill the pores within the sacrificial template with an energy conversion material or its precursor.

[0095] In some embodiments, the step of providing the sacrifice template and the step of providing the energy conversion material or its precursor within the sacrifice template may be performed substantially simultaneously. In some embodiments, the sacrifice template and the energy conversion material or its precursor provided within the sacrifice template may be provided substantially simultaneously by a sol-gel process.

[0096] Subsequently, a photon generation layer (140) having a porous structure can be obtained by removing the sacrificial template and leaving the energy conversion material. The sacrificial template may be selected as a material having different chemical properties from the energy conversion material and may be removed by chemical etching. That is, a material that is etch-selective to the energy conversion material may be used as the sacrificial template.

[0097] In some embodiments, the pores (140P) of the photon generating layer (140) may have a pore size of about 2 nm to about 20 µm. In some embodiments, the pores (140P) of the photon generating layer (140) may be mesoporous pores having a pore size of about 2 nm to about 50 nm. The pore size may be measured by mercury intrusion porosimetry.

[0098] Referring to FIGS. 4 and 5b, a radiation source (130) is provided within a pore (140P) of the pore structure (S20).

[0099] The radiation source (130) may be in powder form and may have an average diameter of several nm to several μm. The radiation source (130) is transferred to one side surface of the photon generating layer (140) by convection, and may be transferred by diffusion from the entrance of the pore (140P) of the photon generating layer (140) into the interior of the pore (140P).

[0100] In some embodiments, since the radiation source (130) is delivered by diffusion into the pores (140P) of the photon generating layer (140), the concentration of the radiation source (130) may decrease along the diffusion path within the pores (140P). In some embodiments, the concentration of the radiation source (130) may decrease exponentially along the diffusion path within the pores (140P).

[0101] In some embodiments, the radiation source (130) may be adsorbed on the inner surface of the pore (140P) inside the pore (140P). In some embodiments, the radiation source (130) may be physically adsorbed on the inner surface of the pore (140P) inside the pore (140P).

[0102] Referring to FIGS. 4 and FIGS. 5c, a first conductivity semiconductor layer (110) and a second conductivity semiconductor layer (120) are formed on the photon generating layer (140) (S30).

[0103] In some embodiments, the first conductivity semiconductor layer (110) and the second conductivity semiconductor layer (120) may be formed to be in contact with each other.

[0104] In some embodiments, the first conductivity semiconductor layer (110) and the second conductivity semiconductor layer (120) may be bonded onto the photon generation layer (140) after being prepared separately. That is, the first conductivity semiconductor layer (110) and the second conductivity semiconductor layer (120) may be formed on separate semiconductor substrates so as to be in contact with each other and then provided onto the photon generation layer (140). In some embodiments, another material layer may be provided between the photon generation layer (140) and the first conductivity semiconductor layer (110) and the second conductivity semiconductor layer (120). In some embodiments, the material layer may include an insulating layer.

[0105] In some embodiments, the first conductivity semiconductor layer (110) and the second conductivity semiconductor layer (120) may be formed by being deposited on the photon generating layer (140). In some embodiments, the first conductivity semiconductor layer (110) and the second conductivity semiconductor layer (120) may each be formed independently by methods such as chemical vapor deposition, physical vapor deposition (PVD), atomic layer deposition (ALD), and epitaxial growth. In some embodiments, the first conductivity semiconductor layer (110) and the second conductivity semiconductor layer (120) may be formed by ion implantation.

[0106] Subsequently, a first electrode (105a) and a second electrode (105b) electrically connected to the first conductivity type semiconductor layer (110) and the second conductivity type semiconductor layer (120) may be formed.

[0107]

[0108] FIG. 6 is a side cross-sectional view showing an isotope battery (2) according to another embodiment of the present invention.

[0109] Referring to FIG. 6, the isotope cell (2) may include a plurality of isotope cell sheets (20) stacked in the vertical direction V or in the thickness direction of the substrate (10).

[0110] Each of the plurality of isotope cell sheets (20) may include a substrate (10) and a photon generating layer (140). The photon generating layer (140) may be positioned to penetrate the substrate (10).

[0111] The above substrate (10) may include a first surface and a second surface located opposite to the first surface in the thickness direction (T) of the above substrate (10). The first surface and the second surface may be the upper main surface and the lower main surface of the above substrate (10), respectively.

[0112] The above-described material (10) may include a first conductive semiconductor layer (110) disposed on the side of the photon generating layer (140) and a second conductive semiconductor layer (120) disposed on the side of the first conductive semiconductor layer (110).

[0113] Generally, as conceptually illustrated in FIG. 6, the first conductive semiconductor layer (110) and the second conductive semiconductor layer (120) may be arranged adjacent to each other. The first conductive semiconductor layer (110) and the second conductive semiconductor layer (120) may be arranged alternately and / or repeatedly along the direction of the first surface and the second surface of the substrate (10), that is, in a transverse direction (C) perpendicular to the thickness direction (T) of the substrate (10). For example, the first conductive semiconductor layer (110) and the second conductive semiconductor layer (120) may form an interface extending in the thickness direction (T) of the substrate (10). At the interface, the first conductive semiconductor layer (110) and the second conductive semiconductor layer (120) may form a pn junction.

[0114] The photon generating layer (140) may be disposed within the substrate (10). For example, the photon generating layer (140) may penetrate the entire substrate (10) in the thickness direction (T) of the substrate (10), extending, for example, from the first surface (i.e., upper main surface) to the second surface (i.e., lower main surface). To this end, the photon generating layer (140) may be disposed within a through hole (101) formed on the first surface of the substrate (10). The through hole (101) may extend from the first surface of the substrate (10) toward the second surface. Optionally, the through hole (101) may extend completely from the first surface of the substrate (10) to the second surface, as illustrated in FIG. 6.

[0115] The above photon generating layer (140) may have a porous structure including a plurality of pores (140P) (see FIG. 2), as described with reference to FIG. 2. Furthermore, the radiation source (130) may be provided within the pores.

[0116] The above photon generating layer (140) may be any material layer capable of emitting photons in response to radiation particles emitted from the radiation source (130), such as alpha rays, beta rays, or gamma rays.

[0117] The first conductivity semiconductor layer (110) and the second conductivity semiconductor layer (120) can generate electron-hole pairs by photons emitted from the photon generating layer (140). In one example, the first conductivity semiconductor layer (110) and the second conductivity semiconductor layer (120) may be provided as an inorganic layer, an organic layer, a dye-sensitized layer, or a combination thereof, and can generate power by forming electron-hole pairs by radiation.

[0118] In some embodiments, the photon generating layer (140) may be provided within a through hole (101) penetrating the substrate (10). The through hole (101) may be formed on the first surface of the substrate (10). For example, the photon generating layer (140) may completely or partially fill the through hole (101). In some embodiments, the photon generating layer (140) may be in contact with the outer edge of the through hole (101). FIGS. 7a through 7c are plan views illustrating the arrangement of the photon generating layer (140) within the through hole (101) according to embodiments of the present invention.

[0119] Referring to FIG. 7a, the substrate (10) is provided with a plurality of through holes (101) penetrating the substrate (10), and the photon generating layer (140) may be disposed within the through holes (101). The through holes (101) may have a circular cross-section as shown in FIG. 7a. Optionally, the through holes (101) may have a regular polygonal cross-section, such as a triangle, square, pentagon, hexagon, etc.

[0120] The through holes (101) may be formed by any method known to those skilled in the art. For example, the through holes (101) may be formed by methods such as anisotropic etching, isotropic etching, laser irradiation, etc. In some embodiments, the through holes (101) may be formed by irradiating a substrate (10) with laser light. In some embodiments, the through holes (101) may be formed by reactive ion etching (RIE).

[0121] In some embodiments, the through holes (101) may be arranged according to a predetermined rule or pattern. In some embodiments, the through holes (101) may be positioned so that their respective centers are located at the vertices of imaginary equilateral triangles arranged in a continuous sequence.

[0122] By arranging the centers of the above-mentioned through holes (101) to be located at the vertices of virtual equilateral triangles, the number of photon generating layers (140) that can be accommodated per unit area can be maximized. Thus, the energy density of the isotope cell (2) can be further improved.

[0123] In some embodiments, the first conductivity semiconductor layer (110) may be arranged to surround the side of the photon generation layer (140). In some embodiments, the second conductivity semiconductor layer (120) may be arranged to surround the side of the first conductivity semiconductor layer (110). Referring to FIG. 7a, the first conductivity semiconductor layer (110) has an annular shape surrounding the outer edge of each photon generation layer (140), and the second conductivity semiconductor layer (120) surrounds the annular first conductivity semiconductor layer (110). The first conductivity semiconductor layer (110) may include a semiconductor material of a specific conductivity type, and the second conductivity semiconductor layer (120) may include a semiconductor material of a different conductivity type.

[0124] Referring to FIG. 7b, the sidewalls of the through holes (101) may have irregularities. That is, the through holes (101) may have concave and convex portions. The interface between the photon generating layer (140) and the first conductive semiconductor layer (110) may have irregularities. In some embodiments, the interface between the first conductive semiconductor layer (110) and the second conductive semiconductor layer (120) may have irregularities.

[0125] The first conductive semiconductor layer (110) may have a substantially constant lateral thickness as shown in FIG. 7b. Accordingly, the interface between the first conductive semiconductor layer (110) and the second conductive semiconductor layer (120) may have a shape corresponding to the interface between the photon generating layer (140) and the first conductive semiconductor layer (110).

[0126] By having the side walls of the through holes (101) have irregularities, the contact area between the photon generating layer (140) and the first conductive semiconductor layer (110) can be increased, and accordingly, the efficiency of the photon generating layer (140) can be improved. In addition, by having the interface between the first conductive semiconductor layer (110) and the second conductive semiconductor layer (120) have an irregular shape, the contact area between the first conductive semiconductor layer (110) and the second conductive semiconductor layer (120) can be increased, and accordingly, the efficiency of the isotope battery (2) can be improved.

[0127] Referring to FIG. 7c, the center of each through hole (101) may be arranged to be located at the vertex of a series of imaginary isosceles triangles. As in FIG. 7a, the center of each through hole (101) may not necessarily be located at the vertex of a series of imaginary equilateral triangles.

[0128] In some embodiments, the triangle in which the center of each of the through holes (101) is placed may be a triangle having some different shape. Accordingly, the through holes (101) may be arranged somewhat irregularly.

[0129] In some embodiments, the photon generating layer (140) may be disposed within a slit penetrating the substrate (10). FIGS. 8a and FIGS. 8b are plan views illustrating the form in which the photon generating layer (140) is disposed within the slit (102) according to embodiments of the present invention. Referring to FIG. 8a, the substrate (10) may include a plurality of slits (102) extending parallel in one direction. Additionally, the photon generating layer (140) may be provided within the slits (102). As illustrated in FIG. 8a, the slits (102) may be extended in a first direction (R1), and the length thus extended is greater than the width of the slit (102) in a second direction (R2). The first direction (R1) is perpendicular to the thickness direction (T) of the substrate (10), and the second direction (R2) is perpendicular to the first direction (R1) and the thickness direction (T).

[0130] In some embodiments, a side of the photon generating layer (140) may come into contact with a side of the slits (102). The photon generating layer (140) may come into contact with the outer edge of the slit (102).

[0131] In some embodiments, the first conductive semiconductor layer (110) may be positioned to face the elongated side of the photon generation layer (140). The first conductive semiconductor layer (110) may face both elongated sides of the photon generation layer (140). For example, the first conductive semiconductor layer (110) may extend along two longitudinal sides extending in the first direction (R1) of the slit (102). More preferably, as shown in FIG. 8a, the first conductive semiconductor layer (110) may completely surround the elongated slit (102) laterally. Generally, the first conductive semiconductor layer (110) may be positioned to completely or at least partially surround the photon generation layer (140).

[0132] In some embodiments, the second conductive semiconductor layer (120) may be positioned to face the long-extended side of the first conductive semiconductor layer (110). For example, the second conductive semiconductor layer (120) may extend along the portion of the first conductive semiconductor layer (110) that extends along the longitudinal side of the slit (102).

[0133] In some embodiments, the first conductive semiconductor layer (110) may be arranged to surround the side of the photon generating layer (140). In some embodiments, the second conductive semiconductor layer (120) may be arranged to at least partially surround the side of the first conductive semiconductor layer (110). In some embodiments, as illustrated exemplarily in FIG. 8a, the second conductive semiconductor layer (120) may completely surround the first conductive semiconductor layer (110) laterally.

[0134] Referring to FIG. 8b, the sidewalls of the slits (102) may have irregularities. That is, the slits (102) may have concave and convex portions. The interface between the photon generating layer (140) and the first conductive semiconductor layer (110) may have irregularities.

[0135] The side walls of the above slits (102) have irregularities, thereby increasing the contact area between the photon generation layer (140) and the first conductive semiconductor layer (110), and accordingly, the efficiency of the photon generation layer (140) can be improved.

[0136] In FIGS. 6 to 8b, the entire portion of the substrate (10) other than the first conductivity type semiconductor layer (110) is depicted as the second conductivity type semiconductor layer (120), but the present invention is not limited thereto. In FIGS. 6 to 8b, there may be regions of other conductivity types or dopant concentrations within the second conductivity type semiconductor layer (120), and there may be regions that are not doped with a specific conductivity type.

[0137] Referring again to FIG. 6, the plurality of isotope cell sheets (20) may be stacked identical semiconductor dies. Each of the isotope cell sheets (20) may include a first upper electrode (132) on top of the first conductive semiconductor layer (110) and a first lower electrode (152) on the bottom of the first conductive semiconductor layer (110). In other words, the first upper electrode (132) may be electrically in contact with the first conductive semiconductor layer (110) on the first surface, and the first lower electrode (152) may be electrically in contact with the first conductive semiconductor layer (110) on the second surface.

[0138] Additionally, each of the above isotope battery sheets (20) may include a second upper electrode (134) on the upper side of the second conductive semiconductor layer (120) and a second lower electrode (154) on the lower side of the second conductive semiconductor layer (120). In other words, the second upper electrode (134) may be electrically in contact with the second conductive semiconductor layer (120) on the first surface, and the second lower electrode (154) may be electrically in contact with the second conductive semiconductor layer (120) on the second surface.

[0139] Each of the first upper electrode (132), first lower electrode (152), second upper electrode (134), and second lower electrode (154) can substantially function as a current collector. The type, size, and shape of each of the first upper electrode (132), first lower electrode (152), second upper electrode (134), and second lower electrode (154) are not particularly limited as long as they possess electrical conductivity without causing physical and chemical changes to the isotope battery sheet (20). For example, each of the first upper electrode (132), first lower electrode (152), second upper electrode (134), and second lower electrode (154) may be cylindrical, tetrahedral, hexahedral, torus-shaped, or pad-shaped. Additionally, each of the first upper electrode (132), the first lower electrode (152), the second upper electrode (134), and the second lower electrode (154) may have a shape with a hollow central portion. In some embodiments, the second upper electrode (134) on the first surface may be a continuous layer including openings arranged to correspond, for example, to the first conductive semiconductor layer (110), and the first upper electrodes (132) may be arranged within the openings. Similarly, on the second surface, the second lower electrode (154) may be a continuous layer including openings arranged to correspond, for example, to the first conductive semiconductor layer (110), and the first lower electrodes (152) may be arranged within the openings.

[0140] Additionally, for example, each of the first upper electrode (132), the first lower electrode (152), the second upper electrode (134), and the second lower electrode (154) may include a metal material such as gold (Au), silver (Ag), platinum (Pt), stainless steel, copper (Cu), aluminum (Al), nickel (Ni), or titanium (Ti), or a transparent oxide such as tin oxide (FTO) or indium oxide (ITO, In2O3) doped with fluorine (F), or a carbon-based compound such as a carbon nanotube, graphene, or graphene oxide.

[0141] The first lower electrode (152) of the isotope cell sheet (20) located at the top can be electrically connected to the first upper electrode (132) of the isotope cell sheet (20) located at the bottom. In some embodiments, the first lower electrode (152) of the isotope cell sheet (20) located at the top and the first upper electrode (132) of the isotope cell sheet (20) located at the bottom can be connected by a connector (240), such as a solder ball.

[0142] In one example, the connector (240) may include a conductive material. Here, the conductive material may include one or more selected from the group consisting of, for example, tin (Sn), indium (In), bismuth (Bi), antimony (Sb), copper (Cu), silver (Ag), zinc (Zn), and lead (Pb). The number, spacing, arrangement, and shape of the connectors (240) may be changed according to the design without being limited to those illustrated. Referring to FIG. 1, the connector (240) may have the form of a solder ball or a solder bump.

[0143] The space between two adjacent isotope cell sheets (20) in the vertical direction can be filled by an insulator (160). The insulating layer (160) is not particularly limited to any material having electrical insulating properties, but may include, for example, one or more selected from the group consisting of silicate (e.g. TEOS), silicon nitride (SiN, silicon nitride), hafnium oxide, hafnium silicon oxide, hafnium aluminum oxide, lanthanum oxide, lanthanum aluminum oxide, zirconium oxide, zirconium silicon oxide, tantalum oxide, titanium oxide, barium strontium titanium oxide, barium titanium oxide, strontium titanium oxide, yttrium oxide, and aluminum oxide.

[0144] The isotope cell (2) illustrated in FIG. 6 can be obtained by manufacturing individual isotope cell sheets (20) and then stacking them. When individual isotope cell sheets (20) are manufactured and then stacked, only defective isotope cell sheets (20) can be selected and excluded from the stacking process, so the manufacturing yield of the isotope cell (2) can be improved and the manufacturing cost can be reduced.

[0145] The plurality of isotope battery sheets (20) can be housed within a housing (190). Additionally, the plurality of isotope battery sheets (20) can be electrically connected to an external load by a conductor that passes through the housing (190) and extends to the outside.

[0146] In some embodiments, the housing (190) may further include an electromagnetic interference (EMI) shield (not shown) capable of shielding electromagnetic waves. The EMI shield may be formed on at least a portion of the inner surface and / or outer surface of the housing (190). The EMI shield may include, for example, a metal such as copper or aluminum, a conductive polymer such as polyaniline, or a magnetic material such as iron oxide. Additionally, the EMI shield may be provided in the form of a sheet, mesh, coating layer, spray coating, nonwoven fabric, tape, or fabric layer. By faithfully providing the EMI shield in the housing (190), electromagnetic compatibility (EMC) of the isotope cell (2) can be ensured. Furthermore, in some embodiments, the EMI shield may prevent or reduce beta rays or other radiation (e.g., alpha rays or gamma rays) from escaping the housing.

[0147] The first upper electrodes (132) of the isotope cell sheet (20) positioned at the top of FIG. 6 can be electrically connected to each other and electrically connected to the first external electrode (105a) of the first polarity. Also, the second lower electrode (154) of the isotope cell sheet (10) positioned at the bottom of FIG. 1a can be electrically connected to the second external electrode (105b) of the second polarity. The first external electrode (105a) and the second external electrode (105b) can be exposed to the outside of the housing (190) to be connected to an external load.

[0148] In some embodiments, the second lower electrodes (154) of the isotope cell sheet (20) placed at the bottom in FIG. 6 may be electrically connected to each other while surrounding the first lower electrode (152). In some embodiments, the second lower electrodes (154) may be electrically connected to each other by a separate conductive line (not shown) and connected to the second external electrode (105b) exposed outside the housing (190).

[0149] FIG. 9 is a side cross-sectional view showing an isotope cell (2a) according to another embodiment of the present invention.

[0150] Referring to FIG. 9, the isotope cell (2a) may have a first isotope cell sheet (21) and a second isotope cell sheet (22) alternately stacked.

[0151] The first isotope cell sheet (21) above is generally the same as the isotope cell sheet (20) described with reference to FIG. 6, so a detailed description is omitted here.

[0152] The second isotope battery sheet (22) is generally identical to each component of the first isotope battery sheet (21), but differs in that the conductivity type of the dopant is opposite. That is, if the first conductivity type semiconductor layer (110) of the first isotope battery sheet (21) is doped with p-type, the first conductivity type semiconductor layer (110) of the second isotope battery sheet (22) may be doped with n-type. Conversely, if the first conductivity type semiconductor layer (110) of the first isotope battery sheet (21) is doped with n-type, the first conductivity type semiconductor layer (110) of the second isotope battery sheet (22) may be doped with p-type.

[0153] Likewise, if the second conductivity semiconductor layer (120) of the first isotope battery sheet (21) is doped with p-type, the second conductivity semiconductor layer (120) of the second isotope battery sheet (22) may be doped with n-type. Conversely, if the second conductivity semiconductor layer (120) of the first isotope battery sheet (21) is doped with n-type, the second conductivity semiconductor layer (120) of the second isotope battery sheet (22) may be doped with p-type.

[0154] The isotope cell (2a) illustrated in FIG. 9 can obtain higher voltage electrical energy because the number of unit cells corresponding to individual photon generating layers (140) connected in series increases. The photon generating layer (140) may have a porous structure including a plurality of pores (140P) (see FIG. 2), as described with reference to FIG. 2. Furthermore, the radiation source (130) may be provided within the pores.

[0155] In FIG. 9, since the pn junctions are connected in series such that the total output voltage is the sum of the voltages generated at the individual pn junctions, the first external electrode (105a) and the second external electrode (105b) can have a higher operating voltage than the isotope cell (1) in FIG. 6.

[0156] FIG. 10 is a side cross-sectional view showing an isotope cell (2b) according to one embodiment of the present invention.

[0157] The isotope cell (2b) illustrated in FIG. 10 is generally the same as the isotope cell (2) described with reference to FIG. 6 to 8b, but differs in that a plurality of isotope cell sheets (20) are enclosed by a molding member (192) and a plurality of isotope cell sheets (20) are mounted on a controller chip (300). Therefore, the following description focuses on these differences and omits descriptions of common parts. It will be understood by a person skilled in the art that not only the isotope cells (2, 2a) of FIG. 6 to 9, but also the isotope cells of FIG. 11, FIG. 12a, FIG. 13a, and FIG. 14 described later, may be mounted on a controller chip (300) and / or enclosed within a molding member (192).

[0158] Referring to FIG. 10, the plurality of isotope cell sheets (20) are mounted on a controller chip (300). In some embodiments, the controller chip (300) may include a power management integrated circuit (PMIC) that outputs electrical energy generated from the stacked plurality of isotope cell sheets (20) to the outside according to a predetermined rule.

[0159] The plurality of isotope cell sheets (20) can be molded by a molding member (192). The molding member (192) may include, for example, an epoxy molding compound (EMC).

[0160] When the plurality of isotope cell sheets (20) are electrically connected to a controller chip (300) through first and second lower electrodes (152, 154) provided on the lowest isotope cell sheet (20) as exemplarily illustrated in FIG. 10, the first upper electrode (132) and the second upper electrode (134) of the uppermost isotope cell sheet (20) may act as dummy electrodes. In some embodiments, at least one of the first upper electrode (132) and the second upper electrode (134) placed on the uppermost of the plurality of isotope cell sheets (20) may be exposed to the outside through the molding member (192).

[0161] In another embodiment, the first upper electrode (132) and the second upper electrode (134) placed at the top of the plurality of isotope cell sheets (20) may be completely covered by the molding member (192). In some embodiments, the first upper electrode (132) and the second upper electrode (134) may be omitted from the upper surface of the isotope cell sheet (10) placed at the top of the plurality of isotope cell sheets (20), and instead may be covered by a passivation layer or a molding member (192), or by a passivation layer and a molding member (192).

[0162] The electrical energy generated from the plurality of isotope battery sheets (20) can be supplied to an external load through external terminals (310a, 310b) provided to the controller chip (300). Although FIG. 10 shows the plurality of isotope battery sheets (20) mounted on the upper part of the controller chip (300), the present invention is not limited thereto.

[0163]

[0164] FIG. 11 is a side cross-sectional view showing an isotope cell (2c) according to another embodiment of the present invention.

[0165] Referring to FIG. 11, the isotope cell (2c) may include a plurality of isotope cell sheets (20b) stacked in the vertical direction (V), that is, in the thickness direction of the substrate (10).

[0166] The above isotope battery sheet (20b) differs from the isotope battery sheet (20) of FIG. 6 in that the lower electrodes (152, 154) and the connector (240) are omitted. Therefore, the following description will focus on these differences and will omit the description of the common parts.

[0167] The above isotope cell sheet (20b) includes a first upper electrode (132) and a second upper electrode (134) on its upper surface. In some embodiments, the isotope cell sheets (20b) of the stacked plurality of isotope cell sheets (20b) may all be the same semiconductor dies.

[0168] The first upper electrode (132) and the second upper electrode (134) of the isotope battery sheet (20b) located at the bottom can each come into direct contact with the bottom surfaces of the first conductive semiconductor layer (110) and the second conductive semiconductor layer (120) of the isotope battery sheet (20b) located at the top. In other words, the first upper electrode (132) and the second upper electrode (134) on each isotope battery sheet (20b) are provided only on the first surface, which is the upper main surface, and the second surface, which is the lower main surface, can come into electrical contact with the first upper electrode (132) and the second upper electrode (134) of the isotope battery sheet (20b) placed immediately below it.

[0169] The above isotope cell (2c) can be configured more compactly by omitting the lower electrodes (152, 154) and the connector (240), thereby increasing energy density. Optionally, the first conductivity semiconductor layers (110) of the isotope cell sheet (20b) and the second conductivity semiconductor layers (120) of the adjacent isotope cell sheet (20b) can be arranged to be in direct contact with each other. In this case, the electrodes between adjacent isotope cell sheets within the stack can be omitted.

[0170]

[0171] FIG. 12a is a side cross-sectional view showing an isotope cell (2d) according to another embodiment of the present invention. FIG. 12b is a plan view of the isotope cell sheet of the isotope cell of FIG. 12a. FIG. 12c is a cross-sectional view showing a cross section cut along line XX of FIG. 12b.

[0172] Referring to FIG. 12a, the isotope cell (2d) may include a plurality of stacked isotope cell sheets (20c).

[0173] The isotope cell sheet (20c) illustrated in FIG. 12a to 12c differs primarily in the structure of the cavity (105) in which the photon generating layer (140) is disposed, in contrast to the isotope cell sheet illustrated in FIG. 6. As illustrated exemplarily in FIG. 12a, the cavity (105) has a stepped recess shape. The cavity (105) may include a trench (103) or a recess formed on the first surface of the substrate (10). Additionally, the cavity (105) may include one or more through holes (101) extending between the bottom of the trench (103) and the second surface of the substrate (10).

[0174] The above-described isotope cell sheet (20c) may include a trench (103) extending along the upper surface of the substrate (10) and a through hole (101) extending from the bottom surface of the trench (103) to the lower surface of the substrate (10). As shown in FIG. 12b, the trench (103) may be extended in a first direction (R1), and the through hole (101) may be extended vertically from the bottom surface of the trench (103). In some embodiments, as shown in FIG. 12b and FIG. 12c, a plurality of through holes (101) may be arranged in the first direction (R1) for a single trench (103).

[0175] A photon generating layer (140) may be provided inside the trench (103) and the plurality of through holes (101). The photon generating layer (140) may include a first portion (141) extending in the longitudinal direction, which is the first direction (R1) of the trench (103), inside the trench (103), and may be disposed within the first trench (103). Additionally, the photon generating layer (140) may include a second portion (142) extending to the lower surface of the substrate (10) within the through hole (101).

[0176] The width direction (i.e., second direction (R2)) dimension of the first part (141) may be larger than the width direction dimension of the second part (142). Here, the width direction is a direction perpendicular to the direction in which the trench (103) extends (i.e., first direction (R1)). The width direction dimension of the first conductive semiconductor layers (110) corresponding to the first part (141) may be larger than the width direction dimension of the first conductive semiconductor layers (110) corresponding to the second part (142).

[0177] The first conductive semiconductor layers (110) of the substrate (10) may have a generally constant thickness from the surface of the photon generating layer (140).

[0178]

[0179] FIG. 13a is a side cross-sectional view showing an isotope cell (2e) according to another embodiment of the present invention. FIG. 13b is a partially enlarged perspective view showing the first conductivity type semiconductor layers (110), photon generation layer (140), and insulating layer (162) of the isotope cell (2e) in enlargement. The isotope cell (2e) shown in FIG. 13a and FIG. 13b differs from the isotope cell (1) shown in FIG. 6 in that the photon generation layer (140) has an annular shape, and this difference will be explained below.

[0180] Referring to FIGS. 13a and 13b, the photon generating layer (140) may have a hollow tube shape. In some embodiments, the hollow central portion of the photon generating layer (140) may be filled with an insulating layer (162). In other embodiments, the central portion may be filled with a substrate (10) or a semiconductor layer derived therefrom. The photon generating layer (140) may extend along the interface with the first conductive semiconductor layers (110) while having a substantially constant thickness. The photon generating layer (140) may have a porous structure including a plurality of pores (140P) (see FIG. 2), as described with reference to FIG. 2. Furthermore, the radiation source (130) may be provided within the pores.

[0181] Since the interior of the above photon generating layer (140) is filled with an insulating layer (162), the amount of radiation source required to form the photon generating layer (140) can be reduced. Because the price of the radiation source is high, the isotope cell (2e) can be manufactured at a low cost by forming a hollow photon generating layer (140) in this way.

[0182]

[0183] FIG. 14 is a side cross-sectional view showing an isotope cell (2f) according to another embodiment of the present invention. The isotope cell (2f) shown in FIG. 14 differs in that it further specifies the external electrodes (105a, 105b) of the isotope cell (2) shown in FIG. 6, and this difference will be explained below.

[0184] Referring to FIG. 14, the isotope battery (2f) includes a first external electrode (105a) and a second external electrode (105b) to supply electrical energy to an external load.

[0185] The first external electrode (105a) includes conductors (15) extending within an insulator (164) to connect the first upper electrodes (132) of the isotope cell sheet (20). The conductors (15) can be electrically connected only to the first upper electrodes (132).

[0186] In some embodiments, the conductors (15) may include a first conductor (15h) and a second conductor (15v) extending in different directions within the insulator (164). The second conductor (15v) may electrically connect the first conductor (15h) and the first upper electrode (132). The first conductor (15h) may be physically and / or electrically connected to the first outer electrode (105a). In some embodiments, the first conductor (15h) may extend in a horizontal direction and the second conductor (15v) may extend in a vertical direction, but the invention is not limited thereto.

[0187] In some embodiments, the second upper electrodes (134) of the isotope cell sheet (20) closest to the first external electrode (105a) may be omitted.

[0188] The second external electrode (105b) can also be electrically connected to the isotope cell sheets (20) in a manner similar to the first external electrode (105a). A person skilled in the art will be able to conceive of the wiring connection between the second external electrode (105b) and the isotope cell sheets (20) by referring to the wiring connection between the first external electrode (105a) and the isotope cell sheets (20) described above.

[0189]

[0190] As described above, although embodiments of the present invention have been described in detail, a person skilled in the art to which the present invention pertains will be able to modify and implement the present invention in various ways without departing from the spirit and scope of the present invention as defined in the appended claims. Therefore, future modifications to the embodiments of the present invention will not depart from the technology of the present invention.

[0191] [Explanation of the symbol]

[0192] 1: Isotope battery

[0193] 105a: First electrode

[0194] 105b: Second electrode

[0195] 110: First conductivity type semiconductor layer

[0196] 120: Second-conduction semiconductor layer

[0197] 130: Radiation source

[0198] 140: Photon generation layer

[0199] 140P: Qi Gong

Claims

1. A photon generating layer having a porous structure; A radiation source provided within the pores of the above-mentioned porous structure; and A first conductivity type semiconductor layer and a second conductivity type semiconductor layer sequentially provided on the above photon generation layer; Isotope cell containing 2. In Paragraph 1, An isotope cell characterized by the above-mentioned pores having a diameter of about 2 nm to about 20 µm when measured by the mercury intrusion method.

3. In Paragraph 1, An isotope cell characterized in that the above-mentioned pores include mesoporous pores.

4. In Paragraph 1, An isotope battery characterized in that the above-mentioned photon generating layer comprises a material capable of generating photons upon the incidence of alpha rays.

5. In Paragraph 1, An isotope battery characterized in that the concentration of the radiation source within the photon generating layer changes monotonically depending on the distance from the first conductive semiconductor layer.

6. In Paragraph 5, An isotope cell characterized in that the concentration of the radiation source within the photon generating layer gradually decreases as the distance from the first conductive semiconductor layer decreases.

7. In Paragraph 1, The above radiation source is an isotope battery characterized by partially filling the above pores.

8. In Paragraph 1, The above-mentioned radiation source is an isotope battery characterized by substantially completely filling the above-mentioned pores.

9. A step of manufacturing a photon generation layer having a porous structure; A step of providing a radiation source within the pores of the above-described pore structure; and A step of forming a first conductivity type semiconductor layer and a second conductivity type semiconductor layer on the above photon generation layer; A method for manufacturing an isotope battery comprising 10. In Paragraph 9, A method for manufacturing an isotope battery characterized in that the step of manufacturing the above photon generating layer includes the step of sintering the powder of the energy conversion material.

11. In Paragraph 9, The step of manufacturing the above photon generation layer is: A step of providing a sacrifice template having a porous structure; A step of at least partially charging an energy conversion material or its precursor within the above-mentioned sacrifice template; and Step of removing the above sacrifice template; A method for manufacturing an isotope battery characterized by including 12. In Paragraph 9, A method for manufacturing an isotope battery characterized by the step of providing a radiation source within the above pore, which includes the step of adsorbing the powder of the radiation source within the above pore.

13. In Paragraph 9, A method for manufacturing an isotope battery characterized in that the step of providing a radiation source within the above pore includes the step of diffusing the radiation source within the above pore.

14. In Paragraph 9, A method for manufacturing an isotope battery, characterized in that the step of forming the first conductivity semiconductor layer and the second conductivity semiconductor layer involves forming the first conductivity semiconductor layer and the second conductivity semiconductor layer such that the first conductivity semiconductor layer and the second conductivity semiconductor layer come into contact with each other.

15. In Paragraph 9, A method for manufacturing an isotope battery characterized in that the above-mentioned pores have a diameter of about 2 nm to about 20 µm when measured by the mercury intrusion method.

16. Stacked plurality of isotope cell sheets; and A first external electrode of a first polarity and a second external electrode of a second polarity electrically connected to the plurality of stacked isotope battery sheets to transfer electrical energy generated in the plurality of stacked isotope battery sheets to an external load; Includes, Each of the above plurality of isotope cell sheets is: semiconductor substrate; and A photon generating layer penetrating the semiconductor substrate and having a pore structure; Includes, The semiconductor substrate comprises a first conductivity type semiconductor layer disposed on the side of the radiation source and a second conductivity type semiconductor layer disposed on the side of the first region, Isotope cell provided with a radiation source within the pores of the above-mentioned porous structure.

17. In Paragraph 16, An isotope cell characterized in that the semiconductor substrate comprises a plurality of through holes, and the photon generating layer is provided inside each of the plurality of through holes.

18. In Paragraph 17, An isotope cell characterized in that the plurality of through holes are arranged on the semiconductor substrate such that the center of each is located at the vertex of a virtual equilateral triangle.

19. In Paragraph 17, An isotope cell characterized in that the semiconductor substrate comprises a plurality of slits, and the photon generating layer is provided inside each of the plurality of slits.

20. In Paragraph 17, An isotope battery characterized in that the plurality of isotope battery sheets are identical dies.

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